Showing 1–31 of 31 results for author: Zwanenburg, A

Graph data modelling for outcome prediction in oropharyngeal cancer patients

Authors: Nithya Bhasker, Stefan Leger, Alexander Zwanenburg, Chethan Babu Reddy, Sebastian Bodenstedt, Steffen Löck, Stefanie Speidel

Abstract: Graph neural networks (GNNs) are becoming increasingly popular in the medical domain for the tasks of disease classification and outcome prediction. Since patient data is not readily available as a graph, most existing methods either manually define a patient graph, or learn a latent graph based on pairwise similarities between the patients. There are also hypergraph neural network (HGNN)-based me… ▽ More Graph neural networks (GNNs) are becoming increasingly popular in the medical domain for the tasks of disease classification and outcome prediction. Since patient data is not readily available as a graph, most existing methods either manually define a patient graph, or learn a latent graph based on pairwise similarities between the patients. There are also hypergraph neural network (HGNN)-based methods that were introduced recently to exploit potential higher order associations between the patients by representing them as a hypergraph. In this work, we propose a patient hypergraph network (PHGN), which has been investigated in an inductive learning setup for binary outcome prediction in oropharyngeal cancer (OPC) patients using computed tomography (CT)-based radiomic features for the first time. Additionally, the proposed model was extended to perform time-to-event analyses, and compared with GNN and baseline linear models. △ Less

Submitted 4 October, 2023; originally announced October 2023.

Strong spin-orbit interaction and $g$-factor renormalization of hole spins in Ge/Si nanowire quantum dots

Authors: F. N. M. Froning, M. J. Rančić, B. Hetényi, S. Bosco, M. K. Rehmann, A. Li, E. P. A. M. Bakkers, F. A. Zwanenburg, D. Loss, D. M. Zumbühl, F. R. Braakman

Abstract: The spin-orbit interaction lies at the heart of quantum computation with spin qubits, research on topologically non-trivial states, and various applications in spintronics. Hole spins in Ge/Si core/shell nanowires experience a spin-orbit interaction that has been predicted to be both strong and electrically tunable, making them a particularly promising platform for research in these fields. We exp… ▽ More The spin-orbit interaction lies at the heart of quantum computation with spin qubits, research on topologically non-trivial states, and various applications in spintronics. Hole spins in Ge/Si core/shell nanowires experience a spin-orbit interaction that has been predicted to be both strong and electrically tunable, making them a particularly promising platform for research in these fields. We experimentally determine the strength of spin-orbit interaction of hole spins confined to a double quantum dot in a Ge/Si nanowire by measuring spin-mixing transitions inside a regime of spin-blockaded transport. We find a remarkably short spin-orbit length of $\sim$65 nm, comparable to the quantum dot length and the interdot distance. We additionally observe a large orbital effect of the applied magnetic field on the hole states, resulting in a large magnetic field dependence of the spin-mixing transition energies. Strikingly, together with these orbital effects, the strong spin-orbit interaction causes a significant enhancement of the $g$-factor with magnetic field.The large spin-orbit interaction strength demonstrated is consistent with the predicted direct Rashba spin-orbit interaction in this material system and is expected to enable ultrafast Rabi oscillations of spin qubits and efficient qubit-qubit interactions, as well as provide a platform suitable for studying Majorana zero modes. △ Less

Submitted 8 July, 2020; originally announced July 2020.

Journal ref: Phys. Rev. Research 3, 013081 (2021)

Standardised convolutional filtering for radiomics

Authors: Adrien Depeursinge, Vincent Andrearczyk, Philip Whybra, Joost van Griethuysen, Henning Müller, Roger Schaer, Martin Vallières, Alex Zwanenburg

Abstract: The Image Biomarker Standardisation Initiative (IBSI) aims to improve reproducibility of radiomics studies by standardising the computational process of extracting image biomarkers (features) from images. We have previously established reference values for 169 commonly used features, created a standard radiomics image processing scheme, and developed reporting guidelines for radiomic studies. Howe… ▽ More The Image Biomarker Standardisation Initiative (IBSI) aims to improve reproducibility of radiomics studies by standardising the computational process of extracting image biomarkers (features) from images. We have previously established reference values for 169 commonly used features, created a standard radiomics image processing scheme, and developed reporting guidelines for radiomic studies. However, several aspects are not standardised. Here we present a complete version of a reference manual on the use of convolutional filters in radiomics and quantitative image analysis. Filters, such as wavelets or Laplacian of Gaussian filters, play an important part in emphasising specific image characteristics such as edges and blobs. Features derived from filter response maps were found to be poorly reproducible. This reference manual provides definitions for convolutional filters, parameters that should be reported, reference feature values, and tests to verify software compliance with the reference standard. △ Less

Submitted 7 February, 2024; v1 submitted 9 June, 2020; originally announced June 2020.

Comments: 87 pages. For additional information see https://theibsi.github.io/

MSC Class: 68U10 (Primary) 68T45 (Secondary) ACM Class: I.4.7; J.3

The germanium quantum information route

Authors: Giordano Scappucci, Christoph Kloeffel, Floris A. Zwanenburg, Daniel Loss, Maksym Myronov, Jian-Jun Zhang, Silvano De Franceschi, Georgios Katsaros, Menno Veldhorst

Abstract: In the worldwide endeavor for disruptive quantum technologies, germanium is emerging as a versatile material to realize devices capable of encoding, processing, or transmitting quantum information. These devices leverage special properties of the germanium valence-band states, commonly known as holes, such as their inherently strong spin-orbit coupling and the ability to host superconducting pairi… ▽ More In the worldwide endeavor for disruptive quantum technologies, germanium is emerging as a versatile material to realize devices capable of encoding, processing, or transmitting quantum information. These devices leverage special properties of the germanium valence-band states, commonly known as holes, such as their inherently strong spin-orbit coupling and the ability to host superconducting pairing correlations. In this Review, we initially introduce the physics of holes in low-dimensional germanium structures with key insights from a theoretical perspective. We then examine the material science progress underpinning germanium-based planar heterostructures and nanowires. We review the most significant experimental results demonstrating key building blocks for quantum technology, such as an electrically driven universal quantum gate set with spin qubits in quantum dots and superconductor-semiconductor devices for hybrid quantum systems. We conclude by identifying the most promising prospects toward scalable quantum information processing. △ Less

Submitted 17 April, 2020; originally announced April 2020.

