R5F364A6NFA Renesas
R5F364A6NFA Renesas
R5F364A6NFA Renesas
M16C/64A Group
R01DS0032EJ0200
RENESAS MCU Rev.2.00
Feb 07, 2011
1. Overview
1.1 Features
The M16C/64A Group microcomputer (MCU) incorporates the M16C/60 Series CPU core and flash
memory, employing sophisticated instructions for a high level of efficiency. This MCU has 1 MB of address
space (expandable to 4 MB), and it is capable of executing instructions at high speed. In addition, the
CPU core boasts a multiplier for high-speed operation processing.
This MCU consumes low power, and supports operating modes that allow additional power control. The
MCU also uses an anti-noise configuration to reduce emissions of electromagnetic noise and is designed
to withstand electromagnetic interference (EMI). By integrating many of the peripheral functions, including
the multifunction timer and serial interface, the number of system components has been reduced.
1.1.1 Applications
This MCU can be used in audio components, cameras, televisions, household appliances, office
equipment, communication devices, mobile devices, industrial equipment, and other applications.
1.2 Specifications
The M16C/64A Group includes 100-pin package. Table 1.1 and Table 1.2 list specifications.
Part No. R 5 F 3 6 4 A 6 D FA
Package type
FA: Package PRQP0100JD-B (100P6F-A)
FB: Package PLQP0100KB-A (100P6Q-A)
Property code
N: Operating temperature: -20°C to 85°C
D: Operating temperature: -40°C to 85°C
Memory capacity
Program ROM 1/RAM
6: 128 KB/12 KB
E: 256 KB/20 KB
K: 384 KB/31KB
M: 512 KB/31 KB
Memory type
F: Flash memory
Renesas MCU
Renesas semiconductor
M1 6 C
R 5 F 3 6 4 A6 DF A Type No. (See Figure 1.1 “Part No., with Memory Size and Package”)
XXXXXXX
Running No. 0 to 9, A to Z (except for I, O, Q)
8 8 8 8 8 8
VCC1 ports
8 8 8 8 8
Notes:
1. ROM size depends on MCU type.
2. RAM size depends on MCU type.
See Note 3
P1_6/INT4/IDW/D14
P1_7/INT5/IDU/D15
P1_5/INT3/IDV/D13
P3_0/A8 [A8/D7]
P1_1/CLK6/D9
P1_4/D12
P3_2/A10
P3_3/A11
P3_4/A12
P3_5/A13
P3_6/A14
P3_7/A15
P4_0/A16
P4_1/A17
P4_2/A18
P4_3/A19
P3_1/A9
VCC2
VSS
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
P0_7/AN0_7/D7 81 50 P4_4/CTS7/RTS7/CS0
P0_6/AN0_6/D6 82 VCC2 ports 49 P4_5/CLK7/CS1
P0_5/AN0_5/D5 83 48 P4_6/PWM0/RXD7/SCL7/CS2
P0_4/AN0_4/D4 84 47 P4_7/PWM1/TXD7/SDA7/CS3
P0_3/AN0_3/D3 85 46 P5_0/WRL/WR
P0_2/AN0_2/D2
P0_1/AN0_1/D1
86
87
M16C/64A Group 45
44
P5_1/WRH/BHE
P5_2/RD
P0_0/AN0_0/D0 88 43 P5_3/BCLK
P10_7/AN7/KI3 89 42 P5_4/HLDA
P10_6/AN6/KI2
P10_5/AN5/KI1
90
91
PRQP0100JD-B 41
40
P5_5/HOLD
P5_6/ALE
P10_4/AN4/KI0
P10_3/AN3
92
93
(100P6F-A) 39
38
P5_7/RDY/CLKOUT
P6_0/RTCOUT/CTS0/RTS0
37 P6_1/CLK0
P10_2/AN2
P10_1/AN1
94
95 (Top view) 36 P6_2/RXD0/SCL0
AVSS 96 35 P6_3/TXD0/SDA0
P10_0/AN0 97 34 P6_4/CTS1/RTS1/CTS0/CLKS1
VREF 98 33 P6_5/CLK1
AVCC 99 VCC1 ports 32 P6_6/RXD1/SCL1
P9_7/ADTRG/SIN4 100 31 P6_7/TXD1/SDA1
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
1
2
3
4
5
6
7
8
9
P8_5/NMI/SD/CEC (1)
P7_3/CTS2/RTS2/TA1IN/V
P7_2/CLK2/TA1OUT/V
P7_1/RXD2/SCL2/SCLMM/TA0IN/TB5IN (1)
P7_0/TXD2/SDA2/SDAMM/TA0OUT (1)
P9_6/ANEX1/SOUT4
BYTE
CNVSS
VSS
XIN
P8_7/XCIN
P8_6/XCOUT
RESET
XOUT
P9_5/ANEX0/CLK4
P9_4/DA1/TB4IN/PWM1
P9_3/DA0/TB3IN/PWM0
VCC1
P8_4/INT2/ZP
P9_1/TB1IN/PMC1/SIN3
P9_0/TB0IN/CLK3
P8_3/INT1
P8_2/INT0
P8_1/TA4IN/U/CTS5/RTS5
P8_0/TA4OUT/U/RXD5/SCL5
P7_7/TA3IN/CLK5
P7_6/TA3OUT/TXD5/SDA5
P7_5/TA2IN/W
P9_2/TB2IN/PMC0/SOUT3
P7_4/TA2OUT/W
Notes:
1. N-channel open drain output.
2. Check the position of Pin 1 by referring to appendix 1, Package Dimensions.
3. Pin names in brackets [ ] represent a single functional signal.
They should not be considered as two separate functional signals.
See Note 3
P1_6/INT4/IDW/D14
P1_7/INT5/IDU/D15
P1_5/INT3/IDV/D13
P3_0/A8 [A8/D7]
P1_4/D12
P3_2/A10
P3_3/A11
P3_4/A12
P3_5/A13
P3_6/A14
P3_7/A15
P4_0/A16
P4_1/A17
P3_1/A9
VCC2
VSS
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
P1_2/RXD6/SCL6/D10 76 50 P4_2/A18
P1_1/CLK6/D9 77 49 P4_3/A19
P1_0/CTS6/RTS6/D8 78 VCC2 ports 48 P4_4/CTS7/RTS7/CS0
P0_7/AN0_7/D7 79 47 P4_5/CLK7/CS1
P0_6/AN0_6/D6 80 46 P4_6/PWM0/RXD7/SCL7/CS2
P0_5/AN0_5/D5 81 45 P4_7/PWM1/TXD7/SDA7/CS3
P0_4/AN0_4/D4 82 44 P5_0/WRL/WR
P0_3/AN0_3/D3 83 43 P5_1/WRH/BHE
P0_2/AN0_2/D2
P0_1/AN0_1/D1
84
85
M16C/64A Group 42
41
P5_2/RD
P5_3/BCLK
P0_0/AN0_0/D0 86 40 P5_4/HLDA
P10_7/AN7/KI3 87 39 P5_5/HOLD
P10_6/AN6/KI2
P10_5/AN5/KI1
88
89
PLQP0100KB-A 38
37
P5_6/ALE
P5_7/RDY/CLKOUT
P10_4/AN4/KI0
P10_3/AN3
90
91
(100P6Q-A) 36
35
P6_0/RTCOUT/CTS0/RTS0
P6_1/CLK0
P10_2/AN2
P10_1/AN1
92
93
(Top view) 34
33
P6_2/RXD0/SCL0
P6_3/TXD0/SDA0
AVSS 94 32 P6_4/CTS1/RTS1/CTS0/CLKS1
P10_0/AN0 95 31 P6_5/CLK1
VREF 96 30 P6_6/RXD1/SCL1
AVCC 97 29 P6_7/TXD1/SDA1
P9_7/ADTRG/SIN4 98 VCC1 ports 28 P7_0/TXD2/SDA2/SDAMM/TA0OUT (1)
P9_6/ANEX1/SOUT4 99 27 P7_1/RXD2/SCL2/SCLMM/TA0IN/TB5IN (1)
P9_5/ANEX0/CLK4 100 26 P7_2/CLK2/TA1OUT/V
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
1
2
3
4
5
6
7
8
9
P9_4/DA1/TB4IN/PWM1
P9_3/DA0/TB3IN/PWM0
P9_1/TB1IN/PMC1/SIN3
P8_3/INT1
P8_2/INT0
P7_6/TA3OUT/TXD5/SDA5
P9_0/TB0IN/CLK3
VCC1
P9_2/TB2IN/PMC0/SOUT3
P8_1/TA4IN/U/CTS5/RTS5
P8_0/TA4OUT/U/RXD5/SCL5
P7_7/TA3IN/CLK5
BYTE
CNVSS
P8_7/XCIN
P7_3/CTS2/RTS2/TA1IN/V
VSS
XIN
P8_5/NMI/SD/CEC (1)
P8_4/INT2/ZP
P7_5/TA2IN/W
P8_6/XCOUT
RESET
P7_4/TA2OUT/W
XOUT
Notes:
