STM32F427xx STM32F429xx

32b Arm® Cortex®-M4 MCU+FPU, 225DMIPS, up to 2MB Flash/256+4KB RAM, USB

OTG HS/FS, Ethernet, 17 TIMs, 3 ADCs, 20 com. interfaces, camera & LCD-TFT
Datasheet - production data

Features
• Includes ST state-of-the-art patented
technology.
• Core: Arm® 32-bit Cortex®-M4 CPU with FPU,
Adaptive real-time accelerator (ART
Accelerator™) allowing 0-wait state execution LQFP100 (14 × 14 mm) UFBGA176 (10 x 10 mm)
WLCSP143
LQFP144 (20 × 20 mm) UFBGA169 (7 × 7 mm)
from flash memory, frequency up to 180 MHz, LQFP176 (24 × 24 mm)
TFBGA216 (13 x 13 mm)
MPU, 225 DMIPS/1.25 DMIPS/MHz LQFP208 (28 x 28 mm)
(Dhrystone 2.1), and DSP instructions
bit timers up to 180 MHz, each with up to
• Memories four IC/OC/PWM or pulse counter and
– 512 bytes of OTP memory quadrature (incremental) encoder input
– Up to 2 MB of flash memory organized into
two banks allowing read-while-write • Debug mode
– Up to 256+4 KB of SRAM including 64 KB – SWD & JTAG interfaces
of CCM (core coupled memory) data RAM – Cortex®-M4 Trace Macrocell™
– Flexible external memory controller with up • Up to 168 I/O ports with interrupt capability
to 32-bit data bus: SRAM, PSRAM,
SDRAM/LPSDR SDRAM, compact – Up to 164 fast I/Os up to 90 MHz
flash/NOR/NAND memories – Up to 166 5 V-tolerant I/Os
• LCD parallel interface, 8080/6800 modes • Up to 21 communication interfaces
• LCD-TFT controller with fully programmable – Up to 3 × I2C interfaces (SMBus/PMBus)
resolution (total width up to 4096 pixels, total – Up to four USARTs/4 UARTs (11.25 Mbit/s,
height up to 2048 lines and pixel clock up to ISO7816 interface, LIN, IrDA, modem
control)
83 MHz)
– Up to 6 SPIs (45 Mbit/s), 2 with muxed full-
• Chrom-ART Accelerator™ for enhanced duplex I2S for audio class accuracy via
graphic content creation (DMA2D) internal audio PLL or external clock
• Clock, reset, and supply management – 1 x SAI (serial audio interface)
– 1.7 V to 3.6 V application supply and I/Os – 2 × CAN (2.0B active) and SDIO interface
– POR, PDR, PVD, and BOR • Advanced connectivity
– 4-to-26 MHz crystal oscillator – USB 2.0 full-speed device/host/OTG
– Internal 16 MHz factory-trimmed RC (1% controller with on-chip PHY
accuracy) – USB 2.0 high-speed/full-speed
– 32 kHz oscillator for RTC with calibration device/host/OTG controller with dedicated
DMA, on-chip full-speed PHY and ULPI
– Internal 32 kHz RC with calibration
– 10/100 Ethernet MAC with dedicated DMA:
• Low power supports IEEE 1588v2 hardware, MII/RMII
– Sleep, Stop, and Standby modes • 8- to 14-bit parallel camera interface up to
– VBAT supply for RTC, 20×32-bit backup 54 Mbytes/s
registers + optional 4 KB backup SRAM
• True random number generator
• 3×12-bit, 2.4 MSPS ADC: up to 24 channels
and 7.2 MSPS in triple interleaved mode • CRC calculation unit
• 2×12-bit D/A converters • RTC: subsecond accuracy, hardware calendar
• General-purpose DMA: 16-stream DMA • 96-bit unique ID.
controller with FIFOs and burst support • ECOPACK2 compliant packages.
• Up to 17 timers: up to twelve 16-bit and two 32-

October 2024 DS9405 Rev 11 1/240

This is information on a product in full production. www.st.com
 STM32F427xx STM32F429xx

Table 1. Device summary

Reference Part number

STM32F427VG, STM32F427ZG, STM32F427IG, STM32F427AG, STM32F427VI, STM32F427ZI,

STM32F427xx
STM32F427II, STM32F427AI
STM32F429VG, STM32F429ZG, STM32F429IG, STM32F429BG, STM32F429NG,
STM32F429AG, STM32F429VI, STM32F429ZI, STM32F429II,, STM32F429BI,
STM32F429xx
STM32F429NI,STM32F429AI, STM32F429VE, STM32F429ZE, STM32F429IE, STM32F429BE,
STM32F429NE

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Contents

1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

2 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2.1 Full compatibility throughout the family . . . . . . . . . . . . . . . . . . . . . . . . . . 18

3 Functional overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
3.1 Arm® Cortex®-M4 with FPU and embedded flash and SRAM . . . . . . . . . 21
3.2 Adaptive real-time memory accelerator (ART Accelerator™) . . . . . . . . . 21
3.3 Memory protection unit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
3.4 Embedded flash memory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
3.5 CRC (cyclic redundancy check) calculation unit . . . . . . . . . . . . . . . . . . . 22
3.6 Embedded SRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
3.7 Multi-AHB bus matrix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
3.8 DMA controller (DMA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
3.9 Flexible memory controller (FMC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
3.10 LCD-TFT controller (available only on STM32F429xx) . . . . . . . . . . . . . . 24
3.11 Chrom-ART Accelerator™ (DMA2D) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
3.12 Nested vectored interrupt controller (NVIC) . . . . . . . . . . . . . . . . . . . . . . . 25
3.13 External interrupt/event controller (EXTI) . . . . . . . . . . . . . . . . . . . . . . . . . 25
3.14 Clocks and startup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
3.15 Boot modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
3.16 Power supply schemes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
3.17 Power supply supervisor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
3.17.1 Internal reset ON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
3.17.2 Internal reset OFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
3.18 Voltage regulator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
3.18.1 Regulator ON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
3.18.2 Regulator OFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
3.18.3 Regulator ON/OFF and internal reset ON/OFF availability . . . . . . . . . . 32
3.19 Real-time clock (RTC), backup SRAM, and backup registers . . . . . . . . . 32
3.20 Low-power modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
3.21 VBAT operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34

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3.22 Timers and watchdogs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34

3.22.1 Advanced-control timers (TIM1, TIM8) . . . . . . . . . . . . . . . . . . . . . . . . . 36
3.22.2 General-purpose timers (TIMx) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
3.22.3 Basic timers TIM6 and TIM7 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
3.22.4 Independent watchdog . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
3.22.5 Window watchdog . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
3.22.6 SysTick timer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
3.23 Inter-integrated circuit interface ( I2C) . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
3.24 Universal synchronous/asynchronous receiver transmitters (USART) . . 37
3.25 Serial peripheral interface (SPI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
3.26 Inter-integrated sound (I2S) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
3.27 Serial Audio interface (SAI1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
3.28 Audio PLL (PLLI2S) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
3.29 Audio and LCD PLL(PLLSAI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
3.30 Secure digital input/output interface (SDIO) . . . . . . . . . . . . . . . . . . . . . . . 40
3.31 Ethernet MAC interface with dedicated DMA and IEEE 1588 support . . . 40
3.32 Controller area network (bxCAN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
3.33 Universal serial bus on-the-go full-speed (OTG_FS) . . . . . . . . . . . . . . . . 41
3.34 Universal serial bus on-the-go high-speed (OTG_HS) . . . . . . . . . . . . . . . 41
3.35 Digital camera interface (DCMI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
3.36 True random number generator (RNG) . . . . . . . . . . . . . . . . . . . . . . . . . . 42
3.37 General-purpose input/outputs (GPIOs) . . . . . . . . . . . . . . . . . . . . . . . . . . 42
3.38 Analog-to-digital converters (ADCs) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
3.39 Temperature sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
3.40 Digital-to-analog converter (DAC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
3.41 Serial wire JTAG debug port (SWJ-DP) . . . . . . . . . . . . . . . . . . . . . . . . . . 43
3.42 Embedded Trace Macrocell™ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44

4 Pinouts and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45

5 Memory mapping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86

6 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91
6.1 Parameter conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91
6.1.1 Minimum and maximum values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91

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6.1.2 Typical values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91

6.1.3 Typical curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91
6.1.4 Loading capacitor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91
6.1.5 Pin input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91
6.1.6 Power supply scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92
6.1.7 Current consumption measurement . . . . . . . . . . . . . . . . . . . . . . . . . . . 93
6.2 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93
6.3 Operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95
6.3.1 General operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95
6.3.2 VCAP1/VCAP2 external capacitor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97
6.3.3 Operating conditions at power-up / power-down (regulator ON) . . . . . . 98
6.3.4 Operating conditions at power-up / power-down (regulator OFF) . . . . . 98
6.3.5 Reset and power control block characteristics . . . . . . . . . . . . . . . . . . . 99
6.3.6 Overdrive switching characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 100
6.3.7 Supply current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101
6.3.8 Wake-up time from low-power modes . . . . . . . . . . . . . . . . . . . . . . . . . 117
6.3.9 External clock source characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 118
6.3.10 Internal clock source characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 122
6.3.11 PLL characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 124
6.3.12 PLL spread spectrum clock generation (SSCG) characteristics . . . . . 127
6.3.13 Memory characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129
6.3.14 EMC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 131
6.3.15 Absolute maximum ratings (electrical sensitivity) . . . . . . . . . . . . . . . . 133
6.3.16 I/O current injection characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 134
6.3.17 I/O port characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 135
6.3.18 NRST pin characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 141
6.3.19 TIM timer characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 142
6.3.20 Communications interfaces . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 142
6.3.21 12-bit ADC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 158
6.3.22 Temperature sensor characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 164
6.3.23 VBAT monitoring characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 165
6.3.24 Reference voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 165
6.3.25 DAC electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 166
6.3.26 FMC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 169
6.3.27 Camera interface (DCMI) timing specifications . . . . . . . . . . . . . . . . . . 193
6.3.28 LCD-TFT controller (LTDC) characteristics . . . . . . . . . . . . . . . . . . . . . 194
6.3.29 SD/SDIO MMC card host interface (SDIO) characteristics . . . . . . . . . 196

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6.3.30 RTC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 197

7 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 198

7.1 Device marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 198
7.2 LQFP100 package information (1L) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 199
7.3 WLCSP143 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 202
7.3.1 Device marking for WLCSP143 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 204
7.4 LQFP144 package information (1A) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 205
7.5 LQFP176 package information (1T) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 209
7.6 LQFP208 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 213
7.7 UFBGA169 package information (A0YV) . . . . . . . . . . . . . . . . . . . . . . . . 216
7.8 UFBGA(176+25) package information (A0E7) . . . . . . . . . . . . . . . . . . . . 219
7.9 TFBGA216 package information (A0L2) . . . . . . . . . . . . . . . . . . . . . . . . 221
7.10 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 224

8 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 225

Appendix A Recommendations when using internal reset OFF . . . . . . . . . . . 226

A.1 Operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 226

Appendix B Application block diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 227

B.1 USB OTG full speed (FS) interface solutions . . . . . . . . . . . . . . . . . . . . . 227
B.2 USB OTG high speed (HS) interface solutions . . . . . . . . . . . . . . . . . . . . 229
B.3 Ethernet interface solutions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 230

9 Important security notice . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 232

10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 233

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List of tables

Table 1. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Table 2. STM32F427xx and STM32F429xx features and peripheral counts . . . . . . . . . . . . . . . . . . 16
Table 3. Voltage regulator configuration mode versus device operating mode . . . . . . . . . . . . . . . . 29
Table 4. Regulator ON/OFF and internal reset ON/OFF availability. . . . . . . . . . . . . . . . . . . . . . . . . 32
Table 5. Voltage regulator modes in stop mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Table 6. Timer feature comparison . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Table 7. Comparison of I2C analog and digital filters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Table 8. USART feature comparison . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Table 9. Legend/abbreviations used in the pinout table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
Table 10. STM32F427xx and STM32F429xx pin and ball definitions . . . . . . . . . . . . . . . . . . . . . . . . 53
Table 11. FMC pin definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72
Table 12. STM32F427xx and STM32F429xx alternate function mapping . . . . . . . . . . . . . . . . . . . . . 75
Table 13. STM32F427xx and STM32F429xx register boundary addresses. . . . . . . . . . . . . . . . . . . . 87
Table 14. Voltage characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93
Table 15. Current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94
Table 16. Thermal characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94
Table 17. General operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95
Table 18. Limitations depending on the operating power supply range . . . . . . . . . . . . . . . . . . . . . . . 97
Table 19. VCAP1/VCAP2 operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97
Table 20. Operating conditions at power-up / power-down (regulator ON) . . . . . . . . . . . . . . . . . . . . 98
Table 21. Operating conditions at power-up / power-down (regulator OFF). . . . . . . . . . . . . . . . . . . . 98
Table 22. Reset and power control block characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99
Table 23. Over-drive switching characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100
Table 24. Typical and maximum current consumption in Run mode, code with data processing
running from Flash memory (ART accelerator enabled except prefetch) or RAM . . . . . . 102
Table 25. Typical and maximum current consumption in Run mode, code with data processing
running from Flash memory (ART accelerator disabled) . . . . . . . . . . . . . . . . . . . . . . . . . 103
Table 26. Typical and maximum current consumption in Sleep mode . . . . . . . . . . . . . . . . . . . . . . . 104
Table 27. Typical and maximum current consumptions in Stop mode . . . . . . . . . . . . . . . . . . . . . . . 105
Table 28. Typical and maximum current consumptions in Standby mode . . . . . . . . . . . . . . . . . . . . 106
Table 29. Typical and maximum current consumptions in VBAT mode. . . . . . . . . . . . . . . . . . . . . . . 106
Table 30. Typical current consumption in Run mode, code with data processing running from
Flash memory or RAM, regulator ON (ART accelerator enabled except prefetch),
VDD=1.7 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 108
Table 31. Typical current consumption in Run mode, code with data processing running
from Flash memory, regulator OFF (ART accelerator enabled except prefetch). . . . . . . 109
Table 32. Typical current consumption in Sleep mode, regulator ON, VDD=1.7 V . . . . . . . . . . . . . 110
Table 33. Tyical current consumption in Sleep mode, regulator OFF. . . . . . . . . . . . . . . . . . . . . . . . 111
Table 34. Switching output I/O current consumption . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113
Table 35. Peripheral current consumption . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114
Table 36. Low-power mode wakeup timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117
Table 37. High-speed external user clock characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118
Table 38. Low-speed external user clock characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119
Table 39. HSE 4-26 MHz oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120
Table 40. LSE oscillator characteristics (fLSE = 32.768 kHz) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121
Table 41. HSI oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 122
Table 42. LSI oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 123
Table 43. Main PLL characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 124

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Table 44. PLLI2S (audio PLL) characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125

Table 45. PLLISAI (audio and LCD-TFT PLL) characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126
Table 46. SSCG parameters constraint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 127
Table 47. Flash memory characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129
Table 48. Flash memory programming . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129
Table 49. Flash memory programming with VPP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130
Table 50. Flash memory endurance and data retention . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 131
Table 51. EMS characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 131
Table 52. EMI characteristics for fHSE= 25 MHz and fCPU= 168 MHz . . . . . . . . . . . . . . . . . . . . . . 132
Table 53. EMI characteristics for HSE= 25 MHz and fCPU= 180 MHz . . . . . . . . . . . . . . . . . . . . . . 133
Table 54. ESD absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 133
Table 55. Electrical sensitivities . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 134
Table 56. I/O current injection susceptibility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 134
Table 57. I/O static characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 135
Table 58. Output voltage characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 138
Table 59. I/O AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 139
Table 60. NRST pin characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 141
Table 61. TIMx characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 142
Table 62. I2C analog filter characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 143
Table 63. SPI dynamic characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 143
Table 64. I2S dynamic characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 146
Table 65. SAI characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 149
Table 66. USB OTG full speed startup time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 151
Table 67. USB OTG full speed DC electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 151
Table 68. USB OTG full speed electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152
Table 69. USB HS DC electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152
Table 70. USB HS clock timing parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 153
Table 71. Dynamic characteristics: USB ULPI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 154
Table 72. Dynamics characteristics: Ethernet MAC signals for SMI. . . . . . . . . . . . . . . . . . . . . . . . . 155
Table 73. Dynamics characteristics: Ethernet MAC signals for RMII . . . . . . . . . . . . . . . . . . . . . . . . 156
Table 74. Dynamics characteristics: Ethernet MAC signals for MII . . . . . . . . . . . . . . . . . . . . . . . . . 157
Table 75. ADC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 158
Table 76. ADC static accuracy at fADC = 18 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 159
Table 77. ADC static accuracy at fADC = 30 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160
Table 78. ADC static accuracy at fADC = 36 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160
Table 79. ADC dynamic accuracy at fADC = 18 MHz - limited test conditions . . . . . . . . . . . . . . . . . 160
Table 80. ADC dynamic accuracy at fADC = 36 MHz - limited test conditions . . . . . . . . . . . . . . . . . 160
Table 81. Temperature sensor characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 164
Table 82. Temperature sensor calibration values. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 164
Table 83. VBAT monitoring characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 165
Table 84. internal reference voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 165
Table 85. Internal reference voltage calibration values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 165
Table 86. DAC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 166
Table 87. Asynchronous non-multiplexed SRAM/PSRAM/NOR -
read timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 170
Table 88. Asynchronous non-multiplexed SRAM/PSRAM/NOR read -
NWAIT timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 171
Table 89. Asynchronous non-multiplexed SRAM/PSRAM/NOR write timings . . . . . . . . . . . . . . . . . 172
Table 90. Asynchronous non-multiplexed SRAM/PSRAM/NOR write -
NWAIT timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 173
Table 91. Asynchronous multiplexed PSRAM/NOR read timings. . . . . . . . . . . . . . . . . . . . . . . . . . . 174
Table 92. Asynchronous multiplexed PSRAM/NOR read-NWAIT timings . . . . . . . . . . . . . . . . . . . . 174

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Table 93. Asynchronous multiplexed PSRAM/NOR write timings . . . . . . . . . . . . . . . . . . . . . . . . . . 175

Table 94. Asynchronous multiplexed PSRAM/NOR write-NWAIT timings . . . . . . . . . . . . . . . . . . . . 176
Table 95. Synchronous multiplexed NOR/PSRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . . . . 177
Table 96. Synchronous multiplexed PSRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 179
Table 97. Synchronous non-multiplexed NOR/PSRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . 180
Table 98. Synchronous non-multiplexed PSRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . 181
Table 99. Switching characteristics for PC Card/CF read and write cycles
in attribute/common space. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 186
Table 100. Switching characteristics for PC Card/CF read and write cycles
in I/O space . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 187
Table 101. Switching characteristics for NAND Flash read cycles . . . . . . . . . . . . . . . . . . . . . . . . . . . 188
Table 102. Switching characteristics for NAND Flash write cycles. . . . . . . . . . . . . . . . . . . . . . . . . . . 189
Table 103. SDRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 190
Table 104. LPSDR SDRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 190
Table 105. SDRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 192
Table 106. LPSDR SDRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 192
Table 107. DCMI characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 193
Table 108. LTDC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 194
Table 109. Dynamic characteristics: SD / MMC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 197
Table 110. RTC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 197
Table 111. LQFP100 - Mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200
Table 112. WLCSP143 - 143-ball, 4.521x 5.547 mm, 0.4 mm pitch wafer level chip scale
package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 202
Table 113. WLCSP143 recommended PCB design rules . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 204
Table 114. LQFP144 - Mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 206
Table 115. LQFP176 - Mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 210
Table 116. LQFP208 - Mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 214
Table 117. UFBGA169 - Mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 217
Table 118. UFBGA169 - Example of PCB design rules (0.5 mm pitch BGA) . . . . . . . . . . . . . . . . . . . 218
Table 119. UFBGA(176+25) - Mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 219
Table 120. UFBGA(176+25) - Example of PCB design rules (0.65 mm pitch BGA) . . . . . . . . . . . . . 220
Table 121. TFBGA216 - Mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 222
Table 122. TFBGA216 - Example of PCB design rules (0.8 mm pitch) . . . . . . . . . . . . . . . . . . . . . . . 223
Table 123. Package thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 224
Table 124. Limitations depending on the operating power supply range . . . . . . . . . . . . . . . . . . . . . . 226
Table 125. Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 233

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List of figures

Figure 1. Compatible board design STM32F10xx/STM32F2xx/STM32F4xx

for LQFP100 package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Figure 2. Compatible board design between STM32F10xx/STM32F2xx/STM32F4xx
for LQFP144 package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 3. Compatible board design between STM32F2xx and STM32F4xx
for LQFP176 and UFBGA176 packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 4. STM32F427xx and STM32F429xx block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Figure 5. STM32F427xx and STM32F429xx Multi-AHB matrix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Figure 6. Power supply supervisor interconnection with internal reset OFF . . . . . . . . . . . . . . . . . . . 27
Figure 7. PDR_ON control with internal reset OFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Figure 8. Regulator OFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Figure 9. Startup in regulator OFF: slow VDD slope
- power-down reset risen after VCAP_1/VCAP_2 stabilization . . . . . . . . . . . . . . . . . . . . . . . . 31
Figure 10. Startup in regulator OFF mode: fast VDD slope
- power-down reset risen before VCAP_1/VCAP_2 stabilization . . . . . . . . . . . . . . . . . . . . . . 31
Figure 11. STM32F42x LQFP100 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
Figure 12. STM32F42x WLCSP143 ballout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Figure 13. STM32F42x LQFP144 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Figure 14. STM32F42x LQFP176 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
Figure 15. STM32F42x LQFP208 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
Figure 16. STM32F42x UFBGA169 ballout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
Figure 17. STM32F42x UFBGA176 ballout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
Figure 18. STM32F42x TFBGA216 ballout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
Figure 19. Memory map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86
Figure 20. Pin loading conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91
Figure 21. Pin input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91
Figure 22. Power supply scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92
Figure 23. Current consumption measurement scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93
Figure 24. External capacitor CEXT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97
Figure 25. Typical VBAT current consumption (LSE and RTC ON/backup RAM OFF) . . . . . . . . . . . 107
Figure 26. Typical VBAT current consumption (LSE and RTC ON/backup RAM ON) . . . . . . . . . . . . 107
Figure 27. High-speed external clock source AC timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . 119
Figure 28. Low-speed external clock source AC timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120
Figure 29. Typical application with an 8 MHz crystal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121
Figure 30. Typical application with a 32.768 kHz crystal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 122
Figure 31. ACCHSI accuracy versus temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 123
Figure 32. ACCLSI versus temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 124
Figure 33. PLL output clock waveforms in center spread mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128
Figure 34. PLL output clock waveforms in down spread mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128
Figure 35. FT I/O input characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 137
Figure 36. I/O AC characteristics definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140
Figure 37. Recommended NRST pin protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 141
Figure 38. SPI timing diagram - slave mode and CPHA = 0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 145
Figure 39. SPI timing diagram - slave mode and CPHA = 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 145
Figure 40. SPI timing diagram - master mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 146
Figure 41. I2S slave timing diagram (Philips protocol)(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 148
Figure 42. I2S master timing diagram (Philips protocol)(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 148
Figure 43. SAI master timing waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150

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Figure 44. SAI slave timing waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150

Figure 45. USB OTG full speed timings: definition of data signal rise and fall time . . . . . . . . . . . . . . 152
Figure 46. ULPI timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 153
Figure 47. Ethernet SMI timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 155
Figure 48. Ethernet RMII timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 156
Figure 49. Ethernet MII timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 157
Figure 50. ADC accuracy characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 161
Figure 51. Typical connection diagram when using the ADC with FT/TT pins featuring the analog switch
function 162
Figure 52. Power supply and reference decoupling (VREF+ not connected to VDDA). . . . . . . . . . . . . 163
Figure 53. Power supply and reference decoupling (VREF+ connected to VDDA). . . . . . . . . . . . . . . . 164
Figure 54. 12-bit buffered /non-buffered DAC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 168
Figure 55. Asynchronous non-multiplexed SRAM/PSRAM/NOR read waveforms . . . . . . . . . . . . . . 170
Figure 56. Asynchronous non-multiplexed SRAM/PSRAM/NOR write waveforms . . . . . . . . . . . . . . 172
Figure 57. Asynchronous multiplexed PSRAM/NOR read waveforms. . . . . . . . . . . . . . . . . . . . . . . . 173
Figure 58. Asynchronous multiplexed PSRAM/NOR write waveforms . . . . . . . . . . . . . . . . . . . . . . . 175
Figure 59. Synchronous multiplexed NOR/PSRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . . . . 177
Figure 60. Synchronous multiplexed PSRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 178
Figure 61. Synchronous non-multiplexed NOR/PSRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . 180
Figure 62. Synchronous non-multiplexed PSRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . 181
Figure 63. PC Card/CompactFlash controller waveforms for common memory read access . . . . . . 183
Figure 64. PC Card/CompactFlash controller waveforms for common memory write access . . . . . . 183
Figure 65. PC Card/CompactFlash controller waveforms for attribute memory
read access . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 184
Figure 66. PC Card/CompactFlash controller waveforms for attribute memory
write access . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 185
Figure 67. PC Card/CompactFlash controller waveforms for I/O space read access . . . . . . . . . . . . 185
Figure 68. PC Card/CompactFlash controller waveforms for I/O space write access . . . . . . . . . . . . 186
Figure 69. NAND controller waveforms for read access . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 188
Figure 70. NAND controller waveforms for write access . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 188
Figure 71. SDRAM read access waveforms (CL = 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 189
Figure 72. SDRAM write access waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 191
Figure 73. DCMI timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 193
Figure 74. LCD-TFT horizontal timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 195
Figure 75. LCD-TFT vertical timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 195
Figure 76. SDIO high-speed mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 196
Figure 77. SD default mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 196
Figure 78. LQFP100 - Outline(15) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 199
Figure 79. LQFP100 - Footprint example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 201
Figure 80. WLCSP143 - 143-ball, 4.521x 5.547 mm, 0.4 mm pitch wafer level chip scale
package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 202
Figure 81. WLCSP143 - 143-ball, 4.521x 5.547 mm, 0.4 mm pitch wafer level chip scale
package recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 203
Figure 82. WLCSP143 marking example (package top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 204
Figure 83. LQFP144 - Outline(15) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 205
Figure 84. LQFP144 - Footprint example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 208
Figure 85. LQFP176 - Outline(15) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 209
Figure 86. LQFP176 - Footprint example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 212
Figure 87. LQFP208 - Outline(15) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 213
Figure 88. LQFP208 - footprint example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 215
Figure 89. UFBGA169 - Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 216
Figure 90. UFBGA169 - Footprint example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 218

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List of figures STM32F427xx STM32F429xx

Figure 91. UFBGA(176+25) - Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 219

Figure 92. UFBGA(176+25) - Footprint example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 220
Figure 93. TFBGA216 - Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 221
Figure 94. TFBGA216 - Footprint example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 223
Figure 95. USB controller configured as peripheral-only and used
in Full speed mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 227
Figure 96. USB controller configured as host-only and used in full speed mode. . . . . . . . . . . . . . . . 227
Figure 97. USB controller configured in dual mode and used in full speed mode . . . . . . . . . . . . . . . 228
Figure 98. USB controller configured as peripheral, host, or dual-mode
and used in high speed mode. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 229
Figure 99. MII mode using a 25 MHz crystal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 230
Figure 100. RMII with a 50 MHz oscillator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 230
Figure 101. RMII with a 25 MHz crystal and PHY with PLL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 231

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1 Introduction

This datasheet provides the description of the STM32F427xx and STM32F429xx line of
microcontrollers. For more details on the whole STMicroelectronics STM32 family, refer to
Section 2.1: Full compatibility throughout the family.
The STM32F427xx and STM32F429xx datasheet should be read with the STM32F4xx
reference manual.
For information on the Cortex®-M4 core, refer to the Cortex®-M4 programming manual
(PM0214), available from www.st.com.
For information on the device errata with respect to the datasheet and reference manual,
refer to the STM32F427/437xx and STM32F429/439xx errata sheet (ES0206), available
from www.st.com.

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Description STM32F427xx STM32F429xx

2 Description

The STM32F427xx and STM32F429xx devices are based on the high-performance Arm®
Cortex®-M4 32-bit RISC core operating at a frequency of up to 180 MHz. The Cortex®-M4
core features a floating-point unit (FPU) single precision, which supports all Arm® single-
precision data-processing instructions and data types. It also implements a full set of DSP
instructions and a memory protection unit (MPU) which enhances application security.
The STM32F427xx and STM32F429xx devices incorporate high-speed embedded
memories (Flash memory up to 2 Mbyte, up to 256 Kbytes of SRAM), up to 4 Kbytes of
backup SRAM, and an extensive range of enhanced I/Os and peripherals connected to two
APB buses, two AHB buses and a 32-bit multi-AHB bus matrix.
All devices offer three 12-bit ADCs, two DACs, a low-power RTC, 12 general-purpose 16-bit
timers including two PWM timers for motor control, two general-purpose 32-bit timers. They
also feature standard and advanced communication interfaces.
• Up to three I2Cs
• Six SPIs, two I2Ss full duplex. To achieve audio class accuracy, the I2S peripherals can
be clocked via a dedicated internal audio PLL or via an external clock to allow
synchronization.
• Four USARTs plus four UARTs
• An USB OTG full-speed and a USB OTG high-speed with full-speed capability (with the
ULPI),
• Two CANs
• One SAI serial audio interface
• An SDIO/MMC interface
• Ethernet and camera interface
• LCD-TFT display controller
• Chrom-ART Accelerator™.
Advanced peripherals include an SDIO, a flexible memory control (FMC) interface, a
camera interface for CMOS image sensors. Refer to Table 2: STM32F427xx and
STM32F429xx features and peripheral counts for the list of peripherals available on each
part number.
The STM32F427xx and STM32F429xx devices operates in the –40 to +105 °C temperature
range from a 1.7 to 3.6 V power supply.
The supply voltage can drop to 1.7 V with the use of an external power supply supervisor
(refer to Section 3.17.2: Internal reset OFF). A comprehensive set of power-saving mode
allows the design of low-power applications.
The STM32F427xx and STM32F429xx devices offer devices in 8 packages ranging from
100 pins to 216 pins. The set of included peripherals changes with the device chosen.

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These features make the STM32F427xx and STM32F429xx microcontrollers suitable for a
wide range of applications:
• Motor drive and application control
• Medical equipment
• Industrial applications: PLC, inverters, circuit breakers
• Printers, and scanners
• Alarm systems, video intercom, and HVAC
• Home audio appliances
Figure 4 shows the general block diagram of the device family.

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16/240

Description
Table 2. STM32F427xx and STM32F429xx features and peripheral counts
STM32F427 STM32F427 STM32F427 STM32F429 STM32F427
Peripherals STM32F429Vx STM32F429Zx STM32F429Ix STM32F429Bx STM32F429Nx
Vx Zx Ax Ax Ix

Flash memory in Kbytes 1024 2048 512 1024 2048 1024 2048 512 1024 2048 1024 2048 1024 2048 1024 2048 512 1024 2048 512 1024 2048 512 1024 2048

System 256(112+16+64+64)
SRAM in
Kbytes
Backup 4

FMC memory controller Yes(1)

Ethernet Yes

General-
10
purpose

Timers Advanced
2
-control

Basic 2

Random number generator Yes

DS9405 Rev 11

2 (2)
SPI / I S 4/2 (full duplex) 6/2 (full duplex)(2)

I2C 3

USART/
4/4
UART

USB OTG
Yes
Communication FS
interfaces
USB OTG
Yes
HS

CAN 2

SAI 1

STM32F427xx STM32F429xx
SDIO Yes

Camera interface Yes

LCD-TFT (STM32F429xx
No Yes No Yes No Yes No Yes
only)

Chrom-ART Accelerator™ Yes

GPIOs 82 114 130 140 168

3
12-bit ADC
Number of channels 16 24
 Table 2. STM32F427xx and STM32F429xx features and peripheral counts (continued)

STM32F427xx STM32F429xx
STM32F427 STM32F427 STM32F427 STM32F429 STM32F427
Peripherals STM32F429Vx STM32F429Zx STM32F429Ix STM32F429Bx STM32F429Nx
Vx Zx Ax Ax Ix

12-bit DAC Yes

Number of channels 2

Maximum CPU frequency 180 MHz

Operating voltage 1.8 to 3.6 V(3)

Ambient temperatures: –40 to +85 °C /–40 to +105 °C

Operating temperatures
Junction temperature: –40 to + 125 °C

WLCSP143 UFBGA176
Packages LQFP100 UFBGA169 LQFP208 TFBGA216
LQFP144 LQFP176

1. For the LQFP100 package, only FMC Bank1 or Bank2 are available. Bank1 can only support a multiplexed NOR/PSRAM memory using the NE1 Chip Select. Bank2 can only support a 16- or 8-bit
NAND Flash memory using the NCE2 Chip Select. The interrupt line cannot be used since Port G is not available in this package. For UFBGA169 package, only SDRAM, NAND and multiplexed
static memories are supported.
2. The SPI2 and SPI3 interfaces give the flexibility to work in an exclusive way in either the SPI mode or the I2S audio mode.
3. VDD/VDDA minimum value of 1.7 V is obtained when the device operates in reduced temperature range, and with the use of an external power supply supervisor (refer to Section 3.17.2: Internal reset
OFF).
DS9405 Rev 11

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Description STM32F427xx STM32F429xx

2.1 Full compatibility throughout the family

The STM32F427xx and STM32F429xx devices are part of the STM32F4 family. They are
fully pin-to-pin, software and feature compatible with the STM32F2xx devices, allowing the
user to try different memory densities, peripherals, and performances (FPU, higher
frequency) for a greater degree of freedom during the development cycle.
The STM32F427xx and STM32F429xx devices maintain a close compatibility with the
whole STM32F10xx family. All functional pins are pin-to-pin compatible. The STM32F427xx
and STM32F429xx, however, are not drop-in replacements for the STM32F10xx devices:
the two families do not have the same power scheme, and so their power pins are different.
Nonetheless, the transition from the STM32F10xx to the STM32F42x family remains simple
as only a few pins are impacted.
Figure 1, Figure 2, and Figure 3, give compatible board designs between the STM32F4xx,
STM32F2xx, and STM32F10xx families.

Figure 1. Compatible board design STM32F10xx/STM32F2xx/STM32F4xx

for LQFP100 package

75 VSS 51
76 73 50
49

VSS
VSS
ŸUHVLVWRURUVROGHULQJEULGJH
SUHVHQWIRUWKH67032F10xxx
99 (VSS) FRQILJXUDWLRQQRWSUHVHQWLQWKH
100 19 20 26 670)[[FRQILJXUDWLRQ
1 25
VSS
VSS
966IRU670)[[
7ZRŸUHVLVWRUVFRQQHFWHGWR
VDD VSS 9''IRU670)[[
-966IRUWKH670)[[
-966IRUWKH670)[[
-966RU1&IRUWKH670)[[
ai18488d

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STM32F427xx STM32F429xx Description

Figure 2. Compatible board design between STM32F10xx/STM32F2xx/STM32F4xx

for LQFP144 package

ŸUHVLVWRURUVROGHULQJEULGJH
SUHVHQWIRUWKH67032F10xx
108
VSS 73 FRQILJXUDWLRQQRWSUHVHQWLQWKH
106 670)[[FRQILJXUDWLRQ
109 72

71

VSS
1RWSRSXODWHGZKHQŸ
VSS
UHVLVWRURUVROGHULQJ
EULGJHSUHVHQW
6LJQDOIURP
H[WHUQDOSRZHU  3'5B21
VXSSO\
144 37
VXSHUYLVRU 30 31
1 36

VSS
VDD VSS
1RWSRSXODWHGIRU67032F10xx
7ZRŸUHVLVWRUVFRQQHFWHGWR VSS IRU670)[[
- VSS IRUWKH670)[[ VDD VSS VDD IRU670)[[
- VSS, VDD RU1&IRUWKH670)[[
- VDD RUVLJQDOIURPH[WHUQDOSRZHUVXSSO\VXSHUYLVRUIRUWKH670)[[
ai18487d

Figure 3. Compatible board design between STM32F2xx and STM32F4xx

for LQFP176 and UFBGA176 packages

132 89
133 88

48 *1'IRU670)[[
%<3$66B5(*IRU670)[[

6LJQDOIURPH[WHUQDO
SRZHUVXSSO\  3'5B21
VXSHUYLVoU 176 45
1 44

VDD VSS
7ZRŸUHVLVWRUVFRQQHFWHGWR
- VSS, VDD RU1&IRUWKH670)[[
- VDD RUVLJQDOIURPH[WHUQDOSRZHUVXSSO\VXSHUYLVoUIRUWKH670)[[
MS31835V1

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Description STM32F427xx STM32F429xx

Figure 4. STM32F427xx and STM32F429xx block diagram

CLK, NE [3:0], A[23:0],

CCM data RAM 64 KB External memory controller (FMC)
D[31:0], NOEN, NWEN,
NJTRST, JTDI, SRAM, SDRAM, PSRAM, NBL[3:0], SDCLKE[1:0], SDNE[1:0],
AHB3
JTCK/SWCLK JTAG & SW MPU NOR Flash, PC Card, SDNWE, NL
JTDO/SWD, JTDO NAND Flash NRAS, NCAS, NADV
ETM NVIC
TRACECLK NWAIT/NIORD, NREG, CD
TRACED[3:0] D-BUS INTR
Arm Cortex-M4
180 MHz I-BUS
FPU 1MB Flash

ART ACCEL/
S-BUS

CACHE
AHB bus-matrix 8S7M
RNG
MII or RMII as AF Ethernet MAC DMA/ 1MB Flash
MDIO as AF 10/100 FIFO Camera HSYNC, VSYNC

FIFO
SRAM 112 KB PUIXCLK, D[13:0]
interface
DP, DM USB DMA/
SRAM 16 KB
PHY

ULPI:CK, D[7:0], DIR, STP, NXT OTG HS FIFO DP

USB

PHY
FIFO
ID, VBUS, SOF SRAM 64 KB DM
8 Streams OTG FS ID, VBUS, SOF
DMA2 FIFO
AHB2 180 MHz

8 Streams AHB1 180 MHz

DMA1 FIFO VDD
Power managmt
Voltage VDD = 1.8 to 3.6 V
LCD_R[7:0], LCD_G[7:0], LCD_B[7:0], regulator
VSS
LCD_HSYNC, LCD_VSYNC, LCD_DE, LCD-TFT FIFO 3.3 to 1.2 V
LCD_CLK VCAP1, VCAP2
@ V DDA @ V DD
CHROM-ART POR
FIFO Supply
DMA2D RC HS reset supervision
RC LS Int POR/PDR
PA[15:0] GPIO PORT A VDDA, VSSA
BOR
PLL1,2,3 NRST
PB[15:0] GPIO PORT B PVD

PC[15:0] @ V DDA @ V DD
GPIO PORT C
XTAL OSC OSC_IN
PD[15:0] 4- 26MHz OSC_OUT
GPIO PORT D
Reset &
PE[15:0] IWDG
GPIO PORT E clockA G T
M AN
control
Standby
PF[15:0] GPIO PORT F VBAT = 1.65 to 3.6 V
interface
@V
PG[15:0] GPIO PORT G BAT
OSC32_IN
PCLKx
HCLKx

XTAL 32 kHz OSC32_OUT

PH[15:0] GPIO PORT H
LS RTC
AWU
RTC_AF1
PI[15:0] GPIO PORT I RTC_AF1
Backup register
RTC_50HZ
LS

PJ[15:0] 4 KB BKPSRAM
GPIO PORT J

PK[7:0] GPIO PORT K TIM2 32b 4 channels, ETR as AF

TIM3 16b 4 channels, ETR as AF

168 AF DMA2 DMA1 TIM4 16b 4 channels, ETR as AF

EXT IT. WKUP
D[7:0]
AHB/APB2 AHB/APB1 TIM5 32b 4 channels
FIFO

CMD, CK as AF SDIO / MMC

4 compl. chan. (TIM1_CH1[1:4]N), TIM12 16b 2 channels as AF

4 chan. (TIM1_CH1[1:4]ETR, TIM1 / PWM 16b
BKIN as AF TIM13 16b 1 channel as AF
4 compl. chan.(TIM8_CH1[1:4]N),
TIM8 / PWM 16b
4 chan. (TIM8_CH1[1:4], ETR, TIM14 16b 1 channel as AF
BKIN as AF
2 channels as AF TIM9 16b smcard RX, TX as AF
USART2 irDA CTS, RTS as AF
1 channel as AF TIM10 16b WWDG smcard RX, TX as AF
USART3 irDA CTS, RTS as AF
1 channel as AF
TIM11 16b
UART4 RX, TX as AF
RX, TX, CK, smcard
USART1
APB2 90 MHz

CTS, RTS as AF irDA

UART5 RX, TX as AF
RX, TX, CK, smcard
1 3 0 M Hz

CTS, RTS as AF USART6 UART7 RX, TX as AF

irDA
A P B(max)

MOSI, MISO,
SCK, NSS as AF
SPI1 TIM6 16b UART8 RX, TX as AF
A P B 2 60 M Hz

APB1 45 MHz

MOSI, MISO, SPI4 MOSI/SD, MISO/SD_ext, SCK/CK

SCK, NSS as AF TIM7 16b SP2/I2S2
NSS/WS, MCK as AF
MOSI, MISO,
SPI5 MOSI/SD, MISO/SD_ext, SCK/CK
SCK, NSS as AF SP3/I2S3
MOSI, MISO, NSS/WS, MCK as AF
SPI6
SCK, NSS as AF I2C1/SMBUS SCL, SDA, SMBA as AF
Digital filter
FIFO

SD, SCK, FS, MCLK as AF SAI1

I2C2/SMBUS SCL, SDA, SMBA as AF
@ VDDA
VDDREF_ADC U S AR T 2 M
Temperature B ps
sensor
I2C3/SMBUS SCL, SDA, SMBA as AF
DAC1
8 analog inputs common ITF
to the 3 ADCs
ADC1 DAC2 bxCAN1 TX, RX
FIFO

8 analog inputs common ADC2

to the ADC1 & 2 IF
IF bxCAN2 TX, RX
ADC3
8 analog inputs for ADC3
DAC1_OUT DAC2_OUT
@ VDDA
as AF as AF

MSv30420V5.svg

1. The timers connected to APB2 are clocked from TIMxCLK up to 180 MHz, while the timers connected to APB1 are clocked
from TIMxCLK either up to 90 MHz or 180 MHz depending on TIMPRE bit configuration in the RCC_DCKCFGR register.
2. The LCD-TFT is available only on STM32F429xx devices.

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3 Functional overview

3.1 Arm® Cortex®-M4 with FPU and embedded flash and SRAM
The Arm® Cortex®-M4 with FPU processor is the latest generation of Arm® processors for
embedded systems. It was developed to provide a low-cost platform that meets the needs of
MCU implementation, with a reduced pin count and low-power consumption, while
delivering outstanding computational performance and an advanced response to interrupts.
The Arm® Cortex®-M4 with FPU core is a 32-bit RISC processor that features exceptional
code-efficiency, delivering the high-performance expected from an Arm® core in the
memory size usually associated with 8- and 16-bit devices.
The processor supports a set of DSP instructions, which allow efficient signal processing
and complex algorithm execution.
Its single-precision FPU (floating-point unit) speeds up software development by using
metalanguage development tools, while avoiding saturation.
The STM32F42x family is compatible with all Arm tools and software.
Figure 4 shows the general block diagram of the STM32F42x family.
Note: Cortex®-M4 with FPU core is binary compatible with the Cortex®-M3 core.

3.2 Adaptive real-time memory accelerator (ART Accelerator™)

The ART Accelerator™ is a memory accelerator, which is optimized for STM32 industry-
standard Arm® Cortex®-M4 with FPU processors. It balances the inherent performance
advantage of the Arm® Cortex®-M4 with FPU over flash memory at higher frequencies.
To release the processor full 225 DMIPS performance at this frequency, the accelerator
implements an instruction prefetch queue and branch cache, which increases program
execution speed from the 128-bit flash memory. Based on the CoreMark benchmark, the
performance achieved thanks to the ART Accelerator is equivalent to 0 wait state program
execution from the flash memory at a CPU frequency up to 180 MHz.

3.3 Memory protection unit

The memory protection unit (MPU) is used to manage the CPU accesses to memory to
prevent one task to accidentally corrupt the memory or resources used by any other active
task. This memory area is organized into up to 8 protected areas that can in turn be divided
up into 8 subareas. The protection area sizes are between 32 bytes and the whole 4
gigabytes of addressable memory.
The MPU is especially helpful for applications where some critical or certified code has to be
protected against the misbehavior of other tasks. It is usually managed by an RTOS (real-
time operating system). If a program accesses a memory location that is prohibited by the
MPU, the RTOS can detect it and act. In an RTOS environment, the kernel can dynamically
update the MPU area setting, based on the process to be executed.
The MPU is optional and can be bypassed for applications that do not need it.

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3.4 Embedded flash memory

The devices embed 512 bytes of OTP memory, and a flash memory of up to 2 Mbytes
available for storing programs and data.

3.5 CRC (cyclic redundancy check) calculation unit

The CRC (cyclic redundancy check) calculation unit is used to get a CRC code from a 32-bit
data word and a fixed generator polynomial.
Among other applications, CRC-based techniques are used to verify data transmission or
storage integrity. In the scope of the EN/IEC 60335-1 standard, they offer a means of
verifying the flash memory integrity. The CRC calculation unit helps compute a software
signature during runtime, to be compared with a reference signature generated at link-time
and stored at a given memory location.

3.6 Embedded SRAM

All devices embed:
• Up to 256Kbytes of system SRAM including 64 Kbytes of CCM (core coupled memory)
data RAM
RAM memory is accessed (read/write) at CPU clock speed with 0 wait states.
• 4 Kbytes of backup SRAM
This area is accessible only from the CPU. Its content is protected against possible
unwanted write accesses, and is retained in Standby or VBAT mode.

3.7 Multi-AHB bus matrix

The 32-bit multi-AHB bus matrix interconnects all the masters (CPU, DMAs, Ethernet, USB
HS, LCD-TFT, and DMA2D) and the slaves (Flash memory, RAM, FMC, AHB, and APB
peripherals) and ensures a seamless and efficient operation even when several high-speed
peripherals work simultaneously.

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Figure 5. STM32F427xx and STM32F429xx Multi-AHB matrix

64-Kbyte ARM GP GP MAC USB OTG LCD-TFT Chrom ART Accelerator

CCM data RAM Cortex-M4
I-bus DMA1 DMA2 Ethernet HS (DMA2D)

D-bus

S-bus

DMA_PI

DMA_MEM1

DMA_MEM2

DMA_P2

ETHERNET_M

USB_HS_M

LCD-TFT_M

DMA2D
ICODE

ACCEL
Flash
DCODE memory

SRAM1
112 Kbyte
SRAM2
16 Kbyte
SRAM3
64 Kbyte
AHB2 APB1
peripherals
AHB1
peripherals APB2
FMC external
MemCtl
Bus matrix-S

MS30421V6

3.8 DMA controller (DMA)

The devices feature two general-purpose dual-port DMAs (DMA1 and DMA2) with 8
streams each. They are able to manage memory-to-memory, peripheral-to-memory, and
memory-to-peripheral transfers. They feature dedicated FIFOs for APB/AHB peripherals,
support burst transfer and are designed to provide the maximum peripheral bandwidth
(AHB/APB).
The two DMA controllers support circular buffer management, so that no specific code is
needed when the controller reaches the end of the buffer. The two DMA controllers also
have a double buffering feature, which automates the use and switching of two memory
buffers without requiring any special code.
Each stream is connected to dedicated hardware DMA requests, with support for software
trigger on each stream. Configuration is made by software and transfer sizes between
source and destination are independent.

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The DMA can be used with the main peripherals:

• SPI and I2S
• I2C
• USART
• General-purpose, basic, and advanced-control timers TIMx
• DAC
• SDIO
• Camera interface (DCMI)
• ADC
• SAI1.

3.9 Flexible memory controller (FMC)

All devices embed an FMC. It has four Chip Select outputs supporting the following modes:
PCCard/Compact flash, SDRAM/LPSDR SDRAM, SRAM, PSRAM, NOR flash and NAND
flash.
Functionality overview:
• 8-,16-, 32-bit data bus width
• Read FIFO for SDRAM controller
• Write FIFO
• Maximum FMC_CLK/FMC_SDCLK frequency for synchronous accesses is 90 MHz.

LCD parallel interface

The FMC can be configured to interface seamlessly with most graphic LCD controllers. It
supports the Intel 8080 and Motorola 6800 modes, and is flexible enough to adapt to
specific LCD interfaces. This LCD parallel interface capability makes it easy to build cost-
effective graphic applications using LCD modules with embedded controllers or high-
performance solutions using external controllers with dedicated acceleration.

3.10 LCD-TFT controller (available only on STM32F429xx)

The LCD-TFT display controller provides a 24-bit parallel digital RGB (Red, Green, Blue)
and delivers all signals to interface directly to a broad range of LCD and TFT panels up to
XGA (1024x768) resolution with the following features:
• Two display layers with dedicated FIFO (64x32-bit)
• Color look-up table (CLUT) up to 256 colors (256x24-bit) per layer
• Up to eight input color formats selectable per layer
• Flexible blending between two layers using alpha value (per pixel or constant)
• Flexible programmable parameters for each layer
• Color keying (transparency color)
• Up to four programmable interrupt events.

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3.11 Chrom-ART Accelerator™ (DMA2D)

The Chrom-Art Accelerator™ (DMA2D) is a graphic accelerator, which offers advanced bit
blitting, row data copy and pixel format conversion. It supports the following functions:
• Rectangle filling with a fixed color
• Rectangle copy
• Rectangle copy with pixel format conversion
• Rectangle composition with blending and pixel format conversion.
Various image format coding are supported, from indirect 4 bpp color mode up to 32 bpp
direct color. It embeds dedicated memory to store color lookup tables.
An interrupt can be generated when an operation is complete or at a programmed
watermark.
All the operations are fully automatized and are running independently from the CPU or the
DMAs.

3.12 Nested vectored interrupt controller (NVIC)

The devices embed a nested vectored interrupt controller able to manage 16 priority levels,
and handle up to 91 maskable interrupt channels plus the 16 interrupt lines of the Cortex®-
M4 with FPU core.
• Closely coupled NVIC gives low-latency interrupt processing
• Interrupt entry vector table address passed directly to the core
• Allows early processing of interrupts
• Processing of late arriving, higher-priority interrupts
• Support tail chaining
• Processor state automatically saved
• Interrupt entry restored on interrupt exit with no instruction overhead
This hardware block provides flexible interrupt management features with minimum interrupt
latency.

3.13 External interrupt/event controller (EXTI)

The external interrupt/event controller consists of 23 edge-detector lines used to generate
interrupt/event requests. Each line can be independently configured to select the trigger
event (rising edge, falling edge, both) and can be masked independently. A pending register
maintains the status of the interrupt requests. The EXTI can detect an external line with a
pulse width shorter than the Internal APB2 clock period. Up to 168 GPIOs can be connected
to the 16 external interrupt lines.

