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KA5x03xx-SERIES
KA5H0365R, KA5M0365R, KA5L0365R, KA5M0365RN,
KA5L0365RN, KA5H0380R, KA5M0380R, KA5L0380R
Fairchild Power Switch(FPS)

Features Description
• Precision Fixed Operating Frequency (100/67/50kHz) The Fairchild Power Switch(FPS) product family is specially
• Low Start-up Current(Typ. 100uA) designed for an off-line SMPS with minimal external
• Pulse by Pulse Current Limiting components. The Fairchild Power Switch(FPS) consists of a
• Over Current Protection high voltage power SenseFET and a current mode PWM IC.
• Over Voltage Protection (Min. 25V) Included PWM controller integrates the fixed frequency
• Internal Thermal Shutdown Function oscillator, the under voltage lock-out, the leading edge
• Under Voltage Lockout blanking, the optimized gate turn-on/turn-off driver, the
• Internal High Voltage Sense FET thermal shutdown protection, the over voltage protection,
• Auto-Restart Mode and the temperature compensated precision current sources
for the loop compensation and the fault protection circuitry.
Applications Compared to a discrete MOSFET and a PWM controller or
an RCCsolution, a Fairchild Power Switch(FPS) can reduce
• SMPS for VCR, SVR, STB, DVD & DVCD the total component count, design size and weight and at the
• SMPS for Printer, Facsimile & Scanner same time increase efficiency, productivity, and system
• Adaptor for Camcorder reliability. It has a basic platform well suited for the cost
effective design in either a flyback converter or a forward
converter
TO-220F-4L 8-DIP

1.6.7.8 Drain
1 2. GND
1. GND 2. Drain 3. VCC 4. FB 3. VCC
4. FB 5. NC

Internal Block Diagram

#3 VCC
32V 5V Internal #2 DRAIN
Vref bias SFET
(*#3 VCC) Good
logic (*#1.6.7.8 DRAIN)

OSC
9V S
5µA Q
1mA R
#4 FB −
2.5R L.E.B
1R +
0.1V
(*#4 FB) +
7.5V − S #1 GND
Q
R
+ Thermal S/D
Power on reset (*#2 GND)
27V −
OVER VOLTAGE S/D

*Asterisk - KA5M0365RN, KA5L0365RN

Rev.1.0.5
©2002 Fairchild Semiconductor Corporation
KA5X03XX-SERIES

Absolute Maximum Ratings

(Ta=25°C, unless otherwise specified)

Characteristic Symbol Value Unit

KA5H0365R, KA5M0365R, KA5L0365R
Maximum Drain Voltage VD,MAX 650 V
Drain-Gate Voltage (RGS=1MΩ) VDGR 650 V
Gate-Source (GND) Voltage VGS ±30 V
(1)
Drain Current Pulsed IDM 12.0 ADC
Continuous Drain Current (TC=25°C) ID 3.0 ADC
Continuous Drain Current (TC=100°C) ID 2.4 ADC
Single Pulsed Avalanche Energy (2) EAS 358 mJ
Maximum Supply Voltage VCC,MAX 30 V
Analog Input Voltage Range VFB -0.3 to VSD V
PD 75 W
Total Power Dissipation
Derating 0.6 W/°C
Operating Junction Temperature. TJ +160 °C
Operating Ambient Temperature. TA -25 to +85 °C
Storage Temperature Range. TSTG -55 to +150 °C
KA5H0380R, KA5M0380R, KA5L0380R
Maximum Drain Voltage VD,MAX 800 V
Drain-Gate Voltage (RGS=1MΩ) VDGR 800 V
Gate-Source (GND) Voltage VGS ±30 V
(1)
Drain Current Pulsed IDM 12.0 ADC
Continuous Drain Current (TC=25°C) ID 3.0 ADC
Continuous Drain Current (TC=100°C) ID 2.1 ADC
(2)
Single Pulsed Avalanche Energy EAS 95 mJ
Maximum Supply Voltage VCC,MAX 30 V
Analog Input Voltage Range VFB -0.3 to VSD V
PD 75 W
Total Power Dissipation
Derating 0.6 W/°C
Operating Junction Temperature. TJ +160 °C
Operating Ambient Temperature. TA -25 to +85 °C
Storage Temperature Range. TSTG -55 to +150 °C

