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    Biasing PDF

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    Sandhya Krishnamurthy
    This document discusses various biasing schemes for MOSFET amplifiers: 1. Fixing the gate-source voltage (VGS) can provide a desired drain current but is sensitive to process and temperature variations. 2. Connecting a resistor in the source lead provides negative feedback that helps stabilize the drain current against variations. 3. Using a large drain-to-gate feedback resistor biases the MOSFET in saturation by ensuring the gate-source voltage equals the drain-source voltage. This technique uses a single power supply and incorporates a negative feedback mechanism.

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    © All Rights Reserved
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    Biasing PDF

    Uploaded by

    Sandhya Krishnamurthy
    139 views20 pages
    This document discusses various biasing schemes for MOSFET amplifiers: 1. Fixing the gate-source voltage (VGS) can provide a desired drain current but is sensitive to process and temperature variations. 2. Connecting a resistor in the source lead provides negative feedback that helps stabilize the drain current against variations. 3. Using a large drain-to-gate feedback resistor biases the MOSFET in saturation by ensuring the gate-source voltage equals the drain-source voltage. This technique uses a single power supply and incorporates a negative feedback mechanism.

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    This document discusses various biasing schemes for MOSFET amplifiers: 1. Fixing the gate-source voltage (VGS) can provide a desired drain current but is sensitive to process and temperature variations. 2. Connecting a resistor in the source lead provides negative feedback that helps stabilize the drain current against variations. 3. Using a large drain-to-gate feedback resistor biases the MOSFET in saturation by ensuring the gate-source voltage equals the drain-source voltage. This technique uses a single power supply and incorporates a negative feedback mechanism.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    139 views20 pages

    Biasing PDF

    Uploaded by

    Sandhya Krishnamurthy
    This document discusses various biasing schemes for MOSFET amplifiers: 1. Fixing the gate-source voltage (VGS) can provide a desired drain current but is sensitive to process and temperature variations. 2. Connecting a resistor in the source lead provides negative feedback that helps stabilize the drain current against variations. 3. Using a large drain-to-gate feedback resistor biases the MOSFET in saturation by ensuring the gate-source voltage equals the drain-source voltage. This technique uses a single power supply and incorporates a negative feedback mechanism.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 20

    LTSPICE

    2/5/2018 1
    LTSPICE
     Biasing Schemes

    2/5/2018 2
    Recap
     Common Source(CS) Configuration
     Transfer Characterstics in Common Source(CS)
    Configuration

    2/5/2018 3
    I-V Characterstics of common Source
    amplifer

    iD

    C
    B

    Load Line
    Q
    vGS= vIQ
    Slope of
    Load Line ?
    A

    2/5/2018 vDS = vo
    Transfer Characterstics of common Source amplifer

    XA :Cut off AB: Saturation

    iD

    VDD

    BC:Triode
    VDD =VDSQ Region

    VOB

    VOC
    BIASING in MOS Amplifier Circuits

    • An operating point appropriate dc or bias point is


    characterized by a stable and predictable dc current
    ID and by a dc drain to source voltage VDS that ensures
    operation in the saturation region for all expected
    input signal levels

    2/5/2018 6
    Biasing in MOS Amplifier Circuits

    •The first step for an amplifier design  Biasing Design


    •For a MOSFET  keep it in saturation region

    Bias Methodologies:

    1. Fixing VGS;
    2. Fixing VG and a degenerated resistor;
    3. Using a Drain-to-Gate feedback Resistor;
    4. Using a constant current source.
    BIASING by Fixing VGS

    • Fix VGS to the value required to provide desired


    I D.
    • Can be achieved by using an voltage divider.

    Voltage Q
    divider

    2/5/2018 8
    BIASING by Fixing VGS

    • Threshold voltage , oxide capacitance and transistor


    aspect ratio vary widely among devices of the same
    size and type in case of discrete devices.

    2/5/2018 9
    Temperature Effects

    2/5/2018 10
    BIASING by Fixing VGS

    Fixing V is not a good technique.


    GS

    2/5/2018 11
    I-V curves with only fixing bias

    •Assumed that device #1 and


    device #2 are with different I-V
    characteristics due to process
    variation.
    BIASING by Fixing VG and connecting
    a resistance in the source

    • A better bias methodology

    Connecting a resistance in the source ,RS


    2/5/2018 13
    BIASING by Fixing VG and connecting
    a resistance in the source

    VG is constant

    I D VGS

    ID
    2/5/2018 14
    BIASING by Fixing VG and connecting
    a resistance in the source

    • The action of Resistance ,RS is to keep the


    value of bias I as constant current as possible
    D

    • Resistance ,R - Source degeneration Resistor


    S

    • Resistance ,R provides a S

    negative feedback which


    acts to stabilize the value
    of bias current ID .

    2/5/2018 15
    Biasing
    Chapter 4
    by Fixing V and Connecting
    MOS field-Effect Transistors (MOSFETs)
    GS
    Figure 4.30
    Resistance in the source

    FIGURE 4.30 Biasing using a fixed voltage at the gate, VG, and a resistance in the source lead, RS: (a)
    basic arrangement; (b) reduced variability in ID
    Coupling of a Signal Source to
    the gate using a capacitor CC1

    Gain conversion! Coupling cap.

    Signal to be
    amplified (ac input)
    Practical implementation using single and
    two supplies

    FIGURE 4.30 (c) practical implementation using a single supply (e) practical implementation using two
    supplies.
    Biasing MOSFET using large drain to gate
    feedback resistor RG

    •Resistor RG is of high value

    •RG ensures the MOSFET in


    saturation (VGS = VDS)

    •A single power supply is needed.


    Biasing using a Drain-to-Gate Feedback Resistor

    •Negative feedback
    mechanism
    Figure 4.32 Biasing the MOSFET using a large drain-to-gate feedback resistance, RG.

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