FSBB30CH60C Smart Power Module

February 2008

TM
Motion-SPM
FSBB30CH60C
Smart Power Module
Features General Description
• UL Certified No.E209204(SPM27-EC package) It is an advanced motion-smart power module (Motion-SPMTM)
that Fairchild has newly developed and designed to provide
• Very low thermal resistance due to using DBC very compact and high performance ac motor drives mainly tar-
• Easy PCB layout due to built in bootstrap diode geting low-power inverter-driven application like air conditioner
and washing machine. It combines optimized circuit protection
• 600V-30A 3-phase IGBT inverter bridge including control ICs and drive matched to low-loss IGBTs. System reliability is fur-
for gate driving and protection
ther enhanced by the integrated under-voltage lock-out and
• Divided negative dc-link terminals for inverter current sensing short-circuit protection. The high speed built-in HVIC provides
applications opto-coupler-less single-supply IGBT gate driving capability that
further reduce the overall size of the inverter system design.
• Single-grounded power supply due to built-in HVIC
Each phase current of inverter can be monitored separately due
• Isolation rating of 2500Vrms/min. to the divided negative dc terminals.

Applications
• AC 100V ~ 253V three-phase inverter drive for small power
ac motor drives
• Home appliances applications like air conditioner and wash-
ing machine

Top View Bottom View

44mm

26.8mm

Figure 1.

©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FSBB30CH60C Rev. D
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Integrated Power Functions
• 600V-30A IGBT inverter for three-phase DC/AC power conversion (Please refer to Figure 3)

Integrated Drive, Protection and System Control Functions

• For inverter high-side IGBTs: Gate drive circuit, High voltage isolated high-speed level shifting
Control circuit under-voltage (UV) protection
Note) Available bootstrap circuit example is given in Figures 12 and 13.
• For inverter low-side IGBTs: Gate drive circuit, Short circuit protection (SC)
Control supply circuit under-voltage (UV) protection
• Fault signaling: Corresponding to UV (Low-side supply) and SC faults
• Input interface: 3.3/5V CMOS/LSTTL compatible, Schmitt trigger input

Pin Configuration

Top View

Figure 2.

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Pin Descriptions
Pin Number Pin Name Pin Description
1 VCC(L) Low-side Common Bias Voltage for IC and IGBTs Driving
2 COM Common Supply Ground
3 IN(UL) Signal Input for Low-side U Phase
4 IN(VL) Signal Input for Low-side V Phase
5 IN(WL) Signal Input for Low-side W Phase
6 VFO Fault Output
7 CFOD Capacitor for Fault Output Duration Time Selection
8 CSC Capacitor (Low-pass Filter) for Short-Current Detection Input
9 IN(UH) Signal Input for High-side U Phase
10 VCC(H) High-side Common Bias Voltage for IC and IGBTs Driving
11 VB(U) High-side Bias Voltage for U Phase IGBT Driving
12 VS(U) High-side Bias Voltage Ground for U Phase IGBT Driving
13 IN(VH) Signal Input for High-side V Phase
14 VCC(H) High-side Common Bias Voltage for IC and IGBTs Driving
15 VB(V) High-side Bias Voltage for V Phase IGBT Driving
16 VS(V) High-side Bias Voltage Ground for V Phase IGBT Driving
17 IN(WH) Signal Input for High-side W Phase
18 VCC(H) High-side Common Bias Voltage for IC and IGBTs Driving
19 VB(W) High-side Bias Voltage for W Phase IGBT Driving
20 VS(W) High-side Bias Voltage Ground for W Phase IGBT Driving
21 NU Negative DC–Link Input for U Phase
22 NV Negative DC–Link Input for V Phase
23 NW Negative DC–Link Input for W Phase
24 U Output for U Phase
25 V Output for V Phase
26 W Output for W Phase
27 P Positive DC–Link Input

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 FSBB30CH60C Smart Power Module
Internal Equivalent Circuit and Input/Output Pins