Note:
1. Repetitive rating: Pulse width limited by maximum junction temperature
2. L = 51mH, starting Tj = 25°C
3. L = 13µH, starting Tj = 25°C

2
 KA5X03XX-SERIES

Absolute Maximum Ratings

(Ta=25°C, unless otherwise specified)

Characteristic Symbol Value Unit

KA5M0365RN, KA5L0365RN
Maximum Drain Voltage VD,MAX 650 V
Drain-Gate Voltage (RGS=1MΩ) VDGR 650 V
Gate-Source (GND) Voltage VGS ±30 V
(1)
Drain Current Pulsed IDM 12.0 ADC
Continuous Drain Current (Ta=25°C) ID 0.42 ADC
Continuous Drain Current (Ta=100°C) ID 0.28 ADC
Single Pulsed Avalanche Energy (2) EAS 127 mJ
Maximum Supply Voltage VCC,MAX 30 V
Analog Input Voltage Range VFB -0.3 to VSD V
PD 1.56 W
Total Power Dissipation
Derating 0.0125 W/°C
Operating Junction Temperature. TJ +160 °C
Operating Ambient Temperature. TA -25 to +85 °C
Storage Temperature Range. TSTG -55 to +150 °C

Note:
1. Repetitive rating: Pulse width limited by maximum junction temperature
2. L = 51mH, starting Tj = 25°C
3. L = 13µH, starting Tj = 25°C

3
KA5X03XX-SERIES

Electrical Characteristics (SenseFET Part)

(Ta = 25°C unless otherwise specified)

Parameter Symbol Condition Min. Typ. Max. Unit

KA5H0365R, KA5M0365R, KA5L0365R
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=50µA 650 - - V
VDS=Max. Rating, VGS=0V - - 50 µA
Zero Gate Voltage Drain Current IDSS VDS=0.8Max. Rating,
- - 200 µA
VGS=0V, TC=125°C
Static Drain-Source on Resistance (Note) RDS(ON) VGS=10V, ID=0.5A - 3.6 4.5 Ω
(Note)
Forward Transconductance gfs VDS=50V, ID=0.5A 2.0 - - S
Input Capacitance Ciss - 720 -
VGS=0V, VDS=25V,
Output Capacitance Coss - 40 - pF
f=1MHz
Reverse Transfer Capacitance Crss - 40 -
Turn On Delay Time td(on) VDD=0.5BVDSS, ID=1.0A - 150 -
Rise Time tr (MOSFET switching - 100 -
time is essentially nS
Turn Off Delay Time td(off) independent of - 150 -
Fall Time tf operating temperature) - 42 -
Total Gate Charge VGS=10V, ID=1.0A,
Qg - - 34
(Gate-Source+Gate-Drain) VDS=0.5BVDSS (MOSFET
Gate-Source Charge Qgs switching time is essentially - 7.3 - nC
independent of
Gate-Drain (Miller) Charge Qgd operating temperature) - 13.3 -
KA5H0380R, KA5M0380R, KA5L0380R
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=50µA 800 - - V
VDS=Max. Rating, VGS=0V - - 250 µA
Zero Gate Voltage Drain Current IDSS VDS=0.8Max. Rating,
- - 1000 µA
VGS=0V, TC=125°C
Static Drain-Source on Resistance (Note) RDS(ON) VGS=10V, ID=0.5A - 4.0 5.0 Ω
(Note)
Forward Transconductance gfs VDS=50V, ID=0.5A 1.5 2.5 - S
Input Capacitance Ciss - 779 -
VGS=0V, VDS=25V,
Output Capacitance Coss - 75.6 - pF
f=1MHz
Reverse Transfer Capacitance Crss - 24.9 -
Turn On Delay Time td(on) VDD=0.5BVDSS, ID=1.0A - 40 -
Rise Time tr (MOSFET switching - 95 -
time is essentially nS
Turn Off Delay Time td(off) independent of - 150 -
Fall Time tf operating temperature) - 60 -
Total Gate Charge VGS=10V, ID=1.0A,
Qg - - 34
(Gate-Source+Gate-Drain) VDS=0.5BVDSS (MOSFET
Gate-Source Charge Qgs switching time is - 7.2 - nC
essentially independent of
Gate-Drain (Miller) Charge Qgd operating temperature) - 12.1 -

