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SN65HVD147x 3.3-V Full-Duplex RS-485 Transceivers With 16-kV IEC ESD

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SN65HVD1470, SN65HVD1471, SN65HVD1473


SN65HVD1474, SN65HVD1476, SN65HVD1477
SLLSEJ8D JUNE 2014 REVISED OCTOBER 2014

SN65HVD147x 3.3-V Full-Duplex RS-485 Transceivers With 16-kV IEC ESD


1 Features

1/8 Unit-Load Options Available


Up to 256 Nodes on the Bus
Bus I/O Protection
> 30 kV HBM protection
> 16 kV IEC61000-4-2 Contact Discharge
> 4 kV IEC61000-4-4 Fast Transient Burst
Extended Industrial Temperature Range:
40C to 125C
Large Receiver Hysteresis (70 mV) for Noise
Rejection
Low Power Consumption
< 1.1 mA Quiescent Current During Operation
Low Standby Supply Current: 10 nA Typical,
< 5 A (maximum)
Glitch-Free Power-Up and Power-Down Protection
for Hot-Plugging Applications
5-V Tolerant Logic Inputs Compatible With 3.3-V
or 5-V Controllers
Signaling Rate Options Optimized for:
400 kbps (1470, 1471), 20 Mbps (1473, 1474), 50
Mbps (1476, 1477)

2 Applications

Industrial Automation
Encoders and Decoders
Building Automation
Security and Surveillance Networks
Telecommunications

These devices each combine a differential driver and


a differential receiver, which operate from a single
3.3-V power supply. Each driver and receiver has
separate input and output pins for full-duplex bus
communication designs. These devices all feature a
wide common-mode voltage range which makes the
devices suitable for multi-point applications over long
cable runs.
The
SN65HVD1471,
SN65HVD1474,
and
SN65HVD1477 devices are fully enabled with no
external enabling pins.
The
SN65HVD1470,
SN65HVD1473,
and
SN65HVD1476 devices have active-high driver
enables and active-low receiver enables. A low, less
than 5-A standby current can be achieved by
disabling both the driver and receiver.
These devices are characterized from 40C to
125C.
Device Information(1)
PART NUMBER

PACKAGE

BODY SIZE (NOM)

SN65HVD1471
SN65HVD1474
SN65HVD1477

MSOP (8)

3.00 mm 3.00 mm

SOIC (8)

4.90 mm 3.91 mm

SN65HVD1470
SN65HVD1473
SN65HVD1476

MSOP (10)

3.00 mm 3.00 mm

SOIC (14)

8.65 mm 3.91 mm

(1) For all available packages, see the orderable addendum at


the end of the datasheet.

Block Diagram
VCC

VCC
A

3 Description

RE

The SN65HVD147x family of full-duplex transceivers


feature the highest ESD protection in the RS-485
portfolio, supporting 16-kV IEC61000-4-2 contact
discharge and > 30-kV HBM ESD protection. These
RS-485 transceivers have robust 3.3-V drivers and
receivers and are offered in a standard SOIC
package as well as in a small-footprint MSOP
package. The large receiver hysteresis of the
SN65HVD147x devices provides immunity to
conducted differential noise and the wide operating
temperature enables reliability in harsh operating
environments.

DE
D

R
B

R
B
VCC

Z
D
Y

Z
D
Y

GND

GND

SN65HVD1470,
SN65HVD1473, and
SN65HVD1476

SN65HVD1471,
SN65HVD1474, and
SN65HVD1477

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.

SN65HVD1470, SN65HVD1471, SN65HVD1473


SN65HVD1474, SN65HVD1476, SN65HVD1477
SLLSEJ8D JUNE 2014 REVISED OCTOBER 2014

www.ti.com

Table of Contents
1
2
3
4
5
6
7

Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Device Comparison Table.....................................
Pin Configuration and Functions .........................
Specifications.........................................................
7.1
7.2
7.3
7.4
7.5
7.6
7.7
7.8
7.9
7.10
7.11

1
1
1
2
3
3
6

Absolute Maximum Ratings ...................................... 6


Handling Ratings....................................................... 6
Recommended Operating Conditions....................... 7
Thermal Information D Packages......................... 7
Thermal Information DGS and DGK Packages.... 7
Power Dissipation ..................................................... 8
Electrical Characteristics........................................... 8
Switching Characteristics 400 kbps...................... 9
Switching Characteristics 20 Mbps .................... 10
Switching Characteristics 50 Mbps .................. 10
Typical Characteristics .......................................... 11

Parameter Measurement Information ................ 13

Detailed Description ............................................ 17


9.1
9.2
9.3
9.4

Overview .................................................................
Functional Block Diagram .......................................
Feature Description.................................................
Device Functional Modes........................................

17
17
17
17

10 Application and Implementation........................ 20


10.1 Application Information.......................................... 20
10.2 Typical Application ................................................ 20

11 Power Supply Recommendations ..................... 26


12 Layout................................................................... 26
12.1 Layout Guidelines ................................................. 26
12.2 Layout Example .................................................... 27

13 Device and Documentation Support ................. 28


13.1
13.2
13.3
13.4
13.5

Device Support......................................................
Related Links ........................................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................

28
28
28
28
28

14 Mechanical, Packaging, and Orderable


Information ........................................................... 28

4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision C (August 2014) to Revision D

Page

Updated the MSOP10 logic diagram ................................................................................................................................... 4

Changes from Revision B (July 2014) to Revision C

Page

Updated the Device Comparison Table.................................................................................................................................. 3

Changes from Revision A (June 2014) to Revision B

Page

Updated SN65HVD1470 and SN65HVD1471 specifications to production values ............................................................... 3

Changes from Original (May 2014) to Revision A

Page

Changed device status from Product Preview to Production Data (mixed status) ................................................................ 1

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Product Folder Links: SN65HVD1470 SN65HVD1471 SN65HVD1473 SN65HVD1474 SN65HVD1476 SN65HVD1477

SN65HVD1470, SN65HVD1471, SN65HVD1473


SN65HVD1474, SN65HVD1476, SN65HVD1477
www.ti.com

SLLSEJ8D JUNE 2014 REVISED OCTOBER 2014

5 Device Comparison Table


PART NUMBER (1)

(1)

SIGNALING RATE

DUPLEX

ENABLES

PACKAGE

NODES
256

SN65HVD1470

up to 400 kbps

Full

DE, RE

SOIC-14
MSOP-10

SN65HVD1471

up to 400 kbps

Full

None

SOIC-8
MSOP-8

256

SN65HVD1473

up to 20 Mbps

Full

DE, RE

SOIC-14
MSOP-10

256

SN65HVD1474

up to 20 Mbps

Full

None

SOIC-8
MSOP-8

256

SN65HVD1476

up to 50 Mbps

Full

DE, RE

SOIC-14
MSOP-10

96

SN65HVD1477

up to 50 Mbps

Full

None

SOIC-8
MSOP-8

96

For device status, see the Mechanical, Packaging, and Orderable Information section.

6 Pin Configuration and Functions


SN65HVD1471, SN65HVD1474, SN65HVD1477
8-Pin SOIC, D Package, and 8-Pin MSOP, DGK Package
(Top View)

VCC
R
D
GND

A
B
Z
Y
8

2
R

A
7
B
5

3
D

Y
6
Z

Pin Functions SOIC-8 and MSOP-8


PIN
NAME

NO.