3.14 Clocks and startup

On reset the 16 MHz internal RC oscillator is selected as the default CPU clock. The
16 MHz internal RC oscillator is factory-trimmed to offer 1% accuracy over the full
temperature range. The application can then select as system clock either the RC oscillator
or an external 4-26 MHz clock source. This clock can be monitored for failure. If a failure is

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detected, the system automatically switches back to the internal RC oscillator and a
software interrupt is generated (if enabled). This clock source is input to a PLL thus allowing
to increase the frequency up to 180 MHz. Similarly, full interrupt management of the PLL
clock entry is available when necessary (for example if an indirectly used external oscillator
fails).
Several prescalers allow the configuration of the two AHB buses, the high-speed APB
(APB2) and the low-speed APB (APB1) domains. The maximum frequency of the two AHB
buses is 180 MHz while the maximum frequency of the high-speed APB domains is
90 MHz. The maximum allowed frequency of the low-speed APB domain is 45 MHz.
The devices embed a dedicated PLL (PLLI2S) and PLLSAI, which allows to achieve audio
class performance. In this case, the I2S master clock can generate all standard sampling
frequencies from 8 kHz to 192 kHz.

3.15 Boot modes

At startup, boot pins are used to select one out of three boot options:
• Boot from user flash
• Boot from system memory
• Boot from embedded SRAM
The bootloader is located in system memory. It is used to reprogram the flash memory
through a serial interface. Refer to application note AN2606 for details.

3.16 Power supply schemes

• VDD = 1.7 to 3.6 V: external power supply for I/Os and the internal regulator (when
enabled), provided externally through VDD pins.
• VSSA, VDDA = 1.7 to 3.6 V: external analog power supplies for ADC, DAC, reset blocks,
RCs, and PLL. VDDA and VSSA must be connected to VDD and VSS, respectively.
• VBAT = 1.65 to 3.6 V: power supply for RTC, external clock 32 kHz oscillator and
backup registers (through power switch) when VDD is not present.
Note: The VDD/VDDA minimum value of 1.7 V is obtained with the use of an external power supply
supervisor (refer to Section 3.17.2: Internal reset OFF). Refer to Table 3: Voltage regulator
configuration mode versus device operating mode to identify the packages supporting this
option.

3.17 Power supply supervisor

3.17.1 Internal reset ON

On packages embedding the PDR_ON pin, the power supply supervisor is enabled by
holding PDR_ON high. On the other package, the power supply supervisor is always
enabled.
The device has an integrated power-on reset (POR)/ power-down reset (PDR) circuitry
coupled with a brownout reset (BOR) circuitry. At power-on, POR/PDR is always active and
ensures proper operation starting from 1.8 V. After the 1.8 V POR threshold level is

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reached, the option byte loading process starts, either to confirm or modify default BOR
thresholds, or to disable BOR permanently. Three BOR thresholds are available through
option bytes. The device remains in reset mode when VDD is below a specified threshold,
VPOR/PDR, or VBOR, without the need for an external reset circuit.
The device also features an embedded programmable voltage detector (PVD) that monitors
the VDD/VDDA power supply and compares it to the VPVD threshold. An interrupt can be
generated when VDD/VDDA drops below the VPVD threshold and/or when VDD/VDDA is
higher than the VPVD threshold. The interrupt service routine can then generate a warning
message and/or put the MCU into a safe state. The PVD is enabled by software.

3.17.2 Internal reset OFF

This feature is available only on packages featuring the PDR_ON pin. The internal power-on
reset (POR) / power-down reset (PDR) circuitry is disabled through the PDR_ON pin.
An external power supply supervisor should monitor VDD and should maintain the device in
reset mode as long as VDD is below a specified threshold. PDR_ON should be connected to
this external power supply supervisor. Refer to Figure 6: Power supply supervisor
interconnection with internal reset OFF.

Figure 6. Power supply supervisor interconnection with internal reset OFF

VDD

External VDD power supply supervisor

Ext. reset controller active when

VDD < 1.7 V

PDR_ON
Application reset
NRST signal (optional)

VDD

MS31383V3

The VDD specified threshold, below which the device must be maintained under reset, is
1.7 V (see Figure 7).
A comprehensive set of power-saving mode allows to design low-power applications.
When the internal reset is OFF, the following integrated features are no more supported:
• The integrated power-on reset (POR) / power-down reset (PDR) circuitry is disabled
• The brownout reset (BOR) circuitry must be disabled
• The embedded programmable voltage detector (PVD) is disabled
• VBAT functionality is no more available and VBAT pin should be connected to VDD.
All packages, except for the LQFP100, allow to disable the internal reset through the
PDR_ON signal.

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Figure 7. PDR_ON control with internal reset OFF

V DD

PDR = 1.7 V

time

Reset by other source than

power supply supervisor

NRST

PDR_ON PDR_ON

time

MS19009V6

3.18 Voltage regulator

The regulator has four operating modes:
• Regulator ON
– Main regulator mode (MR)
– Low-power regulator (LPR)
– Power-down
• Regulator OFF

3.18.1 Regulator ON
On packages embedding the BYPASS_REG pin, the regulator is enabled by holding
BYPASS_REG low. On all other packages, the regulator is always enabled.
There are three power modes configured by software when the regulator is ON:
• MR mode used in Run/sleep modes or in Stop modes
– In Run/Sleep mode
The MR mode is used either in the normal mode (default mode) or the over-drive
mode (enabled by software). Different voltages scaling are provided to reach the
best compromise between maximum frequency and dynamic power consumption.

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The overdrive mode allows operating at a higher frequency than the normal mode
for a given voltage scaling.
– In Stop modes
The MR can be configured in two ways during stop mode:
MR operates in normal mode (default mode of MR in stop mode)
MR operates in underdrive mode (reduced leakage mode).
• LPR is used in the Stop modes:
The LP regulator mode is configured by software when entering Stop mode.
Like the MR mode, the LPR can be configured in two ways during stop mode:
– LPR operates in normal mode (default mode when LPR is ON)
– LPR operates in underdrive mode (reduced leakage mode).
• Power-down is used in Standby mode.
The Power-down mode is activated only when entering in Standby mode. The regulator
output is in high impedance and the kernel circuitry is powered down, inducing zero
consumption. The contents of the registers and SRAM are lost.
Refer to Table 3 for a summary of voltage regulator modes versus device operating modes.
Two external ceramic capacitors should be connected on VCAP_1 and VCAP_2 pin. Refer to
Figure 22: Power supply scheme and Table 19: VCAP1/VCAP2 operating conditions.
All packages have the regulator ON feature.

Table 3. Voltage regulator configuration mode versus device operating mode(1)

Voltage regulator
Run mode Sleep mode Stop mode Standby mode
configuration

Normal mode MR MR MR or LPR -

Over-drive
MR MR - -
mode(2)
Under-drive mode - - MR or LPR -
Power-down
- - - Yes
mode
1. ‘-’ means that the corresponding configuration is not available.
2. The over-drive mode is not available when VDD = 1.7 to 2.1 V.

3.18.2 Regulator OFF

This feature is available only on packages featuring the BYPASS_REG pin. The regulator is
disabled by holding BYPASS_REG high. The regulator OFF mode allows to supply
externally a V12 voltage source through VCAP_1 and VCAP_2 pins.
Since the internal voltage scaling is not managed internally, the external voltage value must
be aligned with the targeted maximum frequency. Refer to Table 17: General operating
conditions.The two 2.2 µF ceramic capacitors should be replaced by two 100 nF decoupling
capacitors. Refer to Figure 22: Power supply scheme.
When the regulator is OFF, there is no more internal monitoring on V12. An external power
supply supervisor should be used to monitor the V12 of the logic power domain. PA0 pin
should be used for this purpose, and act as a power-on reset on V12 power domain.

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In regulator OFF mode, the following features are no more supported:

• PA0 cannot be used as a GPIO pin since it allows to reset a part of the V12 logic power
domain, which is not reset by the NRST pin.
• As long as PA0 is kept low, the debug mode cannot be used under power-on reset. As
a consequence, PA0 and NRST pins must be managed separately if the debug
connection under reset or prereset is required.
• The overdrive and underdrive modes are not available.
• The Standby mode is not available.

Figure 8. Regulator OFF

V12
External VCAP_1/2 power
supply supervisor Application reset
Ext. reset controller active signal (optional)
when VCAP_1/2 < Min V12

VDD
PA0 NRST
VDD

BYPASS_REG
V12

VCAP_1

VCAP_2
ai18498V3

The following conditions must be respected:

• VDD should always be higher than VCAP_1 and VCAP_2 to avoid current injection
between power domains.
• If the time for VCAP_1 and VCAP_2 to reach V12 minimum value is faster than the time for
VDD to reach 1.7 V, then PA0 should be kept low to cover both conditions: until VCAP_1
and VCAP_2 reach V12 minimum value and until VDD reaches 1.7 V (see Figure 9).
• Otherwise, if the time for VCAP_1 and VCAP_2 to reach V12 minimum value is slower
than the time for VDD to reach 1.7 V, then PA0 could be asserted low externally (see
Figure 10).
• If VCAP_1 and VCAP_2 go below V12 minimum value and VDD is higher than 1.7 V, then a
reset must be asserted on PA0 pin.
Note: The minimum value of V12 depends on the maximum frequency targeted in the application
(see Table 17: General operating conditions).

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Figure 9. Startup in regulator OFF: slow VDD slope

- power-down reset risen after VCAP_1/VCAP_2 stabilization

VDD

PDR = 1.7 V or 1.8 V VCAP_1 / VCAP_2

V12
Min V12

time

NRST

time
ai18491f

1. This figure is valid whatever the internal reset mode (ON or OFF).

Figure 10. Startup in regulator OFF mode: fast VDD slope

- power-down reset risen before VCAP_1/VCAP_2 stabilization

VDD

PDR = 1.7 V or 1.8 V

VCAP_1 / VCAP_2
V12
Min V12

time
NRST
PA0 asserted externally

time
ai18492e

1. This figure is valid whatever the internal reset mode (ON or OFF).

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3.18.3 Regulator ON/OFF and internal reset ON/OFF availability

Table 4. Regulator ON/OFF and internal reset ON/OFF availability

Package Regulator ON Regulator OFF Internal reset ON Internal reset OFF

LQFP100 Yes No
Yes No
LQFP144,
LQFP208 Yes
Yes PDR_ON
WLCSP143,
LQFP176, Yes Yes PDR_ON set to connected to an
UFBGA169, BYPASS_REG set BYPASS_REG set VDD external power
UFBGA176, to VSS to VDD supply supervisor
TFBGA216

3.19 Real-time clock (RTC), backup SRAM, and backup registers

The backup domain includes:
• The real-time clock (RTC)
• 4 Kbytes of backup SRAM
• 20 backup registers
The real-time clock (RTC) is an independent BCD timer/counter. Dedicated registers contain
the second, minute, hour (in 12/24 hour), weekday, date, month, year, in BCD (binary-coded
decimal) format. Correction for 28, 29 (leap year), 30, and 31 day of the month are
performed automatically. The RTC provides a programmable alarm and programmable
periodic interrupts with wake-up from Stop and Standby modes. The subseconds value is
also available in binary format.
It is clocked by a 32.768 kHz external crystal, resonator or oscillator, the internal low-power
RC oscillator or the high-speed external clock divided by 128. The internal low-speed RC
has a typical frequency of 32 kHz. The RTC can be calibrated using an external 512 Hz
output to compensate for any natural quartz deviation.
Two alarm registers are used to generate an alarm at a specific time and calendar fields can
be independently masked for alarm comparison. To generate a periodic interrupt, a 16-bit
programmable binary autoreload downcounter with programmable resolution is available
and allows automatic wake-up and periodic alarms from every 120 µs to every 36 hours.
A 20-bit prescaler is used for the time base clock. It is by default configured to generate a
time base of 1 second from a clock at 32.768 kHz.
The 4-Kbyte backup SRAM is an EEPROM-like memory area. It can be used to store data,
which need to be retained in VBAT and standby mode. This memory area is disabled by
default to minimize power consumption (see Section 3.20: Low-power modes). It can be
enabled by software.
The backup registers are 32-bit registers used to store 80 bytes of user application data
when VDD power is not present. Backup registers are not reset by a system, a power reset,
or when the device wakes up from the Standby mode (see Section 3.20: Low-power
modes).

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Additional 32-bit registers contain the programmable alarm subseconds, seconds, minutes,
hours, day, and date.
Like backup SRAM, the RTC and backup registers are supplied through a switch that is
powered either from the VDD supply when present or from the VBAT pin.

3.20 Low-power modes

The devices support three low-power modes to achieve the best compromise between low-
power consumption, short startup time and available wake-up sources:
• Sleep mode
In Sleep mode, only the CPU is stopped. All peripherals continue to operate and can
wake up the CPU when an interrupt/event occurs.
• Stop mode
The Stop mode achieves the lowest power consumption while retaining the contents of
SRAM and registers. All clocks in the 1.2 V domain are stopped, the PLL, the HSI RC
and the HSE crystal oscillators are disabled.
The voltage regulator can be put either in main regulator mode (MR) or in low-power
mode (LPR). Both modes can be configured as follows (see Table 5: Voltage regulator
modes in stop mode):
– Normal mode (default mode when MR or LPR is enabled)
– Underdrive mode.
The device can be woken up from the Stop mode by any of the EXTI lines (the EXTI
line source can be one of the 16 external lines, the PVD output, the RTC alarm / wake-
up / tamper / time stamp events, the USB OTG FS/HS wake-up or the Ethernet wake-
up).

Table 5. Voltage regulator modes in stop mode

Voltage regulator
Main regulator (MR) Low-power regulator (LPR)
configuration

Normal mode MR ON LPR ON

Under-drive mode MR in under-drive mode LPR in under-drive mode

• Standby mode
The Standby mode is used to achieve the lowest power consumption. The internal
voltage regulator is switched off so that the entire 1.2 V domain is powered off. The
PLL, the HSI RC and the HSE crystal oscillators are also switched off. After entering
Standby mode, the SRAM and register contents are lost except for registers in the
backup domain and the backup SRAM when selected.
The device exits the Standby mode when an external reset (NRST pin), an IWDG reset,
a rising edge on the WKUP pin, or an RTC alarm / wake-up / tamper /time stamp event
occurs.
The standby mode is not supported when the embedded voltage regulator is bypassed,
and an external power controls the 1.2 V domain.

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3.21 VBAT operation

The VBAT pin allows to power the device VBAT domain from an external battery, an external
supercapacitor, or from VDD when no external battery and an external supercapacitor are
present.
VBAT operation is activated when VDD is not present.
The VBAT pin supplies the RTC, the backup registers, and the backup SRAM.
Note: When the microcontroller is supplied from VBAT, external interrupts and RTC alarm/events
do not exit it from VBAT operation.
When PDR_ON pin is not connected to VDD (Internal Reset OFF), the VBAT functionality is
no more available and VBAT pin should be connected to VDD.

3.22 Timers and watchdogs

The devices include two advanced-control timers, eight general-purpose timers, two basic
timers and two watchdog timers.
All timer counters can be frozen in debug mode.
Table 6 compares the features of the advanced-control, general-purpose and basic timers.

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Table 6. Timer feature comparison

Max
Max
DMA Capture/ timer
Timer Counter Counter Prescaler Complementary interface
Timer request compare clock
type resolution type factor output clock
generation channels (MHz)
(MHz) (1)

Any
Up, integer
Advanced TIM1,
16-bit Down, between 1 Yes 4 Yes 90 180
-control TIM8
Up/down and
65536
Any
Up, integer
TIM2,
32-bit Down, between 1 Yes 4 No 45 90/180
TIM5
Up/down and
65536
Any
Up, integer
TIM3,
16-bit Down, between 1 Yes 4 No 45 90/180
TIM4
Up/down and
65536
Any
integer
TIM9 16-bit Up between 1 No 2 No 90 180
and
General 65536
purpose Any
TIM10 integer
, 16-bit Up between 1 No 1 No 90 180
TIM11 and
65536
Any
integer
TIM12 16-bit Up between 1 No 2 No 45 90/180
and
65536
Any
TIM13 integer
, 16-bit Up between 1 No 1 No 45 90/180
TIM14 and
65536
Any
integer
TIM6,
Basic 16-bit Up between 1 Yes 0 No 45 90/180
TIM7
and
65536
1. The maximum timer clock is either 90 or 180 MHz depending on TIMPRE bit configuration in the RCC_DCKCFGR register.

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3.22.1 Advanced-control timers (TIM1, TIM8)

The advanced-control timers (TIM1, TIM8) can be seen as three-phase PWM generators
multiplexed on six channels. They have complementary PWM outputs with programmable
inserted dead times. They can also be considered as complete general-purpose timers.
Their four independent channels can be used for:
• Input capture
• Output compare
• PWM generation (edge- or center-aligned modes)
• One-pulse mode output
If configured as standard 16-bit timers, they have the same features as the general-purpose
TIMx timers. If configured as 16-bit PWM generators, they have full modulation capability (0-
100%).
The advanced-control timer can work together with the TIMx timers via the Timer Link
feature for synchronization or event chaining.
TIM1 and TIM8 support independent DMA request generation.

3.22.2 General-purpose timers (TIMx)

There are ten synchronizable general-purpose timers embedded in the STM32F42x devices
(see Table 6 for differences).
• TIM2, TIM3, TIM4, TIM5
The STM32F42x include 4 full-featured general-purpose timers: TIM2, TIM5, TIM3,
and TIM4. The TIM2 and TIM5 timers are based on a 32-bit autoreload
up/downcounter and a 16-bit prescaler. The TIM3 and TIM4 timers are based on a 16-
bit auto-reload up/downcounter and a 16-bit prescaler. They all feature 4 independent
channels for input capture/output compare, PWM, or one-pulse mode output. This
gives up to 16 input capture/output compare/PWMs on the largest packages.
The TIM2, TIM3, TIM4, TIM5 general-purpose timers can work together, or with the
other general-purpose timers and the advanced-control timers TIM1 and TIM8 via the
Timer Link feature for synchronization or event chaining.
Any of these general-purpose timers can be used to generate PWM outputs.
TIM2, TIM3, TIM4, TIM5 all have independent DMA request generation. They can
handle quadrature (incremental) encoder signals and the digital outputs from 1 to 4
hall-effect sensors.
• TIM9, TIM10, TIM11, TIM12, TIM13, and TIM14
These timers are based on a 16-bit auto-reload upcounter and a 16-bit prescaler.
TIM10, TIM11, TIM13, and TIM14 feature one independent channel, whereas TIM9
and TIM12 have two independent channels for input capture/output compare, PWM or
one-pulse mode output. They can be synchronized with the TIM2, TIM3, TIM4, TIM5
full-featured general-purpose timers. They can also be used as simple time bases.

3.22.3 Basic timers TIM6 and TIM7

These timers are mainly used for DAC trigger and waveform generation. They can also be
used as a generic 16-bit time base.
TIM6 and TIM7 support independent DMA request generation.

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3.22.4 Independent watchdog

The independent watchdog is based on a 12-bit downcounter and 8-bit prescaler. It is
clocked from an independent 32 kHz internal RC and as it operates independently from the
main clock, it can operate in Stop and Standby modes. It can be used either as a watchdog
to reset the device when a problem occurs, or as a free-running timer for application timeout
management. It is hardware- or software-configurable through the option bytes.

3.22.5 Window watchdog

The window watchdog is based on a 7-bit downcounter that can be set as free-running. It
can be used as a watchdog to reset the device when a problem occurs. It is clocked from
the main clock. It has an early warning interrupt capability and the counter can be frozen in
debug mode.

3.22.6 SysTick timer

This timer is dedicated to real-time operating systems, but could also be used as a standard
downcounter. It features:
• A 24-bit downcounter
• Autoreload capability
• Maskable system interrupt generation when the counter reaches 0
• Programmable clock source.

3.23 Inter-integrated circuit interface ( I2C)

Up to three I²C bus interfaces can operate in multimaster and slave modes. They can
support the standard (up to 100 kHz), and fast (up to 400 kHz) modes. They support the
7/10-bit addressing mode and the 7-bit dual addressing mode (as slave). A hardware CRC
generation/verification is embedded.
They can be served by DMA and they support SMBus 2.0/PMBus.
The devices also include programmable analog and digital noise filters (see Table 7).

Table 7. Comparison of I2C analog and digital filters

Analog filter Digital filter

Pulse width of Programmable length from 1 to 15

≥ 50 ns
suppressed spikes I2C peripheral clocks

3.24 Universal synchronous/asynchronous receiver transmitters

(USART)
The devices embed four universal synchronous/asynchronous receiver transmitters
(USART1, USART2, USART3, and USART6) and four universal asynchronous receiver
transmitters (UART4, UART5, UART7, and UART8).
These six interfaces provide asynchronous communication, IrDA SIR ENDEC support,
multiprocessor communication mode, single-wire half-duplex communication mode and
have LIN Master/Slave capability. The USART1 and USART6 interfaces are able to

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Functional overview STM32F427xx STM32F429xx

communicate at speeds of up to 11.25 Mbit/s. The other available interfaces communicate

at up to 5.62 bit/s.
USART1, USART2, USART3 and USART6 also provide hardware management of the CTS
and RTS signals, Smart Card mode (ISO 7816 compliant) and SPI-like communication
capability. All interfaces can be served by the DMA controller.

Table 8. USART feature comparison(1)

Max. baud Max. baud
USART Standard Modem SPI Smartcard rate in Mbit/s rate in Mbit/s APB
LIN irDA
name features (RTS/CTS) master (ISO 7816) (oversampling (oversampling mapping
by 16) by 8)

APB2
USART1 X X X X X X 5.62 11.25 (max.
90 MHz)
APB1
USART2 X X X X X X 2.81 5.62 (max.
45 MHz)
APB1
USART3 X X X X X X 2.81 5.62 (max.
45 MHz)
APB1
UART4 X - X - X - 2.81 5.62 (max.
45 MHz)
APB1
UART5 X - X - X - 2.81 5.62 (max.
45 MHz)
APB2
USART6 X X X X X X 5.62 11.25 (max.
90 MHz)
APB1
UART7 X - X - X - 2.81 5.62 (max.
45 MHz)
APB1
UART8 X - X - X - 2.81 5.62 (max.
45 MHz)
1. X = feature supported.

3.25 Serial peripheral interface (SPI)

The devices feature up to six SPIs in slave and master modes in full-duplex and simplex
communication modes. SPI1, SPI4, SPI5, and SPI6 can communicate at up to 45 Mbits/s,
SPI2 and SPI3 can communicate at up to 22.5 Mbit/s. The 3-bit prescaler gives 8 master
mode frequencies and the frame is configurable to 8 bits or 16 bits. The hardware CRC
generation/verification supports basic SD Card/MMC modes. All SPIs can be served by the
DMA controller.
The SPI interface can be configured to operate in TI mode for communications in master
mode and slave mode.

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3.26 Inter-integrated sound (I2S)

Two standard I2S interfaces (multiplexed with SPI2 and SPI3) are available. They can be
operated in master or slave mode, in full duplex and simplex communication modes, and
can be configured to operate with a 16-/32-bit resolution as an input or output channel.
Audio sampling frequencies from 8 kHz up to 192 kHz are supported. When either or both of
the I2S interfaces is/are configured in master mode, the master clock can be output to the
external DAC/CODEC at 256 times the sampling frequency.
All I2Sx can be served by the DMA controller.
Note: For I2S2 full-duplex mode, I2S2_CK and I2S2_WS signals can be used only on GPIO Port
B and GPIO Port D.

3.27 Serial Audio interface (SAI1)

The serial audio interface (SAI1) is based on two independent audio sub-blocks which can
operate as transmitter or receiver with their FIFO. Many audio protocols are supported by
each block: I2S standards, LSB or MSB-justified, PCM/DSP, TDM, AC’97 and SPDIF
output, supporting audio sampling frequencies from 8 kHz up to 192 kHz. Both sub-blocks
can be configured in master or in slave mode.
In master mode, the master clock can be output to the external DAC/CODEC at 256 times of
the sampling frequency.
The two sub-blocks can be configured in synchronous mode when full-duplex mode is
required.
SAI1 can be served by the DMA controller.

3.28 Audio PLL (PLLI2S)

The devices feature an additional dedicated PLL for audio I2S and SAI applications. It allows
to achieve error-free I2S sampling clock accuracy without compromising on the CPU
performance, while using USB peripherals.
The PLLI2S configuration can be modified to manage an I2S/SAI sample rate change
without disabling the main PLL (PLL) used for CPU, USB and Ethernet interfaces.
The audio PLL can be programmed with very low error to obtain sampling rates ranging
from 8 KHz to 192 KHz.
In addition to the audio PLL, a master clock input pin can be used to synchronize the
I2S/SAI flow with an external PLL (or Codec output).

3.29 Audio and LCD PLL(PLLSAI)

An additional PLL dedicated to audio and LCD-TFT is used for SAI1 peripheral in case the
PLLI2S is programmed to achieve another audio sampling frequency (49.152 MHz or
11.2896 MHz) and the audio application requires both sampling frequencies simultaneously.
The PLLSAI is also used to generate the LCD-TFT clock.

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Functional overview STM32F427xx STM32F429xx

3.30 Secure digital input/output interface (SDIO)

An SD/SDIO/MMC host interface is available, that supports MultiMediaCard System
Specification Version 4.2 in three different databus modes: 1-bit (default), 4-bit and 8-bit.
The interface allows data transfer at up to 48 MHz, and is compliant with the SD Memory
Card Specification Version 2.0.
The SDIO Card Specification Version 2.0 is also supported with two different databus
modes: 1-bit (default) and 4-bit.
The current version supports only one SD/SDIO/MMC4.2 card at any one time and a stack
of MMC4.1 or previous.
In addition to SD/SDIO/MMC, this interface is fully compliant with the CE-ATA digital
protocol Rev1.1.

3.31 Ethernet MAC interface with dedicated DMA and IEEE 1588
support
The devices provide an IEEE-802.3-2002-compliant media access controller (MAC) for
ethernet LAN communications through an industry-standard medium-independent interface
(MII) or a reduced medium-independent interface (RMII). The microcontroller requires an
external physical interface device (PHY) to connect to the physical LAN bus (twisted-pair,
fiber, etc.). The PHY is connected to the device MII port using 17 signals for MII or 9 signals
for RMII, and can be clocked using the 25 MHz (MII) from the microcontroller.
The devices include the following features:
• Supports 10 and 100 Mbit/s rates
• Dedicated DMA controller allowing high-speed transfers between the dedicated SRAM
and the descriptors (see the STM32F4xx reference manual for details)
• Tagged MAC frame support (VLAN support)
• Half-duplex (CSMA/CD) and full-duplex operation
• MAC control sublayer (control frames) support
• 32-bit CRC generation and removal
• Several address filtering modes for physical and multicast address (multicast and
group addresses)
• 32-bit status code for each transmitted or received frame
• Internal FIFOs to buffer transmit and receive frames. The transmit FIFO and the
receive FIFO are both 2 Kbytes.
• Supports hardware PTP (precision time protocol) in accordance with IEEE 1588 2008
(PTP V2) with the time stamp comparator connected to the TIM2 input
• Triggers interrupt when system time becomes greater than target time

3.32 Controller area network (bxCAN)

The two CANs are compliant with the 2.0A and B (active) specifications with a bitrate up to 1
Mbit/s. They can receive and transmit standard frames with 11-bit identifiers as well as
extended frames with 29-bit identifiers. Each CAN has three transmit mailboxes, two receive

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FIFOS with 3 stages and 28 shared scalable filter banks (all of them can be used even if one
CAN is used). 256 bytes of SRAM are allocated for each CAN.

3.33 Universal serial bus on-the-go full-speed (OTG_FS)

The devices embed an USB OTG full-speed device/host/OTG peripheral with integrated
transceivers. The USB OTG FS peripheral is compliant with the USB 2.0 specification and
with the OTG 1.0 specification. It has software-configurable endpoint setting and supports
suspend/resume. The USB OTG full-speed controller requires a dedicated 48 MHz clock
that is generated by a PLL connected to the HSE oscillator. The major features are:
• Combined Rx and Tx FIFO size of 320 × 35 bits with dynamic FIFO sizing
• Supports the session request protocol (SRP) and host negotiation protocol (HNP)
• 4 bidirectional endpoints
• 8 host channels with periodic OUT support
• HNP/SNP/IP inside (no need for any external resistor)
• For OTG/Host modes, a power switch is needed in case bus-powered devices are
connected

3.34 Universal serial bus on-the-go high-speed (OTG_HS)

The devices embed a USB OTG high-speed (up to 480 Mb/s) device/host/OTG peripheral.
The USB OTG HS supports both full-speed and high-speed operations. It integrates the
transceivers for full-speed operation (12 MB/s) and features a UTMI low-pin interface (ULPI)
for high-speed operation (480 MB/s). When using the USB OTG HS in HS mode, an
external PHY device connected to the ULPI is required.
The USB OTG HS peripheral is compliant with the USB 2.0 specification and with the OTG
1.0 specification. It has software-configurable endpoint setting and supports
suspend/resume. The USB OTG full-speed controller requires a dedicated 48 MHz clock
that is generated by a PLL connected to the HSE oscillator.
The major features are:
• Combined Rx and Tx FIFO size of 1 Kbit × 35 with dynamic FIFO sizing
• Supports the session request protocol (SRP) and host negotiation protocol (HNP)
• 6 bidirectional endpoints
• 12 host channels with periodic OUT support
• Internal FS OTG PHY support
• External HS or HS OTG operation supporting ULPI in SDR mode. The OTG PHY is
connected to the microcontroller ULPI port through 12 signals. It can be clocked using
the 60 MHz output.
• Internal USB DMA
• HNP/SNP/IP inside (no need for any external resistor)
• for OTG/Host modes, a power switch is needed in case bus-powered devices are
connected

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Functional overview STM32F427xx STM32F429xx

3.35 Digital camera interface (DCMI)

The devices embed a camera interface that can connect with camera modules and CMOS
sensors through an 8-bit to 14-bit parallel interface, to receive video data. The camera
interface can sustain a data transfer rate up to 54 Mbyte/s at 54 MHz. It features:
• Programmable polarity for the input pixel clock and synchronization signals
• Parallel data communication can be 8-, 10-, 12- or 14-bit
• Supports 8-bit progressive video monochrome or raw bayer format, YCbCr 4:2:2
progressive video, RGB 565 progressive video or compressed data (like JPEG)
• Supports continuous mode or snapshot (a single frame) mode
• Capability to automatically crop the image

3.36 True random number generator (RNG)

The RNG is a true random number generator that provides full entropy outputs to the
application as 32-bit samples. It is composed of a live entropy source (analog) and an
internal conditioning component.
All devices embed an RNG that delivers 32-bit random numbers generated by an integrated
analog circuit.

3.37 General-purpose input/outputs (GPIOs)

Each of the GPIO pins can be configured by software as output (push-pull or open-drain,
with or without pull-up or pull-down), as input (floating, with or without pull-up or pull-down)
or as peripheral alternate function. Most of the GPIO pins are shared with digital or analog
alternate functions. All GPIOs are high-current-capable and have speed selection to better
manage internal noise, power consumption and electromagnetic emission.
The I/O configuration can be locked if needed by following a specific sequence in order to
avoid spurious writing to the I/Os registers.
Fast I/O handling allowing maximum I/O toggling up to 90 MHz.

3.38 Analog-to-digital converters (ADCs)

Three 12-bit analog-to-digital converters are embedded and each ADC shares up to 16
external channels, performing conversions in the single-shot or scan mode. In scan mode,
automatic conversion is performed on a selected group of analog inputs.
Additional logic functions embedded in the ADC interface allow:
• Simultaneous sample and hold
• Interleaved sample and hold
The ADC can be served by the DMA controller. An analog watchdog feature allows very
precise monitoring of the converted voltage of one, some or all selected channels. An
interrupt is generated when the converted voltage is outside the programmed thresholds.
To synchronize A/D conversion and timers, the ADCs could be triggered by any of TIM1,
TIM2, TIM3, TIM4, TIM5, or TIM8 timer.

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3.39 Temperature sensor

The temperature sensor has to generate a voltage that varies linearly with temperature. The
conversion range is between 1.7 V and 3.6 V. The temperature sensor is internally
connected to the same input channel as VBAT, ADC1_IN18, which is used to convert the
sensor output voltage into a digital value. When the temperature sensor and VBAT
conversion are enabled at the same time, only VBAT conversion is performed.
As the offset of the temperature sensor varies from chip to chip due to process variation, the
internal temperature sensor is mainly suitable for applications that detect temperature
changes instead of absolute temperatures. If an accurate temperature reading is needed,
then an external temperature sensor part should be used.

3.40 Digital-to-analog converter (DAC)

The two 12-bit buffered DAC channels can be used to convert two digital signals into two
analog voltage signal outputs.
This dual digital Interface supports the following features:
• two DAC converters: one for each output channel
• 8-bit or 10-bit monotonic output
• left or right data alignment in 12-bit mode
• synchronized update capability
• noise-wave generation
• triangular-wave generation
• dual DAC channel independent or simultaneous conversions
• DMA capability for each channel
• external triggers for conversion
• input voltage reference VREF+
Eight DAC trigger inputs are used in the device. The DAC channels are triggered through
the timer update outputs that are also connected to different DMA streams.

3.41 Serial wire JTAG debug port (SWJ-DP)

The Arm SWJ-DP interface is embedded, and is a combined JTAG and serial wire debug
port that enables either a serial wire debug or a JTAG probe to be connected to the target.
Debug is performed using 2 pins only instead of 5 required by the JTAG (JTAG pins could
be re-use as GPIO with alternate function): the JTAG TMS and TCK pins are shared with
SWDIO and SWCLK, respectively, and a specific sequence on the TMS pin is used to
switch between JTAG-DP and SW-DP.

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Functional overview STM32F427xx STM32F429xx

3.42 Embedded Trace Macrocell™

The Arm Embedded Trace Macrocell provides a greater visibility of the instruction and data
flow inside the CPU core by streaming compressed data at a very high rate from the
STM32F42x through a small number of ETM pins to an external hardware trace port
analyzer (TPA) device. The TPA is connected to a host computer using USB, Ethernet, or
any other high-speed channel. Real-time instruction and data flow activity can be recorded
and then formatted for display on the host computer that runs the debugger software. TPA
hardware is commercially available from common development tool vendors.
The Embedded Trace Macrocell operates with third party debugger software tools.

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4 Pinouts and pin description

Figure 11. STM32F42x LQFP100 pinout

BOOT0

PC12

PC10
PC11

PA15
PA14
VDD
VSS

PD7
PD6
PD5
PD4
PD3
PD2
PD1
PD0
PE1
PE0
PB9
PB8

PB7
PB6
PB5
PB4
PB3
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
81
80
79
78
77
76
PE2 1 75 VDD
PE3 2 74 VSS
PE4 3 73 VCAP_2
PE5 4 72 PA13
PE6 5 71 PA12
VBAT 6 70 PA 11
PC13 7 69 PA10
PC14 8 68 PA9
PC15 9 67 PA8
VSS 10 66 PC9
VDD 11 65 PC8
PH0 12 64 PC7
PH1 13 LQFP100 63 PC6
NRST 14 62 PD15
PC0 15 61 PD14
PC1 16 60 PD13
PC2 17 59 PD12
PC3 18 58 PD11
VDD 19 57 PD10
VSSA 20 56 PD9
VREF+ 21 55 PD8
VDDA 22 54 PB15
PA0 23 53 PB14
PA1 24 52 PB13
PA2 25 51 PB12
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
VCAP_1
PA3

PA4
PA5
PA6
PA7
PC4
PC5

PE10

PE12
PE13
PE14
PE15
PB10
PB0
PB1
PB2
PE7
PE8
PE9
VSS
VDD

PE11

PB11

VDD

ai18495c

1. The above figure shows the package top view.

DS9405 Rev 11 45/240

85
Pinouts and pin description STM32F427xx STM32F429xx

Figure 12. STM32F42x WLCSP143 ballout

11 10 9 8 7 6 5 4 3 2 1

PDR
A _ON
PE1 PB8 PB6 PG15 PG12 PD7 PD5 PD2 PC10 VDD

B PE4 PE0 PB9 PB7 PB3 PG11 PD4 PD3 PD0 PC11 PA14

BOOT
VBAT PE3 PB5 PB4 PG10 VDD PD1 PC12 PA15 VDD
C 0

VCAP
D PC14 PC13 PE5 PE2 VDD PG13 PA10 PA11 PA13 VSS
_2

E PC15 VDD PF1 PE6 VSS VDD PG9 PC8 PC9 PA9 PA12

PF0 PF2 PF4 PF5 PF7 PG14 VSS PD6 PC7 PC6 PA8
F

G PF3 PF6 PF10 PF9 VDD PG5 PG4 PG6 PG3 PG8 VDD

H PF8 PH1 NRST PC0 VSS PD12 PD13 PD10 VSS VSS PG7

J PH0 PC2 PC3 VDD VDD VDD VDD PE10 PB15 PD14 PG2

K PC1 VSSA PA0 PA1 PB1 PF13 PG1 PE11 PB14 PD11 PD15

L VREF VDDA PA2 PA7 PB2 PF14 PE7 PE12 PE15 PD8 VDD
+

M PA3 PA4 PA5 PC4 PF11 PF15 PE8 PE14 PB10 PB12 PD9

BYPASS_ VCAP
N REG
PA6 PC5 PB0 PF12 PG0 PE9 PE13 PB11
_1
PB13

MS31855V2

1. The above figure shows the package bump view.

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STM32F427xx STM32F429xx Pinouts and pin description

Figure 13. STM32F42x LQFP144 pinout

PDR_ON

BOOT0

PG15

PG14
PG13
PG12
PG11
PG10

PC12
PC11
PC10
PA15
PA14
PG9
PD7
PD6

PD5
PD4
PD3
PD2
PD1
PD0
PE1
PE0
PB9
PB8

PB7
PB6
PB5
PB4
PB3
VDD

VDD

VDD
VSS

VSS
144
143
142
141
140
139
138
137
136
135
134
133
132
131
130
129
128
127
126
125
124
123
122
121

109
120
119
118
117
116
115
114
113
112

110
111
PE2 1 108 VDD
PE3 2 107 VSS
PE4 3 106 VCAP_2
PE5 4 105 PA13
PE6 5 104 PA12
VBAT 6 103 PA11
PC13 7 102 PA10
PC14 8 101 PA9
PC15 9 100 PA8
PF0 10 99 PC9
PF1 11 98 PC8
PF2 12 97 PC7
PF3 13 96 PC6
PF4 14 95 VDD
PF5 15 94 VSS
VSS 16 93 PG8
VDD 17 92 PG7
PF6 18 91 PG6
PF7 19 LQFP144 90 PG5
PF8 20 89 PG4
PF9 21 88 PG3
PF10 22 87 PG2
PH0 23 86 PD15
PH1 24 85 PD14
NRST 25 84 VDD
PC0 26 83 VSS
PC1 27 82 PD13
PC2 28 81 PD12
PC3 29 80 PD11
VDD 30 79 PD10
VSSA 31 78 PD9
VREF+ 32 77 PD8
VDDA 33 76 PB15
PA0 34 75 PB14
PA1 35 74 PB13
PA2 36 73 PB12
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60

72
61
62
63
64
65
66
67
68
69
70
71
VDD
VSS
PA3

PA4
PA5
PA6
PA7
PC4
PC5
PB0
PB1
PB2
PF11
PF12

PF13
PF14
PF15
PG0
PG1
PE7
PE8
PE9

PE10
PE11
PE12
PE13
PE14
PE15
PB10
PB11
VCAP_1
VDD

VDD

VDD
VSS
VSS

ai18496b

1. The above figure shows the package top view.

DS9405 Rev 11 47/240

85
Pinouts and pin description STM32F427xx STM32F429xx

Figure 14. STM32F42x LQFP176 pinout

PDR_ON

BOOT0

PG15

PG14
PG13
PG12

PG10

PC12

PC10
PG11

PC11

PA15
PA14
PG9
PD7
PD6

PD5
PD4
PD3
PD2
PD1
PD0
PE1
PE0
PB9
PB8

PB7
PB6
PB5
PB4
PB3

VDD

VDD

VDD
VSS

VSS

VSS
DD
PI7
PI6
PI5
PI4

PI3
PI2
V
176
175
174
173
172
171
170
169
168
167
166
165
164
163
162
161
160
159
158
157
156
155
154
153

141
140
152
151
150
149
148
147
146
145
144
143
142

139
138
137
136
135
134
133
PE2 1 132 PI1
PE3 2 131 PI0
PE4 3 130 PH15
PE5 4 129 PH14
PE6 5 128 PH13
VBAT 6 127 VDD
PI8 7 126 VSS
PC13 8 125 VCAP_2
PC14 9 124 PA13
PC15 10 123 PA12
PI9 11 122 PA11
PI10 12 121 PA10
PI11 13 120 PA9
VSS 14 119 PA8
VDD 15 118 PC9
PF0 16 117 PC8
PF1 17 116 PC7
PF2 18 115 PC6
PF3 19 114 VDD
PF4 20 113 VSS
PF5 21 112 PG8
22
LQFP176 111
VSS PG7
VDD 23 110 PG6
PF6 24 109 PG5
PF7 25 108 PG4
PF8 26 107 PG3
PF9 27 106 PG2
PF10 28 105 PD15
PH0 29 104 PD14
PH1 30 103 VDD
NRST 31 102 VSS
PC0 32 101 PD13
PC1 33 100 PD12
PC2 34 99 PD11
PC3 35 98 PD10
VDD 36 97 PD9
VSSA 37 96 PD8
VREF+ 38 95 PB15
VDDA 39 94 PB14
PA0 40 93 PB13
PA1 41 92 PB12
PA2 42 91 VDD
PH2 43 90 VSS
PH3 44 89 PH12
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68

80
69
70
71
72
73
74
75
76
77
78
79

88
81
82
83
84
85
86
87
VCAP_1
PC4
PC5

PH10
PF12

PF13
PF14
PF15
PG0
PG1
PH4
PH5

BYPASS_REG

PE10

PE12
PE13
PE14
PE15
PB10

PH6
PH7
PH8
PH9
PB0
PB1
PB2

PE7
PE8
PE9
VDD

VDD

VDD
VSS
VSS

PH11
PF11

PE11

PB11
PA3

PA4
PA5
PA6
PA7

VDD

MS31878V1

1. The above figure shows the package top view.

48/240 DS9405 Rev 11

 Figure 15. STM32F42x LQFP208 pinout

STM32F427xx STM32F429xx
PDR_ON

BOOT0

PG15

PG14
PG13
PG12

PG10

PC12

PC10
PG11

PC11

PA15
PA14
PJ15
PJ14
PJ13
PJ12
VDD

VDD

VDD

VDD
VSS

VSS

PG9

VSS
PD7
PD6

PD5
PD4
PD3
PD2
PD1
PD0
PE1
PE0
PB9
PB8

PB7
PB6
PB5
PB4
PB3

PK7
PK6
PK5
PK4
PK3
PI7
PI6
PI5
PI4

PI3
165

163
162
161
160
159
158
157
208
207
206
205
204
203
202
201
200
199
198
197
196
195
194
193
192
191
190
189
188
187
186
185
184
183
182
181
180
179
178
177
176
175
174
173
172
171
170
169
168
167
166

164
PE2 1 156 PI2
PE3 2 155 PI1
PE4 3 154 PI0
PE5 4 153 PH15
PE6 5 152 PH14
VBAT 6 151 PH13
PI8 7 150 VDD
PC13 8 149 VSS
PC14 9 148 VCAP2
PC15 10 147 PA13
PI9 11 146 PA12
PI10 12 145 PA11
PI11 13 144 PA10
VSS 14 143 PA9
VDD 15 142 PA8
PF0 16 141 PC9
PF1 17 140 PC8
PF2 18 139 PC7
PI12 19 138 PC6
PI13 20 137 VDD
PI14 21 136 VSS
PF3 22 135 PG8
DS9405 Rev 11

PF4 23 134 PG7

PF5 24 133 PG6
VSS 25 LQFP208 132 PG5
VDD 26 131 PG4
PF6 27 130 PG3
PF7 28 129 PG2
PF8 29 128 PK2
PF9 30 127 PK1
PF10 31 126 PK0
PH0 32 125 VSS
PH1 33 124 VDD
NRST 34 123 PJ11
PC0 35 122 PJ10
PC1 36 121 PJ9
PC2 37 120 PJ8
PC3 38 119 PJ7
VDD 39 118 PJ6
VSSA 40 117 PD15
VREF+ 41 116 PD14

Pinouts and pin description

VDDA 42 115 VDD
PA0 43 114 VSS
PA1 44 113 PD13
PA2 45 112 PD12
PH2 46 111 PD11
PH3 47 110 PD10
PH4 48 109 PD9
PH5 49 108 PD8
PA3 50 107 PB15
VSS 51 106 PB14
VDD 52 105 PB13

100
101
102
103
104
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
PA4
PA5
PA6
PA7
PC4
PC5
VDD
VSS
PB0
PB1
PB2
PI15
PJ0
PJ1
PJ2
PJ3
PJ4

PF12
VSS
VDD
PF13
PF14
PF15
PG0
PG1
PE7
PE8
PE9
VSS
VDD
PE10

PE12
PE13
PE14
PE15
PB10

VCAP1
VSS
VDD
PJ5
PH6
PH7
PH8
PH9
PH10

PH12
VDD
PB12
PF11

PE11

PB11

PH11
49/240

MS30422V2

1. The above figure shows the package top view.

Pinouts and pin description STM32F427xx STM32F429xx

Figure 16. STM32F42x UFBGA169 ballout

1 2 3 4 5 6 7 8 9 10 11 12 13

PI6 PI5 PE1 BOOT0 PB4 PG12 PD7 PD3 PC12 PA14 PI3
A

PI7 PE2 PI4 PE0 PB7 PB3 PG11 PD6 PD2 PC11 PA15 PI2 PI0
B

PE3 PE4 PDR PB9 PB6 PG10 PH15

PG15 PD5 PD1 PC10 PI1 PH14
C _ON

D PE5 PE6 PB8 PB5 VDD VSS PD4 PD0 VDD VSS VCAP PH13
VDD
_2

E PC14 PI9 PI10 PC13 VBAT VDD VSS PA9 PA10 PA11 PA12 PA13 PA8

F PC15 PF0 PF1 VDD VSS VSS VDD VDD PC6 PC7 PC8 PC9 PG8

G PH1 PH0 PF4 PF3 PF2 PC0 VDD VSS PG6 PG7 PG5
VSS VDD

PF10 NRST PF5 VDD PC1 PC2 VDD PE13 PD11 PD14 PG4 PG2
H PC3

J VSSA VREF- VREF+ VDDA PA0 VSS VSS PE8 PE14 VSS VDD PD15 PD12

K PA1 PA2 PA3 PA7 PB1 VDD PE9 PE15 PD13 PD9
PF14 PH9 PD10

L PH3 PH2 PH5 PC4 PB2 VDD PF15

PE10 PB10 PH8 PH12
PD8 PB15

BYPASS
M PH4 PA5 PC5 PF11 PF13 PG1 PE11 PB11 PH7 PH11 PB13 PB14
_REG

VCAP
PA4 PA6 PB0 PF12 PG0 PE7 PE12 PH6 PH10 PB12
N _1

MS33732V1

1. The above figure shows the package top view.

2. The 4 corners balls, A1, A13, N1 and N13, are not bonded internally and should be left not connected on the PCB.

50/240 DS9405 Rev 11

STM32F427xx STM32F429xx Pinouts and pin description

Figure 17. STM32F42x UFBGA176 ballout

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

A PE3 PE2 PE1 PE0 PB8 PB5 PG14 PG13 PB4 PB3 PD7 PC12 PA15 PA14 PA13

PE6 PB9 PB7 PB6 PG15 PG12 PG11 PG10 PD6 PD0 PC11 PC10 PA12
B PE4 PE5

VBAT PI7 PI6 PI5 VDD PDR_ON VDD VDD VDD PG9 PD5 PD1 PI3 PI2 PA11
C

D PC13 PI8 PI9 PI4 VSS BOOT0 VSS VSS VSS PD4 PD3 PD2 PH15 PI1 PA10

PC14 PF0 PI10 PI11 PH13 PH14 PI0 PA9

E

F PC15 VSS VDD PH2 VSS VSS VSS VSS VSS VSS VCAP2 PC9 PA8

PH0 VSS VDD PH3 VSS VSS VSS VSS VSS VSS VDD PC8 PC7
G

H PF2 PF1 PH4 VSS VSS VSS VSS VSS VSS VDD PG8 PC6
PH1

J NRST PF3 PF4 PH5 VSS VSS VSS VSS VSS VDD VDD PG7 PG6

K PF7 PF6 PF5 VDD VSS VSS VSS VSS VSS PH12 PG5 PG4 PG3

BYPASS_
L PF10 PF9 PF8 PH11 PH10 PD15 PG2
REG

M VSSA PC0 PC1 PC2 PC3 PB2 PG1 VSS VSS VCAP_1 PH6 PH8 PH9 PD14 PD13

N VREF- PA1 PA0 PA4 PC4 PF13 PG0 VDD VDD VDD PE13 PH7 PD12 PD11 PD10

P VREF+ PA2 PA6 PA5 PC5 PF12 PF15 PE8 PE9 PE11 PE14 PB12 PB13 PD9 PD8

PF14 PE7 PE10 PE12 PE15 PB10 PB11 PB14 PB15

R VDDA PA3 PA7 PB1 PB0 PF11

ai18497c

1. The above figure shows the package top view.

DS9405 Rev 11 51/240

85
Pinouts and pin description STM32F427xx STM32F429xx

Figure 18. STM32F42x TFBGA216 ballout

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

A PE4 PE3 PE2 PG14 PE1 PE0 PB8 PB5 PB4 PB3 PD7 PC12 PA15 PA14 PA13

B PE5 PE6 PG13 PB9 PB7 PB6 PG15 PG11 PJ13 PJ12 PD6 PD0 PC11 PC10 PA12

C VBAT PI8 PI4 PK7 PK6 PK5 PG12 PG10 PJ14 PD5 PD3 PD1 PI3 PI2 PA11

D PC13 PF0 PI5 PI7 PI10 PI6 PK4 PK3 PG9 PJ15 PD4 PD2 PH15 PI1 PA10

PDR_ BOOT0 VDD VDD VDD

E PC14 PF1 PI12 PI9 VDD VCAP2 PH13 PH14 PI0 PA9
ON

F PC15 VSS PI11 VDD VDD VSS VSS VSS VSS VSS VDD PK1 PK2 PC9 PA8

G PH0 PF2 PI13 PI15 VDD VSS VSS VDD PJ11 PK0 PC8 PC7

H PH1 PF3 PI14 PH4 VDD VSS VSS VDD PJ8 PJ10 PG8 PC6

J NRST PF4 PH5 PH3 VDD VSS VSS VDD PJ7 PJ9 PG7 PG6

K PF7 PF6 PF5 PH2 VDD VSS VSS VSS VSS VSS VDD PJ6 PD15 PB13 PD10

L BYPASS-
PF10 PF9 PF8 PC3 VSS VDD VDD VDD VDD VCAP1 PD14 PB12 PD9 PD8
REG

M VSSA PC0 PC1 PC2 PB2 PF12 PG1 PF15 PJ4 PD12 PD13 PG3 PG2 PJ5 PH12

N VREF- PA1 PA0 PA4 PC4 PF13 PG0 PJ3 PE8 PD11 PG5 PG4 PH7 PH9 PH11

P VREF+ PA2 PA6 PA5 PC5 PF14 PJ2 PF11 PE9 PE11 PE14 PB10 PH6 PH8 PH10

R VDDA PA3 PA7 PB1 PB0 PJ0 PJ1 PE7 PE10 PE12 PE15 PE13 PB11 PB14 PB15

MS30423V2

1. The above figure shows the package top view.

52/240 DS9405 Rev 11

STM32F427xx STM32F429xx Pinouts and pin description

Table 9. Legend/abbreviations used in the pinout table

Name Abbreviation Definition

Unless otherwise specified in brackets below the pin name, the pin function during and after
Pin name
reset is the same as the actual pin name
S Supply pin
Pin type I Input only pin
I/O Input / output pin
FT 5 V tolerant I/O
TTa 3.3 V tolerant I/O directly connected to ADC
I/O structure
B Dedicated BOOT0 pin
RST Bidirectional reset pin with weak pull-up resistor

