STM32G484xE

Arm® Cortex®-M4 32-bit MCU+FPU, 170 MHz / 213DMIPS, 128 KB

SRAM, rich analog, math acc, 184 ps 12 chan Hi-res timer, AES
Datasheet - production data

Features
Includes ST state-of-the-art patented technology
• Core: Arm® 32-bit Cortex®-M4 CPU with FPU,
Adaptive real-time accelerator (ART LQFP48 (7 x 7 mm) UFQFPN48 WLCSP81
LQFP64 (10 x 10 mm) (4.02 x 4.27 mm)
Accelerator) allowing 0-wait-state execution (7 x 7 mm)
LQFP80 (12 x 12 mm)
from Flash memory, frequency up to 170 MHz LQFP100 (14 x 14 mm)
with 213 DMIPS, MPU, DSP instructions LQFP128 (14 x 14 mm)

• Operating conditions:
UFBGA121 TFBGA100
– VDD, VDDA voltage range: (6 x 6 mm) (8 x 8 mm)
1.71 V to 3.6 V
• Clock management
• Mathematical hardware accelerators
– 4 to 48 MHz crystal oscillator
– CORDIC for trigonometric functions
acceleration – 32 kHz oscillator with calibration
– FMAC: filter mathematical accelerator – Internal 16 MHz RC with PLL option (± 1%)
– Internal 32 kHz RC oscillator (± 5%)
• Memories
– 512 Kbytes of Flash memory with ECC • Up to 107 fast I/Os
support, two banks read-while-write, – All mappable on external interrupt vectors
proprietary code readout protection – Several I/Os with 5 V tolerant capability
(PCROP), securable memory area, 1 Kbyte • Interconnect matrix
OTP
• 16-channel DMA controller
– 96 Kbytes of SRAM, with hardware parity
check implemented on the first 32 Kbytes • 5 x 12-bit ADCs 0.25 µs, up to 42 channels.
– Routine booster: 32 Kbytes of SRAM on Resolution up to 16-bit with hardware
instruction and data bus, with hardware oversampling, 0 to 3.6 V conversion range
parity check (CCM SRAM) • 7 x 12-bit DAC channels
– External memory interface for static – 3 x buffered external channels 1 MSPS
memories FSMC supporting SRAM, – 4 x unbuffered internal channels 15 MSPS
PSRAM, NOR and NAND memories
• 7 x ultra-fast rail-to-rail analog comparators
– Quad-SPI memory interface
• 6 x operational amplifiers that can be used in
• Reset and supply management PGA mode, all terminals accessible
– Power-on/power-down reset
• Internal voltage reference buffer (VREFBUF)
(POR/PDR/BOR)
supporting three output voltages (2.048 V,
– Programmable voltage detector (PVD) 2.5 V, 2.9 V)
– Low-power modes: sleep, stop, standby
• 17 timers:
and shutdown
– HRTIM (Hi-Resolution and complex
– VBAT supply for RTC and backup registers
waveform builder): 6 x16-bit counters,
184 ps resolution, 12 PWM

March 2023 DS12983 Rev 5 1/235

This is information on a product in full production. www.st.com
 STM32G484xE

– 2 x 32-bit timer and 2 x 16-bit timers with – 5 x USART/UARTs (ISO 7816 interface,
up to four IC/OC/PWM or pulse counter LIN, IrDA, modem control)
and quadrature (incremental) encoder input – 1 x LPUART
– 3 x 16-bit 8-channel advanced motor – 4 x SPIs, 4 to 16 programmable bit frames,
control timers, with up to 8 x PWM 2 x with multiplexed half duplex I2S
channels, dead time generation and interface
emergency stop – 1 x SAI (serial audio interface)
– 1 x 16-bit timer with 2 x IC/OCs, one – USB 2.0 full-speed interface with LPM and
OCN/PWM, dead time generation and BCD support
emergency stop
– IRTIM (infrared interface)
– 2 x 16-bit timers with IC/OC/OCN/PWM,
– USB Type-C™ /USB power delivery
dead time generation and emergency stop
controller (UCPD)
– 2 x watchdog timers (independent, window)
• True random number generator (RNG)
– 1 x SysTick timer: 24-bit downcounter
– 2 x 16-bit basic timers • CRC calculation unit, 96-bit unique ID
– 1 x low-power timer • AES: 128/256-bit key encryption hardware
accelerator
• Calendar RTC with alarm, periodic wakeup
from stop/standby • Development support: serial wire debug
(SWD), JTAG, Embedded Trace Macrocell™
• Communication interfaces
– 3 x FDCAN controller supporting flexible
data rate
– 4 x I2C Fast mode plus (1 Mbit/s) with
20 mA current sink, SMBus/PMBus,
wakeup from stop
Table 1. Device summary
Reference Part number

STM32G484CE, STM32G484ME, STM32G484PE,

STM32G484xE
STM32G484RE, STM32G484QE, STM32G484VE

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Contents

1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

2 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

3 Functional overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
3.1 Arm® Cortex®-M4 core with FPU . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
3.2 Adaptive real-time memory accelerator (ART accelerator) . . . . . . . . . . . 18
3.3 Memory protection unit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
3.4 Embedded flash memory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
3.5 Embedded SRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
3.6 Multi-AHB bus matrix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
3.7 Boot modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
3.8 CORDIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
3.9 Filter mathematical accelerator (FMAC) . . . . . . . . . . . . . . . . . . . . . . . . . . 21
3.10 Cyclic redundancy check calculation unit (CRC) . . . . . . . . . . . . . . . . . . . 22
3.11 Power supply management . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
3.11.1 Power supply schemes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
3.11.2 Power supply supervisor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
3.11.3 Voltage regulator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
3.11.4 Low-power modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
3.11.5 Reset mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
3.11.6 VBAT operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
3.12 Interconnect matrix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
3.13 Clocks and startup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
3.14 General-purpose inputs/outputs (GPIOs) . . . . . . . . . . . . . . . . . . . . . . . . . 29
3.15 Direct memory access controller (DMA) . . . . . . . . . . . . . . . . . . . . . . . . . . 29
3.16 DMA request router (DMAMUX) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
3.17 Interrupts and events . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
3.17.1 Nested vectored interrupt controller (NVIC) . . . . . . . . . . . . . . . . . . . . . . 30
3.17.2 Extended interrupt/event controller (EXTI) . . . . . . . . . . . . . . . . . . . . . . 30
3.18 Analog-to-digital converter (ADC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
3.18.1 Temperature sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31

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3.18.2 Internal voltage reference (VREFINT) . . . . . . . . . . . . . . . . . . . . . . . . . . 32

3.18.3 VBAT battery voltage monitoring . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
3.18.4 Operational amplifier internal output (OPAMPxINT): . . . . . . . . . . . . . . . 32
3.19 Digital to analog converter (DAC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
3.20 Voltage reference buffer (VREFBUF) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
3.21 Comparators (COMP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
3.22 Operational amplifier (OPAMP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
3.23 Random number generator (RNG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
3.24 Advanced encryption standard hardware accelerator (AES) . . . . . . . . . . 34
3.25 Timers and watchdogs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
3.25.1 High-resolution timer (HRTIM) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
3.25.2 Advanced motor control timer (TIM1, TIM8, TIM20) . . . . . . . . . . . . . . . 36
3.25.3 General-purpose timers (TIM2, TIM3, TIM4, TIM5, TIM15, TIM16,
TIM17) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
3.25.4 Basic timers (TIM6 and TIM7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
3.25.5 Low-power timer (LPTIM1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
3.25.6 Independent watchdog (IWDG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
3.25.7 System window watchdog (WWDG) . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
3.25.8 SysTick timer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
3.26 Real-time clock (RTC) and backup registers . . . . . . . . . . . . . . . . . . . . . . 39
3.27 Tamper and backup registers (TAMP) . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
3.28 Infrared transmitter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
3.29 Inter-integrated circuit interface (I2C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
3.30 Universal synchronous/asynchronous receiver transmitter (USART) . . . 42
3.31 Low-power universal asynchronous receiver transmitter (LPUART) . . . . 43
3.32 Serial peripheral interface (SPI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
3.33 Serial audio interfaces (SAI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
3.34 Controller area network (FDCAN1, FDCAN2, FDCAN3) . . . . . . . . . . . . . 45
3.35 Universal serial bus (USB) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
3.36 USB Type-C™ / USB Power Delivery controller (UCPD) . . . . . . . . . . . . . 45
3.37 Clock recovery system (CRS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
3.38 Flexible static memory controller (FSMC) . . . . . . . . . . . . . . . . . . . . . . . . 46
3.39 Quad-SPI memory interface (QUADSPI) . . . . . . . . . . . . . . . . . . . . . . . . . 47
3.40 Development support . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
3.40.1 Serial wire JTAG debug port (SWJ-DP) . . . . . . . . . . . . . . . . . . . . . . . . . 48

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3.40.2 Embedded trace macrocell™ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48

4 Pinouts and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49

4.1 UFQFPN48 pinout description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
4.2 LQFP48 pinout description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
4.3 LQFP64 pinout description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
4.4 LQFP80 pinout description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
4.5 LQFP100 pinout description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
4.6 LQFP128 pinout description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
4.7 WLCSP81 pinout description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
4.8 TFBGA100 pinout description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
4.9 UFBGA121 pinout description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55
4.10 Pin definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
4.11 Alternate functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73

5 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80
5.1 Parameter conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80
5.1.1 Minimum and maximum values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80
5.1.2 Typical values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80
5.1.3 Typical curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80
5.1.4 Loading capacitor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80
5.1.5 Pin input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80
5.1.6 Power supply scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81
5.1.7 Current consumption measurement . . . . . . . . . . . . . . . . . . . . . . . . . . . 82
5.2 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82
5.3 Operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 84
5.3.1 General operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 84
5.3.2 Operating conditions at power-up / power-down . . . . . . . . . . . . . . . . . . 85
5.3.3 Embedded reset and power control block characteristics . . . . . . . . . . . 85
5.3.4 Embedded voltage reference . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 87
5.3.5 Supply current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88
5.3.6 Wakeup time from low-power modes and voltage scaling
transition times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114
5.3.7 External clock source characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 115
5.3.8 Internal clock source characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 120
5.3.9 PLL characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 123

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5.3.10 Flash memory characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 124

5.3.11 EMC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125
5.3.12 Electrical sensitivity characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 126
5.3.13 I/O current injection characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 127
5.3.14 I/O port characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128
5.3.15 NRST pin characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 133
5.3.16 High-resolution timer (HRTIM) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 134
5.3.17 Extended interrupt and event controller input (EXTI) characteristics . . 136
5.3.18 Analog switches booster . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 137
5.3.19 Analog-to-digital converter characteristics . . . . . . . . . . . . . . . . . . . . . . 138
5.3.20 Digital-to-Analog converter characteristics . . . . . . . . . . . . . . . . . . . . . 153
5.3.21 Voltage reference buffer characteristics . . . . . . . . . . . . . . . . . . . . . . . 160
5.3.22 Comparator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 163
5.3.23 Operational amplifiers characteristics . . . . . . . . . . . . . . . . . . . . . . . . . 164
5.3.24 Temperature sensor characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 168
5.3.25 VBAT monitoring characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 168
5.3.26 Timer characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 169
5.3.27 Communication interfaces characteristics . . . . . . . . . . . . . . . . . . . . . . 170
5.3.28 FSMC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180
5.3.29 QUADSPI characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 197
5.3.30 UCPD characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 199

6 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200

6.1 WLCSP81 package information (B068) . . . . . . . . . . . . . . . . . . . . . . . . . 200
6.2 UFQFPN48 package information (A0B9) . . . . . . . . . . . . . . . . . . . . . . . . 203
6.3 LQFP48 package information (5B) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 205
6.4 LQFP64 package information (5W) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 208
6.5 LQFP80 package information (9X) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 210
6.6 TFBGA100 package information (A08Q) . . . . . . . . . . . . . . . . . . . . . . . . 213
6.7 LQFP100 package information (1L) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 216
6.8 LQFP128 package information (TC) . . . . . . . . . . . . . . . . . . . . . . . . . . . 219
6.9 UFBGA121 package information (B0CU) . . . . . . . . . . . . . . . . . . . . . . . . 223
6.10 Device marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 226
6.11 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 227
6.11.1 Reference document . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 228
6.11.2 Selecting the product temperature range . . . . . . . . . . . . . . . . . . . . . . 229

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7 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 231

8 Important security notice . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 232

9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 233

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List of tables STM32G484xE

List of tables

Table 1. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Table 2. STM32G484xE features and peripheral counts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Table 3. STM32G484xE peripherals interconnect matrix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Table 4. DMA implementation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Table 5. Temperature sensor calibration values. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Table 6. Internal voltage reference calibration values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Table 7. Timer feature comparison . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Table 8. I2C implementation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Table 9. USART/UART/LPUART features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Table 10. SAI features implementation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Table 11. Legend/abbreviations used in the pinout table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
Table 12. STM32G484xE pin definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
Table 13. Alternate function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73
Table 14. Voltage characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82
Table 15. Current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83
Table 16. Thermal characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83
Table 17. General operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 84
Table 18. Operating conditions at power-up / power-down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85
Table 19. Embedded reset and power control block characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 85
Table 20. Embedded internal voltage reference . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 87
Table 21. Current consumption in Run and Low-power run modes, code with data
processing running from flash in single Bank, ART enable (Cache ON Prefetch OFF) . . . 89
Table 22. Current consumption in Run and Low-power run modes, code with data
processing running from flash in dual bank, ART enable (Cache ON Prefetch OFF). . . . . 91
Table 23. Current consumption in Run and Low-power run modes,
code with data processing running from SRAM1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93
Table 24. Typical current consumption in Run and Low-power run modes, with different codes
running from flash memory, ART enable (Cache ON Prefetch OFF) . . . . . . . . . . . . . . . . . 95
Table 25. Typical current consumption in Run and Low-power run modes, with different codes
running from SRAM1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97
Table 26. Typical current consumption in Run and Low-power run modes, with different codes
running from SRAM2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98
Table 27. Typical current consumption in Run and Low-power run modes, with different codes
running from CCMSRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99
Table 28. Current consumption in Sleep and Low-power sleep mode flash memory ON . . . . . . . . 100
Table 29. Current consumption in low-power sleep modes, flash memory in power-down . . . . . . . 101
Table 30. Current consumption in Stop 1 mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 102
Table 31. Current consumption in Stop 0 mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103
Table 32. Current consumption in Standby mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103
Table 33. Current consumption in Shutdown mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105
Table 34. Current consumption in VBAT mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 107
Table 35. Peripheral current consumption . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 109
Table 36. Low-power mode wakeup timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114
Table 37. Regulator modes transition times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115
Table 38. Wakeup time using USART/LPUART . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115
Table 39. High-speed external user clock characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115
Table 40. Low-speed external user clock characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116
Table 41. HSE oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117

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Table 42. LSE oscillator characteristics (fLSE = 32.768 kHz) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119

Table 43. HSI16 oscillator characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120
Table 44. HSI48 oscillator characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121
Table 45. LSI oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 122
Table 46. PLL characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 123
Table 47. Flash memory characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 124
Table 48. Flash memory endurance and data retention . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 124
Table 49. EMS characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125
Table 50. EMI characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126
Table 51. ESD absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126
Table 52. Electrical sensitivities . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 127
Table 53. I/O current injection susceptibility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 127
Table 54. I/O static characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128
Table 55. Output voltage characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130
Table 56. I/O (except FT_c) AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 131
Table 57. I/O FT_c AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 132
Table 58. NRST pin characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 133
Table 59. HRTIM characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 134
Table 60. HRTIM output response to fault protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 135
Table 61. HRTIM output response to external events 1 to 5
(Low-Latency mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 135
Table 62. HRTIM output response to external events 1 to 10 (Synchronous mode ) . . . . . . . . . . . . 136
Table 63. HRTIM synchronization input / output. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 136
Table 64. EXTI input characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 136
Table 65. Analog switches booster characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 137
Table 66. ADC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 138
Table 67. Maximum ADC RAIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 141
Table 68. ADC accuracy - limited test conditions 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 143
Table 69. ADC accuracy - limited test conditions 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 145
Table 70. ADC accuracy - limited test conditions 3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 147
Table 71. ADC accuracy (Multiple ADCs operation) - limited test conditions 1 . . . . . . . . . . . . . . . . 149
Table 72. ADC accuracy (Multiple ADCs operation) - limited test conditions 2 . . . . . . . . . . . . . . . . 150
Table 73. ADC accuracy (Multiple ADCs operation) - limited test conditions 3 . . . . . . . . . . . . . . . . 151
Table 74. DAC 1MSPS characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 153
Table 75. DAC 1MSPS accuracy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 156
Table 76. DAC 15MSPS characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 157
Table 77. DAC 15MSPS accuracy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 159
Table 78. VREFBUF characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160
Table 79. COMP characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 163
Table 80. OPAMP characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 164
Table 81. TS characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 168
Table 82. VBAT monitoring characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 168
Table 83. VBAT charging characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 168
Table 84. TIMx characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 169
Table 85. IWDG min/max timeout period at 32 kHz (LSI). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 170
Table 86. WWDG min/max timeout value at 170 MHz (PCLK). . . . . . . . . . . . . . . . . . . . . . . . . . . . . 170
Table 87. Minimum I2CCLK frequency in all I2C modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 171
Table 88. I2C analog filter characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 171
Table 89. SPI characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 172
Table 90. I2S characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175
Table 91. SAI characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 177
Table 92. USB electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 179

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List of tables STM32G484xE

Table 93. USART electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 179

Table 94. Asynchronous non-multiplexed SRAM/PSRAM/NOR read timings . . . . . . . . . . . . . . . . . 182
Table 95. Asynchronous non-multiplexed SRAM/PSRAM/NOR read-NWAIT timings . . . . . . . . . . . 182
Table 96. Asynchronous non-multiplexed SRAM/PSRAM/NOR write timings . . . . . . . . . . . . . . . . . 183
Table 97. Asynchronous non-multiplexed SRAM/PSRAM/NOR write-NWAIT timings. . . . . . . . . . . 184
Table 98. Asynchronous multiplexed PSRAM/NOR read timings. . . . . . . . . . . . . . . . . . . . . . . . . . . 185
Table 99. Asynchronous multiplexed PSRAM/NOR read-NWAIT timings . . . . . . . . . . . . . . . . . . . . 185
Table 100. Asynchronous multiplexed PSRAM/NOR write timings . . . . . . . . . . . . . . . . . . . . . . . . . . 187
Table 101. Asynchronous multiplexed PSRAM/NOR write-NWAIT timings . . . . . . . . . . . . . . . . . . . . 187
Table 102. Synchronous multiplexed NOR/PSRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . . . . 189
Table 103. Synchronous multiplexed PSRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 191
Table 104. Synchronous non-multiplexed NOR/PSRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . 192
Table 105. Synchronous non-multiplexed PSRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . 194
Table 106. Switching characteristics for NAND flash memory read cycles . . . . . . . . . . . . . . . . . . . . 196
Table 107. Switching characteristics for NAND flash memory write cycles . . . . . . . . . . . . . . . . . . . . 196
Table 108. Quad SPI characteristics in SDR mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 197
Table 109. QUADSPI characteristics in DDR mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 197
Table 110. UCPD characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 199
Table 111. WLCSP81 - Mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 201
Table 112. WLCSP81 - Example of PCB design rules . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 202
Table 113. UFQFPN48 - Mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 204
Table 114. LQFP48 - Mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 206
Table 115. LQFP64 - Mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 208
Table 116. LQFP80 - Mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 211
Table 117. TFBGA100 - Mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 214
Table 118. TFBGA100 - Example of PCB design rules . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 214
Table 119. LQFP100 - Mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 217
Table 120. LQFP128 - Mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 220
Table 121. UFBGA121 - Mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 224
Table 122. Package thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 227
Table 123. Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 231
Table 124. Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 233

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STM32G484xE List of figures

List of figures

Figure 1. STM32G484xE block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

Figure 2. Multi-AHB bus matrix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Figure 3. Voltage reference buffer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Figure 4. Infrared transmitter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Figure 5. STM32G484xE UFQFPN48 pinout. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
Figure 6. STM32G484xE LQFP48 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
Figure 7. STM32G484xE LQFP64 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
Figure 8. STM32G484xE LQFP80 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
Figure 9. STM32G484xE LQFP100 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
Figure 10. STM32G484xE LQFP128 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
Figure 11. STM32G484xE WLCSP81 pinout. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
Figure 12. STM32G484xE TFBGA100 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
Figure 13. STM32G484xE UFBGA121 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55
Figure 14. Pin loading conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80
Figure 15. Pin input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80
Figure 16. Power supply scheme. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81
Figure 17. Current consumption measurement . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82
Figure 18. VREFINT versus temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88
Figure 19. High-speed external clock source AC timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . 116
Figure 20. Low-speed external clock source AC timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116
Figure 21. Typical application with an 8 MHz crystal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118
Figure 22. Typical application with a 32.768 kHz crystal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119
Figure 23. HSI16 frequency versus temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121
Figure 24. HSI48 frequency versus temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 122
Figure 25. I/O input characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129
Figure 26. I/O AC characteristics definition(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 133
Figure 27. Recommended NRST pin protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 134
Figure 28. ADC accuracy characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152
Figure 29. Typical connection diagram when using the ADC with FT/TT pins
featuring analog switch function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152
Figure 30. 12-bit buffered / non-buffered DAC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 155
Figure 31. VREFOUT_TEMP in case VRS = 00 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 161
Figure 32. VREFOUT_TEMP in case VRS = 01 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 162
Figure 33. VREFOUT_TEMP in case VRS = 10 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 162
Figure 34. OPAMP noise density @ 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 167
Figure 35. SPI timing diagram - slave mode and CPHA = 0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 173
Figure 36. SPI timing diagram - slave mode and CPHA = 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174
Figure 37. SPI timing diagram - master mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174
Figure 38. SAI master timing waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 178
Figure 39. SAI slave timing waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 178
Figure 40. Asynchronous non-multiplexed SRAM/PSRAM/NOR read waveforms . . . . . . . . . . . . . . 181
Figure 41. Asynchronous non-multiplexed SRAM/PSRAM/NOR write waveforms . . . . . . . . . . . . . . 183
Figure 42. Asynchronous multiplexed PSRAM/NOR read waveforms. . . . . . . . . . . . . . . . . . . . . . . . 184
Figure 43. Asynchronous multiplexed PSRAM/NOR write waveforms . . . . . . . . . . . . . . . . . . . . . . . 186
Figure 44. Synchronous multiplexed NOR/PSRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . . . . 188
Figure 45. Synchronous multiplexed PSRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 190
Figure 46. Synchronous non-multiplexed NOR/PSRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . 192
Figure 47. Synchronous non-multiplexed PSRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . 193

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List of figures STM32G484xE

Figure 48. NAND controller waveforms for read access . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 195

Figure 49. NAND controller waveforms for write access . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 195
Figure 50. NAND controller waveforms for common memory read access . . . . . . . . . . . . . . . . . . . . 195
Figure 51. NAND controller waveforms for common memory write access. . . . . . . . . . . . . . . . . . . . 196
Figure 52. Quad SPI timing diagram - SDR mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 198
Figure 53. Quad SPI timing diagram - DDR mode. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 199
Figure 54. WLCSP81 - Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200
Figure 55. WLCSP81 - Footprint example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 201
Figure 56. UFQFPN48 - Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 203
Figure 57. UFQFPN48 - Footprint example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 204
Figure 58. LQFP48 - Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 205
Figure 59. LQFP48 - Footprint example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 207
Figure 60. LQFP64 - Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 208
Figure 61. LQFP64 - Footprint example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 209
Figure 62. LQFP80 - Outline(15) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 210
Figure 63. LQFP80 - Footprint example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 212
Figure 64. TFBGA100 - Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 213
Figure 65. TFBGA100 - Footprint example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 214
Figure 66. LQFP100 - Outline(15) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 216
Figure 67. LQFP100 - Footprint example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 218
Figure 68. LQFP128 - Outline(15) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 219
Figure 69. LQFP128 - Footprint example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 222
Figure 70. UFBGA121 - Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 223
Figure 71. UFBGA121 - Footprint example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 225
Figure 72. WLCSP81 marking example (package top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 226

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1 Introduction

This datasheet provides the ordering information and mechanical device characteristics of
the STM32G484xE microcontrollers.
This document should be read in conjunction with the reference manual RM0440
“STM32G4 Series advanced Arm® 32-bit MCUs”. The reference manual is available from
the STMicroelectronics website www.st.com.
For information on the Arm®(a) Cortex®-M4 core, refer to the Cortex®-M4 technical
reference manual, available from the www.arm.com website.

a. Arm is a registered trademark of Arm Limited (or its subsidiaries) in the US and/or elsewhere.

DS12983 Rev 5 13/235

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Description STM32G484xE

2 Description

The STM32G484xE devices are based on the high-performance Arm® Cortex®-M4 32-bit
RISC core. They operate at a frequency of up to 170 MHz.
The Cortex-M4 core features a single-precision floating-point unit (FPU), which supports all
the Arm single-precision data-processing instructions and all the data types. It also
implements a full set of DSP (digital signal processing) instructions and a memory protection
unit (MPU) which enhances the application’s security.
These devices embed high-speed memories (up to 512 Kbytes of flash memory, and
128 Kbytes of SRAM), a flexible external memory controller (FSMC) for static memories (for
devices with packages of 100 pins and more), a Quad-SPI flash memory interface, and an
extensive range of enhanced I/Os and peripherals connected to two APB buses, two AHB
buses and a 32-bit multi-AHB bus matrix.
The devices also embed several protection mechanisms for embedded flash memory and
SRAM: readout protection, write protection, securable memory area and proprietary code
readout protection.
The devices embed peripherals allowing mathematical/arithmetic function acceleration
(CORDIC for trigonometric functions and FMAC unit for filter functions).
They offer five fast 12-bit ADCs (4 Msps), seven comparators, six operational amplifiers,
seven DAC channels (3 external and 4 internal), an internal voltage reference buffer, a low-
power RTC, twothree general-purpose 32-bit timers, three 16-bit PWM timers dedicated to
motor control, seven general-purpose 16-bit timers, and one 16-bit low-power timer, and
high resolution timer with 184 ps resolution.
They also feature standard and advanced communication interfaces such as:
- Four I2Cs
- Four SPIs multiplexed with two half duplex I2Ss
- Three USARTs, two UARTs and one low-power UART.
- Three FDCANs
- One SAI
- USB device
- UCPD
The STM32G484xE devices embed an AES.
The devices operate in the -40 to +85 °C (+105 °C junction) and -40 to +125 °C (+130 °C
junction) temperature ranges from a 1.71 to 3.6 V power supply. A comprehensive set of
power-saving modes allows the design of low-power applications.
Some independent power supplies are supported including an analog independent supply
input for ADC, DAC, OPAMPs and comparators. A VBAT input allows backup of the RTC and
the registers.
The STM32G484xE family offers 8 packages from 48-pin to 128-pin.

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Table 2. STM32G484xE features and peripheral counts

STM32G484ME

STM32G484QE
STM32G484CE

STM32G484RE

STM32G484VE

STM32G484PE
Peripheral

Flash memory 512 KB

SRAM 128 (80 + 16+ 32) KB
External memory controller
No Yes Yes(1) Yes(2) Yes
for static memories (FSMC)
QUADSPI 1
Advanced motor
3 (16-bit)
control
HRTIM 1
General 5 (16-bit)
purpose 2 (32-bit)
Basic 2 (16-bit)
Timers
Low power 1 (16-bit)
SysTick timer 1
Watchdog
timers
2
(independent,
window)
SPI(I2S)(3) 3 (2) 4 (2)
I2C 4
USART 3
0 in LQFP48/
UART 2
1 in UFQFPN48
Comm.
interfaces LPUART 1
FDCANs 3
USB device Yes
UCPD Yes
SAI Yes
RTC Yes
Tamper pins 2 3
Random number generator Yes
AES Yes

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Description STM32G484xE

Table 2. STM32G484xE features and peripheral counts (continued)

STM32G484ME

STM32G484QE
STM32G484CE

STM32G484RE

STM32G484VE

STM32G484PE
Peripheral

CORDIC Yes
FMAC Yes

GPIOs 67 in
38 in LQFP48 52 86 102 107
WLCSP81
42 in UFQFPN48
66 in LQFP80
Wakeup pins 3 4 5 5 5
4
5
12-bit ADCs 42 in
Number of channels 20 in LQFP48
26 WLCSP81 42 42 42
21 in UFQFPN48
41 in LQFP80
12-bit DAC 4
Number of channels 7 (3 external + 4 internal)
Internal voltage reference
Yes
buffer
Analog comparator 7
Operational amplifiers 6
Max. CPU frequency 170 MHz
Operating voltage 1.71 V to 3.6 V
Operating temperature Ambient operating temperature: -40 to 85 °C / -40 to 125 °C
LQFP48/ WLCSP81 LQFP100/
Packages LQFP64 UFBGA121 LQFP128
UFQFPN48 LQFP80 TFBGA100
1. For the LQFP100 package, only FMC bank1 and NAND bank are available. Bank1 can only support a multiplexed
NOR/PSRAM memory using the NE1 chip select.
2. For the UFBGA121 package, only FMC bank1/bank4 and NAND bank are available. Bank1/Bank4 can only support a
multiplexed NOR/PSRAM memory using the NE1/NE4 chip select.
3. The SPI2/3 interfaces can work in an exclusive way in either the SPI mode or the I2S audio mode.

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Figure 1. STM32G484xE block diagram

CLK, E(3:0), A(23:0)
JTRST, JTDI,
JTCK/SWCLK FSMC D(31:0), OEN, WEN,
JTAG & SW MPU BL(3:0), L, WAIT/IORDY,
JTDO/SWD, JTDO
ETM NVIC IORD, IOWD,IS16 as AF
TRACECK
FPU QUADSPI
TRACED(3:0) CLK, NCS, BK1_IO[3:0]
ARM® D-BUS

AHB BUS-MATRIX 5M / 9S
CORTEX-M4

ACCEL/
CACHE
170MHz I-BUS FLASH 2 x 256 KB
S-BUS @VDDA

CCM SRAM 32 KB CH1

GP-DMA2 8 Chan DAC1 OUT1/OUT2
CH2

8 Chan SRAM2 16 KB
GP-DMA1
DAC2 CH1 OUT1
SRAM1 80 KB
DMAMUX CH1
DAC3
AHB2 CH2

RNG CH1
@VDDA DAC4
CH2
SAR ADC1 RNB1
IF analog
Ain ADC SAR ADC2
CORDIC POWER MNGT
SAR ADC3 VDD = 1.71 to 3.6V
VDD12 VOLT. REG.
3.3V TO 1.2V VSS
SAR ADC4 IF FMAC
AHB1

SAR ADC5
@VDD
@VDD SUPPLY
PA(15:0) SUPERVISION
USART
GPIO2MBps
PORT A LSI POR POR / BOR
PB(15:0) USART
GPIO2MBps
PORT B PLL Reset
HSI Int PVD, PWM VDD, VSS,
PC(15:0) USART
GPIO2MBps
PORT C VDDA, VSSA,
HSI48
PD(15:0) USART RESET
GPIO2MBps
PORT D
PE(15:0) USART
GPIO2MBps
PORT E
XTAL OSC OSC_IN
PF(15:0) USART
GPIO2MBps
PORT F 4-48MHz OSC_OUT
PG(10:0) USART
GPIO2MBps
PORT G RESET& IWDG
FS, SCK, SD, CLOCKCTRL Standby Interface
SAI1 VBAT = 1.55 to 3.6V
MCLK as AF
@VBAT
6 Fault inputs as AF OSC32_IN
10 ext. event inputs peripheralclocks XTAL 32kHz
16b PWM and system OSC_OUT
1 synchro. input HRTimer
1 synchro. Output RTC AWU
RTC_OUT
12 PWM outputs BKPREG
RTC_TS
CRC RTC_TAMPx
107 AF EXT IT.
USART WKUP
2MBps RTC Interface

4 PWM,4PWM, 16b PWM

ETR,BKIN as F TIMER1 AHB/APB2 AHB/APB1
4 PWM,4PWM, 16b PWM TIMER2&5 4 CH, ETR as AF
ETR,BKIN as F TIMER8
16b TIMER3&4 4 CH, ETR as AF
CH as AF TIMER15
USART 2MBps

CH as AF TIMER16
USART 2MBps 16b PWRCTRL
LP_UART1 RX, TX as AF
APB2

CH as AF16b 16b WinWATCHDOG

TIMER17
USART 2MBps
4 PWM,4PWM, I2C1&2&3&4 SCL, SDA, SMBAL as AF
TIMER20 16b PWM LP timer1
ETR,BKIN as F
Smcard RX, TX, SCK,
APB2 60MHzAPB1

RX, TX, SCK,CTS, USART2&3

TIMER6 16b trigg irDA CTS, RTS as AF
RTS as AF USART
USART 2MBps1
RX, TX, CTS,
MOSI, MISO 16b trigg UART4&5
TIMER7 irDA RTS as AF
SCK, NSS as AF USART SPI 1
2MBps
I2S half MOSI, MISO, SCK
SPI2&3
MOSI, MISO CRS duplex NSS, as AF
SCK, NSS as AF SPI 4
FIFO

CAN1 & 2 & 3 RX,TX as AF

SysCfg
PHY

@VDDA UCPD
FIFO

PHY

USB D+
COMP OPAMP
Vref_Buf Device D-
1,2,3,4,5,6,7 1,2,3,4,5,6

CC1
CC2
MSv42693V4

1. AF: alternate function on I/O pins.

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Functional overview STM32G484xE

3 Functional overview

3.1 Arm® Cortex®-M4 core with FPU

The Arm® Cortex®-M4 with FPU processor is the latest generation of Arm processors for
embedded systems. It was developed to provide a low-cost platform that meets the needs of
the MCU implementation, with a reduced pin count and with low-power consumption, while
delivering outstanding computational performance and an advanced response to interrupts.
The Arm® Cortex®-M4 with FPU 32-bit RISC processor features an exceptional code-
efficiency, delivering the expected high-performance from an Arm core in a memory size
usually associated with 8-bit and 16-bit devices.
The processor supports a set of DSP instructions which allows an efficient signal processing
and a complex algorithm execution. Its single precision FPU speeds up the software
development by using metalanguage development tools to avoid saturation.
With its embedded Arm core, the STM32G484xE family is compatible with all Arm tools and
software.
Figure 1 shows the general block diagram of the STM32G484xE devices.

3.2 Adaptive real-time memory accelerator (ART accelerator)

The ART accelerator is a memory accelerator that is optimized for the STM32 industry-
standard Arm® Cortex®-M4 processors. It balances the inherent performance advantage of
the Arm® Cortex®-M4 over flash memory technologies, which normally requires the
processor to wait for the flash memory at higher frequencies.

3.3 Memory protection unit

The memory protection unit (MPU) is used to manage the CPU accesses to the memory
and to prevent one task to accidentally corrupt the memory or the resources used by any
other active task. This memory area is organized into up to 8 protected areas, which can be
divided in up into 8 subareas each. The protection area sizes range between 32 bytes and
the whole 4 gigabytes of addressable memory.
The MPU is especially helpful for applications where some critical or certified code has to be
protected against the misbehavior of other tasks. It is usually managed by an RTOS (real-
time operating system). If a program accesses a memory location that is prohibited by the
MPU, the RTOS can detect it and take action. In an RTOS environment, the kernel can
dynamically update the MPU area setting based on the process to be executed.
The MPU is optional and can be bypassed for applications that do not need it.

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3.4 Embedded flash memory

The STM32G484xE devices feature up to 512 Kbytes of embedded flash memory, which is
available for storing programs and data.
The flash memory interface features:
– Single or dual bank operating modes
– Read-while-write (RWW) in dual bank mode
This feature allows to perform a read operation from one bank while an erase or program
operation is performed to the other bank. The dual bank boot is also supported.
Flexible protections can be configured thanks to the option bytes:
• Readout protection (RDP) to protect the whole memory. Three levels of protection are
available:
– Level 0: no readout protection
– Level 1: memory readout protection; the flash memory cannot be read from or written
to if either the debug features are connected or the boot in RAM or bootloader are
selected
– Level 2: chip readout protection; the debug features (Cortex-M4 JTAG and serial
wire), the boot in RAM and the bootloader selection are disabled (JTAG fuse). This
selection is irreversible.
• Write protection (WRP): the protected area is protected against erasing and
programming.
• Proprietary code readout protection (PCROP): a part of the flash memory can be
protected against read and write from third parties. The protected area is execute-only
and it can only be reached by the STM32 CPU as an instruction code, while all other
accesses (DMA, debug and CPU data read, write and erase) are strictly prohibited. An
additional option bit (PCROP_RDP) allows to select if the PCROP area is erased or not
when the RDP protection is changed from Level 1 to Level 0.
• Securable memory area: a part of flash memory can be configured by option bytes to
be securable. After reset this securable memory area is not secured and it behaves like
the remainder of main flash memory (execute, read, write access). When secured, any
access to this securable memory area generates corresponding read/write error.
Purpose of the Securable memory area is to protect sensitive code and data (secure
keys storage) which can be executed only once at boot, and never again unless a new
reset occurs.
The flash memory embeds the error correction code (ECC) feature supporting:
• Single error detection and correction
• Double error detection
• The address of the ECC fail can be read in the ECC register
• 1 Kbyte (128 double word) OTP (one-time programmable) for user data. The OTP area
is available in Bank 1 only. The OTP data cannot be erased and can be written only
once.

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Functional overview STM32G484xE

3.5 Embedded SRAM

STM32G484xE devices feature 128 Kbytes of embedded SRAM. This SRAM is split into
three blocks:
• 80 Kbytes mapped at address 0x2000 0000 (SRAM1). The CM4 can access the
SRAM1 through the System Bus. The first 32 Kbytes of SRAM1 support hardware
parity check.
• 16 Kbytes mapped at address 0x2001 4000 (SRAM2). The CM4 can access the
SRAM2 through the System bus. SRAM2 can be retained in standby modes.
• 32 Kbytes mapped at address 0x1000 0000 (CCM SRAM). It is accessed by the CPU
through I-Code/D-Code bus for maximum performance.
It is also aliased at 0x2001 8000 address to be accessed by all masters (CPU, DMA1,
DMA2) through SBUS contiguously to SRAM1 and SRAM2. The CCM SRAM supports
hardware parity check and can be write-protected with 1-Kbyte granularity.
• The memory can be accessed in read/write at max CPU clock speed with 0 wait states.

3.6 Multi-AHB bus matrix

The 32-bit multi-AHB bus matrix interconnects all the masters (CPU, DMAs) and the slaves
(flash memory, RAM, FSMC, QUADSPI, AHB and APB peripherals). It also ensures a
seamless and efficient operation even when several high-speed peripherals work
simultaneously.

Figure 2. Multi-AHB bus matrix

Cortex®-M4
DMA1 DMA2
with FPU
D-bus

S-bus
I-bus

ICode
ACCEL

FLASH
DCode 512 KB

SRAM1

CCM
SRAM

SRAM2

AHB1
peripherals

AHB2
peripherals

FSMC

QUADSPI

BusMatrix-S
MSv42663V1

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3.7 Boot modes

At startup, a BOOT0 pin (or nBOOT0 option bit) and an nBOOT1 option bit are used to
select one of three boot options:
• Boot from user flash memory
• Boot from system memory
• Boot from embedded SRAM
The BOOT0 value may come from the PB8-BOOT0 pin or from an nBOOT0 option bit
depending on the value of a user nBOOT_SEL option bit to free the GPIO pad if needed.
The boot loader is located in the system memory. It is used to reprogram the flash memory
by using USART, I2C, SPI, and USB through the DFU (device firmware upgrade).

3.8 CORDIC
The CORDIC provides hardware acceleration of certain mathematical functions, notably
trigonometric, commonly used in motor control, metering, signal processing and many other
applications.
It speeds up the calculation of these functions compared to a software implementation,
allowing a lower operating frequency, or freeing up processor cycles in order to perform
other tasks.

Cordic features
• 24-bit CORDIC rotation engine
• Circular and Hyperbolic modes
• Rotation and Vectoring modes
• Functions: Sine, Cosine, Sinh, Cosh, Atan, Atan2, Atanh, Modulus, Square root,
Natural logarithm
• Programmable precision up to 20-bit
• Fast convergence: 4 bits per clock cycle
• Supports 16-bit and 32-bit fixed point input and output formats
• Low latency AHB slave interface
• Results can be read as soon as ready without polling or interrupt
• DMA read and write channels

3.9 Filter mathematical accelerator (FMAC)

The filter mathematical accelerator unit performs arithmetic operations on vectors. It
comprises a multiplier/accumulator (MAC) unit, together with address generation logic,
which allows it to index vector elements held in local memory.
The unit includes support for circular buffers on input and output, which allows digital filters
to be implemented. Both finite and infinite impulse response filters can be realized.
The unit allows frequent or lengthy filtering operations to be offloaded from the CPU, freeing
up the processor for other tasks. In many cases it can accelerate such calculations
compared to a software implementation, resulting in a speed-up of time critical tasks.

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Functional overview STM32G484xE

FMAC features
• 16 x 16-bit multiplier
• 24+2-bit accumulator with addition and subtraction
• 16-bit input and output data
• 256 x 16-bit local memory
• Up to three areas can be defined in memory for data buffers (two input, one output),
defined by programmable base address pointers and associated size registers
• Input and output sample buffers can be circular
• Buffer “watermark” feature reduces overhead in interrupt mode
• Filter functions: FIR, IIR (direct form 1)
• AHB slave interface
• DMA read and write data channels

3.10 Cyclic redundancy check calculation unit (CRC)

The CRC (cyclic redundancy check) calculation unit is used to get a CRC code using a
configurable generator with polynomial value and size.
Among other applications, the CRC-based techniques are used to verify data transmission
or storage integrity. In the scope of the EN/IEC 60335-1 standard, they offer a mean to verify
the flash memory integrity.
The CRC calculation unit helps to compute a signature of the software during runtime, which
can be ulteriorly compared with a reference signature generated at link-time and which can
be stored at a given memory location.

3.11 Power supply management

3.11.1 Power supply schemes

The STM32G484xE devices require a 1.71 V to 3.6 V VDD operating voltage supply. Several
independent supplies, can be provided for specific peripherals:
• VDD = 1.71 V to 3.6 V
VDD is the external power supply for the I/Os, the internal regulator and the system
analog such as reset, power management and internal clocks. It is provided externally
through the VDD pins.
• VDDA = 1.62 V to 3.6 V (see Section 5: Electrical characteristics for the minimum VDDA
voltage required for ADC, DAC, COMP, OPAMP, VREFBUF operation).
VDDA is the external analog power supply for A/D converters, D/A converters, voltage
reference buffer, operational amplifiers and comparators. The VDDA voltage level is
independent from the VDD voltage and should preferably be connected to VDD when
these peripherals are not used.
• VBAT = 1.55 V to 3.6 V
VBAT is the power supply for RTC, external clock 32 kHz oscillator and backup registers
(through power switch) when VDD is not present.

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• VREF-, VREF+
VREF+ is the input reference voltage for ADCs and DACs. It is also the output of the
internal voltage reference buffer when enabled.
When VDDA < 2 V VREF+ must be equal to VDDA.
When VDDA ≥ 2 V VREF+ must be between 2 V and VDDA.
The internal voltage reference buffer supports three output voltages, which are
configured with VRS bits in the VREFBUF_CSR register:
– VREF+ = 2.048 V
– VREF+ = 2.5 V
– VREF+ = 2.9 V
VREF- is double bonded with VSSA.

3.11.2 Power supply supervisor

The device has an integrated ultra-low-power brown-out reset (BOR) active in all modes
(except for Shutdown mode). The BOR ensures proper operation of the device after power-
on and during power down. The device remains in reset mode when the monitored supply
voltage VDD is below a specified threshold, without the need for an external reset circuit.
The lowest BOR level is 1.71 V at power on, and other higher thresholds can be selected
through option bytes.The device features an embedded programmable voltage detector
(PVD) that monitors the VDD power supply and compares it to the VPVD threshold. An
interrupt can be generated when VDD drops below the VPVD threshold and/or when VDD is
higher than the VPVD threshold. The interrupt service routine can then generate a warning
message and/or put the MCU into a safe state. The PVD is enabled by software.
In addition, the device embeds a peripheral voltage monitor which compares the
independent supply voltages VDDA, with a fixed threshold in order to ensure that the
peripheral is in its functional supply range.

3.11.3 Voltage regulator

Two embedded linear voltage regulators, main regulator (MR) and low-power regulator
(LPR), supply most of digital circuitry in the device. The MR is used in Run and Sleep
modes. The LPR is used in Low-power run, Low-power sleep and Stop modes. In Standby
and Shutdown modes, both regulators are powered down and their outputs set in high-
impedance state, such as to bring their current consumption close to zero.
The device supports dynamic voltage scaling to optimize its power consumption in Run
mode. the voltage from the main regulator that supplies the logic (VCORE) can be adjusted
according to the system’s maximum operating frequency.
The main regulator (MR) operates in the following ranges:
• Range 1 boost mode with the CPU running at up to 170 MHz.
• Range 1 normal mode with CPU running at up to 150 MHz.
• Range 2 with a maximum CPU frequency of 26 MHz.

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3.11.4 Low-power modes

By default, the microcontroller is in Run mode after system or power Reset. It is up to the
user to select one of the low-power modes described below:
• Sleep mode: In Sleep mode, only the CPU is stopped. All peripherals continue to
operate and can wake up the CPU when an interrupt/event occurs.
• Low-power run mode: This mode is achieved with VCORE supplied by the low-power
regulator to minimize the regulator's operating current. The code can be executed from
SRAM or from flash, and the CPU frequency is limited to 2 MHz. The peripherals with
independent clock can be clocked by HSI16.
• Low-power sleep mode: This mode is entered from the low-power run mode. Only the
CPU clock is stopped. When wakeup is triggered by an event or an interrupt, the
system reverts to the Low power run mode.
• Stop mode: In Stop mode, the device achieves the lowest power consumption while
retaining the SRAM and register contents. All clocks in the VCORE domain are
stopped. The PLL, as well as the HSI16 RC oscillator and the HSE crystal oscillator are
disabled. The LSE or LSI keep running. The RTC can remain active (Stop mode with
RTC, Stop mode without RTC). Some peripherals with wakeup capability can enable
the HSI16 RC during Stop mode, so as to get clock for processing the wakeup event.
• Standby mode: The Standby mode is used to achieve the lowest power consumption
with brown-out reset, BOR. The internal regulator is switched off to power down the
VCORE domain. The PLL, as well as the HSI16 RC oscillator and the HSE crystal
oscillator are also powered down. The RTC can remain active (Standby mode with
RTC, Standby mode without RTC). The BOR always remains active in Standby mode.
For each I/O, the software can determine whether a pull-up, a pull-down or no resistor
shall be applied to that I/O during Standby mode. Upon entering Standby mode, SRAM
and register contents are lost except for registers in the RTC domain and standby
circuitry. The device exits Standby mode upon external reset event (NRST pin), IWDG
reset event, wakeup event (WKUP pin, configurable rising or falling edge) or RTC
event (alarm, periodic wakeup, timestamp, tamper), or when a failure is detected on
LSE (CSS on LSE).
• Shutdown mode: The Shutdown mode allows to achieve the lowest power
consumption. The internal regulator is switched off to power down the VCORE domain.
The PLL, as well as the HSI16 and LSI RC-oscillators and HSE crystal oscillator are
also powered down. The RTC can remain active (Shutdown mode with RTC, Shutdown
mode without RTC). The BOR is not available in Shutdown mode. No power voltage
monitoring is possible in this mode. Therefore, switching to RTC domain is not
supported. SRAM and register contents are lost except for registers in the RTC
domain. The device exits Shutdown mode upon external reset event (NRST pin),
IWDG reset event, wakeup event (WKUP pin, configurable rising or falling edge) or
RTC event (alarm, periodic wakeup, timestamp, tamper).

3.11.5 Reset mode

In order to improve the consumption under reset, the I/Os state under and after reset is
“analog state” (the I/O schmitt trigger is disabled). In addition, the internal reset pull-up is
deactivated when the reset source is internal.

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3.11.6 VBAT operation

The VBAT pin allows to power the device VBAT domain from an external battery, an external
supercapacitor, or from VDD when there is no external battery and when an external
supercapacitor is present. The VBAT pin supplies the RTC with LSE and the backup
registers. Three anti-tamper detection pins are available in VBAT mode.
The VBAT operation is automatically activated when VDD is not present. An internal VBAT
battery charging circuit is embedded and can be activated when VDD is present.
Note: When the microcontroller is supplied from VBAT, neither external interrupts nor RTC
alarm/events exit the microcontroller from the VBAT operation.

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3.12 Interconnect matrix

Several peripherals have direct connections between them. This allows autonomous
communication between peripherals, saving CPU resources thus power supply
consumption. In addition, these hardware connections allow fast and predictable latency.
Depending on peripherals, these interconnections can operate in Run, Sleep and Stop
modes.

