STM32F411xC STM32F411xE

ARM® Cortex®-M4 32b MCU+FPU, 125 DMIPS, 512KB Flash,

128KB RAM, USB OTG FS, 11 TIMs, 1 ADC, 13 comm. interfaces
Datasheet - production data

Features
)%*$

• Dynamic Efficiency Line with BAM (Batch

Acquisition Mode) WLCSP49
® ®
• Core: ARM 32-bit Cortex -M4 CPU with WLCSP49 UFQFPN48
(3.034 x 3.220 mm) (7 × 7 mm) UFBGA100
FPU, Adaptive real-time accelerator (ART LQFP100 (14 × 14 mm) (7 × 7 mm)
Accelerator™) allowing 0-wait state execution LQFP64 (10 × 10 mm)

from Flash memory, frequency up to 100 MHz, timers (independent and window) and a
memory protection unit, SysTick timer
125 DMIPS/1.25 DMIPS/MHz (Dhrystone 2.1), • Debug mode
and DSP instructions
– Serial wire debug (SWD) & JTAG
• Memories interfaces
– up to 512 Kbytes of Flash memory – Cortex®-M4 Embedded Trace Macrocell™
– 128 Kbytes of SRAM • Up to 81 I/O ports with interrupt capability
• Clock, reset and supply management – Up to 78 fast I/Os up to 100 MHz
– 1.7 V to 3.6 V application supply and I/Os – Up to 77 5 V-tolerant I/Os
– POR, PDR, PVD and BOR • Up to 13 communication interfaces
– 4-to-26 MHz crystal oscillator – Up to 3 x I2C interfaces (SMBus/PMBus)
– Internal 16 MHz factory-trimmed RC – Up to 3 USARTs (2 x 12.5 Mbit/s,
– 32 kHz oscillator for RTC with calibration 1 x 6.25 Mbit/s), ISO 7816 interface, LIN,
– Internal 32 kHz RC with calibration IrDA, modem control)
• Power consumption – Up to 5 SPI/I2Ss (up to 50 Mbit/s, SPI or
I2S audio protocol), SPI2 and SPI3 with
– Run: 100 µA/MHz (peripheral off) muxed full-duplex I2S to achieve audio
– Stop (Flash in Stop mode, fast wakeup class accuracy via internal audio PLL or
time): 42 µA Typ @ 25C; 65 µA max external clock
@25 °C – SDIO interface (SD/MMC/eMMC)
– Advanced connectivity: USB 2.0 full-speed
– Stop (Flash in Deep power down mode, device/host/OTG controller with on-chip
fast wakeup time): down to 10 µA @ 25 °C; PHY
30 µA max @25 °C • CRC calculation unit
– Standby: 2.4 µA @25 °C / 1.7 V without
• 96-bit unique ID
RTC; 12 µA @85 °C @1.7 V
– VBAT supply for RTC: 1 µA @25 °C • RTC: subsecond accuracy, hardware calendar

• 1×12-bit, 2.4 MSPS A/D converter: up to 16 • All packages (WLCSP49, LQFP64/100,

UFQFPN48, UFBGA100) are ECOPACK 2
®
channels
• General-purpose DMA: 16-stream DMA Table 1. Device summary
controllers with FIFOs and burst support
Reference Part number
• Up to 11 timers: up to six 16-bit, two 32-bit
timers up to 100 MHz, each with up to four STM32F411xC
STM32F411CC, STM32F411RC,
IC/OC/PWM or pulse counter and quadrature STM32F411VC
(incremental) encoder input, two watchdog STM32F411CE, STM32F411RE,
STM32F411xE
STM32F411VE

February 2015 DocID026289 Rev 4 1/146

This is information on a product in full production. www.st.com
Contents STM32F411xC STM32F411xE

Contents

1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

2 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2.1 Compatibility with STM32F4 series . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

3 Functional overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3.1 ARM® Cortex®-M4 with FPU core with embedded Flash and SRAM . . . 16
3.2 Adaptive real-time memory accelerator (ART Accelerator™) . . . . . . . . . 16
3.3 Batch Acquisition mode (BAM) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3.4 Memory protection unit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.5 Embedded Flash memory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.6 CRC (cyclic redundancy check) calculation unit . . . . . . . . . . . . . . . . . . . 17
3.7 Embedded SRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.8 Multi-AHB bus matrix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.9 DMA controller (DMA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
3.10 Nested vectored interrupt controller (NVIC) . . . . . . . . . . . . . . . . . . . . . . . 19
3.11 External interrupt/event controller (EXTI) . . . . . . . . . . . . . . . . . . . . . . . . . 19
3.12 Clocks and startup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
3.13 Boot modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
3.14 Power supply schemes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
3.15 Power supply supervisor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
3.15.1 Internal reset ON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
3.15.2 Internal reset OFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
3.16 Voltage regulator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
3.16.1 Regulator ON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
3.16.2 Regulator OFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
3.16.3 Regulator ON/OFF and internal power supply supervisor availability . . 25
3.17 Real-time clock (RTC) and backup registers . . . . . . . . . . . . . . . . . . . . . . 25
3.18 Low-power modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
3.19 VBAT operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
3.20 Timers and watchdogs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
3.20.1 Advanced-control timers (TIM1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27

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3.20.2 General-purpose timers (TIMx) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28

3.20.3 Independent watchdog . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
3.20.4 Window watchdog . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
3.20.5 SysTick timer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
3.21 Inter-integrated circuit interface (I2C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
3.22 Universal synchronous/asynchronous receiver transmitters (USART) . . 29
3.23 Serial peripheral interface (SPI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
3.24 Inter-integrated sound (I2S) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
3.25 Audio PLL (PLLI2S) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
3.26 Secure digital input/output interface (SDIO) . . . . . . . . . . . . . . . . . . . . . . . 31
3.27 Universal serial bus on-the-go full-speed (OTG_FS) . . . . . . . . . . . . . . . . 31
3.28 General-purpose input/outputs (GPIOs) . . . . . . . . . . . . . . . . . . . . . . . . . . 31
3.29 Analog-to-digital converter (ADC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
3.30 Temperature sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
3.31 Serial wire JTAG debug port (SWJ-DP) . . . . . . . . . . . . . . . . . . . . . . . . . . 32
3.32 Embedded Trace Macrocell™ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32

4 Pinouts and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33

5 Memory mapping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54

6 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
6.1 Parameter conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
6.1.1 Minimum and maximum values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
6.1.2 Typical values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
6.1.3 Typical curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
6.1.4 Loading capacitor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
6.1.5 Pin input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
6.1.6 Power supply scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59
6.1.7 Current consumption measurement . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
6.2 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
6.3 Operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62
6.3.1 General operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62
6.3.2 VCAP1/VCAP2 external capacitors . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64
6.3.3 Operating conditions at power-up/power-down (regulator ON) . . . . . . . 64
6.3.4 Operating conditions at power-up / power-down (regulator OFF) . . . . . 65

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6.3.5 Embedded reset and power control block characteristics . . . . . . . . . . . 65

6.3.6 Supply current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66
6.3.7 Wakeup time from low-power modes . . . . . . . . . . . . . . . . . . . . . . . . . . . 79
6.3.8 External clock source characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 81
6.3.9 Internal clock source characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 85
6.3.10 PLL characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 87
6.3.11 PLL spread spectrum clock generation (SSCG) characteristics . . . . . . 89
6.3.12 Memory characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90
6.3.13 EMC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92
6.3.14 Absolute maximum ratings (electrical sensitivity) . . . . . . . . . . . . . . . . . 94
6.3.15 I/O current injection characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95
6.3.16 I/O port characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96
6.3.17 NRST pin characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100
6.3.18 TIM timer characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101
6.3.19 Communications interfaces . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 102
6.3.20 12-bit ADC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110
6.3.21 Temperature sensor characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 116
6.3.22 VBAT monitoring characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116
6.3.23 Embedded reference voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116
6.3.24 SD/SDIO MMC/eMMC card host interface (SDIO) characteristics . . . 117
6.3.25 RTC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119

7 Package characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120

7.1 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120
7.1.1 WLCSP49, 3.034 x 3.22 mm, 0.4 mm pitch wafer level chip
scale package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121
7.1.2 UFQFPN48, 7 x 7 mm, 0.5 mm pitch package . . . . . . . . . . . . . . . . . . 124
7.1.3 LQFP64, 10 x 10 mm, 64-pin low-profile quad flat package . . . . . . . . 127
7.1.4 LQFP100, 14 x 14 mm, 100-pin low-profile quad flat package . . . . . . 130
7.1.5 UFBGA100, 7 x 7 mm, 0.5 mm pitch package . . . . . . . . . . . . . . . . . . 133
7.2 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 136
7.2.1 Reference document . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 136

8 Part numbering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 137

Appendix A Recommendations when using the internal reset OFF . . . . . . . . 139

A.1 Operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 139

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Appendix B Application block diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140

B.1 USB OTG Full Speed (FS) interface solutions . . . . . . . . . . . . . . . . . . . . 140
B.2 Sensor Hub application example. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 141
B.3 Batch Acquisition Mode (BAM) example . . . . . . . . . . . . . . . . . . . . . . . . . 143

9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 144

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5
List of tables STM32F411xC STM32F411xE

List of tables

Table 1. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Table 2. STM32F411xC/xE features and peripheral counts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Table 3. Regulator ON/OFF and internal power supply supervisor availability. . . . . . . . . . . . . . . . . 25
Table 4. Timer feature comparison . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Table 5. Comparison of I2C analog and digital filters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Table 6. USART feature comparison . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Table 7. Legend/abbreviations used in the pinout table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Table 8. STM32F411xC/xE pin definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Table 9. Alternate function mapping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Table 10. STM32F411xC/xE register boundary addresses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
Table 11. Voltage characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
Table 12. Current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
Table 13. Thermal characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
Table 14. General operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62
Table 15. Features depending on the operating power supply range . . . . . . . . . . . . . . . . . . . . . . . . 63
Table 16. VCAP1/VCAP2 operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64
Table 17. Operating conditions at power-up / power-down (regulator ON) . . . . . . . . . . . . . . . . . . . . 64
Table 18. Operating conditions at power-up / power-down (regulator OFF). . . . . . . . . . . . . . . . . . . . 65
Table 19. Embedded reset and power control block characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 65
Table 20. Typical and maximum current consumption, code with data processing (ART
accelerator disabled) running from SRAM - VDD = 1.7 V . . . . . . . . . . . . . . . . . . . . . . . . . . 67
Table 21. Typical and maximum current consumption, code with data processing (ART
accelerator disabled) running from SRAM - VDD = 3.6 V . . . . . . . . . . . . . . . . . . . . . . . . . . 68
Table 22. Typical and maximum current consumption in run mode, code with data processing
(ART accelerator enabled except prefetch) running from Flash memory- VDD = 1.7 V . . . 69
Table 23. Typical and maximum current consumption in run mode, code with data processing
(ART accelerator enabled except prefetch) running from Flash memory - VDD = 3.6 V . . 70
Table 24. Typical and maximum current consumption in run mode, code with data processing
(ART accelerator disabled) running from Flash memory - VDD = 3.6 V. . . . . . . . . . . . . . . 71
Table 25. Typical and maximum current consumption in run mode, code with data processing
(ART accelerator enabled with prefetch) running from Flash memory - VDD = 3.6 V . . . . . 72
Table 26. Typical and maximum current consumption in Sleep mode - VDD = 3.6 V . . . . . . . . . . . . . 73
Table 27. Typical and maximum current consumptions in Stop mode - VDD = 1.7 V . . . . . . . . . . . . . 73
Table 28. Typical and maximum current consumption in Stop mode - VDD=3.6 V. . . . . . . . . . . . . . . 74
Table 29. Typical and maximum current consumption in Standby mode - VDD= 1.7 V . . . . . . . . . . . 74
Table 30. Typical and maximum current consumption in Standby mode - VDD= 3.6 V . . . . . . . . . . . 74
Table 31. Typical and maximum current consumptions in VBAT mode. . . . . . . . . . . . . . . . . . . . . . . . 75
Table 32. Switching output I/O current consumption . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77
Table 33. Peripheral current consumption . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78
Table 34. Low-power mode wakeup timings(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80
Table 35. High-speed external user clock characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81
Table 36. Low-speed external user clock characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82
Table 37. HSE 4-26 MHz oscillator characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83
Table 38. LSE oscillator characteristics (fLSE = 32.768 kHz) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 84
Table 39. HSI oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85
Table 40. LSI oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86
Table 41. Main PLL characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 87
Table 42. PLLI2S (audio PLL) characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88

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Table 43. SSCG parameter constraints . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 89

Table 44. Flash memory characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90
Table 45. Flash memory programming . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91
Table 46. Flash memory programming with VPP voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91
Table 47. Flash memory endurance and data retention . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92
Table 48. EMS characteristics for LQFP100 package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93
Table 49. EMI characteristics for LQFP100 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94
Table 50. ESD absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94
Table 51. Electrical sensitivities . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95
Table 52. I/O current injection susceptibility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95
Table 53. I/O static characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96
Table 54. Output voltage characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98
Table 55. I/O AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99
Table 56. NRST pin characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100
Table 57. TIMx characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101
Table 58. I2C characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 102
Table 59. SCL frequency (fPCLK1= 50 MHz, VDD = VDD_I2C = 3.3 V) . . . . . . . . . . . . . . . . . . . . . . . . 103
Table 60. SPI dynamic characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104
Table 61. I2S dynamic characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 107
Table 62. USB OTG FS startup time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 109
Table 63. USB OTG FS DC electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 109
Table 64. USB OTG FS electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110
Table 65. ADC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110
Table 66. ADC accuracy at fADC = 18 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112
Table 67. ADC accuracy at fADC = 30 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112
Table 68. ADC accuracy at fADC = 36 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112
Table 69. ADC dynamic accuracy at fADC = 18 MHz - limited test conditions . . . . . . . . . . . . . . . . . 113
Table 70. ADC dynamic accuracy at fADC = 36 MHz - limited test conditions . . . . . . . . . . . . . . . . . 113
Table 71. Temperature sensor characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116
Table 72. Temperature sensor calibration values. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116
Table 73. VBAT monitoring characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116
Table 74. Embedded internal reference voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116
Table 75. Internal reference voltage calibration values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117
Table 76. Dynamic characteristics: SD / MMC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118
Table 77. Dynamic characteristics: eMMC characteristics VDD = 1.7 V to 1.9 V . . . . . . . . . . . . . . . 119
Table 78. RTC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119
Table 79. STM32F411xC/xE WLCSP49 wafer level chip scale
package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 122
Table 80. WLCSP49 recommended PCB design rules (0.4 mm pitch) . . . . . . . . . . . . . . . . . . . . . . 123
Table 81. UFQFPN48, 7 x 7 mm, 0.5 mm pitch, package mechanical data . . . . . . . . . . . . . . . . . . . 124
Table 82. LQFP64, 10 x 10 mm, 64-pin low-profile quad flat package mechanical data . . . . . . . . . 128
Table 83. LQPF100, 14 x 14 mm, 100-pin low-profile quad flat package mechanical data . . . . . . . 131
Table 84. UFBGA100, 7 x 7 mm, 0.50 mm pitch, ultra fine pitch ball grid array package
mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 133
Table 85. Ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 137
Table 86. Device order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 138
Table 87. Limitations depending on the operating power supply range . . . . . . . . . . . . . . . . . . . . . . 139
Table 88. Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 144

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7
List of figures STM32F411xC STM32F411xE

List of figures

Figure 1. Compatible board design for LQFP100 package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Figure 2. Compatible board design for LQFP64 package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 3. STM32F411xC/xE block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 4. Multi-AHB matrix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Figure 5. Power supply supervisor interconnection with internal reset OFF . . . . . . . . . . . . . . . . . . . 21
Figure 6. Regulator OFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Figure 7. Startup in regulator OFF: slow VDD slope -
power-down reset risen after VCAP_1/VCAP_2 stabilization. . . . . . . . . . . . . . . . . . . . . . . . . 24
Figure 8. Startup in regulator OFF mode: fast VDD slope -
power-down reset risen before VCAP_1/VCAP_2 stabilization . . . . . . . . . . . . . . . . . . . . . . . 24
Figure 9. STM32F411xC/xE WLCSP49 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Figure 10. STM32F411xC/xE UFQFPN48 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Figure 11. STM32F411xC/xE LQFP64 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Figure 12. STM32F411xC/xE LQFP100 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Figure 13. STM32F411xC/xE UFBGA100 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Figure 14. Memory map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
Figure 15. Pin loading conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
Figure 16. Input voltage measurement . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
Figure 17. Power supply scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59
Figure 18. Current consumption measurement scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
Figure 19. External capacitor CEXT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64
Figure 20. Typical VBAT current consumption (LSE in low-drive mode and RTC ON). . . . . . . . . . . . . 75
Figure 21. Low-power mode wakeup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80
Figure 22. High-speed external clock source AC timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82
Figure 23. Low-speed external clock source AC timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83
Figure 24. Typical application with an 8 MHz crystal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 84
Figure 25. Typical application with a 32.768 kHz crystal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85
Figure 26. ACCHSI versus temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86
Figure 27. ACCLSI versus temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 87
Figure 28. PLL output clock waveforms in center spread mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90
Figure 29. PLL output clock waveforms in down spread mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90
Figure 30. FT/TC I/O input characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97
Figure 31. I/O AC characteristics definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100
Figure 32. Recommended NRST pin protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101
Figure 33. I2C bus AC waveforms and measurement circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103
Figure 34. SPI timing diagram - slave mode and CPHA = 0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105
Figure 35. SPI timing diagram - slave mode and CPHA = 1(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 106
Figure 36. SPI timing diagram - master mode(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 106
Figure 37. I2S slave timing diagram (Philips protocol)(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 108
Figure 38. I2S master timing diagram (Philips protocol)(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 108
Figure 39. USB OTG FS timings: definition of data signal rise and fall time . . . . . . . . . . . . . . . . . . . 110
Figure 40. ADC accuracy characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114
Figure 41. Typical connection diagram using the ADC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114
Figure 42. Power supply and reference decoupling (VREF+ not connected to VDDA). . . . . . . . . . . . . 115
Figure 43. Power supply and reference decoupling (VREF+ connected to VDDA). . . . . . . . . . . . . . . . 115
Figure 44. SDIO high-speed mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117
Figure 45. SD default mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118
Figure 46. WLCSP49 wafer level chip scale package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121

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STM32F411xC STM32F411xE List of figures

Figure 47. WLCSP49 0.4 mm pitch wafer level chip scale recommended footprint . . . . . . . . . . . . . 122
Figure 48. Example of WLCSP49 marking (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 123
Figure 49. UFQFPN48, 7 x 7 mm, 0.5 mm pitch, package outline. . . . . . . . . . . . . . . . . . . . . . . . . . . 124
Figure 50. UFQFPN48 recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125
Figure 51. Example of UFQFPN48 marking (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126
Figure 52. LQFP64, 10 x 10 mm, 64-pin low-profile quad flat package outline . . . . . . . . . . . . . . . . . 127
Figure 53. LQFP64 recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128
Figure 54. Example of LQFP64 marking (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129
Figure 55. LQFP100, 14 x 14 mm, 100-pin low-profile quad flat package outline . . . . . . . . . . . . . . . 130
Figure 56. LQFP100 recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 132
Figure 57. Example of LQPF100 marking (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 132
Figure 58. UFBGA100, 7 x 7 mm, 0.50 mm pitch, ultra fine pitch ball grid array
package outline. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 133
Figure 59. Recommended PCB design rules for pads (0.5 mm-pitch BGA) . . . . . . . . . . . . . . . . . . . 134
Figure 60. Example of UFBGA100 marking (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 135
Figure 61. USB controller configured as peripheral-only and used in Full-Speed mode . . . . . . . . . . 140
Figure 62. USB controller configured as host-only and used in Full-Speed mode. . . . . . . . . . . . . . . 140
Figure 63. USB controller configured in dual mode and used in Full-Speed mode . . . . . . . . . . . . . . 141
Figure 64. Sensor Hub application example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 141
Figure 65. Batch Acquisition Mode (BAM) example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 143

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9
Introduction STM32F411xC STM32F411xE

1 Introduction

This datasheet provides the description of the STM32F411xC/xE line of microcontrollers.

The STM32F411xC/xE datasheet should be read in conjunction with RM0383 reference
manual which is available from the STMicroelectronics website www.st.com. It includes all
information concerning Flash memory programming.
For information on the Cortex-M4 core, please refer to the Cortex-M4 programming
manual (PM0214) available from www.st.com.

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STM32F411xC STM32F411xE Description

2 Description

The STM32F411XC/XE devices are based on the high-performance ARM® Cortex® -M4 32-
bit RISC core operating at a frequency of up to 100 MHz. Its Cortex®-M4 core features a
Floating point unit (FPU) single precision which supports all ARM single-precision data-
processing instructions and data types. It also implements a full set of DSP instructions and
a memory protection unit (MPU) which enhances application security.
The STM32F411xC/xE belongs to the STM32 Dynamic Efficiency™ product line (with
products combining power efficiency, performance and integration) while adding a new
innovative feature called Batch Acquisition Mode (BAM) allowing to save even more power
consumption during data batching.
The STM32F411xC/xE incorporate high-speed embedded memories (up to 512 Kbytes of
Flash memory, 128 Kbytes of SRAM), and an extensive range of enhanced I/Os and
peripherals connected to two APB buses, two AHB bus and a 32-bit multi-AHB bus matrix.
All devices offer one 12-bit ADC, a low-power RTC, six general-purpose 16-bit timers
including one PWM timer for motor control, two general-purpose 32-bit timers. They also
feature standard and advanced communication interfaces.
• Up to three I2Cs
• Five SPIs
• Five I2Ss out of which two are full duplex. To achieve audio class accuracy, the I2S
peripherals can be clocked via a dedicated internal audio PLL or via an external clock
to allow synchronization.
• Three USARTs
• SDIO interface
• USB 2.0 OTG full speed interface
Refer to Table 2: STM32F411xC/xE features and peripheral counts for the peripherals
available for each part number.
The STM32F411xC/xE operate in the –40 to +105 °C temperature range from a 1.7 (PDR
OFF) to 3.6 V power supply. A comprehensive set of power-saving mode allows the design
of low-power applications.
These features make the STM32F411xC/xE microcontrollers suitable for a wide range of
applications:
• Motor drive and application control
• Medical equipment
• Industrial applications: PLC, inverters, circuit breakers
• Printers, and scanners
• Alarm systems, video intercom, and HVAC
• Home audio appliances
• Mobile phone sensor hub
Figure 3 shows the general block diagram of the devices.

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56
Description STM32F411xC STM32F411xE

Table 2. STM32F411xC/xE features and peripheral counts

Peripherals STM32F411xC STM32F411xE

Flash memory in Kbytes 256 512

SRAM in Kbytes System 128
General-
7
purpose
Timers
Advanced-
1
control
SPI/ I2S 5/5 (2 full duplex)
I2C 3
Communication
USART 3
interfaces
SDIO 1
USB OTG FS 1
GPIOs 36 50 81 36 50 81

12-bit ADC 1
Number of channels 10 16 10 16
Maximum CPU frequency 100 MHz
Operating voltage 1.7 to 3.6 V
Ambient temperatures: –40 to +85 °C/–40 to +105 °C
Operating temperatures
Junction temperature: –40 to + 125 °C
WLCSP49 UFBGA100 WLCSP49 UFBGA100
Package LQFP64 LQFP64
UFQFPN48 LQFP100 UFQFPN48 LQFP100

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STM32F411xC STM32F411xE Description

2.1 Compatibility with STM32F4 series

The STM32F411xC/xE are fully software and feature compatible with the STM32F4 series
(STM32F42x, STM32F401, STM32F43x, STM32F41x, STM32F405 and STM32F407)
The STM32F411xC/xE can be used as drop-in replacement of the other STM32F4 products
but some slight changes have to be done on the PCB board.

Figure 1. Compatible board design for LQFP100 package

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DocID026289 Rev 4 13/146

56
Description STM32F411xC STM32F411xE

Figure 2. Compatible board design for LQFP64 package

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14/146 DocID026289 Rev 4

STM32F411xC STM32F411xE Description

Figure 3. STM32F411xC/xE block diagram


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1. The timers connected to APB2 are clocked from TIMxCLK up to 100 MHz, while the timers connected to APB1 are clocked
from TIMxCLK up to 100 MHz.

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56
Functional overview STM32F411xC STM32F411xE

3 Functional overview

3.1 ARM® Cortex®-M4 with FPU core with embedded Flash and
SRAM
The ARM® Cortex®-M4 with FPU processor is the latest generation of ARM processors for
embedded systems. It was developed to provide a low-cost platform that meets the needs of
MCU implementation, with a reduced pin count and low-power consumption, while
delivering outstanding computational performance and an advanced response to interrupts.
The ARM® Cortex®-M4 with FPU 32-bit RISC processor features exceptional code-
efficiency, delivering the high-performance expected from an ARM core in the memory size
usually associated with 8- and 16-bit devices. The processor supports a set of DSP
instructions which allow efficient signal processing and complex algorithm execution. Its
single precision FPU (floating point unit) speeds up software development by using
metalanguage development tools, while avoiding saturation.
The STM32F411xC/xE devices are compatible with all ARM tools and software.
Figure 3 shows the general block diagram of the STM32F411xC/xE.
Note: Cortex®-M4 with FPU is binary compatible with Cortex®-M3.

3.2 Adaptive real-time memory accelerator (ART Accelerator™)

The ART Accelerator™ is a memory accelerator which is optimized for STM32 industry-
standard ARM® Cortex®-M4 with FPU processors. It balances the inherent performance
advantage of the ARM® Cortex®-M4 with FPU over Flash memory technologies, which
normally requires the processor to wait for the Flash memory at higher frequencies.
To release the processor full 105 DMIPS performance at this frequency, the accelerator
implements an instruction prefetch queue and branch cache, which increases program
execution speed from the -bit Flash memory. Based on CoreMark benchmark, the
performance achieved thanks to the ART accelerator is equivalent to 0 wait state program
execution from Flash memory at a CPU frequency up to 100 MHz.

3.3 Batch Acquisition mode (BAM)

The Batch acquisition mode allows enhanced power efficiency during data batching. It
enables data acquisition through any communication peripherals directly to memory using
the DMA in reduced power consumption as well as data processing while the rest of the
system is in low-power mode (including the flash and ART). For example in an audio
system, a smart combination of PDM audio sample acquisition and processing from the I2S
directly to RAM (flash and ART™ stopped) with the DMA using BAM followed by some very
short processing from flash allows to drastically reduce the power consumption of the
application. A dedicated application note (AN4515) describes how to implement the
STM32F411xC/xE BAM to allow the best power efficiency.

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3.4 Memory protection unit

The memory protection unit (MPU) is used to manage the CPU accesses to memory to
prevent one task to accidentally corrupt the memory or resources used by any other active
task. This memory area is organized into up to 8 protected areas that can in turn be divided
up into 8 subareas. The protection area sizes are between 32 bytes and the whole 4
gigabytes of addressable memory.
The MPU is especially helpful for applications where some critical or certified code has to be
protected against the misbehavior of other tasks. It is usually managed by an RTOS (real-
time operating system). If a program accesses a memory location that is prohibited by the
MPU, the RTOS can detect it and take action. In an RTOS environment, the kernel can
dynamically update the MPU area setting, based on the process to be executed.
The MPU is optional and can be bypassed for applications that do not need it.