Journal ref: Nat Rev Mater (2020)

Single-charge occupation in ambipolar quantum dots

Authors: A. J. Sousa de Almeida, A. Marquez Seco, T. van den Berg, B. van de Ven, F. Bruijnes, S. V. Amitonov, F. A. Zwanenburg

Abstract: We demonstrate single-charge occupation of ambipolar quantum dots in silicon via charge sensing. We have fabricated ambipolar quantum dot (QD) devices in a silicon metal-oxide-semiconductor heterostructure comprising a single-electron transistor next to a single-hole transistor. Both QDs can be tuned to simultaneously sense charge transitions of the other. We further detect the few-electron and fe… ▽ More We demonstrate single-charge occupation of ambipolar quantum dots in silicon via charge sensing. We have fabricated ambipolar quantum dot (QD) devices in a silicon metal-oxide-semiconductor heterostructure comprising a single-electron transistor next to a single-hole transistor. Both QDs can be tuned to simultaneously sense charge transitions of the other. We further detect the few-electron and few-hole regimes in the QDs of our ambipolar device by active charge sensing. △ Less

Submitted 14 January, 2020; originally announced January 2020.

Comments: 13 pages, 4 figures

Journal ref: Phys. Rev. B 101, 201301 (2020)

Multiple Andreev reflections and Shapiro steps in a Ge-Si nanowire Josephson junction

Authors: Joost Ridderbos, Matthias Brauns, Ang Li, Erik P. A. M. Bakkers, Alexander Brinkman, Wilfred G. van der Wiel, Floris A. Zwanenburg

Abstract: We present a Josephson junction based on a Ge-Si core-shell nanowire with transparent superconducting Al contacts, a building block which could be of considerable interest for investigating Majorana bound states, superconducting qubits and Andreev (spin) qubits. We demonstrate the dc Josephson effect in the form of a finite supercurrent through the junction, and establish the ac Josephson effect b… ▽ More We present a Josephson junction based on a Ge-Si core-shell nanowire with transparent superconducting Al contacts, a building block which could be of considerable interest for investigating Majorana bound states, superconducting qubits and Andreev (spin) qubits. We demonstrate the dc Josephson effect in the form of a finite supercurrent through the junction, and establish the ac Josephson effect by showing up to 23 Shapiro steps. We observe multiple Andreev reflections up to the sixth order, indicating that charges can scatter elastically many times inside our junction, and that our interfaces between superconductor and semiconductor are transparent and have low disorder. △ Less

Submitted 20 August, 2019; originally announced August 2019.

Journal ref: Phys. Rev. Materials 3, 084803 (2019)

Hard superconducting gap and diffusion-induced superconductors in Ge-Si nanowires

Authors: Joost Ridderbos, Matthias Brauns, Jie Shen, Folkert K. de Vries, Ang Li, Sebastian Kölling, Marcel A. Verheijen, Alexander Brinkman, Wilfred G. van der Wiel, Erik P. A. M. Bakkers, Floris A. Zwanenburg

Abstract: We show a hard induced superconducting gap in a Ge-Si nanowire Josephson transistor up to in-plane magnetic fields of $250$ mT, an important step towards creating and detecting Majorana zero modes in this system. A hard induced gap requires a highly homogeneous tunneling heterointerface between the superconducting contacts and the semiconducting nanowire. This is realized by annealing devices at… ▽ More We show a hard induced superconducting gap in a Ge-Si nanowire Josephson transistor up to in-plane magnetic fields of $250$ mT, an important step towards creating and detecting Majorana zero modes in this system. A hard induced gap requires a highly homogeneous tunneling heterointerface between the superconducting contacts and the semiconducting nanowire. This is realized by annealing devices at $180$ $^\circ$C during which aluminium inter-diffuses and replaces the germanium in a section of the nanowire. Next to Al, we find a superconductor with lower critical temperature ($T_\mathrm{C}=0.9$ K) and a higher critical field ($B_\mathrm{C}=0.9-1.2$ T). We can therefore selectively switch either superconductor to the normal state by tuning the temperature and the magnetic field and observe that the additional superconductor induces a proximity supercurrent in the semiconducting part of the nanowire even when the Al is in the normal state. In another device where the diffusion of Al rendered the nanowire completely metallic, a superconductor with a much higher critical temperature ($T_\mathrm{C}=2.9$ K) and critical field ($B_\mathrm{C}=3.4$ T) is found. The small size of diffusion-induced superconductors inside nanowires may be of special interest for applications requiring high magnetic fields in arbitrary direction. △ Less

Submitted 20 December, 2019; v1 submitted 11 July, 2019; originally announced July 2019.

Josephson effect in a few-hole quantum dot

Authors: Joost Ridderbos, Matthias Brauns, Jie Shen, Folkert K. de Vries, Ang Li, Erik P. A. M. Bakkers, Alexander Brinkman, Floris A. Zwanenburg

Abstract: We use a Ge-Si core-shell nanowire to realise a Josephson field-effect transistor with highly transparent contacts to superconducting leads. By changing the electric field we gain access to two distinct regimes not combined before in a single device: In the accumulation mode the device is highly transparent and the supercurrent is carried by multiple subbands, while near depletion supercurrent is… ▽ More We use a Ge-Si core-shell nanowire to realise a Josephson field-effect transistor with highly transparent contacts to superconducting leads. By changing the electric field we gain access to two distinct regimes not combined before in a single device: In the accumulation mode the device is highly transparent and the supercurrent is carried by multiple subbands, while near depletion supercurrent is carried by single-particle levels of a strongly coupled quantum dot operating in the few-hole regime. These results establish Ge-Si nanowires as an important platform for hybrid superconductor-semiconductor physics and Majorana fermions. △ Less

Submitted 22 September, 2018; originally announced September 2018.