1. N-channel open drain output.
2. Check the position of Pin 1 by referring to appendix 1, Package Dimensions.
3. Pin names in brackets [ ] represent a single functional signal.
They should not be considered as two separate functional signals.
Main clock input XIN I VCC1 I/O for the main clock oscillator. Connect a ceramic resonator
or crystal between pins XIN and XOUT. (1) Input an external
Main clock output XOUT O VCC1 clock to XIN pin and leave XOUT pin open.
Sub clock input XCIN I VCC1 I/O for a sub clock oscillator. Connect a crystal between XCIN
pin and XCOUT pin. (1) Input an external clock to XCIN pin and
Sub clock output XCOUT O VCC1 leave XCOUT pin open.
b31 b15 b8 b7 b0
R2 R0H (upper bits of R0) R0L (lower bits of R0)
b19 b15 b0
INTBH INTBL Interrupt table register
b15 b0
FLG Flag register
b15 b8 b7 b0
IPL U I O B S Z D C
Carry flag
Debug flag
Zero flag
Sign flag
Register bank select flag
Overflow flag
Interrupt enable flag
Stack pointer select flag
Reserved area
Processor interrupt priority level
Reserved area
Note:
1. These registers compose a register bank. There are two register banks.
2.6 User Stack Pointer (USP) and Interrupt Stack Pointer (ISP)
The USP and ISP stack pointers (SP) are each comprised of 16 bits. The U flag is used to switch between
USP and ISP.
3. Address Space
BFFFFh 512 KB × 8
D0000h
Reserved area
Notes:
1. Do not access reserved areas.
2. The figure above applies under the following condition:
- The PM13 bit in the PM1 register is 0
(addresses 04000h to 0CFFFh and 80000h to CFFFFh are used as external areas)
00000h SFR
Internal RAM 00400h
Internal RAM
Size Address XXXXXh XXXXXh
Notes:
1. Do not access reserved areas.
2. The figure above applies under the following conditions:
- Memory expansion mode
- The PM10 bit in the PM1 register is 1
(addresses 0E000h to 0FFFFh are used as data flash)
- The PRG2C0 bit in the PRG2C register is 0 (program ROM 2 enabled)
- The PM13 bit in the PM1 register is 1
(all areas in internal RAM, and the program ROM 1 area from 80000h are usable)
3. Do not change the data from FFh.
External area
Reserved area
80000h
4.1 SFRs
An SFR is a control register for a peripheral function.
5. Electrical Characteristics
Note:
1. Maximum value is 6.5 V.
Note:
1. The device is operationally guaranteed under these operating conditions.
VCC1
Vr( VCC1)
AN Analog input
Notes:
1. Use when AVCC = VCC1.
2. When VCC1 ≥ VCC2, set as below:
Analog input voltage (AN0 to AN7, ANEX0, and ANEX1) ≤ VCC1
Analog input voltage (AN0_0 to AN0_7 and AN2_0 to AN2_7) ≤ VCC2.
3. When analog input voltage is over reference voltage, the result of A/D conversion is 3FFh.
4. Flash memory rewrite disabled. Except for the analog input pin, set the pins to be measured as input ports and
connect them to VSS. See Figure 5.2 “A/D Accuracy Measure Circuit”.
Vpor1
tw(por) Voltage detection 0
circuit response time
Internal
reset signal
1 1
× 32 × 32
fOCO-S fOCO-S
Note:
1. Vdet0 indicates the voltage detection level of the voltage detection 0 circuit.
Note:
1. Waiting time until the internal power supply generator stabilizes when power is on.
td(P-R) Recommended
operation voltage
Internal power supply stability
time when power is on
VCC1
td(P-R)
CPU clock
td(E-A)
Voltage detector VC25, VC26, VC27
operation start time
td(E-A)
VCC1 = VCC2 = 5 V
Table 5.18 Electrical Characteristics (2) (1)
VCC1 = VCC2 = 4.2 to 5.5 V, VSS = 0 V at Topr = −20°C to 85°C/−40°C to 85°C, f(BCLK) = 25 MHz unless otherwise specified.
Measuring Standard
Symbol Parameter Unit
Condition Min. Typ. Max.
VT+ - VT- Hysteresis HOLD, RDY, TA0IN to TA4IN, TB0IN to TB5IN, 0.5 2.0 V
INT0 to INT7, NMI, ADTRG, CTS0 to CTS2,
CTS5 to CTS7, SCL0 to SCL2, SCL5 to SCL7,
SDA0 to SDA2, SDA5 to SDA7, CLK0 to CLK7,
TA0OUT to TA4OUT,
KI0 to KI3, RXD0 to RXD2, RXD5 to RXD7,
SIN3, SIN4, SD, PMC0, PMC1, SCLMM,
SDAMM, CEC, ZP, IDU, IDV, IDW
VT+ - VT- Hysteresis RESET 0.5 2.5 V
IIH High input P0_0 to P0_7, P1_0 to P1_7, P2_0 to P2_7, VI = 5 V 5.0 μA
current P3_0 to P3_7, P4_0 to P4_7, P5_0 to P5_7,
P6_0 to P6_7, P7_0 to P7_7, P8_0 to P8_7,
P9_0 to P9_7, P10_0 to P10_7
XIN, RESET, CNVSS, BYTE
IIL Low input P0_0 to P0_7, P1_0 to P1_7, P2_0 to P2_7, VI = 0 V −5.0 μA
current P3_0 to P3_7, P4_0 to P4_7, P5_0 to P5_7,
P6_0 to P6_7, P7_0 to P7_7, P8_0 to P8_7,
P9_0 to P9_7, P10_0 to P10_7
XIN, RESET, CNVSS, BYTE
RPULLUP Pull-up P0_0 to P0_7, P1_0 to P1_7, P2_0 to P2_7, VI = 0 V 30 50 100 kΩ
resistance P3_0 to P3_7, P4_0 to P4_7, P5_0 to P5_7,
P6_0 to P6_7, P7_2 to P7_7, P8_0 to P8_4,
P8_6, P8_7, P9_0 to P9_7, P10_0 to P10_7
RfXIN Feedback resistance XIN 1.5 MΩ
RfXCIN Feedback resistance XCIN 8 MΩ
VRAM RAM retention voltage In stop mode 1.8 V
Note:
1. When VCC1 ≠ VCC2, refer to 5 V or 3 V standard depending on the voltage.
VCC1 = VCC2 = 5 V
Table 5.19 Electrical Characteristics (3)
R5F364A6NFA, R5F364A6NFB, R5F364A6DFA, R5F364A6DFB,
R5F364AENFA, R5F364AENFB, R5F364AEDFA, R5F364AEDFB
VCC1 = VCC2 = 4.2 to 5.5 V, VSS = 0 V at Topr = −20°C to 85°C/−40°C to 85°C, f(BCLK) = 25 MHz unless otherwise specified.
Standard
Symbol Parameter Measuring Condition Unit
Min. Typ. Max.