3.5 Embedded Flash memory

The devices embed up to 512 Kbytes of Flash memory available for storing programs and
data.
To optimize the power consumption the Flash memory can also be switched off in Run or in
Sleep mode (see Section 3.18: Low-power modes). Two modes are available: Flash in Stop
mode or in DeepSleep mode (trade off between power saving and startup time, see
Table 34: Low-power mode wakeup timings(1)). Before disabling the Flash, the code must
be executed from the internal RAM.

3.6 CRC (cyclic redundancy check) calculation unit

The CRC (cyclic redundancy check) calculation unit is used to get a CRC code from a 32-bit
data word and a fixed generator polynomial.
Among other applications, CRC-based techniques are used to verify data transmission or
storage integrity. In the scope of the EN/IEC 60335-1 standard, they offer a means of
verifying the Flash memory integrity. The CRC calculation unit helps compute a software
signature during runtime, to be compared with a reference signature generated at link-time
and stored at a given memory location.

3.7 Embedded SRAM

All devices embed:
• 128 Kbytes of system SRAM which can be accessed (read/write) at CPU clock speed
with 0 wait states

3.8 Multi-AHB bus matrix

The 32-bit multi-AHB bus matrix interconnects all the masters (CPU, DMAs) and the slaves
(Flash memory, RAM, AHB and APB peripherals) and ensures a seamless and efficient
operation even when several high-speed peripherals work simultaneously.

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Functional overview STM32F411xC STM32F411xE

Figure 4. Multi-AHB matrix

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3.9 DMA controller (DMA)

The devices feature two general-purpose dual-port DMAs (DMA1 and DMA2) with 8
streams each. They are able to manage memory-to-memory, peripheral-to-memory and
memory-to-peripheral transfers. They feature dedicated FIFOs for APB/AHB peripherals,
support burst transfer and are designed to provide the maximum peripheral bandwidth
(AHB/APB).
The two DMA controllers support circular buffer management, so that no specific code is
needed when the controller reaches the end of the buffer. The two DMA controllers also
have a double buffering feature, which automates the use and switching of two memory
buffers without requiring any special code.
Each stream is connected to dedicated hardware DMA requests, with support for software
trigger on each stream. Configuration is made by software and transfer sizes between
source and destination are independent.
The DMA can be used with the main peripherals:
• SPI and I2S
• I2C
• USART
• General-purpose, basic and advanced-control timers TIMx
• SD/SDIO/MMC/eMMC host interface
• ADC

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3.10 Nested vectored interrupt controller (NVIC)

The devices embed a nested vectored interrupt controller able to manage 16 priority levels,
and handle up to 62 maskable interrupt channels plus the 16 interrupt lines of the
Cortex®-M4 with FPU.
• Closely coupled NVIC gives low-latency interrupt processing
• Interrupt entry vector table address passed directly to the core
• Allows early processing of interrupts
• Processing of late arriving, higher-priority interrupts
• Support tail chaining
• Processor state automatically saved
• Interrupt entry restored on interrupt exit with no instruction overhead
This hardware block provides flexible interrupt management features with minimum interrupt
latency.

3.11 External interrupt/event controller (EXTI)

The external interrupt/event controller consists of 21 edge-detector lines used to generate
interrupt/event requests. Each line can be independently configured to select the trigger
event (rising edge, falling edge, both) and can be masked independently. A pending register
maintains the status of the interrupt requests. The EXTI can detect an external line with a
pulse width shorter than the Internal APB2 clock period. Up to 81 GPIOs can be connected
to the 16 external interrupt lines.

3.12 Clocks and startup

On reset the 16 MHz internal RC oscillator is selected as the default CPU clock. The
16 MHz internal RC oscillator is factory-trimmed to offer 1% accuracy at 25 °C. The
application can then select as system clock either the RC oscillator or an external 4-26 MHz
clock source. This clock can be monitored for failure. If a failure is detected, the system
automatically switches back to the internal RC oscillator and a software interrupt is
generated (if enabled). This clock source is input to a PLL thus allowing to increase the
frequency up to 100 MHz. Similarly, full interrupt management of the PLL clock entry is
available when necessary (for example if an indirectly used external oscillator fails).
Several prescalers allow the configuration of the two AHB buses, the high-speed APB
(APB2) and the low-speed APB (APB1) domains. The maximum frequency of the two AHB
buses is 100 MHz while the maximum frequency of the high-speed APB domains is
100 MHz. The maximum allowed frequency of the low-speed APB domain is 50 MHz.
The devices embed a dedicated PLL (PLLI2S) which allows to achieve audio class
performance. In this case, the I2S master clock can generate all standard sampling
frequencies from 8 kHz to 192 kHz.

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3.13 Boot modes

At startup, boot pins are used to select one out of three boot options:
• Boot from user Flash
• Boot from system memory
• Boot from embedded SRAM
The boot loader is located in system memory. It is used to reprogram the Flash memory by
using USART1(PA9/10), USART2(PD5/6), USB OTG FS in device mode (PA11/12) through
DFU (device firmware upgrade), I2C1(PB6/7), I2C2(PB10/3), I2C3(PA8/PB4),
SPI1(PA4/5/6/7), SPI2(PB12/13/14/15) or SPI3(PA15, PC10/11/12).
For more detailed information on the bootloader, refer to Application Note: AN2606,
STM32™ microcontroller system memory boot mode.

3.14 Power supply schemes

• VDD = 1.7 to 3.6 V: external power supply for I/Os with the internal supervisor
(POR/PDR) disabled, provided externally through VDD pins. Requires the use of an
external power supply supervisor connected to the VDD and NRST pins.
• VSSA, VDDA = 1.7 to 3.6 V: external analog power supplies for ADC, Reset blocks, RCs
and PLL. VDDA and VSSA must be connected to VDD and VSS, respectively, with
decoupling technique.
• VBAT = 1.65 to 3.6 V: power supply for RTC, external clock 32 kHz oscillator and
backup registers (through power switch) when VDD is not present.
Refer to Figure 17: Power supply scheme for more details.

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3.15 Power supply supervisor

3.15.1 Internal reset ON

This feature is available for VDD operating voltage range 1.8 V to 3.6 V.
The internal power supply supervisor is enabled by holding PDR_ON high.
The device has an integrated power-on reset (POR) / power-down reset (PDR) circuitry
coupled with a Brownout reset (BOR) circuitry. At power-on, POR is always active, and
ensures proper operation starting from 1.8 V. After the 1.8 V POR threshold level is
reached, the option byte loading process starts, either to confirm or modify default
thresholds, or to disable BOR permanently. Three BOR thresholds are available through
option bytes.
The device remains in reset mode when VDD is below a specified threshold, VPOR/PDR or
VBOR, without the need for an external reset circuit.
The device also features an embedded programmable voltage detector (PVD) that monitors
the VDD/VDDA power supply and compares it to the VPVD threshold. An interrupt can be
generated when VDD/VDDA drops below the VPVD threshold and/or when VDD/VDDA is
higher than the VPVD threshold. The interrupt service routine can then generate a warning
message and/or put the MCU into a safe state. The PVD is enabled by software.

3.15.2 Internal reset OFF

This feature is available only on packages featuring the PDR_ON pin. The internal power-on
reset (POR) / power-down reset (PDR) circuitry is disabled by setting the PDR_ON pin to
low.
An external power supply supervisor should monitor VDD and should set the device in reset
mode when VDD is below 1.7 V. NRST should be connected to this external power supply
supervisor. Refer to Figure 5: Power supply supervisor interconnection with internal reset
OFF.

Figure 5. Power supply supervisor interconnection with internal reset OFF(1)

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Functional overview STM32F411xC STM32F411xE

1. The PRD_ON pin is only available in the WLCSP49 and UFBGA100 packages.

A comprehensive set of power-saving mode allows to design low-power applications.

When the internal reset is OFF, the following integrated features are no longer supported:
• The integrated power-on reset (POR) / power-down reset (PDR) circuitry is disabled.
• The brownout reset (BOR) circuitry must be disabled.
• The embedded programmable voltage detector (PVD) is disabled.
• VBAT functionality is no more available and VBAT pin should be connected to VDD.

3.16 Voltage regulator

The regulator has four operating modes:
• Regulator ON
– Main regulator mode (MR)
– Low power regulator (LPR)
– Power-down
• Regulator OFF

3.16.1 Regulator ON
On packages embedding the BYPASS_REG pin, the regulator is enabled by holding
BYPASS_REG low. On all other packages, the regulator is always enabled.
There are three power modes configured by software when the regulator is ON:
• MR is used in the nominal regulation mode (With different voltage scaling in Run)
In Main regulator mode (MR mode), different voltage scaling are provided to reach the
best compromise between maximum frequency and dynamic power consumption.
• LPR is used in the Stop modes
The LP regulator mode is configured by software when entering Stop mode.
• Power-down is used in Standby mode.
The Power-down mode is activated only when entering in Standby mode. The regulator
output is in high impedance and the kernel circuitry is powered down, inducing zero
consumption. The contents of the registers and SRAM are lost.
Depending on the package, one or two external ceramic capacitors should be connected on
the VCAP_1 and VCAP_2 pins. The VCAP_2 pin is only available for the LQFP100 and
UFBGA100 packages.
All packages have the regulator ON feature.

3.16.2 Regulator OFF

The Regulator OFF is available only on the UFBGA100, which features the BYPASS_REG
pin. The regulator is disabled by holding BYPASS_REG high. The regulator OFF mode
allows to supply externally a V12 voltage source through VCAP_1 and VCAP_2 pins.

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Since the internal voltage scaling is not managed internally, the external voltage value must
be aligned with the targeted maximum frequency. Refer to Table 14: General operating
conditions.
The two 2.2 µF VCAP ceramic capacitors should be replaced by two 100 nF decoupling
capacitors. Refer to Figure 18: Power supply scheme.
When the regulator is OFF, there is no more internal monitoring on V12. An external power
supply supervisor should be used to monitor the V12 of the logic power domain. PA0 pin
should be used for this purpose, and act as power-on reset on V12 power domain.
In regulator OFF mode, the following features are no more supported:
• PA0 cannot be used as a GPIO pin since it allows to reset a part of the V12 logic power
domain which is not reset by the NRST pin.
• As long as PA0 is kept low, the debug mode cannot be used under power-on reset. As
a consequence, PA0 and NRST pins must be managed separately if the debug
connection under reset or pre-reset is required.

Figure 6. Regulator OFF

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The following conditions must be respected:

• VDD should always be higher than VCAP_1 and VCAP_2 to avoid current injection
between power domains.
• If the time for VCAP_1 and VCAP_2 to reach V12 minimum value is faster than the time for
VDD to reach 1.7 V, then PA0 should be kept low to cover both conditions: until VCAP_1
and VCAP_2 reach V12 minimum value and until VDD reaches 1.7 V (see Figure 7).
• Otherwise, if the time for VCAP_1 and VCAP_2 to reach V12 minimum value is slower
than the time for VDD to reach 1.7 V, then PA0 could be asserted low externally (see
Figure 8).
• If VCAP_1 and VCAP_2 go below V12 minimum value and VDD is higher than 1.7 V, then a
reset must be asserted on PA0 pin.
Note: The minimum value of V12 depends on the maximum frequency targeted in the application

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Functional overview STM32F411xC STM32F411xE

Figure 7. Startup in regulator OFF: slow VDD slope -

power-down reset risen after VCAP_1/VCAP_2 stabilization

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Figure 8. Startup in regulator OFF mode: fast VDD slope -

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3.16.3 Regulator ON/OFF and internal power supply supervisor availability

Table 3. Regulator ON/OFF and internal power supply supervisor availability

Power supply Power supply
Package Regulator ON Regulator OFF
supervisor ON supervisor OFF

UFQFPN48 Yes No Yes No

Yes
Yes
WLCSP49 Yes No PDR_ON external
PDR_ON set to VDD
control(1)
LQFP64 Yes No Yes No
LQFP100 Yes No Yes No
Yes Yes Yes
Yes
UFBGA100 BYPASS_REG set to BYPASS_REG set to PDR_ON external
PDR_ON set to VDD
VSS VDD control (1)
1. Refer to Section 3.15: Power supply supervisor

3.17 Real-time clock (RTC) and backup registers

The backup domain includes:
• The real-time clock (RTC)
• 20 backup registers
The real-time clock (RTC) is an independent BCD timer/counter. Dedicated registers contain
the second, minute, hour (in 12/24 hour), week day, date, month, year, in BCD (binary-
coded decimal) format. Correction for 28, 29 (leap year), 30, and 31 day of the month are
performed automatically. The RTC features a reference clock detection, a more precise
second source clock (50 or 60 Hz) can be used to enhance the calendar precision. The RTC
provides a programmable alarm and programmable periodic interrupts with wakeup from
Stop and Standby modes. The sub-seconds value is also available in binary format.
It is clocked by a 32.768 kHz external crystal, resonator or oscillator, the internal low-power
RC oscillator or the high-speed external clock divided by 128. The internal low-speed RC
has a typical frequency of 32 kHz. The RTC can be calibrated using an external 512 Hz
output to compensate for any natural quartz deviation.
Two alarm registers are used to generate an alarm at a specific time and calendar fields can
be independently masked for alarm comparison. To generate a periodic interrupt, a 16-bit
programmable binary auto-reload downcounter with programmable resolution is available
and allows automatic wakeup and periodic alarms from every 120 µs to every 36 hours.
A 20-bit prescaler is used for the time base clock. It is by default configured to generate a
time base of 1 second from a clock at 32.768 kHz.
The backup registers are 32-bit registers used to store 80 bytes of user application data
when VDD power is not present. Backup registers are not reset by a system, a power reset,
or when the device wakes up from the Standby mode (see Section 3.18: Low-power
modes).
Additional 32-bit registers contain the programmable alarm subseconds, seconds, minutes,
hours, day, and date.

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The RTC and backup registers are supplied through a switch that is powered either from the
VDD supply when present or from the VBAT pin.

3.18 Low-power modes

The devices support three low-power modes to achieve the best compromise between low
power consumption, short startup time and available wakeup sources:
• Sleep mode
In Sleep mode, only the CPU is stopped. All peripherals continue to operate and can
wake up the CPU when an interrupt/event occurs.
To further reduce the power consumption, the Flash memory can be switched off
before entering in Sleep mode. Note that this requires a code execution from the RAM.
• Stop mode
The Stop mode achieves the lowest power consumption while retaining the contents of
SRAM and registers. All clocks in the 1.2 V domain are stopped, the PLL, the HSI RC
and the HSE crystal oscillators are disabled. The voltage regulator can also be put
either in normal or in low-power mode.
The device can be woken up from the Stop mode by any of the EXTI line (the EXTI line
source can be one of the 16 external lines, the PVD output, the RTC alarm/ wakeup/
tamper/ time stamp events).
• Standby mode
The Standby mode is used to achieve the lowest power consumption. The internal
voltage regulator is switched off so that the entire 1.2 V domain is powered off. The
PLL, the HSI RC and the HSE crystal oscillators are also switched off. After entering
Standby mode, the SRAM and register contents are lost except for registers in the
backup domain when selected.
The device exits the Standby mode when an external reset (NRST pin), an IWDG reset,
a rising edge on the WKUP pin, or an RTC alarm/ wakeup/ tamper/time stamp event
occurs.
Standby mode is not supported when the embedded voltage regulator is bypassed and
the 1.2 V domain is controlled by an external power.

3.19 VBAT operation

The VBAT pin allows to power the device VBAT domain from an external battery, an external
super-capacitor, or from VDD when no external battery and an external super-capacitor are
present.
VBAT operation is activated when VDD is not present.
The VBAT pin supplies the RTC and the backup registers.
Note: When the microcontroller is supplied from VBAT, external interrupts and RTC alarm/events
do not exit it from VBAT operation. When PDR_ON pin is not connected to VDD (internal
Reset OFF), the VBAT functionality is no more available and VBAT pin should be connected
to VDD.

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3.20 Timers and watchdogs

The devices embed one advanced-control timer, seven general-purpose timers and two
watchdog timers.
All timer counters can be frozen in debug mode.
Table 4 compares the features of the advanced-control and general-purpose timers.

Table 4. Timer feature comparison

Max. Max.
DMA Capture/
Timer Counter Counter Prescaler Complementary interface timer
Timer request compare
type resolution type factor output clock clock
generation channels
(MHz) (MHz)

Any
Up, integer
Advanced-
TIM1 16-bit Down, between 1 Yes 4 Yes 100 100
control
Up/down and
65536
Any
Up, integer
TIM2,
32-bit Down, between 1 Yes 4 No 50 100
TIM5
Up/down and
65536
Any
Up, integer
TIM3,
16-bit Down, between 1 Yes 4 No 50 100
TIM4
Up/down and
General 65536
purpose Any
integer
TIM9 16-bit Up between 1 No 2 No 100 100
and
65536
Any
TIM1 integer
0, 16-bit Up between 1 No 1 No 100 100
TIM11 and
65536

3.20.1 Advanced-control timers (TIM1)

The advanced-control timer (TIM1) can be seen as three-phase PWM generators
multiplexed on 4 independent channels. It has complementary PWM outputs with
programmable inserted dead times. It can also be considered as a complete general-
purpose timer. Its 4 independent channels can be used for:
• Input capture
• Output compare
• PWM generation (edge- or center-aligned modes)
• One-pulse mode output

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If configured as standard 16-bit timers, it has the same features as the general-purpose
TIMx timers. If configured as a 16-bit PWM generator, it has full modulation capability (0-
100%).
The advanced-control timer can work together with the TIMx timers via the Timer Link
feature for synchronization or event chaining.
TIM1 supports independent DMA request generation.

3.20.2 General-purpose timers (TIMx)

There are seven synchronizable general-purpose timers embedded in the
STM32F411xC/xE (see Table 4 for differences).
• TIM2, TIM3, TIM4, TIM5
The STM32F411xC/xE devices are 4 full-featured general-purpose timers: TIM2, TIM5,
TIM3, and TIM4.The TIM2 and TIM5 timers are based on a 32-bit auto-reload
up/downcounter and a 16-bit prescaler. The TIM3 and TIM4 timers are based on a 16-
bit auto-reload up/downcounter and a 16-bit prescaler. They all feature four
independent channels for input capture/output compare, PWM or one-pulse mode
output. This gives up to 15 input capture/output compare/PWMs.
The TIM2, TIM3, TIM4, TIM5 general-purpose timers can work together, or with the
other general-purpose timers and the advanced-control timer TIM1 via the Timer Link
feature for synchronization or event chaining.
Any of these general-purpose timers can be used to generate PWM outputs.
TIM2, TIM3, TIM4, TIM5 all have independent DMA request generation. They are
capable of handling quadrature (incremental) encoder signals and the digital outputs
from 1 to 4 hall-effect sensors.
• TIM9, TIM10 and TIM11
These timers are based on a 16-bit auto-reload upcounter and a 16-bit prescaler.
TIM10 and TIM11 feature one independent channel, whereas TIM9 has two
independent channels for input capture/output compare, PWM or one-pulse mode
output. They can be synchronized with the TIM2, TIM3, TIM4, TIM5 full-featured
general-purpose timers. They can also be used as simple time bases.

3.20.3 Independent watchdog

The independent watchdog is based on a 12-bit downcounter and 8-bit prescaler. It is
clocked from an independent 32 kHz internal RC and as it operates independently from the
main clock, it can operate in Stop and Standby modes. It can be used either as a watchdog
to reset the device when a problem occurs, or as a free-running timer for application timeout
management. It is hardware- or software-configurable through the option bytes.

3.20.4 Window watchdog

The window watchdog is based on a 7-bit downcounter that can be set as free-running. It
can be used as a watchdog to reset the device when a problem occurs. It is clocked from
the main clock. It has an early warning interrupt capability and the counter can be frozen in
debug mode.

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3.20.5 SysTick timer

This timer is dedicated to real-time operating systems, but could also be used as a standard
downcounter. It features:
• A 24-bit downcounter
• Autoreload capability
• Maskable system interrupt generation when the counter reaches 0
• Programmable clock source.

3.21 Inter-integrated circuit interface (I2C)

Up to three I2C bus interfaces can operate in multimaster and slave modes. They can
support the standard (up to 100 kHz) and fast (up to 400 kHz) modes. The I2C bus
frequency can be increased up to 1 MHz. For more details about the complete solution,
please contact your local ST sales representative.They also support the 7/10-bit addressing
mode and the 7-bit dual addressing mode (as slave). A hardware CRC
generation/verification is embedded.
They can be served by DMA and they support SMBus 2.0/PMBus.
The devices also include programmable analog and digital noise filters (see Table 5).

Table 5. Comparison of I2C analog and digital filters

Analog filter Digital filter

Pulse width of
≥ 50 ns Programmable length from 1 to 15 I2C peripheral clocks
suppressed spikes

3.22 Universal synchronous/asynchronous receiver transmitters

(USART)
The devices embed three universal synchronous/asynchronous receiver transmitters
(USART1, USART2 and USART6).
These three interfaces provide asynchronous communication, IrDA SIR ENDEC support,
multiprocessor communication mode, single-wire half-duplex communication mode and
have LIN Master/Slave capability. The USART1 and USART6 interfaces are able to
communicate at speeds of up to 12.5 Mbit/s. The USART2 interface communicates at up to
6.25 bit/s.
USART1 and USART2 also provide hardware management of the CTS and RTS signals,
Smart Card mode (ISO 7816 compliant) and SPI-like communication capability. All
interfaces can be served by the DMA controller.

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56
Functional overview STM32F411xC STM32F411xE

Table 6. USART feature comparison

Max. baud Max. baud
USART Standard Modem SPI Smartcard rate in Mbit/s rate in Mbit/s APB
LIN irDA
name features (RTS/CTS) master (ISO 7816) (oversampling (oversampling mapping
by 16) by 8)

APB2
USART1 X X X X X X 6.25 12.5 (max.
100 MHz)
APB1
USART2 X X X X X X 3.12 6.25 (max.
50 MHz)
APB2
USART6 X N.A X X X X 6.25 12.5 (max.
100 MHz)

3.23 Serial peripheral interface (SPI)

The devices feature up to five SPIs in slave and master modes in full-duplex and simplex
communication modes. SPI1, SPI4 and SPI5 can communicate at up to 50 Mbit/s, SPI2 and
SPI3 can communicate at up to 25 Mbit/s. The 3-bit prescaler gives 8 master mode
frequencies and the frame is configurable to 8 bits or 16 bits. The hardware CRC
generation/verification supports basic SD Card/MMC modes. All SPIs can be served by the
DMA controller.
The SPI interface can be configured to operate in TI mode for communications in master
mode and slave mode.

3.24 Inter-integrated sound (I2S)

Five standard I2S interfaces (multiplexed with SPI1 to SPI5) are available.They can be
operated in master or slave mode, in simplex communication modes and full duplex for I2S2
and I2S3 and can be configured to operate with a 16-/32-bit resolution as an input or output
channel. All the I2Sx audio sampling frequencies from 8 kHz up to 192 kHz are supported.
When either or both of the I2S interfaces is/are configured in master mode, the master clock
can be output to the external DAC/CODEC at 256 times the sampling frequency.
All I2Sx can be served by the DMA controller.

3.25 Audio PLL (PLLI2S)

The devices feature an additional dedicated PLL for audio I2S application. It allows to
achieve error-free I2S sampling clock accuracy without compromising on the CPU
performance.
The PLLI2S configuration can be modified to manage an I2S sample rate change without
disabling the main PLL (PLL) used for the CPU.
The audio PLL can be programmed with very low error to obtain sampling rates ranging
from 8 kHz to 192 kHz.

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STM32F411xC STM32F411xE Functional overview

In addition to the audio PLL, a master clock input pin can be used to synchronize the I2S
flow with an external PLL (or Codec output).

3.26 Secure digital input/output interface (SDIO)

An SD/SDIO/MMC/eMMC host interface is available, that supports MultiMediaCard System
Specification Version 4.2 in three different databus modes: 1-bit (default), 4-bit and 8-bit.
The interface allows data transfer at up to 50 MHz, and is compliant with the SD Memory
Card Specification Version 2.0.
The SDIO Card Specification Version 2.0 is also supported with two different databus
modes: 1-bit (default) and 4-bit.
The current version supports only one SD/SDIO/MMC4.2 card at any one time and a stack
of MMC4.1 or previous.
In addition to SD/SDIO/MMC/eMMC, this interface is fully compliant with the CE-ATA digital
protocol Rev1.1.

3.27 Universal serial bus on-the-go full-speed (OTG_FS)

The devices embed an USB OTG full-speed device/host/OTG peripheral with integrated
transceivers. The USB OTG FS peripheral is compliant with the USB 2.0 specification and
with the OTG 1.0 specification. It has software-configurable endpoint setting and supports
suspend/resume. The USB OTG full-speed controller requires a dedicated 48 MHz clock
that is generated by a PLL connected to the HSE oscillator. The major features are:
• Combined Rx and Tx FIFO size of 320 × 35 bits with dynamic FIFO sizing
• Supports the session request protocol (SRP) and host negotiation protocol (HNP)
• 4 bidirectional endpoints
• 8 host channels with periodic OUT support
• HNP/SNP/IP inside (no need for any external resistor)
• For OTG/Host modes, a power switch is needed in case bus-powered devices are
connected

3.28 General-purpose input/outputs (GPIOs)

Each of the GPIO pins can be configured by software as output (push-pull or open-drain,
with or without pull-up or pull-down), as input (floating, with or without pull-up or pull-down)
or as peripheral alternate function. Most of the GPIO pins are shared with digital or analog
alternate functions. All GPIOs are high-current-capable and have speed selection to better
manage internal noise, power consumption and electromagnetic emission.
The I/O configuration can be locked if needed by following a specific sequence in order to
avoid spurious writing to the I/Os registers.
Fast I/O handling allowing maximum I/O toggling up to 100 MHz.

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Functional overview STM32F411xC STM32F411xE

3.29 Analog-to-digital converter (ADC)

One 12-bit analog-to-digital converter is embedded and shares up to 16 external channels,
performing conversions in the single-shot or scan mode. In scan mode, automatic
conversion is performed on a selected group of analog inputs.
The ADC can be served by the DMA controller. An analog watchdog feature allows very
precise monitoring of the converted voltage of one, some or all selected channels. An
interrupt is generated when the converted voltage is outside the programmed thresholds.
To synchronize A/D conversion and timers, the ADCs could be triggered by any of TIM1,
TIM2, TIM3, TIM4 or TIM5 timer.

3.30 Temperature sensor

The temperature sensor has to generate a voltage that varies linearly with temperature. The
conversion range is between 1.7 V and 3.6 V. The temperature sensor is internally
connected to the ADC_IN18 input channel which is used to convert the sensor output
voltage into a digital value. Refer to the reference manual for additional information.
As the offset of the temperature sensor varies from chip to chip due to process variation, the
internal temperature sensor is mainly suitable for applications that detect temperature
changes instead of absolute temperatures. If an accurate temperature reading is needed,
then an external temperature sensor part should be used.

