SN65HVD147x 3.3-V Full-Duplex RS-485 Transceivers With 16-kV IEC ESD
SN65HVD147x 3.3-V Full-Duplex RS-485 Transceivers With 16-kV IEC ESD
SN65HVD147x 3.3-V Full-Duplex RS-485 Transceivers With 16-kV IEC ESD
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PACKAGE
SN65HVD1471
SN65HVD1474
SN65HVD1477
MSOP (8)
3.00 mm 3.00 mm
SOIC (8)
4.90 mm 3.91 mm
SN65HVD1470
SN65HVD1473
SN65HVD1476
MSOP (10)
3.00 mm 3.00 mm
SOIC (14)
8.65 mm 3.91 mm
Block Diagram
VCC
VCC
A
3 Description
RE
DE
D
R
B
R
B
VCC
Z
D
Y
Z
D
Y
GND
GND
SN65HVD1470,
SN65HVD1473, and
SN65HVD1476
SN65HVD1471,
SN65HVD1474, and
SN65HVD1477
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
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Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Device Comparison Table.....................................
Pin Configuration and Functions .........................
Specifications.........................................................
7.1
7.2
7.3
7.4
7.5
7.6
7.7
7.8
7.9
7.10
7.11
1
1
1
2
3
3
6
Overview .................................................................
Functional Block Diagram .......................................
Feature Description.................................................
Device Functional Modes........................................
17
17
17
17
Device Support......................................................
Related Links ........................................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
28
28
28
28
28
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision C (August 2014) to Revision D
Page
Page
Page
Page
Changed device status from Product Preview to Production Data (mixed status) ................................................................ 1
(1)
SIGNALING RATE
DUPLEX
ENABLES
PACKAGE
NODES
256
SN65HVD1470
up to 400 kbps
Full
DE, RE
SOIC-14
MSOP-10
SN65HVD1471
up to 400 kbps
Full
None
SOIC-8
MSOP-8
256
SN65HVD1473
up to 20 Mbps
Full
DE, RE
SOIC-14
MSOP-10
256
SN65HVD1474
up to 20 Mbps
Full
None
SOIC-8
MSOP-8
256
SN65HVD1476
up to 50 Mbps
Full
DE, RE
SOIC-14
MSOP-10
96
SN65HVD1477
up to 50 Mbps
Full
None
SOIC-8
MSOP-8
96
For device status, see the Mechanical, Packaging, and Orderable Information section.
VCC
R
D
GND
A
B
Z
Y
8
2
R
A
7
B
5
3
D
Y
6
Z
NO.
TYPE
DESCRIPTION
VCC
Supply
Digital output
Digital input
GND
Reference potential
Bus output
Bus output
Bus input
Bus input
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10
VCC
RE
DE
GND
3
6
4
7
2
9
1
8
NO.
TYPE
DESCRIPTION
Digital output
RE
Digital input
DE
Digital input
Digital input
GND
Reference potential
Bus output
Bus output
Bus input
Bus input
VCC
10
Supply
NC
R
RE
DE
D
GND
GND
14
13
12
11
10
VCC
VCC
A
B
Z
Y
NC
NC = no internal connection
NO.
1
NC
TYPE
DESCRIPTION
No connect
Not connected
Digital output
RE
Digital input
DE
Digital input
Digital input
GND
(1)
7 (1)
Reference potential
Bus output
10
Bus output
11
Bus input
12
Bus input
VCC
(1)
(2)
13 (2)
14 (2)
Supply
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7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
MIN
MAX
UNIT
0.5
5.5
13
16.5
0.3
5.7
Voltage input range, transient pulse, any bus pin (A, B, Y, or Z) through 100
100
100
Receiver output
24
24
mA
170
Supply voltage
VCC
Voltage
Input voltage
Output current
Junction temperature, TJ
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
V(ESD)
(1)
(2)
(3)
Electrostatic discharge
MIN
MAX UNIT
65
150
16
16
kV
IEC 61000-4-2 ESD (Air-Gap Discharge), bus pins and GND (1) (2)
16
16
kV
IEC 61000-4-4 EFT (Fast transient or burst), bus pins and GND
kV
IEC 60749-26 ESD (Human Body Model), bus pins and GND
(2)
30
30
kV
40
40
kV
Human body model (HBM), per JEDEC specification JESD22-A114, all pins
kV
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins
1.5
1.5
kV
300
300
kV
By inference from contact-discharge results, see the Application and Implementation section
Limited by tester capability.