ICC Power supply current High-speed mode f(BCLK) = 25 MHz
XIN = 4.2 MHz (square wave), PLL multiplied by 6 20.0 mA
In single-chip, mode, 125 kHz on-chip oscillator stopped
the output pin are f(BCLK) =25 MHz, A/D conversion
open and other pins XIN = 4.2 MHz (square wave), PLL multiplied by 6 20.7 mA
are VSS 125 kHz on-chip oscillator stopped
f(BCLK) = 20 MHz
XIN = 20 MHz (square wave) 16.0 mA
125 kHz on-chip oscillator stopped
125 kHz on-chip Main clock stopped
oscillator mode 125 kHz on-chip oscillator on, no division 500.0 μA
FMR22 = 1 (slow read mode)
Low-power mode f(BCLK) = 32 kHz
In low-power mode
160.0 μA
FMR22 = FMR23 = 1
On flash memory (1)
f(BCLK) = 32 kHz
In low-power mode 45.0 μA
On RAM (1)
Wait mode Main clock stopped
125 kHz on-chip oscillator on
20.0 μA
Peripheral clock operating
Topr = 25°C
f(BCLK) = 32 kHz (oscillation capacity High)
125 kHz on-chip oscillator stopped
11.0 μA
Peripheral clock operating
Topr = 25°C
f(BCLK) = 32 kHz (oscillation capacity Low)
125 kHz on-chip oscillator stopped
6.0 μA
Peripheral clock operating
Topr = 25°C
Stop mode Main clock stopped
125 kHz on-chip oscillator stopped
1.7 μA
Peripheral clock stopped
Topr = 25°C
During flash f(BCLK) = 10 MHz, PM17 = 1 (one wait)
memory program VCC1 = 5.0 V 20.0 mA
VCC1 = VCC2 = 5 V
Table 5.20 Electrical Characteristics (4)
R5F364AKNFA, R5F364AKNFB, R5F364AKDFA, R5F364AKDFB
R5F364AMNFA, R5F364AMNFB, R5F364AMDFA, R5F364AMDFB
VCC1 = VCC2 = 4.2 to 5.5 V, VSS = 0 V at Topr = −20°C to 85°C/−40°C to 85°C, f(BCLK) = 25 MHz unless otherwise specified.
Standard
Symbol Parameter Measuring Condition Unit
Min. Typ. Max.
ICC Power supply current High-speed mode f(BCLK) = 25 MHz
XIN = 4.2 MHz (square wave), PLL multiplied by 6 22.0 mA
In single-chip, mode, 125 kHz on-chip oscillator stopped
the output pin are f(BCLK) = 25 MHz, A/D conversion
open and other pins XIN = 4.2 MHz (square wave), PLL multiplied by 6 22.7 mA
are VSS 125 kHz on-chip oscillator stopped
f(BCLK) = 20 MHz
XIN = 20 MHz (square wave) 17.0 mA
125 kHz on-chip oscillator stopped
125 kHz on-chip Main clock stopped
oscillator mode 125 kHz on-chip oscillator on, no division 550.0 μA
FMR22 = 1 (slow read mode)
Low-power mode f(BCLK) = 32 kHz
In low-power mode
170.0 μA
FMR22 = FMR23 = 1
on flash memory (1)
f(BCLK) = 32 kHz
In low-power mode 45.0 μA
on RAM (1)
Wait mode Main clock stopped
125 kHz on-chip oscillator on
20.5 μA
Peripheral clock operating
Topr = 25°C
f(BCLK) = 32 kHz (oscillation capacity High)
125 kHz on-chip oscillator stopped
11.0 μA
Peripheral clock operating
Topr = 25°C
f(BCLK) = 32 kHz (oscillation capacity low)
125 kHz on-chip oscillator stopped
6.0 μA
Peripheral clock operating
Topr = 25°C
Stop mode Main clock stopped
125 kHz on-chip oscillator stopped
1.7 μA
Peripheral clock stopped
Topr = 25°C
During flash memory f(BCLK) = 10 MHz, PM17 = 1 (one wait)
program 20.0 mA
VCC1 = 5.0 V
During flash memory f(BCLK) = 10 MHz, PM17 = 1 (one wait)
erase 30.0 mA
VCC1 = 5.0 V
Note:
1. This indicates the memory in which the program to be executed exists.
VCC1 = VCC2 = 5 V
RESET input
t w(RTSL)
Note:
1. The condition is VCC1 = VCC2 = 3.0 to 5.0 V.
XIN input
tf
tr t w(H) t w(L)
tc
VCC1 = VCC2 = 5V
Timing Requirements
(VCC1 = VCC2 = 5 V, VSS = 0 V, at Topr = -20°C to 85°C/-40°C to 85°C unless otherwise specified)
Table 5.25 Timer A Input (External Trigger Input in One-Shot Timer Mode)
Standard
Symbol Parameter Unit
Min. Max.
tc(TA) TAiIN input cycle time 200 ns
tw(TAH) TAiIN input high pulse width 100 ns
tw(TAL) TAiIN input low pulse width 100 ns
Table 5.26 Timer A Input (External Trigger Input in Pulse Width Modulation Mode and
Programmable Output Mode)
Standard
Symbol Parameter Unit
Min. Max.
tw(TAH) TAiIN input high pulse width 100 ns
tw(TAL) TAiIN input low pulse width 100 ns
tc(TA)
t w(TAH)
TAiIN input
t w(TAL)
tc(UP)
t w(UPH)
TAiOUT input
t w(UPL)
VCC1 = VCC2 = 5V
Timing Requirements
(VCC1 = VCC2 = 5 V, VSS = 0 V, at Topr = -20°C to 85°C/-40°C to 85°C unless otherwise specified)
Table 5.27 Timer A Input (Two-Phase Pulse Input in Event Counter Mode)
Standard
Symbol Parameter Unit
Min. Max.
tc(TA) TAiIN input cycle time 800 ns
tsu(TAIN-TAOUT) TAiOUT input setup time 200 ns
tsu(TAOUT-TAIN) TAiIN input setup time 200 ns
TAiIN input
tsu(TAIN-TAOUT) tsu(TAIN-TAOUT)
tsu(TAOUT-TAIN)
TAiOUT input
tsu(TAOUT-TAIN)
Figure 5.8 Timer A Input (Two-Phase Pulse Input in Event Counter Mode)
VCC1 = VCC2 = 5V
Timing Requirements
(VCC1 = VCC2 = 5 V, VSS = 0 V, at Topr = -20°C to 85°C/-40°C to 85°C unless otherwise specified)
tc(TB)
t w(TBH)
TBiIN input
t w(TBL)
VCC1 = VCC2 = 5V
Timing Requirements
(VCC1 = VCC2 = 5 V, VSS = 0 V, at Topr = -20°C to 85°C/-40°C to 85°C unless otherwise specified)
tc(CK)
t w(CKH)
CLKi
t w(CKL)
th(C-Q)
TXDi
td(C-Q) tsu(D-C)
th(C-D)
RXDi
t w(INL)
INTi input
t w(INH)
VCC1 = VCC2 = 5V
Timing Requirements
(VCC1 = VCC2 = 5 V, VSS = 0 V, at Topr = -20°C to 85°C/-40°C to 85°C unless otherwise specified)
SDA
VCC1 = VCC2 = 5V
Timing Requirements
(VCC1 = VCC2 = 5 V, VSS = 0 V, at Topr = -20°C to 85°C/-40°C to 85°C unless otherwise specified)
VCC1 = VCC2 = 5 V
Memory Expansion Mode and Microprocessor Mode
BCLK
RD
(Separate bus)
RD
(Multiplexed bus)
RDY input
tsu(RDY-BCLK) th(BCLK-RDY)
Measuring conditions
y VCC1 = VCC2 = 5 V
y Input timing voltage: VIL = 1.0 V, VIH = 4.0 V
y Output timing voltage: VOL = 2.5 V, VOH = 2.5 V
VCC1 = VCC2 = 5 V
Table 5.35 Memory Expansion Mode and Microprocessor Mode (in No Wait State Setting)
Measuring Standard
Symbol Parameter Unit
Condition Min. Max.