Note:
1. Pulse test: Pulse width ≤ 300µS, duty ≤ 2%
2. 1-
S = ---
R

4
 KA5X03XX-SERIES

Electrical Characteristics (SenseFET Part)

(Ta = 25°C unless otherwise specified)

Parameter Symbol Condition Min. Typ. Max. Unit

KA5M0365RN, KA5L0365RN
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=50µA 650 - - V
VDS=Max. Rating, VGS=0V - - 50 µA
Zero Gate Voltage Drain Current IDSS VDS=0.8Max. Rating,
- - 200 µA
VGS=0V, TC=125°C
Static Drain-Source on Resistance (Note) RDS(ON) VGS=10V, ID=0.5A - 3.6 4.5 Ω
(Note)
Forward Transconductance gfs VDS=50V, ID=0.5A 2.0 - - S
Input Capacitance Ciss - 314.9 -
VGS=0V, VDS=25V,
Output Capacitance Coss - 47 - pF
f=1MHz
Reverse Transfer Capacitance Crss - 9 -
Turn On Delay Time td(on) VDD=0.5BVDSS, ID=1.0A - 11.2 -
Rise Time tr (MOSFET switching - 34 -
time is essentially nS
Turn Off Delay Time td(off) independent of - 28.2 -
Fall Time tf operating temperature) - 32 -
Total Gate Charge VGS=10V, ID=1.0A,
Qg 11.93
(Gate-Source+Gate-Drain) VDS=0.5BVDSS (MOSFET
Gate-Source Charge Qgs switching time is - 1.95 - nC
essentially independent of
Gate-Drain (Miller) Charge Qgd operating temperature) 6.85

Note:
1. Pulse test: Pulse width ≤ 300µS, duty ≤ 2%
2. 1
S = ----
R

5
KA5X03XX-SERIES

Electrical Characteristics (Control Part) (Continued)

(Ta = 25°C unless otherwise specified)

Characteristic Symbol Test condition Min. Typ. Max. Unit

UVLO SECTION
Start Threshold Voltage VSTART VFB=GND 14 15 16 V
Stop Threshold Voltage VSTOP VFB=GND 8.4 9 9.6 V
OSCILLATOR SECTION
KA5H0365R
Initial Accuracy FOSC 90 100 110 kHz
KA5H0380R
KA5M0365R
Initial Accuracy FOSC KA5M0365RN 61 67 73 kHz
KA5M0380R
KA5L0365R
Initial Accuracy FOSC KA5L0365RN 45 50 55 kHz
KA5L0380R
Frequency Change With Temperature (2) - -25°C≤Ta≤+85°C - ±5 ±10 %
KA5H0365R
Maximum Duty Cycle Dmax 62 67 72 %
KA5H0380R
KA5M0365R
KA5M0365RN
KA5M0380R
Maximum Duty Cycle Dmax 72 77 82 %
KA5L0365R
KA5L0365RN
KA5L0380R
FEEDBACK SECTION
Feedback Source Current IFB Ta=25°C, 0V<Vfb<3V 0.7 0.9 1.1 mA
Shutdown Feedback Voltage VSD Vfb>6.5V 6.9 7.5 8.1 V
Shutdown Delay Current Idelay Ta=25°C, 5V≤Vfb≤VSD 4 5 6 µA
REFERENCE SECTION
Output Voltage (1) Vref Ta=25°C 4.80 5.00 5.20 V
(1)(2)
Temperature Stability Vref/∆T -25°C≤Ta≤+85°C - 0.3 0.6 mV/°C
CURRENT LIMIT(SELF-PROTECTION)SECTION
Peak Current Limit IOVER Max. inductor current 1.89 2.15 2.41 A
PROTECTION SECTION
Over Voltage Protection VOVP VCC>24V 25 27 29 V
Thermal Shutdown Temperature (Tj) (1) TSD - 140 160 - °C
TOTAL STANDBY CURRENT SECTION
Start-up Current ISTART VCC=14V - 100 170 µA
Operating Supply Current
IOP VCC<28 - 7 12 mA
(Control Part Only)