Modeled performance only; based on measured IEC ESD (Contact) capability.
MIN
Supply voltage
NOM MAX
3
(1)
3.3
UNIT
3.6
VI
12
VIH
High-level input voltage (Driver, driver enable, and receiver enable inputs)
VCC
VIL
Low-level input voltage (Driver, driver enable, and receiver enable inputs)
0.8
VID
12
12
IO
60
60
mA
IO
mA
RL
54
CL
1/tUI
Signaling rate
60
50
pF
HVD1470, HVD1471
400
HVD1473, HVD1474
20
HVD1476, HVD1477
50
kbps
Mbps
TA (2)
Operating free-air temperature (See the Application and Implementation for thermal
information)
40
125
TJ
Junction Temperature
40
150
(1)
(2)
The algebraic convention, in which the least positive (most negative) limit is designated as minimum is used in this data sheet.
Operation is specified for internal (junction) temperatures up to 150C. Self-heating because of internal power dissipation should be
considered for each application. Maximum junction temperature is internally limited by the thermal shut-down (TSD) circuit which
disables the driver outputs when the junction temperature reaches 170C.
D
(8 PINS)
D
(14 PINS)
UNIT
C/W
RJA
110.7
83.3
RJC(top)
54.7
42.9
RJB
51.3
37.8
JT
9.2
9.3
JB
50.7
37.5
TJ(TSD)
170
DGS
(10 PINS)
DGK
(8 PINS)
UNIT
C/W
RJA
165.5
168.7
RJC(top)
37.7
62.2
RJB
86.4
89.5
JT
1.4
7.4
JB
84.8
87.9
TJ(TSD)
170
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TEST CONDITIONS
Unterminated
Power Dissipation
driver and receiver enabled,
VCC = 3.6 V, TJ = 150C
50% duty cycle square-wave signal at
signaling rate:
PD
RS-422 load
RS-485 load
RL = 300 ,
CL = 50 pF (driver)
RL = 100 ,
CL = 50 pF (driver)
RL = 54 ,
CL = 50 pF (driver)
VALUE
HVD1470,
HVD1471
150
HVD1473,
HVD1474
180
HVD1476,
HVD1477
220
HVD1470,
HVD1471
190
HVD1473,
HVD1474
220
HVD1476,
HVD1477
250
HVD1470,
HVD1471
230
HVD1473,
HVD1474
255
HVD1476,
HVD1477
285
UNIT
mW
mW
mW
|VOD|
TEST CONDITIONS
MIN
TYP
RL = 60 , 375 on each
output to 7 V to 12 V, See Figure 15
1.5
1.5
VOC(SS)
VOC
VOC(PP)
COD
VIT+
VIT
Vhys
VOH
IOH = 8 mA
VOL
IOL = 8 mA
II
IOZ
IOS
II
50
50
VCC / 2
50
50
mV
(1)
-70
200
-140
40
70
2.4
VCC0.3
See
0.2
VO = 0 V or VCC, RE = VCC
(1)
mV
See
mV
V
150
mA
75
100
VI = 12 V
VI = 7 V
mV
VI = 12 V
VI = 7 V
pF
20
0.4
150
HVD1470,
HVD1473
mV
mV
15
HVD1470, HVD1473,
HVD1476
UNIT
500
HVD1476
(1)
MAX
40
240
267
125
333
180
Under any specific conditions, VIT+ is assured to be at least Vhys higher than VIT.
