Location via proxy:   [ UP ]  
[Report a bug]   [Manage cookies]                

AP4310

Download as pdf or txt
Download as pdf or txt
You are on page 1of 11

Preliminary Datasheet

DUAL OP AMP AND VOLTAGE REFERENCE AP4310


General Description Features

The AP4310 is a monolithic IC specifically designed Op Amp


to regulate the output current and voltage levels of · Input Offset Voltage: 0.5mV
switching battery chargers and power supplies. · Supply Current: 75µA per Op Amp at 5.0V Sup-
ply Voltage
The device contains two Op Amps and a 2.5V preci- · Unity Gain Bandwidth: 1MHz
sion shunt voltage reference. Op Amp 1 is designed for
· Output Voltage Swing: 0 to (VCC - 1.5) V
voltage control with its non-inverting input internally
connects to the output of the shunt regulator. Op Amp · Power Supply Range: 3 to 36V
2 is for current control with both inputs uncommitted.
The IC offers the power converter designer a control Voltage Reference
solution that features increased precision with a corre- · Fixed Output Voltage Reference: 2.5V
sponding reduction in system complexity and cost. · Voltage Tolerance: ± 0.4%, ± 1%
· Sink Current Capability: 0.05 to 80mA
The AP4310 is available in standard packages of DIP- · Typical Output Impedance: 0.2Ω
8 and SOIC-8.

Applications

· Battery Charger
· Switching Power Supply

SOIC-8 DIP-8

Figure 1. Package Types of AP4310

Apr. 2005 Rev. 1. 2 BCD Semiconductor Manufacturing Limited

1
Preliminary Datasheet

DUAL OP AMP AND VOLTAGE REFERENCE AP4310


Pin Configuration

M Package/P Package
(SOIC-8/DIP-8)

OUTPUT 1 1 8 VCC

INPUT 1- 2 7 OUTPUT 2

INPUT 1+ / VKA 3 6 INPUT 2-

GND 4 5 INPUT 2+

Top View

Figure 2. Pin Configuration of AP4310

Functional Block Diagram

OUTPUT 1 1 8 VCC
Op
Amp 1
- +
INPUT 1- 2 7 OUTPUT 2

+ -
INPUT 1+ / VKA 3 6 INPUT 2-
Op
Amp 2

GND 4 5 INPUT 2+

Figure 3. Functional Block Diagram of AP4310

Apr. 2005 Rev. 1. 2 BCD Semiconductor Manufacturing Limited

2
Preliminary Datasheet

DUAL OP AMP AND VOLTAGE REFERENCE AP4310


Ordering Information

AP4310 -

E1: Lead Free


Blank: Tin Lead
Circuit Type
TR: Tape and Reel
Blank: Tube

Voltage Tolerance Package


A: ± 0.4% M: SOIC-8
Blank: ± 1% P: DIP-8

Reference Voltage Tempera- Part Number Marking ID Packing


Package
Voltage Tolerance ture Range Tin Lead Lead Free Tin Lead Lead Free Type

± 0.4% AP4310AP AP4310AP-E1 AP4310AP AP4310AP-E1


DIP-8 2.5V -40 to105oC Tube
± 1% AP4310P AP4310P-E1 AP4310P AP4310P-E1

± 0.4% -40 to105oC AP4310AM AP4310AM-E1 4310AM AP4310AM-E1 Tube


AP4310AMTR AP4310AMTR-E1 4310AM AP4310AM-E1 Tape & Reel
SOIC-8 2.5V
± 1% -40 to105oC AP4310M AP4310M-E1 4310M AP4310M-E1 Tube
AP4310MTR AP4310MTR-E1 4310M AP4310M-E1 Tape & Reel

BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.

Apr. 2005 Rev. 1. 2 BCD Semiconductor Manufacturing Limited

3
Preliminary Datasheet

DUAL OP AMP AND VOLTAGE REFERENCE AP4310


Absolute Maximum Ratings (Note 1)

Parameter Symbol Value Unit


Power Supply Voltage (VCC to GND) VCC 40 V
Op Amp 1 and 2 Input Voltage Range (Pins 2, 5, 6) VIN - 0.3 to VCC + 0.3 V
Op Amp 2 Input Differential Voltage (Pins 5, 6) VID 40 V
Voltage Reference Cathode Current (Pin 3) IK 100 mA
Power Dissipation PD DIP-8 800 mW
SOIC-8 500
Storage Temperature Range TSTG -65 to 150 oC

ESD Protection Voltage (Human Body Model) ≥ 2000 V

Note 1: Stresses greater than those listed under "Absolute Maximum Ratings " may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Max-
imum Ratings " for extended periods may affect device reliability.