Note:
1. These parameters, although guaranteed, are not 100% tested in production
2. These parameters, although guaranteed, are tested in EDS(water test) process

6
 KA5X03XX-SERIES

Typical Performance Characteristics(SenseFET part)

(KA5H0365R, KA5M0365R, KA5L0365R)

10
10
VGS
Top : 15V
10V
8.0V
7.0V
6.0V
ID, Drain Current [A]

ID, Drain Current [A]

5.5V
5.0V
Bottom:4.5V
1 150 oC
1

@Notes: 25 oC -25oC
@Notes:
1. 300µ s Pulse Test 1. VDS = 30V
2. TC = 25 oC 2. 300 µ s Pulse Test

0.1 0.1
1 10 2 4 6 8 10
VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V]

Figure 1. Output Characteristics Figure 2. Transfer Characteristics

Vgs=10V
IDR, Reverse Drain Current [A]
Drain-Source On-Resistance

5
1
RDS(on) , [Ω ]

Vgs=20V
3
150oC 25oC
0.1
2 @Notes :
1. VGS= 0V
@ Note : Tj=25℃ 2. 300µ s PulseTest
1

0 0.01
0 1 2 3 4 5 0.4 0.6 0.8 1.0 1.2
ID,Drain Current [A] VSD, Source-Drain Voltage [V]

Figure 3. On-Resistance vs. Drain Current Figure 4. Source-Drain Diode Forward Voltage

700

Ciss = Cgs + Cgd (Cds = shorted) 10

600 VDS =130V
Coss = Cds + Cgd
Crss = Cgd
VGS,Gate-Source Voltage[V]

8 VDS=320V
500 Ciss
VDS=520V
Capacitance [pF]

400 6

300
4

200
Coss
2
100
@Note : ID=3.0A
Crss
0 0
100 101 0 5 10 15 20 25

VDS, Drain-Source Voltage [V] QG,Total Gate Charge [nC]

Figure 5. Capacitance vs. Drain-Source Voltage Figure 6. Gate Charge vs. Gate-Source Voltage

7
KA5X03XX-SERIES

Typical Performance Characteristics (Continued)

1.2 2.5

2.0

Drain-Source On-Resistance
1.1
Drain-Source Breakdown Voltage

RDS(on), (Normalized)
BVDSS, (Normalized)

1.5

1.0

1.0

@ Notes : @Notes:
0.9 1. VGS = 10V
1. VGS = 0V 0.5
2. ID = 1.5 A
2. ID = 250µ A

0.8 0.0
-50 0 50 100 150 -50 0 50 100 150
o TJ, Junction Temperature [oC]
TJ, Junction Temperature [ C]

Figure 7. Breakdown Voltage vs. Temperature Figure 8. On-Resistance vs. Temperature

102
Operation in This Area
3.0
is Limited by R DS(on)
ID , Drain Current [A]

10 µs
101 100 µs
2.5

1 ms
ID, Drain Current [A]

10 ms 2.0
DC
100
1.5

1.0
10-1 @ Notes :
1. TC = 25 oC
2. TJ = 150 oC 0.5

3. Single Pulse
10-2 0 0.0
10 101 102 103 25 50 75 100 125 150
VDS , Drain-Source Voltage [V] TC, Case Temperature [oC]

Figure 9. Max. Safe Operating Area Figure 10. Max. Drain Current vs. Case Temperature

100
Thermal Response

D=0.5

0.2 @ Notes :
1. Zθ JC (t)=1.25 o C/W Max.
0.1
2. Duty Factor, D=t1 /t2
10-1
0.05 3. TJM -TC =PDM *Zθ JC (t)
ZθJ C(t) ,

0.02
0.01
single pulse

10-2 -5
10 10-4 10-3 10-2 10-1 100 101
t1 , Square Wave Pulse Duration [sec]

Figure 11. Thermal Response

8
 KA5X03XX-SERIES

Typical Performance Characteristics (Continued)

(KA5H0380R, KA5M0380R, KA5L0380R)

101 101
VGS
Top: 15V
10V
8.0V
7.0V
6.0V
ID, Drain Current [A]

ID, Drain Current [A]

5.5V
5.0V
Bottom:4.5V
100 100
150oC

@Notes: @Notes:
1. 300µ s Pulse Test 25oC -25oC 1. VDS = 30 V
2. TC = 25oC 2. 300µ s PulseTest