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ICC
TEST CONDITIONS
TYP
MAX
UNIT
DE = VCC,
RE = GND, No load
MIN
750
1100
Driver enabled,
receiver disabled
DE = VCC, RE = VCC,
No load
350
650
Driver disabled,
receiver enabled
DE = GND,
RE = GND, No load
650
800
DE = GND, D = open,
RE = VCC, No load
0.1
170
TEST CONDITIONS
MIN
TYP MAX
UNIT
100
400
750
ns
350
550
ns
40
ns
50
200
ns
300
750
ns
13
25
ns
70
110
ns
ns
45
60
ns
20
115
ns
DRIVER
tr, tf
tPHL, tPLH
tSK(P)
tPHZ, tPLZ
tPZH, tPZL
RL = 54 , CL = 50 pF
HVD1470
Receiver enabled
See Figure 17
See Figure 18
and Figure 19
Receiver disabled
RECEIVER
tr, tf
tPHL, tPLH
tSK(P)
tPLZ, tPHZ
tPZL(1),
tPZH(1)
tPZL(2),
tPZH(2)
CL = 15 pF
HVD1470
Driver enabled
Driver disabled
See Figure 20
See Figure 21
See Figure 22
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TEST CONDITIONS
MIN
TYP MAX
UNIT
DRIVER
tr, tf
tPHL, tPLH
tSK(P)
tPHZ, tPLZ
tPZH, tPZL
RL = 54 , CL = 50 pF
HVD1473
Receiver enabled
See Figure 17
14
ns
10
20
ns
ns
12
25
ns
10
20
ns
10
ns
60
90
ns
Receiver disabled
RECEIVER
tr, tf
tPHL, tPLH
tSK(P)
tPLZ, tPHZ
tpZL(1), tPZH(1)
tPZL(2), tPZH(2)
CL = 15 pF
HVD1473
See Figure 20
ns
17
25
ns
Driver enabled
See Figure 21
12
90
ns
Driver disabled
See Figure 22
TEST CONDITIONS
MIN
TYP MAX
UNIT
DRIVER
tr, tf
tPHL, tPLH
tSK(P)
tPHZ, tPLZ
tPZH, tPZL
RL = 54 , CL = 50 pF
HVD1476
Receiver enabled
See Figure 17
ns
10
16
ns
3.5
ns
10
20
ns
10
20
ns
Receiver disabled
RECEIVER
tr, tf
tPHL, tPLH
tSK(P)
tPLZ, tPHZ
tpZL(1), tPZH(1)
tPZL(2), tPZH(2)
10
1
CL = 15 pF
HVD1476
See Figure 20
ns
25
40
ns
ns
ns
15
Driver enabled
See Figure 21
90
ns
Driver disabled
See Figure 22
3.6
VOH
VOL
3.3
2.7
2.4
2.1
1.8
1.5
1.2
0.9
0.6
0.3
0
10
20
30
40
50
60
70
Driver Output Current (mA)
80
90
2
1.5
1
0.5
100
10
20
30
40
50
60
70
Driver Output Current (mA)
D001
80
90
100
D002
2.2
45
2.15
2.5
2.1
2.05
2
1.95
40
35
30
25
20
15
10
5
1.9
-7
0
-5
-3
-1
1
3
5
7
Driver Common-Mode Voltage (V)
11
0.5
D003
360
355
355
350
345
340
335
330
325
320
1.5
2
2.5
Supply Voltage (V)
3.5
D004
350
345
340
335
330
325
320
315
-40
-20
20
40
60
Temperature (qC)
80
100
120
D009
315
-40
-20
20
40
60
Temperature (qC)
80
100
120
D010
11
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14
9
8
7
6
5
4
3
2
1
0
-40
-20
20
40
60
Temperature (qC)
80
100
12
10
8
6
4
2
0
-40
120
-20
20
40
60
Temperature (qC)
D005
80
100
120
D006
12
Series1
Driver Propagation Delay (ns)
3.5
3
2.5
2
1.5
1
0.5
0
-40
-20
20
40
60
Temperature (qC)
80
100
10
8
6
4
2
0
-40
120
-20
20
40
60
Temperature (qC)
D011
80
100
120
D012
42
70
Supply Current (mA)
41.8
41.6
41.4
60
50
40
30
20
41.2
10
0
41
0
0.05
0.1
0.15
0.2
0.25
Signaling Rate (Mbps)
0.3
0.35
0.4
D013
VCC = 3.3 V
Figure 11. SN65HVD1470, SN65HVD1471 Supply Current vs
Signal Rate
12
8
10
12
14
Signaling Rate (Mbps)
16
18
20
D007
TA = 25C
80
70
3.5
60
50
40
30
20
10
2.5
2
1.5
1
VCM = 12 V
VCM = 0 V
VCM = -7 V
0.5
0
0
10
15
20
25
30
35
Signaling Rate (Mbps)
40
45
0
-150
50
-130
D014
VCC = 3.3 V
Figure 13. SN65HVD1476, SN65HVD1477 Supply Current vs
Signal Rate
-110
-90
-70
Differential Input Voltage (mV)
-50
D008
TA = 25C
VCC
DE
0 V or 3 V
Y
VOD
60 W 1%
+
_
375 W 1%
S0301-01
Figure 15. Measurement of Driver Differential Output Voltage With Common-Mode Load
0 V or 3 V
V(Y)
V(Z)
RL / 2
Y
D
VOD
Z
VOC(PP)