TYPE

DESCRIPTION

VCC

Supply

3-V to 3.6-V supply

Digital output

Receive data output

Digital input

GND

Reference potential

Bus output

Digital bus output, Y (Complementary to Z)

Bus output

Digital bus output, Z (Complementary to Y)

Bus input

Digital bus input, B (Complementary to A)

Bus input

Digital bus input, A (Complementary to B)

Copyright 2014, Texas Instruments Incorporated

Driver data input


Local device ground

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SN65HVD1474, SN65HVD1476, SN65HVD1477
SLLSEJ8D JUNE 2014 REVISED OCTOBER 2014

www.ti.com

SN65HVD1470, SN65HVD1473, SN65HVD1476


10-Pin MSOP, DGS Package
(Top View)
R

10

VCC

RE

DE

GND

3
6
4
7
2
9
1
8

Pin Functions MSOP10


PIN
NAME

NO.

TYPE

DESCRIPTION

Digital output

Receive data output

RE

Digital input

Receive enable Low

DE

Digital input

Driver enable High

Digital input

Driver data input

GND

Reference potential

Bus output

Digital bus output, Y (Complementary to Z)

Bus output

Digital bus output, Z (Complementary to Y)

Bus input

Digital bus input, B (Complementary to A)

Bus input

Digital bus input, A (Complementary to B)

VCC

10

Supply

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Local device ground

3-V to 3.6-V supply

Copyright 2014, Texas Instruments Incorporated

Product Folder Links: SN65HVD1470 SN65HVD1471 SN65HVD1473 SN65HVD1474 SN65HVD1476 SN65HVD1477

SN65HVD1470, SN65HVD1471, SN65HVD1473


SN65HVD1474, SN65HVD1476, SN65HVD1477
www.ti.com

SLLSEJ8D JUNE 2014 REVISED OCTOBER 2014

SN65HVD1470, SN65HVD1473, SN65HVD1476


14-Pin SOIC, D Package
(Top View)

NC
R
RE
DE
D
GND
GND

14

13

12

11

10

VCC
VCC
A
B
Z
Y
NC

NC = no internal connection

Pin Functions SOIC-14


PIN
NAME

NO.
1

NC

TYPE

DESCRIPTION

No connect

Not connected

Digital output

Receive data output

RE

Digital input

Receive enable Low

DE

Digital input

Driver enable High

Digital input

Driver data input

GND

(1)

7 (1)

Reference potential

Local device ground

Bus output

Digital bus output, Y (Complementary to Z)

10

Bus output

Digital bus output, Z (Complementary to Y)

11

Bus input

Digital bus input, B (Complementary to A)

12

Bus input

Digital bus input, A (Complementary to B)

VCC
(1)
(2)

13 (2)
14 (2)

Supply

3-V to 3.6-V supply

Pin 6 and pin 7 are connected internally.


Pin 13 and pin 14 are connected internally.

Copyright 2014, Texas Instruments Incorporated

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SN65HVD1474, SN65HVD1476, SN65HVD1477
SLLSEJ8D JUNE 2014 REVISED OCTOBER 2014

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7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
MIN

MAX

UNIT

0.5

5.5

Range at any bus pin (A, B, Y, or Z)

13

16.5

Range at any logic pin (D, DE, or RE)

0.3

5.7

Voltage input range, transient pulse, any bus pin (A, B, Y, or Z) through 100

100

100

Receiver output

24

24

mA

170

Supply voltage

VCC

Voltage
Input voltage
Output current
Junction temperature, TJ

Continuous total power dissipation


(1)

See the Thermal


Information table

Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7.2 Handling Ratings


Tstg

Storage temperature range

V(ESD)

(1)
(2)
(3)

Electrostatic discharge

MIN

MAX UNIT

65

150

IEC 61000-4-2 ESD (Contact Discharge), bus pins and GND

16

16

kV

IEC 61000-4-2 ESD (Air-Gap Discharge), bus pins and GND (1) (2)

16

16

kV

IEC 61000-4-4 EFT (Fast transient or burst), bus pins and GND

kV

IEC 60749-26 ESD (Human Body Model), bus pins and GND

(2)

30

30

kV

Human body model (HBM), bus pins and GND (3)

40

40

kV

Human body model (HBM), per JEDEC specification JESD22-A114, all pins

kV

Charged device model (CDM), per JEDEC specification JESD22-C101, all pins

1.5

1.5

kV

Machine model (MM), all pins

300

300

kV

By inference from contact-discharge results, see the Application and Implementation section
Limited by tester capability.
Modeled performance only; based on measured IEC ESD (Contact) capability.

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SN65HVD1474, SN65HVD1476, SN65HVD1477
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SLLSEJ8D JUNE 2014 REVISED OCTOBER 2014

7.3 Recommended Operating Conditions


IEC 61000-4-2 ESD (Contact Discharge), bus pins and GND
VCC

MIN

Supply voltage

NOM MAX

3
(1)

3.3

UNIT

3.6

VI

Input voltage at any bus pin (separately or common mode)

12

VIH

High-level input voltage (Driver, driver enable, and receiver enable inputs)

VCC

VIL

Low-level input voltage (Driver, driver enable, and receiver enable inputs)

0.8

VID

Differential input voltage

12

12

IO

Output current, Driver

60

60

mA

IO

Output current, Receiver

mA

RL

Differential load resistance

54

CL

Differential load capacitance

1/tUI

Signaling rate

60

50

pF

HVD1470, HVD1471

400

HVD1473, HVD1474

20

HVD1476, HVD1477

50

kbps
Mbps

TA (2)

Operating free-air temperature (See the Application and Implementation for thermal
information)

40

125

TJ

Junction Temperature

40

150

(1)
(2)

The algebraic convention, in which the least positive (most negative) limit is designated as minimum is used in this data sheet.
Operation is specified for internal (junction) temperatures up to 150C. Self-heating because of internal power dissipation should be
considered for each application. Maximum junction temperature is internally limited by the thermal shut-down (TSD) circuit which
disables the driver outputs when the junction temperature reaches 170C.

7.4 Thermal Information D Packages


THERMAL METRIC

D
(8 PINS)

D
(14 PINS)

UNIT
C/W

RJA

Junction-to-ambient thermal resistance

110.7

83.3

RJC(top)

Junction-to-case (top) thermal resistance

54.7

42.9

RJB

Junction-to-board thermal resistance

51.3

37.8

JT

Junction-to-top characterization parameter

9.2

9.3

JB

Junction-to-board characterization parameter

50.7

37.5

TJ(TSD)

Thermal shut-down junction temperature

170

7.5 Thermal Information DGS and DGK Packages


THERMAL METRIC

DGS
(10 PINS)

DGK
(8 PINS)

UNIT
C/W

RJA

Junction-to-ambient thermal resistance

165.5

168.7

RJC(top)

Junction-to-case (top) thermal resistance

37.7

62.2

RJB

Junction-to-board thermal resistance

86.4

89.5

JT

Junction-to-top characterization parameter

1.4

7.4

JB

Junction-to-board characterization parameter

84.8

87.9

TJ(TSD)

Thermal shut-down junction temperature

Copyright 2014, Texas Instruments Incorporated

170

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SN65HVD1474, SN65HVD1476, SN65HVD1477
SLLSEJ8D JUNE 2014 REVISED OCTOBER 2014