Notes Unless otherwise specified by a note, all I/Os are set as floating inputs during and after reset

Alternate
Functions selected through GPIOx_AFR registers
functions

Additional
Functions directly selected/enabled through peripheral registers
functions

Table 10. STM32F427xx and STM32F429xx pin and ball definitions

Pin number
I / O structure
Pin type
UFBGA176(2)

Pin name
WLCSP143
UFBGA169

TFBGA216

Notes

Additional
LQFP100

LQFP144

LQFP176

LQFP208

(function after Alternate functions

functions
reset)(1)

TRACECLK,
SPI4_SCK,
1 1 B2 A2 1 D8 1 A3 PE2 I/O FT - SAI1_MCLK_A, -
ETH_MII_TXD3,
FMC_A23, EVENTOUT
TRACED0,
2 2 C1 A1 2 C10 2 A2 PE3 I/O FT - SAI1_SD_B, FMC_A19, -
EVENTOUT
TRACED1, SPI4_NSS,
SAI1_FS_A, FMC_A20,
3 3 C2 B1 3 B11 3 A1 PE4 I/O FT - -
DCMI_D4, LCD_B0,
EVENTOUT

DS9405 Rev 11 53/240

85
Pinouts and pin description STM32F427xx STM32F429xx

Table 10. STM32F427xx and STM32F429xx pin and ball definitions (continued)
Pin number

I / O structure
Pin type
UFBGA176(2)
Pin name

WLCSP143
UFBGA169

TFBGA216

Notes
Additional
LQFP100

LQFP144

LQFP176

LQFP208
(function after Alternate functions
functions
reset)(1)

TRACED2, TIM9_CH1,
SPI4_MISO,
4 4 D1 B2 4 D9 4 B1 PE5 I/O FT - SAI1_SCK_A, -
FMC_A21, DCMI_D6,
LCD_G0, EVENTOUT
TRACED3, TIM9_CH2,
SPI4_MOSI,
5 5 D2 B3 5 E8 5 B2 PE6 I/O FT - SAI1_SD_A, FMC_A22, -
DCMI_D7, LCD_G1,
EVENTOUT
- - - - - - - G6 VSS S - - - -
- - - - - - - F5 VDD S - - - -
6 6 E5 C1 6 C11 6 C1 VBAT S - - - -
(4)
NC
- - (3) D2 7 - 7 C2 PI8 I/O FT (5) EVENTOUT TAMP_2

(4)
7 7 E4 D1 8 D10 8 D1 PC13 I/O FT (5) EVENTOUT TAMP_1

PC14- (4)
OSC32_IN OSC32_IN
8 8 E1 E1 9 D11 9 E1 I/O FT (5) EVENTOUT (6)
(PC14)
PC15- (4)
OSC32_
9 9 F1 F1 10 E11 10 F1 OSC32_OUT I/O FT (5) EVENTOUT
OUT(6)
(PC15)
- - - - - - - G5 VDD S - - - -
CAN1_RX, FMC_D30,
- - E2 D3 11 - 11 E4 PI9 I/O FT - LCD_VSYNC, -
EVENTOUT
ETH_MII_RX_ER,
FMC_D31,
- - E3 E3 12 - 12 D5 PI10 I/O FT - -
LCD_HSYNC,
EVENTOUT
NC OTG_HS_ULPI_DIR,
- - (3) E4 13 - 13 F3 PI11 I/O FT - -
EVENTOUT
- - F6 F2 14 E7 14 F2 VSS S - - - -

54/240 DS9405 Rev 11

STM32F427xx STM32F429xx Pinouts and pin description

Table 10. STM32F427xx and STM32F429xx pin and ball definitions (continued)
Pin number

I / O structure
Pin type
UFBGA176(2)
Pin name

WLCSP143
UFBGA169

TFBGA216

Notes
Additional
LQFP100

LQFP144

LQFP176

LQFP208
(function after Alternate functions
functions
reset)(1)

- - F4 F3 15 E10 15 F4 VDD S - - - -
I2C2_SDA, FMC_A0,
- 10 F2 E2 16 F11 16 D2 PF0 I/O FT - -
EVENTOUT
I2C2_SCL, FMC_A1,
- 11 F3 H3 17 E9 17 E2 PF1 I/O FT - -
EVENTOUT
I2C2_SMBA, FMC_A2,
- 12 G5 H2 18 F10 18 G2 PF2 I/O FT - -
EVENTOUT
LCD_HSYNC,
- - - - - - 19 E3 PI12 I/O FT - -
EVENTOUT
LCD_VSYNC,
- - - - - - 20 G3 PI13 I/O FT - -
EVENTOUT
- - - - - - 21 H3 PI14 I/O FT LCD_CLK, EVENTOUT -
- 13 G4 J2 19 G11 22 H2 PF3 I/O FT (6) FMC_A3, EVENTOUT ADC3_IN9
ADC3_
- 14 G3 J3 20 F9 23 J2 PF4 I/O FT (6) FMC_A4, EVENTOUT
IN14
ADC3_
- 15 H3 K3 21 F8 24 K3 PF5 I/O FT (6) FMC_A5, EVENTOUT
IN15
10 16 G7 G2 22 H7 25 H6 VSS S - - - -
11 17 G8 G3 23 - 26 H5 VDD S - - - -
TIM10_CH1,
SPI5_NSS,
NC SAI1_SD_B,
- 18 (3) K2 24 G10 27 K2 PF6 I/O FT (6) ADC3_IN4
UART7_Rx,
FMC_NIORD,
EVENTOUT
TIM11_CH1,
SPI5_SCK,
NC SAI1_MCLK_B,
- 19 (3) K1 25 F7 28 K1 PF7 I/O FT (6) ADC3_IN5
UART7_Tx,
FMC_NREG,
EVENTOUT

DS9405 Rev 11 55/240

85
Pinouts and pin description STM32F427xx STM32F429xx

Table 10. STM32F427xx and STM32F429xx pin and ball definitions (continued)
Pin number

I / O structure
Pin type
UFBGA176(2)
Pin name

WLCSP143
UFBGA169

TFBGA216

Notes
Additional
LQFP100

LQFP144

LQFP176

LQFP208
(function after Alternate functions
functions
reset)(1)

SPI5_MISO,
SAI1_SCK_B,
NC
- 20 (3) L3 26 H11 29 L3 PF8 I/O FT (6) TIM13_CH1, ADC3_IN6
FMC_NIOWR,
EVENTOUT
SPI5_MOSI,
NC SAI1_FS_B,
- 21 (3) L2 27 G8 30 L2 PF9 I/O FT (6) ADC3_IN7
TIM14_CH1, FMC_CD,
EVENTOUT
FMC_INTR,
- 22 H1 L1 28 G9 31 L1 PF10 I/O FT (6) DCMI_D11, LCD_DE, ADC3_IN8
EVENTOUT
PH0-OSC_IN
12 23 G2 G1 29 J11 32 G1 I/O FT - EVENTOUT OSC_IN(6)
(PH0)
PH1-
OSC_OUT OSC_OUT
13 24 G1 H1 30 H10 33 H1 I/O FT - EVENTOUT (6)
(PH1)
RS
14 25 H2 J1 31 H9 34 J1 NRST I/O - - -
T
OTG_HS_ULPI_STP,
ADC123_
15 26 G6 M2 32 H8 35 M2 PC0 I/O FT (6) FMC_SDNWE,
IN10
EVENTOUT
ETH_MDC, ADC123_
16 27 H5 M3 33 K11 36 M3 PC1 I/O FT (6)
EVENTOUT IN11
SPI2_MISO,
I2S2ext_SD,
OTG_HS_ULPI_DIR, ADC123_
17 28 H6 M4 34 J10 37 M4 PC2 I/O FT (6)
ETH_MII_TXD2, IN12
FMC_SDNE0,
EVENTOUT
SPI2_MOSI/I2S2_SD,
OTG_HS_ULPI_NXT,
ADC123_
18 29 H7 M5 35 J9 38 L4 PC3 I/O FT (6) ETH_MII_TX_CLK,
IN13
FMC_SDCKE0,
EVENTOUT
19 30 - - 36 G7 39 J5 VDD S - - - -

56/240 DS9405 Rev 11

STM32F427xx STM32F429xx Pinouts and pin description

Table 10. STM32F427xx and STM32F429xx pin and ball definitions (continued)
Pin number

I / O structure
Pin type
UFBGA176(2)
Pin name

WLCSP143
UFBGA169

TFBGA216

Notes
Additional
LQFP100

LQFP144

LQFP176

LQFP208
(function after Alternate functions
functions
reset)(1)

- - - - - - - J6 VSS S - - - -
20 31 J1 M1 37 K10 40 M1 VSSA S - - - -
- - J2 N1 - - - N1 VREF– S - - - -
21 32 J3 P1 38 L11 41 P1 VREF+ S - - - -
22 33 J4 R1 39 L10 42 R1 VDDA S - - - -
TIM2_CH1/TIM2_ETR,
TIM5_CH1, TIM8_ETR,
PA0-WKUP ADC123_
USART2_CTS,
23 34 J5 N3 40 K9 43 N3 I/O FT (7) IN0/WKUP
(PA0) UART4_TX, (6)
ETH_MII_CRS,
EVENTOUT
TIM2_CH2, TIM5_CH2,
USART2_RTS,
(6) UART4_RX, ADC123_
24 35 K1 N2 41 K8 44 N2 PA1 I/O FT
ETH_MII_RX_CLK/ETH IN1
_RMII_REF_CLK,
EVENTOUT
TIM2_CH3, TIM5_CH3,
TIM9_CH1,
ADC123_
25 36 K2 P2 42 L9 45 P2 PA2 I/O FT (6) USART2_TX,
IN2
ETH_MDIO,
EVENTOUT
ETH_MII_CRS,
- - L2 F4 43 - 46 K4 PH2 I/O FT - FMC_SDCKE0, -
LCD_R0, EVENTOUT
ETH_MII_COL,
- - L1 G4 44 - 47 J4 PH3 I/O FT - FMC_SDNE0, LCD_R1, -
EVENTOUT
I2C2_SCL,
- - M2 H4 45 - 48 H4 PH4 I/O FT - OTG_HS_ULPI_NXT, -
EVENTOUT
I2C2_SDA, SPI5_NSS,
- - L3 J4 46 - 49 J3 PH5 I/O FT - FMC_SDNWE, -
EVENTOUT

DS9405 Rev 11 57/240

85
Pinouts and pin description STM32F427xx STM32F429xx

Table 10. STM32F427xx and STM32F429xx pin and ball definitions (continued)
Pin number

I / O structure
Pin type
UFBGA176(2)
Pin name

WLCSP143
UFBGA169

TFBGA216

Notes
Additional
LQFP100

LQFP144

LQFP176

LQFP208
(function after Alternate functions
functions
reset)(1)

TIM2_CH4, TIM5_CH4,
TIM9_CH2,
(6) USART2_RX, ADC123_
26 37 K3 R2 47 M11 50 R2 PA3 I/O FT
OTG_HS_ULPI_D0, IN3
ETH_MII_COL,
LCD_B5, EVENTOUT
27 38 - - - 51 K6 VSS S - - - -
BYPASS_
- - M1 L4 48 N11 - L5 I FT - - -
REG
28 39 J11 K4 49 J8 52 K5 VDD S - - - -
SPI1_NSS,
SPI3_NSS/I2S3_WS,
USART2_CK, ADC12_
29 40 N2 N4 50 M10 53 N4 PA4 I/O TTa (6) OTG_HS_SOF, IN4 /DAC_
DCMI_HSYNC, OUT1
LCD_VSYNC,
EVENTOUT
TIM2_CH1/TIM2_ETR,
TIM8_CH1N, ADC12_
30 41 M3 P4 51 M9 54 P4 PA5 I/O TTa (6) SPI1_SCK, IN5/DAC_
OTG_HS_ULPI_CK, OUT2
EVENTOUT
TIM1_BKIN,
TIM3_CH1,
TIM8_BKIN,
ADC12_
31 42 N3 P3 52 N10 55 P3 PA6 I/O FT (6) SPI1_MISO,
IN6
TIM13_CH1,
DCMI_PIXCLK,
LCD_G2, EVENTOUT
TIM1_CH1N,
TIM3_CH2,
TIM8_CH1N,
SPI1_MOSI, ADC12_
32 43 K4 R3 53 L8 56 R3 PA7 I/O FT (6)
TIM14_CH1, IN7
ETH_MII_RX_DV/ETH_
RMII_CRS_DV,
EVENTOUT

58/240 DS9405 Rev 11

STM32F427xx STM32F429xx Pinouts and pin description

Table 10. STM32F427xx and STM32F429xx pin and ball definitions (continued)
Pin number

I / O structure
Pin type
UFBGA176(2)
Pin name

WLCSP143
UFBGA169

TFBGA216

Notes
Additional
LQFP100

LQFP144

LQFP176

LQFP208
(function after Alternate functions
functions
reset)(1)

ETH_MII_RXD0/ETH_
ADC12_
33 44 L4 N5 54 M8 57 N5 PC4 I/O FT (6) RMII_RXD0,
IN14
EVENTOUT
ETH_MII_RXD1/ETH_
ADC12_
34 45 M4 P5 55 N9 58 P5 PC5 I/O FT (6) RMII_RXD1,
IN15
EVENTOUT
- - - - - J7 59 L7 VDD S - - - -
- - - - - - 60 L6 VSS S - - - -
TIM1_CH2N,
TIM3_CH3,
(6) TIM8_CH2N, LCD_R3, ADC12_
35 46 N4 R5 56 N8 61 R5 PB0 I/O FT
OTG_HS_ULPI_D1, IN8
ETH_MII_RXD2,
EVENTOUT
TIM1_CH3N,
TIM3_CH4,
(6) TIM8_CH3N, LCD_R6, ADC12_
36 47 K5 R4 57 K7 62 R4 PB1 I/O FT
OTG_HS_ULPI_D2, IN9
ETH_MII_RXD3,
EVENTOUT
PB2-BOOT1
37 48 L5 M6 58 L7 63 M5 I/O FT - EVENTOUT -
(PB2)
- - - - - - 64 G4 PI15 I/O FT - LCD_R0, EVENTOUT -
- - - - - - 65 R6 PJ0 I/O FT - LCD_R1, EVENTOUT -
- - - - - - 66 R7 PJ1 I/O FT - LCD_R2, EVENTOUT -
- - - - - - 67 P7 PJ2 I/O FT - LCD_R3, EVENTOUT -
- - - - - - 68 N8 PJ3 I/O FT - LCD_R4, EVENTOUT -
- - - - - - 69 M9 PJ4 I/O FT - LCD_R5, EVENTOUT -
SPI5_MOSI,
FMC_SDNRAS,
- 49 M5 R6 59 M7 70 P8 PF11 I/O FT - -
DCMI_D12,
EVENTOUT
- 50 N5 P6 60 N7 71 M6 PF12 I/O FT - FMC_A6, EVENTOUT -
- 51 G9 M8 61 - 72 K7 VSS S - - -

DS9405 Rev 11 59/240

85
Pinouts and pin description STM32F427xx STM32F429xx

Table 10. STM32F427xx and STM32F429xx pin and ball definitions (continued)
Pin number

I / O structure
Pin type
UFBGA176(2)
Pin name

WLCSP143
UFBGA169

TFBGA216

Notes
Additional
LQFP100

LQFP144

LQFP176

LQFP208
(function after Alternate functions
functions
reset)(1)

- 52 D10 N8 62 - 73 L8 VDD S - - -
- 53 M6 N6 63 K6 74 N6 PF13 I/O FT - FMC_A7, EVENTOUT -
- 54 K7 R7 64 L6 75 P6 PF14 I/O FT - FMC_A8, EVENTOUT -
- 55 L7 P7 65 M6 76 M8 PF15 I/O FT - FMC_A9, EVENTOUT -
- 56 N6 N7 66 N6 77 N7 PG0 I/O FT - FMC_A10, EVENTOUT -
- 57 M7 M7 67 K5 78 M7 PG1 I/O FT - FMC_A11, EVENTOUT -
TIM1_ETR, UART7_Rx,
38 58 N7 R8 68 L5 79 R8 PE7 I/O FT - -
FMC_D4, EVENTOUT
TIM1_CH1N,
39 59 J8 P8 69 M5 80 N9 PE8 I/O FT - UART7_Tx, FMC_D5, -
EVENTOUT
TIM1_CH1, FMC_D6,
40 60 K8 P9 70 N5 81 P9 PE9 I/O FT - -
EVENTOUT
- 61 J6 M9 71 H3 82 K8 VSS S - - -
- 62 G10 N9 72 J5 83 L9 VDD S - - -
TIM1_CH2N, FMC_D7,
41 63 L8 R9 73 J4 84 R9 PE10 I/O FT - -
EVENTOUT
TIM1_CH2, SPI4_NSS,
42 64 M8 P10 74 K4 85 P10 PE11 I/O FT - FMC_D8, LCD_G3, -
EVENTOUT
TIM1_CH3N,
43 65 N8 R10 75 L4 86 R10 PE12 I/O FT - SPI4_SCK, FMC_D9, -
LCD_B4, EVENTOUT
TIM1_CH3,
44 66 H9 N11 76 N4 87 R12 PE13 I/O FT - SPI4_MISO, FMC_D10, -
LCD_DE, EVENTOUT
TIM1_CH4,
45 67 J9 P11 77 M4 88 P11 PE14 I/O FT - SPI4_MOSI, FMC_D11, -
LCD_CLK, EVENTOUT
TIM1_BKIN, FMC_D12,
46 68 K9 R11 78 L3 89 R11 PE15 I/O FT - -
LCD_R7, EVENTOUT

60/240 DS9405 Rev 11

STM32F427xx STM32F429xx Pinouts and pin description

Table 10. STM32F427xx and STM32F429xx pin and ball definitions (continued)
Pin number

I / O structure
Pin type
UFBGA176(2)
Pin name

WLCSP143
UFBGA169

TFBGA216

Notes
Additional
LQFP100

LQFP144

LQFP176

LQFP208
(function after Alternate functions
functions
reset)(1)

TIM2_CH3, I2C2_SCL,
SPI2_SCK/I2S2_CK,
USART3_TX,
47 69 L9 R12 79 M3 90 P12 PB10 I/O FT - -
OTG_HS_ULPI_D3,
ETH_MII_RX_ER,
LCD_G4, EVENTOUT
TIM2_CH4, I2C2_SDA,
USART3_RX,
OTG_HS_ULPI_D4,
48 70 M9 R13 80 N3 91 R13 PB11 I/O FT - -
ETH_MII_TX_EN/ETH_
RMII_TX_EN, LCD_G5,
EVENTOUT
49 71 N9 M10 81 N2 92 L11 VCAP_1 S - - - -
- - - - - H2 93 K9 VSS S - - - -
50 72 F8 N10 82 J6 94 L10 VDD S - - - -
- - - - - - 95 M14 PJ5 I/O - - LCD_R6, EVENTOUT -
I2C2_SMBA,
SPI5_SCK,
TIM12_CH1,
- - N10 M11 83 - 96 P13 PH6 I/O FT - -
ETH_MII_RXD2,
FMC_SDNE1,
DCMI_D8, EVENTOUT
I2C3_SCL, SPI5_MISO,
ETH_MII_RXD3,
- - M10 N12 84 - 97 N13 PH7 I/O FT - -
FMC_SDCKE1,
DCMI_D9, EVENTOUT
I2C3_SDA, FMC_D16,
- - L10 M12 85 - 98 P14 PH8 I/O FT - DCMI_HSYNC, -
LCD_R2, EVENTOUT
I2C3_SMBA,
TIM12_CH2,
- - K10 M13 86 - 99 N14 PH9 I/O FT - -
FMC_D17, DCMI_D0,
LCD_R3, EVENTOUT
TIM5_CH1, FMC_D18,
- - N11 L13 87 - 100 P15 PH10 I/O FT - DCMI_D1, LCD_R4, -
EVENTOUT

DS9405 Rev 11 61/240

85
Pinouts and pin description STM32F427xx STM32F429xx

Table 10. STM32F427xx and STM32F429xx pin and ball definitions (continued)
Pin number

I / O structure
Pin type
UFBGA176(2)
Pin name

WLCSP143
UFBGA169

TFBGA216

Notes
Additional
LQFP100

LQFP144

LQFP176

LQFP208
(function after Alternate functions
functions
reset)(1)

TIM5_CH2, FMC_D19,
- - M11 L12 88 - 101 N15 PH11 I/O FT - DCMI_D2, LCD_R5, -
EVENTOUT
TIM5_CH3, FMC_D20,
- - L11 K12 89 - 102 M15 PH12 I/O FT - DCMI_D3, LCD_R6, -
EVENTOUT
- - E7 H12 90 - - K10 VSS S - - - -
- - H8 J12 91 - 103 K11 VDD S - - - -
TIM1_BKIN,
I2C2_SMBA,
SPI2_NSS/I2S2_WS,
USART3_CK,
CAN2_RX,
51 73 N12 P12 92 M2 104 L13 PB12 I/O FT - -
OTG_HS_ULPI_D5,
ETH_MII_TXD0/ETH_R
MII_TXD0,
OTG_HS_ID,
EVENTOUT
TIM1_CH1N,
SPI2_SCK/I2S2_CK,
USART3_CTS,
OTG_HS_
52 74 M12 P13 93 N1 105 K14 PB13 I/O FT - CAN2_TX,
VBUS
OTG_HS_ULPI_D6,
ETH_MII_TXD1/ETH_R
MII_TXD1, EVENTOUT
TIM1_CH2N,
TIM8_CH2N,
SPI2_MISO,
I2S2ext_SD,
53 75 M13 R14 94 K3 106 R14 PB14 I/O FT - -
USART3_RTS,
TIM12_CH1,
OTG_HS_DM,
EVENTOUT

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STM32F427xx STM32F429xx Pinouts and pin description

Table 10. STM32F427xx and STM32F429xx pin and ball definitions (continued)
Pin number

I / O structure
Pin type
UFBGA176(2)
Pin name

WLCSP143
UFBGA169

TFBGA216

Notes
Additional
LQFP100

LQFP144

LQFP176

LQFP208
(function after Alternate functions
functions
reset)(1)

RTC_REFIN,
TIM1_CH3N,
TIM8_CH3N,
54 76 L13 R15 95 J3 107 R15 PB15 I/O FT - SPI2_MOSI/I2S2_SD, -
TIM12_CH2,
OTG_HS_DP,
EVENTOUT
USART3_TX,
55 77 L12 P15 96 L2 108 L15 PD8 I/O FT - -
FMC_D13, EVENTOUT
USART3_RX,
56 78 K13 P14 97 M1 109 L14 PD9 I/O FT - -
FMC_D14, EVENTOUT
USART3_CK,
57 79 K11 N15 98 H4 110 K15 PD10 I/O FT - FMC_D15, LCD_B3, -
EVENTOUT
USART3_CTS,
58 80 H10 N14 99 K2 111 N10 PD11 I/O FT - -
FMC_A16, EVENTOUT
TIM4_CH1,
59 81 J13 N13 100 H6 112 M10 PD12 I/O FT - USART3_RTS, -
FMC_A17, EVENTOUT
TIM4_CH2, FMC_A18,
60 82 K12 M15 101 H5 113 M11 PD13 I/O FT - -
EVENTOUT
- 83 - - 102 - 114 J10 VSS S - - -
- 84 F7 J13 103 L1 115 J11 VDD S - - -
TIM4_CH3, FMC_D0,
61 85 H11 M14 104 J2 116 L12 PD14 I/O FT - -
EVENTOUT
TIM4_CH4, FMC_D1,
62 86 J12 L14 105 K1 117 K13 PD15 I/O FT - -
EVENTOUT
- - - - - - 118 K12 PJ6 I/O FT - LCD_R7, EVENTOUT -
- - - - - - 119 J12 PJ7 I/O FT - LCD_G0, EVENTOUT -
- - - - - - 120 H12 PJ8 I/O FT - LCD_G1, EVENTOUT -
- - - - - - 121 J13 PJ9 I/O FT - LCD_G2, EVENTOUT -
- - - - - - 122 H13 PJ10 I/O FT - LCD_G3, EVENTOUT -
- - - - - - 123 G12 PJ11 I/O FT - LCD_G4, EVENTOUT -

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85
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Table 10. STM32F427xx and STM32F429xx pin and ball definitions (continued)
Pin number

I / O structure
Pin type
UFBGA176(2)
Pin name

WLCSP143
UFBGA169

TFBGA216

Notes
Additional
LQFP100

LQFP144

LQFP176

LQFP208
(function after Alternate functions
functions
reset)(1)

- - - - - - 124 H11 VDD I/O FT - - -

- - - - - - 125 H10 VSS I/O FT - - -
- - - - - - 126 G13 PK0 I/O FT - LCD_G5, EVENTOUT -
- - - - - - 127 F12 PK1 I/O FT - LCD_G6, EVENTOUT -
- - - - - - 128 F13 PK2 I/O FT - LCD_G7, EVENTOUT -
- 87 H13 L15 106 J1 129 M13 PG2 I/O FT - FMC_A12, EVENTOUT -
NC
- 88 (3) K15 107 G3 130 M12 PG3 I/O FT - FMC_A13, EVENTOUT -

FMC_A14/FMC_BA0,
- 89 H12 K14 108 G5 131 N12 PG4 I/O FT - -
EVENTOUT
FMC_A15/FMC_BA1,
- 90 G13 K13 109 G6 132 N11 PG5 I/O FT - -
EVENTOUT
FMC_INT2, DCMI_D12,
- 91 G11 J15 110 G4 133 J15 PG6 I/O FT - -
LCD_R7, EVENTOUT
USART6_CK,
- 92 G12 J14 111 H1 134 J14 PG7 I/O FT - FMC_INT3, DCMI_D13, -
LCD_CLK, EVENTOUT
SPI6_NSS,
USART6_RTS,
- 93 F13 H14 112 G2 135 H14 PG8 I/O FT - ETH_PPS_OUT, -
FMC_SDCLK,
EVENTOUT
- 94 J7 G12 113 D2 136 G10 VSS S - - -
- 95 E6 H13 114 G1 137 G11 VDD S - - -
TIM3_CH1, TIM8_CH1,
I2S2_MCK,
USART6_TX,
63 96 F9 H15 115 F2 138 H15 PC6 I/O FT - -
SDIO_D6, DCMI_D0,
LCD_HSYNC,
EVENTOUT

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STM32F427xx STM32F429xx Pinouts and pin description

Table 10. STM32F427xx and STM32F429xx pin and ball definitions (continued)
Pin number

I / O structure
Pin type
UFBGA176(2)
Pin name

WLCSP143
UFBGA169

TFBGA216

Notes
Additional
LQFP100

LQFP144

LQFP176

LQFP208
(function after Alternate functions
functions
reset)(1)

TIM3_CH2, TIM8_CH2,
I2S3_MCK,
64 97 F10 G15 116 F3 139 G15 PC7 I/O FT - USART6_RX, -
SDIO_D7, DCMI_D1,
LCD_G6, EVENTOUT
TIM3_CH3, TIM8_CH3,
USART6_CK,
65 98 F11 G14 117 E4 140 G14 PC8 I/O FT - -
SDIO_D0, DCMI_D2,
EVENTOUT
MCO2, TIM3_CH4,
TIM8_CH4, I2C3_SDA,
66 99 F12 F14 118 E3 141 F14 PC9 I/O FT - -
I2S_CKIN, SDIO_D1,
DCMI_D3, EVENTOUT
MCO1, TIM1_CH1,
I2C3_SCL,
67 100 E13 F15 119 F1 142 F15 PA8 I/O FT - USART1_CK, -
OTG_FS_SOF,
LCD_R6, EVENTOUT
TIM1_CH2,
I2C3_SMBA, OTG_FS_
68 101 E8 E15 120 E2 143 E15 PA9 I/O FT -
USART1_TX, VBUS
DCMI_D0, EVENTOUT
TIM1_CH3,
USART1_RX,
69 102 E9 D15 121 D5 144 D15 PA10 I/O FT - -
OTG_FS_ID,
DCMI_D1, EVENTOUT
TIM1_CH4,
USART1_CTS,
70 103 E10 C15 122 D4 145 C15 PA11 I/O FT - CAN1_RX, LCD_R4, -
OTG_FS_DM,
EVENTOUT
TIM1_ETR,
USART1_RTS,
71 104 E11 B15 123 E1 146 B15 PA12 I/O FT - CAN1_TX, LCD_R5, -
OTG_FS_DP,
EVENTOUT

DS9405 Rev 11 65/240

85
Pinouts and pin description STM32F427xx STM32F429xx

Table 10. STM32F427xx and STM32F429xx pin and ball definitions (continued)
Pin number

I / O structure
Pin type
UFBGA176(2)
Pin name

WLCSP143
UFBGA169

TFBGA216

Notes
Additional
LQFP100

LQFP144

LQFP176

LQFP208
(function after Alternate functions
functions
reset)(1)

PA13
JTMS-SWDIO,
72 105 E12 A15 124 D3 147 A15 (JTMS- I/O FT - -
EVENTOUT
SWDIO)
73 106 D12 F13 125 D1 148 E11 VCAP_2 S - - -
74 107 J10 F12 126 D2 149 F10 VSS S - - -
75 108 H4 G13 127 C1 150 F11 VDD S - - -
TIM8_CH1N,
- - D13 E12 128 - 151 E12 PH13 I/O FT - CAN1_TX, FMC_D21, -
LCD_G2, EVENTOUT
TIM8_CH2N,
- - C13 E13 129 - 152 E13 PH14 I/O FT - FMC_D22, DCMI_D4, -
LCD_G3, EVENTOUT
TIM8_CH3N,
- - C12 D13 130 - 153 D13 PH15 I/O FT - FMC_D23, DCMI_D11, -
LCD_G4, EVENTOUT
TIM5_CH4,
SPI2_NSS/I2S2_WS(8),
- - B13 E14 131 - 154 E14 PI0 I/O FT - -
FMC_D24, DCMI_D13,
LCD_G5, EVENTOUT
SPI2_SCK/I2S2_CK(8),
- - C11 D14 132 - 155 D14 PI1 I/O FT - FMC_D25, DCMI_D8, -
LCD_G6, EVENTOUT
TIM8_CH4,
SPI2_MISO,
- - B12 C14 133 - 156 C14 PI2 I/O FT - I2S2ext_SD, FMC_D26, -
DCMI_D9, LCD_G7,
EVENTOUT
TIM8_ETR,
SPI2_MOSI/I2S2_SD,
- - A12 C13 134 - 157 C13 PI3 I/O FT - -
FMC_D27, DCMI_D10,
EVENTOUT
- - D11 D9 135 F5 - F9 VSS S - - -
- - D3 C9 136 A1 158 E10 VDD S - - -

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STM32F427xx STM32F429xx Pinouts and pin description

Table 10. STM32F427xx and STM32F429xx pin and ball definitions (continued)
Pin number

I / O structure
Pin type
UFBGA176(2)
Pin name

WLCSP143
UFBGA169

TFBGA216

Notes
Additional
LQFP100

LQFP144

LQFP176

LQFP208
(function after Alternate functions
functions
reset)(1)

PA14
JTCK-SWCLK/
76 109 A11 A14 137 B1 159 A14 (JTCK- I/O FT - -
EVENTOUT
SWCLK)
JTDI,
TIM2_CH1/TIM2_ETR,
PA15
77 110 B11 A13 138 C2 160 A13 I/O FT - SPI1_NSS, -
(JTDI) SPI3_NSS/I2S3_WS,
EVENTOUT
SPI3_SCK/I2S3_CK,
USART3_TX,
78 111 C10 B14 139 A2 161 B14 PC10 I/O FT - UART4_TX, SDIO_D2, -
DCMI_D8, LCD_R2,
EVENTOUT
I2S3ext_SD,
SPI3_MISO,
79 112 B10 B13 140 B2 162 B13 PC11 I/O FT - USART3_RX, -
UART4_RX, SDIO_D3,
DCMI_D4, EVENTOUT
SPI3_MOSI/I2S3_SD,
USART3_CK,
80 113 A10 A12 141 C3 163 A12 PC12 I/O FT - -
UART5_TX, SDIO_CK,
DCMI_D9, EVENTOUT
CAN1_RX, FMC_D2,
81 114 D9 B12 142 B3 164 B12 PD0 I/O FT - -
EVENTOUT
CAN1_TX, FMC_D3,
82 115 C9 C12 143 C4 165 C12 PD1 I/O FT - -
EVENTOUT
TIM3_ETR,
UART5_RX,
83 116 B9 D12 144 A3 166 D12 PD2 I/O FT - SDIO_CMD, -
DCMI_D11,
EVENTOUT
SPI2_SCK/I2S2_CK,
USART2_CTS,
84 117 A9 D11 145 B4 167 C11 PD3 I/O FT - -
FMC_CLK, DCMI_D5,
LCD_G7, EVENTOUT

DS9405 Rev 11 67/240

85
Pinouts and pin description STM32F427xx STM32F429xx

Table 10. STM32F427xx and STM32F429xx pin and ball definitions (continued)
Pin number

I / O structure
Pin type
UFBGA176(2)
Pin name

WLCSP143
UFBGA169

TFBGA216

Notes
Additional
LQFP100

LQFP144

LQFP176

LQFP208
(function after Alternate functions
functions
reset)(1)

USART2_RTS,
85 118 D8 D10 146 B5 168 D11 PD4 I/O FT - FMC_NOE, -
EVENTOUT
USART2_TX,
86 119 C8 C11 147 A4 169 C10 PD5 I/O FT - FMC_NWE, -
EVENTOUT
- 120 - D8 148 - 170 F8 VSS S - - -
- 121 D6 C8 149 C5 171 E9 VDD S - - -
SPI3_MOSI/I2S3_SD,
SAI1_SD_A,
USART2_RX,
87 122 B8 B11 150 F4 172 B11 PD6 I/O FT - -
FMC_NWAIT,
DCMI_D10, LCD_B2,
EVENTOUT
USART2_CK,
88 123 A8 A11 151 A5 173 A11 PD7 I/O FT - FMC_NE1/FMC_NCE2, -
EVENTOUT
- - - - - - 174 B10 PJ12 I/O FT - LCD_B0, EVENTOUT -
- - - - - - 175 B9 PJ13 I/O FT - LCD_B1, EVENTOUT -
- - - - - - 176 C9 PJ14 I/O FT - LCD_B2, EVENTOUT -
- - - - - - 177 D10 PJ15 I/O FT - LCD_B3, EVENTOUT -
USART6_RX,
NC FMC_NE2/FMC_NCE3,
- 124 (3) C10 152 E5 178 D9 PG9 I/O FT - -
DCMI_VSYNC(9),
EVENTOUT
LCD_G3,
FMC_NCE4_1/FMC_N
- 125 C7 B10 153 C6 179 C8 PG10 I/O FT - -
E3, DCMI_D2,
LCD_B2, EVENTOUT
ETH_MII_TX_EN/ETH_
RMII_TX_EN,
- 126 B7 B9 154 B6 180 B8 PG11 I/O FT - FMC_NCE4_2, -
DCMI_D3, LCD_B3,
EVENTOUT

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STM32F427xx STM32F429xx Pinouts and pin description

Table 10. STM32F427xx and STM32F429xx pin and ball definitions (continued)
Pin number

I / O structure
Pin type
UFBGA176(2)
Pin name

WLCSP143
UFBGA169

TFBGA216

Notes
Additional
LQFP100

LQFP144

LQFP176

LQFP208
(function after Alternate functions
functions
reset)(1)

SPI6_MISO,
USART6_RTS,
- 127 A7 B8 155 A6 181 C7 PG12 I/O FT - -
LCD_B4, FMC_NE4,
LCD_B1, EVENTOUT
SPI6_SCK,
USART6_CTS,
NC
- 128 (3) A8 156 D6 182 B3 PG13 I/O FT - ETH_MII_TXD0/ETH_R -
MII_TXD0, FMC_A24,
EVENTOUT
SPI6_MOSI,
USART6_TX,
NC
- 129 (3) A7 157 F6 183 A4 PG14 I/O FT - ETH_MII_TXD1/ETH_R -
MII_TXD1, FMC_A25,
EVENTOUT
- 130 D7 D7 158 - 184 F7 VSS S - - -
- 131 L6 C7 159 E6 185 E8 VDD S - - -
- - - - - - 186 D8 PK3 I/O FT - LCD_B4, EVENTOUT -
- - - - - - 187 D7 PK4 I/O FT - LCD_B5, EVENTOUT -
- - - - - - 188 C6 PK5 I/O FT - LCD_B6, EVENTOUT -
- - - - - - 189 C5 PK6 I/O FT - LCD_B7, EVENTOUT -
- - - - - - 190 C4 PK7 I/O FT - LCD_DE, EVENTOUT -
USART6_CTS,
FMC_SDNCAS,
- 132 C6 B7 160 A7 191 B7 PG15 I/O FT - -
DCMI_D13,
EVENTOUT

PB3 JTDO/TRACESWO,
TIM2_CH2, SPI1_SCK,
89 133 B6 A10 161 B7 192 A10 (JTDO/TRACE I/O FT - -
SPI3_SCK/I2S3_CK,
SWO)
EVENTOUT
NJTRST, TIM3_CH1,
SPI1_MISO,
PB4
90 134 A6 A9 162 C7 193 A9 I/O FT - SPI3_MISO, -
(NJTRST) I2S3ext_SD,
EVENTOUT

DS9405 Rev 11 69/240

85
Pinouts and pin description STM32F427xx STM32F429xx

Table 10. STM32F427xx and STM32F429xx pin and ball definitions (continued)
Pin number

I / O structure
Pin type
UFBGA176(2)
Pin name

WLCSP143
UFBGA169

TFBGA216

Notes
Additional
LQFP100

LQFP144

LQFP176

LQFP208
(function after Alternate functions
functions
reset)(1)

TIM3_CH2,
I2C1_SMBA,
SPI1_MOSI,
SPI3_MOSI/I2S3_SD,
CAN2_RX,
91 135 D5 A6 163 C8 194 A8 PB5 I/O FT - -
OTG_HS_ULPI_D7,
ETH_PPS_OUT,
FMC_SDCKE1,
DCMI_D10,
EVENTOUT
TIM4_CH1, I2C1_SCL,
USART1_TX,
92 136 C5 B6 164 A8 195 B6 PB6 I/O FT - CAN2_TX, -
FMC_SDNE1,
DCMI_D5, EVENTOUT
TIM4_CH2, I2C1_SDA,
USART1_RX, FMC_NL,
93 137 B5 B5 165 B8 196 B5 PB7 I/O FT - -
DCMI_VSYNC,
EVENTOUT
94 138 A5 D6 166 C9 197 E6 BOOT0 I B - - VPP
TIM4_CH3,
TIM10_CH1,
I2C1_SCL, CAN1_RX,
95 139 D4 A5 167 A9 198 A7 PB8 I/O FT - -
ETH_MII_TXD3,
SDIO_D4, DCMI_D6,
LCD_B6, EVENTOUT
TIM4_CH4,
TIM11_CH1,
I2C1_SDA,
96 140 C4 B4 168 B9 199 B4 PB9 I/O FT - SPI2_NSS/I2S2_WS, -
CAN1_TX, SDIO_D5,
DCMI_D7, LCD_B7,
EVENTOUT
TIM4_ETR,
UART8_RX,
97 141 B4 A4 169 B10 200 A6 PE0 I/O FT - -
FMC_NBL0, DCMI_D2,
EVENTOUT

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STM32F427xx STM32F429xx Pinouts and pin description

Table 10. STM32F427xx and STM32F429xx pin and ball definitions (continued)
Pin number

I / O structure
Pin type
UFBGA176(2)
Pin name

WLCSP143
UFBGA169

TFBGA216

Notes
Additional
LQFP100

LQFP144

LQFP176

LQFP208
(function after Alternate functions
functions
reset)(1)

UART8_Tx,
98 142 A4 A3 170 A10 201 A5 PE1 I/O FT - FMC_NBL1, DCMI_D3, -
EVENTOUT
99 - F5 D5 - - 202 F6 VSS S - - -
- 143 C3 C6 171 A11 203 E5 PDR_ON S - - -
100 144 K6 C5 172 D7 204 E7 VDD S - - -
TIM8_BKIN,
- - B3 D4 173 - 205 C3 PI4 I/O FT - FMC_NBL2, DCMI_D5, -
LCD_B4, EVENTOUT
TIM8_CH1,
FMC_NBL3,
- - A3 C4 174 - 206 D3 PI5 I/O FT - -
DCMI_VSYNC,
LCD_B5, EVENTOUT
TIM8_CH2, FMC_D28,
- - A2 C3 175 - 207 D6 PI6 I/O FT - DCMI_D6, LCD_B6, -
EVENTOUT
TIM8_CH3, FMC_D29,
- - B1 C2 176 - 208 D4 PI7 I/O FT - DCMI_D7, LCD_B7, -
EVENTOUT
1. Function availability depends on the chosen device.
2. On the UFBGA176 package, the balls F6, F7, F8, F9, F10, G6, G7, G8, G9, G10, H6, H7, H8, H9, H10, J6, J7, J8, J9, J10,
K6, K7, K8, K9, and K10 are connected to VSS. Their purpose is heat dissipation and package mechanical stability
3. NC (not-connected) pins are not bonded. They must be configured by software to output push-pull and forced to 0 in the
output data register to avoid extra current consumption in low-power modes.
4. PC13, PC14, PC15, and PI8 are supplied through the power switch. Since the switch only sinks a limited amount of current
(3 mA), the use of GPIOs PC13 to PC15 and PI8 in output mode is limited:
- The speed should not exceed 2 MHz with a maximum load of 30 pF.
- These I/Os must not be used as a current source (for example, to drive an LED).
5. The main function after the first backup domain power-up. Later on, it depends on the contents of the RTC registers even
after reset (because these registers are not reset by the main reset). For details on how to manage these I/Os, refer to the
RTC register description sections in the STM32F4xx reference manual, available from the STMicroelectronics website:
www.st.com.
6. FT = 5 V tolerant except when in analog mode or oscillator mode (for PC14, PC15, PH0, and PH1).
7. If the device is delivered in a WLCSP143, UFBGA169, UFBGA176, LQFP176 or TFBGA216 package, and the
BYPASS_REG pin is set to VDD (Regulator OFF/internal reset ON mode), then PA0 is used as an internal Reset (active low).
8. PI0 and PI1 cannot be used for I2S2 full-duplex mode.
9. The DCMI_VSYNC alternate function on PG9 is only available on silicon revision 3.

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85
Pinouts and pin description STM32F427xx STM32F429xx

Table 11. FMC pin definition

NOR/PSRAM/ NOR/PSRAM
Pin name CF NAND16 SDRAM
SRAM Mux

PF0 A0 A0 - - A0
PF1 A1 A1 - - A1
PF2 A2 A2 - - A2
PF3 A3 A3 - - A3
PF4 A4 A4 - - A4
PF5 A5 A5 - - A5
PF12 A6 A6 - - A6
PF13 A7 A7 - - A7
PF14 A8 A8 - - A8
PF15 A9 A9 - - A9
PG0 A10 A10 - - A10
PG1 - A11 - - A11
PG2 - A12 - - A12
PG3 - A13 - - -
PG4 - A14 - - BA0
PG5 - A15 - - BA1
PD11 - A16 A16 CLE -
PD12 - A17 A17 ALE -
PD13 - A18 A18 - -
PE3 - A19 A19 - -
PE4 - A20 A20 - -
PE5 - A21 A21 - -
PE6 - A22 A22 - -
PE2 - A23 A23 - -
PG13 - A24 A24 - -
PG14 - A25 A25 - -
PD14 D0 D0 DA0 D0 D0
PD15 D1 D1 DA1 D1 D1
PD0 D2 D2 DA2 D2 D2
PD1 D3 D3 DA3 D3 D3
PE7 D4 D4 DA4 D4 D4
PE8 D5 D5 DA5 D5 D5
PE9 D6 D6 DA6 D6 D6
PE10 D7 D7 DA7 D7 D7

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STM32F427xx STM32F429xx Pinouts and pin description

Table 11. FMC pin definition (continued)

NOR/PSRAM/ NOR/PSRAM
Pin name CF NAND16 SDRAM
SRAM Mux

PE11 D8 D8 DA8 D8 D8
PE12 D9 D9 DA9 D9 D9
PE13 D10 D10 DA10 D10 D10
PE14 D11 D11 DA11 D11 D11
PE15 D12 D12 DA12 D12 D12
PD8 D13 D13 DA13 D13 D13
PD9 D14 D14 DA14 D14 D14
PD10 D15 D15 DA15 D15 D15
PH8 - D16 - - D16
PH9 - D17 - - D17
PH10 - D18 - - D18
PH11 - D19 - - D19
PH12 - D20 - - D20
PH13 - D21 - - D21
PH14 - D22 - - D22
PH15 - D23 - - D23
PI0 - D24 - - D24
PI1 - D25 - - D25
PI2 - D26 - - D26
PI3 - D27 - - D27
PI6 - D28 - - D28
PI7 - D29 - - D29
PI9 - D30 - - D30
PI10 - D31 - - D31
PD7 - NE1 NE1 NCE2 -
PG9 - NE2 NE2 NCE3 -
PG10 NCE4_1 NE3 NE3 - -
PG11 NCE4_2 - - - -
PG12 - NE4 NE4 - -
PD3 - CLK CLK - -
PD4 NOE NOE NOE NOE -
PD5 NWE NWE NWE NWE -
PD6 NWAIT NWAIT NWAIT NWAIT -
PB7 - NL(NADV) NL(NADV) - -

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85
Pinouts and pin description STM32F427xx STM32F429xx

Table 11. FMC pin definition (continued)

NOR/PSRAM/ NOR/PSRAM
Pin name CF NAND16 SDRAM
SRAM Mux

PF6 NIORD - - - -
PF7 NREG - - - -
PF8 NIOWR - - - -
PF9 CD - - - -
PF10 INTR - - - -
PG6 - - - INT2 -
PG7 - - - INT3 -
PE0 - NBL0 NBL0 - NBL0
PE1 - NBL1 NBL1 - NBL1
PI4 - NBL2 - - NBL2
PI5 - NBL3 - - NBL3
PG8 - - - - SDCLK
PC0 - - - - SDNWE
PF11 - - - - SDNRAS
PG15 - - - - SDNCAS
PH2 - - - - SDCKE0
PH3 - - - - SDNE0
PH6 - - - - SDNE1
PH7 - - - - SDCKE1
PH5 - - - - SDNWE
PC2 - - - - SDNE0
PC3 - - - - SDCKE0
PB5 - - - - SDCKE1
PB6 - - - - SDNE1

74/240 DS9405 Rev 11

 STM32F427xx STM32F429xx
Table 12. STM32F427xx and STM32F429xx alternate function mapping
AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15

Port SPI3/ USART6/ CAN1/2/ OTG2_HS

TIM8/9/ I2C1/ SPI1/2/ SPI2/3/ FMC/SDIO
SYS TIM1/2 TIM3/4/5 USART1/ UART4/5/7 TIM12/13/14 /OTG1_ ETH DCMI LCD SYS
10/11 2/3 3/4/5/6 SAI1 /OTG2_FS
2/3 /8 /LCD FS

TIM2_
TIM5_ TIM8_ USART2_ ETH_MII_ EVEN
PA0 - CH1/TIM2 - - - UART4_TX - - - - -
CH1 ETR CTS CRS TOUT
_ETR

ETH_MII_
TIM2_ TIM5_ USART2_ RX_CLK/E EVEN
PA1 - - - - - UART4_RX - - - - -
CH2 CH2 RTS TH_RMII_ TOUT
REF_CLK

TIM2_ TIM5_ TIM9_ USART2_ ETH_ EVEN

PA2 - - - - - - - - - -
CH3 CH3 CH1 TX MDIO TOUT

TIM2_ TIM5_ TIM9_ USART2_ OTG_HS_ ETH_MII_ EVEN

PA3 - - - - - - - - LCD_B5
CH4 CH4 CH2 RX ULPI_D0 COL TOUT

SPI3_
SPI1_ USART2_ OTG_HS_ DCMI_ LCD_ EVEN
DS9405 Rev 11

PA4 - - - - - NSS/ - - - -
NSS CK SOF HSYNC VSYNC TOUT
I2S3_WS

TIM2_
TIM8_ SPI1_ OTG_HS_ EVEN
PA5 - CH1/TIM2 - - - - - - - - - -
CH1N SCK ULPI_CK TOUT
_ETR
Port A
TIM1_ TIM3_ TIM8_ SPI1_ DCMI_ EVEN
PA6 - - - - - TIM13_CH1 - - - LCD_G2
BKIN CH1 BKIN MISO PIXCLK TOUT

ETH_MII_
TIM1_ TIM3_ TIM8_ SPI1_ RX_DV/ EVEN
PA7 - - - - - TIM14_CH1 - - - -
CH1N CH2 CH1N MOSI ETH_RMII TOUT
_CRS_DV

TIM1_ I2C3_ USART1_ OTG_FS_ EVEN

PA8 MCO1 - - - - - - - - - LCD_R6
CH1 SCL CK SOF TOUT

Pinouts and pin description

TIM1_ I2C3_ USART1_ DCMI_ EVEN
PA9 - - - - - - - - - - -
CH2 SMBA TX D0 TOUT

TIM1_ USART1_ OTG_FS_ DCMI_ EVEN

PA10 - - - - - - - - - - -
CH3 RX ID D1 TOUT

TIM1_ USART1_ OTG_FS_ EVEN

PA11 - - - - - - - CAN1_RX - - - LCD_R4
CH4 CTS DM TOUT

TIM1_ USART1_ OTG_FS_ EVEN

PA12 - - - - - - - CAN1_TX - - - LCD_R5
ETR RTS DP TOUT
75/240
 Table 12. STM32F427xx and STM32F429xx alternate function mapping (continued)
76/240

Pinouts and pin description

AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15

Port SPI3/ USART6/ CAN1/2/ OTG2_HS

TIM8/9/ I2C1/ SPI1/2/ SPI2/3/ FMC/SDIO
SYS TIM1/2 TIM3/4/5 USART1/ UART4/5/7 TIM12/13/14 /OTG1_ ETH DCMI LCD SYS
10/11 2/3 3/4/5/6 SAI1 /OTG2_FS
2/3 /8 /LCD FS

