ARUSlecture7 fm5-1 PDF

MOS Capacitor under Applied Bias
Oxide doesnt permit any steady-state current between the n+ poly gate and the
substrate. Therefore, if we wait long enough for transient currents to die out, the
electron and hole currents are zero -Jn = 0
and
Jp = 0
Even though the structure isnt in equilibrium, the absence of current implies
that we can relate potential to carrier concentration in the silicon substrate (since
thats all we assumed in deriving the 60 mV rule.)

,,
,,,,,
,,,,,
metal
interconnect to gate
+
_ mn+
gate oxide
ox = 3.9 o
n+ polysilicon gate
+
_
VGB
+V
_ ox
0 +
_VB
,,,,,,,,,
,,,,,,,,,
p-type
s = 11.7 o
+ pm
_
metal interconnect to bulk
Flatband condition: cancel built-in drop by applying the flatband voltage

V GB = ( n+ p ) = V FB = 970 mV for Na = 1017 cm-3
EE 105 Spring 1997

Lecture 7
MOS Electrostatics in Flatband
When VGB = VFB, the gate is shifted from its thermal equilibrium potential (n+)
to a new value of VFB + n+ = -(n+ - p) + n+ = p, which is the same potential
as the p-type bulk. Therefore, there is no potential drop across the MOS structure
in flatband
(x)
charge
density
-tox
E(x)
electric
field
-tox
x
(x)
250mV
potential
-tox
-250mV
VGB + n+
-500mV
-750mV
-1.0V
If we continue to make the gate-bulk voltage more negative, the gate will take on
a negative charge QG < 0. The substrate has a positive charge, which comes from
holes that are attracted by the negative gate charge
EE 105 Spring 1997

Lecture 7
MOS Capacitor in Accumulation
Charge density, electric field, and potential in accumulation:

VGB < VFB, where VFB = - 0.97 V for this example.
(x)
- QG (accumulated holes)
charge
density
-tox
0
QG
E(x)
-tox
electric
field
x
+
QG
Eox =
ox
(x)
-tox
potential
0
x
-250mV
VGB + n+
VGB - VFB
-500mV
-750mV
-1.0V
-1.25V
EE 105 Spring 1997

Lecture 7
MOS Capacitor in Depletion
Now we make VGB > VFB. Note that thermal equilibrium falls into this range of
applied bias.
(x)
QG
charge
density
Xd
0
-tox
-qNa
E (x)
electric
field
0
-tox
Xd
(x)
1V
VGB + n+
potential
VGB
500 mV
-tox
s = 185 mV
Xd
x
-500 mV
Surface potential at oxide/silicon interface is now positive --> n-type

(slightly, ns = 1013 cm-3).
EE 105 Spring 1997

Lecture 7
The Threshold Voltage VTn
Keep increasing VGB --> surface potential keeps increasing. At some point, the
surface is n-type (i.e., we say that it is inverted) and the electron charge makes a
significant contribution to the charge density.
How do we model this phenomenon? We approximate that onset of inversion as
the point where the electron concentration ns at the surface is the same as the
hole concentration Na in the bulk. (In other words, the surface is as n-type as
the bulk is p-type.)
The gate-bulk potential at the onset of inversion is called the threshold voltage,
VTn. To find the threshold voltage, we need to consider the electrostatics in
depletion (no electrons at the surface at the onset of inversion) -- with the surface
potential equal to the opposite of the bulk potential:
s, max = p
(x)
1.5 V
VTn + n+
1V
s,max = - p = 420 mV
Vox
500 mV
VTn - VFB
Xd,max
-tox
0
-500 mV
VB,max
- p
EE 105 Spring 1997

Lecture 7
Threshold Voltage Expression
We can solve for the threshold voltage:

V T V FB = V ox + V B, max
The drop across the depletion region is

V B, max = s, max p = p p = 2 p
The drop across the oxide for VGB = VTn is

Q B, max
Q B, max
V ox = E ox t ox = ---------------------- t ox = ---------------------C ox
ox
The bulk charge in inversion is found from the depletion width Xd,max
2 p
Q B, max = qN a X d, max = qN a --------------------------------------- = 2q s N a ( 2 p )
( ( 1 2 )qN a ) s
where the relationship between the depletion width Xd,max and the drop across
the depletion region s,max - (p) = -p - p = -2p can be found from Poissons
Equation.
EE 105 Spring 1997