10-1 10-1
100 101 2 4 6 8 10
VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V]

Figure 1. Output Characteristics Figure 2. Thansfer Characteristics

Fig3. On-Resistance vs. Drain Current

8

7 10
Vgs=10V
IDR, Reverse Drain Current [A]
Drain-Source On-Resistance

5
RDS(on) , [Ω ]

Vgs=20V
4
1
3

2 25oC
150oC @Notes:
1. VGS = 0V
1 2. 300µ s Pulse Test
@Note : Tj=25℃

0 0.1
0 1 2 3 4 0.4 0.6 0.8 1.0
ID,Drain Current VSD, Source-Drain Voltage [V]

Figure 3. On-Resistance vs. Drain Current Figure 4. Source-Drain Diode Forward Voltage

1000

900 Ciss = Cgs + Cgd (Cds = shorted) 10

VDS=160V
Coss = Cds + Cgd
800
Crss = Cgd VDS=400V
VGS,Gate-Source Voltage[V]

8
700
VDS =640V
Capacitance [pF]

600 Ciss
6
500

400
4
300

200 Coss 2
@Note : ID=3.0A
100 Crss
0 0
100 101 0 5 10 15 20 25 30
VDS, Drain-Source Voltage [V] QG,Total Gate Charge [nC]

Figure 5. Capacitance vs. Drain-Source Voltage Figure 6. Gate Charge vs. Gate-Source Voltage

9
KA5X03XX-SERIES

Typical Performance Characteristics (Continued)

(KA5H0380R, KA5M0380R, KA5L0380R)

1.2 2.5

2.0
Drain-Source Breakdown Voltage

1.1

Drain-Source On-Resistance
BVDSS, (Normalized)

RDS(on), (Normalized)
1.5

1.0

1.0

@ Notes : @ Notes:
0.9 1. VGS = 0V
0.5
1. VGS = 10V
2. ID = 250µA 2. ID = 1.5 A

0.8 0.0
-50 0 50 100 150 -50 0 50 100 150
T J, Junction Temperature [oC] TJ, Junction Temperature [oC]

Figure 7. Breakdown Voltage vs. Temperature Figure 8. On-Resistance vs. Temperature

102 3.5
Operation in This Area
ID , Drain Current [A]

is Limited by R DS(on) 3.0

101 10 µ s 2.5
100 µ s
ID, Drain Current [A]

1 ms
2.0
10 ms
100 DC
1.5

@ Notes : 1.0
10-1
1. TC = 25 oC
o
2. TJ = 150 C 0.5
3. Single Pulse
-2
10 0.0
101 102 103 40 60 80 100 120 140
VDS , Drain-Source Voltage [V] TC, Case Temperature [oC]

Figure 9. Max. Safe Operating Area Figure 10. Max. Drain Current vs. Case Temperature

100
Thermal Response

D=0.5
@ Notes :
0.2 1. Zθ J C (t)=1.25 o C/W Max.
2. Duty Factor, D=t1 /t2
0.1 3. TJ M -TC =PD M *Zθ J C (t)
10- 1 0.05
Z J C(t) ,

0.02
0.01 single pulse
θ

10- 2 - 5
10 10- 4 10- 3 10- 2 10- 1 100 101
t 1 , Square Wave Pulse Duration [sec]

Figure 11. Thermal Response

10
 KA5X03XX-SERIES

Typical Performance Characteristics(SenseFET part) (Continued)

(KA5M0365RN, KA5L0365RN)

1
10
VGS
Top : 15.0 V
10.0 V 1
10
8.0 V
7.0 V
6.5 V
6.0 V

ID , Drain Current [A]

Bottom : 5.5 V
0
ID, Drain Current [A]

10
150℃
-55℃

0
10
25℃

-1
10 ※ Note : ※ Note
1. 250μ s Pulse Test 1. VDS = 50V
2. TC = 25℃ 2. 250μ s Pulse Test

-1
0 1 10
10 10 2 4 6 8 10
VDS, Drain-Source Voltage [V] VGS , Gate-Source Voltage [V]

Figure 1. Output Characteristics Figure 2. Transfer Characteristics

8.0

7.5
1
10
IDR , Reverse Drain Current [A]