JTMS-
EVEN
PA13 SWDI - - - - - - - - - - - - - -
TOUT
O

JTCK-
EVEN
Port A PA14 SWCL - - - - - - - - - - - - - -
TOUT
K

TIM2_ SPI3_
SPI1_ EVEN
PA15 JTDI CH1/TIM2 - - - NSS/ - - - - - - - -
NSS TOUT
_ETR I2S3_WS

TIM1_ TIM3_ TIM8_ OTG_HS_ ETH_MII_ EVEN

PB0 - - - - - - LCD_R3 - - -
CH2N CH3 CH2N ULPI_D1 RXD2 TOUT

TIM1_ TIM3_ TIM8_ OTG_HS_ ETH_MII_ EVEN

PB1 - - - - - - LCD_R6 - - -
CH3N CH4 CH3N ULPI_D2 RXD3 TOUT
DS9405 Rev 11

EVEN
PB2 - - - - - - - - - - - - - - -
TOUT

JTDO/ SPI3_
TIM2_ SPI1_ EVEN
PB3 TRAC - - - SCK/ - - - - - - - -
CH2 SCK TOUT
ESWO I2S3_CK

NJTR TIM3_ SPI1_ SPI3_ I2S3ext_ EVEN

PB4 - - - - - - - - - -
ST CH1 MISO MISO SD TOUT

SPI3_
TIM3_ I2C1_ SPI1_ OTG_HS_ ETH_PPS FMC_ DCMI_ EVEN
PB5 - - - MOSI/ - - CAN2_RX -
Port B CH2 SMBA MOSI ULPI_D7 _OUT SDCKE1 D10 TOUT
I2S3_SD

TIM4_ I2C1_ USART1_ FMC_ DCMI_ EVEN

PB6 - - - - - - CAN2_TX - - -
CH1 SCL TX SDNE1 D5 TOUT

STM32F427xx STM32F429xx
TIM4_ I2C1_ USART1_ DCMI_ EVEN
PB7 - - - - - - - - - FMC_NL -
CH2 SDA RX VSYNC TOUT

TIM4_ TIM10_ I2C1_ ETH_MII_ DCMI_ EVEN

PB8 - - - - - - CAN1_RX - SDIO_D4 LCD_B6
CH3 CH1 SCL TXD3 D6 TOUT

SPI2_
TIM4_ TIM11_ I2C1_ DCMI_ EVEN
PB9 - - NSS/I2 - - - CAN1_TX - - SDIO_D5 LCD_B7
CH4 CH1 SDA D7 TOUT
S2_WS

SPI2_
TIM2_ I2C2_ USART3_ OTG_HS_ ETH_MII_ EVEN
PB10 - - - SCK/I2 - - - - - LCD_G4
CH3 SCL TX ULPI_D3 RX_ER TOUT
S2_CK
 Table 12. STM32F427xx and STM32F429xx alternate function mapping (continued)

STM32F427xx STM32F429xx
AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15

Port SPI3/ USART6/ CAN1/2/ OTG2_HS

TIM8/9/ I2C1/ SPI1/2/ SPI2/3/ FMC/SDIO
SYS TIM1/2 TIM3/4/5 USART1/ UART4/5/7 TIM12/13/14 /OTG1_ ETH DCMI LCD SYS
10/11 2/3 3/4/5/6 SAI1 /OTG2_FS
2/3 /8 /LCD FS

ETH_MII_
TIM2_ I2C2_ USART3_ OTG_HS_ TX_EN/ EVEN
PB11 - - - - - - - - - LCD_G5
CH4 SDA RX ULPI_D4 ETH_RMII TOUT
_TX_EN

ETH_MII_
SPI2_
TIM1_ I2C2_ USART3_ OTG_HS_ TXD0/ETH OTG_HS_ EVEN
PB12 - - - NSS/I2 - - CAN2_RX - -
BKIN SMBA CK ULPI_D5 _RMII_ ID TOUT
S2_WS
TXD0

Port B ETH_MII_
SPI2_
TIM1_ USART3_ OTG_HS_ TXD1/ETH EVEN
PB13 - - - - SCK/I2 - - CAN2_TX - - -
CH1N CTS ULPI_D6 _RMII_TX TOUT
S2_CK
D1

TIM1_ TIM8_ SPI2_ I2S2ext_ USART3_ OTG_HS_ EVEN

PB14 - - - - TIM12_CH1 - - - -
CH2N CH2N MISO SD RTS DM TOUT
DS9405 Rev 11

SPI2_
RTC_ TIM1_ TIM8_ OTG_HS_ EVEN
PB15 - - MOSI/I2 - - - TIM12_CH2 - - - -
REFIN CH3N CH3N DP TOUT
S2_SD

OTG_HS_ FMC_SDN EVEN

PC0 - - - - - - - - - - - - -
ULPI_STP WE TOUT

EVEN
PC1 - - - - - - - - - - - ETH_MDC - - -
TOUT

SPI2_ I2S2ext_ OTG_HS_ ETH_MII_ FMC_ EVEN

PC2 - - - - - - - - - -
MISO SD ULPI_DIR TXD2 SDNE0 TOUT

SPI2_
OTG_HS_ ETH_MII_ FMC_ EVEN
PC3 - - - - - MOSI/I2 - - - - - -
ULPI_NXT TX_CLK SDCKE0 TOUT
S2_SD

Pinouts and pin description

Port ETH_MII_
C RXD0/ETH EVEN
PC4 - - - - - - - - - - - - - -
_RMII_ TOUT
RXD0

ETH_MII_
RXD1/ETH EVEN
PC5 - - - - - - - - - - - - - -
_RMII_ TOUT
RXD1

TIM3_ TIM8_ I2S2_ USART6_ DCMI_ LCD_ EVEN

PC6 - - - - - - - - SDIO_D6
CH1 CH1 MCK TX D0 HSYNC TOUT
77/240

TIM3_ TIM8_ I2S3_ USART6_ DCMI_ EVEN

PC7 - - - - - - - - SDIO_D7 LCD_G6
CH2 CH2 MCK RX D1 TOUT
 Table 12. STM32F427xx and STM32F429xx alternate function mapping (continued)
78/240

Pinouts and pin description

AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15

Port SPI3/ USART6/ CAN1/2/ OTG2_HS

TIM8/9/ I2C1/ SPI1/2/ SPI2/3/ FMC/SDIO
SYS TIM1/2 TIM3/4/5 USART1/ UART4/5/7 TIM12/13/14 /OTG1_ ETH DCMI LCD SYS
10/11 2/3 3/4/5/6 SAI1 /OTG2_FS
2/3 /8 /LCD FS

TIM3_ TIM8_ USART6_ DCMI_ EVEN

PC8 - - - - - - - - - SDIO_D0 -
CH3 CH3 CK D2 TOUT

TIM3_ TIM8_ I2C3_ I2S_ DCMI_ EVEN

PC9 MCO2 - - - - - - - SDIO_D1 -
CH4 CH4 SDA CKIN D3 TOUT

SPI3_
USART3_ DCMI_ EVEN
PC10 - - - - - - SCK/I2S UART4_TX - - - SDIO_D2 LCD_R2
TX D8 TOUT
3_CK

I2S3ext SPI3_ USART3_ DCMI_ EVEN

PC11 - - - - - UART4_RX - - - SDIO_D3 -
_SD MISO RX D4 TOUT
Port
C
SPI3_
USART3_ DCMI_ EVEN
PC12 - - - - - - MOSI/I2 UART5_TX - - - SDIO_CK -
CK D9 TOUT
S3_SD
DS9405 Rev 11

EVEN
PC13 - - - - - - - - - - - - - - -
TOUT

EVEN
PC14 - - - - - - - - - - - - - - -
TOUT

EVEN
PC15 - - - - - - - - - - - - - - -
TOUT

EVEN
PD0 - - - - - - - - - CAN1_RX - - FMC_D2 - -
TOUT

EVEN
PD1 - - - - - - - - - CAN1_TX - - FMC_D3 - -
TOUT

TIM3_ SDIO_ DCMI_ EVEN

PD2 - - - - - - - UART5_RX - - - -
ETR CMD D11 TOUT

STM32F427xx STM32F429xx
SPI2_S
USART2_ DCMI_ EVEN
Port PD3 - - - - - CK/I - - - - - FMC_CLK LCD_G7
CTS D5 TOUT
D 2S2_CK

USART2_ EVEN
PD4 - - - - - - - - - - - FMC_NOE - -
RTS TOUT

USART2_ EVEN
PD5 - - - - - - - - - - - FMC_NWE - -
TX TOUT

SPI3_
SAI1_ USART2_ FMC_ DCMI_ EVEN
PD6 - - - - - MOSI/I2 - - - - LCD_B2
SD_A RX NWAIT D10 TOUT
S3_SD
 Table 12. STM32F427xx and STM32F429xx alternate function mapping (continued)

STM32F427xx STM32F429xx
AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15

Port SPI3/ USART6/ CAN1/2/ OTG2_HS

TIM8/9/ I2C1/ SPI1/2/ SPI2/3/ FMC/SDIO
SYS TIM1/2 TIM3/4/5 USART1/ UART4/5/7 TIM12/13/14 /OTG1_ ETH DCMI LCD SYS
10/11 2/3 3/4/5/6 SAI1 /OTG2_FS
2/3 /8 /LCD FS

FMC_NE1/
USART2_ EVEN
PD7 - - - - - - - - - - - FMC_ - -
CK TOUT
NCE2

USART3_ EVEN
PD8 - - - - - - - - - - - FMC_D13 - -
TX TOUT

USART3_ EVEN
PD9 - - - - - - - - - - - FMC_D14 - -
RX TOUT

USART3_ EVEN
PD10 - - - - - - - - - - - FMC_D15 - LCD_B3
CK TOUT
Port
USART3_ EVEN
D PD11 - - - - - - - - - - - FMC_A16 - -
CTS TOUT

TIM4_ USART3_ EVEN

PD12 - - - - - - - - - - FMC_A17 - -
DS9405 Rev 11

CH1 RTS TOUT

TIM4_ EVEN
PD13 - - - - - - - - - - - FMC_A18 - -
CH2 TOUT

TIM4_ EVEN
PD14 - - - - - - - - - - - FMC_D0 - -
CH3 TOUT

TIM4_ EVEN
PD15 - - - - - - - - - - - FMC_D1 - -
CH4 TOUT

TIM4_ FMC_ DCMI_ EVEN

PE0 - - - - - - - UART8_Rx - - - -
ETR NBL0 D2 TOUT

FMC_ DCMI_ EVEN

PE1 - - - - - - - - UART8_Tx - - - -
NBL1 D3 TOUT

Pinouts and pin description

TRAC SPI4_ SAI1_ ETH_MII_ EVEN
PE2 - - - - - - - - FMC_A23 - -
ECLK SCK MCLK_A TXD3 TOUT

TRAC SAI1_ EVEN

Port E PE3 - - - - - - - - - - FMC_A19 - -
ED0 SD_B TOUT

TRAC SPI4_ SAI1_ DCMI_ EVEN

PE4 - - - - - - - - - FMC_A20 LCD_B0
ED1 NSS FS_A D4 TOUT

TRAC TIM9_ SPI4_M SAI1_ DCMI_ EVEN

PE5 - - - - - - - - FMC_A21 LCD_G0
ED2 CH1 ISO SCK_A D6 TOUT

TRAC TIM9_ SPI4_ SAI1_ DCMI_ EVEN

PE6 - - - - - - - - FMC_A22 LCD_G1
ED3 CH2 MOSI SD_A D7 TOUT
79/240
 Table 12. STM32F427xx and STM32F429xx alternate function mapping (continued)
80/240

Pinouts and pin description

AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15

Port SPI3/ USART6/ CAN1/2/ OTG2_HS

TIM8/9/ I2C1/ SPI1/2/ SPI2/3/ FMC/SDIO
SYS TIM1/2 TIM3/4/5 USART1/ UART4/5/7 TIM12/13/14 /OTG1_ ETH DCMI LCD SYS
10/11 2/3 3/4/5/6 SAI1 /OTG2_FS
2/3 /8 /LCD FS

TIM1_ EVEN
PE7 - - - - - - - UART7_Rx - - - FMC_D4 - -
ETR TOUT

TIM1_ EVEN
PE8 - - - - - - - UART7_Tx - - - FMC_D5 - -
CH1N TOUT

TIM1_ EVEN
PE9 - - - - - - - - - - - FMC_D6 - -
CH1 TOUT

TIM1_ EVEN
PE10 - - - - - - - - - - - FMC_D7 - -
CH2N TOUT

TIM1_ SPI4_ EVEN

Port E PE11 - - - - - - - - - - FMC_D8 - LCD_G3
CH2 NSS TOUT

TIM1_ SPI4_ EVEN

PE12 - - - - - - - - - - FMC_D9 - LCD_B4
CH3N SCK TOUT
DS9405 Rev 11

TIM1_ SPI4_ EVEN

PE13 - - - - - - - - - - FMC_D10 - LCD_DE
CH3 MISO TOUT

TIM1_ SPI4_ LCD_ EVEN

PE14 - - - - - - - - - - FMC_D11 -
CH4 MOSI CLK TOUT

TIM1_ EVEN
PE15 - - - - - - - - - - FMC_D12 - LCD_R7
BKIN TOUT

I2C2_ EVEN
PF0 - - - - - - - - - - - FMC_A0 - -
SDA TOUT

I2C2_ EVEN
PF1 - - - - - - - - FMC_A1 - -
SCL TOUT

I2C2_ EVEN
PF2 - - - - - - - - - - - FMC_A2 - -

STM32F427xx STM32F429xx
SMBA TOUT

EVEN
PF3 - - - - - - - - - - - FMC_A3 - -
TOUT
Port F
EVEN
PF4 - - - - - - - - - - - FMC_A4 - -
TOUT

EVEN
PF5 - - - - - - - - - - - FMC_A5 - -
TOUT

TIM10_ SPI5_ SAI1_ FMC_ EVEN

PF6 - - - - - UART7_Rx - - - - -
CH1 NSS SD_B NIORD TOUT

TIM11_ SPI5_ SAI1_ FMC_ EVEN

PF7 - - - - - UART7_Tx - - - - -
CH1 SCK MCLK_B NREG TOUT
 Table 12. STM32F427xx and STM32F429xx alternate function mapping (continued)

STM32F427xx STM32F429xx
AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15

Port SPI3/ USART6/ CAN1/2/ OTG2_HS

TIM8/9/ I2C1/ SPI1/2/ SPI2/3/ FMC/SDIO
SYS TIM1/2 TIM3/4/5 USART1/ UART4/5/7 TIM12/13/14 /OTG1_ ETH DCMI LCD SYS
10/11 2/3 3/4/5/6 SAI1 /OTG2_FS
2/3 /8 /LCD FS

SPI5_ SAI1_ FMC_ EVEN

PF8 - - - - - - - TIM13_CH1 - - - -
MISO SCK_B NIOWR TOUT

SPI5_ SAI1_ EVEN

PF9 - - - - - - - TIM14_CH1 - - FMC_CD - -
MOSI FS_B TOUT

DCMI_ EVEN
PF10 - - - - - - - - - - - - FMC_INTR LCD_DE
D11 TOUT

SPI5_ FMC_ DCMI_ EVEN

PF11 - - - - - - - - - - - -
MOSI SDNRAS D12 TOUT
Port F
EVEN
PF12 - - - - - - - - - - - - FMC_A6 - -
TOUT

EVEN
PF13 - - - - - - - - - - - - FMC_A7 - -
TOUT
DS9405 Rev 11

EVEN
PF14 - - - - - - - - - - - - FMC_A8 - -
TOUT

EVEN
PF15 - - - - - - - - - - - - FMC_A9 - -
TOUT

EVEN
PG0 - - - - - - - - - - - - FMC_A10 - -
TOUT

EVEN
PG1 - - - - - - - - - - - - FMC_A11 - -
TOUT

EVEN
PG2 - - - - - - - - - - - - FMC_A12 - -
TOUT

EVEN
PG3 - - - - - - - - - - - - FMC_A13 - -

Pinouts and pin description

TOUT

Port FMC_A14/ EVEN

PG4 - - - - - - - - - - - - - -
G FMC_BA0 TOUT

FMC_A15/ EVEN
PG5 - - - - - - - - - - - - - -
FMC_BA1 TOUT

DCMI_ EVEN
PG6 - - - - - - - - - - - - FMC_INT2 LCD_R7
D12 TOUT

USART6_ DCMI_ LCD_ EVEN

PG7 - - - - - - - - - - - FMC_INT3
CK D13 CLK TOUT
81/240

SPI6_ USART6_ ETH_PPS FMC_SDC EVEN

PG8 - - - - - - - - - - -
NSS RTS _OUT LK TOUT
 Table 12. STM32F427xx and STM32F429xx alternate function mapping (continued)
82/240

Pinouts and pin description

AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15

Port SPI3/ USART6/ CAN1/2/ OTG2_HS

TIM8/9/ I2C1/ SPI1/2/ SPI2/3/ FMC/SDIO
SYS TIM1/2 TIM3/4/5 USART1/ UART4/5/7 TIM12/13/14 /OTG1_ ETH DCMI LCD SYS
10/11 2/3 3/4/5/6 SAI1 /OTG2_FS
2/3 /8 /LCD FS

FMC_NE2/ DCMI_
USART6_ EVEN
PG9 - - - - - - - - - - - FMC_ VSYNC -
RX (1) TOUT
NCE3

FMC_
DCMI_ EVEN
PG10 - - - - - - - - - LCD_G3 - - NCE4_1/ LCD_B2
D2 TOUT
FMC_NE3

ETH_MII_
TX_EN/ FMC_ DCMI_ EVEN
PG11 - - - - - - - - - - - LCD_B3
ETH_RMII NCE4_2 D3 TOUT
_TX_EN

Port SPI6_ USART6_ EVEN

PG12 - - - - - - - LCD_B4 - - FMC_NE4 - LCD_B1
G MISO RTS TOUT

ETH_MII_
DS9405 Rev 11

SPI6_ USART6_ TXD0/ EVEN

PG13 - - - - - - - - - FMC_A24 - -
SCK CTS ETH_RMII TOUT
_TXD0

ETH_MII_
SPI6_ USART6_ TXD1/ EVEN
PG14 - - - - - - - - - FMC_A25 - -
MOSI TX ETH_RMII TOUT
_TXD1

USART6_ FMC_ DCMI_ EVEN

PG15 - - - - - - - - - - - -
CTS SDNCAS D13 TOUT

EVEN
PH0 - - - - - - - - - - - - - - -
TOUT

EVEN
PH1 - - - - - - - - - - - - - - -
TOUT

STM32F427xx STM32F429xx
ETH_MII_ FMC_ EVEN
PH2 - - - - - - - - - - - - LCD_R0
CRS SDCKE0 TOUT

Port ETH_MII_ FMC_SDN EVEN

PH3 - - - - - - - - - - - - LCD_R1
H COL E0 TOUT

I2C2_ OTG_HS_ EVEN

PH4 - - - - - - - - - - - - -
SCL ULPI_NXT TOUT

I2C2_ SPI5_N FMC_SDN EVEN

PH5 - - - - - - - - - - - -
SDA SS WE TOUT

I2C2_ SPI5_ ETH_MII_ FMC_ DCMI_

PH6 - - - - - - - TIM12_CH1 - - -
SMBA SCK RXD2 SDNE1 D8
 Table 12. STM32F427xx and STM32F429xx alternate function mapping (continued)

STM32F427xx STM32F429xx
AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15

Port SPI3/ USART6/ CAN1/2/ OTG2_HS

TIM8/9/ I2C1/ SPI1/2/ SPI2/3/ FMC/SDIO
SYS TIM1/2 TIM3/4/5 USART1/ UART4/5/7 TIM12/13/14 /OTG1_ ETH DCMI LCD SYS
10/11 2/3 3/4/5/6 SAI1 /OTG2_FS
2/3 /8 /LCD FS

I2C3_ SPI5_ ETH_MII_ FMC_ DCMI_

PH7 - - - - - - - - - - -
SCL MISO RXD3 SDCKE1 D9

I2C3_ DCMI_ EVEN

PH8 - - - - - - - - - - - FMC_D16 LCD_R2
SDA HSYNC TOUT

I2C3_ DCMI_ EVEN

PH9 - - - - - - - - TIM12_CH2 - - FMC_D17 LCD_R3
SMBA D0 TOUT

TIM5_ DCMI_ EVEN

PH10 - - - - - - - - - - - FMC_D18 LCD_R4
CH1 D1 TOUT

Port TIM5_ DCMI_ EVEN

PH11 - - - - - - - - - - - FMC_D19 LCD_R5
H CH2 D2 TOUT

TIM5_ DCMI_ EVEN

PH12 - - - - - - - - - - - FMC_D20 LCD_R6
CH3 D3 TOUT
DS9405 Rev 11

TIM8_ EVEN
PH13 - - - - - - - - CAN1_TX - - FMC_D21 - LCD_G2
CH1N TOUT

TIM8_ DCMI_ EVEN

PH14 - - - - - - - - - - - FMC_D22 LCD_G3
CH2N D4 TOUT

TIM8_ DCMI_ EVEN

PH15 - - - - - - - - - - - FMC_D23 LCD_G4
CH3N D11 TOUT

SPI2_
TIM5_ DCMI_ EVEN
PI0 - - - - NSS/I2 - - - - - - FMC_D24 LCD_G5
CH4 D13 TOUT
S2_WS

SPI2_
DCMI_ EVEN
PI1 - - - - - SCK/I2 - - - - - - FMC_D25 LCD_G6
D8 TOUT
S2_CK

Pinouts and pin description

TIM8_ SPI2_ I2S2ext_ DCMI_ EVEN
PI2 - - - - - - - - - FMC_D26 LCD_G7
CH4 MISO SD D9 TOUT

Port I SPI2_M
TIM8_ DCMI_D EVEN
PI3 - - - - OSI/I2S FMC_D27
ETR 10 TOUT
2_SD

TIM8_ FMC_ DCMI_D EVEN

PI4 - - - - - - - - - - - LCD_B4
BKIN NBL2 5 TOUT

TIM8_ FMC_ DCMI_ EVEN

PI5 - - - - - - - - - - - LCD_B5
CH1 NBL3 VSYNC TOUT
83/240

TIM8_ DCMI_ EVEN

PI6 - - - - - - - - - - - FMC_D28 LCD_B6
CH2 D6 TOUT
 Table 12. STM32F427xx and STM32F429xx alternate function mapping (continued)
84/240

Pinouts and pin description

AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15

Port SPI3/ USART6/ CAN1/2/ OTG2_HS

TIM8/9/ I2C1/ SPI1/2/ SPI2/3/ FMC/SDIO
SYS TIM1/2 TIM3/4/5 USART1/ UART4/5/7 TIM12/13/14 /OTG1_ ETH DCMI LCD SYS
10/11 2/3 3/4/5/6 SAI1 /OTG2_FS
2/3 /8 /LCD FS

TIM8_ DCMI_ EVEN

PI7 - - - - - - - - - - - FMC_D29 LCD_B7
CH3 D7 TOUT

EVEN
PI8 - - - - - - - - - - - - - - -
TOUT

LCD_ EVEN
PI9 - - - - - - - - - CAN1_RX - - FMC_D30 -
VSYNC TOUT

ETH_MII_ LCD_ EVEN

PI10 - - - - - - - - - - - FMC_D31 -
RX_ER HSYNC TOUT

OTG_HS_ EVEN
Port I PI11 - - - - - - - - - - - - - -
ULPI_DIR TOUT

LCD_ EVEN
PI12 - - - - - - - - - - - - - -
HSYNC TOUT
DS9405 Rev 11

LCD_ EVEN
PI13 - - - - - - - - - - - - - -
VSYNC TOUT

LCD_ EVEN
PI14 - - - - - - - - - - - - - -
CLK TOUT

EVEN
PI15 - - - - - - - - - - - - - - LCD_R0
TOUT

EVEN
PJ0 - - - - - - - - - - - - - - LCD_R1
TOUT

EVEN
PJ1 - - - - - - - - - - - - - - LCD_R2
TOUT

EVEN
PJ2 - - - - - - - - - - - - - - LCD_R3

STM32F427xx STM32F429xx
TOUT

EVEN
PJ3 - - - - - - - - - - - - - - LCD_R4
TOUT
Port J
EVEN
PJ4 - - - - - - - - - - - - - - LCD_R5
TOUT

EVEN
PJ5 - - - - - - - - - - - - - - LCD_R6
TOUT

EVEN
PJ6 - - - - - - - - - - - - - - LCD_R7
TOUT

EVEN
PJ7 - - - - - - - - - - - - - - LCD_G0
TOUT
 Table 12. STM32F427xx and STM32F429xx alternate function mapping (continued)

STM32F427xx STM32F429xx
AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15

Port SPI3/ USART6/ CAN1/2/ OTG2_HS

TIM8/9/ I2C1/ SPI1/2/ SPI2/3/ FMC/SDIO
SYS TIM1/2 TIM3/4/5 USART1/ UART4/5/7 TIM12/13/14 /OTG1_ ETH DCMI LCD SYS
10/11 2/3 3/4/5/6 SAI1 /OTG2_FS
2/3 /8 /LCD FS

EVEN
PJ8 - - - - - - - - - - - - - - LCD_G1
TOUT

EVEN
PJ9 - - - - - - - - - - - - - - LCD_G2
TOUT

EVEN
PJ10 - - - - - - - - - - - - - - LCD_G3
TOUT

EVEN
PJ11 - - - - - - - - - - - - - - LCD_G4
TOUT
Port J
EVEN
PJ12 - - - - - - - - - - - - - - LCD_B0
TOUT

EVEN
PJ13 - - - - - - - - - - - - - - LCD_B1
TOUT
DS9405 Rev 11

EVEN
PJ14 - - - - - - - - - - - - - - LCD_B2
TOUT

EVEN
PJ15 - - - - - - - - - - - - - - LCD_B3
TOUT

EVEN
PK0 - - - - - - - - - - - - - - LCD_G5
TOUT

EVEN
PK1 - - - - - - - - - - - - - - LCD_G6
TOUT

EVEN
PK2 - - - - - - - - - - - - - - LCD_G7
TOUT

EVEN
PK3 - - - - - - - - - - - - - - LCD_B4

Pinouts and pin description

TOUT
Port K
EVEN
PK4 - - - - - - - - - - - - - - LCD_B5
TOUT

EVEN
PK5 - - - - - - - - - - - - - - LCD_B6
TOUT

EVEN
PK6 - - - - - - - - - - - - - - LCD_B7
TOUT

EVEN
PK7 - - - - - - - - - - - - - - LCD_DE
TOUT
85/240

1. The DCMI_VSYNC alternate function on PG9 is only available on silicon revision 3.

Memory mapping STM32F427xx STM32F429xx

5 Memory mapping

The memory map is shown in Figure 19.

Figure 19. Memory map

Reserved 0xE010 0000 - 0xFFFF FFFF
Cortex-M4 internal
peripherals 0xE000 0000 - 0xE00F FFFF

AHB3 0x6000 0000 - 0xDFFF FFFF

Reserved 0x5006 0C00 - 0x5FFF FFFF

0x5006 0BFF

AHB2
0xFFFF FFFF 512-Mbyte
Block 7
Cortex-M4 0x5000 0000
Internal Reserved 0x4008 0000 - 0x4FFF FFFF
peripherals Reserved 0xE010 0000 - 0xFFFF FFFF 0x4007 FFFF
0xE000 0000 Cortex-M4 internal
peripherals 0xE000 0000 - 0xE00F FFFF
0xDFFF FFFF
512-Mbyte
Block 6 AHB3 0x6000 0000 - 0xDFFF FFFF
FMC
0xD000 0000 0x5006 0C00 - 0x5FFF FFFF
0xCFFF FFFF AHB1
512-Mbyte
Block 5
FMC
0xA000 0000
0x9FFF FFFF
512-Mbyte 0x4002 0000
Block 4 Reserved 0x4001 6C00 - 0x4001 FFFF
FMC bank 3 to
bank 4 0x4001 6BFF
0x8000 0000
0x7FFF FFFF
512-Mbyte
Block 3
FMC bank 1 to
bank 2
0x6000 0000
0x5FFF FFFF
APB2
512-Mbyte
Block 2
Peripherals
0x4000 0000
0x3FFF FFFF
512-Mbyte
Block 1
SRAM Reserved 0x2003 0000 - 0x3FFF FFFF
0x4001 0000
0x2000 0000 SRAM (64 KB aliased
By bit-banding 0x2002 0000 - 0x2002 FFFF Reserved 0x4000 8000 - 0x4000 FFFF
0x1FFF FFFF
0x4000 7FFF
512-Mbyte SRAM (16 KB aliased 0x2001 C000 - 0x2001 FFFF
Block 0 By bit-banding
SRAM SRAM (112 KB aliased 0x2000 0000 - 0x2001 BFFF
By bit-banding
0x0000 0000
Reserved 0x1FFF C010 - 0x1FFF FFFF
Option Bytes 0x1FFF C000 - 0x1FFF C00F
Reserved 0x1FFF 7A10 - 0x1FFF 7FFF
System memory 0x1FFF 0000 - 0x1FFF 7A0F APB1
Reserved 0x1FFE C010 - 0x1FFE FFFF
Option bytes 0x1FFE C000 - 0x1FFF C00F
Reserved 0x1001 0000 - 0x1FFE BFFF
CCM data RAM 0x1000 0000 - 0x1000 FFFF
(64 KB data SRAM)
Reserved 0x0820 0000 - 0x0FFF FFFF
Flash memory 0x0800 0000 - 0x081F FFFF
Reserved 0x0020 0000 - 0x07FF FFFF
Aliased to Flash, system 0x4000 0000
memory or SRAM depending 0x0000 0000 - 0x001F FFFF
on the BOOT pins
MS30424V5

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STM32F427xx STM32F429xx Memory mapping

Table 13. STM32F427xx and STM32F429xx register boundary addresses

Bus Boundary address Peripheral

0xE00F FFFF - 0xFFFF FFFF Reserved

Cortex-M4 0xE000 0000 - 0xE00F FFFF Cortex-M4 internal peripherals
0xD000 0000 - 0xDFFF FFFF FMC bank 6
0xC000 0000 - 0xCFFF FFFF FMC bank 5
0xA000 1000 - 0xBFFF FFFF Reserved
0xA000 0000- 0xA000 0FFF FMC control register
AHB3
0x9000 0000 - 0x9FFF FFFF FMC bank 4
0x8000 0000 - 0x8FFF FFFF FMC bank 3
0x7000 0000 - 0x7FFF FFFF FMC bank 2
0x6000 0000 - 0x6FFF FFFF FMC bank 1
0x5006 0C00- 0x5FFF FFFF Reserved
0x5006 0800 - 0X5006 0BFF RNG
0x5005 0400 - X5006 07FF Reserved
AHB2 0x5005 0000 - 0X5005 03FF DCMI
0x5004 0000- 0x5004 FFFF Reserved
0x5000 0000 - 0X5003 FFFF USB OTG FS

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Memory mapping STM32F427xx STM32F429xx

Table 13. STM32F427xx and STM32F429xx register boundary addresses (continued)

Bus Boundary address Peripheral

0x4008 0000- 0x4FFF FFFF Reserved

0x4004 0000 - 0x4007 FFFF USB OTG HS
0x4002 BC00- 0x4003 FFFF Reserved
0x4002 B000 - 0x4002 BBFF DMA2D
0x4002 9400 - 0x4002 AFFF Reserved
0x4002 9000 - 0x4002 93FF
0x4002 8C00 - 0x4002 8FFF
0x4002 8800 - 0x4002 8BFF ETHERNET MAC
0x4002 8400 - 0x4002 87FF
0x4002 8000 - 0x4002 83FF
0x4002 6800 - 0x4002 7FFF Reserved
0x4002 6400 - 0x4002 67FF DMA2
0x4002 6000 - 0x4002 63FF DMA1
0X4002 5000 - 0X4002 5FFF Reserved
0x4002 4000 - 0x4002 4FFF BKPSRAM
0x4002 3C00 - 0x4002 3FFF Flash interface register
AHB1
0x4002 3800 - 0x4002 3BFF RCC
0X4002 3400 - 0X4002 37FF Reserved
0x4002 3000 - 0x4002 33FF CRC
0x4002 2C00 - 0x4002 2FFF Reserved
0x4002 2800 - 0x4002 2BFF GPIOK
0x4002 2400 - 0x4002 27FF GPIOJ
0x4002 2000 - 0x4002 23FF GPIOI
0x4002 1C00 - 0x4002 1FFF GPIOH
0x4002 1800 - 0x4002 1BFF GPIOG
0x4002 1400 - 0x4002 17FF GPIOF
0x4002 1000 - 0x4002 13FF GPIOE
0X4002 0C00 - 0x4002 0FFF GPIOD
0x4002 0800 - 0x4002 0BFF GPIOC
0x4002 0400 - 0x4002 07FF GPIOB
0x4002 0000 - 0x4002 03FF GPIOA

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Table 13. STM32F427xx and STM32F429xx register boundary addresses (continued)

Bus Boundary address Peripheral

0x4001 6C00- 0x4001 FFFF Reserved

0x4001 6800 - 0x4001 6BFF LCD-TFT
0x4001 5C00 - 0x4001 67FF Reserved
0x4001 5800 - 0x4001 5BFF SAI1
0x4001 5400 - 0x4001 57FF SPI6
0x4001 5000 - 0x4001 53FF SPI5
0x4001 5400 - 0x4001 57FF SPI6
0x4001 5000 - 0x4001 53FF SPI5
0x4001 4C00 - 0x4001 4FFF Reserved
0x4001 4800 - 0x4001 4BFF TIM11
0x4001 4400 - 0x4001 47FF TIM10
0x4001 4000 - 0x4001 43FF TIM9
0x4001 3C00 - 0x4001 3FFF EXTI
APB2
0x4001 3800 - 0x4001 3BFF SYSCFG
0x4001 3400 - 0x4001 37FF SPI4
0x4001 3000 - 0x4001 33FF SPI1
0x4001 2C00 - 0x4001 2FFF SDIO
0x4001 2400 - 0x4001 2BFF Reserved
0x4001 2000 - 0x4001 23FF ADC1 - ADC2 - ADC3
0x4001 1800 - 0x4001 1FFF Reserved
0x4001 1400 - 0x4001 17FF USART6
0x4001 1000 - 0x4001 13FF USART1
0x4001 0800 - 0x4001 0FFF Reserved
0x4001 0400 - 0x4001 07FF TIM8
0x4001 0000 - 0x4001 03FF TIM1

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Memory mapping STM32F427xx STM32F429xx

Table 13. STM32F427xx and STM32F429xx register boundary addresses (continued)

Bus Boundary address Peripheral

0x4000 8000- 0x4000 FFFF Reserved

0x4000 7C00 - 0x4000 7FFF UART8
0x4000 7800 - 0x4000 7BFF UART7
0x4000 7400 - 0x4000 77FF DAC
0x4000 7000 - 0x4000 73FF PWR
0x4000 6C00 - 0x4000 6FFF Reserved
0x4000 6800 - 0x4000 6BFF CAN2
0x4000 6400 - 0x4000 67FF CAN1
0x4000 6000 - 0x4000 63FF Reserved
0x4000 5C00 - 0x4000 5FFF I2C3
0x4000 5800 - 0x4000 5BFF I2C2
0x4000 5400 - 0x4000 57FF I2C1
0x4000 5000 - 0x4000 53FF UART5
0x4000 4C00 - 0x4000 4FFF UART4
0x4000 4800 - 0x4000 4BFF USART3
0x4000 4400 - 0x4000 47FF USART2
0x4000 4000 - 0x4000 43FF I2S3ext
APB1
0x4000 3C00 - 0x4000 3FFF SPI3 / I2S3
0x4000 3800 - 0x4000 3BFF SPI2 / I2S2
0x4000 3400 - 0x4000 37FF I2S2ext
0x4000 3000 - 0x4000 33FF IWDG
0x4000 2C00 - 0x4000 2FFF WWDG
0x4000 2800 - 0x4000 2BFF RTC & BKP Registers
0x4000 2400 - 0x4000 27FF Reserved
0x4000 2000 - 0x4000 23FF TIM14
0x4000 1C00 - 0x4000 1FFF TIM13
0x4000 1800 - 0x4000 1BFF TIM12
0x4000 1400 - 0x4000 17FF TIM7
0x4000 1000 - 0x4000 13FF TIM6
0x4000 0C00 - 0x4000 0FFF TIM5
0x4000 0800 - 0x4000 0BFF TIM4
0x4000 0400 - 0x4000 07FF TIM3
0x4000 0000 - 0x4000 03FF TIM2

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STM32F427xx STM32F429xx Electrical characteristics

6 Electrical characteristics

6.1 Parameter conditions

Unless otherwise specified, all voltages are referenced to VSS.

6.1.1 Minimum and maximum values

Unless otherwise specified the minimum and maximum values are guaranteed in the worst
conditions of ambient temperature, supply voltage and frequencies by tests in production on
100% of the devices with an ambient temperature at TA = 25 °C and TA = TAmax (given by
the selected temperature range).
Data based on characterization results, design simulation and/or technology characteristics
are indicated in the table footnotes and are not tested in production. Based on
characterization, the minimum and maximum values refer to sample tests and represent the
mean value plus or minus three times the standard deviation (mean±3σ).

6.1.2 Typical values

Unless otherwise specified, typical data are based on TA = 25 °C, VDD = 3.3 V (for the
1.7 V ≤VDD ≤ 3.6 V voltage range). They are given only as design guidelines and are not
tested.
Typical ADC accuracy values are determined by characterization of a batch of samples from
a standard diffusion lot over the full temperature range, where 95% of the devices have an
error less than or equal to the value indicated (mean±2σ).

6.1.3 Typical curves

Unless otherwise specified, all typical curves are given only as design guidelines and are
not tested.

6.1.4 Loading capacitor

The loading conditions used for pin parameter measurement are shown in Figure 20.

6.1.5 Pin input voltage

The input voltage measurement on a pin of the device is described in Figure 21.

Figure 20. Pin loading conditions Figure 21. Pin input voltage

MCU pin MCU pin

C = 50 pF VIN

MS19011V2 MS19010V2

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Electrical characteristics STM32F427xx STM32F429xx

6.1.6 Power supply scheme

Figure 22. Power supply scheme

VBAT
Backup circuitry
VBAT = Power (OSC32K,RTC,
1.65 to 3.6V switch Wakeup logic
Backup registers,
backup RAM)

Level shifter
OUT
IO
GPIOs
Logic
IN
VCAP_1 Kernel logic
2 × 2.2 μF VCAP_2 (CPU, digital
& RAM)
VDD VDD
1/2/...14/15
Voltage
15 × 100 nF VSS regulator
+ 1 × 4.7 μF 1/2/...14/15

BYPASS_REG Flash memory

Reset
PDR_ON controller
VDD
VDDA
VREF
VREF+
Analog:
100 nF 100 nF VREF- ADC RCs,
+ 1 μF + 1 μF PLL,..
VSSA

MS19911V3

1. To connect BYPASS_REG and PDR_ON pins, refer to Section 3.17: Power supply supervisor and Section 3.18: Voltage
regulator
2. The two 2.2 µF ceramic capacitors should be replaced by two 100 nF decoupling capacitors when the voltage regulator is
OFF.
3. The 4.7 µF ceramic capacitor must be connected to one of the VDD pins.
4. VDDA=VDD and VSSA=VSS.
Caution: Each power supply pair (VDD/VSS, VDDA/VSSA ...) must be decoupled with filtering ceramic
capacitors as shown above. These capacitors must be placed as close as possible to, or
below, the appropriate pins on the underside of the PCB to ensure good operation of the
device. It is not recommended to remove filtering capacitors to reduce PCB size or cost.
This might cause incorrect operation of the device.

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STM32F427xx STM32F429xx Electrical characteristics

6.1.7 Current consumption measurement

Figure 23. Current consumption measurement scheme

IDD_VBAT
VBAT

IDD
VDD

VDDA

ai14126

6.2 Absolute maximum ratings

Stresses above the absolute maximum ratings listed in Table 14: Voltage characteristics,
Table 15: Current characteristics, and Table 16: Thermal characteristics may cause
permanent damage to the device. These are stress ratings only and functional operation of
the device at these conditions is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
Device mission profile (application conditions) is compliant with JEDEC JESD47
Qualification Standard, extended mission profiles are available on demand.

Table 14. Voltage characteristics

Symbol Ratings Min Max Unit

External main supply voltage (including VDDA, VDD

VDD–VSS − 0.3 4.0
and VBAT)(1)
min
(min(VDD
Input voltage on FT pins(2) VSS − 0.3
VDDA)+3.
V
6V, 5.5V
VIN
Input voltage on TTa pins VSS − 0.3 4.0
Input voltage on any other pin VSS − 0.3 4.0
Input voltage on BOOT0 pin VSS 9.0
|∆VDDx| Variations between different VDD power pins - 50
Variations between all the different ground pins mV
|VSSX -VSS| - 50
including VREF-
see Section 6.3.15:
Absolute maximum
VESD(HBM) Electrostatic discharge voltage (human body model)
ratings (electrical
sensitivity)
1. All main power (VDD, VDDA) and ground (VSS, VSSA) pins must always be connected to the external
power supply, in the permitted range.

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Electrical characteristics STM32F427xx STM32F429xx

2. VIN maximum value must always be respected. Refer to Table 15 for the values of the maximum allowed
injected current.

Table 15. Current characteristics

Symbol Ratings Max. Unit
(1)
∑IVDD Total current into sum of all VDD_x power lines (source) 270
∑IVSS Total current out of sum of all VSS_x ground lines (sink)(1) − 270
(1)
IVDD Maximum current into each VDD_x power line (source) 100
(1)
IVSS Maximum current out of each VSS_x ground line (sink) − 100
Output current sunk by any I/O and control pin 25
IIO
Output current sourced by any I/Os and control pin − 25
(2) mA
Total output current sunk by sum of all I/O and control pins 120
∑IIO
Total output current sourced by sum of all I/Os and control pins(2) − 120
(4)
Injected current on FT pins
− 5/+0
IINJ(PIN) (3) Injected current on NRST and BOOT0 pins (4)

Injected current on TTa pins(5) ±5

(5)
∑IINJ(PIN) Total injected current (sum of all I/O and control pins)(6) ±25
1. All main power (VDD, VDDA) and ground (VSS, VSSA) pins must always be connected to the external power supply, in the
permitted range.
2. This current consumption must be correctly distributed over all I/Os and control pins. The total output current must not be
sunk/sourced between two consecutive power supply pins referring to high pin count LQFP packages.
3. Negative injection disturbs the analog performance of the device. See note in Section 6.3.21: 12-bit ADC characteristics.
4. Positive injection is not possible on these I/Os and does not occur for input voltages lower than the specified maximum
value.
5. A positive injection is induced by VIN>VDDA while a negative injection is induced by VIN<VSS. IINJ(PIN) must never be
exceeded. Refer to Table 14 for the values of the maximum allowed input voltage.
6. When several inputs are submitted to a current injection, the maximum ΣIINJ(PIN) is the absolute sum of the positive and
negative injected currents (instantaneous values).

Table 16. Thermal characteristics

Symbol Ratings Value Unit

TSTG Storage temperature range − 65 to +150 °C

TJ Maximum junction temperature 125 °C

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STM32F427xx STM32F429xx Electrical characteristics

6.3 Operating conditions

6.3.1 General operating conditions

Table 17. General operating conditions

Symbol Parameter Conditions(1) Min Typ Max Unit

Power Scale 3 (VOS[1:0] bits in

PWR_CR register = 0x01), Regulator 0 - 120
ON, over-drive OFF
Over-
Power Scale 2 (VOS[1:0] bits drive OFF - 144
in PWR_CR register = 0x10), 0
fHCLK Internal AHB clock frequency Regulator ON Over-
- 168
drive ON
Over-
Power Scale 1 (VOS[1:0] bits drive OFF - 168 MHz
in PWR_CR register= 0x11), 0
Regulator ON Over-
- 180
drive ON
Over-drive OFF 0 - 42
fPCLK1 Internal APB1 clock frequency
Over-drive ON 0 - 45
Over-drive OFF 0 - 84
fPCLK2 Internal APB2 clock frequency
Over-drive ON 0 - 90
VDD Standard operating voltage 1.7(2) - 3.6
Analog operating voltage
1.7(2) - 2.4
VDDA (ADC limited to 1.2 M samples)
(3)(4) Must be the same potential as VDD(5) V
Analog operating voltage
2.4 - 3.6
(ADC limited to 2.4 M samples)
VBAT Backup operating voltage 1.65 - 3.6
Power Scale 3 ((VOS[1:0] bits in
PWR_CR register = 0x01), 120 MHz 1.08 1.14 1.20
HCLK max frequency
Power Scale 2 ((VOS[1:0] bits in
PWR_CR register = 0x10), 144 MHz
Regulator ON: 1.2 V internal 1.20 1.26 1.32
HCLK max frequency with over-drive
voltage on VCAP_1/VCAP_2 pins
OFF or 168 MHz with over-drive ON
V12 Power Scale 1 ((VOS[1:0] bits in V
PWR_CR register = 0x11), 168 MHz
1.26 1.32 1.40
HCLK max frequency with over-drive
OFF or 180 MHz with over-drive ON
Regulator OFF: 1.2 V external Max frequency 120 MHz 1.10 1.14 1.20
voltage must be supplied from
Max frequency 144 MHz 1.20 1.26 1.32
external regulator on
VCAP_1/VCAP_2 pins(6) Max frequency 168 MHz 1.26 1.32 1.38

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Electrical characteristics STM32F427xx STM32F429xx

Table 17. General operating conditions (continued)

Symbol Parameter Conditions(1) Min Typ Max Unit

Input voltage on RST and FT 2 V ≤ VDD ≤ 3.6 V − 0.3 - 5.5

pins(7) VDD ≤ 2 V − 0.3 - 5.2
VIN VDDA+ V
Input voltage on TTa pins − 0.3 -
0.3
Input voltage on BOOT0 pin 0 - 9
LQFP100 - - 465
WLCSP143 - - 641
LQFP144 - - 500
Power dissipation at TA = 85 °C UFBGA169 - - 385
PD for suffix 6 or TA = 105 °C for mW
suffix 7(8) LQFP176 - - 526
UFBGA176 - - 513
LQFP208 - - 1053
TFBGA216 - - 690

Ambient temperature for 6 suffix Maximum power dissipation − 40 - 85

°C
version Low power dissipation(9) − 40 - 105
TA
Ambient temperature for 7 suffix Maximum power dissipation − 40 - 105
°C
version Low power dissipation(9) − 40 - 125
6 suffix version − 40 - 105
TJ Junction temperature range °C
7 suffix version − 40 - 125
1. The overdrive mode is not supported at the voltage ranges from 1.7 to 2.1 V.
2. VDD/VDDA minimum value of 1.7 V is obtained with the use of an external power supply supervisor (refer to Section 3.17.2:
Internal reset OFF).
3. When the ADC is used, refer to Table 75: ADC characteristics.
4. If a VREF+ pin is present, it must respect the following condition: VDDA-VREF+ < 1.2 V.
5. It is recommended to power VDD and VDDA from the same source. A maximum difference of 300 mV between VDD and VDDA
can be tolerated during power-up and power-down operation.
6. The overdrive mode is not supported when the internal regulator is OFF.
7. To sustain a voltage higher than VDD+0.3, the internal pull-up and pull-down resistors must be disabled
8. If TA is lower, higher PD values are allowed as long as TJ does not exceed TJmax.
9. In low-power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax.

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Table 18. Limitations depending on the operating power supply range

Maximum Flash
Maximum HCLK
Operating memory access Possible Flash
frequency vs Flash
power supply ADC operation frequency with I/O operation memory
memory wait states
range no wait states (1)(2) operations
(fFlashmax)

168 MHz with 8 wait 8-bit erase and

VDD =1.7 to Conversion time No I/O
20 MHz(4) states and over-drive program
2.1 V(3) up to 1.2 Msps compensation
OFF operations only
180 MHz with 8 wait 16-bit erase and
VDD = 2.1 to Conversion time No I/O
22 MHz states and over-drive program
2.4 V up to 1.2 Msps compensation
ON operations
180 MHz with 7 wait 16-bit erase and
VDD = 2.4 to Conversion time I/O compensation
24 MHz states and over-drive program
2.7 V up to 2.4 Msps works
ON operations
180 MHz with 5 wait 32-bit erase and
VDD = 2.7 to Conversion time I/O compensation
30 MHz states and over-drive program
3.6 V(5) up to 2.4 Msps works
ON operations
1. Applicable only when the code is executed from flash memory. When the code is executed from RAM, no wait state is
required.
2. Thanks to the ART accelerator and the 128-bit flash memory, the number of wait states given here does not impact the
execution speed from flash memory since the ART accelerator allows to achieve a performance equivalent to 0 wait state
program execution.
3. The VDD/VDDA minimum value of 1.7 V is obtained with the use of an external power supply supervisor (refer to
Section 3.17.2: Internal reset OFF).
4. Prefetch is not available.
5. The voltage range for USB full speed PHYs can drop down to 2.7 V. However, the electrical characteristics of D- and D+
pins are degraded between 2.7 and 3 V.

6.3.2 VCAP1/VCAP2 external capacitor

Stabilization for the main regulator is achieved by connecting an external capacitor CEXT to
the VCAP1/VCAP2 pins. CEXT is specified in Table 19.

Figure 24. External capacitor CEXT

ESR

R Leak
MS19044V2

1. Legend: ESR is the equivalent series resistance.

Table 19. VCAP1/VCAP2 operating conditions(1)

Symbol Parameter Conditions

CEXT Capacitance of external capacitor 2.2 µF

ESR ESR of external capacitor <2Ω
1. When bypassing the voltage regulator, the two 2.2 µF VCAP capacitors are not required and should be
replaced by two 100 nF decoupling capacitors.

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6.3.3 Operating conditions at power-up / power-down (regulator ON)

Subject to general operating conditions for TA.

Table 20. Operating conditions at power-up / power-down (regulator ON)

Symbol Parameter Min Max Unit

VDD rise time rate 20 ∞

tVDD µs/V
VDD fall time rate 20 ∞

6.3.4 Operating conditions at power-up / power-down (regulator OFF)

Subject to general operating conditions for TA.

Table 21. Operating conditions at power-up / power-down (regulator OFF)(1)

Symbol Parameter Conditions Min Max Unit

VDD rise time rate Power-up 20 ∞

tVDD
VDD fall time rate Power-down 20 ∞
µs/V
VCAP_1 and VCAP_2 rise time rate Power-up 20 ∞
tVCAP
VCAP_1 and VCAP_2 fall time rate Power-down 20 ∞
1. To reset the internal logic at power-down, a reset must be applied on pin PA0 when VDD reaches below
1.08 V.

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6.3.5 Reset and power control block characteristics

The parameters given in Table 22 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 17.