3.31 Serial wire JTAG debug port (SWJ-DP)

The ARM SWJ-DP interface is embedded, and is a combined JTAG and serial wire debug
port that enables either a serial wire debug or a JTAG probe to be connected to the target.
Debug is performed using 2 pins only instead of 5 required by the JTAG (JTAG pins could
be re-use as GPIO with alternate function): the JTAG TMS and TCK pins are shared with
SWDIO and SWCLK, respectively, and a specific sequence on the TMS pin is used to
switch between JTAG-DP and SW-DP.

3.32 Embedded Trace Macrocell™

The ARM Embedded Trace Macrocell provides a greater visibility of the instruction and data
flow inside the CPU core by streaming compressed data at a very high rate from the
STM32F411xC/xE through a small number of ETM pins to an external hardware trace port
analyzer (TPA) device. The TPA is connected to a host computer using any high-speed
channel available. Real-time instruction and data flow activity can be recorded and then
formatted for display on the host computer that runs the debugger software. TPA hardware
is commercially available from common development tool vendors.
The Embedded Trace Macrocell operates with third party debugger software tools.

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STM32F411xC STM32F411xE Pinouts and pin description

4 Pinouts and pin description

Figure 9. STM32F411xC/xE WLCSP49 pinout

      

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1. The above figure shows the package bump side.

DocID026289 Rev 4 33/146

56
Pinouts and pin description STM32F411xC STM32F411xE

Figure 10. STM32F411xC/xE UFQFPN48 pinout

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1. The above figure shows the package top view.

34/146 DocID026289 Rev 4

STM32F411xC STM32F411xE Pinouts and pin description

Figure 11. STM32F411xC/xE LQFP64 pinout

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-36

1. The above figure shows the package top view.

DocID026289 Rev 4 35/146

56
Pinouts and pin description STM32F411xC STM32F411xE

Figure 12. STM32F411xC/xE LQFP100 pinout

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-36

1. The above figure shows the package top view.

36/146 DocID026289 Rev 4

STM32F411xC STM32F411xE Pinouts and pin description

Figure 13. STM32F411xC/xE UFBGA100 pinout

           

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0

069

1. This figure shows the package top view

DocID026289 Rev 4 37/146

56
Pinouts and pin description STM32F411xC STM32F411xE

Table 7. Legend/abbreviations used in the pinout table

Name Abbreviation Definition

Unless otherwise specified in brackets below the pin name, the pin function during and after
Pin name
reset is the same as the actual pin name
S Supply pin
Pin type I Input only pin
I/O Input/ output pin
FT 5 V tolerant I/O
TC Standard 3.3 V I/O
I/O structure
B Dedicated BOOT0 pin
NRST Bidirectional reset pin with embedded weak pull-up resistor

Notes Unless otherwise specified by a note, all I/Os are set as floating inputs during and after reset

Alternate
Functions selected through GPIOx_AFR registers
functions

Additional
Functions directly selected/enabled through peripheral registers
functions

Table 8. STM32F411xC/xE pin definitions

Pin number
I/O structure
Pin type

Pin name
UFBGA100L

Notes
WLCSP49

LQFP100
UQFN48

LQFP64

(function after Alternate functions Additional functions

reset)(1)

TRACECLK,
SPI4_SCK/I2S4_CK,
- - - 1 B2 PE2 I/O FT - -
SPI5_SCK/I2S5_CK,
EVENTOUT
TRACED0,
- - - 2 A1 PE3 I/O FT - -
EVENTOUT
TRACED1,
SPI4_NSS/I2S4_WS,
- - - 3 B1 PE4 I/O FT - -
SPI5_NSS/I2S5_WS,
EVENTOUT
TRACED2,
TIM9_CH1,
- - - 4 C2 PE5 I/O FT - SPI4_MISO, -
SPI5_MISO,
EVENTOUT

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STM32F411xC STM32F411xE Pinouts and pin description

Table 8. STM32F411xC/xE pin definitions (continued)

Pin number

I/O structure
Pin type
Pin name

UFBGA100L

Notes
WLCSP49

LQFP100
UQFN48

LQFP64

(function after Alternate functions Additional functions

reset)(1)

TRACED3,
TIM9_CH2,
- - - 5 D2 PE6 I/O FT - SPI4_MOSI/I2S4_SD, -
SPI5_MOSI/I2S5_SD,
EVENTOUT
- - - - D3 VSS S - - - -
- - - - C4 VDD S - - - -
1 1 B7 6 E2 VBAT S - - - -
PC13- RTC_AMP1,
2 2 D5 7 C1 I/O FT (2)(3) -
ANTI_TAMP RTC_OUT, RTC_TS
(2)(3)
PC14-
3 3 C7 8 D1 I/O FT (4) - OSC32_IN
OSC32_IN
PC15-
4 4 C6 9 E1 I/O FT - - OSC32_OUT
OSC32_OUT
- - - 10 F2 VSS S - - - -
- - - 11 G2 VDD S - - - -
5 5 D7 12 F1 PH0 - OSC_IN I/O FT - - OSC_IN
PH1 -
6 6 D6 13 G1 I/O FT - - OSC_OUT
OSC_OUT
7 7 E7 14 H2 NRST I/O FT - EVENTOUT -
- 8 - 15 H1 PC0 I/O FT - EVENTOUT ADC1_10
- 9 - 16 J2 PC1 I/O FT - EVENTOUT ADC1_11
SPI2_MISO,
- 10 - 17 J3 PC2 I/O FT - I2S2ext_SD, ADC1_12
EVENTOUT
SPI2_MOSI/I2S2_SD,
- 11 - 18 K2 PC3 I/O FT - ADC1_13
EVENTOUT
- - - 19 - VDD S - - - -
8 12 E6 20 J1 VSSA S - - - -
- - - - K1 VREF- S - - - -
9 13 F7 21 L1 VREF+ S - - - -
- - - 22 M1 VDDA S - - - -

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56
Pinouts and pin description STM32F411xC STM32F411xE

Table 8. STM32F411xC/xE pin definitions (continued)

Pin number

I/O structure
Pin type
Pin name

UFBGA100L

Notes
WLCSP49

LQFP100
UQFN48

LQFP64

(function after Alternate functions Additional functions

reset)(1)

TIM2_CH1/TIM2_ET,
(5) TIM5_CH1,
10 14 F6 23 L2 PA0-WKUP I/O TC ADC1_0, WKUP1
USART2_CTS,
EVENTOUT
TIM2_CH2,
TIM5_CH2,
11 15 G7 24 M2 PA1 I/O FT - SPI4_MOSI/I2S4_SD, ADC1_1
USART2_RTS,
EVENTOUT
TIM2_CH3,
TIM5_CH3,
TIM9_CH1,
12 16 E5 25 K3 PA2 I/O FT - ADC1_2
I2S2_CKIN,
USART2_TX,
EVENTOUT
TIM2_CH4,
TIM5_CH4,
TIM9_CH2,
13 17 E4 26 L3 PA3 I/O FT - ADC1_3
I2S2_MCK,
USART2_RX,
EVENTOUT
- 18 - 27 - VSS S - - - -
- - - - E3 BYPASS_REG S - - - -
- 19 - 28 - VDD I FT - EVENTOUT -
SPI1_NSS/I2S1_WS,
SPI3_NSS/I2S3_WS,
14 20 G6 29 M3 PA4 I/O TC - ADC1_4
USART2_CK,
EVENTOUT
TIM2_CH1/TIM2_ET,
15 21 F5 30 K4 PA5 I/O TC - SPI1_SCK/I2S1_CK, ADC1_5
EVENTOUT
TIM1_BKIN,
TIM3_CH1,
SPI1_MISO,
16 22 F4 31 L4 PA6 I/O FT - ADC1_6
I2S2_MCK,
SDIO_CMD,
EVENTOUT
TIM1_CH1N,
TIM3_CH2,
17 23 F3 32 M4 PA7 I/O FT - ADC1_7
SPI1_MOSI/I2S1_SD,
EVENTOUT

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STM32F411xC STM32F411xE Pinouts and pin description

Table 8. STM32F411xC/xE pin definitions (continued)

Pin number

I/O structure
Pin type
Pin name

UFBGA100L

Notes
WLCSP49

LQFP100
UQFN48

LQFP64

(function after Alternate functions Additional functions

reset)(1)

- 24 - 33 K5 PC4 I/O FT - EVENTOUT ADC1_14

- 25 - 34 L5 PC5 I/O FT - EVENTOUT ADC1_15
TIM1_CH2N,
TIM3_CH3,
18 26 G5 35 M5 PB0 I/O FT - ADC1_8
SPI5_SCK/I2S5_CK,
EVENTOUT
TIM1_CH3N,
TIM3_CH4,
19 27 G4 36 M6 PB1 I/O FT - ADC1_9
SPI5_NSS/I2S5_WS,
EVENTOUT
20 28 G3 37 L6 PB2 I/O FT - EVENTOUT BOOT1
TIM1_ETR,
- - - 38 M7 PE7 I/O FT - -
EVENTOUT
TIM1_CH1N,
- - - 39 L7 PE8 I/O FT - -
EVENTOUT
TIM1_CH1,
- - - 40 M8 PE9 I/O FT - -
EVENTOUT
TIM1_CH2N,
- - - 41 L8 PE10 I/O FT - -
EVENTOUT
TIM1_CH2,
SPI4_NSS/I2S4_WS,
- - - 42 M9 PE11 I/O FT - -
SPI5_NSS/I2S5_WS,
EVENTOUT
TIM1_CH3N,
SPI4_SCK/I2S4_CK,
- - - 43 L9 PE12 I/O FT - -
SPI5_SCK/I2S5_CK,
EVENTOUT
TIM1_CH3,
SPI4_MISO,
- - - 44 M10 PE13 I/O FT - -
SPI5_MISO,
EVENTOUT
TIM1_CH4,
SPI4_MOSI/I2S4_SD,
- - - 45 M11 PE14 I/O FT - -
SPI5_MOSI/I2S5_SD,
EVENTOUT
TIM1_BKIN,
- - - 46 M12 PE15 I/O FT - -
EVENTOUT

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56
Pinouts and pin description STM32F411xC STM32F411xE

Table 8. STM32F411xC/xE pin definitions (continued)

Pin number

I/O structure
Pin type
Pin name

UFBGA100L

Notes
WLCSP49

LQFP100
UQFN48

LQFP64

(function after Alternate functions Additional functions

reset)(1)

TIM2_CH3,
I2C2_SCL,
21 29 E3 47 L10 PB10 I/O FT - SPI2_SCK/I2S2_CK, -
I2S3_MCK, SDIO_D7,
EVENTOUT
TIM2_CH4,
I2C2_SDA,
- - - - K9 PB11 I/O FT - -
I2S2_CKIN,
EVENTOUT
22 30 G2 48 L11 VCAP1 S - - - -
23 31 D3 49 F12 VSS S - - - -
24 32 F2 50 G12 VDD S - - - -
TIM1_BKIN,
I2C2_SMBA,
SPI2_NSS/I2S2_WS,
25 33 E2 51 L12 PB12 I/O FT - -
SPI4_NSS/I2S4_WS,
SPI3_SCK/I2S3_CK,
EVENTOUT
TIM1_CH1N,
SPI2_SCK/I2S2_CK,
26 34 G1 52 K12 PB13 I/O FT - -
SPI4_SCK/I2S4_CK,
EVENTOUT
TIM1_CH2N,
SPI2_MISO,
27 35 F1 53 K11 PB14 I/O FT - I2S2ext_SD, -
SDIO_D6,
EVENTOUT
RTC_50Hz,
TIM1_CH3N,
28 36 E1 54 K10 PB15 I/O FT - SPI2_MOSI/I2S2_SD, RTC_REFIN
SDIO_CK,
EVENTOUT
- - - 55 - PD8 I/O FT - - -
- - - 56 K8 PD9 I/O FT - - -
- - - 57 J12 PD10 I/O FT - - -
- - - 58 J11 PD11 I/O FT - - -
TIM4_CH1,
- - - 59 J10 PD12 I/O FT - -
EVENTOUT

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STM32F411xC STM32F411xE Pinouts and pin description

Table 8. STM32F411xC/xE pin definitions (continued)

Pin number

I/O structure
Pin type
Pin name

UFBGA100L

Notes
WLCSP49

LQFP100
UQFN48

LQFP64

(function after Alternate functions Additional functions

reset)(1)

TIM4_CH2,
- - - 60 H12 PD13 I/O FT - -
EVENTOUT
TIM4_CH3,
- - - 61 H11 PD14 I/O FT - -
EVENTOUT
TIM4_CH4,
- - - 62 H10 PD15 I/O FT - -
EVENTOUT
TIM3_CH1,
I2S2_MCK,
- 37 - 63 E12 PC6 I/O FT - USART6_TX, -
SDIO_D6,
EVENTOUT
TIM3_CH2,
SPI2_SCK/I2S2_CK,
I2S3_MCK,
- 38 - 64 E11 PC7 I/O FT - -
USART6_RX,
SDIO_D7,
EVENTOUT
TIM3_CH3,
USART6_CK,
- 39 - 65 E10 PC8 I/O FT - -
SDIO_D0,
EVENTOUT
MCO_2, TIM3_CH4,
I2C3_SDA,
- 40 - 66 D12 PC9 I/O FT - I2S2_CKIN, -
SDIO_D1,
EVENTOUT
MCO_1, TIM1_CH1,
I2C3_SCL,
USART1_CK,
29 41 D1 67 D11 PA8 I/O FT - -
USB_FS_SOF,
SDIO_D1,
EVENTOUT
TIM1_CH2,
I2C3_SMBA,
USART1_TX,
30 42 D2 68 D10 PA9 I/O FT - OTG_FS_VBUS
USB_FS_VBUS,
SDIO_D2,
EVENTOUT

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Pinouts and pin description STM32F411xC STM32F411xE

Table 8. STM32F411xC/xE pin definitions (continued)

Pin number

I/O structure
Pin type
Pin name

UFBGA100L

Notes
WLCSP49

LQFP100
UQFN48

LQFP64

(function after Alternate functions Additional functions

reset)(1)

TIM1_CH3,
SPI5_MOSI/I2S5_SD,
31 43 C2 69 C12 PA10 I/O FT - USART1_RX, -
USB_FS_ID,
EVENTOUT
TIM1_CH4,
SPI4_MISO,
USART1_CTS,
32 44 C1 70 B12 PA11 I/O FT - -
USART6_TX,
USB_FS_DM,
EVENTOUT
TIM1_ETR,
SPI5_MISO,
USART1_RTS,
33 45 C3 71 A12 PA12 I/O FT - -
USART6_RX,
USB_FS_DP,
EVENTOUT
JTMS-SWDIO,
34 46 B3 72 A11 PA13 I/O FT - -
EVENTOUT
- - - 73 C11 VCAP2 S - - - -
35 47 B1 74 F11 VSS S - - - -
36 48 B2 75 G11 VDD S - - - -
JTCK-SWCLK,
37 49 A1 76 A10 PA14 I/O FT - -
EVENTOUT
JTDI,
TIM2_CH1/TIM2_ETR
,
38 50 A2 77 A9 PA15 I/O FT - SPI1_NSS/I2S1_WS, -
SPI3_NSS/I2S3_WS,
USART1_TX,
EVENTOUT
SPI3_SCK/I2S3_CK,
- 51 - 78 B11 PC10 I/O FT - SDIO_D2, -
EVENTOUT
I2S3ext_SD,
SPI3_MISO,
- 52 - 79 C10 PC11 I/O FT - -
SDIO_D3,
EVENTOUT
SPI3_MOSI/I2S3_SD,
- 53 - 80 B10 PC12 I/O FT - SDIO_CK, -
EVENTOUT

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STM32F411xC STM32F411xE Pinouts and pin description

Table 8. STM32F411xC/xE pin definitions (continued)

Pin number

I/O structure
Pin type
Pin name

UFBGA100L

Notes
WLCSP49

LQFP100
UQFN48

LQFP64

(function after Alternate functions Additional functions

reset)(1)

- - - 81 C9 PD0 I/O FT - EVENTOUT -

- - - 82 B9 PD1 I/O FT - EVENTOUT -
TIM3_ETR,
- 54 - 83 C8 PD2 I/O FT - SDIO_CMD, -
EVENTOUT
SPI2_SCK/I2S2_CK,
- - - 84 B8 PD3 I/O FT - USART2_CTS, -
EVENTOUT
USART2_RTS,
- - - 85 B7 PD4 I/O FT - -
EVENTOUT
USART2_TX,
- - - 86 A6 PD5 I/O FT - -
EVENTOUT
SPI3_MOSI/I2S3_SD,
- - - 87 B6 PD6 I/O FT - USART2_RX, -
EVENTOUT
USART2_CK,
- - - 88 A5 PD7 I/O FT - -
EVENTOUT
JTDO-SWO,
TIM2_CH2,
SPI1_SCK/I2S1_CK,
39 55 A3 89 A8 PB3 I/O FT - SPI3_SCK/I2S3_CK, -
USART1_RX,
I2C2_SDA,
EVENTOUT
JTRST, TIM3_CH1,
SPI1_MISO,
SPI3_MISO,
40 56 A4 90 A7 PB4 I/O FT - -
I2S3ext_SD,
I2C3_SDA, SDIO_D0,
EVENTOUT
TIM3_CH2,
I2C1_SMBA,
SPI1_MOSI/I2S1_SD,
41 57 B4 91 C5 PB5 I/O TC - -
SPI3_MOSI/I2S3_SD,
SDIO_D3,
EVENTOUT
TIM4_CH1,
I2C1_SCL,
42 58 C4 92 B5 PB6 I/O FT - -
USART1_TX,
EVENTOUT

DocID026289 Rev 4 45/146

56
Pinouts and pin description STM32F411xC STM32F411xE

Table 8. STM32F411xC/xE pin definitions (continued)

Pin number

I/O structure
Pin type
Pin name

UFBGA100L

Notes
WLCSP49

LQFP100
UQFN48

LQFP64

(function after Alternate functions Additional functions

reset)(1)

TIM4_CH2,
I2C1_SDA,
43 59 D4 93 B4 PB7 I/O FT - USART1_RX, -
SDIO_D0,
EVENTOUT
44 60 A5 94 A4 BOOT0 I B - - VPP
TIM4_CH3,
TIM10_CH1,
I2C1_SCL,
45 61 B5 95 A3 PB8 I/O FT - -
SPI5_MOSI/I2S5_SD,
I2C3_SDA, SDIO_D4,
EVENTOUT
TIM4_CH4,
TIM11_CH1,
I2C1_SDA,
46 62 C5 96 B3 PB9 I/O FT - -
SPI2_NSS/I2S2_WS,
I2C2_SDA, SDIO_D5,
EVENTOUT
TIM4_ETR,
- - - 97 C3 PE0 I/O FT - -
EVENTOUT
- - - 98 A2 PE1 I/O FT - EVENTOUT -
47 63 A6 99 - VSS S - - - -
- - B6 - H3 PDR_ON I FT - - -
48 64 A7 100 - VDD S - - - -
1. Function availability depends on the chosen device.
2. PC13, PC14 and PC15 are supplied through the power switch. Since the switch only sinks a limited amount of current (3
mA), the use of GPIOs PC13 to PC15 in output mode is limited:
- The speed should not exceed 2 MHz with a maximum load of 30 pF.
- These I/Os must not be used as a current source (e.g. to drive an LED).
3. Main function after the first backup domain power-up. Later on, it depends on the contents of the RTC registers even after
reset (because these registers are not reset by the main reset). For details on how to manage these I/Os, refer to the RTC
register description sections in the STM32F411xx reference manual.
4. FT = 5 V tolerant except when in analog mode or oscillator mode (for PC14, PC15, PH0 and PH1).
5. If the device is delivered in an UFBGA100 and the BYPASS_REG pin is set to VDD (Regulator off/internal reset ON mode),
then PA0 is used as an internal Reset (active low)

46/146 DocID026289 Rev 4

 STM32F411xC STM32F411xE
Table 9. Alternate function mapping

AF00 AF01 AF02 AF03 AF04 AF05 AF06 AF07 AF08 AF09 AF10 AF11 AF12 AF13 AF14 AF15

Port SPI2/I2S2/
SPI1/I2S1S
TIM9/ SPI3/ SPI3/I2S3/
TIM3/ I2C1/I2C2/ PI2/ I2C2/
SYS_AF TIM1/TIM2 TIM10/ I2S3/SPI4/ USART1/ USART6 OTG1_FS SDIO
TIM4/ TIM5 I2C3 I2S2/SPI3/ I2C3
TIM11 I2S4/SPI5/ USART2
I2S3
I2S5

TIM2_CH1/ USART2_ EVENT

PA0 - TIM2_ETR
TIM5_CH1 - - - - CTS
- - - - - - - OUT

SPI4_MOSI USART2_ EVENT

PA1 - TIM2_CH2 TIM5_CH2 - - /I2S4_SD
- RTS
- - - - - - - OUT

USART2_ EVENT
PA2 - TIM2_CH3 TIM5_CH3 TIM9_CH1 - I2S2_CKIN - TX
- - - - - - - OUT

USART2_ EVENT
PA3 - TIM2_CH4 TIM5_CH4 TIM9_CH2 - I2S2_MCK - RX
- - - - - - - OUT
DocID026289 Rev 4

SPI1_NSS/I SPI3_NSS/I2 USART2_ EVENT

PA4 - - - - - 2S1_WS S3_WS CK
- - - - - - - OUT

TIM2_CH1/ SPI1_SCK/I EVENT

PA5 - TIM2_ETR
- - - 2S1_CK
- - - - - - - - - OUT
Port A

SDIO_ EVENT
PA6 - TIM1_BKIN TIM3_CH1 - - SPI1_MISO I2S2_MCK - - - - - CMD
- - OUT

SPI1_MOSI EVENT
PA7 - TIM1_CH1N TIM3_CH2 - - /I2S1_SD
- - - - - - - - - OUT

USART1_ USB_FS_ SDIO_ EVENT

PA8 MCO_1 TIM1_CH1 - - I2C3_SCL - - CK
- - SOF
- D1
- - OUT

I2C3_SMB USART1_ USB_FS_ SDIO_ EVENT

PA9 - TIM1_CH2 - - A
- - TX
- - VBUS
- D2
- - OUT

Pinouts and pin description

SPI5_MOSI/I USART1_ USB_FS_I EVENT
PA10 - TIM1_CH3 - - - - 2S5_SD RX
- - D
- - - - OUT

USART1_ USART6_ USB_FS_ EVENT

PA11 - TIM1_CH4 - - - - SPI4_MISO
CTS TX
- DM
- - - - OUT

USART1_ USART6_ USB_FS_ EVENT

PA12 - TIM1_ETR - - - - SPI5_MISO
RTS RX
- DP
- - - - OUT
47/146
 Table 9. Alternate function mapping (continued)

Pinouts and pin description

48/146 AF00 AF01 AF02 AF03 AF04 AF05 AF06 AF07 AF08 AF09 AF10 AF11 AF12 AF13 AF14 AF15

Port SPI2/I2S2/
SPI1/I2S1S
TIM9/ SPI3/ SPI3/I2S3/
TIM3/ I2C1/I2C2/ PI2/ I2C2/
SYS_AF TIM1/TIM2 TIM10/ I2S3/SPI4/ USART1/ USART6 OTG1_FS SDIO
TIM4/ TIM5 I2C3 I2S2/SPI3/ I2C3
TIM11 I2S4/SPI5/ USART2
I2S3
I2S5

JTMS- EVENT
PA13
SWDIO
- - - - - - - - - - - - - - OUT
Port A

JTCK- EVENT
PA14
SWCLK
- - - - - - - - - - - - - - OUT

TIM2_CH1/ SPI1_NSS/I SPI3_NSS/I2 USART1_ EVENT

PA15 JTDI
TIM2_ETR
- - - 2S1_WS S3_WS TX
- - - - - - - OUT

SPI5_SCK/I2 EVENT
PB0 - TIM1_CH2N TIM3_CH3 - - - S5_CK
- - - - - - - OUT
DocID026289 Rev 4

SPI5_NSS/I2 EVENT
PB1 - TIM1_CH3N TIM3_CH4 - - - S5_WS
- - - - - - - OUT

EVENT
PB2 - - - - - - - - - - - - - - - OUT

JTDO- SPI1_SCK/I SPI3_SCK/I2 USART1_ EVENT

PB3
SWO
TIM2_CH2 - - - 2S1_CK S3_CK RX
- I2C2_SDA - - - - - OUT

I2S3ext_S SDIO_ EVENT

PB4 JTRST TIM3_CH1 - - SPI1_MISO SPI3_MISO
D
- I2C3_SDA
D0
- - OUT
Port B

I2C1_SMB SPI1_MOSI SPI3_MOSI/I SDIO_ EVENT

PB5 - - TIM3_CH2 - A /I2S1_SD 2S3_SD
- - - - D3
- - OUT

USART1_ EVENT
PB6 - - TIM4_CH1 - I2C1_SCL - - TX
- - - - - - OUT

STM32F411xC STM32F411xE
USART1_ SDIO_ EVENT
PB7 - - TIM4_CH2 - I2C1_SDA - - RX
- - - - D0
- - OUT

SPI5_MOSI/I SDIO_ EVENT

PB8 - - TIM4_CH3 TIM10_CH1 I2C1_SCL - 2S5_SD
- - I2C3_SDA - - D4
- - OUT

SPI2_NSS/I SDIO_ EVENT

PB9 - - TIM4_CH4 TIM11_CH1 I2C1_SDA
2S2_WS
- - - I2C2_SDA - - D5
- - OUT
 Table 9. Alternate function mapping (continued)

STM32F411xC STM32F411xE
AF00 AF01 AF02 AF03 AF04 AF05 AF06 AF07 AF08 AF09 AF10 AF11 AF12 AF13 AF14 AF15

Port SPI2/I2S2/
SPI1/I2S1S
TIM9/ SPI3/ SPI3/I2S3/
TIM3/ I2C1/I2C2/ PI2/ I2C2/
SYS_AF TIM1/TIM2 TIM10/ I2S3/SPI4/ USART1/ USART6 OTG1_FS SDIO
TIM4/ TIM5 I2C3 I2S2/SPI3/ I2C3
TIM11 I2S4/SPI5/ USART2
I2S3
I2S5

SPI2_SCK/I SDIO_ EVENT

PB10 - TIM2_CH3 - - I2C2_SCL
2S2_CK
I2S3_MCK - - - - - D7
- - OUT

EVENT
PB11 - TIM2_CH4 - - I2C2_SDA I2S2_CKIN - - - - - - - - - OUT

I2C2_SMB SPI2_NSS/I SPI4_NSS/I2 SPI3_SCK EVENT

PB12 - TIM1_BKIN - - A 2S2_WS S4_WS /I2S3_CK
- - - - - - - OUT
Port B

SPI2_SCK/I SPI4_SCK/I2 EVENT

PB13 - TIM1_CH1N - - - 2S2_CK S4_CK
- - - - - - - - OUT
DocID026289 Rev 4

SDIO_ EVENT
PB14 - TIM1_CH2N - - - SPI2_MISO I2S2ext_SD - - - - - D6
- - OUT

RTC_50H SPI2_MOSI SDIO_ EVENT

PB15
z
TIM1_CH3N - - - /I2S2_SD
- - - - - - CK
- - OUT

Pinouts and pin description

49/146
 Table 9. Alternate function mapping (continued)