Table 3. STM32G484xE peripherals interconnect matrix

Low-power sleep
Low-power run
Sleep
Interconnect

Stop
Run
Interconnect source Interconnect action
destination

TIMx Timers synchronization or chaining Y Y Y Y -

ADCx
Conversion triggers Y Y Y Y -
TIMx DACx
DMA Memory to memory transfer trigger Y Y Y Y -
COMPx Comparator output blanking Y Y Y Y -
TIM16/TIM17 IRTIM Infrared interface output generation Y Y Y Y -
TIM1, 8, 20 Timer input channel, trigger, break from
Y Y Y Y -
TIM2, 3, 4, 5 analog signals comparison
Low-power timer triggered by analog
COMPx LPTIMER1 Y Y Y Y Y
signals comparison
COMPx Output is an input event or a
HRTIM Y Y Y Y -
fault input for HRTIM
TIM1, 8, 20 Timer triggered by analog watchdog Y Y Y Y -
ADCx HRTIM external event source can be
HRTIM Y Y Y Y -
ADCx analog watchdog
TIM16 Timer input channel from RTC events Y Y Y Y -
RTC Low-power timer triggered by RTC
LPTIMER1 Y Y Y Y Y
alarms or tampers
All clocks sources (internal and TIM5, Clock source used as input channel for
Y Y Y Y -
external) TIM15, 16, 17 RC measurement and trimming
USB TIM2 Timer triggered by USB SOF Y Y - - -
CSS
RAM (parity error) TIM1,8, 20 Timer break
flash memory (ECC error) TIM15,16,17 Y Y Y Y -
COMPx HRTIM HRTIM SYSFLT
PVD

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Table 3. STM32G484xE peripherals interconnect matrix (continued)

Low-power sleep
Low-power run
Sleep
Interconnect

Stop
Run
Interconnect source Interconnect action
destination

TIM1,8,20 Timer break

CPU (hard fault) TIM15/16/17 Y Y Y Y -
HRTIM HRTIM SYSFLT
TIMx External trigger Y Y Y Y -
LPTIMER1 External trigger Y Y Y Y Y

GPIO External fault/event/Synchro inputs for

HRTIM Y Y Y Y -
HRTIM
ADCx
Conversion external trigger Y Y Y Y -
DACx

DACx/ADCx Conversion trigger Y Y Y Y -

HRTIM
GPIO Synchro output for HRTIM Y Y Y Y -

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3.13 Clocks and startup

The clock controller distributes the clocks coming from different oscillators to the core and
the peripherals. It also manages clock gating for low-power modes and ensures clock
robustness. It features:
• Clock prescaler: to get the best trade-off between speed and current consumption,
the clock frequency to the CPU and peripherals can be adjusted by a programmable
prescaler
• Safe clock switching: clock sources can be changed safely on the fly in run mode
through a configuration register.
• Clock management: to reduce power consumption, the clock controller can stop the
clock to the core, individual peripherals or memory.
• System clock source: three different sources can deliver SYSCLK system clock:
– 4 - 48 MHz high-speed oscillator with external crystal or ceramic resonator (HSE).
It can supply clock to system PLL. The HSE can also be configured in bypass
mode for an external clock.
– 16 MHz high-speed internal RC oscillator (HSI16), trimmable by software. It can
supply clock to system PLL.
– System PLL with maximum output frequency of 170 MHz. It can be fed with HSE
or HSI16 clocks.
• RC48 with clock recovery system (HSI48): internal HSIRC48 MHz clock source can
be used to drive the USB or the RNG peripherals.
• Auxiliary clock source: two ultra-low-power clock sources for the real-time clock
(RTC):
– 32.768 kHz low-speed oscillator with external crystal (LSE), supporting four drive
capability modes. The LSE can also be configured in bypass mode for using an
external clock.
– 32 kHz low-speed internal RC oscillator (LSI) with ±5% accuracy, also used to
clock an independent watchdog.
• Peripheral clock sources: several peripherals (I2S, USART, I2C, LPTimer, ADC, SAI,
RNG) have their own clock independent of the system clock.
• Clock security system (CSS): in the event of HSE clock failure, the system clock is
automatically switched to HSI16 and, if enabled, a software interrupt is generated. LSE
clock failure can also be detected and generate an interrupt.
• Clock-out capability:
– MCO: microcontroller clock output: it outputs one of the internal clocks for external
use by the application
– LSCO: low speed clock output: it outputs LSI or LSE in all low-power modes.
Several prescalers allow to configure the AHB frequency, the High-speed APB (APB2) and
the low speed APB (APB1) domains. The maximum frequency of the AHB and the APB
domains is 170 MHz.

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3.14 General-purpose inputs/outputs (GPIOs)

Each of the GPIO pins can be configured by software as output (push-pull or open-drain), as
input (with or without pull-up or pull-down) or as peripheral alternate function. Most of the
GPIO pins are shared with digital or analog alternate functions. Fast I/O toggling can be
achieved thanks to their mapping on the AHB2 bus.
The I/Os alternate function configuration can be locked if needed following a specific
sequence in order to avoid spurious writing to the I/Os registers.

3.15 Direct memory access controller (DMA)

The device embeds 2 DMAs. Refer to Table 4: DMA implementation for the features
implementation.
Direct memory access (DMA) is used in order to provide a high-speed data transfer
between peripherals and memory as well as from memory to memory. Data can be quickly
moved by DMA without any CPU actions. This keeps the CPU resources free for other
operations.
The two DMA controllers have 16 channels in total, each one dedicated to manage memory
access requests from one or more peripherals. Each controller has an arbiter for handling
the priority between DMA requests.
The DMA supports:
• 16 independently configurable channels (requests)
– Each channel is connected to a dedicated hardware DMA request, a software
trigger is also supported on each channel. This configuration is done by software.
• Priorities between requests from channels of one DMA are both software
programmable (4 levels: very high, high, medium, low) or hardware programmable in
case of equality (request 1 has priority over request 2, etc.)
• Independent source and destination transfer size (byte, half word, word), emulating
packing and unpacking. Source/destination addresses must be aligned on the data
size.
• Support for circular buffer management
• 3 event flags (DMA half transfer, DMA transfer complete and DMA transfer error)
logically ORed together in a single interrupt request for each channel
• Memory-to-memory transfer
• Peripheral-to-memory, memory-to-peripheral, and peripheral-to-peripheral transfers
• Access to flash memory, SRAM, APB and AHB peripherals as source and destination
• Programmable number of data to be transferred: up to 65536.

Table 4. DMA implementation

DMA features DMA1 DMA2
Number of regular channels 8 8

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3.16 DMA request router (DMAMUX)

When a peripheral indicates a request for DMA transfer by setting its DMA request line, the
DMA request is pending until it is served and the corresponding DMA request line is reset.
The DMA request router allows to route the DMA control lines between the peripherals and
the DMA controllers of the product.
An embedded multi-channel DMA request generator can be considered as one of such
peripherals. The routing function is ensured by a multi-channel DMA request line
multiplexer. Each channel selects a unique set of DMA control lines, unconditionally or
synchronously with events on synchronization inputs.
For simplicity, the functional description is limited to DMA request lines. The other DMA
control lines are not shown in figures or described in the text. The DMA request generator
produces DMA requests following events on DMA request trigger inputs.

3.17 Interrupts and events

3.17.1 Nested vectored interrupt controller (NVIC)

The STM32G484xE devices embed a nested vectored interrupt controller which is able to
manage 16 priority levels, and to handle up to 102 maskable interrupt channels plus the 16
interrupt lines of the Cortex®-M4.
The NVIC benefits are the following:
• Closely coupled NVIC gives low latency interrupt processing
• Interrupt entry vector table address passed directly to the core
• Allows early processing of interrupts
• Processing of late arriving higher priority interrupts
• Support for tail chaining
• Processor state automatically saved
• Interrupt entry restored on interrupt exit with no instruction overhead
The NVIC hardware block provides flexible interrupt management features with minimal
interrupt latency.

3.17.2 Extended interrupt/event controller (EXTI)

The extended interrupt/event controller consists of 44 edge detector lines used to generate
interrupt/event requests and to wake-up the system from the Stop mode. Each external line
can be independently configured to select the trigger event (rising edge, falling edge, both)
and can be masked independently.
A pending register maintains the status of the interrupt requests. The internal lines are
connected to peripherals with wakeup from Stop mode capability. The EXTI can detect an
external line with a pulse width shorter than the internal clock period. Up to 107 GPIOs can
be connected to the 16 external interrupt lines.

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3.18 Analog-to-digital converter (ADC)

The device embeds five successive approximation analog-to-digital converters with the
following features:
• 12-bit native resolution, with built-in calibration
• 4 Msps maximum conversion rate with full resolution
– Down to 41.67 ns sampling time
– Increased conversion rate for lower resolution (up to 6.66 Msps for 6-bit
resolution)
• One external reference pin is available on all packages, allowing the input voltage
range to be independent from the power supply
• Single-ended and differential mode inputs
• Low-power design
– Capable of low-current operation at low conversion rate (consumption decreases
linearly with speed)
– Dual clock domain architecture: ADC speed independent from CPU frequency
• Highly versatile digital interface
– Single-shot or continuous/discontinuous sequencer-based scan mode: 2 groups
of analog signals conversions can be programmed to differentiate background and
high-priority real-time conversions
– Each ADC support multiple trigger inputs for synchronization with on-chip timers
and external signals
– Results stored into a data register or in RAM with DMA controller support
– Data pre-processing: left/right alignment and per channel offset compensation
– Built-in oversampling unit for enhanced SNR
– Channel-wise programmable sampling time
– Analog watchdog for automatic voltage monitoring, generating interrupts and
trigger for selected timers
– Hardware assistant to prepare the context of the injected channels to allow fast
context switching
– Flexible sample time control
– Hardware gain and offset compensation

3.18.1 Temperature sensor

The temperature sensor (TS) generates a voltage VTS that varies linearly with temperature.
The temperature sensor is internally connected to the ADCs input channels which is used to
convert the sensor output voltage into a digital value.
The sensor provides good linearity but it has to be calibrated to obtain good overall
accuracy of the temperature measurement. As the offset of the temperature sensor varies
from chip to chip due to process variation, the uncalibrated internal temperature sensor is
suitable for applications that detect temperature changes only.
To improve the accuracy of the temperature sensor measurement, each device is
individually factory-calibrated by ST. The temperature sensor factory calibration data are
stored by ST in the system memory area, accessible in read-only mode.

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Table 5. Temperature sensor calibration values

Calibration value name Description Memory address

TS ADC raw data acquired at a

TS_CAL1 temperature of 30 °C (± 5 °C), 0x1FFF 75A8 - 0x1FFF 75A9
VDDA = VREF+ = 3.0 V (± 10 mV)
TS ADC raw data acquired at a
TS_CAL2 temperature of 130 °C (± 5 °C), 0x1FFF 75CA - 0x1FFF 75CB
VDDA = VREF+ = 3.0 V (± 10 mV)

3.18.2 Internal voltage reference (VREFINT)

The internal voltage reference (VREFINT) provides a stable (bandgap) voltage output for
the ADC and the comparators. The VREFINT is internally connected to the ADCx_IN18,
x = 1,3,4,5 input channel. The precise voltage of VREFINT is individually measured for each
part by ST during production test and stored in the system memory area. It is accessible in
read-only mode.

Table 6. Internal voltage reference calibration values

Calibration value name Description Memory address

Raw data acquired at a

VREFINT temperature of 30 °C (± 5 °C), 0x1FFF 75AA - 0x1FFF 75AB
VDDA = VREF+ = 3.0 V (± 10 mV)

3.18.3 VBAT battery voltage monitoring

This embedded hardware enables the application to measure the VBAT battery voltage using
the internal ADC1_IN17 channel. As the VBAT voltage may be higher than the VDDA, and
thus outside the ADC input range, the VBAT pin is internally connected to a bridge divider by
3. As a consequence, the converted digital value is one third of the VBAT voltage.

3.18.4 Operational amplifier internal output (OPAMPxINT):

The OPAMPx (x = 1...6) output OPAMPxINT can be sampled using an ADCx (x = 1...5)
internal input channel. In this case, the I/O on which the OPAMPx output is mapped can be
used as GPIO.

3.19 Digital to analog converter (DAC)

Seven 12 bit DAC channels (3 external buffered and 4 internal unbuffered) can be used to
convert digital signals into analog voltage signal outputs. The chosen design structure is
composed of integrated resistor strings and an amplifier in inverting configuration.

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This digital interface supports the following features:

• Up to two DAC output channels
• 8-bit or 12-bit output mode
• Buffer offset calibration (factory and user trimming)
• Left or right data alignment in 12-bit mode
• Synchronized update capability
• Noise-wave generation
• Triangular-wave generation
• Saw tooth wave generation
• Dual DAC channel independent or simultaneous conversions
• DMA capability for each channel
• External triggers for conversion
• Sample and hold low-power mode, with internal or external capacitor
• Up to 1 Msps for external output and 15 Msps for internal output
The DAC channels are triggered through the timer update outputs that are also connected
to different DMA channels.

3.20 Voltage reference buffer (VREFBUF)

The STM32G484xE devices embed a voltage reference buffer which can be used as
voltage reference for ADC, DACs and also as voltage reference for external components
through the VREF+ pin.
The internal voltage reference buffer supports three voltages:
• 2.048 V
• 2.5 V
• 2.9 V
An external voltage reference can be provided through the VREF+ pin when the internal
voltage reference buffer is off.
The VREF+ pin is double-bonded with VDDA on some packages. In these packages the
internal voltage reference buffer is not available.

Figure 3. Voltage reference buffer

VREFBUF
VDDA DAC, ADC

Bandgap + VREF+

Low frequency
100 nF
cut-off capacitor

MSv40197V1

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3.21 Comparators (COMP)

The STM32G484xE devices embed seven rail-to-rail comparators with programmable
reference voltage (internal or external), hysteresis.
The reference voltage can be one of the following:
• External I/O
• DAC output channels
• Internal reference voltage or submultiple (1/4, 1/2, 3/4).
All comparators can wake up from Stop mode, generate interrupts and breaks for the timers.

3.22 Operational amplifier (OPAMP)

The STM32G484xE devices embed six operational amplifiers with external or internal
follower routing and PGA capability.
The operational amplifier features:
• 13 MHz bandwidth
• Rail-to-rail input/output
• PGA with a non-inverting gain ranging of 2, 4, 8, 16, 32 or 64 or inverting gain ranging
of -1, -3, -7, -15, -31 or -63

3.23 Random number generator (RNG)

All devices embed an RNG that delivers 32-bit random numbers generated by an integrated
analog circuit.

3.24 Advanced encryption standard hardware accelerator (AES)

The STM32G484xE devices embed an AES hardware accelerator that can be used both to
encipher and to decipher data using an AES algorithm.

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The AES peripheral supports:

• Encryption/decryption using AES Rijndael block cipher algorithm
• NIST FIPS 197 compliant implementation of AES encryption/decryption algorithm
• 128-bit and 256-bit register for storing the encryption, decryption or derivation key (4x
32-bit registers)
• Electronic codebook (ECB), cipher block chaining (CBC), Counter mode (CTR), Galois
Counter Mode (GCM), Galois Message Authentication Code mode (GMAC) and Cipher
Message Authentication Code mode (CMAC) supported
• Key scheduler
• Key derivation for decryption
• 128-bit data block processing
• 128-bit, 256-bit key length
• 1x32-bit INPUT buffer and 1x32-bit OUTPUT buffer
• Register access supporting 32-bit data width only
• One 128-bit Register for the initialization vector when AES is configured in CBC mode
or for the 32-bit counter initialization when CTR mode is selected, GCM mode or
CMAC mode
• Automatic data flow control with support of direct memory access (DMA) using 2
channels, one for incoming data, and one for outcoming data
• Suspend a message if another message with a higher priority needs to be processed.

3.25 Timers and watchdogs

The STM32G484xE devices include One High Resolution time, three advanced motor
control timers, up to nine general-purpose timers, two basic timers, one low-power timer,
two watchdog timers and a SysTick timer. The table below compares the features of the
advanced motor control, general purpose and basic timers.

Table 7. Timer feature comparison

DMA Capture/
Counter Counter Prescaler Complementary
Timer type Timer request compare
resolution type factor outputs
generation channels

High /1 /2 /4
resolution HRTIM 16-bit Up (x2 x4 x8 x16 Yes 12 Yes
timer x32, with DLL)
Advanced Up, Any integer
TIM1, TIM8,
motor 16-bit down, between 1 and Yes 4 4
TIM20
control Up/down 65536
Up, Any integer
General-
TIM2, TIM5 32-bit down, between 1 and Yes 4 No
purpose
Up/down 65536
Up, Any integer
General-
TIM3, TIM4 16-bit down, between 1 and Yes 4 No
purpose
Up/down 65536

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Table 7. Timer feature comparison (continued)

DMA Capture/
Counter Counter Prescaler Complementary
Timer type Timer request compare
resolution type factor outputs
generation channels

Any integer
General-
TIM15 16-bit Up between 1 and Yes 2 1
purpose
65536
Any integer
General-
TIM16, TIM17 16-bit Up between 1 and Yes 1 1
purpose
65536
Any integer
Basic TIM6, TIM7 16-bit Up between 1 and Yes 0 No
65536

3.25.1 High-resolution timer (HRTIM)

The high-resolution timer (HRTIM) allows generating digital signals with high-accuracy
timings, such as PWM or phase-shifted pulses.
It consists of 7 timers, 1 master and 6 slaves, totaling 12 high-resolution outputs, which can
be coupled by pairs for deadtime insertion. It also features 6 fault inputs for protection
purposes and 10 inputs to handle external events such as current limitation, zero voltage or
zero current switching.
HRTIM timer is made of a digital kernel clocked at 170 MHz followed by delay lines. Delay
lines with closed loop control guarantee a 184 ps resolution whatever the voltage,
temperature or chip-to-chip manufacturing process deviation. The high-resolution is
available on the 12 outputs in all operating modes: variable duty cycle, variable frequency,
and constant ON time.
The slave timers can be combined to control multiswitch complex converters or operate
independently to manage multiple independent converters.
The waveforms are defined by a combination of user-defined timings and external events
such as analog or digital feedbacks signals.
HRTIM timer includes options for blanking and filtering out spurious events or faults. It also
offers specific modes and features to offload the CPU: DMA requests, burst mode controller,
push-pull and resonant mode.
It supports many topologies including LLC, Full bridge phase shifted, buck or boost
converters, either in voltage or current mode, as well as lighting application (fluorescent or
LED). It can also be used as a general purpose timer, for instance to achieve high-resolution
PWM-emulated DAC.
In debug mode, the HRTIM counters can be frozen and the PWM outputs enter safe state.

3.25.2 Advanced motor control timer (TIM1, TIM8, TIM20)

The advanced motor control timers can each be seen as a four-phase
PWM multiplexed on 8 channels. They have complementary PWM outputs with
programmable inserted dead-times. They can also be seen as complete general-purpose
timers.

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The 4 independent channels can be used for:

• Input capture
• Output compare
• PWM generation (edge or center-aligned modes) with full modulation capability
(0-100%)
• One-pulse mode output
In debug mode, the advanced motor control timer counter can be frozen and the PWM
outputs disabled in order to turn off any power switches driven by these outputs.
Many features are shared with the general-purpose TIMx timers (described in
Section 3.25.3) using the same architecture, so the advanced motor control timers can work
together with the TIMx timers via the Timer Link feature for synchronization or event
chaining.

3.25.3 General-purpose timers (TIM2, TIM3, TIM4, TIM5, TIM15, TIM16,

TIM17)
There are up to seven synchronizable general-purpose timers embedded in the
STM32G484xE devices (see Table 7 for differences). Each general-purpose timer can be
used to generate PWM outputs, or act as a simple time base.
• TIM2, TIM3, TIM4 and TIM5
They are full-featured general-purpose timers:
– TIM2 and TIM5 have a 32-bit auto-reload up/downcounter and 32-bit prescaler
– TIM3 and TIM4 have 16-bit auto-reload up/downcounter and 16-bit prescaler.
These timers feature 4 independent channels for input capture/output compare, PWM
or one-pulse mode output. They can work together, or with the other general-purpose
timers via the Timer Link feature for synchronization or event chaining.
The counters can be frozen in debug mode.
All have independent DMA request generation and support quadrature encoders.
• TIM15, 16 and 17
They are general-purpose timers with mid-range features:
They have 16-bit auto-reload upcounters and 16-bit prescalers.
– TIM15 has 2 channels and 1 complementary channel
– TIM16 and TIM17 have 1 channel and 1 complementary channel
All channels can be used for input capture/output compare, PWM or one-pulse mode
output.
The timers can work together via the Timer Link feature for synchronization or event
chaining. The timers have independent DMA request generation.
The counters can be frozen in debug mode.

3.25.4 Basic timers (TIM6 and TIM7)

The basic timers are mainly used for DAC trigger generation. They can also be used as
generic 16-bit timebases.

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3.25.5 Low-power timer (LPTIM1)

The devices embed a low-power timer. This timer has an independent clock and are running
in Stop mode if it is clocked by LSE, LSI or an external clock. It is able to wakeup the system
from Stop mode.
LPTIM1 is active in Stop mode.
This low-power timer supports the following features:
• 16-bit up counter with 16-bit autoreload register
• 16-bit compare register
• Configurable output: pulse, PWM
• Continuous/ one shot mode
• Selectable software/hardware input trigger
• Selectable clock source
– Internal clock sources: LSE, LSI, HSI16 or APB clock
– External clock source over LPTIM input (working even with no internal clock
source running, used by pulse counter application).
• Programmable digital glitch filter
• Encoder mode

3.25.6 Independent watchdog (IWDG)

The independent watchdog is based on a 12-bit downcounter and an 8-bit prescaler. It is
clocked from an independent 32 kHz internal RC (LSI) and as it operates independently
from the main clock, it can operate in Stop and Standby modes. It can be used either as a
watchdog to reset the device when a problem occurs, or as a free running timer for
application timeout management. It is hardware or software configurable through the option
bytes. The counter can be frozen in debug mode.

3.25.7 System window watchdog (WWDG)

The window watchdog is based on a 7-bit downcounter that can be set as free running. It
can be used as a watchdog to reset the device when a problem occurs. It is clocked from
the main clock. It has an early warning interrupt capability and the counter can be frozen in
debug mode.

3.25.8 SysTick timer

This timer is dedicated to real-time operating systems, but could also be used as a standard
down counter. It features:
• A 24-bit down counter
• Autoreload capability
• Maskable system interrupt generation when the counter reaches 0.
• Programmable clock source

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3.26 Real-time clock (RTC) and backup registers

The RTC supports the following features:
• Calendar with subsecond, seconds, minutes, hours (12 or 24 format), week day, date,
month, year, in BCD (binary-coded decimal) format.
• Automatic correction for 28, 29 (leap year), 30, and 31 days of the month.
• Two programmable alarms.
• On-the-fly correction from 1 to 32767 RTC clock pulses. This can be used to
synchronize it with a master clock.
• Reference clock detection: a more precise second source clock (50 or 60 Hz) can be
used to enhance the calendar precision.
• Digital calibration circuit with 0.95 ppm resolution, to compensate for quartz crystal
inaccuracy.
• Timestamp feature which can be used to save the calendar content. This function can
be triggered by an event on the timestamp pin, or by a tamper event, or by a switch to
VBAT mode.
• 17-bit auto-reload wakeup timer (WUT) for periodic events with programmable
resolution and period.
The RTC is supplied through a switch that takes power either from the VDD supply when
present or from the VBAT pin.
The RTC clock sources can be:
• A 32.768 kHz external crystal (LSE)
• An external resonator or oscillator (LSE)
• The internal low power RC oscillator (LSI, with typical frequency of 32 kHz)
• The high-speed external clock (HSE) divided by 32.
The RTC is functional in VBAT mode and in all low-power modes when it is clocked by the
LSE. When clocked by the LSI, the RTC is not functional in VBAT mode, but is functional in
all low-power modes except Shutdown mode.
All RTC events (Alarm, WakeUp Timer, Timestamp) can generate an interrupt and wakeup
the device from the low-power modes.

3.27 Tamper and backup registers (TAMP)

• 32 32-bit backup registers, retained in all low-power modes and also in VBAT mode.
They can be used to store sensitive data as their content is protected by an tamper
detection circuit. They are not reset by a system or power reset, or when the device
wakes up from Standby or Shutdown mode.
• Up to three tamper pins for external tamper detection events. The external tamper pins
can be configured for edge detection, edge and level, level detection with filtering.
• Five internal tampers events.
• Any tamper detection can generate a RTC timestamp event.
• Any tamper detection erases the backup registers.
• Any tamper detection can generate an interrupt and wake-up the device from all low-
power modes.

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Functional overview STM32G484xE

3.28 Infrared transmitter

The STM32G484xE devices provide an infrared transmitter solution. The solution is based
on internal connections between TIM16 and TIM17 as shown in the figure below.
TIM17 is used to provide the carrier frequency and TIM16 provides the main signal to be
sent. The infrared output signal is available on PB9 or PA13.
To generate the infrared remote control signals, TIM16 channel 1 and TIM17 channel 1 must
be properly configured to generate correct waveforms. All standard IR pulse modulation
modes can be obtained by programming the two timers output compare channels.

Figure 4. Infrared transmitter

TIM17_CH1

IRTIM IR_OUT

TIM16_CH1

MS30474V2

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3.29 Inter-integrated circuit interface (I2C)

The device embeds four I2Cs. Refer to Table 8: I2C implementation for the features
implementation.
The I2C bus interface handles communications between the microcontroller and the serial
I2C bus. It controls all I2C bus-specific sequencing, protocol, arbitration and timing.
The I2C peripheral supports:
• I2C-bus specification and user manual rev. 5 compatibility:
– Slave and master modes, multimaster capability
– Standard-mode (Sm), with a bitrate up to 100 kbit/s
– Fast-mode (Fm), with a bitrate up to 400 kbit/s
– Fast-mode Plus (Fm+), with a bitrate up to 1 Mbit/s and 20 mA output drive I/Os
– 7-bit and 10-bit addressing mode, multiple 7-bit slave addresses
– Programmable setup and hold times
– Optional clock stretching
• System management bus (SMBus) specification rev 2.0 compatibility:
– Hardware PEC (packet error checking) generation and verification with ACK
control
– Address resolution protocol (ARP) support
– SMBus alert
• Power system management protocol (PMBusTM) specification rev 1.1 compatibility
• Independent clock: a choice of independent clock sources allowing the I2C
communication speed to be independent from the PCLK reprogramming.
• Wakeup from Stop mode on address match
• Programmable analog and digital noise filters
• 1-byte buffer with DMA capability

Table 8. I2C implementation

I2C features(1) I2C1 I2C2 I2C3 I2C4

Standard-mode (up to 100 kbit/s) X X X X

Fast-mode (up to 400 kbit/s) X X X X
Fast-mode Plus with 20mA output drive I/Os (up to 1 Mbit/s) X X X X
Programmable analog and digital noise filters X X X X
SMBus/PMBus hardware support X X X X
Independent clock X X X X
Wakeup from Stop mode on address match X X X X
1. X: supported

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Functional overview STM32G484xE

3.30 Universal synchronous/asynchronous receiver transmitter

(USART)
The STM32G484xE devices have three embedded universal synchronous receiver
transmitters (USART1, USART2 and USART3) and two universal asynchronous receiver
transmitters (UART4, USART5).
These interfaces provide asynchronous communication, IrDA SIR ENDEC support,
multiprocessor communication mode, single-wire half-duplex communication mode and
have LIN master/slave capability. They provide hardware management of the CTS and RTS
signals, and RS485 driver enable.
TheyThe USART1, USART2 and USART3 also provide a Smartcard mode (ISO 7816
compliant) and an SPI-like communication capability.
The USART comes with a Transmit FIFO (TXFIFO) and a Receive FIFO (RXFIFO). FIFO
mode is enabled by software and is disabled by default.
All USARTs have a clock domain independent from the CPU clock, allowing the U(S)ARTx
(x=1,2,3,4,5) to wake up the MCU from Stop mode. The wakeup from Stop mode can be
done on:
• Start bit detection
• Any received data frame
• A specific programmed data frame
• Some specific TXFIFO/RXFIFO status interrupts when FIFO mode is enabled
All USART interfaces can be served by the DMA controller.

Table 9. USART/UART/LPUART features

USART modes/features(1) USART1 USART2 USART3 UART4 UART5 LPUART1

Hardware flow control for modem X X X X X X

Continuous communication using DMA X X X X X X
Multiprocessor communication X X X X X X
Synchronous mode X X X - - -
Smartcard mode X X X - - -
Single-wire half-duplex communication X X X X X X
IrDA SIR ENDEC block X X X X X -
LIN mode X X X X X -
Dual clock domain X X X X X X
Wakeup from Stop mode X X X X X X
Receiver timeout interrupt X X X X X -
Modbus communication X X X X X -
Auto baud rate detection X (4 modes) -
Driver Enable X X X X X X
LPUART/USART data length 7, 8 and 9 bits

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Table 9. USART/UART/LPUART features (continued)

USART modes/features(1) USART1 USART2 USART3 UART4 UART5 LPUART1

Tx/Rx FIFO X
Tx/Rx FIFO size 8
1. X = supported.

3.31 Low-power universal asynchronous receiver transmitter

(LPUART)
The STM32G484xE devices embed one Low-Power UART. The LPUART supports
asynchronous serial communication with minimum power consumption. It supports half-
duplex single-wire communication and modem operations (CTS/RTS). It allows
multiprocessor communication.
The LPUART comes with a Transmit FIFO (TXFIFO) and a Receive FIFO (RXFIFO). FIFO
mode is enabled by software and is disabled by default. It has a clock domain independent
from the CPU clock, and can wakeup the system from Stop mode. The wake up from Stop
mode can be done on:
• Start bit detection
• Any received data frame
• A specific programmed data frame
• Some specific TXFIFO/RXFIFO status interrupts when FIFO mode is enabled
Only a 32.768 kHz clock (LSE) is needed to allow LPUART communication up to 9600
baud. Therefore, even in Stop mode, the LPUART can wait for an incoming frame while
having an extremely low energy consumption. Higher speed clock can be used to reach
higher baudrates.
The LPUART interface can be served by the DMA controller.

3.32 Serial peripheral interface (SPI)

Four SPI interfaces allow communication up to 75 Mbits/s in master and up to 41 Mbits/s in
slave, half-duplex, full-duplex and simplex modes. The 3-bit prescaler gives 8 master mode
frequencies and the frame size is configurable from 4 bits to 16 bits. The SPI interfaces
support NSS pulse mode, TI mode and hardware CRC calculation.
Two standard I2S interfaces (multiplexed with SPI2 and SPI3) supporting four different audio
standards can operate as master or slave at half-duplex communication modes. They can
be configured to transfer 16 and 24 or 32 bits with 16-bit or 32-bit data resolution and
synchronized by a specific signal. Audio sampling frequency from 8 kHz up to 192 kHz can
be set by 8-bit programmable linear prescaler. When operating in master mode it can output
a clock for an external audio component at 256 times the sampling frequency.
All SPI interfaces can be served by the DMA controller.

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3.33 Serial audio interfaces (SAI)

The device embeds 1 SAI. The SAI bus interface handles communications between the
microcontroller and the serial audio protocol.

SAI peripheral supports:

• Two independent audio sub-blocks which can be transmitters or receivers with their
respective FIFO.
• 8-word integrated FIFOs for each audio sub-block.
• Synchronous or asynchronous mode between the audio sub-blocks.
• Master or slave configuration independent for both audio sub-blocks.
• Clock generator for each audio block to target independent audio frequency sampling
when both audio sub-blocks are configured in master mode.
• Data size configurable: 8-, 10-, 16-, 20-, 24-, 32-bit.
• Peripheral with large configurability and flexibility allowing to target as example the
following audio protocol: I2S, LSB or MSB-justified, PCM/DSP, TDM, AC’97 and SPDIF
out.
• Up to 16 slots available with configurable size and with the possibility to select which
ones are active in the audio frame.
• Number of bits by frame may be configurable.
• Frame synchronization active level configurable (offset, bit length, level).
• First active bit position in the slot is configurable.
• LSB first or MSB first for data transfer.
• Mute mode.
• Stereo/Mono audio frame capability.
• Communication clock strobing edge configurable (SCK).
• Error flags with associated interrupts if enabled respectively.
– Overrun and underrun detection.
– Anticipated frame synchronization signal detection in slave mode.
– Late frame synchronization signal detection in slave mode.
– Codec not ready for the AC’97 mode in reception.
• Interruption sources when enabled:
– Errors.
– FIFO requests.
• DMA interface with 2 dedicated channels to handle access to the dedicated integrated
FIFO of each SAI audio sub-block.

Table 10. SAI features implementation

SAI features Support(1)

I2S, LSB or MSB-justified, PCM/DSP, TDM, AC’97 X

Mute mode X
Stereo/Mono audio frame capability X
16 slots X

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Table 10. SAI features implementation (continued)

SAI features Support(1)

Data size configurable: 8-, 10-, 16-, 20-, 24-, 32-bit X

FIFO size X (8 word)
SPDIF X
1. X: supported.

3.34 Controller area network (FDCAN1, FDCAN2, FDCAN3)

The controller area network (CAN) subsystem consists of three CAN modules and a shared
message RAM memory.
The three CAN modules (FDCAN1, FDCAN2 and FDCAN3) are compliant with ISO 11898-1
(CAN protocol specification version 2.0 part A, B) and CAN FD protocol specification
version 1.0.
A 3-Kbyte message RAM memory implements filters, receive FIFOs, receive buffers,
transmit event FIFOs, transmit buffers. This message RAM is shared between the three
FDCAN modules.

3.35 Universal serial bus (USB)

The STM32G484xE devices embed a full-speed USB device peripheral compliant with the
USB specification version 2.0. The internal USB PHY supports USB FS signaling,
embedded DP pull-up and also battery charging detection according to Battery Charging
Specification Revision 1.2. The USB interface implements a full-speed (12 Mbit/s) function
interface with added support for USB 2.0 Link Power Management. It has software-
configurable endpoint setting with packet memory up-to 1 Kbyte and suspend/resume
support. It requires a precise 48 MHz clock which can be generated from the internal main
PLL (the clock source must use a HSE crystal oscillator) or by the internal 48 MHz oscillator
in automatic trimming mode. The synchronization for this oscillator can be taken from the
USB data stream itself (SOF signalization) which allows crystal less operation.

3.36 USB Type-C™ / USB Power Delivery controller (UCPD)

The device embeds one controller (UCPD) compliant with USB Type-C Rev. 1.2 and USB
Power Delivery Rev. 3.0 specifications.
The controller uses specific I/Os supporting the USB Type-C and USB Power Delivery
requirements, featuring:
• USB Type-C pull-up (Rp, all values) and pull-down (Rd) resistors
• “Dead battery” support
• USB Power Delivery message transmission and reception
• FRS (fast role swap) support

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Functional overview STM32G484xE

The digital controller handles notably:

• USB Type-C level detection with de-bounce, generating interrupts
• FRS detection, generating an interrupt
• Byte-level interface for USB Power Delivery payload, generating interrupts (DMA
compatible)
• USB Power Delivery timing dividers (including a clock pre-scaler)
• CRC generation/checking
• 4b5b encode/decode
• Ordered sets (with a programmable ordered set mask at receive)
• Frequency recovery in receiver during preamble
The interface offers low-power operation compatible with Stop mode, maintaining the
capacity to detect incoming USB Power Delivery messages and FRS signaling.

3.37 Clock recovery system (CRS)

The devices embed a special block which allows automatic trimming of the internal 48 MHz
oscillator to guarantee its optimal accuracy over the whole device operational range. This
automatic trimming is based on the external synchronization signal, which could be either
derived from USB SOF signalization, from LSE oscillator, from an external signal on
CRS_SYNC pin or generated by user software. For faster lock-in during startup it is also
possible to combine automatic trimming with manual trimming action.

3.38 Flexible static memory controller (FSMC)

The Flexible static memory controller (FSMC) includes two memory controllers:
• The NOR/PSRAM memory controller
• The NAND/memory controller
This memory controller is also named Flexible memory controller (FMC).
The main features of the FMC controller are the following:
• Interface with static-memory mapped devices including:
– Static random access memory (SRAM)
– NOR flash memory/OneNAND flash memory
– PSRAM (4 memory banks)
– NAND flash memory with ECC hardware to check up to 8 Kbytes of data
– Ferroelectric RAM (FRAM)
• 8-,16- bit data bus width
• Independent Chip Select control for each memory bank
• Independent configuration for each memory bank
• Write FIFO
• The Maximum FMC_CLK frequency for synchronous accesses is HCLK/2.

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LCD parallel interface

The FMC can be configured to interface seamlessly with most graphic LCD controllers. It
supports the Intel 8080 and Motorola 6800 modes, and is flexible enough to adapt to
specific LCD interfaces. This LCD parallel interface capability makes it easy to build cost
effective graphic applications using LCD modules with embedded controllers or high
performance solutions using external controllers with dedicated acceleration.

3.39 Quad-SPI memory interface (QUADSPI)

The Quad-SPI is a specialized communication interface targeting single, dual or quad SPI
flash memories. It can operate in any of the three following modes:
• Indirect mode: all the operations are performed using the QUADSPI registers
• Status polling mode: the external flash memory status register is periodically read and
an interrupt can be generated in case of flag setting
• Memory-mapped mode: the external flash is memory mapped and is seen by the
system as if it were an internal memory.
Both throughput and capacity can be increased two-fold using dual-flash mode, where two
quad SPI flash memories are accessed simultaneously.
The Quad-SPI interface supports:
• Indirect mode: all the operations are performed using the QUADSPI registers
• Status polling mode: the external flash status register is periodically read and an
interrupt can be generated in case of flag setting
• Memory-mapped mode: the external flash is memory mapped and is seen by the
system as if it were an internal memory
• Three functional modes: indirect, status-polling, and memory-mapped
• SDR and DDR support
• Fully programmable opcode for both indirect and memory mapped mode
• Fully programmable frame format for both indirect and memory mapped mode
– Each of the 5 following phases can be configured independently (enable, length,
single/dual/quad communication)
– Instruction phase
– Address phase
– Alternate bytes phase
– Dummy cycles phase
– Data phase
• Integrated FIFO for reception and transmission
• 8, 16, and 32-bit data accesses are allowed
• DMA channel for indirect mode operations
• Programmable masking for external flash flag management
• Timeout management
• Interrupt generation on FIFO threshold, timeout, status match, operation complete, and
access error

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Functional overview STM32G484xE

3.40 Development support

3.40.1 Serial wire JTAG debug port (SWJ-DP)

The Arm SWJ-DP interface is embedded, and is a combined JTAG and serial wire debug
port that enables either a serial wire debug or a JTAG probe to be connected to the target.
Debug is performed using 2 pins only instead of 5 required by the JTAG (JTAG pins could
be re-use as GPIO with alternate function): the JTAG TMS and TCK pins are shared with
SWDIO and SWCLK, respectively, and a specific sequence on the TMS pin is used to
switch between JTAG-DP and SW-DP.

3.40.2 Embedded trace macrocell™

The Arm embedded trace macrocell provides a greater visibility of the instruction and data
flow inside the CPU core by streaming compressed data at a very high rate from the
STM32G484xE devices through a small number of ETM pins to an external hardware trace
port analyzer (TPA) device. Real-time instruction and data flow activity be recorded and then
formatted for display on the host computer that runs the debugger software. TPA hardware
is commercially available from common development tool vendors.
The Embedded trace macrocell operates with third party debugger software tools.

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4 Pinouts and pin description

4.1 UFQFPN48 pinout description

Figure 5. STM32G484xE UFQFPN48 pinout

PB8-BOOT0

PC10
PC11

PA15
PA14
VDD
PB9

PB7
PB6
PB5
PB4
PB3
48
47
46
45
44
43
42
41
40
39
38
37
VBAT 1 36 PA13
PC13 2 35 VDD
PC14-OSC32_IN 3 34 PA12
PC15-OSC32_OUT 4 33 PA11
PF0-OSC_IN 5 32 PA10

UFQFPN48
PF1-OSC_OUT 6 31 PA9
PG10-NRST 7 30 PA8
PA0 8 29 PC6
PA1 9 28 PB15
PA2 10 27 PB14
PA3 11 Exposed pad 26 PB13
PA4 12 25 PB12
13
14
15
16
17
18
19
20
21
22
23
24 VSS
PC4
PB0
PB1
PB2
VREF+
VDDA
PB10
VDD
PA5
PA6
PA7

PB11

MS60210V1

1. The above figure shows the package top view.

2. VSS pads are connected to the exposed pad.

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4.2 LQFP48 pinout description

Figure 6. STM32G484xE LQFP48 pinout

PB8-BOOT0

PA15
PA14
PA13
VDD
VSS
PB9

PB7
PB6
PB5
PB4
PB3
48
47
46
45
44
43
42
41
40
39
38
37
VBAT 1 36 VDD
PC13 2 35 VSS
PC14 - OSC32_IN 3 34 PA12
PC15 - OSC32_OUT 4 33 PA11
PF0 - OSC_IN 5 32 PA10
PF1 - OSC_OUT 6 31 PA9
PG10 - NRST 7
LQFP48 30 PA8
PA0 8 29 PB15
PA1 9 28 PB14
PA2 10 27 PB13
PA3 11 26 PB12
PA4 12 25 PB11
13
14
15
16
17
18
19
20
21
22
23
24
VSS
PB0
PB1
PB2
VSSA
VREF+
VDDA
PB10

VDD
PA5
PA6
PA7

MSv42659V2

1. The above figure shows the package top view.

4.3 LQFP64 pinout description

Figure 7. STM32G484xE LQFP64 pinout
PB8-BOOT0

PC12

PC10
PC11

PA15
PA14
PA13
VDD
VSS

PD2
PB9

PB7
PB6
PB5
PB4
PB3
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49

VBAT 1 48 VDD
PC13 2 47 VSS
PC14-OSC32_IN 3 46 PA12
PC15-OSC32_OUT 4 45 PA11
PF0-OSC_IN 5 44 PA10
PF1-OSC_OUT 6 43 PA9
PG10-NRST 7 42 PA8
PC0 8 41 PC9
PC1 9 LQFP64 40 PC8
PC2 10 39 PC7
PC3 11 38 PC6
PA0 12 37 PB15
PA1 13 36 PB14
PA2 14 35 PB13
VSS 15 34 PB12
VDD 16 33 PB11
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
PC4
PC5
PB0
PB1
PB2
VSSA
VREF+
VDDA

VSS
PB10

VDD
PA3
PA4
PA5
PA6
PA7

MSv42658V2

1. The above figure shows the package top view.

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4.4 LQFP80 pinout description

Figure 8. STM32G484xE LQFP80 pinout

PB8-BOOT0

PC12

PC10
PC11

PA15
PA14
PA13
VDD

VDD
VSS

VSS
PD2
PD1
PD0
PB9

PB7
PB6
PB5
PB4
PB3
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
VBAT 1 60 PA12
PC13 2 59 PA11
PC14-OSC32_IN 3 58 PA10
PC15-OSC32_OUT 4 57 PA9
PF0-OSC_IN 5 56 PA8
PF1-OSC_OUT 6 55 PC9
PG10-NRST 7 54 PC8
PC0 8 53 PC7
PC1 9 52 PC6
PC2 10 51 VDD
PC3 11
LQFP80 50 VSS
PA0 12 49 PD10
PA1 13 48 PD9
PA2 14 47 PD8
VSS 15 46 PB15
VDD 16 45 PB14
PA3 17 44 PB13
PA4 18 43 PB12
PA5 19 42 PB11
PA6 20 41 VDD
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
PC4
PC5
PB0
PB1
PB2
VSSA
VREF+

VSS
VDDA
PE7
PE8
PE9
PE10

PE12
PE13
PE14
PE15
PB10
PA7

PE11

MSv60826V1

1. The above figure shows the package top view.

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4.5 LQFP100 pinout description

Figure 9. STM32G484xE LQFP100 pinout

PB8-BOOT0

PC12

PC10
PC11

PA15
PA14
PA13
VDD
VSS

PD7
PD6
PD5
PD4
PD3
PD2
PD1
PD0
PE1
PE0
PB9

PB7
PB6
PB5
PB4
PB3
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
81
80
79
78
77
76
PE2 1 75 VDD
PE3 2 74 VSS
PE4 3 73 PA12
PE5 4 72 PA11
PE6 5 71 PA10
VBAT 6 70 PA9
PC13 7 69 PA8
PC14-OSC32_IN 8 68 PC9
PC15-OSC32_OUT 9 67 PC8
PF9 10 66 PC7
PF10 11 65 PC6
PF0-OSC_IN 12 64 VDD
PF1-OSC_OUT 13 LQFP100 63 VSS
PG10-NRST 14 62 PD15
PC0 15 61 PD14
PC1 16 60 PD13
PC2 17 59 PD12
PC3 18 58 PD11
PF2 19 57 PD10
PA0 20 56 PD9
PA1 21 55 PD8
PA2 22 54 PB15
VSS 23 53 PB14
VDD 24 52 PB13
PA3 25 51 PB12
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
PC4
PC5
PB0
PB1
PB2
VSSA
VREF+
VDDA
PE7
PE8
PE9
PE10

PE12

VSS
PE13
PE14
PE15
PB10

VDD
PA4
PA5
PA6
PA7

PE11

PB11

MSv42661V3

1. The above figure shows the package top view.

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4.6 LQFP128 pinout description

Figure 10. STM32G484xE LQFP128 pinout

PB8-BOOT0

PC12

PC10
PC11

PA15
PA14
VDD

VDD
VSS

VSS

PG9
PG8
PG7
PG6
PG5
PD7
PD6
PD5
PD4
PD3
PD2

PD1
PD0
PE1
PE0
PB9

PB7
PB6
PB5
PB4
PB3

PF6
128
127
126
125
124
123
122
121
120

109
108
107
106
105
104
103
102
101
100
99
98
97
119
118
117
116
115
114
113
112

110
111
PE2 1 96 PA13
PE3 2 95 VDD
PE4 3 94 VSS
PE5 4 93 PA12
PE6 5 92 PA11
VBAT 6 91 PA10
PC13 7 90 PA9
PC14-OSC32_IN 8 89 PA8
PC15-OSC32_OUT 9 88 PC9
PF3 10 87 PC8
PF4 11 86 PG4
VSS 12 85 PG3
VDD 13 84 PG2
PF5 14 83 PG1
PF7 15 82 PG0
PF8 16 81 PC7
PF9 17 LQFP128 80 PC6
PF10 18 79 VDD
PF0-OSC_IN 19 78 VSS
PF1-OSC_OUT 20 77 PD15
PG10-NRST 21 76 PD14
PC0 22 75 PD13
PC1 23 74 PD12
PC2 24 73 PD11
PC3 25 72 PD10
PF2 26 71 PD9
PA0 27 70 PD8
PA1 28 69 PB15
PA2 29 68 PB14
VSS 30 67 PB13
VDD 31 66 PB12
PA3 32 65 PB11
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
PC4
PC5
PB0
PB1
PB2
VSSA
VREF+
VREF+
VDDA
VSS
VDD

PF12
PF13
PF14
PF15
PE7
PE8
PE9

VSS
PE10

PE12
PE13
PE14
PE15
PB10

VDD
PA4
PA5
PA6
PA7

PF11

PE11

MSv42664V3

1. The above figure shows the package top view.

DS12983 Rev 5 53/235

79
Pinouts and pin description STM32G484xE

4.7 WLCSP81 pinout description

Figure 11. STM32G484xE WLCSP81 pinout
1 2 3 4 5 6 7 8 9

A VDD PA15 PC12 PD1 PB3 PB5 PB9 VSS VDD

B VSS PA13 PC10 PD0 PD2 PB6 PB8-BOOT0 PC13 VBAT

PC14-
C PA12 PA11 PA14 PC11 PC8 PB4 PB7 PC1
OSC32_IN

PC15-
D PA8 PC9 PA10 PA9 PC7 PA4 PA0 PG10-NRST
OSC32_OUT

E VDD PD11 PC6 PB15 PE12 PC4 PA1 PC0 PF0-OSC_IN

PF1-
F VSS PD10 PD9 PE15 PE9 PB0 PA5 PC2
OSC_OUT

G PD8 PB14 PB12 PE13 PE8 PB1 PA6 PA2 PC3

H PB13 PB11 PB10 PE11 PE7 VSSA PC5 PA3 VSS

J VDD VSS PE14 PE10 VDDA VREF+ PB2 PA7 VDD

MSv48046V1

1. The above figure shows the package top view.

4.8 TFBGA100 pinout description

Figure 12. STM32G484xE TFBGA100 pinout

1 2 3 4 5 6 7 8 9 10

A PE4 PB9 PB8-BOOT0 PB6 PB3 PD6 PD5 PD4 PD1 PC12

B PE5 PE3 PE1 PB7 PB5 PD7 PD2 PD0 PA15 PA14

PC14-
C PE6 PE2 PE0 PB4 PD3 PC11 PC10 PA12 PA11
OSC32_IN

PC15-
D VSS VBAT PC13 VDD VSS VDD PA13 PA10 PA9
OSC32_OUT

PF1-
E PF0-OSC_IN PF9 PF10 VSS VSS VSS PC8 PC9 PA8
OSC_OUT

F PC2 PC0 PG10-NRST PC1 VDD VSS VDD PD14 PC6 PC7

G PC3 PA1 PF2 PA0 PE7 PE12 PD10 PD9 PD13 PD15

H PA2 PA4 PA3 PB0 PE8 PE9 PE15 PB11 PB14 PD11

J PA5 PA6 PC5 PB2 VDDA PE11 PE14 PB10 PB13 PD12

K PA7 PC4 PB1 VSSA VREF+ PE10 PE13 PB12 PB15 PD8

MS48951V1

1. The above figure shows the package top view.

54/235 DS12983 Rev 5

STM32G484xE Pinouts and pin description

4.9 UFBGA121 pinout description

Figure 13. STM32G484xE UFBGA121 pinout
1 2 3 4 5 6 7 8 9 10 11

A PE4 PE2 VDD PB9 PB6 PB3 PD4 VDD PD1 PA15 PF6

B PE5 PE3 VSS PE0 PB5 PD7 PD3 VSS PD0 PA14 PA13

C PC13 VBAT PE6 PE1 PB7 PB4 PD2 PC11 PC10 VSS VDD

PC14- PC15-
D PF3 PF4 PB8-BOOT0 PD6 PC12 PA9 PA10 PA12 PA11
OSC32_IN OSC32_OUT

E VDD VSS PF5 PF7 PF8 PD5 PA8 PC9 PC8 PG4 PG3

PF1-
F PF0-OSC_IN PF9 PF10 PG10-NRST PD15 PG2 PG1 PG0 PC6 PC7
OSC_OUT

G PC1 PC0 PC2 PA0 PB1 PF15 PD11 PD12 PD13 PD14 VDD

H PC3 PF2 PA1 PC5 PF12 PF14 PE10 PB15 PD8 PD9 PD10

J VDD VSS PA2 PB0 PF11 PF13 PE9 PE13 PB12 PB14 PB13

K PA3 PA5 PA7 PB2 VSSA VSS PE8 PE12 PE14 VSS VDD

L PA4 PA6 PC4 VREF+ VDDA VDD PE7 PE11 PE15 PB10 PB11

MS52876V1

1. The above figure shows the package top view.

DS12983 Rev 5 55/235

79
Pinouts and pin description STM32G484xE

4.10 Pin definition

Table 11. Legend/abbreviations used in the pinout table
Name Abbreviation Definition

Unless otherwise specified in brackets below the pin name, the pin function during and after
Pin name
reset is the same as the actual pin name
S Supply pin
Pin type I Input only pin
I/O Input / output pin
FT 5 V tolerant I/O
TT 3.6 V tolerant I/O
B Dedicated BOOT0 pin
NRST Bidirectional reset pin with embedded weak pull-up resistor
Option for TT or FT I/Os
I/O structure
(1)
_a I/O, with Analog switch function supplied by VDDA
_c I/O, USB Type-C PD capable
_d I/O, USB Type-C PD Dead Battery function
_f(2) I/O, Fm+ capable
(3)
_u I/O, with USB function

Notes Unless otherwise specified by a note, all I/Os are set as floating inputs during and after reset