P (27)
(19) VB(W)
VB
(18) VCC(H)
VCC OUT
COM
(17) IN(WH)
IN VS W (26)
(20) VS(W)

(15) VB(V)
VB
(14) VCC(H)
VCC
OUT
COM
(13) IN(VH)
IN VS V (25)
(16) VS(V)

(11) VB(U)
VB
(10) VCC(H)
VCC OUT
(9) IN(UH) COM
IN VS U (24)
(12) VS(U)

(8) CSC
C(SC) OUT(WL)
(7) CFOD
C(FOD) NW (23)
(6) VFO
VFO

(5) IN(WL)
IN(WL) OUT(VL)
(4) IN(VL)
IN(VL) NV (22)
(3) IN(UL)
IN(UL)
(2) COM
COM
(1) VCC(L) OUT(UL)
VCC
VSL NU (21)

Note:
1. Inverter low-side is composed of three IGBTs, freewheeling diodes for each IGBT and one control IC. It has gate drive and protection functions.
2. Inverter power side is composed of four inverter dc-link input terminals and three inverter output terminals.
3. Inverter high-side is composed of three IGBTs, freewheeling diodes and three drive ICs for each IGBT.

Figure 3.

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Absolute Maximum Ratings (TJ = 25°C, Unless Otherwise Specified)

Inverter Part
Symbol Parameter Conditions Rating Units
VPN Supply Voltage Applied between P- NU, NV, NW 450 V
VPN(Surge) Supply Voltage (Surge) Applied between P- NU, NV, NW 500 V
VCES Collector-emitter Voltage 600 V
± IC Each IGBT Collector Current TC = 25°C 30 A
± ICP Each IGBT Collector Current (Peak) TC = 25°C, Under 1ms Pulse Width 60 A
PC Collector Dissipation TC = 25°C per One Chip 106 W
TJ Operating Junction Temperature (Note 1) -40 ~ 150 °C
Note:
1. The maximum junction temperature rating of the power chips integrated within the SPM is 150°C(@TC ≤ 125°C).

Control Part
Symbol Parameter Conditions Rating Units
VCC Control Supply Voltage Applied between VCC(H), VCC(L) - COM 20 V
VBS High-side Control Bias Applied between VB(U) - VS(U), VB(V) - VS(V), 20 V
Voltage VB(W) - VS(W)
VIN Input Signal Voltage Applied between IN(UH), IN(VH), IN(WH), -0.3~17 V
IN(UL), IN(VL), IN(WL) - COM
VFO Fault Output Supply Voltage Applied between VFO - COM -0.3~VCC+0.3 V
IFO Fault Output Current Sink Current at VFO Pin 5 mA
VSC Current Sensing Input Voltage Applied between CSC - COM -0.3~VCC+0.3 V

Bootstrap Diode Part

Symbol Parameter Conditions Rating Units
VRRM Maximum Repetitive Reverse Voltage 600 V
IF Forward Current TC = 25°C 0.5 A
IFP Forward Current (Peak) TC = 25°C, Under 1ms Pulse Width 2 A
TJ Operating Junction Temperature -40 ~ 150 °C

Total System
Symbol Parameter Conditions Rating Units
VPN(PROT) Self Protection Supply Voltage Limit VCC = VBS = 13.5 ~ 16.5V 400 V
(Short Circuit Protection Capability) TJ = 150°C, Non-repetitive, less than 2μs
TC Module Case Operation Temperature -40°C≤ TJ ≤ 150°C, See Figure 2 -40 ~ 125 °C
TSTG Storage Temperature -40 ~ 150 °C
VISO Isolation Voltage 60Hz, Sinusoidal, AC 1 minute, Connection 2500 Vrms
Pins to heat sink plate

Thermal Resistance
Symbol Parameter Conditions Min. Typ. Max. Units
Rth(j-c)Q Junction to Case Thermal Inverter IGBT part (per 1/6 module) - - 1.17 °C/W
Rth(j-c)F Resistance Inverter FWD part (per 1/6 module) - - 1.87 °C/W
Note:
2. For the measurement point of case temperature(TC), please refer to Figure 2.