Pinouts and pin description

50/146 AF00 AF01 AF02 AF03 AF04 AF05 AF06 AF07 AF08 AF09 AF10 AF11 AF12 AF13 AF14 AF15

Port SPI2/I2S2/
SPI1/I2S1S
TIM9/ SPI3/ SPI3/I2S3/
TIM3/ I2C1/I2C2/ PI2/ I2C2/
SYS_AF TIM1/TIM2 TIM10/ I2S3/SPI4/ USART1/ USART6 OTG1_FS SDIO
TIM4/ TIM5 I2C3 I2S2/SPI3/ I2C3
TIM11 I2S4/SPI5/ USART2
I2S3
I2S5

EVENT
PC0 - - - - - - - - - - - - - - - OUT

EVENT
PC1 - - - - - - - - - - - - - - - OUT

EVENT
PC2 - - - - - SPI2_MISO I2S2ext_SD - - - - - - - - OUT

SPI2_MOSI EVENT
PC3 - - - - - /I2S2_SD
- - - - - - - - - OUT
DocID026289 Rev 4

EVENT
PC4 - - - - - - - - - - - - - - OUT
Port C

EVENT
PC5 - - - - - - - - - - - - - - OUT

USART6_ SDIO_ EVENT

PC6 - - TIM3_CH1 - - I2S2_MCK - - TX
- - - D6
- - OUT

SPI2_SCK/I USART6_ SDIO_ EVENT

PC7 - - TIM3_CH2 - - 2S2_CK
I2S3_MCK - RX
- - - D7
- - OUT

USART6_ SDIO_ EVENT

PC8 - - TIM3_CH3 - - - - - CK
- - - D0
- - OUT

SDIO_ EVENT
PC9 MCO_2 - TIM3_CH4 - I2C3_SDA I2S2_CKIN - - - - - D1
- - OUT

STM32F411xC STM32F411xE
SPI3_SCK/I2 SDIO_ EVENT
PC10 - - - - - - S3_CK
- - - - - D2
- - OUT

SDIO_ EVENT
PC11 - - - - - I2S3ext_SD SPI3_MISO - - - - - D3
- - OUT
Port C

SPI3_MOSI/I SDIO_ EVENT

PC12 - - - - - - 2S3_SD
- - - - - CK
- - OUT

PC13 - - - - - - - - - - - - - - - -

PC14 - - - - - - - - - - - - - - - -
 Table 9. Alternate function mapping (continued)

STM32F411xC STM32F411xE
AF00 AF01 AF02 AF03 AF04 AF05 AF06 AF07 AF08 AF09 AF10 AF11 AF12 AF13 AF14 AF15

Port SPI2/I2S2/
SPI1/I2S1S
TIM9/ SPI3/ SPI3/I2S3/
TIM3/ I2C1/I2C2/ PI2/ I2C2/
SYS_AF TIM1/TIM2 TIM10/ I2S3/SPI4/ USART1/ USART6 OTG1_FS SDIO
TIM4/ TIM5 I2C3 I2S2/SPI3/ I2C3
TIM11 I2S4/SPI5/ USART2
I2S3
I2S5

PC15 - - - - - - - - - - - - - - - -

EVENT
PD0 - - - - - - - - - - - - - - - OUT

EVENT
PD1 - - - - - - - - - - - - - - - OUT

SDIO_ EVENT
PD2 - - TIM3_ETR - - - - - - - - - CMD OUT

SPI2_SCK/I USART2_ EVENT

DocID026289 Rev 4

PD3 - - - - - 2S2_CK CTS

- - - - - - - OUT

USART2_ EVENT
PD4 - - - - - - - RTS
- - - - - - - OUT

USART2_ EVENT
Port D

PD5 - - - - - - - TX
- - - - - - - OUT

SPI3_MOSI USART2_ EVENT

PD6 - - - - - /I2S3_SD
- RX
- - - - - - - OUT

USART2_ EVENT
PD7 - - - - - - - CK
- - - - - - - OUT

EVENT
PD8 - - - - - - - - - - - - - - - OUT

EVENT
- - - - - - - - - - - - - - -

Pinouts and pin description

PD9
OUT

EVENT
PD10 - - - - - - - - - - - - - - - OUT

EVENT
PD11 - - - - - - - - - - - - - - - OUT
51/146
 Table 9. Alternate function mapping (continued)

Pinouts and pin description

52/146 AF00 AF01 AF02 AF03 AF04 AF05 AF06 AF07 AF08 AF09 AF10 AF11 AF12 AF13 AF14 AF15

Port SPI2/I2S2/
SPI1/I2S1S
TIM9/ SPI3/ SPI3/I2S3/
TIM3/ I2C1/I2C2/ PI2/ I2C2/
SYS_AF TIM1/TIM2 TIM10/ I2S3/SPI4/ USART1/ USART6 OTG1_FS SDIO
TIM4/ TIM5 I2C3 I2S2/SPI3/ I2C3
TIM11 I2S4/SPI5/ USART2
I2S3
I2S5

EVENT
PD12 - - TIM4_CH1 - - - - - - - - - - - - OUT

EVENT
PD13 - - TIM4_CH2 - - - - - - - - - - - - OUT
Port D

EVENT
PD14 - - TIM4_CH3 - - - - - - - - - - - - OUT

EVENT
PD15 - - TIM4_CH4 - - - - - - - - - - - - OUT
DocID026289 Rev 4

EVENT
PE0 - - TIM4_ETR - - - - - - - - - - - - OUT

EVENT
PE1 - - - - - - - - - - - - - - OUT

TRACECL SPI4_SCK/I SPI5_SCK/I2 EVENT

PE2
K
- - - - 2S4_CK S5_CK
- - - - - - - - OUT

EVENT
PE3 TRACED0 - - - - - - - - - - - - - - OUT

SPI4_NSS/I SPI5_NSS/I2 EVENT

PE4 TRACED1 - - - - 2S4_WS S5_WS
- - - - - - - - OUT
Port E

EVENT
PE5 TRACED2 - - TIM9_CH1 - SPI4_MISO SPI5_MISO - - - - - - - - OUT

STM32F411xC STM32F411xE
SPI4_MOSI SPI5_MOSI/I EVENT
PE6 TRACED3 - - TIM9_CH2 - /I2S4_SD 2S5_SD
- - - - - - - - OUT

EVENT
PE7 - TIM1_ETR - - - - - - - - - - - - - OUT

EVENT
PE8 - TIM1_CH1N - - - - - - - - - - - - - OUT

EVENT
PE9 - TIM1_CH1 - - - - - - - - - - - - - OUT

EVENT
PE10 - TIM1_CH2N - - - - - - - - - - - - - OUT
 Table 9. Alternate function mapping (continued)

STM32F411xC STM32F411xE
AF00 AF01 AF02 AF03 AF04 AF05 AF06 AF07 AF08 AF09 AF10 AF11 AF12 AF13 AF14 AF15

Port SPI2/I2S2/
SPI1/I2S1S
TIM9/ SPI3/ SPI3/I2S3/
TIM3/ I2C1/I2C2/ PI2/ I2C2/
SYS_AF TIM1/TIM2 TIM10/ I2S3/SPI4/ USART1/ USART6 OTG1_FS SDIO
TIM4/ TIM5 I2C3 I2S2/SPI3/ I2C3
TIM11 I2S4/SPI5/ USART2
I2S3
I2S5

SPI4_NSS/I SPI5_NSS/I2 EVENT

PE11 - TIM1_CH2 - - - 2S4_WS S5_WS
- - - - - - - - OUT

SPI4_SCK/I SPI5_SCK/I2 EVENT

PE12 - TIM1_CH3N - - - 2S4_CK S5_CK
- - - - - - - - OUT
Port E

EVENT
PE13 - TIM1_CH3 - - - SPI4_MISO SPI5_MISO - - - - - - - - OUT

SPI4_MOSI SPI5_MOSI/I EVENT

PE14 - TIM1_CH4 - - - /I2S4_SD 2S5_SD
- - - - - - - - OUT
DocID026289 Rev 4

EVENT
PE15 - TIM1_BKIN - - - - - - - - - - - - - OUT

PH0 - - - - - - - - - - - - - - - -
Port H

PH1 - - - - - - - - - - - - - - - -

Pinouts and pin description

53/146
Memory mapping STM32F411xC STM32F411xE

5 Memory mapping

The memory map is shown in Figure 14.

Figure 14. Memory map

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[')))))))
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5HVHUYHG [[)))))))
[))

[)))))))) 0E\WH
EORFN
&RUWH[0 V
LQWHUQDO $+%
[( SHULSKHUDOV
[')))))))
0E\WH
EORFN
1RWXVHG
[& [
[%))))))) 5HVHUYHG [&[))))
[%))
5HVHUYHG

[
[)))))))
0E\WH $3%
EORFN
3HULSKHUDOV
[
[)))))))
0E\WH
EORFN
65$0 5HVHUYHG [[)))))))
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65$0 .%DOLDVHG [[ 5HVHUYHG [[))))
[))))))) E\ELWEDQGLQJ
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0E\WH 5HVHUYHG [)))&[)))))))
EORFN 2SWLRQE\WHV [)))&[)))&
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5HVHUYHG [)))$[)))%)))
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5HVHUYHG [[))())))
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06Y9

Table 10. STM32F411xC/xE register boundary addresses

Bus Boundary address Peripheral

0xE010 0000 - 0xFFFF FFFF Reserved

®
Cortex -M4 0xE000 0000 - 0xE00F FFFF Cortex-M4 internal peripherals
0x5004 0000 - 0xDFFF FFFF Reserved
AHB2 0x5000 0000 - 0x5003 FFFF USB OTG FS

54/146 DocID026289 Rev 4

STM32F411xC STM32F411xE Memory mapping

Table 10. STM32F411xC/xE register boundary addresses (continued)

Bus Boundary address Peripheral

0x4002 6800 - 0x4FFF FFFF Reserved

0x4002 6400 - 0x4002 67FF DMA2
0x4002 6000 - 0x4002 63FF DMA1
0x4002 5000 - 0x4002 4FFF Reserved
0x4002 3C00 - 0x4002 3FFF Flash interface register
0x4002 3800 - 0x4002 3BFF RCC
0x4002 3400 - 0x4002 37FF Reserved
0x4002 3000 - 0x4002 33FF CRC
AHB1
0x4002 2000 - 0x4002 2FFF Reserved
0x4002 1C00 - 0x4002 1FFF GPIOH
0x4002 1400 - 0x4002 1BFF Reserved
0x4002 1000 - 0x4002 13FF GPIOE
0x4002 0C00 - 0x4002 0FFF GPIOD
0x4002 0800 - 0x4002 0BFF GPIOC
0x4002 0400 - 0x4002 07FF GPIOB
0x4002 0000 - 0x4002 03FF GPIOA
0x4001 5400- 0x4001 FFFF Reserved
0x4001 5000 - 0x4001 53FFF SPI5/I2S5
0x4001 4800 - 0x4001 4BFF TIM11
0x4001 4400 - 0x4001 47FF TIM10
0x4001 4000 - 0x4001 43FF TIM9
0x4001 3C00 - 0x4001 3FFF EXTI
0x4001 3800 - 0x4001 3BFF SYSCFG
0x4001 3400 - 0x4001 37FF SPI4/I2S4
0x4001 3000 - 0x4001 33FF SPI1/I2S1
APB2
0x4001 2C00 - 0x4001 2FFF SDIO
0x4001 2400 - 0x4001 2BFF Reserved
0x4001 2000 - 0x4001 23FF ADC1
0x4001 1800 - 0x4001 1FFF Reserved
0x4001 1400 - 0x4001 17FF USART6
0x4001 1000 - 0x4001 13FF USART1
0x4001 0400 - 0x4001 0FFF Reserved
0x4001 0000 - 0x4001 03FF TIM1
0x4000 7400 - 0x4000 FFFF Reserved

DocID026289 Rev 4 55/146

56
Memory mapping STM32F411xC STM32F411xE

Table 10. STM32F411xC/xE register boundary addresses (continued)

Bus Boundary address Peripheral

0x4000 7000 - 0x4000 73FF PWR

0x4000 6000 - 0x4000 6FFF Reserved
0x4000 5C00 - 0x4000 5FFF I2C3
0x4000 5800 - 0x4000 5BFF I2C2
0x4000 5400 - 0x4000 57FF I2C1
0x4000 4800 - 0x4000 53FF Reserved
0x4000 4400 - 0x4000 47FF USART2
0x4000 4000 - 0x4000 43FF I2S3ext
0x4000 3C00 - 0x4000 3FFF SPI3 / I2S3
APB1 0x4000 3800 - 0x4000 3BFF SPI2 / I2S2
0x4000 3400 - 0x4000 37FF I2S2ext
0x4000 3000 - 0x4000 33FF IWDG
0x4000 2C00 - 0x4000 2FFF WWDG
0x4000 2800 - 0x4000 2BFF RTC & BKP Registers
0x4000 1000 - 0x4000 27FF Reserved
0x4000 0C00 - 0x4000 0FFF TIM5
0x4000 0800 - 0x4000 0BFF TIM4
0x4000 0400 - 0x4000 07FF TIM3
0x4000 0000 - 0x4000 03FF TIM2

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STM32F411xC STM32F411xE Electrical characteristics

6 Electrical characteristics

6.1 Parameter conditions

Unless otherwise specified, all voltages are referenced to VSS.

6.1.1 Minimum and maximum values

Unless otherwise specified the minimum and maximum values are guaranteed in the worst
conditions of ambient temperature, supply voltage and frequencies by tests in production on
100% of the devices with an ambient temperature at TA = 25 °C and TA = TAmax (given by
the selected temperature range).
Data based on characterization results, design simulation and/or technology characteristics
are indicated in the table footnotes and are not tested in production. Based on
characterization, the minimum and maximum values refer to sample tests and represent the
mean value plus or minus three times the standard deviation (mean ±3 σ).

6.1.2 Typical values

Unless otherwise specified, typical data are based on TA = 25 °C, VDD = 3.3 V (for the
1.7 V ≤ VDD ≤ 3.6 V voltage range). They are given only as design guidelines and are not
tested.
Typical ADC accuracy values are determined by characterization of a batch of samples from
a standard diffusion lot over the full temperature range, where 95% of the devices have an
error less than or equal to the value indicated (mean ±2 σ).

6.1.3 Typical curves

Unless otherwise specified, all typical curves are given only as design guidelines and are
not tested.

6.1.4 Loading capacitor

The loading conditions used for pin parameter measurement are shown in Figure 15.

Figure 15. Pin loading conditions

-#5 PIN

#   P&

-36

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119
Electrical characteristics STM32F411xC STM32F411xE

6.1.5 Pin input voltage

The input voltage measurement on a pin of the device is described in Figure 16.

Figure 16. Input voltage measurement

-#5 PIN

6).

-36

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STM32F411xC STM32F411xE Electrical characteristics

6.1.6 Power supply scheme

Figure 17. Power supply scheme

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1. To connect PDR_ON pin, refer to Section 3.15: Power supply supervisor.

2. The 4.7 µF ceramic capacitor must be connected to one of the VDD pin.
3. VCAP_2 pad is only available on LQFP100 and UFBGA100 packages.
4. VDDA=VDD and VSSA=VSS.
Caution: Each power supply pair (for example VDD/VSS, VDDA/VSSA) must be decoupled with filtering
ceramic capacitors as shown above. These capacitors must be placed as close as possible
to, or below, the appropriate pins on the underside of the PCB to ensure good operation of
the device. It is not recommended to remove filtering capacitors to reduce PCB size or cost.
This might cause incorrect operation of the device.

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6.1.7 Current consumption measurement

Figure 18. Current consumption measurement scheme

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6.2 Absolute maximum ratings

Stresses above the absolute maximum ratings listed in Table 11: Voltage characteristics,
Table 12: Current characteristics, and Table 13: Thermal characteristics may cause
permanent damage to the device. These are stress ratings only and functional operation of
the device at these conditions is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.

Table 11. Voltage characteristics

Symbol Ratings Min Max Unit

External main supply voltage (including VDDA, VDD and

VDD–VSS –0.3 4.0
VBAT)(1)
Input voltage on FT and TC pins(2) VSS–0.3 VDD+4.0 V
VIN Input voltage on any other pin VSS–0.3 4.0
Input voltage for BOOT0 VSS 9.0
|ΔVDDx| Variations between different VDD power pins - 50
mV
|VSSX −VSS| Variations between all the different ground pins - 50
see Section 6.3.14:
Absolute maximum
VESD(HBM) Electrostatic discharge voltage (human body model)
ratings (electrical
sensitivity)
1. All main power (VDD, VDDA) and ground (VSS, VSSA) pins must always be connected to the external power
supply, in the permitted range.
2. VIN maximum value must always be respected. Refer to Table 12 for the values of the maximum allowed
injected current.

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Table 12. Current characteristics

Symbol Ratings Max. Unit

ΣIVDD Total current into sum of all VDD_x power lines (source)(1) 160
Σ IVSS (1)
Total current out of sum of all VSS_x ground lines (sink) -160
(1)
IVDD Maximum current into each VDD_x power line (source) 100
IVSS Maximum current out of each VSS_x ground line (sink)(1) -100
Output current sunk by any I/O and control pin 25
IIO
Output current sourced by any I/O and control pin -25 mA
(2)
Total output current sunk by sum of all I/O and control pins 120
ΣIIO
Total output current sourced by sum of all I/Os and control pins(2) -120
(4)
Injected current on FT and TC pins
IINJ(PIN) (3) –5/+0
Injected current on NRST and B pins (4)
ΣIINJ(PIN) Total injected current (sum of all I/O and control pins)(5) ±25
1. All main power (VDD, VDDA) and ground (VSS, VSSA) pins must always be connected to the external power supply, in the
permitted range.
2. This current consumption must be correctly distributed over all I/Os and control pins.
3. Negative injection disturbs the analog performance of the device. See note in Section 6.3.20: 12-bit ADC characteristics.
4. Positive injection is not possible on these I/Os and does not occur for input voltages lower than the specified maximum
value.
5. When several inputs are submitted to a current injection, the maximum ΣIINJ(PIN) is the absolute sum of the positive and
negative injected currents (instantaneous values).

Table 13. Thermal characteristics

Symbol Ratings Value Unit

TSTG Storage temperature range –65 to +150

TJ Maximum junction temperature 125
°C
Maximum lead temperature during soldering
TLEAD (WLCSP49, LQFP64/100, UFQFPN48, see note (1)
UFBGA100)
1. Compliant with JEDEC Std J-STD-020D (for small body, Sn-Pb or Pb assembly), the ST ECOPACK®
7191395 specification, and the European directive on Restrictions on Hazardous Substances (ROHS
directive 2011/65/EU, July 2011).

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6.3 Operating conditions

6.3.1 General operating conditions

Table 14. General operating conditions

Symbol Parameter Conditions Min Typ Max Unit

Power Scale3: Regulator ON,

0 - 64
VOS[1:0] bits in PWR_CR register = 0x01
Power Scale2: Regulator ON,
fHCLK Internal AHB clock frequency 0 - 84 MHz
VOS[1:0] bits in PWR_CR register = 0x10
Power Scale1: Regulator ON,
0 - 100
VOS[1:0] bits in PWR_CR register = 0x11
fPCLK1 Internal APB1 clock frequency 0 - 50 MHz
fPCLK2 Internal APB2 clock frequency 0 - 100 MHz
VDD Standard operating voltage 1.7(1) - 3.6 V
Analog operating voltage
(ADC limited to 1.2 M 1.7(1) - 2.4
samples)
VDDA(2)(3) Must be the same potential as VDD(4) V
Analog operating voltage
(ADC limited to 2.4 M 2.4 - 3.6
samples)
VBAT Backup operating voltage 1.65 - 3.6 V
VOS[1:0] bits in PWR_CR register = 0x01 1.08
(5) 1.14 1.20(5)
Max frequency 64 MHz
Regulator ON: 1.2 V internal VOS[1:0] bits in PWR_CR register = 0x10 1.20
V12 voltage on VCAP1/VCAP2 (5) 1.26 1.32(5) V
Max frequency 84 MHz
pins
VOS[1:0] bits in PWR_CR register = 0x11
1.26 1.32 1.38
Max frequency 100 MHz
Max frequency 64 MHz 1.10 1.14 1.20
Regulator OFF: 1.2 V external
V12 voltage must be supplied on Max frequency 84 MHz 1.20 1.26 1.32 V
VCAP1/VCAP2 pins
Max frequency 100 MHz 1.26 1.32 1.38

Input voltage on RST, FT and 2 V ≤ VDD ≤ 3.6 V –0.3 - 5.5

VIN TC pins(6) VDD ≤ 2 V –0.3 - 5.2 V
Input voltage on BOOT0 pin - 0 - 9
UFQFPN48 - - 625
WLCSP49 - - 392
Maximum allowed package
PD LQFP64 - - 313 mW
power dissipation for suffix 7(7)
LQFP100 - - 465
UFBGA100 - - 323

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Table 14. General operating conditions (continued)

Symbol Parameter Conditions Min Typ Max Unit

Ambient temperature for 6 Maximum power dissipation –40 - 85

suffix version Low power dissipation(8) –40 - 105
TA
Ambient temperature for 7 Maximum power dissipation –40 - 105
°C
suffix version Low power dissipation (8)
–40 - 125
6 suffix version –40 - 105
TJ Junction temperature range
7 suffix version –40 - 125
1. VDD/VDDA minimum value of 1.7 V with the use of an external power supply supervisor (refer to Section 3.15.2: Internal
reset OFF).
2. When the ADC is used, refer to Table 65: ADC characteristics.
3. If VREF+ pin is present, it must respect the following condition: VDDA-VREF+ < 1.2 V.
4. It is recommended to power VDD and VDDA from the same source. A maximum difference of 300 mV between VDD and
VDDA can be tolerated during power-up and power-down operation.
5. Guaranteed by test in production
6. To sustain a voltage higher than VDD+0.3, the internal Pull-up and Pull-Down resistors must be disabled
7. If TA is lower, higher PD values are allowed as long as TJ does not exceed TJmax.
8. In low power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax.

Table 15. Features depending on the operating power supply range

Maximum
Flash
Operating memory Maximum Flash Possible
Clock output
power ADC access memory access Flash
I/O operation frequency on
supply operation frequency frequency with memory
I/O pins(3)
range with no wait wait states (1)(2) operations
states
(fFlashmax)

8-bit erase
Conversion
VDD =1.7 to 100 MHz with 6 – No I/O and program
time up to 16 MHz(5) up to 30 MHz
2.1 V(4) wait states compensation operations
1.2 Msps
only
Conversion 16-bit erase
VDD = 2.1 to 100 MHz with 5 – No I/O
time up to 18 MHz up to 30 MHz and program
2.4 V wait states compensation
1.2 Msps operations
Conversion – I/O 16-bit erase
VDD = 2.4 to 100 MHz with 4
time up to 24 MHz compensation up to 50 MHz and program
2.7 V wait states
2.4 Msps works operations
– up to
100 MHz
when VDD =
Conversion – I/O 32-bit erase
VDD = 2.7 to 100 MHz with 3 3.0 to 3.6 V
time up to 30 MHz compensation and program
3.6 V(6) wait states – up to
2.4 Msps works operations
50 MHz
when VDD =
2.7 to 3.0 V

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1. Applicable only when the code is executed from Flash memory. When the code is executed from RAM, no wait state is
required.
2. Thanks to the ART accelerator and the 128-bit Flash memory, the number of wait states given here does not impact the
execution speed from Flash memory since the ART accelerator allows to achieve a performance equivalent to 0 wait state
program execution.
3. Refer to Table 55: I/O AC characteristics for frequencies vs. external load.
4. VDD/VDDA minimum value of 1.7 V, with the use of an external power supply supervisor (refer to Section 3.15.2: Internal
reset OFF).
5. Prefetch is not available. Refer to AN3430 application note for details on how to adjust performance and power.
6. The voltage range for the USB full speed embedded PHY can drop down to 2.7 V. However the electrical characteristics of
D- and D+ pins will be degraded between 2.7 and 3 V.

6.3.2 VCAP1/VCAP2 external capacitors

Stabilization for the main regulator is achieved by connecting the external capacitor CEXT to
the VCAP1 and VCAP2 pins. For packages supporting only 1 VCAP pin, the 2 CEXT
capacitors are replaced by a single capacitor.
CEXT is specified in Table 16.

Figure 19. External capacitor CEXT

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1. Legend: ESR is the equivalent series resistance.

Table 16. VCAP1/VCAP2 operating conditions(1)

Symbol Parameter Conditions

Capacitance of external capacitor with a single VCAP

CEXT 4.7 µF
pin available
ESR of external capacitor with a single VCAP pin
ESR <1Ω
available
1. When bypassing the voltage regulator, the two 2.2 µF VCAP capacitors are not required and should be
replaced by two 100 nF decoupling capacitors.

6.3.3 Operating conditions at power-up/power-down (regulator ON)

Subject to general operating conditions for TA.

Table 17. Operating conditions at power-up / power-down (regulator ON)

Symbol Parameter Min Max Unit

VDD rise time rate 20 ∞

tVDD µs/V
VDD fall time rate 20 ∞

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6.3.4 Operating conditions at power-up / power-down (regulator OFF)

Subject to general operating conditions for TA.

Table 18. Operating conditions at power-up / power-down (regulator OFF)(1)

Symbol Parameter Conditions Min Max Unit

VDD rise time rate Power-up 20 ∞

tVDD
VDD fall time rate Power-down 20 ∞
µs/V
VCAP_1 and VCAP_2 rise time rate Power-up 20 ∞
tVCAP
VCAP_1 and VCAP_2 fall time rate Power-down 20 ∞
1. To reset the internal logic at power-down, a reset must be applied on pin PA0 when VDD reach below
1.08 V.

Note: This feature is only available for UFBGA100 package.

6.3.5 Embedded reset and power control block characteristics

The parameters given in Table 19 are derived from tests performed under ambient
temperature and VDD supply voltage @ 3.3V.

Table 19. Embedded reset and power control block characteristics

Symbol Parameter Conditions Min Typ Max Unit

PLS[2:0]=000 (rising edge) 2.09 2.14 2.19

PLS[2:0]=000 (falling edge) 1.98 2.04 2.08
PLS[2:0]=001 (rising edge) 2.23 2.30 2.37
PLS[2:0]=001 (falling edge) 2.13 2.19 2.25
PLS[2:0]=010 (rising edge) 2.39 2.45 2.51
PLS[2:0]=010 (falling edge) 2.29 2.35 2.39
PLS[2:0]=011 (rising edge) 2.54 2.60 2.65

Programmable voltage PLS[2:0]=011 (falling edge) 2.44 2.51 2.56

VPVD V
detector level selection PLS[2:0]=100 (rising edge) 2.70 2.76 2.82
PLS[2:0]=100 (falling edge) 2.59 2.66 2.71
PLS[2:0]=101 (rising edge) 2.86 2.93 2.99
PLS[2:0]=101 (falling edge) 2.65 2.84 3.02
PLS[2:0]=110 (rising edge) 2.96 3.03 3.10
PLS[2:0]=110 (falling edge) 2.85 2.93 2.99
PLS[2:0]=111 (rising edge) 3.07 3.14 3.21
PLS[2:0]=111 (falling edge) 2.95 3.03 3.09
(2)
VPVDhyst PVD hysteresis - 100 - mV

Power-on/power-down Falling edge 1.60(1) 1.68 1.76

VPOR/PDR V
reset threshold Rising edge 1.64 1.72 1.80

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Table 19. Embedded reset and power control block characteristics (continued)
Symbol Parameter Conditions Min Typ Max Unit

VPDRhyst(2) PDR hysteresis - 40 - mV

Brownout level 1 Falling edge 2.13 2.19 2.24

VBOR1
threshold Rising edge 2.23 2.29 2.33

Brownout level 2 Falling edge 2.44 2.50 2.56

VBOR2 V
threshold Rising edge 2.53 2.59 2.63

Brownout level 3 Falling edge 2.75 2.83 2.88

VBOR3
threshold Rising edge 2.85 2.92 2.97
(2)
VBORhyst BOR hysteresis - 100 - mV
TRSTTEMPO
(2)(3) POR reset timing 0.5 1.5 3.0 ms

In-Rush current on
voltage regulator power-
IRUSH(2) - 160 200 mA
on (POR or wakeup from
Standby)
In-Rush energy on
(2) voltage regulator power- VDD = 1.7 V, TA = 105 °C,
ERUSH - - 5.4 µC
on (POR or wakeup from IRUSH = 171 mA for 31 µs
Standby)
1. The product behavior is guaranteed by design down to the minimum VPOR/PDR value.
2. Guaranteed by design, not tested in production.
3. The reset timing is measured from the power-on (POR reset or wakeup from VBAT) to the instant when first
instruction is fetched by the user application code.

