Technische Information / Technical Information

IGBT-Module
IGBT-Modules BSM300GAL120DLC

Höchstzulässige Werte / Maximum rated values

Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
VCES 1200 V
collector-emitter voltage

Kollektor-Dauergleichstrom TC = 80 °C IC,nom. 300 A

DC-collector current TC = 25 °C IC 625 A

Periodischer Kollektor Spitzenstrom

tP = 1 ms, T C = 80°C ICRM 600 A
repetitive peak collector current
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Gesamt-Verlustleistung
TC=25°C, Transistor Ptot 2,5 kW
total power dissipation

Gate-Emitter-Spitzenspannung
VGES +/- 20V V
gate-emitter peak voltage

Dauergleichstrom
IF 300 A
DC forward current

Periodischer Spitzenstrom
tP = 1 ms IFRM 600 A
repetitive peak forw. current

Grenzlastintegral der Diode

VR = 0V, t p = 10ms, T Vj = 125°C I2t 19 kA2s
I2t - value, Diode

Isolations-Prüfspannung
RMS, f = 50 Hz, t = 1 min. VISOL 2,5 kV
insulation test voltage

Charakteristische Werte / Characteristic values

Transistor / Transistor min. typ. max.
Kollektor-Emitter Sättigungsspannung IC = 300A, V GE = 15V, Tvj = 25°C VCE sat - 2,1 2,6 V
collector-emitter saturation voltage IC = 300A, V GE = 15V, Tvj = 125°C - 2,4 2,9 V

Gate-Schwellenspannung
IC = 12mA, VCE = VGE, Tvj = 25°C VGE(th) 4,5 5,5 6,5 V
gate threshold voltage

Gateladung
VGE = -15V...+15V QG - 3,2 - µC
gate charge

Eingangskapazität
f = 1MHz,Tvj = 25°C,V CE = 25V, VGE = 0V Cies - 21 - nF
input capacitance

Rückwirkungskapazität
f = 1MHz,Tvj = 25°C,V CE = 25V, VGE = 0V Cres - 1,4 - nF
reverse transfer capacitance

Kollektor-Emitter Reststrom VCE = 1200V, VGE = 0V, Tvj = 25°C ICES - 8 360 µA
collector-emitter cut-off current VCE = 1200V, VGE = 0V, Tvj = 125°C - 800 - µA

Gate-Emitter Reststrom
VCE = 0V, VGE = 20V, Tvj = 25°C IGES - - 350 nA
gate-emitter leakage current

prepared by: Mark Münzer date of publication: 07.02.2000

approved by: H. Hierholzer revision: 2

1(8) Seriendatenblatt_BSM300GAL120DLC.xls
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IGBT-Module
IGBT-Modules BSM300GAL120DLC

Charakteristische Werte / Characteristic values

Transistor / Transistor min. typ. max.
Einschaltverzögerungszeit (ind. Last) IC = 300A, V CE = 600V
turn on delay time (inductive load) VGE = ±15V, R G = 3,3Ω, Tvj = 25°C td,on - 0,05 - µs

VGE = ±15V, R G = 3,3Ω, Tvj = 125°C - 0,06 - µs

Anstiegszeit (induktive Last) IC = 300A, V CE = 600V

rise time (inductive load) VGE = ±15V, R G = 3,3Ω, Tvj = 25°C tr - 0,05 - µs

www.DataSheet4U.com VGE = ±15V, R G = 3,3Ω, Tvj = 125°C - 0,07 - µs

Abschaltverzögerungszeit (ind. Last) IC = 300A, V CE = 600V

turn off delay time (inductive load) VGE = ±15V, R G = 3,3Ω, Tvj = 25°C td,off - 0,57 - µs

VGE = ±15V, R G = 3,3Ω, Tvj = 125°C - 0,57 - µs

Fallzeit (induktive Last) IC = 300A, V CE = 600V

fall time (inductive load) VGE = ±15V, R G = 3,3Ω, Tvj = 25°C tf - 0,04 - µs

VGE = ±15V, R G = 3,3Ω, Tvj = 125°C - 0,05 - µs

Einschaltverlustenergie pro Puls IC = 300A, V CE = 600V, VGE = 15V

turn-on energy loss per pulse RG = 3,3Ω, Tvj = 125°C, LS = 60nH Eon - 35 - mWs

Abschaltverlustenergie pro Puls IC = 300A, V CE = 600V, VGE = 15V

turn-off energy loss per pulse RG = 3,3Ω, Tvj = 125°C, LS = 60nH Eoff - 36 - mWs

Kurzschlußverhalten tP ≤ 10µsec, V GE ≤ 15V, R G = 3,3Ω

SC Data TVj≤125°C, VCC=900V, VCEmax=VCES -LsCE ·dI/dt ISC - 1800 - A

Modulinduktivität
LsCE - 25 - nH
stray inductance module

Modul Leitungswiderstand, Anschlüsse – Chip

TC=25°C RCC‘+EE‘ - 0,20 - mΩ
module lead resistance, terminals – chip

Charakteristische Werte / Characteristic values

Diode / Diode min. typ. max.
Durchlaßspannung IF = 300A, V GE = 0V, Tvj = 25°C VF - 1,8 2,3 V
forward voltage IF = 300A, V GE = 0V, Tvj = 125°C - 1,7 2,2 V