Journal ref: Adv. Mater. 2018, 1802257

Assessing robustness of radiomic features by image perturbation

Authors: Alex Zwanenburg, Stefan Leger, Linda Agolli, Karoline Pilz, Esther G. C. Troost, Christian Richter, Steffen Löck

Abstract: Image features need to be robust against differences in positioning, acquisition and segmentation to ensure reproducibility. Radiomic models that only include robust features can be used to analyse new images, whereas models with non-robust features may fail to predict the outcome of interest accurately. Test-retest imaging is recommended to assess robustness, but may not be available for the phen… ▽ More Image features need to be robust against differences in positioning, acquisition and segmentation to ensure reproducibility. Radiomic models that only include robust features can be used to analyse new images, whereas models with non-robust features may fail to predict the outcome of interest accurately. Test-retest imaging is recommended to assess robustness, but may not be available for the phenotype of interest. We therefore investigated 18 methods to determine feature robustness based on image perturbations. Test-retest and perturbation robustness were compared for 4032 features that were computed from the gross tumour volume in two cohorts with computed tomography imaging: I) 31 non-small-cell lung cancer (NSCLC) patients; II): 19 head-and-neck squamous cell carcinoma (HNSCC) patients. Robustness was measured using the intraclass correlation coefficient (1,1) (ICC). Features with ICC$\geq0.90$ were considered robust. The NSCLC cohort contained more robust features for test-retest imaging than the HNSCC cohort ($73.5\%$ vs. $34.0\%$). A perturbation chain consisting of noise addition, affine translation, volume growth/shrinkage and supervoxel-based contour randomisation identified the fewest false positive robust features (NSCLC: $3.3\%$; HNSCC: $10.0\%$). Thus, this perturbation chain may be used to assess feature robustness. △ Less

Submitted 18 June, 2018; originally announced June 2018.

Comments: 31 pages, 14 figures pre-submission version

Journal ref: Scientific Reports (2019) 9:614

Spin-orbit interaction and induced superconductivity in an one-dimensional hole gas

Authors: F. K. de Vries, J. Shen, R. J. Skolasinski, M. P. Nowak, D. Varjas, L. Wang, M. Wimmer, J. Ridderbos, F. A. Zwanenburg, A. Li, S. Koelling, M. A. Verheijen, E. P. A. M. Bakkers, L. P. Kouwenhoven

Abstract: Low dimensional semiconducting structures with strong spin-orbit interaction (SOI) and induced superconductivity attracted much interest in the search for topological superconductors. Both the strong SOI and hard superconducting gap are directly related to the topological protection of the predicted Majorana bound states. Here we explore the one-dimensional hole gas in germanium silicon (Ge-Si) co… ▽ More Low dimensional semiconducting structures with strong spin-orbit interaction (SOI) and induced superconductivity attracted much interest in the search for topological superconductors. Both the strong SOI and hard superconducting gap are directly related to the topological protection of the predicted Majorana bound states. Here we explore the one-dimensional hole gas in germanium silicon (Ge-Si) core-shell nanowires (NWs) as a new material candidate for creating a topological superconductor. Fitting multiple Andreev reflection measurements shows that the NW has two transport channels only, underlining its one-dimensionality. Furthermore, we find anisotropy of the Lande g-factor, that, combined with band structure calculations, provides us qualitative evidence for direct Rashba SOI and a strong orbital effect of the magnetic field. Finally, a hard superconducting gap is found in the tunneling regime, and the open regime, where we use the Kondo peak as a new tool to gauge the quality of the superconducting gap. △ Less

Submitted 21 July, 2018; v1 submitted 5 June, 2018; originally announced June 2018.

Journal ref: Nanoletters 2018

Single, double, and triple quantum dots in Ge/Si nanowires

Authors: F. N. M. Froning, M. K. Rehmann, J. Ridderbos, M. Brauns, F. A. Zwanenburg, A. Li, E. P. A. M. Bakkers, D. M. Zumbühl, F. R. Braakman

Abstract: We report highly tunable control of holes in Ge/Si core/shell nanowires (NWs). We demonstrate the ability to create single quantum dots (QDs) of various sizes, with low hole occupation numbers and clearly observable excited states. For the smallest dot size we observe indications of single-hole occupation. Moreover, we create double and triple tunnel-coupled quantum dot arrays. In the double quant… ▽ More We report highly tunable control of holes in Ge/Si core/shell nanowires (NWs). We demonstrate the ability to create single quantum dots (QDs) of various sizes, with low hole occupation numbers and clearly observable excited states. For the smallest dot size we observe indications of single-hole occupation. Moreover, we create double and triple tunnel-coupled quantum dot arrays. In the double quantum dot configuration we observe Pauli spin blockade (PSB). These results open the way to perform hole spin qubit experiments in these devices. △ Less

Submitted 7 May, 2018; originally announced May 2018.