Lecture 7
Threshold Voltage (p-type Substrate)
The threshold voltage is the sum of the flatband voltage (which cancels the builtin potential drop from gate to bulk), the drop across the oxide at the onset of
inversion, and the maximum potential drop across the depletion region
1
V Tn = V FB 2 p + --------- 2q s N ( 2 p )
a
C
ox
EE 105 Spring 1997

Lecture 7
The Inverted MOS Capacitor (VGB > VTn)
We consider the surface potential as fixed (pinned) at s,max = - 2 p
(x)
1.5 V
1.0 V
Vox
500 mV
- tox
VGB - VFB
s,max = 420 mV
Xd,max
2 p
- 500 mV
What is the inversion charge QN?

see Section 3.7 for the derivation
consider: bulk charge is constant for VGB > VTn --> all of the additional charge in
the silicon is stored in the inversion layer, once inversion occurs. The inversion
layer is separated from the gate by the gate oxide; we can relate the inversion
charge (per cm2) to the applied voltage over VTn through Cox the capacitance
(per cm2) of the oxide
Q N = C ox ( V GB V Tn )
EE 105 Spring 1997

Lecture 7
Charge Storage in the MOS Structure
Three regions of operation:

Accumulation: qG = Cox (vGB - vFB) ... parallel plate capacitor
Depletion:
qG = - qB(vGB), with the bulk (depletion) charge in the

silicon being a nonlinear function of vGB
Inversion:
qG = - qN - qB,max , where qB,max = qB(vGB = VT) is the

depletion charge at the onset of inversion and
Sketch of the gate charge as a function of gate-bulk voltage:
QG
on
rsi
e
inv
letio
dep
1
ati
ul
VFB = 0.97 V
QB,max
QB(VGB)
0
on
QN(VGB)
VGB (V)
VTn = 0.6 V
cu
ac
EE 105 Spring 1997

Lecture 7
MOS Capacitance
The capacitance of the MOS structure is defined as

dq G
C = ------------dv GB
V GB
From sketch, determine the slope and plot as the capacitance

ion
qG
rs
ve
in
letio
dep
QB,max
qB(vGB)
1
on
ati
ul
vGB (V)
VGB (V)
VTn = 0.6 V
VFB = 0.97 V
um
qN(vGB)
cc
(a)
C/Cox
accumulation
inversion
1.0
0.8
ple
de
0.6
n
tio
0.4
VFB = 0.97 V
2
0.2
VTn = 0.6 V
1
1
0
(b)
EE 105 Spring 1997

Lecture 7
Physical Interpretation of MOS Capacitance
Accumulation: parallel plate capacitor --> C = Cox
Depletion: increment in gate charge is mirrored at bottom of depletion region, so

capacitance model is Cox in series with the depletion region capacitance Cb
gate
Si/SiO2 surface
bulk
ox
C ox = -------t ox
s
C b = -----Xd
Note that Xd is
a function of VGB
C = C ox C b
Inversion: bulk charge is no longer changing with VGB --> an increment in

gate charge is mirrored in the inversion layer under the gate.
The capacitance is therefore the same as in accumulation --> C = Cox
EE 105 Spring 1997

Lecture 7
Understanding MOS Capacitors
Step 1: identify the flatband voltage from the gate and bulk potentials in
equilibrium
Step 2: determine whether VGB > VFB leads to accumulation or to depletion

substrate is n-type --> accumulation
substrate is p-type --> depletion
Why? positive charge on gate ( since VGB - VFB > 0 V) must be mirrored by a
negative charge in the substrate.
n-type substrate: negatively charged electrons are accumulated under the gate
p-type substrate: negatively charged ionized acceptors are left, after holes are
repelled away from positive charge on gate
Step 3: construct C(VGB) plot, using the knowledge that the substrate is depleted
on the other side of VFB from accumulation in Step 2 and that inversion occurs
after depletion. Calculation of VT and Cmin is necessary to quantify the plot
Additional data point: determine state of MOS structure in thermal equilibrium