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7.6 Power Dissipation


PARAMETER

TEST CONDITIONS

Unterminated

Power Dissipation
driver and receiver enabled,
VCC = 3.6 V, TJ = 150C
50% duty cycle square-wave signal at
signaling rate:

HVD1470 and HVD1471 at 400 kbps

HVD1473 and HVD1474 at 20 Mbps

HVD1476 and HVD1477 at 50 Mbps

PD

RS-422 load

RS-485 load

RL = 300 ,
CL = 50 pF (driver)

RL = 100 ,
CL = 50 pF (driver)

RL = 54 ,
CL = 50 pF (driver)

VALUE

HVD1470,
HVD1471

150

HVD1473,
HVD1474

180

HVD1476,
HVD1477

220

HVD1470,
HVD1471

190

HVD1473,
HVD1474

220

HVD1476,
HVD1477

250

HVD1470,
HVD1471

230

HVD1473,
HVD1474

255

HVD1476,
HVD1477

285

UNIT

mW

mW

mW

7.7 Electrical Characteristics


over recommended operating range (unless otherwise specified)
PARAMETER

|VOD|

TEST CONDITIONS

Driver differential output voltage magnitude

MIN

TYP

RL = 60 , 375 on each
output to 7 V to 12 V, See Figure 15

1.5

RL = 54 (RS-485), See Figure 16

1.5

RL = 100 (RS-422) TJ 0C,


VCC 3.2 V, See Figure 16
|VOD|

Change in magnitude of driver differential output voltage

VOC(SS)

Steady-state common-mode output voltage

VOC

Change in differential driver output common-mode voltage

VOC(PP)

Peak-to-peak driver common-mode output voltage

COD

Differential output capacitance

VIT+

Positive-going receiver differential input voltage threshold

VIT

Negative-going receiver differential input voltage threshold

Vhys

Receiver differential input voltage threshold hysteresis


(VIT+ VIT)

VOH

Receiver high-level output voltage

IOH = 8 mA

VOL

Receiver low-level output voltage

IOL = 8 mA

II

Driver input, driver enable, and receiver enable input current

IOZ

Receiver output high-impedance


current

IOS

Driver short-circuit output current

II

RL = 54 , CL = 50 pF, See Figure 16


Center of two 27- load resistors,
See Figure 16

50

50

VCC / 2

50

50

mV

Bus input current (disabled driver)

(1)

-70

200

-140

40

70

2.4

VCC0.3

See

0.2

VO = 0 V or VCC, RE = VCC

VCC = 0 to ROC (max),


DE = GND

(1)

mV

See

mV
V

150

mA

75
100

VI = 12 V
VI = 7 V

mV

VI = 12 V
VI = 7 V

pF
20

0.4

150
HVD1470,
HVD1473

mV

mV

15

HVD1470, HVD1473,
HVD1476

UNIT

500

HVD1476

(1)

MAX

40
240

267

125

333

180

Under any specific conditions, VIT+ is assured to be at least Vhys higher than VIT.
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Electrical Characteristics (continued)


over recommended operating range (unless otherwise specified)
PARAMETER

ICC

TEST CONDITIONS

Supply current (quiescent)

Supply current (dynamic)


Tsd

TYP

MAX

UNIT

Driver and Receiver


enabled

DE = VCC,
RE = GND, No load

MIN

750

1100

Driver enabled,
receiver disabled

DE = VCC, RE = VCC,
No load

350

650

Driver disabled,
receiver enabled

DE = GND,
RE = GND, No load

650

800

Driver and receiver


disabled

DE = GND, D = open,
RE = VCC, No load

0.1

170

See the Typical Characteristics section

Thermal Shut-down junction temperature

7.8 Switching Characteristics 400 kbps


400-kbps devices (SN65HVD1470, SN65HVD1471) bit time 2 s (over recommended operating conditions)
PARAMETER

TEST CONDITIONS

MIN

TYP MAX

UNIT

100

400

750

ns

350

550

ns

40

ns

50

200

ns

300

750

ns

13

25

ns

70

110

ns

ns

45

60

ns

20

115

ns

DRIVER
tr, tf

Driver differential output rise/fall time

tPHL, tPLH

Driver propagation delay

tSK(P)

Driver pulse skew, |tPHL tPLH|

tPHZ, tPLZ

Driver disable time

tPZH, tPZL

Driver enable time

RL = 54 , CL = 50 pF

HVD1470

Receiver enabled

See Figure 17

See Figure 18
and Figure 19

Receiver disabled

RECEIVER
tr, tf

Receiver output rise/fall time

tPHL, tPLH

Receiver propagation delay time

tSK(P)

Receiver pulse skew, |tPHL tPLH|

tPLZ, tPHZ

Receiver disable time

tPZL(1),
tPZH(1)
tPZL(2),
tPZH(2)

Receiver enable time

Copyright 2014, Texas Instruments Incorporated

CL = 15 pF

HVD1470

Driver enabled
Driver disabled

See Figure 20

See Figure 21
See Figure 22

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7.9 Switching Characteristics 20 Mbps


20-Mbps devices (SN65HVD1473, SN65HVD1474) bit time 50 ns (over recommended operating conditions)
PARAMETER

TEST CONDITIONS

MIN

TYP MAX

UNIT

DRIVER
tr, tf

Driver differential output rise/fall time

tPHL, tPLH

Driver propagation delay

tSK(P)

Driver pulse skew, |tPHL tPLH|

tPHZ, tPLZ

Driver disable time

tPZH, tPZL

Driver enable time

RL = 54 , CL = 50 pF

HVD1473

Receiver enabled

See Figure 17

14

ns

10

20

ns

ns

12

25

ns

10

20

ns

10

ns

60

90

ns

See Figure 18 and


Figure 19

Receiver disabled

RECEIVER
tr, tf

Receiver output rise/fall time

tPHL, tPLH

Receiver propagation delay time

tSK(P)

Receiver pulse skew, |tPHL tPLH|

tPLZ, tPHZ

Receiver disable time

tpZL(1), tPZH(1)
tPZL(2), tPZH(2)

Receiver enable time

CL = 15 pF

HVD1473

See Figure 20

ns

17

25

ns

Driver enabled

See Figure 21

12

90

ns

Driver disabled

See Figure 22

7.10 Switching Characteristics 50 Mbps


50-Mbps devices (SN65HVD1476, SN65HVD1477) bit time 20 ns (over recommended operating conditions)
PARAMETER

TEST CONDITIONS

MIN

TYP MAX

UNIT

DRIVER
tr, tf

Driver differential output rise/fall time

tPHL, tPLH

Driver propagation delay

tSK(P)

Driver pulse skew, |tPHL tPLH|

tPHZ, tPLZ

Driver disable time

tPZH, tPZL

Driver enable time

RL = 54 , CL = 50 pF

HVD1476

Receiver enabled

See Figure 17

ns

10

16

ns

3.5

ns

10

20

ns

10

20

ns

See Figure 18 and


Figure 19

Receiver disabled

RECEIVER
tr, tf

Receiver output rise/fall time

tPHL, tPLH

Receiver propagation delay time

tSK(P)

Receiver pulse skew, |tPHL tPLH|

tPLZ, tPHZ

Receiver disable time

tpZL(1), tPZH(1)
tPZL(2), tPZH(2)