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Electrical Characteristics (TJ = 25°C, Unless Otherwise Specified)
Inverter Part
Symbol Parameter Conditions Min. Typ. Max. Units
VCE(SAT) Collector-Emitter Saturation VCC = VBS = 15V IC = 20A, TJ = 25°C - - 2.0 V
Voltage VIN = 5V
VF FWD Forward Voltage VIN = 0V IF = 20A, TJ = 25°C - - 2.1 V
HS tON Switching Times VPN = 300V, VCC = VBS = 15V - 0.75 - μs
IC = 30A
tC(ON) - 0.2 - μs
VIN = 0V ↔ 5V, Inductive Load
tOFF (Note 3) - 0.4 - μs
tC(OFF) - 0.1 - μs
trr - 0.1 - μs
LS tON VPN = 300V, VCC = VBS = 15V - 0.55 - μs
tC(ON) IC = 30A - 0.35 - μs
VIN = 0V ↔ 5V, Inductive Load
tOFF (Note 3) - 0.4 - μs
tC(OFF) - 0.1 - μs
trr - 0.1 - μs
ICES Collector-Emitter VCE = VCES - - 1 mA
Leakage Current
Note:
3. tON and tOFF include the propagation delay time of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition internally.
For the detailed information, please see Figure 4.

Control Part
Symbol Parameter Conditions Min. Typ. Max. Units
IQCCL Quiescent VCC Supply VCC = 15V VCC(L) - COM - - 23 mA
Current IN(UL, VL, WL) = 0V
IQCCH VCC = 15V VCC(H) - COM - - 600 μA
IN(UH, VH, WH) = 0V
IQBS Quiescent VBS Supply VBS = 15V VB(U) - VS(U), VB(V) -VS(V), - - 500 μA
Current IN(UH, VH, WH) = 0V VB(W) - VS(W)
VFOH Fault Output Voltage VSC = 0V, VFO Circuit: 4.7kΩ to 5V Pull-up 4.5 - - V
VFOL VSC = 1V, VFO Circuit: 4.7kΩ to 5V Pull-up - - 0.8 V
VSC(ref) Short Circuit Trip Level VCC = 15V (Note 4) 0.45 0.5 0.55 V
TSD Over-temperature protec- Temperature at LVIC - 160 - °C
tion
ΔTSD Over-temperature protec- Temperature at LVIC - 5 - °C
tion hysterisis
UVCCD Supply Circuit Under- Detection Level 10.7 11.9 13.0 V
Voltage Protection
UVCCR Reset Level 11.2 12.4 13.4 V
UVBSD Detection Level 10 11 12 V
UVBSR Reset Level 10.5 11.5 12.5 V
tFOD Fault-out Pulse Width CFOD = 33nF (Note 5) 1.0 1.8 - ms
VIN(ON) ON Threshold Voltage Applied between IN(UH), IN(VH), IN(WH), IN(UL), 2.8 - - V
IN(VL), IN(WL) - COM
VIN(OFF) OFF Threshold Voltage - - 0.8 V
Note:
4. Short-circuit current protection is functioning only at the low-sides.
5. The fault-out pulse width tFOD depends on the capacitance value of CFOD according to the following approximate equation : CFOD = 18.3 x 10-6 x tFOD[F]

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FSBB30CH60C Rev. D
 FSBB30CH60C Smart Power Module
100% I C 100% I C

trr

V CE IC IC V CE

V IN V IN

0
tON tOFF
tC(ON) tC(OFF)

V IN(ON) 10% IC 90% I C 10% V CE V IN(OFF) 10% V CE 10% I C

(a) turn-on (b) turn-off

Figure 4. Switching Time Definition

Switching Loss (Typical)

SWITCHING LOSS(ON) VS. COLLECTOR CURRENT SWITCHING LOSS(OFF) VS. COLLECTOR CURRENT
2200 900
VCE=300V VCE=300V
2000 V =15V 800 VCC=15V
SWITCHING LOSS, ESW(OFF) [uJ]