Table 22. Reset and power control block characteristics

Symbol Parameter Conditions Min Typ Max Unit

PLS[2:0]=000 (rising edge) 2.09 2.14 2.19 V

PLS[2:0]=000 (falling edge) 1.98 2.04 2.08 V
PLS[2:0]=001 (rising edge) 2.23 2.30 2.37 V
PLS[2:0]=001 (falling edge) 2.13 2.19 2.25 V
PLS[2:0]=010 (rising edge) 2.39 2.45 2.51 V
PLS[2:0]=010 (falling edge) 2.29 2.35 2.39 V
PLS[2:0]=011 (rising edge) 2.54 2.60 2.65 V

Programmable voltage PLS[2:0]=011 (falling edge) 2.44 2.51 2.56 V

VPVD
detector level selection PLS[2:0]=100 (rising edge) 2.70 2.76 2.82 V
PLS[2:0]=100 (falling edge) 2.59 2.66 2.71 V
PLS[2:0]=101 (rising edge) 2.86 2.93 2.99 V
PLS[2:0]=101 (falling edge) 2.75 2.84 2.92 V
PLS[2:0]=110 (rising edge) 2.96 3.03 3.10 V
PLS[2:0]=110 (falling edge) 2.85 2.93 2.99 V
PLS[2:0]=111 (rising edge) 3.07 3.14 3.21 V
PLS[2:0]=111 (falling edge) 2.95 3.03 3.09 V
VPVDhyst(1) PVD hysteresis - - 100 - mV

Power-on/power-down Falling edge 1.60 1.68 1.76 V

VPOR/PDR
reset threshold Rising edge 1.64 1.72 1.80 V
(1)
VPDRhyst PDR hysteresis - - 40 - mV

Brownout level 1 Falling edge 2.13 2.19 2.24 V

VBOR1
threshold Rising edge 2.23 2.29 2.33 V

Brownout level 2 Falling edge 2.44 2.50 2.56 V

VBOR2
threshold Rising edge 2.53 2.59 2.63 V

Brownout level 3 Falling edge 2.75 2.83 2.88 V

VBOR3
threshold Rising edge 2.85 2.92 2.97 V
VBORhyst(1) BOR hysteresis - - 100 - mV
TRSTTEMPO
(1)(2) POR reset temporization - 0.5 1.5 3.0 ms

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Table 22. Reset and power control block characteristics (continued)

Symbol Parameter Conditions Min Typ Max Unit

InRush current on
voltage regulator power-
IRUSH(1) - - 160 200 mA
on (POR or wakeup
from Standby)
InRush energy on
voltage regulator power- VDD = 1.7 V, TA = 105 °C,
ERUSH(1) - - 5.4 µC
on (POR or wakeup IRUSH = 171 mA for 31 µs
from Standby)
1. Specified by design.
2. The reset temporization is measured from the power-on (POR reset or wake-up from VBAT) to the instant
when the first instruction is read by the user application code.

6.3.6 Overdrive switching characteristics

When the overdrive mode switches from enabled to disabled or disabled to enabled, the
system clock is stalled during the internal voltage set-up.
The overdrive switching characteristics are given in Table 23. They are subject to general
operating conditions for TA.

Table 23. Over-drive switching characteristics(1)

Symbol Parameter Conditions Min Typ Max Unit

HSI - 45 -
HSE max for 4 MHz
Over_drive switch 45 - 100
Tod_swen and min for 26 MHz
enable time
External HSE
- 40 -
50 MHz
µs
HSI - 20 -
HSE max for 4 MHz
Over_drive switch 20 - 80
Tod_swdis and min for 26 MHz.
disable time
External HSE
- 15 -
50 MHz
1. Specified by design.

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6.3.7 Supply current characteristics

The current consumption is a function of several parameters and factors such as the
operating voltage, ambient temperature, I/O pin loading, device software configuration,
operating frequencies, I/O pin switching rate, program location in memory and executed
binary code.
The current consumption is measured as described in Figure 23: Current consumption
measurement scheme.
All the run-mode current consumption measurements given in this section are performed
with a reduced code that gives a consumption equivalent to CoreMark code.

Typical and maximum current consumption

The MCU is placed under the following conditions:
• All I/O pins are in input mode with a static value at VDD or VSS (no load).
• All peripherals are disabled except if it is explicitly mentioned.
• The flash memory access time is adjusted both to fHCLK frequency and VDD range (see
Table 18: Limitations depending on the operating power supply range).
• Regulator ON
• The voltage scaling and overdrive mode are adjusted to fHCLK frequency as follows:
– Scale 3 for fHCLK ≤ 120 MHz
– Scale 2 for 120 MHz < fHCLK ≤ 144 MHz
– Scale 1 for 144 MHz < fHCLK ≤ 180 MHz. The overdrive is only ON at 180 MHz.
• The system clock is HCLK, fPCLK1 = fHCLK/4, and fPCLK2 = fHCLK/2.
• The external clock frequency is 4 MHz and PLL is ON when fHCLK is higher than
25 MHz.
• The maximum values are obtained for VDD = 3.6 V and a maximum ambient
temperature (TA), and the typical values for TA= 25 °C and VDD = 3.3 V unless
otherwise specified.

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Table 24. Typical and maximum current consumption in Run mode, code with data processing
running from Flash memory (ART accelerator enabled except prefetch) or RAM(1)
Max(2)
Symbol Parameter Conditions fHCLK (MHz) Typ Unit
TA = TA = TA =
25 °C 85 °C 105 °C

180 98 104(5) 123 141(5)

168 89 98(5) 116 133(5)
150 75 84 100 115
144 72 81 96 112
120 54 58 72 85
90 43 45 56 66
All
Peripherals 60 29 30 52 62
enabled(3)(4)
30 16 20 34 46
25 13 16 30 43
16 11 13 27 39
8 5 9 23 36
4 4 8 21 34
Supply 2 2 7 20 33
IDD current in mA
RUN mode 180 44 47(5) 69 87(5)
168 41 45(5) 66 83(5)
150 36 39 57 73
144 33 37 56 72
120 25 29 43 56
90 20 23 41 53
All
Peripherals 60 14 16 34 45
disabled(3)
30 8 12 26 39
25 7 10 24 37
16 7 9 22 35
8 3 7 21 34
4 3 6 20 33
2 2 6 20 33
1. Code and data processing running from SRAM1 using boot pins.
2. Evaluated by characterization.
3. When analog peripheral blocks such as ADCs, DACs, HSE, LSE, HSI, or LSI are ON, an additional power consumption
should be considered.
4. When the ADC is ON (ADON bit set in the ADC_CR2 register), add an additional power consumption of 1.6 mA per ADC
for the analog part.
5. Evaluated by test in production.

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Table 25. Typical and maximum current consumption in Run mode, code with data processing
running from Flash memory (ART accelerator disabled)
Max(1)
Symbol Parameter Conditions fHCLK (MHz) Typ Unit
TA=
TA=85 °C TA=105 °C
25 °C

180 103 112 140 151

168 98 107 126 144
150 87 95 112 128
144 85 92 108 124
120 66 71 85 99
90 54 58 69 80
All Peripherals
60 37 39 47 55
enabled(2)(3)
30 20 24 39 51
25 17 21 35 48
16 12 16 30 42
8 7 11 24 37
4 5 8 22 35
Supply 2 3 7 21 34
IDD current in mA
RUN mode 180 57 62 87 106
168 50 54 76 93
150 46 50 70 86
144 45 49 68 84
120 36 41 56 69
90 29 34 46 57
All Peripherals
60 21 24 33 41
disabled(3)
30 13 17 31 44
25 11 15 28 41
16 8 12 25 38
8 5 9 23 35
4 4 7 21 34
2 3 6.5 20 33
1. Evaluated by characterization unless otherwise specified.
2. When analog peripheral blocks such as ADCs, DACs, HSE, LSE, HSI, or LSI are ON, an additional power consumption
should be considered.
3. When the ADC is ON (ADON bit set in the ADC_CR2 register), add an additional power consumption of 1.6 mA per ADC for
the analog part.

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Table 26. Typical and maximum current consumption in Sleep mode

Max(1)
Symbol Parameter Conditions fHCLK (MHz) Typ Unit
TA = TA = TA =
25 °C 85 °C 105 °C

180 78 89(3) 110 130(3)

168 66 75(3) 93 110(3)
150 56 61 80 96
144 54 58 78 94
120 40 44 59 72
90 32 34 46 56
All
Peripherals 60 22 23 31 45
enabled(2)
30 10 16 30 43
25 9 14 28 40
16 5 12 25 40
8 3 8 22 35
4 3 7 21 34
Supply 2 2 6.5 20 33
IDD current in mA
(3)
Sleep mode 180 21 26 54 76(3)
168 16 20(3) 41 58(3)
150 14 17 36 52
144 13 16.5 35 51
120 10 14 28 41
90 8 13 26 37
All
Peripherals 60 6 9 24 37
disabled
30 5 8 22 35
25 3 7 21 34
16 3 7 21 34
8 2 6 20 33
4 2 6 20 33
2 2 6 20 33
1. Evaluated by characterization unless otherwise specified.
2. When analog peripheral blocks such as ADCs, DACs, HSE, LSE, HSI, or LSI are ON, an additional power consumption
should be considered.
3. Based on characterization, tested in production.

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Table 27. Typical and maximum current consumptions in Stop mode

Max(1)
Typ
Symbol Parameter Conditions VDD = 3.6 V Unit
TA = TA = TA = TA =
25 °C 25 °C 85 °C 105 °C
Flash memory in Stop mode, all
Supply current in Stop oscillators OFF, no independent 0.40 1.50 14.00 25.00
mode with voltage watchdog
regulator in main Flash memory in Deep power
regulator mode down mode, all oscillators OFF, no 0.35 1.50 14.00 25.00
IDD_STOP_NM independent watchdog
(normal mode) Flash memory in Stop mode, all
Supply current in Stop oscillators OFF, no independent 0.29 1.10 10.00 18.00
mode with voltage watchdog
regulator in Low Power Flash memory in Deep power
regulator mode down mode, all oscillators OFF, no 0.23 1.10 10.00 18.00 mA
independent watchdog
Supply current in Stop
Flash memory in Deep power
mode with voltage
down mode, main regulator in
regulator in main 0.19 0.50 6.00 9.00
under-drive mode, all oscillators
regulator and under-
IDD_STOP_UDM drive mode OFF, no independent watchdog
(under-drive
mode) Supply current in Stop
Flash memory in Deep power
mode with voltage
down mode, Low Power regulator
regulator in Low Power 0.10 0.40 4.00 7.00
in under-drive mode, all oscillators
regulator and under-
OFF, no independent watchdog
drive mode
1. Data based on characterization, tested in production.

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Table 28. Typical and maximum current consumptions in Standby mode

Typ(1) Max(2)

TA = TA = TA =
TA = 25 °C
Symbol Parameter Conditions 25 °C 85 °C 105 °C Unit

VDD = VDD= VDD =

VDD = 3.6 V
1.7 V 2.4 V 3.3 V
Backup SRAM ON, low-speed
2.80 3.00 3.60 7.00 19.00 36.00
oscillator (LSE) and RTC ON
Backup SRAM OFF, low-
Supply current speed oscillator (LSE) and 2.30 2.60 3.10 6.00 16.00 31.00
IDD_STBY in Standby RTC ON µA
mode Backup SRAM ON, RTC and
2.30 2.50 2.90 6.00(3) 18.00(3) 35.00(3)
LSE OFF
Backup SRAM OFF, RTC and
1.70 1.90 2.20 5.00(3) 15.00(3) 30.00(3)
LSE OFF
1. The typical current consumption values are given with PDR OFF (internal reset OFF). When the PDR is OFF (internal reset
OFF), the typical current consumption is reduced by an additional 1.2 µA.
2. Evaluated by characterization, not tested in production unless otherwise specified.
3. Based on characterization, tested in production.

Table 29. Typical and maximum current consumptions in VBAT mode

Typ Max(2)

TA =
TA = 25 °C TA = 85 °C
Symbol Parameter Conditions(1) 105 °C Unit

VBAT = VBAT= VBAT =

VBAT = 3.6 V
1.7 V 2.4 V 3.3 V

Backup SRAM ON, low-speed

1.28 1.40 1.62 6 11
oscillator (LSE) and RTC ON
Backup SRAM OFF, low-speed
Backup 0.66 0.76 0.97 3 5
oscillator (LSE) and RTC ON
IDD_VBAT domain supply µA
current Backup SRAM ON, RTC and
0.70 0.72 0.74 5 10
LSE OFF
Backup SRAM OFF, RTC and
0.10 0.10 0.10 2 4
LSE OFF
1. Crystal used: Abracon ABS07-120-32.768 kHz-T with a CL of 6 pF for typical values.
2. Evaluated by characterization.

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Figure 25. Typical VBAT current consumption (LSE and RTC ON/backup RAM OFF)

2.5
IDD_VBAT (μA)

1.65V
1.5 1.7V
1.8V
2V
1 2.4V
2.7V
3V
0.5
3.3V
3.6V
0
0°C 25°C 55°C 85°C 105°C
Temperature
MS30490V1

Figure 26. Typical VBAT current consumption (LSE and RTC ON/backup RAM ON)

4
1.65V
IDD_VBAT (μA)

1.7V
3 1.8V
2V
2 2.4V
2.7V
3V
1
3.3V
3.6V
0
0°C 25°C 55°C 85°C 105°C
Temperature
MS30491V1

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Additional current consumption

The MCU is placed under the following conditions:
• All I/O pins are configured in analog mode.
• The flash memory access time is adjusted to fHCLK frequency.
• The voltage scaling is adjusted to fHCLK frequency as follows:
– Scale 3 for fHCLK ≤ 120 MHz,
– Scale 2 for 120 MHz < fHCLK ≤ 144 MHz
– Scale 1 for 144 MHz < fHCLK ≤ 180 MHz. The overdrive is only ON at 180 MHz.
• The system clock is HCLK, fPCLK1 = fHCLK/4, and fPCLK2 = fHCLK/2.
• HSE crystal clock frequency is 25 MHz.
• When the regulator is OFF, V12 is provided externally as described in Table 17:
General operating conditions
• TA= 25 °C.

Table 30. Typical current consumption in Run mode, code with data processing running from
Flash memory or RAM, regulator ON (ART accelerator enabled except prefetch),
VDD=1.7 V(1)
Symbol Parameter Conditions fHCLK (MHz) Typ Unit

168 88.2
150 74.3
144 71.3

All Peripheral 120 52.9

enabled 90 42.6
60 28.6
30 15.7
Supply current in 25 12.3
IDD RUN mode from mA
VDD supply 168 40.6
150 30.6
144 32.6

All Peripheral 120 24.7

disabled 90 19.7
60 13.6
30 7.7
25 6.7
1. When peripherals are enabled, the power consumption corresponding to the analog part of the peripherals (such as ADC,
or DAC) is not included.

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Table 31. Typical current consumption in Run mode, code with data processing running
from Flash memory, regulator OFF (ART accelerator enabled except prefetch)(1)
VDD=3.3 V VDD=1.7 V
fHCLK
Symbol Parameter Conditions Unit
(MHz)
IDD12 IDD IDD12 IDD

168 77.8 1.3 76.8 1.0

150 70.8 1.3 69.8 1.0
144 64.5 1.3 63.6 1.0

All Peripherals 120 49.9 1.2 49.3 0.9

enabled 90 39.2 1.3 38.7 1.0
60 27.2 1.2 26.8 0.9
30 15.6 1.2 15.4 0.9
Supply current in
RUN mode from 25 13.6 1.2 13.5 0.9
IDD12 / IDD mA
V12 and VDD 168 38.2 1.3 37.0 1.0
supply
150 34.6 1.3 33.4 1.0
144 31.3 1.3 30.3 1.0

All Peripherals 120 24.0 1.2 23.2 0.9

disabled 90 18.1 1.4 18.0 1.0
60 12.9 1.2 12.5 0.9
30 7.2 1.2 6.9 0.9
25 6.3 1.2 6.1 0.9
1. When peripherals are enabled, the power consumption corresponding to the analog part of the peripherals (such as ADC,
or DAC) is not included.

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Table 32. Typical current consumption in Sleep mode, regulator ON, VDD=1.7 V(1)
Symbol Parameter Conditions fHCLK (MHz) Typ Unit

168 65.5
150 55.5
144 53.5
120 39.0
All Peripherals enabled
90 31.6
60 21.7
30 9.8

Supply current in Sleep 25 8.8

IDD mA
mode from VDD supply 168 15.7
150 13.7
144 12.7
120 9.7
All Peripherals disabled
90 7.7
60 5.7
30 4.7
25 2.8
1. When peripherals are enabled, the power consumption corresponding to the analog part of the peripherals (such as ADC,
or DAC) is not included.

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Table 33. Tyical current consumption in Sleep mode, regulator OFF(1)

VDD=3.3 V VDD=1.7 V Unit
Symbol Parameter Conditions fHCLK (MHz)
IDD12 IDD IDD12 IDD

180 61.5 1.4 - -

168 59.4 1.3 59.4 1.0
150 53.9 1.3 53.9 1.0
144 49.0 1.3 49.0 1.0
All Peripherals
120 38.0 1.2 38.0 0.9
enabled
90 29.3 1.4 29.3 1.1
60 20.2 1.2 20.2 0.9
30 11.9 1.2 11.9 0.9
Supply current
in Sleep mode 25 10.4 1.2 10.4 0.9
IDD12/IDD mA
from V12 and 180 14.9 1.4 - -
VDD supply
168 14.0 1.3 14.0 1.0
150 12.6 1.3 12.6 1.0
144 11.5 1.3 11.5 1.0
All Peripherals
120 8.7 1.2 8.7 0.9
disabled
90 7.1 1.4 7.1 1.1
60 5.0 1.2 5.0 0.9
30 3.1 1.2 3.1 0.9
25 2.8 1.2 2.8 0.9
1. When peripherals are enabled, the power consumption corresponding to the analog part of the peripherals (such as ADC,
or DAC) is not included.

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I/O system current consumption

The current consumption of the I/O system has two components: static and dynamic.
I/O static current consumption
All the I/Os used as inputs with pull resistors generate current consumption when the pin is
externally held to the opposite level. The value of this current consumption can be simply
computed by using the pull-up/pull-down resistor values given in Table 57: I/O static
characteristics.
For the output pins, any internal or external pull-up or pull-down and external load must also
be considered to estimate the current consumption.
Additional I/O current consumption is due to I/Os configured as inputs if an intermediate
voltage level is externally applied. This current consumption is caused by the input Schmitt
trigger circuits used to discriminate the input value. Unless this specific configuration is
required by the application, this supply current consumption can be avoided by configuring
these I/Os in analog mode. This is notably the case of ADC input pins, which should be
configured as analog inputs.
Caution: Any floating input pin can also settle to an intermediate voltage level or switch inadvertently,
as a result of external electromagnetic noise. To avoid current consumption related to
floating pins, they must either be configured in analog mode, or forced internally to a definite
digital value. This can be done either by using pull-up/down resistors or by configuring the
pins in output mode.
I/O dynamic current consumption
In addition to the internal peripheral current consumption (see Table 35: Peripheral current
consumption), the I/Os used by an application also contribute to the current consumption.
When an I/O pin switches, it uses the current from the MCU supply voltage to supply the I/O
pin circuitry and to charge/discharge the capacitive load internal or external connected to
the pin:

I SW = V DD × f SW × C

where
ISW is the current sunk by a switching I/O to charge/discharge the capacitive load
VDD is the MCU supply voltage
fSW is the I/O switching frequency
C is the total capacitance seen by the I/O pin: C = CINT+ CEXT
The test pin is configured in push-pull output mode and is toggled by software at a fixed
frequency.

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Table 34. Switching output I/O current consumption(1)

I/O toggling
Symbol Parameter Conditions frequency Typ Unit
(fsw)

2 MHz 0.0
8 MHz 0.2
25 MHz 0.6
VDD = 3.3 V
50 MHz 1.1
C= CINT(2)
60 MHz 1.3
84 MHz 1.8

I/O switching 90 MHz 1.9

IDDIO mA
Current 2 MHz 0.1
8 MHz 0.4
VDD = 3.3 V 25 MHz 1.23
CEXT = 0 pF
50 MHz 2.43
C = CINT + CEXT
+ CS 60 MHz 2.93
84 MHz 3.86
90 MHz 4.07
2 MHz 0.18
8 MHz 0.67
VDD = 3.3 V 25 MHz 2.09
CEXT = 10 pF
50 MHz 3.6
C = CINT + CEXT
+ CS 60 MHz 4.5
84 MHz 7.8
90 MHz 9.8

I/O switching 2 MHz 0.26

IDDIO mA
Current VDD = 3.3 V 8 MHz 1.01
CEXT = 22 pF
25 MHz 3.14
C = CINT + CEXT
+ CS 50 MHz 6.39
60 MHz 10.68
2 MHz 0.33
VDD = 3.3 V
CEXT = 33 pF 8 MHz 1.29
C = CINT + Cext 25 MHz 4.23
+ CS
50 MHz 11.02
1. CS is the PCB board capacitance including the pad pin. CS = 7 pF (estimated value).
2. This test is performed by cutting the LQFP176 package pin (pad removal).

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On-chip peripheral current consumption

The MCU is placed under the following conditions:
• At startup, all I/O pins are in analog input configuration.
• All peripherals are disabled unless otherwise mentioned.
• I/O compensation cell enabled.
• The ART accelerator is ON.
• Scale 1 mode selected, internal digital voltage V12 = 1.32 V.
• HCLK is the system clock. fPCLK1 = fHCLK/4, and fPCLK2 = fHCLK/2.
The given value is calculated by measuring the difference of current consumption
– with all the peripherals clocked off
– with only one peripheral clocked on
– fHCLK = 180 MHz (scale1 + overdrive ON), fHCLK = 144 MHz (scale 2),
fHCLK = 120 MHz (scale 3)"
• Ambient operating temperature is 25 °C and VDD=3.3 V.

Table 35. Peripheral current consumption

IDD( Typ)(1)
Peripheral Unit
Scale 1 Scale 2 Scale 3

GPIOA 2.50 2.36 2.08

GPIOB 2.56 2.36 2.08
GPIOC 2.44 2.29 2.00
GPIOD 2.50 2.36 2.08
GPIOE 2.44 2.29 2.00
GPIOF 2.44 2.29 2.00
GPIOG 2.39 2.22 2.00
GPIOH 2.33 2.15 1.92
GPIOI 2.39 2.22 2.00
AHB1 GPIOJ 2.33 2.15 1.92
(up to µA/MHz
GPIOK 2.33 2.15 1.92
180 MHz)
OTG_HS+ULPI 27.00 24.86 21.92
CRC 0.44 0.42 0.33
BKPSRAM 0.78 0.69 0.58
DMA1 25.33 23.26 20.50
DMA2 24.72 22.71 20.00
DMA2D 28.50 26.32 23.33
ETH_MAC
ETH_MAC_TX
21.56 20.07 17.75
ETH_MAC_RX
ETH_MAC_PTP

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Table 35. Peripheral current consumption (continued)

IDD( Typ)(1)
Peripheral Unit
Scale 1 Scale 2 Scale 3

OTG_FS 25.67 26.67 23.58

AHB2
(up to DCMI 3.72 3.40 3.00 µA/MHz
180 MHz)
RNG 2.28 2.36 2.17
AHB3
(up to FMC 21.39 19.79 17.50 µA/MHz
180 MHz)

Bus matrix(2) 14.06 13.19 11.75 µA/MHz

TIM2 17.56 16.42 14.47

TIM3 14.22 13.36 11.80
TIM4 14.89 13.64 12.13
TIM5 17.33 16.42 14.47
TIM6 2.89 2.53 2.47
TIM7 3.11 2.81 2.47
TIM12 7.33 6.97 6.13
TIM13 4.89 4.47 4.13
TIM14 5.56 5.31 4.80
PWR 11.11 10.31 9.13
USART2 4.22 3.92 3.47
USART3 4.44 4.19 3.80
UART4 4.00 3.92 3.47
APB1
(up to UART5 4.00 3.92 3.47 µA/MHz
45 MHz)
UART7 4.00 3.92 3.47
UART8 3.78 3.92 3.47
I2C1 4.00 3.92 3.47
I2C2 4.00 3.92 3.47
I2C3 4.00 3.92 3.47
(3)
SPI2 3.11 3.08 2.80
SPI3(3) 3.56 3.36 3.13
I2S2 2.89 2.81 2.47
I2S3 3.33 3.08 2.80
CAN1 6.89 6.42 5.80
CAN2 6.67 6.14 5.47
DAC(4) 2.89 2.25 2.13
WWDG 0.89 0.86 0.80

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Table 35. Peripheral current consumption (continued)

IDD( Typ)(1)
Peripheral Unit
Scale 1 Scale 2 Scale 3

SDIO 8.11 8.75 7.83

TIM1 17.11 15.97 14.17
TIM8 17.33 16.11 14.33
TIM9 7.22 6.67 6.00
TIM10 4.56 4.31 3.83
TIM11 4.78 4.44 4.00
ADC1(5) 4.67 4.31 3.83
ADC2(5) 4.78 4.44 4.00
APB2 ADC3(5) 4.56 4.17 3.67
(up to µA/MHz
90 MHz) SPI1 1.44 1.39 1.17
USART1 4.00 3.75 3.33
USART6 4.00 3.75 3.33
SPI4 1.44 1.39 1.17
SPI5 1.44 1.39 1.17
SPI6 1.44 1.39 1.17
SYSCFG 0.78 0.69 0.67
LCD_TFT 39.89 37.22 33.17
SAI1 3.78 3.47 3.17
1. When the I/O compensation cell is ON, IDD typical value increases by 0.22 mA.
2. The BusMatrix is automatically active when at least one master is ON.
3. To enable an I2S peripheral, first set the I2SMOD bit and then the I2SE bit in the SPI_I2SCFGR register.
4. When the DAC is ON and EN1/2 bits are set in the DAC_CR register, add an additional power
consumption of 0.8 mA per DAC channel for the analog part.
5. When the ADC is ON (ADON bit set in the ADC_CR2 register), add an additional power consumption of
1.6 mA per ADC for the analog part.

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6.3.8 Wake-up time from low-power modes

The wake-up times given in Table 36 are measured starting from the wake-up event trigger
up to the first instruction executed by the CPU:
• For Stop or Sleep modes: the wake-up event is WFE.
• WKUP (PA0) pin is used to wake up from Standby, Stop, and Sleep modes.
All timings are derived from tests performed under ambient temperature and VDD=3.3 V.

Table 36. Low-power mode wakeup timings

Symbol Parameter Conditions Typ(1) Max(1) Unit

CPU
tWUSLEEP(2) Wakeup from Sleep - 6 - clock
cycle
Main regulator is ON 13.6 -

Main regulator is ON and Flash

93 111
memory in Deep power down mode
Wakeup from Stop mode
tWUSTOP(2) with MR/LP regulator in
normal mode Low power regulator is ON 22 32

Low power regulator is ON and Flash

103 126
memory in Deep power down mode
µs

Main regulator in under-drive mode

(Flash memory in Deep power-down 105 128
Wakeup from Stop mode mode)
tWUSTOP(2) with MR/LP regulator in Low power regulator in under-drive
Under-drive mode mode
125 155
(Flash memory in Deep power-down
mode )
tWUSTDBY Wakeup from Standby
(2)(3) - 318 412
mode
1. Evaluated by characterization.
2. The wake-up times are measured from the wake-up event to the point in which the application code reads the first
3. tWUSTDBY maximum value is given at –40 °C.

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6.3.9 External clock source characteristics

High-speed external user clock generated from an external source
In bypass mode the HSE oscillator is switched off and the input pin is a standard I/O. The
external clock signal has to respect the Table 57: I/O static characteristics. However, the
recommended clock input waveform is shown in Figure 27.
The characteristics given in Table 37 result from tests performed using a high-speed
external clock source, and under ambient temperature and supply voltage conditions
summarized in Table 17.

Table 37. High-speed external user clock characteristics

Symbol Parameter Conditions Min Typ Max Unit

External user clock source

fHSE_ext 1 - 50 MHz
frequency(1)
VHSEH OSC_IN input pin high level voltage 0.7VDD - VDD
V
VHSEL OSC_IN input pin low level voltage VSS - 0.3VDD
-
tw(HSE)
OSC_IN high or low time(1) 5 - -
tw(HSE)
ns
tr(HSE)
OSC_IN rise or fall time(1) - - 10
tf(HSE)
Cin(HSE) OSC_IN input capacitance(1) - - 5 - pF
DuCy(HSE) Duty cycle - 45 - 55 %
IL OSC_IN Input leakage current VSS ≤ VIN ≤ VDD - - ±1 µA
1. Specified by design.

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Low-speed external user clock generated from an external source

In bypass mode the LSE oscillator is switched off and the input pin is a standard I/O. The
external clock signal has to respect the Table 57: I/O static characteristics. However, the
recommended clock input waveform is shown in Figure 28.
The characteristics given in Table 38 result from tests performed using a low-speed external
clock source, and under ambient temperature and supply voltage conditions summarized in
Table 17.

Table 38. Low-speed external user clock characteristics

Symbol Parameter Conditions Min Typ Max Unit

User External clock source

fLSE_ext - 32.768 1000 kHz
frequency(1)
OSC32_IN input pin high level
VLSEH 0.7VDD - VDD
voltage V
VLSEL OSC32_IN input pin low level voltage - VSS - 0.3VDD
tw(LSE)
OSC32_IN high or low time(1) 450 - -
tf(LSE)
ns
tr(LSE)
OSC32_IN rise or fall time(1) - - 50
tf(LSE)
Cin(LSE) OSC32_IN input capacitance(1) - - 5 - pF
DuCy(LSE) Duty cycle - 30 - 70 %
IL OSC32_IN Input leakage current VSS ≤ VIN ≤ VDD - - ±1 µA
1. Specified by design.

Figure 27. High-speed external clock source AC timing diagram

VHSEH
90 %
10 %
VHSEL
tr(HSE) tf(HSE) tW(HSE) tW(HSE) t

THSE

External fHSE_ext
IL
clock source OSC_IN
STM32F

ai17528

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Figure 28. Low-speed external clock source AC timing diagram

VLSEH
90%
10%
VLSEL
tr(LSE) tf(LSE) tW(LSE) tW(LSE) t

TLSE

External fLSE_ext
OSC32_IN IL
clock source
STM32F

ai17529

High-speed external clock generated from a crystal/ceramic resonator

The high-speed external (HSE) clock can be supplied with a 4 to 26 MHz crystal/ceramic
resonator oscillator. All the information in this paragraph is based on the characterization
results obtained with typical external components specified in Table 39. In the application,
the resonator and the load capacitors have to be placed as close as possible to the
oscillator pins to minimize output distortion and startup stabilization time. Refer to the crystal
resonator manufacturer for more details on the resonator characteristics (frequency,
package, accuracy).

Table 39. HSE 4-26 MHz oscillator characteristics (1)

Symbol Parameter Conditions Min Typ Max Unit

fOSC_IN Oscillator frequency - 4 - 26 MHz

RF Feedback resistor - - 200 - kΩ
VDD=3.3 V,
ESR= 30 Ω, - 450 -
CL=5 pF@25 MHz
IDD HSE current consumption µA
VDD=3.3 V,
ESR= 30 Ω, - 530 -
CL=10 pF@25 MHz
ACCHSE(2) HSE accuracy - − 500 - 500 ppm
Gm_crit_max Maximum critical crystal gm Startup - - 1 mA/V
(3)
tSU(HSE Startup time VDD is stabilized - 2 - ms
1. Specified by design.
2. This parameter depends on the crystal used in the application. The minimum and maximum values must
be respected to comply with USB standard specifications.
3. tSU(HSE) is the startup time measured from the moment that it is enabled (by software) until a stabilized 8
MHz oscillation is reached. This value is based on characterization and not tested in production. It is
measured for a standard crystal resonator and it can vary significantly with the crystal manufacturer.

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For CL1 and CL2, it is recommended to use high-quality external ceramic capacitors in the
5 pF to 25 pF range (typ.), designed for high-frequency applications, and selected to match
the requirements of the crystal or resonator (see Figure 29). CL1 and CL2 are usually the
same size. The crystal manufacturer typically specifies a load capacitance, which is the
series combination of CL1 and CL2. PCB and MCU pin capacitance must be included (10 pF
can be used as a rough estimate of the combined pin and board capacitance) when sizing
CL1 and CL2.
Note: For information on selecting the crystal, refer to the application note AN2867 “Oscillator
design guide for ST microcontrollers” available from the ST website www.st.com.

Figure 29. Typical application with an 8 MHz crystal

Resonator with
integrated capacitors
CL1
OSC_IN fHSE
Bias
8 MHz RF controlled
resonator
gain

REXT(1) OSC_OU T STM32F

CL2
ai17530

1. REXT value depends on the crystal characteristics.

Low-speed external clock generated from a crystal/ceramic resonator

The low-speed external (LSE) clock can be supplied with a 32.768 kHz crystal/ceramic
resonator oscillator. All the information given in this paragraph are based on
characterization results obtained with typical external components specified in Table 40. In
the application, the resonator and the load capacitors have to be placed as close as
possible to the oscillator pins to minimize output distortion and startup stabilization time.
Refer to the crystal resonator manufacturer for more details on the resonator characteristics
(frequency, package, accuracy).

Table 40. LSE oscillator characteristics (fLSE = 32.768 kHz) (1)

Symbol Parameter Conditions Min Typ Max Unit

RF Feedback resistor - - 18.4 - MΩ

IDD LSE current consumption - - - 1 µA
ACCLSE(2) LSE accuracy - − 500 - 500 ppm
Gm_crit_max Maximum critical crystal gm Startup - - 0.56 µA/V
tSU(LSE)(3) startup time VDD is stabilized - 2 - s
1. Specified by design.
2. This parameter depends on the crystal used in the application. Refer to application note AN2867.
3. tSU(LSE) is the startup time measured from the moment that it is enabled (by software) to a stabilized
32.768 kHz oscillation is reached. This value is based on characterization and not tested in production. It is
measured for a standard crystal resonator and it can vary significantly with the crystal manufacturer.

Note: For information on selecting the crystal, refer to the application note AN2867 “Oscillator
design guide for ST microcontrollers” available from the ST website www.st.com.

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Figure 30. Typical application with a 32.768 kHz crystal

Resonator with
integrated capacitors
CL1
OSC32_IN fLSE
Bias
32.768 kH z RF controlled
resonator
gain
OSC32_OU T STM32F
CL2
ai17531

6.3.10 Internal clock source characteristics

The parameters given in Table 41 and Table 42 are derived from tests performed under
ambient temperature and VDD supply voltage conditions summarized in Table 17.

High-speed internal (HSI) RC oscillator

Table 41. HSI oscillator characteristics (1)

Symbol Parameter Conditions Min Typ Max Unit

fHSI Frequency - - 16 - MHz

HSI user-trimming step (2) - - - 1 %
TA = –40 to 105 °C(3) −8 - 4.5 %
ACCHSI
Accuracy of the HSI oscillator TA = –10 to 85 °C(3) −4 - 4 %
TA = 25 °C(4) −1 - 1 %
(2)
tsu(HSI) HSI oscillator startup time - - 2.2 4 µs
HSI oscillator power
IDD(HSI)(2) - - 60 80 µA
consumption
1. VDD = 3.3 V, PLL OFF, TA = –40 to 125 °C unless otherwise specified.
2. Specified by design.
3. Evaluated by characterization results.
4. Factory calibrated, parts not soldered.

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Figure 31. ACCHSI accuracy versus temperature

2
ACCHSI (%)
0
-40 0 25 55 85 105 125 TA (°C)
-2

-4
Min Max Typical
-6

-8

MSv41925V1

1. Evaluated by characterization results.

Low-speed internal (LSI) RC oscillator

Table 42. LSI oscillator characteristics (1)

Symbol Parameter Min Typ Max Unit

fLSI(2) Frequency 17 32 47 kHz

(3)
tsu(LSI) LSI oscillator startup time - 15 40 µs
IDD(LSI) (3) LSI oscillator power consumption - 0.4 0.6 µA
1. VDD = 3 V, TA = –40 to 105 °C unless otherwise specified.
2. Evaluated by characterization results.
3. Specified by design.

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Figure 32. ACCLSI versus temperature

50
max
40 avg
min
30
Normalized deviati on (%)

20

10

-10

-20

-30

-40
-45 -35 -25 -15 -5 5 15 25 35 45 55 65 75 85 95 105
Temperat ure (°C)

MS19013V1

6.3.11 PLL characteristics

The parameters given in Table 43 and Table 44 are derived from tests performed under
temperature and VDD supply voltage conditions summarized in Table 17.

Table 43. Main PLL characteristics

Symbol Parameter Conditions Min Typ Max Unit

fPLL_IN PLL input clock(1) - 0.95(2) 1 2.10 MHz

fPLL_OUT PLL multiplier output clock - 24 - 180 MHz
48 MHz PLL multiplier output
fPLL48_OUT - - 48 75 MHz
clock
fVCO_OUT PLL VCO output - 100 - 432 MHz
VCO freq = 100 MHz 75 - 200
tLOCK PLL lock time µs
VCO freq = 432 MHz 100 - 300

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Table 43. Main PLL characteristics (continued)

Symbol Parameter Conditions Min Typ Max Unit

RMS - 25 -

Cycle-to-cycle jitter peak

to - ±150 -
System clock peak
120 MHz RMS - 15 -

Period Jitter peak

(3) to - ±200 -
Jitter ps
peak
Main clock output (MCO) for Cycle to cycle at 50 MHz
- 32 -
RMII Ethernet on 1000 samples
Main clock output (MCO) for MII Cycle to cycle at 25 MHz
- 40 -
Ethernet on 1000 samples
Cycle to cycle at 1 MHz
Bit Time CAN jitter - 330 -
on 1000 samples
VCO freq = 100 MHz 0.15 0.40
IDD(PLL)(4) PLL power consumption on VDD - mA
VCO freq = 432 MHz 0.45 0.75
PLL power consumption on VCO freq = 100 MHz 0.30 0.40
IDDA(PLL)(4) - mA
VDDA VCO freq = 432 MHz 0.55 0.85
1. Use the appropriate division factor M to obtain the specified PLL input clock values. The M factor is shared between PLL
and PLLI2S.
2. Specified by design.
3. The use of 2 PLLs in parallel could degrade the Jitter up to +30%.
4. Evaluated by characterization.

Table 44. PLLI2S (audio PLL) characteristics

Symbol Parameter Conditions Min Typ Max Unit

fPLLI2S_IN PLLI2S input clock(1) - 0.95(2) 1 2.10 MHz

fPLLI2S_OUT PLLI2S multiplier output clock - - - 216 MHz
fVCO_OUT PLLI2S VCO output - 100 - 432 MHz
VCO freq = 100 MHz 75 - 200
tLOCK PLLI2S lock time µs
VCO freq = 432 MHz 100 - 300

Cycle to cycle at RMS - 90 - -

12.288 MHz on peak
48KHz period, to - ±280 - ps
N=432, R=5 peak
Master I2S clock jitter
(3) Average frequency of
Jitter
12.288 MHz
- 90 - ps
N = 432, R = 5
on 1000 samples
Cycle to cycle at 48 KHz
WS I2S clock jitter - 400 - ps
on 1000 samples

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Table 44. PLLI2S (audio PLL) characteristics (continued)

Symbol Parameter Conditions Min Typ Max Unit

PLLI2S power consumption on VCO freq = 100 MHz 0.15 0.40

IDD(PLLI2S)(4) - mA
VDD VCO freq = 432 MHz 0.45 0.75
PLLI2S power consumption on VCO freq = 100 MHz 0.30 0.40
IDDA(PLLI2S)(4) - mA
VDDA VCO freq = 432 MHz 0.55 0.85
1. Use the appropriate division factor M to have the specified PLL input clock values.
2. Specified by design.
3. Value given with the main PLL running.
4. Evaluated by characterization.

Table 45. PLLISAI (audio and LCD-TFT PLL) characteristics

Symbol Parameter Conditions Min Typ Max Unit

fPLLSAI_IN PLLSAI input clock(1) - 0.95(2) 1 2.10 MHz

fPLLSAI_OUT PLLSAI multiplier output clock - - - 216 MHz
fVCO_OUT PLLSAI VCO output - 100 - 432 MHz
VCO freq = 100 MHz 75 - 200
tLOCK PLLSAI lock time µs
VCO freq = 432 MHz 100 - 300

Cycle to cycle at RMS - 90 - -

12.288 MHz on peak
48KHz period, to - ±280 - ps
N=432, R=5 peak
Main SAI clock jitter
(3) Average frequency of
Jitter
12.288 MHz
- 90 - ps
N = 432, R = 5
on 1000 samples
Cycle to cycle at 48 KHz
FS clock jitter - 400 - ps
on 1000 samples
PLLSAI power consumption on VCO freq = 100 MHz 0.15 0.40
IDD(PLLSAI)(4) - mA
VDD VCO freq = 432 MHz 0.45 0.75
PLLSAI power consumption on VCO freq = 100 MHz 0.30 0.40
IDDA(PLLSAI)(4) - mA
VDDA VCO freq = 432 MHz 0.55 0.85
1. Use the appropriate division factor M to have the specified PLL input clock values.
2. Specified by design.
3. Value given with the main PLL running.
4. Evaluated by characterization.

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6.3.12 PLL spread spectrum clock generation (SSCG) characteristics

The spread spectrum clock generation (SSCG) feature allows the decrease of
electromagnetic interferences (see Table 52: EMI characteristics for fHSE= 25 MHz and
fCPU= 168 MHz). It is available only on the main PLL.

Table 46. SSCG parameters constraint

Symbol Parameter Min Typ Max(1) Unit

fMod Modulation frequency - - 10 KHz

md Peak modulation depth 0.25 - 2 %
MODEPER * INCSTEP - - - 215 −1 -
1. Specified by design.

Equation 1
The frequency modulation period (MODEPER) is given by the equation below:
MODEPER = round [ f PLL_IN ⁄ ( 4 × f Mod ) ]

fPLL_IN and fMod must be expressed in Hz.

As an example:
If fPLL_IN = 1 MHz, and fMOD = 1 kHz, the modulation depth (MODEPER) is given by
equation 1:
6 3
MODEPER = round [ 10 ⁄ ( 4 × 10 ) ] = 250

Equation 2
Equation 2 allows to calculate the increment step (INCSTEP):
15
INCSTEP = round [ ( ( 2 – 1 ) × md × PLLN ) ⁄ ( 100 × 5 × MODEPER ) ]

fVCO_OUT must be expressed in MHz.

With a modulation depth (md) = ±2 % (4 % peak to peak), and PLLN = 240 (in MHz):
15
INCSTEP = round [ ( ( 2 – 1 ) × 2 × 240 ) ⁄ ( 100 × 5 × 250 ) ] = 126md(quantitazed)%

An amplitude quantization error may be generated because the linear modulation profile is
obtained by taking the quantized values (rounded to the nearest integer) of MODPER and
INCSTEP. As a result, the achieved modulation depth is quantized. The percentage
quantized modulation depth is given by the following formula:
15
md quantized % = ( MODEPER × INCSTEP × 100 × 5 ) ⁄ ( ( 2 – 1 ) × PLLN )

As a result:
15
md quantized % = ( 250 × 126 × 100 × 5 ) ⁄ ( ( 2 – 1 ) × 240 ) = 2.002%(peak)

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Figure 33 and Figure 34 show the main PLL output clock waveforms in center spread and
down spread modes, where:
F0 is fPLL_OUT nominal.
Tmode is the modulation period.
md is the modulation depth.

Figure 33. PLL output clock waveforms in center spread mode

Frequency (PLL_OUT)

md
F0
md

Time
tmode 2xtmode
ai17291

Figure 34. PLL output clock waveforms in down spread mode

Frequency (PLL_OUT)

F0
2xmd

Time
tmode 2xtmode
ai17292b

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6.3.13 Memory characteristics

Flash memory
The characteristics are given at TA = –40 to 105 °C unless otherwise specified.
The devices are shipped to customers with the flash memory erased.

Table 47. Flash memory characteristics

Symbol Parameter Conditions Min Typ Max Unit

Write / Erase 8-bit mode, VDD = 1.7 V - 5 -

IDD Supply current Write / Erase 16-bit mode, VDD = 2.1 V - 8 - mA
Write / Erase 32-bit mode, VDD = 3.3 V - 12 -

Table 48. Flash memory programming

Symbol Parameter Conditions Min(1) Typ Max(1) Unit

Program/erase parallelism
tprog Word programming time - 16 100(2) µs
(PSIZE) = x 8/16/32
Program/erase parallelism
- 400 800
(PSIZE) = x 8
Program/erase parallelism
tERASE16KB Sector (16 KB) erase time - 300 600 ms
(PSIZE) = x 16
Program/erase parallelism
- 250 500
(PSIZE) = x 32
Program/erase parallelism
- 1200 2400
(PSIZE) = x 8
Program/erase parallelism
tERASE64KB Sector (64 KB) erase time - 700 1400 ms
(PSIZE) = x 16
Program/erase parallelism
- 550 1100
(PSIZE) = x 32
Program/erase parallelism
- 2 4
(PSIZE) = x 8
Program/erase parallelism
tERASE128KB Sector (128 KB) erase time - 1.3 2.6 s
(PSIZE) = x 16
Program/erase parallelism
- 1 2
(PSIZE) = x 32
Program/erase parallelism
- 16 32
(PSIZE) = x 8
Program/erase parallelism
tME Mass erase time - 11 22 s
(PSIZE) = x 16
Program/erase parallelism
- 8 16
(PSIZE) = x 32

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Table 48. Flash memory programming (continued)

Symbol Parameter Conditions Min(1) Typ Max(1) Unit

Program/erase parallelism
- 16 32
(PSIZE) = x 8
Program/erase parallelism
tBE Bank erase time - 11 22 s
(PSIZE) = x 16
Program/erase parallelism
- 8 16
(PSIZE) = x 32
32-bit program operation 2.7 - 3.6 V
Vprog Programming voltage 16-bit program operation 2.1 - 3.6 V
8-bit program operation 1.7 - 3.6 V
1. Evaluated by characterization.
2. The maximum programming time is measured after 100 K erase operations.

Table 49. Flash memory programming with VPP

Symbol Parameter Conditions Min(1) Typ Max(1) Unit

tprog Double word programming - 16 100(2) µs

tERASE16KB Sector (16 KB) erase time TA = 0 to +40 °C - 230 -
tERASE64KB Sector (64 KB) erase time VDD = 3.3 V - 490 - ms
tERASE128KB Sector (128 KB) erase time VPP = 8.5 V - 875 -
tME Mass erase time - 6.9 - s
tBE Bank erase time - - 6.9 - s
Vprog Programming voltage - 2.7 - 3.6 V
VPP VPP voltage range - 7 - 9 V
Minimum current sunk on
IPP - 10 - - mA
the VPP pin
Cumulative time during
tVPP(3) - - - 1 hour
which VPP is applied
1. Specified by design.
2. The maximum programming time is measured after 100 K erase operations.
3. VPP should only be connected during programming/erasing.

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Table 50. Flash memory endurance and data retention

Value
Symbol Parameter Conditions Unit
Min(1)

TA = –40 to +85 °C (6 suffix versions)

NEND Endurance 10 kcycles
TA = –40 to +105 °C (7 suffix versions)
1 kcycle(2) at TA = 85 °C 30
tRET (2)
Data retention 1 kcycle at TA = 105 °C 10 Years
(2)
10 kcycles at TA = 55 °C 20
1. Evaluated by characterization results.
2. Cycling performed over the whole temperature range.

6.3.14 EMC characteristics

Susceptibility tests are performed on a sample basis during device characterization.

Functional EMS (electromagnetic susceptibility)

While a simple application is executed on the device (toggling 2 LEDs through I/O ports).
Two electromagnetic events stress the device until a failure occurs. The LEDs indicate the
failure:
• Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
• FTB: A burst of fast transient voltage (positive and negative) is applied to VDD and VSS
through a 100 pF capacitor, until a functional disturbance occurs. This test is compliant
with the IEC 61000-4-4 standard.
A device reset allows normal operations to be resumed.
The test results are given in Table 51. They are based on the EMS levels and classes
defined in application note AN1709.

Table 51. EMS characteristics

Level/
Symbol Parameter Conditions
Class

VDD = 3.3 V, LQFP176, TA =

Voltage limits to be applied on any I/O pin to
VFESD +25 °C, fHCLK = 168 MHz, conforms 2B
induce a functional disturbance
to IEC 61000-4-2
Fast transient voltage burst limits to be VDD = 3.3 V, LQFP176, TA =+25 °C,
VEFTB applied through 100 pF on VDD and VSS fHCLK = 168 MHz, conforms to 4A
pins to induce a functional disturbance IEC 61000-4-2

When the application is exposed to a noisy environment, it is recommended to avoid pin

exposition to disturbances. The pins showing a middle range robustness are: PA0, PA1,
PA2, PH2, PH3, PH4, PH5, PA3, PA4, PA5, PA6, PA7, PC4, and PC5.
As a consequence, it is recommended to add a serial resistor (1 kΏ) located as close as
possible to the MCU to the pins exposed to noise (connected to tracks longer than 50 mm
on PCB).

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Designing hardened software to avoid noise problems

EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore, it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
Software recommendations
The software flowchart must include the management of runaway conditions such as:
• Corrupted program counter
• Unexpected reset
• Critical data corruption (control registers...)
Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the NRST pin or the oscillator pins for 1
second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015).

Electromagnetic Interference (EMI)

The electromagnetic field emitted by the device is monitored while a simple application,
executing EEMBC? code, is running. This emission test is compliant with SAE IEC61967-2
standard, which specifies the test board and the pin loading.

Table 52. EMI characteristics for fHSE= 25 MHz and fCPU= 168 MHz
Max vs.
Monitored [fHSE/fCPU]
Symbol Parameter Conditions Unit
frequency band
25/168 MHz

0.1 to 30 MHz 16
VDD = 3.3 V, TA = 25 °C, LQFP176
package, conforming to SAE J1752/3 30 to 130 MHz 23 dBµV
Peak(1)
EEMBC, ART ON, all peripheral 130 MHz to
clocks enabled, clock dithering 25
1GHz
disabled.
0.1 MHz to
Level(2) 1GHz
4 -
SEMI
0.1 to 30 MHz 17
VDD = 3.3 V, TA = 25 °C, LQFP176
package, conforming to SAE J1752/3 30 to 130 MHz 8 dBµV
Peak(1)
EEMBC, ART ON, all peripheral 130 MHz to
clocks enabled, clock dithering 11
1GHz
enabled
0.1 MHz to
Level(2) 1GHz
3.5 -

1. Refer to chapter “EMI radiated test” in AN1709.

2. Refer to chapter “EMI level classification” in AN1709.

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Table 53. EMI characteristics for HSE= 25 MHz and fCPU= 180 MHz

Max vs.
Monitored [fHSE/fCPU]
Symbol Parameter Conditions Unit
frequency band
25/180 MHz

0.1 to 30 MHz 19
VDD = 3.3 V, TA = 25 °C, LQFP176
package, conforming to SAE J1752/3 30 to 130 MHz 23 dBµV
Peak(1)
EEMBC, ART ON, all peripheral 130 MHz to
clocks enabled, clock dithering 22
1GHz
disabled.
0.1 MHz to
Level(2) 1GHz
4 -
SEMI
0.1 to 30 MHz 16
VDD = 3.3 V, TA = 25 °C, LQFP176
package, conforming to SAE J1752/3 30 to 130 MHz 10 dBµV
Peak(1)
EEMBC, ART ON, all peripheral 130 MHz to
clocks enabled, clock dithering 16
1GHz
enabled
0.1 MHz to
Level(2) 1GHz
3.5 -

1. Refer to chapter “EMI radiated test” in AN1709.

2. Refer to chapter “EMI level classification” in AN1709.

6.3.15 Absolute maximum ratings (electrical sensitivity)

Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed to determine its performance in terms of electrical sensitivity.

Electrostatic discharge (ESD)

Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the ANSI/ESDA/JEDEC JS-001 and ANSI/ESD S5.3.1 standards.

Table 54. ESD absolute maximum ratings

Maximum
Symbol Ratings Conditions Class Unit
value(1)

Electrostatic discharge
TA = +25 °C conforming to
VESD(HBM) voltage (human body 2 2000
ANSI/ESDA/JEDEC JS-001
model)
TA = +25 °C conforming to ANSI/ESD S5.3.1,
V
Electrostatic discharge LQFP100/144/176, UFBGA169/176, C3 250
VESD(CDM) voltage (charge device TFBGA176 and WLCSP143 packages
model) TA = +25 °C conforming to ANSI/ESD S5.3.1,
C3 250
LQFP208 package
1. Evaluated by characterization.