10

Receiver enable time

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1
CL = 15 pF

HVD1476

See Figure 20

ns

25

40

ns

ns
ns

15

Driver enabled

See Figure 21

90

ns

Driver disabled

See Figure 22

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7.11 Typical Characteristics


3.5

3.6

Driver Output Voltage (V)

Driver Differential-Output Voltage (V)

VOH
VOL

3.3
2.7
2.4
2.1
1.8
1.5
1.2
0.9
0.6
0.3
0

10

20

30
40
50
60
70
Driver Output Current (mA)

80

90

2
1.5
1
0.5

100

10

20

30
40
50
60
70
Driver Output Current (mA)

D001

Figure 1. Driver Output Voltage vs Driver Output Current

80

90

100
D002

Figure 2. Driver Differential-Output Voltage vs Driver Output


Current
50

2.2

45
2.15

Driver Output Current (mA)

Driver Differential-Output Voltage (V)

2.5

2.1
2.05
2
1.95

40
35
30
25
20
15
10
5

1.9
-7

0
-5

-3
-1
1
3
5
7
Driver Common-Mode Voltage (V)

11

0.5

D003

Figure 3. Driver Differential-Output Voltage vs Driver


Common-Mode Voltage
360

360

355

355

350
345
340
335
330
325
320

1.5
2
2.5
Supply Voltage (V)

3.5
D004

Figure 4. Driver Output Current vs Supply Voltage

Driver Propagation Delay (ns)

Driver Rise and Fall Time (ns)

Differential Driver Output Voltage (V)


100 : Load Line
60 : Load Line

350
345
340
335
330
325
320

315
-40

-20

20
40
60
Temperature (qC)

80

100

120
D009

Figure 5. SN65HVD1470, SN65HVD1471 Driver Rise and Fall


Time vs Temperature

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315
-40

-20

20
40
60
Temperature (qC)

80

100

120
D010

Figure 6. SN65HVD1470, SN65HVD1471 Driver Propagation


Delay vs Temperature

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Typical Characteristics (continued)


10

14

Driver Propagation Delay (ns)

Driver Rise and Fall Time (ns)

9
8
7
6
5
4
3
2
1
0
-40

-20

20
40
60
Temperature (qC)

80

100

12
10
8
6
4
2
0
-40

120

-20

20
40
60
Temperature (qC)

D005

Figure 7. SN65HVD1473, SN65HVD1474 Driver Rise and Fall


Time vs Temperature

80

100

120
D006

Figure 8. SN65HVD1473, SN65HVD1474 Driver Propagation


Delay vs Temperature

12

Series1
Driver Propagation Delay (ns)

Driver Rise and Fall Time (ns)

3.5
3
2.5
2
1.5
1
0.5
0
-40

-20

20
40
60
Temperature (qC)

80

100

10
8
6
4
2
0
-40

120

-20

20
40
60
Temperature (qC)

D011

Figure 9. SN65HVD1476, SN65HVD1477 Driver Rise and Fall


Time vs Temperature

80

100

120
D012

Figure 10. SN65HVD1476, SN65HVD1477 Driver Propagation


Delay vs Temperature
80

42

70
Supply Current (mA)

Supply Current (mA)

41.8

41.6

41.4

60
50
40
30
20

41.2

10
0

41
0

0.05

0.1

0.15
0.2
0.25
Signaling Rate (Mbps)

0.3

0.35

0.4

D013

VCC = 3.3 V
Figure 11. SN65HVD1470, SN65HVD1471 Supply Current vs
Signal Rate

12

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8
10
12
14
Signaling Rate (Mbps)

16

18

20
D007

TA = 25C

Figure 12. SN65HVD1473, SN65HVD1474 Supply Current vs


Signal Rate

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80

70

3.5

60

Receiver output, R (V)

Supply Current (mA)

Typical Characteristics (continued)

50
40
30
20
10

2.5
2
1.5
1
VCM = 12 V
VCM = 0 V
VCM = -7 V

0.5

0
0

10

15
20
25
30
35
Signaling Rate (Mbps)

40

45

0
-150

50

-130

D014

VCC = 3.3 V
Figure 13. SN65HVD1476, SN65HVD1477 Supply Current vs
Signal Rate

-110
-90
-70
Differential Input Voltage (mV)

-50
D008

TA = 25C

Figure 14. Receiver Output vs Input

8 Parameter Measurement Information


The input generator rate is 100 kbps with 50% duty cycle, than 6-ns rise and fall times, and 50- output
impedance.
375 W 1%

VCC
DE
0 V or 3 V

Y
VOD

60 W 1%

+
_

7 V < V (test) < 12 V

375 W 1%
S0301-01

Figure 15. Measurement of Driver Differential Output Voltage With Common-Mode Load

0 V or 3 V

V(Y)

V(Z)

RL / 2

Y
D

VOD
Z

VOC(PP)
RL / 2
CL

DVOC(SS)

VOC
VOC

S0302-01

Figure 16. Measurement of Driver Differential and Common-Mode Output With RS-485 Load

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Parameter Measurement Information (continued)


50%

50%
Y

Figure 17. Measurement of Driver Differential Output Rise and Fall Times and Propagation Delays
Y

3V

50 W

VI

VO

VI

Z
CL = 50 pF 20%

DE
Input
Generator

3V
S1

50%

50%
0V

RL = 110 W
1%

CL Includes Fixture
and Instrumentation
Capacitance

tPZH

VOH
90%

VO

50%
0V

tPHZ

S0304-01

D at 3 V to test non-inverting output, D at 0 V to test inverting output.

Figure 18. Measurement of Driver Enable and Disable Times with Active-High Output and Pulldown Load
3V

Y
D

3V

S1

VO

3V
VI

50%

50%
0V

DE
Input
Generator

RL = 110 W
1%

tPZL

tPLZ

CL = 50 pF 20%
VI

50 W

3V

CL Includes Fixture
and Instrumentation
Capacitance

VO

50%

10%

VOL
S0305-01

D at 0 V to test non-inverting output, D at 3 V to test inverting output.

Figure 19. Measurement of Driver Enable and Disable Times with Active-Low Output and Pullup Load
3V

A
Input
Generator

R
VI

50 W
1.5 V
0V

VI

VO

50%

50%
0V

B
RE

tPLH

CL = 15 pF 20%
VO
CL Includes Fixture
and Instrumentation
Capacitance

tPHL
90% 90%
50%
10%

50%
10%

tr

VOH
VOL

tf
S0306-01

Figure 20. Measurement of Receiver Output Rise and Fall Times and Propagation Delays

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Parameter Measurement Information (continued)


3V

VCC

DE
0 V or 3 V D

B
RE

Input
Generator

VI

1 kW 1%

R VO

S1
CL = 15 pF 20%
CL Includes Fixture
and Instrumentation
Capacitance

50 W

3V
VI

50%

50%
0V

tPZH(1)

tPHZ
VOH
90%

VO

50%

D at 3 V
S1 to GND

0V
tPZL(1)

tPLZ
VCC

VO

50%

D at 0 V
S1 to VCC

10%
VOL
S0307-01

Figure 21. Measurement of Receiver Enable and Disable Times With Driver Enabled

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Parameter Measurement Information (continued)


VCC
A

0 V or 1.5 V

R VO

S1

1.5 V or 0 V

RE

Input
Generator

VI

1 kW 1%
CL = 15 pF 20%
CL Includes Fixture
and Instrumentation
Capacitance

50 W

3V
VI

50%
0V
tPZH(2)
VOH

VO

A at 1.5 V
B at 0 V
S1 to GND

50%
GND
tPZL(2)
VCC

VO

50%
VOL

A at 0 V
B at 1.5 V
S1 to VCC
S0308-01

Figure 22. Measurement of Receiver Enable Times With Driver Disabled

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9 Detailed Description
9.1 Overview
The SN65HVD1470, SN65HVD1471, SN65HVD1473, SN65HVD1474, SN65HVD1476, and SN65HVD1477
devices are low-power, full-duplex RS-485 transceivers available in three speed grades suitable for data
transmission up to 400 kbps, 20 Mbps, and 50 Mbps.
The SN65HVD1471, SN65HVD1474, and SN65HVD1477 are fully enabled with no external enabling pins. The
SN65HVD1470, SN65HVD1473, and SN65HVD1476 have active-high driver enables and active-low receiver
enables. A standby current of less than 5 A can be achieved by disabling both driver and receiver.

