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Flash S29GL128N

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S29GLxxxN MirrorBitTM Flash Family

S29GL512N, S29GL256N, S29GL128N


512 Megabit, 256 Megabit, and 128 Megabit,
3.0 Volt-only Page Mode Flash Memory featuring
110 nm MirrorBit process technology

Datasheet ADVANCE
INFORMATION

Distinctive Characteristics
Architectural Advantages — 56-pin TSOP/RTSOP
— 64-ball Fortified BGA
„ Single power supply operation
— 3 volt read, erase, and program operations
Software & Hardware Features
„ Enhanced VersatileI/O™ control
„ Software features
— All input levels (address, control, and DQ input levels)
and outputs are determined by voltage on VIO input. — Program Suspend & Resume: read other sectors
VIO range is 1.65 to VCC before programming operation is completed
— Erase Suspend & Resume: read/program other
„ Manufactured on 110 nm MirrorBit process sectors before an erase operation is completed
technology
— Data# polling & toggle bits provide status
„ SecSi™ (Secured Silicon) Sector region — Unlock Bypass Program command reduces overall
— 128-word/256-byte sector for permanent, secure multiple-word or byte programming time
identification through an 8-word/16-byte random — CFI (Common Flash Interface) compliant: allows host
Electronic Serial Number, accessible through a system to identify and accommodate multiple flash
command sequence devices
— May be programmed and locked at the factory or by
„ Hardware features
the customer
— Advanced Sector Protection
„ Flexible sector architecture — WP#/ACC input accelerates programming time
— S29GL512N: Five hundred twelve 64 Kword (128 (when high voltage is applied) for greater throughput
Kbyte) sectors during system production. Protects first or last sector
— S29GL256N: Two hundred fifty-six 64 Kword (128 regardless of sector protection settings
Kbyte) sectors — Hardware reset input (RESET#) resets device
— Ready/Busy# output (RY/BY#) detects program or
— S29GL128N: One hundred twenty-eight 64 Kword
erase cycle completion
(128 Kbyte) sectors
„ Compatibility with JEDEC standards
— Provides pinout and software compatibility for single-
power supply flash, and superior inadvertent write
protection
„ 100,000 erase cycles per sector
„ 20-year data retention

Performance Characteristics
„ High performance
— 80 ns access time (S29GL128N, S29GL256N),
90 ns access time (S29GL512N)
— 8-word/16-byte page read buffer
— 16-word/32-byte write buffer
— 25 ns page read times
— 16-word/32-byte write buffer reduces overall
programming time for multiple-word updates
„ Low power consumption (typical values at 3.0 V, 5
MHz)
— 30 mA typical interpage active read current;
10 mA typical intrapage active read current
— 50 mA typical erase/program current
— 1 µA typical standby mode current
„ Package options

Publication Number 27631 Revision A Amendment 1 Issue Date October 16, 2003
This document contains information on a product under development at FASL LLC. The information is intended to help you evaluate this product. FASL LLC reserves the
right to change or discontinue work on this proposed product without notice.
A d v a n c e I n f o r m a t i o n

General Description
The S29GL512/256/128N family of devices are 3.0V single power flash memory
manufactured using 110 nm MirrorBit technology. The S29GL512N is a 512 Mbit,
organized as 33,554,432 words or 67,108,864 bytes. The S29GL256N is a 256
Mbit, organized as 16,777,216 words or 33,554,432 bytes. The S29GL128N is a
128 Mbit, organized as 8,388,608 words or 16,777,216 bytes. The devices have
a 16-bit wide data bus that can also function as an 8-bit wide data bus by using
the BYTE# input. The device can be programmed either in the host system or in
standard EPROM programmers.
Access times as fast as 80 ns (S29GL128N, S29GL256N) or 90 ns (S29GL512N)
are available. Note that each access time has a specific operating voltage range
(VCC) and an I/O voltage range (VIO), as specified in the Product Selector Guide
and the Ordering Information sections. The devices are offered in a 56-pin TSOP
or 64-ball Fortified BGA package. Each device has separate chip enable (CE#),
write enable (WE#) and output enable (OE#) controls.
Each device requires only a single 3.0 volt power supply for both read and
write functions. In addition to a VCC input, a high-voltage accelerated program
(WP#/ACC) input provides shorter programming times through increased cur-
rent. This feature is intended to facilitate factory throughput during system
production, but may also be used in the field if desired.
The devices are entirely command set compatible with the JEDEC single-
power-supply Flash standard. Commands are written to the device using
standard microprocessor write timing. Write cycles also internally latch addresses
and data needed for the programming and erase operations.
The sector erase architecture allows memory sectors to be erased and repro-
grammed without affecting the data contents of other sectors. The device is fully
erased when shipped from the factory.
Device programming and erasure are initiated through command sequences.
Once a program or erase operation has begun, the host system need only poll the
DQ7 (Data# Polling) or DQ6 (toggle) status bits or monitor the Ready/Busy#
(RY/BY#) output to determine whether the operation is complete. To facilitate
programming, an Unlock Bypass mode reduces command sequence overhead
by requiring only two write cycles to program data instead of four.
The Enhanced VersatileI/O™ (VIO) control allows the host system to set the
voltage levels that the device generates and tolerates on all input levels (address,
chip control, and DQ input levels) to the same voltage level that is asserted on
the VIO pin. This allows the device to operate in a 1.8 V or 3 V system environ-
ment as required.
Hardware data protection measures include a low VCC detector that automat-
ically inhibits write operations during power transitions. Persistent Sector
Protection provides in-system, command-enabled protection of any combina-
tion of sectors using a single power supply at VCC. Password Sector Protection
prevents unauthorized write and erase operations in any combination of sectors
through a user-defined 64-bit password.
The Erase Suspend/Erase Resume feature allows the host system to pause an
erase operation in a given sector to read or program any other sector and then
complete the erase operation. The Program Suspend/Program Resume fea-
ture enables the host system to pause a program operation in a given sector to
read any other sector and then complete the program operation.

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The hardware RESET# pin terminates any operation in progress and resets the
device, after which it is then ready for a new operation. The RESET# pin may be
tied to the system reset circuitry. A system reset would thus also reset the device,
enabling the host system to read boot-up firmware from the Flash memory
device.
The device reduces power consumption in the standby mode when it detects
specific voltage levels on CE# and RESET#, or when addresses have been stable
for a specified period of time.
The SecSi™ (Secured Silicon) Sector provides a 128-word/256-byte area for
code or data that can be permanently protected. Once this sector is protected,
no further changes within the sector can occur.
The Write Protect (WP#/ACC) feature protects the first or last sector by as-
serting a logic low on the WP# pin.
MirrorBit flash technology combines years of Flash memory manufacturing expe-
rience to produce the highest levels of quality, reliability and cost effectiveness.
The device electrically erases all bits within a sector simultaneously via hot-hole
assisted erase. The data is programmed using hot electron injection.

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A d v a n c e I n f o r m a t i o n

Table of Contents
Product Selector Guide . . . . . . . . . . . . . . . . . . . . . .6 Power-Up Write Inhibit ................................................................................53
S29GL512N ..............................................................................................................6 Common Flash Memory Interface (CFI) . . . . . . . 53
S29GL256N .............................................................................................................6 Table 9. System Interface String.......................................... 54
S29GL128N ..............................................................................................................6 Command Definitions . . . . . . . . . . . . . . . . . . . . . . 56
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Reading Array Data ........................................................................................... 57
Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . .8 Reset Command ................................................................................................. 57
Special Package Handling Instructions ............................................................9 Autoselect Command Sequence ................................................................... 57
Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Enter SecSi Sector/Exit SecSi Sector Command Sequence ................... 58
S29GL512N ......................................................................................................... 11 Word/Byte Program Command Sequence ................................................ 58
S29GL256N ........................................................................................................ 11 Unlock Bypass Command Sequence ........................................................ 59
S29GL128N ........................................................................................................ 11 Write Buffer Programming ......................................................................... 59
Ordering Information . . . . . . . . . . . . . . . . . . . . . . . 12 Accelerated Program ....................................................................................60
Figure 1. Write Buffer Programming Operation....................... 61
S29GL512N Standard Products ....................................................................... 12
Figure 2. Program Operation ............................................... 62
S29GL256N Standard Products .......................................................................13
Program Suspend/Program Resume Command Sequence .................... 62
S29GL128N Standard Products ....................................................................... 14 Figure 3. Program Suspend/Program Resume ........................ 63
Device Bus Operations . . . . . . . . . . . . . . . . . . . . . . 15 Chip Erase Command Sequence ................................................................... 63
Table 1. Device Bus Operations ........................................... 15 Sector Erase Command Sequence ................................................................ 64
Word/Byte Configuration .................................................................................15 Figure 4. Erase Operation ................................................... 65
VersatileIOTM (VIO) Control ..............................................................................15 Erase Suspend/Erase Resume Commands .................................................. 65
Requirements for Reading Array Data ......................................................... 16 Lock Register Command Set Definitions .................................................... 66
Page Mode Read .............................................................................................. 16 Password Protection Command Set Definitions ...................................... 66
Writing Commands/Command Sequences ................................................. 16 Non-Volatile Sector Protection Command Set Definitions ..................68
Write Buffer ......................................................................................................17 Global Volatile Sector Protection Freeze Command Set ......................68
Accelerated Program Operation ................................................................17 Volatile Sector Protection Command Set .................................................. 69
Autoselect Functions ......................................................................................17 SecSi Sector Entry Command ......................................................................... 69
Standby Mode ........................................................................................................17 SecSi Sector Exit Command ...........................................................................70
Automatic Sleep Mode .......................................................................................17 Command Definitions .........................................................................................71
RESET#: Hardware Reset Pin ......................................................................... 18 Table 12. S29GL512N, S29GL256N, S29GL128N Command Defini-
Output Disable Mode ........................................................................................ 18 tions, x16 .........................................................................71
Table 2. Sector Address Table–S29GL512N ........................... 18 Table 13. S29GL512N, S29GL256N, S29GL128N Command Defini-
Table 3. Sector Address Table–S29GL256N ........................... 33 tions, x8 ...........................................................................74
Table 4. Sector Address Table–S29GL128N ........................... 40 Write Operation Status ................................................................................... 76
Autoselect Mode ................................................................................................ 44 DQ7: Data# Polling ........................................................................................... 77
Table 5. Autoselect Codes, (High Voltage Method) ................ 45 Figure 5. Data# Polling Algorithm ........................................ 78
Sector Protection ................................................................................................45 RY/BY#: Ready/Busy# ....................................................................................... 78
Persistent Sector Protection .......................................................................45 DQ6: Toggle Bit I ............................................................................................... 79
Password Sector Protection ........................................................................45 Figure 6. Toggle Bit Algorithm ............................................. 80
WP# Hardware Protection .........................................................................45 DQ2: Toggle Bit II ..............................................................................................80
Selecting a Sector Protection Mode .........................................................45 Reading Toggle Bits DQ6/DQ2 ......................................................................81
Advanced Sector Protection .......................................................................... 46 DQ5: Exceeded Timing Limits .........................................................................81
Lock Register ....................................................................................................... 46 DQ3: Sector Erase Timer ................................................................................82
Table 6. Lock Register ........................................................ 46 DQ1: Write-to-Buffer Abort ...........................................................................82
Persistent Sector Protection .......................................................................... 46 Table 14. Write Operation Status .........................................83
Dynamic Protection Bit (DYB) ...................................................................47 Figure 7. Maximum Negative Overshoot Waveform................. 84
Persistent Protection Bit (PPB) ................................................................. 48 Figure 8. Maximum Positive
Persistent Protection Bit Lock (PPB Lock Bit) ..................................... 48 Overshoot Waveform.......................................................... 84
Table 7. Sector Protection Schemes ..................................... 48 Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . . 84
Persistent Protection Mode Lock Bit .......................................................... 49 DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 85
Password Sector Protection ........................................................................... 49 Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . 86
Password and Password Protection Mode Lock Bit ............................... 49 Figure 9. Test Setup........................................................... 86
64-bit Password .................................................................................................. 50 Table 15. Test Specifications ...............................................86
Persistent Protection Bit Lock (PPB Lock Bit) .......................................... 50 Key to Switching Waveforms . . . . . . . . . . . . . . . 86
SecSi (Secured Silicon) Sector Flash Memory Region ............................. 50 Figure 10. Input Waveforms and
Write Protect (WP#) ........................................................................................52 Measurement Levels........................................................... 86
Hardware Data Protection ..............................................................................52 AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 87
Low VCC Write Inhibit ................................................................................52 Read-Only Operations–S29GL512N Only .................................................. 87
Write Pulse “Glitch” Protection ................................................................52 Read-Only Operations–S29GL256N Only .................................................88
Logical Inhibit ...................................................................................................53 Read-Only Operations–S29GL128N Only ..................................................89

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A d v a n c e I n f o r m a t i o n

Figure 11. Read Operation Timings ....................................... 90 S29GL256N Only .............................................................................................. 100
Figure 12. Page Read Timings .............................................. 90 Alternate CE# Controlled Erase and Program Operations–
Hardware Reset (RESET#) ............................................................................... 91 S29GL128N Only ................................................................................................101
Figure 13. Reset Timings..................................................... 91 Figure 20. Alternate CE# Controlled Write (Erase/Program)
Erase and Program Operations–S29GL512N Only .................................. 92 Operation Timings............................................................ 102
Erase and Program Operations–S29GL256N Only ..................................93 Latchup Characteristics . . . . . . . . . . . . . . . . . . . 102
Erase and Program Operations–S29GL128N Only .................................. 94 Erase And Programming Performance . . . . . . . 103
Figure 14. Program Operation Timings .................................. 95
TSOP Pin and BGA Package Capacitance . . . . 103
Figure 15. Accelerated Program Timing Diagram .................... 95
Figure 16. Chip/Sector Erase Operation Timings ..................... 96 Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 104
Figure 17. Data# Polling Timings TS056/TSR056—56-Pin Standard/Reverse Thin Small Outline Package
(During Embedded Algorithms) ............................................ 97 (TSOP) ..................................................................................................................104
Figure 18. Toggle Bit Timings (During Embedded Algorithms) .. 98 LAA064—64-Ball Fortified Ball Grid Array (FBGA) ..............................105
Figure 19. DQ2 vs. DQ6 ...................................................... 98 Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 106
Alternate CE# Controlled Erase and Program Operations–
S29GL512N Only ................................................................................................ 99
Alternate CE# Controlled Erase and Program Operations–

October 16, 2003 27631A1 S29GLxxxN MirrorBitTM Flash Family 5


A d v a n c e I n f o r m a t i o n

Product Selector Guide


S29GL512N
Part Number S29GL512N

Speed Option VIO = 2.7–3.6 V 90 10


VCC = 2.7–3.6 V VIO = 1.65–1.95 V 10 11

Max. Access Time (ns) 90 100 100 110

Max. CE# Access Time (ns) 90 100 100 110

Max. Page access time (ns) 25 25 35 35

Max. OE# Access Time (ns) 25 25 35 35

S29GL256N
Part Number S29GL256N

Speed Option VIO = 2.7–3.6 V 80 90


VCC = 2.7–3.6 V VIO = 1.65–1.95 V 90 10

Max. Access Time (ns) 80 90 90 100

Max. CE# Access Time (ns) 80 90 90 100

Max. Page access time (ns) 25 25 35 35

Max. OE# Access Time (ns) 25 25 35 35

S29GL128N
Part Number S29GL128N

Speed Option VIO = 2.7–3.6 V 80 90


VCC = 2.7–3.6 V VIO = 1.65–1.95 V 90 10
Max. Access Time (ns) 80 90 90 100

Max. CE# Access Time (ns) 80 90 90 100

Max. Page access time (tPACC) 25 25 35 35

Max. OE# Access Time (ns) 25 25 35 35

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A d v a n c e I n f o r m a t i o n

Block Diagram
RY/BY# DQ15–DQ0 (A-1)
VCC
Sector Switches
VSS
VIO
Erase Voltage Input/Output
Generator Buffers
RESET#

WE#
State
WP#/ACC Control
BYTE#
Command
Register
PGM Voltage
Generator

Chip Enable Data


Output Enable STB Latch
CE#
Logic
OE#

Y-Decoder Y-Gating
STB
Address Latch

VCC Detector Timer

X-Decoder Cell Matrix

AMax**–A0

** AMax GL512N = A24, AMax GL256N = A23, AMax GL128N = A22

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A d v a n c e I n f o r m a t i o n

Connection Diagrams

NC for S29GL128N A23 1 56 A24 NC for S29GL256N


A22 2 55 NC and S29GL128N
A15 3 54 A16
A14 4 53 BYTE#
A13 5 52 VSS
A12 6 51 DQ15/A-1
A11 7 56-Pin Standard TSOP 50 DQ7
A10 8 49 DQ14
A9 9 48 DQ6
A8 10 47 DQ13
A19 11 46 DQ5
A20 12 45 DQ12
WE# 13 44 DQ4
RESET# 14 43 VCC
A21 15 42 DQ11
WP#/ACC 16 41 DQ3
RY/BY# 17 40 DQ10
A18 18 39 DQ2
A17 19 38 DQ9
A7 20 37 DQ1
A6 21 36 DQ8
A5 22 35 DQ0
A4 23 34 OE#
A3 24 33 VSS
A2 25 32 CE#
A1 26 31 A0
NC 27 30 NC
NC 28 29 VIO

NC for S29GL128N A24 1 56 A23 NC for S29GL128N


and S29GL256N NC 2 55 A22
A16 3 54 A15
BYTE# 4 53 A14
VSS 5 52 A13
DQ15/A-1 6 51 A12
DQ7 7 50 A11
DQ14 8 49 A10
DQ6 9 56-Pin Reverse TSOP 48 A9
DQ13 10 47 A8
DQ5 11 46 A19
DQ12 12 45 A20
DQ4 13 44 WE#
VCC 14 43 RESET#
DQ11 15 42 A21
DQ3 16 41 WP#/ACC
DQ10 17 40 RY/BY#
DQ2 18 39 A18
DQ9 19 38 A17
DQ1 20 37 A7
DQ8 21 36 A6
DQ0 22 35 A5
OE# 23 34 A4
VSS 24 33 A3
CE# 25 32 A2
A0 26 31 A1
NC 27 30 NC
VIO 28 29 NC

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A d v a n c e I n f o r m a t i o n

Connection Diagrams

64-ball Fortified BGA


Top View, Balls Facing Down

A8 B8 C8 D8 E8 F8 G8 H8
NC A22 A23 2
VIO VSS A243 NC NC

A7 B7 C7 D7 E7 F7 G7 H7
A13 A12 A14 A15 A16 BYTE# DQ15/A-1 VSS

A6 B6 C6 D6 E6 F6 G6 H6
A9 A8 A10 A11 DQ7 DQ14 DQ13 DQ6

A5 B5 C5 D5 E5 F5 G5 H5
WE# RESET# A21 A19 DQ5 DQ12 VCC DQ4

A4 B4 C4 D4 E4 F4 G4 H4
RY/BY# WP#/ACC A18 A20 DQ2 DQ10 DQ11 DQ3

A3 B3 C3 D3 E3 F3 G3 H3
A7 A17 A6 A5 DQ0 DQ8 DQ9 DQ1

A2 B2 C2 D2 E2 F2 G2 H2
A3 A4 A2 A1 A0 CE# OE# VSS

A1 B1 C1 D1 E1 F1 G1 H1
NC NC NC NC NC VIO NC NC

Note:
1. Ball C8 is NC on S29GL128N
2. Ball F8 is NC on S29GL256N and S29GL128N

Special Package Handling Instructions


Special handling is required for Flash Memory products in molded packages
(TSOP, BGA). The package and/or data integrity may be compromised if the pack-
age body is exposed to temperatures above 150°C for prolonged periods of time.

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A d v a n c e I n f o r m a t i o n

PIN DESCRIPTION
A24–A0 = 25 Address inputs (512 Mb)
A23–A0 = 24 Address inputs (256 Mb)
A22–A0 = 23 Address inputs (128 Mb)
DQ14–DQ0 = 15 Data inputs/outputs
DQ15/A-1 = DQ15 (Data input/output, word mode), A-1 (LSB
Address input, byte mode)
CE# = Chip Enable input
OE# = Output Enable input
WE# = Write Enable input
WP#/ACC = Hardware Write Protect input;
Acceleration input
RESET# = Hardware Reset Pin input
BYTE# = Selects 8-bit or 16-bit mode
RY/BY# = Ready/Busy output
VCC = 3.0 volt-only single power supply
(see Product Selector Guide for speed options and
voltage supply tolerances)
VIO = Output Buffer power
VSS = Device Ground
NC = Pin Not Connected Internally

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A d v a n c e I n f o r m a t i o n

LOGIC SYMBOL
S29GL512N
25
A24–A0 16 or 8
DQ15–DQ0
CE# (A-1)
OE#

WE#

WP#/ACC

RESET#

VIO RY/BY#
BYTE#

S29GL256N
24
A23–A0 16 or 8
DQ15–DQ0
CE# (A-1)
OE#

WE#

WP#/ACC

RESET#

VIO RY/BY#
BYTE#

S29GL128N
23
A22–A0 16 or 8
DQ15–DQ0
CE# (A-1)
OE#

WE#

WP#/ACC

RESET#

VIO RY/BY#
BYTE#

October 16, 2003 27631A1 S29GLxxxN MirrorBitTM Flash Family 11


A d v a n c e I n f o r m a t i o n

Ordering Information
S29GL512N Standard Products
Standard products are available in several packages and operating ranges. The
order number (Valid Combination) is formed by a combination of the following:

S29GL512N 10 FA I 00

ADDITIONAL ORDERING OPTIONS


00 = VIO = 2.7 to 3.6 V, highest address sector protected when WP# = VIL
01 = VIO = 2.7 to 3.6 V, lowest address sector protected when WP# = VIL
02 = VIO = 1.65 to 1.95 V, highest address sector protected when
WP# = VIL
03 = VIO = 1.65 to 1.95 V, lowest address sector protected when
WP# = VIL

TEMPERATURE RANGE
I = Industrial (–40°C to +85°C)

PACKAGE TYPE
TA = Thin Small Outline Package (TSOP) Standard Pinout
RA = Thin Small Outline Package (TSOP) Reverse Pinout
FA = 64-Ball Fortified Ball Grid Array, 1.0 mm pitch package

SPEED OPTION
See Product Selector Guide and Valid Combinations

DEVICE NUMBER/DESCRIPTION
S29GL512N
3.0 Volt-only, 512 Megabit (32 M x 16-Bit/64 M x 8-Bit) Page-Mode Flash Memory
Manufactured on 110 nm MirrorBitTM process technology

Valid Combinations for VCC VIO


Speed (ns)
TSOP Package Range Range

S29GL512N90 TAI00 90
TAI01
2.7–3.6 V
RAI00
S29GL512N10 RAI01 100
2.7–3.6 V
S29GL512N10 TAI02 100
TAI03
1.65–1.95 V
RAI02
S29GL512N11 RAI03 110

Valid Combinations for


Fortified BGA Package Speed VIO VCC
(ns) Range Range
Order Number Package Marking

S29GL512N90 90
2.7–
FAI000 3.6 V
S29GL512N10 FAI001 100
Package marking 2.7–
I
FAI002 TBD 3.6 V
S29GL512N10 100
FAI003 1.65–
1.95 V
S29GL512N11 110

Valid Combinations
Valid Combinations list configurations planned to be supported in volume for this device.
Consult your local sales office to confirm availability of specific valid combinations and to
check on newly released combinations.

12 S29GLxxxN MirrorBitTM Flash Family 27631A1 October 16, 2003


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Ordering Information
S29GL256N Standard Products
Standard products are available in several packages and operating ranges. The
order number (Valid Combination) is formed by a combination of the following:

S29GL256N 90 TA I 00

ADDITIONAL ORDERING OPTIONS


00 = VIO = 2.7 to 3.6 V, highest address sector protected when WP# = VIL
01 = VIO = 2.7 to 3.6 V, lowest address sector protected when WP# = VIL
02 = VIO = 1.65 to 1.95 V, highest address sector protected when
WP# = VIL
03 = VIO = 1.65 to 1.95 V, lowest address sector protected when
WP# = VIL

TEMPERATURE RANGE
I = Industrial (–40°C to +85°C)

PACKAGE TYPE
TA = Thin Small Outline Package (TSOP) Standard Pinout
RA = Thin Small Outline Package (TSOP) Reverse Pinout
FA = 64-Ball Fortified Ball Grid Array 1.0 mm pitch package

SPEED OPTION
See Product Selector Guide and Valid Combinations

DEVICE NUMBER/DESCRIPTION
S29GL256N
3.0 Volt-only Read, 256 Megabit (16 M x 16-Bit/64 M x 8-Bit) Page-Mode Flash Memory
Manufactured on 110 nm MirrorBitTM process technology

Valid Combinations for VCC VIO


Speed (ns)
TSOP Package Range Range

S29GL256N80 TAI00 80
TAI01
2.7–3.6 V
RAI00
S29GL256N90 RAI01 90
2.7–3.6 V
S29GL256N90 TAI02 90
TAI03 1.65–1.95 V
RAI02
S29GL256N10 100
RAI03

Valid Combinations for


Fortified BGA Package Speed VIO VCC
(ns) Range Range
Order Number Package Marking

S29GL256N80 80
2.7–
FAI000 3.6 V
S29GL256N90 FAI001 Package marking 90
2.7–
I
FAI002 TBD 3.6 V
S29GL256N90 90
FAI003 1.65–
1.95 V
S29GL256N100 100

Valid Combinations
Valid Combinations list configurations planned to be supported in volume for this device.
Consult your local sales office to confirm availability of specific valid combinations and to
check on newly released combinations.

October 16, 2003 27631A1 S29GLxxxN MirrorBitTM Flash Family 13


A d v a n c e I n f o r m a t i o n

Ordering Information
S29GL128N Standard Products
Standard products are available in several packages and operating ranges. The
order number (Valid Combination) is formed by a combination of the following:

S29GL128N 90 TA I 000

ADDITIONAL ORDERING OPTIONS


00 = VIO = 2.7 to 3.6 V, highest address sector protected when WP# = VIL
01 = VIO = 2.7 to 3.6 V, lowest address sector protected when WP# = VIL
02 = VIO = 1.65 to 1.95 V, highest address sector protected when
WP# = VIL
03 = VIO = 1.65 to 1.95 V, lowest address sector protected when
WP# = VIL

TEMPERATURE RANGE
I = Industrial (–40°C to +85°C)

PACKAGE TYPE
TA = Thin Small Outline Package (TSOP) Standard Pinout
RA = Thin Small Outline Package (TSOP) Reverse Pinout
FA = 64-Ball Fortified Ball Grid Array 1.0 mm pitch package

SPEED OPTION
See Product Selector Guide and Valid Combinations

DEVICE NUMBER/DESCRIPTION
S29GL128N
3.0 Volt-only Read, 128 Megabit (16 M x 16-Bit/64 M x 8-Bit) Page-Mode Flash Memory
Manufactured on 110 nm MirrorBitTM process technology

Valid Combinations for VCC VIO


Speed (ns)
TSOP Package Range Range

S29GL128N80 TAI00 80
TAI01 2.7–
RAI00 3.6 V
S29GL128N90 RAI01 90
2.7–3.6 V
S29GL128N90 TAI02 90
TAI03 1.65–
RAI02 1.95 V
S29GL128N10 100
RAI03

Valid Combinations for


Fortified BGA Package Speed VIO VCC
(ns) Range Range
Order Number Package Marking

S29GL128N80 80
2.7–
FAI000 3.6 V
S29GL128N90 FAI001 Package marking 90
2.7–
I
FAI002 TBD 3.6 V
S29GL128N90 90
FAI003 1.65–
1.95 V
S29GL128N10 100

Valid Combinations
Valid Combinations list configurations planned to be supported in volume for this device.
Consult your local sales office to confirm availability of specific valid combinations and to
check on newly released combinations.

14 S29GLxxxN MirrorBitTM Flash Family 27631A1 October 16, 2003


A d v a n c e I n f o r m a t i o n

Device Bus Operations


This section describes the requirements and use of the device bus operations,
which are initiated through the internal command register. The command register
itself does not occupy any addressable memory location. The register is a latch
used to store the commands, along with the address and data information
needed to execute the command. The contents of the register serve as inputs to
the internal state machine. The state machine outputs dictate the function of the
device. Table 1 lists the device bus operations, the inputs and control levels they
require, and the resulting output. The following subsections describe each of
these operations in further detail.

Table 1. Device Bus Operations


DQ8–DQ15

WE Addresses DQ0– BYTE# BYTE#


Operation CE# OE# # RESET# WP# ACC (Note 2) DQ7 = VIH = VIL
Read L L H H X X AIN DOUT DOUT

(Note DQ8–DQ14
Write (Program/Erase) L H L H (Note 2) X AIN (Note 3)
3) = High-Z,
DQ15 = A-1
(Note
Accelerated Program L H L H (Note 2) VHH AIN (Note 3)
3)

VCC ± VCC ±
Standby X X X H X High-Z High-Z High-Z
0.3 V 0.3 V

Output Disable L H H H X X X High-Z High-Z High-Z

Reset X X X L X X X High-Z High-Z High-Z

Legend: L = Logic Low = VIL, H = Logic High = VIH, VID = 11.5–12.5 V, VHH = 11.5–12.5V, X = Don’t Care, SA = Sector
Address, AIN = Address In, DIN = Data In, DOUT = Data Out
Notes:
1. Addresses are AMax:A0 in word mode; AMax:A-1 in byte mode. Sector addresses are AMax:A16 in both modes.
2. If WP# = VIL, the first or last sector group remains protected. If WP# = VIH, the first or last sector will be
protected or unprotected as determined by the method described in “Write Protect (WP#)”. All sectors are
unprotected when shipped from the factory (The SecSi Sector may be factory protected depending on version
ordered.)
3. DIN or DOUT as required by command sequence, data polling, or sector protect algorithm (see Figure 2).

Word/Byte Configuration
The BYTE# pin controls whether the device data I/O pins operate in the byte or
word configuration. If the BYTE# pin is set at logic ‘1’, the device is in word con-
figuration, DQ0–DQ15 are active and controlled by CE# and OE#.
If the BYTE# pin is set at logic ‘0’, the device is in byte configuration, and only
data I/O pins DQ0–DQ7 are active and controlled by CE# and OE#. The data I/
O pins DQ8–DQ14 are tri-stated, and the DQ15 pin is used as an input for the
LSB (A-1) address function.

VersatileIOTM (VIO) Control


The VersatileIOTM (VIO) control allows the host system to set the voltage levels
that the device generates and tolerates on CE# and DQ I/Os to the same voltage

October 16, 2003 27631A1 S29GLxxxN MirrorBitTM Flash Family 15


A d v a n c e I n f o r m a t i o n

level that is asserted on VIO. See Ordering Information for VIO options on this
device.
For example, a VI/O of 1.65–3.6 volts allows for I/O at the 1.8 or 3 volt levels,
driving and receiving signals to and from other 1.8 or 3 V devices on the same
data bus.

Requirements for Reading Array Data


To read array data from the outputs, the system must drive the CE# and OE#
pins to VIL. CE# is the power control and selects the device. OE# is the output
control and gates array data to the output pins. WE# should remain at VIH.
The internal state machine is set for reading array data upon device power-up,
or after a hardware reset. This ensures that no spurious alteration of the memory
content occurs during the power transition. No command is necessary in this
mode to obtain array data. Standard microprocessor read cycles that assert valid
addresses on the device address inputs produce valid data on the device data
outputs. The device remains enabled for read access until the command register
contents are altered.
See “Reading Array Data” for more information. Refer to the AC Read-Only Op-
erations table for timing specifications and to Figure 11 for the timing diagram.
Refer to the DC Characteristics table for the active current specification on read-
ing array data.

Page Mode Read


The device is capable of fast page mode read and is compatible with the page
mode Mask ROM read operation. This mode provides faster read access speed for
random locations within a page. The page size of the device is 8 words/16 bytes.
The appropriate page is selected by the higher address bits A(max)–A3. Address
bits A2–A0 in word mode (A2–A-1 in byte mode) determine the specific word
within a page. This is an asynchronous operation; the microprocessor supplies
the specific word location.
The random or initial page access is equal to tACC or tCE and subsequent page
read accesses (as long as the locations specified by the microprocessor falls
within that page) is equivalent to tPACC. When CE# is deasserted and reasserted
for a subsequent access, the access time is tACC or tCE. Fast page mode accesses
are obtained by keeping the “read-page addresses” constant and changing the
“intra-read page” addresses.

Writing Commands/Command Sequences


To write a command or command sequence (which includes programming data
to the device and erasing sectors of memory), the system must drive WE# and
CE# to VIL, and OE# to VIH.
The device features an Unlock Bypass mode to facilitate faster programming.
Once the device enters the Unlock Bypass mode, only two write cycles are re-
quired to program a word or byte, instead of four. The “Word/Byte Program
Command Sequence” section has details on programming data to the device
using both standard and Unlock Bypass command sequences.
An erase operation can erase one sector, multiple sectors, or the entire device.
Table 2 indicates the address space that each sector occupies.

16 S29GLxxxN MirrorBitTM Flash Family 27631A1 October 16, 2003


A d v a n c e I n f o r m a t i o n

Refer to the DC Characteristics table for the active current specification for the
write mode. The AC Characteristics section contains timing specification tables
and timing diagrams for write operations.

Write Buffer
Write Buffer Programming allows the system write to a maximum of 16 words/32
bytes in one programming operation. This results in faster effective programming
time than the standard programming algorithms. See “Write Buffer” for more
information.

Accelerated Program Operation


The device offers accelerated program operations through the ACC function. This
is one of two functions provided by the WP#/ACC pin. This function is primarily
intended to allow faster manufacturing throughput at the factory.
If the system asserts VHH on this pin, the device automatically enters the afore-
mentioned Unlock Bypass mode, temporarily unprotects any protected sector
groups, and uses the higher voltage on the pin to reduce the time required for
program operations. The system would use a two-cycle program command se-
quence as required by the Unlock Bypass mode. Removing VHH from the WP#/
ACC pin returns the device to normal operation. Note that the WP#/ACC pin must
not be at VHH for operations other than accelerated programming, or device dam-
age may result. WP# has an internal pullup; when unconnected, WP# is at VIH.