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Static latchup
Two complementary static tests are required on six parts to assess the latchup
performance:
• A supply overvoltage is applied to each power supply pin
• A current injection is applied to each input, output, and configurable I/O pin
These tests are compliant with the EIA/JESD 78A IC latchup standard.

Table 55. Electrical sensitivities

Symbol Parameter Conditions Class

LU Static latch-up class TA = +105 °C conforming to JESD78A II level A

6.3.16 I/O current injection characteristics

As a general rule, current injection to the I/O pins, due to external voltage below VSS or
above VDD (for standard, 3 V-capable I/O pins) should be avoided during normal product
operation. However, to give an indication of the robustness of the microcontroller in cases
when abnormal injection accidentally happens, susceptibility tests are performed on a
sample basis during device characterization.

Functional susceptibility to I/O current injection

While a simple application is executed on the device, the device is stressed by injecting
current into the I/O pins programmed in floating input mode. While current is injected into
the I/O pin, one at a time, the device is checked for functional failures.
An out of range parameter indicates the failure: ADC error above a certain limit (>5 LSB
TUE), out of conventional limits of induced leakage current on adjacent pins (out of –
5 µA/+0 µA range), or other functional failure (for example reset, oscillator frequency
deviation).
Negative induced leakage current is caused by negative injection and positive induced
leakage current by positive injection.
The test results are given in Table 56.

Table 56. I/O current injection susceptibility(1)

Functional susceptibility
Symbol Description Unit
Negative Positive
injection injection

Injected current on BOOT0 pin −0 NA

Injected current on NRST pin −0 NA
Injected current on PA0, PA1, PA2, PA3, PA6, PA7, PB0,
IINJ −0 NA mA
PC0, PC1, PC2, PC3, PC4, PC5, PH1, PH2, PH3, PH4, PH5
Injected current on TTa pins: PA4 and PA5 −0 +5
Injected current on any other FT pin −5 NA
1. NA = not applicable.

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Note: It is recommended to add a Schottky diode (pin to ground) to analog pins, which may
potentially inject negative currents.

6.3.17 I/O port characteristics

General input/output characteristics
Unless otherwise specified, the parameters given in Table 57: I/O static characteristics are
derived from tests performed under the conditions summarized in Table 17. All I/Os are
CMOS and TTL compliant.
Note: For information on GPIO configuration, refer to the application note AN4899 “STM32 GPIO
configuration for hardware settings and low-power consumption” available from
www.st.com.

Table 57. I/O static characteristics

Symbol Parameter Conditions Min Typ Max Unit

0.35VDD−0.04
FT, TTa and NRST I/O input (1)
1.7 V£ VDD£ 3.6 V - -
low level voltage
0.3VDD(2)
VIL 1.75 V£ DD £ 3.6 V, – V
- -
BOOT0 I/O input low level 40 °C£ TA £ 105 °C
0.1VDD+0.1(1)
voltage 1.7 V£ VDD £ 3.6 V,
- -
0 °C£ TA £ 105 °C

FT, TTa and NRST I/O input 0.45VDD+0.3(1)

1.7 V£ VDD£ 3.6 V - -
high level voltage(5) 0.7VDD(2)

VIH 1.75 V£ VDD £ 3.6 V, V

BOOT0 I/O input high level –40 °C£ TA £ 105 °C
0.17VDD+0.7(1) - -
voltage 1.7 V£ VDD £ 3.6 V,
0 °C£ TA £ 105 °C
FT, TTa and NRST I/O input
1.7 V£ VDD£ 3.6 V 10%VDD(3) - -
hysteresis
1.75 V£ VDD £ 3.6 V,
VHYS V
–40 °C£ TA £ 105 °C
BOOT0 I/O input hysteresis 0.1 - -
1.7 V£ VDD £ 3.6 V,
0 °C£ TA £ 105 °C
I/O input leakage current (4) VSS £ VIN £ VDD - - ±1
Ilkg µA
(5)
I/O FT input leakage current VIN = 5 V - - 3

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Table 57. I/O static characteristics (continued)

Symbol Parameter Conditions Min Typ Max Unit

All pins
except for
PA10/PB12 30 40 50
Weak pull-up (OTG_FS_ID,
RPU equivalent OTG_HS_ID) VIN = VSS
resistor(6)
PA10/PB12
(OTG_FS_ID, 7 10 14
OTG_HS_ID)
kΩ
All pins
except for
Weak pull- PA10/PB12 30 40 50
down (OTG_FS_ID,
RPD OTG_HS_ID) VIN = VDD
equivalent
resistor(7) PA10/PB12
(OTG_FS_ID, 7 10 14
OTG_HS_ID)
CIO(8) I/O pin capacitance - - 5 - pF
1. Specified by design.
2. Tested in production.
3. With a minimum of 200 mV.
4. Leakage could be higher than the maximum value, if negative current is injected on adjacent pins, refer to Table 56: I/O
current injection susceptibility
5. To sustain a voltage higher than VDD +0.3 V, the internal pull-up/pull-down resistors must be disabled. Leakage could be
higher than the maximum value, if a negative current is injected on adjacent pins. Refer to Table 56: I/O current injection
susceptibility
6. Pull-up resistors are designed with a true resistance in series with a switchable PMOS. This PMOS contribution to the
series resistance is minimum (~10% order).
7. Pull-down resistors are designed with a true resistance in series with a switchable NMOS. This NMOS contribution to the
series resistance is minimum (~10% order).
8. Hysteresis voltage between Schmitt trigger switching levels. Evaluated by characterization.

All I/Os are CMOS and TTL compliant (no software configuration required). Their
characteristics cover more than the strict CMOS-technology or TTL parameters. The
coverage of these requirements for FT I/Os is shown in Figure 35.

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Figure 35. FT I/O input characteristics

VIL/VIH (V)

2.52 DD
7V
0.
=
in
m
VIH
nt e
m
u ire TTL requirement
eq r VIHmin = 2V
2.0 OS .3
1.92 C M +0
- DD
n 5 V
tio 0.4
1.7 uc in=
od IHm
pr , V
in ns
ed tio
st ula
Te s i m
ign
es
1.22
o nD Area not
1.19 d 0.04
a se determined DD-
B 0 . 35V
1.065 ax=
ILm
ns, V
im u latio
s
0.8 sign
n De
ed o TTL requirement VILmax
Bas
0.55 = 0.8V
0.51
Tested in production - CMOS requirement VILmax = 0.3VDD

VDD (V)
1.7 2.0 2.4 2.7 3.3 3.6
MS33746V1

Output driving current

The GPIOs (general-purpose input/outputs) can sink or source up to ±8 mA, and sink or
source up to ±20 mA (with a relaxed VOL/VOH) except PC13, PC14, PC15, and PI8, which
can sink or source up to ±3mA. When using the PC13 to PC15 and PI8 GPIOs in output
mode, the speed should not exceed 2 MHz with a maximum load of 30 pF.
In the user application, the number of I/O pins, which can drive current must be limited to
respect the absolute maximum rating specified in Section 6.2. In particular:
• The sum of the currents sourced by all the I/Os on VDD, plus the maximum Run
consumption of the MCU sourced on VDD, cannot exceed the absolute maximum rating
∑IVDD (see Table 15).
• The sum of the currents sunk by all the I/Os on VSS plus the maximum Run
consumption of the MCU sunk on VSS cannot exceed the absolute maximum rating
∑IVSS (see Table 15).

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Output voltage levels

Unless otherwise specified, the parameters given in Table 58 are derived from tests
performed under ambient temperature and VDD supply voltage conditions summarized in
Table 17. All I/Os are CMOS and TTL compliant.

Table 58. Output voltage characteristics

Symbol Parameter Conditions Min Max Unit

VOL(1) Output low level voltage for an I/O pin CMOS port (2)
- 0.4
IIO = +8 mA V
VOH(3) Output high level voltage for an I/O pin
2.7 V ≤VDD ≤ 3.6 V
VDD − 0.4 -

VOL (1) Output low level voltage for an I/O pin TTL port(2) - 0.4
IIO =+ 8mA V
VOH (3) Output high level voltage for an I/O pin
2.7 V ≤VDD ≤ 3.6 V
2.4 -

VOL(1) Output low level voltage for an I/O pin IIO = +20 mA - 1.3(4)
V
VOH(3) Output high level voltage for an I/O pin 2.7 V ≤ VDD ≤ 3.6 V VDD −1.3(4) -
VOL(1) Output low level voltage for an I/O pin IIO = +6 mA - 0.4(4)
V
VOH(3) Output high level voltage for an I/O pin 1.8 V ≤ VDD ≤ 3.6 V VDD −0.4(4) -
VOL(1) Output low level voltage for an I/O pin IIO = +4 mA - 0.4(5)
V
VOH(3) Output high level voltage for an I/O pin 1.7 V ≤ VDD ≤ 3.6V VDD −0.4(5) -
1. The IIO current sunk by the device must always respect the absolute maximum rating specified in Table 15.
and the sum of IIO (I/O ports and control pins) must not exceed IVSS.
2. TTL and CMOS outputs are compatible with JEDEC standards JESD36 and JESD52.
3. The IIO current sourced by the device must always respect the absolute maximum rating specified in
Table 15 and the sum of IIO (I/O ports and control pins) must not exceed IVDD.
4. Based on characterization data.
5. Specified by design.

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Input/output AC characteristics
The definition and values of input/output AC characteristics are given in Figure 36 and
Table 59, respectively.
Unless otherwise specified, the parameters given in Table 59 are derived from tests
performed under the ambient temperature and VDD supply voltage conditions summarized
in Table 17.

Table 59. I/O AC characteristics(1)(2)

OSPEEDRy
[1:0] bit Symbol Parameter Conditions Min Typ Max Unit
value(1)

CL = 50 pF, VDD ≥ 2.7 V - - 4

CL = 50 pF, VDD ≥ 1.7 V - - 2
fmax(IO)out Maximum frequency(3) CL = 10 pF, VDD ≥ 2.7 V - - 8 MHz

00 CL = 10 pF, VDD ≥ 1.8 V - - 4

CL = 10 pF, VDD ≥ 1.7 V - - 3
Output high to low level fall
tf(IO)out/ CL = 50 pF, VDD = 1.7 V to
time and output low to high - - 100 ns
tr(IO)out 3.6 V
level rise time
CL = 50 pF, VDD≥ 2.7 V - - 25
CL = 50 pF, VDD≥ 1.8 V - - 12.5
CL = 50 pF, VDD≥ 1.7 V - - 10
fmax(IO)out Maximum frequency(3) MHz
CL = 10 pF, VDD ≥ 2.7 V - - 50
CL = 10 pF, VDD≥ 1.8 V - - 20
01
CL = 10 pF, VDD≥ 1.7 V - - 12.5
CL = 50 pF, VDD ≥ 2.7 V - - 10
Output high to low level fall CL = 10 pF, VDD ≥ 2.7 V - - 6
tf(IO)out/
time and output low to high ns
tr(IO)out CL = 50 pF, VDD ≥ 1.7 V - - 20
level rise time
CL = 10 pF, VDD ≥ 1.7 V - - 10
CL = 40 pF, VDD ≥ 2.7 V - - 50(4)
CL = 10 pF, VDD ≥ 2.7 V - - 100(4)
fmax(IO)out Maximum frequency(3) CL = 40 pF, VDD ≥ 1.7 V - - 25 MHz
CL = 10 pF, VDD ≥ 1.8 V - - 50
10 CL = 10 pF, VDD ≥ 1.7 V - - 42.5
CL = 40 pF, VDD ≥2.7 V - - 6
Output high to low level fall CL = 10 pF, VDD ≥ 2.7 V - - 4
tf(IO)out/
time and output low to high ns
tr(IO)out CL = 40 pF, VDD ≥ 1.7 V - - 10
level rise time
CL = 10 pF, VDD ≥ 1.7 V - - 6

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Table 59. I/O AC characteristics(1)(2) (continued)

OSPEEDRy
[1:0] bit Symbol Parameter Conditions Min Typ Max Unit
value(1)

CL = 30 pF, VDD ≥ 2.7 V - - 100(4)

CL = 30 pF, VDD ≥ 1.8 V - - 50
CL = 30 pF, VDD ≥ 1.7 V - - 42.5
fmax(IO)out Maximum frequency(3) MHz
CL = 10 pF, VDD≥ 2.7 V - - 180(4)
CL = 10 pF, VDD ≥ 1.8 V - - 100
CL = 10 pF, VDD ≥ 1.7 V - - 72.5
11
CL = 30 pF, VDD ≥ 2.7 V - - 4
CL = 30 pF, VDD ≥1.8 V - - 6
Output high to low level fall CL = 30 pF, VDD ≥1.7 V - - 7
tf(IO)out/
time and output low to high ns
tr(IO)out CL = 10 pF, VDD ≥ 2.7 V - - 2.5
level rise time
CL = 10 pF, VDD ≥1.8 V - - 3.5
CL = 10 pF, VDD ≥1.7 V - - 4
Pulse width of external signals
- tEXTIpw detected by the EXTI - 10 - - ns
controller
1. Specified by design.
2. The I/O speed is configured using the OSPEEDRy[1:0] bits. Refer to the STM32F4xx reference manual for a description of
the GPIOx_SPEEDR GPIO port output speed register.
3. The maximum frequency is defined in Figure 36.
4. For maximum frequencies above 50 MHz and VDD > 2.4 V, the compensation cell should be used.

Figure 36. I/O AC characteristics definition

90% 10%

50% 50%

10% 90%

t r(IO)out t f(IO)out

Maximum frequency is achieved with a duty cycle at (45 - 55%) when loaded by the
specified capacitance.

MS32132V4

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6.3.18 NRST pin characteristics

The NRST pin input driver uses CMOS technology. It is connected to a permanent pull-up
resistor, RPU (see Table 57: I/O static characteristics).
Unless otherwise specified, the parameters given in Table 60 are derived from tests
performed under the ambient temperature and VDD supply voltage conditions summarized
in Table 17.

Table 60. NRST pin characteristics

Symbol Parameter Conditions Min Typ Max Unit

RPU Weak pull-up equivalent resistor(1) VIN = VSS 30 40 50 kΩ

VF(NRST) (2) NRST Input filtered pulse - - - 100 ns
VNF(NRST)(2) NRST Input not filtered pulse VDD > 2.7 V 300 - - ns
TNRST_OUT Generated reset pulse duration Internal Reset source 20 - - µs
1. The pull-up is designed with a true resistance in series with a switchable PMOS. This PMOS contribution to the series
resistance must be minimum (~10% order).
2. Specified by design.

Figure 37. Recommended NRST pin protection

VDD
External
reset circuit (1)
RPU
NRST (2) Internal Reset
Filter

0.1 μF

STM32F

ai14132c

1. The reset network protects the device against parasitic resets.

2. The external capacitor must be placed as close as possible to the device.
3. The user must ensure that the level on the NRST pin can go below the VIL(NRST) max level specified in
Table 60. Otherwise, the reset is not considered by the device.

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6.3.19 TIM timer characteristics

The parameters given in Table 61 are specified by design.
Refer to Section 6.3.17: I/O port characteristics for details on the input/output alternate
function characteristics (output compare, input capture, external clock, PWM output).

Table 61. TIMx characteristics(1)(2)

Symbol Parameter Conditions(3) Min Max Unit

AHB/APBx prescaler=1
or 2 or 4, fTIMxCLK = 1 - tTIMxCLK
tres(TIM) Timer resolution time 180 MHz
AHB/APBx prescaler>4,
1 - tTIMxCLK
fTIMxCLK = 90 MHz

Timer external clock

fEXT 0 fTIMxCLK/2 MHz
frequency on CH1 to CH4 f
TIMxCLK = 180 MHz
ResTIM Timer resolution - 16/32 bit
Maximum possible count 65536 ×
tMAX_COUNT - - tTIMxCLK
with 32-bit counter 65536
1. TIMx is used as a general term to refer to the TIM1 to TIM12 timers.
2. Specified by design.
3. The maximum timer frequency on APB1 or APB2 is up to 180 MHz, by setting the TIMPRE bit in the
RCC_DCKCFGR register, if APBx prescaler is 1 or 2 or 4, then TIMxCLK = HCKL, otherwise TIMxCLK =
4x PCLKx.

6.3.20 Communications interfaces

I2C interface characteristics
The I2C interface meets the timing requirements of the I2C-bus specification and user
manual rev. 03 for:
• Standard mode (Sm): with a bit rate up to 100 kbit/s
• Fast mode (Fm): with a bit rate up to 400 kbit/s.
The I2C timings requirements are specified by design when the I2C peripheral is properly
configured (refer to RM0090 reference manual).
The SDA and SCL I/O requirements are met with the following restrictions: the SDA and
SCL I/O pins are not “true” open-drain. When configured as open-drain, the PMOS
connected between the I/O pin and VDD is disabled, but is still present. Refer to
Section 6.3.17: I/O port characteristics for more details on the I2C I/O characteristics.
All I2C SDA and SCL I/Os embed an analog filter. Refer to the table below for the analog
filter characteristics:

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Table 62. I2C analog filter characteristics(1)

Symbol Parameter Min Max Unit

Maximum pulse width of spikes that

tAF 50(2) 260(3) ns
are suppressed by the analog filter
1. Specified by design.
2. Spikes with widths below tAF(min) are filtered.
3. Spikes with widths above tAF(max) are not filtered

SPI interface characteristics

Unless otherwise specified, the parameters given in Table 63 for the SPI interface are
derived from tests performed under the ambient temperature, fPCLKx frequency, and VDD
supply voltage conditions summarized in Table 17, with the following configuration:
• Output speed is set to OSPEEDRy[1:0] = 10
• Capacitive load C = 30 pF
• Measurement points are done at CMOS levels: 0.5VDD
Refer to Section 6.3.17: I/O port characteristics for more details on the input/output alternate
function characteristics (NSS, SCK, MOSI, MISO for SPI).

Table 63. SPI dynamic characteristics(1)

Symbol Parameter Conditions Min Typ Max Unit

Master mode, SPI1/4/5/6,

45
2.7 V≤VDD≤3.6 V

Slave mode, Receiver - - 45

SPI1/4/5/6, Transmitter/
fSCK 2.7 V≤VDD≤3.6 V 38(2)
SPI clock frequency full-duplex MHz
1/tc(SCK)
Master mode, SPI1/2/3/4/5/6,
22.5
1.7 V≤VDD≤3.6 V
- -
Slave mode, SPI1/2/3/4/5/6,
22.5
1.7 V≤VDD≤3.6 V
Duty cycle of SPI clock
Duty(SCK) Slave mode 30 50 70 %
frequency

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Table 63. SPI dynamic characteristics(1) (continued)

Symbol Parameter Conditions Min Typ Max Unit

Master mode, SPI presc = 2,

tw(SCKH) TPCLK − 0.5 TPCLK TPCLK+0.5
2.7 V≤VDD≤3.6 V
SCK high and low time
Master mode, SPI presc = 2,
tw(SCKL) TPCLK − 2 TPCLK TPCLK+2
1.7 V≤VDD≤3.6 V
tsu(NSS) NSS setup time Slave mode, SPI presc = 2 4TPCLK
- -
th(NSS) NSS hold time Slave mode, SPI presc = 2 2TPCLK
tsu(MI) Master mode 3 - -
Data input setup time
tsu(SI) Slave mode 0 - - ns
th(MI) Master mode 0.5 - -
Data input hold time
th(SI) Slave mode 2 - -
ta(SO) Data output access time Slave mode, SPI presc = 2 0 - 4TPCLK
Slave mode, SPI1/4/5/6,
0 - 8.5
2.7 V≤VDD≤3.6 V
tdis(SO) Data output disable time
Slave mode, SPI1/2/3/4/5/6 and
0 - 16.5
1.7 V≤VDD≤3.6 V
Slave mode (after enable edge),
- 11 13
SPI1/4/5/6 and 2.7V ≤ VDD ≤ 3.6V
Slave mode (after enable edge),
- 14 15
tv(SO) Data output valid/hold SPI2/3, 2.7 V≤VDD≤3.6 V
th(SO) time Slave mode (after enable edge),
- 15.5 19
SPI1/4/5/6, 1.7 V≤VDD≤3.6 V
Slave mode (after enable edge), ns
- 15.5 17.5
SPI2/3, 1.7 V≤VDD≤3.6 V
Master mode (after enable edge),
- - 2.5
SPI1/4/5/6, 2.7 V≤VDD≤3.6 V
tv(MO) Data output valid time
Master mode (after enable edge),
- - 4.5
SPI1/2/3/4/5/6, 1.7 V≤VDD≤3.6 V
th(MO) Data output hold time Master mode (after enable edge) 0 - -
1. Evaluated by characterization.
2. The maximum frequency in Slave transmitter mode is determined by the sum of tv(SO) and tsu(MI), which has to fit into SCK
low or high phase preceding the SCK sampling edge. This value can be achieved when the SPI communicates with a
master having tsu(MI) = 0 while Duty(SCK) = 50%.

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Figure 38. SPI timing diagram - slave mode and CPHA = 0

NSS input

tc(SCK) th(NSS)

tsu(NSS) tw(SCKH)
CPHA=0
SCK input

CPOL=0

CPHA=0
CPOL=1
ta(SO) tw(SCKL) tv(SO) th(SO) tdis(SO)

MISO output First bit OUT Next bits OUT Last bit OUT

tsu(SI) th(SI)

MOSI input First bit IN Next bits IN Last bit IN

MSv41658V2

Figure 39. SPI timing diagram - slave mode and CPHA = 1

NSS input

tc(SCK) th(NSS)
tsu(NSS) tw(SCKH)
CPHA=1
SCK input

CPOL=0

CPHA=1
CPOL=1
ta(SO) tw(SCKL) tv(SO) th(SO) tdis(SO)

MISO output First bit OUT Next bits OUT Last bit OUT

tsu(SI) th(SI)

MOSI input First bit IN Next bits IN Last bit IN

MSv41659V2

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Figure 40. SPI timing diagram - master mode

High

NSS input
tc(SCK)
tw(SCKH)
CPHA=0
SCK output

CPOL=0

CPHA=0
CPOL=1
tw(SCKL)
CPHA=1
SCK output

CPOL=0

CPHA=1
CPOL=1
tsu(MI) th(MI)

MISO input First bit IN Next bits IN Last bit IN

MOSI output First bit OUT Next bits OUT Last bit OUT

tv(MO) th(MO)
MSv72626V1

I2S interface characteristics

Unless otherwise specified, the parameters given in Table 64 for the I2S interface are
derived from tests performed under the ambient temperature, fPCLKx frequency, and VDD
supply voltage conditions summarized in Table 17, with the following configuration:
• Output speed is set to OSPEEDRy[1:0] = 10
• Capacitive load C = 30 pF
• Measurement points are done at CMOS levels: 0.5VDD
Refer to Section 6.3.17: I/O port characteristics for more details on the input/output alternate
function characteristics (CK, SD, WS).

Table 64. I2S dynamic characteristics(1)

Symbol Parameter Conditions Min Max Unit

fMCK I2S Main clock output - 256x8K 256xFs(2) MHz

Master data: 32 bits - 64xFs
fCK I2S clock frequency MHz
Slave data: 32 bits - 64xFs
DCK I2S clock frequency duty cycle Slave receiver 30 70 %

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Table 64. I2S dynamic characteristics(1) (continued)

Symbol Parameter Conditions Min Max Unit

tv(WS) WS valid time Master mode 0 6

th(WS) WS hold time Master mode 0 -
tsu(WS) WS setup time Slave mode 1 -
th(WS) WS hold time Slave mode 0 -
tsu(SD_MR) Master receiver 7.5 -
Data input setup time
tsu(SD_SR) Slave receiver 2 -
th(SD_MR) Master receiver 0 - ns
Data input hold time
th(SD_SR) Slave receiver 0 -
tv(SD_ST)
Slave transmitter (after enable edge) - 27
th(SD_ST) Data output valid time
tv(SD_MT) Master transmitter (after enable edge) - 20

-
th(SD_MT) Data output hold time Master transmitter (after enable edge) 2.5

1. Evaluated by characterization.
2. The maximum value of 256xFs is 45 MHz (APB1 maximum frequency).

Note: Refer to the I2S section of the RM0090 reference manual for more details on the sampling
frequency (FS).
fMCK, fCK, and DCK values reflect only the digital peripheral behavior. The values of these
parameters might be slightly impacted by the source clock precision. DCK depends mainly
on the value of ODD bit. The digital contribution leads to a minimum value of
(I2SDIV/(2*I2SDIV+ODD) and a maximum value of (I2SDIV+ODD)/(2*I2SDIV+ODD). FS
maximum value is supported for each mode/condition.

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Figure 41. I2S slave timing diagram (Philips protocol)(1)

1. .LSB transmit/receive of the previously transmitted byte. No LSB transmit/receive is sent before the first
byte.

Figure 42. I2S master timing diagram (Philips protocol)(1)

1. LSB transmit/receive of the previously transmitted byte. No LSB transmit/receive is sent before the first
byte.

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SAI characteristics
Unless otherwise specified, the parameters given in Table 65 for SAI are derived from tests
performed under the ambient temperature, fPCLKx frequency, and VDD supply voltage
conditions summarized in Table 17, with the following configuration:
• Output speed is set to OSPEEDRy[1:0] = 10
• Capacitive load C=30 pF
• Measurement points are performed at CMOS levels: 0.5VDD
Refer to Section 6.3.17: I/O port characteristics for more details on the input/output alternate
function characteristics (SCK,SD,WS).

Table 65. SAI characteristics(1)

Symbol Parameter Conditions Min Max Unit

fMCKL SAI Main clock output - 256 x 8K 256xFs(2) MHz

Master data: 32 bits - 64xFs
FSCK SAI clock frequency MHz
Slave data: 32 bits - 64xFs
SAI clock frequency duty
DSCK Slave receiver 30 70 %
cycle
tv(FS) FS valid time Master mode 8 22
tsu(FS) FS setup time Slave mode 2 -
Master mode 8 -
th(FS) FS hold time
Slave mode 0 -
tsu(SD_MR) Master receiver 5 -
Data input setup time
tsu(SD_SR) Slave receiver 3 -
th(SD_MR) Master receiver 0 - ns
Data input hold time
th(SD_SR) Slave receiver 0 -
tv(SD_ST) Slave transmitter (after enable
- 22
th(SD_ST) edge)
Data output valid time
Master transmitter (after enable
tv(SD_MT) - 20
edge)
Master transmitter (after enable
th(SD_MT) Data output hold time 8 -
edge)
1. Evaluated by characterization.
2. 256xFs maximum corresponds to 45 MHz (APB2 maximum frequency)

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Figure 43. SAI master timing waveforms

1/fSCK

SAI_SCK_X
th(FS)

SAI_FS_X
(output) tv(FS) tv(SD_MT) th(SD_MT)

SAI_SD_X
Slot n Slot n+2
(transmit)
tsu(SD_MR) th(SD_MR)

SAI_SD_X Slot n
(receive)
MS32771V1

Figure 44. SAI slave timing waveforms

1/fSCK

SAI_SCK_X
tw(CKH_X) tw(CKL_X) th(FS)

SAI_FS_X
(input) tsu(FS) tv(SD_ST) th(SD_ST)

SAI_SD_X
Slot n Slot n+2
(transmit)
tsu(SD_SR) th(SD_SR)

SAI_SD_X Slot n
(receive)
MS32772V1

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USB OTG full speed (FS) characteristics

This interface is present in both the USB OTG HS and USB OTG FS controllers.

Table 66. USB OTG full speed startup time

Symbol Parameter Max Unit

tSTARTUP(1) USB OTG full speed transceiver startup time 1 µs

1. Specified by design.

Table 67. USB OTG full speed DC electrical characteristics

Symbol Parameter Conditions Min.(1) Typ. Max.(1) Unit

USB OTG full speed

VDD transceiver operating 3.0(2) - 3.6 V
voltage
I(USB_FS_DP/DM,
Input VDI(3) Differential input sensitivity 0.2 - -
USB_HS_DP/DM)
levels
Differential common mode
VCM(3) Includes VDI range 0.8 - 2.5 V
range
Single ended receiver
VSE(3) 1.3 - 2.0
threshold

Output VOL Static output level low RL of 1.5 kΩ to 3.6 V(4) - - 0.3
V
levels VOH Static output level high RL of 15 kΩ to VSS(4) 2.8 - 3.6
PA11, PA12, PB14, PB15
(USB_FS_DP/DM, 17 21 24
USB_HS_DP/DM)
RPD VIN = VDD
PA9, PB13
(OTG_FS_VBUS, 0.65 1.1 2.0
OTG_HS_VBUS) kΩ
PA12, PB15 (USB_FS_DP,
VIN = VSS 1.5 1.8 2.1
USB_HS_DP)
RPU PA9, PB13
(OTG_FS_VBUS, VIN = VSS 0.25 0.37 0.55
OTG_HS_VBUS)
1. All the voltages are measured from the local ground potential.
2. The USB OTG full speed transceiver functionality is ensured down to 2.7 V but not the full USB full speed
electrical characteristics, which are degraded in the 2.7-to-3.0 V VDD voltage range.
3. Specified by design.
4. RL is the load connected on the USB OTG full speed drivers.

Note: When the VBUS sensing feature is enabled, PA9 and PB13 should be left at their default
state (floating input), not as alternate function. A typical 200 µA current consumption of the
sensing block (current-to-voltage conversion to determine the different sessions) can be
observed on PA9 and PB13 when the feature is enabled.

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Figure 45. USB OTG full speed timings: definition of data signal rise and fall time

Cross over
points
Differential
data lines

VCRS

VSS

tf tr
ai14137b

Table 68. USB OTG full speed electrical characteristics(1)

Driver characteristics

Symbol Parameter Conditions Min Max Unit

tr Rise time(2) CL = 50 pF 4 20 ns
tf Fall time(2) CL = 50 pF 4 20 ns
trfm Rise/ fall time matching tr/tf 90 110 %
VCRS Output signal crossover voltage - 1.3 2.0 V
Driving high or
ZDRV Output driver impedance(3) 28 44 Ω
low
1. Specified by design.
2. Measured from 10% to 90% of the data signal. For more detailed information, refer to USB Specification -
Chapter 7 (version 2.0).
3. No external termination series resistors are required on DP (D+) and DM (D-) pins since the matching
impedance is included in the embedded driver.

USB high speed (HS) characteristics

Unless otherwise specified, the parameters given in Table 71 for ULPI are derived from
tests performed under the ambient temperature, fHCLK frequency summarized in Table 70
and VDD supply voltage conditions summarized in Table 69, with the following configuration:
• Output speed is set to OSPEEDRy[1:0] = 10, unless otherwise specified
• Capacitive load C = 30 pF, unless otherwise specified
• Measurement points are done at CMOS levels: 0.5VDD.
Refer to Section 6.3.17: I/O port characteristics for more details on the input/output
characteristics.

Table 69. USB HS DC electrical characteristics

Symbol Parameter Min.(1) Max.(1) Unit

Input level VDD USB OTG HS operating voltage 1.7 3.6 V

1. All the voltages are measured from the local ground potential.

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Table 70. USB HS clock timing parameters(1)

Symbol Parameter Min Typ Max Unit

fHCLK value to guarantee proper operation of

30 - - MHz
USB HS interface
FSTART_8BIT Frequency (first transition) 8-bit ±10% 54 60 66 MHz
FSTEADY Frequency (steady state) ±500 ppm 59.97 60 60.03 MHz
DSTART_8BIT Duty cycle (first transition) 8-bit ±10% 40 50 60 %
DSTEADY Duty cycle (steady state) ±500 ppm 49.975 50 50.025 %
Time to reach the steady state frequency and
tSTEADY - - 1.4 ms
duty cycle after the first transition
tSTART_DEV Clock startup time after the Peripheral - - 5.6
ms
tSTART_HOST de-assertion of SuspendM Host - - -
PHY preparation time after the first transition
tPREP - - - µs
of the input clock
1. Specified by design.

Figure 46. ULPI timing diagram

Clock

tSC tHC
Control In
(ULPI_DIR,
ULPI_NXT) tSD tHD
data In
(8-bit)

tDC tDC
Control out
(ULPI_STP)
tDD
data out
(8-bit)
ai17361c

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Table 71. Dynamic characteristics: USB ULPI(1)

Symbol Parameter Conditions Min. Typ. Max. Unit

tSC Control in (ULPI_DIR, ULPI_NXT) setup time - 2 - -

tHC Control in (ULPI_DIR, ULPI_NXT) hold time - 0.5 - -
tSD Data in setup time - 1.5 - -
tHD Data in hold time - 2 - -
2.7 V < VDD < 3.6 V,
CL = 15 pF and - 9 9.5
OSPEEDRy[1:0] = 11 ns

2.7 V < VDD < 3.6 V,

tDC/tDD Data/control output delay CL = 20 pF and -
OSPEEDRy[1:0] = 10
12 15
1.7 V < VDD < 3.6 V,
CL = 15 pF and -
OSPEEDRy[1:0] = 11
1. Specified by characterization.

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Ethernet characteristics
Unless otherwise specified, the parameters given in Table 72, Table 73 and Table 74 for
SMI, RMII and MII are derived from tests performed under the ambient temperature, fHCLK
frequency summarized in Table 17 with the following configuration:
• Output speed is set to OSPEEDRy[1:0] = 10
• Capacitive load C = 30 pF for 2.7 V < VDD < 3.6 V
• Capacitive load C = 20 pF for 1.71 V < VDD < 3.6 V
• Measurement points are done at CMOS levels: 0.5VDD.
Refer to Section 6.3.17: I/O port characteristics for more details on the input/output
characteristics.
Table 72 gives the list of Ethernet MAC signals for the SMI (station management interface)
and Figure 47 shows the corresponding timing diagram.

Figure 47. Ethernet SMI timing diagram

tMDC

ETH_MDC

td(MDIO)

ETH_MDIO(O)

tsu(MDIO) th(MDIO)

ETH_MDIO(I)

MS31384V1

Table 72. Dynamics characteristics: Ethernet MAC signals for SMI(1)

Symbol Parameter Min Typ Max Unit

tMDC MDC cycle time(2.38 MHz) 411 420 425

Td(MDIO) Write data valid time 6 10 13
ns
tsu(MDIO) Read data setup time 12 - -
th(MDIO) Read data hold time 0 - -
1. Evaluated by characterization.

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Table 73 gives the list of Ethernet MAC signals for the RMII and Figure 48 shows the
corresponding timing diagram.

Figure 48. Ethernet RMII timing diagram

RMII_REF_CLK

td(TXEN)
td(TXD)

RMII_TX_EN
RMII_TXD[1:0]

tsu(RXD) tih(RXD)
tsu(CRS) tih(CRS)

RMII_RXD[1:0]
RMII_CRS_DV

ai15667b

Table 73. Dynamics characteristics: Ethernet MAC signals for RMII(1)

Symbol Parameter Condition Min Typ Max Unit

tsu(RXD) Receive data setup time 1.5 - -

tih(RXD) Receive data hold time 0 - -
1.71 V < VDD < 3.6 V
tsu(CRS) Carrier sense setup time 1 - -
tih(CRS) Carrier sense hold time 1 - -
ns
Transmit enable valid delay 2.7 V < VDD < 3.6 V 8 10.5 12
td(TXEN)
time 1.71 V < VDD < 3.6 V 8 10.5 14
2.7 V < VDD < 3.6 V 8 11 12.5
td(TXD) Transmit data valid delay time
1.71 V < VDD < 3.6 V 8 11 14.5
1. Evaluated by characterization results.

Table 74 gives the list of Ethernet MAC signals for MII and Figure 48 shows the
corresponding timing diagram.

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Figure 49. Ethernet MII timing diagram

MII_RX_CLK

tsu(RXD) tih(RXD)
tsu(ER) tih(ER)
tsu(DV) tih(DV)

MII_RXD[3:0]
MII_RX_DV
MII_RX_ER

MII_TX_CLK

td(TXEN)
td(TXD)

MII_TX_EN
MII_TXD[3:0]

ai15668b

Table 74. Dynamics characteristics: Ethernet MAC signals for MII(1)

Symbol Parameter Condition Min Typ Max Unit

tsu(RXD) Receive data setup time 9 - -

tih(RXD) Receive data hold time 10 - -
tsu(DV) Data valid setup time 9 - -
1.71 V < VDD < 3.6 V
tih(DV) Data valid hold time 8 - -
tsu(ER) Error setup time 6 - -
ns
tih(ER) Error hold time 8 - -
2.7 V < VDD < 3.6 V 8 10 14
td(TXEN) Transmit enable valid delay time
1.71 V < VDD < 3.6 V 8 10 16
2.7 V < VDD < 3.6 V 7.5 10 15
td(TXD) Transmit data valid delay time
1.71 V < VDD < 3.6 V 7.5 10 17
1. Evaluated by characterization.

CAN (controller area network) interface

Refer to Section 6.3.17: I/O port characteristics for more details on the input/output alternate
function characteristics (CANx_TX and CANx_RX).

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6.3.21 12-bit ADC characteristics

Unless otherwise specified, the parameters given in Table 75 are derived from tests
performed under the ambient temperature, fPCLK2 frequency and VDDA supply voltage
conditions summarized in Table 17.

Table 75. ADC characteristics

Symbol Parameter Conditions Min Typ Max Unit

VDDA (1)
Power supply 1.7 - 3.6
VDDA − VREF+ < 1.2 V
VREF+ Positive reference voltage 1.7(1) - VDDA V
VREF- Negative reference voltage - - 0 -
(1)
VDDA = 1.7 to 2.4 V 0.6 15 18 MHz
fADC ADC clock frequency
VDDA = 2.4 to 3.6 V 0.6 30 36 MHz
fADC = 30 MHz,
- - 1764 kHz
fTRIG(2) External trigger frequency 12-bit resolution
- - - 17 1/fADC
0
VAIN Conversion voltage range(3) - (VSSA or VREF- - VREF+ V
tied to ground)
See Equation 1 for
RAIN(2) External input impedance - - 50 kΩ
details
RADC(2)(4) Sampling switch resistance - 1.5 - 6 kΩ
Internal sample and hold
CADC(2) - - 4 7 pF
capacitor

Injection trigger conversion fADC = 30 MHz - - 0.100 µs

tlat(2)
latency - - - 3(5) 1/fADC

Regular trigger conversion fADC = 30 MHz - - 0.067 µs

tlatr(2)
latency - - - 2(5) 1/fADC
fADC = 30 MHz 0.100 - 16 µs
tS(2) Sampling time
- 3 - 480 1/fADC
tSTAB(2) Power-up time - - 2 3 µs
fADC = 30 MHz
0.50 - 16.40 µs
12-bit resolution
fADC = 30 MHz
0.43 - 16.34 µs
10-bit resolution
Total conversion time (including fADC = 30 MHz
tCONV(2) 0.37 - 16.27 µs
sampling time) 8-bit resolution
fADC = 30 MHz
0.30 - 16.20 µs
6-bit resolution
9 to 492 (tS for sampling +n-bit resolution for successive
1/fADC
approximation)

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Table 75. ADC characteristics (continued)

Symbol Parameter Conditions Min Typ Max Unit

12-bit resolution
- - 2 Msps
Single ADC

Sampling rate 12-bit resolution

Interleave Dual ADC - - 3.75 Msps
fS(2) (fADC = 30 MHz, and
mode
tS = 3 ADC cycles)
12-bit resolution
Interleave Triple ADC - - 6 Msps
mode
ADC VREF DC current
IVREF+(2) consumption in conversion - - 300 500 µA
mode
ADC VDDA DC current
IVDDA(2) consumption in conversion - - 1.6 1.8 mA
mode
1. VDDA minimum value of 1.7 V is obtained with the use of an external power supply supervisor (refer to Section 3.17.2:
Internal reset OFF).
2. Evaluated by characterization results.
3. VREF+ is internally connected to VDDA and VREF- is internally connected to VSSA.
4. RADC maximum value is given for VDD=1.7 V, and a minimum value for VDD=3.3 V.
5. For external triggers, a delay of 1/fPCLK2 must be added to the latency specified in Table 75.

Equation 1: RAIN max formula

R AIN
( k – 0.5 )
= ---------------------------------------------------------------
- – R ADC
N+2
f ADC × C ADC × ln ( 2 )

The formula above (Equation 1) is used to determine the maximum external impedance
allowed for an error below 1/4 of LSB. N = 12 (from 12-bit resolution) and k is the number of
sampling periods defined in the ADC_SMPR1 register.

Table 76. ADC static accuracy at fADC = 18 MHz

Symbol Parameter Test conditions Typ Max(1) Unit

ET Total unadjusted error ±3 ±4

fADC =18 MHz
EO Offset error ±2 ±3
VDDA = 1.7 to 3.6 V
LSB
EG Gain error VREF = 1.7 to 3.6 V ±1 ±3
ED Differential linearity error VDDA − VREF < 1.2 V ±1 ±2
EL Integral linearity error ±2 ±3
1. Evaluated by characterization - not tested in production results.

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Table 77. ADC static accuracy at fADC = 30 MHz

Symbol Parameter Test conditions Typ Max(1) Unit

ET Total unadjusted error ±2 ±5

fADC = 30 MHz,
EO Offset error ±1.5 ±2.5
RAIN < 10 kΩ
EG Gain error VDDA = 2.4 to 3.6 V, ±1.5 ±3 LSB
VREF = 1.7 to 3.6 V,
ED Differential linearity error ±1 ±2
VDDA − VREF < 1.2 V
EL Integral linearity error ±1.5 ±3
1. Evaluated by characterization.

Table 78. ADC static accuracy at fADC = 36 MHz

Symbol Parameter Test conditions Typ Max(1) Unit

ET Total unadjusted error ±4 ±7

EO Offset error fADC =36 MHz, ±2 ±3

VDDA = 2.4 to 3.6 V,
EG Gain error ±3 ±6 LSB
VREF = 1.7 to 3.6 V
ED Differential linearity error VDDA − VREF < 1.2 V ±2 ±3
EL Integral linearity error ±3 ±6
1. Evaluated by characterization.

Table 79. ADC dynamic accuracy at fADC = 18 MHz - limited test conditions(1)
Symbol Parameter Test conditions Min Typ Max Unit

ENOB Effective number of bits 10.3 10.4 - bits

fADC =18 MHz
SINAD Signal-to-noise and distortion ratio VDDA = VREF+= 1.7 V 64 64.2 -
SNR Signal-to-noise ratio Input Frequency = 20 KHz 64 65 - dB
Temperature = 25 °C
THD Total harmonic distortion − 67 − 72 -
1. Evaluated by characterization.

Table 80. ADC dynamic accuracy at fADC = 36 MHz - limited test conditions(1)
Symbol Parameter Test conditions Min Typ Max Unit

ENOB Effective number of bits 10.6 10.8 - bits

fADC =36 MHz
SINAD Signal-to noise and distortion ratio VDDA = VREF+ = 3.3 V 66 67 -
SNR Signal-to noise ratio Input Frequency = 20 KHz 64 68 - dB
Temperature = 25 °C
THD Total harmonic distortion − 70 − 72 -
1. Evaluated by characterization.

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Note: ADC accuracy vs. negative injection current: injecting a negative current on any analog
input pins should be avoided as this significantly reduces the accuracy of the conversion
being performed on another analog input. It is recommended to add a Schottky diode (pin to
ground) to analog pins, which may potentially inject negative currents.
Any positive injection current within the limits specified for IINJ(PIN) and ∑IINJ(PIN) in
Section 6.3.17 does not affect the ADC accuracy.

Figure 50. ADC accuracy characteristics

V REF+ V DDA
[1LSB IDEAL = (or depending on package)]
4096 4096
EG
4095
4094
4093

(2)
ET
7 (3)
(1)
6
5
EO EL
4
3
ED
2
1L SBIDEAL
1

0
1 2 3 456 7 4093 4094 4095 4096
V SSA VDDA
ai14395c

1. See also Table 77.

2. Example of an actual transfer curve.
3. Ideal transfer curve.
4. End-point correlation line.
5. ET = Total Unadjusted Error: maximum deviation between the actual and the ideal transfer curves.
EO = Offset Error: deviation between the first actual transition and the first ideal one.
EG = Gain Error: deviation between the last ideal transition and the last actual one.
ED = Differential Linearity Error: maximum deviation between actual steps and the ideal one.
EL = Integral Linearity Error: maximum deviation between any actual transition and the end-point
correlation line.

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Figure 51. Typical connection diagram when using the ADC with FT/TT pins featuring
the analog switch function

VDDA(4) VREF+(4)

I/O Sample-and-hold ADC converter

analog
RAIN(1) switch RADC
Converter
(2)
Cparasitic Ilkg(3) CADC
VAIN Sampling
switch with
multiplexing

VSS VSS VSSA

MSv67871V3

1. Refer to Table 75: ADC characteristics for the values of RAIN, RADC, and CADC.
2. Cparasitic represents the capacitance of the PCB (dependent on soldering and PCB layout quality) plus the
pad capacitance (refer to Table 57: I/O static characteristics). A high Cparasitic value downgrades
conversion accuracy. To remedy this, fADC should be reduced.
3. Refer to Table 57: I/O static characteristics for the value of IIkg.
4. Refer to Figure 22: Power supply scheme.

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General PCB design guidelines

Power supply decoupling should be performed as shown in Figure 52 or Figure 53,
depending on whether VREF+ is connected to VDDA or not. The 10 nF capacitors should be
ceramic (good quality). They should be placed them as close as possible to the chip.

Figure 52. Power supply and reference decoupling (VREF+ not connected to VDDA)

STM32F

VREF+ (1)

1 μF // 10 nF
VDDA

1 μF // 10 nF

(1)
VSSA/VREF-

ai17535b

1. VREF+ and VREF– inputs are both available on UFBGA176. VREF+ is also available on LQFP100, LQFP144,
and LQFP176. When VREF+ and VREF– are not available, they are internally connected to VDDA and VSSA.

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Figure 53. Power supply and reference decoupling (VREF+ connected to VDDA)

STM32F

VREF+/VDDA (1)

1 μF // 10 nF

(1)
VREF-/VSSA

ai17536c

1. VREF+ and VREF– inputs are both available on UFBGA176. VREF+ is also available on LQFP100, LQFP144,
and LQFP176. When VREF+ and VREF– are not available, they are internally connected to VDDA and VSSA.

6.3.22 Temperature sensor characteristics

Table 81. Temperature sensor characteristics

Symbol Parameter Min Typ Max Unit

TL(1) VSENSE linearity with temperature - ±1 ±2 °C

Avg_Slope(1) Average slope - 2.5 - mV/°C
V25(1) Voltage at 25 °C - 0.76 - V
tSTART(2) Startup time - 6 10 µs
TS_temp(2) ADC sampling time when reading the temperature (1 °C accuracy) 10 - - µs
1. Evaluated by characterization.
2. Specified by design.

Table 82. Temperature sensor calibration values

Symbol Parameter Memory address

TS_CAL1 TS ADC raw data acquired at temperature of 30 °C, VDDA= 3.3 V 0x1FFF 7A2C - 0x1FFF 7A2D
TS_CAL2 TS ADC raw data acquired at temperature of 110 °C, VDDA= 3.3 V 0x1FFF 7A2E - 0x1FFF 7A2F

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6.3.23 VBAT monitoring characteristics

Table 83. VBAT monitoring characteristics

Symbol Parameter Min Typ Max Unit

R Resistor bridge for VBAT - 50 - KΩ

Q Ratio on VBAT measurement - 4 - -
(1)
Er Error on Q –1 - +1 %
ADC sampling time when reading the VBAT
TS_vbat(2)(2) 5 - - µs
1 mV accuracy
1. Specified by design.
2. The shortest sampling time can be determined in the application by multiple iterations.

6.3.24 Reference voltage

The parameters given in Table 84 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 17.

Table 84. internal reference voltage

Symbol Parameter Conditions Min Typ Max Unit

VREFINT Internal reference voltage –40 °C < TA < +105 °C 1.18 1.21 1.24 V
ADC sampling time when reading the
TS_vrefint(1) - 10 - - µs
internal reference voltage
Internal reference voltage spread over the
VRERINT_s(2) VDD = 3V ± 10mV - 3 5 mV
temperature range
TCoeff(2) Temperature coefficient - - 30 50 ppm/°C
tSTART(2) Startup time - - 6 10 µs
1. The shortest sampling time can be determined in the application by multiple iterations.
2. Specified by design, not tested in production

Table 85. Internal reference voltage calibration values

Symbol Parameter Memory address

VREFIN_CAL Raw data acquired at temperature of 30 °C VDDA = 3.3 V 0x1FFF 7A2A - 0x1FFF 7A2B

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6.3.25 DAC electrical characteristics

Table 86. DAC characteristics

Symbol Parameter Conditions Min Typ Max Unit Comments

VDDA Analog supply voltage - 1.7(1) - 3.6 V -

Reference supply
VREF+ - 1.7(1) - 3.6 V VREF+ ≤ VDDA
voltage
VSSA Ground - 0 - 0 V -
RLOAD
connected 5 - - -
DAC output to VSSA
RLOAD(2) Resistive load kΩ
buffer ON R
LOAD
connected 25 -
to VDDA
When the buffer is OFF, the
Minimum resistive load
Impedance output with
RO(2) - - - 15 kΩ between DAC_OUT and VSS
buffer OFF
to have a 1% accuracy is
1.5 MΩ
Maximum capacitive load at
CLOAD(2) Capacitive load - - - 50 pF DAC_OUT pin (when the
buffer is ON).

DAC_O It gives the maximum output

Lower DAC_OUT
UT - 0.2 - - V excursion of the DAC.
(2) voltage with buffer ON
min It corresponds to 12-bit input
DAC_O code (0x0E0) to (0xF1C) at
Higher DAC_OUT VDDA VREF+ = 3.6 V and (0x1C7) to
UT - - - V
(2) voltage with buffer ON − 0.2 (0xE38) at VREF+ = 1.7 V
max
DAC_O Lower DAC_OUT
UT voltage with buffer - - 0.5 - mV
min(2) OFF It gives the maximum output
DAC_O Higher DAC_OUT VREF+ excursion of the DAC.
UT voltage with buffer - - - − V
max(2) OFF 1LSB
With no load, worst code
(0x800) at VREF+ = 3.6 V in
- - 170 240
DAC DC VREF current terms of DC consumption on
consumption in the inputs
IVREF+(4) µA
quiescent mode With no load, worst code
(Standby mode) (0xF1C) at VREF+ = 3.6 V in
- - 50 75
terms of DC consumption on
the inputs

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Table 86. DAC characteristics (continued)

Symbol Parameter Conditions Min Typ Max Unit Comments

With no load, middle code

- - 280 380 µA
(0x800) on the inputs
DAC DC VDDA
IDDA(4) current consumption in With no load, worst code
quiescent mode(3) (0xF1C) at VREF+ = 3.6 V in
- - 475 625 µA
terms of DC consumption on
the inputs

Differential non Given for the DAC in 10-bit

linearity Difference - - - ±0.5 LSB
configuration.
DNL(4) between two
consecutive code- Given for the DAC in 12-bit
1LSB) - - - ±2 LSB
configuration.
Integral non linearity Given for the DAC in 10-bit
- - - ±1 LSB
(difference between configuration.
measured value at
INL(4) Code i and the value
at Code i on a line Given for the DAC in 12-bit
- - - ±4 LSB
drawn between Code configuration.
0 and last Code 1023)
Given for the DAC in 12-bit
- - - ±10 mV
Offset error configuration
(difference between Given for the DAC in 10-bit at
Offset(4) measured value at - - - ±3 LSB
VREF+ = 3.6 V
Code (0x800) and the
ideal value = VREF+/2) Given for the DAC in 12-bit at
- - - ±12 LSB
VREF+ = 3.6 V
Gain Given for the DAC in 12-bit
Gain error - - - ±0.5 %
error(4) configuration
Settling time (full
scale: for a 10-bit input
code transition
tSETTLIN between the lowest CLOAD ≤ 50 pF,
(4) - - 3 6 µs
G and the highest input RLOAD ≥ 5 kΩ
codes when
DAC_OUT reaches
final value ±4LSB
Total Harmonic
CLOAD ≤ 50 pF,
THD(4) Distortion - - - - dB
RLOAD ≥ 5 kΩ
Buffer ON
Max frequency for a
correct DAC_OUT
Update change when small MS/ CLOAD ≤ 50 pF,
- - - 1
rate(2) variation in the input s RLOAD ≥ 5 kΩ
code (from code i to
i+1LSB)

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Table 86. DAC characteristics (continued)

Symbol Parameter Conditions Min Typ Max Unit Comments

Wakeup time from off

CLOAD ≤ 50 pF, RLOAD ≥ 5 kΩ
tWAKEUP( state (Setting the ENx
4) - - 6.5 10 µs input code between lowest and
bit in the DAC Control
highest possible ones.
register)
Power supply rejection
PSRR+
(2) ratio (to VDDA) (static - - –67 –40 dB No RLOAD, CLOAD = 50 pF
DC measurement)
1. VDDA minimum value of 1.7 V is obtained with the use of an external power supply supervisor (refer to Section 3.17.2:
Internal reset OFF).
2. Specified by design.
3. The quiescent mode corresponds to a state where the DAC maintains a stable output level to ensure that no dynamic
consumption occurs.
4. Evaluated by characterization - not tested in production.