td(BCLK-AD) Address output delay time 25 ns
th(BCLK-AD) Address output hold time (in relation to BCLK) 0 ns
th(RD-AD) Address output hold time (in relation to RD) 0 ns
th(WR-AD) Address output hold time (in relation to WR) (Note 2) ns
td(BCLK-CS) Chip select output delay time 25 ns
th(BCLK-CS) Chip select output hold time (in relation to BCLK) 0 ns
td(BCLK-ALE) ALE signal output delay time 15 ns
th(BCLK-ALE) ALE signal output hold time See −4 ns
td(BCLK-RD) RD signal output delay time Figure 5.14 25 ns
th(BCLK-RD) RD signal output hold time 0 ns
td(BCLK-WR) WR signal output delay time 25 ns
th(BCLK-WR) WR signal output hold time 0 ns
td(BCLK-DB) Data output delay time (in relation to BCLK) 40 ns
th(BCLK-DB) Data output hold time (in relation to BCLK) (3) 0 ns
td(DB-WR) Data output delay time (in relation to WR) (Note 1) ns
th(WR-DB) Data output hold time (in relation to WR) (3) (Note 2) ns
Notes:
1. Calculated according to the BCLK frequency as follows:
9
0.5 × 10 - – 40 [ ns ] f
--------------------- (BCLK) is 12.5 MHz or less.
f ( BCLK )
2. Calculated according to the BCLK frequency as follows:
9
0.5 × 10 - – 10 [ ns ]
---------------------
f ( BCLK )
3. This standard value shows the timing when the output is off, and does not
show hold time of data bus.
Hold time of data bus varies with capacitor volume and pull-up (pull-down)
resistance value. R
Hold time of data bus is expressed in
t = −CR × ln(1−VOL/VCC2) DBi
by a circuit of the right figure. C
For example, when VOL = 0.2VCC2, C = 30 pF, R = 1 kΩ, hold time of output
low level is
t = −30 pF × 1 kΩ × In(1 − 0.2VCC2/VCC2)
= 6.7 ns.
P0
P1
P2
P3 30 pF
P4
P5
P6
P7
P8
P9
P10
Read timing
BCLK
td(BCLK-CS) th(BCLK-CS)
25ns(max.) 0ns(min.)
CSi
tcyc
td(BCLK-AD) th(BCLK-AD)
25ns(max.) 0ns(min.)
ADi
BHE
td(BCLK-ALE) th(BCLK-ALE) th(RD-AD)
15ns(max.) -4ns(min.) 0ns(min.)
ALE
td(BCLK-RD) th(BCLK-RD)
25ns(max.) 0ns(min.)
RD
tac1(RD-DB)
(0.5 × t cyc - 45)ns(max.)
Hi-Z
DBi
tsu(DB-RD) th(RD-DB)
40ns(min.) 0ns(min.)
Write timing
BCLK
td(BCLK-CS) th(BCLK-CS)
25ns(max.)
0ns(min.)
CSi
tcyc
td(BCLK-AD) th(BCLK-AD)
25ns(max.) 0ns(min.)
ADi
BHE
td(BCLK-ALE) th(BCLK-ALE)
15ns(max.) -4ns(min.) th(WR-AD)
(0.5 × t cyc - 10)ns(min.)
ALE
td(BCLK-WR) th(BCLK-WR)
25ns(max.) 0ns(min.)
WR, WRL,
WRH
td(BCLK-DB) th(BCLK-DB)
40ns(max.) 0ns(min.)
Hi-Z
DBi
td(DB-WR) th(WR-DB)
(0.5 × t cyc - 40)ns(min.) (0.5 × t cyc - 10)ns(min.)
tcyc = 1
f(BCLK)
Measuring conditions
y VCC1 = VCC2 = 5V
y Input timing voltage: VIL = 0.8 V, VIH = 2.0 V
y Output timing voltage: VOL = 0.4 V, VOH = 2.4 V
VCC1 = VCC2 = 5V
Switching Characteristics
(VCC1 = VCC2 = 5 V, VSS = 0 V, at Topr = -20°C to 85°C/-40°C to 85°C unless otherwise specified)
Table 5.36 Memory Expansion Mode and Microprocessor Mode (in 1 to 3 Waits Setting and When
Accessing External Area)
Measuring Standard
Symbol Parameter Unit
Condition Min. Max.
td(BCLK-AD) Address output delay time 25 ns
th(BCLK-AD) Address output hold time (in relation to BCLK) 0 ns
th(RD-AD) Address output hold time (in relation to RD) 0 ns
th(WR-AD) Address output hold time (in relation to WR) (Note 2) ns
td(BCLK-CS) Chip select output delay time 25 ns
th(BCLK-CS) Chip select output hold time (in relation to BCLK) 0 ns
td(BCLK-ALE) ALE signal output delay time 15 ns
th(BCLK-ALE) ALE signal output hold time See -4 ns
td(BCLK-RD) RD signal output delay time Figure 5.14 25 ns
th(BCLK-RD) RD signal output hold time 0 ns
td(BCLK-WR) WR signal output delay time 25 ns
th(BCLK-WR) WR signal output hold time 0 ns
td(BCLK-DB) Data output delay time (in relation to BCLK) 40 ns
th(BCLK-DB) Data output hold time (in relation to BCLK) (3) 0 ns
td(DB-WR) Data output delay time (in relation to WR) (Note 1) ns
th(WR-DB) Data output hold time (in relation to WR)(3) (Note 2) ns
Notes:
1. Calculated according to the BCLK frequency as follows:
9
(-----------------------------------
n – 0.5 ) × 10 - – 40 [ ns ] n is 1 for 1 wait setting, 2 for 2 waits setting and 3 for 3 waits setting.
f ( BCLK ) When n = 1, f(BCLK) is 12.5 MHz or less.
Read timing
BCLK
td(BCLK-CS) th(BCLK-CS)
25ns(max.) 0ns(min.)
CSi
tcyc
td(BCLK-AD) th(BCLK-AD)
25ns(max.) 0ns(min.)
ADi
BHE
td(BCLK-ALE) th(BCLK-ALE) th(RD-AD)
15ns(max.) -4ns(min.) 0ns(min.)
ALE
td(BCLK-RD) th(BCLK-RD)
25ns(max.) 0ns(min.)
RD
tac2(RD-DB)
{(n+0.5) × tcyc -45}ns(max.)
Hi-Z
DBi
th(RD-DB)
tsu(DB-RD) 0ns(min.)
40ns(min.)
Write timing
BCLK
td(BCLK-CS) th(BCLK-CS)
25ns(max.) 0ns(min.)
CSi
tcyc
td(BCLK-AD) th(BCLK-AD)
25ns(max.) 0ns(min.)
ADi
BHE
td(BCLK-ALE) th(BCLK-ALE)
15ns(max.) -4ns(min.) th(WR-AD)
(0.5 × t cyc-10)ns(min.)
ALE
td(BCLK-WR) th(BCLK-WR)
25ns(max.) 0ns(min.)
WR, WRL,
WRH
td(BCLK-DB)
40ns(max.) th(BCLK-DB)
0ns(min.)
Hi-Z
DBi
td(DB-WR) th(WR-DB)
{(n-0.5) × tcyc -40}ns(min.) (0.5 × t cyc-10)ns(min.)