Autoselect Functions
If the system writes the autoselect command sequence, the device enters the au-
toselect mode. The system can then read autoselect codes from the internal
register (which is separate from the memory array) on DQ7–DQ0. Standard read
cycle timings apply in this mode. Refer to the “Autoselect Mode” section on page
44 and “Autoselect Command Sequence” section on page 57 sections for more
information.

Standby Mode
When the system is not reading or writing to the device, it can place the device
in the standby mode. In this mode, current consumption is greatly reduced, and
the outputs are placed in the high impedance state, independent of the OE#
input.
The device enters the CMOS standby mode when the CE# and RESET# pins are
both held at VIO ± 0.3 V. (Note that this is a more restricted voltage range than
VIH.) If CE# and RESET# are held at VIH, but not within VIO ± 0.3 V, the device
will be in the standby mode, but the standby current will be greater. The device
requires standard access time (tCE) for read access when the device is in either
of these standby modes, before it is ready to read data.
If the device is deselected during erasure or programming, the device draws ac-
tive current until the operation is completed.
Refer to the “DC Characteristics” section on page 85 for the standby current
specification.

Automatic Sleep Mode


The automatic sleep mode minimizes Flash device energy consumption. The de-
vice automatically enables this mode when addresses remain stable for tACC +
30 ns. The automatic sleep mode is independent of the CE#, WE#, and OE# con-

October 16, 2003 27631A1 S29GLxxxN MirrorBitTM Flash Family 17


A d v a n c e I n f o r m a t i o n

trol signals. Standard address access timings provide new data when addresses
are changed. While in sleep mode, output data is latched and always available to
the system. Refer to the “DC Characteristics” section on page 85 for the
automatic sleep mode current specification.

RESET#: Hardware Reset Pin


The RESET# pin provides a hardware method of resetting the device to reading
array data. When the RESET# pin is driven low for at least a period of tRP, the
device immediately terminates any operation in progress, tristates all output
pins, and ignores all read/write commands for the duration of the RESET# pulse.
The device also resets the internal state machine to reading array data. The op-
eration that was interrupted should be reinitiated once the device is ready to
accept another command sequence, to ensure data integrity.
Current is reduced for the duration of the RESET# pulse. When RESET# is held
at VSS±0.3 V, the device draws CMOS standby current (ICC5). If RESET# is held
at VIL but not within VSS±0.3 V, the standby current will be greater.
The RESET# pin may be tied to the system reset circuitry. A system reset would
thus also reset the Flash memory, enabling the system to read the boot-up firm-
ware from the Flash memory.
Refer to the AC Characteristics tables for RESET# parameters and to Figure 13
for the timing diagram.

Output Disable Mode


When the OE# input is at VIH, output from the device is disabled. The output pins
are placed in the high impedance state.

Table 2. Sector Address Table–S29GL512N

8-bit 16-bit
Sector Size
Address Range Address Range
(Kbytes/
Sector A24–A16 (in hexadecimal) (in hexadecimal)
Kwords)

SA0 0 0 0 0 0 0 0 0 0 128/64 0000000–001FFFF 0000000–000FFFF

SA1 0 0 0 0 0 0 0 0 1 128/64 0020000–003FFFF 0010000–001FFFF

SA2 0 0 0 0 0 0 0 1 0 128/64 0040000–005FFFF 0020000–002FFFF

SA3 0 0 0 0 0 0 0 1 1 128/64 0060000–007FFFF 0030000–003FFFF

SA4 0 0 0 0 0 0 1 0 0 128/64 0080000–009FFFF 0040000–004FFFF

SA5 0 0 0 0 0 0 1 0 1 128/64 00A0000–00BFFFF 0050000–005FFFF

SA6 0 0 0 0 0 0 1 1 0 128/64 00C0000–00DFFFF 0060000–006FFFF

SA7 0 0 0 0 0 0 1 1 1 128/64 00E0000–00FFFFF 0070000–007FFFF

SA8 0 0 0 0 0 1 0 0 0 128/64 0100000–011FFFF 0080000–008FFFF

18 S29GLxxxN MirrorBitTM Flash Family 27631A1 October 16, 2003


A d v a n c e I n f o r m a t i o n

Table 2. Sector Address Table–S29GL512N (Continued)

8-bit 16-bit
Sector Size
Address Range Address Range
(Kbytes/
Sector A24–A16 (in hexadecimal) (in hexadecimal)
Kwords)

SA9 0 0 0 0 0 1 0 0 1 128/64 0120000–013FFFF 0090000–009FFFF

SA10 0 0 0 0 0 1 0 1 0 128/64 0140000–015FFFF 00A0000–00AFFFF

SA11 0 0 0 0 0 1 0 1 1 128/64 0160000–017FFFF 00B0000–00BFFFF

SA12 0 0 0 0 0 1 1 0 0 128/64 0180000–019FFFF 00C0000–00CFFFF

SA13 0 0 0 0 0 1 1 0 1 128/64 01A0000–01BFFFF 00D0000–00DFFFF

SA14 0 0 0 0 0 1 1 1 0 128/64 01C0000–01DFFFF 00E0000–00EFFFF

SA15 0 0 0 0 0 1 1 1 1 128/64 01E0000–01FFFFF 00F0000–00FFFFF

SA16 0 0 0 0 1 0 0 0 0 128/64 0200000–021FFFF 0100000–010FFFF

SA17 0 0 0 0 1 0 0 0 1 128/64 0220000–023FFFF 0110000–011FFFF

SA18 0 0 0 0 1 0 0 1 0 128/64 0240000–025FFFF 0120000–012FFFF

SA19 0 0 0 0 1 0 0 1 1 128/64 0260000–027FFFF 0130000–013FFFF

SA20 0 0 0 0 1 0 1 0 0 128/64 0280000–029FFFF 0140000–014FFFF

SA21 0 0 0 0 1 0 1 0 1 128/64 02A0000–02BFFFF 0150000–015FFFF

SA22 0 0 0 0 1 0 1 1 0 128/64 02C0000–02DFFFF 0160000–016FFFF

SA23 0 0 0 0 1 0 1 1 1 128/64 02E0000–02FFFFF 0170000–017FFFF

SA24 0 0 0 0 1 1 0 0 0 128/64 0300000–031FFFF 0180000–018FFFF

SA25 0 0 0 0 1 1 0 0 1 128/64 0320000–033FFFF 0190000–019FFFF

SA26 0 0 0 0 1 1 0 1 0 128/64 0340000–035FFFF 01A0000–01AFFFF

SA27 0 0 0 0 1 1 0 1 1 128/64 0360000–037FFFF 01B0000–01BFFFF

SA28 0 0 0 0 1 1 1 0 0 128/64 0380000–039FFFF 01C0000–01CFFFF

SA29 0 0 0 0 1 1 1 0 1 128/64 03A0000–03BFFFF 01D0000–01DFFFF

SA30 0 0 0 0 1 1 1 1 0 128/64 03C0000–03DFFFF 01E0000–01EFFFF

SA31 0 0 0 0 1 1 1 1 1 128/64 03E0000–0EFFFFF 01F0000–01FFFFF

SA32 0 0 0 1 0 0 0 0 0 128/64 0400000–041FFFF 0200000–020FFFF

SA33 0 0 0 1 0 0 0 0 1 128/64 0420000–043FFFF 0210000–021FFFF

SA34 0 0 0 1 0 0 0 1 0 128/64 0440000–045FFFF 0220000–022FFFF

SA35 0 0 0 1 0 0 0 1 1 128/64 0460000–047FFFF 0230000–023FFFF

SA36 0 0 0 1 0 0 1 0 0 128/64 0480000–049FFFF 0240000–024FFFF

SA37 0 0 0 1 0 0 1 0 1 128/64 04A0000–04BFFFF 0250000–025FFFF

SA38 0 0 0 1 0 0 1 1 0 128/64 04C0000–04DFFFF 0260000–026FFFF

SA39 0 0 0 1 0 0 1 1 1 128/64 04E0000–04FFFFF 0270000–027FFFF

SA40 0 0 0 1 0 1 0 0 0 128/64 0500000–051FFFF 0280000–028FFFF

SA41 0 0 0 1 0 1 0 0 1 128/64 0520000–053FFFF 0290000–029FFFF

SA42 0 0 0 1 0 1 0 1 0 128/64 0540000–055FFFF 02A0000–02AFFFF

SA43 0 0 0 1 0 1 0 1 1 128/64 0560000–057FFFF 02B0000–02BFFFF

October 16, 2003 27631A1 S29GLxxxN MirrorBitTM Flash Family 19


A d v a n c e I n f o r m a t i o n

Table 2. Sector Address Table–S29GL512N (Continued)

8-bit 16-bit
Sector Size
Address Range Address Range
(Kbytes/
Sector A24–A16 (in hexadecimal) (in hexadecimal)
Kwords)

SA44 0 0 0 1 0 1 1 0 0 128/64 0580000–059FFFF 02C0000–02CFFFF

SA45 0 0 0 1 0 1 1 0 1 128/64 05A0000–05BFFFF 02D0000–02DFFFF

SA46 0 0 0 1 0 1 1 1 0 128/64 05C0000–05DFFFF 02E0000–02EFFFF

SA47 0 0 0 1 0 1 1 1 1 128/64 05E0000–05FFFFF 02F0000–02FFFFF

SA48 0 0 0 1 1 0 0 0 0 128/64 0600000–061FFFF 0300000–030FFFF

SA49 0 0 0 1 1 0 0 0 1 128/64 0620000–063FFFF 0310000–031FFFF

SA50 0 0 0 1 1 0 0 1 0 128/64 0640000–065FFFF 0320000–032FFFF

SA51 0 0 0 1 1 0 0 1 1 128/64 0660000–067FFFF 0330000–033FFFF

SA52 0 0 0 1 1 0 1 0 0 128/64 0680000–069FFFF 0340000–034FFFF

SA53 0 0 0 1 1 0 1 0 1 128/64 06A0000–06BFFFF 0350000–035FFFF

SA54 0 0 0 1 1 0 1 1 0 128/64 06C0000–06DFFFF 0360000–036FFFF

SA55 0 0 0 1 1 0 1 1 1 128/64 06E0000–06FFFFF 0370000–037FFFF

SA56 0 0 0 1 1 1 0 0 0 128/64 0700000–071FFFF 0380000–038FFFF

SA57 0 0 0 1 1 1 0 0 1 128/64 0720000–073FFFF 0390000–039FFFF

SA58 0 0 0 1 1 1 0 1 0 128/64 0740000–075FFFF 03A0000–03AFFFF

SA59 0 0 0 1 1 1 0 1 1 128/64 0760000–077FFFF 03B0000–03BFFFF

SA60 0 0 0 1 1 1 1 0 0 128/64 0780000–079FFFF 03C0000–03CFFFF

SA61 0 0 0 1 1 1 1 0 1 128/64 07A0000–07BFFFF 03D0000–03DFFFF

SA62 0 0 0 1 1 1 1 1 0 128/64 07C0000–07DFFFF 03E0000–03EFFFF

SA63 0 0 0 1 1 1 1 1 1 128/64 07E0000–07FFFFF 03F0000–03FFFFF

SA64 0 0 1 0 0 0 0 0 0 128/64 0800000–081FFFF 0400000–040FFFF

SA65 0 0 1 0 0 0 0 0 1 128/64 0820000–083FFFF 0410000–041FFFF

SA66 0 0 1 0 0 0 0 1 0 128/64 0840000–085FFFF 0420000–042FFFF

SA67 0 0 1 0 0 0 0 1 1 128/64 0860000–087FFFF 0430000–043FFFF

SA68 0 0 1 0 0 0 1 0 0 128/64 0880000–089FFFF 0440000–044FFFF

SA69 0 0 1 0 0 0 1 0 1 128/64 08A0000–08BFFFF 0450000–045FFFF

SA70 0 0 1 0 0 0 1 1 0 128/64 08C0000–08DFFFF 0460000–046FFFF

SA71 0 0 1 0 0 0 1 1 1 128/64 08E0000–08FFFFF 0470000–047FFFF

SA72 0 0 1 0 0 1 0 0 0 128/64 0900000–091FFFF 0480000–048FFFF

SA73 0 0 1 0 0 1 0 0 1 128/64 0920000–093FFFF 0490000–049FFFF

SA74 0 0 1 0 0 1 0 1 0 128/64 0940000–095FFFF 04A0000–04AFFFF

SA75 0 0 1 0 0 1 0 1 1 128/64 0960000–097FFFF 04B0000–04BFFFF

SA76 0 0 1 0 0 1 1 0 0 128/64 0980000–099FFFF 04C0000–04CFFFF

SA77 0 0 1 0 0 1 1 0 1 128/64 09A0000–09BFFFF 04D0000–04DFFFF

SA78 0 0 1 0 0 1 1 1 0 128/64 09C0000–09DFFFF 04E0000–04EFFFF

20 S29GLxxxN MirrorBitTM Flash Family 27631A1 October 16, 2003


A d v a n c e I n f o r m a t i o n

Table 2. Sector Address Table–S29GL512N (Continued)

8-bit 16-bit
Sector Size
Address Range Address Range
(Kbytes/
Sector A24–A16 (in hexadecimal) (in hexadecimal)
Kwords)

SA79 0 0 1 0 0 1 1 1 1 128/64 09E0000–09FFFFF 04F0000–04FFFFF

SA80 0 0 1 0 1 0 0 0 0 128/64 0A00000–0A1FFFF 0500000–050FFFF

SA81 0 0 1 0 1 0 0 0 1 128/64 0A20000–0A3FFFF 0510000–051FFFF

SA82 0 0 1 0 1 0 0 1 0 128/64 0A40000–0A5FFFF 0520000–052FFFF

SA83 0 0 1 0 1 0 0 1 1 128/64 0A60000–0A7FFFF 0530000–053FFFF

SA84 0 0 1 0 1 0 1 0 0 128/64 0A80000–0A9FFFF 0540000–054FFFF

SA85 0 0 1 0 1 0 1 0 1 128/64 0AA0000–0ABFFFF 0550000–055FFFF

SA86 0 0 1 0 1 0 1 1 0 128/64 0AC0000–0ADFFFF 0560000–056FFFF

SA87 0 0 1 0 1 0 1 1 1 128/64 0AE0000–0AFFFFF 0570000–057FFFF

SA88 0 0 1 0 1 1 0 0 0 128/64 0B00000–0B1FFFF 0580000–058FFFF

SA89 0 0 1 0 1 1 0 0 1 128/64 0B20000–0B3FFFF 0590000–059FFFF

SA90 0 0 1 0 1 1 0 1 0 128/64 0B40000–0B5FFFF 05A0000–05AFFFF

SA91 0 0 1 0 1 1 0 1 1 128/64 0B60000–0B7FFFF 05B0000–05BFFFF

SA92 0 0 1 0 1 1 1 0 0 128/64 0B80000–0B9FFFF 05C0000–05CFFFF

SA93 0 0 1 0 1 1 1 0 1 128/64 0BA0000–0BBFFFF 05D0000–05DFFFF

SA94 0 0 1 0 1 1 1 1 0 128/64 0BC0000–0BDFFFF 05E0000–05EFFFF

SA95 0 0 1 0 1 1 1 1 1 128/64 0BE0000–0BFFFFF 05F0000–05FFFFF

SA96 0 0 1 1 0 0 0 0 0 128/64 0C00000–0C1FFFF 0600000–060FFFF

SA97 0 0 1 1 0 0 0 0 1 128/64 0C20000–0C3FFFF 0610000–061FFFF

SA98 0 0 1 1 0 0 0 1 0 128/64 0C40000–0C5FFFF 0620000–062FFFF

SA99 0 0 1 1 0 0 0 1 1 128/64 0C60000–0C7FFFF 0630000–063FFFF

SA100 0 0 1 1 0 0 1 0 0 128/64 0C80000–0C9FFFF 0640000–064FFFF

SA101 0 0 1 1 0 0 1 0 1 128/64 0CA0000–0CBFFFF 0650000–065FFFF

SA102 0 0 1 1 0 0 1 1 0 128/64 0CC0000–0CDFFFF 0660000–066FFFF

SA103 0 0 1 1 0 0 1 1 1 128/64 0CE0000–0CFFFFF 0670000–067FFFF

SA104 0 0 1 1 0 1 0 0 0 128/64 0D00000–0D1FFFF 0680000–068FFFF

SA105 0 0 1 1 0 1 0 0 1 128/64 0D20000–0D3FFFF 0690000–069FFFF

SA106 0 0 1 1 0 1 0 1 0 128/64 0D40000–0D5FFFF 06A0000–06AFFFF

SA107 0 0 1 1 0 1 0 1 1 128/64 0D60000–0D7FFFF 06B0000–06BFFFF

SA108 0 0 1 1 0 1 1 0 0 128/64 0D80000–0D9FFFF 06C0000–06CFFFF

SA109 0 0 1 1 0 1 1 0 1 128/64 0DA0000–0DBFFFF 06D0000–06DFFFF

SA110 0 0 1 1 0 1 1 1 0 128/64 0DC0000–0DDFFFF 06E0000–06EFFFF

SA111 0 0 1 1 0 1 1 1 1 128/64 0DE0000–0DFFFFF 06F0000–06FFFFF

SA112 0 0 1 1 1 0 0 0 0 128/64 0E00000–0E1FFFF 0700000–070FFFF

SA113 0 0 1 1 1 0 0 0 1 128/64 0E20000–0E3FFFF 0710000–071FFFF

October 16, 2003 27631A1 S29GLxxxN MirrorBitTM Flash Family 21


A d v a n c e I n f o r m a t i o n

Table 2. Sector Address Table–S29GL512N (Continued)

8-bit 16-bit
Sector Size
Address Range Address Range
(Kbytes/
Sector A24–A16 (in hexadecimal) (in hexadecimal)
Kwords)

SA114 0 0 1 1 1 0 0 1 0 128/64 0E40000–0E5FFFF 0720000–072FFFF

SA115 0 0 1 1 1 0 0 1 1 128/64 0E60000–0E7FFFF 0730000–073FFFF

SA116 0 0 1 1 1 0 1 0 0 128/64 0E80000–0E9FFFF 0740000–074FFFF

SA117 0 0 1 1 1 0 1 0 1 128/64 0EA0000–0EBFFFF 0750000–075FFFF

SA118 0 0 1 1 1 0 1 1 0 128/64 0EC0000–0EDFFFF 0760000–076FFFF

SA119 0 0 1 1 1 0 1 1 1 128/64 0EE0000–0EFFFFF 0770000–077FFFF

SA120 0 0 1 1 1 1 0 0 0 128/64 0F00000–0F1FFFF 0780000–078FFFF

SA121 0 0 1 1 1 1 0 0 1 128/64 0F20000–0F3FFFF 0790000–079FFFF

SA122 0 0 1 1 1 1 0 1 0 128/64 0F40000–0F5FFFF 07A0000–07AFFFF

SA123 0 0 1 1 1 1 0 1 1 128/64 0F60000–0F7FFFF 07B0000–07BFFFF

SA124 0 0 1 1 1 1 1 0 0 128/64 0F80000–0F9FFFF 07C0000–07CFFFF

SA125 0 0 1 1 1 1 1 0 1 128/64 0FA0000–0FBFFFF 07D0000–07DFFFF

SA126 0 0 1 1 1 1 1 1 0 128/64 0FC0000–0FDFFFF 07E0000–07EFFFF

SA127 0 0 1 1 1 1 1 1 1 128/64 0FE0000–0FFFFFF 07F0000–07FFFFF

SA128 0 1 0 0 0 0 0 0 0 128/64 1000000–101FFFF 0800000–080FFFF

SA129 0 1 0 0 0 0 0 0 1 128/64 1020000–103FFFF 0810000–081FFFF

SA130 0 1 0 0 0 0 0 1 0 128/64 1040000–105FFFF 0820000–082FFFF

SA131 0 1 0 0 0 0 0 1 1 128/64 1060000–017FFFF 0830000–083FFFF

SA132 0 1 0 0 0 0 1 0 0 128/64 1080000–109FFFF 0840000–084FFFF

SA133 0 1 0 0 0 0 1 0 1 128/64 10A0000–10BFFFF 0850000–085FFFF

SA134 0 1 0 0 0 0 1 1 0 128/64 10C0000–10DFFFF 0860000–086FFFF

SA135 0 1 0 0 0 0 1 1 1 128/64 10E0000–10FFFFF 0870000–087FFFF

SA136 0 1 0 0 0 1 0 0 0 128/64 1100000–111FFFF 0880000–088FFFF

SA137 0 1 0 0 0 1 0 0 1 128/64 1120000–113FFFF 0890000–089FFFF

SA138 0 1 0 0 0 1 0 1 0 128/64 1140000–115FFFF 08A0000–08AFFFF

SA139 0 1 0 0 0 1 0 1 1 128/64 1160000–117FFFF 08B0000–08BFFFF

SA140 0 1 0 0 0 1 1 0 0 128/64 1180000–119FFFF 08C0000–08CFFFF

SA141 0 1 0 0 0 1 1 0 1 128/64 11A0000–11BFFFF 08D0000–08DFFFF

SA142 0 1 0 0 0 1 1 1 0 128/64 11C0000–11DFFFF 08E0000–08EFFFF

SA143 0 1 0 0 0 1 1 1 1 128/64 11E0000–11FFFFF 08F0000–08FFFFF

SA144 0 1 0 0 1 0 0 0 0 128/64 1200000–121FFFF 0900000–090FFFF

SA145 0 1 0 0 1 0 0 0 1 128/64 1220000–123FFFF 0910000–091FFFF

SA146 0 1 0 0 1 0 0 1 0 128/64 1240000–125FFFF 0920000–092FFFF

SA147 0 1 0 0 1 0 0 1 1 128/64 1260000–127FFFF 0930000–093FFFF

SA148 0 1 0 0 1 0 1 0 0 128/64 1280000–129FFFF 0940000–094FFFF

22 S29GLxxxN MirrorBitTM Flash Family 27631A1 October 16, 2003


A d v a n c e I n f o r m a t i o n

Table 2. Sector Address Table–S29GL512N (Continued)

8-bit 16-bit
Sector Size
Address Range Address Range
(Kbytes/
Sector A24–A16 (in hexadecimal) (in hexadecimal)
Kwords)

SA149 0 1 0 0 1 0 1 0 1 128/64 12A0000–12BFFFF 0950000–095FFFF

SA150 0 1 0 0 1 0 1 1 0 128/64 12C0000–12DFFFF 0960000–096FFFF

SA151 0 1 0 0 1 0 1 1 1 128/64 12E0000–12FFFFF 0970000–097FFFF

SA152 0 1 0 0 1 1 0 0 0 128/64 1300000–131FFFF 0980000–098FFFF

SA153 0 1 0 0 1 1 0 0 1 128/64 1320000–133FFFF 0990000–099FFFF

SA154 0 1 0 0 1 1 0 1 0 128/64 1340000–135FFFF 09A0000–09AFFFF

SA155 0 1 0 0 1 1 0 1 1 128/64 1360000–137FFFF 09B0000–09BFFFF

SA156 0 1 0 0 1 1 1 0 0 128/64 1380000–139FFFF 09C0000–09CFFFF

SA157 0 1 0 0 1 1 1 0 1 128/64 13A0000–13BFFFF 09D0000–09DFFFF

SA158 0 1 0 0 1 1 1 1 0 128/64 13C0000–13DFFFF 09E0000–09EFFFF

SA159 0 1 0 0 1 1 1 1 1 128/64 13E0000–13FFFFF 09F0000–09FFFFF

SA160 0 1 0 1 0 0 0 0 0 128/64 1400000–141FFFF 0A00000–0A0FFFF

SA161 0 1 0 1 0 0 0 0 1 128/64 1420000–143FFFF 0A10000–0A1FFFF

SA162 0 1 0 1 0 0 0 1 0 128/64 1440000–145FFFF 0A20000–0A2FFFF

SA163 0 1 0 1 0 0 0 1 1 128/64 1460000–147FFFF 0A30000–0A3FFFF

SA164 0 1 0 1 0 0 1 0 0 128/64 1480000–149FFFF 0A40000–0A4FFFF

SA165 0 1 0 1 0 0 1 0 1 128/64 14A0000–14BFFFF 0A50000–0A5FFFF

SA166 0 1 0 1 0 0 1 1 0 128/64 14C0000–14DFFFF 0A60000–0A6FFFF

SA167 0 1 0 1 0 0 1 1 1 128/64 14E0000–14FFFFF 0A70000–0A7FFFF

SA168 0 1 0 1 0 1 0 0 0 128/64 1500000–151FFFF 0A80000–0A8FFFF

SA169 0 1 0 1 0 1 0 0 1 128/64 1520000–153FFFF 0A90000–0A9FFFF

SA170 0 1 0 1 0 1 0 1 0 128/64 1540000–155FFFF 0AA0000–0AAFFFF

SA171 0 1 0 1 0 1 0 1 1 128/64 1560000–157FFFF 0AB0000–0ABFFFF

SA172 0 1 0 1 0 1 1 0 0 128/64 1580000–159FFFF 0AC0000–0ACFFFF

SA173 0 1 0 1 0 1 1 0 1 128/64 15A0000–15BFFFF 0AD0000–0ADFFFF

SA174 0 1 0 1 0 1 1 1 0 128/64 15C0000–15DFFFF 0AE0000–0AEFFFF

SA175 0 1 0 1 0 1 1 1 1 128/64 15E0000–15FFFFF 0AF0000–0AFFFFF

SA176 0 1 0 1 1 0 0 0 0 128/64 160000–161FFFF 0B00000–0B0FFFF

SA177 0 1 0 1 1 0 0 0 1 128/64 1620000–163FFFF 0B10000–0B1FFFF

SA178 0 1 0 1 1 0 0 1 0 128/64 1640000–165FFFF 0B20000–0B2FFFF

SA179 0 1 0 1 1 0 0 1 1 128/64 1660000–167FFFF 0B30000–0B3FFFF

SA180 0 1 0 1 1 0 1 0 0 128/64 1680000–169FFFF 0B40000–0B4FFFF

SA181 0 1 0 1 1 0 1 0 1 128/64 16A0000–16BFFFF 0B50000–0B5FFFF

SA182 0 1 0 1 1 0 1 1 0 128/64 16C0000–16DFFFF 0B60000–0B6FFFF

SA183 0 1 0 1 1 0 1 1 1 128/64 16E0000–16FFFFF 0B70000–0B7FFFF

October 16, 2003 27631A1 S29GLxxxN MirrorBitTM Flash Family 23


A d v a n c e I n f o r m a t i o n

Table 2. Sector Address Table–S29GL512N (Continued)

8-bit 16-bit
Sector Size
Address Range Address Range
(Kbytes/
Sector A24–A16 (in hexadecimal) (in hexadecimal)
Kwords)

SA184 0 1 0 1 1 1 0 0 0 128/64 1700000–171FFFF 0B80000–0B8FFFF

SA185 0 1 0 1 1 1 0 0 1 128/64 1720000–173FFFF 0B90000–0B9FFFF

SA186 0 1 0 1 1 1 0 1 0 128/64 1740000–175FFFF 0BA0000–0BAFFFF

SA187 0 1 0 1 1 1 0 1 1 128/64 1760000–177FFFF 0BB0000–0BBFFFF

SA188 0 1 0 1 1 1 1 0 0 128/64 1780000–179FFFF 0BC0000–0BCFFFF

SA189 0 1 0 1 1 1 1 0 1 128/64 17A0000–17BFFFF 0BD0000–0BDFFFF

SA190 0 1 0 1 1 1 1 1 0 128/64 17C0000–17DFFFF 0BE0000–0BEFFFF

SA191 0 1 0 1 1 1 1 1 1 128/64 17E0000–17FFFFF 0BF0000–0BFFFFF

SA192 0 1 1 0 0 0 0 0 0 128/64 1800000–181FFFF 0C00000–0C0FFFF

SA193 0 1 1 0 0 0 0 0 1 128/64 1820000–183FFFF 0C10000–0C1FFFF

SA194 0 1 1 0 0 0 0 1 0 128/64 1840000–185FFFF 0C20000–0C2FFFF

SA195 0 1 1 0 0 0 0 1 1 128/64 1860000–187FFFF 0C30000–0C3FFFF

SA196 0 1 1 0 0 0 1 0 0 128/64 1880000–189FFFF 0C40000–0C4FFFF

SA197 0 1 1 0 0 0 1 0 1 128/64 18A0000–18BFFFF 0C50000–0C5FFFF

SA198 0 1 1 0 0 0 1 1 0 128/64 18C0000–18DFFFF 0C60000–0C6FFFF

SA199 0 1 1 0 0 0 1 1 1 128/64 18E0000–18FFFFF 0C70000–0C7FFFF

SA200 0 1 1 0 0 1 0 0 0 128/64 1900000–191FFFF 0C80000–0C8FFFF

SA201 0 1 1 0 0 1 0 0 1 128/64 1920000–193FFFF 0C90000–0C9FFFF

SA202 0 1 1 0 0 1 0 1 0 128/64 1940000–195FFFF 0CA0000–0CAFFFF

SA203 0 1 1 0 0 1 0 1 1 128/64 1960000–197FFFF 0CB0000–0CBFFFF

SA204 0 1 1 0 0 1 1 0 0 128/64 1980000–199FFFF 0CC0000–0CCFFFF

SA205 0 1 1 0 0 1 1 0 1 128/64 19A0000–19BFFFF 0CD0000–0CDFFFF

SA206 0 1 1 0 0 1 1 1 0 128/64 19C0000–19DFFFF 0CE0000–0CEFFFF

SA207 0 1 1 0 0 1 1 1 1 128/64 19E0000–19FFFFF 0CF0000–0CFFFFF

SA208 0 1 1 0 1 0 0 0 0 128/64 1A00000–1A1FFFF 0D00000–0D0FFFF

SA209 0 1 1 0 1 0 0 0 1 128/64 1A20000–1A3FFFF 0D10000–0D1FFFF

SA210 0 1 1 0 1 0 0 1 0 128/64 1A40000–1A5FFFF 0D20000–0D2FFFF

SA211 0 1 1 0 1 0 0 1 1 128/64 1A60000–1A7FFFF 0D30000–0D3FFFF

SA212 0 1 1 0 1 0 1 0 0 128/64 1A80000–1A9FFFF 0D40000–0D4FFFF

SA213 0 1 1 0 1 0 1 0 1 128/64 1AA0000–1ABFFFF 0D50000–0D5FFFF

SA214 0 1 1 0 1 0 1 1 0 128/64 1AC0000–1ADFFFF 0D60000–0D6FFFF

SA215 0 1 1 0 1 0 1 1 1 128/64 1AE0000–1AFFFFF 0D70000–0D7FFFF

SA216 0 1 1 0 1 1 0 0 0 128/64 1B00000–1B1FFFF 0D80000–0D8FFFF

SA217 0 1 1 0 1 1 0 0 1 128/64 1B20000–1B3FFFF 0D90000–0D9FFFF

SA218 0 1 1 0 1 1 0 1 0 128/64 1B40000–1B5FFFF 0DA0000–0DAFFFF

24 S29GLxxxN MirrorBitTM Flash Family 27631A1 October 16, 2003


A d v a n c e I n f o r m a t i o n

Table 2. Sector Address Table–S29GL512N (Continued)

8-bit 16-bit
Sector Size
Address Range Address Range
(Kbytes/
Sector A24–A16 (in hexadecimal) (in hexadecimal)
Kwords)

SA219 0 1 1 0 1 1 0 1 1 128/64 1B60000–1B7FFFF 0DB0000–0DBFFFF

SA220 0 1 1 0 1 1 1 0 0 128/64 1B80000–1B9FFFF 0DC0000–0DCFFFF

SA221 0 1 1 0 1 1 1 0 1 128/64 1BA0000–1BBFFFF 0DD0000–0DDFFFF

SA222 0 1 1 0 1 1 1 1 0 128/64 1BC0000–1BDFFFF 0DE0000–0DEFFFF

SA223 0 1 1 0 1 1 1 1 1 128/64 1BE0000–1BFFFFF 0DF0000–0DFFFFF

SA224 0 1 1 1 0 0 0 0 0 128/64 1C00000–1C1FFFF 0E00000–0E0FFFF

SA225 0 1 1 1 0 0 0 0 1 128/64 1C20000–1C3FFFF 0E10000–0E1FFFF

SA226 0 1 1 1 0 0 0 1 0 128/64 1C40000–1C5FFFF 0E20000–0E2FFFF

SA227 0 1 1 1 0 0 0 1 1 128/64 1C60000–1C7FFFF 0E30000–0E3FFFF

SA228 0 1 1 1 0 0 1 0 0 128/64 1C80000–1C9FFFF 0E40000–0E4FFFF

SA229 0 1 1 1 0 0 1 0 1 128/64 1CA0000–1CBFFFF 0E50000–0E5FFFF

SA230 0 1 1 1 0 0 1 1 0 128/64 1CC0000–1CDFFFF 0E60000–0E6FFFF

SA231 0 1 1 1 0 0 1 1 1 128/64 1CE0000–1CFFFFF 0E70000–0E7FFFF

SA232 0 1 1 1 0 1 0 0 0 128/64 1D00000–1D1FFFF 0E80000–0E8FFFF

SA233 0 1 1 1 0 1 0 0 1 128/64 1D20000–1D3FFFF 0E90000–0E9FFFF

SA234 0 1 1 1 0 1 0 1 0 128/64 1D40000–1D5FFFF 0EA0000–0EAFFFF

SA235 0 1 1 1 0 1 0 1 1 128/64 1D60000–1D7FFFF 0EB0000–0EBFFFF

SA236 0 1 1 1 0 1 1 0 0 128/64 1D80000–1D9FFFF 0EC0000–0ECFFFF

SA237 0 1 1 1 0 1 1 0 1 128/64 1DA0000–1DBFFFF 0ED0000–0EDFFFF

SA238 0 1 1 1 0 1 1 1 0 128/64 1DC0000–1DDFFFF 0EE0000–0EEFFFF

SA239 0 1 1 1 0 1 1 1 1 128/64 1DE0000–1DFFFFF 0EF0000–0EFFFFF

SA240 0 1 1 1 1 0 0 0 0 128/64 1E00000–1E1FFFF 0F00000–0F0FFFF

SA241 0 1 1 1 1 0 0 0 1 128/64 1E20000–1E3FFFF 0F10000–0F1FFFF

SA242 0 1 1 1 1 0 0 1 0 128/64 1E40000–1E5FFFF 0F20000–0F2FFFF

SA243 0 1 1 1 1 0 0 1 1 128/64 1E60000–1E7FFFF 0F30000–0F3FFFF

SA244 0 1 1 1 1 0 1 0 0 128/64 1E80000–1E9FFFF 0F40000–0F4FFFF

SA245 0 1 1 1 1 0 1 0 1 128/64 1EA0000–1EBFFFF 0F50000–0F5FFFF

SA246 0 1 1 1 1 0 1 1 0 128/64 1EC0000–1EDFFFF 0F60000–0F6FFFF

SA247 0 1 1 1 1 0 1 1 1 128/64 1EE0000–1EFFFFF 0F70000–0F7FFFF

SA248 0 1 1 1 1 1 0 0 0 128/64 1F00000–1F1FFFF 0F80000–0F8FFFF

SA249 0 1 1 1 1 1 0 0 1 128/64 1F20000–1F3FFFF 0F90000–0F9FFFF

SA250 0 1 1 1 1 1 0 1 0 128/64 1F40000–1F5FFFF 0FA0000–0FAFFFF

SA251 0 1 1 1 1 1 0 1 1 128/64 1F60000–1F7FFFF 0FB0000–0FBFFFF

SA252 0 1 1 1 1 1 1 0 0 128/64 1F80000–1F9FFFF 0FC0000–0FCFFFF

SA253 0 1 1 1 1 1 1 0 1 128/64 1FA0000–1FBFFFF 0FD0000–0FDFFFF

October 16, 2003 27631A1 S29GLxxxN MirrorBitTM Flash Family 25


A d v a n c e I n f o r m a t i o n

Table 2. Sector Address Table–S29GL512N (Continued)