Figure 54. 12-bit buffered /non-buffered DAC

Buffered/non-buffered DAC

(1)
Buffer

RLOAD
12-bit
DACx_OUT
digital to
analog
converter
CLOAD

ai17157a

1. The DAC integrates an output buffer that can be used to reduce the output impedance and to drive external loads directly
without the use of an external operational amplifier. The buffer can be bypassed by configuring the BOFFx bit in the
DAC_CR register.

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6.3.26 FMC characteristics

Unless otherwise specified, the parameters given in Table 87 to Table 102 for the FMC
interface are derived from tests performed under the ambient temperature, fHCLK frequency,
and VDD supply voltage conditions summarized in Table 17, with the following configuration:
• Output speed is set to OSPEEDRy[1:0] = 10 except at VDD range 1.7 to 2.1 V where
OSPEEDRy[1:0] = 11
• Measurement points are done at CMOS levels: 0.5VDD

Refer to Section 6.3.17: I/O port characteristics for more details on the input/output
characteristics.

Asynchronous waveforms and timings

Figure 55 through Figure 58 represent asynchronous waveforms and Table 87 through
Table 94 provide the corresponding timings. The results shown in these tables are obtained
with the following FMC configuration:
• AddressSetupTime = 0x1
• AddressHoldTime = 0x1
• DataSetupTime = 0x1 (except for asynchronous NWAIT mode, DataSetupTime = 0x5)
• BusTurnAroundDuration = 0x0
• For SDRAM memories, VDD ranges from 2.7 to 3.6 V and maximum frequency
FMC_SDCLK = 90 MHz
• For Mobile LPSDR SDRAM memories, VDD ranges from 1.7 to 1.95 V and maximum
frequency FMC_SDCLK = 84 MHz

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Figure 55. Asynchronous non-multiplexed SRAM/PSRAM/NOR read waveforms

tw(NE)

FMC_NE

tv(NOE_NE) t w(NOE) t h(NE_NOE)

FMC_NOE

FMC_NWE

tv(A_NE) t h(A_NOE)

FMC_A[25:0] Address
tv(BL_NE) t h(BL_NOE)

FMC_NBL[1:0]

t h(Data_NE)

t su(Data_NOE) th(Data_NOE)

t su(Data_NE)

FMC_D[15:0] Data

t v(NADV_NE)

tw(NADV)

FMC_NADV (1)

FMC_NWAIT
th(NE_NWAIT)

tsu(NWAIT_NE)

MS32753V1

1. Mode 2/B, C, and D only. In Mode 1, FMC_NADV is not used.

Table 87. Asynchronous non-multiplexed SRAM/PSRAM/NOR -

read timings(1)(2)
Symbol Parameter Min Max Unit

tw(NE) FMC_NE low time 2THCLK − 0.5 2 THCLK+0.5 ns

tv(NOE_NE) FMC_NEx low to FMC_NOE low 0 1 ns
tw(NOE) FMC_NOE low time 2THCLK 2THCLK+ 0.5 ns
th(NE_NOE) FMC_NOE high to FMC_NE high hold time 0 - ns
tv(A_NE) FMC_NEx low to FMC_A valid - 2 ns
th(A_NOE) Address hold time after FMC_NOE high 0 - ns
tv(BL_NE) FMC_NEx low to FMC_BL valid - 2 ns
th(BL_NOE) FMC_BL hold time after FMC_NOE high 0 - ns
tsu(Data_NE) Data to FMC_NEx high setup time THCLK + 2.5 - ns
tsu(Data_NOE) Data to FMC_NOEx high setup time THCLK +2 - ns

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Table 87. Asynchronous non-multiplexed SRAM/PSRAM/NOR -

read timings(1)(2) (continued)
Symbol Parameter Min Max Unit

th(Data_NOE) Data hold time after FMC_NOE high 0 - ns

th(Data_NE) Data hold time after FMC_NEx high 0 - ns
tv(NADV_NE) FMC_NEx low to FMC_NADV low - 0 ns
tw(NADV) FMC_NADV low time - THCLK +1 ns
1. CL = 30 pF.
2. Evaluated by characterization.

Table 88. Asynchronous non-multiplexed SRAM/PSRAM/NOR read -

NWAIT timings(1)(2)
Symbol Parameter Min Max Unit

tw(NE) FMC_NE low time 7THCLK+0.5 7THCLK+1

tw(NOE) FMC_NWE low time 5THCLK − 1.5 5THCLK +2 ns

tsu(NWAIT_NE) FMC_NWAIT valid before FMC_NEx high 5THCLK+1.5 -
FMC_NEx hold time after FMC_NWAIT
th(NE_NWAIT) 4THCLK+1 -
invalid
1. CL = 30 pF.
2. Evaluated by characterization.

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Figure 56. Asynchronous non-multiplexed SRAM/PSRAM/NOR write waveforms

tw(NE)

FMC_NEx

FMC_NOE
tv(NWE_NE) tw(NWE) t h(NE_NWE)

FMC_NWE

tv(A_NE) th(A_NWE)

FMC_A[25:0] Address
tv(BL_NE) th(BL_NWE)

FMC_NBL[1:0] NBL
tv(Data_NE) th(Data_NWE)

FMC_D[15:0] Data
t v(NADV_NE)

tw(NADV)
FMC_NADV (1)

FMC_NWAIT
th(NE_NWAIT)

tsu(NWAIT_NE)
MS32754V1

1. Mode 2/B, C, and D only. In Mode 1, FMC_NADV is not used.

Table 89. Asynchronous non-multiplexed SRAM/PSRAM/NOR write timings(1)(2)

Symbol Parameter Min Max Unit
tw(NE) FMC_NE low time 3THCLK 3THCLK+1 ns
tv(NWE_NE) FMC_NEx low to FMC_NWE low THCLK − 0.5 THCLK+ 0.5 ns
tw(NWE) FMC_NWE low time THCLK THCLK+ 0.5 ns
th(NE_NWE) FMC_NWE high to FMC_NE high hold time THCLK +1.5 - ns
tv(A_NE) FMC_NEx low to FMC_A valid - 0 ns
th(A_NWE) Address hold time after FMC_NWE high THCLK+0.5 - ns
tv(BL_NE) FMC_NEx low to FMC_BL valid - 1.5 ns
th(BL_NWE) FMC_BL hold time after FMC_NWE high THCLK+0.5 - ns
tv(Data_NE) Data to FMC_NEx low to Data valid - THCLK+ 2 ns
th(Data_NWE) Data hold time after FMC_NWE high THCLK+0.5 - ns
tv(NADV_NE) FMC_NEx low to FMC_NADV low - 0.5 ns
tw(NADV) FMC_NADV low time - THCLK+ 0.5 ns
1. CL = 30 pF.
2. Evaluated by characterization.

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Table 90. Asynchronous non-multiplexed SRAM/PSRAM/NOR write -

NWAIT timings(1)(2)
Symbol Parameter Min Max Unit

tw(NE) FMC_NE low time 8THCLK+1 8THCLK+2 ns

tw(NWE) FMC_NWE low time 6THCLK − 1 6THCLK+2 ns

tsu(NWAIT_NE) FMC_NWAIT valid before FMC_NEx high 6THCLK+1.5 - ns
FMC_NEx hold time after FMC_NWAIT
th(NE_NWAIT) 4THCLK+1 - ns
invalid
1. CL = 30 pF.
2. Evaluated by characterization.

Figure 57. Asynchronous multiplexed PSRAM/NOR read waveforms

tw(NE)

FMC_ NE
tv(NOE_NE) t h(NE_NOE)

FMC_NOE

t w(NOE)

FMC_NWE

tv(A_NE) th(A_NOE)

FMC_ A[25:16] Address

tv(BL_NE) th(BL_NOE)

FMC_ NBL[1:0] NBL

th(Data_NE)
tsu(Data_NE)
t v(A_NE) tsu(Data_NOE) th(Data_NOE)

FMC_ AD[15:0] Address Data

t v(NADV_NE) th(AD_NADV)
tw(NADV)

FMC_NADV

FMC_NWAIT
th(NE_NWAIT)

tsu(NWAIT_NE)

MS32755V1

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Table 91. Asynchronous multiplexed PSRAM/NOR read timings(1)(2)

Symbol Parameter Min Max Unit

tw(NE) FMC_NE low time 3THCLK − 1 3THCLK+0.5 ns

tv(NOE_NE) FMC_NEx low to FMC_NOE low 2THCLK − 0.5 2THCLK ns
ttw(NOE) FMC_NOE low time THCLK − 1 THCLK+1 ns
th(NE_NOE) FMC_NOE high to FMC_NE high hold time 1 - ns
tv(A_NE) FMC_NEx low to FMC_A valid - 2 ns
tv(NADV_NE) FMC_NEx low to FMC_NADV low 0 2 ns
tw(NADV) FMC_NADV low time THCLK − 0.5 THCLK+0.5 ns
FMC_AD(address) valid hold time after
th(AD_NADV) 0 - ns
FMC_NADV high)
th(A_NOE) Address hold time after FMC_NOE high THCLK − 0.5 - ns
th(BL_NOE) FMC_BL time after FMC_NOE high 0 - ns
tv(BL_NE) FMC_NEx low to FMC_BL valid - 2 ns
tsu(Data_NE) Data to FMC_NEx high setup time THCLK+1.5 - ns
tsu(Data_NOE) Data to FMC_NOE high setup time THCLK+1 - ns
th(Data_NE) Data hold time after FMC_NEx high 0 - ns
th(Data_NOE) Data hold time after FMC_NOE high 0 - ns
1. CL = 30 pF.
2. Evaluated by characterization.

Table 92. Asynchronous multiplexed PSRAM/NOR read-NWAIT timings(1)(2)

Symbol Parameter Min Max Unit

tw(NE) FMC_NE low time 8THCLK+0.5 8THCLK+2 ns

tw(NOE) FMC_NWE low time 5THCLK − 1 5THCLK +1.5 ns

tsu(NWAIT_NE) FMC_NWAIT valid before FMC_NEx high 5THCLK +1.5 - ns
FMC_NEx hold time after FMC_NWAIT
th(NE_NWAIT) 4THCLK+1 - ns
invalid
1. CL = 30 pF.
2. Evaluated by characterization.

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Figure 58. Asynchronous multiplexed PSRAM/NOR write waveforms

tw(NE)

FMC_ NEx

FMC_NOE
tv(NWE_NE) tw(NWE) t h(NE_NWE)

FMC_NWE

tv(A_NE) th(A_NWE)

FMC_ A[25:16] Address

tv(BL_NE) th(BL_NWE)

FMC_ NBL[1:0] NBL

t v(A_NE) t v(Data_NADV) th(Data_NWE)

FMC_ AD[15:0] Address Data

t v(NADV_NE) th(AD_NADV)

tw(NADV)

FMC_NADV

FMC_NWAIT
th(NE_NWAIT)

tsu(NWAIT_NE)
MS32756V1

Table 93. Asynchronous multiplexed PSRAM/NOR write timings(1)(2)

Symbol Parameter Min Max Unit

tw(NE) FMC_NE low time 4THCLK 4THCLK+0.5 ns

tv(NWE_NE) FMC_NEx low to FMC_NWE low THCLK − 1 THCLK+0.5 ns
tw(NWE) FMC_NWE low time 2THCLK 2THCLK+0.5 ns
th(NE_NWE) FMC_NWE high to FMC_NE high hold time THCLK - ns
tv(A_NE) FMC_NEx low to FMC_A valid - 0 ns
tv(NADV_NE) FMC_NEx low to FMC_NADV low 0.5 1 ns
tw(NADV) FMC_NADV low time THCLK − 0.5 THCLK+ 0.5 ns
th(AD_NADV) FMC_AD(adress) valid hold time after FMC_NADV high) THCLK − 2 - ns
th(A_NWE) Address hold time after FMC_NWE high THCLK - ns
th(BL_NWE) FMC_BL hold time after FMC_NWE high THCLK − 2 - ns
tv(BL_NE) FMC_NEx low to FMC_BL valid - 2 ns
tv(Data_NADV) FMC_NADV high to Data valid - THCLK +1.5 ns
th(Data_NWE) Data hold time after FMC_NWE high THCLK +0.5 - ns
1. CL = 30 pF.
2. Evaluated by characterization.

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Table 94. Asynchronous multiplexed PSRAM/NOR write-NWAIT timings(1)(2)

Symbol Parameter Min Max Unit

tw(NE) FMC_NE low time 9THCLK 9THCLK+0.5 ns

tw(NWE) FMC_NWE low time 7THCLK 7THCLK+2 ns

tsu(NWAIT_NE) FMC_NWAIT valid before FMC_NEx high 6THCLK+1.5 - ns
FMC_NEx hold time after FMC_NWAIT
th(NE_NWAIT) 4THCLK–1 - ns
invalid
1. CL = 30 pF.
2. Evaluated by characterization.

Synchronous waveforms and timings

Figure 59 through Figure 62 represent synchronous waveforms and Table 95 through
Table 98 provide the corresponding timings. The results shown in these tables are obtained
with the following FMC configuration:
• BurstAccessMode = FMC_BurstAccessMode_Enable;
• MemoryType = FMC_MemoryType_CRAM;
• WriteBurst = FMC_WriteBurst_Enable;
• CLKDivision = 1; (0 is not supported. See the STM32F4xx reference manual: RM0090)
• DataLatency = 1 for NOR flash; DataLatency = 0 for PSRAM
In all timing tables, the THCLK is the HCLK clock period (with maximum
FMC_CLK = 90 MHz).

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Figure 59. Synchronous multiplexed NOR/PSRAM read timings

tw(CLK) tw(CLK) BUSTURN = 0

FMC_CLK

Data latency = 0
td(CLKL-NExL) td(CLKH-NExH)

FMC_NEx
t d(CLKL-NADVL) td(CLKL-NADVH)

FMC_NADV
td(CLKL-AV) td(CLKH-AIV)

FMC_A[25:16]

td(CLKL-NOEL) td(CLKH-NOEH)

FMC_NOE
td(CLKL-ADIV) th(CLKH-ADV)
t d(CLKL-ADV) tsu(ADV-CLKH) tsu(ADV-CLKH) th(CLKH-ADV)

FMC_AD[15:0] AD[15:0] D1 D2
tsu(NWAITV-CLKH) th(CLKH-NWAITV)
FMC_NWAIT
(WAITCFG = 1b,
WAITPOL + 0b)
tsu(NWAITV-CLKH) th(CLKH-NWAITV)
FMC_NWAIT
(WAITCFG = 0b,
WAITPOL + 0b) tsu(NWAITV-CLKH) th(CLKH-NWAITV)

MS32757V1

Table 95. Synchronous multiplexed NOR/PSRAM read timings(1)(2)

Symbol Parameter Min Max Unit

tw(CLK) FMC_CLK period 2THCLK − 1 - ns

td(CLKL-NExL) FMC_CLK low to FMC_NEx low (x=0..2) - 0 ns
td(CLKH_NExH) FMC_CLK high to FMC_NEx high (x= 0…2) THCLK - ns
td(CLKL-NADVL) FMC_CLK low to FMC_NADV low - 0 ns
td(CLKL-NADVH) FMC_CLK low to FMC_NADV high 0 - ns
td(CLKL-AV) FMC_CLK low to FMC_Ax valid (x=16…25) - 0 ns
td(CLKH-AIV) FMC_CLK high to FMC_Ax invalid (x=16…25) 0 - ns
td(CLKL-NOEL) FMC_CLK low to FMC_NOE low - THCLK+0.5 ns
td(CLKH-NOEH) FMC_CLK high to FMC_NOE high THCLK − 0.5 - ns
td(CLKL-ADV) FMC_CLK low to FMC_AD[15:0] valid - 0.5 ns
td(CLKL-ADIV) FMC_CLK low to FMC_AD[15:0] invalid 0 - ns

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Table 95. Synchronous multiplexed NOR/PSRAM read timings(1)(2) (continued)

Symbol Parameter Min Max Unit

FMC_A/D[15:0] valid data before FMC_CLK

tsu(ADV-CLKH) 5 - ns
high
th(CLKH-ADV) FMC_A/D[15:0] valid data after FMC_CLK high 0 - ns
tsu(NWAIT-CLKH) FMC_NWAIT valid before FMC_CLK high 4 - ns
th(CLKH-NWAIT) FMC_NWAIT valid after FMC_CLK high 0 - ns
1. CL = 30 pF.
2. Evaluated by characterization.

Figure 60. Synchronous multiplexed PSRAM write timings

tw(CLK) tw(CLK) BUSTURN = 0

FMC_CLK

Data latency = 0
td(CLKL-NExL) td(CLKH-NExH)

FMC_NEx
td(CLKL-NADVL) td(CLKL-NADVH)

FMC_NADV
td(CLKL-AV) td(CLKH-AIV)

FMC_A[25:16]

td(CLKL-NWEL) td(CLKH-NWEH)

FMC_NWE
td(CLKL-ADIV) td(CLKL-Data)
td(CLKL-ADV) td(CLKL-Data)

FMC_AD[15:0] AD[15:0] D1 D2

FMC_NWAIT
(WAITCFG = 0b,
WAITPOL + 0b) tsu(NWAITV-CLKH) th(CLKH-NWAITV)

td(CLKH-NBLH)

FMC_NBL

MS32758V1

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Table 96. Synchronous multiplexed PSRAM write timings(1)(2)

Symbol Parameter Min Max Unit

tw(CLK) FMC_CLK period, VDD range= 2.7 to 3.6 V 2THCLK − 1 - ns

td(CLKL-NExL) FMC_CLK low to FMC_NEx low (x=0..2) - 1.5 ns
td(CLKH-NExH) FMC_CLK high to FMC_NEx high (x= 0…2) THCLK - ns
td(CLKL-NADVL) FMC_CLK low to FMC_NADV low - 0 ns
td(CLKL-NADVH) FMC_CLK low to FMC_NADV high 0 - ns
td(CLKL-AV) FMC_CLK low to FMC_Ax valid (x=16…25) - 0 ns
td(CLKH-AIV) FMC_CLK high to FMC_Ax invalid (x=16…25) THCLK - ns
td(CLKL-NWEL) FMC_CLK low to FMC_NWE low - 0 ns
t(CLKH-NWEH) FMC_CLK high to FMC_NWE high THCLK −0.5 - ns
td(CLKL-ADV) FMC_CLK low to FMC_AD[15:0] valid - 3 ns
td(CLKL-ADIV) FMC_CLK low to FMC_AD[15:0] invalid 0 - ns
td(CLKL-DATA) FMC_A/D[15:0] valid data after FMC_CLK low - 3 ns
td(CLKL-NBLL) FMC_CLK low to FMC_NBL low 0 - ns
td(CLKH-NBLH) FMC_CLK high to FMC_NBL high THCLK −0.5 - ns
tsu(NWAIT-CLKH) FMC_NWAIT valid before FMC_CLK high 4 - ns
th(CLKH-NWAIT) FMC_NWAIT valid after FMC_CLK high 0 - ns
1. CL = 30 pF.
2. Evaluated by characterization.

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Figure 61. Synchronous non-multiplexed NOR/PSRAM read timings

tw(CLK) tw(CLK)

FMC_CLK
td(CLKL-NExL) td(CLKH-NExH)
Data latency = 0
FMC_NEx
td(CLKL-NADVL) td(CLKL-NADVH)

FMC_NADV
td(CLKL-AV) td(CLKH-AIV)

FMC_A[25:0]

td(CLKL-NOEL) td(CLKH-NOEH)

FMC_NOE
tsu(DV-CLKH) th(CLKH-DV)
tsu(DV-CLKH) th(CLKH-DV)

FMC_D[15:0] D1 D2

tsu(NWAITV-CLKH) th(CLKH-NWAITV)
FMC_NWAIT
(WAITCFG = 1b,
WAITPOL + 0b)
tsu(NWAITV-CLKH) t h(CLKH-NWAITV)
FMC_NWAIT
(WAITCFG = 0b,
WAITPOL + 0b)
tsu(NWAITV-CLKH) th(CLKH-NWAITV)

MS32759V1

Table 97. Synchronous non-multiplexed NOR/PSRAM read timings(1)(2)

Symbol Parameter Min Max Unit

tw(CLK) FMC_CLK period 2THCLK − 1 - ns

t(CLKL-NExL) FMC_CLK low to FMC_NEx low (x=0..2) - 0.5 ns
td(CLKH-
FMC_CLK high to FMC_NEx high (x= 0…2) THCLK - ns
NExH)

td(CLKL-
FMC_CLK low to FMC_NADV low - 0 ns
NADVL)

td(CLKL-
FMC_CLK low to FMC_NADV high 0 - ns
NADVH)

td(CLKL-AV) FMC_CLK low to FMC_Ax valid (x=16…25) - 0 ns

td(CLKH-AIV) FMC_CLK high to FMC_Ax invalid (x=16…25) THCLK − 0.5 - ns
td(CLKL-NOEL) FMC_CLK low to FMC_NOE low - THCLK+2 ns
td(CLKH-
FMC_CLK high to FMC_NOE high THCLK − 0.5 - ns
NOEH)

tsu(DV-CLKH) FMC_D[15:0] valid data before FMC_CLK high 5 - ns

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Table 97. Synchronous non-multiplexed NOR/PSRAM read timings(1)(2) (continued)

Symbol Parameter Min Max Unit

th(CLKH-DV) FMC_D[15:0] valid data after FMC_CLK high 0 - ns

t(NWAIT-CLKH) FMC_NWAIT valid before FMC_CLK high 4 - -
th(CLKH-
FMC_NWAIT valid after FMC_CLK high 0 - -
NWAIT)

1. CL = 30 pF.
2. Guaranteed by characterization results.

Figure 62. Synchronous non-multiplexed PSRAM write timings

tw(CLK) tw(CLK)

FMC_CLK

td(CLKL-NExL) td(CLKH-NExH)
Data latency = 0
FMC_NEx

td(CLKL-NADVL) td(CLKL-NADVH)
FMC_NADV

td(CLKL-AV) td(CLKH-AIV)

FMC_A[25:0]

td(CLKL-NWEL) td(CLKH-NWEH)
FMC_NWE

td(CLKL-Data) td(CLKL-Data)

FMC_D[15:0] D1 D2

FMC_NWAIT
(WAITCFG = 0b, WAITPOL + 0b) tsu(NWAITV-CLKH) td(CLKH-NBLH)
th(CLKH-NWAITV)
FMC_NBL

MS32760V1

Table 98. Synchronous non-multiplexed PSRAM write timings(1)(2)

Symbol Parameter Min Max Unit

t(CLK) FMC_CLK period 2THCLK − 1 - ns

td(CLKL-NExL) FMC_CLK low to FMC_NEx low (x=0..2) - 0.5 ns
t(CLKH-NExH) FMC_CLK high to FMC_NEx high (x= 0…2) THCLK - ns
td(CLKL-NADVL) FMC_CLK low to FMC_NADV low - 0 ns
td(CLKL-NADVH) FMC_CLK low to FMC_NADV high 0 - ns
td(CLKL-AV) FMC_CLK low to FMC_Ax valid (x=16…25) - 0 ns

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Table 98. Synchronous non-multiplexed PSRAM write timings(1)(2) (continued)

Symbol Parameter Min Max Unit

td(CLKH-AIV) FMC_CLK high to FMC_Ax invalid (x=16…25) 0 - ns

td(CLKL-NWEL) FMC_CLK low to FMC_NWE low - 0 ns
td(CLKH-NWEH) FMC_CLK high to FMC_NWE high THCLK −0.5 - ns
td(CLKL-Data) FMC_D[15:0] valid data after FMC_CLK low - 2.5 ns
td(CLKL-NBLL) FMC_CLK low to FMC_NBL low 0 - ns
td(CLKH-NBLH) FMC_CLK high to FMC_NBL high THCLK −0.5 - ns
tsu(NWAIT-CLKH) FMC_NWAIT valid before FMC_CLK high 4 - -
th(CLKH-NWAIT) FMC_NWAIT valid after FMC_CLK high 0 - -
1. CL = 30 pF.
2. Evaluated by characterization.

PC Card/CompactFlash controller waveforms and timings

Figure 63 through Figure 68 represent synchronous waveforms, and Table 99 and
Table 100 provide the corresponding timings. The results shown in this table are obtained
with the following FMC configuration:
• COM.FMC_SetupTime = 0x04;
• COM.FMC_WaitSetupTime = 0x07;
• COM.FMC_HoldSetupTime = 0x04;
• COM.FMC_HiZSetupTime = 0x00;
• ATT.FMC_SetupTime = 0x04;
• ATT.FMC_WaitSetupTime = 0x07;
• ATT.FMC_HoldSetupTime = 0x04;
• ATT.FMC_HiZSetupTime = 0x00;
• IO.FMC_SetupTime = 0x04;
• IO.FMC_WaitSetupTime = 0x07;
• IO.FMC_HoldSetupTime = 0x04;
• IO.FMC_HiZSetupTime = 0x00;
• TCLRSetupTime = 0;
• TARSetupTime = 0.
In all timing tables, the THCLK is the HCLK clock period.

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Figure 63. PC Card/CompactFlash controller waveforms for common memory read

access

FMC_NCE4_2(1)
FMC_NCE4_1

tv(NCEx-A) th(NCEx-AI)

FMC_A[10:0]

th(NCEx-NREG)
td(NREG-NCEx)
th(NCEx-NIORD)
td(NIORD-NCEx)
th(NCEx-NIOWR)
FMC_NREG
FMC_NIOWR
FMC_NIORD

FMC_NWE

td(NCE4_1-NOE) tw(NOE)
FMC_NOE

tsu(D-NOE) th(NOE-D)

FMC_D[15:0]

MS32761V1

1. FMC_NCE4_2 remains high (inactive during 8-bit access.

Figure 64. PC Card/CompactFlash controller waveforms for common memory write

access

FMC_NCE4_1

FMC_NCE4_2 High

tv(NCE4_1-A) th(NCE4_1-AI)
FMC_A[10:0]

th(NCE4_1-NREG)
td(NREG-NCE4_1)
th(NCE4_1-NIORD)
td(NIORD-NCE4_1)
th(NCE4_1-NIOWR)
FMC_NREG
FMC_NIOWR
FMC_NIORD
td(NCE4_1-NWE) tw(NWE) td(NWE-NCE4_1)
FMC_NWE

FMC_NOE
MEMxHIZ =1
td(D-NWE)
tv(NWE-D) th(NWE-D)

FMC_D[15:0]

MS32762V1

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Figure 65. PC Card/CompactFlash controller waveforms for attribute memory

read access

FMC_NCE4_1

tv(NCE4_1-A) th(NCE4_1-AI)
FMC_NCE4_2 High

FMC_A[10:0]

FMC_NIOWR
FMC_NIORD
td(NREG-NCE4_1) th(NCE4_1-NREG)

FMC_NREG

FMC_NWE

td(NCE4_1-NOE) tw(NOE) td(NOE-NCE4_1)

FMC_NOE

tsu(D-NOE) th(NOE-D)

FMC_D[15:0](1)

MS32763V1

1. Only data bits 0...7 are read (bits 8...15 are disregarded).

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Figure 66. PC Card/CompactFlash controller waveforms for attribute memory

write access

FMC_NCE4_1

FMC_NCE4_2 High

tv(NCE4_1-A) th(NCE4_1-AI)

FMC_A[10:0]

FMC_NIOWR
FMC_NIORD
td(NREG-NCE4_1) th(NCE4_1-NREG)

FMC_NREG
td(NCE4_1-NWE) tw(NWE)

FMC_NWE
td(NWE-NCE4_1)

FMC_NOE

tv(NWE-D)

FMC_D[7:0](1)

MS32764V1

1. Only data bits 0...7 are driven (bits 8...15 remains Hi-Z).

Figure 67. PC Card/CompactFlash controller waveforms for I/O space read access

FMC_NCE4_1
FMC_NCE4_2
tv(NCEx-A) th(NCE4_1-AI)

FMC_A[10:0]

FMC_NREG
FMC_NWE
FMC_NOE

FMC_NIOWR
td(NIORD-NCE4_1) tw(NIORD)

FMC_NIORD

tsu(D-NIORD) td(NIORD-D)

FMC_D[15:0]

MS32765V1

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Figure 68. PC Card/CompactFlash controller waveforms for I/O space write access

FMC_NCE4_1
FMC_NCE4_2
tv(NCEx-A) th(NCE4_1-AI)

FMC_A[10:0]

FMC_NREG
FMC_NWE
FMC_NOE

FMC_NIORD
t d(NCE4_1-NIOWR) tw(NIOWR)

FMC_NIOWR
ATTxHIZ =1
th(NIOWR-D)
tv(NIOWR-D)

FMC_D[15:0]

MS32766V1

Table 99. Switching characteristics for PC Card/CF read and write cycles
in attribute/common space(1)(2)
Symbol Parameter Min Max Unit

tv(NCEx-A) FMC_Ncex low to FMC_Ay valid - 0 ns

th(NCEx_AI) FMC_NCEx high to FMC_Ax invalid 0 - ns
td(NREG-NCEx) FMC_NCEx low to FMC_NREG valid - 1 ns
th(NCEx-NREG) FMC_NCEx high to FMC_NREG invalid THCLK − 2 - ns
td(NCEx-NWE) FMC_NCEx low to FMC_NWE low - 5THCLK ns
tw(NWE) FMC_NWE low width 8THCLK − 0.5 8THCLK+0.5 ns
td(NWE_NCEx) FMC_NWE high to FMC_NCEx high 5THCLK+1 - ns
tV(NWE-D) FMC_NWE low to FMC_D[15:0] valid - 0 ns
th(NWE-D) FMC_NWE high to FMC_D[15:0] invalid 9THCLK − 0.5 - ns
td(D-NWE) FMC_D[15:0] valid before FMC_NWE high 13THCLK − 3 - ns
td(NCEx-NOE) FMC_NCEx low to FMC_NOE low - 5THCLK ns
tw(NOE) FMC_NOE low width 8 THCLK − 0.5 8 THCLK+0.5 ns
td(NOE_NCEx) FMC_NOE high to FMC_NCEx high 5THCLK − 1 - ns
tsu (D-NOE) FMC_D[15:0] valid data before FMC_NOE high THCLK - ns
th(NOE-D) FMC_NOE high to FMC_D[15:0] invalid 0 - ns
1. CL = 30 pF.
2. Guaranteed by characterization results.

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Table 100. Switching characteristics for PC Card/CF read and write cycles
in I/O space(1)(2)
Symbol Parameter Min Max Unit

tw(NIOWR) FMC_NIOWR low width 8THCLK − 0.5 - ns

tv(NIOWR-D) FMC_NIOWR low to FMC_D[15:0] valid - 0 ns
th(NIOWR-D) FMC_NIOWR high to FMC_D[15:0] invalid 9THCLK − 2 - ns
td(NCE4_1-NIOWR) FMC_NCE4_1 low to FMC_NIOWR valid - 5THCLK ns
th(NCEx-NIOWR) FMC_NCEx high to FMC_NIOWR invalid 5THCLK - ns
td(NIORD-NCEx) FMC_NCEx low to FMC_NIORD valid - 5THCLK ns
th(NCEx-NIORD) FMC_NCEx high to FMC_NIORD) valid 6THCLK+2 - ns
tw(NIORD) FMC_NIORD low width 8THCLK − 0.5 8THCLK+0.5 ns
tsu(D-NIORD) FMC_D[15:0] valid before FMC_NIORD high THCLK - ns
td(NIORD-D) FMC_D[15:0] valid after FMC_NIORD high 0 - ns
1. CL = 30 pF.
2. Evaluated by characterization.

NAND controller waveforms and timings

Figure 69 and Figure 70 represent synchronous waveforms, and Table 101 and Table 102
provide the corresponding timings. The results shown in this table are obtained with the
following FMC configuration:
• COM.FMC_SetupTime = 0x01;
• COM.FMC_WaitSetupTime = 0x03;
• COM.FMC_HoldSetupTime = 0x02;
• COM.FMC_HiZSetupTime = 0x01;
• ATT.FMC_SetupTime = 0x01;
• ATT.FMC_WaitSetupTime = 0x03;
• ATT.FMC_HoldSetupTime = 0x02;
• ATT.FMC_HiZSetupTime = 0x01;
• Bank = FMC_Bank_NAND;
• MemoryDataWidth = FMC_MemoryDataWidth_16b;
• ECC = FMC_ECC_Enable;
• ECCPageSize = FMC_ECCPageSize_512Bytes;
• TCLRSetupTime = 0;
• TARSetupTime = 0.
In all timing tables, the THCLK is the HCLK clock period.

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Figure 69. NAND controller waveforms for read access

FMC_NCEx

ALE (FMC_A17)
CLE (FMC_A16)
td(ALE-NOE) th(NOE-ALE)

FMC_NWE

tw(NOE)

FMC_NOE (NRE)

tsu(D-NOE) th(NOE-D)

FMC_D[y:0]

MSv73150V1

1. y= 7 or 15 depending on the NAND flash memory interface.

Figure 70. NAND controller waveforms for write access

FMC_NCEx

ALE (FMC_A17)
CLE (FMC_A16)
td(ALE-NWE) tw(NWE) th(NWE-ALE)

FMC_NWE

FMC_NOE (NRE)

td(D-NWE)

tv(NWE-D) th(NWE-D)

FMC_D[y:0]

MSv73151V1

2. y= 7 or 15 depending on the NAND flash memory interface.

Table 101. Switching characteristics for NAND Flash read cycles(1)

N

Symbol Parameter Min Max Unit

tw(N0E) FMC_NOE low width 4THCLK − 0.5 4THCLK+0.5 ns

tsu(D-NOE) FMC_D[15-0] valid data before FMC_NOE high 9 - ns
th(NOE-D) FMC_D[15-0] valid data after FMC_NOE high 0 - ns
td(ALE-NOE) FMC_ALE valid before FMC_NOE low - 3THCLK − 0.5 ns
th(NOE-ALE) FMC_NWE high to FMC_ALE invalid 3THCLK − 2 - ns
1. CL = 30 pF.

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Table 102. Switching characteristics for NAND Flash write cycles(1)

Symbol Parameter Min Max Unit

tw(NWE) FMC_NWE low width 4THCLK 4THCLK+1 ns

tv(NWE-D) FMC_NWE low to FMC_D[15-0] valid 0 - ns
th(NWE-D) FMC_NWE high to FMC_D[15-0] invalid 3THCLK − 1 - ns
td(D-NWE) FMC_D[15-0] valid before FMC_NWE high 5THCLK − 3 - ns
td(ALE-NWE) FMC_ALE valid before FMC_NWE low - 3THCLK −0.5 ns
th(NWE-ALE) FMC_NWE high to FMC_ALE invalid 3THCLK − 1 - ns
1. CL = 30 pF.

SDRAM waveforms and timings

Figure 71. SDRAM read access waveforms (CL = 1)

FMC_SDCLK
td(SDCLKL_AddC)
td(SDCLKL_AddR) th(SDCLKL_AddR)

FMC_A[12:0] Row n Col1 Col2 Coli Coln

th(SDCLKL_AddC)

td(SDCLKL_SNDE) th(SDCLKL_SNDE)

FMC_SDNE[1:0]
td(SDCLKL_NRAS) th(SDCLKL_NRAS)

FMC_SDNRAS

td(SDCLKL_NCAS) th(SDCLKL_NCAS)

FMC_SDNCAS

FMC_SDNWE
tsu(SDCLKH_Data) th(SDCLKH_Data)

FMC_D[31:0] Data1 Data2 Datai Datan

MS32751V2

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Table 103. SDRAM read timings(1)(2)

Symbol Parameter Min Max Unit

tw(SDCLK) FMC_SDCLK period 2THCLK − 0.5 2THCLK+0.5

tsu(SDCLKH _Data) Data input setup time 2 -
th(SDCLKH_Data) Data input hold time 0 -
td(SDCLKL_Add) Address valid time - 1.5
td(SDCLKL- SDNE) Chip select valid time - 0.5
ns
th(SDCLKL_SDNE) Chip select hold time 0 -
td(SDCLKL_SDNRAS) SDNRAS valid time - 0.5
th(SDCLKL_SDNRAS) SDNRAS hold time 0 -
td(SDCLKL_SDNCAS) SDNCAS valid time - 0.5
th(SDCLKL_SDNCAS) SDNCAS hold time 0 -
1. CL = 30 pF on data and address lines. CL=15pF on FMC_SDCLK.
2. Evaluated by characterization.

Table 104. LPSDR SDRAM read timings(1)(2)

Symbol Parameter Min Max Unit

tW(SDCLK) FMC_SDCLK period 2THCLK − 0.5 2THCLK+0.5

tsu(SDCLKH_Data) Data input setup time 2.5 -
th(SDCLKH_Data) Data input hold time 0 -
td(SDCLKL_Add) Address valid time - 1
td(SDCLKL_SDNE) Chip select valid time - 1
ns
th(SDCLKL_SDNE) Chip select hold time 1 -
td(SDCLKL_SDNRAS SDNRAS valid time - 1
th(SDCLKL_SDNRAS) SDNRAS hold time 1 -
td(SDCLKL_SDNCAS) SDNCAS valid time - 1
th(SDCLKL_SDNCAS) SDNCAS hold time 1 -
1. CL = 10 pF.
2. Evaluated by characterization.

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Figure 72. SDRAM write access waveforms

FMC_SDCLK
td(SDCLKL_AddC)
td(SDCLKL_AddR) th(SDCLKL_AddR)

FMC_A[12:0] Row n Col1 Col2 Coli Coln

th(SDCLKL_AddC)

td(SDCLKL_SNDE) th(SDCLKL_SNDE)

FMC_SDNE[1:0]
td(SDCLKL_NRAS) th(SDCLKL_NRAS)

FMC_SDNRAS

td(SDCLKL_NCAS) th(SDCLKL_NCAS)

FMC_SDNCAS
td(SDCLKL_NWE) th(SDCLKL_NWE)

FMC_SDNWE
td(SDCLKL_Data)

FMC_D[31:0] Data1 Data2 Datai Datan

td(SDCLKL_NBL) th(SDCLKL_Data)

FMC_NBL[3:0]
MS32752V2

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Table 105. SDRAM write timings(1)(2)

Symbol Parameter Min Max Unit

tw(SDCLK) FMC_SDCLK period 2THCLK − 0.5 2THCLK+0.5

td(SDCLKL _Data) Data output valid time - 3.5
th(SDCLKL _Data) Data output hold time 0 -
td(SDCLKL_Add) Address valid time - 1.5
td(SDCLKL_SDNWE) SDNWE valid time - 1
th(SDCLKL_SDNWE) SDNWE hold time 0 -
td(SDCLKL_ SDNE) Chip select valid time - 0.5
ns
th(SDCLKL-_SDNE) Chip select hold time 0 -
td(SDCLKL_SDNRAS) SDNRAS valid time - 2
th(SDCLKL_SDNRAS) SDNRAS hold time 0 -
td(SDCLKL_SDNCAS) SDNCAS valid time - 0.5
td(SDCLKL_SDNCAS) SDNCAS hold time 0 -
td(SDCLKL_NBL) NBL valid time - 0.5
th(SDCLKL_NBL) NBLoutput time 0 -
1. CL = 30 pF on data and address lines. CL=15 pF on FMC_SDCLK.
2. Evaluated by characterization.

Table 106. LPSDR SDRAM write timings(1)(2)

Symbol Parameter Min Max Unit

tw(SDCLK) FMC_SDCLK period 2THCLK − 0.5 2THCLK+0.5

td(SDCLKL _Data) Data output valid time - 5
th(SDCLKL _Data) Data output hold time 2 -
td(SDCLKL_Add) Address valid time - 2.8
td(SDCLKL-SDNWE) SDNWE valid time - 2
th(SDCLKL-SDNWE) SDNWE hold time 1 -
td(SDCLKL- SDNE) Chip select valid time - 1.5
ns
th(SDCLKL- SDNE) Chip select hold time 1 -
td(SDCLKL-SDNRAS) SDNRAS valid time - 1.5
th(SDCLKL-SDNRAS) SDNRAS hold time 1.5 -
td(SDCLKL-SDNCAS) SDNCAS valid time - 1.5
td(SDCLKL-SDNCAS) SDNCAS hold time 1.5 -
td(SDCLKL_NBL) NBL valid time - 1.5
th(SDCLKL-NBL) NBL output time 1.5 -
1. CL = 10 pF.
2. Evaluated by characterization.

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6.3.27 Camera interface (DCMI) timing specifications

Unless otherwise specified, the parameters given in Table 107 for DCMI are derived
from tests performed under the ambient temperature, fHCLK frequency, and VDD supply
voltage summarized in Table 17, with the following configuration:
• DCMI_PIXCLK polarity: falling
• DCMI_VSYNC and DCMI_HSYNC polarity: high
• Data formats: 14 bits

Table 107. DCMI characteristics

Symbol Parameter Min Max Unit

Frequency ratio DCMI_PIXCLK/fHCLK - 0.4

DCMI_PIXCLK Pixel clock input - 54 MHz
DPixel Pixel clock input duty cycle 30 70 %
tsu(DATA) Data input setup time 2 -
th(DATA) Data input hold time 2.5 -
tsu(HSYNC) ns
DCMI_HSYNC/DCMI_VSYNC input setup time 0.5 -
tsu(VSYNC)
th(HSYNC)
DCMI_HSYNC/DCMI_VSYNC input hold time 1 -
th(VSYNC)

Figure 73. DCMI timing diagram

1/DCMI_PIXCLK

DCMI_PIXCLK

tsu(HSYNC) th(HSYNC)

DCMI_HSYNC

tsu(VSYNC) th(HSYNC)

DCMI_VSYNC
tsu(DATA) th(DATA)

DATA[0:13]

MS32414V2

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6.3.28 LCD-TFT controller (LTDC) characteristics

Unless otherwise specified, the parameters given in Table 108 for LCD-TFT are derived
from tests performed under the ambient temperature, fHCLK frequency, and VDD supply
voltage summarized in Table 17, with the following configuration:
• LCD_CLK polarity: high
• LCD_DE polarity: low
• LCD_VSYNC and LCD_HSYNC polarity: high
• Pixel formats: 24 bits

Table 108. LTDC characteristics

Symbol Parameter Min Max Unit

fCLK LTDC clock output frequency - 83 MHz

DCLK LTDC clock output duty cycle 45 55 %
tw(CLKH)
Clock High time, low time tw(CLK)/2 − 0.5 tw(CLK)/2+0.5
tw(CLKL)
tv(DATA) Data output valid time - 3.5

th(DATA) Data output hold time 1.5 -

tv(HSYNC)
HSYNC/VSYNC/DE output valid ns
tv(VSYNC) - 2.5
time
tv(DE)
th(HSYNC)
HSYNC/VSYNC/DE output hold
th(VSYNC) 2 -
time

th(DE)

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Figure 74. LCD-TFT horizontal timing diagram

tCLK

LCD_CLK

LCD_VSYNC

tv(HSYNC) tv(HSYNC)

LCD_HSYNC
tv(DE) th(DE)

LCD_DE
tv(DATA)
LCD_R[0:7]
LCD_G[0:7] Pixel Pixel Pixel
1 2 N
LCD_B[0:7]
th(DATA)

HSYNC Horizontal Active width Horizontal

width back porch back porch

One line
MS32749V1

Figure 75. LCD-TFT vertical timing diagram

tCLK

LCD_CLK

tv(VSYNC) tv(VSYNC)

LCD_VSYNC

LCD_R[0:7]
LCD_G[0:7] M lines data
LCD_B[0:7]

VSYNC Vertical Active width Vertical

width back porch back porch

One frame
MS32750V1

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6.3.29 SD/SDIO MMC card host interface (SDIO) characteristics

Unless otherwise specified, the parameters given in Table 109 for the SDIO/MMC interface
are derived from tests performed under the ambient temperature, fPCLK2 frequency and VDD
supply voltage conditions summarized in Table 17, with the following configuration:
• Output speed is set to OSPEEDRy[1:0] = 10
• Capacitive load C = 30 pF
• Measurement points are done at CMOS levels: 0.5VDD
Refer to Section 6.3.17: I/O port characteristics for more details on the input/output
characteristics.

Figure 76. SDIO high-speed mode

Figure 77. SD default mode

CK
tOVD tOHD
D, CMD
(output)

ai14888

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Table 109. Dynamic characteristics: SD / MMC characteristics(1)(2)

Symbol Parameter Conditions Min Typ Max Unit

fPP Clock frequency in data transfer mode - 0 - 48 MHz

- SDIO_CK/fPCLK2 frequency ratio - - - 8/3 -
tW(CKL) Clock low time fpp =48 MHz 8.5 9 -
ns
tW(CKH) Clock high time fpp =48 MHz 8.3 10 -

CMD, D inputs (referenced to CK) in MMC and SD HS mode

tISU Input setup time HS fpp =48 MHz 3.5 - -

ns
tIH Input hold time HS fpp =48 MHz 0 - -

CMD, D outputs (referenced to CK) in MMC and SD HS mode

tOV Output valid time HS fpp =48 MHz - 4.5 7

ns
tOH Output hold time HS fpp =48 MHz 3 - -

CMD, D inputs (referenced to CK) in SD default mode

tISUD Input setup time SD fpp =24 MHz 1.5 - -

ns
tIHD Input hold time SD fpp =24 MHz 0.5 - -

CMD, D outputs (referenced to CK) in SD default mode

tOVD Output valid default time SD fpp =24 MHz - 4.5 6.5
ns
tOHD Output hold default time SD fpp =24 MHz 3.5 - -

1. Evaluated by characterization.
2. VDD = 2.7 to 3.6 V.

6.3.30 RTC characteristics

Table 110. RTC characteristics

Symbol Parameter Conditions Min Max

Any read/write operation

- fPCLK1/RTCCLK frequency ratio 4 -
from/to an RTC register

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7 Package information

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.

7.1 Device marking

Refer to technical note “Reference device marking schematics for STM32 microcontrollers
and microprocessors” (TN1433 ) available on www.st.com, for the location of pin 1 / ball A1
as well as the location and orientation of the marking areas versus pin 1 / ball A1.
Parts marked as “ES”, “E” or accompanied by an engineering sample notification letter, are
not yet qualified and therefore not approved for use in production. ST is not responsible for
any consequences resulting from such use. In no event will ST be liable for the customer
using any of these engineering samples in production. ST’s Quality department must be
contacted prior to any decision to use these engineering samples to run a qualification
activity.
A WLCSP simplified marking example (if any) is provided in the corresponding package
information subsection.

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7.2 LQFP100 package information (1L)

This LQFP is 100 lead, 14 x 14 mm low-profile quad flat package.
Note: See list of notes in the notes section.

Figure 78. LQFP100 - Outline(15)

ș2 ș
(2)
R1

H
R2

B
B-
N
O
(6)

TI
C
SE
D1/4 B GAUGE PLANE

S
E1/4
B ș
4x N/4 TIPS
ș L
4x (L1)
aaa C A-B D
bbb H A-B D (1) (11)

BOTTOM VIEW SECTION A-A

(N-4) x e (13)

C
A (9) (11)
0.05
ccc C b WITH PLATING
A2 A1 b aaa C A-BD
(12)

SIDE VIEW

D (4)
(11) c
(2) (5) D1 c1 (11)

D (3)
(10) (4)
N

b1 BASE METAL
1 (11)
2
3 E1/4 SECTION B-B

D1/4 (6) (2)

A B
(5)

E1 E

SECTION A-A

A A

TOP VIEW 1L_LQFP100_ME_V3

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Table 111. LQFP100 - Mechanical data

millimeters inches(14)
Symbol
Min Typ Max Min Typ Max

A - 1.50 1.60 - 0.0590 0.0630

(12)
A1 0.05 - 0.15 0.0019 - 0.0059
A2 1.35 1.40 1.45 0.0531 0.0551 0.0570
(9)(11)
b 0.17 0.22 0.27 0.0067 0.0087 0.0106
(11)
b1 0.17 0.20 0.23 0.0067 0.0079 0.0090
(11)
c 0.09 - 0.20 0.0035 - 0.0079
c1(11) 0.09 - 0.16 0.0035 - 0.0063
(4)
D 16.00 BSC 0.6299 BSC
(2)(5)
D1 14.00 BSC 0.5512 BSC
E(4) 16.00 BSC 0.6299 BSC
E1(2)(5) 14.00 BSC 0.5512 BSC
e 0.50 BSC 0.0197 BSC
L 0.45 0.60 0.75 0.177 0.0236 0.0295
(1)(11)
L1 1.00 - 0.0394 -
N(13) 100
θ 0° 3.5° 7° 0° 3.5° 7°

θ1 0° - - 0° - -

θ2 10° 12° 14° 10° 12° 14°

θ3 10° 12° 14° 10° 12° 14°

R1 0.08 - - 0.0031 - -
R2 0.08 - 0.20 0.0031 - 0.0079
S 0.20 - - 0.0079 - -
aaa(1) 0.20 0.0079
(1)
bbb 0.20 0.0079
ccc(1) 0.08 0.0031
(1)
ddd 0.08 0.0031

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Notes:
1. Dimensioning and tolerancing schemes conform to ASME Y14.5M-1994.
2. The Top package body size may be smaller than the bottom package size by as much
as 0.15 mm.
3. Datums A-B and D to be determined at datum plane H.
4. To be determined at seating datum plane C.
5. Dimensions D1 and E1 do not include mold flash or protrusions. Allowable mold flash
or protrusions is “0.25 mm” per side. D1 and E1 are Maximum plastic body size
dimensions including mold mismatch.
6. Details of pin 1 identifier are optional but must be located within the zone indicated.
7. All Dimensions are in millimeters.
8. No intrusion allowed inwards the leads.
9. Dimension “b” does not include dambar protrusion. Allowable dambar protrusion shall
not cause the lead width to exceed the maximum “b” dimension by more than 0.08 mm.
Dambar cannot be located on the lower radius or the foot. Minimum space between
protrusion and an adjacent lead is 0.07 mm for 0.4 mm and 0.5 mm pitch packages.
10. Exact shape of each corner is optional.
11. These dimensions apply to the flat section of the lead between 0.10 mm and 0.25 mm
from the lead tip.
12. A1 is defined as the distance from the seating plane to the lowest point on the package
body.
13. “N” is the number of terminal positions for the specified body size.
14. Values in inches are converted from mm and rounded to 4 decimal digits.
15. Drawing is not to scale.