Alternate
Functions selected through GPIOx_AFR registers
functions
Pin functions
Additional
Functions directly selected/enabled through peripheral registers
functions

1. The related I/O structures in Table 12 are: FT_a, FT_fa, TT_a.

2. The related I/O structures in Table 12 are: FT_f, FT_fa.
3. The related I/O structures in Table 12 are FT_u.

56/235 DS12983 Rev 5

STM32G484xE Pinouts and pin description

Table 12. STM32G484xE pin definition

Pin Number

(function after

I/O structure
Pin name

Pin type
reset)(1)
UFQFPN48

UFBGA121
TFBGA100

Notes
Additional
WLCSP81

LPQF100

LPQF128
LQFP48

LQFP64

LQFP80
Alternate functions
functions

TRACECK,
TIM3_CH1,
SAI1_CK1, SPI4_SCK,
- - - - - C3 1 A2 1 PE2 I/O FT - TIM20_CH1, -
FMC_A23,
SAI1_MCLK_A,
EVENTOUT

TRACED0,
TIM3_CH2,
SPI4_NSS,
- - - - - B2 2 B2 2 PE3 I/O FT - TIM20_CH2, -
FMC_A19,
SAI1_SD_B,
EVENTOUT

TRACED1,
TIM3_CH3, SAI1_D2,
SPI4_NSS,
- - - - - A1 3 A1 3 PE4 I/O FT - TIM20_CH1N, -
FMC_A20,
SAI1_FS_A,
EVENTOUT

TRACED2,
TIM3_CH4,
SAI1_CK2,
SPI4_MISO,
- - - - - B1 4 B1 4 PE5 I/O FT - -
TIM20_CH2N,
FMC_A21,
SAI1_SCK_A,
EVENTOUT

TRACED3, SAI1_D1,
SPI4_MOSI,
TIM20_CH3N, WKUP3,
- - - - - C2 5 C3 5 PE6 I/O FT -
FMC_A22, RTC_TAMP3
SAI1_SD_A,
EVENTOUT

B9 1 1 1 1 D3 6 C2 6 VBAT S - - - -

TIM1_BKIN, WKUP2,
(2) TIM1_CH1N, RTC_TAMP1,
B8 2 2 2 2 D4 7 C1 7 PC13 I/O FT (3)
TIM8_CH4N, RTC_TS,
EVENTOUT RTC_OUT1

PC14- (2)
C9 3 3 3 3 C1 8 D1 8 I/O FT (3) EVENTOUT OSC32_IN
OSC32_IN

PC15- (2)
D9 4 4 4 4 D1 9 D2 9 I/O FT (3) EVENTOUT OSC32_OUT
OSC32_OUT

TIM20_CH4,
- - - - - - - D3 10 PF3 I/O FT_f - I2C3_SCL, -
FMC_A3, EVENTOUT

DS12983 Rev 5 57/235

79
Pinouts and pin description STM32G484xE

Table 12. STM32G484xE pin definition (continued)

Pin Number

(function after

I/O structure
Pin name

Pin type
reset)(1)
UFQFPN48

UFBGA121
TFBGA100

Notes
Additional
WLCSP81

LPQF100

LPQF128
LQFP48

LQFP64

LQFP80
Alternate functions
functions

COMP1_OUT,
TIM20_CH1N,
- - - - - - - D4 11 PF4 I/O FT_f - -
I2C3_SDA, FMC_A4,
EVENTOUT

F1 - - - - D2 - E2 12 VSS S - - - -

A9 - - - - D5 - E1 13 VDD S - - - -

TIM20_CH2N,
- - - - - - - E3 14 PF5 I/O FT - -
FMC_A5, EVENTOUT

TIM20_BKIN,
TIM5_CH2,
QUADSPI1_BK1_IO2,
- - - - - - - E4 15 PF7 I/O FT - -
FMC_A1,
SAI1_MCLK_B,
EVENTOUT

TIM20_BKIN2,
TIM5_CH3,
QUADSPI1_BK1_IO0,
- - - - - - - E5 16 PF8 I/O FT - -
FMC_A24,
SAI1_SCK_B,
EVENTOUT

TIM20_BKIN,
TIM15_CH1,
SPI2_SCK,
TIM5_CH4,
- - - - - E3 10 F3 17 PF9 I/O FT - -
QUADSPI1_BK1_IO1,
FMC_A25,
SAI1_FS_B,
EVENTOUT

TIM20_BKIN2,
TIM15_CH2,
SPI2_SCK,
- - - - - E4 11 F4 18 PF10 I/O FT - -
QUADSPI1_CLK,
FMC_A0, SAI1_D3,
EVENTOUT

I2C2_SDA,
SPI2_NSS/I2S2_WS, ADC1_IN10,
E9 5 5 5 5 E1 12 F1 19 PF0-OSC_IN I/O FT_fa -
TIM1_CH3N, OSC_IN
EVENTOUT

ADC2_IN10,
PF1- SPI2_SCK/I2S2_CK,
F9 6 6 6 6 E2 13 F2 20 I/O FT_a - COMP3_INM,
OSC_OUT EVENTOUT
OSC_OUT

NRST
D8 7 7 7 7 F3 14 F5 21 PG10-NRST I/O (4) - MCO, EVENTOUT NRST

58/235 DS12983 Rev 5

STM32G484xE Pinouts and pin description

Table 12. STM32G484xE pin definition (continued)

Pin Number

(function after

I/O structure
Pin name

Pin type
reset)(1)
UFQFPN48

UFBGA121
TFBGA100

Notes
Additional
WLCSP81

LPQF100

LPQF128
LQFP48

LQFP64

LQFP80
Alternate functions
functions

LPTIM1_IN1,
TIM1_CH1, ADC12_IN6,
E8 - - 8 8 F2 15 G2 22 PC0 I/O FT_a -
LPUART1_RX, COMP3_INM
EVENTOUT

LPTIM1_OUT,
TIM1_CH2,
LPUART1_TX, ADC12_IN7,
C8 - - 9 9 F4 16 G1 23 PC1 I/O TT_a -
QUADSPI1_BK2_IO0, COMP3_INP
SAI1_SD_A,
EVENTOUT

LPTIM1_IN2,
TIM1_CH3,
COMP3_OUT,
F8 - - 10 10 F1 17 G3 24 PC2 I/O FT_a - ADC12_IN8
TIM20_CH2,
QUADSPI1_BK2_IO1,
EVENTOUT

LPTIM1_ETR,
TIM1_CH4, SAI1_D1,
TIM1_BKIN2, ADC12_IN9,
G9 - - 11 11 G1 18 H1 25 PC3 I/O TT_a -
QUADSPI1_BK2_IO2, OPAMP5_VINP
SAI1_SD_A,
EVENTOUT

TIM20_CH3,
- - - - - G3 19 H2 26 PF2 I/O FT - I2C2_SMBA, FMC_A2, -
EVENTOUT

TIM2_CH1,
TIM5_CH1,
ADC12_IN1,
USART2_CTS,
COMP1_INM,
COMP1_OUT,
D7 8 8 12 12 G4 20 G4 27 PA0 I/O TT_a - COMP3_INP,
TIM8_BKIN,
RTC_TAMP2,WK
TIM8_ETR,
UP1
TIM2_ETR,
EVENTOUT

RTC_REFIN,
ADC12_IN2,
TIM2_CH2,
COMP1_INP,
TIM5_CH2,
E7 9 9 13 13 G2 21 H3 28 PA1 I/O TT_a - OPAMP1_VINP,
USART2_RTS_DE,
OPAMP3_VINP,
TIM15_CH1N,
OPAMP6_VINM
EVENTOUT

TIM2_CH3,
TIM5_CH3,
USART2_TX,
ADC1_IN3,
COMP2_OUT,
COMP2_INM,
G8 10 10 14 14 H1 22 J3 29 PA2 I/O FT_a - TIM15_CH1,
OPAMP1_VOUT,
QUADSPI1_BK1_NCS
WKUP4/LSCO
, LPUART1_TX,
UCPD1_FRSTX,
EVENTOUT

DS12983 Rev 5 59/235

79
Pinouts and pin description STM32G484xE

Table 12. STM32G484xE pin definition (continued)

Pin Number

(function after

I/O structure
Pin name

Pin type
reset)(1)
UFQFPN48

UFBGA121
TFBGA100

Notes
Additional
WLCSP81

LPQF100

LPQF128
LQFP48

LQFP64

LQFP80
Alternate functions
functions

H9 - - 15 15 D6 23 J2 30 VSS S - - - -

J9 - - 16 16 D7 24 J1 31 VDD S - - - -

TIM2_CH4,
TIM5_CH4,
ADC1_IN4,
SAI1_CK1,
COMP2_INP,
USART2_RX,
OPAMP1_VINM/
H8 11 11 17 17 H3 25 K1 32 PA3 I/O TT_a - TIM15_CH2,
OPAMP
QUADSPI1_CLK,
1_VINP,
LPUART1_RX,
OPAMP5_VINM
SAI1_MCLK_A,
EVENTOUT

TIM3_CH2,
SPI1_NSS,
ADC2_IN17,
SPI3_NSS/I2S3_WS,
D6 12 12 18 18 H2 26 L1 33 PA4 I/O TT_a - DAC1_OUT1,
USART2_CK,
COMP1_INM
SAI1_FS_B,
EVENTOUT

TIM2_CH1,
ADC2_IN13,
TIM2_ETR,
DAC1_OUT2,
F7 13 13 19 19 J1 27 K2 34 PA5 I/O TT_a - SPI1_SCK,
COMP2_INM,
UCPD1_FRSTX,
OPAMP2_VINM
EVENTOUT

TIM16_CH1,
TIM3_CH1,
TIM8_BKIN,
SPI1_MISO, ADC2_IN3,
G7 14 14 20 20 J2 28 L2 35 PA6 I/O TT_a - TIM1_BKIN, DAC2_OUT1,
COMP1_OUT, OPAMP2_VOUT
QUADSPI1_BK1_IO3,
LPUART1_CTS,
EVENTOUT

TIM17_CH1,
TIM3_CH2,
TIM8_CH1N,
ADC2_IN4,
SPI1_MOSI,
COMP2_INP,
J8 15 15 21 21 K1 29 K3 36 PA7 I/O TT_a - TIM1_CH1N,
OPAMP1_VINP,
COMP2_OUT,
OPAMP2_VINP
QUADSPI1_BK1_IO2,
UCPD1_FRSTX,
EVENTOUT

TIM1_ETR, I2C2_SCL,
USART1_TX,
E6 16 - 22 22 K2 30 L3 37 PC4 I/O FT_fa - ADC2_IN5
QUADSPI1_BK2_IO3,
EVENTOUT

60/235 DS12983 Rev 5

STM32G484xE Pinouts and pin description

Table 12. STM32G484xE pin definition (continued)

Pin Number

(function after

I/O structure
Pin name

Pin type
reset)(1)
UFQFPN48

UFBGA121
TFBGA100

Notes
Additional
WLCSP81

LPQF100

LPQF128
LQFP48

LQFP64

LQFP80
Alternate functions
functions

TIM15_BKIN,
SAI1_D3, ADC2_IN11,
TIM1_CH4N, OPAMP1_VINM,
H7 - - 23 23 J3 31 H4 38 PC5 I/O TT_a -
USART1_RX, OPAMP2_VINM,
HRTIM1_EEV10, WKUP5
EVENTOUT

TIM3_CH3,
TIM8_CH2N, ADC3_IN12/
TIM1_CH2N, ADC1_IN15,
F6 17 16 24 24 H4 32 J4 39 PB0 I/O TT_a - QUADSPI1_BK1_IO1, COMP4_INP,
HRTIM1_FLT5, OPAMP2_VINP,
UCPD1_FRSTX, OPAMP3_VINP
EVENTOUT

TIM3_CH4,
TIM8_CH3N,
ADC3_IN1/
TIM1_CH3N,
ADC1_IN12,
COMP4_OUT,
G6 18 17 25 25 K3 33 G5 40 PB1 I/O TT_a - COMP1_INP,
QUADSPI1_BK1_IO0,
OPAMP3_VOUT,
LPUART1_RTS_DE,H
OPAMP6_VINM
RTIM1_SCOUT,
EVENTOUT

RTC_OUT2,
LPTIM1_OUT,
TIM5_CH1,
ADC2_IN12,
TIM20_CH1,
J7 19 18 26 26 J4 34 K4 41 PB2 I/O TT_a - COMP4_INM,
I2C3_SMBA,
OPAMP3_VINM
QUADSPI1_BK2_IO1,
HRTIM1_SCIN,
EVENTOUT

H6 - 19 27 27 K4 35 K5 42 VSSA S - - - -

J6 20 20 28 28 K5 36 L4 43 VREF+ S - - - VREFBUF_OUT

- - - - - - - - 44 VREF+ S - - - VREFBUF_OUT

J5 21 21 29 29 J5 37 L5 45 VDDA S - - - -

H9 - - - - E5 - K6 46 VSS S - - - -

J1 - - - - F5 - L6 47 VDD S - - - -

TIM20_ETR,
- - - - - - - J5 48 PF11 I/O FT - FMC_NE4, -
EVENTOUT

TIM20_CH1, FMC_A6,
- - - - - - - H5 49 PF12 I/O FT - -
EVENTOUT

TIM20_CH2,
- - - - - - - J6 50 PF13 I/O FT - I2C4_SMBA, FMC_A7, -
EVENTOUT

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79
Pinouts and pin description STM32G484xE

Table 12. STM32G484xE pin definition (continued)

Pin Number

(function after

I/O structure
Pin name

Pin type
reset)(1)
UFQFPN48

UFBGA121
TFBGA100

Notes
Additional
WLCSP81

LPQF100

LPQF128
LQFP48

LQFP64

LQFP80
Alternate functions
functions

TIM20_CH3,
- - - - - - - H6 51 PF14 I/O FT_f - I2C4_SCL, FMC_A8, -
EVENTOUT

TIM20_CH4,
- - - - - - - G6 52 PF15 I/O FT_f - I2C4_SDA, FMC_A9, -
EVENTOUT

TIM1_ETR, FMC_D4,
ADC3_IN4,
H5 - - - 30 G5 38 L7 53 PE7 I/O TT_a - SAI1_SD_B,
COMP4_INP
EVENTOUT

TIM5_CH3,
TIM1_CH1N,
ADC345_IN6,
G5 - - - 31 H5 39 K7 54 PE8 I/O FT_a - FMC_D5,
COMP4_INM
SAI1_SCK_B,
EVENTOUT

TIM5_CH4,
TIM1_CH1, FMC_D6,
F5 - - - 32 H6 40 J7 55 PE9 I/O FT_a - ADC3_IN2
SAI1_FS_B,
EVENTOUT

TIM1_CH2N,
QUADSPI1_CLK,
J4 - - - 33 K6 41 H7 56 PE10 I/O FT_a - FMC_D7, ADC345_IN14
SAI1_MCLK_B,
EVENTOUT

TIM1_CH2,
SPI4_NSS,
H4 - - - 34 J6 42 L8 57 PE11 I/O FT_a - QUADSPI1_BK1_NCS ADC345_IN15
, FMC_D8,
EVENTOUT

TIM1_CH3N,
SPI4_SCK,
E5 - - - 35 G6 43 K8 58 PE12 I/O FT_a - ADC345_IN16
QUADSPI1_BK1_IO0,
FMC_D9, EVENTOUT

TIM1_CH3,
SPI4_MISO,
G4 - - - 36 K7 44 J8 59 PE13 I/O FT_a - QUADSPI1_BK1_IO1, ADC3_IN3
FMC_D10,
EVENTOUT

TIM1_CH4,
SPI4_MOSI,
TIM1_BKIN2,
J3 - - - 37 J7 45 K9 60 PE14 I/O FT_a - ADC4_IN1
QUADSPI1_BK1_IO2,
FMC_D11,
EVENTOUT

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STM32G484xE Pinouts and pin description

Table 12. STM32G484xE pin definition (continued)

Pin Number

(function after

I/O structure
Pin name

Pin type
reset)(1)
UFQFPN48

UFBGA121
TFBGA100

Notes
Additional
WLCSP81

LPQF100

LPQF128
LQFP48

LQFP64

LQFP80
Alternate functions
functions

TIM1_BKIN,
TIM1_CH4N,
USART3_RX,
F4 - - - 38 H7 46 L9 61 PE15 I/O FT_a - ADC4_IN2
QUADSPI1_BK1_IO3,
FMC_D12,
EVENTOUT

TIM2_CH3,
USART3_TX,
LPUART1_RX,
COMP5_INM,
QUADSPI1_CLK,
H3 22 22 30 39 J8 47 L10 62 PB10 I/O TT_a - OPAMP3_VINM,
TIM1_BKIN,
OPAMP4_VINM
HRTIM1_FLT3,
SAI1_SCK_A,
EVENTOUT

J2 - 23 31 40 E6 48 K10 63 VSS S - - - -
J1 23 24 32 41 F7 49 K11 64 VDD S - - - -

TIM2_CH4,
USART3_RX, ADC12_IN14,
LPUART1_TX, COMP6_INP,
H2 24 25 33 42 H8 50 L11 65 PB11 I/O TT_a -
QUADSPI1_BK1_NCS OPAMP4_VINP,
, HRTIM1_FLT4, OPAMP6_VOUT
EVENTOUT

TIM5_ETR,
I2C2_SMBA,
SPI2_NSS/I2S2_WS, ADC4_IN3/
TIM1_BKIN, ADC1_IN11,
G3 25 26 34 43 K8 51 J9 66 PB12 I/O TT_a - USART3_CK, COMP7_INM,
LPUART1_RTS_DE, OPAMP4_VOUT,
FDCAN2_RX, OPAMP6_VINP
HRTIM1_CHC1,
EVENTOUT

SPI2_SCK/I2S2_CK,
TIM1_CH1N, ADC3_IN5,
USART3_CTS, COMP5_INP,
H1 26 27 35 44 J9 52 J11 67 PB13 I/O TT_a - LPUART1_CTS, OPAMP3_VINP,
FDCAN2_TX, OPAMP4_VINP,
HRTIM1_CHC2, OPAMP6_VINP
EVENTOUT

TIM15_CH1,
SPI2_MISO, ADC4_IN4/
TIM1_CH2N, ADC1_IN5,
G2 27 28 36 45 H9 53 J10 68 PB14 I/O TT_a - USART3_RTS_DE, COMP7_INP,
COMP4_OUT, OPAMP2_VINP,
HRTIM1_CHD1, OPAMP5_VINP
EVENTOUT

DS12983 Rev 5 63/235

79
Pinouts and pin description STM32G484xE

Table 12. STM32G484xE pin definition (continued)

Pin Number

(function after

I/O structure
Pin name

Pin type
reset)(1)
UFQFPN48

UFBGA121
TFBGA100

Notes
Additional
WLCSP81

LPQF100

LPQF128
LQFP48

LQFP64

LQFP80
Alternate functions
functions

RTC_REFIN,
TIM15_CH2,
TIM15_CH1N, ADC4_IN5/
COMP3_OUT, ADC2_IN15,
E4 28 29 37 46 K9 54 H8 69 PB15 I/O TT_a -
TIM1_CH3N, COMP6_INM,
SPI2_MOSI/I2S2_SD, OPAMP5_VINM
HRTIM1_CHD2,
EVENTOUT

USART3_TX, ADC4_IN12/
G1 - - - 47 K10 55 H9 70 PD8 I/O TT_a - FMC_D13, ADC5_IN12,
EVENTOUT OPAMP4_VINM

USART3_RX, ADC4_IN13/
F3 - - - 48 G8 56 H10 71 PD9 I/O TT_a - FMC_D14, ADC5_IN13,
EVENTOUT OPAMP6_VINP

USART3_CK,
ADC345_IN7,
F2 - - - 49 G7 57 H11 72 PD10 I/O FT_a - FMC_D15,
COMP6_INM
EVENTOUT

TIM5_ETR,
I2C4_SMBA, ADC345_IN8,
E2 - - - - H10 58 G7 73 PD11 I/O TT_a - USART3_CTS, COMP6_INP,
FMC_A16, OPAMP4_VINP
EVENTOUT

TIM4_CH1,
ADC345_IN9,
USART3_RTS_DE,
- - - - - J10 59 G8 74 PD12 I/O TT_a - COMP5_INP,
FMC_A17,
OPAMP5_VINP
EVENTOUT

TIM4_CH2, FMC_A18, ADC345_IN10,

- - - - - G9 60 G9 75 PD13 I/O FT_a -
EVENTOUT COMP5_INM

ADC345_IN11,
TIM4_CH3,
- - - - - F8 61 G10 76 PD14 I/O TT_a - COMP7_INP,
FMC_D0, EVENTOUT
OPAMP2_VINP

TIM4_CH4,
- - - - - G10 62 F6 77 PD15 I/O FT_a - SPI2_NSS, COMP7_INM
FMC_D1, EVENTOUT

B1 - - - 50 E7 63 - 78 VSS S - - - -

E1 - - - 51 - 64 G11 79 VDD S - - - -

TIM3_CH1,
HRTIM1_EEV10,
TIM8_CH1,
I2S2_MCK,
E3 29 - 38 52 F9 65 F10 80 PC6 I/O FT_f - -
COMP6_OUT,
I2C4_SCL,
HRTIM1_CHF1,
EVENTOUT

64/235 DS12983 Rev 5

STM32G484xE Pinouts and pin description

Table 12. STM32G484xE pin definition (continued)

Pin Number

(function after

I/O structure
Pin name

Pin type
reset)(1)
UFQFPN48

UFBGA121
TFBGA100

Notes
Additional
WLCSP81

LPQF100

LPQF128
LQFP48

LQFP64

LQFP80
Alternate functions
functions

TIM3_CH2,
HRTIM1_FLT5,
TIM8_CH2,
I2S3_MCK,
D5 - - 39 53 F10 66 F11 81 PC7 I/O FT_f - -
COMP5_OUT,
I2C4_SDA,
HRTIM1_CHF2,
EVENTOUT

TIM20_CH1N,
- - - - - - - F9 82 PG0 I/O FT - FMC_A10, -
EVENTOUT

TIM20_CH2N,
- - - - - - - F8 83 PG1 I/O FT - FMC_A11, -
EVENTOUT

TIM20_CH3N,
- - - - - - - F7 84 PG2 I/O FT - SPI1_SCK, FMC_A12, -
EVENTOUT

TIM20_BKIN,
I2C4_SCL,
SPI1_MISO,
- - - - - - - E11 85 PG3 I/O FT_f - -
TIM20_CH4N,
FMC_A13,
EVENTOUT

TIM20_BKIN2,
I2C4_SDA,
- - - - - - - E10 86 PG4 I/O FT_f - SPI1_MOSI, -
FMC_A14,
EVENTOUT

TIM3_CH3,
HRTIM1_CHE1,
TIM8_CH3,
C5 - - 40 54 E8 67 E9 87 PC8 I/O FT_f - TIM20_CH3, -
COMP7_OUT,
I2C3_SCL,
EVENTOUT

TIM3_CH4,
HRTIM1_CHE2,
TIM8_CH4, I2SCKIN,
D2 - - 41 55 E9 68 E8 88 PC9 I/O FT_f - -
TIM8_BKIN2,
I2C3_SDA,
EVENTOUT

DS12983 Rev 5 65/235

79
Pinouts and pin description STM32G484xE

Table 12. STM32G484xE pin definition (continued)

Pin Number

(function after

I/O structure
Pin name

Pin type
reset)(1)
UFQFPN48

UFBGA121
TFBGA100

Notes
Additional
WLCSP81

LPQF100

LPQF128
LQFP48

LQFP64

LQFP80
Alternate functions
functions

MCO, I2C3_SCL,
I2C2_SDA,
I2S2_MCK,
TIM1_CH1,
USART1_CK,
COMP7_OUT, ADC5_IN1,
D1 30 30 42 56 E10 69 E7 89 PA8 I/O FT_a -
TIM4_ETR, OPAMP5_VOUT
FDCAN3_RX,
SAI1_CK2,
HRTIM1_CHA1,
SAI1_SCK_A,
EVENTOUT

I2C3_SMBA,
I2C2_SCL, I2S3_MCK,
TIM1_CH2,
USART1_TX,
OMP5_OUT, ADC5_IN2,
D4 31 31 43 57 D10 70 D8 90 PA9 I/O FT_fda -
TIM15_BKIN, UCPD1_DBCC1
TIM2_CH3,
HRTIM1_CHA2,
SAI1_FS_A,
EVENTOUT

TIM17_BKIN,
USB_CRS_SYNC,
I2C2_SMBA,
SPI2_MISO,
TIM1_CH3,
USART1_RX, UCPD1_DBCC2,
D3 32 32 44 58 D9 71 D9 91 PA10 I/O FT_fda -
COMP6_OUT, PVD_IN
TIM2_CH4,
TIM8_BKIN, SAI1_D1,
HRTIM1_CHB1,
SAI1_SD_A,
EVENTOUT

SPI2_MOSI/I2S2_SD,
TIM1_CH1N,
USART1_CTS,
COMP1_OUT,
FDCAN1_RX,
C2 33 33 45 59 C10 72 D11 92 PA11 I/O FT_u - USB_DM
TIM4_CH1,
TIM1_CH4,
TIM1_BKIN2,
HRTIM1_CHB2,
EVENTOUT

66/235 DS12983 Rev 5

STM32G484xE Pinouts and pin description

Table 12. STM32G484xE pin definition (continued)

Pin Number

(function after

I/O structure
Pin name

Pin type
reset)(1)
UFQFPN48

UFBGA121
TFBGA100

Notes
Additional
WLCSP81

LPQF100

LPQF128
LQFP48

LQFP64

LQFP80
Alternate functions
functions

TIM16_CH1, I2SCKIN,
TIM1_CH2N,
USART1_RTS_DE,
COMP2_OUT,
C1 34 34 46 60 C9 73 D10 93 PA12 I/O FT_u - FDCAN1_TX, USB_DP
TIM4_CH2,
TIM1_ETR,
HRTIM1_FLT1,
EVENTOUT

A8 - 35 47 61 F6 74 C10 94 VSS S - - - -

A1 35 36 48 62 - 75 C11 95 VDD S - - - -

SWDIO-JTMS,
TIM16_CH1N,
I2C4_SCL, I2C1_SCL,
(5) IR_OUT,
B2 36 37 49 63 D8 76 B11 96 PA13 I/O FT_f -
USART3_CTS,
TIM4_CH3,
SAI1_SD_B,
EVENTOUT

TIM5_ETR,
TIM4_CH4,
SAI1_SD_B,
- - - - - - - A11 97 PF6 I/O FT_f - I2C2_SCL, TIM5_CH1, -
USART3_RTS,
QUADSPI1_BK1_IO3,
EVENTOUT

SWCLK-JTCK,
LPTIM1_OUT,
I2C4_SMBA,
I2C1_SDA,
C3 37 38 50 64 B10 77 B10 98 PA14 I/O FT_f (5) TIM8_CH2, -
TIM1_BKIN,
USART2_TX,
SAI1_FS_B,
EVENTOUT

JTDI, TIM2_CH1,
TIM8_CH1, I2C1_SCL,
SPI1_NSS,
SPI3_NSS/I2S3_WS,
USART2_RX,
A2 38 39 51 65 B9 78 A10 99 PA15 I/O FT_f (5) UART4_RTS_DE, -
TIM1_BKIN,
FDCAN3_TX,
HRTIM1_FLT2,
TIM2_ETR,
EVENTOUT

DS12983 Rev 5 67/235

79
Pinouts and pin description STM32G484xE

Table 12. STM32G484xE pin definition (continued)

Pin Number

(function after

I/O structure
Pin name

Pin type
reset)(1)
UFQFPN48

UFBGA121
TFBGA100

Notes
Additional
WLCSP81

LPQF100

LPQF128
LQFP48

LQFP64

LQFP80
Alternate functions
functions

TIM8_CH1N,
UART4_TX,
SPI3_SCK/I2S3_CK,
B3 39 - 52 66 C8 79 C9 100 PC10 I/O FT - -
USART3_TX,
HRTIM1_FLT6,
EVENTOUT

HRTIM1_EEV2,
TIM8_CH2N,
UART4_RX,
C4 40 - 53 67 C7 80 C8 101 PC11 I/O FT_f - SPI3_MISO, -
USART3_RX,
I2C3_SDA,
EVENTOUT

TIM5_CH2,
HRTIM1_EEV1,
TIM8_CH3N,
UART5_TX,
A3 - - 54 68 A10 81 D7 102 PC12 I/O FT - -
SPI3_MOSI/I2S3_SD,
USART3_CK,
UCPD1_FRSTX,
EVENTOUT

TIM20_ETR,
SPI1_NSS,
- - - - - - - - 103 PG5 I/O FT - LPUART1_CTS, -
FMC_A15,
EVENTOUT

TIM20_BKIN,
I2C3_SMBA,
- - - - - - - - 104 PG6 I/O FT - -
LPUART1_RTS_DE,
FMC_INT, EVENTOUT

SAI1_CK1, I2C3_SCL,
LPUART1_TX,
- - - - - - - - 105 PG7 I/O FT_f - FMC_INT, -
SAI1_MCLK_A,
EVENTOUT

I2C3_SDA,
LPUART1_RX,
- - - - - - - - 106 PG8 I/O FT_f - -
FMC_NE3,
EVENTOUT

SPI3_SCK,
USART1_TX,
- - - - - - - - 107 PG9 I/O FT - FMC_NCE/FMC_NE2, -
TIM15_CH1N,
EVENTOUT

TIM8_CH4N,
B4 - - - 69 B8 82 B9 108 PD0 I/O FT - FDCAN1_RX, -
FMC_D2, EVENTOUT

68/235 DS12983 Rev 5

STM32G484xE Pinouts and pin description

Table 12. STM32G484xE pin definition (continued)

Pin Number

(function after

I/O structure
Pin name

Pin type
reset)(1)
UFQFPN48

UFBGA121
TFBGA100

Notes
Additional
WLCSP81

LPQF100

LPQF128
LQFP48

LQFP64

LQFP80
Alternate functions
functions

TIM8_CH4,
TIM8_BKIN2,
A4 - - - 70 A9 83 A9 109 PD1 I/O FT - -
FDCAN1_TX,
FMC_D3, EVENTOUT

- - - - - - - B8 110 VSS S - - - -

A1 - - - - - - A8 111 VDD S - - - -

TIM3_ETR,
TIM8_BKIN,
B5 - - 55 71 B7 84 C7 112 PD2 I/O FT - -
UART5_RX,
EVENTOUT

TIM2_CH1/
TIM2_ETR,
USART2_CTS,
- - - - - C6 85 B7 113 PD3 I/O FT - -
QUADSPI1_BK2_NCS
, FMC_CLK,
EVENTOUT

TIM2_CH2,
USART2_RTS_DE,
- - - - - A8 86 A7 114 PD4 I/O FT - QUADSPI1_BK2_IO0, -
FMC_NOE,
EVENTOUT

USART2_TX,
QUADSPI1_BK2_IO1,
- - - - - A7 87 E6 115 PD5 I/O FT - -
FMC_NWE,
EVENTOUT

TIM2_CH4, SAI1_D1,
USART2_RX,
QUADSPI1_BK2_IO2,
- - - - - A6 88 D6 116 PD6 I/O FT - -
FMC_NWAIT,
SAI1_SD_A,
EVENTOUT

TIM2_CH3,
USART2_CK,
- - - - - B6 89 B6 117 PD7 I/O FT - QUADSPI1_BK2_IO3, -
FMC_NCE/FMC_NE1,
EVENTOUT

DS12983 Rev 5 69/235

79
Pinouts and pin description STM32G484xE

Table 12. STM32G484xE pin definition (continued)

Pin Number

(function after

I/O structure
Pin name

Pin type
reset)(1)
UFQFPN48

UFBGA121
TFBGA100

Notes
Additional
WLCSP81

LPQF100

LPQF128
LQFP48

LQFP64

LQFP80
Alternate functions
functions

JTDO-TRACESWO,
TIM2_CH2,
TIM4_ETR,
UCPD1_CRS_SYNC,
TIM8_CH1N,
SPI1_SCK,
(5) SPI3_SCK/I2S3_CK,
A5 41 40 56 72 A5 90 A6 118 PB3 I/O FT -
USART2_TX,
TIM3_ETR,
FDCAN3_RX,
HRTIM1_SCOUT,
HRTIM1_EEV9,
SAI1_SCK_B,
EVENTOUT

JTRST, TIM16_CH1,
TIM3_CH1,
TIM8_CH2N,
SPI1_MISO,
SPI3_MISO,
(5) USART2_RX,
C6 42 41 57 73 C5 91 C6 119 PB4 I/O FT_c (6) UCPD1_CC2
UART5_RTS_DE,
TIM17_BKIN,
FDCAN3_TX,
HRTIM1_EEV7,
SAI1_MCLK_B,
EVENTOUT

TIM16_BKIN,
TIM3_CH2,
TIM8_CH3N,
I2C1_SMBA,
SPI1_MOSI,
SPI3_MOSI/I2S3_SD,
USART2_CK,
A6 43 42 58 74 B5 92 B5 120 PB5 I/O FT_f - I2C3_SDA, -
FDCAN2_RX,
TIM17_CH1,
LPTIM1_IN1,
SAI1_SD_B,
HRTIM1_EEV6,
UART5_CTS,
EVENTOUT

70/235 DS12983 Rev 5

STM32G484xE Pinouts and pin description

Table 12. STM32G484xE pin definition (continued)

Pin Number

(function after

I/O structure
Pin name

Pin type
reset)(1)
UFQFPN48

UFBGA121
TFBGA100

Notes
Additional
WLCSP81

LPQF100

LPQF128
LQFP48

LQFP64

LQFP80
Alternate functions
functions

TIM16_CH1N,
TIM4_CH1,
TIM8_CH1,
TIM8_ETR,
USART1_TX,
COMP4_OUT,
(6)
B6 44 43 59 75 A4 93 A5 121 PB6 I/O FT_c FDCAN2_TX, UCPD1_CC1
TIM8_BKIN2,
LPTIM1_ETR,
HRTIM1_SCIN,
HRTIM1_EEV4,
SAI1_FS_B,
EVENTOUT

TIM17_CH1N,
TIM4_CH2,
I2C4_SDA, I2C1_SDA,
TIM8_BKIN,
USART1_RX,
COMP3_OUT,
C7 45 44 60 76 B4 94 C5 122 PB7 I/O FT_f - -
TIM3_CH4,
LPTIM1_IN2,
FMC_NL,
HRTIM1_EEV3,
UART4_CTS,
EVENTOUT

TIM16_CH1,
TIM4_CH3,
SAI1_CK1,
I2C1_SCL,
USART3_RX,
(7) COMP1_OUT,
B7 46 45 61 77 A3 95 D5 123 PB8-BOOT0 I/O FT_f -
FDCAN1_RX,
TIM8_CH2,
TIM1_BKIN,
HRTIM1_EEV8,
SAI1_MCLK_A,
EVENTOUT

TIM17_CH1,
TIM4_CH4,
SAI1_D2,
I2C1_SDA,
IR_OUT, USART3_TX,
COMP2_OUT,
A7 47 46 62 78 A2 96 A4 124 PB9 I/O FT_f - -
FDCAN1_TX,
TIM8_CH3,
TIM1_CH3N,
HRTIM1_EEV5,
SAI1_FS_A,
EVENTOUT

DS12983 Rev 5 71/235

79
 Pinouts and pin description STM32G484xE

Table 12. STM32G484xE pin definition (continued)

Pin Number

(function after

I/O structure
Pin name

Pin type
reset)(1)
UFQFPN48

UFBGA121
TFBGA100

Notes
Additional
WLCSP81

LPQF100

LPQF128
LQFP48

LQFP64

LQFP80
Alternate functions
functions

TIM4_ETR,
TIM20_CH4N,
TIM16_CH1,
- - - - - C4 97 B4 125 PE0 I/O FT - TIM20_ETR, -
USART1_TX,
FMC_NBL0,
EVENTOUT

TIM17_CH1,
TIM20_CH4,
- - - - - B3 98 C4 126 PE1 I/O FT - USART1_RX, -
FMC_NBL1,
EVENTOUT

- - 47 63 79 - 99 B3 127 VSS S - - - -

A9 48 48 64 80 - 100 A3 128 VDD S - - - -

1. Function availability depends on the chosen device.

2. PC13, PC14 and PC15 are supplied through the power switch. Since the switch only sinks a limited amount of current (3 mA),
the use of GPIOs PC13 to PC15 in output mode is limited:
- The speed should not exceed 2 MHz with a maximum load of 30 pF
- These GPIOs must not be used as current sources (e.g. to drive an LED).
3. After a backup domain power-up, PC13, PC14 and PC15 operate as GPIOs. Their function then depends on the content of
the RTC registers which are not reset by the system reset. For details on how to manage these GPIOs, refer to the Backup
domain and RTC register descriptions in the reference manual RM0440 "STM32G4 Series advanced Arm®-based 32-bit
MCUs”.
4. PG10-NRST pin is FT tolerant if it is configured as PG10 GPIO by option bytes except for the startup time until option bytes
are loaded.
5. After reset, these pins are configured as JTAG/SW debug alternate functions, and the internal pull-up on PA15, PA13, PB4
pins and the internal pull-down on PA14 pin are activated.
6. After reset, a pull-down resistor (Rd = 5.1kΩ from UCPD peripheral) can be activated on PB6, PB4 (UCPD1_CC1,
UCPD1_CC2). The pull-down on PB6 (UCPD1_CC1) is activated by high level on PA9 (UCPD1_DBCC1). The pull-down on
PB4 (UCPD1_CC2) is activated by high level on PA10 (UCPD1_DBCC2). This pull-down control (dead battery support on
UCPD peripheral) can be disabled by setting bit UCPD1_DBDIS=1 in the PWR_CR3 register. PB4, PB6 have UCPD_CC
functionality which implements an internal pull-down resistor (5.1kΩ) which is controlled by the voltage on the UCPD_DBCC
pin (PA10, PA9). A high level on the UCPD_DBCC pin activates the pull-down on the UCPD_CC pin. The pull-down effect on
the CC lines can be removed by using the bit UCPD1_DBDIS =1 (USB Type-C and power delivery dead battery disable) in
the PWR_CR3 register.
7. It is recommended to set PB8 in another mode than analog mode after startup to limit consumption if the pin is left
unconnected.

72/235 DS12983 Rev 5

 4.11 Alternate functions

STM32G484xE
Table 13. Alternate function
AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15

QUADSPI1
QUADSPI1/ I2C3/4/UAR
Port I2C1/3/ /SPI1/2/3/4/ QUADSPI1/ FDCAN/T UART4/5/
LPTIM1/ I2C3/4/SAI1/US I2C1/2/3/ USART1/2/3 T4/5/LPUA QUADSPI1/ LPTIM1/ FMC/LPUART1 SAI1SAI1/HR
I2C4/ TIM1/2/3/4/5/8/ I2S2/3/I2C4/ SPI2/3/I2S2 IM1/8/15/ SAI1/TIM
TIM2/5/ B/HRTIM1/ 4/TIM1/8/ /FDCAN/CO RT1/COMP TIM2/3/4/8/1 TIM1/8/F /SAI1/HRTIM1/ TIM1/OPAMP EVENT
SYS_AF 20/15/ UART4/5/ /3/TIM1/5/8/ FDCAN1/ 2/15/
15/16/17 TIM8/20/15/ 16/17 MP7/5/6 1/2/7/4/5/6/ 7 DCAN1/3 TIM1 2
COMP1 TIM8/ 20/Infrared 2 UCPD1
COMP3 3
Infrared

USART2_ COMP1 TIM8_ TIM2_ EVENT

PA0 - TIM2_CH1 TIM5_CH1 - - - - TIM8_ETR - - -
CTS _OUT BKIN ETR OUT

RTC_ USART2_ TIM15_ EVENT

PA1 TIM2_CH2 TIM5_CH2 - - - - - - - - - -
REFIN RTS_DE CH1N OUT

USART2_ COMP2 TIM15_ QUADSPI1_ UCPD1_ EVENT

PA2 - TIM2_CH3 TIM5_CH3 - - - - - LPUART1_TX -
TX _OUT CH1 BK1_NCS FRSTX OUT

USART2_ TIM15_ QUADSPI1_ SAI1_MCLK_ EVENT

PA3 - TIM2_CH4 TIM5_CH4 SAI1_CK1 - - - - - LPUART1_RX -
RX CH2 CLK A OUT

SPI3_NSS/ USART2_ EVENT

DS12983 Rev 5

PA4 - - TIM3_CH2 - - SPI1_NSS - - - - - SAI1_FS_B -

I2S3_WS CK OUT

UCPD1_ EVENT
PA5 - TIM2_CH1 TIM2_ETR - - SPI1_SCK - - - - - - - -
FRSTX OUT

TIM8_ COMP1 QUADSPI1_ LPUART1_ EVENT

PA6 - TIM16_CH1 TIM3_CH1 - SPI1_MISO TIM1_BKIN - - - - -
BKIN _OUT BK1_IO3 CTS OUT

TIM8_ TIM1_ COMP2_ QUADSPI1_ UCPD1_ EVENT

PA7 - TIM17_CH1 TIM3_CH2 - SPI1_MOSI - - - - -
CH1N CH1N OUT BK1_IO2 FRSTX OUT
Port A

I2C2_ USART1_ COMP7 FDCAN3 HRTIM1_ SAI1_SC EVENT

PA8 MCO - I2C3_SCL - I2S2_MCK TIM1_CH1 - TIM4_ETR SAI1_CK2
SDA CK _OUT _RX CHA1 K_A OUT

I2C2_ USART1_ COMP5 TIM15_ HRTIM1_ SAI1_FS EVENT

PA9 - - I2C3_SMBA - I2S3_MCK TIM1_CH2 TIM2_CH3 - -
SCL TX _OUT BKIN CHA2 _A OUT

USB_ I2C2_ USART1_ COMP6 TIM8_ HRTIM1_ SAI1_SD EVENT

PA10 - TIM17_BKIN - SPI2_MISO TIM1_CH3 - TIM2_CH4 SAI1_D1
CRS_SYNC SMBA RX _OUT BKIN CHB1 _A OUT

Pinouts and pin description

SPI2_MOSI/ TIM1_ USART1_ COMP1 FDCAN1 TIM1_ HRTIM1_ EVENT
PA11 - - - - - TIM4_CH1 TIM1_BKIN2 -
I2S2_SD CH1N CTS _OUT _RX CH4 CHB2 OUT

TIM1_ USART1_ COMP2 FDCAN1 TIM1_ HRTIM1_ EVENT

PA12 - TIM16_CH1 - - - I2SCKIN TIM4_CH2 - -
CH2N RTS_DE _OUT _TX ETR FLT1 OUT

SWDIO- I2C1_ USART3_ EVENT

PA13 TIM16_CH1N - I2C4_SCL IR_OUT - - - TIM4_CH3 - - SAI1_SD_B -
JTMS SCL CTS OUT

SWCLK- I2C1_ TIM1_ USART2_ EVENT

PA14 LPTIM1_OUT - I2C4_SMBA TIM8_CH2 - - - - - SAI1_FS_B -
JTCK SDA BKIN TX OUT

FDCAN3
I2C1_ SPI3_NSS/ USART2_ UART4 TIM1_ HRTIM1_ TIM2_ EVENT
PA15 JTDI TIM2_CH1 TIM8_CH1 - SPI1_NSS - _ -
SCL I2S3_WS RX _RTS_DE BKIN FLT2 ETR OUT
TX
73/235
 Table 13. Alternate function (continued)
74/235

Pinouts and pin description

AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15

QUADSPI1
QUADSPI1/ I2C3/4/UAR
Port I2C1/3/ /SPI1/2/3/4/ QUADSPI1/ FDCAN/T UART4/5/
LPTIM1/ I2C3/4/SAI1/US I2C1/2/3/ USART1/2/3 T4/5/LPUA QUADSPI1/ LPTIM1/ FMC/LPUART1 SAI1SAI1/HR
I2C4/ TIM1/2/3/4/5/8/ I2S2/3/I2C4/ SPI2/3/I2S2 IM1/8/15/ SAI1/TIM
TIM2/5/ B/HRTIM1/ 4/TIM1/8/ /FDCAN/CO RT1/COMP TIM2/3/4/8/1 TIM1/8/F /SAI1/HRTIM1/ TIM1/OPAMP EVENT
SYS_AF 20/15/ UART4/5/ /3/TIM1/5/8/ FDCAN1/ 2/15/
15/16/17 TIM8/20/15/ 16/17 MP7/5/6 1/2/7/4/5/6/ 7 DCAN1/3 TIM1 2
COMP1 TIM8/ 20/Infrared 2 UCPD1
COMP3 3
Infrared

TIM8_ TIM1_ QUADSPI1_ HRTIM1_ UCPD1_ EVENT

PB0 - - TIM3_CH3 - - - - - - -
CH2N CH2N BK1_IO1 FLT5 FRSTX OUT

TIM8_ TIM1_ COMP4_ QUADSPI1_ LPUART1_ HRTIM1_ EVENT

PB1 - - TIM3_CH4 - - - - - -
CH3N CH3N OUT BK1_IO0 RTS_DE SCOUT OUT

I2C3_ QUADSPI1_ HRTIM1_ EVENT

PB2 RTC_OUT2 LPTIM1_OUT TIM5_CH1 TIM20_CH1 - - - - - - - -
SMBA BK2_IO1 SCIN OUT

JTDO- USB_CRS_ TIM8_ SPI3_SCK/ USART2_ FDCAN3 HRTIM1_ HRTIM1_ SAI1_ EVENT
PB3 TIM2_CH2 TIM4_ETR SPI1_SCK - - TIM3_ETR
TRACESWO SYNC CH1N I2S3_CK TX _RX SCOUT EEV9 SCK_B OUT

TIM8_ USART2_ UART5_ FDCAN3 HRTIM1_ SAI1_ EVENT

PB4 JTRST TIM16_CH1 TIM3_CH1 - SPI1_MISO SPI3_MISO - TIM17_BKIN -
CH2N RX RTS_DE _TX EEV7 MCLK_B OUT

I2C1_ SPI3_MOSI USART2_ FDCAN2 LPTIM1_ HRTIM1_ UART5_ EVENT

PB5 - TIM16_BKIN TIM3_CH2 TIM8_CH3N SPI1_MOSI I2C3_SDA TIM17_CH1 SAI1_SD_B
SMBA /I2S3_SD CK _RX IN1 EEV6 CTS OUT
DS12983 Rev 5

USART1_ COMP4_ FDCAN2 LPTIM1_ HRTIM1_ SAI1_FS EVENT

PB6 - TIM16_CH1N TIM4_CH1 - - TIM8_CH1 TIM8_ETR TIM8_BKIN2 HRTIM1_SCIN
TX OUT _TX ETR EEV4 _B OUT

I2C1_ USART1_ COMP3_ LPTIM1_ HRTIM1_ UART4_ EVENT

PB7 - TIM17_CH1N TIM4_CH2 I2C4_SDA TIM8_BKIN - - TIM3_CH4 FMC_NL
SDA RX OUT IN2 EEV3 CTS OUT
Port B

I2C1_ USART3_ COMP1_ FDCAN1 HRTIM1_ SAI1_ EVENT

PB8 - TIM16_CH1 TIM4_CH3 SAI1_CK1 - - TIM8_CH2 - TIM1_BKIN
SCL RX OUT _RX EEV8 MCLK_A OUT

I2C1_ USART3_ COMP2_ FDCAN1 HRTIM1_ SAI1_FS EVENT

PB9 - TIM17_CH1 TIM4_CH4 SAI1_D2 - IR_OUT TIM8_CH3 - TIM1_CH3N
SDA TX OUT _TX EEV5 _A OUT

USART3_ LPUART1_ QUADSPI1_ HRTIM1_ SAI1_SC EVENT

PB10 - TIM2_CH3 - - - - - - - TIM1_BKIN
TX RX CLK FLT3 K_A OUT

USART3_ LPUART1_ QUADSPI1_ HRTIM1_ EVENT

PB11 - TIM2_CH4 - - - - - - - - -
RX TX BK1_NCS FLT4 OUT

I2C2_ SPI2_NSS/ USART3_ LPUART1_ FDCAN2 HRTIM1_ EVENT

PB12 - - TIM5_ETR - TIM1_BKIN - - - -
SMBA I2S2_WS CK RTS_DE _RX CHC1 OUT

SPI2_SCK/ TIM1_ USART3_ LPUART1_ FDCAN2 HRTIM1_ EVENT

PB13 - - - - - - - - -
I2S2_CK CH1N CTS CTS _TX CHC2 OUT

TIM1_ USART3_ COMP4_ HRTIM1_ EVENT

PB14 - TIM15_CH1 - - - SPI2_MISO - - - - -
CH2N RTS_DE OUT CHD1 OUT

TIM1_ SPI2_MOSI/ HRTIM1_ EVENT

PB15 RTC_REFIN TIM15_CH2 TIM15_CH1N COMP3_OUT - - - - - - - -
CH3N I2S2_SD CHD2 OUT

STM32G484xE
 Table 13. Alternate function (continued)

STM32G484xE
AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15

QUADSPI1
QUADSPI1/ I2C3/4/UAR
Port I2C1/3/ /SPI1/2/3/4/ QUADSPI1/ FDCAN/T UART4/5/
LPTIM1/ I2C3/4/SAI1/US I2C1/2/3/ USART1/2/3 T4/5/LPUA QUADSPI1/ LPTIM1/ FMC/LPUART1 SAI1SAI1/HR
I2C4/ TIM1/2/3/4/5/8/ I2S2/3/I2C4/ SPI2/3/I2S2 IM1/8/15/ SAI1/TIM
TIM2/5/ B/HRTIM1/ 4/TIM1/8/ /FDCAN/CO RT1/COMP TIM2/3/4/8/1 TIM1/8/F /SAI1/HRTIM1/ TIM1/OPAMP EVENT
SYS_AF 20/15/ UART4/5/ /3/TIM1/5/8/ FDCAN1/ 2/15/
15/16/17 TIM8/20/15/ 16/17 MP7/5/6 1/2/7/4/5/6/ 7 DCAN1/3 TIM1 2
COMP1 TIM8/ 20/Infrared 2 UCPD1
COMP3 3
Infrared