8-bit 16-bit
Sector Size
Address Range Address Range
(Kbytes/
Sector A24–A16 (in hexadecimal) (in hexadecimal)
Kwords)

SA254 0 1 1 1 1 1 1 1 0 128/64 1FC0000–1FDFFFF 0FE0000–0FEFFFF

SA255 0 1 1 1 1 1 1 1 1 128/64 1FE0000–1FFFFFF 0FF0000–0FFFFFF

SA256 1 0 0 0 0 0 0 0 0 128/64 2000000–201FFFF 1000000–100FFFF

SA257 1 0 0 0 0 0 0 0 1 128/64 2020000–203FFFF 1010000–101FFFF

SA258 1 0 0 0 0 0 0 1 0 128/64 2040000–205FFFF 1020000–102FFFF

SA259 1 0 0 0 0 0 0 1 1 128/64 2060000–207FFFF 1030000–103FFFF

SA260 1 0 0 0 0 0 1 0 0 128/64 2080000–209FFFF 1040000–104FFFF

SA261 1 0 0 0 0 0 1 0 1 128/64 20A0000–20BFFFF 1050000–105FFFF

SA262 1 0 0 0 0 0 1 1 0 128/64 20C0000–20DFFFF 1060000–106FFFF

SA263 1 0 0 0 0 0 1 1 1 128/64 20E0000–20FFFFF 1070000–107FFFF

SA264 1 0 0 0 0 1 0 0 0 128/64 2100000–211FFFF 1080000–108FFFF

SA265 1 0 0 0 0 1 0 0 1 128/64 2120000–213FFFF 1090000–109FFFF

SA266 1 0 0 0 0 1 0 1 0 128/64 2140000–215FFFF 10A0000–10AFFFF

SA267 1 0 0 0 0 1 0 1 1 128/64 2160000–217FFFF 10B0000–10BFFFF

SA268 1 0 0 0 0 1 1 0 0 128/64 2180000–219FFFF 10C0000–10CFFFF

SA269 1 0 0 0 0 1 1 0 1 128/64 21A0000–21BFFFF 10D0000–10DFFFF

SA270 1 0 0 0 0 1 1 1 0 128/64 21C0000–21DFFFF 10E0000–10EFFFF

SA271 1 0 0 0 0 1 1 1 1 128/64 21E0000–21FFFFF 10F0000–10FFFFF

SA272 1 0 0 0 1 0 0 0 0 128/64 2200000–221FFFF 1100000–110FFFF

SA273 1 0 0 0 1 0 0 0 1 128/64 2220000–223FFFF 1110000–111FFFF

SA274 1 0 0 0 1 0 0 1 0 128/64 2240000–225FFFF 1120000–112FFFF

SA275 1 0 0 0 1 0 0 1 1 128/64 2260000–227FFFF 1130000–113FFFF

SA276 1 0 0 0 1 0 1 0 0 128/64 2280000–229FFFF 1140000–114FFFF

SA277 1 0 0 0 1 0 1 0 1 128/64 22A0000–22BFFFF 1150000–115FFFF

SA278 1 0 0 0 1 0 1 1 0 128/64 22C0000–22DFFFF 1160000–116FFFF

SA279 1 0 0 0 1 0 1 1 1 128/64 22E0000–22FFFFF 1170000–117FFFF

SA280 1 0 0 0 1 1 0 0 0 128/64 2300000–231FFFF 1180000–118FFFF

SA281 1 0 0 0 1 1 0 0 1 128/64 2320000–233FFFF 1190000–119FFFF

SA282 1 0 0 0 1 1 0 1 0 128/64 2340000–235FFFF 11A0000–11AFFFF

SA283 1 0 0 0 1 1 0 1 1 128/64 2360000–237FFFF 11B0000–11BFFFF

SA284 1 0 0 0 1 1 1 0 0 128/64 2380000–239FFFF 11C0000–11CFFFF

SA285 1 0 0 0 1 1 1 0 1 128/64 23A0000–23BFFFF 11D0000–11DFFFF

SA286 1 0 0 0 1 1 1 1 0 128/64 23C0000–23DFFFF 11E0000–11EFFFF

SA287 1 0 0 0 1 1 1 1 1 128/64 23E0000–23FFFFF 11F0000–11FFFFF

SA288 1 0 0 1 0 0 0 0 0 128/64 2400000–241FFFF 1200000–120FFFF

26 S29GLxxxN MirrorBitTM Flash Family 27631A1 October 16, 2003


A d v a n c e I n f o r m a t i o n

Table 2. Sector Address Table–S29GL512N (Continued)

8-bit 16-bit
Sector Size
Address Range Address Range
(Kbytes/
Sector A24–A16 (in hexadecimal) (in hexadecimal)
Kwords)

SA289 1 0 0 1 0 0 0 0 1 128/64 2420000–243FFFF 1210000–121FFFF

SA290 1 0 0 1 0 0 0 1 0 128/64 2440000–245FFFF 1220000–122FFFF

SA291 1 0 0 1 0 0 0 1 1 128/64 2460000–247FFFF 1230000–123FFFF

SA292 1 0 0 1 0 0 1 0 0 128/64 2480000–249FFFF 1240000–124FFFF

SA293 1 0 0 1 0 0 1 0 1 128/64 24A0000–24BFFFF 1250000–125FFFF

SA294 1 0 0 1 0 0 1 1 0 128/64 24C0000–24DFFFF 1260000–126FFFF

SA295 1 0 0 1 0 0 1 1 1 128/64 24E0000–24FFFFF 1270000–127FFFF

SA296 1 0 0 1 0 1 0 0 0 128/64 2500000–251FFFF 1280000–128FFFF

SA297 1 0 0 1 0 1 0 0 1 128/64 2520000–253FFFF 1290000–129FFFF

SA298 1 0 0 1 0 1 0 1 0 128/64 2540000–255FFFF 12A0000–12AFFFF

SA299 1 0 0 1 0 1 0 1 1 128/64 2560000–257FFFF 12B0000–12BFFFF

SA300 1 0 0 1 0 1 1 0 0 128/64 2580000–259FFFF 12C0000–12CFFFF

SA301 1 0 0 1 0 1 1 0 1 128/64 25A0000–25BFFFF 12D0000–12DFFFF

SA302 1 0 0 1 0 1 1 1 0 128/64 25C0000–25DFFFF 12E0000–12EFFFF

SA303 1 0 0 1 0 1 1 1 1 128/64 25E0000–25FFFFF 12F0000–12FFFFF

SA304 1 0 0 1 1 0 0 0 0 128/64 2600000–261FFFF 1300000–130FFFF

SA305 1 0 0 1 1 0 0 0 1 128/64 2620000–263FFFF 1310000–131FFFF

SA306 1 0 0 1 1 0 0 1 0 128/64 2640000–265FFFF 1320000–132FFFF

SA307 1 0 0 1 1 0 0 1 1 128/64 2660000–267FFFF 1330000–133FFFF

SA308 1 0 0 1 1 0 1 0 0 128/64 2680000–269FFFF 1340000–134FFFF

SA309 1 0 0 1 1 0 1 0 1 128/64 26A0000–26BFFFF 1350000–135FFFF

SA310 1 0 0 1 1 0 1 1 0 128/64 26C0000–26DFFFF 1360000–136FFFF

SA311 1 0 0 1 1 0 1 1 1 128/64 26E0000–26FFFFF 1370000–137FFFF

SA312 1 0 0 1 1 1 0 0 0 128/64 2700000–271FFFF 1380000–138FFFF

SA313 1 0 0 1 1 1 0 0 1 128/64 2720000–273FFFF 1390000–139FFFF

SA314 1 0 0 1 1 1 0 1 0 128/64 2740000–275FFFF 13A0000–13AFFFF

SA315 1 0 0 1 1 1 0 1 1 128/64 2760000–277FFFF 13B0000–13BFFFF

SA316 1 0 0 1 1 1 1 0 0 128/64 2780000–279FFFF 13C0000–13CFFFF

SA317 1 0 0 1 1 1 1 0 1 128/64 27A0000–27BFFFF 13D0000–13DFFFF

SA318 1 0 0 1 1 1 1 1 0 128/64 27C0000–27DFFFF 13E0000–13EFFFF

SA319 1 0 0 1 1 1 1 1 1 128/64 27E0000–27FFFFF 13F0000–13FFFFF

SA320 1 0 1 0 0 0 0 0 0 128/64 2800000–281FFFF 1400000–140FFFF

SA321 1 0 1 0 0 0 0 0 1 128/64 2820000–283FFFF 1410000–141FFFF

SA322 1 0 1 0 0 0 0 1 0 128/64 2840000–285FFFF 1420000–142FFFF

SA323 1 0 1 0 0 0 0 1 1 128/64 2860000–287FFFF 1430000–143FFFF

October 16, 2003 27631A1 S29GLxxxN MirrorBitTM Flash Family 27


A d v a n c e I n f o r m a t i o n

Table 2. Sector Address Table–S29GL512N (Continued)

8-bit 16-bit
Sector Size
Address Range Address Range
(Kbytes/
Sector A24–A16 (in hexadecimal) (in hexadecimal)
Kwords)

SA324 1 0 1 0 0 0 1 0 0 128/64 2880000–289FFFF 1440000–144FFFF

SA325 1 0 1 0 0 0 1 0 1 128/64 28A0000–28BFFFF 1450000–145FFFF

SA326 1 0 1 0 0 0 1 1 0 128/64 28C0000–28DFFFF 1460000–146FFFF

SA327 1 0 1 0 0 0 1 1 1 128/64 28E0000–28FFFFF 1470000–147FFFF

SA328 1 0 1 0 0 1 0 0 0 128/64 2900000–291FFFF 1480000–148FFFF

SA329 1 0 1 0 0 1 0 0 1 128/64 2920000–293FFFF 1490000–149FFFF

SA330 1 0 1 0 0 1 0 1 0 128/64 2940000–295FFFF 14A0000–14AFFFF

SA331 1 0 1 0 0 1 0 1 1 128/64 2960000–297FFFF 14B0000–14BFFFF

SA332 1 0 1 0 0 1 1 0 0 128/64 2980000–299FFFF 14C0000–14CFFFF

SA333 1 0 1 0 0 1 1 0 1 128/64 29A0000–29BFFFF 14D0000–14DFFFF

SA334 1 0 1 0 0 1 1 1 0 128/64 29C0000–29DFFFF 14E0000–14EFFFF

SA335 1 0 1 0 0 1 1 1 1 128/64 29E0000–29FFFFF 14F0000–14FFFFF

SA336 1 0 1 0 1 0 0 0 0 128/64 2A00000–2A1FFFF 1500000–150FFFF

SA337 1 0 1 0 1 0 0 0 1 128/64 2A20000–2A3FFFF 1510000–151FFFF

SA338 1 0 1 0 1 0 0 1 0 128/64 2A40000–2A5FFFF 1520000–152FFFF

SA339 1 0 1 0 1 0 0 1 1 128/64 2A60000–2A7FFFF 1530000–153FFFF

SA340 1 0 1 0 1 0 1 0 0 128/64 2A80000–2A9FFFF 1540000–154FFFF

SA341 1 0 1 0 1 0 1 0 1 128/64 2AA0000–2ABFFFF 1550000–155FFFF

SA342 1 0 1 0 1 0 1 1 0 128/64 2AC0000–2ADFFFF 1560000–156FFFF

SA343 1 0 1 0 1 0 1 1 1 128/64 2AE00000–2EFFFFF 1570000–157FFFF

SA344 1 0 1 0 1 1 0 0 0 128/64 2B00000–2B1FFFF 1580000–158FFFF

SA345 1 0 1 0 1 1 0 0 1 128/64 2B20000–2B3FFFF 1590000–159FFFF

SA346 1 0 1 0 1 1 0 1 0 128/64 2B40000–2B5FFFF 15A0000–15AFFFF

SA347 1 0 1 0 1 1 0 1 1 128/64 2B60000–2B7FFFF 15B0000–15BFFFF

SA348 1 0 1 0 1 1 1 0 0 128/64 2B80000–2B9FFFF 15C0000–15CFFFF

SA349 1 0 1 0 1 1 1 0 1 128/64 2BA0000–2BBFFFF 15D0000–15DFFFF

SA350 1 0 1 0 1 1 1 1 0 128/64 2BC0000–2DFFFFF 15E0000–15EFFFF

SA351 1 0 1 0 1 1 1 1 1 128/64 2BE0000–2BFFFFF 15F0000–15FFFFF

SA352 1 0 1 1 0 0 0 0 0 128/64 2C00000–2C1FFFF 1600000–160FFFF

SA353 1 0 1 1 0 0 0 0 1 128/64 2C20000–2C3FFFF 1610000–161FFFF

SA354 1 0 1 1 0 0 0 1 0 128/64 2C40000–2C5FFFF 1620000–162FFFF

SA355 1 0 1 1 0 0 0 1 1 128/64 2C60000–2C7FFFF 1630000–163FFFF

SA356 1 0 1 1 0 0 1 0 0 128/64 2C80000–2C9FFFF 1640000–164FFFF

SA357 1 0 1 1 0 0 1 0 1 128/64 2CA0000–2CBFFFF 1650000–165FFFF

SA358 1 0 1 1 0 0 1 1 0 128/64 2CC0000–2CDFFFF 1660000–166FFFF

28 S29GLxxxN MirrorBitTM Flash Family 27631A1 October 16, 2003


A d v a n c e I n f o r m a t i o n

Table 2. Sector Address Table–S29GL512N (Continued)

8-bit 16-bit
Sector Size
Address Range Address Range
(Kbytes/
Sector A24–A16 (in hexadecimal) (in hexadecimal)
Kwords)

SA359 1 0 1 1 0 0 1 1 1 128/64 2CE0000–2CFFFFF 1670000–167FFFF

SA360 1 0 1 1 0 1 0 0 0 128/64 2D00000–2D1FFFF 1680000–168FFFF

SA361 1 0 1 1 0 1 0 0 1 128/64 2D20000–2D3FFFF 1690000–169FFFF

SA362 1 0 1 1 0 1 0 1 0 128/64 2D40000–2D5FFFF 16A0000–16AFFFF

SA363 1 0 1 1 0 1 0 1 1 128/64 2D60000–2D7FFFF 16B0000–16BFFFF

SA364 1 0 1 1 0 1 1 0 0 128/64 2D80000–2D9FFFF 16C0000–16CFFFF

SA365 1 0 1 1 0 1 1 0 1 128/64 2DA0000–2DBFFFF 16D0000–16DFFFF

SA366 1 0 1 1 0 1 1 1 0 128/64 2DC0000–2DDFFFF 16E0000–16EFFFF

SA367 1 0 1 1 0 1 1 1 1 128/64 2DE0000–2DFFFFF 16F0000–16FFFFF

SA368 1 0 1 1 1 0 0 0 0 128/64 2E00000–2E1FFFF 1700000–170FFFF

SA369 1 0 1 1 1 0 0 0 1 128/64 2E20000–2E3FFFF 1710000–171FFFF

SA370 1 0 1 1 1 0 0 1 0 128/64 2E40000–2E5FFFF 1720000–172FFFF

SA371 1 0 1 1 1 0 0 1 1 128/64 2E60000–2E7FFFF 1730000–173FFFF

SA372 1 0 1 1 1 0 1 0 0 128/64 2E80000–2E9FFFF 1740000–174FFFF

SA373 1 0 1 1 1 0 1 0 1 128/64 2EA0000–2EBFFFF 1750000–175FFFF

SA374 1 0 1 1 1 0 1 1 0 128/64 2EC0000–2EDFFFF 1760000–176FFFF

SA375 1 0 1 1 1 0 1 1 1 128/64 2EE0000–2EFFFFF 1770000–177FFFF

SA376 1 0 1 1 1 1 0 0 0 128/64 2F00000–2F1FFFF 1780000–178FFFF

SA377 1 0 1 1 1 1 0 0 1 128/64 2F20000–2F3FFFF 1790000–179FFFF

SA378 1 0 1 1 1 1 0 1 0 128/64 2F40000–2F5FFFF 17A0000–17AFFFF

SA379 1 0 1 1 1 1 0 1 1 128/64 2F60000–2F7FFFF 17B0000–17BFFFF

SA380 1 0 1 1 1 1 1 0 0 128/64 2F80000–2F9FFFF 17C0000–17CFFFF

SA381 1 0 1 1 1 1 1 0 1 128/64 2FA0000–2FBFFFF 17D0000–17DFFFF

SA382 1 0 1 1 1 1 1 1 0 128/64 2FC0000–2FDFFFF 17E0000–17EFFFF

SA383 1 0 1 1 1 1 1 1 1 128/64 3FE0000–3FFFFFF 17F0000–17FFFFF

SA384 1 1 0 0 0 0 0 0 0 128/64 3000000–301FFFF 1800000–180FFFF

SA385 1 1 0 0 0 0 0 0 1 128/64 3020000–303FFFF 1810000–181FFFF

SA386 1 1 0 0 0 0 0 1 0 128/64 3040000–305FFFF 1820000–182FFFF

SA387 1 1 0 0 0 0 0 1 1 128/64 3060000–307FFFF 1830000–183FFFF

SA388 1 1 0 0 0 0 1 0 0 128/64 3080000–309FFFF 1840000–184FFFF

SA389 1 1 0 0 0 0 1 0 1 128/64 30A0000–30BFFFF 1850000–185FFFF

SA390 1 1 0 0 0 0 1 1 0 128/64 30C0000–30DFFFF 1860000–186FFFF

SA391 1 1 0 0 0 0 1 1 1 128/64 30E0000–30FFFFF 1870000–187FFFF

SA392 1 1 0 0 0 1 0 0 0 128/64 3100000–311FFFF 1880000–188FFFF

SA393 1 1 0 0 0 1 0 0 1 128/64 3120000–313FFFF 1890000–189FFFF

October 16, 2003 27631A1 S29GLxxxN MirrorBitTM Flash Family 29


A d v a n c e I n f o r m a t i o n

Table 2. Sector Address Table–S29GL512N (Continued)

8-bit 16-bit
Sector Size
Address Range Address Range
(Kbytes/
Sector A24–A16 (in hexadecimal) (in hexadecimal)
Kwords)

SA394 1 1 0 0 0 1 0 1 0 128/64 3140000–315FFFF 18A0000–18AFFFF

SA395 1 1 0 0 0 1 0 1 1 128/64 3160000–317FFFF 18B0000–18BFFFF

SA396 1 1 0 0 0 1 1 0 0 128/64 3180000–319FFFF 18C0000–18CFFFF

SA397 1 1 0 0 0 1 1 0 1 128/64 31A0000–31BFFFF 18D0000–18DFFFF

SA398 1 1 0 0 0 1 1 1 0 128/64 31C0000–31DFFFF 18E0000–18EFFFF

SA399 1 1 0 0 0 1 1 1 1 128/64 31E0000–31FFFFF 18F0000–18FFFFF

SA400 1 1 0 0 1 0 0 0 0 128/64 3200000–321FFFF 1900000–190FFFF

SA401 1 1 0 0 1 0 0 0 1 128/64 3220000–323FFFF 1910000–191FFFF

SA402 1 1 0 0 1 0 0 1 0 128/64 3240000–325FFFF 1920000–192FFFF

SA403 1 1 0 0 1 0 0 1 1 128/64 3260000–327FFFF 1930000–193FFFF

SA404 1 1 0 0 1 0 1 0 0 128/64 3280000–329FFFF 1940000–194FFFF

SA405 1 1 0 0 1 0 1 0 1 128/64 32A0000–32BFFFF 1950000–195FFFF

SA406 1 1 0 0 1 0 1 1 0 128/64 32C0000–32DFFFF 1960000–196FFFF

SA407 1 1 0 0 1 0 1 1 1 128/64 32E0000–32FFFFF 1970000–197FFFF

SA408 1 1 0 0 1 1 0 0 0 128/64 3300000–331FFFF 1980000–198FFFF

SA409 1 1 0 0 1 1 0 0 1 128/64 3320000–333FFFF 1990000–199FFFF

SA410 1 1 0 0 1 1 0 1 0 128/64 3340000–335FFFF 19A0000–19AFFFF

SA411 1 1 0 0 1 1 0 1 1 128/64 3360000–337FFFF 19B0000–19BFFFF

SA412 1 1 0 0 1 1 1 0 0 128/64 3380000–339FFFF 19C0000–19CFFFF

SA413 1 1 0 0 1 1 1 0 1 128/64 33A0000–33BFFFF 19D0000–19DFFFF

SA414 1 1 0 0 1 1 1 1 0 128/64 33C0000–33DFFFF 19E0000–19EFFFF

SA415 1 1 0 0 1 1 1 1 1 128/64 33E0000–33FFFFF 19F0000–19FFFFF

SA416 1 1 0 1 0 0 0 0 0 128/64 3400000–341FFFF 1A00000–1A0FFFF

SA417 1 1 0 1 0 0 0 0 1 128/64 3420000–343FFFF 1A10000–1A1FFFF

SA418 1 1 0 1 0 0 0 1 0 128/64 3440000–345FFFF 1A20000–1A2FFFF

SA419 1 1 0 1 0 0 0 1 1 128/64 3460000–347FFFF 1A30000–1A3FFFF

SA420 1 1 0 1 0 0 1 0 0 128/64 3480000–349FFFF 1A40000–1A4FFFF

SA421 1 1 0 1 0 0 1 0 1 128/64 34A0000–34BFFFF 1A50000–1A5FFFF

SA422 1 1 0 1 0 0 1 1 0 128/64 34C0000–34DFFFF 1A60000–1A6FFFF

SA423 1 1 0 1 0 0 1 1 1 128/64 34E0000–34FFFFF 1A70000–1A7FFFF

SA424 1 1 0 1 0 1 0 0 0 128/64 3500000–351FFFF 1A80000–1A8FFFF

SA425 1 1 0 1 0 1 0 0 1 128/64 3520000–353FFFF 1A90000–1A9FFFF

SA426 1 1 0 1 0 1 0 1 0 128/64 3540000–355FFFF 1AA0000–1AAFFFF

SA427 1 1 0 1 0 1 0 1 1 128/64 3560000–357FFFF 1AB0000–1ABFFFF

SA428 1 1 0 1 0 1 1 0 0 128/64 3580000–359FFFF 1AC0000–1ACFFFF

30 S29GLxxxN MirrorBitTM Flash Family 27631A1 October 16, 2003


A d v a n c e I n f o r m a t i o n

Table 2. Sector Address Table–S29GL512N (Continued)

8-bit 16-bit
Sector Size
Address Range Address Range
(Kbytes/
Sector A24–A16 (in hexadecimal) (in hexadecimal)
Kwords)

SA429 1 1 0 1 0 1 1 0 1 128/64 35A0000–35BFFFF 1AD0000–1ADFFFF

SA430 1 1 0 1 0 1 1 1 0 128/64 35C0000–35DFFFF 1AE0000–1AEFFFF

SA431 1 1 0 1 0 1 1 1 1 128/64 35E0000–35FFFFF 1AF0000–1AFFFFF

SA432 1 1 0 1 1 0 0 0 0 128/64 3600000–361FFFF 1B00000–1B0FFFF

SA433 1 1 0 1 1 0 0 0 1 128/64 3620000–363FFFF 1B10000–1B1FFFF

SA434 1 1 0 1 1 0 0 1 0 128/64 3640000–365FFFF 1B20000–1B2FFFF

SA435 1 1 0 1 1 0 0 1 1 128/64 3660000–367FFFF 1B30000–1B3FFFF

SA436 1 1 0 1 1 0 1 0 0 128/64 3680000–369FFFF 1B40000–1B4FFFF

SA437 1 1 0 1 1 0 1 0 1 128/64 36A0000–36BFFFF 1B50000–1B5FFFF

SA438 1 1 0 1 1 0 1 1 0 128/64 36C0000–36DFFFF 1B60000–1B6FFFF

SA439 1 1 0 1 1 0 1 1 1 128/64 36E0000–36FFFFF 1B70000–1B7FFFF

SA440 1 1 0 1 1 1 0 0 0 128/64 3700000–371FFFF 1B80000–1B8FFFF

SA441 1 1 0 1 1 1 0 0 1 128/64 3720000–373FFFF 1B90000–1B9FFFF

SA442 1 1 0 1 1 1 0 1 0 128/64 3740000–375FFFF 1BA0000–1BAFFFF

SA443 1 1 0 1 1 1 0 1 1 128/64 3760000–377FFFF 1BB0000–1BBFFFF

SA444 1 1 0 1 1 1 1 0 0 128/64 3780000–379FFFF 1BC0000–1BCFFFF

SA445 1 1 0 1 1 1 1 0 1 128/64 37A0000–37BFFFF 1BD0000–1BDFFFF

SA446 1 1 0 1 1 1 1 1 0 128/64 37C0000–37DFFFF 1BE0000–1BEFFFF

SA447 1 1 0 1 1 1 1 1 1 128/64 37E0000–37FFFFF 1BF0000–1BFFFFF

SA448 1 1 1 0 0 0 0 0 0 128/64 3800000–381FFFF 1C00000–1C0FFFF

SA449 1 1 1 0 0 0 0 0 1 128/64 3820000–383FFFF 1C10000–1C1FFFF

SA450 1 1 1 0 0 0 0 1 0 128/64 3840000–385FFFF 1C20000–1C2FFFF

SA451 1 1 1 0 0 0 0 1 1 128/64 3860000–387FFFF 1C30000–1C3FFFF

SA452 1 1 1 0 0 0 1 0 0 128/64 3880000–389FFFF 1C40000–1C4FFFF

SA453 1 1 1 0 0 0 1 0 1 128/64 38A0000–38BFFFF 1C50000–1C5FFFF

SA454 1 1 1 0 0 0 1 1 0 128/64 38C0000–38DFFFF 1C60000–1C6FFFF

SA455 1 1 1 0 0 0 1 1 1 128/64 38E0000–38FFFFF 1C70000–1C7FFFF

SA456 1 1 1 0 0 1 0 0 0 128/64 3900000–391FFFF 1C80000–1C8FFFF

SA457 1 1 1 0 0 1 0 0 1 128/64 3920000–393FFFF 1C90000–1C9FFFF

SA458 1 1 1 0 0 1 0 1 0 128/64 3940000–395FFFF 1CA0000–1CAFFFF

SA459 1 1 1 0 0 1 0 1 1 128/64 3960000–397FFFF 1CB0000–1CBFFFF

SA460 1 1 1 0 0 1 1 0 0 128/64 3980000–399FFFF 1CC0000–1CCFFFF

SA461 1 1 1 0 0 1 1 0 1 128/64 39A0000–39BFFFF 1CD0000–1CDFFFF

SA462 1 1 1 0 0 1 1 1 0 128/64 39C0000–39DFFFF 1CE0000–1CEFFFF

SA463 1 1 1 0 0 1 1 1 1 128/64 39E0000–39FFFFF 1CF0000–1CFFFFF

October 16, 2003 27631A1 S29GLxxxN MirrorBitTM Flash Family 31


A d v a n c e I n f o r m a t i o n

Table 2. Sector Address Table–S29GL512N (Continued)

8-bit 16-bit
Sector Size
Address Range Address Range
(Kbytes/
Sector A24–A16 (in hexadecimal) (in hexadecimal)
Kwords)

SA464 1 1 1 0 1 0 0 0 0 128/64 3A00000–3A1FFFF 1D00000–1D0FFFF

SA465 1 1 1 0 1 0 0 0 1 128/64 3A20000–3A3FFFF 1D10000–1D1FFFF

SA466 1 1 1 0 1 0 0 1 0 128/64 3A40000–3A5FFFF 1D20000–1D2FFFF

SA467 1 1 1 0 1 0 0 1 1 128/64 3A60000–3A7FFFF 1D30000–1D3FFFF

SA468 1 1 1 0 1 0 1 0 0 128/64 3A80000–3A9FFFF 1D40000–1D4FFFF

SA469 1 1 1 0 1 0 1 0 1 128/64 3AA0000–3ABFFFF 1D50000–1D5FFFF

SA470 1 1 1 0 1 0 1 1 0 128/64 3AC0000–3ADFFFF 1D60000–1D6FFFF

SA471 1 1 1 0 1 0 1 1 1 128/64 3AE0000–3AFFFFF 1D70000–1D7FFFF

SA472 1 1 1 0 1 1 0 0 0 128/64 3B00000–3B1FFFF 1D80000–1D8FFFF

SA473 1 1 1 0 1 1 0 0 1 128/64 3B20000–3B3FFFF 1D90000–1D9FFFF

SA474 1 1 1 0 1 1 0 1 0 128/64 3B40000–3B5FFFF 1DA0000–1DAFFFF

SA475 1 1 1 0 1 1 0 1 1 128/64 3B60000–3B7FFFF 1DB0000–1DBFFFF

SA476 1 1 1 0 1 1 1 0 0 128/64 3B80000–3B9FFFF 1DC0000–1DCFFFF

SA477 1 1 1 0 1 1 1 0 1 128/64 3BA0000–3BBFFFF 1DD0000–1DDFFFF

SA478 1 1 1 0 1 1 1 1 0 128/64 3BC0000–3BDFFFF 1DE0000–1DEFFFF

SA479 1 1 1 0 1 1 1 1 1 128/64 3BE0000–3BFFFFF 1DF0000–1DFFFFF

SA480 1 1 1 1 0 0 0 0 0 128/64 3C00000–3C1FFFF 1E00000–1E0FFFF

SA481 1 1 1 1 0 0 0 0 1 128/64 3C20000–3C3FFFF 1E10000–1E1FFFF

SA482 1 1 1 1 0 0 0 1 0 128/64 3C40000–3C5FFFF 1E20000–1E2FFFF

SA483 1 1 1 1 0 0 0 1 1 128/64 3C60000–3C7FFFF 1E30000–1E3FFFF

SA484 1 1 1 1 0 0 1 0 0 128/64 3C80000–3C9FFFF 1E40000–1E4FFFF

SA485 1 1 1 1 0 0 1 0 1 128/64 3CA0000–3CBFFFF 1E50000–1E5FFFF

SA486 1 1 1 1 0 0 1 1 0 128/64 3CC0000–3CDFFFF 1E60000–1E6FFFF

SA487 1 1 1 1 0 0 1 1 1 128/64 3CE0000–3CFFFFF 1E70000–1E7FFFF

SA488 1 1 1 1 0 1 0 0 0 128/64 3D00000–3D1FFFFF 1E80000–1E8FFFF

SA489 1 1 1 1 0 1 0 0 1 128/64 3D20000–3D3FFFF 1E90000–1E9FFFF

SA490 1 1 1 1 0 1 0 1 0 128/64 3D40000–3D5FFFF 1EA0000–1EAFFFF

SA491 1 1 1 1 0 1 0 1 1 128/64 3D60000–3D7FFFF 1EB0000–1EBFFFF

SA492 1 1 1 1 0 1 1 0 0 128/64 3D80000–3D9FFFF 1EC0000–1ECFFFF

SA493 1 1 1 1 0 1 1 0 1 128/64 3DA0000–3DBFFFF 1ED0000–1EDFFFF

SA494 1 1 1 1 0 1 1 1 0 128/64 3DC0000–3DDFFFF 1EE0000–1EEFFFF

SA495 1 1 1 1 0 1 1 1 1 128/64 3DE0000–3DFFFFF 1EF0000–1EFFFFF

SA496 1 1 1 1 1 0 0 0 0 128/64 3E00000–3E1FFFF 1F00000–1F0FFFF

SA497 1 1 1 1 1 0 0 0 1 128/64 3E20000–3E3FFFF 1F10000–1F1FFFF

SA498 1 1 1 1 1 0 0 1 0 128/64 3E40000–3E5FFFF 1F20000–1F2FFFF

32 S29GLxxxN MirrorBitTM Flash Family 27631A1 October 16, 2003


A d v a n c e I n f o r m a t i o n

Table 2. Sector Address Table–S29GL512N (Continued)

8-bit 16-bit
Sector Size
Address Range Address Range
(Kbytes/
Sector A24–A16 (in hexadecimal) (in hexadecimal)
Kwords)