7.0

6.5
Drain-Source On-Resistance

VGS = 10V
6.0
RDS(ON) [Ω ],

5.5
VGS = 20V
5.0 0
10
150℃
4.5
25℃
4.0 ※ Note :
1. VGS = 0V
3.5 2. 250μ s Pulse Test

3.0 ※ Note : TJ = 25℃

-1
2.5 10
0 1 2 3 4 5 6 7 0.2 0.4 0.6 0.8 1.0 1.2 1.4
ID, Drain Current [A] VSD , Source-Drain Voltage [V]

Figure 3. On-Resistance vs. Drain Current Figure 4. Source-Drain Diode Forward Voltage

700 12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
600 Crss = Cgd
VGS, Gate-Source Voltage [V]

10 VDS = 130V
Ciss VDS = 325V
500
8
Capacitances [pF]

VDS = 520V
400 Coss

6
300

Crss ※ Note ; 4
200 1. VGS = 0 V
2. f = 1 MHz

100 2 ※ Note : ID = 3.0 A

-1 0 1
0
10 10 10 0 2 4 6 8 10 12

VDS, Drain-Source Voltage [V] Q G, Total Gate Charge [nC]

Figure 5. Capacitance vs. Drain-Source Voltage Figure 6. Gate Charge vs. Gate-Source Voltage

11
KA5X03XX-SERIES

Typical Performance Characteristics (Continued)

( KA5M0365RN, KA5L0365RN)

1.15

2.5
Drain-Source Breakdown Voltage

Drain-Source On-Resistance
1.10
BVDSS, (Normalized)

RDS(ON), (Normalized)
2.0
1.05

1.5
1.00

1.0
0.95
※ Note :
1. VGS = 0 V ※ Note :
1. V GS = 10 V
2. ID = 250 μ A
0.90 0.5 2. ID = 1.5 A

-50 0 50 100 150 -50 0 50 100 150

o o
TJ, Junction Temperature [ C] T J, Junction Temperature [ C]

Figure 7. Breakdown Voltage vs. Temperature Figure 8. On-Resistance vs. Temperature

0.5
1
10 Operation in This Area
is Limited by R DS(on)

10 µs 0.4

10
0 100 µs
1 ms
ID, Drain Current [A]

ID, Drain Current [A]

10 ms 0.3
100 ms
10
-1 1s
10 s
0.2
DC

-2
10
0.1

-3
10 0.0
0 1 2
10 10 10 25 50 75 100 125 150

VDS, Drain-Source Voltage [V] TC, Case Temperature [? ]

Figure 9. Max. Safe Operating Area Figure 10. Max. Drain Current vs. Case Temperature

D=0.5
Z? JC(t), Thermal Response

0.2
10
0.1
0.05

0.02
1 0.01
? Notes :
1. Z? JC(t) = 80 ? /W Max.
2. Duty Factor, D=t1/t2
single pulse 3. TJM - T C = P DM * Z? JC(t)
0.1

1E-5 1E-4 1E-3 0.01 0.1 1 10 100 1000

t1, Square Wave Pulse Duration [sec]

Figure 11. Thermal Response

12
 KA5X03XX-SERIES

Typical Performance Characteristics (Control Part) (Continued)

(These characteristic graphs are normalized at Ta = 25°C)

Fig.1 Operating Frequency Fig.2 Feedback Source Current

1.2 1.2
1.15 1.15
1.1 1.1
1.05 1.05
Fosc 1 Ifb 1
0.95 0.95
0.9 0.9
0.85 0.85
0.8 0.8
-25 0 25 50 75 100 125 150 -25 0 25 50 75 100 125 150

Figure 1. Operating Frequency Figure 2. Feedback Source Current

Fig.3 Operating Current Fig.4 Max Inductor Current

1.2 1.1
1.15 1.05
1.1
1.05 IIpeak
over 1
Iop 1 0.95
0.95 0.9
0.9
0.85 0.85
0.8 0.8
-25 0 25 50 75 100 125 150 -25 0 25 50 75 100 125 150