6.3.6 Supply current characteristics

The current consumption is a function of several parameters and factors such as the
operating voltage, ambient temperature, I/O pin loading, device software configuration,
operating frequencies, I/O pin switching rate, program location in memory and executed
binary code.
The current consumption is measured as described in Figure 18: Current consumption
measurement scheme.
All the run-mode current consumption measurements given in this section are performed
with a reduced code that gives a consumption equivalent to CoreMark code.

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Typical and maximum current consumption

The MCU is placed under the following conditions:
• All I/O pins are in input mode with a static value at VDD or VSS (no load).
• All peripherals are disabled except if it is explicitly mentioned.
• The Flash memory access time is adjusted to both fHCLK frequency and VDD ranges
(refer to Table 15: Features depending on the operating power supply range).
• The voltage scaling is adjusted to fHCLK frequency as follows:
– Scale 3 for fHCLK ≤ 64 MHz
– Scale 2 for 64 MHz < fHCLK ≤ 84 MHz
– Scale 1 for 84 MHz < fHCLK ≤ 100 MHz
• The system clock is HCLK, fPCLK1 = fHCLK/2, and fPCLK2 = fHCLK.
• External clock is 4 MHz and PLL is ON except if it is explicitly mentioned.
• The maximum values are obtained for VDD = 3.6 V and a maximum ambient
temperature (TA), and the typical values for TA= 25 °C and VDD = 3.3 V unless
otherwise specified.

Table 20. Typical and maximum current consumption, code with data processing (ART
accelerator disabled) running from SRAM - VDD = 1.7 V
Typ Max(1)
fHCLK
Symbol Parameter Conditions Unit
(MHz) TA=
TA= 25 °C TA=85 °C TA=105 °C
25 °C

100 21.4 23.0 23.6 24.0

External clock, 84 17.2 18.9(5) 19.1 19.2
PLL ON(2), all
64 11.9 12.9 13.2 13.7
peripherals
enabled(3)(4) 50 9.4 10.1 10.4 11.0
20 4.3 4.8 5.0 5.6
HSI, PLL off, all 16 3.0 3.3 3.6 4.3
peripherals
enabled(4) 1 0.5 0.7 1.0 1.7
Supply current
IDD mA
in Run mode 100 12.7 14.0 14.4 14.8
84 10.2 11.6(5) 11.8 12.0
External clock, PLL
on (2))all peripherals 64 7.1 7.9 8.2 8.7
disabled(3)
50 5.6 6.3 6.5 7.1
20 2.5 3.0 3.3 3.9
HSI, PLL off, all 16 1.9 2.1 2.4 3.0
peripherals
disabled(4) 1 0.4 0.5 0.9 1.6

1. Guaranteed by characterization, not tested in production unless otherwise specified

2. Refer to Table 41 and RM0383 for the possible PLL VCO setting
3. When analog peripheral blocks such as ADC, HSE, LSE, HSI, or LSI are ON, an additional power consumption has to be
considered.
4. When the ADC is ON (ADON bit set in the ADC_CR2 register), add an additional power consumption of 1.6 mA for the
analog part.

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5. Tested in production.

Table 21. Typical and maximum current consumption, code with data processing (ART
accelerator disabled) running from SRAM - VDD = 3.6 V
Max(1)
fHCLK
Symbol Parameter Conditions Typ Unit
(MHz)
TA= 25 °C TA=85 °C TA=105 °C

100 21.7 23.3 23.9 24.3

External clock, 84 17.5 19.2(5) 19.4 19.5
PLL ON(2), all
64 12.2 13.2 13.5 14.0
peripherals
enabled(3)(4) 50 9.6 10.4 10.7 11.2
20 4.5 5.0 5.3 5.9
HSI, PLL OFF, all 16 3.0 3.3 3.6 4.3
peripherals
enabled(3) 1 0.5 0.7 1.0 1.7
Supply current
IDD mA
in Run mode 100 13.0 14.6(5) 14.6 14.9
External clock, 84 10.5 11.9(5) 12.1 12.2
PLL OFF(2), (5)
64 7.4 8.4 8.8 8.9
all peripherals
disabled(3) 50 5.9 6.6 6.8 7.3
20 2.8 3.3 3.5 4.2
HSI, PLL OFF, all 16 1.9 2.1 2.4 3.1
peripherals
disabled(3) 1 0.4 0.5 0.9 1.6

1. Guaranteed by characterization, not tested in production unless otherwise specified

2. Refer to Table 41 and RM0383 for the possible PLL VCO setting
3. When analog peripheral blocks such as ADC, HSE, LSE, HSI, or LSI are ON, an additional power consumption has to be
considered.
4. When the ADC is ON (ADON bit set in the ADC_CR2 register), add an additional power consumption of 1.6 mA for the
analog part.
5. Tested in production

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Table 22. Typical and maximum current consumption in run mode, code with data processing
(ART accelerator enabled except prefetch) running from Flash memory- VDD = 1.7 V
Max(1)
fHCLK
Symbol Parameter Conditions Typ Unit
(MHz) TA = TA = TA =
25 °C 85 °C 105 °C

100 20.4 21.8 22.1 22.8

84 16.5 17.6 17.8 18.6
External clock, PLL ON(2),
64 11.4 12.3 12.5 13.1
all peripherals enabled(3)(4)
50 9.0 9.7 10.0 10.6
20 4.6 5.0 5.3 6.0

HSI, PLL OFF(2), all 16 2.9 3.2 3.6 4.3

peripherals enabled(3) 1 0.7 0.8 1.3 1.9
Supply current
IDD mA
in Run mode 100 11.2 12.2 12.4 13.2
84 9.1 9.9 10.1 10.9
External clock, PLL ON(2)
64 6.4 7.0 7.3 7.9
all peripherals disabled(3)
50 5.1 5.6 5.9 6.6
20 2.6 3.0 3.3 4.0

HSI, PLL OFF(2), all 16 1.8 2.0 2.4 3.0

peripherals disabled(3) 1 0.6 0.7 1.2 1.9
1. Guaranteed by characterization, not tested in production unless otherwise specified.
2. Refer to Table 41 and RM0383 for the possible PLL VCO setting
3. Add an additional power consumption of 1.6 mA per ADC for the analog part. In applications, this consumption occurs only
while the ADC is ON (ADON bit is set in the ADC_CR2 register).
4. When the ADC is ON (ADON bit set in the ADC_CR2), add an additional power consumption of 1.6mA per ADC for the
analog part.

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Table 23. Typical and maximum current consumption in run mode, code with data processing
(ART accelerator enabled except prefetch) running from Flash memory - VDD = 3.6 V
Max(1)
fHCLK
Symbol Parameter Conditions Typ Unit
(MHz) TA = TA = TA =
25 °C 85 °C 105 °C

100 20.7 22.2 22.5 23.2

84 16.8 18.0 18.3 19.0
External clock, PLL ON(2),
64 11.8 12.7 12.9 13.6
all peripherals enabled(3)(4)
50 9.3 10.2 10.4 11.1
20 4.8 5.5 5.8 6.5

HSI, PLL OFF(2), all 16 3.0 3.3 3.8 4.5

peripherals enabled(3) 1 0.7 1.0 1.4 2.1
Supply current
IDD mA
in Run mode 100 11.6 12.6 12.9 13.6
84 9.7 10.2(5) 11.1 11.3
(2)
External clock, PLL ON
64 6.7 7.4 7.7 8.3
all peripherals disabled(3)
50 5.4 6.0 6.3 7.0
20 2.9 3.4 3.7 4.4

HSI, PLL OFF(2), all 16 1.9 2.2 2.6 3.3

peripherals disabled(3) 1 0.7 0.9 1.3 2.1
1. Guaranteed by characterization, not tested in production unless otherwise specified.
2. Refer to Table 41 and RM0383 for the possible PLL VCO setting
3. Add an additional power consumption of 1.6 mA per ADC for the analog part. In applications, this consumption occurs only
while the ADC is ON (ADON bit is set in the ADC_CR2 register).
4. When the ADC is ON (ADON bit set in the ADC_CR2), add an additional power consumption of 1.6mA per ADC for the
analog part.
5. Tested in production.

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Table 24. Typical and maximum current consumption in run mode, code with data processing
(ART accelerator disabled) running from Flash memory - VDD = 3.6 V
Max(1)
fHCLK
Symbol Parameter Conditions Typ Unit
(MHz) TA = TA = TA =
25 °C 85 °C 105 °C

100 29.5 31.5 32.3 33.3

84 25.5 27.1 27.9 28.9
External clock, PLL ON(2),
64 18.6 19.8 20.4 21.2
all peripherals enabled(3)(4)
50 15.2 16.4 16.9 17.7
20 7.6 8.4 8.8 9.5

HSI, PLL OFF(2), all 16 4.8 5.2 5.7 6.5

peripherals enabled(3) 1 0.9 1.3 1.6 2.4
Supply current
IDD mA
in Run mode 100 20.4 21.8 22.7 23.8
84 18.4 19.2(5) 20.9 21.1
(2)
External clock, PLL ON
64 13.5 14.5 15.2 15.9
all peripherals disabled(3)
50 11.3 12.2 12.8 13.6
20 5.6 6.4 6.7 7.4

HSI, PLL OFF(2), all 16 3.6 4.1 4.5 5.2

peripherals disabled(3) 1 0.9 1.2 1.6 2.3
1. Guaranteed by characterization, not tested in production unless otherwise specified.
2. Refer to Table 41 and RM0383 for the possible PLL VCO setting
3. Add an additional power consumption of 1.6 mA per ADC for the analog part. In applications, this consumption occurs only
while the ADC is ON (ADON bit is set in the ADC_CR2 register).
4. When the ADC is ON (ADON bit set in the ADC_CR2), add an additional power consumption of 1.6mA per ADC for the
analog part.
5. Tested in production

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Table 25. Typical and maximum current consumption in run mode, code with data processing
(ART accelerator enabled with prefetch) running from Flash memory - VDD = 3.6 V
Max(1)
fHCLK
Symbol Parameter Conditions Typ Unit
(MHz) TA = TA = TA =
25 °C 85 °C 105 °C

100 31.7 33.6 34.5 35.5

84 26.9 28.6 29.4 30.3
External clock, PLL ON(2),
64 19.6 20.9 21.5 22.3
all peripherals enabled(3)(4)
50 15.6 16.7 17.2 18.0
20 7.6 8.4 8.8 9.5

HSI, PLL OFF(2), all 16 5.1 5.6 6.1 6.8

peripherals enabled(3) 1 1.0 1.3 1.7 2.3
Supply current
IDD mA
in Run mode 100 22.5 24.2 24.9 26.0
84 19.5(5) 21.1 21.8 22.8
(2)
External clock, PLL ON
64 14.5 15.7 16.3 17.1
all peripherals disabled(3)
50 11.7 12.7 13.2 14.0
20 5.6 6.4 6.8 7.4

HSI, PLL OFF(2), all 16 4.0 4.5 4.9 5.6

peripherals disabled(3) 1 0.9 1.2 1.6 2.2
1. Guaranteed by characterization, not tested in production unless otherwise specified.
2. Refer to Table 41 and RM0383 for the possible PLL VCO setting
3. Add an additional power consumption of 1.6 mA per ADC for the analog part. In applications, this consumption occurs only
while the ADC is ON (ADON bit is set in the ADC_CR2 register).
4. When the ADC is ON (ADON bit set in the ADC_CR2), add an additional power consumption of 1.6mA per ADC for the
analog part.
5. Tested in production

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Table 26. Typical and maximum current consumption in Sleep mode - VDD = 3.6 V
Max(1)
fHCLK
Symbol Parameter Conditions Typ Unit
(MHz) TA = TA = TA =
25 °C 85 °C 105 °C

100 12.2 13.2 13.4 14.1

84 9.8 10.6 10.9 11.6
External clock, PLL ON(2),
64 6.9 7.4 7.7 8.3
all peripherals enabled(3)(4)
50 5.4 5.9 6.2 6.8
20 2.8 3.2 3.5 4.1

HSI, PLL OFF(2), all 16 1.3 1.7 2.2 2.8

peripherals enabled(3) 1 0.4 0.5 0.9 1.6
Supply current
IDD mA
in Sleep mode 100 3.0 3.6 3.9 4.5
84 2.5 3.0 3.2 3.9
External clock, PLL ON(2)
64 1.9 2.2 2.5 3.0
all peripherals disabled(3)
50 1.6 1.9 2.1 2.7
20 1.1 1.4 1.7 2.3

HSI, PLL OFF(2), all 16 0.4 0.5 0.9 1.6

peripherals disabled(3) 1 0.3 0.4 0.8 1.5
1. Guaranteed by characterization, not tested in production unless otherwise specified.
2. Refer to Table 41 and RM0383 for the possible PLL VCO setting
3. Add an additional power consumption of 1.6 mA per ADC for the analog part. In applications, this consumption occurs only
while the ADC is ON (ADON bit is set in the ADC_CR2 register).
4. When the ADC is ON (ADON bit set in the ADC_CR2), add an additional power consumption of 1.6mA per ADC for the
analog part.

Table 27. Typical and maximum current consumptions in Stop mode - VDD = 1.7 V
Typ(1) Max(1)

Symbol Conditions Parameter TA = Unit

TA = TA = TA =
105 °
25 °C 25 °C 85 °C
C
Flash in Stop mode, all Main regulator usage 112 142(2) 400 710(2)
oscillators OFF, no
independent watchdog Low power regulator usage 42.6 67(2) 300 580
IDD_STOP Flash in Deep power Main regulator usage 75 99(2) 310 580(2) µA
down mode, all oscillators
Low power regulator usage 13.6 37(2) 265 550 (2)
OFF, no independent
watchdog Low power low voltage regulator usage 9 28(2) 230 500(2)
1. Guaranteed by characterization, not tested in production.
2. Tested in production

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Table 28. Typical and maximum current consumption in Stop mode - VDD=3.6 V
Typ Max(1)

Symbol Conditions Parameter TA = Unit

TA = TA = TA =
105 °
25 °C 25 °C 85 °C
C
Flash in Stop mode, all Main regulator usage 113.7 145(2) 410 720(2)
oscillators OFF, no
independent watchdog Low power regulator usage 43.1 68(2) 310 600(2)
IDD_STOP Flash in Deep power Main regulator usage 76.2 105(2) 320 600(2) µA
down mode, all oscillators
Low power regulator usage 14 38(2) 275 560(2)
OFF, no independent
watchdog Low power low voltage regulator usage 10 30(2) 235 510(2)
1. Guaranteed by characterization, not tested in production.
2. Tested in production.

Table 29. Typical and maximum current consumption in Standby mode - VDD= 1.7 V
Typ(1) Max(2)
Symbol Parameter Conditions Unit
TA = TA = TA = TA =
25 °C 25 °C 85 °C 105 °C

Supply current in Low-speed oscillator (LSE) and RTC ON 2.6 4 12 24

IDD_STBY µA
Standby mode RTC and LSE OFF 1.8 3(3) 11 25(3)
1. When the PDR is OFF (internal reset is OFF), the typical current consumption is reduced by 1.2 µA.
2. Guaranteed by characterization, not tested in production unless otherwise specified.
3. Tested in production.

Table 30. Typical and maximum current consumption in Standby mode - VDD= 3.6 V
Typ(1) Max(2)
Symbol Parameter Conditions Unit
TA = TA = TA = TA =
25 °C 25 °C 85 °C 105 °C

Supply current in Low-speed oscillator (LSE) and RTC ON 3 5 14 28

IDD_STBY µA
Standby mode RTC and LSE OFF 2.1 4(3)
13.5 30(3)
1. When the PDR is OFF (internal reset is OFF), the typical current consumption is reduced by 1.2 µA.
2. Guaranteed by characterization, not tested in production unless otherwise specified.
3. Tested in production.

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Table 31. Typical and maximum current consumptions in VBAT mode

Typ Max(2)

TA = TA =
TA = 25 °C
Symbol Parameter Conditions(1) 85 °C 105 °C Unit

VBAT = VBAT= VBAT =

VBAT = 3.6 V
1.7 V 2.4 V 3.3 V

Low-speed oscillator (LSE in low-drive

0.7 0.8 1.0 1.4 2.8
mode) and RTC ON
Backup
IDD_VBAT domain supply Low-speed oscillator (LSE in high-drive µA
1.5 1.6 1.9 2.8 4.3
current mode) and RTC ON
RTC and LSE OFF 0.1 0.1 0.1 2 4
1. Crystal used: Abracon ABS07-120-32.768 kHz-T with a CL of 6 pF for typical values.
2. Guaranteed by characterization, not tested in production.

Figure 20. Typical VBAT current consumption (LSE in low-drive mode and RTC ON)


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I/O system current consumption

The current consumption of the I/O system has two components: static and dynamic.
I/O static current consumption
All the I/Os used as inputs with pull-up generate current consumption when the pin is
externally held low. The value of this current consumption can be simply computed by using
the pull-up/pull-down resistors values given in Table 53: I/O static characteristics.
For the output pins, any external pull-down or external load must also be considered to
estimate the current consumption.

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Additional I/O current consumption is due to I/Os configured as inputs if an intermediate

voltage level is externally applied. This current consumption is caused by the input Schmitt
trigger circuits used to discriminate the input value. Unless this specific configuration is
required by the application, this supply current consumption can be avoided by configuring
these I/Os in analog mode. This is notably the case of ADC input pins which should be
configured as analog inputs.
Caution: Any floating input pin can also settle to an intermediate voltage level or switch inadvertently,
as a result of external electromagnetic noise. To avoid current consumption related to
floating pins, they must either be configured in analog mode, or forced internally to a definite
digital value. This can be done either by using pull-up/down resistors or by configuring the
pins in output mode.
I/O dynamic current consumption
In addition to the internal peripheral current consumption (see Table 33: Peripheral current
consumption), the I/Os used by an application also contribute to the current consumption.
When an I/O pin switches, it uses the current from the MCU supply voltage to supply the I/O
pin circuitry and to charge/discharge the capacitive load (internal or external) connected to
the pin:

I SW = V DD × f SW × C

where
ISW is the current sunk by a switching I/O to charge/discharge the capacitive load
VDD is the MCU supply voltage
fSW is the I/O switching frequency
C is the total capacitance seen by the I/O pin: C = CINT+ CEXT
The test pin is configured in push-pull output mode and is toggled by software at a fixed
frequency.

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Table 32. Switching output I/O current consumption

I/O toggling
Symbol Parameter Conditions(1) Typ Unit
frequency (fSW)

2 MHz 0.05
8 MHz 0.15
25 MHz 0.45
VDD = 3.3 V
50 MHz 0.85
C = CINT
60 MHz 1.00
84 MHz 1.40
90 MHz 1.67
2 MHz 0.10
8 MHz 0.35

VDD = 3.3 V 25 MHz 1.05

CEXT = 0 pF 50 MHz 2.20
C = CINT + CEXT + CS 60 MHz 2.40
84 MHz 3.55
90 MHz 4.23

I/O switching 2 MHz 0.20

IDDIO mA
current 8 MHz 0.65

VDD = 3.3 V 25 MHz 1.85

CEXT =10 pF 50 MHz 2.45
C = CINT + CEXT + CS 60 MHz 4.70
84 MHz 8.80
90 MHz 10.47
2 MHz 0.25

VDD = 3.3 V 8 MHz 1.00

CEXT = 22 pF 25 MHz 3.45
C = CINT + CEXT + CS 50 MHz 7.15
60 MHz 11.55
2 MHz 0.32
VDD = 3.3 V
8 MHz 1.27
CEXT = 33 pF
25 MHz 3.88
C = CINT + CEXT + CS
50 MHz 12.34
1. CS is the PCB board capacitance including the pad pin. CS = 7 pF (estimated value).

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On-chip peripheral current consumption

The MCU is placed under the following conditions:
• At startup, all I/O pins are in analog input configuration.
• All peripherals are disabled unless otherwise mentioned.
• The ART accelerator is ON.
• Voltage Scale 2 mode selected, internal digital voltage V12 = 1.26 V.
• HCLK is the system clock at 84 MHz. fPCLK1 = fHCLK/2, and fPCLK2 = fHCLK.
The given value is calculated by measuring the difference of current consumption
– with all peripherals clocked off
– with only one peripheral clocked on
• Ambient operating temperature is 25 °C and VDD=3.3 V.

Table 33. Peripheral current consumption

Peripheral IDD (Typ) Unit

GPIOA 1.55
GPIOB 1.55
GPIOC 1.55
GPIOD 1.55
GPIOE 1.55
GPIOH 1.55
CRC 0.36
AHB1 (1)
DMA1 14.96 µA/MHz
(up to 100 MHz)
DMA1(2) 1.54N+2.66
(1)
DMA2 14.96
DMA2(2) 1.54N+2.66
TIM2 11.19
TIM3 8.57
TIM4 8.33
TIM5 11.19
PWR 0.71

APB1 USART2 3.33

µA/MHz
(up to 50 MHz) I2C1/2/3 3.10
SPI2(3) 2.62
(3)
SPI3 2.86
I2S2 1.90
I2S3 1.67
WWDG 0.71

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Table 33. Peripheral current consumption (continued)

Peripheral IDD (Typ) Unit

TIM1 5.71
TIM9 2.86
TIM10 1.79
TIM11 2.02
OTG_FS 23.93

APB2 ADC1(4) 2.98

µA/MHz
(up to 100 MHz) SPI1 1.19
USART1 3.10
USART6 2.86
SDIO 5.95
SPI4 1.31
SYSCFG 0.71
1. Valid if all the DMA streams are activated (please refer to the reference manual RM0383).
2. For N DMA streams activated (up to 8 activated streams, refer to the reference manual RM0383).
3. I2SMOD bit set in SPI_I2SCFGR register, and then the I2SE bit set to enable I2S peripheral.
4. When the ADC is ON (ADON bit set in the ADC_CR2 register), add an additional power consumption of 1.6
mA for the analog part.

6.3.7 Wakeup time from low-power modes

The wakeup times given in Table 34 are measured starting from the wakeup event trigger up
to the first instruction executed by the CPU:
• For Stop or Sleep modes: the wakeup event is WFE.
• WKUP (PA0) pin is used to wakeup from Standby, Stop and Sleep modes.

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Figure 21. Low-power mode wakeup

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All timings are derived from tests performed under ambient temperature and VDD=3.3 V.

Table 34. Low-power mode wakeup timings(1)

Symbol Parameter Min(1) Typ(1) Max(1) Unit

CPU
tWUSLEEP(2) Wakeup from Sleep mode - 4 6 clock
cycle
Wakeup from Stop mode, usage of main regulator - 13.5 14.5
Wakeup from Stop mode, usage of main regulator, Flash
- 105 111
memory in Deep power down mode
tWUSTOP(2) µs
Wakeup from Stop mode, regulator in low power mode - 21 33
Wakeup from Stop mode, regulator in low power mode,
- 113 130
Flash memory in Deep power down mode

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Table 34. Low-power mode wakeup timings(1) (continued)

Symbol Parameter Min(1) Typ(1) Max(1) Unit

tWUSTDBY(2)(3) Wakeup from Standby mode - 314 407 µs

Wakeup of Flash from Flash_Stop mode - - 8

tWUFLASH µs
Wakeup of Flash from Flash Deep power down mode - - 100
1. Guaranteed by characterization, not tested in production.
2. The wakeup times are measured from the wakeup event to the point in which the application code reads the first instruction.
3. tWUSTDBY maximum value is given at –40 °C.

6.3.8 External clock source characteristics

High-speed external user clock generated from an external source
In bypass mode the HSE oscillator is switched off and the input pin is a standard I/O. The
external clock signal has to respect the Table 53. However, the recommended clock input
waveform is shown in Figure 22.
The characteristics given in Table 35 result from tests performed using an high-speed
external clock source, and under ambient temperature and supply voltage conditions
summarized in Table 14.

Table 35. High-speed external user clock characteristics

Symbol Parameter Conditions Min Typ Max Unit

External user clock source

fHSE_ext 1 - 50 MHz
frequency(1)
VHSEH OSC_IN input pin high level voltage 0.7VDD - VDD
V
VHSEL OSC_IN input pin low level voltage VSS - 0.3VDD
tw(HSE)
OSC_IN high or low time(1) 5 - -
tw(HSE)
ns
tr(HSE)
OSC_IN rise or fall time(1) - - 10
tf(HSE)
Cin(HSE) OSC_IN input capacitance(1) - 5 - pF
DuCy(HSE) Duty cycle 45 - 55 %
IL OSC_IN Input leakage current VSS ≤ VIN ≤ VDD - - ±1 µA
1. Guaranteed by design, not tested in production.

Low-speed external user clock generated from an external source

In bypass mode the LSE oscillator is switched off and the input pin is a standard I/O. The
external clock signal has to respect the Table 53. However, the recommended clock input
waveform is shown in Figure 23.
The characteristics given in Table 36 result from tests performed using an low-speed
external clock source, and under ambient temperature and supply voltage conditions
summarized in Table 14.

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Table 36. Low-speed external user clock characteristics

Symbol Parameter Conditions Min Typ Max Unit

User External clock source

fLSE_ext - 32.768 1000 kHz
frequency(1)
OSC32_IN input pin high level
VLSEH 0.7VDD - VDD
voltage V
VLSEL OSC32_IN input pin low level voltage VSS - 0.3VDD
tw(LSE)
OSC32_IN high or low time(1) 450 - -
tf(LSE)
ns
tr(LSE)
OSC32_IN rise or fall time(1) - - 50
tf(LSE)
Cin(LSE) OSC32_IN input capacitance(1) - 5 - pF
DuCy(LSE) Duty cycle 30 - 70 %
IL OSC32_IN Input leakage current VSS ≤ VIN ≤ VDD - - ±1 µA
1. Guaranteed by design, not tested in production.

