NCP6922C ONSemiconductor
NCP6922C ONSemiconductor
NCP6922C ONSemiconductor
4 Channels PMIC,
2 x DC-to-DC Converters,
2 x LDOs
The NCP6922C integrated circuit is part of the ON Semiconductor
mini power management IC family (PMIC). It is optimized to supply
http://onsemi.com
battery powered portable application sub−systems such as camera
function, microprocessors. This device integrates 2 high efficiency
800 mA Step−down DC−to−DC converters with DVS (Dynamic MARKING
Voltage Scale) and 2 low dropout (LDO) voltage regulators in a DIAGRAM
4x4 mm WQFN package.
Features xxxxxx
ALYW
• 2 DC−to−DC Converters (3 MHz, 1 mH / 10 mF, 800 mA) WQFN20
G
CASE 510AV
♦ Peak Efficiency 95%
♦ Programmable Output Voltage from 0.6 V to 3.3 V by 12.5 mV xxxxxx = 22CB2: NCP6922CB prototype
Steps = 22CC2: NCP6922CC prototype
= 6922CB: NCP6922CB
• 2 Low Noise − Low Drop Out Regulators (2.2 mF, 150 mA) = 6922CC: NCP6922CC
♦ Programmable Output Voltage from 1.0 V to 3.3 V by 50 mV Steps = 6922CD: NCP6922CD
♦ 50 mVrms Typical Low Output Noise A = Assembly Location
L = Wafer Lot
• Control
Y = Year
♦ 400 kHz / 3.4 MHz I2C Compatible W = Work Week
♦ Independent Enable Pins, I2C Enable Control Bits G = Pb−Free Package
♦ Power Good Output Pin (Pb−Free indicator, “G” or microdot “ G”,
♦ Customizable Power Up Sequence may or may not be present.)
• Extended Input Voltage Range from 2.3 V to 5.5 V
• 82 mA Low Quiescent Current at No Load PIN OUT
• Less than 7 mA Sleep Mode Current
VOUT3
• Footprint: 4.0 x 4.0 mm WQFN 0.5 mm Pitch
SW2
SDA
SCL
FB2
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant 20
Typical Applications 1
PGND2 VIN3
• Cellular Phones, Tablets PVIN2 21 VIN4
• Digital Cameras ENDCDC2 AGND
(Thermal Pad)
VOUT4
PVIN1 ENLDO3
PGND1 ENLDO4
System Supply
5.0 V NCP6922C 4.7 mF
AVIN 10 4 PVIN1 System Supply
1.0 mF 5.0 V
ENDCDC1
FB1
SW1
PG
Core
AVIN
AVIN
THERMAL
SHUTDOWN
PVIN1
SCL SERIAL DC to DC 1
SW1
SDA INTERFACE 800 mA
STEP−DOWN FB1
CONVERTER
PGND1
ENDCDC1
PVIN2
ENDCDC2 DC to DC 2
SW2
ENLDO3 CONTROL
800 mA
STEP−DOWN FB2
ENLDO4
CONVERTER
PGND2
PG
VIN3
LDO3
VOUT3
150 mA LDO
UVLO
VREF
OSC VIN4
LDO4
VOUT4
150 mA LDO
AGND
http://onsemi.com
2
NCP6922C
VOUT3
SW2
SDA
SCL
FB2
20
1
PGND2 VIN3
PVIN2 21 VIN4
ENDCDC2 AGND VOUT4
(Thermal Pad)
PVIN1 ENLDO3
PGND1 ENLDO4
ENDCDC1
SW1
AVIN
FB1
PG
Figure 3. Pin Out (Top View)
http://onsemi.com
3
NCP6922C
http://onsemi.com
4
NCP6922C
Table 4. ELECTRICAL CHARACTERISTICS (Min and Max limits apply for TA = −40°C to +85°C, AVIN = PVIN1 = PVIN2 = VIN3 =
VIN4 = 5.0 V and default configuration, unless otherwise specified. Typical values are referenced to TA = + 25°C, AVIN = PVIN1 = PVIN2 =
VIN3 = VIN4 = 5.0 V and default configuration) (Note 9).
