Forward & Reverse Biased Characteristics of Diode: Objectives

DHA SUFFA UNIVERSITY Dept.
of Mechanical Engineering
Electronics Engineering EE-2006| LAB
LAB # 1
Forward & Reverse Biased Characteristics of Diode
Objectives:
 To study the characteristics of silicon diode when forward biased
 To study the characteristics of silicon diode when reverse biased
System Modules (Hardware/ Software)

 DC Power Supply
 Digital Multi-Meter (DMM)
 Silicon Diode IN4007
 Resistors 1 KΩ
 Connecting wires
 Bread board
Theoretical Background:
In electronics, a diode is a two-terminal electronic component with an asymmetric transfer
characteristic, with low (ideally zero) resistance to current flow in one direction, and high
(ideally infinite) resistance in the other. A semiconductor diode, the most common type
today, is a crystalline piece of semiconductor material with a p-n junction connected to two
electrical terminals
The most common function of a diode is to allow an electric current to pass in one direction
(called the diode's forward direction), while blocking current in the opposite direction (the
reverse direction).
Fig. 1.1: Conventional diode symbol
The most common type of diode is a ‘silicon diode.’ It is enclosed in a glass cylinder with
the dark band marking the cathode terminal. This line points towards the positive of a
circuit. The opposite terminal is called the anode. Generally, diodes do not conduct until the
voltage reaches approximately 0.7 volts; this is called the ‘threshold point’. If the current
becomes too high the diode may crack or melt.
Lab 01 | Forward & Reverse Biased Characteristics of Diode Page 1 of 7

Forward Biasing:
A diode is forward biased by placing a potential difference across its terminals. Figure 1.2
illustrates a forward biased diode. Because of the positive potential applied to the anode and
the negative potential applied to the cathode, the depletion zone disappears. Current flows
from the negative terminal of the battery through the N region, across the non-existence
depletion region, and through the P region to the positive terminal of the battery. It takes the
specific value of the voltage for a diode to begin conduction, approximately 0.3V for
germanium and 0.7V for silicon. This voltage drop is normally referred to as biasing
voltage. Germanium requires lower biasing voltage because it has higher atomic number and
thus is more unstable.
Fig. 1.2: Forward biasing
V-I Curve During Forward Biasing:
Fig. 1.3: V-I curve of diode (forward biased)
The V-I curve of diode itself has two distinctly separate parts. One part lies in the first
quadrant and it stands for the forward-biased situation. It reflects the barrier voltage
(meaning the smallest amount of voltage that can turn on the diode). For Germanium diode,
the barrier voltage is 0.3V while silicon diode is 0.7V, but the real value differs according to
the temperature and current flows through the diode.
Reverse Biasing:
Reverse biasing is accomplished by applying a positive potential to the cathode and a
negative voltage to the anode as shown in Fig. 1.4. The positive potential on the cathode
attracts the electrons from the depletion region. At the same time, the negative potential on
the anode will attract the holes. The net result is that the depletion zone will increase in size.
Fig. 1.4: Reverse biasing
V-I Curve during Reverse Biasing:

Reverse bias will effect diodes in a different manner. As the revere bias or voltage is
increased, there will be a very small reverse current usually in milliamps for germanium
and nano/micro-amps for silicon diode. As the reverse voltage is gradually increased, the
current will stay at a constant low level until the junction breakdown voltage is achieved.
At that point the junction will cease to exist and the diode will conduct. As you can see in
the Fig. 1.5, the current flow will be massive. Reverse current flow is so heavy that it is
called avalanche conduction. When diode current flows in avalanche region, the current
flow becomes independent of voltage, and that point is called avalanche breakdown. Due
to the massive electron flow, normal PN junction diodes are destroyed when operated in
this manner unless there is any limiting resistor.
Fig. 1.5: V-I curve of diode (reverse biased)

Procedure:
Fig. 1.6: Diode forward biased circuit Fig. 1.7: Diode reverse biased circuit
1. Develop the circuit shown in Fig.1.6 and 1.7 on breadboard.
2. Increase the voltage of the voltage source (V1) from 0V to 3V in steps of 0.1V.
For each Observation, record the current (I) flowing through the circuit and the
voltage drop(V) across the diode in Table 1.1.
3. Plot the voltage across diode versus the current flowing through it on the graph
paper. Plot the voltage on the X-axis and the current on the Y-axis.
(Forward biased and Reverse biased)
Observations:
Table 1.1: Lab task
Voltage Drop Voltage Drop

Source Observed Source Observed
(𝑉𝐹)Across (𝑉𝑅)Across
Voltage Current (𝐼𝐹) Voltage Current (𝐼𝑅)
Diode During Diode During
(𝑉1) During F.B (𝑉1) During R.B
F.B R.B
0.1 0.1
0.2 0.2
0.3 0.3
0.4 0.4
0.5 0.5
0.6 0.6
0.7 0.7
0.8 0.8
0.9 0.9
1.0 1.0
1.1 1.1
1.2 1.2
1.3 1.3
1.5 1.5
1.7 1.7
1.9 1.9
2.1 2.1
2.3 2.3
2.5 2.5
2.7 2.7
3.0 3.0
DHA SUFFA UNIVERSITY Dept. of Electrical Engineering
Post-Lab Tasks:
Task 1: Is the characteristic curve of diode linear?
Task 2: How depletion region is affected forward biasing the diode?
Task 3: What are the applications of diodes?
Task 4: How depletion region is affected by reverse biasing the diode?
Task 5: What is Reverse Breakdown Voltage?
Learning Outcomes:
Upon successful completion of the lab, students will be able to:
LO1: Understand the forward & reverse biased mode of operation of a diode
Lab 01 | Forward & Reverse Biased Characteristics of Diode Page 6 of 7

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DHA SUFFA UNIVERSITY Dept.

System Modules (Hardware/ Software)

Fig. 1.1: Conventional diode symbol

Lab 01 | Forward & Reverse Biased Characteristics of Diode Page 1 of 7

Fig. 1.2: Forward biasing

V-I Curve During Forward Biasing:

Fig. 1.3: V-I curve of diode (forward biased)

Fig. 1.4: Reverse biasing

V-I Curve during Reverse Biasing:

Fig. 1.5: V-I curve of diode (reverse biased)

1. Develop the circuit shown in Fig.1.6 and 1.7 on breadboard.

Table 1.1: Lab task

Voltage Drop Voltage Drop

Task 1: Is the characteristic curve of diode linear?

Task 2: How depletion region is affected forward biasing the diode?

Task 3: What are the applications of diodes?

Task 4: How depletion region is affected by reverse biasing the diode?

Task 5: What is Reverse Breakdown Voltage?

Lab 01 | Forward & Reverse Biased Characteristics of Diode Page 6 of 7

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