CC
SWITCHING LOSS, ESW(ON) [uJ]

1800 VIN=5V VIN=5V

700 TJ=25℃
TJ=25℃
1600
TJ=150℃ TJ=150℃
600
1400

1200 500

1000 400

800
300
600
200
400
100
200

0 0
0 3 6 9 12 15 18 21 24 27 30 33 0 3 6 9 12 15 18 21 24 27 30 33

COLLECTOR CURRENT, Ic [AMPERES] COLLECTOR CURRENT, Ic [AMPERES]

Figure 5. Switching Loss Characteristics

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 FSBB30CH60C Smart Power Module
Bootstrap Diode Part
Symbol Parameter Conditions Min. Typ. Max. Units
VF Forward Voltage IF = 0.1A, TC = 25°C - 2.5 - V
trr Reverse Recovery Time IF = 0.1A, TC = 25°C - 80 - ns

Built in Bootstrap Diode VF-IF Characteristic

1.0

0.9

0.8

0.7

0.6
IF [A]

0.5

0.4

0.3

0.2

0.1
TC=25℃
0.0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

VF [V]

Note:
6. Built in bootstrap diode includes around 15Ω resistance characteristic.

Figure 6. Built in Bootstrap Diode Characteristics

Recommended Operating Conditions

Value
Symbol Parameter Conditions Units
Min. Typ. Max.
VPN Supply Voltage Applied between P - NU, NV, NW - 300 400 V
VCC Control Supply Voltage Applied between VCC(H), VCC(L)- COM 13.5 15 16.5 V
VBS High-side Bias Voltage Applied between VB(U) - VS(U), VB(V) - VS(V), 13.0 15 18.5 V
VB(W) - VS(W)
dVCC/dt, Control supply variation -1 - 1 V/μs
dVBS/dt
tdead Blanking Time for Preventing For Each Input Signal 2.0 - - μs
Arm-short
fPWM PWM Input Signal -40°C ≤ TC ≤ 125°C, -40°C ≤ TJ ≤ 150°C - - 20 kHz
VSEN Voltage for Current Sensing Applied between NU, NV, NW - COM -4 4 V
(Including surge voltage)

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Mechanical Characteristics and Ratings
Limits
Parameter Conditions Units
Min. Typ. Max.
Mounting Torque Mounting Screw: - M3 Recommended 0.62N•m 0.51 0.62 0.80 N•m
Device Flatness Note Figure 5 0 - +120 μm
Weight - 15.00 - g

(+)

(+)

Figure 7. Flatness Measurement Position

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity
FSBB30CH60C FSBB30CH60C SPM27-EC - - 10

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 FSBB30CH60C Smart Power Module
Time Charts of SPMs Protective Function

Input Signal

Protection RESET SET RESET

Circuit State
UVCCR
a1 a6
Control UVCCD
a3
Supply Voltage
a2
a4 a7

Output Current

a5
Fault Output Signal

a1 : Control supply voltage rises: After the voltage rises UVCCR, the circuits start to operate when next input is applied.
a2 : Normal operation: IGBT ON and carrying current.
a3 : Under voltage detection (UVCCD).
a4 : IGBT OFF in spite of control input condition.
a5 : Fault output operation starts.
a6 : Under voltage reset (UVCCR).
a7 : Normal operation: IGBT ON and carrying current.