Journal ref: Appl. Phys. Lett. 113, 073102 (Aug 15, 2018)

A fabrication guide for planar silicon quantum dot heterostructures

Authors: Paul C. Spruijtenburg, Sergey V. Amitonov, Wilfred G. van der Wiel, Floris A. Zwanenburg

Abstract: We describe important considerations to create top-down fabricated planar quantum dots in silicon, often not discussed in detail in literature. The subtle interplay between intrinsic material properties, interfaces and fabrication processes plays a crucial role in the formation of electrostatically defined quantum dots. Processes such as oxidation, physical vapor deposition and atomic-layer deposi… ▽ More We describe important considerations to create top-down fabricated planar quantum dots in silicon, often not discussed in detail in literature. The subtle interplay between intrinsic material properties, interfaces and fabrication processes plays a crucial role in the formation of electrostatically defined quantum dots. Processes such as oxidation, physical vapor deposition and atomic-layer deposition must be tailored in order to prevent unwanted side effects such as defects, disorder and dewetting. In two directly related manuscripts written in parallel we use techniques described in this work to create depletion-mode quantum dots in intrinsic silicon, and low-disorder silicon quantum dots defined with palladium gates. While we discuss three different planar gate structures, the general principles also apply to 0D and 1D systems, such as self-assembled islands and nanowires. △ Less

Submitted 3 February, 2018; v1 submitted 26 September, 2017; originally announced September 2017.

Comments: Accepted for publication in Nanotechnology. 31 pages, 12 figures

Palladium gates for reproducible quantum dots in silicon

Authors: Matthias Brauns, Sergey V. Amitonov, Paul-Christiaan Spruijtenburg, Floris A. Zwanenburg

Abstract: We replace the established aluminium gates for the formation of quantum dots in silicon with gates made from palladium. We study the morphology of both aluminium and palladium gates with transmission electron microscopy. The native aluminium oxide is found to be formed all around the aluminium gates, which could lead to the formation of unintentional dots. Therefore, we report on a novel fabricati… ▽ More We replace the established aluminium gates for the formation of quantum dots in silicon with gates made from palladium. We study the morphology of both aluminium and palladium gates with transmission electron microscopy. The native aluminium oxide is found to be formed all around the aluminium gates, which could lead to the formation of unintentional dots. Therefore, we report on a novel fabrication route that replaces aluminium and its native oxide by palladium with atomic-layer-deposition-grown aluminium oxide. Using this approach, we show the formation of low-disorder gate-defined quantum dots, which are reproducibly fabricated. Furthermore, palladium enables us to further shrink the gate design, allowing us to perform electron transport measurements in the few-electron regime in devices comprising only two gate layers, a major technological advancement. It remains to be seen, whether the introduction of palladium gates can improve the excellent results on electron and nuclear spin qubits defined with an aluminium gate stack. △ Less

Submitted 20 April, 2018; v1 submitted 22 September, 2017; originally announced September 2017.

Journal ref: Scientific Reports 8, 5690, (2018)

Depletion-mode Quantum Dots in Intrinsic Silicon

Authors: Sergey V. Amitonov, Paul C. Spruijtenburg, Max W. S. Vervoort, Wilfred G. van der Wiel, Floris A. Zwanenburg

Abstract: We report the fabrication and electrical characterization of depletion-mode quantum dots in a two-dimensional hole gas (2DHG) in intrinsic silicon. We use fixed charge in a SiO$_2$/Al$_2$O$_3$ dielectric stack to induce a 2DHG at the Si/SiO$_2$ interface. Fabrication of the gate structures is accomplished with a single layer metallization process. Transport spectroscopy reveals regular Coulomb osc… ▽ More We report the fabrication and electrical characterization of depletion-mode quantum dots in a two-dimensional hole gas (2DHG) in intrinsic silicon. We use fixed charge in a SiO$_2$/Al$_2$O$_3$ dielectric stack to induce a 2DHG at the Si/SiO$_2$ interface. Fabrication of the gate structures is accomplished with a single layer metallization process. Transport spectroscopy reveals regular Coulomb oscillations with charging energies of 10-15 meV and 3-5 meV for the few- and many-hole regimes, respectively. This depletion-mode design avoids complex multilayer architectures requiring precision alignment, and allows to adopt directly best practices already developed for depletion dots in other material systems. We also demonstrate a method to deactivate fixed charge in the SiO$_2$/Al$_2$O$_3$ dielectric stack using deep ultraviolet light, which may become an important procedure to avoid unwanted 2DHG build-up in Si MOS quantum bits. △ Less

Submitted 3 February, 2018; v1 submitted 21 September, 2017; originally announced September 2017.

Comments: Accepted to Applied Physics Letters. 5 pages, 3 figures

Passivation and characterization of charge defects in ambipolar silicon quantum dots

Authors: P. C. Spruijtenburg, S. V. Amitonov, F. Mueller, W. G. van der Wiel, F. A. Zwanenburg

Abstract: In this Report we show the role of charge defects in the context of the formation of electrostatically defined quantum dots. We introduce a barrier array structure to probe defects at multiple locations in a single device. We measure samples both before and after an annealing process which uses an Al$_2$O$_3$ overlayer, grown by atomic layer deposition. After passivation of the majority of charge… ▽ More In this Report we show the role of charge defects in the context of the formation of electrostatically defined quantum dots. We introduce a barrier array structure to probe defects at multiple locations in a single device. We measure samples both before and after an annealing process which uses an Al$_2$O$_3$ overlayer, grown by atomic layer deposition. After passivation of the majority of charge defects with annealing we can electrostatically define hole quantum dots up to 180 nm in length. Our ambipolar structures reveal amphoteric charge defects that remain after annealing with charging energies of ~10 meV in both the positive and negative charge state. △ Less

Submitted 22 February, 2017; originally announced February 2017.