1
tcyc =
f(BCLK)
VCC1 = VCC2 = 5V
Switching Characteristics
(VCC1 = VCC2 = 5 V, VSS = 0 V, at Topr = -20°C to 85°C/-40°C to 85°C unless otherwise specified)
5.2.4.3 In 2 or 3 Waits Setting, and When Accessing External Area and Using
Multiplexed Bus
Table 5.37 Memory Expansion Mode and Microprocessor Mode (in 2 or 3 Waits Setting, and When
Accessing External Area and Using Multiplexed Bus) (5)
Measuring Standard
Symbol Parameter Unit
Condition Min. Max.
td(BCLK-AD) Address output delay time 25 ns
th(BCLK-AD) Address output hold time (in relation to BCLK) 0 ns
th(RD-AD) Address output hold time (in relation to RD) (Note 1) ns
th(WR-AD) Address output hold time (in relation to WR) (Note 1) ns
td(BCLK-CS) Chip select output delay time 25 ns
th(BCLK-CS) Chip select output hold time (in relation to BCLK) 0 ns
th(RD-CS) Chip select output hold time (in relation to RD) (Note 1) ns
th(WR-CS) Chip select output hold time (in relation to WR) (Note 1) ns
td(BCLK-RD) RD signal output delay time 25 ns
th(BCLK-RD) RD signal output hold time 0 ns
td(BCLK-WR) WR signal output delay time 25 ns
See
th(BCLK-WR) WR signal output hold time 0 ns
Figure 5.14
td(BCLK-DB) Data output delay time (in relation to BCLK) 40 ns
th(BCLK-DB) Data output hold time (in relation to BCLK) 0 ns
td(DB-WR) Data output delay time (in relation to WR) (Note 2) ns
th(WR-DB) Data output hold time (in relation to WR) (Note 1) ns
td(BCLK-ALE) ALE signal output delay time (in relation to BCLK) 15 ns
th(BCLK-ALE) ALE signal output hold time (in relation to BCLK) −4 ns
td(AD-ALE) ALE signal output delay time (in relation to Address) (Note 3) ns
th(AD-ALE) ALE signal output hold time (in relation to Address) (Note 4) ns
td(AD-RD) RD signal output delay from the end of address 0 ns
td(AD-WR) WR signal output delay from the end of address 0 ns
tdz(RD-AD) Address output floating start time 8 ns
Notes:
1. Calculated according to the BCLK frequency as follows:
9
0.5 × 10 - – 10 [ ns ]
---------------------
f ( BCLK )
2. Calculated according to the BCLK frequency as follows:
9
( n – 0.5 ) × 10 - – 40 [ ns ] n is 2 for 2-wait setting, 3 for 3-wait setting.
-----------------------------------
f ( BCLK )
3. Calculated according to the BCLK frequency as follows:
9
0.5 × 10 - – 25 [ ns ]
---------------------
f ( BCLK )
4. Calculated according to the BCLK frequency as follows:
9
0.5 × 10 - – 15 [ ns ]
---------------------
f ( BCLK )
5. When using multiplex bus, set f(BCLK) 12.5 MHz or less.
Read timing
BCLK th(BCLK-CS)
td(BCLK-CS) th(RD-CS) 0ns(min.)
25ns(max.) tcyc
(0.5 × t cyc-10)ns(min.)
CSi
td(AD-ALE) th(ALE-AD)
(0.5 × t cyc-25ns(min.) (0.5 × t cyc-15ns(min.)
td(AD-RD)
td(BCLK-AD) 0ns(min.)
25ns(max.) th(BCLK-AD)
0ns(min.)
ADi
BHE
td(BCLK-ALE) th(BCLK-ALE)
15ns(max.) th(RD-AD)
-4ns(min.)
(0.5 × t cyc-10)ns(min.)
ALE
td(BCLK-RD) th(BCLK-RD)
25ns(max.) 0ns(min.)
RD
Write timing
BCLK
td(BCLK-CS) tcyc th(BCLK-CS)
25ns(max.) th(WR-CS) 0ns(min.)
(0.5 × t cyc-10)ns(min.)
CSi
td(BCLK-DB) th(BCLK-DB)
40ns(max.) 0ns(min.)
ADi Address Data output Address
/DBi
td(AD-ALE) td(DB-WR) th(WR-DB)
(0.5 × t cyc-25ns(min.) {(n-0.5) × tcyc -40}ns(min.) (0.5 × t cyc-10)ns(min.)
td(BCLK-AD) th(BCLK-AD)
25ns(max.) 0ns(min.)
ADi
BHE
td(BCLK-ALE) th(BCLK-ALE) td(AD-WR)
15ns(max.) -4ns(min.) 0ns(min.)
th(WR-AD)
(0.5 × t cyc-10)ns(min.)
ALE
td(BCLK-WR) th(BCLK-WR)
25ns(max.) 0ns(min.)
WR, WRL,
WRH
Note:
1. When VCC1 ≠ VCC2, refer to 5 V or 3 V standard depending on the voltage.
VCC1 = VCC2 = 3 V
Table 5.39 Electrical Characteristics (2)
R5F364A6NFA, R5F364A6NFB, R5F364A6DFA, R5F364A6DFB,
R5F364AENFA, R5F364AENFB, R5F364AEDFA, R5F364AEDFB
VCC1 = VCC2 = 2.7 to 3.3 V, VSS = 0 V at Topr = −20°C to 85°C/−40°C to 85°C, f(BCLK) = 25 MHz unless otherwise specified.
Standard
Symbol Parameter Measuring Condition Unit
Min. Typ. Max.
ICC Power supply current High-speed mode f(BCLK) = 25 MHz
XIN = 4.2 MHz (square wave), PLL multiplied by 6 20.0 mA
In single-chip, mode, 125 kHz on-chip oscillator stopped
the output pin are f(BCLK) = 25 MHz, A/D conversion
open and other pins XIN = 4.2 MHz (square wave), PLL multiplied by 6 20.7 mA
are VSS 125 kHz on-chip oscillator stopped
f(BCLK) = 20 MHz
XIN = 20 MHz (square wave) 16.0 mA
125 kHz on-chip oscillator stopped
125 kHz on-chip Main clock stopped
oscillator mode 125 kHz on-chip oscillator on, no division 450.0 μA
FMR22 = 1 (slow read mode)
Low-power mode f(BCLK) = 32 MHz
In low-power mode
160.0 μA
FMR 22 = FMR23 = 1
On flash memory (1)
f(BCLK) = 32 MHz
In low-power mode 40.0 μA
On RAM (1)
Wait mode Main clock stopped
125 kHz on-chip oscillator on
20.0 μA
Peripheral clock operating
Topr = 25°C
f(BCLK) = 32 MHz (oscillation capacity High)
125 kHz on-chip oscillator stopped
8.0 μA
Peripheral clock operating
Topr = 25°C
f(BCLK) = 32 kHz (oscillation capacity Low)
125 kHz on-chip oscillator stopped
4.0 μA
Peripheral clock operating
Topr = 25°C
Stop mode Main clock stopped
125 kHz on-chip oscillator stopped
1.6 μA
Peripheral clock stopped
Topr = 25°C
During flash f(BCLK) = 10 MHz, PM17 = 1 (one wait)
memory program 20.0 mA
VCC1 = 3.0 V
During flash f(BCLK) = 10 MHz, PM17 = 1 (one wait)
memory erase 30.0 mA
VCC1 = 3.0 V
Note:
1. This indicates the memory in which the program to be executed exists.
VCC1 = VCC2 = 3 V
Table 5.40 Electrical Characteristics (3)
R5F364AKNFA, R5F364AKNFB, R5F364AKDFA, R5F364AKDFB
R5F364AMNFA, R5F364AMNFB, R5F364AMDFA, R5F364AMDFB
VCC1 = VCC2 = 2.7 to 3.3 V, VSS = 0 V at Topr = −20°C to 85°C/−40°C to 85°C, f(BCLK) = 25 MHz unless otherwise specified.
Standard
Symbol Parameter Measuring Condition Unit
Min. Typ. Max.