Figure 8. Under-Voltage Protection (Low-side)

Input Signal

Protection RESET SET RESET

Circuit State
UVBSR
b1 b5
Control UVBSD
b3
Supply Voltage b6
b2
b4

Output Current

High-level (no fault output)

Fault Output Signal

b1 : Control supply voltage rises: After the voltage reaches UVBSR, the circuits start to operate when next input is applied.
b2 : Normal operation: IGBT ON and carrying current.
b3 : Under voltage detection (UVBSD).
b4 : IGBT OFF in spite of control input condition, but there is no fault output signal.
b5 : Under voltage reset (UVBSR)
b6 : Normal operation: IGBT ON and carrying current
Figure 9. Under-Voltage Protection (High-side)

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Lower arms
c6 c7
control input
Protection
circuit state SET RESET

Internal IGBT c4
Gate-Emitter Voltage c3
c2
SC

c1

Output Current c8

SC Reference Voltage
Sensing Voltage
of the shunt
resistance
CR circuit time
constant delay
Fault Output Signal c5

(with the external shunt resistance and CR connection)

c1 : Normal operation: IGBT ON and carrying current.
c2 : Short circuit current detection (SC trigger).
c3 : Hard IGBT gate interrupt.
c4 : IGBT turns OFF.
c5 : Fault output timer operation starts: The pulse width of the fault output signal is set by the external capacitor CFO.
c6 : Input “L” : IGBT OFF state.
c7 : Input “H”: IGBT ON state, but during the active period of fault output the IGBT doesn’t turn ON.
c8 : IGBT OFF state

Figure 10. Short-Circuit Current Protection (Low-side Operation only)

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 FSBB30CH60C Smart Power Module
5V-Line

RPF=4.7㏀ SPM
100Ω
IN(UH) , IN(VH) , IN(WH)
100Ω
CPU IN (UL) , IN (VL) , IN(WL)
100Ω VFO

1nF 1nF 1nF

CPF= 1nF

COM

Note:
1) RC coupling at each input might change depending on the PWM control scheme used in the application and the wiring impedance of the application’s printed circuit board. The
SPM input signal section integrates 5kΩ (typ.) pull-down resistor. Therefore, when using an external filtering resistor, please pay attention to the signal voltage drop at input ter-
minal.
2) The logic input is compatible with standard CMOS or LSTTL outputs.

Figure 11. Recommended CPU I/O Interface Circuit

These Values depend on PWM Control Algorithm

One-Leg Diagram of SPM

P
Vcc VB

IN HO
15V-Line 0.1uF
22uF COM VS

Inverter
Vcc Output
1000uF 1uF IN OUT

COM VSL

Note:
1) The ceramic capacitor placed between VCC-COM should be over 1uF and mounted as close to the pins of the SPM as possible.

Figure 12. Recommended Bootstrap Operation Circuit and Parameters

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 FSBB30CH60C Smart Power Module
5V line 15V line P (27)
(19) V B(W )
VB
(18) V CC(H)
VCC
OUT
RS C BS COM
C BSC (17) IN (W H)
Gating W H IN W (26)
VS
C PS (20) V S(W )

(15) V B(V)
VB
(14) V CC(H)
VCC
OUT
RS COM
C BS C BSC (13) IN (VH)
Gating VH
C PS (16) V S(V)
IN VS V (25)
M
C (11) V B(U)

(10) V CC(H)
VB
VCC C DCS

P OUT Vdc
RS C BS C BSC (9) IN (UH) COM
Gating UH IN VS U (24)

U
(12) V S(U)
C PS
RF
R PF
C SC (8) C SC
C(SC) OUT(W L)
(7) C FOD
C(FOD) R SW
RS N W (23)
C FOD (6) V FO
Fault VFO

RS (5) IN (W L)
Gating W L IN(W L) OUT(VL)
RS (4) IN (VL)
Gating VL IN(VL) N V (22) R SV
RS (3) IN (UL)
Gating UL IN(UL)
(2) COM
C BPF C PS C C C PF COM
PS PS (1) V CC(L) OUT(UL)
VCC R SU
V SL N U (21)