Comments: 9 pages, 4 figures, supplementary information

Journal ref: Scientific Reports 6, Article number: 38127 (2016)

Image biomarker standardisation initiative

Authors: Alex Zwanenburg, Stefan Leger, Martin Vallières, Steffen Löck

Abstract: The image biomarker standardisation initiative (IBSI) is an independent international collaboration which works towards standardising the extraction of image biomarkers from acquired imaging for the purpose of high-throughput quantitative image analysis (radiomics). Lack of reproducibility and validation of high-throughput quantitative image analysis studies is considered to be a major challenge f… ▽ More The image biomarker standardisation initiative (IBSI) is an independent international collaboration which works towards standardising the extraction of image biomarkers from acquired imaging for the purpose of high-throughput quantitative image analysis (radiomics). Lack of reproducibility and validation of high-throughput quantitative image analysis studies is considered to be a major challenge for the field. Part of this challenge lies in the scantiness of consensus-based guidelines and definitions for the process of translating acquired imaging into high-throughput image biomarkers. The IBSI therefore seeks to provide image biomarker nomenclature and definitions, benchmark data sets, and benchmark values to verify image processing and image biomarker calculations, as well as reporting guidelines, for high-throughput image analysis. △ Less

Submitted 17 December, 2019; v1 submitted 21 December, 2016; originally announced December 2016.

Comments: Added figures 2.5, 2.6. Replaced figure 2.7. Added missing section header for the normalised dependence count non-uniformity feature. Fixed layout issues with small font sizes that appeared in the last half of the document

MSC Class: I.2.1; I.2.10; I.4.7; I.4.9; J.3 ACM Class: I.2.1; I.2.10; I.4.7; I.4.9; J.3

Journal ref: Radiology (2020)

Anisotropic Pauli spin blockade in hole quantum dots

Authors: Matthias Brauns, Joost Ridderbos, Ang Li, Erik P. A. M. Bakkers, Wilfred G. van der Wiel, Floris A. Zwanenburg

Abstract: We present measurements on gate-defined double quantum dots in Ge-Si core-shell nanowires, which we tune to a regime with visible shell filling in both dots. We observe a Pauli spin blockade and can assign the measured leakage current at low magnetic fields to spin-flip cotunneling, for which we measure a strong anisotropy related to an anisotropic g-factor. At higher magnetic fields we see signat… ▽ More We present measurements on gate-defined double quantum dots in Ge-Si core-shell nanowires, which we tune to a regime with visible shell filling in both dots. We observe a Pauli spin blockade and can assign the measured leakage current at low magnetic fields to spin-flip cotunneling, for which we measure a strong anisotropy related to an anisotropic g-factor. At higher magnetic fields we see signatures for leakage current caused by spin-orbit coupling between (1,1)-singlet and (2,0)-triplet states. Taking into account these anisotropic spin-flip mechanisms, we can choose the magnetic field direction with the longest spin lifetime for improved spin-orbit qubits. △ Less

Submitted 30 July, 2016; originally announced August 2016.

Journal ref: Physical Review B, 94(2016), 041411(R)

Electric-field dependent g-factor anisotropy in Ge-Si core-shell nanowire quantum dots

Authors: Matthias Brauns, Joost Ridderbos, Ang Li, Erik P. A. M. Bakkers, Floris A. Zwanenburg

Abstract: We present angle-dependent measurements of the effective g-factor g* in a Ge-Si core-shell nanowire quantum dot. g* is found to be maximum when the magnetic field is pointing perpendicular to both the nanowire and the electric field induced by local gates. Alignment of the magnetic field with the electric field reduces g* significantly. g* is almost completely quenched when the magnetic field is a… ▽ More We present angle-dependent measurements of the effective g-factor g* in a Ge-Si core-shell nanowire quantum dot. g* is found to be maximum when the magnetic field is pointing perpendicular to both the nanowire and the electric field induced by local gates. Alignment of the magnetic field with the electric field reduces g* significantly. g* is almost completely quenched when the magnetic field is aligned with the nanowire axis. These findings confirm recent calculations, where the obtained anisotropy is attributed to a Rashba-type spin-orbit interaction induced by heavy-hole light-hole mixing. In principle, this facilitates manipulation of spin-orbit qubits by means of a continuous high-frequency electric field. △ Less

Submitted 18 March, 2016; originally announced March 2016.

Journal ref: Physical Review B, 93(12), 121408(R) (2016)

Printed Circuit Board Metal Powder Filters for Low Electron Temperatures

Authors: Filipp Mueller, Raymond N. Schouten, Matthias Brauns, Tian Gang, Wee Han Lim, Nai Shyan Lai, Andrew S. Dzurak, Wilfred G. van der Wiel, Floris A. Zwanenburg

Abstract: We report the characterisation of printed circuit boards (PCB) metal powder filters and their influence on the effective electron temperature which is as low as 22 mK for a quantum dot in a silicon MOSFET structure in a dilution refrigerator. We investigate the attenuation behaviour (10 MHz- 20 GHz) of filter made of four metal powders with a grain size below 50 um. The room-temperature attenuatio… ▽ More We report the characterisation of printed circuit boards (PCB) metal powder filters and their influence on the effective electron temperature which is as low as 22 mK for a quantum dot in a silicon MOSFET structure in a dilution refrigerator. We investigate the attenuation behaviour (10 MHz- 20 GHz) of filter made of four metal powders with a grain size below 50 um. The room-temperature attenuation of a stainless steel powder filter is more than 80 dB at frequencies above 1.5 GHz. In all metal powder filters the attenuation increases with temperature. Compared to classical powder filters, the design presented here is much less laborious to fabricate and specifically the copper powder PCB-filters deliver an equal or even better performance than their classical counterparts. △ Less

Submitted 17 April, 2013; v1 submitted 11 April, 2013; originally announced April 2013.