ICC Power supply current High-speed mode f(BCLK) = 25 MHz
XIN = 4.2 MHz (square wave),
In single-chip, mode, PLL multiplied by 6
the output pin are 125 kHz on-chip oscillator stopped 22.0 mA
open and other pins
are VSS
Note:
1. This indicates the memory in which the program to be executed exists.
VCC1 = VCC2 = 3 V
RESET input
t w(RTSL)
Note:
1. The condition is VCC1 = VCC2 = 2.7 to 3.0 V.
XIN input
tf
tr t w(H) t w(L)
tc
VCC1 = VCC2 = 3V
Timing Requirements
(VCC1 = VCC2 = 3 V, VSS = 0 V, at Topr = -20°C to 85°C/-40°C to 85°C unless otherwise specified)
Table 5.45 Timer A Input (External Trigger Input in One-Shot Timer Mode)
Standard
Symbol Parameter Unit
Min. Max.
tc(TA) TAiIN input cycle time 300 ns
tw(TAH) TAiIN input high pulse width 150 ns
tw(TAL) TAiIN input low pulse width 150 ns
Table 5.46 Timer A Input (External Trigger Input in Pulse Width Modulation Mode and
Programmable Output Mode)
Standard
Symbol Parameter Unit
Min. Max.
tw(TAH) TAiIN input high pulse width 150 ns
tw(TAL) TAiIN input low pulse width 150 ns
tc(TA)
t w(TAH)
TAiIN input
t w(TAL)
tc(UP)
t w(UPH)
TAiOUT input
t w(UPL)
VCC1 = VCC2 = 3V
Timing Requirements
(VCC1 = VCC2 = 3 V, VSS = 0 V, at Topr = -20°C to 85°C/-40°C to 85°C unless otherwise specified)
Table 5.47 Timer A Input (Two-Phase Pulse Input in Event Counter Mode)
Standard
Symbol Parameter Unit
Min. Max.
tc(TA) TAiIN input cycle time 2 μs
tsu(TAIN-TAOUT) TAiOUT input setup time 500 ns
tsu(TAOUT-TAIN) TAiIN input setup time 500 ns
TAiIN input
tsu(TAIN-TAOUT) tsu(TAIN-TAOUT)
tsu(TAOUT-TAIN)
TAiOUT input
tsu(TAOUT-TAIN)
Figure 5.21 Timer A Input (Two-Phase Pulse Input in Event Counter Mode)
VCC1 = VCC2 = 3V
Timing Requirements
(VCC1 = VCC2 = 3 V, VSS = 0 V, at Topr = -20°C to 85°C/-40°C to 85°C unless otherwise specified)
tc(TB)
t w(TBH)
TBiIN input
t w(TBL)
VCC1 = VCC2 = 3V
Timing Requirements
(VCC1 = VCC2 = 3 V, VSS = 0 V, at Topr = -20°C to 85°C/-40°C to 85°C unless otherwise specified)
tc(CK)
t w(CKH)
CLKi
t w(CKL)
th(C-Q)
TXDi
td(C-Q) tsu(D-C)
th(C-D)
RXDi
t w(INL)
INTi input
t w(INH)
VCC1 = VCC2 = 3V
Timing Requirements
(VCC1 = VCC2 = 3 V, VSS = 0 V, at Topr = -20°C to 85°C/-40°C to 85°C unless otherwise specified)
SDA
VCC1 = VCC2 = 3V
Timing Requirements
(VCC1 = VCC2 = 3 V, VSS = 0 V, at Topr = -20°C to 85°C/-40°C to 85°C unless otherwise specified)
VCC1 = VCC2 = 3 V
Memory Expansion Mode and Microprocessor Mode
BCLK
RD
(Separate bus)
RD
(Multiplexed bus)
RDY input
tsu(RDY-BCLK) th(BCLK-RDY)
Measuring conditions
y VCC1 = VCC2 = 3 V
y Input timing voltage: VIL = 0.6 V, VIH = 2.4 V
y Output timing voltage: VOL = 1.5 V, VOH = 1.5 V
VCC1 = VCC2 = 3 V
Table 5.55 Memory Expansion and Microprocessor Modes (in No Wait State Setting)
Measuring Standard
Symbol Parameter Unit
Condition Min. Max.
td(BCLK-AD) Address output delay time 30 ns
th(BCLK-AD) Address output hold time (in relation to BCLK) 0 ns
th(RD-AD) Address output hold time (in relation to RD) 0 ns
th(WR-AD) Address output hold time (in relation to WR) (Note 2) ns
td(BCLK-CS) Chip select output delay time 30 ns
th(BCLK-CS) Chip select output hold time (in relation to BCLK) 0 ns
td(BCLK-ALE) ALE signal output delay time 25 ns
th(BCLK-ALE) ALE signal output hold time See −4 ns
td(BCLK-RD) RD signal output delay time Figure 5.27 30 ns
th(BCLK-RD) RD signal output hold time 0 ns
td(BCLK-WR) WR signal output delay time 30 ns
th(BCLK-WR) WR signal output hold time 0 ns
td(BCLK-DB) Data output delay time (in relation to BCLK) 40 ns
th(BCLK-DB) Data output hold time (in relation to BCLK) (3) 0 ns
td(DB-WR) Data output delay time (in relation to WR) (Note 1) ns
th(WR-DB) Data output hold time (in relation to WR) (3) (Note 2) ns
Notes:
1. Calculated according to the BCLK frequency as follows:
9
0.5 × 10 - – 40 [ ns ] f(BCLK) is 12.5 MHz or less.
---------------------
f ( BCLK )
2. Calculated according to the BCLK frequency as follows:
9
0.5 × 10 - – 10 [ ns ]
---------------------
f ( BCLK )
3. This standard value shows the timing when the output is off, and
does not show hold time of data bus.
Hold time of data bus varies with capacitor volume and pull-up
(pull-down) resistance value. R
Hold time of data bus is expressed in
t = −CR × ln(1 − VOL/VCC2) DBi
by a circuit of the right figure. C
For example, when VOL = 0.2VCC2, C = 30 pF, R = 1 kΩ,
hold time of output low level is
t = −30 pF × 1 kΩ × In(1 − 0.2VCC2/VCC2)
= 6.7 ns.
P0
P1
P2
P3 30 pF
P4
P5
P6
P7
P8
P9
P10
Read timing
BCLK
td(BCLK-CS) th(BCLK-CS)
30ns(max.) 0ns(min.)
CSi
tcyc
td(BCLK-AD) th(BCLK-AD)
30ns(max.) 0ns(min.)
ADi
BHE
td(BCLK-ALE) th(BCLK-ALE) th(RD-AD)
25ns(max.) -4ns(min.) 0ns(min.)
ALE
td(BCLK-RD) th(BCLK-RD)
30ns(max.) 0ns(min.)
RD
tac1(RD-DB)
(0.5 × t cyc-60)ns(max.)
Hi-Z
DBi
tsu(DB-RD) th(RD-DB)
50ns(min.) 0ns(min.)
Write timing
BCLK
td(BCLK-CS) th(BCLK-CS)
30ns(max.)
0ns(min.)
CSi
tcyc
td(BCLK-AD) th(BCLK-AD)
30ns(max.) 0ns(min.)
ADi
BHE
td(BCLK-ALE) th(BCLK-ALE)
25ns(max.) -4ns(min.) th(WR-AD)
(0.5 × t cyc-10)ns(min.)
ALE
td(BCLK-WR) th(BCLK-WR)
30ns(max.) 0ns(min.)
WR, WRL,
WRH
td(BCLK-DB) th(BCLK-DB)
40ns(max.) 0ns(min.)