SA499 1 1 1 1 1 0 0 1 1 128/64 3E60000–3E7FFFF 1F30000–1F3FFFF

SA500 1 1 1 1 1 0 1 0 0 128/64 3E80000–3E9FFFF 1F40000–1F4FFFF

SA501 1 1 1 1 1 0 1 0 1 128/64 3EA0000–3EBFFFF 1F50000–1F5FFFF

SA502 1 1 1 1 1 0 1 1 0 128/64 3EC00000–3EDFFFF 1F60000–1F6FFFF

SA503 1 1 1 1 1 0 1 1 1 128/64 3EE0000–3EFFFFF 1F70000–1F7FFFF

SA504 1 1 1 1 1 1 0 0 0 128/64 3F00000–3F1FFFF 1F80000–1F8FFFF

SA505 1 1 1 1 1 1 0 0 1 128/64 3F20000–3F3FFFF 1F90000–1F9FFFF

SA506 1 1 1 1 1 1 0 1 0 128/64 3F40000–3F5FFFF 1FA0000–1FAFFFF

SA507 1 1 1 1 1 1 0 1 1 128/64 3F60000–3F7FFFF 1FB0000–1FBFFFF

SA508 1 1 1 1 1 1 1 0 0 128/64 3F80000–3F9FFFF 1FC0000–1FCFFFF

SA509 1 1 1 1 1 1 1 0 1 128/64 3FA0000–3FBFFFF 1FD0000–1FDFFFF

SA510 1 1 1 1 1 1 1 1 0 128/64 3FC0000–3FDFFFF 1FE0000–1FEFFFF

SA511 1 1 1 1 1 1 1 1 1 128/64 3FE0000–3FFFFFF 1FF0000–1FFFFFF

Table 3. Sector Address Table–S29GL256N

8-bit 16-bit
Sector Size
Address Range Address Range
(Kbytes/
Sector A23–A16 (in hexadecimal) (in hexadecimal)
Kwords)

SA0 0 0 0 0 0 0 0 0 128/64 0000000–001FFFF 0000000–000FFFF

SA1 0 0 0 0 0 0 0 1 128/64 0020000–003FFFF 0010000–001FFFF

SA2 0 0 0 0 0 0 1 0 128/64 0040000–005FFFF 0020000–002FFFF

SA3 0 0 0 0 0 0 1 1 128/64 0060000–007FFFF 0030000–003FFFF

SA4 0 0 0 0 0 1 0 0 128/64 0080000–009FFFF 0040000–004FFFF

SA5 0 0 0 0 0 1 0 1 128/64 00A0000–00BFFFF 0050000–005FFFF

SA6 0 0 0 0 0 1 1 0 128/64 00C0000–00DFFFF 0060000–006FFFF

SA7 0 0 0 0 0 1 1 1 128/64 00E0000–00FFFFF 0070000–007FFFF

SA8 0 0 0 0 1 0 0 0 128/64 0100000–011FFFF 0080000–008FFFF

SA9 0 0 0 0 1 0 0 1 128/64 0120000–013FFFF 0090000–009FFFF

SA10 0 0 0 0 1 0 1 0 128/64 0140000–015FFFF 00A0000–00AFFFF

SA11 0 0 0 0 1 0 1 1 128/64 0160000–017FFFF 00B0000–00BFFFF

SA12 0 0 0 0 1 1 0 0 128/64 0180000–019FFFF 00C0000–00CFFFF

SA13 0 0 0 0 1 1 0 1 128/64 01A0000–01BFFFF 00D0000–00DFFFF

SA14 0 0 0 0 1 1 1 0 128/64 01C0000–01DFFFF 00E0000–00EFFFF

SA15 0 0 0 0 1 1 1 1 128/64 01E0000–01FFFFF 00F0000–00FFFFF

SA16 0 0 0 1 0 0 0 0 128/64 0200000–021FFFF 0100000–010FFFF

October 16, 2003 27631A1 S29GLxxxN MirrorBitTM Flash Family 33


A d v a n c e I n f o r m a t i o n

Table 3. Sector Address Table–S29GL256N (Continued)

8-bit 16-bit
Sector Size
Address Range Address Range
(Kbytes/
Sector A23–A16 (in hexadecimal) (in hexadecimal)
Kwords)

SA17 0 0 0 1 0 0 0 1 128/64 0220000–023FFFF 0110000–011FFFF

SA18 0 0 0 1 0 0 1 0 128/64 0240000–025FFFF 0120000–012FFFF

SA19 0 0 0 1 0 0 1 1 128/64 0260000–027FFFF 0130000–013FFFF

SA20 0 0 0 1 0 1 0 0 128/64 0280000–029FFFF 0140000–014FFFF

SA21 0 0 0 1 0 1 0 1 128/64 02A0000–02BFFFF 0150000–015FFFF

SA22 0 0 0 1 0 1 1 0 128/64 02C0000–02DFFFF 0160000–016FFFF

SA23 0 0 0 1 0 1 1 1 128/64 02E0000–02FFFFF 0170000–017FFFF

SA24 0 0 0 1 1 0 0 0 128/64 0300000–031FFFF 0180000–018FFFF

SA25 0 0 0 1 1 0 0 1 128/64 0320000–033FFFF 0190000–019FFFF

SA26 0 0 0 1 1 0 1 0 128/64 0340000–035FFFF 01A0000–01AFFFF

SA27 0 0 0 1 1 0 1 1 128/64 0360000–037FFFF 01B0000–01BFFFF

SA28 0 0 0 1 1 1 0 0 128/64 0380000–039FFFF 01C0000–01CFFFF

SA29 0 0 0 1 1 1 0 1 128/64 03A0000–03BFFFF 01D0000–01DFFFF

SA30 0 0 0 1 1 1 1 0 128/64 03C0000–03DFFFF 01E0000–01EFFFF

SA31 0 0 0 1 1 1 1 1 128/64 03E0000–03FFFFF 01F0000–01FFFFF

SA32 0 0 1 0 0 0 0 0 128/64 0400000–041FFFF 0200000–020FFFF

SA33 0 0 1 0 0 0 0 1 128/64 0420000–043FFFF 0210000–021FFFF

SA34 0 0 1 0 0 0 1 0 128/64 0440000–045FFFF 0220000–022FFFF

SA35 0 0 1 0 0 0 1 1 128/64 0460000–047FFFF 0230000–023FFFF

SA36 0 0 1 0 0 1 0 0 128/64 0480000–049FFFF 0240000–024FFFF

SA37 0 0 1 0 0 1 0 1 128/64 04A0000–04BFFFF 0250000–025FFFF

SA38 0 0 1 0 0 1 1 0 128/64 04C0000–04DFFFF 0260000–026FFFF

SA39 0 0 1 0 0 1 1 1 128/64 04E0000–04FFFFF 0270000–027FFFF

SA40 0 0 1 0 1 0 0 0 128/64 0500000–051FFFF 0280000–028FFFF

SA41 0 0 1 0 1 0 0 1 128/64 0520000–053FFFF 0290000–029FFFF

SA42 0 0 1 0 1 0 1 0 128/64 0540000–055FFFF 02A0000–02AFFFF

SA43 0 0 1 0 1 0 1 1 128/64 0560000–057FFFF 02B0000–02BFFFF

SA44 0 0 1 0 1 1 0 0 128/64 0580000–059FFFF 02C0000–02CFFFF

SA45 0 0 1 0 1 1 0 1 128/64 05A0000–05BFFFF 02D0000–02DFFFF

SA46 0 0 1 0 1 1 1 0 128/64 05C0000–05DFFFF 02E0000–02EFFFF

SA47 0 0 1 0 1 1 1 1 128/64 05E0000–05FFFFF 02F0000–02FFFFF

SA48 0 0 1 1 0 0 0 0 128/64 0600000–061FFFF 0300000–030FFFF

SA49 0 0 1 1 0 0 0 1 128/64 0620000–063FFFF 0310000–031FFFF

SA50 0 0 1 1 0 0 1 0 128/64 0640000–065FFFF 0320000–032FFFF

SA51 0 0 1 1 0 0 1 1 128/64 0660000–067FFFF 0330000–033FFFF

34 S29GLxxxN MirrorBitTM Flash Family 27631A1 October 16, 2003


A d v a n c e I n f o r m a t i o n

Table 3. Sector Address Table–S29GL256N (Continued)

8-bit 16-bit
Sector Size
Address Range Address Range
(Kbytes/
Sector A23–A16 (in hexadecimal) (in hexadecimal)
Kwords)

SA52 0 0 1 1 0 1 0 0 128/64 0680000–069FFFF 0340000–034FFFF

SA53 0 0 1 1 0 1 0 1 128/64 06A0000–06BFFFF 0350000–035FFFF

SA54 0 0 1 1 0 1 1 0 128/64 06C0000–06DFFFF 0360000–036FFFF

SA55 0 0 1 1 0 1 1 1 128/64 06E0000–06FFFFF 0370000–037FFFF

SA56 0 0 1 1 1 0 0 0 128/64 0700000–071FFFF 0380000–038FFFF

SA57 0 0 1 1 1 0 0 1 128/64 0720000–073FFFF 0390000–039FFFF

SA58 0 0 1 1 1 0 1 0 128/64 0740000–075FFFF 03A0000–03AFFFF

SA59 0 0 1 1 1 0 1 1 128/64 0760000–077FFFF 03B0000–03BFFFF

SA60 0 0 1 1 1 1 0 0 128/64 0780000–079FFFF 03C0000–03CFFFF

SA61 0 0 1 1 1 1 0 1 128/64 07A0000–7BFFFF 03D0000–03DFFFF

SA62 0 0 1 1 1 1 1 0 128/64 07C0000–07DFFFF 03E0000–03EFFFF

SA63 0 0 1 1 1 1 1 1 128/64 07E0000–07FFFFF0 03F0000–03FFFFF

SA64 0 1 0 0 0 0 0 0 128/64 0800000–081FFFF 0400000–040FFFF

SA65 0 1 0 0 0 0 0 1 128/64 0820000–083FFFF 0410000–041FFFF

SA66 0 1 0 0 0 0 1 0 128/64 0840000–085FFFF 0420000–042FFFF

SA67 0 1 0 0 0 0 1 1 128/64 0860000–087FFFF 0430000–043FFFF

SA68 0 1 0 0 0 1 0 0 128/64 0880000–089FFFF 0440000–044FFFF

SA69 0 1 0 0 0 1 0 1 128/64 08A0000–08BFFFF 0450000–045FFFF

SA70 0 1 0 0 0 1 1 0 128/64 08C0000–08DFFFF 0460000–046FFFF

SA71 0 1 0 0 0 1 1 1 128/64 08E0000–08FFFFF 0470000–047FFFF

SA72 0 1 0 0 1 0 0 0 128/64 0900000–091FFFF 0480000–048FFFF

SA73 0 1 0 0 1 0 0 1 128/64 0920000–093FFFF 0490000–049FFFF

SA74 0 1 0 0 1 0 1 0 128/64 0940000–095FFFF 04A0000–04AFFFF

SA75 0 1 0 0 1 0 1 1 128/64 0960000–097FFFF 04B0000–04BFFFF

SA76 0 1 0 0 1 1 0 0 128/64 0980000–099FFFF 04C0000–04CFFFF

SA77 0 1 0 0 1 1 0 1 128/64 09A0000–09BFFFF 04D0000–04DFFFF

SA78 0 1 0 0 1 1 1 0 128/64 09C0000–09DFFFF 04E0000–04EFFFF

SA79 0 1 0 0 1 1 1 1 128/64 09E0000–09FFFFF 04F0000–04FFFFF

SA80 0 1 0 1 0 0 0 0 128/64 0A00000–0A1FFFF 0500000–050FFFF

SA81 0 1 0 1 0 0 0 1 128/64 0A20000–0A3FFFF 0510000–051FFFF

SA82 0 1 0 1 0 0 1 0 128/64 0A40000–045FFFF 0520000–052FFFF

SA83 0 1 0 1 0 0 1 1 128/64 0A60000–0A7FFFF 0530000–053FFFF

SA84 0 1 0 1 0 1 0 0 128/64 0A80000–0A9FFFF 0540000–054FFFF

SA85 0 1 0 1 0 1 0 1 128/64 0AA0000–0ABFFFF 0550000–055FFFF

SA86 0 1 0 1 0 1 1 0 128/64 0AC0000–0ADFFFF 0560000–056FFFF

October 16, 2003 27631A1 S29GLxxxN MirrorBitTM Flash Family 35


A d v a n c e I n f o r m a t i o n

Table 3. Sector Address Table–S29GL256N (Continued)

8-bit 16-bit
Sector Size
Address Range Address Range
(Kbytes/
Sector A23–A16 (in hexadecimal) (in hexadecimal)
Kwords)

SA87 0 1 0 1 0 1 1 1 128/64 0AE0000–AEFFFFF 0570000–057FFFF

SA88 0 1 0 1 1 0 0 0 128/64 0B00000–0B1FFFF 0580000–058FFFF

SA89 0 1 0 1 1 0 0 1 128/64 0B20000–0B3FFFF 0590000–059FFFF

SA90 0 1 0 1 1 0 1 0 128/64 0B40000–0B5FFFF 05A0000–05AFFFF

SA91 0 1 0 1 1 0 1 1 128/64 0B60000–0B7FFFF 05B0000–05BFFFF

SA92 0 1 0 1 1 1 0 0 128/64 0B80000–0B9FFFF 05C0000–05CFFFF

SA93 0 1 0 1 1 1 0 1 128/64 0BA0000–0BBFFFF 05D0000–05DFFFF

SA94 0 1 0 1 1 1 1 0 128/64 0BC0000–0BDFFFF 05E0000–05EFFFF

SA95 0 1 0 1 1 1 1 1 128/64 0BE0000–0BFFFFF 05F0000–05FFFFF

SA96 0 1 1 0 0 0 0 0 128/64 0C00000–0C1FFFF 0600000–060FFFF

SA97 0 1 1 0 0 0 0 1 128/64 0C20000–0C3FFFF 0610000–061FFFF

SA98 0 1 1 0 0 0 1 0 128/64 0C40000–0C5FFFF 0620000–062FFFF

SA99 0 1 1 0 0 0 1 1 128/64 0C60000–0C7FFFF 0630000–063FFFF

SA100 0 1 1 0 0 1 0 0 128/64 0C80000–0C9FFFF 0640000–064FFFF

SA101 0 1 1 0 0 1 0 1 128/64 0CA0000–0CBFFFF 0650000–065FFFF

SA102 0 1 1 0 0 1 1 0 128/64 0CC0000–0CDFFFF 0660000–066FFFF

SA103 0 1 1 0 0 1 1 1 128/64 0CE0000–0CFFFFF 0670000–067FFFF

SA104 0 1 1 0 1 0 0 0 128/64 0D00000–0D1FFFF 0680000–068FFFF

SA105 0 1 1 0 1 0 0 1 128/64 0D20000–0D3FFFF 0690000–069FFFF

SA106 0 1 1 0 1 0 1 0 128/64 0D40000–0D5FFFF 06A0000–06AFFFF

SA107 0 1 1 0 1 0 1 1 128/64 0D60000–0D7FFFF 06B0000–06BFFFF

SA108 0 1 1 0 1 1 0 0 128/64 0D80000–0D9FFFF 06C0000–06CFFFF

SA109 0 1 1 0 1 1 0 1 128/64 0DA0000–0DBFFFF 06D0000–06DFFFF

SA110 0 1 1 0 1 1 1 0 128/64 0DC0000–0DDFFFF 06E0000–06EFFFF

SA111 0 1 1 0 1 1 1 1 128/64 0DE0000–0DFFFFF 06F0000–06FFFFF

SA112 0 1 1 1 0 0 0 0 128/64 0E00000–0E1FFFF 0700000–070FFFF

SA113 0 1 1 1 0 0 0 1 128/64 0E20000–0E3FFFF 0710000–071FFFF

SA114 0 1 1 1 0 0 1 0 128/64 0E40000–0E5FFFF 0720000–072FFFF

SA115 0 1 1 1 0 0 1 1 128/64 0E60000–0E7FFFF 0730000–073FFFF

SA116 0 1 1 1 0 1 0 0 128/64 0E80000–0E9FFFF 0740000–074FFFF

SA117 0 1 1 1 0 1 0 1 128/64 0EA0000–0EBFFFF 0750000–075FFFF

SA118 0 1 1 1 0 1 1 0 128/64 0EC0000–0EDFFFF 0760000–076FFFF

SA119 0 1 1 1 0 1 1 1 128/64 0EE0000–0EFFFFF 0770000–077FFFF

SA120 0 1 1 1 1 0 0 0 128/64 0F00000–0F1FFFF 0780000–078FFFF

SA121 0 1 1 1 1 0 0 1 128/64 0F20000–0F3FFFF 0790000–079FFFF

36 S29GLxxxN MirrorBitTM Flash Family 27631A1 October 16, 2003


A d v a n c e I n f o r m a t i o n

Table 3. Sector Address Table–S29GL256N (Continued)

8-bit 16-bit
Sector Size
Address Range Address Range
(Kbytes/
Sector A23–A16 (in hexadecimal) (in hexadecimal)
Kwords)

SA122 0 1 1 1 1 0 1 0 128/64 0F40000–0F5FFFF 07A0000–07AFFFF

SA123 0 1 1 1 1 0 1 1 128/64 0F60000–0F7FFFF 07B0000–07BFFFF

SA124 0 1 1 1 1 1 0 0 128/64 0F80000–0F9FFFF 07C0000–07CFFFF

SA125 0 1 1 1 1 1 0 1 128/64 0FA0000–0FBFFFF 07D0000–07DFFFF

SA126 0 1 1 1 1 1 1 0 128/64 0FC0000–0FDFFFF 07E0000–07EFFFF

SA127 0 1 1 1 1 1 1 1 128/64 0FE0000–0FFFFFF 07F0000–07FFFFF

SA128 1 0 0 0 0 0 0 0 128/64 1000000–101FFFF 0800000–080FFFF

SA129 1 0 0 0 0 0 0 1 128/64 1020000–103FFFF 0810000–081FFFF

SA130 1 0 0 0 0 0 1 0 128/64 1040000–105FFFF 0820000–082FFFF

SA131 1 0 0 0 0 0 1 1 128/64 1060000–107FFFF 0830000–083FFFF

SA132 1 0 0 0 0 1 0 0 128/64 1080000–109FFFF 0840000–084FFFF

SA133 1 0 0 0 0 1 0 1 128/64 10A0000–10BFFFF 0850000–085FFFF

SA134 1 0 0 0 0 1 1 0 128/64 10C0000–10DFFFF 0860000–086FFFF

SA135 1 0 0 0 0 1 1 1 128/64 10E0000–10FFFFF 0870000–087FFFF

SA136 1 0 0 0 1 0 0 0 128/64 1100000–111FFFF 0880000–088FFFF

SA137 1 0 0 0 1 0 0 1 128/64 1120000–113FFFF 0890000–089FFFF

SA138 1 0 0 0 1 0 1 0 128/64 1140000–115FFFF 08A0000–08AFFFF

SA139 1 0 0 0 1 0 1 1 128/64 1160000–117FFFF 08B0000–08BFFFF

SA140 1 0 0 0 1 1 0 0 128/64 1180000–119FFFF 08C0000–08CFFFF

SA141 1 0 0 0 1 1 0 1 128/64 11A0000–11BFFFF 08D0000–08DFFFF

SA142 1 0 0 0 1 1 1 0 128/64 11C0000–11DFFFF 08E0000–08EFFFF

SA143 1 0 0 0 1 1 1 1 128/64 11E0000–11FFFFF 08F0000–08FFFFF

SA144 1 0 0 1 0 0 0 0 128/64 1200000–121FFFF 0900000–090FFFF

SA145 1 0 0 1 0 0 0 1 128/64 1220000–123FFFF 0910000–091FFFF

SA146 1 0 0 1 0 0 1 0 128/64 1240000–125FFFF 0920000–092FFFF

SA147 1 0 0 1 0 0 1 1 128/64 1260000–127FFFF 0930000–093FFFF

SA148 1 0 0 1 0 1 0 0 128/64 1280000–129FFFF 0940000–094FFFF

SA149 1 0 0 1 0 1 0 1 128/64 12A0000–12BFFFF 0950000–095FFFF

SA150 1 0 0 1 0 1 1 0 128/64 12C0000–12DFFFF 0960000–096FFFF

SA151 1 0 0 1 0 1 1 1 128/64 12E0000–12FFFFF 0970000–097FFFF

SA152 1 0 0 1 1 0 0 0 128/64 1300000–131FFFF 0980000–098FFFF

SA153 1 0 0 1 1 0 0 1 128/64 1320000–133FFFF 0990000–099FFFF

SA154 1 0 0 1 1 0 1 0 128/64 1340000–135FFFF 09A0000–09AFFFF

SA155 1 0 0 1 1 0 1 1 128/64 1360000–137FFFF 09B0000–09BFFFF

SA156 1 0 0 1 1 1 0 0 128/64 1380000–139FFFF 09C0000–09CFFFF

October 16, 2003 27631A1 S29GLxxxN MirrorBitTM Flash Family 37


A d v a n c e I n f o r m a t i o n

Table 3. Sector Address Table–S29GL256N (Continued)

8-bit 16-bit
Sector Size
Address Range Address Range
(Kbytes/
Sector A23–A16 (in hexadecimal) (in hexadecimal)
Kwords)

SA157 1 0 0 1 1 1 0 1 128/64 13A0000–13BFFFF 09D0000–09DFFFF

SA158 1 0 0 1 1 1 1 0 128/64 13C0000–13DFFFF 09E0000–09EFFFF

SA159 1 0 0 1 1 1 1 1 128/64 13E0000–13FFFFF 09F0000–09FFFFF

SA160 1 0 1 0 0 0 0 0 128/64 1400000–141FFFF 0A00000–0A0FFFF

SA161 1 0 1 0 0 0 0 1 128/64 1420000–143FFFF 0A10000–0A1FFFF

SA162 1 0 1 0 0 0 1 0 128/64 1440000–145FFFF 0A20000–0A2FFFF

SA163 1 0 1 0 0 0 1 1 128/64 1460000–147FFFF 0A30000–0A3FFFF

SA164 1 0 1 0 0 1 0 0 128/64 1480000–149FFFF 0A40000–0A4FFFF

SA165 1 0 1 0 0 1 0 1 128/64 14A0000–14BFFFF 0A50000–0A5FFFF

SA166 1 0 1 0 0 1 1 0 128/64 14C0000–14DFFFF 0A60000–0A6FFFF

SA167 1 0 1 0 0 1 1 1 128/64 14E0000–14FFFFF 0A70000–0A7FFFF

SA168 1 0 1 0 1 0 0 0 128/64 1500000–151FFFF 0A80000–0A8FFFF

SA169 1 0 1 0 1 0 0 1 128/64 1520000–153FFFF 0A90000–0A9FFFF

SA170 1 0 1 0 1 0 1 0 128/64 1540000–155FFFF 0AA0000–0AAFFFF

SA171 1 0 1 0 1 0 1 1 128/64 1560000–157FFFF 0AB0000–0ABFFFF

SA172 1 0 1 0 1 1 0 0 128/64 1580000–159FFFF 0AC0000–0ACFFFF

SA173 1 0 1 0 1 1 0 1 128/64 15A0000–15BFFFF 0AD0000–0ADFFFF

SA174 1 0 1 0 1 1 1 0 128/64 15C0000–15DFFFF 0AE0000–0AEFFFF

SA175 1 0 1 0 1 1 1 1 128/64 15E0000–15FFFFF 0AF0000–0AFFFFF

SA176 1 0 1 1 0 0 0 0 128/64 1600000–161FFFF 0B00000–0B0FFFF

SA177 1 0 1 1 0 0 0 1 128/64 1620000–163FFFF 0B10000–0B1FFFF

SA178 1 0 1 1 0 0 1 0 128/64 1640000–165FFFFF 0B20000–0B2FFFF

SA179 1 0 1 1 0 0 1 1 128/64 1660000–167FFFF 0B30000–0B3FFFF

SA180 1 0 1 1 0 1 0 0 128/64 1680000–169FFFF 0B40000–0B4FFFF

SA181 1 0 1 1 0 1 0 1 128/64 16A0000–16BFFFF 0B50000–0B5FFFF

SA182 1 0 1 1 0 1 1 0 128/64 16C0000–16DFFFF 0B60000–0B6FFFF

SA183 1 0 1 1 0 1 1 1 128/64 16E0000–16FFFFF 0B70000–0B7FFFF

SA184 1 0 1 1 1 0 0 0 128/64 1700000–171FFFF 0B80000–0B8FFFF

SA185 1 0 1 1 1 0 0 1 128/64 1720000–173FFFF 0B90000–0B9FFFF

SA186 1 0 1 1 1 0 1 0 128/64 1740000–175FFFF 0BA0000–0BAFFFF

SA187 1 0 1 1 1 0 1 1 128/64 1760000–177FFFF 0BB0000–0BBFFFF

SA188 1 0 1 1 1 1 0 0 128/64 1780000–179FFFF 0BC0000–0BCFFFF

SA189 1 0 1 1 1 1 0 1 128/64 17A0000–17BFFFF 0BD0000–0BDFFFF

SA190 1 0 1 1 1 1 1 0 128/64 17C0000–17DFFFF 0BE0000–0BEFFFF

SA191 1 0 1 1 1 1 1 1 128/64 17E0000–17FFFFF 0BF0000–0BFFFFF

38 S29GLxxxN MirrorBitTM Flash Family 27631A1 October 16, 2003


A d v a n c e I n f o r m a t i o n

Table 3. Sector Address Table–S29GL256N (Continued)

8-bit 16-bit
Sector Size
Address Range Address Range
(Kbytes/
Sector A23–A16 (in hexadecimal) (in hexadecimal)
Kwords)

SA192 1 1 0 0 0 0 0 0 128/64 1800000–181FFFF 0C00000–0C0FFFF

SA193 1 1 0 0 0 0 0 1 128/64 1820000–183FFFF 0C10000–0C1FFFF

SA194 1 1 0 0 0 0 1 0 128/64 1840000–185FFFF 0C20000–0C2FFFF

SA195 1 1 0 0 0 0 1 1 128/64 1860000–187FFFF 0C30000–0C3FFFF

SA196 1 1 0 0 0 1 0 0 128/64 1880000–189FFFF 0C40000–0C4FFFF

SA197 1 1 0 0 0 1 0 1 128/64 18A0000–18BFFFF 0C50000–0C5FFFF

SA198 1 1 0 0 0 1 1 0 128/64 18C0000–18DFFFF 0C60000–0C6FFFF

SA199 1 1 0 0 0 1 1 1 128/64 18E0000–18FFFFF 0C70000–0C7FFFF

SA200 1 1 0 0 1 0 0 0 128/64 1900000–191FFFF 0C80000–0C8FFFF

SA201 1 1 0 0 1 0 0 1 128/64 1920000–193FFFF 0C90000–0C9FFFF

SA202 1 1 0 0 1 0 1 0 128/64 1940000–195FFFF 0CA0000–0CAFFFF

SA203 1 1 0 0 1 0 1 1 128/64 1960000–197FFFF 0CB0000–0CBFFFF

SA204 1 1 0 0 1 1 0 0 128/64 1980000–199FFFF 0CC0000–0CCFFFF

SA205 1 1 0 0 1 1 0 1 128/64 19A0000–19BFFFF 0CD0000–0CDFFFF

SA206 1 1 0 0 1 1 1 0 128/64 19C0000–19DFFFF 0CE0000–0CEFFFF

SA207 1 1 0 0 1 1 1 1 128/64 19E0000–19FFFF 0CF0000–0CFFFFF

SA208 1 1 0 1 0 0 0 0 128/64 1A00000–1A1FFFF 0D00000–0D0FFFF

SA209 1 1 0 1 0 0 0 1 128/64 1A20000–1A3FFFF 0D10000–0D1FFFF

SA210 1 1 0 1 0 0 1 0 128/64 1A40000–1A5FFFF 0D20000–0D2FFFF

SA211 1 1 0 1 0 0 1 1 128/64 1A60000–1A7FFFF 0D30000–0D3FFFF

SA212 1 1 0 1 0 1 0 0 128/64 1A80000–1A9FFFF 0D40000–0D4FFFF

SA213 1 1 0 1 0 1 0 1 128/64 1AA0000–1ABFFFF 0D50000–0D5FFFF

SA214 1 1 0 1 0 1 1 0 128/64 1AC0000–1ADFFFF 0D60000–0D6FFFF

SA215 1 1 0 1 0 1 1 1 128/64 1AE0000–1AFFFFF 0D70000–0D7FFFF

SA216 1 1 0 1 1 0 0 0 128/64 1B00000–1B1FFFF 0D80000–0D8FFFF

SA217 1 1 0 1 1 0 0 1 128/64 1B20000–1B3FFFF 0D90000–0D9FFFF

SA218 1 1 0 1 1 0 1 0 128/64 1B40000–1B5FFFF 0DA0000–0DAFFFF

SA219 1 1 0 1 1 0 1 1 128/64 1B60000–1B7FFFF 0DB0000–0DBFFFF

SA220 1 1 0 1 1 1 0 0 128/64 1B80000–1B9FFFF 0DC0000–0DCFFFF

SA221 1 1 0 1 1 1 0 1 128/64 1BA0000–1BBFFFF 0DD0000–0DDFFFF

SA222 1 1 0 1 1 1 1 0 128/64 1BC0000–1BDFFFF 0DE0000–0DEFFFF

SA223 1 1 0 1 1 1 1 1 128/64 1BE0000–1BFFFFF 0DF0000–0DFFFFF

SA224 1 1 1 0 0 0 0 0 128/64 1C00000–1C1FFFF 0E00000–0E0FFFF

SA225 1 1 1 0 0 0 0 1 128/64 1C20000–1C3FFFF 0E10000–0E1FFFF

SA226 1 1 1 0 0 0 1 0 128/64 1C40000–1C5FFFF 0E20000–0E2FFFF

October 16, 2003 27631A1 S29GLxxxN MirrorBitTM Flash Family 39


A d v a n c e I n f o r m a t i o n

Table 3. Sector Address Table–S29GL256N (Continued)

8-bit 16-bit
Sector Size
Address Range Address Range
(Kbytes/
Sector A23–A16 (in hexadecimal) (in hexadecimal)
Kwords)

SA227 1 1 1 0 0 0 1 1 128/64 1C60000–1C7FFFF 0E30000–0E3FFFF

SA228 1 1 1 0 0 1 0 0 128/64 1C80000–1C9FFFF 0E40000–0E4FFFF

SA229 1 1 1 0 0 1 0 1 128/64 1CA0000–1CBFFFF 0E50000–0E5FFFF

SA230 1 1 1 0 0 1 1 0 128/64 1CC0000–1CDFFFF 0E60000–0E6FFFF

SA231 1 1 1 0 0 1 1 1 128/64 1CE0000–1CFFFFF 0E70000–0E7FFFF

SA232 1 1 1 0 1 0 0 0 128/64 1D00000–1D1FFFF 0E80000–0E8FFFF

SA233 1 1 1 0 1 0 0 1 128/64 1D20000–1D3FFFF 0E90000–0E9FFFF

SA234 1 1 1 0 1 0 1 0 128/64 1D40000–1D5FFFF 0EA0000–0EAFFFF

SA235 1 1 1 0 1 0 1 1 128/64 1D60000–1D7FFFF 0EB0000–0EBFFFF

SA236 1 1 1 0 1 1 0 0 128/64 1D80000–1D9FFFF 0EC0000–0ECFFFF

SA237 1 1 1 0 1 1 0 1 128/64 1DA0000–1DBFFFF 0ED0000–0EDFFFF

SA238 1 1 1 0 1 1 1 0 128/64 1DC0000–1DDFFFF 0EE0000–0EEFFFF

SA239 1 1 1 0 1 1 1 1 128/64 1DE0000–1DFFFFF 0EF0000–0EFFFFF

SA240 1 1 1 1 0 0 0 0 128/64 1E00000–1E1FFFF 0F00000–0F0FFFF

SA241 1 1 1 1 0 0 0 1 128/64 1E20000–1E3FFFF 0F10000–0F1FFFF

SA242 1 1 1 1 0 0 1 0 128/64 1E40000–1E5FFFF 0F20000–0F2FFFF

SA243 1 1 1 1 0 0 1 1 128/64 1E60000–137FFFF 0F30000–0F3FFFF

SA244 1 1 1 1 0 1 0 0 128/64 1E80000–1E9FFFF 0F40000–0F4FFFF

SA245 1 1 1 1 0 1 0 1 128/64 1EA0000–1EBFFFF 0F50000–0F5FFFF

SA246 1 1 1 1 0 1 1 0 128/64 1EC0000–1EDFFFF 0F60000–0F6FFFF

SA247 1 1 1 1 0 1 1 1 128/64 1EE0000–1EFFFFF 0F70000–0F7FFFF

SA248 1 1 1 1 1 0 0 0 128/64 1F00000–1F1FFFF 0F80000–0F8FFFF

SA249 1 1 1 1 1 0 0 1 128/64 1F20000–1F3FFFF 0F90000–0F9FFFF

SA250 1 1 1 1 1 0 1 0 128/64 1F40000–1F5FFFF 0FA0000–0FAFFFF

SA251 1 1 1 1 1 0 1 1 128/64 1F60000–1F7FFFF 0FB0000–0FBFFFF

SA252 1 1 1 1 1 1 0 0 128/64 1F80000–1F9FFFF 0FC0000–0FCFFFF

SA253 1 1 1 1 1 1 0 1 128/64 1FA0000–1FBFFFF 0FD0000–0FDFFFF

SA254 1 1 1 1 1 1 1 0 128/64 1FC0000–1FDFFFF 0FE0000–0FEFFFF

SA255 1 1 1 1 1 1 1 1 128/64 1FE0000–1FFFFFF 0FF0000–0FFFFFF

Table 4. Sector Address Table–S29GL128N

8-Bit 16-bit
Sector Size
Address Range Address Range
(Kbytes/
Sector A22–A16 (in hexadecimal) (in hexadecimal)
Kwords)

SA0 0 0 0 0 0 0 128/64 0000000–001FFFF 0000000–000FFFF

40 S29GLxxxN MirrorBitTM Flash Family 27631A1 October 16, 2003


A d v a n c e I n f o r m a t i o n

Table 4. Sector Address Table–S29GL128N (Continued)

8-Bit 16-bit
Sector Size
Address Range Address Range
(Kbytes/
Sector A22–A16 (in hexadecimal) (in hexadecimal)
Kwords)