Comments: 13 pages, 5 figures, accepted for publication in Rev. Sci. Instrum

Journal ref: Rev. Sci. Instrum. 84, 044706 (2013)

Single-hole tunneling through a two-dimensional hole gas in intrinsic silicon

Authors: P. C. Spruijtenburg, J. Ridderbos, F. Mueller, A. W. Leenstra, M. Brauns, A. A. I. Aarnink, W. G. van der Wiel, F. A. Zwanenburg

Abstract: In this letter we report single-hole tunneling through a quantum dot in a two-dimensional hole gas, situated in a narrow-channel field-effect transistor in intrinsic silicon. Two layers of aluminum gate electrodes are defined on Si/SiO$_2$ using electron-beam lithography. Fabrication and subsequent electrical characterization of different devices yield reproducible results, such as typical MOSFET… ▽ More In this letter we report single-hole tunneling through a quantum dot in a two-dimensional hole gas, situated in a narrow-channel field-effect transistor in intrinsic silicon. Two layers of aluminum gate electrodes are defined on Si/SiO$_2$ using electron-beam lithography. Fabrication and subsequent electrical characterization of different devices yield reproducible results, such as typical MOSFET turn-on and pinch-off characteristics. Additionally, linear transport measurements at 4 K result in regularly spaced Coulomb oscillations, corresponding to single-hole tunneling through individual Coulomb islands. These Coulomb peaks are visible over a broad range in gate voltage, indicating very stable device operation. Energy spectroscopy measurements show closed Coulomb diamonds with single-hole charging energies of 5--10 meV, and lines of increased conductance as a result of resonant tunneling through additional available hole states. △ Less

Submitted 17 April, 2013; v1 submitted 10 April, 2013; originally announced April 2013.

Comments: 4 pages, 4 figures. This article has been submitted to Applied Physics Letters

Journal ref: Appl. Phys. Lett. 102, 192105 (2013)

High-fidelity readout and control of a nuclear spin qubit in silicon

Authors: Jarryd J. Pla, Kuan Y. Tan, Juan P. Dehollain, Wee H. Lim, John J. L. Morton, Floris A. Zwanenburg, David N. Jamieson, Andrew S. Dzurak, Andrea Morello

Abstract: A single nuclear spin holds the promise of being a long-lived quantum bit or quantum memory, with the high fidelities required for fault-tolerant quantum computing. We show here that such promise could be fulfilled by a single phosphorus (31P) nuclear spin in a silicon nanostructure. By integrating single-shot readout of the electron spin with on-chip electron spin resonance, we demonstrate the qu… ▽ More A single nuclear spin holds the promise of being a long-lived quantum bit or quantum memory, with the high fidelities required for fault-tolerant quantum computing. We show here that such promise could be fulfilled by a single phosphorus (31P) nuclear spin in a silicon nanostructure. By integrating single-shot readout of the electron spin with on-chip electron spin resonance, we demonstrate the quantum non-demolition, electrical single-shot readout of the nuclear spin, with readout fidelity better than 99.8% - the highest for any solid-state qubit. The single nuclear spin is then operated as a qubit by applying coherent radiofrequency (RF) pulses. For an ionized 31P donor we find a nuclear spin coherence time of 60 ms and a 1-qubit gate control fidelity exceeding 98%. These results demonstrate that the dominant technology of modern electronics can be adapted to host a complete electrical measurement and control platform for nuclear spin-based quantum information processing. △ Less

Submitted 31 January, 2013; originally announced February 2013.

Comments: 18 pages, 5 figures

Journal ref: Nature 496, 334 (2013)

Silicon Quantum Electronics

Authors: Floris A. Zwanenburg, Andrew S. Dzurak, Andrea Morello, Michelle Y. Simmons, Lloyd C. L. Hollenberg, Gerhard Klimeck, Sven Rogge, Susan N. Coppersmith, Mark A. Eriksson

Abstract: This review describes recent groundbreaking results in Si, Si/SiGe and dopant-based quantum dots, and it highlights the remarkable advances in Si-based quantum physics that have occurred in the past few years. This progress has been possible thanks to materials development for both Si quantum devices, and thanks to the physical understanding of quantum effects in silicon. Recent critical steps inc… ▽ More This review describes recent groundbreaking results in Si, Si/SiGe and dopant-based quantum dots, and it highlights the remarkable advances in Si-based quantum physics that have occurred in the past few years. This progress has been possible thanks to materials development for both Si quantum devices, and thanks to the physical understanding of quantum effects in silicon. Recent critical steps include the isolation of single electrons, the observation of spin blockade and single-shot read-out of individual electron spins in both dopants and gated quantum dots in Si. Each of these results has come with physics that was not anticipated from previous work in other material systems. These advances underline the significant progress towards the realization of spin quantum bits in a material with a long spin coherence time, crucial for quantum computation and spintronics. △ Less

Submitted 16 April, 2013; v1 submitted 22 June, 2012; originally announced June 2012.

Comments: Accepted for publication in Reviews of Modern Physics. 64 pages, 62 figures

Journal ref: Rev. Mod. Phys. 85, 961 (2013)

Dynamically controlled charge sensing of a few-electron silicon quantum dot

Authors: C. H. Yang, W. H. Lim, F. A. Zwanenburg, A. S. Dzurak

Abstract: We report charge sensing measurements of a silicon metal-oxide-semiconductor quantum dot using a single-electron transistor as a charge sensor with dynamic feedback control. Using digitallycontrolled feedback, the sensor exhibits sensitive and robust detection of the charge state of the quantum dot, even in the presence of charge drifts and random charge rearrangements. The sensor enables the occu… ▽ More We report charge sensing measurements of a silicon metal-oxide-semiconductor quantum dot using a single-electron transistor as a charge sensor with dynamic feedback control. Using digitallycontrolled feedback, the sensor exhibits sensitive and robust detection of the charge state of the quantum dot, even in the presence of charge drifts and random charge rearrangements. The sensor enables the occupancy of the quantum dot to be probed down to the single electron level. △ Less

Submitted 8 July, 2011; originally announced July 2011.