9.2 Functional Block Diagram


VCC

VCC
A

R
B

R
B

RE
VCC

DE
D

D
Y

Z
D
Y
GND

GND

Figure 23. Block Diagram


SN65HVD1470, SN65HVD1473, and SN65HVD1476

Figure 24. Block Diagram


SN65HVD1471, SN65HVD1474, and SN65HVD1477

9.3 Feature Description


Internal ESD protection circuits protect the transceiver against Electrostatic Discharges (ESD) according to
IEC61000-4-2 of up to 16 kV, and against electrical fast transients (EFT) according to IEC61000-4-4 of up to 4
kV.
The SN65HVD147x full-duplex family provides internal biasing of the receiver input thresholds in combination
with large input-threshold hysteresis. At a positive input threshold of VIT+ = 20 mV and an input hysteresis of
Vhys = 40 mV, the receiver output remains logic high under a bus-idle or bus-short condition even in the presence
of 120 mVPP differential noise without the need for external failsafe biasing resistors.
Device operation is specified over a wide temperature range from 40C to 125C.

9.4 Device Functional Modes


For the SN65HVD1470, SN65HVD1473, and SN65HVD1476, when the driver enable pin, DE, is logic high, the
differential outputs Y and Z follow the logic states at data input D. A logic high at D causes Y to turn high and Z
to turn low. In this case the differential output voltage defined as VOD = V(Y) V(Z) is positive. When D is low, the
output states reverse, Z turns high, Y becomes low, and VOD is negative.
When DE is low, both outputs turn high-impedance. In this condition the logic state at D is irrelevant. The DE pin
has an internal pulldown resistor to ground, thus when left open the driver is disabled (high-impedance) by
default. The D pin has an internal pullup resistor to VCC, thus, when left open while the driver is enabled, output Y
turns high and Z turns low.
Table 1. Driver Function Table SN65HVD1470, SN65HVD1473, SN65HVD1476
INPUT

ENABLE

DE

Actively drives the bus high

Actively drives the bus low

Driver disabled

OPEN

Driver disabled by default

OPEN

Actively drives the bus high by default

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OUTPUTS

FUNCTION

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When the receiver enable pin, RE, is logic low, the receiver is enabled. When the differential input voltage
defined as VID = V(A) V(B) is positive and higher than the positive input threshold, VIT+, the receiver output, R,
turns high. When VID is negative and less than the negative and lower than the negative input threshold, VIT, the
receiver output, R, turns low. If VID is between VIT+ and VIT the output is indeterminate.
When RE is logic high or left open, the receiver output is high-impedance and the magnitude and polarity of VID
are irrelevant. Internal biasing of the receiver inputs causes the output to go failsafe-high when the transceiver is
disconnected from the bus (open-circuit), the bus lines are shorted (short-circuit), or the bus is not actively driven
(idle bus).
Table 2. Receiver Function Table SN65HVD1470, SN65HVD1473, SN65HVD1476
DIFFERENTIAL INPUT

ENABLE

OUTPUT

FUNCTION

VID = V(A) V(B)

RE

VIT+ < VID

Receives valid bus High

VIT < VID < VIT+

Indeterminate bus state

VID < VIT

Receives valid bus Low

Receiver disabled

OPEN

Receiver disabled by default

Open-circuit bus

Fail-safe high output

Short-circuit bus

Fail-safe high output

Idle (terminated) bus

Fail-safe high output

For the SN65HVD1471, HVD1474, and HVD1477, the driver and receiver are fully enabled, thus the differential
outputs Y and Z follow the logic states at data input D at all times. A logic high at D causes Y to turn high and Z
to turn low. In this case the differential output voltage defined as VOD = V(Y) V(Z) is positive. When D is low, the
output states reverse, Z turns high, Y becomes low, and VOD is negative. The D pin has an internal pullup
resistor to VCC, thus, when left open while the driver is enabled, output Y turns high and Z turns low.
Table 3. Driver Function Table SN65HVD1471, SN65HVD1474, SN65HVD1477
INPUT

OUTPUTS

FUNCTION

Actively drives the bus High

Actively drives the bus Low

OPEN

Actively drives the bus High by default

When the differential input voltage defined as VID = V(A) V(B) is positive and higher than the positive input
threshold, VIT+, the receiver output, R, turns high. When VID is negative and less than the negative input
threshold, VIT, the receiver output, R, turns low. If VID is between VIT+ and VIT the output is indeterminate.
Internal biasing of the receiver inputs causes the output to go failsafe-high when the transceiver is disconnected
from the bus (open-circuit), the bus lines are shorted (short-circuit), or the bus is not actively driven (idle bus).
Table 4. Receiver Function Table SN65HVD1471, SN65HVD1474, SN65HVD1477

18

DIFFERENTIAL INPUT

OUTPUT

VID = V(A) V(B)

VIT+ < VID

Receives valid bus High

VIT < VID < VIT+

Indeterminate bus state

VID < VIT

Receives valid bus Low

Open-circuit bus

Fail-safe high output

Short-circuit bus

Fail-safe high output

Idle (terminated) bus

Fail-safe high output

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FUNCTION

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9.4.1 Equivalent Circuits


VCC

VCC

1 M
1.5 k

1.5 k

D, RE

DE
9V

9V

Figure 25. D and RE Inputs

1 M

Figure 26. DE Input

VCC

VCC

R2

R2

R1

A
R

R1
B

9V

16 V

Figure 27. R Output

R3

R3

Figure 28. Receiver Inputs


VCC

Y
Z
16 V

Figure 29. Driver Outputs

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10 Application and Implementation


NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TIs customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.