SA1 0 0 0 0 0 1 128/64 0020000–003FFFF 0010000–001FFFF

SA2 0 0 0 0 1 0 128/64 0040000–005FFFF 0020000–002FFFF

SA3 0 0 0 0 1 1 128/64 0060000–007FFFF 0030000–003FFFF

SA4 0 0 0 1 0 0 128/64 0080000–009FFFF 0040000–004FFFF

SA5 0 0 0 1 0 1 128/64 00A0000–00BFFFF 0050000–005FFFF

SA6 0 0 0 1 1 0 128/64 00C0000–00DFFFF 0060000–006FFFF

SA7 0 0 0 1 1 1 128/64 00E0000–00FFFFF 0070000–007FFFF

SA8 0 0 1 0 0 0 128/64 0100000–011FFFF 0080000–008FFFF

SA9 0 0 1 0 0 1 128/64 0120000–013FFFF 0090000–009FFFF

SA10 0 0 1 0 1 0 128/64 0140000–015FFFF 00A0000–00AFFFF

SA11 0 0 1 0 1 1 128/64 0160000–017FFFF 00B0000–00BFFFF

SA12 0 0 1 1 0 0 128/64 0180000–019FFFF 00C0000–00CFFFF

SA13 0 0 1 1 0 1 128/64 01A0000–01BFFFF 00D0000–00DFFFF

SA14 0 0 1 1 1 0 128/64 01C0000–01DFFFF 00E0000–00EFFFF

SA15 0 0 1 1 1 1 128/64 01E0000–01FFFFF 00F0000–00FFFFF

SA16 0 1 0 0 0 0 128/64 0200000–021FFFF 0100000–010FFFF

SA17 0 1 0 0 0 1 128/64 0220000–023FFFF 0110000–011FFFF

SA18 0 1 0 0 1 0 128/64 0240000–025FFFF 0120000–012FFFF

SA19 0 1 0 0 1 1 128/64 0260000–027FFFF 0130000–013FFFF

SA20 0 1 0 1 0 0 128/64 0280000–029FFFF 0140000–014FFFF

SA21 0 1 0 1 0 1 128/64 02A0000–02BFFFF 0150000–015FFFF

SA22 0 1 0 1 1 0 128/64 02C0000–02DFFFF 0160000–016FFFF

SA23 0 1 0 1 1 1 128/64 02E0000–02FFFFF 0170000–017FFFF

SA24 0 1 1 0 0 0 128/64 0300000–031FFFF 0180000–018FFFF

SA25 0 1 1 0 0 1 128/64 0320000–033FFFF 0190000–019FFFF

SA26 0 1 1 0 1 0 128/64 0340000–035FFFF 01A0000–01AFFFF

SA27 0 1 1 0 1 1 128/64 0360000–037FFFF 01B0000–01BFFFF

SA28 0 1 1 1 0 0 128/64 0380000–039FFFF 01C0000–01CFFFF

SA29 0 1 1 1 0 1 128/64 03A0000–03BFFFF 01D0000–01DFFFF

SA30 0 1 1 1 1 0 128/64 03C0000–03DFFFF 01E0000–01EFFFF

SA31 0 1 1 1 1 1 128/64 03E0000–03FFFFF 01F0000–01FFFFF

SA32 1 0 0 0 0 0 128/64 0400000–041FFFF 0200000–020FFFF

SA33 1 0 0 0 0 1 128/64 0420000–043FFFF 0210000–021FFFF

SA34 1 0 0 0 1 0 128/64 0440000–045FFFF 0220000–022FFFF

SA35 1 0 0 0 1 1 128/64 0460000–047FFFF 0230000–023FFFF

October 16, 2003 27631A1 S29GLxxxN MirrorBitTM Flash Family 41


A d v a n c e I n f o r m a t i o n

Table 4. Sector Address Table–S29GL128N (Continued)

8-Bit 16-bit
Sector Size
Address Range Address Range
(Kbytes/
Sector A22–A16 (in hexadecimal) (in hexadecimal)
Kwords)

SA36 1 0 0 1 0 0 128/64 0480000–049FFFF 0240000–024FFFF

SA37 1 0 0 1 0 1 128/64 04A0000–04BFFFF 0250000–025FFFF

SA38 1 0 0 1 1 0 128/64 04C0000–04DFFFF 0260000–026FFFF

SA39 1 0 0 1 1 1 128/64 04E0000–04FFFFF 0270000–027FFFF

SA40 1 0 1 0 0 0 128/64 0500000–051FFFF 0280000–028FFFF

SA41 1 0 1 0 0 1 128/64 0520000–053FFFF 0290000–029FFFF

SA42 1 0 1 0 1 0 128/64 0540000–055FFFF 02A0000–02AFFFF

SA43 1 0 1 0 1 1 128/64 0560000–057FFFF 02B0000–02BFFFF

SA44 1 0 1 1 0 0 128/64 0580000–059FFFF 02C0000–02CFFFF

SA45 1 0 1 1 0 1 128/64 05A0000–05BFFFF 02D0000–02DFFFF

SA46 1 0 1 1 1 0 128/64 05C0000–05DFFFF 02E0000–02EFFFF

SA47 1 0 1 1 1 1 128/64 05E0000–05FFFFF 02F0000–02FFFFF

SA48 1 1 0 0 0 0 128/64 0600000–061FFFF 0300000–030FFFF

SA49 1 1 0 0 0 1 128/64 0620000–063FFFF 0310000–031FFFF

SA50 1 1 0 0 1 0 128/64 0640000–065FFFF 0320000–032FFFF

SA51 1 1 0 0 1 1 128/64 0660000–067FFFF 0330000–033FFFF

SA52 1 1 0 1 0 0 128/64 0680000–069FFFF 0340000–034FFFF

SA53 1 1 0 1 0 1 128/64 06A0000–06BFFFF 0350000–035FFFF

SA54 1 1 0 1 1 0 128/64 06C0000–06DFFFF 0360000–036FFFF

SA55 1 1 0 1 1 1 128/64 06E0000–06FFFFF 0370000–037FFFF

SA56 1 1 1 0 0 0 128/64 0700000–071FFFF 0380000–038FFFF

SA57 1 1 1 0 0 1 128/64 0720000–073FFFF 0390000–039FFFF

SA58 1 1 1 0 1 0 128/64 0740000–075FFFF 03A0000–03AFFFF

SA59 1 1 1 0 1 1 128/64 0760000–077FFFF 03B0000–03BFFFF

SA60 1 1 1 1 0 0 128/64 0780000–079FFFF 03C0000–03CFFFF

SA61 1 1 1 1 0 1 128/64 07A0000–07BFFFF 03D0000–03DFFFF

SA62 1 1 1 1 1 0 128/64 07C0000–07DFFFF 03E0000–03EFFFF

SA63 1 1 1 1 1 1 128/64 07E0000–07FFFFF 03F0000–03FFFFF

SA64 0 0 0 0 0 0 128/64 0800000–081FFFF 0400000–040FFFF

SA65 0 0 0 0 0 1 128/64 0820000–083FFFF 0410000–041FFFF

SA66 0 0 0 0 1 0 128/64 0840000–085FFFF 0420000–042FFFF

SA67 0 0 0 0 1 1 128/64 0860000–087FFFF 0430000–043FFFF

SA68 0 0 0 1 0 0 128/64 0880000–089FFFF 0440000–044FFFF

SA69 0 0 0 1 0 1 128/64 08A0000–08BFFFF 0450000–045FFFF

SA70 0 0 0 1 1 0 128/64 08C0000–08DFFFF 0460000–046FFFF

42 S29GLxxxN MirrorBitTM Flash Family 27631A1 October 16, 2003


A d v a n c e I n f o r m a t i o n

Table 4. Sector Address Table–S29GL128N (Continued)

8-Bit 16-bit
Sector Size
Address Range Address Range
(Kbytes/
Sector A22–A16 (in hexadecimal) (in hexadecimal)
Kwords)

SA71 0 0 0 1 1 1 128/64 08E0000–08FFFFF 0470000–047FFFF

SA72 0 0 1 0 0 0 128/64 0900000–091FFFF 0480000–048FFFF

SA73 0 0 1 0 0 1 128/64 0920000–093FFFF 0490000–049FFFF

SA74 0 0 1 0 1 0 128/64 0940000–095FFFF 04A0000–04AFFFF

SA75 0 0 1 0 1 1 128/64 0960000–097FFFF 04B0000–04BFFFF

SA76 0 0 1 1 0 0 128/64 0980000–099FFFF 04C0000–04CFFFF

SA77 0 0 1 1 0 1 128/64 09A0000–09BFFFF 04D0000–04DFFFF

SA78 0 0 1 1 1 0 128/64 09C0000–09DFFFF 04E0000–04EFFFF

SA79 0 0 1 1 1 1 128/64 09E0000–09FFFFF 04F0000–04FFFFF

SA80 0 1 0 0 0 0 128/64 0A00000–0A1FFFF 0500000–050FFFF

SA81 0 1 0 0 0 1 128/64 0A20000–0A3FFFF 0510000–051FFFF

SA82 0 1 0 0 1 0 128/64 0A40000–0A5FFFF 0520000–052FFFF

SA83 0 1 0 0 1 1 128/64 0A60000–0A7FFFF 0530000–053FFFF

SA84 0 1 0 1 0 0 128/64 0A80000–0A9FFFF 0540000–054FFFF

SA85 0 1 0 1 0 1 128/64 0AA0000–0ABFFFF 0550000–055FFFF

SA86 0 1 0 1 1 0 128/64 0AC0000–0ADFFFF 0560000–056FFFF

SA87 0 1 0 1 1 1 128/64 0AE0000–0AFFFFF 0570000–057FFFF

SA88 0 1 1 0 0 0 128/64 0B00000–0B1FFFF 0580000–058FFFF

SA89 0 1 1 0 0 1 128/64 0B20000–0B3FFFF 0590000–059FFFF

SA90 0 1 1 0 1 0 128/64 0B40000–0B5FFFF 05A0000–05AFFFF

SA91 0 1 1 0 1 1 128/64 0B60000–0B7FFFF 05B0000–05BFFFF

SA92 0 1 1 1 0 0 128/64 0B80000–0B9FFFF 05C0000–05CFFFF

SA93 0 1 1 1 0 1 128/64 0BA0000–0BBFFFF 05D0000–05DFFFF

SA94 0 1 1 1 1 0 128/64 0BC0000–0BDFFFF 05E0000–05EFFFF

SA95 0 1 1 1 1 1 128/64 0BE0000–0BFFFFF 05F0000–05FFFFF

SA96 1 0 0 0 0 0 128/64 0C00000–0C1FFFF 0600000–060FFFF

SA97 1 0 0 0 0 1 128/64 0C20000–0C3FFFF 0610000–061FFFF

SA98 1 0 0 0 1 0 128/64 0C40000–0C5FFFF 0620000–062FFFF

SA99 1 0 0 0 1 1 128/64 0C60000–0C7FFFF 0630000–063FFFF

SA100 1 0 0 1 0 0 128/64 0C80000–0C9FFFF 0640000–064FFFF

SA101 1 0 0 1 0 1 128/64 0CA0000–0CBFFFF 0650000–065FFFF

SA102 1 0 0 1 1 0 128/64 0CC0000–0CDFFFF 0660000–066FFFF

SA103 1 0 0 1 1 1 128/64 0CE0000–0CFFFFF 0670000–067FFFF

SA104 1 0 1 0 0 0 128/64 0D00000–0D1FFFF 0680000–068FFFF

SA105 1 0 1 0 0 1 128/64 0D20000–0D3FFFF 0690000–069FFFF

October 16, 2003 27631A1 S29GLxxxN MirrorBitTM Flash Family 43


A d v a n c e I n f o r m a t i o n

Table 4. Sector Address Table–S29GL128N (Continued)

8-Bit 16-bit
Sector Size
Address Range Address Range
(Kbytes/
Sector A22–A16 (in hexadecimal) (in hexadecimal)
Kwords)

SA106 1 0 1 0 1 0 128/64 0D40000–0D5FFFF 06A0000–06AFFFF

SA107 1 0 1 0 1 1 128/64 0D60000–0D7FFFF 06B0000–06BFFFF

SA108 1 0 1 1 0 0 128/64 0D80000–0D9FFFF 06C0000–06CFFFF

SA109 1 0 1 1 0 1 128/64 0DA0000–0DBFFFF 06D0000–06DFFFF

SA110 1 0 1 1 1 0 128/64 0DC0000–0DDFFFF 06E0000–06EFFFF

SA111 1 0 1 1 1 1 128/64 0DE0000–0DFFFFF 06F0000–06FFFFF

SA112 1 1 0 0 0 0 128/64 0E00000–0E1FFFF 0700000–070FFFF

SA113 1 1 0 0 0 1 128/64 0E20000–0E3FFFF 0710000–071FFFF

SA114 1 1 0 0 1 0 128/64 0E40000–0E5FFFF 0720000–072FFFF

SA115 1 1 0 0 1 1 128/64 0E60000–0E7FFFF 0730000–073FFFF

SA116 1 1 0 1 0 0 128/64 0E80000–0E9FFFF 0740000–074FFFF

SA117 1 1 0 1 0 1 128/64 0EA0000–0EBFFFF 0750000–075FFFF

SA118 1 1 0 1 1 0 128/64 0EC0000–0EDFFFF 0760000–076FFFF

SA119 1 1 0 1 1 1 128/64 0EE0000–0EFFFFF 0770000–077FFFF

SA120 1 1 1 0 0 0 128/64 0F00000–0F1FFFF 0780000–078FFFF

SA121 1 1 1 0 0 1 128/64 0F20000–0F3FFFF 0790000–079FFFF

SA122 1 1 1 0 1 0 128/64 0F40000–0F5FFFF 07A0000–07AFFFF

SA123 1 1 1 0 1 1 128/64 0F60000–0F7FFFF 07B0000–07BFFFF

SA124 1 1 1 1 0 0 128/64 0F80000–0F9FFFF 07C0000–07CFFFF

SA125 1 1 1 1 0 1 128/64 0FA0000–0FBFFFF 07D0000–07DFFFF

SA126 1 1 1 1 1 0 128/64 0FC0000–0FDFFFF 07E0000–07EFFFF

SA127 1 1 1 1 1 1 128/64 0FE0000–0FFFFFF 07F0000–07FFFFF

Autoselect Mode
The autoselect mode provides manufacturer and device identification, and sector
group protection verification, through identifier codes output on DQ7–DQ0. This
mode is primarily intended for programming equipment to automatically match a
device to be programmed with its corresponding programming algorithm. How-
ever, the autoselect codes can also be accessed in-system through the command
register.
When using programming equipment, the autoselect mode requires VID on ad-
dress pin A9. Address pins A6, A3, A2, A1, and A0 must be as shown in Table 5.
In addition, when verifying sector protection, the sector address must appear on
the appropriate highest order address bits (see Table 2). Table 5 shows the re-
maining address bits that are don’t care. When all necessary bits have been set
as required, the programming equipment may then read the corresponding iden-
tifier code on DQ7–DQ0.
To access the autoselect codes in-system, the host system can issue the autose-
lect command via the command register, as shown in Table 12 and Table 13. This

44 S29GLxxxN MirrorBitTM Flash Family 27631A1 October 16, 2003


A d v a n c e I n f o r m a t i o n

method does not require VID. Refer to the Autoselect Command Sequence section
for more information.

Table 5. Autoselect Codes, (High Voltage Method)


DQ8 to DQ15
A22 A14 A8 A5 A3
WE
Description CE# OE# to to A9 to A6 to to A1 A0 DQ7 to DQ0
# BYTE#= BYTE#
A15 A10 A7 A4 A2
VIH = VIL

Manufacturer ID: AMD L L H X X VID X L X L L L 00 X 01h


S29GL128N S29GL256N S29GL512N

Cycle 1 L L H 22 X 7Eh
Device ID

Cycle 2 L L H X X VID X L X H H L 22 X 23h

Cycle 3 H H H 22 X 01h

Cycle 1 L L H 22 X 7Eh
Device ID

Cycle 2 L L H X X VID X L X H H L 22 X 22h

Cycle 3 H H H 22 X 01h

Cycle 1 L L H 22 X 7Eh
Device ID

Cycle 2 L L H X X VID X L X H H L 22 X 21h

Cycle 3 H H H 22 X 01h

Sector Group 01h (protected),


L L H SA X VID X L X L H L X X
Protection Verification 00h (unprotected)

SecSi Sector Indicator


Bit (DQ7), WP# 98h (factory locked),
L L H X X VID X L X L H H X X
protects highest 18h (not factory locked)
address sector

SecSi Sector Indicator


Bit (DQ7), WP# 88h (factory locked),
L L H X X VID X L X L H H X X
protects lowest 08h (not factory locked)
address sector

Legend: L = Logic Low = VIL, H = Logic High = VIH, SA = Sector Address, X = Don’t care.

Sector Protection
The device features several levels of sector protection, which can disable both the
program and erase operations in certain sectors or sector groups:

Persistent Sector Protection


A command sector protection method that replaces the old 12 V controlled pro-
tection method.

Password Sector Protection


A highly sophisticated protection method that requires a password before
changes to certain sectors or sector groups are permitted

WP# Hardware Protection


A write protect pin that can prevent program or erase operations in the outermost
sectors.
The WP# Hardware Protection feature is always available, independent of the
software managed protection method chosen.

Selecting a Sector Protection Mode


All parts default to operate in the Persistent Sector Protection mode. The cus-
tomer must then choose if the Persistent or Password Protection method is most

October 16, 2003 27631A1 S29GLxxxN MirrorBitTM Flash Family 45


A d v a n c e I n f o r m a t i o n

desirable. There are two one-time programmable non-volatile bits that define
which sector protection method will be used. If the customer decides to continue
using the Persistent Sector Protection method, they must set the Persistent
Sector Protection Mode Locking Bit. This will permanently set the part to op-
erate only using Persistent Sector Protection. If the customer decides to use the
password method, they must set the Password Mode Locking Bit. This will
permanently set the part to operate only using password sector protection.
It is important to remember that setting either the Persistent Sector Protec-
tion Mode Locking Bit or the Password Mode Locking Bit permanently
selects the protection mode. It is not possible to switch between the two methods
once a locking bit has been set. It is important that one mode is explicitly
selected when the device is first programmed, rather than relying on the
default mode alone. This is so that it is not possible for a system program or
virus to later set the Password Mode Locking Bit, which would cause an unex-
pected shift from the default Persistent Sector Protection Mode into the Password
Protection Mode.
The device is shipped with all sectors unprotected. The factory offers the option
of programming and protecting sectors at the factory prior to shipping the device
through the ExpressFlash™ Service. Contact your sales representative for details.
It is possible to determine whether a sector is protected or unprotected. See “Au-
toselect Command Sequence” section on page 57 for details.

Advanced Sector Protection


Advanced Sector Protection features several levels of sector protection, which can
disable both the program and erase operations in certain sectors.
Persistent Sector Protection is a method that replaces the old 12V controlled
protection method.
Password Sector Protection is a highly sophisticated protection method that
requires a password before changes to certain sectors are permitted.
Advanced Sector Protection is available when ACC = VHH.

Lock Register
The Lock Register consists of 3 bits. The Customer SecSi Sector Protection Bit is
DQ0, Persistent Protection Mode Lock Bit is DQ1, and Password Protection Mode
Lock Bit is DQ2. Each of these bits are non-volatile. DQ15-DQ3 are reserved and
will be 1's. Each bit in the lock register is described in detail in the Persistent Sec-
tor Protection and Password Sector Protection sections below.

Table 6. Lock Register


DQ15-3 DQ2 DQ1 DQ0

Password Protection Persistent Protection SecSi Sector


Don’t Care
Mode Lock Bit Mode Lock Bit Protection Bit

Persistent Sector Protection


The Persistent Sector Protection method replaces the old 12 V controlled protec-
tion method while at the same time enhancing flexibility by providing three
different sector protection states:

—Dynamically Locked-The sector is protected and can be changed by


a simple command

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—Persistently Locked-A sector is protected and cannot be changed


—Unlocked-The sector is unprotected and can be changed by a simple
command
In order to achieve these states, three types of "bits"are going to be used:

Dynamic Protection Bit (DYB)


A volatile protection bit is assigned for each sector. After power-up or hardware
reset, the contents of all DYB bits are in the "unprotected state" if the DYB Lock
Bit of the "Lock Register" is not programmed. If the DYB Lock Bit of the "Lock
Register" is programmed, all DYB bits will power-up or hardware reset to the
"protected state". Each DYB is individually modifiable through the DYB Set Com-
mand and DYB Clear Command. When the parts are first shipped, all of the PPB
bits are cleared into the unprotected state. The DYB bits and PPB Lock bit are
defaulted to power up in the cleared state or unprotected state - meaning the all
PPB bits are changeable.
The Protection State for each sector is determined by the logical OR of the PPB
and the DYB related to that sector. For the sectors that have the PPB bits cleared,
the DYB bits control whether or not the sector is protected or unprotected. By
issuing the DYB Set and DYB Clear command sequences, the DYB bits will be pro-
tected or unprotected, thus placing each sector in the protected or unprotected
state. These are the so-called Dynamic Locked or Unlocked states. They are
called dynamic states because it is very easy to switch back and forth between
the protected and un-protected conditions. This allows software to easily protect
sectors against inadvertent changes yet does not prevent the easy removal of
protection when changes are needed.
The DYB bits maybe set or cleared as often as needed. The PPB bits allow for a
more static, and difficult to change, level of protection. The PPB bits retain their
state across power cycles because they are Non-Volatile. Individual PPB bits are
set with a program command but must all be cleared as a group through an erase
command.
The PPB Lock Bit adds an additional level of protection. Once all PPB bits are pro-
grammed to the desired settings, the PPB Lock Bit may be set to the "freeze
state". Setting the PPB Lock Bit to the "freeze state" disables all program and
erase commands to the Non-Volatile PPB bits. In effect, the PPB Lock Bit locks
the PPB bits into their current state. The only way to clear the PPB Lock Bit to the
"unfreeze state" is to go through a power cycle, or hardware reset. The Software
Reset command will not clear the PPB Lock Bit to the "unfreeze state". System
boot code can determine if any changes to the PPB bits are needed e.g. to allow
new system code to be downloaded. If no changes are needed then the boot
code can set the PPB Lock Bit to disable any further changes to the PPB bits during
system operation.
The WP# write protect pin adds a final level of hardware protection. When this
pin is low it is not possible to change the contents of the WP# protected sectors.
These sectors generally hold system boot code. So, the WP# pin can prevent any
changes to the boot code that could override the choices made while setting up
sector protection during system initialization.
It is possible to have sectors that have been persistently locked, and sectors that
are left in the dynamic state. The sectors in the dynamic state are all unprotected.
If there is a need to protect some of them, a simple DYB Set command sequence
is all that is necessary. The DYB Set and DYB Clear commands for the dynamic

October 16, 2003 27631A1 S29GLxxxN MirrorBitTM Flash Family 47


A d v a n c e I n f o r m a t i o n

sectors switch the DYB bits to signify protected and unprotected, respectively. If
there is a need to change the status of the persistently locked sectors, a few more
steps are required. First, the PPB Lock Bit must be disabled to the "unfreeze
state" by either putting the device through a power-cycle, or hardware reset. The
PPB bits can then be changed to reflect the desired settings. Setting the PPB Lock
Bit once again to the "freeze state" will lock the PPB bits, and the device operates
normally again.
Note: to achieve the best protection, it's recommended to execute the PPB Lock
Bit Set command early in the boot code, and protect the boot code by holding
WP# = VIL.

Persistent Protection Bit (PPB)


A single Persistent (non-volatile) Protection Bit is assigned to each sector. If a
PPB is programmed to the protected state through the "PPB Program" command,
that sector will be protected from program or erase operations will be read-only.
If a PPB requires erasure, all of the sector PPB bits must first be erased in parallel
through the "All PPB Erase" command. The "All PPB Erase" command will prepro-
grammed all PPB bits prior to PPB erasing. All PPB bits erase in parallel, unlike
programming where individual PPB bits are programmable. The PPB bits have the
same endurance as the flash memory.

Persistent Protection Bit Lock (PPB Lock Bit)


A global volatile bit. When set to the "freeze state", the PPB bits cannot be
changed. When cleared to the "unfreeze state", the PPB bits are changeable.
There is only one PPB Lock Bit per device. The PPB Lock Bit is cleared to the "un-
freeze state" after power-up or hardware reset. There is no command sequence
to unlock or "unfreeze" the PPB Lock Bit.

Table 7. Sector Protection Schemes


Protection States
Sector State
DYB Bit PPB Bit PPB Lock Bit

Unprotect Unprotect Unfreeze Unprotected – PPB and DYB are changeable

Unprotected – PPB not changeable, DYB is


Unprotect Unprotect Freeze
changeable

Unprotect Protect Unfreeze Protected – PPB and DYB are changeable

Unprotect Protect Freeze Protected – PPB not changeable, DYB is changeable

Protect Unprotect Unfreeze Protected – PPB and DYB are changeable

Protect Unprotect Freeze Protected – PPB not changeable, DYB is changeable

Protect Protect Unfreeze Protected – PPB and DYB are changeable

Protect Protect Freeze Protected – PPB not changeable, DYB is changeable

Table 7 contains all possible combinations of the DYB bit, PPB bit, and PPB Lock
Bit relating to the status of the sector. In summary, if the PPB bit is set, and the
PPB Lock Bit is set, the sector is protected and the protection cannot be removed
until the next power cycle or hardware reset clears the PPB Lock Bit to "unfreeze
state". If the PPB bit is cleared, the sector can be dynamically locked or unlocked.
The DYB bit then controls whether or not the sector is protected or unprotected.

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A d v a n c e I n f o r m a t i o n

If the user attempts to program or erase a protected sector, the device ignores
the command and returns to read mode. A program command to a protected
sector enables status polling for approximately 1 µs before the device returns to
read mode without having modified the contents of the protected sector. An
erase command to a protected sector enables status polling for approximately 50
µs after which the device returns to read mode without having erased the pro-
tected sector. The programming of the DYB bit, PPB bit, and PPB Lock Bit for a
given sector can be verified by writing a DYB Status Read, PPB Status Read, and
PPB Lock Status Read commands to the device.

Persistent Protection Mode Lock Bit


Like the Password Protection Mode Lock Bit, a Persistent Protection Mode Lock Bit
exists to guarantee that the device remain in software sector protection. Once
programmed, the Persistent Protection Mode Lock Bit prevents programming of
the Password Protection Mode Lock Bit. This guarantees that a hacker could not
place the device in Password Protection Mode. The Password Protection Mode
Lock Bit resides in the "Lock Register".

Password Sector Protection


The Password Sector Protection method allows an even higher level of security
than the Persistent Sector Protection method. There are two main differences be-
tween the Persistent Sector Protection and the Password Sector Protection
methods:

—When the device is first powered on, or comes out of a reset cycle, the
PPB Lock Bit is set to the locked state, or the freeze state, rather than
cleared to the unlocked state, or the unfreeze state.
—The only means to clear and unfreeze the PPB Lock Bit is by writing a
unique 64-bit Password to the device.
The Password Sector Protection method is otherwise identical to the Persistent
Sector Protection method.
A 64-bit password is the only additional tool utilized in this method.
The password is stored in a one-time programmable (OTP) region outside of the
flash memory. Once the Password Protection Mode Lock Bit is set, the password
is permanently set with no means to read, program, or erase it. The password is
used to clear and unfreeze the PPB Lock Bit. The Password Unlock command
must be written to the flash, along with a password. The flash device internally
compares the given password with the pre-programmed password. If they
match, the PPB Lock Bit is cleared to the "unfreezed state", and the PPB bits can
be altered. If they do not match, the flash device does nothing. There is a built-
in 1 µs delay for each "password check" after the valid 64-bit password has being
entered for the PPB Lock Bit to be cleared to the "unfreezed state". This delay is
intended to thwart any efforts to run a program that tries all possible combina-
tions in order to crack the password.

Password and Password Protection Mode Lock Bit


In order to select the Password Sector Protection method, the customer must first
program the password. The factory recommends that the password be somehow
correlated to the unique Electronic Serial Number (ESN) of the particular flash de-
vice. Each ESN is different for every flash device; therefore each password should
be different for every flash device. While programming in the password region,
the customer may perform Password Read operations. Once the desired pass-

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A d v a n c e I n f o r m a t i o n

word is programmed in, the customer must then set the Password Protection
Mode Lock Bit. This operation achieves two objectives:
1.It permanently sets the device to operate using the Password Protection Mode.
It is not possible to reverse this function.
2. It also disables all further commands to the password region. All program, and
read operations are ignored.
Both of these objectives are important, and if not carefully considered, may lead
to unrecoverable errors. The user must be sure that the Password Sector Protec-
tion method is desired when programming the Password Protection Mode Lock
Bit. More importantly, the user must be sure that the password is correct when
the Password Protection Mode Lock Bit is programmed. Due to the fact that read
operations are disabled, there is no means to read what the password is after-
wards. If the password is lost after programming the Password Protection Mode
Lock Bit, there will be no way to clear and unfreeze the PPB Lock Bit. The Pass-
word Protection Mode Lock Bit, once programmed, prevents reading the 64-bit
password on the DQ bus and further password programming. The Password Pro-
tection Mode Lock Bit is not erasable. Once Password Protection Mode Lock Bit is
programmed, the Persistent Protection Mode Lock Bit is disabled from program-
ming, guaranteeing that no changes to the protection scheme are allowed.

64-bit Password
The 64-bit Password is located in its own memory space and is accessible through
the use of the Password Program and Password Read commands. The password
function works in conjunction with the Password Protection Mode Lock Bit, which
when programmed, prevents the Password Read command from reading the con-
tents of the password on the pins of the device.

Persistent Protection Bit Lock (PPB Lock Bit)


A global volatile bit. The PPB Lock Bit is a volatile bit that reflects the state of the
Password Protection Mode Lock Bit after power-up reset. If the Password Protec-
tion Mode Lock Bit is also programmed after programming the Password, the
Password Unlock command must be issued to clear and unfreeze the PPB Lock Bit
after a hardware reset (RESET# asserted) or a power-up reset. Successful exe-
cution of the Password Unlock command clears and unfreezes the PPB Lock Bit,
allowing for sector PPB bits to be modified. Without issuing the Password Unlock
command, while asserting RESET#, taking the device through a power-on reset,
or issuing the PPB Lock Bit Set command sets the PPB Lock Bit to a the "freeze
state".
If the Password Protection Mode Lock Bit is not programmed, the device defaults
to Persistent Protection Mode. In the Persistent Protection Mode, the PPB Lock Bit
is cleared to the "unfreeze state" after power-up or hardware reset. The PPB Lock
Bit is set to the "freeze state" by issuing the PPB Lock Bit Set command. Once
set to the "freeze state" the only means for clearing the PPB Lock Bit to the "un-
freeze state" is by issuing a hardware or power-up reset. The Password Unlock
command is ignored in Persistent Protection Mode.

SecSi (Secured Silicon) Sector Flash Memory Region


The SecSi (Secured Silicon) Sector feature provides a Flash memory region that
enables permanent part identification through an Electronic Serial Number
(ESN). The SecSi Sector is 256 bytes in length, and uses a SecSi Sector Indicator
Bit (DQ7) to indicate whether or not the SecSi Sector is locked when shipped from

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the factory. This bit is permanently set at the factory and cannot be changed,
which prevents cloning of a factory locked part. This ensures the security of the
ESN once the product is shipped to the field.
The factory offers the device with the SecSi Sector either customer lockable
(standard shipping option) or factory locked (contact an AMD sales representa-
tive for ordering information). The customer-lockable version is shipped with the
SecSi Sector unprotected, allowing customers to program the sector after receiv-
ing the device. The customer-lockable version also has the SecSi Sector Indicator
Bit permanently set to a “0.” The factory-locked version is always protected when
shipped from the factory, and has the SecSi (Secured Silicon) Sector Indicator Bit
permanently set to a “1.” Thus, the SecSi Sector Indicator Bit prevents customer-
lockable devices from being used to replace devices that are factory locked. Note
that the ACC function and unlock bypass modes are not available when the SecSi
Sector is enabled.
The SecSi sector address space in this device is allocated as follows:

ExpressFlash
SecSi Sector Address Range Customer Lockable ESN Factory Locked Factory Locked

ESN or determined by
000000h–000007h ESN
customer
Determined by customer
000008h–00007Fh Unavailable Determined by customer

The system accesses the SecSi Sector through a command sequence (see “Write
Protect (WP#)”). After the system has written the Enter SecSi Sector command
sequence, it may read the SecSi Sector by using the addresses normally occupied
by the first sector (SA0). This mode of operation continues until the system issues
the Exit SecSi Sector command sequence, or until power is removed from the de-
vice. On power-up, or following a hardware reset, the device reverts to sending
commands to sector SA0.

Customer Lockable: SecSi Sector NOT Programmed or Protected


At the Factory
Unless otherwise specified, the device is shipped such that the customer may
program and protect the 256-byte SecSi sector.
The system may program the SecSi Sector using the write-buffer, accelerated
and/or unlock bypass methods, in addition to the standard programming com-
mand sequence. See Command Definitions.
Programming and protecting the SecSi Sector must be used with caution since,
once protected, there is no procedure available for unprotecting the SecSi Sector
area and none of the bits in the SecSi Sector memory space can be modified in
any way.
The SecSi Sector area can be protected using one of the following procedures:
„ Write the three-cycle Enter SecSi Sector Region command sequence, and
then follow the in-system sector protect algorithm as shown in Figure 2, ex-
cept that RESET# may be at either VIH or VID. This allows in-system protec-
tion of the SecSi Sector without raising any device pin to a high voltage. Note
that this method is only applicable to the SecSi Sector.
„ To verify the protect/unprotect status of the SecSi Sector, follow the algo-
rithm shown in Figure 1.
Once the SecSi Sector is programmed, locked and verified, the system must write
the Exit SecSi Sector Region command sequence to return to reading and writing
within the remainder of the array.

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Factory Locked: SecSi Sector Programmed and Protected At the


Factory
In devices with an ESN, the SecSi Sector is protected when the device is shipped
from the factory. The SecSi Sector cannot be modified in any way. An ESN Factory
Locked device has an 16-byte random ESN at addresses 000000h–000007h.
Please contact your sales representative for details on ordering ESN Factory
Locked devices.
Customers may opt to have their code programmed by the factory through the
ExpressFlash service (Express Flash Factory Locked). The devices are then
shipped from the factory with the SecSi Sector permanently locked. Contact your
sales representative for details on using the ExpressFlash service.