C SP15 C SPC15

Input Signal for R FW

Short-Circuit Protection W-Phase Current R FV

V-Phase Current R FU
U-Phase Current

C FW C FV C FU

Note:
1) To avoid malfunction, the wiring of each input should be as short as possible. (less than 2-3cm)
2) By virtue of integrating an application specific type HVIC inside the SPM, direct coupling to CPU terminals without any opto-coupler or transformer isolation is possible.
3) VFO output is open collector type. This signal line should be pulled up to the positive side of the 5V power supply with approximately 4.7kΩ resistance. Please refer to Figure11.
4) CSP15 of around 7 times larger than bootstrap capacitor CBS is recommended.
5) VFO output pulse width should be determined by connecting an external capacitor(CFOD) between CFOD(pin7) and COM(pin2). (Example : if CFOD = 33 nF, then tFO = 1.8ms
(typ.)) Please refer to the note 5 for calculation method.
6) Input signal is High-Active type. There is a 5kΩ resistor inside the IC to pull down each input signal line to GND. RC coupling circuits should be adopted for the prevention of
input signal oscillation. RSCPS time constant should be selected in the range 50~150ns. CPS should not be less than 1nF.(Recommended RS=100Ω , CPS=1nF)
7) To prevent errors of the protection function, the wiring around RF and CSC should be as short as possible.
8) In the short-circuit protection circuit, please select the RFCSC time constant in the range 1.5~2μs.
9) Each capacitor should be mounted as close to the pins of the SPM as possible.
10) To prevent surge destruction, the wiring between the smoothing capacitor and the P&GND pins should be as short as possible. The use of a high frequency non-inductive
capacitor of around 0.1~0.22μF between the P&GND pins is recommended.
11) Relays are used at almost every systems of electrical equipments of home appliances. In these cases, there should be sufficient distance between the CPU and the relays.
12) CSPC15 should be over 1μF and mounted as close to the pins of the SPM as possible.

Figure 13. Typical Application Circuit

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Detailed Package Outline Drawings

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Detailed Package Outline Drawings (Continued)

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Detailed Package Outline Drawings (Continued)

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FSBB30CH60C Rev. D
 TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global
subsidiaries, and is not intended to be an exhaustive list of all such trademarks.
ACEx® FPS™ PDP SPM™ The Power Franchise®
Build it Now™ F-PFS™ Power-SPM™
CorePLUS™ FRFET® PowerTrench®
CorePOWER™ Global Power ResourceSM Programmable Active Droop™ TinyBoost™
CROSSVOLT™ Green FPS™ QFET® TinyBuck™
CTL™ Green FPS™ e-Series™ QS™ TinyLogic®
Current Transfer Logic™ GTO™ Quiet Series™ TINYOPTO™
EcoSPARK® IntelliMAX™ RapidConfigure™ TinyPower™
EfficentMax™ ISOPLANAR™ Saving our world, 1mW at a time™ TinyPWM™
EZSWITCH™ * MegaBuck™ SmartMax™ TinyWire™
™ MICROCOUPLER™ SMART START™ μSerDes™
MicroFET™ SPM®
®
MicroPak™ STEALTH™
Fairchild® MillerDrive™ SuperFET™ UHC®
Fairchild Semiconductor® MotionMax™ SuperSOT™-3 Ultra FRFET™
FACT Quiet Series™ Motion-SPM™ SuperSOT™-6 UniFET™
FACT® OPTOLOGIC® SuperSOT™-8 VCX™
FAST® OPTOPLANAR® SupreMOS™ VisualMax™
®
FastvCore™ SyncFET™
®
FlashWriter® *

* EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS
PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems 2. A critical component in any component of a life support,
which, (a) are intended for surgical implant into the body or device, or system whose failure to perform can be
(b) support or sustain life, and (c) whose failure to perform reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in a significant injury of the user.

PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification Product Status Definition
This datasheet contains the design specifications for product development.
Advance Information Formative / In Design Specifications may change in any manner without notice.
This datasheet contains preliminary data; supplementary data will be published
Preliminary First Production at a later date. Fairchild Semiconductor reserves the right to make changes at
any time without notice to improve design.
This datasheet contains final specifications. Fairchild Semiconductor reserves
No Identification Needed Full Production the right to make changes at any time without notice to improve the design.
This datasheet contains specifications on a product that is discontinued by
Obsolete Not In Production Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I34

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