RL / 2
CL
DVOC(SS)
VOC
VOC
S0302-01
Figure 16. Measurement of Driver Differential and Common-Mode Output With RS-485 Load
13
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50%
Y
Figure 17. Measurement of Driver Differential Output Rise and Fall Times and Propagation Delays
Y
3V
50 W
VI
VO
VI
Z
CL = 50 pF 20%
DE
Input
Generator
3V
S1
50%
50%
0V
RL = 110 W
1%
CL Includes Fixture
and Instrumentation
Capacitance
tPZH
VOH
90%
VO
50%
0V
tPHZ
S0304-01
Figure 18. Measurement of Driver Enable and Disable Times with Active-High Output and Pulldown Load
3V
Y
D
3V
S1
VO
3V
VI
50%
50%
0V
DE
Input
Generator
RL = 110 W
1%
tPZL
tPLZ
CL = 50 pF 20%
VI
50 W
3V
CL Includes Fixture
and Instrumentation
Capacitance
VO
50%
10%
VOL
S0305-01
Figure 19. Measurement of Driver Enable and Disable Times with Active-Low Output and Pullup Load
3V
A
Input
Generator
R
VI
50 W
1.5 V
0V
VI
VO
50%
50%
0V
B
RE
tPLH
CL = 15 pF 20%
VO
CL Includes Fixture
and Instrumentation
Capacitance
tPHL
90% 90%
50%
10%
50%
10%
tr
VOH
VOL
tf
S0306-01
Figure 20. Measurement of Receiver Output Rise and Fall Times and Propagation Delays
14
VCC
DE
0 V or 3 V D
B
RE
Input
Generator
VI
1 kW 1%
R VO
S1
CL = 15 pF 20%
CL Includes Fixture
and Instrumentation
Capacitance
50 W
3V
VI
50%
50%
0V
tPZH(1)
tPHZ
VOH
90%
VO
50%
D at 3 V
S1 to GND
0V
tPZL(1)
tPLZ
VCC
VO
50%
D at 0 V
S1 to VCC
10%
VOL
S0307-01
Figure 21. Measurement of Receiver Enable and Disable Times With Driver Enabled
15
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0 V or 1.5 V
R VO
S1
1.5 V or 0 V
RE
Input
Generator
VI
1 kW 1%
CL = 15 pF 20%
CL Includes Fixture
and Instrumentation
Capacitance
50 W
3V
VI
50%
0V
tPZH(2)
VOH
VO
A at 1.5 V
B at 0 V
S1 to GND
50%
GND
tPZL(2)
VCC
VO
50%
VOL
A at 0 V
B at 1.5 V
S1 to VCC
S0308-01
16
9 Detailed Description
9.1 Overview
The SN65HVD1470, SN65HVD1471, SN65HVD1473, SN65HVD1474, SN65HVD1476, and SN65HVD1477
devices are low-power, full-duplex RS-485 transceivers available in three speed grades suitable for data
transmission up to 400 kbps, 20 Mbps, and 50 Mbps.
The SN65HVD1471, SN65HVD1474, and SN65HVD1477 are fully enabled with no external enabling pins. The
SN65HVD1470, SN65HVD1473, and SN65HVD1476 have active-high driver enables and active-low receiver
enables. A standby current of less than 5 A can be achieved by disabling both driver and receiver.
VCC
A
R
B
R
B
RE
VCC
DE
D
D
Y
Z
D
Y
GND
GND
ENABLE
DE
Driver disabled
OPEN
OPEN
OUTPUTS
FUNCTION
17
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When the receiver enable pin, RE, is logic low, the receiver is enabled. When the differential input voltage
defined as VID = V(A) V(B) is positive and higher than the positive input threshold, VIT+, the receiver output, R,
turns high. When VID is negative and less than the negative and lower than the negative input threshold, VIT, the
receiver output, R, turns low. If VID is between VIT+ and VIT the output is indeterminate.
When RE is logic high or left open, the receiver output is high-impedance and the magnitude and polarity of VID
are irrelevant. Internal biasing of the receiver inputs causes the output to go failsafe-high when the transceiver is
disconnected from the bus (open-circuit), the bus lines are shorted (short-circuit), or the bus is not actively driven
(idle bus).