10.1 Application Information


The SN65HVD147x family consists of full-duplex RS-485 transceivers commonly used for asynchronous data
transmissions. Full-duplex implementation requires two signal pairs (four wires), and allows each node to
transmit data on one pair while simultaneously receiving data on the other pair.
To eliminate line reflections, each cable end is terminated with a termination resistor, R(T), whose value matches
the characteristic impedance, Z0, of the cable. This method, known as parallel termination, allows for higher data
rates over longer cable length.
Y
R

A
R(T)

R(T)

DE

RE
Master

Slave

RE

DE

Z
R(T)

R(T)
A

R Slave
D
R RE DE D

Figure 30. Typical RS-485 Network With SN65HVD147x Full-Duplex Transceivers

10.2 Typical Application


A full-duplex RS-485 network consists of multiple transceivers connecting in parallel to two bus cables. On one
signal pair, a master driver transmits data to multiple slave receivers. The master driver and slave receivers may
remain fully enabled at all times. On the other signal pair, multiple slave drivers transmit data to the master
receiver. To avoid bus contention, the slave drivers must be intermittently enabled and disabled such that only
one driver is enabled at any time, as in half-duplex communication. The master receiver may remain fully
enabled at all times.
Because the driver may not be disabled, only one driver should be connected to the bus when using the
SN65HVD1471, SN65HVD1474, or SN65HVD1477 device.
Master Enable Control

Slave Enable Control

VCC
R

VCC
A

R
RE
VCC

R
B

DE

RE
DE

Z
D

GND

GND

Figure 31. Full-Duplex Transceiver Configurations


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Typical Application (continued)


10.2.1 Design Requirements
RS-485 is a robust electrical standard suitable for long-distance networking that may be used in a wide range of
applications with varying parameter requirements, such as distance, data rate, and number of nodes.
10.2.1.1 Data Rate and Bus Length
There is an inverse relationship between data rate and cable length, which means the higher the data rate, the
short the cable length; and conversely, the lower the data rate, the longer the cable length. While most RS-485
systems use data rates between 10 kbps and 100 kbps, some applications require data rates up to 250 kbps at
distances of 4000 ft and longer. Longer distances are possible by allowing for small signal jitter of up to 5 or
10%.
10000
Cable Length (ft)

5%, 10%, and 20% Jitter


1000
Conservative
Characteristics
100

10
100

1k

10k

100k

1M

10M

100M

Data Rate (bps)

Figure 32. Cable Length vs Data Rate Characteristic


10.2.1.2 Stub Length
When connecting a node to the bus, the distance between the transceiver inputs and the cable trunk, known as
the stub, should be as short as possible. Stubs present a non-terminated piece of bus line which can introduce
reflections as the length of the stub increases. As a general guideline, the electrical length, or round-trip delay, of
a stub should be less than one-tenth of the rise time of the driver, thus giving a maximum physical stub length as
shown in Equation 1.
L(STUB) 0.1 tr v c

where

tr is the 10/90 rise time of the driver


v is the signal velocity of the cable or trace as a factor of c
c is the speed of light (3 108 m/s)

(1)

Per Equation 1, Table 5 lists the maximum cable-stub lengths for the minimum-driver output rise-times of the
SN65HVD147x full-duplex family of transceivers for a signal velocity of 78%.
Table 5. Maximum Stub Length
DEVICE

MINIMUM DRIVER OUTPUT


RISE TIME (ns)

MAXIMUM STUB LENGTH


(m)

(ft)

SN65HVD1470

100

2.34

7.7

SN65HVD1471

100

2.34

7.7

SN65HVD1473

0.1

0.3

SN65HVD1474

0.1

0.3

SN65HVD1476

0.05

0.15

SN65HVD1477

0.05

0.15

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10.2.1.3 Bus Loading


The RS-485 standard specifies that a compliant driver must be able to driver 32 unit loads (UL), where 1 unit
load represents a load impedance of approximately 12 k. Because the SN65HVD147x family consists of 1/8 UL
transceivers, connecting up to 256 receivers to the bus is possible.
10.2.1.4 Receiver Failsafe
The differential receivers of the SN65HVD147x family are failsafe to invalid bus states caused by the following:
Open bus conditions, such as a disconnected connector
Shorted bus conditions, such as cable damage shorting the twisted-pair together
Idle bus conditions that occur when no driver on the bus is actively driving
In any of these cases, the differential receiver will output a failsafe logic high state so that the output of the
receiver is not indeterminate.
Receiver failsafe is accomplished by offsetting the receiver thresholds such that the input indeterminate range
does not include zero volts differential. In order to comply with the RS-422 and RS-485 standards, the receiver
output must output a high when the differential input VID is more positive than 200 mV, and must output a Low
when VID is more negative than 200 mV. The receiver parameters which determine the failsafe performance are
VIT+, VIT, and Vhys (the separation between VIT+ and VIT). As shown in the Electrical Characteristics table,
differential signals more negative than 200 mV will always cause a low receiver output, and differential signals
more positive than 200 mV will always cause a high receiver output.
When the differential input signal is close to zero, it is still above the VIT+ threshold, and the receiver output will
be High. Only when the differential input is more than Vhys below VIT+ will the receiver output transition to a Low
state. Therefore, the noise immunity of the receiver inputs during a bus fault conditions includes the receiver
hysteresis value, Vhys, as well as the value of VIT+.
R

Vhysmin
40 mV

60

20

20

60

VID (mV)

Vnmax = 120 mVpp

Figure 33. SN65HVD147x Noise Immunity Under Bus Fault Conditions


10.2.1.5 Transient Protection
The bus pins of the SN65HVD147x full-duplex transceiver family include on-chip ESD protection against 30-kV
HBM and 16-kV IEC 61000-4-2 contact discharge. The International Electrotechnical Commission (IEC) ESD
test is far more severe than the HBM ESD test. The 50% higher charge capacitance, C(S), and 78% lower
discharge resistance, R(D), of the IEC model produce significantly higher discharge currents than the HBM model.
As stated in the IEC 61000-4-2 standard, contact discharge is the preferred transient protection test method.
Although IEC air-gap testing is less repeatable than contact testing, air discharge protection levels are inferred
from contact discharge test results.

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R(C)

R(D)

High-Voltage
Pulse
Generator

330
(1.5 k)
Device
Under
Test

150 pF
(100 pF)

C(S)

Current (A)

50 M
(1 M)

40
35
30 10-kV IEC
25
20
15
10
5
0
0
50
100

10-kV HBM
150

200

250

300

Time (ns)

Figure 34. HBM and IEC ESD Models and Currents in Comparison (HBM Values in Parenthesis)
The on-chip implementation of IEC ESD protection significantly increases the robustness of equipment. Common
discharge events occur because of human contact with connectors and cables. Designers may choose to
implement protection against longer duration transients, typically referred to as surge transients.
EFTs are generally caused by relay-contact bounce or the interruption of inductive loads. Surge transients often
result from lightning strikes (direct strike or an indirect strike which induce voltages and currents), or the
switching of power systems, including load changes and short circuit switching. These transients are often
encountered in industrial environments, such as factory automation and power-grid systems.
Figure 35 compares the pulse-power of the EFT and surge transients with the power caused by an IEC ESD
transient. The left hand diagram shows the relative pulse-power for a 0.5kV surge transient and 4-kV EFT
transient, both of which dwarf the 10-kV ESD transient visible in the lower-left corner. 500-V surge transients are
representative of events that may occur in factory environments in industrial and process automations.

22
20
18
16
14
12
10
8
6
4
2
0

Pulse Power (MW)

Pulse Power (kW)

The right hand diagram shows the pulse-power of a 6-kV surge transient, relative to the same 0.5-kV surge
transient. 6-kV surge transients are most likely to occur in power generation and power-grid systems.