Figure 22. High-speed external clock source AC timing diagram

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Figure 23. Low-speed external clock source AC timing diagram

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High-speed external clock generated from a crystal/ceramic resonator

The high-speed external (HSE) clock can be supplied with a 4 to 26 MHz crystal/ceramic
resonator oscillator. All the information given in this paragraph are based on
characterization results obtained with typical external components specified in Table 37. In
the application, the resonator and the load capacitors have to be placed as close as
possible to the oscillator pins in order to minimize output distortion and startup stabilization
time. Refer to the crystal resonator manufacturer for more details on the resonator
characteristics (frequency, package, accuracy).

Table 37. HSE 4-26 MHz oscillator characteristics(1)

Symbol Parameter Conditions Min Typ Max Unit

fOSC_IN Oscillator frequency 4 - 26 MHz

RF Feedback resistor - 200 - kΩ
VDD=3.3 V,
ESR= 30 Ω, - 450 -
CL=5 pF @25 MHz
IDD HSE current consumption µA
VDD=3.3 V,
ESR= 30 Ω, - 530 -
CL=10 pF @25 MHz
Gm_crit_max Maximum critical crystal gm Startup - - 1 mA/V
(2)
tSU(HSE) Startup time VDD is stabilized - 2 - ms
1. Guaranteed by design, not tested in production.
2. tSU(HSE) is the startup time measured from the moment it is enabled (by software) to a stabilized 8 MHz
oscillation is reached. This value is measured for a standard crystal resonator and it can vary significantly
with the crystal manufacturer

For CL1 and CL2, it is recommended to use high-quality external ceramic capacitors in the
5 pF to 25 pF range (Typ.), designed for high-frequency applications, and selected to match
the requirements of the crystal or resonator (see Figure 24). CL1 and CL2 are usually the
same size. The crystal manufacturer typically specifies a load capacitance which is the

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series combination of CL1 and CL2. PCB and MCU pin capacitance must be included (10 pF
can be used as a rough estimate of the combined pin and board capacitance) when sizing
CL1 and CL2.
Note: For information on selecting the crystal, refer to the application note AN2867 “Oscillator
design guide for ST microcontrollers” available from the ST website www.st.com.

Figure 24. Typical application with an 8 MHz crystal

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Low-speed external clock generated from a crystal/ceramic resonator

The low-speed external (LSE) clock can be supplied with a 32.768 kHz crystal/ceramic
resonator oscillator. All the information given in this paragraph are based on
characterization results obtained with typical external components specified in Table 38. In
the application, the resonator and the load capacitors have to be placed as close as
possible to the oscillator pins in order to minimize output distortion and startup stabilization
time. Refer to the crystal resonator manufacturer for more details on the resonator
characteristics (frequency, package, accuracy).
The LSE high-power mode allows to cover a wider range of possible crystals but with a cost
of higher power consumption.

Table 38. LSE oscillator characteristics (fLSE = 32.768 kHz) (1)

Symbol Parameter Conditions Min Typ Max Unit

RF Feedback resistor - - 18.4 - MΩ

Low-power mode
- - 1
IDD LSE current consumption (default) µA
High-drive mode - - 3
Startup, low-power
- - 0.56
mode
Gm_crit_max Maximum critical crystal gm µA/V
Startup, high-drive
- - 1.50
mode
tSU(LSE)(2) startup time VDD is stabilized - 2 - s
1. Guaranteed by design, not tested in production.
2. tSU(LSE) is the startup time measured from the moment it is enabled (by software) to a stabilized
32.768 kHz oscillation is reached. This value is guaranteed by characterization and not tested in
production. It is measured for a standard crystal resonator and it can vary significantly with the crystal
manufacturer.

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Note: For information on selecting the crystal, refer to the application note AN2867 “Oscillator
design guide for ST microcontrollers” available from the ST website www.st.com.
For information about the LSE high-power mode, refer to the reference manual RM0383.

Figure 25. Typical application with a 32.768 kHz crystal

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6.3.9 Internal clock source characteristics

The parameters given in Table 39 and Table 40 are derived from tests performed under
ambient temperature and VDD supply voltage conditions summarized in Table 14.

High-speed internal (HSI) RC oscillator

Table 39. HSI oscillator characteristics (1)

L

Symbol Parameter Conditions Min Typ Max Unit

fHSI Frequency - 16 - MHz

User-trimmed with the RCC_CR
- - 1 %
register(2)
Accuracy of the HSI TA = –40 to 105 °C(3) –8 - 4.5 %
ACCHSI
oscillator Factory-
TA = –10 to 85 °C(3) –4 - 4 %
calibrated
TA = 25 °C –1 - 1 %
HSI oscillator
tsu(HSI)(2) - 2.2 4 µs
startup time
HSI oscillator
IDD(HSI)(2) - 60 80 µA
power consumption
1. VDD = 3.3 V, TA = –40 to 105 °C unless otherwise specified.
2. Guaranteed by design, not tested in production
3. Guaranteed by characterization, not tested in production

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Electrical characteristics STM32F411xC STM32F411xE

Figure 26. ACCHSI versus temperature






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-36

1. Guaranteed by characterization, not tested in production.

Low-speed internal (LSI) RC oscillator

Table 40. LSI oscillator characteristics (1)

Symbol Parameter Min Typ Max Unit

fLSI(2) Frequency 17 32 47 kHz

tsu(LSI) (3) LSI oscillator startup time - 15 40 µs
IDD(LSI)(3) LSI oscillator power consumption - 0.4 0.6 µA
1. VDD = 3 V, TA = –40 to 105 °C unless otherwise specified.
2. Guaranteed by characterization, not tested in production.
3. Guaranteed by design, not tested in production.

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Figure 27. ACCLSI versus temperature


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6.3.10 PLL characteristics

The parameters given in Table 41 and Table 42 are derived from tests performed under
temperature and VDD supply voltage conditions summarized in Table 14.

Table 41. Main PLL characteristics

Symbol Parameter Conditions Min Typ Max Unit

fPLL_IN PLL input clock(1) 0.95(2) 1 2.10 MHz

fPLL_OUT PLL multiplier output clock 24 - 100 MHz
48 MHz PLL multiplier output
fPLL48_OUT - 48 75 MHz
clock
fVCO_OUT PLL VCO output 100 - 432 MHz
VCO freq = 100 MHz 75 - 200
tLOCK PLL lock time µs
VCO freq = 432 MHz 100 - 300
RMS - 25 -

Cycle-to-cycle jitter peak

to - ±150 -
System clock peak
Jitter(3) ps
100 MHz RMS - 15 -

Period Jitter peak

to - ±200 -
peak

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Table 41. Main PLL characteristics (continued)

Symbol Parameter Conditions Min Typ Max Unit

VCO freq = 100 MHz 0.15 0.40

IDD(PLL)(4) PLL power consumption on VDD -
VCO freq = 432 MHz 0.45 0.75
mA
PLL power consumption on VCO freq = 100 MHz 0.30 0.40
IDDA(PLL)(4) -
VDDA VCO freq = 432 MHz 0.55 0.85
1. Take care of using the appropriate division factor M to obtain the specified PLL input clock values. The M factor is shared
between PLL and PLLI2S.
2. Guaranteed by design, not tested in production.
3. The use of two PLLs in parallel could degraded the Jitter up to +30%.
4. Guaranteed by characterization, not tested in production.

Table 42. PLLI2S (audio PLL) characteristics

Symbol Parameter Conditions Min Typ Max Unit

fPLLI2S_IN PLLI2S input clock(1) - 0.95(2) 1 2.10

fPLLI2S_OUT PLLI2S multiplier output clock - - - 216 MHz
fVCO_OUT PLLI2S VCO output - 100 - 432
VCO freq = 100 MHz 75 - 200
tLOCK PLLI2S lock time µs
VCO freq = 432 MHz 100 - 300

Cycle to cycle at RMS - 90 -

12.288 MHz on peak
48 kHz period, to - ±280 -
N=432, R=5 peak
Master I2S clock jitter
(3) Average frequency of
Jitter
12.288 MHz ps
- 90 -
N = 432, R = 5
on 1000 samples
Cycle to cycle at 48 KHz
WS I2S clock jitter - 400 -
on 1000 samples
PLLI2S power consumption on VCO freq = 100 MHz 0.15 0.40
IDD(PLLI2S)(4) -
VDD VCO freq = 432 MHz 0.45 0.75
mA
PLLI2S power consumption on VCO freq = 100 MHz 0.30 0.40
IDDA(PLLI2S)(4) -
VDDA VCO freq = 432 MHz 0.55 0.85
1. Take care of using the appropriate division factor M to have the specified PLL input clock values.
2. Guaranteed by design, not tested in production.
3. Value given with main PLL running.
4. Guaranteed by characterization, not tested in production.

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6.3.11 PLL spread spectrum clock generation (SSCG) characteristics

The spread spectrum clock generation (SSCG) feature allows to reduce electromagnetic
interferences (see Table 49: EMI characteristics for LQFP100). It is available only on the
main PLL.

Table 43. SSCG parameter constraints

Symbol Parameter Min Typ Max(1) Unit

fMod Modulation frequency - - 10 kHz

md Peak modulation depth 0.25 - 2 %
MODEPER * INCSTEP (Modulation period) * (Increment Step) - - 215 -1 -
1. Guaranteed by design, not tested in production.

Equation 1
The frequency modulation period (MODEPER) is given by the equation below:
MODEPER = round [ f PLL_IN ⁄ ( 4 × fMod ) ]

fPLL_IN and fMod must be expressed in Hz.

As an example:
If fPLL_IN = 1 MHz, and fMOD = 1 kHz, the modulation depth (MODEPER) is given by
equation 1:
6 3
MODEPER = round [ 10 ⁄ ( 4 × 10 ) ] = 250

Equation 2
Equation 2 allows to calculate the increment step (INCSTEP):
15
INCSTEP = round [ ( ( 2 – 1 ) × md × PLLN ) ⁄ ( 100 × 5 × MODEPER ) ]

fVCO_OUT must be expressed in MHz.

With a modulation depth (md) = ±2 % (4 % peak to peak), and PLLN = 240 (in MHz):
15
INCSTEP = round [ ( ( 2 – 1 ) × 2 × 240 ) ⁄ ( 100 × 5 × 250 ) ] = 126md(quantitazed)%

An amplitude quantization error may be generated because the linear modulation profile is
obtained by taking the quantized values (rounded to the nearest integer) of MODPER and
INCSTEP. As a result, the achieved modulation depth is quantized. The percentage
quantized modulation depth is given by the following formula:
15
md quantized % = ( MODEPER × INCSTEP × 100 × 5 ) ⁄ ( ( 2 – 1 ) × PLLN )

As a result:
15
md quantized % = ( 250 × 126 × 100 × 5 ) ⁄ ( ( 2 – 1 ) × 240 ) = 2,002%(peak)

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Figure 28 and Figure 29 show the main PLL output clock waveforms in center spread and
down spread modes, where:
F0 is fPLL_OUT nominal.
Tmode is the modulation period.
md is the modulation depth.

Figure 28. PLL output clock waveforms in center spread mode

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Figure 29. PLL output clock waveforms in down spread mode

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4IME
TMODE XTMODE
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6.3.12 Memory characteristics

Flash memory
The characteristics are given at TA = –40 to 105 °C unless otherwise specified.
The devices are shipped to customers with the Flash memory erased.

Table 44. Flash memory characteristics

Symbol Parameter Conditions Min Typ Max Unit

Write / Erase 8-bit mode, VDD = 1.7 V - 5 -

IDD Supply current Write / Erase 16-bit mode, VDD = 2.1 V - 8 - mA
Write / Erase 32-bit mode, VDD = 3.3 V - 12 -

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Table 45. Flash memory programming

Symbol Parameter Conditions Min(1) Typ Max(1) Unit

Program/erase parallelism
tprog Word programming time - 16 100(2) µs
(PSIZE) = x 8/16/32
Program/erase parallelism
- 400 800
(PSIZE) = x 8
Program/erase parallelism
tERASE16KB Sector (16 KB) erase time - 300 600 ms
(PSIZE) = x 16
Program/erase parallelism
- 250 500
(PSIZE) = x 32
Program/erase parallelism
- 1200 2400
(PSIZE) = x 8
Program/erase parallelism
tERASE64KB Sector (64 KB) erase time - 700 1400 ms
(PSIZE) = x 16
Program/erase parallelism
- 550 1100
(PSIZE) = x 32
Program/erase parallelism
- 2 4
(PSIZE) = x 8
Program/erase parallelism
tERASE128KB Sector (128 KB) erase time - 1.3 2.6 s
(PSIZE) = x 16
Program/erase parallelism
- 1 2
(PSIZE) = x 32
Program/erase parallelism
- 8 16
(PSIZE) = x 8
Program/erase parallelism
tME Mass erase time - 5.5 11 s
(PSIZE) = x 16
Program/erase parallelism
- 4 8
(PSIZE) = x 32
32-bit program operation 2.7 - 3.6 V
Vprog Programming voltage 16-bit program operation 2.1 - 3.6 V
8-bit program operation 1.7 - 3.6 V
1. Guaranteed by characterization, not tested in production.
2. The maximum programming time is measured after 100K erase operations.

Table 46. Flash memory programming with VPP voltage

Symbol Parameter Conditions Min(1) Typ Max(1) Unit

tprog Double word programming - 16 100(2) µs

tERASE16KB Sector (16 KB) erase time TA = 0 to +40 °C - 230 -
tERASE64KB Sector (64 KB) erase time VDD = 3.3 V - 490 - ms
tERASE128KB Sector (128 KB) erase time VPP = 8.5 V - 875 -
tME Mass erase time - 3.50 - s
Vprog Programming voltage 2.7 - 3.6 V

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Table 46. Flash memory programming with VPP voltage (continued)

Symbol Parameter Conditions Min(1) Typ Max(1) Unit

VPP VPP voltage range 7 - 9 V

Minimum current sunk on
IPP 10 - - mA
the VPP pin
Cumulative time during
tVPP(3) - - 1 hour
which VPP is applied
1. Guaranteed by design, not tested in production.
2. The maximum programming time is measured after 100K erase operations.
3. VPP should only be connected during programming/erasing.

Table 47. Flash memory endurance and data retention

Value
Symbol Parameter Conditions Unit
Min(1)

TA = –40 to +85 °C (6 suffix versions)

NEND Endurance 10 kcycles
TA = –40 to +105 °C (7 suffix versions)
1 kcycle(2) at TA = 85 °C 30
tRET Data retention 1 kcycle(2) at TA = 105 °C 10 Years
(2)
10 kcycle at TA = 55 °C 20
1. Guaranteed by characterization, not tested in production.
2. Cycling performed over the whole temperature range.

6.3.13 EMC characteristics

Susceptibility tests are performed on a sample basis during device characterization.

Functional EMS (electromagnetic susceptibility)

While a simple application is executed on the device (toggling 2 LEDs through I/O ports).
the device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:
• Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
• FTB: A burst of fast transient voltage (positive and negative) is applied to VDD and VSS
through a 100 pF capacitor, until a functional disturbance occurs. This test is compliant
with the IEC 61000-4-4 standard.
A device reset allows normal operations to be resumed.
The test results are given in Table 49. They are based on the EMS levels and classes
defined in application note AN1709.

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Table 48. EMS characteristics for LQFP100 package

Level/
Symbol Parameter Conditions
Class

VDD = 3.3 V, LQFP100, WLCSP49,

Voltage limits to be applied on any I/O pin
VFESD TA = +25 °C, fHCLK = 100 MHz, 2B
to induce a functional disturbance
conforms to IEC 61000-4-2
Fast transient voltage burst limits to be VDD = 3.3 V, LQFP100, WLCSP49,
VEFTB applied through 100 pF on VDD and VSS TA = +25 °C, fHCLK = 100 MHz, 4A
pins to induce a functional disturbance conforms to IEC 61000-4-4

When the application is exposed to a noisy environment, it is recommended to avoid pin

exposition to disturbances. The pins showing a middle range robustness are: PA0, PA1,
PA2, on LQFP100 packages and PDR_ON on WLCSP49.
As a consequence, it is recommended to add a serial resistor (1 kΩ maximum) located as
close as possible to the MCU to the pins exposed to noise (connected to tracks longer than
50 mm on PCB).

Designing hardened software to avoid noise problems

EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
Software recommendations
The software flowchart must include the management of runaway conditions such as:
• Corrupted program counter
• Unexpected reset
• Critical Data corruption (control registers...)
Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1
second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015).

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Electromagnetic Interference (EMI)

The electromagnetic field emitted by the device are monitored while a simple application,
executing EEMBC code, is running. This emission test is compliant with SAE IEC61967-2
standard which specifies the test board and the pin loading.

Table 49. EMI characteristics for LQFP100

Max vs.
Monitored [fHSE/fCPU]
Symbol Parameter Conditions Unit
frequency band
8/84 MHz

0.1 to 30 MHz 19

VDD = 3.6 V, TA = 25 °C, conforming to 30 to 130 MHz 17 dBµV

SEMI Peak level
IEC61967-2 130 MHz to 1 GHz 12
SAE EMI Level 3.5 -

6.3.14 Absolute maximum ratings (electrical sensitivity)

Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.

Electrostatic discharge (ESD)

Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the JESD22-A114/C101 standard.

Table 50. ESD absolute maximum ratings

Maximum
Symbol Ratings Conditions Class Unit
value(1)

Electrostatic discharge
VESD(HBM) voltage (human body TA = +25 °C conforming to JESD22-A114 2 2000
model)
UFBGA100,
4 500 V
UFQFN48
Electrostatic discharge
TA = +25 °C conforming to
VESD(CDM) voltage (charge device WLCSP49 3 400
ANSI/ESD STM5.3.1
model)
LQPF64,
3 250
LQFP100
1. Guaranteed by characterization, not tested in production.

Static latchup
Two complementary static tests are required on six parts to assess the latchup
performance:
• A supply overvoltage is applied to each power supply pin
• A current injection is applied to each input, output and configurable I/O pin

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These tests are compliant with EIA/JESD 78A IC latchup standard.

Table 51. Electrical sensitivities

Symbol Parameter Conditions Class

LU Static latch-up class TA = +105 °C conforming to JESD78A II level A

6.3.15 I/O current injection characteristics

As a general rule, current injection to the I/O pins, due to external voltage below VSS or
above VDD (for standard, 3 V-capable I/O pins) should be avoided during normal product
operation. However, in order to give an indication of the robustness of the microcontroller in
cases when abnormal injection accidentally happens, susceptibility tests are performed on a
sample basis during device characterization.

Functional susceptibility to I/O current injection

While a simple application is executed on the device, the device is stressed by injecting
current into the I/O pins programmed in floating input mode. While current is injected into
the I/O pin, one at a time, the device is checked for functional failures.
The failure is indicated by an out of range parameter: ADC error above a certain limit (>5
LSB TUE), out of conventional limits of induced leakage current on adjacent pins
(out of –5 µA/+0 µA range), or other functional failure (for example reset, oscillator
frequency deviation).
Negative induced leakage current is caused by negative injection and positive induced
leakage current by positive injection.
The test results are given in Table 52.

Table 52. I/O current injection susceptibility(1)

Functional susceptibility
Symbol Description Unit
Negative Positive
injection injection

Injected current on BOOT0 pin –0 NA

Injected current on NRST pin –0 NA
Injected current on PB3, PB4, PB5, PB6,
PB7, PB8, PB9, PC13, PC14, PC15, PH1,
IINJ PDR_ON, PC0, PC1,PC2, PC3, PD1, –0 NA mA
PD5, PD6, PD7, PE0, PE2, PE3, PE4,
PE5, PE6
Injected current on any other FT pin –5 NA
Injected current on any other pins –5 +5
1. NA = not applicable.

Note: It is recommended to add a Schottky diode (pin to ground) to analog pins which may
potentially inject negative currents.

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6.3.16 I/O port characteristics

General input/output characteristics
Unless otherwise specified, the parameters given in Table 53 are derived from tests
performed under the conditions summarized in Table 14. All I/Os are CMOS and TTL
compliant.

Table 53. I/O static characteristics

Symbol Parameter Conditions Min Typ Max Unit

FT, TC and NRST I/O input low

1.7 V≤ VDD≤ 3.6 V - - 0.3VDD(1)
level voltage
1.75 V≤ VDD ≤ 3.6 V,
VIL - - V
BOOT0 I/O input low level -40 °C≤ TA ≤ 105 °C
0.1VDD+0.1(2)
voltage 1.7 V≤ VDD ≤ 3.6 V,
- -
0 °C≤ TA ≤ 105 °C
FT, TC and NRST I/O input high
1.7 V≤ VDD≤ 3.6 V 0.7VDD(1) - -
level voltage(5)
1.75 V≤ VDD ≤ 3.6 V,
VIH V
BOOT0 I/O input high level -40 °C≤ TA ≤ 105 °C
0.17VDD+0.7(2) - -
voltage 1.7 V≤ VDD ≤ 3.6 V,
0 °C≤ TA ≤ 105 °C
FT, TC and NRST I/O input
1.7 V≤ VDD≤ 3.6 V 10% VDD(2)(3) - -
hysteresis
1.75 V≤ VDD ≤ 3.6 V,
VHYS V
-40 °C≤ TA ≤ 105 °C
BOOT0 I/O input hysteresis 0.1 - -
1.7 V≤ VDD ≤ 3.6 V,
0 °C≤ TA ≤ 105 °C
I/O input leakage current (4) VSS ≤ VIN ≤ VDD - - ±1
Ilkg I/O FT/TC input leakage current µA
(5) VIN = 5 V - - 3

All pins
except for
Weak pull-up VIN = VSS 30 40 50
PA10
RPU equivalent (OTG_FS_ID)
resistor(6)
PA10
- 7 10 14
(OTG_FS_ID)
kΩ
All pins
except for
Weak pull-down VIN = VDD 30 40 50
PA10
RPD equivalent (OTG_FS_ID)
resistor(7)
PA10
- 7 10 14
(OTG_FS_ID)
CIO(8) I/O pin capacitance - - 5 - pF
1. Guaranteed by test in production.
2. Guaranteed by design, not tested in production.

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3. With a minimum of 200 mV.

4. Leakage could be higher than the maximum value, if negative current is injected on adjacent pins, Refer to Table 52: I/O
current injection susceptibility
5. To sustain a voltage higher than VDD +0.3 V, the internal pull-up/pull-down resistors must be disabled. Leakage could be
higher than the maximum value, if negative current is injected on adjacent pins.Refer to Table 52: I/O current injection
susceptibility
6. Pull-up resistors are designed with a true resistance in series with a switchable PMOS. This PMOS contribution to the series
resistance is minimum (~10% order).
7. Pull-down resistors are designed with a true resistance in series with a switchable NMOS. This NMOS contribution to the
series resistance is minimum (~10% order).
8. Hysteresis voltage between Schmitt trigger switching levels. Guaranteed by characterization, not tested in production.

All I/Os are CMOS and TTL compliant (no software configuration required). Their
characteristics cover more than the strict CMOS-technology or TTL parameters. The
coverage of these requirements for FT and TC I/Os is shown in Figure 30.

Figure 30. FT/TC I/O input characteristics

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Output driving current

The GPIOs (general purpose input/outputs) can sink or source up to ±8 mA, and sink or
source up to ±20 mA (with a relaxed VOL/VOH) except PC13, PC14 and PC15 which can
sink or source up to ±3mA. When using the PC13 to PC15 GPIOs in output mode, the
speed should not exceed 2 MHz with a maximum load of 30 pF.

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In the user application, the number of I/O pins which can drive current must be limited to
respect the absolute maximum rating specified in Section 6.2. In particular:
• The sum of the currents sourced by all the I/Os on VDD, plus the maximum Run
consumption of the MCU sourced on VDD, cannot exceed the absolute maximum rating
ΣIVDD (see Table 12).
• The sum of the currents sunk by all the I/Os on VSS plus the maximum Run
consumption of the MCU sunk on VSS cannot exceed the absolute maximum rating
ΣIVSS (see Table 12).

Output voltage levels

Unless otherwise specified, the parameters given in Table 54 are derived from tests
performed under ambient temperature and VDD supply voltage conditions summarized in
Table 14. All I/Os are CMOS and TTL compliant.

Table 54. Output voltage characteristics

Symbol Parameter Conditions Min Max Unit
(1) (2)
VOL Output low level voltage for an I/O pin CMOS port - 0.4
IIO = +8 mA V
VOH(3) Output high level voltage for an I/O pin VDD–0.4 -
2.7 V ≤ VDD ≤ 3.6 V
VOL (1) Output low level voltage for an I/O pin TTL port(2) - 0.4
IIO =+8 mA V
VOH (3) Output high level voltage for an I/O pin
2.7 V ≤ VDD ≤ 3.6 V
2.4 -

VOL(1) Output low level voltage for an I/O pin IIO = +20 mA - 1.3(4)
V
VOH(3) Output high level voltage for an I/O pin 2.7 V ≤ VDD ≤ 3.6 V VDD–1.3(4) -
VOL(1) Output low level voltage for an I/O pin IIO = +6 mA - 0.4(4)
V
VOH(3) Output high level voltage for an I/O pin 1.8 V ≤ VDD ≤ 3.6 V VDD–0.4(4) -
VOL(1) Output low level voltage for an I/O pin IIO = +4 mA - 0.4(5)
V
VOH(3) Output high level voltage for an I/O pin 1.7 V ≤ VDD ≤ 3.6 V VDD–0.4(5) -
1. The IIO current sunk by the device must always respect the absolute maximum rating specified in Table 12.
and the sum of IIO (I/O ports and control pins) must not exceed IVSS.
2. TTL and CMOS outputs are compatible with JEDEC standards JESD36 and JESD52.
3. The IIO current sourced by the device must always respect the absolute maximum rating specified in
Table 12 and the sum of IIO (I/O ports and control pins) must not exceed IVDD.
4. Guaranteed by characterization results, not tested in production.
5. Guaranteed by design, not tested in production.

Input/output AC characteristics
The definition and values of input/output AC characteristics are given in Figure 31 and
Table 55, respectively.
Unless otherwise specified, the parameters given in Table 55 are derived from tests
performed under the ambient temperature and VDD supply voltage conditions summarized
in Table 14.