Write Protect (WP#)


The Write Protect function provides a hardware method of protecting the first or
last sector group without using VID. Write Protect is one of two functions provided
by the WP#/ACC input.
If the system asserts VIL on the WP#/ACC pin, the device disables program and
erase functions in the first or last sector group independently of whether those
sector groups were protected or unprotected using the method described in“Ad-
vanced Sector Protection” section on page 46. Note that if WP#/ACC is at VIL
when the device is in the standby mode, the maximum input load current is in-
creased. See the table in “DC Characteristics” section on page 85.
If the system asserts VIH on the WP#/ACC pin, the device reverts to
whether the first or last sector was previously set to be protected or un-
protected using the method described in “Sector Group Protection and
Unprotection”. Note that WP# has an internal pullup; when uncon-
nected, WP# is at VIH.

Hardware Data Protection


The command sequence requirement of unlock cycles for programming or erasing
provides data protection against inadvertent writes (refer to Tables 16 and 17 for
command definitions). In addition, the following hardware data protection mea-
sures prevent accidental erasure or programming, which might otherwise be
caused by spurious system level signals during VCC power-up and power-down
transitions, or from system noise.

Low VCC Write Inhibit


When VCC is less than VLKO, the device does not accept any write cycles. This pro-
tects data during VCC power-up and power-down. The command register and all
internal program/erase circuits are disabled, and the device resets to the read
mode. Subsequent writes are ignored until VCC is greater than VLKO. The system
must provide the proper signals to the control pins to prevent unintentional writes
when VCC is greater than VLKO.

Write Pulse “Glitch” Protection


Noise pulses of less than 5 ns (typical) on OE#, CE# or WE# do not initiate a write
cycle.

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Logical Inhibit
Write cycles are inhibited by holding any one of OE# = VIL, CE# = VIH or WE# =
VIH. To initiate a write cycle, CE# and WE# must be a logical zero while OE# is a
logical one.

Power-Up Write Inhibit


If WE# = CE# = VIL and OE# = VIH during power up, the device does not accept
commands on the rising edge of WE#. The internal state machine is automatically
reset to the read mode on power-up.

Common Flash Memory Interface (CFI)


The Common Flash Interface (CFI) specification outlines device and host system
software interrogation handshake, which allows specific vendor-specified soft-
ware algorithms to be used for entire families of devices. Software support can
then be device-independent, JEDEC ID-independent, and forward- and back-
ward-compatible for the specified flash device families. Flash vendors can
standardize their existing interfaces for long-term compatibility.
This device enters the CFI Query mode when the system writes the CFI Query
command, 98h, to address 55h, any time the device is ready to read array data.
The system can read CFI information at the addresses given in Tables 8-11. To
terminate reading CFI data, the system must write the reset command.
The system can also write the CFI query command when the device is in the au-
toselect mode. The device enters the CFI query mode, and the system can read
CFI data at the addresses given in Tables 8–11. The system must write the reset
command to return the device to reading array data.
For further information, please refer to the CFI Specification and CFI Publication
100, available via the World Wide Web at http://www.amd.com/flash/cfi. Alter-
natively, contact your sales representative for copies of these documents.

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Table 8. CFI Query Identification String


Addresses (x16) Data Description

10h 0051h
11h 0052h Query Unique ASCII string “QRY”
12h 0059h

13h 0002h
Primary OEM Command Set
14h 0000h

15h 0040h
Address for Primary Extended Table
16h 0000h

17h 0000h
Alternate OEM Command Set (00h = none exists)
18h 0000h

19h 0000h
Address for Alternate OEM Extended Table (00h = none exists)
1Ah 0000h

Table 9. System Interface String


Addresses (x16) Data Description

VCC Min. (write/erase)


1Bh 0027h
D7–D4: volt, D3–D0: 100 millivolt

VCC Max. (write/erase)


1Ch 0036h
D7–D4: volt, D3–D0: 100 millivolt

1Dh 0000h VPP Min. voltage (00h = no VPP pin present)

1Eh 0000h VPP Max. voltage (00h = no VPP pin present)

1Fh 0007h Typical timeout per single byte/word write 2N µs

20h 0007h Typical timeout for Min. size buffer write 2N µs (00h = not supported)

21h 000Ah Typical timeout per individual block erase 2N ms

22h 0000h Typical timeout for full chip erase 2N ms (00h = not supported)

23h 0001h Max. timeout for byte/word write 2N times typical

24h 0005h Max. timeout for buffer write 2N times typical

25h 0004h Max. timeout per individual block erase 2N times typical
26h 0000h Max. timeout for full chip erase 2N times typical (00h = not supported)

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Table 10. Device Geometry Definition


Addresses (x16) Data Description
001Ah Device Size = 2N byte
27h 0019h
0018h 1A = 512 Mb, 19 = 256 Mb, 18 = 128 Mb

28h 0002h
Flash Device Interface description (refer to CFI publication 100)
29h 0000h

2Ah 0005h Max. number of byte in multi-byte write = 2N


2Bh 0000h (00h = not supported)

Number of Erase Block Regions within device (01h = uniform device, 02h = boot
2Ch 0001h
device)

Erase Block Region 1 Information


2Dh 00xxh
(refer to the CFI specification or CFI publication 100)
2Eh 000xh
00FFh, 001h, 0000h, 0002h = 512 Mb
2Fh 0000h
00FFh, 0000h, 0000h, 0002h = 256 Mb
30h 000xh
007Fh, 0000h, 0000h, 0002h = 128 Mb

31h 0000h
32h 0000h
Erase Block Region 2 Information (refer to CFI publication 100)
33h 0000h
34h 0000h

35h 0000h
36h 0000h
Erase Block Region 3 Information (refer to CFI publication 100)
37h 0000h
38h 0000h

39h 0000h
3Ah 0000h
Erase Block Region 4 Information (refer to CFI publication 100)
3Bh 0000h
3Ch 0000h

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Table 11. Primary Vendor-Specific Extended Query


Addresses (x16) Data Description

40h 0050h
41h 0052h Query-unique ASCII string “PRI”
42h 0049h

43h 0031h Major version number, ASCII

44h 0033h Minor version number, ASCII

Address Sensitive Unlock (Bits 1-0)


45h 0010h 0 = Required, 1 = Not Required
Process Technology (Bits 7-2) 0100b = 110 nm MirrorBit

Erase Suspend
46h 0002h
0 = Not Supported, 1 = To Read Only, 2 = To Read & Write

Sector Protect
47h 0001h
0 = Not Supported, X = Number of sectors in per group

Sector Temporary Unprotect


48h 0000h
00 = Not Supported, 01 = Supported

Sector Protect/Unprotect scheme


49h 0008h
0008h = Advanced Sector Protection

Simultaneous Operation
4Ah 0000h
00 = Not Supported, X = Number of Sectors in Bank

Burst Mode Type


4Bh 0000h
00 = Not Supported, 01 = Supported

Page Mode Type


4Ch 0002h
00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page

ACC (Acceleration) Supply Minimum


4Dh 00B5h
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV

ACC (Acceleration) Supply Maximum


4Eh 00C5h
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV

Top/Bottom Boot Sector Flag


0004h/ 00h = Uniform Device without WP# protect, 02h = Bottom Boot Device, 03h =
4Fh
0005h Top Boot Device, 04h = Uniform sectors bottom WP# protect, 05h = Uniform
sectors top WP# protect

Program Suspend
50h 0001h
00h = Not Supported, 01h = Supported

Command Definitions
Writing specific address and data commands or sequences into the command
register initiates device operations. Table 12 and Table 13 define the valid register
command sequences. Writing incorrect address and data values or writing them
in the improper sequence may place the device in an unknown state. A reset com-
mand is then required to return the device to reading array data.
All addresses are latched on the falling edge of WE# or CE#, whichever happens
later. All data is latched on the rising edge of WE# or CE#, whichever happens
first. Refer to the AC Characteristics section for timing diagrams.

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Reading Array Data


The device is automatically set to reading array data after device power-up. No
commands are required to retrieve data. The device is ready to read array data
after completing an Embedded Program or Embedded Erase algorithm.
After the device accepts an Erase Suspend command, the device enters the
erase-suspend-read mode, after which the system can read data from any non-
erase-suspended sector. After completing a programming operation in the Erase
Suspend mode, the system may once again read array data with the same ex-
ception. See the Erase Suspend/Erase Resume Commands section for more
information.
The system must issue the reset command to return the device to the read (or
erase-suspend-read) mode if DQ5 goes high during an active program or erase
operation, or if the device is in the autoselect mode. See the next section, Reset
Command, for more information.
See also Requirements for Reading Array Data in the Device Bus Operations sec-
tion for more information. The Read-Only Operations–“AC Characteristics”
section on page 87 provides the read parameters, and Figure 11 shows the timing
diagram.

Reset Command
Writing the reset command resets the device to the read or erase-suspend-read
mode. Address bits are don’t cares for this command.
The reset command may be written between the sequence cycles in an erase
command sequence before erasing begins. This resets the device to the read
mode. Once erasure begins, however, the device ignores reset commands until
the operation is complete.
The reset command may be written between the sequence cycles in a program
command sequence before programming begins. This resets the device to the
read mode. If the program command sequence is written while the device is in
the Erase Suspend mode, writing the reset command returns the device to the
erase-suspend-read mode. Once programming begins, however, the device ig-
nores reset commands until the operation is complete.
The reset command may be written between the sequence cycles in an autoselect
command sequence. Once in the autoselect mode, the reset command must be
written to return to the read mode. If the device entered the autoselect mode
while in the Erase Suspend mode, writing the reset command returns the device
to the erase-suspend-read mode.
If DQ5 goes high during a program or erase operation, writing the reset command
returns the device to the read mode (or erase-suspend-read mode if the device
was in Erase Suspend).
Note that if DQ1 goes high during a Write Buffer Programming operation, the sys-
tem must write the Write-to-Buffer-Abort Reset command sequence to reset the
device for the next operation.

Autoselect Command Sequence


The autoselect command sequence allows the host system to access the manu-
facturer and device codes, and determine whether or not a sector is protected.
Table 12 and Table 13 show the address and data requirements. This method is
an alternative to that shown in Table 5, which is intended for PROM programmers

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and requires VID on address pin A9. The autoselect command sequence may be
written to an address that is either in the read or erase-suspend-read mode. The
autoselect command may not be written while the device is actively programming
or erasing.
The autoselect command sequence is initiated by first writing two unlock cycles.
This is followed by a third write cycle that contains the autoselect command. The
device then enters the autoselect mode. The system may read at any address any
number of times without initiating another autoselect command sequence:
„ A read cycle at address XX00h returns the manufacturer code.
„ Three read cycles at addresses 01h, 0Eh, and 0Fh return the device code.
„ A read cycle to an address containing a sector address (SA), and the address
02h on A7–A0 in word mode returns 01h if the sector is protected, or 00h if
it is unprotected.
The system must write the reset command to return to the read mode (or erase-
suspend-read mode if the device was previously in Erase Suspend).

Enter SecSi Sector/Exit SecSi Sector Command Sequence


The SecSi Sector region provides a secured data area containing an 8-word/16-
byte random Electronic Serial Number (ESN). The system can access the SecSi
Sector region by issuing the three-cycle Enter SecSi Sector command sequence.
The device continues to access the SecSi Sector region until the system issues
the four-cycle Exit SecSi Sector command sequence. The Exit SecSi Sector com-
mand sequence returns the device to normal operation. Table 12 and Table 13
show the address and data requirements for both command sequences. See also
“SecSi (Secured Silicon) Sector Flash Memory Region” for further information.
Note that the ACC function and unlock bypass modes are not available when the
SecSi Sector is enabled.

Word/Byte Program Command Sequence


Programming is a four-bus-cycle operation. The program command sequence is
initiated by writing two unlock write cycles, followed by the program set-up com-
mand. The program address and data are written next, which in turn initiate the
Embedded Program algorithm. The system is not required to provide further con-
trols or timings. The device automatically provides internally generated program
pulses and verifies the programmed cell margin. Table 12 and Table 13 show the
address and data requirements for the word program command sequence.
When the Embedded Program algorithm is complete, the device then returns to
the read mode and addresses are no longer latched. The system can determine
the status of the program operation by using DQ7 or DQ6. Refer to the Write Op-
eration Status section for information on these status bits.
Any commands written to the device during the Embedded Program Algorithm
are ignored. Note that the SecSi Sector, autoselect, and CFI functions are
unavailable when a program operation is in progress. Note that a hard-
ware reset immediately terminates the program operation. The program
command sequence should be reinitiated once the device has returned to the
read mode, to ensure data integrity.
Programming is allowed in any sequence and across sector boundaries. A bit
cannot be programmed from “0” back to a “1.” Attempting to do so may
cause the device to set DQ5 = 1, or cause the DQ7 and DQ6 status bits to indicate
the operation was successful. However, a succeeding read will show that the data
is still “0.” Only erase operations can convert a “0” to a “1.”

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Unlock Bypass Command Sequence


The unlock bypass feature allows the system to program words to the device
faster than using the standard program command sequence. The unlock bypass
command sequence is initiated by first writing two unlock cycles. This is followed
by a third write cycle containing the unlock bypass command, 20h. The device
then enters the unlock bypass mode. A two-cycle unlock bypass program com-
mand sequence is all that is required to program in this mode. The first cycle in
this sequence contains the unlock bypass program command, A0h; the second
cycle contains the program address and data. Additional data is programmed in
the same manner. This mode dispenses with the initial two unlock cycles required
in the standard program command sequence, resulting in faster total program-
ming time. Table 12 and Table 13 show the requirements for the command
sequence.
During the unlock bypass mode, only the Unlock Bypass Program and Unlock By-
pass Reset commands are valid. To exit the unlock bypass mode, the system
must issue the two-cycle unlock bypass reset command sequence. (See Table 12
and Table 13).

Write Buffer Programming


Write Buffer Programming allows the system write to a maximum of 16 words/32
bytes in one programming operation. This results in faster effective programming
time than the standard programming algorithms. The Write Buffer Programming
command sequence is initiated by first writing two unlock cycles. This is followed
by a third write cycle containing the Write Buffer Load command written at the
Sector Address in which programming will occur. The fourth cycle writes the sec-
tor address and the number of word locations, minus one, to be programmed. For
example, if the system will program 6 unique address locations, then 05h should
be written to the device. This tells the device how many write buffer addresses
will be loaded with data and therefore when to expect the Program Buffer to Flash
command. The number of locations to program cannot exceed the size of the
write buffer or the operation will abort.
The fifth cycle writes the first address location and data to be programmed. The
write-buffer-page is selected by address bits AMAX–A4. All subsequent address/
data pairs must fall within the selected-write-buffer-page. The system then
writes the remaining address/data pairs into the write buffer. Write buffer loca-
tions may be loaded in any order.
The write-buffer-page address must be the same for all address/data pairs loaded
into the write buffer. (This means Write Buffer Programming cannot be performed
across multiple write-buffer pages. This also means that Write Buffer Program-
ming cannot be performed across multiple sectors. If the system attempts to load
programming data outside of the selected write-buffer page, the operation will
abort.
Note that if a Write Buffer address location is loaded multiple times, the address/
data pair counter will be decremented for every data load operation. The host
system must therefore account for loading a write-buffer location more than
once. The counter decrements for each data load operation, not for each unique
write-buffer-address location. Note also that if an address location is loaded more
than once into the buffer, the final data loaded for that address will be
programmed.
Once the specified number of write buffer locations have been loaded, the system
must then write the Program Buffer to Flash command at the sector address. Any

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A d v a n c e I n f o r m a t i o n

other address and data combination aborts the Write Buffer Programming oper-
ation. The device then begins programming. Data polling should be used while
monitoring the last address location loaded into the write buffer. DQ7, DQ6, DQ5,
and DQ1 should be monitored to determine the device status during Write Buffer
Programming.
The write-buffer programming operation can be suspended using the standard
program suspend/resume commands. Upon successful completion of the Write
Buffer Programming operation, the device is ready to execute the next command.
The Write Buffer Programming Sequence can be aborted in the following ways:
„ Load a value that is greater than the page buffer size during the Number of
Locations to Program step.
„ Write to an address in a sector different than the one specified during the
Write-Buffer-Load command.
„ Write an Address/Data pair to a different write-buffer-page than the one se-
lected by the Starting Address during the write buffer data loading stage of
the operation.
„ Write data other than the Confirm Command after the specified number of
data load cycles.
The abort condition is indicated by DQ1 = 1, DQ7 = DATA# (for the last address
location loaded), DQ6 = toggle, and DQ5=0. A Write-to-Buffer-Abort Reset com-
mand sequence must be written to reset the device for the next operation. Note
that the full 3-cycle Write-to-Buffer-Abort Reset command sequence is required
when using Write-Buffer-Programming features in Unlock Bypass mode.
Programming is allowed in any sequence and across sector boundaries. A bit
cannot be programmed from “0” back to a “1.” Attempting to do so may
cause the device to set DQ5 = 1, or cause the DQ7 and DQ6 status bits to indicate
the operation was successful. However, a succeeding read will show that the data
is still “0.” Only erase operations can convert a “0” to a “1.”

Accelerated Program
The device offers accelerated program operations through the WP#/ACC pin.
When the system asserts VHH on the WP#/ACC pin, the device automatically en-
ters the Unlock Bypass mode. The system may then write the two-cycle Unlock
Bypass program command sequence. The device uses the higher voltage on the
WP#/ACC pin to accelerate the operation. Note that the WP#/ACC pin must not
be at VHH for operations other than accelerated programming, or device damage
may result. WP# has an internal pullup; when unconnected, WP# is at VIH.
Figure 3 illustrates the algorithm for the program operation. Refer to the Erase
and Program Operations–“AC Characteristics” section on page 87 section for pa-
rameters, and Figure 14 for timing diagrams.

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Write “Write to Buffer”


command and
Sector Address

Write number of addresses Part of “Write to Buffer”


to program minus 1(WC) Command Sequence
and Sector Address

Write first address/data

Yes
WC = 0 ?

No Write to a different
sector address
Abort Write to Yes
Buffer Operation?
Write to buffer ABORTED.
No Must write “Write-to-buffer
Abort Reset” command
( Write next address/data pair sequence to return
to read mode.

WC = WC - 1

Write program buffer to


flash sector address Notes:
1. When Sector Address is specified, any
address in the selected sector is acceptable.
However, when loading Write-Buffer
address locations with data, all addresses
Read DQ15 - DQ0 at
must fall within the selected Write-Buffer
Last Loaded Address
Page.
2. DQ7 may change simultaneously with DQ5.
Therefore, DQ7 should be verified.
Yes 3. If this flowchart location was reached
DQ7 and DQ15 = Data? because DQ5= “1”, then the device FAILED.
If this flowchart location was reached
No No because DQ1= “1”, then the Write to Buffer
operation was ABORTED. In either case, the
No proper reset command must be written
DQ1 = 1? DQ5 and DQ13 = 1?
before the device can begin another
operation. If DQ1=1, write the Write-
Yes Yes Buffer-Programming-Abort-Reset
command. if DQ5=1, write the Reset
Read DQ15 - DQ0 with command.
address = Last Loaded
Address 4. See Tables 16 and 17 for command
sequences required for write buffer
programming.

Yes
DQ7 and DQ15 = Data?

No

FAIL or ABORT PASS

Figure 1. Write Buffer Programming Operation

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START

Write Program
Command Sequence

Data Poll
from System
Embedded
Program
algorithm
in progress

Verify Data?
No

Yes

No
Increment Address Last Address?

Yes

Programming
Completed

Note: See Table 12 and Table 13 for program com-


mand sequence.

Figure 2. Program Operation

Program Suspend/Program Resume Command Sequence


The Program Suspend command allows the system to interrupt a programming
operation or a Write to Buffer programming operation so that data can be read
from any non-suspended sector. When the Program Suspend command is written
during a programming process, the device halts the program operation within 15
µs maximum (5µs typical) and updates the status bits. Addresses are not re-
quired when writing the Program Suspend command.
After the programming operation has been suspended, the system can read array
data from any non-suspended sector. The Program Suspend command may also
be issued during a programming operation while an erase is suspended. In this
case, data may be read from any addresses not in Erase Suspend or Program
Suspend. If a read is needed from the SecSi Sector area (One-time Program
area), then user must use the proper command sequences to enter and exit this
region.
The system may also write the autoselect command sequence when the device
is in the Program Suspend mode. The system can read as many autoselect codes
as required. When the device exits the autoselect mode, the device reverts to the
Program Suspend mode, and is ready for another valid operation. See Autoselect
Command Sequence for more information.

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After the Program Resume command is written, the device reverts to program-
ming. The system can determine the status of the program operation using the
DQ7 or DQ6 status bits, just as in the standard program operation. See Write Op-
eration Status for more information.
The system must write the Program Resume command (address bits are don’t
care) to exit the Program Suspend mode and continue the programming opera-
tion. Further writes of the Resume command are ignored. Another Program
Suspend command can be written after the device has resume programming.

Program Operation
or Write-to-Buffer
Sequence in Progress

Write Program Suspend


Write address/data Command Sequence
XXXh/B0B0h
Command is also valid for
Erase-suspended-program
operations
Wait 15 µs

Autoselect and SecSi Sector


Read data as read operations are also allowed
required Data cannot be read from erase- or
program-suspended sectors

No Done
reading?

Yes
Write Program Resume
Write address/data Command Sequence
XXXh/3030h

Device reverts to
operation prior to
Program Suspend

Figure 3. Program Suspend/Program Resume

Chip Erase Command Sequence


Chip erase is a six bus cycle operation. The chip erase command sequence is ini-
tiated by writing two unlock cycles, followed by a set-up command. Two
additional unlock write cycles are then followed by the chip erase command,
which in turn invokes the Embedded Erase algorithm. The device does not require
the system to preprogram prior to erase. The Embedded Erase algorithm auto-
matically preprograms and verifies the entire memory for an all zero data pattern
prior to electrical erase. The system is not required to provide any controls or tim-
ings during these operations. Table 12 and Table 13 show the address and data
requirements for the chip erase command sequence.
When the Embedded Erase algorithm is complete, the device returns to the read
mode and addresses are no longer latched. The system can determine the status
of the erase operation by using DQ7, DQ6, or DQ2. Refer to the Write Operation
Status section for information on these status bits.

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Any commands written during the chip erase operation are ignored. However,
note that a hardware reset immediately terminates the erase operation. If that
occurs, the chip erase command sequence should be reinitiated once the device
has returned to reading array data, to ensure data integrity.
Figure 4 illustrates the algorithm for the erase operation. Refer to the Erase and
Program Operations table in the AC Characteristics section for parameters, and
Figure 16 section for timing diagrams.

Sector Erase Command Sequence


Sector erase is a six bus cycle operation. The sector erase command sequence is
initiated by writing two unlock cycles, followed by a set-up command. Two addi-
tional unlock cycles are written, and are then followed by the address of the
sector to be erased, and the sector erase command. Table 12 and Table 13 shows
the address and data requirements for the sector erase command sequence.
The device does not require the system to preprogram prior to erase. The Em-
bedded Erase algorithm automatically programs and verifies the entire memory
for an all zero data pattern prior to electrical erase. The system is not required to
provide any controls or timings during these operations.
After the command sequence is written, a sector erase time-out of 50 µs occurs.
During the time-out period, additional sector addresses and sector erase com-
mands may be written. Loading the sector erase buffer may be done in any
sequence, and the number of sectors may be from one sector to all sectors. The
time between these additional cycles must be less than 50 µs, otherwise erasure
may begin. Any sector erase address and command following the exceeded time-
out may or may not be accepted. It is recommended that processor interrupts be
disabled during this time to ensure all commands are accepted. The interrupts
can be re-enabled after the last Sector Erase command is written. Any com-
mand other than Sector Erase or Erase Suspend during the time-out
period resets the device to the read mode. Note that the SecSi Sector,
autoselect, and CFI functions are unavailable when an erase operation
in is progress. The system must rewrite the command sequence and any addi-
tional addresses and commands.
The system can monitor DQ3 to determine if the sector erase timer has timed out
(See the section on DQ3: Sector Erase Timer.). The time-out begins from the ris-
ing edge of the final WE# pulse in the command sequence.
When the Embedded Erase algorithm is complete, the device returns to reading
array data and addresses are no longer latched. The system can determine the
status of the erase operation by reading DQ7, DQ6, or DQ2 in the erasing sector.
Refer to the Write Operation Status section for information on these status bits.
Once the sector erase operation has begun, only the Erase Suspend command is
valid. All other commands are ignored. However, note that a hardware reset im-
mediately terminates the erase operation. If that occurs, the sector erase
command sequence should be reinitiated once the device has returned to reading
array data, to ensure data integrity.
Figure 4 illustrates the algorithm for the erase operation. Refer to the Erase and
Program Operations table in the AC Characteristics section for parameters, and
Figure 16 section for timing diagrams.

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START

Write Erase
Command Sequence
(Notes 1, 2)

Data Poll to Erasing


Bank from System
Embedded
Erase
algorithm
in progress
No
Data = FFh?

Yes

Erasure Completed

Notes:
1. See Table 12 and Table 13 for program command
sequence.
2. See the section on DQ3 for information on the sector
erase timer.

Figure 4. Erase Operation

Erase Suspend/Erase Resume Commands


The Erase Suspend command, B0h, allows the system to interrupt a sector erase
operation and then read data from, or program data to, any sector not selected
for erasure. This command is valid only during the sector erase operation, includ-
ing the 50 µs time-out period during the sector erase command sequence. The
Erase Suspend command is ignored if written during the chip erase operation or
Embedded Program algorithm.
When the Erase Suspend command is written during the sector erase operation,
the device requires a typical of 5 µs (maximum of 20 µs) to suspend the erase
operation. However, when the Erase Suspend command is written during the sec-
tor erase time-out, the device immediately terminates the time-out period and
suspends the erase operation.
After the erase operation has been suspended, the device enters the erase-sus-
pend-read mode. The system can read data from or program data to any sector
not selected for erasure. (The device “erase suspends” all sectors selected for
erasure.) Reading at any address within erase-suspended sectors produces sta-
tus information on DQ7–DQ0. The system can use DQ7, or DQ6 and DQ2
together, to determine if a sector is actively erasing or is erase-suspended. Refer
to the Write Operation Status section for information on these status bits.
After an erase-suspended program operation is complete, the device returns to
the erase-suspend-read mode. The system can determine the status of the pro-

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gram operation using the DQ7 or DQ6 status bits, just as in the standard word
program operation. Refer to the Write Operation Status section for more
information.
In the erase-suspend-read mode, the system can also issue the autoselect com-
mand sequence. Refer to the “Autoselect Mode” section on page 44 and
“Autoselect Command Sequence” section on page 57 sections for details.
To resume the sector erase operation, the system must write the Erase Resume
command. The address of the erase-suspended sector is required when writing
this command. Further writes of the Resume command are ignored. Another
Erase Suspend command can be written after the chip has resumed erasing.

Lock Register Command Set Definitions


The Lock Register Command Set permits the user to one-time program the SecSi
Sector Protection Bit, Persistent Protection Mode Locking Bit, and Password Pro-
tection Mode Locking Bit. The Lock Command Set also allows for the reading of
the SecSi Sector Protection Bit, Persistent Protection Mode Locking Bit, Password
Protection Mode Locking Bit, and Persistent Sector Protection OTP Bit.
The Lock Register Command Set Entry command sequence must be issued prior
to any of the commands listed following to enable proper command execution.
Note that issuing the Lock Register Command Set Entry command disables reads
and writes for the flash memory.

—Lock Register Program Command


—Lock Register Read Command
—Lock Register Exit Command
The Lock Register Command Set Exit command must be issued after the execu-
tion of the commands to reset the device to read mode. Otherwise the device will
hang.
For either the SecSi Sector to be locked, or the device to be permanently set to
the Persistent Protection Mode or the Password Protection Mode, or the device to
be permanently set to boot the DYB bits in the protected state or removing erase
functionality from all PPB Bits, the SecSi Sector Protection Bit, Persistent Protec-
tion Mode Locking Bit, and Password Protection Mode Locking Bit must be
programmed respectively. Note that the Persistent Protection Mode Locking Bit
and Password Protection Mode can never be programmed together at the same
time. If so, the Lock Register Program operation will abort and return the device
into ready memory array.
The Lock Register Command Set Exit command must be initiated to re-enable
reads and writes to the flash memory.

Password Protection Command Set Definitions


The Password Protection Command Set permits the user to program the 64-bit
password, verify the programming of the 64-bit password, and then later unlock
the device by issuing the valid 64-bit password.
The Password Protection Command Set Entry command sequence must be issued
prior to any of the commands listed following to enable proper command
execution.
Note that issuing the Password Protection Command Set Entry command disables
reads and writes for the flash memory.

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—Password Program Command


The Password Program command permits programming the password that is
used as part of the hardware protection scheme. The actual password is 64-bits
long. There is no special addressing order required for programming the pass-
word. The password is programmed in 8-bit or 16-bit portions. Each portion
requires a Password Program Command.
Once the Password is written and verified, the Password Protection Mode Lock Bit
in the "Lock Register" must be programmed in order to prevent verification. The
Password Program command is only capable of programming "0"s. Programming
a "1" after a cell is programmed as a "0" results in a time-out by the Embedded
Program Algorithm™ with the cell remaining as a "0". The password is all F's
when shipped from the factory. All 64-bit password combinations are valid as a
password.

—Password Read Command


The Password Read command is used to verify the Password. The Password is
verifiable only when the Password Protection Mode Lock Bit in the "Lock Register"
is not programmed. If the Password Protection Mode Lock Bit in the "Lock Regis-
ter" is programmed and the user attempts to read the Password, the device will
always drive all F's onto the DQ data bus.
The lower two address bits (A1-A0) are valid during the Password Read, Password
Program, and Password Unlock. Writing a "1" to any other address bits (AMAX-
A2) will abort the Password Read, Password Program, and Password Unlock and
return the device to reading memory array. The address bits (A1-A0) must be
entered into the device sequentially for Password Read and Password Unlock.

—Password Unlock Command


The Password Unlock command is used to clear the PPB Lock Bit to the "unfreeze
state" so that the PPB bits can be modified. The exact password must be entered
in order for the unlocking function to occur. This 64-bit Password Unlock com-
mand sequence will take at least 1 µs to process each time to prevent a hacker
from running through the all 64-bit combinations in an attempt to correctly match
a password. If another password unlock is issued before the 64-bit password
check execution window is completed, the command will be ignored.
The Password Unlock function is accomplished by writing Password Unlock com-
mand and data to the device to perform the clearing of the PPB Lock Bit to the
"unfreeze state". The password is 64 bits long. A1 and A0 are used for matching.
Writing the Password Unlock command does not need to be address order spe-
cific. An example sequence is starting with the lower address A1-A0= 00,
followed by A1-A0= 01, A1-A0= 10, and A1-A0= 11.
Approximately 2 µs is required for unlocking the device after the valid 64-bit
password is given to the device. It is the responsibility of the microprocessor to
keep track of the entering the portions of the 64-bit password with the Password
Unlock command, the order, and when to read the PPB Lock bit to confirm suc-
cessful password unlock. In order to re-lock the device into the Password
Protection Mode, the PPB Lock Bit Set command can be re-issued.
The Password Protection Command Set Exit command must be issued after the
execution of the commands listed previously to reset the device to read mode.
Otherwise the device will hang.
Note that issuing the Password Protection Command Set Exit command re-en-
ables reads and writes for the flash memory.

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Non-Volatile Sector Protection Command Set Definitions


The Non-Volatile Sector Protection Command Set permits the user to program the
Persistent Protection Bits (PPB bits), erase all of the Persistent Protection Bits
(PPB bits), and read the logic state of the Persistent Protection Bits (PPB bits).
The Non-Volatile Sector Protection Command Set Entry command sequence must
be issued prior to any of the commands listed following to enable proper com-
mand execution.
Note that issuing the Non-Volatile Sector Protection Command Set Entry com-
mand disables reads and writes for the flash memory.

—PPB Program Command


The PPB Program command is used to program, or set, a given PPB bit. Each PPB
bit is individually programmed (but is bulk erased with the other PPB bits). The
specific sector address (A24-A16 for S29GL512N, A23-A16 for S29GL256N, A22-
A16 for S29GL128N) is written at the same time as the program command. If the
PPB Lock Bit is set to the "freeze state", the PPB Program command will not ex-
ecute and the command will time-out without programming the PPB bit.

—All PPB Erase Command


The All PPB Erase command is used to erase all PPB bits in bulk. There is no
means for individually erasing a specific PPB bit. Unlike the PPB program, no spe-
cific sector address is required. However, when the All PPB Erase command is
issued, all Sector PPB bits are erased in parallel. If the PPB Lock Bit is set to
"freeze state", the ALL PPB Erase command will not execute and the command
will time-out without erasing the PPB bits.
The device will preprogram all PPB bits prior to erasing when issuing the All PPB
Erase command. Also note that the total number of PPB program/erase cycles has
the same endurance as the flash memory array.

—PPB Status Read Command


The programming state of the PPB for a given sector can be verified by writing a
PPB Status Read Command to the device.
The Non-Volatile Sector Protection Command Set Exit command must be issued
after the execution of the commands listed previously to reset the device to read
mode.
Note that issuing the Non-Volatile Sector Protection Command Set Exit command
re-enables reads and writes for the flash memory.

Global Volatile Sector Protection Freeze Command Set


The Global Volatile Sector Protection Freeze Command Set permits the user to set
the PPB Lock Bit and reading the logic state of the PPB Lock Bit.
The Global Volatile Sector Protection Freeze Command Set Entry command se-
quence must be issued prior to any of the commands listed following to enable
proper command execution.
Note that issuing the Global Volatile Sector Protection Freeze Command Set Entry
command does not inhibit reads and writes for the flash memory outside of the
sector where the PPB Lock Bit was called.

—PPB Lock Bit Set Command


The PPB Lock Bit Set command is used to set the PPB Lock Bit to the "freeze state"
if it is cleared either at reset or if the Password Unlock command was successfully

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A d v a n c e I n f o r m a t i o n

executed. There is no PPB Lock Bit Clear command. Once the PPB Lock Bit is set
to the "freeze state", it cannot be cleared unless the device is taken through a
power-on clear (for Persistent Protection Mode) or the Password Unlock command
is executed (for Password Protection Mode). If the Password Protection Mode Lock
Bit is programmed, the PPB Lock Bit status is reflected as set to the "freeze state",
even after a power-on reset cycle.