LPUART1_ EVENT
PC0 - LPTIM1_IN1 TIM1_CH1 - - - - - - - - - - -
RX OUT

LPUART1_ QUADSPI1_ EVENT

PC1 - LPTIM1_OUT TIM1_CH2 - - - - - - - - SAI1_SD_A -
TX BK2_IO0 OUT

QUADSPI1_ EVENT
PC2 - LPTIM1_IN2 TIM1_CH3 COMP3_OUT - - TIM20_CH2 - - - - - - -
BK2_IO1 OUT

TIM1_ QUADSPI1_ EVENT

PC3 - LPTIM1_ETR TIM1_CH4 SAI1_D1 - - - - - - - SAI1_SD_A -
BKIN2 BK2_IO2 OUT

I2C2_ USART1_ QUADSPI1_ EVENT

PC4 - - TIM1_ETR - - - - - - - - -
SCL TX BK2_IO3 OUT

TIM1_ USART1_ HRTIM1_ EVENT

PC5 - - TIM15_BKIN SAI1_D3 - - - - - - - -
CH4N RX EEV10 OUT
DS12983 Rev 5

TIM8_ COMP6_ HRTIM1_ EVENT

PC6 - - TIM3_CH1 HRTIM1_EEV10 - I2S2_MCK I2C4_SCL - - - - -
CH1 OUT CHF1 OUT

TIM8_ COMP5_ HRTIM1_ EVENT

PC7 - - TIM3_CH2 HRTIM1_FLT5 - I2S3_MCK I2C4_SDA - - - - -
CH2 OUT CHF2 OUT
Port C

TIM8_ COMP7_ EVENT

PC8 - - TIM3_CH3 HRTIM1_CHE1 - TIM20_CH3 I2C3_SCL - - - - - -
CH3 OUT OUT

TIM8_ TIM8_ EVENT

PC9 - - TIM3_CH4 HRTIM1_CHE2 I2SCKIN - I2C3_SDA - - - - - -
CH4 BKIN2 OUT

TIM8_ SPI3_SCK/ USART3_ HRTIM1_ EVENT

PC10 - - - - UART4_TX - - - - - -
CH1N I2S3_CK TX FLT6 OUT

TIM8_ USART3_ EVENT

PC11 - - - HRTIM1_EEV2 UART4_RX SPI3_MISO I2C3_SDA - - - - - -
CH2N RX OUT

TIM8_ SPI3_MOSI USART3_ UCPD1_ EVENT

PC12 - TIM5_CH2 - HRTIM1_EEV1 UART5_TX - - - - - -
CH3N /I2S3_SD CK FRSTX OUT

Pinouts and pin description

TIM1_ TIM8_ EVENT
PC13 - - TIM1_BKIN - - - - - - - - - -
CH1N CH4N OUT

EVENT
PC14 - - - - - - - - - - - - - - -
OUT

EVENT
PC15 - - - - - - - - - - - - - - -
OUT
75/235
 Table 13. Alternate function (continued)
76/235

Pinouts and pin description

AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15

QUADSPI1
QUADSPI1/ I2C3/4/UAR
Port I2C1/3/ /SPI1/2/3/4/ QUADSPI1/ FDCAN/T UART4/5/
LPTIM1/ I2C3/4/SAI1/US I2C1/2/3/ USART1/2/3 T4/5/LPUA QUADSPI1/ LPTIM1/ FMC/LPUART1 SAI1SAI1/HR
I2C4/ TIM1/2/3/4/5/8/ I2S2/3/I2C4/ SPI2/3/I2S2 IM1/8/15/ SAI1/TIM
TIM2/5/ B/HRTIM1/ 4/TIM1/8/ /FDCAN/CO RT1/COMP TIM2/3/4/8/1 TIM1/8/F /SAI1/HRTIM1/ TIM1/OPAMP EVENT
SYS_AF 20/15/ UART4/5/ /3/TIM1/5/8/ FDCAN1/ 2/15/
15/16/17 TIM8/20/15/ 16/17 MP7/5/6 1/2/7/4/5/6/ 7 DCAN1/3 TIM1 2
COMP1 TIM8/ 20/Infrared 2 UCPD1
COMP3 3
Infrared

TIM8_ FDCAN1 EVENT

PD0 - - - - - - - - - - FMC_D2 - -
CH4N _RX OUT

TIM8_ TIM8_ FDCAN1 EVENT

PD1 - - - - - - - - - FMC_D3 - -
CH4 BKIN2 _TX OUT

TIM8_ EVENT
PD2 - - TIM3_ETR - UART5_RX - - - - - - - - -
BKIN OUT

TIM2_CH1/ USART2_ QUADSPI1 EVENT

PD3 - - - - - - - - - FMC_CLK - -
TIM2_ETR CTS _BK2_NCS OUT

USART2_ QUADSPI1_ EVENT

PD4 - - TIM2_CH2 - - - - - - - FMC_NOE - -
RTS_DE BK2_IO0 OUT

USART2_ QUADSPI1_ EVENT

PD5 - - - - - - - - - - FMC_NWE - -
TX BK2_IO1 OUT
DS12983 Rev 5

USART2_ QUADSPI1_ EVENT

PD6 - - TIM2_CH4 SAI1_D1 - - - - - - FMC_NWAIT SAI1_SD_A -
RX BK2_IO2 OUT

USART2_ QUADSPI1_ FMC_NCE/ EVENT

PD7 - - TIM2_CH3 - - - - - - - - -
CK BK2_IO3 FMC_NE1 OUT
Port D

USART3_ EVENT
PD8 - - - - - - - - - - - FMC_D13 - -
TX OUT

USART3_ EVENT
PD9 - - - - - - - - - - - FMC_D14 - -
RX OUT

USART3_ EVENT
PD10 - - - - - - - - - - - FMC_D15 - -
CK OUT

I2C4_ USART3_ EVENT

PD11 - TIM5_ETR - - - - - - - - FMC_A16 - -
SMBA CTS OUT

USART3_ EVENT
PD12 - - TIM4_CH1 - - - - - - - - FMC_A17 - -
RTS_DE OUT

EVENT
PD13 - - TIM4_CH2 - - - - - - - - - FMC_A18 - -
OUT

EVENT
PD14 - - TIM4_CH3 - - - - - - - - - FMC_D0 - -
OUT

EVENT
PD15 - - TIM4_CH4 - - - SPI2_NSS - - - - - FMC_D1 - -
OUT

STM32G484xE
 Table 13. Alternate function (continued)

STM32G484xE
AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15

QUADSPI1
QUADSPI1/ I2C3/4/UAR
Port I2C1/3/ /SPI1/2/3/4/ QUADSPI1/ FDCAN/T UART4/5/
LPTIM1/ I2C3/4/SAI1/US I2C1/2/3/ USART1/2/3 T4/5/LPUA QUADSPI1/ LPTIM1/ FMC/LPUART1 SAI1SAI1/HR
I2C4/ TIM1/2/3/4/5/8/ I2S2/3/I2C4/ SPI2/3/I2S2 IM1/8/15/ SAI1/TIM
TIM2/5/ B/HRTIM1/ 4/TIM1/8/ /FDCAN/CO RT1/COMP TIM2/3/4/8/1 TIM1/8/F /SAI1/HRTIM1/ TIM1/OPAMP EVENT
SYS_AF 20/15/ UART4/5/ /3/TIM1/5/8/ FDCAN1/ 2/15/
15/16/17 TIM8/20/15/ 16/17 MP7/5/6 1/2/7/4/5/6/ 7 DCAN1/3 TIM1 2
COMP1 TIM8/ 20/Infrared 2 UCPD1
COMP3 3
Infrared

TIM16_ USART1_ FDCAN1 EVENT

PE0 - - TIM4_ETR TIM20_CH4N - TIM20_ETR - - - FMC_NBL0 - -
CH1 TX _RXFD OUT

TIM17_ USART1_ EVENT

PE1 - - - - - TIM20_CH4 - - - - FMC_NBL1 - -
CH1 RX OUT

SAI1_MCLK_ EVENT
PE2 TRACECK - TIM3_CH1 SAI1_CK1 - SPI4_SCK TIM20_CH1 - - - - - FMC_A23 -
A OUT

EVENT
PE3 TRACED0 - TIM3_CH2 - - SPI4_NSS TIM20_CH2 - - - - - FMC_A19 SAI1_SD_B -
OUT

TIM20_ EVENT
PE4 TRACED1 - TIM3_CH3 SAI1_D2 - SPI4_NSS - - - - - FMC_A20 SAI1_FS_A -
CH1N OUT

TIM20_ EVENT
PE5 TRACED2 - TIM3_CH4 SAI1_CK2 - SPI4_MISO - - - - - FMC_A21 SAI1_SCK_A -
CH2N OUT
DS12983 Rev 5

TIM20_ EVENT
PE6 TRACED3 - - SAI1_D1 - SPI4_MOSI - - - - - FMC_A22 SAI1_SD_A -
CH3N OUT

EVENT
PE7 - - TIM1_ETR - - - - - - - - - FMC_D4 SAI1_SD_B -
OUT
Port E

EVENT
PE8 - TIM5_CH3 TIM1_CH1N - - - - - - - - - FMC_D5 SAI1_SCK_B -
OUT

EVENT
PE9 - TIM5_CH4 TIM1_CH1 - - - - - - - - - FMC_D6 SAI1_FS_B -
OUT

QUADSPI1_ SAI1_MCLK_ EVENT

PE10 - - TIM1_CH2N - - - - - - - - FMC_D7 -
CLK B OUT

QUADSPI1_ EVENT
PE11 - - TIM1_CH2 - - SPI4_NSS - - - - - FMC_D8 - -
BK1_NCS OUT

QUADSPI1_ EVENT
PE12 - - TIM1_CH3N - - SPI4_SCK - - - - - FMC_D9 - -
BK1_IO0 OUT

Pinouts and pin description

QUADSPI1_ EVENT
PE13 - - TIM1_CH3 - - SPI4_MISO - - - - - FMC_D10 - -
BK1_IO1 OUT

TIM1_ QUADSPI1_ EVENT

PE14 - - TIM1_CH4 - - SPI4_MOSI - - - - FMC_D11 - -
BKIN2 BK1_IO2 OUT

TIM1_ USART3_ QUADSPI1_ EVENT

PE15 - - TIM1_BKIN - - - - - - FMC_D12 - -
CH4N RX BK1_IO3 OUT
77/235
 Table 13. Alternate function (continued)
78/235

Pinouts and pin description

AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15

QUADSPI1
QUADSPI1/ I2C3/4/UAR
Port I2C1/3/ /SPI1/2/3/4/ QUADSPI1/ FDCAN/T UART4/5/
LPTIM1/ I2C3/4/SAI1/US I2C1/2/3/ USART1/2/3 T4/5/LPUA QUADSPI1/ LPTIM1/ FMC/LPUART1 SAI1SAI1/HR
I2C4/ TIM1/2/3/4/5/8/ I2S2/3/I2C4/ SPI2/3/I2S2 IM1/8/15/ SAI1/TIM
TIM2/5/ B/HRTIM1/ 4/TIM1/8/ /FDCAN/CO RT1/COMP TIM2/3/4/8/1 TIM1/8/F /SAI1/HRTIM1/ TIM1/OPAMP EVENT
SYS_AF 20/15/ UART4/5/ /3/TIM1/5/8/ FDCAN1/ 2/15/
15/16/17 TIM8/20/15/ 16/17 MP7/5/6 1/2/7/4/5/6/ 7 DCAN1/3 TIM1 2
COMP1 TIM8/ 20/Infrared 2 UCPD1
COMP3 3
Infrared

I2C2_ SPI2_NSS/ TIM1_ EVENT

PF0 - - - - - - - - - - - -
SDA I2S2_WS CH3N OUT

SPI2_SCK/ EVENT
PF1 - - - - - - - - - - - - - -
I2S2_CK OUT

I2C2_ EVENT
PF2 - - TIM20_CH3 - - - - - - - - FMC_A2 - -
SMBA OUT

I2C3_ EVENT
PF3 - - TIM20_CH4 - - - - - - - - FMC_A3 - -
SCL OUT

I2C3_ EVENT
PF4 - - COMP1_OUT TIM20_CH1N - - - - - - - FMC_A4 - -
SDA OUT

EVENT
PF5 - - TIM20_CH2N - - - - - - - - - FMC_A5 - -
OUT
DS12983 Rev 5

I2C2_ USART3_ QUADSPI1_ EVENT

PF6 - TIM5_ETR TIM4_CH4 SAI1_SD_B - TIM5_CH1 - - - - - -
SCL RTS BK1_IO3 OUT

QUADSPI1_ SAI1_MCLK_ EVENT

PF7 - - TIM20_BKIN - - - TIM5_CH2 - - - - FMC_A1 -
BK1_IO2 B OUT
Port F

QUADSPI1_ EVENT
PF8 - - TIM20_BKIN2 - - - TIM5_CH3 - - - - FMC_A24 SAI1_SCK_B -
BK1_IO0 OUT

QUADSPI1_ EVENT
PF9 - - TIM20_BKIN TIM15_CH1 - SPI2_SCK TIM5_CH4 - - - - FMC_A25 SAI1_FS_B -
BK1_IO1 OUT

QUADSPI1_ EVENT
PF10 - - TIM20_BKIN2 TIM15_CH2 - SPI2_SCK - - - - - FMC_A0 SAI1_D3 -
CLK OUT

EVENT
PF11 - - TIM20_ETR - - - - - - - - - FMC_NE4 - -
OUT

EVENT
PF12 - - TIM20_CH1 - - - - - - - - - FMC_A6 - -
OUT

I2C4_ EVENT
PF13 - - TIM20_CH2 - - - - - - - - FMC_A7 - -
SMBA OUT

I2C4_ EVENT
PF14 - - TIM20_CH3 - - - - - - - - FMC_A8 - -
SCL OUT

I2C4_ EVENT
PF15 - - TIM20_CH4 - - - - - - - - FMC_A9 - -
SDA OUT

STM32G484xE
 Table 13. Alternate function (continued)

STM32G484xE
AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15

QUADSPI1
QUADSPI1/ I2C3/4/UAR
Port I2C1/3/ /SPI1/2/3/4/ QUADSPI1/ FDCAN/T UART4/5/
LPTIM1/ I2C3/4/SAI1/US I2C1/2/3/ USART1/2/3 T4/5/LPUA QUADSPI1/ LPTIM1/ FMC/LPUART1 SAI1SAI1/HR
I2C4/ TIM1/2/3/4/5/8/ I2S2/3/I2C4/ SPI2/3/I2S2 IM1/8/15/ SAI1/TIM
TIM2/5/ B/HRTIM1/ 4/TIM1/8/ /FDCAN/CO RT1/COMP TIM2/3/4/8/1 TIM1/8/F /SAI1/HRTIM1/ TIM1/OPAMP EVENT
SYS_AF 20/15/ UART4/5/ /3/TIM1/5/8/ FDCAN1/ 2/15/
15/16/17 TIM8/20/15/ 16/17 MP7/5/6 1/2/7/4/5/6/ 7 DCAN1/3 TIM1 2
COMP1 TIM8/ 20/Infrared 2 UCPD1
COMP3 3
Infrared

EVENT
PG0 - - TIM20_CH1N - - - - - - - - - FMC_A10 - -
OUT

EVENT
PG1 - - TIM20_CH2N - - - - - - - - - FMC_A11 - -
OUT

EVENT
PG2 - - TIM20_CH3N - - SPI1_SCK - - - - - - FMC_A12 - -
OUT

I2C4_ TIM20_ EVENT

PG3 - - TIM20_BKIN - SPI1_MISO - - - - - FMC_A13 - -
SCL CH4N OUT

I2C4_ EVENT
PG4 - - TIM20_BKIN2 - SPI1_MOSI - - - - - - FMC_A14 - -
SDA OUT
Port G

LPUART1_ EVENT
PG5 - - TIM20_ETR - - SPI1_NSS - - - - - FMC_A15 - -
CTS OUT
DS12983 Rev 5

I2C3_ LPUART1_ EVENT

PG6 - - TIM20_BKIN - - - - - - - FMC_INT - -
SMBA RTS_DE OUT

I2C3_ LPUART1_ SAI1_MCLK_ EVENT

PG7 - - - SAI1_CK1 - - - - - - FMC_INT -
SCL TX A OUT

I2C3_ LPUART1_ EVENT

PG8 - - - - - - - - - - FMC_NE3 - -
SDA RX OUT

FMC_NCE/ TIM15_ EVENT

PG9 - - - - - - SPI3_SCK USART1_TX - - - - -
FMC_NE2 CH1N OUT

EVENT
PG10 MCO - - - - - - - - - - - - - -
OUT

Pinouts and pin description

79/235
Electrical characteristics STM32G484xE

5 Electrical characteristics

5.1 Parameter conditions

Unless otherwise specified, all voltages are referenced to VSS.

5.1.1 Minimum and maximum values

Unless otherwise specified, the minimum and maximum values are guaranteed in the worst
conditions of ambient temperature, supply voltage and frequencies by tests in production on
100% of the devices with an ambient temperature at TA = 25 °C and TA = TAmax (given by
the selected temperature range).
Data based on characterization results, design simulation and/or technology characteristics
are indicated in the table footnotes and are not tested in production. Based on
characterization, the minimum and maximum values refer to sample tests and represent the
mean value plus or minus three times the standard deviation (mean ±3σ).

5.1.2 Typical values

Unless otherwise specified, typical data are based on TA = 25 °C, VDD = VDDA = 3 V. They
are given only as design guidelines and are not tested.
Typical ADC accuracy values are determined by characterization of a batch of samples from
a standard diffusion lot over the full temperature range, where 95% of the devices have an
error less than or equal to the value indicated (mean ±2σ).

5.1.3 Typical curves

Unless otherwise specified, all typical curves are given only as design guidelines and are
not tested.

5.1.4 Loading capacitor

The loading conditions used for pin parameter measurement are shown in Figure 14.

5.1.5 Pin input voltage

The input voltage measurement on a pin of the device is described in Figure 15.

Figure 14. Pin loading conditions Figure 15. Pin input voltage

MCU pin MCU pin

C = 50 pF VIN

MS19210V1 MS19211V1

80/235 DS12983 Rev 5

STM32G484xE Electrical characteristics

5.1.6 Power supply scheme

Figure 16. Power supply scheme

VBAT

Backup circuitry
(LSE, RTC,
1.55 – 3.6 V
Backup registers)
Power switch

VDD VCORE
n x VDD
Regulator

VDDIO
OUT

Level shifter
Kernel logic
n x 100 nF IO (CPU, Digital
GPIOs logic
+1 x 4.7 μF IN & Memories)

n x VSS

VDDA VDDA Reset block

Temp. sensor
VREF VREF+ PLL, HSI16, HSI48

VREF+ ADCs/
DACs/
Standby circuitry
10 nF OPAMPs/ (Wakeup logic,
+1 μF VREF- COMPs/ IWDG)
100 nF +1 μF
VREFBUF

VSSA

MS60206V1

Caution: Each power supply pair (VDD/VSS, VDDA/VSSA etc.) must be decoupled with filtering ceramic
capacitors as shown above. These capacitors must be placed as close as possible to, or
below, the appropriate pins on the underside of the PCB to ensure the good functionality of
the device.

DS12983 Rev 5 81/235

199
Electrical characteristics STM32G484xE

5.1.7 Current consumption measurement

Figure 17. Current consumption measurement

IDD_VBAT
VBAT

IDD
VDD

IDDA
VDDA

MS60200V1

The IDD_ALL parameters given in Table 21 to Table 25 represent the total MCU consumption
including the current supplying VDD, VDDA and VBAT.

5.2 Absolute maximum ratings

Stresses above the absolute maximum ratings listed in Table 14: Voltage characteristics,
Table 15: Current characteristics and Table 16: Thermal characteristics may cause
permanent damage to the device. These are stress ratings only and functional operation of
the device at these conditions is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability. Exposure to maximum rating conditions for
extended periods may affect device reliability. Device mission profile (application conditions)
is compliant with JEDEC JESD47 qualification standard, extended mission profiles are
available on demand.

Table 14. Voltage characteristics(1)

Symbol Ratings Min Max Unit

External main supply voltage (including VDD,

VDD - VSS -0.3 4.0
VDDA, VBAT and VREF+)
min (VDD, VDDA)
Input voltage on FT_xxx pins except FT_c pins VSS-0.3
+ 4.0(3)(4)
V
VIN(2) Input voltage on FT_c pins VSS-0.3 5.5
Input voltage on TT_xx pins VSS-0.3 4.0
Input voltage on any other pins VSS-0.3 4.0
Variations between different VDDX power pins of
|∆VDDx| - 50
the same domain mV
|VSSx-VSS| (5)
Variations between all the different ground pins - 50
VREF+-VDDA Allowed voltage difference for VREF+ > VDDA - 0.4 V
1. All main power (VDD, VDDA, VBAT) and ground (VSS, VSSA) pins must always be connected to the external
power supply, in the permitted range.

82/235 DS12983 Rev 5

STM32G484xE Electrical characteristics

2. VIN maximum must always be respected. Refer to Table 15: Current characteristics for the maximum
allowed injected current values.
3. This formula has to be applied only on the power supplies related to the IO structure described in the pin
definition table.
4. To sustain a voltage higher than 4 V the internal pull-up/pull-down resistors must be disabled.
5. Include VREF- pin.

Table 15. Current characteristics

Symbol Ratings Max Unit

∑IVDD Total current into sum of all VDD power lines (source)(1) 150
∑IVSS Total current out of sum of all VSS ground lines (sink)(1) 150
(1)
IVDD(PIN) Maximum current into each VDD power pin (source) 100
IVSS(PIN) Maximum current out of each VSS ground pin (sink)(1) 100
Output current sunk by any I/O and control pin except FT_f 20
IIO(PIN) Output current sunk by any FT_f pin 20 mA
Output current sourced by any I/O and control pin 20
Total output current sunk by sum of all I/Os and control pins(2) 100
∑IIO(PIN)
Total output current sourced by sum of all I/Os and control pins(2) 100
IINJ(PIN)(3) Injected current on FT_xxx, TT_xx, NRST pins -5/0(4)
∑|IINJ(PIN)| Total injected current (sum of all I/Os and control pins)(5) ±25
1. All main power (VDD, VDDA, VBAT) and ground (VSS, VSSA) pins must always be connected to the external
power supplies, in the permitted range.
2. This current consumption must be correctly distributed over all I/Os and control pins. The total output
current must not be sunk/sourced between two consecutive power supply pins referring to high pin count
LQFP packages.
3. Positive injection (when VIN > VDD) is not possible on these I/Os and does not occur for input voltages
lower than the specified maximum value.
4. A negative injection is induced by VIN < VSS. IINJ(PIN) must never be exceeded. Refer also to Table 14:
Voltage characteristics for the minimum allowed input voltage values.
5. When several inputs are submitted to a current injection, the maximum ∑|IINJ(PIN)| is the absolute sum of
the negative injected currents (instantaneous values).

Table 16. Thermal characteristics

Symbol Ratings Value Unit

TSTG Storage temperature range –65 to +150 °C

TJ Maximum junction temperature 150 °C

DS12983 Rev 5 83/235

199
Electrical characteristics STM32G484xE

5.3 Operating conditions

5.3.1 General operating conditions

Table 17. General operating conditions

Symbol Parameter Conditions Min Max Unit

fHCLK Internal AHB clock frequency - 0 170

fPCLK1 Internal APB1 clock frequency - 0 170 MHz
fPCLK2 Internal APB2 clock frequency - 0 170

VDD Standard operating voltage - 1.71(1) 3.6 V

ADC or COMP used 1.62

3.6
DAC 1 MSPS or DAC 15 MSPS 1.71
OPAMP used 2.0 3.6
VDDA Analog supply voltage V
VREFBUF used 2.4
ADC, DAC, OPAMP, COMP, 3.6
0
VREFBUF not used
VBAT Backup operating voltage - 1.55 3.6 V
TT_xx -0.3 VDD+0.3
FT_c -0.3 5
VIN I/O input voltage V
MIN(MIN(VDD,
All I/O except TT_xx and FT_c -0.3 VDDA)+3.6 V,
5.5 V)(2)(3)
See Section 6.11: Thermal characteristics for application
appropriate thermal resistance and package.
PD Power dissipation Power dissipation is then calculated according ambient mW
temperature (TA) and maximum junction temperature (TJ) and
selected thermal resistance.

Ambient temperature for the Maximum power dissipation -40 85

suffix 6 version Low-power dissipation(4) -40 105
TA °C
Ambient temperature for the Maximum power dissipation -40 125
suffix 3 version Low-power dissipation(4) -40 130
Suffix 6 version -40 105
TJ Junction temperature range °C
Suffix 3 version -40 130
1. When RESET is released functionality is guaranteed down to VBOR0 Min.
2. This formula has to be applied only on the power supplies related to the IO structure described by the pin definition table.
Maximum I/O input voltage is the smallest value between MIN(VDD, VDDA)+3.6 V and 5.5V.
3. For operation with voltage higher than Min (VDD, VDDA) +0.3 V, the internal Pull-up and Pull-Down resistors must be
disabled.
4. In low-power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax (see Section 6.11:
Thermal characteristics).

84/235 DS12983 Rev 5

STM32G484xE Electrical characteristics

5.3.2 Operating conditions at power-up / power-down

The parameters given in Table 18 are derived from tests performed under the ambient
temperature condition summarized in Table 17.

Table 18. Operating conditions at power-up / power-down

Symbol Parameter Conditions Min Max Unit

VDD rise time rate 0 ∞

tVDD - µs/V
VDD fall time rate 10 ∞
VDDA rise time rate 0 ∞
tVDDA - µs/V
VDDA fall time rate 10 ∞

5.3.3 Embedded reset and power control block characteristics

The parameters given in Table 19 are derived from tests performed under the ambient
temperature conditions summarized in Table 17: General operating conditions.

Table 19. Embedded reset and power control block characteristics

Symbol Parameter Conditions(1) Min Typ Max Unit

Reset temporization after

tRSTTEMPO(2) VDD rising - 250 400 μs
BOR0 is detected
Rising edge 1.62 1.66 1.7
VBOR0(2) Brown-out reset threshold 0 V
Falling edge 1.6 1.64 1.69
Rising edge 2.06 2.1 2.14
VBOR1 Brown-out reset threshold 1 V
Falling edge 1.96 2 2.04
Rising edge 2.26 2.31 2.35
VBOR2 Brown-out reset threshold 2 V
Falling edge 2.16 2.20 2.24
Rising edge 2.56 2.61 2.66
VBOR3 Brown-out reset threshold 3 V
Falling edge 2.47 2.52 2.57
Rising edge 2.85 2.90 2.95
VBOR4 Brown-out reset threshold 4 V
Falling edge 2.76 2.81 2.86

Programmable voltage Rising edge 2.1 2.15 2.19

VPVD0 V
detector threshold 0 Falling edge 2 2.05 2.1
Rising edge 2.26 2.31 2.36
VPVD1 PVD threshold 1 V
Falling edge 2.15 2.20 2.25
Rising edge 2.41 2.46 2.51
VPVD2 PVD threshold 2 V
Falling edge 2.31 2.36 2.41
Rising edge 2.56 2.61 2.66
VPVD3 PVD threshold 3 V
Falling edge 2.47 2.52 2.57

DS12983 Rev 5 85/235

199
Electrical characteristics STM32G484xE

Table 19. Embedded reset and power control block characteristics (continued)
Symbol Parameter Conditions(1) Min Typ Max Unit

Rising edge 2.69 2.74 2.79

VPVD4 PVD threshold 4 V
Falling edge 2.59 2.64 2.69
Rising edge 2.85 2.91 2.96
VPVD5 PVD threshold 5 V
Falling edge 2.75 2.81 2.86
Rising edge 2.92 2.98 3.04
VPVD6 PVD threshold 6 V
Falling edge 2.84 2.90 2.96
Hysteresis in
continuous - 20 -
Vhyst_BORH0 Hysteresis voltage of BORH0 mode mV
Hysteresis in
- 30 -
other mode
Hysteresis voltage of BORH
Vhyst_BOR_PVD - - 100 - mV
(except BORH0) and PVD
IDD BOR(3) (except BOR0) and
- - 1.1 1.6 µA
(BOR_PVD)(2) PVD consumption from VDD

VDDA peripheral voltage Rising edge 1.61 1.65 1.69

VPVM1 V
monitoring (COMP/ADC) Falling edge 1.6 1.64 1.68

VDDA peripheral voltage Rising edge 1.78 1.82 1.86

VPVM2 V
monitoring (OPAMP/DAC) Falling edge 1.77 1.81 1.85
Vhyst_PVM1 PVM1 hysteresis - - 10 - mV
Vhyst_PVM2 PVM2 hysteresis - - 10 - mV
IDD
PVM1 and PVM2
(PVM1/PVM2) - - 2 - µA
(2) consumption from VDD

1. Continuous mode means Run/Sleep modes, or temperature sensor enable in Low-power run/Low-power
sleep modes.
2. Guaranteed by design - Not tested in production.
3. BOR0 is enabled in all modes (except shutdown) and its consumption is therefore included in the supply
current characteristics tables.

86/235 DS12983 Rev 5

STM32G484xE Electrical characteristics

5.3.4 Embedded voltage reference

The parameters given in Table 20 are derived from tests performed under the ambient
temperature and supply voltage conditions summarized in Table 17: General operating
conditions.

Table 20. Embedded internal voltage reference

Symbol Parameter Conditions Min Typ Max Unit

Internal reference
VREFINT –40 °C < TA < +130 °C 1.182 1.212 1.232 V
voltage
ADC sampling time
(1) when reading the
tS_vrefint - 4(2) - - µs
internal reference
voltage
Start time of reference
tstart_vrefint voltage buffer when - - 8 12(2) µs
ADC is enable
VREFINT buffer
consumption from VDD
- - 12.5 20(2) µA
IDD(VREFINTBUF) when converted by
ADC
Internal reference
∆VREFINT voltage spread over VDD = 3 V - 5 7.5(2) mV
the temperature range
Average temperature
TCoeff –40°C < TA < +130°C - 30 50(2) ppm/°C
coefficient
ACoeff Long term stability 1000 hours, T = 25°C - 300 1000(2) ppm
Average voltage
VDDCoeff 3.0 V < VDD < 3.6 V - 250 1200(2) ppm/V
coefficient
VREFINT_DIV1 1/4 reference voltage 24 25 26
%
VREFINT_DIV2 1/2 reference voltage - 49 50 51
VREFINT
VREFINT_DIV3 3/4 reference voltage 74 75 76
1. The shortest sampling time is determined in the application by multiple iterations.
2. Guaranteed by design - Not tested in production.

DS12983 Rev 5 87/235

199
Electrical characteristics STM32G484xE

Figure 18. VREFINT versus temperature

V
1.235

1.23

1.225

1.22

1.215

1.21

1.205

1.2

1.195

1.19

1.185
-40 -20 0 20 40 60 80 100 120 °C
Mean Min Max
MSv40169V2

5.3.5 Supply current characteristics

The current consumption is a function of several parameters and factors such as the
operating voltage, ambient temperature, I/O pin loading, device software configuration,
operating frequencies, I/O pin switching rate, program location in memory and executed
binary code
The current consumption is measured as described in Figure 17: Current consumption
measurement.

Typical and maximum current consumption

The MCU is placed under the following conditions:
• All I/O pins are in analog input mode
• All peripherals are disabled except when explicitly mentioned
• The flash memory access time is adjusted with the minimum wait states number,
depending on the fHCLK frequency (refer to the table “number of wait states according
to CPU clock (HCLK) frequency” available in the reference manual RM0440
"STM32G4 Series advanced Arm®-based 32-bit MCUs").
• When the peripherals are enabled fPCLK = fHCLK
• The voltage scaling Range 1 is adjusted to fHCLK frequency as follows:
– Voltage Range 1 Boost mode for 150 MHz < fHCLK ≤ 170 MHz
– Voltage Range 1 Normal mode for 26 MHz < fHCLK ≤ 150 MHz
The parameters given in Table 21 to Table 25 are derived from tests performed under
ambient temperature and supply voltage conditions summarized in Table 17: General
operating conditions.

88/235 DS12983 Rev 5

 STM32G484xE
Table 21. Current consumption in Run and Low-power run modes, code with data
processing running from flash in single Bank, ART enable (Cache ON Prefetch OFF)
Condition Typ Max
Symbol Parameter fHCLK Unit
Voltage
- 25°C 55°C 85°C 105°C 125°C 25°C 55°C 85°C 105°C 125°C
scaling

26 MHz 3.65 3.85 4.45 5.1 6.45 4.40 6.60 11.0 16.0 22.0
16 MHz 2.30 2.55 3.1 3.8 5.15 3.00 5.00 9.00 14.9 21.0
8 MHz 1.25 1.50 2.05 2.8 4.1 2.00 3.6 7.70 13.0 19.0
Range 2 4 MHz 0.75 0.955 1.5 2.3 3.6 1.40 3.00 7.00 12.0 19.0
2 MHz 0.47 0.69 1.25 2 3.35 0.990 2.60 6.70 12.0 19.0
1 MHz 0.34 0.55 1.1 1.9 3.2 0.830 2.50 6.50 12.0 18.0
DS12983 Rev 5

100 KHz 0.22 0.43 0.98 1.75 3.1 0.690 2.30 6.30 11.0 18.0
fHCLK = fHSE up to
Range 1
48 MHz included,
Boost 170 MHz 29.50 29.5 31 32 34.5 31.0 35.0 42.0 48.0 56.0
bypass mode PLL
Supply current mode
IDD (Run) ON above 48 mA
in Run mode
MHz all 150 MHz 24.50 26 27 28 30 26.0 28.0 34.0 44.0 47.0
peripherals
120 MHz 19.50 20 20.5 21.5 23.5 21.0 23.0 32.0 38.0 43.0
disable
80 MHz 13.00 13.5 14 15.5 17 15.0 17.0 25.0 30.0 37.0
72 MHz 12.00 12 13 14 15.5 13.0 16.0 23.0 29.0 36.0
Range 1 64 MHz 10.50 11 11.5 12.5 14.5 12.0 14.0 21.0 27.0 34.0

Electrical characteristics
48 MHz 7.90 8.2 9 9.7 11.5 9.10 13.0 19.0 25.0 32.0
32 MHz 5.40 5.65 6.4 7.2 8.85 6.50 9.60 15.0 21.0 29.0
24 MHz 4.10 4.35 5.1 5.95 7.6 5.20 8.00 14.0 20.0 28.0
16 MHz 2.80 3.1 3.8 4.7 6.3 4.30 6.40 12.0 18.0 26.0
89/235
 Table 21. Current consumption in Run and Low-power run modes, code with data
90/235

Electrical characteristics
processing running from flash in single Bank, ART enable (Cache ON Prefetch OFF) (continued)
Condition Typ Max
Symbol Parameter fHCLK Unit
Voltage
- 25°C 55°C 85°C 105°C 125°C 25°C 55°C 85°C 105°C 125°C
scaling

2 MHz 455 725 1350 2250 3800 1200 3200 8100 14000 22000
SYSCLK source is HSE 1 MHz 280 545 1200 2100 3600 1100 3000 7900 14000 22000
in bypass mode
all peripherals disable 250 KHz 160 435 1100 2000 3500 840 2800 7700 14000 22000
Supply current 62.5 KHz 130 405 1050 1950 3500 810 2700 7600 14000 22000
IDD (LPRun) in Low-power µA
run mode 2 MHz 920 1200 1850 2750 4250 1900 3800 8700 15000 22000

SYSCLK source is HSI16 1 MHz 780 1100 1700 2650 4150 1700 3700 8600 14000 22000
all peripherals disable 250 KHz 725 980 1600 2500 4050 1600 3600 8400 14000 22000
62.5 KHz 720 955 1600 2500 4000 1500 3500 8400 14000 22000
DS12983 Rev 5

STM32G484xE
 STM32G484xE
Table 22. Current consumption in Run and Low-power run modes, code with data
processing running from flash in dual bank, ART enable (Cache ON Prefetch OFF)
Conditions Typ Max(1)
Symbol Parameter Voltage fHCLK Unit
- 25°C 55°C 85°C 105°C 125°C 25°C 55°C 85°C 105°C 125°C
scaling

26 MHz 3.70 3.9 4.45 5.15 6.45 4.40 6.60 11.0 16.0 22.0
16 MHz 2.35 2.55 3.1 3.85 5.15 3.00 5.00 9.00 14.0 21.0
8 MHz 1.25 1.5 2.05 2.8 4.15 2.00 3.60 7.70 13.0 19.0
Range 2 4 MHz 0.75 0.97 1.5 2.3 3.6 1.40 3.00 7.00 12.0 19.0
2 MHz 0.47 0.7 1.25 2.05 3.35 0.990 2.60 6.70 12.0 19.0
1 MHz 0.34 0.56 1.1 1.9 3.2 0.830 2.50 6.50 12.0 18.0
fHCLK = fHSE
100 KHz 0.22 0.44 0.975 1.8 3.1 0.690 2.30 6.30 11.0 18.0
DS12983 Rev 5

up to 48MHz
included, Range 1
170 MHz 29.50 30 31 32 34.5 31.0 35.0 42.0 48.0 56.0
Supply bypass mode Boost mode
IDD
current in PLL ON mA
(Run) 150 MHz 24.50 24.5 25.5 26.5 28.5 26.0 28.0 34.0 44.0 47.0
Run mode above 48
MHz all 120 MHz 19.50 20 20.5 22 23.5 21.0 23.0 32.0 38.0 43.0
peripherals
disable 80 MHz 13.00 13.5 14.5 15.5 17 15.0 17.0 25.0 30.0 37.0
72 MHz 12.00 12.5 13 14 15.5 13.0 16.0 23.0 29.0 36.0
Range 1 64 MHz 10.50 11 11.5 13 14.5 12.0 14.0 21.0 27.0 34.0
48 MHz 7.95 8.3 9 10 11.5 9.10 13.0 19.0 25.0 32.0
32 MHz 5.40 5.7 6.45 7.25 8.9 6.50 9.60 15.0 21.0 29.0

Electrical characteristics
24 MHz 4.10 4.4 5.1 6 7.65 5.20 8.00 14.0 20.0 28.0
16 MHz 2.85 3.15 3.8 4.75 6.35 4.30 6.40 12.0 18.0 26.0
91/235
 Table 22. Current consumption in Run and Low-power run modes, code with data
92/235

Electrical characteristics
processing running from flash in dual bank, ART enable (Cache ON Prefetch OFF) (continued)
Conditions Typ Max(1)
Symbol Parameter Voltage fHCLK Unit
- 25°C 55°C 85°C 105°C 125°C 25°C 55°C 85°C 105°C 125°C
scaling

2 MHz 450 725 1350 2250 3800 1200 3200 8100 14000 22000
SYSCLK source is HSE 1 MHz 270 575 1200 2150 3650 1100 3000 7900 14000 22000
in bypass mode
all peripherals disable 250 KHz 185 460 1050 2000 3550 840 2800 7700 14000 22000
Supply
IDD current in 62.5 KHz 130 430 1050 2000 3500 810 2700 7600 14000 22000
µA
(LPRun) Low-power 2 MHz 970 1200 1850 2750 4300 1900 3800 8700 15000 22000
run mode
SYSCLK source is HSI16 1 MHz 800 1100 1700 2650 4150 1700 3700 8600 14000 22000
all peripherals disable 250 KHz 680 990 1600 2550 4050 1600 3600 8400 14000 22000
DS12983 Rev 5

62.5 KHz 695 965 1600 2500 4050 1500 3500 8400 14000 22000
1. Evaluated by characterization - Not tested in production, unless otherwise specified.

STM32G484xE
 Table 23. Current consumption in Run and Low-power run modes,

STM32G484xE
code with data processing running from SRAM1
Conditions Typ Max(1)
Symbol Parameter Voltage fHCLK Unit
- 25°C 55°C 85°C 105°C 125°C 25°C 55°C 85°C 105°C 125°C
scaling

26 MHz 3.35 3.55 4.1 4.95 6.45 4.00 6.20 11.0 15.0 22.0
16 MHz 2.15 2.35 2.9 3.7 5.25 3.10 4.70 8.70 14.0 20.0
8 MHz 1.15 1.35 1.9 2.7 4.2 1.90 3.50 7.50 13.0 19.0
Range 2 4 MHz 0.69 0.855 1.4 2.2 3.7 1.30 2.90 6.90 12.0 19.0
2 MHz 0.43 0.595 1.15 1.95 3.45 0.960 2.60 6.60 12.0 18.0
1 MHz 0.30 0.47 1 1.8 3.3 0.810 2.40 6.40 12.0 18.0
100 KHz 0.19 0.355 0.89 1.7 3.2 0.680 2.30 6.30 11.0 18.0
fHCLK = fHSE
DS12983 Rev 5

up to 48MHz Range 1
included, Boost 170 MHz 26.00 26.5 27.5 28.5 30.5 28.0 32.0 39.0 45.0 53.0(2)
Supply bypass mode mode
IDD(Run) current in PLL ON mA
Run mode above 48 150 MHz 21.50 22 22.5 23.5 25.5 23.0 25.0 31.0 41.0
46.0(2)
MHz all
peripherals 120 MHz 17.50 17.5 18.5 19.5 21.5 19.0 21.0 30.0 36.0 41.0
disable
80 MHz 11.50 12 12.5 13.5 15.5 13.0 15.0 23.0 29.0 35.0
72 MHz 10.50 11 11.5 12.5 14.5 12.0 14.0 21.0 27.0 34.0
Range 1
64 MHz 9.45 9.7 10.5 11.5 13.5 11.0 13.0 20.0 26.0 33.0
48 MHz 7.25 7.5 8.2 9.25 11 8.10 12.0 17.0 23.0 31.0

Electrical characteristics
32 MHz 4.90 5.15 5.85 6.9 8.7 6.00 8.90 15.0 21.0 29.0
24 MHz 3.75 4 4.7 5.7 7.5 4.80 7.50 13.0 19.0 27.0
16 MHz 2.60 2.85 3.5 4.5 6.3 4.00 6.10 12.0 18.0 26.0
93/235
 Table 23. Current consumption in Run and Low-power run modes,
94/235

Electrical characteristics
code with data processing running from SRAM1 (continued)
Conditions Typ Max(1)
Symbol Parameter Voltage fHCLK Unit
- 25°C 55°C 85°C 105°C 125°C 25°C 55°C 85°C 105°C 125°C
scaling

2 MHz 365 570 1200 2150 3850 1200 3100 7900 14000 22000
SYSCLK source is HSE 1 MHz 240 425 1050 2000 3650 960 2900 7700 14000 22000
in bypass mode
all peripherals disable 250 KHz 135 315 945 1850 3550 840 2800 7600 13000 22000
Supply
IDD current in 62.5 KHz 105 285 915 1850 3550 780 2700 7600 13000 22000
µA
(LPRun) Low-power 2 MHz 835 1050 1650 2600 4300 1800 3700 8600 14000 22000
run mode
SYSCLK source is HSI16 1 MHz 775 940 1550 2500 4150 1700 3600 8500 14000 22000
all peripherals disable 250 KHz 640 860 1450 2400 4100 1500 3500 8400 14000 22000
DS12983 Rev 5

62.5 KHz 640 830 1450 2350 4050 1600 3500 8400 14000 22000
1. Evaluated by characterization - Not tested in production, unless otherwise specified.
2. Guaranteed by test in production.

STM32G484xE
 Table 24. Typical current consumption in Run and Low-power run modes, with different codes

STM32G484xE
running from flash memory, ART enable (Cache ON Prefetch OFF)
Typ Typ Typ Typ
Conditions Single Bank Dual Bank Single Bank Dual Bank
Symbol Parameter Code Mode Mode Unit Mode Mode Unit

- Voltage scaling 25°C 25°C 25°C 25°C

Reduced
code(1) 3.65 3.7 140 142

Coremark 3.65 3.7 140 142

Range2
mA µA/MHz
fHCLK=26MHz Dhrystone2.1 3.65 3.7 140 142
Fibonacci 4.55 4.2 175 162
While(1) 2.90 3 112 115
Reduced
DS12983 Rev 5

fHCLK=fHSE code(1) 24.5 24.5 163 163

up to 48 MHZ
Supply included, bypass Coremark 24 24 160 160
IDD Range 1
current in mode PLL ON mA µA/MHz
(Run) fHCLK= 150 MHz Dhrystone2.1 24.5 24.5 163 163
Run mode above 48 MHz all
peripherals Fibonacci 22.5 28 150 187
disable
While(1) 19.5 20 130 133
Reduced
code(1) 29.5 29.5 174 174

Range 1 Coremark 29 29 171 171

Boost mode mA µA/MHz
Dhrystone2.1

Electrical characteristics
fHCLK= 170 MHz 29.5 29.5 174 174
Fibonacci 38 35 224 206
While(1) 23.5 24 138 141
95/235
 Table 24. Typical current consumption in Run and Low-power run modes, with different codes
96/235

Electrical characteristics
running from flash memory, ART enable (Cache ON Prefetch OFF) (continued)
Typ Typ Typ Typ
Conditions Single Bank Dual Bank Single Bank Dual Bank
Symbol Parameter Code Mode Mode Unit Mode Mode Unit

- Voltage scaling 25°C 25°C 25°C 25°C

Reduced
code(1) 920 970 460 485
Supply Coremark
SYSCLK source is HSI16 905 985 453 493
IDD current in
fHCLK = 2 MHz µA µA/MHz
(LPRun) Low-power Dhrystone2.1 915 915 458 458
all peripherals disable
run
Fibonacci 1,050 950 525 475
While(1) 930 875 465 438
1. Reduced code used for characterization results provided in Table 21, Table 23.
DS12983 Rev 5

STM32G484xE
 Table 25. Typical current consumption in Run and Low-power run modes, with different codes

STM32G484xE
running from SRAM1
Conditions Typ Typ
Symbol Parameter Code Unit Unit
Voltage
- 25°C 25°C
scaling

Reduced code(1) 3.25 125

Coremark 3.35 129
Range2
fHCLK=26 M Dhrystone2.1 3.30 mA 127 µA/MHz
Hz
Fibonacci 3.30 127
While(1) 3.40 131
Reduced code(1) 21.50 143
fHCLK = fHSE up to 48 MHZ Coremark 22.50 150
Range 1
DS12983 Rev 5

Supply current in included, bypass mode

IDD (Run) f = 150 Dhrystone2.1 21.50 mA 143 µA/MHz
Run mode PLL ON above 48 MHz all HCLK
MHz
peripherals disable Fibonacci 22.50 150
While(1) 20.00 133
Reduced code(1) 26.00 153
Range 1 Coremark 27.00 159
Boost mode
Dhrystone2.1 26.00 mA 153 µA/MHz
fHCLK=
170 MHz Fibonacci 27.50 162
While(1) 24.50 144

Electrical characteristics
Reduced code(1) 955 478
Coremark 890 445
IDD Supply current in fHCLK = fHSE = 2 MHz
Dhrystone2.1 915 µA 458 µA/MHz
(LPRun) Low-power run all peripherals disable
Fibonacci 880 440
While(1) 905 453
97/235

1. Reduced code used for characterization results provided in Table 21, Table 23.
 Table 26. Typical current consumption in Run and Low-power run modes, with different codes
98/235

Electrical characteristics
running from SRAM2
Conditions Typ Typ

Symbol Parameter fHCLK Unit Single Unit

Voltage Single bank
- bank
scaling mode
mode
Reduced code(1) 2.65 102
Coremark 2.80 108
Range2
fHCLK=26 M Dhrystone2.1 2.65 mA 102 µA/MHz
Hz
Fibonacci 2.60 100
While(1) 2.45 94
Reduced code(1) 17.50 117
fHCLK = fHSE up to 48 MHZ Coremark 18.00 120
Range 1
Supply current in included, bypass mode
DS12983 Rev 5

IDD (Run) f = 150 Dhrystone2.1 17.50 mA 117 µA/MHz

Run mode PLL ON above 48 MHz all HCLK
MHz
peripherals disable Fibonacci 17.00 113
While(1) 16 107
(1)
Reduced code 21.00 124
Range 1 Coremark 22.00 129
Boost mode
Dhrystone2.1 21.00 mA 124 µA/MHz
fHCLK=
170 MHz Fibonacci 20.50 121
While(1) 19.50 115
Reduced code(1) 890 445
SYSCLK source is HSI16 Coremark 830 415
IDD Supply current in
FHCLK = 2MHz Dhrystone2.1 825 µA 413 µA/MHz
(LPRun) Low-power run
all peripherals disable Fibonacci 830 415
While(1)

STM32G484xE
815 408
1. Reduced code used for characterization results provided in Table 21, Table 23.
 Table 27. Typical current consumption in Run and Low-power run modes, with different codes

STM32G484xE
running from CCMSRAM
Conditions Typ Typ

Symbol Parameter fHCLK Unit Single Unit

Voltage Single bank
- bank
scaling mode
mode

Reduced code(1) 2.75 106

Coremark 2.85 110
Range2
fHCLK=26 M Dhrystone2.1 2.75 mA 106 µA/MHz
Hz
Fibonacci 2.95 113
While(1) 2.60 100
(1)
Reduced code 18.00 120
DS12983 Rev 5

fHCLK = fHSE up to 48 MHZ Coremark 18.50 123

Range 1
Supply current in included, bypass mode
IDD (Run) f = 150 Dhrystone2.1 18.00 mA 120 µA/MHz
Run mode PLL ON above 48 MHz all HCLK
MHz
peripherals disable Fibonacci 19.00 127
While(1) 17.00 113
Reduced code(1) 22.00 129

Range 1 Coremark 22.50 132

Boost mode
Dhrystone2.1 22.00 mA 129 µA/MHz
fHCLK=
170 MHz Fibonacci 23.50 138

Electrical characteristics
While(1) 20.50 121
(1)
Reduced code 900 450
Coremark 850 425
SYSCLK source is HSI16
IDD Supply current in
FHCLK = 2MHz Dhrystone2.1 870 µA 435 µA/MHz
(LPRun) Low-power run
all peripherals disable
Fibonacci 850 425
99/235

While(1) 810 405

100/235

Electrical characteristics
1. Reduced code used for characterization results provided in Table 21, Table 23.