Figure 3. Operating Supply Current Figure 4. Peak Current Limit

Fig.5 Start up Current Fig.6 Start Threshold Voltage

1.5 1.15
1.3 1.1
1.05
1.1
Istart Vstart 1
0.9
0.95
0.7 0.9
0.5 0.85
-25 0 25 50 75 100 125 150 -25 0 25 50 75 100 125 150

Figure 5. Start up Current Figure 6. Start Threshold Voltage

13
KA5X03XX-SERIES

Typical Performance Characteristics (Continued)

(These characteristic graphs are normalized at Ta = 25°C)

Fig.7 Stop Threshold Voltage Fig.8 Maximum Duty Cycle

1.15 1.15
1.1 1.1
1.05 1.05
Vstop 1 Dmax 1
0.95 0.95
0.9 0.9
0.85 0.85
-25 0 25 50 75 100 125 150 -25 0 25 50 75 100 125 150

Figure 7. Stop Threshold Voltage Figure 8. Maximum Duty Cycle

Fig.9 Vcc Zener Voltage Fig.10 Shutdown Feedback Voltage

1.2 1.15
1.15 1.1
1.1
1.05 1.05
Vz 1 Vsd 1
0.95 0.95
0.9
0.85 0.9
0.8 0.85
-25 0 25 50 75 100 125 150 -25 0 25 50 75 100 125 150

Figure 9. VCC Zener Voltage Figure 10. Shutdown Feedback Voltage

Fig.11 Shutdown Delay Current Fig.12 Over Voltage Protection

1.2 1.15
1.15
1.1
1.1
1.05 1.05
Idelay 1 Vovp 1
0.95 0.95
0.9
0.85 0.9
0.8 0.85
-25 0 25 50 75 100 125 150 -25 0 25 50 75 100 125 150

Figure 11. Shutdown Delay Current Figure 12. Over Voltage Protection

14
 KA5X03XX-SERIES

Typical Performance Characteristics (Continued)

(These characteristic graphs are normalized at Ta = 25°C)

Fig.13 Soft Start Voltage Fig.14 Drain Source Turn-on

1.15 Resistance
1.1 2.5
1.05 2
Vss 1 1.5
0.95 Rdson
( )1
0.9 0.5
0.85 0
-25 0 25 50 75 100 125 150 -25 0 25 50 75 100 125 150

Figure13. Soft Start Voltage Figure 14. Static Drain-Source on Resistance

15
KA5X03XX-SERIES

Package Dimensions

TO-220F-4L

16
 KA5X03XX-SERIES

Package Dimensions (Continued)

TO-220F-4L(Forming)

17
KA5X03XX-SERIES

Package Dimensions (Continued)

8-DIP

18
 KA5X03XX-SERIES

Ordering Information
Product Number Package Marking Code BVDSS FOSC RDS(on)
KA5H0365RTU TO-220F-4L
5H0365R 650V 100kHz 3.6Ω
KA5H0365RYDTU TO-220F-4L(Forming)
KA5M0365RTU TO-220F-4L
5M0365R 650V 67kHz 3.6Ω
KA5M0365RYDTU TO-220F-4L(Forming)
KA5L0365RTU TO-220F-4L
5L0365R 650V 50kHz 3.6Ω
KA5L0365RYDTU TO-220F-4L(Forming)
KA5M0365RN 8-DIP 5M0365R 650V 67kHz 3.6Ω
KA5L0365RN 8-DIP 5L0365R 650V 50kHz 3.6Ω
Product Number Package Marking Code BVDSS FOSC RDS(on)
KA5H0380RTU TO-220F-4L
5H0380R 800V 100kHz 4.6Ω
KA5H0380RYDTU TO-220F-4L(Forming)
KA5M0380RTU TO-220F-4L
5M0380R 800V 67kHz 4.6Ω
KA5M0380RYDTU TO-220F-4L(Forming)
KA5L0380RTU TO-220F-4L
5L0380R 800V 50kHz 4.6Ω
KA5L0380RYDTU TO-220F-4L(Forming)
TU :Non Forming Type
YDTU : Forming type

19
KA5X03XX-SERIES

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER
DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems 2. A critical component in any component of a life support
which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be
or (b) support or sustain life, and (c) whose failure to reasonably expected to cause the failure of the life support
perform when properly used in accordance with device or system, or to affect its safety or effectiveness.
instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the
user.

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