—PPB Lock Bit Status Read Command


The programming state of the PPB Lock Bit can be verified by executing a PPB
Lock Bit Status Read command to the device.
The Global Volatile Sector Protection Freeze Command Set Exit command must
be issued after the execution of the commands listed previously to reset the de-
vice to read mode.

Volatile Sector Protection Command Set


The Volatile Sector Protection Command Set permits the user to set the Dynamic
Protection Bit (DYB) to the "protected state", clear the Dynamic Protection Bit
(DYB) to the "unprotected state", and read the logic state of the Dynamic Protec-
tion Bit (DYB).
The Volatile Sector Protection Command Set Entry command sequence must be
issued prior to any of the commands listed following to enable proper command
execution.
Note that issuing the Volatile Sector Protection Command Set Entry command
does not inhibit reads and writes for the flash memory outside of the sector where
the DYB bit was called.

—DYB Set Command


—DYB Status Read Command
The DYB Set and DYB Clear commands are used to protect or unprotect a DYB for
a given sector. The high order address bits (A24-A16 for S29GL512N, A23-A16
for S29GL256N, A22-A16 for S29GL128N) are issued at the same time as the
code 00h or 01h on DQ7-DQ0. All other DQ data bus pins are ignored during the
data write cycle. The DYB bits are modifiable at any time, regardless of the state
of the PPB bit or PPB Lock Bit. The DYB bits are cleared to the "unprotected state"
at power-up or hardware reset.

—DYB Clear Command


The programming state of the DYB bit for a given sector can be verified by writing
a DYB Status Read command to the device.
The Volatile Sector Protection Command Set Exit command must be issued after
the execution of the commands listed previously to reset the device to read
mode.

SecSi Sector Entry Command


The SecSi Sector Entry command allows the following commands to be executed

—Read from SecSi Sector


—Program to SecSi Sector
Once the SecSi Sector Entry Command is issued, the SecSi Sector Exit command
has to be issued to exit SecSi Sector Mode.

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A d v a n c e I n f o r m a t i o n

SecSi Sector Exit Command


The SecSi Sector Exit command may be issued to exit the SecSi Sector Mode.

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Command Definitions
Table 12. S29GL512N, S29GL256N, S29GL128N Command Definitions, x16
Bus Cycles (Notes 2–5)

Cycles
Command (Notes) First Second Third Fourth Fifth Sixth

Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data

Read (6) 1 RA RD

Reset (7) 1 XXX F0

Manufacturer ID 4 555 AA 2AA 55 555 90 X00 01


Autoselect (Note 8)

Note Note
Device ID 4 555 AA 2AA 55 555 90 X01 227E X0E X0F
17 17

XX00
(SA)
Sector Protect Verify 4 555 AA 2AA 55 555 90
X02
XX01

Note
Secure Device Verify (9) 4 555 AA 2AA 55 555 90 X03
10

CFI Query (11) 1 555 98

Program 4 555 AA 2AA 55 555 A0 PA PD

Write to Buffer 3 555 AA 2AA 55 SA 25 SA WC PA PD WBL PD

Program Buffer to Flash (confirm) 1 SA 29

Write-to-Buffer-Abort Reset (16) 3 555 AA 2AA 55 XXX F0

Unlock Bypass 3 555 AA 2AA 55 555 20

Unlock Bypass Program (12) 2 XXX A0 PA PD

Unlock Bypass Sector Erase (12) 2 XXX 80 SA 30

Unlock Bypass Chip Erase (12) 2 XXX 80 XXX 10

Unlock Bypass Reset (13) 2 XXX 90 XXX 00

Chip Erase 6 555 AA 2AA 55 555 80 555 AA 2AA 55 555 10

Sector Erase 6 555 AA 2AA 55 555 80 555 AA 2AA 55 SA 30

Erase Suspend/Program Suspend (14) 1 XXX B0

Erase Resume/Program Resume (15) 1 XXX 30

Sector Sector Command Definitions


SecSiTM SEctor

SecSi Sector Entry 3 555 AA 2AA 55 555 88

SecSi Sector Exit (18) 4 555 AA 2AA 55 555 90 XX 00

Lock Register Command Set Definitions


Lock Register Command Set Entry 3 555 AA 2AA 55 555 40
Lock Register

Lock Register Bits Program (22) 2 XXX A0 XXX Data

Lock Register Bits Read (22) 1 00 Data

Lock Register Command Set Exit (18, 23) 2 XXX 90 XXX 00

Password Protection Command Set Definitions

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Bus Cycles (Notes 2–5)

Cycles
Command (Notes) First Second Third Fourth Fifth Sixth

Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data

Password Protection Command Set Entry 3 555 AA 2AA 55 555 60

PWA PWD
Password Program (20) 2 XXX A0
x x

PWD PWD PWD PWD


Password Read (19) 4 XXX 01 02 03
Password

0 1 2 3

PWD PWD PWD PWD


00 25 00 03 00 01 02 03
0 1 2 3
Password Unlock (19) 7
00 29

Password Protection Command Set Exit (18,


2 XXX 90 XXX 00
23)

Non-Volatile Sector Protection Command Set Definitions


Nonvolatile Sector Protection Command Set
3 555 AA 2AA 55 555 C0
Entry

PPB Program (24, 25) 2 XXX A0 SA 00

All PPB Erase 2 XXX 80 00 30


PPB

RD
PPB Status Read (25) 1 SA
(0)

Non-Volatile Sector Protection Command Set


2 XXX 90 XXX 00
Exit (18)

Global Non-Volatile Sector Protection Freeze Command Set Definitions


Global Non-Volatile Sector Protection Freeze
3 555 AA 2AA 55 555 50
Command Set Entry
PPB Lock Bit

PPB Lock Bit Set (25) 2 XXX A0 XXX 00

RD
PPB Lock Status Read (25) 1 XXX
(0)

Global Non-Volatile Sector Protection Freeze


2 XXX 90 XXX 00
Command Set Exit (18)

Volatile Sector Protection Command Set Definitions


Volatile Sector Protection Command Set Entry 3 555 AA 2AA 55 555 E0

DYB Set (24, 25) 2 XXX A0 SA 00

DYB Clear (25) 2 XXX A0 SA 01


DYB

RD
DYB Status Read (25) 1 SA
(0)

Volatile Sector Protection Command Set Exit


2 XXX 90 XXX 00
(18)

Legend:

X = Don’t care

RA = Address of the memory to be read.

RD = Data read from location RA during read operation.

PA = Address of the memory location to be programmed. Addresses latch on the falling edge of the WE# or CE# pulse, whichever
happens later.

PD = Data to be programmed at location PA. Data latches on the rising edge of the WE# or CE# pulse, whichever happens first.

SA = Address of the sector to be verified (in autoselect mode) or erased. Address bits Amax–A16 uniquely select any sector.

WBL = Write Buffer Location. The address must be within the same write buffer page as PA.

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WC = Word Count is the number of write buffer locations to load minus 1.

PWD = Password

PWDx = Password word0, word1, word2, and word3.

DATA = Lock Register Contents: PD(0) = SecSi Sector Protection Bit, PD(1) = Persistent Protection Mode Lock Bit, PD(2) =
Password Protection Mode Lock Bit.
Notes:
1. See Table 1 for description of bus operations.
2. All values are in hexadecimal.
3. Except for the read cycle, and the 4th, 5th, and 6th cycle of the autoselect command sequence, all bus cycles are write
cycles.
4. Data bits DQ15-DQ8 are don't cares for unlock and command cycles.
5. Address bits AMAX:A16 are don't cares for unlock and command cycles, unless SA or PA required. (AMAX is the Highest
Address pin.).
6. No unlock or command cycles required when reading array data.
7. The Reset command is required to return to reading array data when device is in the autoselect mode, or if DQ5 goes high
(while the device is providing status data).
8. The fourth, fifth, and sixth cycle of the autoselect command sequence is a read cycle.
9. The data is 00h for an unprotected sector and 01h for a protected sector. See "Autoselect Command Sequence" for more
information. This is same as PPB Status Read except that the protect and unprotect statuses are inverted here.
10. The data value for DQ7 is "1" for a serialized and protected OTP region and "0" for an unserialized and unprotected
SecSi™Sector region. See "SecSi™Sector Flash Memory Region" for more information. For Am29LVxxxMH: XX18h/18h = Not
Factory Locked. XX98h/98h = Factory Locked. For Am29LVxxxML: XX08h/08h = Not Factory Locked. XX88h/88h = Factory
Locked.
11. Command is valid when device is ready to read array data or when device is in autoselect mode.
12. The Unlock-Bypass command is required prior to the Unlock-Bypass-Program command.
13. The Unlock-Bypass-Reset command is required to return to reading array data when the device is in the unlock bypass
mode.
14. The system may read and program/program suspend in non-erasing sectors, or enter the autoselect mode, when in the
Erase Suspend mode. The Erase Suspend command is valid only during a sector erase operation.
15. The Erase Resume/Program Resume command is valid only during the Erase Suspend/Program Suspend modes.
16. Issue this command sequence to return to READ mode after detecting device is in a Write-to-Buffer-Abort state. NOTE: the
full command sequence is required if resetting out of ABORT while using Unlock Bypass Mode.
17. S29GL512NH/L = 2223h/23h, 220h/01h; S29GL256NH/L = 2222h/22h, 2201h/01h; S29GL128NH/L = 2221h/21h, 2201h/
01h.
18. The Exit command returns the device to reading the array.
19. Note that the password portion can be entered or read in any order as long as the entire 64-bit password is entered or read.
20. For PWDx, only one portion of the password can be programmed per each "A0" command.
21. The All PPB Erase command embeds programming of all PPB bits before erasure.
22. All Lock Register bits are one-time programmable. Note that the program state = "0" and the erase state = "1". Also note
that of both the Persistent Protection Mode Lock Bit and the Password Protection Mode Lock Bit cannot be programmed at the
same time or the Lock Register Bits Program operation will abort and return the device to read mode. Lock Register bits that
are reserved for future use will default to "1's". The Lock Register is shipped out as "FFFF's" before Lock Register Bit
program execution.
23. If any of the Entry command was initiated, an Exit command must be issued to reset the device into read mode. Otherwise
the device will hang.
24. If ACC = VHH, sector protection will match when ACC = VIH
25. Protected State = "00h", Unprotected State = "01h".

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A d v a n c e I n f o r m a t i o n

Table 13. S29GL512N, S29GL256N, S29GL128N Command Definitions, x8


Bus Cycles (Notes 2–5)

Cycles
Command (Notes) First Second Third Fourth Fifth Sixth

Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data

Read (6) 1 RA RD

Reset (7) 1 XXX F0

Manufacturer ID 4 AAA AA 555 55 AAA 90 X00 01

Note Note
Device ID 4 AAA AA 555 55 AAA 9 X02 XX7E X1C X1E
17 17
Autoselect

00
(SA)
Sector Protect Verify 4 AAA AA 555 55 AAA 90
X04
01

Note
Secure Device Verify (9) 4 AAA AA 555 55 AAA 90 X06
10

CFI Query (11) 1 AAA 98

Program 4 AAA AA 555 55 AAA A0 PA PD

Write to Buffer 3 AAA AA 555 55 SA 25 SA WC PA PD WBL PD

Program Buffer to Flash (confirm) 1 SA 29

Write-to-Buffer-Abort Reset (16) 3 AAA AA PA 55 XXX F0

Unlock Bypass 3 AAA AA 555 55 AAA 20

Unlock Bypass Program (12) 2 XXX A0 PA PD

Unlock Bypass Sector Erase (12) 2 XXX 80 SA 30

Unlock Bypass Chip Erase (12) 2 XXX 80 XXX 10

Unlock Bypass Reset (13) 2 XXX 90 XXX 00

Chip Erase 6 AAA AA 555 55 AAA 80 AAA AA 555 55 AAA 10

Sector Erase 6 AAA AA 555 55 AAA 80 AAA AA 555 55 SA 30

Erase Suspend/Program Suspend (14) 1 XXX B0

Erase Resume/Program Resume (15) 1 XXX 30

Sector Sector Command Definitions


SecSiTM SEctor

SecSi Sector Entry 3 AAA AA 555 55 AAA 88

SecSi Sector Exit (18) 4 AAA AA 555 55 AAA 90 XX 00

Lock Register Command Set Definitions


Lock Register Command Set Entry 3 AAA AA 555 55 AAA 40
Lock Register

Lock Register Bits Program (22) 2 XXX A0 XXX Data

Lock Register Bits Read (22) 1 00 Data

Lock Register Command Set Exit (18, 23) 2 XXX 90 XXX 00

Password Protection Command Set Definitions

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Bus Cycles (Notes 2–5)

Cycles
Command (Notes) First Second Third Fourth Fifth Sixth

Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data

Password Protection Command Set Entry 3 AAA AA 555 55 AAA 60

PWA PWD
Password Program (20) 2 XXX A0
x x

PWD PWD
00 01
0 1
PWD PWD PWD PWD
Password Read (19) 8 02 03 04 05
Password

2 3 4 5
PWD PWD
06 07
6 7

PWD PWD PWD PWD


00 25 00 03 00 01 02 03
0 1 2 3
Password Unlock (19) 11
PWD PWD PWD PWD
04 05 06 07 00 29
4 5 6 7

Password Protection Command Set Exit (18,


2 XXX 90 XXX 00
23)

Non-Volatile Sector Protection Command Set Definitions


Nonvolatile Sector Protection Command Set
3 AAA AA 55 55 AAA C0
Entry

PPB Program (24, 25) 2 XXX A0 SA 00

All PPB Erase 2 XXX 80 00 30


PPB

RD
PPB Status Read (25) 1 SA
(0)

Non-Volatile Sector Protection Command Set


2 XXX 90 XXX 00
Exit (18)

Global Non-Volatile Sector Protection Freeze Command Set Definitions


Global Non-Volatile Sector Protection Freeze
3 AAA AA 555 55 AAA 50
Command Set Entry
PPB Lock Bit

PPB Lock Bit Set (25) 2 XXX A0 XXX 00

RD
PPB Lock Status Read (25) 1 XXX
(0)

Global Non-Volatile Sector Protection Freeze


2 XXX 90 XXX 00
Command Set Exit (18)

Volatile Sector Protection Command Set Definitions


Volatile Sector Protection Command Set Entry 3 AAA AA 555 55 AAA E0

DYB Set (24, 25) 2 XXX A0 SA 00

DYB Clear (25) 2 XXX A0 SA 01


DYB

RD
DYB Status Read (25) 1 SA
(0)

Volatile Sector Protection Command Set Exit


2 XXX 90 XXX 00
(18)

Legend:

X = Don’t care

RA = Address of the memory to be read.

RD = Data read from location RA during read operation.

PA = Address of the memory location to be programmed. Addresses latch on the falling edge of the WE# or CE# pulse, whichever
happens later.

PD = Data to be programmed at location PA. Data latches on the rising edge of the WE# or CE# pulse, whichever happens first.

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SA = Address of the sector to be verified (in autoselect mode) or erased. Address bits Amax–A16 uniquely select any sector.

WBL = Write Buffer Location. The address must be within the same write buffer page as PA.

WC = Word Count is the number of write buffer locations to load minus 1.

PWD = Password

PWDx = Password word0, word1, word2, word3. word 4, word 5, word 6, and word 7.

DATA = Lock Register Contents: PD(0) = SecSi Sector Protection Bit, PD(1) = Persistent Protection Mode Lock Bit, PD(2) =
Password Protection Mode Lock Bit.
Notes:
1. See Table 1 for description of bus operations.
2. All values are in hexadecimal.
3. Except for the read cycle, and the 4th, 5th, and 6th cycle of the autoselect command sequence, all bus cycles are write
cycles.
4. Data bits DQ15-DQ8 are don't cares for unlock and command cycles.
5. Address bits AMAX:A16 are don't cares for unlock and command cycles, unless SA or PA required. (AMAX is the Highest
Address pin.).
6. No unlock or command cycles required when reading array data.
7. The Reset command is required to return to reading array data when device is in the autoselect mode, or if DQ5 goes high
(while the device is providing status data).
8. The fourth, fifth, and sixth cycle of the autoselect command sequence is a read cycle.
9. The data is 00h for an unprotected sector and 01h for a protected sector. See "Autoselect Command Sequence" for more
information. This is same as PPB Status Read except that the protect and unprotect statuses are inverted here.
10. The data value for DQ7 is "1" for a serialized and protected OTP region and "0" for an unserialized and unprotected
SecSi™Sector region. See "SecSi™Sector Flash Memory Region" for more information. For Am29LVxxxMH: XX18h/18h = Not
Factory Locked. XX98h/98h = Factory Locked. For Am29LVxxxML: XX08h/08h = Not Factory Locked. XX88h/88h = Factory
Locked.
11. Command is valid when device is ready to read array data or when device is in autoselect mode.
12. The Unlock-Bypass command is required prior to the Unlock-Bypass-Program command.
13. The Unlock-Bypass-Reset command is required to return to reading array data when the device is in the unlock bypass
mode.
14. The system may read and program/program suspend in non-erasing sectors, or enter the autoselect mode, when in the
Erase Suspend mode. The Erase Suspend command is valid only during a sector erase operation.
15. The Erase Resume/Program Resume command is valid only during the Erase Suspend/Program Suspend modes.
16. Issue this command sequence to return to READ mode after detecting device is in a Write-to-Buffer-Abort state. NOTE: the
full command sequence is required if resetting out of ABORT while using Unlock Bypass Mode.
17. S29GL512NH/L = 2223h/23h, 220h/01h; S29GL256NH/L = 2222h/22h, 2201h/01h; S29GL128NH/L = 2221h/21h, 2201h/
01h.
18. The Exit command returns the device to reading the array.
19. Note that the password portion can be entered or read in any order as long as the entire 64-bit password is entered or read.
20. For PWDx, only one portion of the password can be programmed per each "A0" command.
21. The All PPB Erase command embeds programming of all PPB bits before erasure.
22. All Lock Register bits are one-time programmable. Note that the program state = "0" and the erase state = "1". Also note
that of both the Persistent Protection Mode Lock Bit and the Password Protection Mode Lock Bit cannot be programmed at the
same time or the Lock Register Bits Program operation will abort and return the device to read mode. Lock Register bits that
are reserved for future use will default to "1's". The Lock Register is shipped out as "FFFF's" before Lock Register Bit
program execution.
23. If any of the Entry command was initiated, an Exit command must be issued to reset the device into read mode. Otherwise
the device will hang.
24. If ACC = VHH, sector protection will match when ACC = VIH
Protected State = "00h", Unprotected State = "01h".

Write Operation Status


The device provides several bits to determine the status of a program or erase
operation: DQ2, DQ3, DQ5, DQ6, and DQ7. Table 19 and the following subsec-
tions describe the function of these bits. DQ7 and DQ6 each offer a method for
determining whether a program or erase operation is complete or in progress.

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A d v a n c e I n f o r m a t i o n

The device also provides a hardware-based output signal, RY/BY#, to determine


whether an Embedded Program or Erase operation is in progress or has been
completed.

DQ7: Data# Polling


The Data# Polling bit, DQ7, indicates to the host system whether an Embedded
Program or Erase algorithm is in progress or completed, or whether the device is
in Erase Suspend. Data# Polling is valid after the rising edge of the final WE#
pulse in the command sequence.
During the Embedded Program algorithm, the device outputs on DQ7 the com-
plement of the datum programmed to DQ7. This DQ7 status also applies to
programming during Erase Suspend. When the Embedded Program algorithm is
complete, the device outputs the datum programmed to DQ7. The system must
provide the program address to read valid status information on DQ7. If a pro-
gram address falls within a protected sector, Data# Polling on DQ7 is active for
approximately 1 µs, then the device returns to the read mode.
During the Embedded Erase algorithm, Data# Polling produces a “0” on DQ7.
When the Embedded Erase algorithm is complete, or if the device enters the
Erase Suspend mode, Data# Polling produces a “1” on DQ7. The system must
provide an address within any of the sectors selected for erasure to read valid
status information on DQ7.
After an erase command sequence is written, if all sectors selected for erasing
are protected, Data# Polling on DQ7 is active for approximately 100 µs, then the
device returns to the read mode. If not all selected sectors are protected, the Em-
bedded Erase algorithm erases the unprotected sectors, and ignores the selected
sectors that are protected. However, if the system reads DQ7 at an address within
a protected sector, the status may not be valid.
Just prior to the completion of an Embedded Program or Erase operation, DQ7
may change asynchronously with DQ0–DQ6 while Output Enable (OE#) is as-
serted low. That is, the device may change from providing status information to
valid data on DQ7. Depending on when the system samples the DQ7 output, it
may read the status or valid data. Even if the device has completed the program
or erase operation and DQ7 has valid data, the data outputs on DQ0–DQ6 may
be still invalid. Valid data on DQ0–DQ7 will appear on successive read cycles.
Table 14 shows the outputs for Data# Polling on DQ7. Figure 5 shows the Data#
Polling algorithm. Figure 17 in the AC Characteristics section shows the Data#
Polling timing diagram.

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A d v a n c e I n f o r m a t i o n

START

Read DQ15–DQ0
Addr = VA

Yes
DQ7 and DQ15
= Data?

No

No DQ5 and DQ13


= 1?

Yes

Read DQ15–DQ0
Addr = VA

Yes
DQ7 and DQ15
= Data?

No

FAIL PASS

Notes:
1. VA = Valid address for programming. During a sector
erase operation, a valid address is any sector address
within the sector being erased. During chip erase, a
valid address is any non-protected sector address.
2. DQ7 should be rechecked even if DQ5 = “1” because
DQ7 may change simultaneously with DQ5.

Figure 5. Data# Polling Algorithm

RY/BY#: Ready/Busy#
The RY/BY# is a dedicated, open-drain output pin which indicates whether an
Embedded Algorithm is in progress or complete. The RY/BY# status is valid after
the rising edge of the final WE# pulse in the command sequence. Since RY/BY#
is an open-drain output, several RY/BY# pins can be tied together in parallel with
a pull-up resistor to VCC.
If the output is low (Busy), the device is actively erasing or programming. (This
includes programming in the Erase Suspend mode.) If the output is high (Ready),
the device is in the read mode, the standby mode, or in the erase-suspend-read
mode. Table 14 shows the outputs for RY/BY#.

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A d v a n c e I n f o r m a t i o n

DQ6: Toggle Bit I


Toggle Bit I on DQ6 indicates whether an Embedded Program or Erase algorithm
is in progress or complete, or whether the device has entered the Erase Suspend
mode. Toggle Bit I may be read at any address, and is valid after the rising edge
of the final WE# pulse in the command sequence (prior to the program or erase
operation), and during the sector erase time-out.
During an Embedded Program or Erase algorithm operation, successive read cy-
cles to any address cause DQ6 to toggle. The system may use either OE# or CE#
to control the read cycles. When the operation is complete, DQ6 stops toggling.
After an erase command sequence is written, if all sectors selected for erasing
are protected, DQ6 toggles for approximately 100 µs, then returns to reading
array data. If not all selected sectors are protected, the Embedded Erase algo-
rithm erases the unprotected sectors, and ignores the selected sectors that are
protected.
The system can use DQ6 and DQ2 together to determine whether a sector is ac-
tively erasing or is erase-suspended. When the device is actively erasing (that is,
the Embedded Erase algorithm is in progress), DQ6 toggles. When the device en-
ters the Erase Suspend mode, DQ6 stops toggling. However, the system must
also use DQ2 to determine which sectors are erasing or erase-suspended. Alter-
natively, the system can use DQ7 (see the subsection on DQ7: Data# Polling).
If a program address falls within a protected sector, DQ6 toggles for approxi-
mately 1 µs after the program command sequence is written, then returns to
reading array data.
DQ6 also toggles during the erase-suspend-program mode, and stops toggling
once the Embedded Program algorithm is complete.
Table 14 shows the outputs for Toggle Bit I on DQ6. Figure 6 shows the toggle bit
algorithm. Figure 18 in the “AC Characteristics” section shows the toggle bit tim-

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A d v a n c e I n f o r m a t i o n

ing diagrams. Figure 19 shows the differences between DQ2 and DQ6 in graphical
form. See also the subsection on DQ2: Toggle Bit II.

START

Read DQ7–DQ0

Read DQ7–DQ0

Toggle Bit No
= Toggle?

Yes

No
DQ5 = 1?

Yes

Read DQ7–DQ0
Twice

Toggle Bit No
= Toggle?

Yes
Program/Erase
Operation Not Program/Erase
Complete, Write Operation Complete
Reset Command
Note:
The system should recheck the toggle bit even if DQ5 = “1”
because the toggle bit may stop toggling as DQ5 changes to
“1.” See the subsections on DQ6 and DQ2 for more
information.

Figure 6. Toggle Bit Algorithm

DQ2: Toggle Bit II


The “Toggle Bit II” on DQ2, when used with DQ6, indicates whether a particular
sector is actively erasing (that is, the Embedded Erase algorithm is in progress),
or whether that sector is erase-suspended. Toggle Bit II is valid after the rising
edge of the final WE# pulse in the command sequence.

80 S29GLxxxN MirrorBitTM Flash Family 27631A1 October 16, 2003


A d v a n c e I n f o r m a t i o n

DQ2 toggles when the system reads at addresses within those sectors that have
been selected for erasure. (The system may use either OE# or CE# to control the
read cycles.) But DQ2 cannot distinguish whether the sector is actively erasing or
is erase-suspended. DQ6, by comparison, indicates whether the device is actively
erasing, or is in Erase Suspend, but cannot distinguish which sectors are selected
for erasure. Thus, both status bits are required for sector and mode information.
Refer to Table 14 to compare outputs for DQ2 and DQ6.
Figure 6 shows the toggle bit algorithm in flowchart form, and the section “DQ2:
Toggle Bit II” explains the algorithm. See also the RY/BY#: Ready/Busy# subsec-
tion. Figure 18 shows the toggle bit timing diagram. Figure 19 shows the
differences between DQ2 and DQ6 in graphical form.

Reading Toggle Bits DQ6/DQ2


Refer to Figure 6 for the following discussion. Whenever the system initially be-
gins reading toggle bit status, it must read DQ7–DQ0 at least twice in a row to
determine whether a toggle bit is toggling. Typically, the system would note and
store the value of the toggle bit after the first read. After the second read, the
system would compare the new value of the toggle bit with the first. If the toggle
bit is not toggling, the device has completed the program or erase operation. The
system can read array data on DQ7–DQ0 on the following read cycle.
However, if after the initial two read cycles, the system determines that the toggle
bit is still toggling, the system also should note whether the value of DQ5 is high
(see the section on DQ5). If it is, the system should then determine again
whether the toggle bit is toggling, since the toggle bit may have stopped toggling
just as DQ5 went high. If the toggle bit is no longer toggling, the device has suc-
cessfully completed the program or erase operation. If it is still toggling, the
device did not completed the operation successfully, and the system must write
the reset command to return to reading array data.
The remaining scenario is that the system initially determines that the toggle bit
is toggling and DQ5 has not gone high. The system may continue to monitor the
toggle bit and DQ5 through successive read cycles, determining the status as de-
scribed in the previous paragraph. Alternatively, it may choose to perform other
system tasks. In this case, the system must start at the beginning of the algo-
rithm when it returns to determine the status of the operation (top of Figure 6).

DQ5: Exceeded Timing Limits


DQ5 indicates whether the program, erase, or write-to-buffer time has ex-
ceeded a specified internal pulse count limit. Under these conditions DQ5
produces a “1,” indicating that the program or erase cycle was not successfully
completed.
The device may output a “1” on DQ5 if the system tries to program a “1” to a
location that was previously programmed to “0.” Only an erase operation can
change a “0” back to a “1.” Under this condition, the device halts the opera-
tion, and when the timing limit has been exceeded, DQ5 produces a “1.”
In all these cases, the system must write the reset command to return the device
to the reading the array (or to erase-suspend-read if the device was previously
in the erase-suspend-program mode).

October 16, 2003 27631A1 S29GLxxxN MirrorBitTM Flash Family 81


A d v a n c e I n f o r m a t i o n

DQ3: Sector Erase Timer


After writing a sector erase command sequence, the system may read DQ3 to de-
termine whether or not erasure has begun. (The sector erase timer does not
apply to the chip erase command.) If additional sectors are selected for erasure,
the entire time-out also applies after each additional sector erase command.
When the time-out period is complete, DQ3 switches from a “0” to a “1.” If the
time between additional sector erase commands from the system can be as-
sumed to be less than 50 µs, the system need not monitor DQ3. See also the
Sector Erase Command Sequence section.
After the sector erase command is written, the system should read the status of
DQ7 (Data# Polling) or DQ6 (Toggle Bit I) to ensure that the device has accepted
the command sequence, and then read DQ3. If DQ3 is “1,” the Embedded Erase
algorithm has begun; all further commands (except Erase Suspend) are ignored
until the erase operation is complete. If DQ3 is “0,” the device will accept addi-
tional sector erase commands. To ensure the command has been accepted, the
system software should check the status of DQ3 prior to and following each sub-
sequent sector erase command. If DQ3 is high on the second status check, the
last command might not have been accepted.
Table 14 shows the status of DQ3 relative to the other status bits.

DQ1: Write-to-Buffer Abort


DQ1 indicates whether a Write-to-Buffer operation was aborted. Under these
conditions DQ1 produces a “1”. The system must issue the Write-to-Buffer-Abort-
Reset command sequence to return the device to reading array data. See Write
Buffersection for more details.

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A d v a n c e I n f o r m a t i o n

Table 14. Write Operation Status


DQ7 DQ5 DQ2 RY/
Status (Note 2) DQ6 (Note 1) DQ3 (Note 2) DQ1 BY#

Standard Embedded Program Algorithm DQ7# Toggle 0 N/A No toggle 0 0


Mode Embedded Erase Algorithm 0 Toggle 0 1 Toggle N/A 0

Program-Suspended
Program Program- Invalid (not allowed) 1
Sector
Suspend Suspend
Mode Read Non-Program
Data 1
Suspended Sector

Erase-Suspended
Erase- 1 No toggle 0 N/A Toggle N/A 1
Sector
Erase Suspend
Read Non-Erase
Suspend Data 1
Suspended Sector
Mode
Erase-Suspend-Program
DQ7# Toggle 0 N/A N/A N/A 0
(Embedded Program)

Write-to- Busy (Note 3) DQ7# Toggle 0 N/A N/A 0 0


Buffer Abort (Note 4) DQ7# Toggle 0 N/A N/A 1 0

Notes:
1. DQ5 switches to ‘1’ when an Embedded Program, Embedded Erase, or Write-to-Buffer operation has exceeded the
maximum timing limits. Refer to the section on DQ5 for more information.
2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for
further details.
3. The Data# Polling algorithm should be used to monitor the last loaded write-buffer address location.
4. DQ1 switches to ‘1’ when the device has aborted the write-to-buffer operation

October 16, 2003 27631A1 S29GLxxxN MirrorBitTM Flash Family 83


A d v a n c e I n f o r m a t i o n

ABSOLUTE MAXIMUM RATINGS


Storage Temperature, Plastic Packages . . . . . . . . . . . . . . . . –65°C to +150°C
Ambient Temperature with Power Applied . . . . . . . . . . . . . . –65°C to +125°C
Voltage with Respect to Ground:
VCC (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .–0.5 V to +4.0 V
VIO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.5 V to +4.0 V
A9, OE#, ACC and RESET# (Note 2) . . . . . . . . . . . . . –0.5 V to +12.5 V
All other pins (Note 1) . . . . . . . . . . . . . . . . . . . . –0.5 V to VCC+12.5 V
Output Short Circuit Current (Note 3)200 mA
Notes:
1. Minimum DC voltage on input or I/Os is –0.5 V. During voltage transitions, inputs
or I/Os may overshoot VSS to –2.0 V for periods of up to 20 ns. See Figure 7.
Maximum DC voltage on input or I/Os is VCC + 0.5 V. During voltage transitions,
input or I/O pins may overshoot to VCC + 2.0 V for periods up to 20 ns. See Figure
8.
2. Minimum DC input voltage on pins A9, OE#, ACC, and RESET# is –0.5 V. During
voltage transitions, A9, OE#, ACC, and RESET# may overshoot VSS to –2.0 V for
periods of up to 20 ns. See Figure 7. Maximum DC input voltage on pin A9, OE#,
ACC, and RESET# is +12.5 V which may overshoot to +14.0V for periods up to 20
ns.
3. No more than one output may be shorted to ground at a time. Duration of the short
circuit should not be greater than one second.
4. Stresses above those listed under “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress rating only; functional operation
of the device at these or any other conditions above those indicated in the
operational sections of this data sheet is not implied. Exposure of the device to
absolute maximum rating conditions for extended periods may affect device
reliability.

20 ns 20 ns 20 ns

+0.8 V VCC
+2.0 V
–0.5 V VCC
+0.5 V
–2.0 V
2.0 V
20 ns 20 ns 20 ns

Figure 7. Maximum Negative Figure 8. Maximum Positive


Overshoot Waveform Overshoot Waveform

Operating Ranges
Industrial (I) Devices
Ambient Temperature (TA) . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to +85°C
Supply Voltages
VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +2.7 V to +3.6 V
VIO (Note 2) . . . . . . . . . . . . . . . . . . . . +1.65 V to +1.95 V or +2.7 to 3.6 V
Notes:
1. Operating ranges define those limits between which the functionality of the device is guaranteed.
2. See Ordering Information section for valid VCC/VIO range combinations. The I/Os will not operate at 3 V when
VIO=1.8 V.