Table 28. Current consumption in Sleep and Low-power sleep mode flash memory ON
Condition Typ Max
Symbol Parameter fHCLK Unit
Voltage
- 25°C 55°C 85°C 105°C 125°C 25°C 55°C 85°C 105°C 125°C
scaling

26 MHz 0.98 1.1 1.75 2.4 3.75 1.90 3.50 7.60 13.0 19.0
16 MHz 0.67 0.835 1.45 2.15 3.5 1.50 3.00 7.10 12.0 19.0
8 MHz 0.44 0.605 1.25 2 3.35 1.10 2.70 6.70 12.0 19.0
Range 2 4 MHz 0.33 0.5 1.1 1.9 3.25 0.860 2.50 6.50 12.0 18.0
2 MHz 0.27 0.445 1.05 1.85 3.2 0.760 2.40 6.40 11.0 18.0
1 MHz 0.24 0.415 1.05 1.8 3.15 0.720 2.30 6.40 11.0 18.0
DS12983 Rev 5

100 KHz 0.21 0.385 0.995 1.8 3.1 0.670 2.30 6.30 11.0 18.0
fHCLK = fHSE Range 1
up to 48 MHz Boost 170 MHz 6.60 6.95 7.8 8.9 10.5 8.00 12.0 18.0 24.0 33.0
Supply current included, bypass mode
IDD (Sleep) mA
in sleep mode mode PLL ON
150 MHz 5.50 5.8 6.55 7.55 9.25 6.40 9.50 15.0 21.0 29.0
above 48 MHz all
peripherals disable 120 MHz 4.50 4.75 5.5 6.55 8.2 5.40 8.20 14.0 20.0 28.0
80 MHz 3.15 3.45 4.2 5.15 6.8 4.50 6.60 12.0 18.0 26.0
72 MHz 2.85 3.15 3.9 4.9 6.55 4.20 6.30 12.0 18.0 26.0
Range 1 64 MHz 2.60 2.9 3.65 4.6 6.3 3.50 6.00 12.0 18.0 26.0
48 MHz 1.90 2.2 3 3.65 5.3 3.20 5.30 11.0 17.0 25.0
32 MHz 1.40 1.65 2.4 3.2 4.85 2.70 4.80 11.0 17.0 25.0

STM32G484xE
24 MHz 1.10 1.35 2.1 3 4.65 2.30 4.50 9.80 16.0 25.0
16 MHz 0.83 1.1 1.85 2.75 4.35 1.90 4.10 9.40 16.0 24.0
 Table 28. Current consumption in Sleep and Low-power sleep mode flash memory ON (continued)

STM32G484xE
Condition Typ Max
Symbol Parameter fHCLK Unit
Voltage
- 25°C 55°C 85°C 105°C 125°C 25°C 55°C 85°C 105°C 125°C
scaling

2 MHz 205 430 1150 2050 3600 1600 2900 7800 14000 22000
SYSCLK source is HSE 1 MHz 165 400 1100 2000 3550 1100 2900 7700 14000 22000
in bypass mode μA
all peripherals disable 250 KHz 145 370 1100 2000 3550 820 2800 7700 13000 22000
Supply current 62.5 KHz 140 365 1050 2000 3550 810 2800 7700 13000 22000
IDD
in Low-power
(LPSleep) 2 MHz
sleep mode 700 925 1650 2550 4100 1600 3600 8400 14000 22000

SYSCLK source is HSI16 1 MHz 710 925 1600 2550 4100 1600 3600 8400 14000 22000
μA
all peripherals disable 250 KHz 670 910 1600 2500 4050 1600 3600 8400 14000 22000
62.5 KHz 685 910 1600 2500 4050 1600 3600 8400 14000 22000
DS12983 Rev 5

Table 29. Current consumption in low-power sleep modes, flash memory in power-down
Condition Typ Max
Symbol Parameter fHCLK Unit
Voltage
- 25°C 55°C 85°C 105°C 125°C 25°C 55°C 85°C 105°C 125°C
scaling

2 MHz 210 385 1150 2050 3550 910 2900 7800 14000 22000
SYSCLK source is HSE 1 MHz 150 360 1100 2000 3550 860 2900 7700 14000 22000
in bypass mode
all peripherals disable 250 KHz 120 330 1050 2000 3500 820 2700 7600 13000 21000

Electrical characteristics
Supply current 62.5 KHz 110 330 1050 1950 3500 810 2700 7600 13000 21000
IDD
in low-power μA
(LPSleep) 2 MHz
sleep mode 675 900 1600 2500 4050 1600 3600 8500 14000 22000

SYSCLK source is HSI16 1 MHz 695 890 1600 2500 4050 1600 3600 8400 14000 22000
all peripherals disable 250 KHz 640 885 1600 2500 4050 1600 3600 8500 14000 22000
62.5 KHz 690 880 1600 2500 4050 1400 3000 7000 12000 19000
101/235
 Table 30. Current consumption in Stop 1 mode
102/235

Electrical characteristics
Conditions Typ Max(1)
Symbol Parameter Unit
- VDD 25°C 55°C 85°C 105°C 125°C 25°C 55°C 85°C 105°C 125°C

1.8 V 80 250 830 1550 2850 630 2100 5900 11000 18000
Supply current
IDD in Stop 1 2.4 V 80 250 835 1600 2850 640 2100 5900 11000 18000
RTC disabled
(Stop 1) mode, RTC 3.0 V 80.5 255 840 1600 2900 640 2200 6000 11000 18000
disabled
3.6 V 81.5 255 845 1600 2900 640 2200 6000 11000 18000
1.8 V 80.5 255 830 1550 2850 640 2100 5900 11000 18000
2.4 V 81 255 835 1600 2850 640 2200 5900 11000 18000
RTC clocked by LSI
3.0 V 81.5 255 835 1600 2850 640 2200 6000 11000 18000
3.6 V 82 255 845 1600 2900 650 2200 6000 11000 18000
µA
1.8 V 80 255 830 1550 2850 - - - - -
DS12983 Rev 5

IDD Supply current

(Stop 1 in Stop 1 RTC clocked by LSE 2.4 V 80.5 255 830 1600 2850 - - - - -
with mode, RTC bypassed at 32768 Hz 3.0 V 81.5 255 835 1600 2900 - - - - -
RTC) enabled
3.6 V 83 260 845 1600 2900 - - - - -
1.8 V 83.5 220 655 1300 - - - - - -
RTC clocked by LSE 2.4 V 84 220 660 1300 - - - - - -
quartz in low drive mode
at 32768 Hz 3.0 V 84.5 220 660 1300 - - - - - -
3.6 V 87 220 660 1300 - - - - - -
Wakeup clock is HSI6,
3.0 V 1.73 - - - - - - - - -
IDD Supply current voltage Range 1
(wakeu during wakeup Wakeup clock is
from mA
p from HSI6 = 4 MHz,
Stop 1 Stop 1 mode 3.0 V 1.29 - - - - - - - - -
(HPRE = 4),
voltage Range 2

STM32G484xE
1. Evaluated by characterization - Not tested in production, unless otherwise specified.
 Table 31. Current consumption in Stop 0 mode

STM32G484xE
Conditions Typ Max(1)
Symbol Parameter Unit
- VDD 25°C 55°C 85°C 105°C 125°C 25°C 55°C 85°C 105°C 125°C

1.8 V 190 380 980 1750 3100 790 2400 6500 11000 19000
Supply current 2.4 V 190 380 985 1750 3100 790 2400 6400 11000 19000
IDD(Stop 0) in Stop 0 mode, - µA
RTC disabled 3V 190 380 985 1750 3100 800 2400 6500 12000 19000
3.6 V 190 380 985 1750 3100 800 2500 6500 12000 19000
1. Evaluated by characterization - Not tested in production, unless otherwise specified.

Table 32. Current consumption in Standby mode

Conditions Typ Max(1)
Symbol Parameter Unit
VDD
DS12983 Rev 5

- 25°C 55°C 85°C 105°C 125°C 25°C 55°C 85°C 105°C 125°C

1.8 V 100 275 1350 3450 8450 200 1100 4100 9700 27000
No 2.4 V 110 325 1600 4100 10000 220 1200 4800 12000 31000
independent
watchdog 3V 130 385 1900 4850 12000 240 1400 5500 13000 35000
Supply current in Standby
IDD mode (backup registers 3.6 V 180 530 2400 6050 14500 360 1700 6300 15000 40000
retained), nA
(Standby) 1.8 V 300 - - - - - - - - -
RTC disabled
With 2.4 V 365 - - - - - - - - -
independent
watchdog 3V 435 - - - - - - - - -

Electrical characteristics
3.6 V 545 - - - - - - - - -
103/235
 Table 32. Current consumption in Standby mode (continued)
104/235

Electrical characteristics
Conditions Typ Max(1)
Symbol Parameter Unit
- VDD 25°C 55°C 85°C 105°C 125°C 25°C 55°C 85°C 105°C 125°C

1.8 V 540 725 1800 3850 8850 660 1500 4600 11000 27000
RTC clocked
by LSI, no 2.4 V 700 920 2150 4650 10500 860 1900 5300 12000 31000
independent 3V 885 1150 2650 5550 12500 1100 2200 6300 14000 36000
watchdog
3.6 V 1100 1450 3350 7000 15500 1400 2700 7400 16000 41000
nA
1.8 V 580 - - - - - - - - -
RTC clocked
by LSI, with 2.4 V 760 - - - - - - - - -
independent 3V 960 - - - - - - - - -
Supply current in Standby watchdog
IDD 3.6 V 1200 - - - - - - - - -
mode (backup registers
(Standby with retained),
DS12983 Rev 5

RTC) 1.8 V 410 580 1600 3650 8600 - - - - -

RTC enabled RTC clocked
by LSE 2.4 V 545 750 1950 4450 10500 - - - - -
bypassed at 3V 830 1150 2750 5800 13000 - - - - -
32768 Hz
3.6 V 2200 3050 5550 9550 18000 - - - - -
nA
1.8 V 370 570 1350 3150 7100 - - - - -
RTC clocked
by LSE 2.4 V 495 715 1650 3800 8350 - - - - -
quartz(2) in
low drive 3V 655 915 2100 4550 9850 - - - - -
mode
3.6 V 875 1350 2800 5750 12000 - - - - -
1.8 V 300 825 2950 6300 12550 - - - - -
Supply current to be added in 2.4 V 305 875 2900 6400 12500 - - - - -
IDD
Standby mode when SRAM2 - nA
(SRAM2)(3) 3V 305 865 2950 6150 12500 - - - - -
is retained

STM32G484xE
3.6 V 310 870 3000 6450 13000 - - - - -
 Table 32. Current consumption in Standby mode (continued)

STM32G484xE
Conditions Typ Max(1)
Symbol Parameter Unit
- VDD 25°C 55°C 85°C 105°C 125°C 25°C 55°C 85°C 105°C 125°C

Wakeup
IDD (wakeup Supply current during wakeup clock is
3V 2.46 - - - - - - - - - mA
from Standby) from Standby mode HSI16 =
16 MHz(4)
1. Evaluated by characterization - Not tested in production, unless otherwise specified.
2. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors.
3. The supply current in Standby with SRAM2 mode is: IDD_ALL(Standby) + IDD_ALL(SRAM2). The supply current in Standby with RTC with SRAM2 mode is:
IIDD_ALL(Standby + RTC) + IDD_ALL(SRAM2).
4. Wakeup with code execution from flash memory. Average value given for a typical wakeup time as specified in Table 36: Low-power mode wakeup timings.

Table 33. Current consumption in Shutdown mode

DS12983 Rev 5

Conditions Typ Max(1)

Symbol Parameter Unit
- VDD 25°C 55°C 85°C 105°C 125°C 25°C 55°C 85°C 105°C 125°C

Supply current 1.8 V 19 140 885 2500 6600 78.0 490 3100 8100 24000
in Shutdown
IDD mode (backup 2.4 V 28 180 1050 2950 7800 94.0 570 3600 9300 27000
- nA
(Shutdown) registers 3V 43 230 1300 3600 9300 130 680 4100 11000 31000
retained) RTC
disabled 3.6 V 87 360 1750 4700 12000 190 870 4900 13000 35000

Electrical characteristics
105/235
 Table 33. Current consumption in Shutdown mode (continued)
106/235

Electrical characteristics
Conditions Typ Max(1)
Symbol Parameter Unit
- VDD 25°C 55°C 85°C 105°C 125°C 25°C 55°C 85°C 105°C 125°C

RTC 1.8 V 330 445 1150 2700 6800 - - - - -

clocked by
LSE 2.4 V 460 605 1450 3350 8150 - - - - -
Supply current bypassed 3V 745 1000 2200 4550 10500 - - - - -
in Shutdown at 32768
IDD Hz 3.6 V 2100 2850 4900 8150 15500 - - - - -
mode (backup
(Shutdown with registers nA
RTC) RTC 1.8 V 285 450 1050 2500 - - - - - -
retained) RTC clocked by
enabled LSE 2.4 V 410 585 1300 3050 - - - - - -
quartz(2) in 3V 565 770 1750 3750 - - - - - -
low drive
mode 3.6 V 780 1200 2400 4850 - - - - - -
DS12983 Rev 5

Supply current Wakeup

IDD(wakeup
during wakeup clock is
from 3V 1.6 - - - - - - - - - mA
from Shutdown HSI16 =
Shutdown)
mode 16 MHz(3)
1. Evaluated by characterization - Not tested in production, unless otherwise specified.
2. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors.
3. Wakeup with code execution from flash memory. Average value given for a typical wakeup time as specified in Table 36: Low-power mode wakeup timings.

STM32G484xE
 Table 34. Current consumption in VBAT mode

STM32G484xE
Conditions Typ Max(1)
Symbol Parameter Unit
- VBAT 25°C 55°C 85°C 105°C 125°C 25°C 55°C 85°C 105°C 125°C

1.8 V 4 17 92 245 600 - - - - -

RTC 2.4 V 5 20 105 280 690 - - - - -

disabled 3V 6 24 125 330 805 - - - - -
3.6 V 16 54 260 675 1650 - - - - -
RTC 1.8 V 310 315 350 470 - - - - - -
enabled and
Backup domain clocked by 2.4 V 435 440 500 665 - - - - - -
IDD(VBAT) nA
supply current LSE 3V 720 815 1050 1350 - - - - - -
bypassed at
32768 Hz 3.6 V 2150 2600 3400 4050 - - - - - -
DS12983 Rev 5

1.8 V 270 345 455 715 835 - - - - -

RTC
enabled and 2.4 V 385 455 650 910 910 - - - - -
clocked by
LSE 3V 525 600 910 1150 1000 - - - - -
quartz(2)
3.6 V 710 995 1250 1700 1900 - - - - -
1. Evaluated by characterization results - Not tested in production, unless otherwise specified.
2. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors.

Electrical characteristics
107/235
Electrical characteristics STM32G484xE

IO system current consumption

The current consumption of the I/O system has two components: static and dynamic.

I/O static current consumption

All the I/Os used as inputs with pull-up generate current consumption when the pin is
externally held low. The value of this current consumption can be simply computed by using
the pull-up/pull-down resistors values given in Table 54: I/O static characteristics.
For the output pins, any external pull-down or external load must also be considered to
estimate the current consumption.
Additional I/O current consumption is due to I/Os configured as inputs if an intermediate
voltage level is externally applied. This current consumption is caused by the input Schmitt
trigger circuits used to discriminate the input value. Unless this specific configuration is
required by the application, this supply current consumption can be avoided by configuring
these I/Os in analog mode. This is notably the case of ADC, OPAMP, COMP input pins
which should be configured as analog inputs.
Caution: Any floating input pin can also settle to an intermediate voltage level or switch inadvertently,
as a result of external electromagnetic noise. To avoid current consumption related to
floating pins, they must either be configured in analog mode, or forced internally to a definite
digital value. This is done either by using pull-up/down resistors or by configuring the pins in
output mode.
I/O dynamic current consumption
In addition to the internal peripheral current consumption measured previously (see
Table 36: Low-power mode wakeup timings), the I/Os used by an application also contribute
to the current consumption. When an I/O pin switches, it uses the current from the I/O
supply voltage to supply the I/O pin circuitry and to charge/discharge the capacitive load
(internal or external) connected to the pin:

I SW = V DDIOx × f SW × C

where
ISW is the current sunk by a switching I/O to charge/discharge the capacitive load
VDD is the I/O supply voltage
fSW is the I/O switching frequency
C is the total capacitance seen by the I/O pin: C = CINT+ CEXT + CS
CS is the PCB board capacitance including the pad pin.
The test pin is configured in push-pull output mode and is toggled by software at a fixed
frequency.

108/235 DS12983 Rev 5

STM32G484xE Electrical characteristics

On-chip peripheral current consumption

The current consumption of the on-chip peripherals is given in Table 35. The MCU is placed
under the following conditions:
• All I/O pins are in Analog mode
• The given value is calculated by measuring the difference of the current consumptions:
– when the peripheral is clocked on
– when the peripheral is clocked off
• Ambient operating temperature and supply voltage conditions summarized in Table 14:
Voltage characteristics
• The power consumption of the digital part of the on-chip peripherals is given in
Table 35. The power consumption of the analog part of the peripherals (where
applicable) is indicated in each related section of the datasheet.

Table 35. Peripheral current consumption

Range 1 Range 1 Low-power
Bus Peripheral Boost Normal Range 2 run and Unit
mode mode sleep

Bus Matrix 6.12 5.69 4.70 6.11

AHB1 to APB1 bridge 0.26 0.25 0.22 0.03
- AHB1 to APB2 bridge 0.39 0.37 0.32 0.03 µA/MHz

FSMC 10.21 9.52 7.87 10.28

QUADSPI 3.51 3.27 2.69 3.51
CORDIC 1.28 1.19 0.98 0.78
CRC 0.74 0.68 0.57 0.63
DMA 1 2.83 2.64 2.17 2.75
DMA 2 3.11 2.90 2.39 2.43
AHB1 µA/MHz
DMAMUX 6.71 6.26 5.17 6.68
SRAM1 0.58 0.54 0.44 0.54
FLASH 6.46 6.01 4.95 6.15
FMAC 4.59 4.29 3.57 3.83

DS12983 Rev 5 109/235

199
Electrical characteristics STM32G484xE

Table 35. Peripheral current consumption (continued)

Range 1 Range 1 Low-power
Bus Peripheral Boost Normal Range 2 run and Unit
mode mode sleep

ADC1/ADC2 6.24 5.80 4.77 5.88

ADC3/ADC4/ADC5 8.21 7.64 6.29 8.14
DAC1 4.70 4.38 3.63 4.40
DAC2 2.51 2.34 1.93 2.14
DAC3 4.62 4.31 3.57 4.15
DAC4 4.31 4.01 3.32 3.90
GPIOA 0.09 0.08 0.07 0.14
GPIOB 0.10 0.09 0.07 0.03
AHB2 GPIOC 0.10 0.09 0.08 0.03 µA/MHz

GPIOD 0.06 0.06 0.03 0.05

GPIOE 0.23 0.22 0.18 0.10
GPIOF 0.07 0.07 0.05 0.02
GPIOG 0.25 0.24 0.20 0.24
SRAM2 0.39 0.37 0.29 0.28
CCM SRAM 0.29 0.27 0.23 0.22
RNG 2.09 1.95 NA NA
AES 2.84 2.64 2.19 2.43

110/235 DS12983 Rev 5

STM32G484xE Electrical characteristics

Table 35. Peripheral current consumption (continued)

Range 1 Range 1 Low-power
Bus Peripheral Boost Normal Range 2 run and Unit
mode mode sleep

CRS 0.74 0.68 0.57 0.51

FDCAN1/FDCAN2/FDCAN3 22.20 20.68 17.10 21.15
I2C1 1.29 1.20 0.99 1.28
I2C2 1.29 1.20 0.99 1.28
I2C3 1.25 1.17 0.96 1.56
I2C4 1.25 1.16 0.96 1.97
LPTIM1 1.11 1.03 0.85 1.42
LPUART1 1.91 1.78 1.47 2.03
PWR 0.71 0.65 0.53 0.53
RTC 2.64 2.46 2.07 3.26
SPI2/I2S2 4.05 3.77 3.11 4.16
SPI3/I2S3 4.08 3.81 3.13 4.49
APB1 TIM2 7.97 7.42 6.16 8.29 µA/MHz

TIM3 6.37 5.93 4.92 6.81

TIM4 6.43 5.98 4.97 6.50
TIM5 8.28 7.71 6.38 8.11
TIM6 1.22 1.13 0.94 1.45
TIM7 1.28 1.18 0.98 1.56
UART4 2.51 2.33 1.92 3.14
UART5 2.79 2.60 2.14 3.34
USART2 2.75 2.56 2.12 3.11
USART3 2.71 2.52 2.08 2.47
USB 0.46 0.43 NA NA
UCPD 2.46 2.28 1.89 NA
WWDG 0.42 0.39 0.31 0.42

DS12983 Rev 5 111/235

199
Electrical characteristics STM32G484xE

Table 35. Peripheral current consumption (continued)

Range 1 Range 1 Low-power
Bus Peripheral Boost Normal Range 2 run and Unit
mode mode sleep

HRTIM 69.98 65.11 53.68 60.95

SAI1 2.67 2.48 2.05 2.64
SPI1 1.99 1.86 1.54 2.02
SPI4 1.99 1.86 1.54 2.02
TIM1 10.85 10.13 8.40 9.93
TIM8 10.67 9.96 8.25 9.82
APB2 µA/MHz
TIM15 4.81 4.48 3.71 4.57
TIM16 3.71 3.45 2.88 3.45
TIM17 3.66 3.41 2.83 3.81
TIM20 10.71 9.99 8.29 10.00
USART1 2.49 2.31 1.91 2.49
SYSCFG/COMP/OPAMP/VREFBUF 1.63 1.52 1.25 0.91

112/235 DS12983 Rev 5

STM32G484xE Electrical characteristics

Table 35. Peripheral current consumption (continued)

Range 1 Range 1 Low-power
Bus Peripheral Boost Normal Range 2 run and Unit
mode mode sleep

ADC1/
independent clock domain 0.72 0.67 0.53 0.63
ADC2
ADC3/
ADC4/ independent clock domain 0.67 0.62 0.50 0.22
ADC5
FDCAN1/
FDCAN2/ independent clock domain 11.62 10.84 8.95 10.24
FDCAN3
I2C1 independent clock domain 4.03 3.76 3.12 4.15
I2C2 independent clock domain 3.78 3.52 2.93 3.23
I2C3 independent clock domain 2.72 2.55 2.11 2.65
I2C4 independent clock domain 3.95 3.67 3.04 2.81
I2S2 independent clock domain 1.49 1.40 1.15 1.63
Independent I2S3 independent clock domain 1.52 1.43 1.16 2.15 µA/MHz
clock domain
LPTIM1 independent clock domain 4.00 3.71 3.08 3.57
LPUART1 independent clock domain 4.43 4.13 3.45 4.02
QUADSPI independent clock domain 0.54 0.51 0.44 0.75
RNG independent clock domain 0.83 0.87 NA NA
USB independent clock domain 1.10 1.17 NA NA
SAI1 independent clock domain 3.36 3.14 2.58 3.25
UART4 independent clock domain 6.60 6.17 5.14 6.02
UART5 independent clock domain 6.60 6.16 5.12 6.12
USART1 independent clock domain 7.62 7.12 5.89 6.90
USART2 independent clock domain 7.37 6.86 5.70 6.72
USART3 independent clock domain 7.98 7.44 6.17 8.21
All - 369.00 316.04 266.18 325.00 µA/MHz

DS12983 Rev 5 113/235

199
Electrical characteristics STM32G484xE

5.3.6 Wakeup time from low-power modes and voltage scaling

transition times
The wakeup times given in Table 36 are the latency between the event and the execution of
the first user instruction.
The device goes in low-power mode after the WFE (Wait For Event) instruction.

Table 36. Low-power mode wakeup timings(1)

Symbol Parameter Conditions Typ Max Unit

Wakeup time from Sleep

tWUSLEEP - 11 12
mode to Run mode Nb of
Wakeup time from Low- CPU
tWULPSLEEP power sleep mode to Low- - cycles
10 11
power run mode
Wake up time from Stop 0 Range 1 Wakeup clock HSI16 = 16 MHz 5.8 6
mode to Run mode in flash
memory Range 2 Wakeup clock HSI16 = 16 MHz 18.4 19.1
tWUSTOP0
Wake up time from Stop 0 Range 1 Wakeup clock HSI16 = 16 MHz 2.8 3
mode to Run mode in
SRAM1 Range 2 Wakeup clock HSI16 = 16 MHz 2.9 3

Wake up time from Stop 1 Range 1 Wakeup clock HSI16 = 16 MHz 9.5 9.8
mode to Run in flash
memory Range 2 Wakeup clock HSI16 = 16 MHz 21.9 22.7

Wake up time from Stop 1 Range 1 Wakeup clock HSI16 = 16 MHz 6.6 6.9
mode to Run mode in
SRAM1 Range 2 Wakeup clock HSI16 = 16 MHz 6.4 6.6
tWUSTOP1
Wake up time from Stop 1
mode to Low-power run Regulator in 26.1 27.1(2)
Wakeup clock µs
mode in flash memory low-power
HSI16 = 16 MHz,
Wake up time from Stop 1 mode (LPR=1 with HPRE = 8
mode to Low-power run in PWR_CR1)
14.4 15(2)
mode in SRAM1
Wakeup time from Standby
tWUSTBY Range 1 Wakeup clock HSI16 = 16 MHz 29.7 33.8
mode to Run mode
tWUSTBY Wakeup time from Standby
Range 1 Wakeup clock HSI16 = 16 MHz 29.7 33.5
SRAM2 with SRAM2 to Run mode

Wakeup time from

tWUSHDN Shutdown mode to Run Range 1 Wakeup clock HSI16 = 16 MHz 267.9 274.6(2)
mode
Wakeup time from Low-
Wakeup clock HSI16 = 16 MHz
tWULPRUN power run mode to Run 5 7
with HPRE = 8
mode(3)
1. Evaluated by characterization - Not tested in production.
2. Characterization results for temperature range from 0°C to 125°C.
3. Time until REGLPF flag is cleared in PWR_SR2.

114/235 DS12983 Rev 5

STM32G484xE Electrical characteristics

Table 37. Regulator modes transition times(1)

Symbol Parameter Conditions Typ Max Unit

Regulator transition time from Range

Wakeup clock HSI16 = 16 MHz
tVOST 2 to Range 1 or 20 40 μs
with HPRE = 8
Range 1 to Range 2(2)
1. Evaluated by characterization - Not tested in production.
2. Time until VOSF flag is cleared in PWR_SR2.

Table 38. Wakeup time using USART/LPUART(1)

Symbol Parameter Conditions Typ Max Unit

Wakeup time needed to calculate the Stop 0 mode - 1.7

tWUUSART maximum USART/LPUART baudrate
allowing to wakeup up from stop mode μs
tWULPUART Stop 1 mode - 8.5
when USART/LPUART clock source is
HSI16
1. Guaranteed by design - Not tested in production.

5.3.7 External clock source characteristics

High-speed external user clock generated from an external source
In bypass mode the HSE oscillator is switched off and the input pin is a standard GPIO.
The external clock signal has to respect the I/O characteristics in Section 5.3.14. However,
the recommended clock input waveform is shown in Figure 19: High-speed external clock
source AC timing diagram.

Table 39. High-speed external user clock characteristics(1)

Symbol Parameter Conditions Min Typ Max Unit

Voltage scaling
- 8 48
User external clock Range 1
fHSE_ext MHz
source frequency Voltage scaling
- 8 26
Range 2
OSC_IN input pin high
VHSEH - 0.7 VDD - VDD
level voltage
V
OSC_IN input pin low
VHSEL - VSS - 0.3 VDD
level voltage
Voltage scaling
7 - -
tw(HSEH) Range 1
OSC_IN high or low time ns
tw(HSEL) Voltage scaling
18 - -
Range 2
1. Guaranteed by design - Not tested in production.

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Figure 19. High-speed external clock source AC timing diagram

tw(HSEH)

VHSEH
90%
10%
VHSEL

tr(HSE) t
tf(HSE) tw(HSEL)
THSE

MS19214V2

Low-speed external user clock generated from an external source

In bypass mode the LSE oscillator is switched off and the input pin is a standard GPIO.
The external clock signal has to respect the I/O characteristics in Section 5.3.14. However,
the recommended clock input waveform is shown in Figure 20.

Table 40. Low-speed external user clock characteristics(1)

Symbol Parameter Conditions Min Typ Max Unit

User external clock source

fLSE_ext - - 32.768 1000 kHz
frequency
OSC32_IN input pin high
VLSEH - 0.7 VDD - VDD
level voltage
V
OSC32_IN input pin low level
VLSEL - VSS - 0.3 VDD
voltage
tw(LSEH)
OSC32_IN high or low time - 250 - - ns
tw(LSEL)
1. Guaranteed by design - Not tested in production.

Figure 20. Low-speed external clock source AC timing diagram

tw(LSEH)

VLSEH
90%
10%
VLSEL

tr(LSE) t
tf(LSE) tw(LSEL)
TLSE

MS19215V2

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High-speed external clock generated from a crystal/ceramic resonator

The high-speed external (HSE) clock can be supplied with a 4 to 48 MHz crystal/ceramic
resonator oscillator. All the information given in this paragraph are based on design
simulation results obtained with typical external components specified in Table 41. In the
application, the resonator and the load capacitors have to be placed as close as possible to
the oscillator pins in order to minimize output distortion and startup stabilization time. Refer
to the crystal resonator manufacturer for more details on the resonator characteristics
(frequency, package, accuracy).

Table 41. HSE oscillator characteristics(1)

Symbol Parameter Conditions(2) Min Typ Max Unit

fOSC_IN Oscillator frequency - 4 8 48 MHz

RF Feedback resistor - - 200 - kΩ
(3)
During startup - - 5.5
VDD = 3 V,
Rm = 30 Ω, - 0.44 -
CL = 10 pF@8 MHz
VDD = 3 V,
Rm = 45 Ω, - 0.45 -
CL = 10 pF@8 MHz

IDD(HSE) HSE current consumption VDD = 3 V, mA

Rm = 30 Ω, - 0.68 -
CL = 5 pF@48 MHz
VDD = 3 V,
Rm = 30 Ω, - 0.94 -
CL = 10 pF@48 MHz
VDD = 3 V,
Rm = 30 Ω, - 1.77 -
CL = 20 pF@48 MHz
Maximum critical crystal
Gm Startup - - 1.5 mA/V
transconductance
tSU(HSE)(4) Startup time VDD is stabilized - 2 - ms
1. Guaranteed by design - Not tested in production.
2. Resonator characteristics given by the crystal/ceramic resonator manufacturer.
3. This consumption level occurs during the first 2/3 of the tSU(HSE) startup time
4. tSU(HSE) is the startup time measured from the moment it is enabled (by software) to a stabilized 8 MHz
oscillation is reached. This value is measured for a standard crystal resonator and it can vary significantly
with the crystal manufacturer

For CL1 and CL2, it is recommended to use high-quality external ceramic capacitors in the
5 pF to 20 pF range (typ.), designed for high-frequency applications, and selected to match
the requirements of the crystal or resonator (see Figure 21). CL1 and CL2 are usually the
same size. The crystal manufacturer typically specifies a load capacitance which is the
series combination of CL1 and CL2. PCB and MCU pin capacitance must be included (10 pF
can be used as a rough estimate of the combined pin and board capacitance) when sizing
CL1 and CL2.

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Note: For information on selecting the crystal, refer to the application note AN2867 “Oscillator
design guide for ST microcontrollers” available from the ST website www.st.com.

Figure 21. Typical application with an 8 MHz crystal

Resonator with integrated

capacitors
CL1

OSC_IN fHSE
Bias
8 MHz controlled
resonator RF gain

REXT (1) OSC_OUT

CL2

MS19876V1

1. REXT value depends on the crystal characteristics.

Low-speed external clock generated from a crystal resonator

The low-speed external (LSE) clock can be supplied with a 32.768 kHz crystal resonator
oscillator. All the information given in this paragraph are based on design simulation results
obtained with typical external components specified in Table 42. In the application, the
resonator and the load capacitors have to be placed as close as possible to the oscillator
pins in order to minimize output distortion and startup stabilization time. Refer to the crystal
resonator manufacturer for more details on the resonator characteristics (frequency,
package, accuracy).

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Table 42. LSE oscillator characteristics (fLSE = 32.768 kHz)(1)

Symbol Parameter Conditions(2) Min Typ Max Unit

LSEDRV[1:0] = 00
- 250 -
Low drive capability
LSEDRV[1:0] = 01
- 315 -
Medium low drive capability
IDD(LSE) LSE current consumption nA
LSEDRV[1:0] = 10
- 500 -
Medium high drive capability
LSEDRV[1:0] = 11
- 630 -
High drive capability
LSEDRV[1:0] = 00
- - 0.5
Low drive capability
LSEDRV[1:0] = 01
- - 0.75
Maximum critical crystal Medium low drive capability
Gmcritmax µA/V
gm LSEDRV[1:0] = 10
- - 1.7
Medium high drive capability
LSEDRV[1:0] = 11
- - 2.7
High drive capability
tSU(LSE)(3) Startup time VDD is stabilized - 2 - s
1. Guaranteed by design - Not tested in production.
2. Refer to the note and caution paragraphs below the table, and to the application note AN2867 “Oscillator
design guide for ST microcontrollers”.
3. tSU(LSE) is the startup time measured from the moment it is enabled (by software) to a stabilized
32.768 kHz oscillation is reached. This value is measured for a standard crystal and it can vary significantly
with the crystal manufacturer

Note: For information on selecting the crystal, refer to the application note AN2867 “Oscillator
design guide for ST microcontrollers” available from the ST website www.st.com.

Figure 22. Typical application with a 32.768 kHz crystal

Resonator with integrated

capacitors
CL1

OSC32_IN fLSE

32.768 kHz Drive

resonator programmable
amplifier

OSC32_OUT
CL2

MS30253V2

Note: An external resistor is not required between OSC32_IN and OSC32_OUT and it is forbidden
to add one.

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5.3.8 Internal clock source characteristics

The parameters given in Table 43 are derived from tests performed under ambient
temperature and supply voltage conditions summarized in Table 17: General operating
conditions. The provided curves are characterization results, not tested in production.

High-speed internal (HSI16) RC oscillator

Table 43. HSI16 oscillator characteristics(1)

Symbol Parameter Conditions Min Typ Max Unit

fHSI16 HSI16 Frequency VDD=3.0 V, TA=30 °C 15.88 - 16.08 MHz

Trimming code is not a
0.2 0.3 0.4
multiple of 64
TRIM HSI16 user trimming step %
Trimming code is a
-4 -6 -8
multiple of 64
DuCy(HSI16)(2) Duty Cycle - 45 - 55 %

HSI16 oscillator frequency TA= 0 to 85 °C -1 - 1 %

∆Temp(HSI16)
drift over temperature TA= -40 to 125 °C -2 - 1.5 %
HSI16 oscillator frequency
∆VDD(HSI16) VDD=1.62 V to 3.6 V -0.1 - 0.05 %
drift over VDD
HSI16 oscillator start-up
tsu(HSI16)(2) - - 0.8 1.2 μs
time
HSI16 oscillator
tstab(HSI16)(2) - - 3 5 μs
stabilization time
HSI16 oscillator power
IDD(HSI16)(2) - - 155 190 μA
consumption
1. Evaluated by characterization - Not tested in production.
2. Guaranteed by design - Not tested in production.

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Figure 23. HSI16 frequency versus temperature

MHz
16.4
+2 %
16.3
+1.5 %
16.2
+1 %

16.1

16

15.9

15.8 -1 %

-1.5 %
15.7
-2 %
15.6
-40 -20 0 20 40 60 80 100 120 °C
Mean min max
MSv39299V2

High-speed internal 48 MHz (HSI48) RC oscillator

Table 44. HSI48 oscillator characteristics(1)

Symbol Parameter Conditions Min Typ Max Unit

fHSI48 HSI48 Frequency VDD=3.0V, TA=30°C - 48 - MHz

TRIM HSI48 user trimming step - - 0.11(2) 0.18(2) %
USER TRIM HSI48 user trimming
±32 steps ±3(3) ±3.5(3) - %
COVERAGE coverage
DuCy(HSI48) Duty Cycle - 45(2) - 55(2) %
VDD = 3.0 V to 3.6 V,
Accuracy of the HSI48 - - ±3(3)
TA = –15 to 85 °C
ACCHSI48_REL oscillator over temperature %
(factory calibrated) VDD = 1.65 V to 3.6 V,
- - ±4.5(3)
TA = –40 to 125 °C

HSI48 oscillator frequency VDD = 3 V to 3.6 V - 0.025(3) 0.05(3)

DVDD(HSI48) %
drift with VDD VDD = 1.65 V to 3.6 V - 0.05(3) 0.1(3)
HSI48 oscillator start-up
tsu(HSI48) - - 2.5(2) 6(2) μs
time
HSI48 oscillator power
IDD(HSI48) - - 340(2) 380(2) μA
consumption

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Table 44. HSI48 oscillator characteristics(1) (continued)

Symbol Parameter Conditions Min Typ Max Unit

Next transition jitter

NT jitter Accumulated jitter on 28 - - +/-0.15(2) - ns
cycles(4)
Paired transition jitter
PT jitter Accumulated jitter on 56 - - +/-0.25(2) - ns
cycles(4)
1. VDD = 3 V, TA = –40 to 125°C unless otherwise specified.
2. Guaranteed by design - Not tested in production.
3. Evaluate by characterization - Not tested in production.
4. Jitter measurement are performed without clock source activated in parallel.

Figure 24. HSI48 frequency versus temperature

%
6

-2

-4

-6
-50 -30 -10 10 30 50 70 90 110 130
°C
Avg min max
MSv40989V1

Low-speed internal (LSI) RC oscillator

Table 45. LSI oscillator characteristics(1)

Symbol Parameter Conditions Min Typ Max Unit

VDD = 3.0 V,
31.04 - 32.96
TA = 30 °C
fLSI LSI Frequency kHz
VDD = 1.62 to 3.6 V,
29.5 - 34
TA = -40 to 125 °C
LSI oscillator start-up
tSU(LSI)(2) - - 80 130 μs
time

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Table 45. LSI oscillator characteristics(1) (continued)

Symbol Parameter Conditions Min Typ Max Unit

LSI oscillator stabilization

tSTAB(LSI)(2) 5% of final frequency - 125 180 μs
time
LSI oscillator power
IDD(LSI)(2) - - 110 180 nA
consumption
1. Evaluated by characterization - Not tested in production.
2. Guaranteed by design - Not tested in production.

5.3.9 PLL characteristics

The parameters given in Table 46 are derived from tests performed under temperature and
VDD supply voltage conditions summarized in Table 17: General operating conditions.

Table 46. PLL characteristics(1)

Symbol Parameter Conditions Min Typ Max Unit

PLL input clock(2) - 2.66 - 16 MHz

fPLL_IN
PLL input clock duty cycle - 45 - 55 %
Voltage scaling Range 1
2.0645 - 170
Boost mode
fPLL_P_OUT PLL multiplier output clock P
Voltage scaling Range 1 2.0645 - 150
Voltage scaling Range 2 2.0645 - 26
Voltage scaling Range 1
8 - 170
Boost mode
fPLL_Q_OUT PLL multiplier output clock Q
Voltage scaling Range 1 8 - 150
MHz
Voltage scaling Range 2 8 - 26
Voltage scaling Range 1
8 - 170
Boost mode
fPLL_R_OUT PLL multiplier output clock R
Voltage scaling Range 1 8 - 150
Voltage scaling Range 2 8 - 26
Voltage scaling Range 1 96 - 344
fVCO_OUT PLL VCO output
Voltage scaling Range 2 96 - 128
tLOCK PLL lock time - - 15 40 μs
RMS cycle-to-cycle jitter - 28.6 -
Jitter System clock 150 MHz ±ps
RMS period jitter - 21.4 -
VCO freq = 96 MHz - 200 260
PLL power consumption on
IDD(PLL) VCO freq = 192 MHz - 300 380 μA
VDD(1)
VCO freq = 344 MHz - 520 650
1. Guaranteed by design - Not tested in production.
2. Take care of using the appropriate division factor M to obtain the specified PLL input clock
values.

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5.3.10 Flash memory characteristics

Table 47. Flash memory characteristics(1)

Symbol Parameter Conditions Typ Max Unit

tprog 64-bit programming time - 81.7 83.35 µs

One row (32 double Normal programming 2.61 2.7

tprog_row
word) programming time Fast programming 1.91 1.95

One page (2 Kbytes) Normal programming 20.91 21.34

tprog_page ms
programming time Fast programming 15.29 15.6
Page (2 Kbytes) erase
tERASE - 22.02 24.47
time

One bank (256 Kbyte) Normal programming 2.68 2.73

tprog_bank s
programming time Fast programming 1.96 2
Mass erase time
tME - 22.13 24.6 ms
(one or two banks)

Average consumption Write mode 3.5 -

from VDD Erase mode 3.5 -
IDD mA
Write mode 7 (for 6 µs) -
Maximum current (peak)
Erase mode 7 (for 67 µs) -
1. Guaranteed by design - Not tested in production.

Table 48. Flash memory endurance and data retention

Symbol Parameter Conditions Min(1) Unit

NEND Endurance TA = -40 to +105 °C 10 kcycles

1 kcycle(2) at TA = 85 °C 30
1 kcycle(2) at TA = 105 °C 15
(2)
1 kcycle at TA = 125 °C 7
tRET Data retention Years
10 kcycles(2) at TA = 55 °C 30
10 kcycles(2) at TA = 85 °C 15
10 kcycles(2) at TA = 105 °C 10
1. Evaluated by characterization - Not tested in production.
2. Cycling performed over the whole temperature range.

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5.3.11 EMC characteristics

Susceptibility tests are performed on a sample basis during device characterization.

Functional EMS (electromagnetic susceptibility)

While a simple application is executed on the device (toggling 2 LEDs through I/O ports).
the device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:
• Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
• FTB: A Burst of Fast Transient voltage (positive and negative) is applied to VDD and
VSS through a 100 pF capacitor, until a functional disturbance occurs. This test is
compliant with the IEC 61000-4-4 standard.
A device reset allows normal operations to be resumed.
The test results are given in Table 49. They are based on the EMS levels and classes
defined in application note AN1709.

Table 49. EMS characteristics

Level/
Symbol Parameter Conditions
Class

VDD = 3.3 V, TA = +25 °C,

Voltage limits to be applied on any I/O pin
VFESD fHCLK = 170 MHz, 3B
to induce a functional disturbance
conforming to IEC 61000-4-2
Fast transient voltage burst limits to be VDD = 3.3 V, TA = +25 °C,
VEFTB applied through 100 pF on VDD and VSS fHCLK = 170 MHz, 5A
pins to induce a functional disturbance conforming to IEC 61000-4-4

Designing hardened software to avoid noise problems

EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
Software recommendations
The software flowchart must include the management of runaway conditions such as:
• Corrupted program counter
• Unexpected reset
• Critical Data corruption (control registers...)
Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1
second.

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To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015).

Electromagnetic Interference (EMI)

The electromagnetic field emitted by the device are monitored while a simple application is
executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with
IEC 61967-2 standard which specifies the test board and the pin loading.

Table 50. EMI characteristics

Max vs. [fHSE/fHCLK]
Monitored
Symbol Parameter Conditions Unit
frequency band
8 MHz / 170 MHz

0.1 MHz to 30 MHz 4

30 MHz to 130 MHz 0
VDD = 3.6 V, TA = 25 °C, dBµV
SEMI Peak level LQFP128 package 130 MHz to 1 GHz 16
compliant with IEC 61967-2
1 GHz to 2 GHz 11
EMI Level 3.5 -

5.3.12 Electrical sensitivity characteristics

Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.

Electrostatic discharge (ESD)

Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the ANSI/JEDEC standard.

Table 51. ESD absolute maximum ratings

Maximum
Symbol Ratings Conditions Class Unit
value(1)

Electrostatic discharge TA = +25 °C, conforming to

VESD(HBM) 2 2000 V
voltage (human body model) ANSI/ESDA/JEDEC JS-001
LQFP100 and
TA = +25 °C, conforming to LQFP128 C1 250
Electrostatic discharge
VESD(CDM) ANSI/ESDA/JEDEC JS- V
voltage (charge device model) Other
002 C2a 500
packages
1. Evaluated by characterization - Not tested in production.

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Static latch-up
Two complementary static tests are required on three parts to assess the latch-up
performance:
• A supply over-voltage is applied to each power supply pin.
• A current injection is applied to each input, output and configurable I/O pin.
These tests are compliant with EIA/JESD 78E IC latch-up standard.

Table 52. Electrical sensitivities

Symbol Parameter Conditions Class

LU Static latch-up class TA = +125 °C conforming to JESD78E Class II level A

5.3.13 I/O current injection characteristics

As a general rule, current injection to the I/O pins, due to external voltage below VSS or
above VDD (for standard, 3.3 V-capable I/O pins) should be avoided during normal product
operation. However, in order to give an indication of the robustness of the microcontroller in
cases when abnormal injection accidentally happens, susceptibility tests are performed on a
sample basis during device characterization.

Functional susceptibility to I/O current injection

While a simple application is executed on the device, the device is stressed by injecting
current into the I/O pins programmed in floating input mode. While current is injected into
the I/O pin, one at a time, the device is checked for functional failures.
The failure is indicated by an out of range parameter: ADC error above a certain limit (higher
than 5 LSB TUE), out of conventional limits of induced leakage current on adjacent pins (out
of the -5 µA/+0 µA range) or other functional failure (for example reset occurrence or
oscillator frequency deviation).
The characterization results are given in Table 53.
Negative induced leakage current is caused by negative injection and positive induced
leakage current is caused by positive injection.

Table 53. I/O current injection susceptibility

Functional
susceptibility
Symbol Description Unit
Negative Positive
injection injection

All except TT_a, PF10, PB8-BOOT0, PC10 -5 NA

(1)
IINJ Injected current on pin PF10, PB8-BOOT0, PC10 -0 NA mA
TT_a pins -5 0
1. Evaluated by characterization - Not tested in production.

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5.3.14 I/O port characteristics

General input/output characteristics
Unless otherwise specified, the parameters given in Table 54 are derived from tests
performed under the conditions summarized in Table 17: General operating conditions. All
I/Os are designed as CMOS- and TTL-compliant.

Table 54. I/O static characteristics

Symbol Parameter Conditions Min Typ Max Unit

All except 0.3xVDD

1.62 V<VDD<3.6 V - -
I/O input FT_c 0.39xVDD-0.06(3)
VIL(1)(2) low level V
voltage 0.3xVDD
FT_c 1.62 V<VDD<3.6 V - -
0.25xVDD

All except 0.7xVDD - -

I/O input 1.62 V<VDD<3.6 V
VIH(1)(2) high level FT_c 0.49xVDD +0.26(3) - - V
voltage
FT_c 1.62 V<VDD<3.6 V 0.7xVDD - -
TT_xx,
Input
VHYS(3) FT_xxx, 1.62 V<VDD<3.6 V - 200 - mV
hysteresis
NRST
0 < VIN ≤ VDD - - ±100
FT_xx
except VDD ≤ VIN ≤ VDD+1 V - - 650(4)
FT_c
VDD+1 V < VIN ≤ 5.5 V - - 200(4)
0 ≤ VIN ≤ VDDMAX - - 2000
FT_c
VDD ≤ VIN <0.5 V - - 3000
Input 0 ≤ VIN ≤ VDD - - ±150
Ileak leakage nA
current(3) FT_u, PC3 VDD ≤ VIN ≤ VDD+ 1 V - - ±2500
VDD ≤ VIN ≤ 5.5 V - - ±250
0 ≤ VIN ≤ VDD - - ±4500
FT_d
VDD + 1V ≤ VIN ≤ 5.5 V - - ±9000
0 ≤ VIN ≤ VDD - - ±150
TT_xx
VDD ≤ VIN ≤ 3.6 V - - 2000
Weak pull-
up
RPU VIN = VSS 25 40 55
equivalent
resistor(5)
kΩ
Weak pull-
down
RPD VIN = VDD 25 40 55
equivalent
resistor(5)
I/O pin I/O pin
CIO - - 5 - pF
capacitance capacitance
1. Refer to Figure 25: I/O input characteristics

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2. Data based on characterization results, not tested in production

3. Guaranteed by design - Not tested in production.
4. This value represents the pad leakage of the I/O itself. The total product pad leakage is provided by this formula:
ITotal_Ileak_max = 10 μA + [number of I/Os where VIN is applied on the pad] ₓ Ilkg(Max).
5. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This
PMOS/NMOS contribution to the series resistance is minimal (~10% order).

Note: For more information about GPIO properties, refer to the application note AN4899 "STM32
GPIO configuration for hardware settings and low-power consumption" available from the
ST website www.st.com.
All I/Os are CMOS- and TTL-compliant (no software configuration required). Their
characteristics cover more than the strict CMOS-technology or TTL parameters. The
coverage of these requirements is shown in Figure 25 for standard I/Os, and 5 V tolerant
I/Os (except FT_c).

Figure 25. I/O input characteristics

TTL requirement Vih min = 2V

2
DIO
x
>1.6
0. 7xV D V DDIOx
in = 6 for
m +0.2
Vih xV DDIO
x
ent 0.49
quir
em 2 or
<1.6 >1.62
S re V DD IOx
r VDDIOx
MO .08< .06 fo
nC or 1 -0
ctio +0.05 f 9xVD DIOx
rodu IOx or 0.3
in p 0.6 1xV DD <1.62
ted min = VDDIOx
Tes 1.08<
n Vih -0.1 fo
r
ulatio VDDIOx
do n sim ax =0.43x TTL requirement Vil max = 0.8V
Base o n Vil m xVdd
imulati ax = 0.3
on s nt Vil m
Based requireme
n CMOS
in p roductio
Tested

MSv37613V1

Output driving current

The GPIOs (general purpose input/outputs) can sink or source up to ±8 mA, and sink or
source up to ± 20 mA (with a relaxed VOL/VOH).

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In the user application, the number of I/O pins which can drive current must be limited to
respect the absolute maximum rating specified in Section 5.2:
• The sum of the currents sourced by all the I/Os on VDD, plus the maximum
consumption of the MCU sourced on VDD, cannot exceed the absolute maximum rating
ΣIVDD (see Table 14: Voltage characteristics).
• The sum of the currents sunk by all the I/Os on VSS, plus the maximum consumption of
the MCU sunk on VSS, cannot exceed the absolute maximum rating ΣIVSS (see
Table 14: Voltage characteristics).

Output voltage levels

Unless otherwise specified, the parameters given in the table below are derived from tests
performed under the ambient temperature and supply voltage conditions summarized in
Table 17: General operating conditions. All I/Os are CMOS- and TTL-compliant (FT OR TT
unless otherwise specified).