Figure 79. LQFP100 - Footprint example

75 51

76 50
0.5

0.3

16.7 14.3

100 26

1.2
1 25

12.3

16.7

1L_LQFP100_FP_V1

1. Dimensions are expressed in millimeters.

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7.3 WLCSP143 package information

Figure 80. WLCSP143 - 143-ball, 4.521x 5.547 mm, 0.4 mm pitch wafer level chip scale
package outline
A1 ball location bbb
e1
F
G

Detail A

e2

A3
e A2
Bottom view
Bump side A
Side view
D

Bump A3

eee A1
E
b
A1 orientation ccc Z XY Seating
ddd Z
reference plane
Detail A
Rotated 90°
aaa
Top view
Wafer back side
A0WE_ME_V2

1. Drawing is not to scale.

Table 112. WLCSP143 - 143-ball, 4.521x 5.547 mm, 0.4 mm pitch wafer level chip scale
package mechanical data
millimeters inches(1)
Symbol
Min Typ Max Min Typ Max
A 0.525 0.555 0.585 0.0207 0.0219 0.0230
A1 - 0.175 - - 0.0069 -
A2 - 0.380 - - 0.0150 -

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Table 112. WLCSP143 - 143-ball, 4.521x 5.547 mm, 0.4 mm pitch wafer level chip scale
package mechanical data (continued)
millimeters inches(1)
Symbol
Min Typ Max Min Typ Max
(2)
A3 - 0.025 - - 0.0010 -
(3)
b 0.220 0.250 0.280 0.0087 0.0098 0.0110
D 4.486 4.521 4.556 0.1766 0.1780 0.1794
E 5.512 5.547 5.582 0.2170 0.2184 0.2198
e - 0.400 - - 0.0157 -
e1 - 4.000 - - 0.1575 -
e2 - 4.800 - - 0.1890 -
F - 0.2605 - - 0.0103 -
G - 0.3735 - - 0.0147 -
aaa - - 0.100 - - 0.0039
bbb - - 0.100 - - 0.0039
ccc - - 0.100 - - 0.0039
ddd - - 0.050 - - 0.0020
eee - - 0.050 - - 0.0020
1. Values in inches are converted from mm and rounded to 4 decimal digits.
2. Back side coating.
3. Dimension is measured at the maximum bump diameter parallel to primary datum Z.

Figure 81. WLCSP143 - 143-ball, 4.521x 5.547 mm, 0.4 mm pitch wafer level chip scale
package recommended footprint

Dpad
Dsm

A0WE_FP_V1

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Table 113. WLCSP143 recommended PCB design rules

Dimension Recommended values

Pitch 0.4
Dpad 0.225 mm
0.290 mm typ. (depends on the soldermask
Dsm
registration tolerance)
Stencil opening 0.250 mm
Stencil thickness 0.100 mm

7.3.1 Device marking for WLCSP143

The following figure gives an example of topside marking orientation versus ball A 1
identifier location.
Other optional marking or inset/upset marks, which depend on assembly location, are not
indicated below.

Figure 82. WLCSP143 marking example (package top view)

ball A1
Product
identification(1)

Date code = Year+Week

Y WW Revision code

MSv37234V3

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7.4 LQFP144 package information (1A)

This LQFP is a 144-pin, 20 x 20 mm low-profile quad flat package.
Note: See list of notes in the notes section.

Figure 83. LQFP144 - Outline(15)

BOTTOM VIEW

2 1
(2)
R1

H
R2

B
B-
N
O
TI
C
SE
(6) B GAUGE PLANE

0.25
D 1/4
S
B
L
3
E 1/4 (L1)
(1) (11)
4x N/4 TIPS
aaa C A-B D SECTION A-A
bbb H A-B D 4x

(N-4)x e
C
A
0.05 (12) ddd C A-B D
A2 A1 b ccc C

D (4)
D1 (2) (5)
(10) (3) D (9) (11)
N (4)
b WITH PLATING

1
2
3 E 1/4

(11) (11)
c c1
(6)
D 1/4 (2)
(3) A B (3) (5)

E1 E b1 BASE METAL
(11)

SECTION B-B

A A
(Section A-A)

TOP VIEW
1A_LQFP144_ME_V2

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Table 114. LQFP144 - Mechanical data

millimeters inches(14)
Symbol
Min Typ Max Min Typ Max

A - - 1.60 - - 0.0630
(12)
A1 0.05 - 0.15 0.0020 - 0.0059
A2 1.35 1.40 1.45 0.0531 0.0551 0.0571
(9)(11)
b 0.17 0.22 0.27 0.0067 0.0087 0.0106
(11)
b1 0.17 0.20 0.23 0.0067 0.0079 0.0090
(11)
c 0.09 - 0.20 0.0035 - 0.0079
c1(11) 0.09 - 0.16 0.0035 - 0.0063
(4)
D 22.00 BSC 0.8661 BSC
(2)(5)
D1 20.00 BSC 0.7874 BSC
E(4) 22.00 BSC 0.8661 BSC
E1(2)(5) 20.00 BSC 0.7874 BSC
e 0.50 BSC 0.0197 BSC
L 0.45 0.60 0.75 0.0177 0.0236 0.0295
L1 1.00 REF 0.0394 REF
N(13) 144
θ 0° 3.5° 7° 0° 3.5° 7°

θ1 0° - - 0° - -

θ2 10° 12° 14° 10° 12° 14°

θ3 10° 12° 14° 10° 12° 14°

R1 0.08 - - 0.0031 - -
R2 0.08 - 0.20 0.0031 - 0.0079
S 0.20 - - 0.0079 - -
aaa 0.20 0.0079
bbb 0.20 0.0079
ccc 0.08 0.0031
ddd 0.08 0.0031

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Notes:
1. Dimensioning and tolerancing schemes conform to ASME Y14.5M-1994.
2. The Top package body size may be smaller than the bottom package size by as much
as 0.15 mm.
3. Datums A-B and D to be determined at datum plane H.
4. To be determined at seating datum plane C.
5. Dimensions D1 and E1 do not include mold flash or protrusions. Allowable mold flash
or protrusions is “0.25 mm” per side. D1 and E1 are Maximum plastic body size
dimensions including mold mismatch.
6. Details of pin 1 identifier are optional but must be located within the zone indicated.
7. All Dimensions are in millimeters.
8. No intrusion allowed inwards the leads.
9. Dimension “b” does not include dambar protrusion. Allowable dambar protrusion shall
not cause the lead width to exceed the maximum “b” dimension by more than 0.08 mm.
Dambar cannot be located on the lower radius or the foot. Minimum space between
protrusion and an adjacent lead is 0.07 mm for 0.4 mm and 0.5 mm pitch packages.
10. Exact shape of each corner is optional.
11. These dimensions apply to the flat section of the lead between 0.10 mm and 0.25 mm
from the lead tip.
12. A1 is defined as the distance from the seating plane to the lowest point on the package
body.
13. “N” is the number of terminal positions for the specified body size.
14. Values in inches are converted from mm and rounded to 4 decimal digits.
15. Drawing is not to scale.

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Figure 84. LQFP144 - Footprint example

108 73
1.35

109 0.35 72

0.50

19.90 17.85
22.60

144 37

1 36

19.90
22.60
1A_LQFP144_FP

1. Dimensions are expressed in millimeters.

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7.5 LQFP176 package information (1T)

This LQFP is a 176-pin, 24 x 24 mm, 0.5 mm pitch, low profile quad flat package.
Note: See list of notes in the notes section.

Figure 85. LQFP176 - Outline(15)

ș2 ș1

(2) R1

H R2

B(See SECTION B-B)

(6) GAUGE PLANE
0.25
D1/4
S
B ș
L
E1/4 ș
4x N/4 TIPS 4x (L1)
(1) (11)
bbb H A-B D
aaa C A-B D

BOTTOM VIEW SECTION A-A

A2 0.05
(N-4) x e 
C
A
A1 (12) ddd C A-BD ccc C
b

SIDE VIEW

D (4)
(2) (5) D1
D  (9) (11)
(10) N
(4) b WITH PLATING

E1/4

(11) c c1 (11)
D1/4 (6) (5)

A B (2)
E1 E b1 BASE METAL
(11)

SECTION A-A
A A
SECTION B-B

TOP VIEW 1T_LQFP176_ME_V2

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Table 115. LQFP176 - Mechanical data

millimeters inches(14)
Symbol
Min Typ Max Min Typ Max
A - - 1.600 - - 0.0630
A1(12) 0.050 - 0.150 0.0020 - 0.0059
A2 1.350 1.400 1.450 0.0531 0.0551 0.0571
(9)(11)
b 0.170 0.220 0.270 0.0067 0.0087 0.0106
(11)
b1 0.170 0.200 0.230 0.0067 0.0079 0.0091
c(11) 0.090 - 0.200 0.0035 - 0.0079
(11)
c1 0.090 - 0.160 0.0035 - 0.063
(4)
D 26.000 1.0236
(2)(5)
D1 24.000 0.9449
E(4) 26.000 0.0197
(2)(5)
E1 24.000 0.9449
e 0.500 0.1970
L 0.450 0.600 0.750 0.0177 0.0236 0.0295
L1(1)(11) 1 0.0394 REF
N(13) 176
θ 0° 3.5° 7° 0° 3.5° 7°
θ1 0° - - 0° - -
θ2 10° 12° 14° 10° 12° 14°
θ3 10° 12° 14° 10° 12° 14°
R1 0.080 - - 0.0031 - -
R2 0.080 - 0.200 0.0031 - 0.0079
S 0.200 - - 0.0079 - -
(1)
aaa 0.200 0.0079
(1)
bbb 0.200 0.0079
(1)
ccc 0.080 0.0031
ddd(1) 0.080 0.0031

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Notes:
1. Dimensioning and tolerancing schemes conform to ASME Y14.5M-1994.
2. The Top package body size may be smaller than the bottom package size by as much
as 0.15 mm.
3. Datums A-B and D to be determined at datum plane H.
4. To be determined at seating datum plane C.
5. Dimensions D1 and E1 do not include mold flash or protrusions. Allowable mold flash
or protrusions is “0.25 mm” per side. D1 and E1 are Maximum plastic body size
dimensions including mold mismatch.
6. Details of pin 1 identifier are optional but must be located within the zone indicated.
7. All Dimensions are in millimeters.
8. No intrusion allowed inwards the leads.
9. Dimension “b” does not include dambar protrusion. Allowable dambar protrusion shall
not cause the lead width to exceed the maximum “b” dimension by more than 0.08 mm.
Dambar cannot be located on the lower radius or the foot. Minimum space between
protrusion and an adjacent lead is 0.07 mm for 0.4 mm and 0.5 mm pitch packages.
10. Exact shape of each corner is optional.
11. These dimensions apply to the flat section of the lead between 0.10 mm and 0.25 mm
from the lead tip.
12. A1 is defined as the distance from the seating plane to the lowest point on the package
body.
13. “N” is the number of terminal positions for the specified body size.
14. Values in inches are converted from mm and rounded to 4 decimal digits.
15. Drawing is not to scale.

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Figure 86. LQFP176 - Footprint example

1.2
176 133
1 0.5 132

0.3
26.7

21.8

44 89
45 88
1.2

21.8

26.7

1T_FP_V1

1. Dimensions are expressed in millimeters.

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7.6 LQFP208 package information

This LQFP is a 208-pin, 28 x 28 mm low-profile quad flat package.
Note: See list of notes in the notes section.

Figure 87. LQFP208 - Outline(15)

BOTTOM VIEW

2 1
(2)
R1
R2

B
H

B-
N
O
TI
C
SE
B GAUGE PLANE

0.25
D 1/4 (6)
S
B
L
3
(L1) (1) (11)

E 1/4 SECTION A-A

4x N/4 TIPS
aaa C A-B D bbb H A-B D 4x

(N – 4)x e (13)
C
A
A2
b ddd C A-B D
0.05 A1(12) ccc C
D (4)
(2) (5) D1
D (3)
(10) N
(4) (9) (11)
b WITH
1 PLATING
2
3
E 1/4
(11) (11)
c c1

D 1/4 (6)
b1 BASE METAL
(3) A B (3) (11)

E1 E SECTION B-B
(2)
(5)

A A
(Section A-A)

TOP VIEW UH_LQFP208_ME_V2

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Table 116. LQFP208 - Mechanical data

millimeters inches(15)
Symbol
Min Typ Max Min Typ Max

A - - 1.60 - - 0.0630
(12)
A1 0.05 - 0.15 0.0020 - 0.0059
A2 1.35 1.40 1.45 0.0531 0.0551 0.0571
(9)(11)
b 0.17 0.22 0.27 0.0067 0.0087 0.0106
(11)
b1 0.17 0.20 0.23 0.0067 0.0079 0.0091
(11)
c 0.09 - 0.20 0.0035 - 0.0079
c1(11) 0.09 - 0.16 0.0035 - 0.0063
(4)
D 30.00 BSC 1.1732 BSC
(2)(5)
D1 28.00 BSC 1.0945 BSC
E(4) 30.00 BSC 1.1732 BSC
E1(2)(5) 28.00 BSC 1.0945 BSC
e 0.50 BSC 0.0197 BSC
L 0.45 0.60 0.75 0.0177 0.0236 0.0295
L1 1.00 REF 0.0394 REF
N(13) 208
θ 0° 3.5° 7° 0° 3.5° 7°

θ1 0° - - 0° - -

θ2 10° 12° 14° 10° 12° 14°

θ3 10° 12° 14° 10° 12° 14°

R1 0.08 - - 0.0031 - -
R2 0.08 - 0.20 0.0031 - 0.0079
S 0.20 - - 0.0079 - -
aaa(1)(7) 0.20 0.0079
(1)(7)
bbb 0.20 0.0079
ccc(1)(7) 0.08 0.0031
(1)(7)
ddd 0.08 0.0031

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Notes:
1. Dimensioning and tolerancing schemes conform to ASME Y14.5M-1994.
2. The Top package body size may be smaller than the bottom package size by as much
as 0.15 mm.
3. Datums A-B and D to be determined at datum plane H.
4. To be determined at seating datum plane C.
5. Dimensions D1 and E1 do not include mold flash or protrusions. Allowable mold flash
or protrusions is “0.25 mm” per side. D1 and E1 are Maximum plastic body size
dimensions including mold mismatch.
6. Details of pin 1 identifier are optional but must be located within the zone indicated.
7. All Dimensions are in millimeters.
8. No intrusion allowed inwards the leads.
9. Dimension “b” does not include dambar protrusion. Allowable dambar protrusion shall
not cause the lead width to exceed the maximum “b” dimension by more than 0.08 mm.
Dambar cannot be located on the lower radius or the foot. Minimum space between
protrusion and an adjacent lead is 0.07 mm for 0.4 mm and 0.5 mm pitch packages.
10. Exact shape of each corner is optional.
11. These dimensions apply to the flat section of the lead between 0.10 mm and 0.25 mm
from the lead tip.
12. A1 is defined as the distance from the seating plane to the lowest point on the package
body.
13. “N” is the number of terminal positions for the specified body size.
14. Values in inches are converted from mm and rounded to 4 decimal digits.
15. Drawing is not to scale.

Figure 88. LQFP208 - footprint example

208 157

1 156
0.50 1.25
0.30
28.3
30.7

52 105

53 104 1.2
25.8
30.7
UH_LQFP208_FP_V3

1. Dimensions are expressed in millimeters.

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7.7 UFBGA169 package information (A0YV)

This UFBGA is a 169-ball, 7 x 7 mm, 0.50 mm pitch, ultra fine pitch ball grid array package.

Figure 89. UFBGA169 - Outline

E1
e SE

N
M
L
K e
J
H
G D1
SD F
E
D
C
B
A
1 2 3 4 5 6 7 8 9 10 11 12 13
Øb (169 balls)
A1 ball pad
Ø eee M C A B
corner Ø fff M C

BOTTOM VIEW
Detail A
A3 ccc C
A Mold resin A2

Seating plane
C Solder balls A1 A5
2 ddd C Substrate
SIDE VIEW C
DETAIL A
B E
A

A1 ball pad
3 corner (DATUM A)

(DATUM B)

aaa C
(4x)
TOP VIEW A0YV_UFBGA169_ME_V2

1. Drawing is not to scale.

2. Primary datum C is defined by the plane established by the contact points of three or more solder balls that
support the device when it is placed on top of a planar surface.
3. The terminal (ball) A1 corner must be identified on the top surface of the package by using a corner
chamfer, ink or metallized markings, or other feature of package body or integral heat slug. A distinguish
feature is allowable on the bottom surface of the package to identify the terminal A1 corner. Exact shape of
each corner is optional.

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Table 117. UFBGA169 - Mechanical data

millimeters inches(1)
Symbol
Min. Typ. Max. Min. Typ. Max.

A(2) - - 0.60 - - 0.0236

(3)
A1 0.05 - - 0.0020 - -
A2 - 0.43 - - 0.0169 -
(4)
b 0.23 0.28 0.33 0.0091 0.0110 0.0130
(5)
D 7.00 BSC 0.2756 BSC
(5)
D1 6.00 BSC 0.2362 BSC
E(5) 7.00 BSC 0.2756 BSC
(5)
E1 6.00 BSC 0.2362 BSC
(5)(6)
e 0.50 BSC 0.0197 BSC
N(7) 169
SD(5)(8) 0.50 BSC 0.0197 BSC
SE(5)(8) 0.50 BSC 0.0197 BSC
(9)
aaa 0.15 0.0059
(9)
ccc 0.20 0.0079
ddd(9) 0.08 0.0031
(9)
eee 0.15 0.0059
(9)
fff 0.05 0.0020
1. Values in inches are converted from mm and rounded to 4 decimal digits.
2. The profile height, A, is the distance from the seating plane to the highest point on the package. It is
measured perpendicular to the seating plane.
3. A1 is defined as the distance from the seating plane to the lowest point on the package body.
4. Dimension b is measured at the maximum diameter of the terminal (ball) in a plane parallel to primary
datum C.
5. BSC stands for BASIC dimensions. It corresponds to the nominal value and has no tolerance. For
tolerances refer to form and position table.
6. e represents the solder ball grid pitch.
7. N represents the total number of balls on the BGA.
8. Basic dimensions SD and SE are defined with respect to datums A and B. It defines the position of the
centre ball(s) in the outer row or column of a fully populated matrix.
9. Tolerance of form and position drawing

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Figure 90. UFBGA169 - Footprint example

Dpad

Dsm
BGA_WLCSP_FT_V1

Table 118. UFBGA169 - Example of PCB design rules (0.5 mm pitch BGA)
Dimension Values

Pitch 0.5 mm
Dpad 0.27 mm
0.35 mm typ. (depends on the soldermask
Dsm
registration tolerance)
Solder paste 0.27 mm aperture diameter.

Note: Non-solder mask defined (NSMD) pads are recommended.

Note: 4 to 6 mils solder paste screen printing process.

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7.8 UFBGA(176+25) package information (A0E7)

This UFBGA is a 176+25-ball, 10 x 10 mm, 0.65 mm pitch, ultra fine pitch ball grid array
package.

Figure 91. UFBGA(176+25) - Outline

Seating plane
C A4
ddd C

A
A2 A3 b A1
A1 ball A
A1 ball index E
identifier area
E1
e F
A
F

D1 D

e
B
R
15 1
Øb (176 + 25 balls)
BOTTOM VIEW TOP VIEW
Ø eee M C A B
Ø fff M C

A0E7_ME_V10

1. Drawing is not to scale.

Table 119. UFBGA(176+25) - Mechanical data

millimeters inches(1)
Symbol
Min. Typ. Max. Min. Typ. Max.

A - - 0.600 - - 0.0236
A1 0.050 0.080 0.110 0.0020 0.0031 0.0043
A2 - 0.450 - - 0.0177 -
A3 - 0.130 - - 0.0051 -
A4 - 0.320 - - 0.0126 -
b 0.240 0.290 0.340 0.0094 0.0114 0.0134
D 9.850 10.000 10.150 0.3878 0.3937 0.3996
D1 - 9.100 - - 0.3583 -
E 9.850 10.000 10.150 0.3878 0.3937 0.3996
E1 - 9.100 - - 0.3583 -
e - 0.650 - - 0.0256 -
F - 0.450 - - 0.0177 -
ddd - - 0.080 - - 0.0031

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Package information STM32F427xx STM32F429xx

Table 119. UFBGA(176+25) - Mechanical data (continued)

millimeters inches(1)
Symbol
Min. Typ. Max. Min. Typ. Max.

eee - - 0.150 - - 0.0059

fff - - 0.050 - - 0.0020
1. Values in inches are converted from mm and rounded to 4 decimal digits.

Figure 92. UFBGA(176+25) - Footprint example

Dpad

Dsm
BGA_WLCSP_FT_V1

Table 120. UFBGA(176+25) - Example of PCB design rules (0.65 mm pitch BGA)
Dimension Values

Pitch 0.65 mm
Dpad 0.300 mm
0.400 mm typ. (depends on the soldermask
Dsm
registration tolerance)
Stencil opening 0.300 mm
Stencil thickness Between 0.100 mm and 0.125 mm
Pad trace width 0.100 mm

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7.9 TFBGA216 package information (A0L2)

This TFBGA is a 216-ball, 13 x 13 mm, 0.8 mm pitch, fine pitch ball grid array package.

Figure 93. TFBGA216 - Outline

Z Seating plane

ddd Z

A2
A1 A
D1 A1 ball A1 ball X
identifier index area D
e F

A
G

E1 E

e
Y
R
15 1
BOTTOM VIEW Øb (216 balls) TOP VIEW
Ø eee M Z Y X
Ø fff M Z
A0L2_ME_V3

1. Drawing is not to scale.

2. • The terminal A1 corner must be identified on the top surface by using a corner chamfer, ink or metalized
markings, or other feature of package body or integral heat slug.
• A distinguishing feature is allowable on the bottom surface of the package to identify the terminal A1
corner. Exact shape of each corner is optional

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Package information STM32F427xx STM32F429xx

Table 121. TFBGA216 - Mechanical data

millimeters inches(1)
Symbol
Min Typ Max Min Typ Max

A - - 1.200 - - 0.0472
(2)
A1 0.150 - - 0.0059 - -
A2 - 0.760 - - 0.0299 -
(3)
b 0.350 0.400 0.450 0.0138 0.0157 0.0177
D 12.850 13.000 13.150 0.5059 0.5118 0.5177
D1 - 11.200 - - 0.4409 -
E 12.850 13.000 13.150 0.5059 0.5118 0.5177
E1 - 11.200 - - 0.4409 -
e - 0.800 - - 0.0315 -
F - 0.900 - - 0.0354 -
G - 0.900 - - 0.0354 -
ddd - - 0.100 - - 0.0039
(4)
eee - - 0.150 - - 0.0059
(5)
fff - - 0.080 - - 0.0031
1. Values in inches are converted from mm and rounded to four decimal digits.
2. • The terminal A1 corner must be identified on the top surface by using a corner chamfer, ink or metallized
markings, or other feature of package body or integral heat slug.
• A distinguishing feature is allowable on the bottom surface of the package to identify the terminal A1
corner. Exact shape of each corner is optional.
3. Initial ball equal 0.350 mm.
4. The tolerance of position that controls the location of the pattern of balls with respect to datums A and B.
For each ball there is a cylindrical tolerance zone eee perpendicular to datum C and located on true
position with respect to datums A and B as defined by e. The axis perpendicular to datum C of each ball
must lie within this tolerance zone.
5. The tolerance of position that controls the location of the balls within the matrix with respect to each other.
For each ball there is a cylindrical tolerance zone fff perpendicular to datum C and located on true position
as defined by e. The axis perpendicular to datum C of each ball must lie within this tolerance zone. Each
tolerance zone fff in the array is contained entirely in the respective zone eee above The axis of each ball
must lie simultaneously in both tolerance zones.

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Figure 94. TFBGA216 - Footprint example

Dpad

Dsm
BGA_WLCSP_FT_V1

Table 122. TFBGA216 - Example of PCB design rules (0.8 mm pitch)

Dimension Values

Pitch 0.8 mm
Dpad 0.400 mm
0.470 mm typ. (depends on the soldermask
Dsm
registration tolerance)
Stencil opening 0.400 mm
Stencil thickness Between 0.100 mm and 0.125 mm
Pad trace width 0.120 mm

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Package information STM32F427xx STM32F429xx

7.10 Thermal characteristics

The maximum chip-junction temperature, TJ max, in degrees Celsius, may be calculated
using the following equation:
TJ max = TA max + (PD max x θJA)
Where:
• TA max is the maximum ambient temperature in °C,
• θJA is the package junction-to-ambient thermal resistance, in °C/W,
• PD max is the sum of PINT max and PI/O max (PD max = PINT max + PI/Omax),
• PINT max is the product of IDD and VDD, expressed in Watts. This is the maximum chip
internal power.
PI/O max represents the maximum power dissipation on output pins where:
PI/O max = ∑ (VOL × IOL) + ∑((VDD – VOH) × IOH),
taking into account the actual VOL / IOL and VOH / IOH of the I/Os at low and high level in the
application.

Table 123. Package thermal characteristics

Symbol Parameter Value Unit

Thermal resistance junction-ambient

43
LQFP100 - 14 × 14 mm / 0.5 mm pitch
Thermal resistance junction-ambient
31.2
WLCSP143
Thermal resistance junction-ambient
40
LQFP144 - 20 × 20 mm / 0.5 mm pitch
Thermal resistance junction-ambient
38
LQFP176 - 24 × 24 mm / 0.5 mm pitch
ΘJA °C/W
Thermal resistance junction-ambient
19
LQFP208 - 28 × 28 mm / 0.5 mm pitch
Thermal resistance junction-ambient
52
UFBGA169 - 7 × 7mm / 0.5 mm pitch
Thermal resistance junction-ambient
39
UFBGA176 - 10× 10 mm / 0.5 mm pitch
Thermal resistance junction-ambient
29
TFBGA216 - 13 × 13 mm / 0.8 mm pitch

Reference document
JESD51-2 Integrated Circuits Thermal Test Method Environment Conditions - Natural
Convection (Still Air). Available from www.jedec.org.

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STM32F427xx STM32F429xx Ordering information

8 Ordering information

Example: STM32 F 429 V I T 6 xxx

Device family
STM32 = Arm-based 32-bit microcontroller

Product type
F = general-purpose

Device subfamily
427= STM32F427xx, USB OTG FS/HS, camera interface,
Ethernet
429= STM32F429xx, USB OTG FS/HS, camera interface,
Ethernet, LCD-TFT

Pin count
V = 100 pins
Z = 143 and 144 pins
A = 169 pins
I = 176 pins
B = 208 pins
N = 216 pins

Flash memory size

E = 512 Kbytes of Flash memory
G = 1024 Kbytes of Flash memory
I = 2048 Kbytes of Flash memory

Package
T = LQFP
H = BGA
Y = WLCSP

Temperature range
6 = Industrial temperature range, –40 to 85 °C.
7 = Industrial temperature range, –40 to 105 °C.

Options
xxx = programmed parts
TR = tape and reel

For a list of available options (speed, package, etc.) or for further information on any aspect
of this device, please contact your nearest ST sales office.

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Recommendations when using internal reset OFF STM32F427xx STM32F429xx

Appendix A Recommendations when using internal reset

OFF

When the internal reset is OFF, the following integrated features are no longer supported:
• The integrated power-on reset (POR) / power-down reset (PDR) circuitry is disabled.
• The brownout reset (BOR) circuitry must be disabled.
• The embedded programmable voltage detector (PVD) is disabled.
• VBAT functionality is no more available and VBAT pin should be connected to VDD.
• The over-drive mode is not supported.

A.1 Operating conditions

Table 124. Limitations depending on the operating power supply range
Maximum
Flash
Operating memory Maximum Flash
Possible Flash
power ADC access memory access
I/O operation memory
supply operation frequency frequency with
operations
range with no wait wait states (1)(2)
states
(fFlashmax)

Conversion 168 MHz with 8 8-bit erase and

VDD =1.7 to – No I/O
time up to 20 MHz(4) wait states and program
2.1 V(3) compensation
1.2 Msps over-drive OFF operations only
1. Applicable only when the code is executed from Flash memory. When the code is executed from RAM, no
wait state is required.
2. Thanks to the ART accelerator and the 128-bit Flash memory, the number of wait states given here does
not impact the execution speed from Flash memory since the ART accelerator allows to achieve a
performance equivalent to 0 wait state program execution.
3. VDD/VDDA minimum value of 1.7 V, with the use of an external power supply supervisor (refer to
Section 3.17.1: Internal reset ON).
4. Prefetch is not available. Refer to AN3430 application note for details on how to adjust performance and
power.

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Appendix B Application block diagrams

B.1 USB OTG full speed (FS) interface solutions

Figure 95. USB controller configured as peripheral-only and used
in Full speed mode

VDD
5V to VDD
Volatge regulator (1)

STM32F4xx

VBUS

USB Std-B connector

DM
PA11//PB14
OSC_IN DP
PA12/PB15
VSS
OSC_OUT

MS19000V5

1. External voltage regulator only needed when building a VBUS powered device.
2. The same application can be developed using the OTG HS in FS mode to achieve enhanced performance
thanks to the large Rx/Tx FIFO and to a dedicated DMA controller.

Figure 96. USB controller configured as host-only and used in full speed mode
VDD

EN
GPIO Current limiter 5 V Pwr
Overcurrent
power switch(1)
GPIO+IRQ
STM32F4xx
VBUS
USB Std-A connector

DM
PA11//PB14
OSC_IN
DP
PA12/PB15
VSS
OSC_OUT

MS19001V4

1. The current limiter is required only if the application has to support a VBUS powered device. A basic power
switch can be used if 5 V are available on the application board.
2. The same application can be developed using the OTG HS in FS mode to achieve enhanced performance
thanks to the large Rx/Tx FIFO and to a dedicated DMA controller.

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Application block diagrams STM32F427xx STM32F429xx

Figure 97. USB controller configured in dual mode and used in full speed mode
VDD
5 V to VDD
voltage regulator (1)

VDD
EN
GPIO
Current limiter 5 V Pwr
Overcurrent power switch(2)
GPIO+IRQ

STM32F4xx

USBmicro-AB connector
VBUS
PA9/PB13
DM
PA11/PB14
OSC_IN DP
PA12/PB15
(3)
ID
PA10/PB12
OSC_OUT
VSS

MS19002V3

1. External voltage regulator only needed when building a VBUS powered device.
2. The current limiter is required only if the application has to support a VBUS powered device. A basic power
switch can be used if 5 V are available on the application board.
3. The ID pin is required in dual role only.
4. The same application can be developed using the OTG HS in FS mode to achieve enhanced performance
thanks to the large Rx/Tx FIFO and to a dedicated DMA controller.

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B.2 USB OTG high speed (HS) interface solutions

Figure 98. USB controller configured as peripheral, host, or dual-mode
and used in high speed mode

STM32F4xx

DP
FS PHY not connected
USB HS DM
OTG Ctrl
DP
ULPI_CLK
DM
ULPI_D[7:0]
ID(2) USB
ULPI_DIR
ULPI VBUS connector
ULPI_STP
VSS
ULPI_NXT

High speed
OTG PHY

XT1
PLL
24 or 26 MHz XT(1)

MCO1 or MCO2
XI

MS19005V2

1. It is possible to use MCO1 or MCO2 to save a crystal. It is however not mandatory to clock the STM32F42x
with a 24 or 26 MHz crystal when using USB HS. The above figure only shows an example of a possible
connection.
2. The ID pin is required in dual role only.

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Application block diagrams STM32F427xx STM32F429xx

B.3 Ethernet interface solutions

Figure 99. MII mode using a 25 MHz crystal

STM32
MCU MII_TX_CLK
Ethernet MII_TX_EN Ethernet
MAC 10/100 MII_TXD[3:0] PHY 10/100
MII_CRS
MII
MII_COL = 15 pins
HCLK(1)
MII_RX_CLK MII + MDC
MII_RXD[3:0] = 17 pins
IEEE1588 PTP MII_RX_DV
Timer MII_RX_ER
input
trigger Timestamp MDIO
TIM2 comparator
MDC

PPS_OUT(2)

XTAL PLL HCLK

25 MHz OSC
MCO1/MCO2 PHY_CLK 25 MHz
XT1

MS19968V1

1. fHCLK must be greater than 25 MHz.

2. Pulse per second when using IEEE1588 PTP optional signal.

Figure 100. RMII with a 50 MHz oscillator

STM32
Ethernet
PHY 10/100
MCU RMII_TX_EN
Ethernet
MAC 10/100 RMII_TXD[1:0]
RMII_RXD[1:0] RMII
HCLK(1) = 7 pins
RMII_CRX_DV
RMII + MDC
RMII_REF_CLK = 9 pins
IEEE1588 PTP
Timer MDIO
input MDC
trigger Timestamp
TIM2 comparator

/2 or /20
2.5 or 25 MHz synchronous 50 MHz

OSC PLL HCLK

50 MHz
PHY_CLK 50 MHz XT1 50 MHz

MS19969V1

1. fHCLK must be greater than 25 MHz.

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Figure 101. RMII with a 25 MHz crystal and PHY with PLL

STM32F Ethernet
PHY 10/100
MCU RMII_TX_EN
Ethernet
MAC 10/100 RMII_TXD[1:0]
RMII_RXD[1:0] RMII
HCLK(1)
RMII_CRX_DV = 7 pins
RMII_REF_CLK REF_CLK RMII + MDC
IEEE1588 PTP = 9 pins
Timer MDIO
input
trigger Timestamp MDC
TIM2 comparator

/2 or /20
2.5 or 25 MHz synchronous 50 MHz

XTAL PLL HCLK PLL

25 MHz OSC
MCO1/MCO2 PHY_CLK 25 MHz XT1

MS19970V1

1. fHCLK must be greater than 25 MHz.

2. The 25 MHz (PHY_CLK) must be derived directly from the HSE oscillator, before the PLL block.

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Important security notice STM32F427xx STM32F429xx

9 Important security notice

The STMicroelectronics group of companies (ST) places a high value on product security,
which is why the ST product(s) identified in this documentation may be certified by various
security certification bodies and/or may implement our own security measures as set forth
herein. However, no level of security certification and/or built-in security measures can
guarantee that ST products are resistant to all forms of attacks. As such, it is the
responsibility of each of ST's customers to determine if the level of security provided in an
ST product meets the customer needs both in relation to the ST product alone, as well as
when combined with other components and/or software for the customer end product or
application. In particular, take note that:
• ST products may have been certified by one or more security certification bodies, such
as Platform Security Architecture (www.psacertified.org) and/or Security Evaluation
standard for IoT Platforms (www.trustcb.com). For details concerning whether the ST
product(s) referenced herein have received security certification along with the level
and current status of such certification, either visit the relevant certification standards
website or go to the relevant product page on www.st.com for the most up to date
information. As the status and/or level of security certification for an ST product can
change from time to time, customers should re-check security certification status/level
as needed. If an ST product is not shown to be certified under a particular security
standard, customers should not assume it is certified.
• Certification bodies have the right to evaluate, grant and revoke security certification in
relation to ST products. These certification bodies are therefore independently
responsible for granting or revoking security certification for an ST product, and ST
does not take any responsibility for mistakes, evaluations, assessments, testing, or
other activity carried out by the certification body with respect to any ST product.
• Industry-based cryptographic algorithms (such as AES, DES, or MD5) and other open
standard technologies which may be used in conjunction with an ST product are based
on standards which were not developed by ST. ST does not take responsibility for any
flaws in such cryptographic algorithms or open technologies or for any methods which
have been or may be developed to bypass, decrypt or crack such algorithms or
technologies.
• While robust security testing may be done, no level of certification can absolutely
guarantee protections against all attacks, including, for example, against advanced
attacks which have not been tested for, against new or unidentified forms of attack, or
against any form of attack when using an ST product outside of its specification or
intended use, or in conjunction with other components or software which are used by
customer to create their end product or application. ST is not responsible for resistance
against such attacks. As such, regardless of the incorporated security features and/or
any information or support that may be provided by ST, each customer is solely
responsible for determining if the level of attacks tested for meets their needs, both in
relation to the ST product alone and when incorporated into a customer end product or
application.
• All security features of ST products (inclusive of any hardware, software,
documentation, and the like), including but not limited to any enhanced security
features added by ST, are provided on an "AS IS" BASIS. AS SUCH, TO THE EXTENT
PERMITTED BY APPLICABLE LAW, ST DISCLAIMS ALL WARRANTIES, EXPRESS
OR IMPLIED, INCLUDING BUT NOT LIMITED TO THE IMPLIED WARRANTIES OF
MERCHANTABILITY OR FITNESS FOR A PARTICULAR PURPOSE, unless the
applicable written and signed contract terms specifically provide otherwise.

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STM32F427xx STM32F429xx Revision history

10 Revision history

Table 125. Document revision history

Date Revision Changes

19-Mar-2013 1 Initial release.

Added STM32F429xx part numbers and related informations.
STM32F427xx part numbers:
Replaced FSMC by FMC added Chrom-ART Accelerator and SAI
interface.
Increased core, timer, GPIOs, SPI maximum frequencies
Updated Figure 8.Updated Figure 9.
Removed note in Section ·: Standby mode.
Updated Figure 18.
Updated Table 10: STM32F437xx and STM32F439xx pin and ball
definitions and Table 12: STM32F437xx and STM32F439xx alternate
function mapping..
Modified Figure 19: Memory map.
Updated Table 17: General operating conditions, Table 18: Limitations
depending on the operating power supply range. Removed note 1 in
Table 22: reset and power control block characteristics. Added Table
23: Over-drive switching characteristics.
10-Sep-2013 2 Updated Section : Typical and maximum current consumption, Table
34: Switching output I/O current consumption, Table 35: Peripheral
current consumption and Section : On-chip peripheral current
consumption.
Updated Table 36: Low-power mode wakeup timings.
Modified Section : High-speed external user clock generated from an
external source, Section : Low-speed external user clock generated
from an external source, and Section 6.3.10: Internal clock source
characteristics.
Updated Table 43: Main PLL characteristics and Table 45: PLLISAI
(audio and LCD-TFT PLL) characteristics.
Updated Table 52: EMI characteristics.
Updated Table 57: Output voltage characteristics and Table 58: I/O AC
characteristics.
Updated Table 60: TIMx characteristics, Table 61: I2C characteristics,
Table 62: SPI dynamic characteristics, Section : SAI characteristics.
Updated Table 102: SDRAM read timings and Table 104: SDRAM write
timings.

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Revision history STM32F427xx STM32F429xx

Table 125. Document revision history

Date Revision Changes

.Added STM32F429xE part numbers featuring 512 Mbytes of Flash

memory and UFBGA169 package.
Added LPSDR SDRAM.
Changed INTN into INTR in Figure 4: STM32F437xx and
STM32F439xx block diagram.
Added note 4 in Table 2: STM32F427xx and STM32F429xx features
and peripheral counts.
Updated Section 3.15: Boot modes.
Updated for PA4 and PA5 in Table 10: STM32F437xx and
STM32F439xx pin and ball definitions.
Added VIN for BOOT0 pins in Table 14: Voltage characteristics.
Updated Note 6., added Note 1.,and updated maximum VIN for B pins
in Table 17: General operating conditions.
Updated maximum Flash memory access frequency with wait states
for VDD =1.8 to 2.1 V in Table 18: Limitations depending on the
operating power supply range.
Updated Table 24: Typical and maximum current consumption in Run
mode, code with data processing running from Flash memory (ART
accelerator enabled except prefetch) or RAM and Table 25: Typical and
maximum current consumption in Run mode, code with data
24-Jan-2014 3 processing running from Flash memory (ART accelerator disabled).
Updated Table 30: Typical current consumption in Run mode, code
with data processing running from Flash memory or RAM, regulator
ON (ART accelerator enabled except prefetch), VDD=1.7 V, Table 31:
Typical current consumption in Run mode, code with data processing
running from Flash memory, regulator OFF (ART accelerator enabled
except prefetch), and Table 32: Typical current consumption in Sleep
mode, regulator ON, VDD=1.7 V.
Updated Table 57: Output voltage characteristics.
Updated Table 58: I/O AC characteristics. Added Figure 35.
Updated th(SDA), tr(SDA) and tr(SCL) and added tSP in Table 61: I2C
characteristics.
Updated fSCK in Table 62: SPI dynamic characteristics.
Updated Table 70: Dynamic characteristics: USB ULPI.
Updated Section 6.3.26: FMC characteristics conditions. Updated
Figure 73: SDRAM read access waveforms (CL = 1) and Figure 74:
SDRAM write access waveforms. Added Table 103: LPSDR SDRAM
read timings and Table 105: LPSDR SDRAM write timings. Updated
Table 102: SDRAM read timings and Table 104: SDRAM write timings
and added note 2.Table 108: Dynamic characteristics: SD / MMC
characteristics

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Table 125. Document revision history

Date Revision Changes

In the whole document, minimum supply voltage changed to 1.7 V

when external power supply supervisor is used.
Added DCMI_VSYNC alternate function on PG9 and updated note 6.
in Table 10: STM32F437xx and STM32F439xx pin and ball definitions
and Table 12: STM32F437xx and STM32F439xx alternate function
mapping. Added note 2.belowFigure 16: STM32F43x UFBGA169
ballout.
Changed SVGA (800x600) into XGA1024x768) on cover page and in
Section 3.10: LCD-TFT controller (available only on STM32F439xx).
Updated Section 3.18.2: Regulator OFF.
Updated signal corresponding to pin L5 in Figure 12: STM32F43x
WLCSP143 ballout.
Added ACCHSE in Table 39: HSE 4-26 MHz oscillator characteristics
and ACCLSE in Table 40: LSE oscillator characteristics (fLSE = 32.768
kHz).
24-Apr-2014 4 Updated Table 53: ESD absolute maximum ratings.
Updated VIH in Table 56: I/O static characteristics. Added condition
VDD>1.7 V in Table 58: I/O AC characteristics.
Updated conditions in Table 62: SPI dynamic characteristics.
Added ZDRV in Table 67: USB OTG full speed electrical characteristics
Removed note 3 in Table 80: Temperature sensor characteristics.
Added Figure 82: LQFP100 marking example (package top view),
Figure 85: WLCSP143 marking example (package top view), Figure
88: LQFP144 marking example (package top view), Figure 91:
LQFP176 marking (package top view), Figure 94: LQFP208 marking
example (package top view), Figure 97: UFBGA169 marking example
(package top view) and Figure 100: UFBGA176+25 marking example
(package top view).
Added Appendix A: Recommendations when using internal reset OFF.
Removed Internal reset OFF hardware connection appendix.

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Revision history STM32F427xx STM32F429xx

Table 125. Document revision history

Date Revision Changes

Update SPI/IS2 in Table 2: STM32F427xx and STM32F429xx features

and peripheral counts.
Updated LQFP208 in Table 4: Regulator ON/OFF and internal reset
ON/OFF availability.
Updated Figure 19: Memory map.
Changed PLS[2:0]=101 (falling edge) maximum value in Table 22:
reset and power control block characteristics.
Updated current consumption with all peripherals disabled in Table 24:
Typical and maximum current consumption in Run mode, code with
data processing running from Flash memory (ART accelerator
enabled except prefetch) or RAM. Updated note 1. in Table 28: Typical
and maximum current consumptions in Standby mode.
Updated tWUSTOP in Table 36: Low-power mode wakeup timings.
Updated ESD standards and Table 53: ESD absolute maximum
ratings.
Updated Table 56: I/O static characteristics.
Section : I2C interface characteristics: updated section introduction,
removed Table I2C characteristics, Figure I2C bus AC waveforms and
measurement circuit and Table SCL frequency; added Table 61: I2C
analog filter characteristics.
Updated measurement conditions in Table 62: SPI dynamic
characteristics.
Updated Figure 51: Typical connection diagram using the ADC.
19-Feb-2015 5 Updated Section : Device marking for LQFP100.
Updated Figure 83: WLCSP143 - 143-ball, 4.521x 5.547 mm, 0.4 mm
pitch wafer level chip scale package outline and Table 111: WLCSP143
- 143-ball, 4.521x 5.547 mm, 0.4 mm pitch wafer level chip scale
package mechanical data; added Figure 84: WLCSP143 - 143-ball,
4.521x 5.547 mm, 0.4 mm pitch wafer level chip scale recommended
footprint and Table 112: WLCSP143 recommended PCB design rules
(0.4 mm pitch). Updated Figure 85: WLCSP143 marking example
(package top view) and related note. Updated Section : Device
marking for WLCSP143.
Updated Section : Device marking for LQFP144.
Updated Section : Device marking for LQFP176.
Updated Figure 92: LQFP208 - 208-pin, 28 x 28 mm low-profile quad
flat package outline; Updated Section : Device marking for LQFP208.
Modified UFBGA169 pitch, updated Figure 95: UFBGA169 - 169-ball 7
x 7 mm 0.50 mm pitch, ultra fine pitch ball grid array package outline
and Table 116: UFBGA169 - 169-ball 7 x 7 mm 0.50 mm pitch, ultra
fine pitch ball grid array package mechanical data; updated Section :
Device marking for LQFP208.
updated Section : Device marking for UFBGA169, Section : Device
marking for UFBGA176+25 and Section : Device marking for
TFBGA176.
Updated Z pin count in Table : .
?ǣ

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Table 125. Document revision history

Date Revision Changes

Updated notes related to the minimum and maximum values

guaranteed by design, characterization or test in production.
Updated IDD_STOP_UDM in Table 27: Typical and maximum current
consumptions in Stop mode.
Removed note related to tests in production in Table 24: Typical and
maximum current consumption in Run mode, code with data
processing running from Flash memory (ART accelerator enabled
except prefetch) or RAM and Table 26: Typical and maximum current
consumption in Sleep mode.
Updated Table 41: HSI oscillator characteristics. Figure 31 renamed
ACCHSI accuracy versus temperature and updated.
Updated Figure 38: SPI timing diagram - slave mode and CPHA = 0.
Updated Section : Ethernet characteristics.
17-Sep-2015 6 Updated Table 43: Main PLL characteristics, Table 44: PLLI2S (audio
PLL) characteristics and Table 45: PLLISAI (audio and LCD-TFT PLL)
characteristics.
Removed note 1 in Table 75: ADC static accuracy at fADC = 18 MHz,
Table 76: ADC static accuracy at fADC = 30 MHz and Table 77: ADC
static accuracy at fADC = 36 MHz.
Updated td(SDCLKL _Data) and th(SDCLKL _Data) in Table 104:
SDRAM write timings.
Added Figure 96: UFBGA169 - 169-ball, 7 x 7 mm, 0.50 mm pitch, ultra
fine pitch ball grid array recommended footprint and Table 117:
UFBGA169 recommended PCB design rules (0.5 mm pitch BGA).
Added Figure 99: UFBGA176+25-ball, 10 x 10 mm, 0.65 mm pitch,
ultra fine pitch ball grid array package recommended footprint and
Table 119: UFBGA176+25 recommended PCB design rules (0.65 mm
pitch BGA).
Updated |VSSX -VSS| in Table 14: Voltage characteristics to add
VREF-.
Updated td(TXEN) and td(TXD) minimum value in Table 72: Dynamics
characteristics: Ethernet MAC signals for RMII and Table 73: Dynamics
characteristics: Ethernet MAC signals for MII.
Added VREF- in Table 74: ADC characteristics.
Added A1 minimum and maximum values in Table 111: WLCSP143 -
143-ball, 4.521x 5.547 mm, 0.4 mm pitch wafer level chip scale
30-Nov-2015 7 package mechanical data. Updated Figure 86: LQFP144-144-pin, 20 x
20 mm low-profile quad flat package outline.
Updated Figure 98: UFBGA176+25 - ball 10 x 10 mm, 0.65 mm pitch
ultra thin fine pitch ball grid array package outline and Table 118:
UFBGA176+25 - ball, 10 x 10 mm, 0.65 mm pitch, ultra fine pitch ball
grid array package mechanical data. Updated Figure 101: TFBGA216 -
216 ball 13 × 13 mm 0.8 mm pitch thin fine pitch ball grid array package
outline and Table 120: TFBGA216 - 216 ball 13 × 13 mm 0.8 mm pitch
thin fine pitch ball grid array package mechanical data.
Updated Figure 22: Power supply scheme.
Added td(TXD) values corresponding to 1.71 V < VDD < 3.6 V in Table
21-Jan-2016 8
72: Dynamics characteristics: Ethernet MAC signals for RMII.

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239
Revision history STM32F427xx STM32F429xx

Table 125. Document revision history

Date Revision Changes

Updated Figure 1: Compatible board design

STM32F10xx/STM32F2xx/STM32F4xx for LQFP100 package.
Added mission profile compliance with JEDEC JESD47 in Section 6.2:
Absolute maximum ratings.
Changed Figure 31 HSI deviation versus temperature to ACCHSI
versus temperature.
Updated RLOAD in Table 85: DAC characteristics.
Added note 2. related to the position of the 0.1 µF capacitor below
Figure 37: Recommended NRST pin protection.
18-Jul-2016 9
Updated Figure 40: SPI timing diagram - master mode.
Added reference to optional marking or inset/upset marks in all
package device marking sections. Updated Figure 85: WLCSP143
marking example (package top view), Figure 88: LQFP144 marking
example (package top view), Figure 91: LQFP176 marking (package
top view), Figure 94: LQFP208 marking example (package top view).
Updated Figure 98: UFBGA176+25 - ball 10 x 10 mm, 0.65 mm pitch
ultra thin fine pitch ball grid array package outline and Table 118:
UFBGA176+25 - ball, 10 x 10 mm, 0.65 mm pitch, ultra fine pitch ball
grid array package mechanical data.

238/240 DS9405 Rev 11

STM32F427xx STM32F429xx Revision history

Table 125. Document revision history

Date Revision Changes

Updated Arm wordmark and added Arm logo in Section 2: Description.

Updated LDC-TFT feature on cover page.
Updated Table 24: Typical and maximum current consumption in Run
mode, code with data processing running from Flash memory (ART
19-Jan-2018 10 accelerator enabled except prefetch) or RAM and Table 26: Typical and
maximum current consumption in Sleep mode.
RADC minimum value added in Table 74: ADC characteristics.
LTDC clock output frequency changed to 83 MHz in Table 107: LTDC
characteristics.
General datasheet update to include minor terminology updates.
Updated the datasheet cover page.
General update of the Section 7: Package information.
Updated the figure Figure 19: Memory map.
Edited the footnote in Table 41: HSI oscillator characteristics.
Updated the Table 22: Reset and power control block characteristics.
Updated the Section 6.2: Absolute maximum ratings.
Updated the Section : I/O system current consumption.
Updated the Section 3.36: True random number generator (RNG).
24-Oct-2024 11
Updated the Figure 36: I/O AC characteristics definition.
Updated the Figure 51: Typical connection diagram when using the
ADC with FT/TT pins featuring the analog switch function.
Updated the Section : Electromagnetic Interference (EMI).
Updated the Figure 38: SPI timing diagram - slave mode and CPHA =
0, the Figure 39: SPI timing diagram - slave mode and CPHA = 1, and
the Figure 40: SPI timing diagram - master mode.
Updated the Figure 69: NAND controller waveforms for read access
and Figure 70: NAND controller waveforms for write access.
Updated the Table 14: Voltage characteristics.

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 STM32F427xx STM32F429xx

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