Vishay General Semiconductor: Features
Vishay General Semiconductor: Features
Vishay General Semiconductor: Features
www.vishay.com
Vishay General Semiconductor
Schottky Barrier Plastic Rectifier
FEATURES
• Guardring for overvoltage protection
• Very small conduction losses
• Extremely fast switching
• Low forward voltage drop
• High forward surge capability
• High frequency operation
DO-201AD • Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS For use in low voltage high frequency inverters,
IF(AV) 3.0 A freewheeling, DC/DC converters, and polarity protection
VRRM 20 V, 30 V, 40 V applications.
IFSM 80 A
MECHANICAL DATA
VF 0.475 V, 0.500 V, 0.525 V
TJ max. 125 °C Case: DO-201AD
Molding compound meets UL 94 V-0 flammability rating
Package DO-201AD
Base P/N-E3 - RoHS-compliant, commercial grade
Diode variations Single
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes the cathode end
4.0 100
TJ = 125 °C
Resistive or Inductive Load
3.0 10
Pulse Width = 300 μs
1 % Duty Cycle
2.0 1
TJ = 25 °C
1.0 0.1
0 0.01
0 20 40 60 80 100 120 140 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Lead Temperature (°C) Instantaneous Forward Voltage (V)
Fig. 1 - Forward Current Derating Curve Fig. 3 - Typical Instantaneous Forward Characteristics
80 10
Instantaneous Reverse Current (mA)
TJ = TJ Max. TJ = 125 °C
Peak Forward Surge Current (A)
70
8.3 ms Single Half Sine-Wave
1
60
50 TJ = 75 °C
0.1
40
30
0.01 TJ = 25 °C
20
10 0.001
1 10 100 0 20 40 60 80 100
Number of Cycles at 60 Hz Percent of Rated Peak Reverse Voltage (%)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Fig. 4 - Typical Reverse Characteristics
1000 100
TJ = 25 °C
10
100
10 0.1
0.1 1 10 100 0 0.1 1 10 100
Reverse Voltage (V) t - Pulse Duration (s)
1.0 (25.4)
MIN.
0.210 (5.3)
0.190 (4.8)
DIA.
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
MIN.
0.052 (1.32)
0.048 (1.22)
DIA.
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