Recommended Operating Conditions

Parameter Min Max Unit

Supply Voltage 3 36 V

Ambient Temperature -40 105 o


C

Apr. 2005 Rev. 1. 2 BCD Semiconductor Manufacturing Limited

4
Preliminary Datasheet

DUAL OP AMP AND VOLTAGE REFERENCE AP4310


Electrical Characteristics
Operating Conditions: VCC = +5V, TA= 25oC unless otherwise specified.

Parameter Conditions Min Typ Max Unit


Total Supply Current, excluding Cur- V = 5V, no load, -40oC ≤T ≤105oC 0.15 0.25 mA
CC A
rent in Voltage Reference
VCC = 30V, no load, -40oC ≤TA ≤105oC 0.20 0.30

Voltage Reference Section


AP4310A TA = 25oC 2.49 2.50 2.51 V

Reference Voltage IK = 10mA -40oC ≤TA ≤105oC 2.48 2.50 2.52

AP4310 TA = 25oC 2.475 2.50 2.525 V

-40oC ≤TA ≤105oC 2.45 2.50 2.55

Reference Voltage Deviation IK = 10mA, TA = -40 to 105oC 5 24 mV


Over Full Temperature Range
Minimum Cathode Current 0.01 0.05 mA
for Regulation
Dynamic Impedance IK = 1.0 to 80mA, f<1kHz 0.2 0.5 Ω

Op Amp 1 Section (VCC = 5V, VO = 1.4V, TA = 25oC, unless otherwise noted)


Input Offset Voltage TA = 25oC 0.5 3 mV

TA = -40 to 105oC 5

Input Offset Voltage TA = -40 to 105oC 7 µV/ oC


Temperature Drift
Input Bias Current (Inverting Input T = 25oC 20 150 nA
A
Only)
Large Signal Voltage Gain VCC = 15V, RL = 2KΩ, VO = 1.4 to 11.4V 85 100 dB

Power Supply Rejection Ratio VCC = 5 to 30V 70 90 dB

Output Current Source VCC = 15V, VID = 1V, VO =2V 20 40 mA

Sink VCC = 15V, VID = -1V, VO = 2V 7 20 mA

Output Voltage Swing (High) VCC = 30V, RL = 10KΩ, VID = 1V 27 28 V

Output Voltage Swing (Low) VCC = 30V, RL = 10KΩ, VID = -1V 17 100 mV

Slew Rate VCC = 18V, RL = 2kΩ, AV = 1, 0.2 0.5 V/µ s


VIN = 0.5 to 2V, CL = 100pF

Unity Gain Bandwidth VCC = 30V, RL = 2kΩ, CL = 100pF 0.7 1.0 MHz

Apr. 2005 Rev. 1. 2 BCD Semiconductor Manufacturing Limited

5
Preliminary Datasheet

DUAL OP AMP AND VOLTAGE REFERENCE AP4310


Electrical Characteristics (Continued)
Operating Conditions: VCC = +5V, TA= 25oC unless otherwise specified.

Parameter Conditions Min Typ Max Unit


Op Amp 2 Section (VCC = 5V, VO = 1.4V, TA = 25oC, unless otherwise noted)
Input Offset Voltage TA = 25oC 0.5 3 mV

TA = -40 to 105oC 5

Input Offset Voltage Temperature T = -40 to 105oC


A
7 µV/oC
Drift
Input Offset Current TA = 25oC 2 30 nA

Input Bias Current TA = 25oC 20 150 nA

Input Voltage Range VCC = 0 to 36V 0 VCC - 1.5 V

Common Mode Rejection Ratio TA = 25oC, VCM = 0 to 3.5V 70 85 dB

Large Signal Voltage Gain VCC = 15V, RL = 2kΩ, VO = 1.4 to 11.4V 85 100 dB

Power Supply Rejection Ratio VCC = 5 to 30V 70 90 dΒ

Output Current Source VCC = 15V, VID = 1V, VO = 2V 20 40 mA

Sink VCC = 15V, VID = -1V, VO = 2V 7 20 mA

Output Voltage Swing (High) VCC = 30V, RL = 10kΩ, VID = 1V 27 28 V

Output Voltage Swing (Low) VCC = 30V, RL = 10kΩ, VID = -1V 17 100 mV
Slew Rate VCC = 18V, RL = 2kΩ, AV = 1, 0.2 0.5 V/µ s
VIN = 0.5 to 2V, CL = 100pF