Hi-Z
DBi
td(DB-WR) th(WR-DB)
(0.5 × t cyc-40)ns(min.) (0.5 × t cyc-10)ns(min.)
tcyc = 1
f(BCLK)
Measuring conditions
y VCC1 = VCC2 = 3V
y Input timing voltage: VIL = 0.6 V, VIH = 2.4 V
y Output timing voltage: VOL = 1.5 V, VOH = 1.5 V
VCC1 = VCC2 = 3V
Switching Characteristics
(VCC1 = VCC2 = 3 V, VSS = 0 V, at Topr = -20°C to 85°C/-40°C to 85°C unless otherwise specified)
Table 5.56 Memory Expansion Mode and Microprocessor Mode (in 1 to 3 Waits Setting and When
Accessing External Area)
Measuring Standard
Symbol Parameter Unit
Condition Min. Max.
td(BCLK-AD) Address output delay time 30 ns
th(BCLK-AD) Address output hold time (in relation to BCLK) 0 ns
th(RD-AD) Address output hold time (in relation to RD) 0 ns
th(WR-AD) Address output hold time (in relation to WR) (Note 2) ns
td(BCLK-CS) Chip select output delay time 30 ns
th(BCLK-CS) Chip select output hold time (in relation to BCLK) 0 ns
td(BCLK-ALE) ALE signal output delay time 25 ns
th(BCLK-ALE) ALE signal output hold time See -4 ns
td(BCLK-RD) RD signal output delay time Figure 5.27 30 ns
th(BCLK-RD) RD signal output hold time 0 ns
td(BCLK-WR) WR signal output delay time 30 ns
th(BCLK-WR) WR signal output hold time 0 ns
td(BCLK-DB) Data output delay time (in relation to BCLK) 40 ns
th(BCLK-DB) Data output hold time (in relation to BCLK) (3) 0 ns
td(DB-WR) Data output delay time (in relation to WR) (Note 1) ns
th(WR-DB) Data output hold time (in relation to WR) (3) (Note 2) ns
Notes:
1. Calculated according to the BCLK frequency as follows:
9
(-----------------------------------
n – 0.5 ) × 10 - – 40 [ ns ] n is 1 for 1 wait setting, 2 for 2 waits setting and 3 for 3 waits setting.
f ( BCLK ) When n = 1, f(BCLK) is 12.5 MHz or less.
Read timing
BCLK
td(BCLK-CS) th(BCLK-CS)
30ns(max.) 0ns(min.)
CSi
tcyc
td(BCLK-AD) th(BCLK-AD)
30ns(max.) 0ns(min.)
ADi
BHE
td(BCLK-ALE) th(BCLK-ALE) th(RD-AD)
25ns(max.) -4ns(min.) 0ns(min.)
ALE
td(BCLK-RD) th(BCLK-RD)
30ns(max.) 0ns(min.)
RD
tac2(RD-DB)
{(n+0.5) × tcyc -60}ns(max.)
Hi-Z
DBi
th(RD-DB)
tsu(DB-RD) 0ns(min.)
50ns(min.)
Write timing
BCLK
td(BCLK-CS) th(BCLK-CS)
30ns(max.) 0ns(min.)
CSi
tcyc
td(BCLK-AD) th(BCLK-AD)
30ns(max.) 0ns(min.)
ADi
BHE
td(BCLK-ALE) th(BCLK-ALE)
25ns(max.) -4ns(min.) th(WR-AD)
(0.5 × t cyc-10)ns(min.)
ALE
td(BCLK-WR) th(BCLK-WR)
30ns(max.) 0ns(min.)
WR, WRL,
WRH
td(BCLK-DB)
40ns(max.) th(BCLK-DB)
0ns(min.)
Hi-Z
DBi
td(DB-WR) th(WR-DB)
{(n-0.5) × tcyc -40}ns(min.) (0.5 × t cyc-10)ns(min.)
1
tcyc =
f(BCLK)
VCC1 = VCC2 = 3V
Switching Characteristics
(VCC1 = VCC2 = 3 V, VSS = 0 V, at Topr = -20°C to 85°C/-40°C to 85°C unless otherwise specified)
5.3.4.3 In 2 or 3 Waits Setting, and When Accessing External Area and Using
Multiplexed Bus
Table 5.57 Memory Expansion Mode and Microprocessor Mode (in 2 or 3 Waits Setting, and When
Accessing External Area and Using Multiplexed Bus) (5)
Measuring Standard
Symbol Parameter Unit
Condition Min. Max.
td(BCLK-AD) Address output delay time 50 ns
th(BCLK-AD) Address output hold time (in relation to BCLK) 0 ns
th(RD-AD) Address output hold time (in relation to RD) (Note 1) ns
th(WR-AD) Address output hold time (in relation to WR) (Note 1) ns
td(BCLK-CS) Chip select output delay time 50 ns
th(BCLK-CS) Chip select output hold time (in relation to BCLK) 0 ns
th(RD-CS) Chip select output hold time (in relation to RD) (Note 1) ns
th(WR-CS) Chip select output hold time (in relation to WR) (Note 1) ns
td(BCLK-RD) RD signal output delay time 40 ns
th(BCLK-RD) RD signal output hold time 0 ns
td(BCLK-WR) WR signal output delay time 40 ns
See
th(BCLK-WR) WR signal output hold time 0 ns
Figure 5.27
td(BCLK-DB) Data output delay time (in relation to BCLK) 50 ns
th(BCLK-DB) Data output hold time (in relation to BCLK) 0 ns
td(DB-WR) Data output delay time (in relation to WR) (Note 2) ns
th(WR-DB) Data output hold time (in relation to WR) (Note 1) ns
td(BCLK-ALE) ALE signal output delay time (in relation to BCLK) 25 ns
th(BCLK-ALE) ALE signal output hold time (in relation to BCLK) −4 ns
td(AD-ALE) ALE signal output delay time (in relation to Address) (Note 3) ns
th(AD-ALE) ALE signal output hold time (in relation to Address) (Note 4) ns
td(AD-RD) RD signal output delay from the end of address 0 ns
td(AD-WR) WR signal output delay from the end of address 0 ns
tdz(RD-AD) Address output floating start time 8 ns
Notes:
9
0.5 × 10
1. Calculated according to the BCLK frequency as follows: ---------------------- – 10 [ ns ]
f ( BCLK )
2. Calculated according to the BCLK frequency as follows:
9
( n – 0.5 ) × 10 - – 50 [ ns ]
----------------------------------- n is 2 for 2 waits setting, 3 for 3 waits setting.
f ( BCLK )
9
3.
0.5 × 10
Calculated according to the BCLK frequency as follows: ---------------------- – 40 [ ns ]
f ( BCLK )
9
4.
0.5 × 10
Calculated according to the BCLK frequency as follows: ---------------------- – 15 [ ns ]
f ( BCLK )
5. When using multiplexed bus, set f(BCLK) 12.5 MHz or less.
Read timing
BCLK th(BCLK-CS)
td(BCLK-CS) th(RD-CS) 0ns(min.)
50ns(max.) tcyc
(0.5 × t cyc-10)ns(min.)
CSi
td(AD-ALE) th(ALE-AD)
(0.5 × t cyc-40ns(min.) (0.5 × t cyc-15ns(min.)
td(AD-RD)
td(BCLK-AD) 0ns(min.)
50ns(max.) th(BCLK-AD)
0ns(min.)
ADi
BHE
td(BCLK-ALE) th(BCLK-ALE)
25ns(max.) th(RD-AD)
-4ns(min.)
(0.5 × t cyc-10)ns(min.)
ALE
td(BCLK-RD) th(BCLK-RD)
40ns(max.) 0ns(min.)
RD
Write timing
BCLK
td(BCLK-CS) tcyc th(BCLK-CS)
50ns(max.) th(WR-CS) 0ns(min.)
(0.5 × t cyc-10)ns(min.)
CSi
td(BCLK-DB) th(BCLK-DB)
50ns(max.) 0ns(min.)
ADi Address Data output Address
/DBi
td(AD-ALE) td(DB-WR) th(WR-DB)
(0.5 × t cyc-40ns(min.) {(n-0.5) × tcyc -50}ns(min.) (0.5 × t cyc-10)ns(min.)
td(BCLK-AD) th(BCLK-AD)
50ns(max.) 0ns(min.)
ADi
BHE
td(BCLK-ALE) th(BCLK-ALE) td(AD-WR)
25ns(max.) -4ns(min.) 0ns(min.)
th(WR-AD)
(0.5 × t cyc-10)ns(min.)
ALE
td(BCLK-WR) th(BCLK-WR)
40ns(max.) 0ns(min.)
WR, WRL,
WRH
1
tcyc =
f(BCLK)
HD
*1
D
80 51
81 50
NOTE)
1. DIMENSIONS "*1" AND "*2"
DO NOT INCLUDE MOLD FLASH.
2. DIMENSION "*3" DOES NOT
INCLUDE TRIM OFFSET.