Table 55. Output voltage characteristics(1)(2)

Symbol Parameter Conditions Min Max Unit

VOL(3) Output low level voltage for an I/O pin CMOS port - 0.4
|IIO| = 2 mA for FT_c
VOH(3) Output high level voltage for an I/O pin I/Os = 8 mA for other I/Os VDD VDD-0.4 -
≥ 2.7 V
VOL(3) Output low level voltage for an I/O pin TTL port - 0.4
|IIO| = 2 mA for FT_c
VOH(3) Output high level voltage for an I/O pin I/Os = 8 mA for other I/Os 2.4 -
VDD ≥ 2.7 V
VOL(3) Output low level voltage for an I/O pin All I/Os except FT_c - 1.3
|IIO| = 20 mA V
VOH(3) Output high level voltage for an I/O pin V ≥ 2.7 V VDD-1.3 -
DD

VOL(3) Output low level voltage for an I/O pin |IIO| = 1 mA for FT_c - 0.4
I/Os = 4 mA for other I/Os
VOH(3) Output high level voltage for an I/O pin V ≥ 1.62 V VDD-0.45 -
DD

|IIO| = 20 mA
Output low level voltage for an FT I/O - 0.4
VOLFM+ VDD ≥ 2.7 V
(3) pin in FM+ mode (FT I/O with “f”
option) |IIO| = 10 mA
- 0.4
VDD ≥ 1.62 V
1. The IIO current sourced or sunk by the device must always respect the absolute maximum rating specified in Table 14:
Voltage characteristics, and the sum of the currents sourced or sunk by all the I/Os (I/O ports and control pins) must always
respect the absolute maximum ratings ΣIIO.
2. TTL and CMOS outputs are compatible with JEDEC standards JESD36 and JESD52.
3. Guaranteed by design - Not tested in production.

Input/output AC characteristics
The definition and values of input/output AC characteristics are given in Figure 26 and
Table 56, respectively.
Unless otherwise specified, the parameters given are derived from tests performed under
the ambient temperature and supply voltage conditions summarized in Table 17: General
operating conditions.

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Table 56. I/O (except FT_c) AC characteristics(1) (2)

Speed Symbol Parameter Conditions Min Max Unit

C=50 pF, 2.7 V≤VDD≤3.6 V - 5

Maximum C=50 pF, 1.62 V≤VDD≤2.7 V - 1

Fmax MHz
frequency C=10 pF, 2.7 V≤VDD≤3.6 V - 10
C=10 pF, 1.62 V≤VDD≤2.7 V - 1.5
00
C=50 pF, 2.7 V≤VDD≤3.6 V - 25

Output rise and C=50 pF, 1.62 V≤VDD≤2.7 V - 52

Tr/Tf ns
fall time C=10 pF, 2.7 V≤VDD≤3.6 V - 17
C=10 pF, 1.62 V≤VDD≤2.7 V - 37
C=50 pF, 2.7 V≤VDD≤3.6 V - 25

Maximum C=50 pF, 1.62 V≤VDD≤2.7 V - 10

Fmax MHz
frequency C=10 pF, 2.7 V≤VDD≤3.6 V - 50
C=10 pF, 1.62 V≤VDD≤2.7 V - 15
01
C=50 pF, 2.7 V≤VDD≤3.6 V - 9

Output rise and C=50 pF, 1.62 V≤VDD≤2.7 V - 16

Tr/Tf ns
fall time C=10 pF, 2.7 V≤VDD≤3.6 V - 4.5
C=10 pF, 1.62 V≤VDD≤2.7 V - 9
C=50 pF, 2.7 V≤VDD≤3.6 V - 50

Maximum C=50 pF, 1.62 V≤VDD≤2.7 V - 25

Fmax MHz
frequency C=10 pF, 2.7 V≤VDD≤3.6 V - 100(3)
C=10 pF, 1.62 V≤VDD≤2.7 V - 37.5
10
C=50 pF, 2.7 V≤VDD≤3.6 V - 5.8

Output rise and C=50 pF, 1.62 V≤VDD≤2.7 V - 11

Tr/Tf ns
fall time C=10 pF, 2.7 V≤VDD≤3.6 V - 2.5
C=10 pF, 1.62 V≤VDD≤2.7 V - 5
C=30 pF, 2.7 V≤VDD≤3.6 V - 120(3)

Maximum C=30 pF, 1.62 V≤VDD≤2.7 V - 50

Fmax MHz
frequency C=10 pF, 2.7 V≤VDD≤3.6 V - 180(3)
C=10 pF, 1.62 V≤VDD≤2.7 V - 75
11
C=30 pF, 2.7 V≤VDD≤3.6 V - 3.3

Output rise and C=30 pF, 1.62 V≤VDD≤2.7 V - 6

Tr/Tf ns
fall time(4) C=10 pF, 2.7 V≤VDD≤3.6 V - 1.7
C=10 pF, 1.62 V≤VDD≤2.7 V - 3.3

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Table 56. I/O (except FT_c) AC characteristics(1) (2) (continued)

Speed Symbol Parameter Conditions Min Max Unit

Maximum
Fmax(5) - 1 MHz
frequency
FM+ Output high to C=50 pF, 1.6 V≤VDD≤3.6 V
(4)
Tr/TF low level fall - 5 ns
time
1. The I/O speed is configured using the OSPEEDRy[1:0] bits. The Fm+ mode is configured in the
SYSCFG_CFGR1 register. Refer to the reference manual RM0440 "STM32G4 Series advanced Arm®-
based 32-bit MCUs" for a description of GPIO Port configuration register.
2. Guaranteed by design - Not tested in production.
3. This value represented the I/O capability but maximum system frequency is 170 MHz.
4. The fall time is defined between 70% and 30% of the output waveform accordingly to I2C specification.
5. The maximum frequency is defined with the following conditions:
- (Tr+ Tf) ≤ 2/3 T.
- 45%<Duty cycle<55%

Table 57. I/O FT_c AC characteristics(1) (2)

Speed Symbol Parameter Conditions Min Max Unit

Maximum C=50 pF, 2.7 V≤VDD≤3.6 V - 2

Fmax MHz
frequency C=50 pF, 1.6 V≤VDD≤2.7 V - 1
0
Output H/L to C=50 pF, 2.7 V≤VDD≤3.6 V - 170
Tr/Tf L/H level fall ns
time C=50 pF, 1.6 V≤VDD≤2.7 V - 330

Maximum C=50 pF, 2.7 V≤VDD≤3.6 V - 10

Fmax MHz
frequency C=50 pF, 1.6 V≤VDD≤2.7 V - 5
1
Output H/L to C=50 pF, 2.7 V≤VDD≤3.6 V - 35
Tr/Tf L/H level fall ns
time C=50 pF, 1.6 V≤VDD≤2.7 V - 65

1. The I/O speed is configured using the OSPEEDRy[1:0] bits. The Fm+ mode is configured in the
SYSCFG_CFGR1 register. Refer to the reference manual RM0440 "STM32G4 Series advanced Arm®-
based 32-bit MCUs" for a description of GPIO Port configuration register.
2. Guaranteed by design - Not tested in production.

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Figure 26. I/O AC characteristics definition(1)

90% 10%

50% 50%

10% 90%

t U ,2 RXW t I ,2 RXW

0D[LPXPIUHTXHQF\LVDFKLHYHGLI WW
r f ” 7DQGLIWKHGXW\F\FOHLV 
ZKHQORDGHGE\WKHVSHFLILHGFDSDFLWDQFH
MS32132V2

1. Refer to Table 56: I/O (except FT_c) AC characteristics.

5.3.15 NRST pin characteristics

The NRST pin input driver uses the CMOS technology. It is connected to a permanent pull-
up resistor, RPU.
Unless otherwise specified, the parameters given in the table below are derived from tests
performed under the ambient temperature and supply voltage conditions summarized in
Table 17: General operating conditions.

Table 58. NRST pin characteristics(1)

Symbol Parameter Conditions Min Typ Max Unit

NRST input low level

VIL(NRST) - - - 0.3ₓVDD
voltage
V
NRST input high level
VIH(NRST) - 0.7ₓVDD - -
voltage
NRST Schmitt trigger
Vhys(NRST) - - 200 - mV
voltage hysteresis
Weak pull-up equivalent
RPU VIN = VSS 25 40 55 kΩ
resistor(2)
NRST input filtered
VF(NRST) - - - 70 ns
pulse
NRST input not filtered 1.71 V ≤ VDD
VNF(NRST) 350 - - ns
pulse ≤ 3.6 V
1. Guaranteed by design - Not tested in production.
2. The pull-up is designed with a true resistance in series with a switchable PMOS. This PMOS contribution to
the series resistance is minimal (~10% order).

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Figure 27. Recommended NRST pin protection

External
reset circuit(1) VDD

RPU
NRST(2) Internal reset
Filter

0.1 μF

MS19878V3

1. The reset network protects the device against parasitic resets.

2. The user must ensure that the level on the NRST pin can go below the VIL(NRST) max level specified in
Table 58: NRST pin characteristics. Otherwise the reset is not taken into account by the device.
3. The external capacitor on NRST must be placed as close as possible to the device.

5.3.16 High-resolution timer (HRTIM)

The parameters given in Table 59 are derived from tests performed under ambient
temperature and supply voltage conditions summarized in Table 17.

Table 59. HRTIM characteristics(1)

Symbol Parameter Conditions Min. Typ. Max. Unit
Timer ambient
TA f =170 MHz -40 - 125 °C
temperature range HRTIM
fHRTIM HRTIM input clock - - 170 MHz
As per TA conditions
tHRTIM for DLL calibration 5.88 - - ns
high-resolution fHRTIM=170 MHz,
tRES(HRTIM) - 184 - ps
step size TA from -40 to 105°C
ResHRTIM Timer resolution - - - 16 bit
Dead time - 0.125 - 16 tHRTIM
tDTG generator clock
period fHRTIM=170 MHz 0.735 - 94.1 ns

|tDTR| / |tDTF| Dead time range - - - 511 tDTG

max (absolute value) fHRTIM=170 MHz - - 48.09 µs
Chopper stage - 1/256 - 1/16 fHRTIM
fCHPFRQ
clock frequency fHRTIM=170 MHz 0.664 - 10.625 MHz
Chopper first - 16 - 256 tHRTIM
t1STPW
pulse length fHRTIM=170 MHz 0.094 - 1.506 µs
1. Data based on characterization results, not tested in production.

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Table 60. HRTIM output response to fault protection(1)

Symbol Parameter Conditions Min. Typ. Max.(2) Unit

Propagation delay from

Digital fault response
tLAT(DF) HRTIM1_FLTx digital input to - 9 20
latency
HRTIM_CHxy output pin
Minimum Fault pulse
tW(FLT) - 7 - - ns
width
Propagation delay from
Analog fault response
tLAT(AF) comparator COMPx_INP input - 16 31
latency
pin to HRTIM_CHxy output pin
1. Refer to Fault paragraph in HRTIM section of RM0440.
2. Data based on characterization results, not tested in production.

Table 61. HRTIM output response to external events 1 to 5

(Low-Latency mode(1))
Symbol Parameter Conditions Min Typ(2) Max(2) Unit

Propagation delay from

Digital external event HRTIM1_EEVx digital input to
tLAT(DEEV) - 12 23
response latency HRTIM_CHxy output pin (30pF
load)
Minimum external
tW(EEV) - 7 - - ns
event pulse width
Propagation delay from
Analog external event comparator COMPx_INP input
tLAT(AEEV) - 19 31
response latency pin to HRTIM_CHxy output pin
(30pF load)
1. EExFAST bit in HRTIM_EECR1 register is set (Low Latency mode). This functionality is available on
external events channels 1 to 5. Refer to Latency to external events paragraph in HRTIM section of
RM0440.
2. Data based on characterization results, not tested in production.

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Table 62. HRTIM output response to external events 1 to 10 (Synchronous mode (1))
Symbol Parameter Conditions Min. Typ. Max.(2) Unit

Propagation delay from HRTIM1_EEVx

Digital external event
tLAT(DEEV) digital input to HRTIM_CHxy output pin - 56 66 ns
response latency
(30pF load) (3)
Propagation delay from COMPx_INP
Analog external event
tLAT(AEEV) input pin to HRTIM_CHxy output pin - 62 76 ns
response latency
(30pF load) (3)
Minimum external event
tW(EEV) - 7 - - ns
pulse width
Jitter of the delay from HRTIM1_EEVx
External event response
TJIT(EEV) digital input or COMPx_INP to - - 1 tHRTIM (4)
jitter
HRTIM_CHxy output pin
1. EExFAST bit in HRTIM_EECR1 or HRTIM_EECR2 register is cleared (synchronous mode). External event filtering is
disabled, i.e. EExF[3:0]=0000 in HRTIM_EECR2 register. Refer to Latency to external events paragraph in HRTIM section
of RM0440.
2. Data based on characterization results, not tested in production.
3. This parameter is given for fHRTIM = 170 MHz.
4. THRTIM = 1 / fHRTIM with fHRTIM= 170 MHz.

Table 63. HRTIM synchronization input / output(1)

Symbol Parameter Conditions Min. Typ. Max. Unit

Minimum pulse width on

tW(SYNCIN) SYNCIN inputs, including - 2 - - tHRTIM
HRTIM_SCIN
Response time to external
tRES(ESR) - - - 3 tHRTIM
synchronization request

Pulse width on - - 16 - tHRTIM

tW(SYNCOUT)
HRTIM_SCOUT output fHRTIM=170 MHz - 94.1 - ns
1. Guaranteed by design, not tested in production.

5.3.17 Extended interrupt and event controller input (EXTI) characteristics

The pulse on the interrupt input must have a minimal length in order to guarantee that it is
detected by the event controller.

Table 64. EXTI input characteristics(1)

Symbol Parameter Conditions Min Typ Max Unit

Pulse length to event

PLEC - 20 - - ns
controller
1. Guaranteed by design - Not tested in production.

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5.3.18 Analog switches booster

Table 65. Analog switches booster characteristics(1)

Symbol Parameter Min Typ Max Unit

VDD Supply voltage 1.62 - 3.6 V

tSU(BOOST) Booster startup time - - 240 µs
Booster consumption for
- - 250
1.62 V ≤ VDD ≤ 2.0 V
Booster consumption for
IDD(BOOST) - - 500 µA
2.0 V ≤ VDD ≤ 2.7 V
Booster consumption for
- - 900
2.7 V ≤ VDD ≤ 3.6 V
1. Guaranteed by design - Not tested in production.

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5.3.19 Analog-to-digital converter characteristics

Unless otherwise specified, the parameters given in Table 66 are preliminary values derived
from tests performed under ambient temperature, fPCLK frequency and VDDA supply voltage
conditions summarized in Table 17: General operating conditions.
Note: It is recommended to perform a calibration after each power-up.

Table 66. ADC characteristics(1) (2)

Symbol Parameter Conditions Min Typ Max Unit

Analog supply
VDDA - 1.62 - 3.6 V
voltage
Positive VDDA ≥ 2 V 2 - VDDA V
VREF+ reference
voltage VDDA < 2 V VDDA V

Negative
VREF- reference - VSSA V
voltage
Input common (VREF++VREF- (VREF+ + (VREF+ + VREF-
VCMIN Differential V
mode )/2 - 0.18 VREF-)/2 )/2 + 0.18
Range 1, single
0.14 - 60
ADC operation
Range 2 - - 26
Range 1, all ADCs
operation, single
0.14 - 52
ended mode
VDDA ≥ 2.7 V
ADC clock
fADC MHz
frequency Range 1, all ADCs
operation, single
0.14 - 42
ended mode
VDDA ≥ 1.62 V
Range 1, all ADCs
operation,
0.14 - 56
differential mode
VDDA ≥ 1.62 V
For given
fADC / (sampling time
Sampling rate, resolution and
fs 0.001 [cycles] + resolution [bits] + Msps
continuous mode sampling time
0.5)
cycles (ts)
Considering trigger
conversion latency
- -
time (tLATR or
External trigger tLATRINJ)
TTRIG 1ms -
period
Resolution =
tconv + [tLATR
12 bits, -
or tLATRINJ]
fADC=60 MHz
Conversion
VAIN (3) - 0 - VREF+ V
voltage range

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Table 66. ADC characteristics(1) (2) (continued)

Symbol Parameter Conditions Min Typ Max Unit

External input
RAIN(4) - - - 50 kΩ
impedance
Internal sample
CADC and hold - - 5 - pF
capacitor
conversion
tSTAB Power-up time - 1
cycle
fADC = 60 MHz 1.93 µs
tCAL Calibration time
- 116 1/fADC
Trigger CKMODE = 00 1.5 2 2.5
conversion
CKMODE = 01 - - 2.0
latency Regular
tLATR 1/fADC
and injected CKMODE = 10 - - 2.25
channels without
conversion abort CKMODE = 11 - - 2.125

Trigger CKMODE = 00 2.5 3 3.5

conversion
CKMODE = 01 - - 3.0
latency Injected
tLATRINJ channels CKMODE = 10 - - 3.25 1/fADC
aborting a
regular CKMODE = 11 - - 3.125
conversion
fADC = 60 MHz 0.0416 - 10.675 µs
ts Sampling time
- 2.5 - 640.5 1/fADC
tADCVREG_STUP ADC voltage
regulator start-up - - - 20 µs
time

Total conversion fADC = 60 MHz

time Resolution = 0.25 - 10.883 µs
tCONV 12 bits
(including
sampling time) - ts[cycles] + resolution [bits] +0.5 = 15 to 653 1/fADC
ADC fs = 4 Msps - 590 730
consumption
IDDA(ADC) fs = 1 Msps - 160 220 µA
from the VDDA
supply fs = 10 ksps - 16 50
ADC fs = 4 Msps - 110 140
consumption
fs = 1 Msps - 30 40
IDDV_S(ADC) from the VREF+ µA
single ended
fs = 10 ksps - 0.6 2
mode
ADC fs = 4 Msps - 220 270
consumption
IDDV_D(ADC) fs = 1 Msps - 60 70 µA
from the VREF+
differential mode fs = 10 ksps - 1.3 3
1. Guaranteed by design - Not tested in production.

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2. The I/O analog switch voltage booster is enabled when VDDA < 2.4 V (BOOSTEN = 1 in the SYSCFG_CFGR1 when
VDDA < 2.4V). It is disabled when VDDA ≥ 2.4 V.
3. VREF+ can be internally connected to VDDA, depending on the package. Refer to Section 4: Pinouts and pin description for
further details.
4. The maximum value of RAIN can be found in Table 67: Maximum ADC RAIN.

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The maximum value of RAIN can be found in Table 67: Maximum ADC RAIN.

Table 67. Maximum ADC RAIN(1)(2)

RAIN max (Ω)
Sampling cycle Sampling time
Resolution
@60 MHz [ns]
Fast channels(3) Slow channels(4)

2.5 41.67 100 N/A

6.5 108.33 330 100
12.5 208.33 680 470
24.5 408.33 1500 1200
12 bits
47.5 791.67 2200 1800
92.5 1541.67 4700 3900
247.5 4125 12000 10000
640.5 10675 39000 33000
2.5 41.67 120 N/A
6.5 108.33 390 180
12.5 208.33 820 560
24.5 408.33 1500 1200
10 bits
47.5 791.67 2200 1800
92.5 1541.67 5600 4700
247.5 4125 12000 10000
640.5 10675 47000 39000
2.5 41.67 180 N/A
6.5 108.33 470 270
12.5 208.33 1000 680
24.5 408.33 1800 1500
8 bits
47.5 791.67 2700 2200
92.5 1541.67 6800 5600
247.5 4125 15000 12000
640.5 10675 50000 50000
2.5 41.67 220 N/A
6.5 108.33 560 330
12.5 208.33 1200 1000
24.5 408.33 2700 2200
6 bits
47.5 791.67 3900 3300
92.5 1541.67 8200 6800
247.5 4125 18000 15000
640.5 10675 50000 50000

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1. Guaranteed by design - Not tested in production.

2. The I/O analog switch voltage booster is enabled when VDDA < 2.4 V (BOOSTEN = 1 in the
SYSCFG_CFGR1 when VDDA < 2.4V). It is disabled when VDDA ≥ 2.4 V.
3. Fast channels are: ADCx_IN1 to ADCx_IN5.
4. Slow channels are: all ADC inputs except the fast channels.

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Table 68. ADC accuracy - limited test conditions 1(1)(2)(3)

Symbol Parameter Conditions(4) Min Typ Max Unit

Single Fast channel (max speed) - 5.9 6.9

Total ended Slow channel (max speed) - 5.5 6.9
ET unadjusted
error Fast channel (max speed) - 4.6 5.6
Differential
Slow channel (max speed) - 4 5.6

Single Fast channel (max speed) - 2.5 4

ended Slow channel (max speed) - 1.9 4
EO Offset error
Fast channel (max speed) - 1.8 2.8
Differential
Slow channel (max speed) - 1.1 2.8

Single Fast channel (max speed) - 4.6 6.6

ended Slow channel (max speed) - 4.5 6.6
EG Gain error LSB
Fast channel (max speed) - 3.6 4.6
Differential
Slow channel (max speed) - 3.3 4.6

Single Fast channel (max speed) - 1.1 1.9

Differential ended Slow channel (max speed) - 1.3 1.9
ED linearity Single ADC operation ADC clock
error frequency ≤ 60 MHz, Fast channel (max speed) - 1.3 1.6
Differential
VDDA = VREF+ = 3 V, TA = Slow channel (max speed) - 1.4 1.6
25 °C
Continuous mode, sampling Single Fast channel (max speed) - 2.3 3.4
Integral rate: ended Slow channel (max speed) - 2.4 3.4
EL linearity Fast channels@4Msps
error Slow channels@2Msps Fast channel (max speed) - 2.1 3.2
Differential
Slow channel (max speed) - 2.2 3.2

Single Fast channel (max speed) 10.4 10.6 -

Effective ended Slow channel (max speed) 10.4 10.6 -
ENOB number of bits
bits Fast channel (max speed) 10.8 10.9 -
Differential
Slow channel (max speed) 10.8 10.9 -

Single Fast channel (max speed) 64.4 65.6 -

Signal-to-
ended Slow channel (max speed) 64.4 65.6 -
noise and
SINAD
distortion Fast channel (max speed) 66.8 67.5 -
ratio Differential
Slow channel (max speed) 66.8 67.5 -
Fast channel (max speed) 65 66.9 - dB
Single
ended Slow channel (max speed) 65 66.9 -
Signal-to-
SNR Fast channel (max speed) 67 69 -
noise ratio
Differential 69
Slow channel (max speed) 67 -

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Table 68. ADC accuracy - limited test conditions 1(1)(2)(3) (continued)

Symbol Parameter Conditions(4) Min Typ Max Unit

Single ADC operation ADC clock Single Fast channel (max speed) - -73 -72
frequency ≤ 60 MHz, ended Slow channel (max speed) - -73 -72
VDDA = VREF+ = 3 V, TA =
Total
25 °C Fast channel (max speed) - -73 -72
THD harmonic dB
Continuous mode, sampling
distortion
rate: Differential
Fast channels@4Msps Slow channel (max speed) - -73 -72
Slow channels@2Msps
1. Evaluated by characterization – Not tested in production.
2. ADC DC accuracy values are measured after internal calibration.
3. ADC accuracy vs. negative Injection Current: Injecting negative current on any analog input pins should be avoided as this
significantly reduces the accuracy of the conversion being performed on another analog input. It is recommended to add a
Schottky diode (pin to ground) to analog pins which may potentially inject negative current.
4. The I/O analog switch voltage booster is enabled when VDDA < 2.4 V (BOOSTEN = 1 in the SYSCFG_CFGR1 when
VDDA < 2.4 V). It is disabled when VDDA ≥ 2.4 V. No oversampling.

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Table 69. ADC accuracy - limited test conditions 2(1)(2)(3)

Sym-
Parameter Conditions(4) Min Typ Max Unit
bol

Single Fast channel (max speed) - 5.9 8.4

Total ended Slow channel (max speed) - 5.5 8
ET unadjusted
error Fast channel (max speed) - 4.6 6.6
Differential
Slow channel (max speed) - 4 6

Single Fast channel (max speed) - 2.5 6

ended Slow channel (max speed) - 1.9 6.9
EO Offset error
Fast channel (max speed) - 1.8 3.3
Differential
Slow channel (max speed) - 1.1 3.3

Single Fast channel (max speed) - 4.6 8.1

ended Slow channel (max speed) - 4.5 8.1
EG Gain error LSB
Fast channel (max speed) - 3.6 4.6
Differential
Slow channel (max speed) - 3.3 4.6

Single Fast channel (max speed) - 1.1 1.8

Differential ended Slow channel (max speed) - 1.3 1.8
ED linearity Single ADC operation
error ADC clock frequency Fast channel (max speed) - 1.3 1.6
Differential
≤ 60 MHz, 2 V ≤ VDDA Slow channel (max speed) - 1.4 1.6
Continuous mode, sampling
rate: Single Fast channel (max speed) - 2.3 4.4
Integral Fast channels@4Msps ended Slow channel (max speed) - 2.4 4.4
EL linearity Slow channels@2Msps
error Fast channel (max speed) - 2.1 4.1
Differential
Slow channel (max speed) - 2.2 3.7

Single Fast channel (max speed) 10 10.6 -

Effective ended Slow channel (max speed) 10 10.6 -
ENOB number of bits
bits Fast channel (max speed) 10.7 10.9 -
Differential
Slow channel (max speed) 10.7 10.9 -

Single Fast channel (max speed) 62 65.6 -

Signal-to-
ended Slow channel (max speed) 62 65.6 -
noise and
SINAD
distortion Fast channel (max speed) 65 67.5 -
ratio Differential
Slow channel (max speed) 65 67.5 -
dB
Single Fast channel (max speed) 64 66.9 -
ended Slow channel (max speed) 64 66.9 -
Signal-to-
SNR
noise ratio Fast channel (max speed) 66.5 69 -
Differential
Slow channel (max speed) 66.5 69 -

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Table 69. ADC accuracy - limited test conditions 2(1)(2)(3) (continued)

Sym-
Parameter Conditions(4) Min Typ Max Unit
bol

Single ADC operation Single Fast channel (max speed) - -73 -65
ADC clock frequency ended Slow channel (max speed) - -73 -67
Total ≤ 60 MHz, 2 V ≤ VDDA
THD harmonic Continuous mode, sampling Fast channel (max speed) - -73 -70 dB
distortion rate:
Differential
Fast channels@4Msps Slow channel (max speed) - -73 -71
Slow channels@2Msps
1. Evaluated by characterization – Not tested in production.
2. ADC DC accuracy values are measured after internal calibration.
3. ADC accuracy vs. negative Injection Current: Injecting negative current on any analog input pins should be avoided as this
significantly reduces the accuracy of the conversion being performed on another analog input. It is recommended to add a
Schottky diode (pin to ground) to analog pins which may potentially inject negative current.
4. The I/O analog switch voltage booster is enabled when VDDA < 2.4 V (BOOSTEN = 1 in the SYSCFG_CFGR1 when
VDDA < 2.4 V). It is disabled when VDDA ≥ 2.4 V. No oversampling.

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Table 70. ADC accuracy - limited test conditions 3(1)(2)(3)

Sym-
Parameter Conditions(4) Min Typ Max Unit
bol

Single Fast channel (max speed) - 5.9 7.9

Total ended Slow channel (max speed) - 5.5 7.5
ET unadjusted
error Fast channel (max speed) - 4.6 7.6
Differential
Slow channel (max speed) - 4 5.5

Single Fast channel (max speed) - 2.5 5.5

ended Slow channel (max speed) - 1.9 5.5
EO Offset error
Fast channel (max speed) - 1.8 3.5
Differential
Slow channel (max speed) - 1.1 3

Single Fast channel (max speed) - 4.6 7.1

ended Slow channel (max speed) - 4.5 7
EG Gain error LSB
Fast channel (max speed) - 3.6 4.1
Differential
Slow channel (max speed) - 3.3 4.8

Single Fast channel (max speed) - 1.1 1.9

Differential Single ADC operation ended Slow channel (max speed) - 1.3 1.9
ED linearity ADC clock frequency ≤
error 60 MHz, Fast channel (max speed) - 1.3 1.6
Differential
1.62 V ≤ VDDA = VREF+ Slow channel (max speed) - 1.4 1.6
≤ 3.6 V,
Continuous mode, Single Fast channel (max speed) - 2.3 4.4
Integral sampling rate: ended Slow channel (max speed) - 2.4 4.4
EL linearity Fast channels@4Msps
error Slow channels@2Msps Fast channel (max speed) - 2.1 3.7
Differential
Slow channel (max speed) - 2.2 3.7

Single Fast channel (max speed) 10 10.6 -

Effective ended Slow channel (max speed) 10 10.6 -
ENOB number of bits
bits Fast channel (max speed) 10.6 10.9 -
Differential
Slow channel (max speed) 10.6 10.9 -

Single Fast channel (max speed) 62 65.6 -

Signal-to-
ended Slow channel (max speed) 62 65.6 -
noise and
SINAD
distortion Fast channel (max speed) 65 67.5 -
ratio Differential
Slow channel (max speed) 65 67.5 -
dB
Single Fast channel (max speed) 63 66.9 -
ended Slow channel (max speed) 63 66.9 -
Signal-to-
SNR
noise ratio Fast channel (max speed) 66 69 -
Differential
Slow channel (max speed) 66 69 -

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Table 70. ADC accuracy - limited test conditions 3(1)(2)(3) (continued)

Sym-
Parameter Conditions(4) Min Typ Max Unit
bol

Single ADC operation Single Fast channel (max speed) - -73 -67
ADC clock frequency ≤ ended Slow channel (max speed) - -73 -67
60 MHz,
Total 1.62 V ≤ VDDA = VREF+ Fast channel (max speed) - -73 -71
THD harmonic ≤ 3.6 V, dB
distortion Continuous mode,
Differential
sampling rate: Slow channel (max speed) - -73 -71
Fast channels@4Msps
Slow channels@2Msps
1. Evaluated by characterization – Not tested in production.
2. ADC DC accuracy values are measured after internal calibration.
3. ADC accuracy vs. negative Injection Current: Injecting negative current on any analog input pins should be avoided
as this significantly reduces the accuracy of the conversion being performed on another analog input. It is
recommended to add a Schottky diode (pin to ground) to analog pins which may potentially inject negative current.
4. The I/O analog switch voltage booster is enabled when VDDA < 2.4 V (BOOSTEN = 1 in the SYSCFG_CFGR1 when
VDDA < 2.4 V). It is disabled when VDDA ≥ 2.4 V. No oversampling.

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Table 71. ADC accuracy (Multiple ADCs operation) - limited test conditions 1(1)(2)(3)
Symbol Parameter Conditions(4) Min Typ Max Unit

Total unadjusted Single ended - 4.5 -

ET
error Differential - 4.1 -
Single ended - 1.3 -
EO Offset error
Differential - 0.4 -
Single ended - 3.9 -
EG Gain error LSB
Multiple ADC operation Differential - 3.4 -
ADC clock frequency: Single ended - 1.5 -
Differential
ED single ended ≤ 52 MHz,
linearity error Differential - 1.2 -
differential ≤ 56 MHz,
Integral linearity VDDA = VREF= 3.3 V, Single ended - 1.7 -
EL 25°C,
error Differential - 2.1 -
Continuous mode,
Effective sampling time: Single ended - 10.7 -
ENOB bits
number of bits Fast channels: 2.5 cycles Differential - 10.9 -
Slow channels: 6.5 cycles
Signal-to-noise LQFP100 package Single ended - 66.3 -
SINAD and distortion
ratio Differential - 67.2 -
dB
Signal-to-noise Single ended - 67.3 -
SNR
ratio Differential - 68.6 -

Total harmonic Single ended - -73.5 -

THD dB
distortion Differential - -73 -

1. Data based on characterization result, not tested in production.

2. ADC DC accuracy values are measured after internal calibration.
3. ADC accuracy vs. negative Injection Current: Injecting negative current on any analog input pins should be avoided
as this significantly reduces the accuracy of the conversion being performed on another analog input. It is
recommended to add a Schottky diode (pin to ground) to analog pins which may potentially inject negative current.
4. The I/O analog switch voltage booster is enabled when VDDA < 2.4 V (BOOSTEN = 1 in the SYSCFG_CFGR1 when
VDDA < 2.4 V). It is disabled when VDDA ≥ 2.4 V. No oversampling.

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Table 72. ADC accuracy (Multiple ADCs operation) - limited test conditions 2(1)(2)(3)
Symbol Parameter Conditions(4) Min Typ Max Unit

Total unadjusted Single ended - 7.1 -

ET
error Differential - 4.6 -
Single ended - 4.2 -
EO Offset error
Differential - 2.8 -
Single ended - 6.8 -
EG Gain error LSB
Multiple ADC operation Differential - 4.3 -
ADC clock frequency: Single ended - 1.5 -
Differential
ED single ended ≤ 52 MHz,
linearity error Differential - 1.7 -
differential ≤ 56 MHz,
Integral linearity VDDA ≥ 2.7 V, VREF≥ 1.62 V, Single ended - 3.1 -
EL -40 to 125°C,
error Differential - 2.4 -
Continuous mode,
Effective sampling time: Single ended - 10.2 -
ENOB bits
number of bits Fast channels: 2.5 cycles Differential - 10.6 -
Slow channels: 6.5 cycles
Signal-to-noise LQFP100 package Single ended - 62.9 -
SINAD and distortion
ratio Differential - 65.3 -
dB
Signal-to-noise Single ended - 63.6 -
SNR
ratio Differential - 66.3 -

Total harmonic Single ended - -70.9 -

THD dB
distortion Differential - -71.8 -

1. Data based on characterization result, not tested in production.

2. ADC DC accuracy values are measured after internal calibration.
3. ADC accuracy vs. negative Injection Current: Injecting negative current on any analog input pins should be avoided
as this significantly reduces the accuracy of the conversion being performed on another analog input. It is
recommended to add a Schottky diode (pin to ground) to analog pins which may potentially inject negative current.
4. The I/O analog switch voltage booster is enabled when VDDA < 2.4 V (BOOSTEN = 1 in the SYSCFG_CFGR1 when
VDDA < 2.4 V). It is disabled when VDDA ≥ 2.4 V. No oversampling.

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Table 73. ADC accuracy (Multiple ADCs operation) - limited test conditions 3(1)(2)(3)
Symbol Parameter Conditions(4) Min Typ Max Unit

Total unadjusted Single ended - 7.4 -

ET
error Differential - 4.6 -
Single ended - 4 -
EO Offset error
Differential - 2.8 -
Single ended - 7.2 -
EG Gain error LSB
Multiple ADC operation Differential - 4.3 -
ADC clock frequency: Single ended - 1.8 -
Differential
ED single ended ≤ 42 MHz,
linearity error Differential - 1.7 -
differential ≤ 56 MHz,
Integral linearity VDDA= VREF≥ 1.62 V, Single ended - 3.1 -
EL -40 to 125°C,
error Differential - 2.4 -
Continuous mode,
Effective sampling time: Single ended - 10.1 -
ENOB bits
number of bits Fast channels: 2.5 cycles Differential - 10.6 -
Slow channels: 6.5 cycles
Signal-to-noise LQFP100 package Single ended - 62.6 -
SINAD and distortion
ratio Differential - 65.3 -
dB
Signal-to-noise Single ended - 63.2 -
SNR
ratio Differential - 66.3 -

Total harmonic Single ended - -70.6 -

THD dB
distortion Differential - -71.8 -

1. Data based on characterization result, not tested in production.

2. ADC DC accuracy values are measured after internal calibration.
3. ADC accuracy vs. negative Injection Current: Injecting negative current on any analog input pins should be avoided
as this significantly reduces the accuracy of the conversion being performed on another analog input. It is
recommended to add a Schottky diode (pin to ground) to analog pins which may potentially inject negative current.
4. The I/O analog switch voltage booster is enabled when VDDA < 2.4 V (BOOSTEN = 1 in the SYSCFG_CFGR1 when
VDDA < 2.4 V). It is disabled when VDDA ≥ 2.4 V. No oversampling.

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Figure 28. ADC accuracy characteristics

VREF+ VDDA
[1LSB = (or )]
Output code 2n 2n
EG
(1) Example of an actual transfer curve
2n-1 (2) Ideal transfer curve
2n-2 (3) End-point correlation line
2n-3 (2)
n = ADC resolution
ET = total unadjusted error: maximum deviation
(3) between the actual and ideal transfer curves
ET
7 (1) EO = offset error: maximum deviation between the first
actual transition and the first ideal one
6
EL EG = gain error: deviation between the last ideal
5 EO
transition and the last actual one
4 ED = differential linearity error: maximum deviation
ED between actual steps and the ideal one
3
2 EL = integral linearity error: maximum deviation between
1 any actual transition and the end point correlation line
1 LSB ideal
0 VREF+ (VDDA)
(1/2n)*VREF+
(2/2n)*VREF+
(3/2n)*VREF+
(4/2n)*VREF+
(5/2n)*VREF+
(6/2n)*VREF+
(7/2n)*VREF+

(2n-3/2n)*VREF+
(2n-2/2n)*VREF+
(2n-1/2n)*VREF+
(2n/2n)*VREF+
VSSA

MSv19880V6

Figure 29. Typical connection diagram when using the ADC with FT/TT pins
featuring analog switch function

VDDA(4) VREF+(4)

I/O Sample-and-hold ADC converter

analog
RAIN(1) switch RADC
Converter

Cparasitic(2) Ilkg(3) CADC

VAIN Sampling
switch with
multiplexing

VSS VSS VSSA

MSv67871V3

1. Refer to Table 66: ADC characteristics for the values of RAIN and CADC.
2. Cparasitic represents the capacitance of the PCB (dependent on soldering and PCB layout quality) plus the
pad capacitance (refer to Table 54: I/O static characteristics for the value of the pad capacitance). A high
Cparasitic value downgrades conversion accuracy. To remedy this, fADC should be reduced.
3. Refer to Table 54: I/O static characteristics for the values of Ilkg.
4. Refer to Figure 16: Power supply scheme.

General PCB design guidelines

Power supply decoupling must be performed as shown in Figure 16: Power supply scheme.
The decoupling capacitor on VDDA must be ceramic (good quality) and it must be placed as
close as possible to the chip.

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5.3.20 Digital-to-Analog converter characteristics

Table 74. DAC 1MSPS characteristics(1)

Symbol Parameter Conditions Min Typ Max Unit

DAC output buffer OFF, DAC_OUT

pin not connected (internal 1.71 -
Analog supply voltage for
VDDA connection only) 3.6
DAC ON
Other modes 1.80 -

DAC output buffer OFF, DAC_OUT V

pin not connected (internal 1.71 -
VREF+ Positive reference voltage connection only) VDDA

Other modes 1.80 -

VREF- Negative reference voltage - VSSA

DAC output connected to VSSA 5 - -

RL Resistive load kΩ
buffer ON connected to VDDA 25 - -
RO Output Impedance DAC output buffer OFF 9.6 11.7 13.8 kΩ
Output impedance sample VDD = 2.7 V - - 2
RBON and hold mode, output kΩ
buffer ON VDD = 2.0 V - - 3.5

Output impedance sample VDD = 2.7 V - - 16.5

RBOFF and hold mode, output kΩ
buffer OFF VDD = 2.0 V - - 18.0

CL DAC output buffer ON - - 50 pF

Capacitive load
CSH Sample and hold mode - 0.1 1 µF
VREF+
Voltage on DAC_OUT DAC output buffer ON 0.2 -
VDAC_OUT – 0.2 V
output
DAC output buffer OFF 0 - VREF+
±0.5 LSB - 1.7 3
Normal mode
Settling time (full scale: for DAC output ±1 LSB - 1.6 2.9
a 12-bit code transition buffer ON ±2 LSB - 1.55 2.85
between the lowest and the CL ≤ 50 pF,
tSETTLING ±4 LSB - 1.48 2.8 µs
highest input codes when RL ≥ 5 kΩ
DAC_OUT reaches final ±8 LSB - 1.4 2.75
value)
Normal mode DAC output buffer
- 2 2.5
OFF, ±1LSB, CL = 10 pF

Wakeup time from off state Normal mode DAC output buffer ON
- 4.2 7.5
(setting the ENx bit in the CL ≤ 50 pF, RL ≥ 5 kΩ
tWAKEUP(2) µs
DAC Control register) until Normal mode DAC output buffer
final value ±1 LSB - 2 5
OFF, CL ≤ 10 pF
Normal mode DAC output buffer ON
PSRR VDDA supply rejection ratio - -80 -28 dB
CL ≤ 50 pF, RL = 5 kΩ, DC

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Table 74. DAC 1MSPS characteristics(1) (continued)

Symbol Parameter Conditions Min Typ Max Unit

Minimal time between two

consecutive writes into the
DAC_DORx register to
guarantee a correct
DAC_OUT for a small
TW_to_W variation of the input code - - µs
(1 LSB)
DAC_MCR:MODEx[2:0] =
000 or 001 CL ≤ 50 pF, RL ≥ 5 kΩ 1
DAC_MCR:MODEx[2:0] =
010 or 011 CL ≤ 10 pF 1.4
DAC output buffer
- 0.7 3.5
DAC_OUT ON, CSH = 100 nF
Sampling time in sample ms
pin connected DAC output buffer
and hold mode (code - 10.5 18
OFF, CSH = 100 nF
transition between the
tSAMP lowest input code and the DAC_OUT
highest input code when pin not
DACOUT reaches final connected DAC output buffer
- 2 3.5 µs
value ±1LSB) (internal OFF
connection
only)
Sample and hold mode,
Ileak Output leakage current - - -(3) nA
DAC_OUT pin connected
Internal sample and hold
CIint - 5.2 7 8.8 pF
capacitor
tTRIM Middle code offset trim time DAC output buffer ON 50 - - µs

Middle code offset for 1 trim VREF+ = 3.6 V - 1500 -

Voffset µV
code step VREF+ = 1.8 V - 750 -
No load, middle
- 315 500
DAC output code (0x800)
buffer ON No load, worst code
- 450 670
(0xF1C)
DAC consumption from DAC output No load, middle
IDDA(DAC) - - 0.2 µA
VDDA buffer OFF code (0x800)
315 ₓ 670 ₓ
Sample and hold mode, CSH = Ton/(Ton Ton/(Ton
-
100 nF +Toff) +Toff)
(4) (4)

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Table 74. DAC 1MSPS characteristics(1) (continued)

Symbol Parameter Conditions Min Typ Max Unit

No load, middle
- 185 240
DAC output code (0x800)
buffer ON No load, worst code
- 340 400
(0xF1C)
DAC output No load, middle
- 155 205
buffer OFF code (0x800)
DAC consumption from
IDDV(DAC) 185 ₓ 400 ₓ µA
VREF+
Sample and hold mode, buffer ON, Ton/(Ton Ton/(Ton
-
CSH = 100 nF, worst case +Toff) +Toff)
(4) (4)

155 ₓ 205 ₓ
Sample and hold mode, buffer OFF, Ton/(Ton Ton/(Ton
-
CSH = 100 nF, worst case +Toff) +Toff)
(4) (4)

1. Guaranteed by design - Not tested in production.

2. In buffered mode, the output can overshoot above the final value for low input code (starting from min value).
3. Refer to Table 54: I/O static characteristics.
4. Ton is the Refresh phase duration. Toff is the Hold phase duration. Refer to the reference manual RM0440 "STM32G4
Series advanced Arm®-based 32-bit MCUs" for more details.

Figure 30. 12-bit buffered / non-buffered DAC

Buffered/non-buffered DAC

(1)
Buffer

RLOAD
12-bit
DACx_OUT
digital to
analog
converter
CLOAD

ai17157d

1. The DAC integrates an output buffer to reduce the output impedance and to drive external loads directly
without the use of an external operational amplifier. The buffer can be bypassed by configuring the BOFFx
bit in the DAC_CR register.

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Table 75. DAC 1MSPS accuracy(1)

.

Symbol Parameter Conditions Min Typ Max Unit

Differential non DAC output buffer ON - - ±2

DNL
linearity (2) DAC output buffer OFF - - ±2
- monotonicity 10 bits Guaranteed
DAC output buffer ON
- - ±4
Integral non CL ≤ 50 pF, RL ≥ 5 kΩ
INL
linearity(3) DAC output buffer OFF
- - ±4
CL ≤ 50 pF, no RL

VREF+ = 3.6 V - - ±12

DAC output buffer ON
CL ≤ 50 pF, RL ≥ 5 kΩ LSB
Offset error at
Offset VREF+ = 1.8 V - - ±25
code 0x800(3)
DAC output buffer OFF
- - ±8
CL ≤ 50 pF, no RL
Offset error at DAC output buffer OFF
Offset1 - - ±5
code 0x001(4) CL ≤ 50 pF, no RL

Offset Error at VREF+ = 3.6 V - - ±5

DAC output buffer ON
OffsetCal code 0x800
CL ≤ 50 pF, RL ≥ 5 kΩ
after calibration VREF+ = 1.8 V - - ±7

DAC output buffer ON

- - ±0.5
CL ≤ 50 pF, RL ≥ 5 kΩ
(5)
Gain Gain error %
DAC output buffer OFF
- - ±0.5
CL ≤ 50 pF, no RL
DAC output buffer ON
Total - - ±30
CL ≤ 50 pF, RL ≥ 5 kΩ
TUE unadjusted LSB
error DAC output buffer OFF
- - ±12
CL ≤ 50 pF, no RL
Total
unadjusted DAC output buffer ON
TUECal - - ±23 LSB
error after CL ≤ 50 pF, RL ≥ 5 kΩ
calibration
DAC output buffer ON
CL ≤ 50 pF, RL ≥ 5 kΩ - 71.2 -
Signal-to-noise 1 kHz, BW 500 kHz
SNR dB
ratio DAC output buffer OFF
CL ≤ 50 pF, no RL, 1 kHz - 71.6 -
BW 500 kHz
DAC output buffer ON
- -78 -
Total harmonic CL ≤ 50 pF, RL ≥ 5 kΩ, 1 kHz
THD dB
distortion DAC output buffer OFF
- -79 -
CL ≤ 50 pF, no RL, 1 kHz

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Table 75. DAC 1MSPS accuracy(1) (continued)

Symbol Parameter Conditions Min Typ Max Unit

DAC output buffer ON

Signal-to-noise - 70.4 -
CL ≤ 50 pF, RL ≥ 5 kΩ, 1 kHz
SINAD and distortion dB
ratio DAC output buffer OFF
- 71 -
CL ≤ 50 pF, no RL, 1 kHz
DAC output buffer ON
- 11.4 -
Effective CL ≤ 50 pF, RL ≥ 5 kΩ, 1 kHz
ENOB bits
number of bits DAC output buffer OFF
- 11.5 -
CL ≤ 50 pF, no RL, 1 kHz
1. Guaranteed by design - Not tested in production.
2. Difference between two consecutive codes - 1 LSB.
3. Difference between measured value at Code i and the value at Code i on a line drawn between Code 0 and last Code 4095.
4. Difference between the value measured at Code (0x001) and the ideal value.
5. Difference between ideal slope of the transfer function and measured slope computed from code 0x000 and 0xFFF when
buffer is OFF, and from code giving 0.2 V and (VREF+ – 0.2) V when buffer is ON.

Table 76. DAC 15MSPS characteristics(1)

Symbol Parameter Conditions Min Typ Max Unit

Analog supply voltage for

VDDA - 1.71 - 3.6
DAC ON
VREF+ Positive reference voltage - 1.71 - VDDA V

VREF- Negative reference voltage - VSSA

Voltage on DAC_OUT
VDAC_OUT - 0 - VREF+ V
output
10%-90% - 16 22
5%-95% - 21 29
VDDA>2,7V
With One comparator 1%-99% - 33 46
Settling time (full scale: for on DAC output
32lsb - 40 53
a 12-bit code transition
between the lowest and the 1lsb - 64 87
tSETTLING ns
highest input codes when 10%-90% - 24 32
DAC_OUT reaches final
value) VDDA>2,7V 5%-95% - 32 43
With One comparator 1%-99% - 49 67
and OPAMP on DAC
output 32lsb - 57 75
1lsb - 93 125

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Table 76. DAC 15MSPS characteristics(1) (continued)

Symbol Parameter Conditions Min Typ Max Unit

10%-90% - 16 88
5%-95% - 21 116
VDDA<2,7V
With One comparator 1%-99% - 33 181
Settling time (full scale: for on DAC output
32lsb - 40 196
a 12-bit code transition
between the lowest and the 1lsb - 64 332
tSETTLING ns
highest input codes when 10%-90% - 24 128
DAC_OUT reaches final
value) VDDA<2,7V 5%-95% - 32 170
With One comparator 1%-99% - 49 265
and OPAMP on DAC
output 32lsb - 57 284
1lsb - 93 483
Wakeup time from off state
(setting the ENx bit in the
tWAKEUP(2) Normal mode CL ≤ 10 pF - 1.4 3.5 µs
DAC Control register) until
final value ±1 LSB
VDD > 2.7 V 65 85 -
PSRR VDDA supply rejection ratio dB
VDD <2.7 V 40 85 -
Sampling time in sample
and hold mode (code
transition between the
tSAMP lowest input code and the - - 0.7 - µs
highest input code when
DACOUT reaches final
value ±1LSB)
Internal sample and hold
CIint - - 4 5 pF
capacitor
Voltage decay rate in
dV/dt (hold CSH = 4 pF
Sample and hold mode, - 50 - mV/ms
phase) T = 55°C
during hold phase
DAC consumption from
IDDA(DAC) No load, middle code (0x800) - - 0.2
VDDA
µA
DAC consumption from
IDDV(DAC) No load, middle code (0x800)(3) - 720 955
VREF+
1. Guaranteed by design - Not tested in production.
2. In buffered mode, the output can overshoot above the final value for low input code (starting from min value).
3. Worst case consumption is at code 0x800.

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Table 77. DAC 15MSPS accuracy(1)

Symbol Parameter Conditions Min Typ Max Unit

DNL Differential non linearity (2) - -2 - 2

(3)
INL Integral non linearity CL ≤ 50 pF, no RL -5 - 5
TUE Total unadjusted error CL ≤ 50 pF, no RL -5 - 5 LSB

Spike amplitude on DAC voltage when

DCS Dynamic code spike - 0 4
DAC output value is decreasing
1. Guaranteed by design - Not tested in production.
2. Difference between two consecutive codes - 1 LSB.
3. Difference between measured value at code i and the value at code i on a line drawn between code 0 and last code 4095.
Offset error is included.