Rückstromspitze IF = 300A, - di F/dt = 5400A/µsec

peak reverse recovery current VR = 600V, VGE = -15V, T vj = 25°C IRM - 348 - A

VR = 600V, VGE = -15V, T vj = 125°C - 420 - A

Sperrverzögerungsladung IF = 300A, - di F/dt = 5400A/µsec

recovered charge VR = 600V, VGE = -15V, T vj = 25°C Qr - 28 - µAs

VR = 600V, VGE = -15V, T vj = 125°C - 58 - µAs

Abschaltenergie pro Puls IF = 300A, - di F/dt = 5400A/µsec

reverse recovery energy VR = 600V, VGE = -15V, T vj = 25°C Erec - 9 - mWs

VR = 600V, VGE = -15V, T vj = 125°C - 21 - mWs

2(8) Seriendatenblatt_BSM300GAL120DLC.xls
 Technische Information / Technical Information
IGBT-Module
IGBT-Modules BSM300GAL120DLC

Thermische Eigenschaften / Thermal properties

min. typ. max.
Innerer Wärmewiderstand Transistor / transistor, DC RthJC - - 0,05 K/W
thermal resistance, junction to case Diode/Diode, DC - - 0,125 K/W

Übergangs-Wärmewiderstand pro Modul / per module

RthCK - 0,01 - K/W
thermal resistance, case to heatsink λ Παστε = 1 W/m * K / λ grease = 1 W/m * K

Höchstzulässige Sperrschichttemperatur
Tvj - - 150 °C
maximum junction temperature
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Betriebstemperatur
Top -40 - 125 °C
operation temperature

Lagertemperatur
Tstg -40 - 150 °C
storage temperature

Mechanische Eigenschaften / Mechanical properties

Gehäuse, siehe Anlage

case, see appendix

Innere Isolation
AL2O3
internal insulation

Kriechstrecke
20 mm
creepage distance

Luftstrecke
11 mm
clearance

CTI
275
comperative tracking index

Anzugsdrehmoment f. mech. Befestigung M1 3 6 Nm

mounting torque

Anzugsdrehmoment f. elektr. Anschlüsse terminals M6 M2 2,5 5 Nm

terminal connection torque

Gewicht
G 420 g
weight

Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert.
Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen.

This technical information specifies semiconductor devices but promises no characteristics. It is

valid in combination with the belonging technical notes.

3(8) Seriendatenblatt_BSM300GAL120DLC.xls
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IGBT-Module
IGBT-Modules BSM300GAL120DLC

Ausgangskennlinie (typisch) I
C = f (VCE)
Output characteristic (typical) V GE = 15V

600

500
Tj = 25°C
Tj = 125°C

400
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IC [A]

300

200

100

0
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0

VCE [V]

Ausgangskennlinienfeld (typisch) I
C = f (VCE)
Output characteristic (typical) T vj = 125°C

600

500 VGE = 17V

VGE = 15V
VGE = 13V
400 VGE = 11V
VGE = 9V
IC [A]

VGE = 7V
300

200

100

0
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0

VCE [V]

4(8) Seriendatenblatt_BSM300GAL120DLC.xls
 Technische Information / Technical Information
IGBT-Module
IGBT-Modules BSM300GAL120DLC

Übertragungscharakteristik (typisch) IC = f (VGE)

Transfer characteristic (typical) VCE = 20V

600

500 Tj = 25°C
Tj = 125°C

400
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IC [A]

300

200

100

0
5 6 7 8 9 10 11 12

VGE [V]

Durchlaßkennlinie der Inversdiode (typisch) I

F = f (VF)
Forward characteristic of inverse diode (typical)

600

500 Tj = 25°C
Tj = 125°C

400
IF [A]

300

200

100

0
0,0 0,5 1,0 1,5 2,0 2,5 3,0

VF [V]

5(8) Seriendatenblatt_BSM300GAL120DLC.xls
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IGBT-Module
IGBT-Modules BSM300GAL120DLC

Schaltverluste (typisch) Eon = f (IC) , Eoff = f (IC) , Erec = f (IC)

Switching losses (typical) VGE=15V, Rgon = R goff =3,3 Ω, VCE = 600V, T j = 125°C
100

90 Eoff
Eon
80
Erec

70
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E [mJ]

60

50

40

30

20

10

0
0 100 200 300 400 500 600
IC [A]

Schaltverluste (typisch) Eon = f (RG) , Eoff = f (RG) , Erec = f (RG)

Switching losses (typical) VGE=15V , I C = 300A , V CE = 600V , T j = 125°C

160

140 Eoff
Eon
Erec
120

100
E [mJ]

80

60

40

20

0
2 4 6 8 10 12 14 16 18 20 22

RG [Ω]

6(8) Seriendatenblatt_BSM300GAL120DLC.xls
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IGBT-Module
IGBT-Modules BSM300GAL120DLC

Transienter Wärmewiderstand ZthJC = f (t)

Transient thermal impedance
1

0,1
[K / W]
ZthJC

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0,01 Zth:Diode
Zth:IGBT

0,001
0,001 0,01 0,1 1 10 100

t [sec]

i 1 2 3 4
ri [K/kW] : IGBT 22,27 16,95 10,76 0,02
τi [sec] : IGBT 0,006 0,029 0,043 1,014
ri [K/kW] : Diode 34,12 50,84 26,33 13,71
τi [sec] : Diode 0,006 0,035 0,033 0,997

Sicherer Arbeitsbereich (RBSOA)

Reverse bias safe operation area (RBSOA) VGE = 15V, R g = 3,3 Ohm, T vj = 125°C

700

600

500
IC [A]

400 IC,Modul
IC,Chip

300

200

100

0
0 200 400 600 800 1000 1200 1400

VCE [V]

7(8) Seriendatenblatt_BSM300GAL120DLC.xls
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IGBT-Module
IGBT-Modules BSM300GAL120DLC

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8(8) Seriendatenblatt_BSM300GAL120DLC.xls