HE
E
*2
Symbol
Min Nom Max
100
31
D 19.8 20.0 20.2
E 13.8 14.0 14.2
A2 2.8
1
ZD Index mark
30 c HD 22.5 22.8 23.1
F
HE 16.5 16.8 17.1
A2
A 3.05
A1 0 0.1 0.2
A
HD
*1
D
75 51
NOTE)
1. DIMENSIONS "*1" AND "*2"
76 50 DO NOT INCLUDE MOLD FLASH.
2. DIMENSION "*3" DOES NOT
INCLUDE TRIM OFFSET.
bp
b1
HE
E
c1
Symbol
c
A 1.7
1 25 A1 0.05 0.1 0.15
Index mark bp 0.15 0.20 0.25
ZD
F b1 0.18
c 0.09 0.145 0.20
c1 0.125
A2
A
0° 8°
c
e 0.5
y *3 x 0.08
A1
e bp L
x
L1 y 0.08
ZD 1.0
Detail F
ZE 1.0
L 0.35 0.5 0.65
L1 1.0
Description
Rev. Date
Page Summary
1.01 Feb 03, 2009 - First Edition issued.
1.10 Jul 15, 2009 - Watchdog Timer Reset Register → Watchdog Timer Refresh Register
3 Table 1.2 Specifications for the 100-Pin Package (2/2) partially modified
4 Table 1.3 Product List partially modified
5 Figure 1.2 Marking Diagram (Top View) partially modified
18 Figure 3.2 Memory Map 13800h → 13000h
20 Table 4.1 “SFR Information (1/16)” reset value in VCR1 modified
21 Table 4.2 “SFR Information (2/16)” partially modified
29 Table 4.10 “SFR Information (10/16)” reset value in S11 modified
37 Table 5.1 Absolute Maximum Ratings partially modified
38 Table 5.2 Recommended Operating Conditions (1/3) partially modified
39 Table 5.3 Recommended Operating Conditions (2/3) partially modified
40 Table 5.4 Recommended Operating Conditions (3/3) added
40 Figure 5.1 Ripple Waveform added
41 Table 5.5 A/D Conversion Characteristics (1/2) partially modified
41 Figure 5.2 A/D Accuracy Measure Circuit added
42 Table 5.6 A/D Conversion Characteristics (2/2) partially modified
44 Table 5.8 CPU Clock When Operating Flash Memory (f(BCLK)) partially modified
44 Table 5.9 Flash Memory (Program ROM 1, 2) Electrical Characteristics notes modified
46 Table 5.11 Voltage Detector 0 Electrical Characteristics partially modified
46 Table 5.12 Voltage Detector 1 Electrical Characteristics partially modified
47 Table 5.13 Voltage Detector 2 Electrical Characteristics partially modified
47 Table 5.14 Power-On Reset Circuit partially modified
48 Figure 5.3 Power-On Reset Circuit Electrical Characteristics partially modified
50 Table 5.16 125 kHz On-Chip Oscillator Circuit Electrical Characteristics partially modified
53 Table 5.19 Electrical Characteristics (3) partially modified
54 Table 5.20 Electrical Characteristics (4) partially modified
55 5.2.2.1 Reset Input (RESET Input) added
69 Table 5.37 Electrical Characteristics (1) partially modified
70 Table 5.38 Electrical Characteristics (2) partially modified
71 Table 5.39 Electrical Characteristics (3) partially modified
73 5.3.2.1 Reset Input (RESET Input) added
Same modifications made to both 3 V and 5 V specifications.
2.00 Feb 07, 2011 Overall 001Ah Voltage Detector Operation Enable Register: Changed reset value from “000X
0000b”.
Overall 002Ah Voltage Monitor 0 Control Register: Changed reset value from “1100 XX10b”.
Overall 002Bh Voltage Monitor 1 Control Register: Changed reset value from “1000 1X10b”.
Overall 0324h Increment/Decrement Flag: Changed name from Up/Down Flag.
Overall 033Eh Timer B2 Special Mode Register: Changed reset value from “XX00 0000b”.
Overall 03A2h Open-Circuit Detection Assist Function Register: Changed reset value from “XXXX
XX00b”.
Overall 03DCh D/A Control Register: Changed reset value from “XXXX XX00b”.
Overall D08Ah to D08Bh PMC0 Counter Value Register: Deleted.
Overall D09Eh to D09Fh PMC1 Counter Value Register: Deleted.
Overall Changed “high-speed clock mode” to “fast-mode”.
Overview
3 Table 1.2 Specifications for the 100-Pin Package (2/2): Deleted note 1.
4 Table 1.3 Product List: Added the new part numbers.
5 Figure 1.1 Part No., with Memory Size and Package: Added “K” to the Memory capacity.
11 Table 1.6 Pin Functions for the 100-Pin Package (1/3): Changed the description of HOLD
pin.
A-1
REVISION HISTORY M16C/64A Group Datasheet
Description
Rev. Date
Page Summary
2.00 Feb 07, 2011 Address Space
18 Figure 3.2 Memory Map:
• Added the address of 384 KB version.
• Added note 1 and 3 to the reserved areas.
Special Function Registers (SFRs)
20 Table 4.1 SFR Information (1) (1):
• Deleted “the VCR1 register, the VCR2 register” from note 2.
• Deleted notes 5 to 6 and added note 5.
21 Table 4.2 SFR Information (2) (1): Deleted notes 2 to 7 and added note 2.
38 4.2.1 Register Settings: Added the description regarding read-modify-write instructions.
39 Table 4.20 Read-Modify-Write Instructions: Added.
Electrical Characteristics
40 Table 5.1 Absolute Maximum Ratings:
Added a row for the data area value to Topr (Flash program erase).
41 Table 5.2 Recommended Operating Conditions (1/3):
Added rows for the CEC value to VCC1, VCC2, VIH, and VIL.
45 Table 5.9 Flash Memory (Program ROM 1, 2) Electrical Characteristics:
Added a condition to the Read voltage row.
48 Table 5.14 Power-On Reset Circuit:
• Added the tw(por) row.
• Added the last line in note 1.
48 Figure 5.3 Power-On Reset Circuit Electrical Characteristics: Deleted note 2.
52 Table 5.18 Electrical Characteristics (2) (1): Added “ZP, IDU, IDV, IDW” to the VT+-VT- row.
54 Table 5.20 Electrical Characteristics (4): Added new part numbers above the table.
60, 78 Table 5.33 and Table 5.53 Multi-master I2C-bus: Added.
61 Table 5.34 Memory Expansion Mode and Microprocessor Mode:
Changed RDY input setup time from 30.
61 to 68, Table 5.34 to Table 5.37 and Table 5.54 to Table 5.57 Memory Expansion Mode and
79 to 86 Microprocessor Mode:
Deleted the following:
• HOLD input setup time
• HOLD input hold time
• HLDA output delay time
62, 80 Figure 5.13 and Figure 5.26 Timing Diagram:
Deleted lower figure (Common to wait state and no wait state settings).
70 Table 5.38 Electrical Characteristics (1) (1):
• Added rows for the CEC value to Leakage current in powered-off state, VT+-VT-, and
VOL.
• Added “ZP, IDU, IDV, IDW” to the VT+-VT- row.
71 Table 5.39 Electrical Characteristics (2): Changed “VCC1 = 5.0 V” to "VCC1 = 3.0 V" in the
During flash memory program and During flash memory erase rows.
72 Table 5.40 Electrical Characteristics (3):
• Added new part numbers above the table.
• Changed “VCC1 = 5.0 V” to "VCC1 = 3.0 V" in the During flash memory program and
During flash memory erase rows.
79 Table 5.54 Memory Expansion Mode and Microprocessor Mode:
Changed RDY input setup time from 40.
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A-2
General Precautions in the Handling of MPU/MCU Products
The following usage notes are applicable to all MPU/MCU products from Renesas. For detailed usage notes
on the products covered by this manual, refer to the relevant sections of the manual. If the descriptions under
General Precautions in the Handling of MPU/MCU Products and in the body of the manual differ from each
other, the description in the body of the manual takes precedence.