0.5-kV Surge

4-kV EFT

10-kV ESD
0

10

15

20

25

Time (s)

30

35

40

3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0

6-kV Surge

0.5-kV Surge
0

10

15

20

25

30

35

40

Time (s)

Figure 35. Power Comparison of ESD, EFT, and Surge Transients


In the case of surge transients, high-energy content is characterized by long pulse duration and slow decaying
pulse power. The electrical energy of a transient that is dumped into the internal protection cells of a transceiver
is converted into thermal energy, which heats and destroys the protection cells, thus destroying the transceiver.
Figure 36 shows the large differences in transient energies for single ESD, EFT, surge transients, and an EFT
pulse train that is commonly applied during compliance testing.

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SLLSEJ8D JUNE 2014 REVISED OCTOBER 2014

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1000

100
Surge
10

Pulse Energy (J)

EFT Pulse Train


0.1

0.01
EFT
10-3
10-4
ESD
10-5
10-6
0.5

8 10

15

Peak Pulse Voltage (kV)

Figure 36. Comparison of Transient Energies


10.2.2 Detailed Design Procedure
In order to protect bus nodes against high-energy transients, the implementation of external transient protection
devices is therefore necessary. Figure 37 shows a protection circuit against 16-kV ESD, 4-kV EFT, and 1-kV
surge transients.
3.3 V
100 nF
R1
VCC
10 k

10 k

TVS

RxD

B
RE

DIR
MCU/
UART

R2
R1

SN65HVD147x
DE
DIR

TVS

D
TxD

Y
10 k

GND
R2

Figure 37. Transient Protection Against ESD, EFT, and Surge transients
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SN65HVD1470, SN65HVD1471, SN65HVD1473


SN65HVD1474, SN65HVD1476, SN65HVD1477
www.ti.com

SLLSEJ8D JUNE 2014 REVISED OCTOBER 2014

Table 6. Bill of Materials


DEVICE

FUNCTION

ORDER NUMBER

MANUFACTURER

XCVR

3.3-V, full-duplex RS-485


transceiver

SN65HVD147xD

TI

R1

10-, pulse-proof thick-film


resistor

CRCW0603010RJNEAHP

Vishay

Bidirectional 400-W
transient suppressor

CDSOT23-SM712

Bourns

R2
TVS

10.2.3 Application Curves

VOD

VOD

RL = 60

RL = 60

Figure 38. SN65HVD1470 and SN65HVD1471, 500 kbps

Figure 39. SN65HVD1473 and SN65HVD1474, 20 Mbps

VOD

RL = 60
Figure 40. SN65HVD1476 and SN65HVD1477, 50 Mbps

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SN65HVD1470, SN65HVD1471, SN65HVD1473


SN65HVD1474, SN65HVD1476, SN65HVD1477
SLLSEJ8D JUNE 2014 REVISED OCTOBER 2014

www.ti.com

11 Power Supply Recommendations


To ensure reliable operation at all data rates and supply voltages, each supply should be buffered with a 100-nF
ceramic capacitor located as close to the supply pins as possible. The TPS76333 is a linear voltage regulator
suitable for the 3.3-V supply.

12 Layout
12.1 Layout Guidelines
On-chip IEC-ESD protection is good for laboratory and portable equipment but never sufficient for EFT and surge
transients occurring in industrial environments. Therefore robust and reliable bus node design requires the use of
external transient protection devices.
Because ESD and EFT transients have a wide frequency bandwidth from approximately 3-MHz to 3-GHz, highfrequency layout techniques must be applied during PCB design.
For successful PCB design, begin with the design of the protection circuit (see Figure 41).
1. Place the protection circuitry close to the bus connector to prevent noise transients from penetrating your
board.
2. Use VCC and ground planes to provide low-inductance. Note that high-frequency currents follow the path of
least inductance and not the path of least impedance.
3. Design the protection components into the direction of the signal path. Do not force the transient currents to
divert from the signal path to reach the protection device.
4. Apply 100-nF to 220-nF bypass capacitors as close as possible to the VCC-pins of transceiver, UART,
controller ICs on the board (see Figure 41).
5. Use at least two vias for VCC and ground connections of bypass capacitors and protection devices to
minimize effective via-inductance (see Figure 41).
6. Use 1-k to 10-k pullup and pulldown resistors for enable lines to limit noise currents in theses lines during
transient events (see Figure 41).
7. Insert pulse-proof resistors into the A and B bus lines if the TVS clamping voltage is higher than the specified
maximum voltage of the transceiver bus pins. These resistors limit the residual clamping current into the
transceiver and prevent it from latching up (see Figure 41).
8. While pure TVS protection is sufficient for surge transients up to 1 kV, higher transients require metal-oxide
varistors (MOVs) which reduce the transients to a few hundred volts of clamping voltage, and transient
blocking units (TBUs) that limit transient current to less than 1 mA.

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SN65HVD1470, SN65HVD1471, SN65HVD1473


SN65HVD1474, SN65HVD1476, SN65HVD1477
www.ti.com

SLLSEJ8D JUNE 2014 REVISED OCTOBER 2014

12.2 Layout Example


GND
5

VCC or GND

MCU

SN65HVD147x
R

TVS
5

R
7
R

R
VCC or GND

1
R

GND

TVS

JMP

JMP

GND

GND

GND

Figure 41. SN65HVD147x Layout Example

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SN65HVD1474, SN65HVD1476, SN65HVD1477
SLLSEJ8D JUNE 2014 REVISED OCTOBER 2014

www.ti.com

13 Device and Documentation Support


13.1 Device Support
13.1.1 Third-Party Products Disclaimer
TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES NOT
CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR SERVICES
OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR SERVICES, EITHER
ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE.

13.2 Related Links


The table below lists quick access links. Categories include technical documents, support and community
resources, tools and software, and quick access to sample or buy.
Table 7. Related Links
PARTS

PRODUCT FOLDER

SAMPLE & BUY

TECHNICAL
DOCUMENTS

TOOLS &
SOFTWARE

SUPPORT &
COMMUNITY

SN65HVD1470

Click here

Click here

Click here

Click here

Click here

SN65HVD1471

Click here

Click here

Click here

Click here

Click here

SN65HVD1473

Click here

Click here

Click here

Click here

Click here

SN65HVD1474

Click here

Click here

Click here

Click here

Click here

SN65HVD1476

Click here

Click here

Click here

Click here

Click here

SN65HVD1477

Click here

Click here

Click here

Click here

Click here

13.3 Trademarks
All trademarks are the property of their respective owners.

13.4 Electrostatic Discharge Caution


This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

13.5 Glossary
SLYZ022 TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.

14 Mechanical, Packaging, and Orderable Information


The following pages include mechanical packaging and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.