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5.3.21 Voltage reference buffer characteristics

Table 78. VREFBUF characteristics(1)

Symbol Parameter Conditions Min Typ Max Unit

VRS = 00 2.4 - 3.6

Normal mode VRS = 01 2.8 - 3.6

Analog supply VRS = 10 3.135 - 3.6

VDDA
voltage VRS= 00 1.65 - 2.4
Degraded mode(2) VRS = 01 1.65 - 2.8
VRS= 10 1.65 - 3.135
V
VRS= 00 2.044 2.048 2.052
Normal mode(3) VRS= 01 2.496 2.5 2.504

VREFBUF_ Voltage reference VRS = 10 2.896 2.9 2.904

OUT output VRS= 00 VDDA -250 mV - VDDA
Degraded mode(2) VRS = 01 VDDA -250 mV - VDDA
VRS = 10 VDDA -250 mV - VDDA
Voltage reference See
VREFOUT_ output spread over Figure 31,
(3) VDDA = 3V - - mV
TEMP the temperature Figure 32,
range Figure 33
Trim step
TRIM - - ±0.05 ±0.1 %
resolution
CL Load capacitor - 0.5 1 1.5 µF
Equivalent Serial
esr - - - 2 Ω
Resistor of Cload
Iload Static load current - - - 6.5 mA
Iline_reg(4) Line regulation - - 1000 2000 ppm/V
500 μA ≤ Normal ppm/m
Iload_reg Load regulation - 50 500
Iload ≤4 mA mode A
-40 °C < TJ < +125 °C - - Tcoeff_vr
Temperature
TCoeff efint + ppm/ °C
coefficient 0 °C < TJ < +50 °C - - 50(5)

Power supply DC 40 55 -
PSRR dB
rejection 100 kHz 25 40 -
CL = 0.5 µF(6) - 300 350
tSTART Start-up time CL = 1.1 µF(6) - 500 650 µs
CL = 1.5 µF(6) - 650 800

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Table 78. VREFBUF characteristics(1) (continued)

Symbol Parameter Conditions Min Typ Max Unit

Control of
maximum DC
current drive on
IINRUSH - - 8 - mA
VREFBUF_
OUT during start-
up phase (7)
Iload = 0 µA - 16 25
VREFBUF Iload = 500 µA - 18 30
IDDA(VREF
consumption from µA
BUF) Iload = 4 mA - 35 50
VDDA
Iload = 6.5 mA - 45 80
1. Guaranteed by design, unless otherwise specified.
2. In degraded mode, the voltage reference buffer can not maintain accurately the output voltage which follows (VDDA - drop
voltage).
3. Guaranteed by characterization results.
4. Line regulation is given for overall supply variation, in normal mode.
5. Tcoeff_vrefint refer to Tcoeff parameter in the embedded voltage reference section.
6. The capacitive load must include a 100 nF low ESR capacitor in order to cut-off the high frequency noise.
7. To correctly control the VREFBUF inrush current during start-up phase and scaling change, the VDDA voltage should be in
the range [2.4 V to 3.6 V], [2.8 V to 3.6 V] and [3.135 V to 3.6 V] respectively for VRS=0,1 and 2.

Figure 31. VREFOUT_TEMP in case VRS = 00

2.06

2.055

2.05

2.045

2.04

2.035

2.03

2.025
-40 -20 0 20 40 60 80 100 120 °C

Mean Min Max

MSv62522V1

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Figure 32. VREFOUT_TEMP in case VRS = 01

2.51

2.505

2.5

2.495

2.49

2.485

2.48

2.475
-40 -20 0 20 40 60 80 100 120 °C

Mean Min Max

MSv62523V1

Figure 33. VREFOUT_TEMP in case VRS = 10

V

2.91

2.905

2.9

2.895

2.89

2.885

2.88

2.875

2.87
-40 -20 0 20 40 60 80 100 120 °C

Mean Min Max

MSv62524V1

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5.3.22 Comparator characteristics

Table 79. COMP characteristics(1)

Symbol Parameter Conditions Min Typ Max Unit

VDDA Analog supply voltage - 1.62 - 3.6

Comparator input voltage
VIN - 0 - VDDA V
range
VBG(2) Scaler input voltage - VREFINT
VSC(3) Scaler offset voltage - - ±5 ±10 mV

Scaler static consumption from BRG_EN=0 (bridge disable) - 200 300 nA

IDDA(SCALER)
VDDA BRG_EN=1 (bridge enable) - 0.8 1 µA
tSTART_SCALER Scaler startup time - - 100 200 µs
Comparator startup time to
tSTART reach propagation delay - - - 5 µs
specification
Propagation delay (From VDDA < 2.7 V - - 35 ns
(4) COMP input pin to COMP 50pF load on
tD
output pin) for 200 mV step output VDDA ≥2.7 V - 16.7 31 ns
with 100 mV overdrive
Full VDDA voltage range, full
Voffset(3) Comparator offset error -9 -6/+2 3 mV
temperature range
HYST[2:0] = 0 - 0 -
HYST[2:0] =1 4 9 16
HYST[2:0] = 2 7 18 32
HYST[2:0] = 3 11 27 47
Vhys Comparator hysteresis mV
HYST[2:0] = 4 15 36 63
HYST[2:0] = 5 19 45 79
HYST[2:0] = 6 23 54 95
HYST[2:0] = 7 26 63 110
Static - 450 720
Comparator consumption from
IDDA(COMP) With 50 kHz ±100 mV overdrive µA
VDDA - 450 -
square signal
1. Guaranteed by design, unless otherwise specified.
2. Refer to Table 20: Embedded internal voltage reference.
3. Guaranteed by characterization results.
4. Typical value (3V) is an average for all comparators propagation delay.

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5.3.23 Operational amplifiers characteristics

Table 80. OPAMP characteristics(1) (2)

Symbol Parameter Conditions Min Typ Max Unit

VDDA Analog supply voltage - 2 3.3 3.6 V

Common mode input
CMIR - 0 - VDDA V
range
25 °C, No Load on output. - - ±1.5
VIOFFSET(3) Input offset voltage mV
All voltage/temperature. - - ±3
Input offset voltage
∆VIOFFSET - - ±10 - μV/°C
drift
Offset trim step at low
TRIMOFFSE
common input voltage - - 1.1 1.2
TP
(0.1 ₓ VDDA)
mV
Offset trim step at high
TRIMOFFSE
common input voltage - - 1.3 1.65
TN
(0.9 ₓ VDDA)
ILOAD Drive current - - - 500
Drive current in PGA µA
ILOAD_PGA - - - 270
mode
CLOAD Capacitive load - - - 50 pF
Common mode
CMRR - - 60 - dB
rejection ratio
Power supply rejection CLOAD ≤ 50 pf,
PSRR - 80 - dB
ratio RLOAD ≥ 4 kΩ DC Vcom=VDDA/2
Gain Bandwidth 100mV ≤ Output dynamic range ≤ VDDA -
GBW 7 13 - MHz
Product 100mV
Slew rate Normal mode 2.5 6.5 -
SR(3) (from 10 and 90% of V/µs
output voltage) High-speed mode 18 45 -

100mV ≤ Output dynamic range ≤ VDDA -

65 95 -
100mV
AO Open loop gain dB
200mV ≤ Output dynamic range ≤ VDDA -
75 95 -
200mV
High saturation Iload = max or Rload = min Input at VDDA. VDDA
VOHSAT(3) - -
voltage Follower mode - 100
mV
I = max or Rload = min Input at 0.
VOLSAT(3) Low saturation voltage load - - 100
Follower mode
φm Phase margin Follower mode, Vcom=VDDA/2 - 65 - °
GM Gain margin Follower mode, Vcom=VDDA/2 - 10 - dB

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Table 80. OPAMP characteristics(1) (2) (continued)

Symbol Parameter Conditions Min Typ Max Unit

CLOAD ≤ 50 pf,
RLOAD ≥ 4 kΩ
Normal mode - 3 6
follower
configuration
Wake up time from
tWAKEUP(3) CLOAD ≤ 50 pf, µs
OFF state.
RLOAD ≥
High-speed mode 20 kΩ - 3 6
follower
configuration
OPAMP input bias
Ibias See lleak parameter in Table 54: I/O static characteristics for given pin.
current
PGA Gain = 2 0.1 ≤ Out VDDA < 2.2 -2 - 2
dynamic range ≤ VDDA -
0.1 VDDA ≥ 2.2 -1 - 1

PGA Gain=4, 100mV ≤ Output dynamic

-1 - 1
range ≤ VDDA - 100mV
PGA Gain=8 100mV ≤ Output dynamic
Non inverting gain -1 - 1
range ≤ VDDA - 100mV %
value(4)
PGA Gain=16, 100mV ≤ Output dynamic
-1 - 1
range ≤ VDDA - 100mV
PGA Gain=32 200mV ≤ Output ≤ VDDA -
-2 - 2
200mV
PGA Gain=64 200mV ≤ Output dynamic
-2 - 2
range ≤ VDDA - 200mV
PGA gain
PGA Gain = -1 VDDA < 2.2 -2 - 2
100mV ≤ Output dynamic
range ≤ VDDA - 100mV VDDA ≥ 2.2 -1 - 1

PGA Gain=-3, 100mV ≤ Output dynamic

-1 - 1
range ≤ VDDA - 100mV
PGA Gain=-7 100mV ≤ Output dynamic
-1 - 1
Inverting gain value range ≤ VDDA - 100mV %
PGA Gain=-15, 100mV ≤ Output dynamic
-1 - 1
range ≤ VDDA - 100mV
PGA Gain=-31 200mV ≤ Output ≤ VDDA -
-2 - 2
200mV
PGA Gain=-63 200mV ≤ Output dynamic
-5 - 2
range ≤ VDDA - 200mV

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Table 80. OPAMP characteristics(1) (2) (continued)

Symbol Parameter Conditions Min Typ Max Unit

PGA Gain = 2 - 10/10 -

PGA Gain = 4 - 30/10 -
R2/R1 internal
resistance values in PGA Gain = 8 - 70/10 -
non-inverting PGA PGA Gain = 16 - 150/10 -
mode(5)
PGA Gain = 32 - 310/10 -
PGA Gain = 64 - 630/10 - kΩ/k
Rnetwork
PGA Gain = -1 - 10/10 - Ω

PGA Gain = -3 - 30/10 -

R2/R1 internal PGA Gain = -7 - 70/10 -
resistance values in
inverting PGA mode(5) PGA Gain = -15 - 150/10 -
PGA Gain = -31 - 310/10 -
PGA Gain = -63 - 630/10 -
Resistance variation
Delta R - -15 - +15 %
(R1 or R2)
Gain = 2 - GBW/2 -
Gain = 4 - GBW/4 -
PGA bandwidth for Gain = 8 - GBW/8 -
different non inverting MHz
gain Gain = 16 - GBW/16 -
Gain = 32 - GBW/32 -
Gain = 64 - GBW/64 -
PGA BW
Gain = -1 - GBW/2 -
Gain = -3 - GBW/4 -

PGA bandwidth for Gain = -7 - GBW/8 -

MHz
different inverting gain Gain = -15 - GBW/16 -
Gain = -31 - GBW/32 -
Gain = -63 - GBW/64 -
at 1 kHz, Output loaded with 4 kΩ - 250 - nV/√
eN Voltage noise density
at 10 kHz, Output loaded with 4 kΩ - 90 - Hz

OPAMP consumption Normal mode No load, - 1.3 2.2

IDDA(OPAMP) mA
from VDDA High-speed mode follower mode - 1.4 2.6
ADC sampling time VDDA < 2V 300 - -
TS_OPAMP_VO when reading the
ns
UT OPAMP output. VDDA ≥ 2V 200 - -
OPAINTOEN=1
OPAMP consumption Normal mode - 0.45 0.7
IDDA(OPAMPI no load,
from VDDA. mA
NT) High-speed mode follower mode - 0.5 0.8
OPAINTOEN=1

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1. Guaranteed by design, unless otherwise specified.

2. Data guaranteed on normal and high speed mode unless otherwise specified.
3. Guaranteed by characterization results.
4. Valid also for inverting gain configuration with external bias.
5. R2 is the internal resistance between OPAMP output and OPAMP inverting input. R1 is the internal resistance between
OPAMP inverting input and ground. The PGA gain =1+R2/R1

Figure 34. OPAMP noise density @ 25°C

MSv62525V1

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5.3.24 Temperature sensor characteristics

Table 81. TS characteristics

Symbol Parameter Min Typ Max Unit

TL(1) VTS linearity with temperature - ±1 ±2 °C

(1)
Avg_Slope Average slope 2.3 2.5 2.7 mV/°C
V30 Voltage at 30°C (±5 °C)(2) 0.742 0.76 0.785 V

tSTART-RUN(1) Start-up time in Run mode (start-up of buffer) - 8 15 µs

Start-up time when entering in continuous

tSTART_CONT(3) - 70 120 µs
mode
ADC sampling time when reading the
tS_temp(1) 5 - - µs
temperature
Temperature sensor consumption from VDD,
IDD(TS)(1) - 4.7 7 µA
when selected by ADC
1. Guaranteed by design - Not tested in production.
2. Measured at VDDA = 3.0 V ±10 mV. The V30 ADC conversion result is stored in the TS_CAL1 byte. Refer
to Table 5: Temperature sensor calibration values.
3. Continuous mode means RUN mode or Temperature Sensor ON.

5.3.25 VBAT monitoring characteristics

Table 82. VBAT monitoring characteristics(1)

Symbol Parameter Min Typ Max Unit

R Resistor bridge for VBAT - 3x39 - kΩ

Q Ratio on VBAT measurement - 3 - -
Er(2) Error on Q -10 - 10 %
tS_vbat(2) ADC sampling time when reading the VBAT 12 - - µs
1. 1.55 V < VBAT < 3.6 V.
2. Guaranteed by design - Not tested in production.

Table 83. VBAT charging characteristics

Symbol Parameter Conditions Min Typ Max Unit

Battery VBRS = 0 - 5 -
RBC charging kΩ
VBRS = 1 - 1.5 -
resistor

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5.3.26 Timer characteristics

The parameters given in the following tables are guaranteed by design.
Refer to Section 5.3.14: I/O port characteristics for details on the input/output alternate
function characteristics (output compare, input capture, external clock, PWM output).

Table 84. TIMx(1) characteristics(2)

Symbol Parameter Conditions Min Max Unit

- 1 - tTIMxCLK
tres(TIM) Timer resolution time
fTIMxCLK = 170 MHz 5.88 - ns
Timer external clock - 0 fTIMxCLK/2 MHz
fEXT frequency on CH1 to
CH4 fTIMxCLK = 170 MHz 0 85 MHz

TIMx (except TIM2

- 16
ResTIM Timer resolution and TIM5) bit
TIM2 and TIM5 - 32

16-bit counter clock - 1 65536 tTIMxCLK

tCOUNTER
period fTIMxCLK = 170 MHz 0.00588 385.5 µs
Maximum possible - - 65536 × 65536 tTIMxCLK
tMAX_COUNT count with 32-bit
counter fTIMxCLK = 170 MHz - 25.26 s

Encoder frequency on - 0 fTIMxCLK/4 MHz

fENC
TI1 and TI2 input pins f
TIMxCLK = 170MHz 0 42.5 MHz
Index pulsewidth on
tW(INDEX) - 2 - Tck
ETR input
Min pulsewidth
on TI1 and TI2 inputs
in all encoder modes - 2 - Tck
except directional
tW(TI1, TI2) clock x1
Min pulsewidth
on TI1 and TI2 inputs - 3 - Tck
in directional clock x1
1. TIMx, is used as a general term in which x stands for 1,2,3,4,5,6,7,8,15,16, 17 or 20.
2. Guaranteed by design - Not tested in production.

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Table 85. IWDG min/max timeout period at 32 kHz (LSI)(1)(2)

Min timeout RL[11:0]= Max timeout RL[11:0]=
Prescaler divider PR[2:0] bits Unit
0x000 0xFFF

/4 0 0.125 512
/8 1 0.250 1024
/16 2 0.500 2048
/32 3 1.0 4096 ms
/64 4 2.0 8192
/128 5 4.0 16384
/256 6 or 7 8.0 32768
1. Guaranteed by design - Not tested in production.
2. The exact timings still depend on the phasing of the APB interface clock versus the LSI clock so that there
is always a full RC period of uncertainty.

Table 86. WWDG min/max timeout value at 170 MHz (PCLK)(1)

Prescaler WDGTB Min timeout value Max timeout value Unit

1 0 0.0241 1.542
2 1 0.0482 3.084
ms
4 2 0.0964 6.168
8 3 0.1928 12.336
1. Guaranteed by design - Not tested in production.

5.3.27 Communication interfaces characteristics

I2C interface characteristics
The I2C interface meets the timings requirements of the I2C-bus specification and user
manual rev. 03 for:
• Standard-mode (Sm): with a bit rate up to 100 kbit/s
• Fast-mode (Fm): with a bit rate up to 400 kbit/s
• Fast-mode Plus (Fm+): with a bit rate up to 1 Mbit/s.
The I2C timings requirements are guaranteed by design when the I2C peripheral is properly
configured (refer to reference manual RM0440 "STM32G4 Series advanced Arm®-based
32-bit MCUs") and when the I2CCLK frequency is greater than the minimum shown in the
table below.

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Table 87. Minimum I2CCLK frequency in all I2C modes

Symbol Parameter Condition Min Unit

Standard mode 2
Analog Filtre ON
8
DNF=0
Fast-mode
Analog Filtre OFF
I2CCLK 9
f(I2CCLK) DNF=1 MHz
frequency
Analog Filtre ON
17
Fast-mode DNF=0
Plus Analog Filtre OFF
16
DNF=1

The SDA and SCL I/O requirements are met with the following restrictions:
• The SDA and SCL I/O pins are not “true” open-drain. When configured as open-drain,
the PMOS connected between the I/O pin and VDDIOx is disabled, but is still present.
• The 20mA output drive requirement in Fast-mode Plus is supported partially. This limits
the maximum load Cload supported in Fm+, which is given by these formulas:
– tr(SDA/SCL)=0.8473 x Rp x Cload
– Rp(min)= (VDD - VOL(max)) / IOL(max)
Where Rp is the I2C lines pull-up. Refer to Section 5.3.14: I/O port characteristics for the
I2C I/Os characteristics.
All I2C SDA and SCL I/Os embed an analog filter. Refer to Table 88 below for the analog
filter characteristics:

Table 88. I2C analog filter characteristics(1)

Symbol Parameter Min Max Unit

Maximum pulse width of spikes that

tAF 50(2) 90(3) ns
are suppressed by the analog filter
1. Guaranteed by design - Not tested in production.
2. Spikes with widths below tAF(min) are filtered.
3. Spikes with widths above tAF(max) are not filtered

SPI characteristics
Unless otherwise specified, the parameters given in Table 89 for SPI are derived from tests
performed under the ambient temperature, fPCLKx frequency and supply voltage conditions
summarized in Table 17: General operating conditions.
• Output speed is set to OSPEEDRy[1:0] = 11
• Capacitive load C = 30 pF
• Measurement points are done at CMOS levels: 0.5 x VDD
Refer to Section 5.3.14: I/O port characteristics for more details on the input/output alternate
function characteristics (NSS, SCK, MOSI, MISO for SPI).

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Table 89. SPI characteristics(1)

Symbol Parameter Conditions Min Typ Max(2) Unit

Master mode
2.7 V < VDD < 3.6 V 75
Voltage Range V1
Master mode
1.71 V < VDD < 3.6 V 50
Voltage Range V1
Master transmitter mode
1.71 V < VDD < 3.6 V 50
Voltage Range V1
Slave receiver mode
fSCK
SPI clock frequency 1.71 V < VDD < 3.6 V - - 50 MHz
1/tc(SCK)
Voltage Range V1
Slave mode transmitter/full duplex
2.7 V < VDD < 3.6 V 41
Voltage Range V1
Slave mode transmitter/full duplex
1.71 V < VDD < 3.6 V 27
Voltage Range V1

1.71 V < VDD < 3.6 V

13
Voltage Range V2

tsu(NSS) NSS setup time Slave mode 4*Tpclk - - -

th(NSS) NSS hold time Slave mode 2*Tpclk - - -
tw(SCKH)
SCK high and low time Master mode, SPI prescaler = 2 Tpclk-1 Tpclk Tpclk+1 ns
tw(SCKL)
tsu(MI) Master mode 4 - -
Data input setup time ns
tsu(SI) Slave mode 3 - -
th(MI) Master mode 4 - -
Data input hold time ns
th(SI) Slave mode 1 - -
ta(SO) Data output access time Slave mode 9 - 34 ns
tdis(SO) Data output disable time Slave mode 9 - 16 ns

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Table 89. SPI characteristics(1) (continued)

Symbol Parameter Conditions Min Typ Max(2) Unit

Slave mode
2.7 V < VDD < 3.6 V - 9 12
Voltage Range V1
Slave mode
tv(SO) 1.71 V < VDD < 3.6 V - 9 18
Data output valid time Voltage Range V1
Slave mode
ns
1.71 V < VDD < 3.6 V - 13 22
Voltage Range V2
tv(MO) Master mode - 3.5 4.5
Slave mode 1.71 V < VDD < 3.6 V 6 - -
th(SO)
Data output hold time Slave mode Range V2 9 - -
th(MO) Master mode 2 - -
1. Guaranteed by characterization results.
2. The maximum frequency in Slave transmitter mode is determined by the sum of tv(SO) and tsu(MI) which has to fit into
SCK low or high-phase preceding the SCK sampling edge. This value can be achieved when the SPI communicates with a
master having tsu(MI) = 0 while Duty(SCK) = 50%.

Figure 35. SPI timing diagram - slave mode and CPHA = 0

NSS input

tc(SCK) th(NSS)

tsu(NSS) tw(SCKH) tr(SCK)

CPHA=0
SCK input

CPOL=0

CPHA=0
CPOL=1
ta(SO) tw(SCKL) tv(SO) th(SO) tf(SCK) tdis(SO)

MISO output First bit OUT Next bits OUT Last bit OUT

th(SI)
tsu(SI)

MOSI input First bit IN Next bits IN Last bit IN

MSv41658V1

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Figure 36. SPI timing diagram - slave mode and CPHA = 1

NSS input

tc(SCK)

tsu(NSS) tw(SCKH) tf(SCK) th(NSS)

CPHA=1
SCK input

CPOL=0

CPHA=1
CPOL=1
ta(SO) tw(SCKL) tv(SO) th(SO) tr(SCK) tdis(SO)

MISO output First bit OUT Next bits OUT Last bit OUT

tsu(SI) th(SI)

MOSI input First bit IN Next bits IN Last bit IN

MSv41659V1

1. Measurement points are done at CMOS levels: 0.3 VDD and 0.7 VDD.

Figure 37. SPI timing diagram - master mode

High
NSS input
tc(SCK)
SCK Output

CPHA=0
CPOL=0
CPHA=0
CPOL=1
SCK Output

CPHA=1
CPOL=0
CPHA=1
CPOL=1
tw(SCKH) tr(SCK)
tsu(MI) tw(SCKL) tf(SCK)
MISO
INPUT MSB IN BIT6 IN LSB IN
th(MI)
MOSI
OUTPUT MSB OUT BIT1 OUT LSB OUT

tv(MO) th(MO)

ai14136c

1. Measurement points are done at CMOS levels: 0.3 VDD and 0.7 VDD.

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I2S characteristics
Unless otherwise specified, the parameters given in Table 90 for I2S are derived from tests
performed under the ambient temperature, fPCLKx frequency and VDD supply voltage
conditions summarized in Table 17: General operating conditions, with the following
configuration:
• Output speed is set to OSPEEDRy[1:0] = 10
• Capacitive load C=30pF
• Measurement points are done at CMOS levels: 0.5 VDD
Refer to Section 5.3.14: I/O port characteristics for more details on the input/output alternate
function characteristics (CK,SD,WS).

Table 90. I2S characteristics(1)

Symbol Parameter Conditions Min Max Unit

I2S Main clock

fMCLK - 256x8 K 256 *Fs(2) MHz
output
Master data - 64xFs
fCK I2S clock frequency MHz
Slave data - 64xFs
I2S clock frequency
DCK Slave receiver 30 70 %
duty cycle
tv(WS) WS valid time Master mode - 6
Master mode 3 -
th(WS) WS hold time
Slave mode 2 -
tsu(WS) WS setup time Slave mode 4 -
tsu(SD_MR) Data input setup Master receiver 3 -
tsu(SD_SR) time Slave receiver 4 -
th(SD_MR) Master receiver 4 - ns
Data input hold time
th(SD_SR) Slave receiver 2 -

Slave transmitter (after 2.7 V ≤ VDD ≤ 3.6 V - 15

tv(SD_ST) Data output valid enable edge) 1.65 V ≤ VDD ≤ 3.6 V - 22
time
tv(SD_MT) Master transmitter (after enable edge) - 3
th(SD_ST) Data output hold Slave transmitter (after enable edge) 7 -
th(SD_MT) time Master transmitter (after enable edge) 1 -
1. Guaranteed by characterization results, not tested in production.
2. 256xFs maximum is 49.152 MHz.

Note: Refer to the reference manual RM0440 "STM32G4 Series advanced Arm®-based 32-bit
MCUs" I2S section for more details about the sampling frequency (Fs), fMCK, fCK, DCK
values reflect only the digital peripheral behavior, source clock precision might slightly
change the values DCK depends mainly on ODD bit value. Digital contribution leads to a min
of (I2SDIV/(2*I2SDIV+ODD) and a max (I2SDIV+ODD)/(2*I2SDIV+ODD) and Fs max
supported for each mode/condition.

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SAI characteristics
Unless otherwise specified, the parameters given in Table 91 for SAI are derived from tests
performed under the ambient temperature, fPCLKx frequency and VDD supply voltage condi-
tions summarized inTable 17: General operating conditions, with the following configuration:
• Output speed is set to OSPEEDRy[1:0] = 10
• Capacitive load C = 30 pF
• Measurement points are done at CMOS levels: 0.5 x VDD
Refer to Section 5.3.14: I/O port characteristics for more details on the input/output alternate
function characteristics (CK,SD,FS).

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Table 91. SAI characteristics(1)

Symbol Parameter Conditions Min Max Unit

fMCLK SAI Main clock output - - 50 MHz

Master transmitter
2.7 V ≤ VDD ≤ 3.6 V - 33
Voltage Range 1
Master transmitter
1.71 V ≤ VDD ≤ 3.6 V - 22
Voltage Range 1
Master receiver
- 22
Voltage Range 1
Slave transmitter
fCK SAI clock frequency(2) MHz
2.7 V ≤ VDD ≤ 3.6 V - 45
Voltage Range 1
Slave transmitter
1.71 V ≤ VDD ≤ 3.6 V - 29
Voltage Range 1
Slave receiver
- 50
Voltage Range 1
Slave transmitter
- 13
Voltage Range 2
Master mode
- 15
2.7 V ≤ VDD ≤ 3.6 V
tv(FS) FS valid time ns
Master mode
- 22
1.71 V ≤ VDD ≤ 3.6 V
th(FS) FS hold time Master mode 10 - ns
tsu(FS) FS setup time Slave mode 2 - ns
th(FS) FS hold time Slave mode 1 - ns
tsu(SD_A_MR) Master receiver 2.5 -
Data input setup time ns
tsu(SD_B_SR) Slave receiver 1 -
th(SD_A_MR) Master receiver 5 -
Data input hold time ns
th(SD_B_SR) Slave receiver 1 -
Slave transmitter (after enable edge)
- 11
2.7 V ≤ VDD ≤ 3.6 V
Slave transmitter (after enable edge)
tv(SD_B_ST) Data output valid time - 17 ns
1.71 V ≤ VDD ≤ 3.6 V
Slave transmitter (after enable edge)
- 20
voltage range V2
th(SD_B_ST) Data output hold time Slave transmitter (after enable edge) 10 - ns

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Table 91. SAI characteristics(1) (continued)

Symbol Parameter Conditions Min Max Unit

Master transmitter (after enable edge)

- 14
2.7 V ≤ VDD ≤ 3.6 V
tv(SD_A_MT) Data output valid time ns
Master transmitter (after enable edge)
- 21
1.71 V ≤ VDD ≤ 3.6 V
th(SD_A_MT) Data output hold time Master transmitter (after enable edge) 10 - ns
1. Guaranteed by characterization results.
2. APB clock frequency must be at least twice SAI clock frequency.

Figure 38. SAI master timing waveforms

1/fSCK

SAI_SCK_X
th(FS)

SAI_FS_X
(output) tv(FS) tv(SD_MT) th(SD_MT)

SAI_SD_X
Slot n Slot n+2
(transmit)
tsu(SD_MR) th(SD_MR)

SAI_SD_X Slot n
(receive)
MS32771V1

Figure 39. SAI slave timing waveforms

1/fSCK

SAI_SCK_X
tw(CKH_X) tw(CKL_X) th(FS)

SAI_FS_X
(input) tsu(FS) tv(SD_ST) th(SD_ST)

SAI_SD_X
Slot n Slot n+2
(transmit)
tsu(SD_SR) th(SD_SR)

SAI_SD_X Slot n
(receive)
MS32772V1

CAN (controller area network) interface

Refer to Section 5.3.14: I/O port characteristics for more details on the input/output alternate
function characteristics (FDCANx_TX and FDCANx_RX).

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USB characteristics
The device USB interface is fully compliant with the USB specification version 2.0 and is
USB-IF certified (for Full-speed device operation).

Table 92. USB electrical characteristics(1)

Symbol Parameter Conditions Min Typ Max Unit

VDD USB transceiver operating voltage 3.0(2) - 3.6 V

tCrystal_less USB crystal less operation temperature -15 - 85 °C
RPUI Embedded USB_DP pull-up value during idle 900 1250 1500
Ω
RPUR Embedded USB_PD pull-up value during reception 1400 2300 3200
ZsDRV(3) Output driver impedance(4) Driving high and low 28 36 44 Ω
1. TA = -40 to 125 °C unless otherwise specified.
2. The device USB functionality is ensured down to 2.7 V but not the full USB electrical characteristics, which are degraded in
the 2.7-to-3.0 V voltage range.
3. Guarantee by design.
4. No external termination series resistors are required on USB_PD (D+) and USB_DM (D-); the matching impedance is
already included in the embedded driver.

USART interface characteristics

Unless otherwise specified, the parameters given in Table 93 for USART are derived from
tests performed under the ambient temperature, fPCLKx frequency and VDD supply voltage
conditions summarized in Table 93, with the following configuration:
• Output speed is set to OSPEEDRy[1:0] = 10
• Capacitive load C=30 pF
• Measurement points are done at CMOS levels: 0.5 VDD
Refer to Section 5.3.14: I/O port characteristics for more details on the input/output alternate
function characteristics (NSS, CK, TX, RX for USART).

Table 93. USART electrical characteristics(1)

Symbol Parameter Conditions Min Typ Max Unit

Master mode - - 21
fCK USART clock frequency MHz
Slave mode - - 22
tsu(NSS) NSS setup time Slave mode tker + 2 - -
ns
th(NSS) NSS hold time Slave mode 2 - -
tw(CKH)
CK high and low time Master mode 1/fck/2-1 1/fck/2 1/fck/2+1 ns
tw(CKL)
Master mode tker + 2 - -
tsu(RX) Data input setup time
Slave mode 2 - -
ns
Master mode 1 - -
th(RX) Data input hold time
Slave mode 0.5 - -

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Table 93. USART electrical characteristics(1) (continued)

Symbol Parameter Conditions Min Typ Max Unit

Master mode - 0.5 1.5

tv(TX) Data output valid time
Slave mode - 10 22
ns
Master mode 0 - -
th(RX) Data output hold time
Slave mode 7 - -
1. Based on characterization, not tested in production.

5.3.28 FSMC characteristics

Unless otherwise specified, the parameters given in Table 94 to Table 107 for the FMC
interface are derived from tests performed under the ambient temperature, fHCLK frequency
and VDD supply voltage conditions summarized in Table 17, with the following configuration:
• Output speed is set to OSPEEDRy[1:0] = 11
• Capacitive load C = 30 pF
• Measurement points are done at CMOS levels: 0.5 x VDD
Refer to Section 5.3.14: I/O port characteristics for more details on the input/output
characteristics.

Asynchronous waveforms and timings

Figure 40 through Figure 43 represent asynchronous waveforms and Table 94 through
Table 101 provide the corresponding timings. The results shown in these tables are
obtained with the following FMC configuration:
• AddressSetupTime = 0x1
• AddressHoldTime = 0x1
• DataHoldTime = 0x1
• ByteLaneSetup = 0x1
• DataSetupTime = 0x1 (except for asynchronous NWAIT mode, DataSetupTime = 0x5)
• BusTurnAroundDuration = 0x0
In all timing tables, the THCLK is the HCLK clock period.

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Figure 40. Asynchronous non-multiplexed SRAM/PSRAM/NOR read waveforms

tw(NE)

FMC_NE

tv(NOE_NE) t w(NOE) t h(NE_NOE)

FMC_NOE

FMC_NWE

tv(A_NE) t h(A_NOE)

FMC_A[25:0] Address
tv(BL_NE) t h(BL_NOE)

FMC_NBL[1:0]

t h(Data_NE)

t su(Data_NOE) th(Data_NOE)

t su(Data_NE)

FMC_D[15:0] Data

t v(NADV_NE)

tw(NADV)

FMC_NADV (1)

FMC_NWAIT
th(NE_NWAIT)

tsu(NWAIT_NE)

MS32753V1

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Table 94. Asynchronous non-multiplexed SRAM/PSRAM/NOR read timings(1)(2)

Symbol Parameter Min Max Unit

tw(NE) FMC_NE low time 3 THCLK– 0.5 3THCLK+ 1

tv(NOE_NE) FMC_NEx low to FMC_NOE low 0 1
tw(NOE) FMC_NOE low time 2 THCLK– 0.5 2 THCLK+ 1
th(NE_NOE) FMC_NOE high to FMC_NE high hold time THCLK -
tv(A_NE) FMC_NEx low to FMC_A valid - 2
th(A_NOE) Address hold time after FMC_NOE high 2 THCLK– 1 -
ns
tsu(Data_NE) Data to FMC_NEx high setup time THCLK + 20 -
tsu(Data_NOE) Data to FMC_NOEx high setup time 20 -
th(Data_NOE) Data hold time after FMC_NOE high 0 -
th(Data_NE) Data hold time after FMC_NEx high 0 -
tv(NADV_NE) FMC_NEx low to FMC_NADV low - 1.5
tw(NADV) FMC_NADV low time - THCLK+ 8
1. CL = 30 pF.
2. Guaranteed by characterization results.

Table 95. Asynchronous non-multiplexed SRAM/PSRAM/NOR read-NWAIT

timings(1)(2)
Symbol Parameter Min Max Unit

tw(NE) FMC_NE low time - 8 THCLK + 1

tw(NOE) FMC_NWE low time 7 THCLK - 1 7 THCLK + 0.5

tw(NWAIT) FMC_NWAIT low time THCLK - ns

tsu(NWAIT_NE) FMC_NWAIT valid before FMC_NEx high 5 THCLK + 17 -

th(NE_NWAIT) FMC_NEx hold time after FMC_NWAIT invalid 4 THCLK + 17 -
1. CL = 30 pF.
2. Guaranteed by characterization results.

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STM32G484xE Electrical characteristics

Figure 41. Asynchronous non-multiplexed SRAM/PSRAM/NOR write waveforms

tw(NE)

FMC_NEx

FMC_NOE
tv(NWE_NE) tw(NWE) t h(NE_NWE)

FMC_NWE

tv(A_NE) th(A_NWE)

FMC_A[25:0] Address
tv(BL_NE) th(BL_NWE)

FMC_NBL[1:0] NBL
tv(Data_NE) th(Data_NWE)

FMC_D[15:0] Data
t v(NADV_NE)

tw(NADV)
FMC_NADV (1)

FMC_NWAIT
th(NE_NWAIT)

tsu(NWAIT_NE)
MS32754V1

Table 96. Asynchronous non-multiplexed SRAM/PSRAM/NOR write timings(1)(2)

Symbol Parameter Min Max Unit

tw(NE) FMC_NE low time 3 THCLK - 0.5 3 THCLK + 1

tv(NWE_NE) FMC_NEx low to FMC_NWE low THCLK - 0.5 THCLK + 1
tw(NWE) FMC_NWE low time THCLK -2 THCLK + 1
th(NE_NWE) FMC_NWE high to FMC_NE high hold time THCLK - 0.5 -
tv(A_NE) FMC_NEx low to FMC_A valid - 0
th(A_NWE) Address hold time after FMC_NWE high THCLK - 1 -
ns
tv(BL_NE) FMC_NEx low to FMC_BL valid - 0
th(BL_NWE) FMC_BL hold time after FMC_NWE high THCLK + 0.5 -
tv(Data_NE) Data to FMC_NEx low to Data valid - THCLK + 2
th(Data_NWE) Data hold time after FMC_NWE high THCLK + 6 -
tv(NADV_NE) FMC_NEx low to FMC_NADV low - 1.5
tw(NADV) FMC_NADV low time - THCLK + 0.5
1. CL = 30 pF.
2. Guaranteed by characterization results.

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Table 97. Asynchronous non-multiplexed SRAM/PSRAM/NOR write-NWAIT

timings(1)(2)
Symbol Parameter Min Max Unit

tw(NE) FMC_NE low time 9 THCLK - 1 9 THCLK + 1

tw(NWE) FMC_NWE low time 6 THCLK - 1 6 THCLK + 1
ns
tsu(NWAIT_NE) FMC_NWAIT valid before FMC_NEx high 7 THCLK + 17 -
th(NE_NWAIT) FMC_NEx hold time after FMC_NWAIT invalid 7 THCLK + 17 -
1. CL = 30 pF.
2. Guaranteed by characterization results.

Figure 42. Asynchronous multiplexed PSRAM/NOR read waveforms

tw(NE)

FMC_ NE
tv(NOE_NE) t h(NE_NOE)

FMC_NOE

t w(NOE)

FMC_NWE

tv(A_NE) th(A_NOE)

FMC_ A[25:16] Address

tv(BL_NE) th(BL_NOE)

FMC_ NBL[1:0] NBL

th(Data_NE)
tsu(Data_NE)
t v(A_NE) tsu(Data_NOE) th(Data_NOE)

FMC_ AD[15:0] Address Data

t v(NADV_NE) th(AD_NADV)
tw(NADV)

FMC_NADV

FMC_NWAIT
th(NE_NWAIT)

tsu(NWAIT_NE)

MS32755V1

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Table 98. Asynchronous multiplexed PSRAM/NOR read timings(1)(2)

Symbol Parameter Min Max Unit

tw(NE) FMC_NE low time 3 THCLK - 0.5 3 THCLK + 1

tv(NOE_NE) FMC_NEx low to FMC_NOE low 0 1
tw(NOE) FMC_NOE low time 2 THCLK - 0.5 2 THCLK + 0.5
th(NE_NOE) FMC_NOE high to FMC_NE high hold time THCLK -
tv(A_NE) FMC_NEx low to FMC_A valid - 2
tv(NADV_NE) FMC_NEx low to FMC_NADV low 0.5 1.5
tw(NADV) FMC_NADV low time THCLK THCLK + 1.5
FMC_AD(address) valid hold time after
th(AD_NADV) THCLK - 0.3 - ns
FMC_NADV high
Address hold
until next
th(A_NOE) Address hold time after FMC_NOE high -
read
operation
tsu(Data_NE) Data to FMC_NEx high setup time THCLK + 20 -
tsu(Data_NOE) Data to FMC_NOE high setup time 20 -
th(Data_NE) Data hold time after FMC_NEx high 0 -
th(Data_NOE) Data hold time after FMC_NOE high 0 -
1. CL = 30 pF.
2. Guaranteed by characterization results.

Table 99. Asynchronous multiplexed PSRAM/NOR read-NWAIT timings(1)(2)

Symbol Parameter Min Max Unit

tw(NE) FMC_NE low time 8 THCLK - 1 8 THCLK + 1

tw(NOE) FMC_NWE low time 7 THCLK - 1 7 THCLK + 0.5

ns
tsu(NWAIT_NE) FMC_NWAIT valid before FMC_NEx high 5 THCLK + 17 -

th(NE_NWAIT) FMC_NEx hold time after FMC_NWAIT invalid 4 THCLK + 17 -

1. CL = 30 pF.
2. Guaranteed by characterization results.

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Figure 43. Asynchronous multiplexed PSRAM/NOR write waveforms

tw(NE)

FMC_ NEx

FMC_NOE
tv(NWE_NE) tw(NWE) t h(NE_NWE)

FMC_NWE

tv(A_NE) th(A_NWE)

FMC_ A[25:16] Address

tv(BL_NE) th(BL_NWE)

FMC_ NBL[1:0] NBL

t v(A_NE) t v(Data_NADV) th(Data_NWE)

FMC_ AD[15:0] Address Data

t v(NADV_NE) th(AD_NADV)

tw(NADV)

FMC_NADV

FMC_NWAIT
th(NE_NWAIT)

tsu(NWAIT_NE)
MS32756V1

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STM32G484xE Electrical characteristics

Table 100. Asynchronous multiplexed PSRAM/NOR write timings(1)(2)

Symbol Parameter Min Max Unit

tw(NE) FMC_NE low time 3 THCLK - 0.5 3 THCLK + 1

tv(NWE_NE) FMC_NEx low to FMC_NWE low THCLK - 0.5 THCLK + 1
tw(NWE) FMC_NWE low time THCLK - 2 THCLK + 1
th(NE_NWE) FMC_NWE high to FMC_NE high hold time THCLK - 0.5 -
tv(A_NE) FMC_NEx low to FMC_A valid - 0
tv(NADV_NE) FMC_NEx low to FMC_NADV low 0 1.5
tw(NADV) FMC_NADV low time THCLK + 0.5 THCLK + 1.5
FMC_AD(address) valid hold time after ns
th(AD_NADV) THCLK - 3 -
FMC_NADV high
Address hold
until next
th(A_NWE) Address hold time after FMC_NWE high -
write
operation
th(BL_NWE) FMC_BL hold time after FMC_NWE high THCLK - 0.5 -
tv(BL_NE) FMC_NEx low to FMC_BL valid - 0
tv(Data_NADV) FMC_NADV high to Data valid - THCLK + 2
th(Data_NWE) Data hold time after FMC_NWE high THCLK + 6 -
1. CL = 30 pF.
2. Guaranteed by characterization results.

Table 101. Asynchronous multiplexed PSRAM/NOR write-NWAIT timings(1)(2)

Symbol Parameter Min Max Unit

tw(NE) FMC_NE low time 9 THCLK - 1 9 THCLK + 1

tw(NWE) FMC_NWE low time 6 THCLK - 1 6 THCLK + 0.5

ns
tsu(NWAIT_NE) FMC_NWAIT valid before FMC_NEx high 7 THCLK + 17 -
th(NE_NWAIT) FMC_NEx hold time after FMC_NWAIT invalid 5 THCLK + 17 -
1. CL = 30 pF.
2. Guaranteed by characterization results.

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Synchronous waveforms and timings

Figure 44 through Figure 47 represent synchronous waveforms and Table 102

through Table 105 provide the corresponding timings. The results shown in these
tables are obtained with the following FMC configuration:
• BurstAccessMode = FMC_BurstAccessMode_Enable
• MemoryType = FMC_MemoryType_CRAM
• WriteBurst = FMC_WriteBurst_Enable
• CLKDivision = 1
• DataLatency = 1 for NOR Flash; DataLatency = 0 for PSRAM
In all timing tables, the THCLK is the HCLK clock period.
• For 2.7 V ≤ VDD ≤ 3.6 V, maximum FMC_CLK = 60 MHz for CLKDIV = 0x1 and 54 MHz
for CLKDIV = 0x0 at CL = 30 pF (on FMC_CLK).
• For 1.71 V ≤ VDD ≤ 2.7 V, maximum FMC_CLK = 60 MHz for CLKDIV = 0x1 and
32 MHz for CLKDIV = 0x0 at CL= 20 pF (on FMC_CLK).

Figure 44. Synchronous multiplexed NOR/PSRAM read timings

tw(CLK) tw(CLK) BUSTURN = 0

FMC_CLK

Data latency = 0
td(CLKL-NExL) td(CLKH-NExH)

FMC_NEx
t d(CLKL-NADVL) td(CLKL-NADVH)

FMC_NADV
td(CLKL-AV) td(CLKH-AIV)

FMC_A[25:16]

td(CLKL-NOEL) td(CLKH-NOEH)

FMC_NOE
td(CLKL-ADIV) th(CLKH-ADV)
t d(CLKL-ADV) tsu(ADV-CLKH) tsu(ADV-CLKH) th(CLKH-ADV)

FMC_AD[15:0] AD[15:0] D1 D2
tsu(NWAITV-CLKH) th(CLKH-NWAITV)
FMC_NWAIT
(WAITCFG = 1b,
WAITPOL + 0b)
tsu(NWAITV-CLKH) th(CLKH-NWAITV)
FMC_NWAIT
(WAITCFG = 0b,
WAITPOL + 0b) tsu(NWAITV-CLKH) th(CLKH-NWAITV)

MS32757V1

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Table 102. Synchronous multiplexed NOR/PSRAM read timings(1)(2)(3)

Symbol Parameter Min Max Unit

tw(CLK) FMC_CLK period R*THCLK - 0.5 -

td(CLKL-NExL) FMC_CLK low to FMC_NEx low (x=0..2) - 1.5
td(CLKH_NExH) FMC_CLK high to FMC_NEx high (x= 0…2) R*THCLK/2 + 1 -
td(CLKL-NADVL) FMC_CLK low to FMC_NADV low - 2.5
td(CLKL-NADVH) FMC_CLK low to FMC_NADV high 3.5 -
td(CLKL-AV) FMC_CLK low to FMC_Ax valid (x=16…25) - 4
td(CLKH-AIV) FMC_CLK high to FMC_Ax invalid (x=16…25) R*THCLK/2 + 1 -
td(CLKL-NOEL) FMC_CLK low to FMC_NOE low - 2 ns
td(CLKH-NOEH) FMC_CLK high to FMC_NOE high R*THCLK/2 + 1 -
td(CLKL-ADV) FMC_CLK low to FMC_AD[15:0] valid - 3
td(CLKL-ADIV) FMC_CLK low to FMC_AD[15:0] invalid 0 -
tsu(ADV-CLKH) FMC_A/D[15:0] valid data before FMC_CLK high 2 -
th(CLKH-ADV) FMC_A/D[15:0] valid data after FMC_CLK high 4 -
tsu(NWAIT-CLKH) FMC_NWAIT valid before FMC_CLK high 1.5 -
th(CLKH-NWAIT) FMC_NWAIT valid after FMC_CLK high 4 -
1. CL = 30 pF.
2. Guaranteed by characterization results.
3. Clock ratio R = (HCLK period /FMC_CLK period).

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Figure 45. Synchronous multiplexed PSRAM write timings

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190/235 DS12983 Rev 5

STM32G484xE Electrical characteristics

Table 103. Synchronous multiplexed PSRAM write timings(1)(2)(3)

Symbol Parameter Min Max Unit

tw(CLK) FMC_CLK period R*THCLK - 0.5 -

td(CLKL-NExL) FMC_CLK low to FMC_NEx low (x=0..2) - 1.5
td(CLKH-NExH) FMC_CLK high to FMC_NEx high (x= 0…2) R*THCLK/2 + 1 -
td(CLKL-NADVL) FMC_CLK low to FMC_NADV low - 2.5
td(CLKL-NADVH) FMC_CLK low to FMC_NADV high 3.5 -
td(CLKL-AV) FMC_CLK low to FMC_Ax valid (x=16…25) - 4
td(CLKH-AIV) FMC_CLK high to FMC_Ax invalid (x=16…25) R*THCLK/2 + 1 -
td(CLKL-NWEL) FMC_CLK low to FMC_NWE low - 2
ns
td(CLKH-NWEH) FMC_CLK high to FMC_NWE high R*THCLK/2 + 1 -
td(CLKL-ADV) FMC_CLK low to FMC_AD[15:0] valid - 3
td(CLKL-ADIV) FMC_CLK low to FMC_AD[15:0] invalid 0 -
td(CLKL-DATA) FMC_A/D[15:0] valid data after FMC_CLK low - 3
td(CLKL-NBLL) FMC_CLK low to FMC_NBL low 1 -
td(CLKH-NBLH) FMC_CLK high to FMC_NBL high R*THCLK/2 + 1.5 -
tsu(NWAIT-CLKH) FMC_NWAIT valid before FMC_CLK high 1.5 -
th(CLKH-NWAIT) FMC_NWAIT valid after FMC_CLK high 4 -
1. CL = 30 pF.
2. Guaranteed by characterization results.
3. Clock ratio R = (HCLK period /FMC_CLK period).

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Figure 46. Synchronous non-multiplexed NOR/PSRAM read timings

tw(CLK) tw(CLK)

FMC_CLK
td(CLKL-NExL) td(CLKH-NExH)
Data latency = 0
FMC_NEx
td(CLKL-NADVL) td(CLKL-NADVH)

FMC_NADV
td(CLKL-AV) td(CLKH-AIV)

FMC_A[25:0]

td(CLKL-NOEL) td(CLKH-NOEH)

FMC_NOE
tsu(DV-CLKH) th(CLKH-DV)
tsu(DV-CLKH) th(CLKH-DV)

FMC_D[15:0] D1 D2

tsu(NWAITV-CLKH) th(CLKH-NWAITV)
FMC_NWAIT
(WAITCFG = 1b,
WAITPOL + 0b)
tsu(NWAITV-CLKH) t h(CLKH-NWAITV)
FMC_NWAIT
(WAITCFG = 0b,
WAITPOL + 0b)
tsu(NWAITV-CLKH) th(CLKH-NWAITV)

MS32759V1

Table 104. Synchronous non-multiplexed NOR/PSRAM read timings(1)(2)(3)

Symbol Parameter Min Max Unit

tw(CLK) FMC_CLK period R*THCLK - 0.5 -

td(CLKL-NExL) FMC_CLK low to FMC_NEx low (x=0..2) - 1.5
td(CLKH-NExH) FMC_CLK high to FMC_NEx high (x= 0…2) R*THCLK/2 + 1 -
td(CLKL-NADVL) FMC_CLK low to FMC_NADV low - 2.5
td(CLKL-NADVH) FMC_CLK low to FMC_NADV high 3.5 -
td(CLKL-AV) FMC_CLK low to FMC_Ax valid (x=16…25) - 4 ns
td(CLKH-AIV) FMC_CLK high to FMC_Ax invalid (x=16…25) R*THCLK/2+- 1 -
td(CLKL-NOEL) FMC_CLK low to FMC_NOE low - 2
td(CLKH-NOEH) FMC_CLK high to FMC_NOE high R*THCLK/2 + 1 -
tsu(DV-CLKH) FMC_D[15:0] valid data before FMC_CLK high 2 -
th(CLKH-DV) FMC_D[15:0] valid data after FMC_CLK high 4 -
tsu(NWAIT-CLKH) FMC_NWAIT valid before FMC_CLK high 1.5 -
ns
th(CLKH-NWAIT) FMC_NWAIT valid after FMC_CLK high 4 -

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STM32G484xE Electrical characteristics

1. CL = 30 pF.
2. Guaranteed by characterization results.
3. Clock ratio R = (HCLK period /FMC_CLK period).

Figure 47. Synchronous non-multiplexed PSRAM write timings

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DS12983 Rev 5 193/235

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Table 105. Synchronous non-multiplexed PSRAM write timings(1)(2)(3)

Symbol Parameter Min Max Unit

tw(CLK) FMC_CLK period R*THCLK - 0.5 -

td(CLKL-NExL) FMC_CLK low to FMC_NEx low (x=0..2) - 1.5
td(CLKH-NExH) FMC_CLK high to FMC_NEx high (x= 0…2) R*THCLK/2 + 1 -
td(CLKL-NADVL) FMC_CLK low to FMC_NADV low - 2.5
td(CLKL-NADVH) FMC_CLK low to FMC_NADV high 3.5 -
td(CLKL-AV) FMC_CLK low to FMC_Ax valid (x=16…25) - 4
td(CLKH-AIV) FMC_CLK high to FMC_Ax invalid (x=16…25) R*THCLK/2 + 1 -
ns
td(CLKL-NWEL) FMC_CLK low to FMC_NWE low - 2
td(CLKH-NWEH) FMC_CLK high to FMC_NWE high R*THCLK/2 + 1 -
td(CLKL-Data) FMC_D[15:0] valid data after FMC_CLK low - 3
td(CLKL-NBLL) FMC_CLK low to FMC_NBL low 1 -
td(CLKH-NBLH) FMC_CLK high to FMC_NBL high R*THCLK/2 + 1.5 -
tsu(NWAIT-CLKH) FMC_NWAIT valid before FMC_CLK high 1.5 -
th(CLKH-NWAIT) FMC_NWAIT valid after FMC_CLK high 4 -
1. CL = 30 pF.
2. Guaranteed by characterization results.
3. Clock ratio R = (HCLK period /FMC_CLK period).