Table 2. Receiver Function Table SN65HVD1470, SN65HVD1473, SN65HVD1476
DIFFERENTIAL INPUT
ENABLE
OUTPUT
FUNCTION
RE
Receiver disabled
OPEN
Open-circuit bus
Short-circuit bus
For the SN65HVD1471, HVD1474, and HVD1477, the driver and receiver are fully enabled, thus the differential
outputs Y and Z follow the logic states at data input D at all times. A logic high at D causes Y to turn high and Z
to turn low. In this case the differential output voltage defined as VOD = V(Y) V(Z) is positive. When D is low, the
output states reverse, Z turns high, Y becomes low, and VOD is negative. The D pin has an internal pullup
resistor to VCC, thus, when left open while the driver is enabled, output Y turns high and Z turns low.
Table 3. Driver Function Table SN65HVD1471, SN65HVD1474, SN65HVD1477
INPUT
OUTPUTS
FUNCTION
OPEN
When the differential input voltage defined as VID = V(A) V(B) is positive and higher than the positive input
threshold, VIT+, the receiver output, R, turns high. When VID is negative and less than the negative input
threshold, VIT, the receiver output, R, turns low. If VID is between VIT+ and VIT the output is indeterminate.
Internal biasing of the receiver inputs causes the output to go failsafe-high when the transceiver is disconnected
from the bus (open-circuit), the bus lines are shorted (short-circuit), or the bus is not actively driven (idle bus).
Table 4. Receiver Function Table SN65HVD1471, SN65HVD1474, SN65HVD1477
18
DIFFERENTIAL INPUT
OUTPUT
Open-circuit bus
Short-circuit bus
FUNCTION
VCC
1 M
1.5 k
1.5 k
D, RE
DE
9V
9V
1 M
VCC
VCC
R2
R2
R1
A
R
R1
B
9V
16 V
R3
R3
Y
Z
16 V
19
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A
R(T)
R(T)
DE
RE
Master
Slave
RE
DE
Z
R(T)
R(T)
A
R Slave
D
R RE DE D
VCC
R
VCC
A
R
RE
VCC
R
B
DE
RE
DE
Z
D
GND
GND
10
100
1k
10k
100k
1M
10M
100M
where
(1)
Per Equation 1, Table 5 lists the maximum cable-stub lengths for the minimum-driver output rise-times of the
SN65HVD147x full-duplex family of transceivers for a signal velocity of 78%.
Table 5. Maximum Stub Length
DEVICE
(ft)
SN65HVD1470
100
2.34
7.7
SN65HVD1471
100
2.34
7.7
SN65HVD1473
0.1
0.3
SN65HVD1474
0.1
0.3
SN65HVD1476
0.05
0.15
SN65HVD1477
0.05
0.15
21
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Vhysmin
40 mV
60
20
20
60
VID (mV)
22
R(C)
R(D)
High-Voltage
Pulse
Generator
330
(1.5 k)
Device
Under
Test
150 pF
(100 pF)
C(S)
Current (A)
50 M
(1 M)
40
35
30 10-kV IEC
25
20
15
10
5
0
0
50
100
10-kV HBM
150
200
250
300
Time (ns)
Figure 34. HBM and IEC ESD Models and Currents in Comparison (HBM Values in Parenthesis)
The on-chip implementation of IEC ESD protection significantly increases the robustness of equipment. Common
discharge events occur because of human contact with connectors and cables. Designers may choose to
implement protection against longer duration transients, typically referred to as surge transients.
EFTs are generally caused by relay-contact bounce or the interruption of inductive loads. Surge transients often
result from lightning strikes (direct strike or an indirect strike which induce voltages and currents), or the
switching of power systems, including load changes and short circuit switching. These transients are often
encountered in industrial environments, such as factory automation and power-grid systems.
Figure 35 compares the pulse-power of the EFT and surge transients with the power caused by an IEC ESD
transient. The left hand diagram shows the relative pulse-power for a 0.5kV surge transient and 4-kV EFT
transient, both of which dwarf the 10-kV ESD transient visible in the lower-left corner. 500-V surge transients are
representative of events that may occur in factory environments in industrial and process automations.
22
20
18
16
14
12
10
8
6
4
2
0
The right hand diagram shows the pulse-power of a 6-kV surge transient, relative to the same 0.5-kV surge
transient. 6-kV surge transients are most likely to occur in power generation and power-grid systems.