Journal ref: AIP Advances 1, 042111 (2011)

Spin filling of valley-orbit states in a silicon quantum dot

Authors: W. H. Lim, C. H. Yang, F. A. Zwanenburg, A. S. Dzurak

Abstract: We report the demonstration of a low-disorder silicon metal-oxide-semiconductor (Si MOS) quantum dot containing a tunable number of electrons from zero to N=27. The observed evolution of addition energies with parallel magnetic field reveals the spin filling of electrons into valley-orbit states. We find a splitting of 0.10 meV between the ground and first excited states, consistent with theory an… ▽ More We report the demonstration of a low-disorder silicon metal-oxide-semiconductor (Si MOS) quantum dot containing a tunable number of electrons from zero to N=27. The observed evolution of addition energies with parallel magnetic field reveals the spin filling of electrons into valley-orbit states. We find a splitting of 0.10 meV between the ground and first excited states, consistent with theory and placing a lower bound on the valley splitting. Our results provide optimism for the realization in the near future of spin qubits based on silicon quantum dots. △ Less

Submitted 7 July, 2011; v1 submitted 15 March, 2011; originally announced March 2011.

Comments: 6 pages, 4 figures, to appear in Nanotechnology

Journal ref: Nanotechnology 22, 335704 (2011)

Pauli Spin Blockade in a Highly Tunable Silicon Double Quantum Dot

Authors: N. S. Lai, W. H. Lim, C. H. Yang, F. A. Zwanenburg, W. A. Coish, F. Qassemi, A. Morello, A. S. Dzurak

Abstract: Double quantum dots are convenient solid-state platforms to encode quantum information. Two-electron spin states can be conveniently detected and manipulated using strong quantum selection rules based on the Pauli exclusion principle, leading to the well-know Pauli spin blockade of electron transport for triplet states. Coherent spin states would be optimally preserved in an environment free of nu… ▽ More Double quantum dots are convenient solid-state platforms to encode quantum information. Two-electron spin states can be conveniently detected and manipulated using strong quantum selection rules based on the Pauli exclusion principle, leading to the well-know Pauli spin blockade of electron transport for triplet states. Coherent spin states would be optimally preserved in an environment free of nuclear spins, which is achievable in silicon by isotopic purification. Here we report on a deliberately engineered, gate-defined silicon metal-oxide-semiconductor double quantum dot system. The electron occupancy of each dot and the inter-dot tunnel coupling are independently tunable by electrostatic gates. At weak inter-dot coupling we clearly observe Pauli spin blockade and measure a large intra-dot singlet-triplet splitting $>$ 1 meV. The leakage current in spin blockade has a peculiar magnetic field dependence, unrelated to electron-nuclear effects and consistent with the effect of spin-flip cotunneling processes. The results obtained here provide excellent prospects for realizing singlet-triplet qubits in silicon. △ Less

Submitted 14 April, 2011; v1 submitted 7 December, 2010; originally announced December 2010.

Comments: 6 pages, 5 figures

Journal ref: Scientific Reports 1, Article number: 110 (2011)

Single-shot readout of an electron spin in silicon

Authors: Andrea Morello, Jarryd J. Pla, Floris A. Zwanenburg, Kok W. Chan, Hans Huebl, Mikko Mottonen, Christopher D. Nugroho, Changyi Yang, Jessica A. van Donkelaar, Andrew D. C. Alves, David N. Jamieson, Christopher C. Escott, Lloyd C. L. Hollenberg, Robert G. Clark, Andrew S. Dzurak

Abstract: The size of silicon transistors used in microelectronic devices is shrinking to the level where quantum effects become important. While this presents a significant challenge for the further scaling of microprocessors, it provides the potential for radical innovations in the form of spin-based quantum computers and spintronic devices. An electron spin in Si can represent a well-isolated quantum bit… ▽ More The size of silicon transistors used in microelectronic devices is shrinking to the level where quantum effects become important. While this presents a significant challenge for the further scaling of microprocessors, it provides the potential for radical innovations in the form of spin-based quantum computers and spintronic devices. An electron spin in Si can represent a well-isolated quantum bit with long coherence times because of the weak spin-orbit coupling and the possibility to eliminate nuclear spins from the bulk crystal. However, the control of single electrons in Si has proved challenging, and has so far hindered the observation and manipulation of a single spin. Here we report the first demonstration of single-shot, time-resolved readout of an electron spin in Si. This has been performed in a device consisting of implanted phosphorus donors coupled to a metal-oxide-semiconductor single-electron transistor - compatible with current microelectronic technology. We observed a spin lifetime approaching 1 second at magnetic fields below 2 T, and achieved spin readout fidelity better than 90%. High-fidelity single-shot spin readout in Si opens the path to the development of a new generation of quantum computing and spintronic devices, built using the most important material in the semiconductor industry. △ Less

Submitted 24 May, 2010; v1 submitted 13 March, 2010; originally announced March 2010.

Comments: 5 pages, 4 figures

Journal ref: Nature 467, 687 (2010)

Resonant tunnelling features in the transport spectroscopy of quantum dots

Authors: C. C. Escott, F. A. Zwanenburg, A. Morello

Abstract: We present a review of features due to resonant tunnelling in transport spectroscopy experiments on quantum dots and single donors. The review covers features attributable to intrinsic properties of the dot as well as extrinsic effects, with a focus on the most common operating conditions. We describe several phenomena that can lead to apparently identical signatures in a bias spectroscopy measu… ▽ More We present a review of features due to resonant tunnelling in transport spectroscopy experiments on quantum dots and single donors. The review covers features attributable to intrinsic properties of the dot as well as extrinsic effects, with a focus on the most common operating conditions. We describe several phenomena that can lead to apparently identical signatures in a bias spectroscopy measurement, with the aim of providing experimental methods to distinguish between their different physical origins. The correct classification of the resonant tunnelling features is an essential requirement to understand the details of the confining potential or predict the performance of the dot for quantum information processing. △ Less

Submitted 10 February, 2010; originally announced February 2010.