NAND controller waveforms and timings

Figure 48 through Figure 51 represent synchronous waveforms, and Table 106 and
Table 107 provide the corresponding timings. The results shown in these tables are
obtained with the following FMC configuration:
• COM.FMC_SetupTime = 0x01
• COM.FMC_WaitSetupTime = 0x03
• COM.FMC_HoldSetupTime = 0x02
• COM.FMC_HiZSetupTime = 0x01
• ATT.FMC_SetupTime = 0x01
• ATT.FMC_WaitSetupTime = 0x03
• ATT.FMC_HoldSetupTime = 0x02
• ATT.FMC_HiZSetupTime = 0x01
• Bank = FMC_Bank_NAND
• MemoryDataWidth = FMC_MemoryDataWidth_16b
• ECC = FMC_ECC_Enable
• ECCPageSize = FMC_ECCPageSize_512Bytes
• TCLRSetupTime = 0
• TARSetupTime = 0
In all timing tables, the THCLK is the HCLK clock period.

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STM32G484xE Electrical characteristics

Figure 48. NAND controller waveforms for read access

FMC_NCEx

ALE (FMC_A17)
CLE (FMC_A16)

FMC_NWE

td(NCE-NOE) th(NOE-ALE)

FMC_NOE (NRE)

tsu(D-NOE) th(NOE-D)

FMC_D[15:0]
MSv38003V1

Figure 49. NAND controller waveforms for write access

FMC_NCEx

ALE (FMC_A17)
CLE (FMC_A16)
td(NCE-NWE) th(NWE-ALE)

FMC_NWE

FMC_NOE (NRE)
tv(NWE-D) th(NWE-D)

FMC_D[15:0]
MSv38004V1

Figure 50. NAND controller waveforms for common memory read access

FMC_NCEx

ALE (FMC_A17)
CLE (FMC_A16)
td(NCE-NOE) th(NOE-ALE)

FMC_NWE

tw(NOE)
FMC_NOE

tsu(D-NOE) th(NOE-D)

FMC_D[15:0]
MSv38005V1

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Figure 51. NAND controller waveforms for common memory write access

FMC_NCEx

ALE (FMC_A17)
CLE (FMC_A16)
td(NCE-NWE) tw(NWE) th(NOE-ALE)

FMC_NWE

FMC_NOE

td(D-NWE)

tv(NWE-D) th(NWE-D)
FMC_D[15:0]

MSv38006V1

Table 106. Switching characteristics for NAND flash memory read cycles(1)(2)
Symbol Parameter Min Max Unit

Tw(N0E) FMC_NOE low width 4 THCLK - 1 4 THCLK

Tsu(D-NOE) FMC_D[15-0] valid data before FMC_NOE high 19 -
Th(NOE-D) FMC_D[15-0] valid data after FMC_NOE high 0 - ns
Td(NCE-NOE) FMC_NCE valid before FMC_NOE low - 3 THCLK
Th(NOE-ALE) FMC_NOE high to FMC_ALE invalid 3 THCLK -
1. CL = 30 pF.
2. Guaranteed by characterization results.

Table 107. Switching characteristics for NAND flash memory write cycles(1)(2)
Symbol Parameter Min Max Unit

Tw(NWE) FMC_NWE low width 4 THCLK -1 4 THCLK

Tv(NWE-D) FMC_NWE low to FMC_D[15-0] valid 0 -
Th(NWE-D) FMC_NWE high to FMC_D[15-0] invalid 3 THCLK - 1 -
ns
Td(D-NWE) FMC_D[15-0] valid before FMC_NWE high 5 THCLK -
Td(NCE_NWE) FMC_NCE valid before FMC_NWE low - 3 THCLK
Th(NWE-ALE) FMC_NWE high to FMC_ALE invalid 3 THCLK -
1. CL = 30 pF.
2. Guaranteed by characterization results.

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5.3.29 QUADSPI characteristics

Unless otherwise specified, the parameters given in Table 108 and Table 109 for Quad SPI
are derived from tests performed under the ambient temperature, fAHB frequency and VDD
supply voltage conditions summarized in Table 17: General operating conditions, with the
following configuration:
• Output speed is set to OSPEEDRy[1:0] = 11
• Capacitive load C = 15 or 20 pF
• Measurement points are done at CMOS levels: 0.5 ₓ VDD
Refer to Section 5.3.14: I/O port characteristics for more details on the input/output alternate
function characteristics.

Table 108. Quad SPI characteristics in SDR mode(1)

Symbol Parameter Conditions Min Typ Max Unit

1.71 < VDD< 3.6 V,

CLOAD = 15 pF - - 50
Quad SPI clock Voltage Range 1
F(QCK) MHz
frequency 1.71 < VDD< 3.6 V,
CLOAD = 20 pF - - 110
Voltage Range 2
tw(CKH) Quad SPI clock high t(CK)/2-0.5 - t(CK)/2+1
PRESCALER [7:0]
and low time
tw(CKL) Even division n =0,1, 3, 5... t(CK)/2-1 - t(CK)/2+0.5

tw(CKH) Quad SPI clock high (n/2)*t(CK)/(n+1) - 0.5 - (n/2)*t(CK)/(n+1) + 1

PRESCALER [7:0]
and low time
tw(CKL) Odd division n =2,4, 6, 8... (n/2+1)*t(CK)/(n+1) - 1 - (n/2+1)*t(CK)/(n+1) +0.5
ns
ts(IN) Data input setup time 1.71 < VDD< 3.6 V 1 - -
th(IN) Data input hold time 1.71 < VDD< 3.6 V 5 - -
Data output valid
tv(OUT) 1.71 < VDD< 3.6 V - 1 1.5
time
th(OUT) Data output hold time 1.71 < VDD< 3.6 V 0.5 - -
1. Guaranteed by characterization results.

Table 109. QUADSPI characteristics in DDR mode(1)

Symbol Parameter Conditions Min Typ Max Unit

1.71 < VDD< 3.6 V,

CLOAD = 15 pF - - 50
Quad SPI clock Voltage Range 1
F(QCK) MHz
frequency 1.71 < VDD< 3.6 V,
CLOAD = 20 pF - - 70
Voltage Range 2

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Table 109. QUADSPI characteristics in DDR mode(1) (continued)

Symbol Parameter Conditions Min Typ Max Unit

tw(CKH) Quad SPI clock high t(CK)/2 - t(CK)/2+1

PRESCALER [7:0]
and low time
tw(CKL) Even division n =0,1, 3, 5 ... t(CK)/2-1 - t(CK)/2

tw(CKH) Quad SPI clock high and (n/2)*t(CK)/(n+1) - (n/2)*t(CK)/(n+1) + 1

PRESCALER [7:0]
low time
tw(CKL) n =2,4, 6, 8... (n/2+1)*t(CK)/(n+1) - 1 - (n/2+1)*t(CK)/(n+1)
Odd division
Data input setup time on
tsr(IN) 1.71 < VDD< 3.6 V 1 - -
rising edge

Data input setup time on

tsf(IN) 1.71 < VDD< 3.6 V 1 - -
falling edge

Data input hold time on

thr(IN) 1.71 < VDD< 3.6 V 6 - -
rising edge

Data input hold time on

thf(IN) 1.71 < VDD< 3.6 V 5 - -
falling edge

1.71 < VDD< 3.6 V

7.5 8 ns
Data output valid time on DHHC = 0
tvr(OUT) -
rising edge 1.71 < VDD< 3.6 V Thclk/2
Thclk/2+1.5
DHHC = 1 +1

1.71 < VDD< 3.6 V

7 10
DHHC = 0
tvf(OUT) Data output valid time -
1.71 < VDD< 3.6 V Thclk/2
Thclk/2+2
DHHC = 1 +1

1.71 < VDD< 3.6 V

2 - -
Data output hold time on DHHC = 0
thr(OUT)
rising edge 1.71 < VDD< 3.6 V
Thclk/2+ 0.5 - -
DHHC = 1

1.71 < VDD< 3.6 V

3 - -
Data output hold time on DHHC = 0
thf(OUT)
falling edge 1.71 < VDD< 3.6 V
Thclk/2+0.5 - -
DHHC = 1

1. Guaranteed by characterization results.

Figure 52. Quad SPI timing diagram - SDR mode

tr(CK) t(CK) tw(CKH) tw(CKL) tf(CK)

Clock
tv(OUT) th(OUT)

Data output D0 D1 D2

ts(IN) th(IN)

Data input D0 D1 D2
MSv36878V1

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Figure 53. Quad SPI timing diagram - DDR mode

tr(CLK) t(CLK) tw(CLKH) tw(CLKL) tf(CLK)

Clock
tvf(OUT) thr(OUT) tvr(OUT) thf(OUT)

Data output IO0 IO1 IO2 IO3 IO4 IO5

tsf(IN) thf(IN) tsr(IN) thr(IN)

Data input IO0 IO1 IO2 IO3 IO4 IO5

MSv36879V3

5.3.30 UCPD characteristics

UCPD1 controller complies with USB Type-C Rev.1.2 and USB Power Delivery Rev. 3.0
specifications.

Table 110. UCPD characteristics

Symbol Parameter Conditions Min Typ Max Unit

Sink mode only 3.0 3.3 3.6 V

VDD UCPD operating supply voltage
Sink and source mode 3.135 3.3 3.465 V

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6 Package information

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.

6.1 WLCSP81 package information (B068)

This WLCSP is a 81-ball, 4.02 x 4.27 mm, 0.4 mm pitch wafer level chip scale package.

Figure 54. WLCSP81 - Outline

DETAIL A
bbb Z A1 BALL
F LOCATION D
A1 e1

e2
E

A 9 1 eee
(4X)
A2 BOTTOM VIEW TOP VIEW

SIDE VIEW
A3 A2 BUMP

b FRONT VIEW
A1

eee Z

b(81x) z
ccc M Z X Y SEATING PLANE
ddd M Z
DETAIL A
ROTATED 90

B068_WLCSP81_DIE469_ME_V1

1. Drawing is not to scale.

2. Dimension is measured at the maximum bump diameter parallel to primary datum Z.
3. Primary datum Z and seating plane are defined by the spherical crowns of the bump.
4. Bump position designation per JESD 95-1, SPP-010.

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Table 111. WLCSP81 - Mechanical data

millimeters inches(1)
Symbol
Min Typ Max Min Typ Max

A(2) - - 0.59 - - 0.023

A1 - 0.18 - - 0.007 -
A2 - 0.38 - - 0.015 -
A3 - 0.025 - - 0.001 -
b 0.22 0.25 0.28 0.009 0.010 0.011
D 4.00 4.02 4.04 0.157 0.158 0.159
E 4.25 4.27 4.29 0.167 0.168 0.169
e - 0.40 - - 0.016 -
e1 - 3.20 - - 0.126 -
e2 - 3.20 - - 0.126 -
F(3) - 0.410 - - 0.016 -
G(3) - 0.535 - - 0.021 -
aaa - - 0.10 - - 0.004
bbb - - 0.10 - - 0.004
ccc - - 0.10 - - 0.004
ddd - - 0.05 - - 0.002
eee - - 0.05 - - 0.002
1. Values in inches are converted from mm and rounded to 3 decimal digits.
2. The maximum total package height is calculated by the RSS method (Root Sum Square) using nominal
and tolerances values of A1 and A2.
3. Calculated dimensions are rounded to the 3rd decimal place

Figure 55. WLCSP81 - Footprint example

Dpad

Dsm
B068_WLCSP81_DIE469_FP_V1

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Table 112. WLCSP81 - Example of PCB design rules

Dimension Values

Pitch 0.4 mm
Dpad 0,225 mm
Dsm 0.290 mm typ. (depends on soldermask registration tolerance)
Stencil opening 0.250 mm
Stencil thickness 0.100 mm

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6.2 UFQFPN48 package information (A0B9)

This UFQFPN is a 48-lead, 7x7 mm, 0.5 mm pitch, ultra thin fine pitch quad flat package.

Figure 56. UFQFPN48 - Outline

Pin 1 identifier
laser marking area
D

A
E E
T Seating
plane
ddd A1
e b

Detail Y
D
Y

Exposed pad
area D2
1

L
48
C 0.500x45°
pin1 corner R 0.125 typ.

E2 Detail Z

48
Z
A0B9_ME_V3

1. Drawing is not to scale.

2. All leads/pads should also be soldered to the PCB to improve the lead/pad solder joint life.
3. There is an exposed die pad on the underside of the UFQFPN48 package. It is recommended to connect
and solder this back-side pad to PCB ground.

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Table 113. UFQFPN48 - Mechanical data

millimeters inches(1)
Symbol
Min Typ Max Min Typ Max

A 0.500 0.550 0.600 0.0197 0.0217 0.0236

A1 0.000 0.020 0.050 0.0000 0.0008 0.0020
D 6.900 7.000 7.100 0.2717 0.2756 0.2795
E 6.900 7.000 7.100 0.2717 0.2756 0.2795
D2 5.500 5.600 5.700 0.2165 0.2205 0.2244
E2 5.500 5.600 5.700 0.2165 0.2205 0.2244
L 0.300 0.400 0.500 0.0118 0.0157 0.0197
T - 0.152 - - 0.0060 -
b 0.200 0.250 0.300 0.0079 0.0098 0.0118
e - 0.500 - - 0.0197 -
ddd - - 0.080 - - 0.0031
1. Values in inches are converted from mm and rounded to 4 decimal digits.

Figure 57. UFQFPN48 - Footprint example

7.30

6.20

48 37

1 36

0.20 5.60

7.30
5.80
6.20

5.60
0.30

12 25

13 24

0.50 0.75
0.55
5.80
A0B9_FP_V2

1. Dimensions are expressed in millimeters.

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6.3 LQFP48 package information (5B)

This LQFP is a 48-pin, 7 x 7 mm low-profile quad flat package.

Figure 58. LQFP48 - Outline

SEATING
PLANE
C

A2
A

A1

c
0.25 mm
GAUGE PLANE
ccc C

D K

A1
L
D1 L1
D3
36 25

37 24

E1
E3

48 13
PIN 1
IDENTIFICATION 1 12

e 5B_ME_V2

1. Drawing is not to scale.

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Table 114. LQFP48 - Mechanical data

millimeters inches(1)
Symbol
Min Typ Max Min Typ Max

A - - 1.600 - - 0.0630
A1 0.050 - 0.150 0.0020 - 0.0059
A2 1.350 1.400 1.450 0.0531 0.0551 0.0571
b 0.170 0.220 0.270 0.0067 0.0087 0.0106
c 0.090 - 0.200 0.0035 - 0.0079
D 8.800 9.000 9.200 0.3465 0.3543 0.3622
D1 6.800 7.000 7.200 0.2677 0.2756 0.2835
D3 - 5.500 - - 0.2165 -
E 8.800 9.000 9.200 0.3465 0.3543 0.3622
E1 6.800 7.000 7.200 0.2677 0.2756 0.2835
E3 - 5.500 - - 0.2165 -
e - 0.500 - - 0.0197 -
L 0.450 0.600 0.750 0.0177 0.0236 0.0295
L1 - 1.000 - - 0.0394 -
k 0° 3.5° 7° 0° 3.5° 7°
ccc - - 0.080 - - 0.0031
1. Values in inches are converted from mm and rounded to 4 decimal digits.

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Figure 59. LQFP48 - Footprint example

0.50
1.20

0.30
36 25
37 24

0.20
7.30
9.70 5.80

7.30

48 13
1 12

1.20

5.80

9.70

ai14911d

1. Dimensions are expressed in millimeters.

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6.4 LQFP64 package information (5W)

This LQFP is a 64-pin, 10 x 10 mm low-profile quad flat package.

Figure 60. LQFP64 - Outline

SEATING PLANE
C
A2
A
0.25 mm
GAUGE PLANE
A1

c
ccc C

A1
D K
D1 L
D3 L1
48 33

32
49

E1
E3

64 17 E

PIN 1 1 16
IDENTIFICATION e
5W_ME_V3

1. Drawing is not to scale.

Table 115. LQFP64 - Mechanical data

millimeters inches(1)
Symbol
Min Typ Max Min Typ Max

A - - 1.600 - - 0.0630
A1 0.050 - 0.150 0.0020 - 0.0059
A2 1.350 1.400 1.450 0.0531 0.0551 0.0571
b 0.170 0.220 0.270 0.0067 0.0087 0.0106
c 0.090 - 0.200 0.0035 - 0.0079
D - 12.000 - - 0.4724 -
D1 - 10.000 - - 0.3937 -
D3 - 7.500 - - 0.2953 -
E - 12.000 - - 0.4724 -
E1 - 10.000 - - 0.3937 -

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Table 115. LQFP64 - Mechanical data (continued)

millimeters inches(1)
Symbol
Min Typ Max Min Typ Max

E3 - 7.500 - - 0.2953 -
e - 0.500 - - 0.0197 -
K 0° 3.5° 7° 0° 3.5° 7°
L 0.450 0.600 0.750 0.0177 0.0236 0.0295
L1 - 1.000 - - 0.0394 -
ccc - - 0.080 - - 0.0031
1. Values in inches are converted from mm and rounded to 4 decimal digits.

Figure 61. LQFP64 - Footprint example

48 33

0.3
49 0.5 32

12.7

10.3

10.3
64 17

1.2
1 16

7.8

12.7

ai14909c

1. Dimensions are expressed in millimeters.

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6.5 LQFP80 package information (9X)

This LQFP is a 80 pin, 12 x 12 mm low-profile quad flat package.
Note: See list of notes in the notes section.

Figure 62. LQFP80 - Outline(15)

BOTTOM VIEW

2 1
(2)
R1
R2

B
H

B-
N
O
TI
C
SE
B GAUGE PLANE

0.25
S
D 1/4 (6) B
L
3
(L1) (1) (11)
E 1/4
4x N/4 TIPS SECTION A-A
aaa C A-B D bbb H A-B D 4x

(N – 4)x e (13)
C
A
(9) (11)
0.05 A2 A1(12) b ddd C A-B D ccc C b WITH
PLATING
D (4)
(2) (5) D1
D (3) (11) (11)
(10)
N c c1
(4)

1
2
3
E 1/4 b1 BASE METAL
(11)
(3)
(3) A (6) B SECTION B-B
D 1/4
E1 E
(2)
(5)

A A
(Section A-A)

TOP VIEW
9X_LQFP80_ME_V2

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Table 116. LQFP80 - Mechanical data

mm inches(14)
Dim.
Min Typ Max Min Typ Max

A - - 1.60 - - 0.0630
(12)
A1 0.05 - 0.15 0.0020 - 0.0059
A2 1.35 1.40 1.45 0.0531 0.0551 0.0571
(9)(11)
b 0.17 0.22 0.27 0.0067 0.0087 0.0106
(11)
b1 0.17 0.20 0.23 0.0067 0.0078 0.0090
(11)
c 0.09 - 0.20 0.0038 - 0.0067
c1(11) 0.09 - 0.16 0.0038 - 0.0063
D 14.00 BSC 0.5512 BSC
D1 12.00 BSC 0.4724 BSC
E 14.00 BSC 0.5512 BSC
E1 12.00 BSC 0.4724 BSC
e 0.50 BSC 0.0197 BSC
L 0.45 0.60 0.75 0.0177 0.0236 0.0295
L1 1.00 REF 0.0394 REF
N(13) 80
θ 0° 3.5° 7° 0° 3.5° 7°

θ1 0° - - 0° - -

θ2 10° 12° 14° 10° 12° 14°

θ3 10° 12° 14° 10° 12° 14°

R1 0.08 - - 0.0031 - -
R2 0.08 - 0.20 0.0031 - 0.0079
S 0.20 - - 0.0079 - -
aaa(1) 0.20 0.0079
(1)
bbb 0.20 0.0079
ccc(1) 0.08 0.0031
(1)
ddd 0.08 0.0031

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Notes:
1. Dimensioning and tolerancing schemes conform to ASME Y14.5M-1994.
2. The Top package body size may be smaller than the bottom package size by as much
as 0.15 mm.
3. Datums A-B and D to be determined at datum plane H.
4. To be determined at seating datum plane C.
5. Dimensions D1 and E1 do not include mold flash or protrusions. Allowable mold flash
or protrusions is “0.25 mm” per side. D1 and E1 are Maximum plastic body size
dimensions including mold mismatch.
6. Details of pin 1 identifier are optional but must be located within the zone indicated.
7. All Dimensions are in millimeters.
8. No intrusion allowed inwards the leads.
9. Dimension “b” does not include dambar protrusion. Allowable dambar protrusion shall
not cause the lead width to exceed the maximum “b” dimension by more than 0.08 mm.
Dambar cannot be located on the lower radius or the foot. Minimum space between
protrusion and an adjacent lead is 0.07 mm for 0.4 mm and 0.5 mm pitch packages.
10. Exact shape of each corner is optional.
11. These dimensions apply to the flat section of the lead between 0.10 mm and 0.25 mm
from the lead tip.
12. A1 is defined as the distance from the seating plane to the lowest point on the package
body.
13. “N” is the number of terminal positions for the specified body size.
14. Values in inches are converted from mm and rounded to 4 decimal digits.
15. Drawing is not to scale.

Figure 63. LQFP80 - Footprint example

0.5
1.25
0.3
14.70

12.30

1.2

9.80

14.70
9X_LQFP80_FP

1. Dimensions are expressed in millimeters.

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6.6 TFBGA100 package information (A08Q)

This TFBGA is a 100-ball, 8 x 8 mm, 0.8 mm pitch fine pitch ball grid array package.

Figure 64. TFBGA100 - Outline

ddd C
SEATING
PLANE

A1

A
A2

A1 ball
index
B

D1 A1 ball area
identifier
e D
F

A
B
C
G

D
E
E1

E
F
G
e

H A
J
K
10 9 8 7 6 5 4 3 2 1

BOTTOM VIEW TOP VIEW

b (100 BALLS)

eee C A B
fff C

A08Q_ME_V1

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Table 117. TFBGA100 - Mechanical data

millimeters inches(1)
Symbol
Min Typ Max Min Typ Max

A - - 1.100 - - 0.0433
A1 0.150 - - 0.0059 - -
A2 - 0.760 - - 0.0299 -
b 0.350 0.400 0.450 0.0138 0.0157 0.0177
D 7.850 8.000 8.150 0.3091 0.3150 0.3209
D1 - 7.200 - - 0.2835 -
E 7.850 8.000 8.150 0.3091 0.3150 0.3209
E1 - 7.200 - - 0.2835 -
e - 0.800 - - 0.0315 -
F - 0.400 - - 0.0157 -
G - 0.400 - - 0.0157 -
ddd - - 0.100 - - 0.0039
eee - - 0.150 - - 0.0059
fff - - 0.080 - - 0.0031
1. Values in inches are converted from mm and rounded to 4 decimal digits.

Figure 65. TFBGA100 - Footprint example

Dpad

Dsm
BGA_WLCSP_FT_V1

Table 118. TFBGA100 - Example of PCB design rules

Dimension Recommended values

Pitch 0.8
Dpad 0.400 mm
0.470 mm typ. (depends on the soldermask
Dsm
registration tolerance)

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Table 118. TFBGA100 - Example of PCB design rules (continued)

Dimension Recommended values

Stencil opening 0.400 mm

Stencil thickness Between 0.100 mm and 0.125 mm
Pad trace width 0.120 mm

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6.7 LQFP100 package information (1L)

This LQFP is 100 lead, 14 x 14 mm low-profile quad flat package.
Note: See list of notes in the notes section.

Figure 66. LQFP100 - Outline(15)

ș2 ș
(2)
R1

H
R2

B
B-
N
O
(6)

TI
C
SE
D1/4 B GAUGE PLANE

S
E1/4
B ș
4x N/4 TIPS
ș L
4x (L1)
aaa C A-B D
bbb H A-B D (1) (11)

BOTTOM VIEW SECTION A-A

(N-4) x e (13)

C
A (9) (11)
0.05
ccc C b WITH PLATING
A2 A1 b aaa C A-BD
(12)

SIDE VIEW

D (4)
(11) c
(2) (5) D1 c1 (11)

D (3)
(10) (4)
N

b1 BASE METAL
1 (11)
2
3 E1/4 SECTION B-B

D1/4 (6) (2)

A B
(5)

E1 E

SECTION A-A

A A

TOP VIEW 1L_LQFP100_ME_V3

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Table 119. LQFP100 - Mechanical data

millimeters inches(14)
Symbol
Min Typ Max Min Typ Max

A - 1.50 1.60 - 0.0590 0.0630

(12)
A1 0.05 - 0.15 0.0019 - 0.0059
A2 1.35 1.40 1.45 0.0531 0.0551 0.0570
(9)(11)
b 0.17 0.22 0.27 0.0067 0.0087 0.0106
(11)
b1 0.17 0.20 0.23 0.0067 0.0079 0.0090
(11)
c 0.09 - 0.20 0.0035 - 0.0079
c1(11) 0.09 - 0.16 0.0035 - 0.0063
(4)
D 16.00 BSC 0.6299 BSC
(2)(5)
D1 14.00 BSC 0.5512 BSC
E(4) 16.00 BSC 0.6299 BSC
E1(2)(5) 14.00 BSC 0.5512 BSC
e 0.50 BSC 0.0197 BSC
L 0.45 0.60 0.75 0.177 0.0236 0.0295
(1)(11)
L1 1.00 - 0.0394 -
N(13) 100
θ 0° 3.5° 7° 0° 3.5° 7°

θ1 0° - - 0° - -

θ2 10° 12° 14° 10° 12° 14°

θ3 10° 12° 14° 10° 12° 14°

R1 0.08 - - 0.0031 - -
R2 0.08 - 0.20 0.0031 - 0.0079
S 0.20 - - 0.0079 - -
aaa(1) 0.20 0.0079
(1)
bbb 0.20 0.0079
ccc(1) 0.08 0.0031
(1)
ddd 0.08 0.0031

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Notes:
1. Dimensioning and tolerancing schemes conform to ASME Y14.5M-1994.
2. The Top package body size may be smaller than the bottom package size by as much
as 0.15 mm.
3. Datums A-B and D to be determined at datum plane H.
4. To be determined at seating datum plane C.
5. Dimensions D1 and E1 do not include mold flash or protrusions. Allowable mold flash
or protrusions is “0.25 mm” per side. D1 and E1 are Maximum plastic body size
dimensions including mold mismatch.
6. Details of pin 1 identifier are optional but must be located within the zone indicated.
7. All Dimensions are in millimeters.
8. No intrusion allowed inwards the leads.
9. Dimension “b” does not include dambar protrusion. Allowable dambar protrusion shall
not cause the lead width to exceed the maximum “b” dimension by more than 0.08 mm.
Dambar cannot be located on the lower radius or the foot. Minimum space between
protrusion and an adjacent lead is 0.07 mm for 0.4 mm and 0.5 mm pitch packages.
10. Exact shape of each corner is optional.
11. These dimensions apply to the flat section of the lead between 0.10 mm and 0.25 mm
from the lead tip.
12. A1 is defined as the distance from the seating plane to the lowest point on the package
body.
13. “N” is the number of terminal positions for the specified body size.
14. Values in inches are converted from mm and rounded to 4 decimal digits.
15. Drawing is not to scale.

Figure 67. LQFP100 - Footprint example

75 51

76 50
0.5

0.3

16.7 14.3

100 26

1.2
1 25

12.3

16.7

1L_LQFP100_FP_V1

1. Dimensions are expressed in millimeters.

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6.8 LQFP128 package information (TC)

This LQFP128 is a 128-pin, 14 x 14 mm low-profile quad flat package.
Note: See list of notes in the notes section.

Figure 68. LQFP128 - Outline(15)

BOTTOM VIEW

2 1
(2)
R1
R2

B
H

B-
N
O
TI
C
SE
(6) B GAUGE PLANE
D 1/4

0.25
S
B
L
E 1/4 3
(L1) (1) (11)
4x N/4 TIPS
SECTION A-A
aaa C A-B D bbb H A-B D 4x

(N – 4)x e (13)
C
A
0.05 A2 A1(12) b ddd C A-B D ccc C (9) (11)
b WITH
PLATING
D (4)
(2) (5) D1
D (3) (11) (11)
(10) N
(4) c c1
1
2
3
E 1/4 b1 BASE METAL
(11)

(3) SECTION B-B

D 1/4
(3) A (6) B
E1 E
(2)
(5)

A A
(Section A-A)

TOP VIEW
TC_LQFP128_ME_V2

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Table 120. LQFP128 - Mechanical data

Millimeters Inches(14)
Symbol
Min. Typ. Max. Min. Typ. Max.

A - - 1.60 - - 0.0630
(12)
A1 0.05 - 0.15 0.0020 - 0.0059
A2 1.35 1.40 1.45 0.0531 0.0551 0.0571
(9)(11)
b 0.13 0.18 0.23 0.0051 0.0071 0.0091
(11)
b1 0.13 0.16 0.19 0.0051 0.0063 0.0075
(11)
c 0.09 - 0.20 0.0035 - 0.0079
c1(11) 0.09 - 0.16 0.0035 - 0.0063
(4)
D 16.00 BSC 0.6299 BSC
(5)
D1 14.00 BSC 0.5512 BSC
E(4) 16.00 BSC 0.6299 BSC
E1(2)(5) 14.00 BSC 0.5512 BSC
e 0.40 BSC 0.0157 BSC
L 0.45 0.60 0.75 0.0177 0.0236 0.0295
L1 1.00 REF 0.0394 REF
N(13) 128
θ 0° 3.5° 7° 0° 3.5° 7°

θ1 0° - - 0° - -

θ2 10° 12° 14° 10° 12° 14°

θ3 10° 12° 14° 10° 12° 14°

R1 0.08 - - 0.0031 - -
R2 0.08 - 0.20 0.0031 - 0.0079
S 0.20 - - 0.0079 - -
aaa(1) 0.20 0.0079
(1)
bbb 0.20 0.0079
ccc(1) 0.08 0.0031
(1)
ddd 0.07 0.0027

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Notes:
1. Dimensioning and tolerancing schemes conform to ASME Y14.5M-1994.
2. The Top package body size may be smaller than the bottom package size by as much
as 0.15 mm.
3. Datums A-B and D to be determined at datum plane H.
4. To be determined at seating datum plane C.
5. Dimensions D1 and E1 do not include mold flash or protrusions. Allowable mold flash
or protrusions is “0.25 mm” per side. D1 and E1 are Maximum plastic body size
dimensions including mold mismatch.
6. Details of pin 1 identifier are optional but must be located within the zone indicated.
7. All Dimensions are in millimeters.
8. No intrusion allowed inwards the leads.
9. Dimension “b” does not include dambar protrusion. Allowable dambar protrusion shall
not cause the lead width to exceed the maximum “b” dimension by more than 0.08 mm.
Dambar cannot be located on the lower radius or the foot. Minimum space between
protrusion and an adjacent lead is 0.07 mm for 0.4 mm and 0.5 mm pitch packages.
10. Exact shape of each corner is optional.
11. These dimensions apply to the flat section of the lead between 0.10 mm and 0.25 mm
from the lead tip.
12. A1 is defined as the distance from the seating plane to the lowest point on the package
body.
13. “N” is the number of terminal positions for the specified body size.
14. Values in inches are converted from mm and rounded to 4 decimal digits.
15. Drawing is not to scale.

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Figure 69. LQFP128 - Footprint example

16.70
14.30
12.40

96 65

64
97

12.40

16.70
14.30
0.25

128
33

1 32
0.40 TC_LQFP128_FP_V2

1. Dimensions are expressed in millimeters.

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6.9 UFBGA121 package information (B0CU)

This UFBGA is a 121 balls, 6 x 6 mm, 0.5 mm pitch, fine pitch, square ball grid array
package.

Figure 70. UFBGA121 - Outline

SEATING
PLANE

ddd C
C

A4 A2 A1 A

SIDE VIEW

E
B

E1

e F
A

F
L
K
J
H
G
F D1 D
E
D
C
B
e
A

1 2 3 4 5 6 7 8 9 10 11

b (121 BALLS)
A1 INDEX CORNER AREA
eee C A B
fff C

BOTTOM VIEW

B0CU_UFBGA121_ME_V1

1. Drawing is not to scale.

2. The terminal A1 corner must be identified on the top surface by using a corner chamfer, ink or metalized
markings, or other feature of package body or integral heat slug.
A distinguishing feature is allowable on the bottom surface of the package to identify the terminal A1
corner. Exact shape of each corner is optional.

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Table 121. UFBGA121 - Mechanical data

millimeters inches(1)
Symbol
Min Typ Max Min Typ Max

A(2) - - 0.60 - - 0.0236

A1 - - 0.11 - - 0.0043
A2 - 0.13 - - 0.0051 -
A4 - 0.32 - - 0.0126 -
(3)
b 0.24 0.29 0.34 0.0094 0.0114 0.0134
D 5.85 6.00 6.15 0.2303 0.2362 0.2421
D1 - 5.00 - - 0.1969 -
E 5.85 6.00 6.15 0.2303 0.2362 0.2421
E1 - 5.00 - - 0.1969 -
e - 0.50 - - 0.0197 -
F - 0.50 - - 0.0197 -
ddd - - 0.08 - - 0.0031
(4)
eee - - 0.15 - - 0.0059
(5)
fff - - 0.05 - - 0.0020
1. Values in inches are converted from mm and rounded to 4 decimal digits.
2. - UFBGA stands for Ultra-Thin Profile Fine Pitch Ball Grid Array.
- Ultra Thin profile: 0.50 < A ≤ 0.65mm / Fine pitch: e < 1.00mm pitch.
- The total profile height (Dim A) is measured from the seating plane to the top of the component
- The maximum total package height is calculated by the following methodology:
A Max = A1 Typ + A2 Typ + A4 Typ + √ (A1²+A2²+A4² tolerance values)
3. The typical balls diameters before mounting is 0.20 mm
4. The tolerance of position that controls the location of the pattern of balls with respect to datum A and B.
For each ball there is a cylindrical tolerance zone eee perpendicular to datum C and located on true
position with respect
to datum A and B as defined by e. The axis perpendicular to datum C of each ball must lie within this
tolerance zone.
5. The tolerance of position that controls the location of the balls within the matrix with respect to each other.
For each ball there is a cylindrical tolerance zone fff perpendicular to datum C and located on true position
as defined by e. The axis perpendicular to datumC of each ball must lie within this tolerance zone.
Each tolerance zone fff in the array is contained entirely in the respective zone eee above. The axis of each
ball must lie simultaneously in both tolerance zones.

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Figure 71. UFBGA121 - Footprint example

Dpad

Dsm

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6.10 Device marking

Refer to technical note “Reference device marking schematics for STM32 microcontrollers
and microprocessors” (TN1433) available on www.st.com, for the location of pin 1 / ball A1
as well as the location and orientation of the marking areas versus pin 1 / ball A1.
Parts marked as “ES”, “E” or accompanied by an engineering sample notification letter, are
not yet qualified and therefore not approved for use in production. ST is not responsible for
any consequences resulting from such use. In no event will ST be liable for the customer
using any of these engineering samples in production. ST’s Quality department must be
contacted prior to any decision to use these engineering samples to run a qualification
activity.

WLCSP81 device marking

The following figure gives an example of the locations and orientation of the marking areas
versus pin 1 and allows engineering samples to be identified.
Whit the device test markings oriented as shown below, pin 1 is always located at bottom
left.

Figure 72. WLCSP81 marking example (package top view)

Product
identification (1) 32G83ME6 Ball 1
identification

Date code
Revision code
Y WW R

MSv63421V1

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6.11 Thermal characteristics

The maximum chip-junction temperature, TJ max, in degrees Celsius, may be calculated
using the following equation:
TJ max = TA max + (PD max x ΘJA)
Where:
• TA max is the maximum ambient temperature in °C,
• ΘJA is the package junction-to-ambient thermal resistance, in °C/W,
• PD max is the sum of PINT max and PI/O max (PD max = PINT max + PI/Omax),
• PINT max is the product of IDD and VDD, expressed in Watts. This is the maximum chip
internal power.
PI/O max represents the maximum power dissipation on output pins where:
PI/O max = Σ (VOL × IOL) + Σ ((VDDIOx – VOH) × IOH),
taking into account the actual VOL / IOL and VOH / IOH of the I/Os at low and high level in the
application.

Table 122. Package thermal characteristics

Symbol Parameter Value Unit

Thermal resistance junction-ambient

43.0
LQFP128 - 14 × 14 mm
Thermal resistance junction-ambient
46.2
LQFP100 - 14 × 14 mm
Thermal resistance junction-ambient
46.8
LQFP80 - 12 × 12 mm
Thermal resistance junction-ambient
47.9
LQFP64 - 10 × 10 mm
Thermal resistance junction-ambient
ΘJA 55.2 °C/W
LQFP48 - 7 × 7 mm
Thermal resistance junction-ambient
30.8
TFBGA100 - 8 × 8 mm
Thermal resistance junction-ambient
TBD
UFBGA121 - 6 × 6 mm
Thermal resistance junction-ambient
26.8
UFQFPN48 - 7 × 7 mm
Thermal resistance junction-ambient
45
WLCSP81 - 4.02 X 4.27 mm

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Table 122. Package thermal characteristics (continued)

Symbol Parameter Value Unit

Thermal resistance junction-case

7.0
LQFP128 - 14 × 14 mm
Thermal resistance junction-case
8.3
LQFP100 - 14 × 14 mm
Thermal resistance junction-case
8.2
LQFP80 - 12 × 12 mm
Thermal resistance junction-case
8.0
LQFP64 - 10 × 10 mm
Thermal resistance junction-case
ΘJC 9.6 °C/W
LQFP48 - 7 × 7 mm
Thermal resistance junction-case
13
TFBGA100 - 8 × 8 mm
Thermal resistance junction-case
TBD
UFBGA121 - 6 × 6 mm
Thermal resistance junction-case 2(1)
UFQFPN48 - 7 × 7 mm 7.5
Thermal resistance junction-case
1.46
WLCSP81 - 4.02 X 4.27 mm
Thermal resistance junction-board
19.9
LQFP128 - 14 × 14 mm
Thermal resistance junction-board
22.9
LQFP100 - 14 × 14 mm
Thermal resistance junction-board
22.3
LQFP80 - 12 × 12 mm
Thermal resistance junction-board
21.8
LQFP64 - 10 × 10 mm
Thermal resistance junction-board
ΘJB 24.3 °C/W
LQFP48 - 7 × 7 mm
Thermal resistance junction-board
13.42
TFBGA100 - 8 × 8 mm
Thermal resistance junction-board
TBD
UFBGA121 - 6 × 6 mm
Thermal resistance junction-board
11
UFQFPN48 - 7 × 7 mm
Thermal resistance junction-board
27.45
WLCSP81 - 4.02 X 4.27 mm
1. Thermal resistance junction-case where the case is the bottom thermal pad on the UFQFPN package.

6.11.1 Reference document

JESD51-2 Integrated Circuits Thermal Test Method Environment Conditions - Natural
Convection (Still Air). Available from www.jedec.org

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6.11.2 Selecting the product temperature range

When ordering the microcontroller, the temperature range is specified in the ordering
information scheme shown in Section 7: Ordering information.
Each temperature range suffix corresponds to a specific guaranteed ambient temperature at
maximum dissipation and, to a specific maximum junction temperature.
As applications do not commonly use the STM32G484xE at maximum dissipation, it is
useful to calculate the exact power consumption and junction temperature to determine
which temperature range is best suited to the application.
The following examples show how to calculate the temperature range needed for a given
application.

Example 1: High-performance application

Assuming the following application conditions:
Maximum ambient temperature TAmax = 82 °C (measured according to JESD51-2),
IDDmax = 50 mA, VDD = 3.5 V, maximum 20 I/Os used at the same time in output at low
level with IOL = 8 mA, VOL= 0.4 V and maximum 8 I/Os used at the same time in output
at low level with IOL = 20 mA, VOL= 1.3 V
PINTmax = 50 mA × 3.5 V= 175 mW
PIOmax = 20 × 8 mA × 0.4 V + 8 × 20 mA × 1.3 V = 272 mW
This gives: PINTmax = 175 mW and PIOmax = 272 mW:
PDmax = 175 + 272 = 447 mW
Using the values obtained in TJmax is calculated as follows:
– For LQFP100, 42 °C/W
TJmax = 82 °C + (42 °C/W × 447 mW) = 82 °C + 18.774 °C = 100.774 °C
This is within the range of the suffix 6 version parts (–40 < TJ < 105 °C) see Section 7:
Ordering information.
In this case, parts must be ordered at least with the temperature range suffix 6 (see
Section 7: Ordering information).
Note: With this given PDmax we can find the TAmax allowed for a given device temperature range
(order code suffix 6 or 7).
Suffix 6: TAmax = TJmax - (42 °C/W × 447 mW) = 105 - 18.774 = 86.226 °C
Suffix 3: TAmax = TJmax - (42°C/W × 447 mW) = 130-18.774 = 111.226 °C
Example 2: High-temperature application
Using the same rules, it is possible to address applications that run at high ambient
temperatures with a low dissipation, as long as junction temperature TJ remains within the
specified range.

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Assuming the following application conditions:

Maximum ambient temperature TAmax = 100 °C (measured according to JESD51-2),
IDDmax = 20 mA, VDD = 3.5 V, maximum 20 I/Os used at the same time in output at low
level with IOL = 8 mA, VOL= 0.4 V
PINTmax = 20 mA × 3.5 V= 70 mW
PIOmax = 20 × 8 mA × 0.4 V = 64 mW
This gives: PINTmax = 70 mW and PIOmax = 64 mW:
PDmax = 70 + 64 = 134 mW
Thus: PDmax = 134 mW
Using the values obtained in TJmax is calculated as follows:
– For LQFP100, 42 °C/W
TJmax = 100 °C + (42 °C/W × 134 mW) = 100 °C + 5.628 °C = 105.628 °C
This is above the range of the suffix 6 version parts (–40 < TJ < 105 °C).
In this case, parts must be ordered at least with the temperature range suffix 3 (see
Section 7: Ordering information) unless we reduce the power dissipation in order to be able
to use suffix 6 parts.

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7 Ordering information

Table 123. Ordering information

Example: STM32 G 484 V E T 6 x

Device family
STM32 = Arm-based 32-bit microcontroller

Product type
G = General-purpose

Sub-family
484 = STM32G484xE

Pin count
C = 48 pins
R = 64 pins
M = 80 pins, 81 pins
V = 100 pins
P = 121 pins
Q = 128 pins
Code size
E = 512 Kbytes
Package
H = TFBGA
T = LQFP
U = UFQFPN
Y = WLCSP

Temperature range
6 = Industrial temperature range, - 40 to 85 °C (105 °C junction)
3 = Industrial temperature range, - 40 to 125 °C (130 °C junction)
Options
xxx = programmed parts
TR = tape and reel

For a list of available options (memory, package, and so on) or for further information on any
aspect of this device, contact the nearest ST sales office.

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Important security notice STM32G484xE

8 Important security notice

The STMicroelectronics group of companies (ST) places a high value on product security,
which is why the ST product(s) identified in this documentation may be certified by various
security certification bodies and/or may implement our own security measures as set forth
herein. However, no level of security certification and/or built-in security measures can
guarantee that ST products are resistant to all forms of attacks. As such, it is the
responsibility of each of ST's customers to determine if the level of security provided in an
ST product meets the customer needs both in relation to the ST product alone, as well as
when combined with other components and/or software for the customer end product or
application. In particular, take note that:
• ST products may have been certified by one or more security certification bodies, such
as Platform Security Architecture (www.psacertified.org) and/or Security Evaluation
standard for IoT Platforms (www.trustcb.com). For details concerning whether the ST
product(s) referenced herein have received security certification along with the level
and current status of such certification, either visit the relevant certification standards
website or go to the relevant product page on www.st.com for the most up to date
information. As the status and/or level of security certification for an ST product can
change from time to time, customers should re-check security certification status/level
as needed. If an ST product is not shown to be certified under a particular security
standard, customers should not assume it is certified.
• Certification bodies have the right to evaluate, grant and revoke security certification in
relation to ST products. These certification bodies are therefore independently
responsible for granting or revoking security certification for an ST product, and ST
does not take any responsibility for mistakes, evaluations, assessments, testing, or
other activity carried out by the certification body with respect to any ST product.
• Industry-based cryptographic algorithms (such as AES, DES, or MD5) and other open
standard technologies which may be used in conjunction with an ST product are based
on standards which were not developed by ST. ST does not take responsibility for any
flaws in such cryptographic algorithms or open technologies or for any methods which
have been or may be developed to bypass, decrypt or crack such algorithms or
technologies.
• While robust security testing may be done, no level of certification can absolutely
guarantee protections against all attacks, including, for example, against advanced
attacks which have not been tested for, against new or unidentified forms of attack, or
against any form of attack when using an ST product outside of its specification or
intended use, or in conjunction with other components or software which are used by
customer to create their end product or application. ST is not responsible for resistance
against such attacks. As such, regardless of the incorporated security features and/or
any information or support that may be provided by ST, each customer is solely
responsible for determining if the level of attacks tested for meets their needs, both in
relation to the ST product alone and when incorporated into a customer end product or
application.
• All security features of ST products (inclusive of any hardware, software,
documentation, and the like), including but not limited to any enhanced security
features added by ST, are provided on an "AS IS" BASIS. AS SUCH, TO THE EXTENT
PERMITTED BY APPLICABLE LAW, ST DISCLAIMS ALL WARRANTIES, EXPRESS
OR IMPLIED, INCLUDING BUT NOT LIMITED TO THE IMPLIED WARRANTIES OF
MERCHANTABILITY OR FITNESS FOR A PARTICULAR PURPOSE, unless the
applicable written and signed contract terms specifically provide otherwise.

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9 Revision history

Table 124. Document revision history

Date Revision Changes

08-May-2019 1 Initial release.

Updated:
– Features, Section 2: Description, Section 3.6: Multi-AHB bus matrix, Section 3.22:
Operational amplifier (OPAMP), Section 3.25.2: Advanced motor control timer (TIM1,
TIM8, TIM20)
– Table 2: STM32G484xE features and peripheral counts, Table 7: Timer feature
comparison, Table 35: Peripheral current consumption,Table 17: General operating
conditions, Table 66: ADC characteristics, Table 67: Maximum ADC RAIN, Table 75:
DAC 1MSPS accuracy, Table 118: TFBGA100 - Example of PCB design rules,
Table 122: Package thermal characteristics, Table 123: Ordering information
16-Dec-2019 2
– Figure 2: Multi-AHB bus matrix
Added:
– Section 3.39: Quad-SPI memory interface (QUADSPI), Section 5.3.29: QUADSPI
characteristics,
– Table 71: ADC accuracy (Multiple ADCs operation) - limited test conditions 1,
Table 72: ADC accuracy (Multiple ADCs operation) - limited test conditions 2,
Table 73: ADC accuracy (Multiple ADCs operation) - limited test conditions 3
– Figure 58: UFQFPN48 top view example, Figure 61: LQFP48 top view example,
Figure 71: LQFP100 top view example, Figure 74: LQFP128 top view example.
Added:
– Figure 73: LQFP128 - Recommended footprint
Updated:
– Table 1: Device summary
– Table 2: STM32G484xE features and peripheral counts
– Section 3.18: Analog-to-digital converter (ADC)
– Table 17: General operating conditions
– Table 21: Current consumption in Run and Low-power run modes, code with data
processing running from flash in single Bank, ART enable (Cache ON Prefetch OFF)
– Table 22: Current consumption in Run and Low-power run modes, code with data
processing running from flash in dual bank, ART enable (Cache ON Prefetch OFF)
10-Nov-2020 3 – Table 23: Current consumption in Run and Low-power run modes, code with data
processing running from SRAM1
– Table 28: Current consumption in Sleep and Low-power sleep mode flash memory ON
– Table 29: Current consumption in low-power sleep modes, flash memory in power-
down
– Table 30: Current consumption in Stop 1 mode
– Table 31: Current consumption in Stop 0 mode
– Table 32: Current consumption in Standby mode
– Table 51: ESD absolute maximum ratings
– Table 76: DAC 15MSPS characteristics
– Table 79: COMP characteristics
– Table 80: OPAMP characteristics

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Table 124. Document revision history (continued)

Date Revision Changes

Updated:
– Features
– Section 2: Description
– Section 3.4: Embedded flash memory
– Table 2: STM32G484xE features and peripheral counts
– Table 5: Temperature sensor calibration values
– Table 12: STM32G484xE pin definition
– Figure 28: ADC accuracy characteristics
– Figure 29: Typical connection diagram when using the ADC with FT/TT pins featuring
16-Nov-2021 4
analog switch function
– Table 30: Current consumption in Stop 1 mode
– Table 31: Current consumption in Stop 0 mode
– Table 32: Current consumption in Standby mode
– Table 68: ADC accuracy - limited test conditions 1
– Table 69: ADC accuracy - limited test conditions 2
– Table 70: ADC accuracy - limited test conditions 3
– Table 82: VBAT monitoring characteristics
– Figure 73: LQFP128 - Recommended footprint
Updated:
– Table 31: Current consumption in Stop 0 mode
– Section 6: Package information
23-Mar-2023 5 – Table 122: Package thermal characteristics
Added:
– Section 6.10: Device marking
– Section 8: Important security notice

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IMPORTANT NOTICE – PLEASE READ CAREFULLY

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Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or
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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.

© 2023 STMicroelectronics – All rights reserved

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