0.5-kV Surge
4-kV EFT
10-kV ESD
0
10
15
20
25
Time (s)
30
35
40
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
6-kV Surge
0.5-kV Surge
0
10
15
20
25
30
35
40
Time (s)
23
www.ti.com
1000
100
Surge
10
0.01
EFT
10-3
10-4
ESD
10-5
10-6
0.5
8 10
15
10 k
TVS
RxD
B
RE
DIR
MCU/
UART
R2
R1
SN65HVD147x
DE
DIR
TVS
D
TxD
Y
10 k
GND
R2
Figure 37. Transient Protection Against ESD, EFT, and Surge transients
24
FUNCTION
ORDER NUMBER
MANUFACTURER
XCVR
SN65HVD147xD
TI
R1
CRCW0603010RJNEAHP
Vishay
Bidirectional 400-W
transient suppressor
CDSOT23-SM712
Bourns
R2
TVS
VOD
VOD
RL = 60
RL = 60
VOD
RL = 60
Figure 40. SN65HVD1476 and SN65HVD1477, 50 Mbps
25
www.ti.com
12 Layout
12.1 Layout Guidelines
On-chip IEC-ESD protection is good for laboratory and portable equipment but never sufficient for EFT and surge
transients occurring in industrial environments. Therefore robust and reliable bus node design requires the use of
external transient protection devices.
Because ESD and EFT transients have a wide frequency bandwidth from approximately 3-MHz to 3-GHz, highfrequency layout techniques must be applied during PCB design.
For successful PCB design, begin with the design of the protection circuit (see Figure 41).
1. Place the protection circuitry close to the bus connector to prevent noise transients from penetrating your
board.
2. Use VCC and ground planes to provide low-inductance. Note that high-frequency currents follow the path of
least inductance and not the path of least impedance.
3. Design the protection components into the direction of the signal path. Do not force the transient currents to
divert from the signal path to reach the protection device.
4. Apply 100-nF to 220-nF bypass capacitors as close as possible to the VCC-pins of transceiver, UART,
controller ICs on the board (see Figure 41).
5. Use at least two vias for VCC and ground connections of bypass capacitors and protection devices to
minimize effective via-inductance (see Figure 41).
6. Use 1-k to 10-k pullup and pulldown resistors for enable lines to limit noise currents in theses lines during
transient events (see Figure 41).
7. Insert pulse-proof resistors into the A and B bus lines if the TVS clamping voltage is higher than the specified
maximum voltage of the transceiver bus pins. These resistors limit the residual clamping current into the
transceiver and prevent it from latching up (see Figure 41).
8. While pure TVS protection is sufficient for surge transients up to 1 kV, higher transients require metal-oxide
varistors (MOVs) which reduce the transients to a few hundred volts of clamping voltage, and transient
blocking units (TBUs) that limit transient current to less than 1 mA.
26
VCC or GND
MCU
SN65HVD147x
R
TVS
5
R
7
R
R
VCC or GND
1
R
GND
TVS
JMP
JMP
GND
GND
GND
27
www.ti.com
PRODUCT FOLDER
TECHNICAL
DOCUMENTS
TOOLS &
SOFTWARE
SUPPORT &
COMMUNITY
SN65HVD1470
Click here
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SN65HVD1476
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SN65HVD1477
Click here
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13.3 Trademarks
All trademarks are the property of their respective owners.
