Lab 4
Lab 4
Lab 4
EXPERIMENT NO.
OBJECTIVE
Concept
Bipolar junction transistor (BJT) is a three terminal device with the terminals named as emitter (E), base
(B) and collector(C). In a npn-BJT, the emitter and the collector regions are of n-type while the central
base region is of p-type. In this device, the terminal currents are mainly dependent on the base-emitter
voltage, Vbe, and to a lesser extent on the base-collector voltage,Vcb. The structure of the device and
BJT consists of two pn junctions, the emitter-base junction and collector-base junction. Depending on
the bias condition of each of these junctions, current flows across the junctions accordingly. Current-
1. DC Characteristics
1.2. Here, for determining the output characteristics a nested DC Sweep of VCE and IB is required. For
achieving this, Select Setup Analysis and then DC Sweep from the pop-up window. Sweep first VCE
from 0 to 10V in 0.1V increments. Then click on the Nested Sweep button for sweeping IB from 0A to 1
mA in 0.2mA increments. Mark the Enable Nested Sweep box.
1.3. After placing a current marker in the collector of the BJT (as shown in Fig. 1), run the simulation.
1.7 In the PSpice Model Editor check the forward Beta parameters to as your calculated one.
1.8. [Home work] Draw a circuit for obtaining output characteristics of Q2N2222 in CB configuration and
simulate it using appropriate sources and nested sweeps.
2. Biasing of BJT
Fig-2
2.1. Draw the circuit of Fig. 2 (Fixed Bias Circuit). By choosing Setup analysis, mark Bias Point Detail
and Temperature. Set Temperature to 27 C.
2.2. Run the simulation and click on the Enable Bias Voltage Display and Enable Bias Current Display
icons.
2.4 Change the temperature 50 C and beta= 100 and fill up the table
Temp= 27
Temp= 50
50
100
2.4 Comment on the stability of the biasing circuits with change in temperature and device model .
Fig-3: Emitter Stabilized
3.1. Draw the circuit of Fig. 2 (Fixed Bias Circuit). By choosing Setup analysis, mark Bias Point Detail
and Temperature. Set Temperature to 27 C.
3.2. Run the simulation and click on the Enable Bias Voltage Display and Enable Bias Current Display
icons.
3.4 Change the temperature 50 C and beta= 100 and fill up the table
Temp= 27
50
100
Temp= 50
50
100
3.4 Comment on the stability of the biasing circuits with change in temperature and device model .
Fig-4: Voltage Divider
4.1. Draw the circuit of Fig. 2 (Fixed Bias Circuit). By choosing Setup analysis, mark Bias Point Detail
and Temperature. Set Temperature to 27 C.
4.2. Run the simulation and click on the Enable Bias Voltage Display and Enable Bias Current Display
icons.
4.4 Change the temperature 50 C and beta= 100 and fill up the table
Temp= 27
50
100
Temp= 50
50
100
4.4 Comment on the stability of the biasing circuits with change in temperature and device model .