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A d v a n c e I n f o r m a t i o n

DC Characteristics
CMOS Compatible
Parameter Parameter Description
Test Conditions Min Typ Max Unit
Symbol (Notes)

VIN = VSS to VCC,


ILI Input Load Current (1) ±1.0 µA
VCC = VCC max

ILIT A9 Input Load Current VCC = VCC max; A9 = 12.5 V 35 µA

VOUT = VSS to VCC,


ILO Output Leakage Current ±1.0 µA
VCC = VCC max

VIO Active Read Current VIO = 1.8 V, CE# = VIL, OE# = VIL, WE# = VIL,
IIO1 5 10 µA
(Switching Current) f = 5 MHz

IIO2 VIO Non-Active Output CE# = VIL, OE# = VIH 0.2 10 mA

CE# = VIL, OE# = VIH, VCC = VCCmax,


25 30
f = 5 MHz, Byte Mode
ICC1 VCC Active Read Current (1) mA
CE# = VIL, OE# = VIH, VCC = VCCmax,
25 30
f = 5 MHz, Word Mode

ICC2 VCC Initial Page Read Current (1) CE# = VIL, OE# = VIH, VCC = VCCmax 50 60 mA

ICC3 VCC Intra-Page Read Current (1) CE# = VIL, OE# = VIH, VCC = VCCmax 10 20 mA

ICC4 VCC Active Erase/Program Current (2, 3) CE# = VIL, OE# = VIH, VCC = VCCmax 50 60 mA

CE#, RESET# = VSS ± 0.3 V, OE# = VIH,


ICC5 VCC Standby Current 1 5 µA
VCC = VCCmax

VCC = VCCmax;
ICC6 VCC Reset Current 1 5 µA
RESET# = VSS ± 0.3 V

VCC = VCCmax
VIH = VCC ± 0.3 V,
ICC7 Automatic Sleep Mode (4) 1 5 µA
VIL = VSS ± 0.3 V,
WP#/ACC = VIH

WP#/ACC
10 20
CE# = VIL, OE# = VIH, VCC = VCCmax, pin
IACC ACC Accelerated Program Current mA
WP#/ACC = VIH
VCC pin 30 60

VIL Input Low Voltage (5) –0.5 0.3 x VIO V

VIH Input High Voltage (5) 0.7 x VIO VIO + 0.3 V


Voltage for ACC Erase/Program
VHH VCC = 2.7 –3.6 V 11.5 12.5 V
Acceleration

Voltage for Autoselect and Temporary


VID VCC = 2.7 –3.6 V 11.5 12.5 V
Sector Unprotect

0.15 x
VOL Output Low Voltage (5) IOL = 100 µA
VIO
V

VOH Output High Voltage (5) IOH = 100 µA 0.85 x VIO V


VLKO Low VCC Lock-Out Voltage (3) 2.3 2.5 V

Notes:
1. The ICC current listed is typically less than TBD mA/MHz, with OE# at VIH.
2. ICC active while Embedded Erase or Embedded Program or Write Buffer Programming is in progress.
3. Not 100% tested.
4. Automatic sleep mode enables the lower power mode when addresses remain stable tor tACC + 30 ns.
5. VIO = 1.65–3.6 V
6. VCC = 3 V and VIO = 3V or 1.8V. When VIO is at 1.8V, I/O pins cannot operate at 3V.

October 16, 2003 27631A1 S29GLxxxN MirrorBitTM Flash Family 85


A d v a n c e I n f o r m a t i o n

Test Conditions

3.3 V
Table 15. Test Specifications

2.7 kΩ Test Condition All Speeds Unit


Device
Under Output Load 1 TTL gate
Test Output Load Capacitance, CL
30 pF
CL 6.2 kΩ (including jig capacitance)

Input Rise and Fall Times 5 ns

Input Pulse Levels 0.0–VIO V

Input timing measurement


0.5VIO V
reference levels (See Note)
Note: Diodes are IN3064 or equivalent. Output timing measurement
0.5 VIO V
Figure 9. Test Setup reference levels

Note: Diodes are IN3064 or equivalent

Note: If VIO < VCC, the reference level is 0.5 VIO.

Key to Switching Waveforms


WAVEFORM INPUTS OUTPUTS

Steady

Changing from H to L

Changing from L to H

Don’t Care, Any Change Permitted Changing, State Unknown

Does Not Apply Center Line is High Impedance State (High Z)

VIO
Input 0.5 VIO Measurement Level 0.5 VIO V Output
0.0 V

Note: If VIO < VCC, the input measurement reference level is 0.5 VIO.

Figure 10. Input Waveforms and


Measurement Levels

86 S29GLxxxN MirrorBitTM Flash Family 27631A1 October 16, 2003


A d v a n c e I n f o r m a t i o n

AC Characteristics
Read-Only Operations–S29GL512N Only
Parameter Speed Options

JEDEC Std. Description Test Setup 90 100 100 110 Unit

VIO = VCC = 3 V 90 100 ns


tAVAV
tRC Read Cycle Time VIO = 2.5 V, VCC = 3 V (Note 1) Min 100 110

VIO = 1.8 V, VCC = 3 V 100 110 ns

VIO = VCC = 3 V 90 100 ns


Address to Output Delay
tAVQV tACC VIO = 2.5 V, VCC = 3 V (Note 1) Max 100 110
(Note 2)
VIO = 1.8 V, VCC = 3 V 100 110 ns

VIO = VCC = 3 V 90 105 ns


Chip Enable to Output Delay
tELQV tCE VIO = 2.5 V, VCC = 3 V (Note 1) Max 100 110
(Note 3)
VIO = 1.8 V, VCC = 3 V 100 110 ns

tPAC
Page Access Time Max 25 25 35 35 ns
C

tGLQV tOE Output Enable to Output Delay Max 25 25 35 35 ns

tEHQZ tDF Chip Enable to Output High Z (Note 1) Max 20 ns

tGHQZ tDF Output Enable to Output High Z (Note 1) Max 20 ns

Output Hold Time From Addresses, CE#


tAXQX tOH Min 0 ns
or OE#, Whichever Occurs First
Read Min 0 ns
Output Enable Hold
tOEH Toggle and
Time (Note 1) Min 10 ns
Data# Polling

Notes:
1. Not 100% tested.
2. CE#, OE# = VIL
3. OE# = VIL
4. See Figure 9 and Table 15 for test specifications.
5. Unless otherwise indicated, AC specifications for 90 ns and 100 ns speed options are tested with VIO = VCC = 3 V. AC
specifications for 100 ns and 110 ns speed options are tested with VIO = 1.8 V and VCC = 3.0 V.

October 16, 2003 27631A1 S29GLxxxN MirrorBitTM Flash Family 87


A d v a n c e I n f o r m a t i o n

AC Characteristics
Read-Only Operations–S29GL256N Only
Parameter Speed Options

JEDEC Std. Description Test Setup 80 90 90 100 Unit

VIO = VCC = 3 V 80 90 ns

tAVAV tRC Read Cycle Time VIO = 2.5 V, VCC = 3 V (Note 1) Min 90 100

VIO = 1.8 V, VCC = 3 V 90 100 ns

VIO = VCC = 3 V 80 90 ns

tAVQV tACC Address to Output Delay (Note 2) VIO = 2.5 V, VCC = 3 V (Note 1) Max 90 100

VIO = 1.8 V, VCC = 3 V 90 100 ns

VIO = VCC = 3 V 80 90 ns
Chip Enable to Output Delay
tELQV tCE VIO = 2.5 V, VCC = 3 V (Note 1) Max 90 100
(Note 3)
VIO = 1.8 V, VCC = 3 V 90 100 ns

tPAC
Page Access Time Max 25 25 35 35 ns
C

tGLQV tOE Output Enable to Output Delay Max 25 25 35 35 ns

Chip Enable to Output High Z


tEHQZ tDF Max 20 ns
(Note 1)

Output Enable to Output High Z


tGHQZ tDF Max 20 ns
(Note 1)

Output Hold Time From Addresses,


tAXQX tOH CE# or OE#, Whichever Occurs Min 0 ns
First

Output Enable Read Min 0 ns


tOEH Hold Time Toggle and
(Note 1) Min 10 ns
Data# Polling

Notes:
1. Not 100% tested.
2. CE#, OE# = VIL
3. OE# = VIL
4. See Figure 9 and Table 15 for test specifications.
5. Unless otherwise indicated, AC specifications for 80 ns and 90 ns speed options are tested with VIO = VCC = 3 V. AC
specifications for 90 ns and 100 ns speed options are tested with VIO = 1.8 V and VCC = 3.0 V.

88 S29GLxxxN MirrorBitTM Flash Family 27631A1 October 16, 2003


A d v a n c e I n f o r m a t i o n

AC Characteristics
Read-Only Operations–S29GL128N Only
Parameter Speed Options

JEDEC Std. Description Test Setup 80 90 90 100 Unit

VIO = VCC = 3 V 80 90 ns

tAVAV tRC Read Cycle Time VIO = 2.5 V, VCC = 3 V (Note 1) Min 90 100

VIO = 1.8 V, VCC = 3 V 90 100 ns

VIO = VCC = 3 V 80 90 ns

tAVQV tACC Address to Output Delay (Note 2) VIO = 2.5 V, VCC = 3 V (Note 1) Max 90 100

VIO = 1.8 V, VCC = 3 V 90 100 ns


VIO = VCC = 3 V 80 90 ns

tELQV tCE Chip Enable to Output Delay (Note 3) VIO = 2.5 V, VCC = 3 V (Note 1) Max 90 100

VIO = 1.8 V, VCC = 3 V 90 100 ns

tPAC
Page Access Time Max 25 25 35 35 ns
C

tGLQV tOE Output Enable to Output Delay Max 25 25 35 35 ns

tEHQZ tDF Chip Enable to Output High Z (Note 1) Max 20 ns

tGHQZ tDF Output Enable to Output High Z (Note 1) Max 20 ns

Output Hold Time From Addresses, CE#


tAXQX tOH Min 0 ns
or OE#, Whichever Occurs First
Read Min 0 ns
Output Enable Hold
tOEH Toggle and
Time (Note 1) Min 10 ns
Data# Polling

Notes:
1. Not 100% tested.
2. CE#, OE# = VIL
3. OE# = VIL
4. See Figure 9 and Table 15 for test specifications.
5. Unless otherwise indicated, AC specifications for 80 ns and 90 ns speed options are tested with VIO = VCC = 3 V. AC
specifications for 90 ns and 100 ns speed options are tested with VIO = 1.8 V and VCC = 3.0 V.

October 16, 2003 27631A1 S29GLxxxN MirrorBitTM Flash Family 89


A d v a n c e I n f o r m a t i o n

AC Characteristics

tRC

Addresses Addresses Stable


tACC
CE#
tRH
tRH tDF
tOE
OE#
tOEH

WE# tCE
tOH
HIGH Z HIGH Z
Outputs Output Valid

RESET#

RY/BY#
0V

Figure 11. Read Operation Timings

A23-A2 Same Page

A1-A0* Aa Ab Ac Ad
tPACC tPACC tPACC
tACC
Data Bus Qa Qb Qc Qd

CE#

OE#

* Figure shows word mode. Addresses are A2–A-1 for byte mode.
Figure 12. Page Read Timings

90 S29GLxxxN MirrorBitTM Flash Family 27631A1 October 16, 2003


A d v a n c e I n f o r m a t i o n

AC Characteristics
Hardware Reset (RESET#)
Parameter

JEDEC Std. Description All Speed Options Unit

RESET# Pin Low (During Embedded Algorithms)


tReady Max 1 ms
to Read Mode (See Note)
RESET# Pin Low (NOT During Embedded
tReady Max 1 ms
Algorithms) to Read Mode (See Note)

tRP RESET# Pulse Width Min 1 ms

tRH Reset High Time Before Read (See Note) Min 50 ns

tRPD RESET# Low to Standby Mode Min 20 µs

tRB RY/BY# Recovery Time Min 0 ns

Note: Not 100% tested. If ramp rate is equal to or faster than 1V/100µs with a falling edge of the RESET# pin initiated,
the RESET# pin needs to be held low only for 100µs for power-up..

RY/BY#

CE#, OE#
tRH

RESET#

tRP
tReady

Reset Timings NOT during Embedded Algorithms

Reset Timings during Embedded Algorithms

tReady
RY/BY#

tRB

CE#, OE#

RESET#

tRP

Figure 13. Reset Timings

October 16, 2003 27631A1 S29GLxxxN MirrorBitTM Flash Family 91


A d v a n c e I n f o r m a t i o n

AC Characteristics
Erase and Program Operations–S29GL512N Only
Parameter Speed Options

JEDEC Std. Description 90 100 100 110 Unit

tAVAV tWC Write Cycle Time (Note 1) Min 90 100 100 110 ns

tAVWL tAS Address Setup Time Min 0 ns

Address Setup Time to OE# low during toggle


tASO Min 15 ns
bit polling

tWLAX tAH Address Hold Time Min 45 ns

Address Hold Time From CE# or OE# high


tAHT Min 0 ns
during toggle bit polling

tDVWH tDS Data Setup Time Min 45 ns

tWHDX tDH Data Hold Time Min 0 ns

tOEPH Output Enable High during toggle bit polling Min 20 ns

Read Recovery Time Before Write


tGHWL tGHWL Min 0 ns
(OE# High to WE# Low)

tELWL tCS CE# Setup Time Min 0 ns

tWHEH tCH CE# Hold Time Min 0 ns

tWLWH tWP Write Pulse Width Min 35 ns

tWHDL tWPH Write Pulse Width High Min 30 ns

Write Buffer Program Operation (Notes 2, 3) Typ TBD µs

Effective Write Buffer Program Per Byte Typ TBD µs


Operation (Notes 2, 4) Per Word Typ TBD µs

Accelerated Effective Write Buffer Per Byte Typ TBD µs

tWHWH1 tWHWH1 Program Operation (Notes 2, 4) Per Word Typ TBD µs

Byte Typ TBD µs


Program Operation (Note 2)
Word Typ TBD µs

Accelerated Programming Byte Typ TBD µs


Operation (Note 2) Word Typ TBD µs

tWHWH2 tWHWH2 Sector Erase Operation (Note 2) Typ TBD sec

tVHH VHH Rise and Fall Time (Note 1) Min 250 ns

tVCS VCC Setup Time (Note 1) Min 50 µs

Notes:
1. Not 100% tested.
2. See the “AC Characteristics” section for more information.
3. For 1–16 words/1–32 bytes programmed.
4. Effective write buffer specification is based upon a 16-word/32-byte write buffer operation.
5. Unless otherwise indicated, AC specifications for 90 ns and 100 ns speed options are tested with VIO = VCC = 3 V.
AC specifications for 100 ns and 110 ns speed options are tested with VIO = 1.8 V and VCC = 3.0 V.

92 S29GLxxxN MirrorBitTM Flash Family 27631A1 October 16, 2003


AC Characteristics
Erase and Program Operations–S29GL256N Only
Parameter Speed Options

JEDEC Std. Description 80 90 90 100 Unit

tAVAV tWC Write Cycle Time (Note 1) Min 80 90 90 100 ns

tAVWL tAS Address Setup Time Min 0 ns

Address Setup Time to OE# low during toggle


tASO Min 15 ns
bit polling

tWLAX tAH Address Hold Time Min 45 ns

Address Hold Time From CE# or OE# high


tAHT Min 0 ns
during toggle bit polling

tDVWH tDS Data Setup Time Min 45 ns

tWHDX tDH Data Hold Time Min 0 ns

tOEPH Output Enable High during toggle bit polling Min 20 ns

Read Recovery Time Before Write


tGHWL tGHWL Min 0 ns
(OE# High to WE# Low)

tELWL tCS CE# Setup Time Min 0 ns

tWHEH tCH CE# Hold Time Min 0 ns

tWLWH tWP Write Pulse Width Min 35 ns

tWHDL tWPH Write Pulse Width High Min 30 ns

Write Buffer Program Operation (Notes 2, 3) Typ TBD µs

Effective Write Buffer Program Per Byte Typ TBD µs


Operation (Notes 2, 4) Per Word Typ TBD µs

Accelerated Effective Write Buffer Per Byte Typ TBD µs


tWHWH1 tWHWH1 Program Operation (Notes 2, 4) Per Word Typ TBD µs

Byte Typ TBD µs


Program Operation (Note 2)
Word Typ TBD µs

Accelerated Programming Byte Typ TBD µs


Operation (Note 2) Word Typ TBD µs

tWHWH2 tWHWH2 Sector Erase Operation (Note 2) Typ TBD sec

tVHH VHH Rise and Fall Time (Note 1) Min 250 ns

tVCS VCC Setup Time (Note 1) Min 50 µs

Notes:
1. Not 100% tested.
2. See the “AC Characteristics” section for more information.
3. For 1–16 words/1–32 bytes programmed.
4. Effective write buffer specification is based upon a 16-word/32-byte write buffer operation.
5. Unless otherwise indicated, AC specifications for 80 ns and 90 ns speed options are tested with VIO = VCC = 3 V.
AC specifications for 90 ns and 100 ns speed options are tested with VIO = 1.8 V and VCC = 3.0 V.
A d v a n c e I n f o r m a t i o n

AC Characteristics
Erase and Program Operations–S29GL128N Only
Parameter Speed Options

JEDEC Std. Description 80 90 90 100 Unit

tAVAV tWC Write Cycle Time (Note 1) Min 80 90 90 100 ns

tAVWL tAS Address Setup Time Min 0 ns

Address Setup Time to OE# low during toggle


tASO Min 15 ns
bit polling

tWLAX tAH Address Hold Time Min 45 ns

Address Hold Time From CE# or OE# high


tAHT Min 0 ns
during toggle bit polling

tDVWH tDS Data Setup Time Min 45 ns

tWHDX tDH Data Hold Time Min 0 ns

tOEPH Output Enable High during toggle bit polling Min 20 ns

Read Recovery Time Before Write


tGHWL tGHWL Min 0 ns
(OE# High to WE# Low)

tELWL tCS CE# Setup Time Min 0 ns

tWHEH tCH CE# Hold Time Min 0 ns

tWLWH tWP Write Pulse Width Min 35 ns

tWHDL tWPH Write Pulse Width High Min 30 ns

Write Buffer Program Operation (Notes 2, 3) Typ TBD µs

Effective Write Buffer Program Per Byte Typ TBD µs


Operation (Notes 2, 4) Per Word Typ TBD µs

Accelerated Effective Write Buffer Per Byte Typ TBD µs

tWHWH1 tWHWH1 Program Operation (Notes 2, 4) Per Word Typ TBD µs

Byte Typ TBD µs


Program Operation (Note 2)
Word Typ TBD µs

Accelerated Programming Byte Typ TBD µs


Operation (Note 2) Word Typ TBD µs

tWHWH2 tWHWH2 Sector Erase Operation (Note 2) Typ TBD sec

tVHH VHH Rise and Fall Time (Note 1) Min 250 ns

tVCS VCC Setup Time (Note 1) Min 50 µs

Notes:
1. Not 100% tested.
2. See the “AC Characteristics” section for more information.
3. For 1–16 words/1–32 bytes programmed.
4. Effective write buffer specification is based upon a 16-word/32-byte write buffer operation.
5. Unless otherwise indicated, AC specifications for 80 ns and 90 ns speed options are tested with VIO = VCC = 3 V.
AC specifications for 90 ns and 100 ns speed options are tested with VIO = 1.8 V and VCC = 3.0 V.

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AC Characteristics
Program Command Sequence (last two cycles) Read Status Data (last two cycles)

tWC tAS
Addresses 555h PA PA PA
tAH

CE#
tCH

OE#

tWP tWHWH1

WE#
tWPH
tCS
tDS
tDH

Data A0A0h PD Status DOUT

tBUSY tRB

RY/BY#

VCC
tVCS

Notes:
1. PA = program address, PD = program data, DOUT is the true data at the program address.
2. Illustration shows device in word mode.

Figure 14. Program Operation Timings

VHH

VIL or VIH VIL or VIH


ACC
tVHH tVHH

Figure 15. Accelerated Program Timing Diagram

Notes:
1. Not 100% tested.
2. CE#, OE# = VIL
3. OE# = VIL
4. See Figure 9 and Table 15 for test specifications.

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A d v a n c e I n f o r m a t i o n

AC Characteristics

Erase Command Sequence (last two cycles) Read Status Data

tWC tAS
Addresses 2AAh SA VA VA
555h for chip erase
tAH
CE#

OE# tCH

tWP
WE#
tWPH tWHWH2
tCS
tDS
tDH
In
Data 5555h 3030h Progress Complete

10 for Chip Erase

tBUSY tRB

RY/BY#
tVCS
VCC

Notes:
1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see “Write Operation Status”.
2. These waveforms are for the word mode.
Figure 16. Chip/Sector Erase Operation Timings

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AC Characteristics
tRC
Addresses VA VA VA
tACC
tCE
CE#

tCH
tOE
OE#
tOEH tDF
WE#
tOH
High Z
DQ15 and DQ7 Complement Complement True Valid Data

High Z
DQ14–DQ8, DQ6–DQ0 Status Data Status Data True Valid Data

tBUSY

RY/BY#

Note: VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle,
and array data read cycle.
Figure 17. Data# Polling Timings
(During Embedded Algorithms)

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AC Characteristics

tAHT tAS
Addresses

tAHT
tASO
CE#
tCEPH
tOEH

WE#
tOEPH

OE#

tDH
tOE

DQ6 & DQ14/ Valid Data Valid Valid Valid Valid Data
Status Status Status
DQ2 & DQ10
(first read) (second read) (stops toggling)

RY/BY#

Note: VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command
sequence, last status read cycle, and array data read cycle
Figure 18. Toggle Bit Timings (During Embedded Algorithms)

Enter
Embedded Erase Enter Erase Erase
Erasing Suspend Suspend Program Resume
WE# Erase Erase Suspend Erase Erase Suspend Erase Erase
Read Suspend Read Complete
Program

DQ6

DQ2
Note: DQ2 toggles only when read at an address within an erase-suspended sector. The system may use OE#
or CE# to toggle DQ2 and DQ6.
Figure 19. DQ2 vs. DQ6

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AC Characteristics
Alternate CE# Controlled Erase and Program Operations–S29GL512N Only
Parameter Speed Options

JEDEC Std. Description 90 100 100 110 Unit

tAVAV tWC Write Cycle Time (Note 1) Min 90 100 100 110 ns

tAVWL tAS Address Setup Time Min 0 ns

tELAX tAH Address Hold Time Min 45 ns

tDVEH tDS Data Setup Time Min 45 ns

tEHDX tDH Data Hold Time Min 0 ns

Read Recovery Time Before Write


tGHEL tGHEL Min 0 ns
(OE# High to WE# Low)

tWLEL tWS WE# Setup Time Min 0 ns

tEHWH tWH WE# Hold Time Min 0 ns

tELEH tCP CE# Pulse Width Min 45 ns

tEHEL tCPH CE# Pulse Width High Min 30 ns

Write Buffer Program Operation (Notes 2,


Typ TBD µs
3)

Effective Write Buffer Per Byte Typ TBD µs


Program Operation (Notes
2, 4) Per Word Typ TBD µs

Effective Accelerated Write Per Byte Typ TBD µs


tWHWH1 tWHWH1 Buffer Program Operation
(Notes 2, 4) Per Word Typ TBD µs

Byte Typ TBD µs


Program Operation (Note 2)
Word Typ TBD µs

Accelerated Programming Byte Typ TBD µs


Operation (Note 2) Word Typ TBD µs

tWHWH2 tWHWH2 Sector Erase Operation (Note 2) Typ TBD sec

Notes:
1. Not 100% tested.
2. See the “AC Characteristics” section for more information.
3. For 1–16 words/1–32 bytes programmed.
4. Effective write buffer specification is based upon a 16-word/32-byte write buffer operation.
5. Unless otherwise indicated, AC specifications for 90 ns and 100 ns speed options are tested with VIO = VCC = 3 V.
AC specifications for 100 ns and 110 ns speed options are tested with VIO = 1.8 V and VCC = 3.0 V.

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AC Characteristics
Alternate CE# Controlled Erase and Program Operations–S29GL256N Only
Parameter Speed Options

JEDEC Std. Description 80 90 90 100 Unit

tAVAV tWC Write Cycle Time (Note 1) Min 80 90 90 100 ns

tAVWL tAS Address Setup Time Min 0 ns

tELAX tAH Address Hold Time Min 45 ns

tDVEH tDS Data Setup Time Min 45 ns

tEHDX tDH Data Hold Time Min 0 ns

Read Recovery Time Before Write


tGHEL tGHEL Min 0 ns
(OE# High to WE# Low)

tWLEL tWS WE# Setup Time Min 0 ns

tEHWH tWH WE# Hold Time Min 0 ns

tELEH tCP CE# Pulse Width Min 45 ns

tEHEL tCPH CE# Pulse Width High Min 30 ns

Write Buffer Program Operation (Notes 2,


Typ TBD µs
3)

Effective Write Buffer Per Byte Typ TBD µs


Program Operation (Notes
2, 4) Per Word Typ TBD µs

Effective Accelerated Write Per Byte Typ TBD µs


tWHWH1 tWHWH1 Buffer Program Operation
(Notes 2, 4) Per Word Typ TBD µs

Byte Typ TBD µs


Program Operation (Note 2)
Word Typ TBD µs

Accelerated Programming Byte Typ TBD µs


Operation (Note 2) Word Typ TBD µs

tWHWH2 tWHWH2 Sector Erase Operation (Note 2) Typ TBD sec

Notes:
1. Not 100% tested.
2. See the “AC Characteristics” section for more information.
3. For 1–16 words/1–32 bytes programmed.
4. Effective write buffer specification is based upon a 16-word/32-byte write buffer operation.
5. Unless otherwise indicated, AC specifications for 80 ns and 90 ns speed options are tested with VIO = VCC = 3 V. AC
specifications for 90 ns and 100 ns speed options are tested with VIO = 1.8 V and VCC = 3.0 V.

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AC Characteristics
Alternate CE# Controlled Erase and Program Operations–S29GL128N Only
Parameter Speed Options

JEDEC Std. Description 80 90 90 100 Unit

tAVAV tWC Write Cycle Time (Note 1) Min 80 90 90 100 ns

tAVWL tAS Address Setup Time Min 0 ns

tELAX tAH Address Hold Time Min 45 ns

tDVEH tDS Data Setup Time Min 45 ns

tEHDX tDH Data Hold Time Min 0 ns

Read Recovery Time Before Write


tGHEL tGHEL Min 0 ns
(OE# High to WE# Low)

tWLEL tWS WE# Setup Time Min 0 ns

tEHWH tWH WE# Hold Time Min 0 ns

tELEH tCP CE# Pulse Width Min 45 ns

tEHEL tCPH CE# Pulse Width High Min 30 ns

Write Buffer Program Operation (Notes 2,


Typ TBD µs
3)

Effective Write Buffer Per Byte Typ TBD µs


Program Operation (Notes
2, 4) Per Word Typ TBD µs

Effective Accelerated Write Per Byte Typ TBD µs


tWHWH1 tWHWH1 Buffer Program Operation
(Notes 2, 4) Per Word Typ TBD µs

Byte Typ TBD µs


Program Operation (Note 2)
Word Typ TBD µs

Accelerated Programming Byte Typ TBD µs


Operation (Note 2) Word Typ TBD µs

tWHWH2 tWHWH2 Sector Erase Operation (Note 2) Typ TBD sec

Notes:
1. Not 100% tested.
2. See the “AC Characteristics” section for more information.
3. For 1–16 words/1–32 bytes programmed.
4. Effective write buffer specification is based upon a 16-word/32-byte write buffer operation.
5. Unless otherwise indicated, AC specifications for 80 ns and 90 ns speed options are tested with VIO = VCC = 3 V. AC
specifications for 90 ns and 100 ns speed options are tested with VIO = 1.8 V and VCC = 3.0 V.

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A d v a n c e I n f o r m a t i o n

AC Characteristics
555 for program PA for program
2AA for erase SA for sector erase
555 for chip erase
Data# Polling

Addresses PA
tWC tAS
tAH
tWH
WE#
tGHEL
OE#
tCP tWHWH1 or 2

CE#
tWS tCPH
tBUSY
tDS
tDH
DQ7# DOUT
Data
tRH A0 for program PD for program
55 for erase 30 for sector erase
10 for chip erase

RESET#

RY/BY#

Notes:
1. Figure indicates last two bus cycles of a program or erase operation.
2. PA = program address, SA = sector address, PD = program data.
3. DQ7# is the complement of the data written to the device. DOUT is the data written to the device.
4. Waveforms are for the word mode.

Figure 20. Alternate CE# Controlled Write (Erase/Program)


Operation Timings

Latchup Characteristics
Description Min Max

Input voltage with respect to VSS on all pins except I/O pins
–1.0 V 12.5 V
(including A9, OE#, and RESET#)

Input voltage with respect to VSS on all I/O pins –1.0 V VCC + 1.0 V

VCC Current –100 mA +100 mA

Note: Includes all pins except VCC. Test conditions: VCC = 3.0 V, one pin at a time.

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Erase And Programming Performance


Typ Max
Parameter (Note 1) (Note 2) Unit Comments
Sector Erase Time TBD TBD sec Excludes 00h programming
Chip Erase Time TBD TBD sec prior to erasure (Note 5)

Effective Write Buffer Per Byte TBD TBD µs


Program Time (Note 3) Per Word TBD TBD µs

Byte TBD TBD µs


Program Time
Word TBD TBD µs
Excludes system level
Effective Accelerated Byte TBD TBD µs
overhead (Note 6)
Program Time (Note 3) Word TBD TBD µs

Byte TBD TBD µs


Accelerated Program Time
Word TBD TBD µs

Chip Program Time (Note 4) TBD TBD sec

Notes:
1. Typical program and erase times assume the following conditions: 25°C, 3.0 V VCC, 10,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90°C, VCC = 3.0 V, 100,000 cycles.
3. Effective write buffer specification is based upon a 16-word write buffer operation.
4. The typical chip programming time is considerably less than the maximum chip programming time listed, since most
words program faster than the maximum program times listed.
5. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.
6. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program
command. See Table 17 for further information on command definitions.

TSOP Pin and BGA Package Capacitance


Parameter Symbol Parameter Description Test Setup Typ Max Unit

TSOP 6 7.5 pF
CIN Input Capacitance VIN = 0
Fine-pitch BGA 4.2 5.0 pF
TSOP 8.5 12 pF
COUT Output Capacitance VOUT = 0
Fine-pitch BGA 5.4 6.5 pF

TSOP 7.5 9 pF
CIN2 Control Pin Capacitance VIN = 0
Fine-pitch BGA 3.9 4.7 pF

Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.

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Physical Dimensions
TS056/TSR056—56-Pin Standard/Reverse Thin Small Outline Package (TSOP)

NOTES:
PACKAGE TS/TSR 56
JEDEC MO-142 (B) EC 1 CONTROLLING DIMENSIONS ARE IN MILLIMETERS (mm).
SYMBOL MIN. NOM. MAX. (DIMENSIONING AND TOLERANCING CONFORMS TO ANSI Y14.5M-1982.)
A --- --- 1.20 2 PIN 1 IDENTIFIER FOR STANDARD PIN OUT (DIE UP).
A1 0.05 --- 0.15 3 PIN 1 IDENTIFIER FOR REVERSE PIN OUT (DIE DOWN), INK OR LASER MARK.
A2 0.95 1.00 1.05 4 TO BE DETERMINED AT THE SEATING PLANE -C- . THE SEATING PLANE IS
b1 0.17 0.20 0.23 DEFINED AS THE PLANE OF CONTACT THAT IS MADE WHEN THE PACKAGE
LEADS ARE ALLOWED TO REST FREELY ON A FLAT HORIZONTAL SURFACE.
b 0.17 0.22 0.27
5 DIMENSIONS D1 AND E DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE
c1 0.10 --- 0.16
MOLD PROTUSION IS 0.15 mm PER SIDE.
c 0.10 --- 0.21
6 DIMENSION b DOES NOT INCLUDE DAMBAR PROTUSION. ALLOWABLE
D 19.90 20.00 20.20 DAMBAR PROTUSION SHALL BE 0.08 mm TOTAL IN EXCESS OF b
D1 18.30 18.40 18.50 DIMENSION AT MAX MATERIAL CONDITION. MINIMUM SPACE BETWEEN
PROTRUSION AND AN ADJACENT LEAD TO BE 0.07 mm.
E 13.90 14.00 14.10
7 THESE DIMESIONS APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN
e 0.50 BASIC
0.10 mm AND 0.25 mm FROM THE LEAD TIP.
L 0.50 0.60 0.70
8. LEAD COPLANARITY SHALL BE WITHIN 0.10 mm AS MEASURED FROM THE
O 0˚ 3˚ 5˚ SEATING PLANE.
R 0.08 --- 0.20 9 DIMENSION "e" IS MEASURED AT THE CENTERLINE OF THE LEADS.
N 56
3160\38.10A

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Physical Dimensions
LAA064—64-Ball Fortified Ball Grid Array (FBGA)

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Revision Summary
Revision A (September 2, 2003)
Initial Release.

Revision A+1 (October 16, 2003)


Global
Added LAA064 package.
Distinctive Characteristics, Performance Characteristics
Clarified fifth bullet information.
Added RTSOP to Package Options.
Distinctive Characteristics, Software and Hardward Features
Clarified “Password Sector Protection” to “Advanced Sector Protection”
Connection Diagrams
Removed Note.
Ordering Information
Modified Package codes
Device Bus Operations, Table 1
Modified Table, removed Note.
Sector Address Tables
All address ranges doubled in all sector address tables.
Sector Protection
Lock Register: Corrected text to reflect 3 bits instead of 4.
Table 6, Lock Register: Corrected address range from DQ15-5 to DQ15-3; re-
moved DQ4 and DQ3; Corrected DQ15-3 Lock Register to Don’t Care.
Table 7, Sector Protection Schemes: Corrected Sector States.
Command Definitions
Table 12, Command Definitions, x16
Nonvolatile Sector Protection Command Set Entry Second Cycle Address cor-
rected from 55 to 2AA.
Legend: Clarified PWDx, DATA
Notes: Clarified Note 19.
Table 13, Command Definitions, x8
Password Read and Unlock Addresses and Data corrected.
Legend: Clarified PWDx, DATA
Notes: Clarified Note 19.
Test Conditions
Table 15, Test Specifications and Figure 10, Input Waveforms and Measurement
Levels: Corrected Input Pulse Levels to 0.0–VIO; corrected Input timing mea-
surement reference levels to 0.5VIO.

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Trademarks and Notice

Copyright © 2003 FASL LLC. All rights reserved.


Spansion, the Spansion logo, MirrorBit, and combinations thereof are registered trademarks of FASL LLC.
ExpressFlash is a trademark of FASL LLC.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.

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108 S29GLxxxN MirrorBitTM Flash Family 27631A1 October 16, 2003

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