28

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PACKAGE OPTION ADDENDUM

www.ti.com

14-Oct-2014

PACKAGING INFORMATION
Orderable Device

Status
(1)

Package Type Package Pins Package


Drawing
Qty

Eco Plan

Lead/Ball Finish

MSL Peak Temp

(2)

(6)

(3)

Op Temp (C)

Device Marking
(4/5)

SN65HVD1470D

ACTIVE

SOIC

14

50

Green (RoHS
& no Sb/Br)

CU NIPDAU

Level-2-260C-1 YEAR

-40 to 125

HVD1470

SN65HVD1470DGS

ACTIVE

VSSOP

DGS

10

80

Green (RoHS
& no Sb/Br)

CU NIPDAUAG

Level-1-260C-UNLIM

-40 to 125

1470

SN65HVD1470DGSR

ACTIVE

VSSOP

DGS

10

2500

Green (RoHS
& no Sb/Br)

CU NIPDAUAG

Level-1-260C-UNLIM

-40 to 125

1470

SN65HVD1470DR

ACTIVE

SOIC

14

2500

Green (RoHS
& no Sb/Br)

CU NIPDAU

Level-2-260C-1 YEAR

-40 to 125

HVD1470

SN65HVD1471D

ACTIVE

SOIC

75

Green (RoHS
& no Sb/Br)

CU NIPDAU

Level-1-260C-UNLIM

-40 to 125

VD1471

SN65HVD1471DGK

ACTIVE

VSSOP

DGK

80

Green (RoHS
& no Sb/Br)

CU NIPDAUAG

Level-1-260C-UNLIM

-40 to 125

1471

SN65HVD1471DGKR

ACTIVE

VSSOP

DGK

2500

Green (RoHS
& no Sb/Br)

CU NIPDAUAG

Level-1-260C-UNLIM

-40 to 125

1471

SN65HVD1471DR

ACTIVE

SOIC

2500

Green (RoHS
& no Sb/Br)

CU NIPDAU

Level-1-260C-UNLIM

-40 to 125

VD1471

SN65HVD1473D

ACTIVE

SOIC

14

50

Green (RoHS
& no Sb/Br)

CU NIPDAU

Level-2-260C-1 YEAR

-40 to 125

HVD1473

SN65HVD1473DGS

ACTIVE

VSSOP

DGS

10

80

Green (RoHS
& no Sb/Br)

CU NIPDAUAG

Level-1-260C-UNLIM

-40 to 125

1473

SN65HVD1473DGSR

ACTIVE

VSSOP

DGS

10

2500

Green (RoHS
& no Sb/Br)

CU NIPDAUAG

Level-1-260C-UNLIM

-40 to 125

1473

SN65HVD1473DR

ACTIVE

SOIC

14

2500

Green (RoHS
& no Sb/Br)

CU NIPDAU

Level-2-260C-1 YEAR

-40 to 125

HVD1473

SN65HVD1474D

ACTIVE

SOIC

75

Green (RoHS
& no Sb/Br)

CU NIPDAU

Level-1-260C-UNLIM

-40 to 125

VD1474

SN65HVD1474DGK

ACTIVE

VSSOP

DGK

80

Green (RoHS
& no Sb/Br)

CU NIPDAUAG

Level-1-260C-UNLIM

-40 to 125

1474

SN65HVD1474DGKR

ACTIVE

VSSOP

DGK

2500

Green (RoHS
& no Sb/Br)

CU NIPDAUAG

Level-1-260C-UNLIM

-40 to 125

1474

SN65HVD1474DR

ACTIVE

SOIC

2500

Green (RoHS
& no Sb/Br)

CU NIPDAU

Level-1-260C-UNLIM

-40 to 125

VD1474

SN65HVD1476D

ACTIVE

SOIC

14

50

Green (RoHS
& no Sb/Br)

CU NIPDAU

Level-2-260C-1 YEAR

-40 to 125

HVD1476

Addendum-Page 1

Samples

PACKAGE OPTION ADDENDUM

www.ti.com

Orderable Device

14-Oct-2014

Status
(1)

Package Type Package Pins Package


Drawing
Qty

Eco Plan

Lead/Ball Finish

MSL Peak Temp

(2)

(6)

(3)

Op Temp (C)

Device Marking
(4/5)

SN65HVD1476DGS

ACTIVE

VSSOP

DGS

10

80

Green (RoHS
& no Sb/Br)

CU NIPDAUAG

Level-1-260C-UNLIM

-40 to 125

1476

SN65HVD1476DGSR

ACTIVE

VSSOP

DGS

10

2500

Green (RoHS
& no Sb/Br)

CU NIPDAUAG

Level-1-260C-UNLIM

-40 to 125

1476

SN65HVD1476DR

ACTIVE

SOIC

14

2500

Green (RoHS
& no Sb/Br)

CU NIPDAU

Level-2-260C-1 YEAR

-40 to 125

HVD1476

SN65HVD1477D

ACTIVE

SOIC

80

Green (RoHS
& no Sb/Br)

CU NIPDAU

Level-1-260C-UNLIM

-40 to 125

VD1477

SN65HVD1477DGK

ACTIVE

VSSOP

DGK

80

Green (RoHS
& no Sb/Br)

CU NIPDAUAG

Level-1-260C-UNLIM

-40 to 125

1477

SN65HVD1477DGKR

ACTIVE

VSSOP

DGK

2500

Green (RoHS
& no Sb/Br)

CU NIPDAUAG

Level-1-260C-UNLIM

-40 to 125

1477

SN65HVD1477DR

ACTIVE

SOIC

2500

Green (RoHS
& no Sb/Br)

CU NIPDAU

Level-1-260C-UNLIM

-40 to 125

VD1477

(1)

The marketing status values are defined as follows:


ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)

Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)

MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

(4)

There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.

(5)

Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
Addendum-Page 2

Samples

PACKAGE OPTION ADDENDUM

www.ti.com

14-Oct-2014

(6)

Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

Addendum-Page 3

PACKAGE MATERIALS INFORMATION


www.ti.com

13-Nov-2014

TAPE AND REEL INFORMATION

*All dimensions are nominal

Device

Package Package Pins


Type Drawing

SN65HVD1470DGSR

VSSOP

DGS

SN65HVD1471DGKR

VSSOP

SN65HVD1473DGSR

VSSOP

SN65HVD1474DGKR

SPQ

Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)

B0
(mm)

K0
(mm)

P1
(mm)

W
Pin1
(mm) Quadrant

10

2500

330.0

12.4

5.3

3.4

1.4

8.0

12.0

Q1

DGK

2500

330.0

12.4

5.3

3.4

1.4

8.0

12.0

Q1

DGS

10

2500

330.0

12.4

5.3

3.4

1.4

8.0

12.0

Q1

VSSOP

DGK

2500

330.0

12.4

5.3

3.4

1.4

8.0

12.0

Q1

SN65HVD1474DR

SOIC

2500

330.0

12.4

6.4

5.2

2.1

8.0

12.0

Q1

SN65HVD1476DGSR

VSSOP

DGS

10

2500

330.0

12.4

5.3

3.4

1.4

8.0

12.0

Q1

SN65HVD1477DGKR

VSSOP

DGK

2500

330.0

12.4

5.3

3.4

1.4

8.0

12.0

Q1

Pack Materials-Page 1

PACKAGE MATERIALS INFORMATION


www.ti.com

13-Nov-2014

*All dimensions are nominal

Device

Package Type

Package Drawing

Pins

SPQ

Length (mm)

Width (mm)

Height (mm)

SN65HVD1470DGSR

VSSOP

DGS

10

2500

364.0

364.0

27.0

SN65HVD1471DGKR

VSSOP

DGK

2500

364.0

364.0

27.0

SN65HVD1473DGSR

VSSOP

DGS

10

2500

364.0

364.0

27.0

SN65HVD1474DGKR

VSSOP

DGK

2500

364.0

364.0

27.0

SN65HVD1474DR

SOIC

2500

340.5

338.1

20.6

SN65HVD1476DGSR

VSSOP

DGS

10

2500

364.0

364.0

27.0

SN65HVD1477DGKR

VSSOP

DGK

2500

364.0

364.0

27.0

Pack Materials-Page 2

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www.ti.com/wirelessconnectivity
Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265
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