13.5 Glossary
SLYZ022 TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
28
www.ti.com
14-Oct-2014
PACKAGING INFORMATION
Orderable Device
Status
(1)
Eco Plan
Lead/Ball Finish
(2)
(6)
(3)
Op Temp (C)
Device Marking
(4/5)
SN65HVD1470D
ACTIVE
SOIC
14
50
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
HVD1470
SN65HVD1470DGS
ACTIVE
VSSOP
DGS
10
80
Green (RoHS
& no Sb/Br)
CU NIPDAUAG
Level-1-260C-UNLIM
-40 to 125
1470
SN65HVD1470DGSR
ACTIVE
VSSOP
DGS
10
2500
Green (RoHS
& no Sb/Br)
CU NIPDAUAG
Level-1-260C-UNLIM
-40 to 125
1470
SN65HVD1470DR
ACTIVE
SOIC
14
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
HVD1470
SN65HVD1471D
ACTIVE
SOIC
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
VD1471
SN65HVD1471DGK
ACTIVE
VSSOP
DGK
80
Green (RoHS
& no Sb/Br)
CU NIPDAUAG
Level-1-260C-UNLIM
-40 to 125
1471
SN65HVD1471DGKR
ACTIVE
VSSOP
DGK
2500
Green (RoHS
& no Sb/Br)
CU NIPDAUAG
Level-1-260C-UNLIM
-40 to 125
1471
SN65HVD1471DR
ACTIVE
SOIC
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
VD1471
SN65HVD1473D
ACTIVE
SOIC
14
50
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
HVD1473
SN65HVD1473DGS
ACTIVE
VSSOP
DGS
10
80
Green (RoHS
& no Sb/Br)
CU NIPDAUAG
Level-1-260C-UNLIM
-40 to 125
1473
SN65HVD1473DGSR
ACTIVE
VSSOP
DGS
10
2500
Green (RoHS
& no Sb/Br)
CU NIPDAUAG
Level-1-260C-UNLIM
-40 to 125
1473
SN65HVD1473DR
ACTIVE
SOIC
14
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
HVD1473
SN65HVD1474D
ACTIVE
SOIC
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
VD1474
SN65HVD1474DGK
ACTIVE
VSSOP
DGK
80
Green (RoHS
& no Sb/Br)
CU NIPDAUAG
Level-1-260C-UNLIM
-40 to 125
1474
SN65HVD1474DGKR
ACTIVE
VSSOP
DGK
2500
Green (RoHS
& no Sb/Br)
CU NIPDAUAG
Level-1-260C-UNLIM
-40 to 125
1474
SN65HVD1474DR
ACTIVE
SOIC
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
VD1474
SN65HVD1476D
ACTIVE
SOIC
14
50
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
HVD1476
Addendum-Page 1
Samples
www.ti.com
Orderable Device
14-Oct-2014
Status
(1)
Eco Plan
Lead/Ball Finish
(2)
(6)
(3)
Op Temp (C)
Device Marking
(4/5)
SN65HVD1476DGS
ACTIVE
VSSOP
DGS
10
80
Green (RoHS
& no Sb/Br)
CU NIPDAUAG
Level-1-260C-UNLIM
-40 to 125
1476
SN65HVD1476DGSR
ACTIVE
VSSOP
DGS
10
2500
Green (RoHS
& no Sb/Br)
CU NIPDAUAG
Level-1-260C-UNLIM
-40 to 125
1476
SN65HVD1476DR
ACTIVE
SOIC
14
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
HVD1476
SN65HVD1477D
ACTIVE
SOIC
80
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
VD1477
SN65HVD1477DGK
ACTIVE
VSSOP
DGK
80
Green (RoHS
& no Sb/Br)
CU NIPDAUAG
Level-1-260C-UNLIM
-40 to 125
1477
SN65HVD1477DGKR
ACTIVE
VSSOP
DGK
2500
Green (RoHS
& no Sb/Br)
CU NIPDAUAG
Level-1-260C-UNLIM
-40 to 125
1477
SN65HVD1477DR
ACTIVE
SOIC
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
VD1477
(1)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
Addendum-Page 2
Samples
www.ti.com
14-Oct-2014
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 3
13-Nov-2014
Device
SN65HVD1470DGSR
VSSOP
DGS
SN65HVD1471DGKR
VSSOP
SN65HVD1473DGSR
VSSOP
SN65HVD1474DGKR
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
10
2500
330.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
DGK
2500
330.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
DGS
10
2500
330.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
VSSOP
DGK
2500
330.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
SN65HVD1474DR
SOIC
2500
330.0
12.4
6.4
5.2
2.1
8.0
12.0
Q1
SN65HVD1476DGSR
VSSOP
DGS
10
2500
330.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
SN65HVD1477DGKR
VSSOP
DGK
2500
330.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
Pack Materials-Page 1
13-Nov-2014
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
SN65HVD1470DGSR
VSSOP
DGS
10
2500
364.0
364.0
27.0
SN65HVD1471DGKR
VSSOP
DGK
2500
364.0
364.0
27.0
SN65HVD1473DGSR
VSSOP
DGS
10
2500
364.0
364.0
27.0
SN65HVD1474DGKR
VSSOP
DGK
2500
364.0
364.0
27.0
SN65HVD1474DR
SOIC
2500
340.5
338.1
20.6
SN65HVD1476DGSR
VSSOP
DGS
10
2500
364.0
364.0
27.0
SN65HVD1477DGKR
VSSOP
DGK
2500
364.0
364.0
27.0
Pack Materials-Page 2
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