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Table 55. I/O AC characteristics(1)(2)

OSPEEDRy
[1:0] bit Symbol Parameter Conditions Min Typ Max Unit
value(1)

CL = 50 pF, VDD ≥ 2.70 V - - 4

CL = 50 pF, VDD≥ 1.7 V - - 2
fmax(IO)out Maximum frequency(3) MHz
CL = 10 pF, VDD ≥ 2.70 V - - 8
00
CL = 10 pF, VDD ≥ 1.7 V - - 4
Output high to low level fall
tf(IO)out/ CL = 50 pF, VDD = 1.7 V to
time and output low to high - - 100 ns
tr(IO)out 3.6 V
level rise time
CL = 50 pF, VDD ≥ 2.70 V - - 25
CL = 50 pF, VDD ≥ 1.7 V - - 12.5
fmax(IO)out Maximum frequency(3) MHz
CL = 10 pF, VDD ≥ 2.70 V - - 50
CL = 10 pF, VDD ≥ 1.7 V - - 20
01
CL = 50 pF, VDD ≥2.7 V - - 10
Output high to low level fall CL = 50 pF, VDD ≥ 1.7 V - - 20
tf(IO)out/
time and output low to high ns
tr(IO)out CL = 10 pF, VDD ≥ 2.70 V - - 6
level rise time
CL = 10 pF, VDD ≥ 1.7 V - - 10
CL = 40 pF, VDD ≥ 2.70 V - - 50(4)
CL = 40 pF, VDD ≥ 1.7 V - - 25
fmax(IO)out Maximum frequency(3) MHz
CL = 10 pF, VDD ≥ 2.70 V - - 100(4)
CL = 10 pF, VDD ≥ 1.7 V - - 50(4)
10
CL = 40 pF, VDD≥ 2.70 V - - 6
Output high to low level fall CL = 40 pF, VDD≥ 1.7 V - - 10
tf(IO)out/
time and output low to high ns
tr(IO)out CL = 10 pF, VDD≥ 2.70 V - - 4
level rise time
CL = 10 pF, VDD≥ 1.7 V - - 6
CL = 30 pF, VDD ≥ 2.70 V - - 100(4)
Fmax(IO)out Maximum frequency(3) CL = 30 pF, VDD ≥ 1.7 V - - 50(4) MHz
CL = 30 pF, VDD ≥ 2.70 V - - 4
11 Output high to low level fall CL = 30 pF, VDD ≥ 1.7 V - - 6
tf(IO)out/
time and output low to high ns
tr(IO)out CL = 10 pF, VDD≥ 2.70 V - - 2.5
level rise time
CL = 10 pF, VDD≥ 1.7 V - - 4
Pulse width of external signals
- tEXTIpw detected by the EXTI 10 - - ns
controller
1. Guaranteed by characterization, not tested in production.
2. The I/O speed is configured using the OSPEEDRy[1:0] bits. Refer to the STM32F4xx reference manual for a description of
the GPIOx_SPEEDR GPIO port output speed register.
3. The maximum frequency is defined in Figure 31.

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4. For maximum frequencies above 50 MHz and VDD > 2.4 V, the compensation cell should be used.

Figure 31. I/O AC characteristics definition

 

 

 

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6.3.17 NRST pin characteristics

The NRST pin input driver uses CMOS technology. It is connected to a permanent pull-up
resistor, RPU (see Table 53).
Unless otherwise specified, the parameters given in Table 56 are derived from tests
performed under the ambient temperature and VDD supply voltage conditions summarized
in Table 14. Refer to Table 53: I/O static characteristics for the values of VIH and VIL for
NRST pin.

Table 56. NRST pin characteristics

Symbol Parameter Conditions Min Typ Max Unit

Weak pull-up equivalent

RPU VIN = VSS 30 40 50 kΩ
resistor(1)
VF(NRST)(2) NRST Input filtered pulse - - 100 ns
(2)
VNF(NRST) NRST Input not filtered pulse VDD > 2.7 V 300 - - ns
Internal Reset
TNRST_OUT Generated reset pulse duration 20 - - µs
source
1. The pull-up is designed with a true resistance in series with a switchable PMOS. This PMOS contribution to the series
resistance must be minimum (~10% order).
2. Guaranteed by design, not tested in production.

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Figure 32. Recommended NRST pin protection

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1. The reset network protects the device against parasitic resets.

2. The user must ensure that the level on the NRST pin can go below the VIL(NRST) max level specified in
Table 56. Otherwise the reset is not taken into account by the device.

6.3.18 TIM timer characteristics

The parameters given in Table 57 are guaranteed by design.
Refer to Section 6.3.16: I/O port characteristics for details on the input/output alternate
function characteristics (output compare, input capture, external clock, PWM output).

Table 57. TIMx characteristics(1)(2)

Symbol Parameter Conditions(3) Min Max Unit

AHB/APBx prescaler=1 1 - tTIMxCLK

or 2 or 4, fTIMxCLK =
100 MHz 11.9 - ns
tres(TIM) Timer resolution time
AHB/APBx prescaler>4, 1 - tTIMxCLK
fTIMxCLK = 100 MHz 11.9 - ns

Timer external clock 0 fTIMxCLK/2 MHz

fEXT
frequency on CH1 to CH4 f
TIMxCLK = 100 MHz 0 50 MHz
ResTIM Timer resolution - 16/32 bit
16-bit counter clock
tCOUNTER period when internal clock fTIMxCLK = 100 MHz 0.0119 780 µs
is selected
65536 ×
- tTIMxCLK
Maximum possible count 65536
tMAX_COUNT
with 32-bit counter
fTIMxCLK = 100 MHz - 51.1 S
1. TIMx is used as a general term to refer to the TIM1 to TIM11 timers.
2. Guaranteed by design, not tested in production.
3. The maximum timer frequency on APB1 is 50 MHz and on APB2 is up to 100 MHz, by setting the TIMPRE
bit in the RCC_DCKCFGR register, if APBx prescaler is 1 or 2 or 4, then TIMxCLK = HCKL, otherwise
TIMxCLK >= 4x PCLKx.

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6.3.19 Communications interfaces

I2C interface characteristics
The I2C interface meets the requirements of the standard I2C communication protocol with
the following restrictions: the I/O pins SDA and SCL are mapped to are not “true” open-
drain. When configured as open-drain, the PMOS connected between the I/O pin and VDD is
disabled, but is still present.
The I2C characteristics are described in Table 58. Refer also to Section 6.3.16: I/O port
characteristics for more details on the input/output alternate function characteristics (SDA
and SCL).
The I2C bus interface supports standard mode (up to 100 kHz) and fast mode (up to 400
kHz). The I2C bus frequency can be increased up to 1 MHz. For more details about the
complete solution, please contact your local ST sales representative.

Table 58. I2C characteristics

Standard mode
Fast mode I2C(1)(2)
I2C(1)(2)
Symbol Parameter Unit
Min Max Min Max

tw(SCLL) SCL clock low time 4.7 - 1.3 -

µs
tw(SCLH) SCL clock high time 4.0 - 0.6 -
tsu(SDA) SDA setup time 250 - 100 -
th(SDA) SDA data hold time 0 3450(3) 0 900(4)
tr(SDA) ns
SDA and SCL rise time - 1000 - 300
tr(SCL)
tf(SDA)
SDA and SCL fall time - 300 - 300
tf(SCL)
th(STA) Start condition hold time 4.0 - 0.6 -
Repeated Start condition µs
tsu(STA) 4.7 - 0.6 -
setup time
tsu(STO) Stop condition setup time 4.0 - 0.6 - µs
Stop to Start condition time
tw(STO:STA) 4.7 - 1.3 - µs
(bus free)
Pulse width of the spikes
that are suppressed by the
tSP 0 50(5) 0 50(5) ns
analog filter for standard fast
mode
Capacitive load for each bus
Cb - 400 - 400 pF
line
1. Guaranteed by design, not tested in production.
2. fPCLK1 must be at least 2 MHz to achieve standard mode I2C frequencies. It must be at least 4 MHz to
achieve fast mode I2C frequencies, and a multiple of 10 MHz to reach the 400 kHz maximum I2C fast mode
clock.
3. The device must internally provide a hold time of at least 300 ns for the SDA signal in order to bridge the
undefined region of the falling edge of SCL.

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STM32F411xC STM32F411xE Electrical characteristics

4. The maximum data hold time has only to be met if the interface does not stretch the low period of SCL
signal.
5. The minimum width of the spikes filtered by the analog filter is above tSP (max)

Figure 33. I2C bus AC waveforms and measurement circuit

s ''B,& s ''B,&

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1. RS = series protection resistor.

2. RP = external pull-up resistor.
3. VDD_I2C is the I2C bus power supply.

Table 59. SCL frequency (fPCLK1= 50 MHz, VDD = VDD_I2C = 3.3 V)(1)(2)
I2C_CCR value
fSCL (kHz)
RP = 4.7 kΩ

400 0x8019
300 0x8021
200 0x8032
100 0x0096
50 0x012C
20 0x02EE
2
1. RP = External pull-up resistance, fSCL = I C speed
2. For speeds around 200 kHz, the tolerance on the achieved speed is of ±5%. For other speed ranges, the
tolerance on the achieved speed is ±2%. These variations depend on the accuracy of the external
components used to design the application.

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Electrical characteristics STM32F411xC STM32F411xE

SPI interface characteristics

Unless otherwise specified, the parameters given in Table 60 for the SPI interface are
derived from tests performed under the ambient temperature, fPCLKx frequency and VDD
supply voltage conditions summarized in Table 14, with the following configuration:
• Output speed is set to OSPEEDRy[1:0] = 10
• Capacitive load C = 30 pF
• Measurement points are done at CMOS levels: 0.5VDD
Refer to Section 6.3.16: I/O port characteristics for more details on the input/output alternate
function characteristics (NSS, SCK, MOSI, MISO for SPI).

Table 60. SPI dynamic characteristics(1)

Symbol Parameter Conditions Min Typ Max Unit

Master full duplex/receiver mode,

2.7 V < VDD < 3.6 V - - 42
SPI1/4/5
Master full duplex/receiver mode,
3.0 V < VDD < 3.6 V - - 50
SPI1/4/5
Master transmitter mode
1.7 V < VDD < 3.6 V - - 50
SPI1/4/5
Master mode
fSCK
SPI clock frequency 1.7 V < VDD < 3.6 V - - 25 MHz
1/tc(SCK)
SPI1/2/3/4/5
Slave transmitter/full duplex mode
2.7 V < VDD < 3.6 V - - 38(2)
SPI1/4/5
Slave receiver mode,
1.8 V < VDD < 3.6 V - - 50
SPI1/4/5
Slave mode,
1.8 V < VDD < 3.6 V - - 25
SPI1/2/3/4/5
Duty cycle of SPI clock
Duty(SCK) Slave mode 30 50 70 %
frequency
tw(SCKH) TPCLK
SCK high and low time Master mode, SPI presc = 2 TPCLK−1.5 TPCLK ns
tw(SCKL) +1.5

tsu(NSS) NSS setup time Slave mode, SPI presc = 2 3TPCLK - - ns

th(NSS) NSS hold time Slave mode, SPI presc = 2 2TPCLK - - ns
tsu(MI) Master mode 4 - - ns
Data input setup time
tsu(SI) Slave mode 2.5 - - ns
th(MI) Master mode 7.5 - - ns
Data input hold time
th(SI) Slave mode 3.5 - - ns

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STM32F411xC STM32F411xE Electrical characteristics

Table 60. SPI dynamic characteristics(1) (continued)

Symbol Parameter Conditions Min Typ Max Unit

ta(SO) Data output access time Slave mode 7 - 21 ns

tdis(SO) Data output disable time Slave mode 5 - 12 ns
Slave mode (after enable edge),
- 11 13 ns
2.7 V < VDD < 3.6 V
tv(SO) Data output valid time
Slave mode (after enable edge),
- 11 18.5 ns
1.7 V < VDD < 3.6 V
Slave mode (after enable edge),
th(SO) Data output hold time 8 - - ns
1.7 V < VDD < 3.6 V
tv(MO) Data output valid time Master mode (after enable edge) - 4 6 ns
th(MO) Data output hold time Master mode (after enable edge) 0 - - ns
1. Guaranteed by characterization, not tested in production.
2. Maximum frequency in Slave transmitter mode is determined by the sum of tv(SO) and tsu(MI) which has to fit into SCK low or
high phase preceding the SCK sampling edge. This value can be achieved when the SPI communicates with a master
having tsu(MI) = 0 while Duty(SCK) = 50%

Figure 34. SPI timing diagram - slave mode and CPHA = 0

NSS input

tc(SCK)

tSU(NSS) th(NSS)

CPHA= 0
SCK Input

CPOL=0
tw(SCKH)
CPHA= 0 tw(SCKL)
CPOL=1

ta(SO) tv(SO) th(SO) tr(SCK) tdis(SO)

tf(SCK)
MISO
OUT P UT MS B O UT BI T6 OUT LSB OUT
tsu(SI)
MOSI
M SB IN B I T1 IN LSB IN
I NPUT
th(SI)
ai14134c

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Figure 35. SPI timing diagram - slave mode and CPHA = 1(1)

NSS input
tSU(NSS) tc(SCK) th(NSS)

CPHA=1
SCK Input

CPOL=0
tw(SCKH)
CPHA=1 tw(SCKL)
CPOL=1

tv(SO) th(SO) tr(SCK) tdis(SO)

ta(SO) tf(SCK)
MISO
OUT P UT MS B O UT BI T6 OUT LSB OUT
tsu(SI) th(SI)
MOSI
M SB IN B I T1 IN LSB IN
I NPUT

ai14135

Figure 36. SPI timing diagram - master mode(1)

High

NSS input

tc(SCK)

CPHA= 0
SCK Input

CPOL=0
CPHA= 0
CPOL=1

CPHA=1
SCK Input

CPOL=0
CPHA=1
CPOL=1

tw(SCKH) tr(SCK)
tsu(MI) tw(SCKL) tf(SCK)
MISO
INP UT MS BIN BI T6 IN LSB IN

th(MI)
MOSI
M SB OUT B I T1 OUT LSB OUT
OUTPUT
tv(MO) th(MO)

ai14136

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I2S interface characteristics

Unless otherwise specified, the parameters given in Table 61 for the I2S interface are
derived from tests performed under the ambient temperature, fPCLKx frequency and VDD
supply voltage conditions summarized in Table 14, with the following configuration:
• Output speed is set to OSPEEDRy[1:0] = 10
• Capacitive load C = 30 pF
• Measurement points are done at CMOS levels: 0.5VDD
Refer to Section 6.3.16: I/O port characteristics for more details on the input/output alternate
function characteristics (CK, SD, WS).

Table 61. I2S dynamic characteristics(1)

Symbol Parameter Conditions Min Max Unit

fMCK I2S Main clock output - 256x8K 256xFs(2) MHz

Master data: 32 bits - 64xFs
fCK I2S clock frequency MHz
Slave data: 32 bits - 64xFs
DCK I2S clock frequency duty cycle Slave receiver 30 70 %
tv(WS) WS valid time Master mode 0 7
th(WS) WS hold time Master mode 1.5 -
tsu(WS) WS setup time Slave mode 1.5 -
th(WS) WS hold time Slave mode 3 -
tsu(SD_MR) Master receiver 1 -
Data input setup time
tsu(SD_SR) Slave receiver 2.5 - ns
th(SD_MR) Master receiver 7 -
Data input hold time
th(SD_SR) Slave receiver 2.5 -
tv(SD_ST) Slave transmitter (after enable edge) - 20
Data output valid time
tv(SD_MT) Master transmitter (after enable edge) - 6
th(SD_ST) Slave transmitter (after enable edge) 8 -
Data output hold time
th(SD_MT) Master transmitter (after enable edge) 2 -

1. Guaranteed by characterization, not tested in production.

2. The maximum value of 256xFs is 50 MHz (APB1 maximum frequency).

Note: Refer to the I2S section of RM0383 reference manual for more details on the sampling
frequency (FS).
fMCK, fCK, and DCK values reflect only the digital peripheral behavior. The values of these
parameters might be slightly impacted by the source clock precision. DCK depends mainly
on the value of ODD bit. The digital contribution leads to a minimum value of
(I2SDIV/(2*I2SDIV+ODD) and a maximum value of (I2SDIV+ODD)/(2*I2SDIV+ODD). FS
maximum value is supported for each mode/condition.

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Figure 37. I2S slave timing diagram (Philips protocol)(1)

tc(CK)

CK Input CPOL = 0

CPOL = 1

tw(CKH) tw(CKL) th(WS)

WS input

tsu(WS) tv(SD_ST) th(SD_ST)

SDtransmit
LSB transmit(2) MSB transmit Bitn transmit LSB transmit

tsu(SD_SR) th(SD_SR)

SDreceive LSB receive(2) MSB receive Bitn receive LSB receive

ai14881b

1. LSB transmit/receive of the previously transmitted byte. No LSB transmit/receive is sent before the first
byte.

Figure 38. I2S master timing diagram (Philips protocol)(1)

tf(CK) tr(CK)

tc(CK)
CK output

CPOL = 0
tw(CKH)

CPOL = 1
tv(WS) tw(CKL) th(WS)

WS output

tv(SD_MT) th(SD_MT)

SDtransmit LSB transmit(2) MSB transmit Bitn transmit LSB transmit

tsu(SD_MR) th(SD_MR)

SDreceive LSB receive(2) MSB receive Bitn receive LSB receive

ai14884b

1. LSB transmit/receive of the previously transmitted byte. No LSB transmit/receive is sent before the first
byte.

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STM32F411xC STM32F411xE Electrical characteristics

USB OTG full speed (FS) characteristics

This interface is present in USB OTG FS controller.

Table 62. USB OTG FS startup time

Symbol Parameter Max Unit

tSTARTUP(1) USB OTG FS transceiver startup time 1 µs

1. Guaranteed by design, not tested in production.

Table 63. USB OTG FS DC electrical characteristics

Symbol Parameter Conditions Min.(1) Typ. Max.(1) Unit

USB OTG FS operating

VDD 3.0(2) - 3.6 V
voltage
VDI(3) Differential input sensitivity I(USB_FS_DP/DM) 0.2 - -
Input
levels Differential common mode
VCM(3) Includes VDI range 0.8 - 2.5
range V
Single ended receiver
VSE(3) 1.3 - 2.0
threshold

Output VOL Static output level low RL of 1.5 kΩ to 3.6 V(4) - - 0.3
V
levels VOH Static output level high RL of 15 kΩ to VSS(4) 2.8 - 3.6
PA11, PA12
17 21 24
RPD (USB_FS_DM/DP) VIN = VDD
PA9 (OTG_FS_VBUS) 0.65 1.1 2.0
kΩ
PA11, PA12
VIN = VSS 1.5 1.8 2.1
RPU (USB_FS_DM/DP)
PA9 (OTG_FS_VBUS) VIN = VSS 0.25 0.37 0.55
1. All the voltages are measured from the local ground potential.
2. The USB OTG FS functionality is ensured down to 2.7 V but not the full USB full speed electrical
characteristics which are degraded in the 2.7-to-3.0 V VDD voltage range.
3. Guaranteed by design, not tested in production.
4. RL is the load connected on the USB OTG FS drivers.

Note: When VBUS sensing feature is enabled, PA9 should be left at their default state (floating
input), not as alternate function. A typical 200 µA current consumption of the embedded
sensing block (current to voltage conversion to determine the different sessions) can be
observed on PA9 when the feature is enabled.

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Figure 39. USB OTG FS timings: definition of data signal rise and fall time
Crossover
points
Differen tial
Data L ines
VCRS

VS S
tf tr
ai14137

Table 64. USB OTG FS electrical characteristics(1)

Driver characteristics

Symbol Parameter Conditions Min Max Unit

tr Rise time(2) CL = 50 pF 4 20 ns
tf Fall time(2) CL = 50 pF 4 20 ns
trfm Rise/ fall time matching tr/tf 90 110 %
VCRS Output signal crossover voltage 1.3 2.0 V
1. Guaranteed by design, not tested in production.
2. Measured from 10% to 90% of the data signal. For more detailed informations, please refer to USB
Specification - Chapter 7 (version 2.0).

6.3.20 12-bit ADC characteristics

Unless otherwise specified, the parameters given in Table 65 are derived from tests
performed under the ambient temperature, fPCLK2 frequency and VDDA supply voltage
conditions summarized in Table 14.

Table 65. ADC characteristics

Symbol Parameter Conditions Min Typ Max Unit

VDDA Power supply 1.7(1) - 3.6 V

VDDA − VREF+ < 1.2 V
VREF+ (1)
Positive reference voltage 1.7 - VDDA V
VDDA = 1.7 (1)
to 2.4 V 0.6 15 18 MHz
fADC ADC clock frequency
VDDA = 2.4 to 3.6 V 0.6 30 36 MHz
fADC = 30 MHz,
- - 1764 kHz
fTRIG(2) External trigger frequency 12-bit resolution
- - 17 1/fADC
0 (VSSA or VREF-
VAIN Conversion voltage range(3) - VREF+ V
tied to ground)
See Equation 1 for
RAIN(2) External input impedance - - 50 kΩ
details
RADC(2)(4) Sampling switch resistance - - 6 kΩ
Internal sample and hold
CADC(2) - 4 7 pF
capacitor

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STM32F411xC STM32F411xE Electrical characteristics

Table 65. ADC characteristics (continued)

Symbol Parameter Conditions Min Typ Max Unit

Injection trigger conversion fADC = 30 MHz - - 0.100 µs

tlat(2)
latency - - 3(5) 1/fADC

Regular trigger conversion fADC = 30 MHz - - 0.067 µs

tlatr(2)
latency - - 2(5) 1/fADC
fADC = 30 MHz 0.100 - 16 µs
tS(2) Sampling time
3 - 480 1/fADC
tSTAB(2) Power-up time - 2 3 µs
fADC = 30 MHz
0.50 - 16.40 µs
12-bit resolution
fADC = 30 MHz
0.43 - 16.34 µs
10-bit resolution
Total conversion time (including fADC = 30 MHz
tCONV(2) 0.37 - 16.27 µs
sampling time) 8-bit resolution
fADC = 30 MHz
0.30 - 16.20 µs
6-bit resolution
9 to 492 (tS for sampling +n-bit resolution for successive
1/fADC
approximation)
12-bit resolution
- - 2 Msps
Single ADC

Sampling rate 12-bit resolution

Interleave Dual ADC - - 3.75 Msps
fS(2) (fADC = 30 MHz, and
mode
tS = 3 ADC cycles)
12-bit resolution
Interleave Triple ADC - - 6 Msps
mode
ADC VREF DC current
IVREF+(2) consumption in conversion - 300 500 µA
mode
ADC VDDA DC current
IVDDA(2) consumption in conversion - 1.6 1.8 mA
mode
1. VDDA minimum value of 1.7 V is possible with the use of an external power supply supervisor (refer to Section 3.15.2:
Internal reset OFF).
2. Guaranteed by characterization, not tested in production.
3. VREF+ is internally connected to VDDA and VREF- is internally connected to VSSA.
4. RADC maximum value is given for VDD=1.7 V, and minimum value for VDD=3.3 V.
5. For external triggers, a delay of 1/fPCLK2 must be added to the latency specified in Table 65.

Equation 1: RAIN max formula

( k – 0,5 )
R AIN - – R ADC
= -------------------------------------------------------------
N+2
f ADC × C ADC × ln ( 2 )

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Electrical characteristics STM32F411xC STM32F411xE

The formula above (Equation 1) is used to determine the maximum external impedance
allowed for an error below 1/4 of LSB. N = 12 (from 12-bit resolution) and k is the number of
sampling periods defined in the ADC_SMPR1 register.

Table 66. ADC accuracy at fADC = 18 MHz(1)

Symbol Parameter Test conditions Typ Max(2) Unit

ET Total unadjusted error ±3 ±4

fADC =18 MHz
EO Offset error ±2 ±3
VDDA = 1.7 to 3.6 V
LSB
EG Gain error VREF = 1.7 to 3.6 V ±1 ±3
ED Differential linearity error VDDA − VREF < 1.2 V ±1 ±2
EL Integral linearity error ±2 ±3
1. Better performance could be achieved in restricted VDD, frequency and temperature ranges.
2. Guaranteed by characterization, not tested in production.

Table 67. ADC accuracy at fADC = 30 MHz(1)

Symbol Parameter Test conditions Typ Max(2) Unit

ET Total unadjusted error ±2 ±5

fADC = 30 MHz,
EO Offset error ±1.5 ±2.5
RAIN < 10 kΩ,
EG Gain error VDDA = 2.4 to 3.6 V, ±1.5 ±4 LSB
VREF = 1.7 to 3.6 V,
ED Differential linearity error ±1 ±2
VDDA − VREF < 1.2 V
EL Integral linearity error ±1.5 ±3
1. Better performance could be achieved in restricted VDD, frequency and temperature ranges.
2. Guaranteed by characterization, not tested in production.

Table 68. ADC accuracy at fADC = 36 MHz(1)

Symbol Parameter Test conditions Typ Max(2) Unit

ET Total unadjusted error ±4 ±7

EO Offset error fADC =36 MHz, ±2 ±3

VDDA = 2.4 to 3.6 V,
EG Gain error ±3 ±6 LSB
VREF = 1.7 to 3.6 V
ED Differential linearity error VDDA − VREF < 1.2 V ±2 ±3
EL Integral linearity error ±3 ±6
1. Better performance could be achieved in restricted VDD, frequency and temperature ranges.
2. Guaranteed by characterization, not tested in production.

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STM32F411xC STM32F411xE Electrical characteristics

Table 69. ADC dynamic accuracy at fADC = 18 MHz - limited test conditions(1)
Symbol Parameter Test conditions Min Typ Max Unit

ENOB Effective number of bits 10.3 10.4 - bits

fADC =18 MHz
SINAD Signal-to-noise and distortion ratio VDDA = VREF+= 1.7 V 64 64.2 -
SNR Signal-to-noise ratio Input Frequency = 20 KHz 64 65 - dB
Temperature = 25 °C
THD Total harmonic distortion - -72 -67
1. Guaranteed by characterization, not tested in production.

Table 70. ADC dynamic accuracy at fADC = 36 MHz - limited test conditions(1)
Symbol Parameter Test conditions Min Typ Max Unit

ENOB Effective number of bits 10.6 10.8 - bits

fADC = 36 MHz
SINAD Signal-to noise and distortion ratio VDDA = VREF+ = 3.3 V 66 67 -
SNR Signal-to noise ratio Input Frequency = 20 KHz 64 68 - dB
Temperature = 25 °C
THD Total harmonic distortion - -72 -70
1. Guaranteed by characterization, not tested in production.

Note: ADC accuracy vs. negative injection current: injecting a negative current on any analog
input pins should be avoided as this significantly reduces the accuracy of the conversion
being performed on another analog input. It is recommended to add a Schottky diode (pin to
ground) to analog pins which may potentially inject negative currents.
Any positive injection current within the limits specified for IINJ(PIN) and ΣIINJ(PIN) in
Section 6.3.16 does not affect the ADC accuracy.

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Electrical characteristics STM32F411xC STM32F411xE

Figure 40. ADC accuracy characteristics

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1. See also Table 67.

2. Example of an actual transfer curve.
3. Ideal transfer curve.
4. End point correlation line.
5. ET = Total Unadjusted Error: maximum deviation between the actual and the ideal transfer curves.
EO = Offset Error: deviation between the first actual transition and the first ideal one.
EG = Gain Error: deviation between the last ideal transition and the last actual one.
ED = Differential Linearity Error: maximum deviation between actual steps and the ideal one.
EL = Integral Linearity Error: maximum deviation between any actual transition and the end point
correlation line.

Figure 41. Typical connection diagram using the ADC

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1. Refer to Table 65 for the values of RAIN, RADC and CADC.

2. Cparasitic represents the capacitance of the PCB (dependent on soldering and PCB layout quality) plus the
pad capacitance (roughly 5 pF). A high Cparasitic value downgrades conversion accuracy. To remedy this,
fADC should be reduced.

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STM32F411xC STM32F411xE Electrical characteristics

General PCB design guidelines

Power supply decoupling should be performed as shown in Figure 42 or Figure 43,
depending on whether VREF+ is connected to VDDA or not. The 10 nF capacitors should be
ceramic (good quality). They should be placed them as close as possible to the chip.

Figure 42. Power supply and reference decoupling (VREF+ not connected to VDDA)

STM32F

V REF+
(See note 1)

1 µF // 10 nF V DDA

1 µF // 10 nF
V SSA/V REF-
(See note 1)

ai17535

1. VREF+ and VREF- inputs are both available on UFBGA100. VREF+ is also available on LQFP100. When
VREF+ and VREF- are not available, they are internally connected to VDDA and VSSA.