(VGB = 0 V) ... accumulation or [depletion/inversion]
Example:
gate: p+ polysilicon (where p+ = - 550 mV); gate oxide thickness = 200 ,
substrate: n type silicon, n = 480 mV (Nd = 1018 cm-3)
VFB = - (-550 mV - 480 mV) = + 1.03 V
VGB - VFB > 0 V --> accumulated; substrate is depleted for VGB < 1.03 V
Check: VGB = 0 --> negative charge on gate; positive in bulk (since gate is at
- 0.55 V and substrate is at + 0.48 V in thermal equilibrium) --> positive donors in
depletion region under gate ... and possibly holes due to inversion
EE 105 Spring 1997

Lecture 7
MOS Capacitance-Voltage Curve
Evaluate threshold voltage VTp

2q s N d ( 2 n )
V Tp = V FB 2 n ------------------------------------- = 1.03 2 ( 0.48 ) 3.28 = 3.21 V
C
ox
Minimum capacitance occurs just prior to inversion and is the series

combination of the oxide capacitance and the maximum depletion capacitance:
3.45 10 13 1.04 10 12
ox s
2
C min = -------- ------------------ = ---------------------------- ---------------------------- = 1.16 fF/cm
6
2 10
2.9 10
t ox X d, max
Maximum capacitance is Cox = 1.72 fF/cm2.
C/Cox
1
0.75
1.16/1.72 = 0.67
0.5
0.25
1.03 V
-3.21 V
0
-4
-3
-2
-1
VGB
EE 105 Spring 1997

Lecture 7
EE 105 Spring 1997

Lecture 7

ARUSlecture7 fm5-1 PDF

Uploaded by

Copyright:

Available Formats

ARUSlecture7 fm5-1 PDF

Uploaded by

Document Information

Original Title

Copyright

Available Formats

Share this document

Share or Embed Document

Sharing Options

Did you find this document useful?

Is this content inappropriate?

Copyright:

Available Formats

ARUSlecture7 fm5-1 PDF

Uploaded by

Copyright:

Available Formats

MOS Capacitor under Applied Bias

metal interconnect to bulk

Flatband condition: cancel built-in drop by applying the flatband voltage

EE 105 Spring 1997

MOS Electrostatics in Flatband

EE 105 Spring 1997

MOS Capacitor in Accumulation

Charge density, electric field, and potential in accumulation:

EE 105 Spring 1997

MOS Capacitor in Depletion

Surface potential at oxide/silicon interface is now positive --> n-type

EE 105 Spring 1997

The Threshold Voltage VTn

EE 105 Spring 1997

Threshold Voltage Expression

We can solve for the threshold voltage:

The drop across the depletion region is

The drop across the oxide for VGB = VTn is

EE 105 Spring 1997

Threshold Voltage (p-type Substrate)

EE 105 Spring 1997

The Inverted MOS Capacitor (VGB > VTn)

We consider the surface potential as fixed (pinned) at s,max = - 2 p

What is the inversion charge QN?

EE 105 Spring 1997

Charge Storage in the MOS Structure

Three regions of operation:

qG = - qB(vGB), with the bulk (depletion) charge in the

qG = - qN - qB,max , where qB,max = qB(vGB = VT) is the

Sketch of the gate charge as a function of gate-bulk voltage:

EE 105 Spring 1997

The capacitance of the MOS structure is defined as

From sketch, determine the slope and plot as the capacitance

EE 105 Spring 1997

Physical Interpretation of MOS Capacitance

Accumulation: parallel plate capacitor --> C = Cox

Depletion: increment in gate charge is mirrored at bottom of depletion region, so

Inversion: bulk charge is no longer changing with VGB --> an increment in

EE 105 Spring 1997

Understanding MOS Capacitors

Step 2: determine whether VGB > VFB leads to accumulation or to depletion

substrate is p-type --> depletion

Additional data point: determine state of MOS structure in thermal equilibrium

EE 105 Spring 1997

MOS Capacitance-Voltage Curve

Evaluate threshold voltage VTp

Minimum capacitance occurs just prior to inversion and is the series

EE 105 Spring 1997

EE 105 Spring 1997

You might also like