Unity Gain Bandwidth VCC = 30V, RL = 2kΩ, CL = 100pF 0.7 1.0 MHz

Apr. 2005 Rev. 1. 2 BCD Semiconductor Manufacturing Limited

6
Preliminary Datasheet

DUAL OP AMP AND VOLTAGE REFERENCE AP4310


Typical Performance Characteristics

2.510

150
2.505
VKA=VREF
Reference Voltage (V)

100

Cathode Current (mA)


0
2.500 TA=25 C

50
2.495

0
2.490

2.485 -50

2.480 -100
-40 -20 0 20 40 60 80 100 120 -2 -1 0 1 2 3
o
Ambient Temperature ( C) Cathode Voltage (V)

Figure 4. Reference Voltage vs. Ambient Temperature Figure 5. Cathode Current vs. Cathode Voltage

30 110

25
100
Input Bias Current (nA)

20
Voltage Gain(dB)

90

15

80
10 RL=2KΩ
RL=20KΩ
70
5

0 60
-40 -20 0 20 40 60 80 100 120 0 2 4 6 8 10 12 14 16 18 20
o
Ambient Temperature ( C) Supply Voltage (V)

Figure 6. Input Bias Current vs. Ambient Temperature Figure 7. Op Amp Voltage Gain

Apr. 2005 Rev. 1. 2 BCD Semiconductor Manufacturing Limited

7
Preliminary Datasheet

DUAL OP AMP AND VOLTAGE REFERENCE AP4310


Typical Application

R1

Opto R6
Isolator

Op Amp 2 Battery
AC SMPS Pack
Line
+
R7

R3 R4 R5

Current -
R2
Sense
Op Amp 1

R8

AP4310

Figure 8. Application of AP4310 in a Constant Current and Constant Voltage Charger

Apr. 2005 Rev. 1. 2 BCD Semiconductor Manufacturing Limited

8
Preliminary Datasheet

DUAL OP AMP AND VOLTAGE REFERENCE AP4310


Mechanical Dimensions:

DIP-8 Unit: mm(inch)

0.700(0.028)
7.620(0.300)TYP
1.524(0.060) TYP

6° 6°

3.200(0.126)
3.710(0.146) 3.600(0.142)
4.310(0.170) 4°

0.510(0.020)MIN
3.000(0.118)
3.600(0.142)

0.204(0.008)
0.254(0.010)TYP 0.360(0.014)
0.360(0.014) 2.540(0.100) TYP 8.200(0.323)
0.560(0.022) 9.400(0.370)
0.130(0.005)MIN

6.200(0.244)
R0.750(0.030) 6.600(0.260)

Φ3.000(0.118)
Depth
0.100(0.004)
0.200(0.008)
9.000(0.354)
9.400(0.370)

Apr. 2005 Rev. 1. 2 BCD Semiconductor Manufacturing Limited

9
Preliminary Datasheet

DUAL OP AMP AND VOLTAGE REFERENCE AP4310


Mechanical Dimensions (Continued):

SOIC-8 Unit: mm(inch)

4.800(0.189)
0.320(0.013)
5.000(0.197) 1.350(0.053)

1.750(0.069)

7° 8°
0.675(0.027)
D
0.725(0.029) 5.800(0.228)
1.270(0.050) 6.200(0.244)
TYP
D
20:1
0.100(0.004) φ 0.800(0.031)
R0.150(0.006)

0.300(0.012)
0.200(0.008)



1.000(0.039)
3.800(0.150)
4.000(0.157)


0.330(0.013) 5°
0.510(0.020)
0.900(0.035) R0.150(0.006)

0.190(0.007)
0.250(0.010)

Apr. 2005 Rev. 1. 2 BCD Semiconductor Manufacturing Limited

10
http://www.bcdsemi.com

BCD Semiconductor Corporation


3170 De La Cruz Blvd, Suite # 105 Santa Clara, CA 95054-2411, U.S.A Tel: +1-408-988 6388, Fax: +1-408-988 6386
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.
800 Yi Shan Road, Shanghai 200233, PRC Tel: +86-21-6485-1491, Fax: +86-21-5450-0008
Advanced Analog Circuits (Shanghai) Corporation
8F, B Zone, 900 Yi Shan Road, Shanghai 200233, PRC Tel: +86-21-6495 9539, Fax: +86-21-6485 9673

BCD Semiconductor (Taiwan) Company Limited


Room 2210, 22nd Fl, 333, Keelung Road, Sec. 1, TaiPei (110), Taiwan Tel: +886-2-2758 6828, Fax: +886-2-2758 6892

IMPORTANT NOTICE

BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any pro-
ducts or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for
use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any
liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limi-
ted does not convey any license under its patent rights or other rights nor the rights of others.

You might also like