Figure 43. Power supply and reference decoupling (VREF+ connected to VDDA)

STM32F

VREF+/VDDA
(See note 1)

1 µF // 10 nF

VREF–/VSSA
(See note 1)

ai17536

1. VREF+ and VREF- inputs are both available on UFBGA100. VREF+ is also available on LQFP100. When
VREF+ and VREF- are not available, they are internally connected to VDDA and VSSA.

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Electrical characteristics STM32F411xC STM32F411xE

6.3.21 Temperature sensor characteristics

Table 71. Temperature sensor characteristics

Symbol Parameter Min Typ Max Unit

TL(1) VSENSE linearity with temperature - ±1 ±2 °C

(1)
Avg_Slope Average slope - 2.5 - mV/°C
V25(1) Voltage at 25 °C - 0.76 - V
tSTART(2) Startup time - 6 10 µs
TS_temp(2) ADC sampling time when reading the temperature (1 °C accuracy) 10 - - µs
1. Guaranteed by characterization, not tested in production.
2. Guaranteed by design, not tested in production.

Table 72. Temperature sensor calibration values

Symbol Parameter Memory address

TS_CAL1 TS ADC raw data acquired at temperature of 30 °C, VDDA= 3.3 V 0x1FFF 7A2C - 0x1FFF 7A2D
TS_CAL2 TS ADC raw data acquired at temperature of 110 °C, VDDA= 3.3 V 0x1FFF 7A2E - 0x1FFF 7A2F

6.3.22 VBAT monitoring characteristics

Table 73. VBAT monitoring characteristics

Symbol Parameter Min Typ Max Unit

R Resistor bridge for VBAT - 50 - KΩ

Q Ratio on VBAT measurement - 4 -
Er(1) Error on Q –1 - +1 %
ADC sampling time when reading the VBAT
TS_vbat(2)(2) 5 - - µs
1 mV accuracy
1. Guaranteed by design, not tested in production.
2. Shortest sampling time can be determined in the application by multiple iterations.

6.3.23 Embedded reference voltage

The parameters given in Table 74 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 14.

Table 74. Embedded internal reference voltage

Symbol Parameter Conditions Min Typ Max Unit

VREFINT Internal reference voltage –40 °C < TA < +105 °C 1.18 1.21 1.24 V
ADC sampling time when reading the
TS_vrefint(1) - 10 - - µs
internal reference voltage
Internal reference voltage spread over the
VRERINT_s(2) VDD = 3V ± 10mV - 3 5 mV
temperature range

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STM32F411xC STM32F411xE Electrical characteristics

Table 74. Embedded internal reference voltage (continued)

Symbol Parameter Conditions Min Typ Max Unit

TCoeff(2) Temperature coefficient - - 30 50 ppm/°C

tSTART (2) Startup time - - 6 10 µs
1. Shortest sampling time can be determined in the application by multiple iterations.
2. Guaranteed by design, not tested in production

Table 75. Internal reference voltage calibration values

Symbol Parameter Memory address

Raw data acquired at temperature of

VREFIN_CAL 0x1FFF 7A2A - 0x1FFF 7A2B
30 °C VDDA = 3.3 V

6.3.24 SD/SDIO MMC/eMMC card host interface (SDIO) characteristics

Unless otherwise specified, the parameters given in Table 76 for the SDIO/MMC/eMMC
interface are derived from tests performed under the ambient temperature, fPCLK2 frequency
and VDD supply voltage conditions summarized in Table 14, with the following configuration:
• Output speed is set to OSPEEDRy[1:0] = 10
• Capacitive load C = 30 pF (for eMMC C = 20 pF)
• Measurement points are done at CMOS levels: 0.5VDD
Refer to Section 6.3.16: I/O port characteristics for more details on the input/output
characteristics.

Figure 44. SDIO high-speed mode

tf tr

tC

tW(CKH) tW(CKL)

CK

tOV tOH
D, CMD
(output)

tISU tIH

D, CMD
(input)
ai14887

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Electrical characteristics STM32F411xC STM32F411xE

Figure 45. SD default mode

CK
tOVD tOHD
D, CMD
(output)

ai14888

Table 76. Dynamic characteristics: SD / MMC characteristics(1)(2)

Symbol Parameter Conditions Min Typ Max Unit

Clock frequency in data transfer

fPP - 0 - 50 MHz
mode
- SDIO_CK/fPCLK2 frequency ratio - - - 8/3 -
tW(CKL) Clock low time fpp = 50 MHz 10.5 11 -
ns
tW(CKH) Clock high time fpp = 50 MHz 8.5 9 -

CMD, D inputs (referenced to CK) in MMC and SD HS mode

tISU Input setup time HS fpp = 50 MHz 2.5 - -

fpp = 50 MHz
5 - -
-40°C<TA<105°C ns
tIH Input hold time HS
fpp = 50 MHz
2.5 - -
-40°C<TA<+85°C

CMD, D outputs (referenced to CK) in MMC and SD HS mode

tOV Output valid time HS fpp = 50 MHz - 3.5 4

ns
tOH Output hold time HS fpp = 50 MHz 2 - -

CMD, D inputs (referenced to CK) in SD default mode

tISUD Input setup time SD fpp = 25 MHz 3 - -

ns
tIHD Input hold time SD fpp = 25 MHz 4 - -

CMD, D outputs (referenced to CK) in SD default mode

tOVD Output valid default time SD fpp =25 MHz - 5 5.5

ns
tOHD Output hold default time SD fpp =25 MHz 4.5 - -
1. Data based on characterization results, not tested in production.
2. VDD = 2.7 to 3.6 V.

118/146 DocID026289 Rev 4

STM32F411xC STM32F411xE Electrical characteristics

Table 77. Dynamic characteristics: eMMC characteristics VDD = 1.7 V to 1.9 V(1)(2)
Symbol Parameter Conditions Min Typ Max Unit

Clock frequency in data transfer

fPP - 0 - 50 MHz
mode
- SDIO_CK/fPCLK2 frequency ratio - - - 8/3 -
tW(CKL) Clock low time fpp = 50 MHz 10 10.5 -
ns
tW(CKH) Clock high time fpp = 50 MHz 9 9.5 -

CMD, D inputs (referenced to CK) in eMMC mode

tISU Input setup time HS fpp = 50 MHz 0 - - ns

tIH Input hold time HS fpp = 50 MHz 6 - -

CMD, D outputs (referenced to CK) in eMMC mode

tOV Output valid time HS fpp = 50 MHz - 3.5 5

ns
tOH Output hold time HS fpp = 50 MHz 2 - -
1. Data based on characterization results, not tested in production.
2. Cload = 20 pF

6.3.25 RTC characteristics

Table 78. RTC characteristics

Symbol Parameter Conditions Min Max

Any read/write operation

- fPCLK1/RTCCLK frequency ratio 4 -
from/to an RTC register

DocID026289 Rev 4 119/146

119
Package characteristics STM32F411xC STM32F411xE

7 Package characteristics

7.1 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.

120/146 DocID026289 Rev 4

STM32F411xC STM32F411xE Package characteristics

7.1.1 WLCSP49, 3.034 x 3.22 mm, 0.4 mm pitch wafer level chip
scale package

Figure 46. WLCSP49 wafer level chip scale package outline

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1. Drawing is not to scale.

DocID026289 Rev 4 121/146

138
Package characteristics STM32F411xC STM32F411xE

Table 79. STM32F411xC/xE WLCSP49 wafer level chip scale

package mechanical data
millimeters inches(1)
Symbol
Min Typ Max Min Typ Max

A 0.525 0.555 0.585 0.0207 0.0219 0.0230

A1 - 0.175 - - 0.0069 -
A2 - 0.380 - - 0.0150 -
(2)
A3 - 0.025 - - 0.0010 -
(3)
b 0.220 0.250 0.280 0.0087 0.0098 0.0110
D 2.964 2.999 3.034 0.1167 0.1181 0.1194
E 3.150 3.185 3.220 0.1240 0.1254 0.1268
e - 0.400 - - 0.0157 -
e1 - 2.400 - - 0.0945 -
e2 - 2.400 - - 0.0945 -
F - 0.2995 - - 0.0118 -
G - 0.3925 - - 0.0155 -
aaa - 0.100 - - 0.0039 -
bbb - 0.100 - - 0.0039 -
ccc - 0.100 - - 0.0039 -
ddd - 0.050 - - 0.0020 -
eee - 0.050 - - 0.0020 -
1. Values in inches are converted from mm and rounded to 4 decimal digits.
2. Back side coating
3. Dimension is measured at the maximum bump diameter parallel to primary datum Z.

Figure 47. WLCSP49 0.4 mm pitch wafer level chip scale recommended footprint

'SDG

'VP 069

122/146 DocID026289 Rev 4

STM32F411xC STM32F411xE Package characteristics

Table 80. WLCSP49 recommended PCB design rules (0.4 mm pitch)

Dimension Recommended values

Pitch 0.4 mm
260 µm max. (circular)
Dpad
220 µm recommended
Dsm 300 µm min. (for 260 µm diameter pad)
PCB pad design Non-solder mask defined via underbump allowed

Device marking

Figure 48. Example of WLCSP49 marking (top view)

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1. Parts marked as “ES”, “E” or accompanied by an Engineering Sample notification letter, are not yet
qualified and therefore not yet ready to be used in production and any consequences deriving from such
usage will not be at ST charge. In no event, ST will be liable for any customer usage of these engineering
samples in production. ST Quality has to be contacted prior to any decision to use these Engineering
samples to run qualification activity.

DocID026289 Rev 4 123/146

138
Package characteristics STM32F411xC STM32F411xE

7.1.2 UFQFPN48, 7 x 7 mm, 0.5 mm pitch package

Figure 49. UFQFPN48, 7 x 7 mm, 0.5 mm pitch, package outline

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$%B0(B9

1. Drawing is not to scale.

2. All leads/pads should also be soldered to the PCB to improve the lead/pad solder joint life.
3. There is an exposed die pad on the underside of the UFQFPN package. It is recommended to connect and
solder this back-side pad to PCB ground.

Table 81. UFQFPN48, 7 x 7 mm, 0.5 mm pitch, package mechanical data

millimeters inches(1)
Symbol
Min. Typ. Max. Min. Typ. Max.

A 0.500 0.550 0.600 0.0197 0.0217 0.0236

A1 0.000 0.020 0.050 0.0000 0.0008 0.0020
D 6.900 7.000 7.100 0.2717 0.2756 0.2795
E 6.900 7.000 7.100 0.2717 0.2756 0.2795
D2 5.500 5.600 5.700 0.2165 0.2205 0.2244
E2 5.500 5.600 5.700 0.2165 0.2205 0.2244
L 0.300 0.400 0.500 0.0118 0.0157 0.0197

124/146 DocID026289 Rev 4

STM32F411xC STM32F411xE Package characteristics

Table 81. UFQFPN48, 7 x 7 mm, 0.5 mm pitch, package mechanical data (continued)
millimeters inches(1)
Symbol
Min. Typ. Max. Min. Typ. Max.

T - 0.152 - - 0.0060 -
b 0.200 0.250 0.300 0.0079 0.0098 0.0118
e - 0.500 - - 0.0197 -
1. Values in inches are converted from mm and rounded to 4 decimal digits.

Figure 50. UFQFPN48 recommended footprint





 

 

 








 

 

 


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1. Dimensions are in millimeters.

DocID026289 Rev 4 125/146

138
Package characteristics STM32F411xC STM32F411xE

Device marking

Figure 51. Example of UFQFPN48 marking (top view)

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5

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1. Parts marked as “ES”, “E” or accompanied by an Engineering Sample notification letter, are not yet
qualified and therefore not yet ready to be used in production and any consequences deriving from such
usage will not be at ST charge. In no event, ST will be liable for any customer usage of these engineering
samples in production. ST Quality has to be contacted prior to any decision to use these Engineering
samples to run qualification activity.

126/146 DocID026289 Rev 4

STM32F411xC STM32F411xE Package characteristics

7.1.3 LQFP64, 10 x 10 mm, 64-pin low-profile quad flat package

Figure 52. LQFP64, 10 x 10 mm, 64-pin low-profile quad flat package outline

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1. Drawing is not to scale.

DocID026289 Rev 4 127/146

138
Package characteristics STM32F411xC STM32F411xE

Table 82. LQFP64, 10 x 10 mm, 64-pin low-profile quad flat package mechanical data
millimeters inches(1)
Symbol
Min. Typ. Max. Min. Typ. Max.

A - - 1.60 - - 0.0630
A1 0.05 - 0.15 0.0020 - 0.0059
A2 1.35 1.40 1.45 0.0531 0.0551 0.0571
b 0.17 0.22 0.27 0.0067 0.0087 0.0106
c 0.09 - 0.20 0.0035 - 0.0079
D - 12.00 - - 0.4724 -
D1 - 10.00 - - 0.3937 -
E - 12.00 - - 0.4724 -
E1 - 10.00 - - 0.3937 -
e - 0.50 - - 0.0197 -
K 0° 3.5° 7° 0° 3.5° 7°
L 0.45 0.60 0.75 0.0177 0.0236 0.0295
L1 - 1.00 - - 0.0394 -

Number of pins
N
64
1. Values in inches are converted from mm and rounded to 4 decimal digits.

Figure 53. LQFP64 recommended footprint

 


  






 


 





AIC

1. Dimensions are in millimeters.

128/146 DocID026289 Rev 4

STM32F411xC STM32F411xE Package characteristics

Device marking

Figure 54. Example of LQFP64 marking (top view)

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670)

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1. Parts marked as “ES”, “E” or accompanied by an Engineering Sample notification letter, are not yet
qualified and therefore not yet ready to be used in production and any consequences deriving from such
usage will not be at ST charge. In no event, ST will be liable for any customer usage of these engineering
samples in production. ST Quality has to be contacted prior to any decision to use these Engineering
samples to run qualification activity.

DocID026289 Rev 4 129/146

138
Package characteristics STM32F411xC STM32F411xE

7.1.4 LQFP100, 14 x 14 mm, 100-pin low-profile quad flat package

Figure 55. LQFP100, 14 x 14 mm, 100-pin low-profile quad flat package outline

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1. Drawing is not to scale.

130/146 DocID026289 Rev 4

STM32F411xC STM32F411xE Package characteristics

Table 83. LQPF100, 14 x 14 mm, 100-pin low-profile quad flat package mechanical data
millimeters inches(1)
Symbol
Min. Typ. Max. Min. Typ. Max.

A - - 1.6 - - 0.063
A1 0.05 - 0.15 0.002 - 0.0059
A2 1.35 1.4 1.45 0.0531 0.0551 0.0571
b 0.17 0.22 0.27 0.0067 0.0087 0.0106
c 0.09 - 0.2 0.0035 - 0.0079
D 15.8 16 16.2 0.622 0.6299 0.6378
D1 13.8 14 14.2 0.5433 0.5512 0.5591
D3 - 12 - - 0.4724 -
E 15.8 16 16.2 0.622 0.6299 0.6378
E1 13.8 14 14.2 0.5433 0.5512 0.5591
E3 - 12 - - 0.4724 -
e - 0.5 - - 0.0197 -
L 0.45 0.6 0.75 0.0177 0.0236 0.0295
L1 - 1 - - 0.0394 -
K 0.0° 3.5° 7.0° 0.0° 3.5° 7.0°
ccc 0.08 0.0031
1. Values in inches are converted from mm and rounded to 4 decimal digits.

DocID026289 Rev 4 131/146

138
Package characteristics STM32F411xC STM32F411xE

Figure 56. LQFP100 recommended footprint

 

 




 

 


 





AIC

1. Dimensions are in millimeters.

Device marking

Figure 57. Example of LQPF100 marking (top view)

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1. Parts marked as “ES”, “E” or accompanied by an Engineering Sample notification letter, are not yet
qualified and therefore not yet ready to be used in production and any consequences deriving from such
usage will not be at ST charge. In no event, ST will be liable for any customer usage of these engineering
samples in production. ST Quality has to be contacted prior to any decision to use these Engineering
samples to run qualification activity.

132/146 DocID026289 Rev 4

STM32F411xC STM32F411xE Package characteristics

7.1.5 UFBGA100, 7 x 7 mm, 0.5 mm pitch package

Figure 58. UFBGA100, 7 x 7 mm, 0.50 mm pitch, ultra fine pitch ball grid array
package outline
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1. Drawing is not to scale.

Table 84. UFBGA100, 7 x 7 mm, 0.50 mm pitch, ultra fine pitch ball grid array package
mechanical data
millimeters inches(1)
Symbol
Min. Typ. Max. Min. Typ. Max.

A 0.460 0.530 0.600 0.0181 0.0209 0.0236

A1 0.050 0.080 0.110 0.0020 0.0031 0.0043
A2 0.400 0.450 0.500 0.0157 0.0177 0.0197
A3 - 0.130 - - 0.0051 -
A4 0.270 0.320 0.370 0.0106 0.0126 0.0146
b 0.200 0.250 0.300 0.0079 0.0098 0.0118
D 6.950 7.000 7.050 0.2736 0.2756 0.2776
D1 5.450 5.500 5.550 0.2146 0.2165 0.2185
E 6.950 7.000 7.050 0.2736 0.2756 0.2776
E1 5.450 5.500 5.550 0.2146 0.2165 0.2185
e - 0.500 - - 0.0197 -
F 0.700 0.750 0.800 0.0276 0.0295 0.0315

DocID026289 Rev 4 133/146

138
Package characteristics STM32F411xC STM32F411xE

Table 84. UFBGA100, 7 x 7 mm, 0.50 mm pitch, ultra fine pitch ball grid array package
mechanical data (continued)
millimeters inches(1)
Symbol
Min. Typ. Max. Min. Typ. Max.

ddd - - 0.100 - - 0.0039

eee - - 0.150 - - 0.0059
fff - - 0.050 - - 0.0020
1. Values in inches are converted from mm and rounded to 4 decimal digits.

Figure 59. Recommended PCB design rules for pads (0.5 mm-pitch BGA)

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1. Non solder mask defined (NSMD) pads are recommended.

2. 4 to 6 mils solder paste screen printing process.

134/146 DocID026289 Rev 4

STM32F411xC STM32F411xE Package characteristics

Device marking

Figure 60. Example of UFBGA100 marking (top view)

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1. Parts marked as “ES”, “E” or accompanied by an Engineering Sample notification letter, are not yet
qualified and therefore not yet ready to be used in production and any consequences deriving from such
usage will not be at ST charge. In no event, ST will be liable for any customer usage of these engineering
samples in production. ST Quality has to be contacted prior to any decision to use these Engineering
samples to run qualification activity.

DocID026289 Rev 4 135/146

138
Package characteristics STM32F411xC STM32F411xE

7.2 Thermal characteristics

The maximum chip junction temperature (TJmax) must never exceed the values given in
Table 14: General operating conditions on page 60.
The maximum chip-junction temperature, TJ max., in degrees Celsius, may be calculated
using the following equation:
TJ max = TA max + (PD max x ΘJA)
Where:
• TA max is the maximum ambient temperature in °C,
• ΘJA is the package junction-to-ambient thermal resistance, in °C/W,
• PD max is the sum of PINT max and PI/O max (PD max = PINT max + PI/Omax),
• PINT max is the product of IDD and VDD, expressed in Watts. This is the maximum chip
internal power.
PI/O max represents the maximum power dissipation on output pins where:
PI/O max = Σ (VOL × IOL) + Σ((VDD – VOH) × IOH),
taking into account the actual VOL / IOL and VOH / IOH of the I/Os at low and high level in the
application.

7.2.1 Reference document

JESD51-2 Integrated Circuits Thermal Test Method Environment Conditions - Natural
Convection (Still Air). Available from www.jedec.org.

136/146 DocID026289 Rev 4

STM32F411xC STM32F411xE Part numbering

8 Part numbering

Table 85. Ordering information scheme

Example: STM32 F 411 C E Y 6 TR

Device family
STM32 = ARM®-based 32-bit microcontroller

Product type
F = General-purpose

Device subfamily
411 = 411 family

Pin count
C = 48/49 pins
R = 64 pins
V = 100 pins

Flash memory size

C = 256 Kbytes of Flash memory
E = 512 Kbytes of Flash memory

Package
H = UFBGA
T = LQFP
U = UFQFPN
Y = WLCSP

Temperature range
6 = Industrial temperature range, –40 to 85 °C

Packing
TR = tape and reel
No character = tray or tube

DocID026289 Rev 4 137/146

138
Part numbering STM32F411xC STM32F411xE

Table 86. Device order codes

Reference Order codes

STM32F411CCY6, STM32F411RCT6, STM32F411VCT6, STM32F411CCU6,

STM32F411xC
STM32F411VCH6
STM32F411CEY6, STM32F411RET6, STM32F411VET6, STM32F411CEU6,
STM32F411xE
STM32F411VEH6

138/146 DocID026289 Rev 4

STM32F411xC STM32F411xE Recommendations when using the internal reset OFF

Appendix A Recommendations when using the internal

reset OFF

When the internal reset is OFF, the following integrated features are no longer supported:
• The integrated power-on-reset (POR)/power-down reset (PDR) circuitry is disabled.
• The brownout reset (BRO) circuitry must be disabled. By default BOR is OFF.
• The embedded programmable voltage detector (PVD) is disabled.
• VBAT functionality is no more available and VBAT pin should be connected to VDD.

A.1 Operating conditions

Table 87. Limitations depending on the operating power supply range
Maximum
Maximum
Flash memory
Flash memory
Operating access Possible
ADC access
power supply frequency I/O operation Flash memory
operation frequency
range with no wait operations
with no wait
state
states(1) (2)
(fFlashmax)

Conversion 8-bit erase and

VDD = 1.7 to 100 MHz with No I/O
time up to 20 MHz(4) program
2.1 V(3) 6 wait states compensation
1.2 Msps operations only
1. Applicable only when the code is executed from Flash memory. When the code is executed from RAM, no
wait state is required.
2. Thanks to the ART accelerator and the 128-bit Flash memory, the number of wait states given here does
not impact the execution speed from Flash memory since the ART accelerator allows to achieve a
performance equivalent to 0 wait state program execution.
3. VDD/VDDA minimum value of 1.7 V, with the use of an external power supply supervisor (refer to
Section 3.15.1: Internal reset ON).
4. Prefetch is not available. Refer to AN3430 application note for details on how to adjust performance and
power.

DocID026289 Rev 4 139/146

143
Application block diagrams STM32F411xC STM32F411xE

Appendix B Application block diagrams

B.1 USB OTG Full Speed (FS) interface solutions

Figure 61. USB controller configured as peripheral-only and used in Full-Speed mode

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1. The external voltage regulator is only needed when building a VBUS powered device.

Figure 62. USB controller configured as host-only and used in Full-Speed mode

9''

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1. The current limiter is required only if the application has to support a VBUS powered device. A basic power
switch can be used if 5V are available on the application board.

140/146 DocID026289 Rev 4

STM32F411xC STM32F411xE Application block diagrams

Figure 63. USB controller configured in dual mode and used in Full-Speed mode

9''
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1. The external voltage regulator is only needed when building a VBUS powered device.
2. The current limiter is required only if the application has to support a VBUS powered device. A basic power
switch can be used if 5 V are available on the application board.
3. The ID pin is required in dual role only.

B.2 Sensor Hub application example

Figure 64. Sensor Hub application example

DocID026289 Rev 4 141/146

143
Application block diagrams STM32F411xC STM32F411xE

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142/146 DocID026289 Rev 4

STM32F411xC STM32F411xE Application block diagrams

B.3 Batch Acquisition Mode (BAM) example

Data is transferred through the DMA from interfaces into the internal SRAM while the rest of
the MCU is set in low power mode.
• Code execution from RAM before switching off the Flash.
• Flash is set in power down and flash interface (ART™ accelerator) clock is stopped.
• The clocks are enabled only for the required interfaces.
• MCU core is set in sleep mode (core clock stopped waiting for interrupt).
• Only the needed DMA channels are enabled and running.

Figure 65. Batch Acquisition Mode (BAM) example

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DocID026289 Rev 4 143/146

143
Revision history STM32F411xC STM32F411xE

9 Revision history

Table 88. Document revision history

Date Revision Changes

19-Jun-2014 1 Initial release.

Introduced the BAM feature in Features, Section 2: Description., and
Section 3.3: Batch Acquisition mode (BAM).
Updated Section 3.5: Embedded Flash memory, Section 3.14: Power
supply schemes and Section 3.18: Low-power modes, Section 3.20.2:
General-purpose timers (TIMx) and Section 3.30: Temperature sensor.
Modified Table 8: STM32F411xC/xE pin definitions, Table 9: Alternate
function mapping and APB2 in Table 10: STM32F411xC/xE register
boundary addresses.
Modified Table 34: Low-power mode wakeup timings(1), Table 20:
Typical and maximum current consumption, code with data processing
10-Sep-2014 2 (ART accelerator disabled) running from SRAM - VDD = 1.7 V,
Table 21: Typical and maximum current consumption, code with data
processing (ART accelerator disabled) running from SRAM - VDD =
3.6 V, Table 25: Typical and maximum current consumption in run
mode, code with data processing (ART accelerator enabled with
prefetch) running from Flash memory - VDD = 3.6 V, Table 26: Typical
and maximum current consumption in Sleep mode - VDD = 3.6 V and
Table 58: I2C characteristics and Figure 33: I2C bus AC waveforms and
measurement circuit.
Added Figure 21: Low-power mode wakeup, Section Appendix A:
Recommendations when using the internal reset OFF and
Section Appendix B: Application block diagrams.

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STM32F411xC STM32F411xE Revision history

Table 88. Document revision history

Date Revision Changes

Changed datasheet status to Production Data.

Updated Table 31: Typical and maximum current consumptions in VBAT
mode.
Section : On-chip peripheral current consumption: changed HCLK
frequency and updated DMA1 and DMA2 current consumption in
Table 33: Peripheral current consumption.
Updated Table 55: I/O AC characteristics.
Updated THD in Table 69: ADC dynamic accuracy at fADC = 18 MHz -
limited test conditions and Table 70: ADC dynamic accuracy at fADC =
27-Nov-2014 3 36 MHz - limited test conditions.
Updated Table 55: I/O AC characteristics.
Updated Figure 46: WLCSP49 wafer level chip scale package outline
and Figure 48: Example of WLCSP49 marking (top view). Added
Figure 47: WLCSP49 0.4 mm pitch wafer level chip scale recommended
footprint and Table 80: WLCSP49 recommended PCB design rules
(0.4 mm pitch).
Updated Figure 51: Example of UFQFPN48 marking (top view),
Figure 54: Example of LQFP64 marking (top view), Figure 57: Example
of LQPF100 marking (top view), and Figure 58: UFBGA100, 7 x 7 mm,
0.50 mm pitch, ultra fine pitch ball grid array package outline.
Added VPP alternate function for BOOT0 in Table 8: STM32F411xC/xE
pin definitions.
Added TC inputs in Table 11: Voltage characteristics, Table 12: Current
characteristics, Table 14: General operating conditions, Table 53: I/O
04-Feb-2015 4 static characteristics and Figure 30: FT/TC I/O input characteristics.
Updated VESD(CDM) in Table 50: ESD absolute maximum ratings.
A3 minimum and maximum values removed in Table 84: UFBGA100, 7
x 7 mm, 0.50 mm pitch, ultra fine pitch ball grid array package
mechanical data.

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