Comments: 18 pages, 7 figures. Short review article submitted to Nanotechnology, special issue on 'Quantum Science and Technology at the Nanoscale'

Journal ref: Nanotechnology 21, 274018 (2010)

Probe and Control of the Reservoir Density of States in Single-Electron Devices

Authors: M. Mottonen, K. Y. Tan, K. W. Chan, F. A. Zwanenburg, W. H. Lim, C. C. Escott, J. -M. Pirkkalainen, A. Morello, C. Yang, J. A. van Donkelaar, A. D. C. Alves, D. N. Jamieson, L. C. L. Hollenberg, A. S. Dzurak

Abstract: We present a systematic study of quasi-one-dimensional density of states (DOS) in electron accumulation layers near a Si-SiO2 interface. In the experiments we have employed two conceptually different objects to probe DOS, namely, a phosphorus donor and a quantum dot, both operating in the single-electron tunneling regime. We demonstrate how the peaks in DOS can be moved in the transport window i… ▽ More We present a systematic study of quasi-one-dimensional density of states (DOS) in electron accumulation layers near a Si-SiO2 interface. In the experiments we have employed two conceptually different objects to probe DOS, namely, a phosphorus donor and a quantum dot, both operating in the single-electron tunneling regime. We demonstrate how the peaks in DOS can be moved in the transport window independently of the other device properties, and in agreement with the theoretical analysis. This method introduces a fast and convenient way of identifying excited states in these emerging nanostructures. △ Less

Submitted 5 October, 2009; originally announced October 2009.

Comments: 4 pages, 4 figures

Journal ref: Phys. Rev. B 81, 161304 (2010)

Observation of the single-electron regime in a highly tunable silicon quantum dot

Authors: W. H. Lim, F. A. Zwanenburg, H. Huebl, M. Mottonen, K. W. Chan, A. Morello, A. S. Dzurak

Abstract: We report on low-temperature electronic transport measurements of a silicon metal-oxide-semiconductor quantum dot, with independent gate control of electron densities in the leads and the quantum dot island. This architecture allows the dot energy levels to be probed without affecting the electron density in the leads, and vice versa. Appropriate gate biasing enables the dot occupancy to be redu… ▽ More We report on low-temperature electronic transport measurements of a silicon metal-oxide-semiconductor quantum dot, with independent gate control of electron densities in the leads and the quantum dot island. This architecture allows the dot energy levels to be probed without affecting the electron density in the leads, and vice versa. Appropriate gate biasing enables the dot occupancy to be reduced to the single-electron level, as evidenced by magnetospectroscopy measurements of the ground state of the first two charge transitions. Independent gate control of the electron reservoirs also enables discrimination between excited states of the dot and density of states modulations in the leads. △ Less

Submitted 10 November, 2009; v1 submitted 3 October, 2009; originally announced October 2009.

Comments: 4 pages, 3 figures, accepted for Applied Physics Letters

Journal ref: Appl. Phys. Lett. 95, 242102 (2009) (3 pages)

Spin states of the first four holes in a silicon nanowire quantum dot

Authors: F. A. Zwanenburg, C. E. W. M. van Rijmenam, Y. Fang, C. M. Lieber, L. P. Kouwenhoven

Abstract: We report measurements on a silicon nanowire quantum dot with a clarity that allows for a complete understanding of the spin states of the first four holes. First, we show control of the hole number down to one. Detailed measurements at perpendicular magnetic fields reveal the Zeeman splitting of a single hole in silicon. We are able to determine the ground-state spin configuration for one to fo… ▽ More We report measurements on a silicon nanowire quantum dot with a clarity that allows for a complete understanding of the spin states of the first four holes. First, we show control of the hole number down to one. Detailed measurements at perpendicular magnetic fields reveal the Zeeman splitting of a single hole in silicon. We are able to determine the ground-state spin configuration for one to four holes occupying the quantum dot and find a spin filling with alternating spin-down and spin-up holes, which is confirmed by magnetospectroscopy up to 9T. Additionally, a so far inexplicable feature in single-charge quantum dots in many materials systems is analyzed in detail. We observe excitations of the zero-hole ground-state energy of the quantum dot, which cannot correspond to electronic or Zeeman states. We show that the most likely explanation is acoustic phonon emission to a cavity between the two contacts to the nanowire. △ Less

Submitted 18 November, 2008; originally announced November 2008.

Comments: 24 pages, 8 figures, both including supporting information

Journal ref: Nano Lett. 9, 1071 (2009)

Imaging Electrical Conduction through InAs Nanowires

Authors: Ania C. Bleszynski, Floris A. Zwanenburg, Robert M. Westervelt, Aaroud L. Roest, Erik P. A. M. Bakkers, Leo P. Kouwenhoven

Abstract: We show how a scanning probe microscope (SPM) can be used to image electron flow through InAs nanowires, elucidating the physics of nanowire devices on a local scale. A charged SPM tip is used as a movable gate. Images of nanowire conductance vs. tip position spatially map the conductance of InAs nanowires at liquid He temperatures. Plots of conductance vs. back gate voltage without the tip pres… ▽ More We show how a scanning probe microscope (SPM) can be used to image electron flow through InAs nanowires, elucidating the physics of nanowire devices on a local scale. A charged SPM tip is used as a movable gate. Images of nanowire conductance vs. tip position spatially map the conductance of InAs nanowires at liquid He temperatures. Plots of conductance vs. back gate voltage without the tip present show complex patterns of Coulomb-blockade peaks. Images of nanowire conductance identify multiple quantum dots located along the nanowire - each dot is surrounded by a series of concentric rings corresponding to Coulomb blockade peaks. An image locates the dots and provides information about their size. The rings around individual dots interfere with each other like Coulomb blockade peaks of multiple quantum dots in series. In this way, the SPM tip can probe complex multi-dot systems by tuning the charge state of individual dots. The nanowires were grown from metal catalyst particles and have diameters ~ 80 nm and lengths 2 to 3 um. △ Less

Submitted 18 October, 2006; originally announced October 2006.

Comments: 15 pages containing 5 figures