Symbol Parameter Conditions Min Typ Max Unit
SUPPLY CURRENT: PINS AVIN – PVIN1 – PVIN2
IQ Operating Quiescent Current DCDCs & LDO4 Off − 17 30 mA
LDO3 on – no load
DCDC1 on – no load – PFM − 36 70
DCDC2 & LDOs off
DCDCs on – no load – PFM − 82 150
LDOs on – no load
ISLEEP Sleep Mode Current All DCDC and LDOs off − 7 15 mA
DCDC1&2 STEP DOWN CONVERTERS
PVIN1,2 Input Voltage Range VOUT ≤ 2.1 V (Note 11) 2.3 5.0 5.5 V
VOUT > 2.1 V VOUT+0.2V 5.0 5.5
IOUTMAX Maximum Output Current 0.8 − − A
DVOUT Output Voltage DC Error Forced PWM mode, VIN range, −1 − 1 %
IOUT from 0 mA and 100 mA
Forced PWM mode, VIN range, −1 − 1
IOUT up to IOUTMAX (Note 10)
Auto mode, VIN range, −1 − 2
IOUT up to IOUTMAX (Note 10)
FSW Switching Frequency Forced PWM 2.7 3 3.3 MHz
RONHS P−Channel MOSFET From PVIN1 / PVIN2 pins to SW1 / − 270 400 mW
On Resistance SW2 pins
RONLS N−Channel MOSFET From SW1 / SW2 pins to PGND1 / − 190 300 mW
On Resistance PGND2 pins
IPK Peak Inductor Current Open loop 1.0 1.3 1.6 A
DCLOAD Load Regulation IOUT from 100 mA to IOUTMAX − 5 − mV/A
DCLINE Line Regulation PVIN = PVINMIN to 5.0 V, IOUT = 100 mA − 0.5 − %
D Maximum Duty Cycle − 100 − %
tSTART Soft−Start Time Time from I2C command ACK to 90% of − − 0.6 ms
Output Voltage
RDISDCDC DCDC Active Output − 7 − W
Discharge
LDO3 and LDO4
VIN3, VIN4 LDO3 and LDO4 Input Voltage VOUT <= 1.5 V, IOUT = 150 mA 1.7 − 5.5 V
VOUT > 1.5 V, IOUT = 150 mA Vout+VDROP − 5.5 V
IOUT Maximum Output Current 150 − − mA
ISC Short Circuit Protection VIN = 3.6 V − 70 − mA
(foldback)
ILIMIT Current Limit VIN = 3.6 V 200 − 500
ΔVOUT Output Voltage Accuracy IOUT = 75 mA −1 VNOM +1 %
VIN range, IOUT = 0 mA and 150 mA −2 VNOM +2
(Note 10)
DCLOAD Load Regulation IOUT = 0 mA to 150 mA − 0.5 − %
DCLINE Line Regulation VIN = VINMIN to 5.5 V, IOUT = 150 mA − 0.5 − %
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
8. Devices that use non−standard supply voltages which do not conform to the intent I2C bus system levels must relate their input levels to
the VDD voltage to which the pull−up resistors RP are connected.
9. Refer to the Application Information section of this data sheet for more details.
10. Guaranteed by design and characterized.
11. Operation above 5.5 V input voltage for extended periods may affect device reliability.
http://onsemi.com
5
NCP6922C
Table 4. ELECTRICAL CHARACTERISTICS (Min and Max limits apply for TA = −40°C to +85°C, AVIN = PVIN1 = PVIN2 = VIN3 =
VIN4 = 5.0 V and default configuration, unless otherwise specified. Typical values are referenced to TA = + 25°C, AVIN = PVIN1 = PVIN2 =
VIN3 = VIN4 = 5.0 V and default configuration) (Note 9).
Symbol Parameter Conditions Min Typ Max Unit
LDO3 and LDO4
VDROP Dropout Voltage VOUT = VNOM − 2%, IOUT = 150 mA − 95 180 mV
VOUT = 1.15 V, IOUT = 150 mA 550 − mV
(Driven by VINMIN)
PSRR Ripple Rejection F = 1 kHz, − −65 − dB
IOUT 75% max load, VOUT=1.8 V
F = 10 kHz − −55 −
IOUT 75% max load, VOUT=1.8 V
Noise 10 Hz ³ 100 kHz, VOUT3,4 = 1.8 V − 55 − mV
RDISLDO3,4 LDO Active Output Discharge − 20 − W
ENx
VIH High input voltage 1.1 − − V
VIL Low input voltage − − 0.4 V
tEN Enable Filter Enable pins rising / falling (Note 10) 4 − 18 ms
IPD Enable Pins Pull−Down (input − 0.1 1.0 uA
bias current)
POWER GOOD
VPGL Power Good Low Threshold Falling edge as a percentage of nominal 86 90 of 95 %
output voltage VNOM
VPGHYS Power Good detection level 0.2 3 5 %
tRT Power Good Reaction Time Falling (Note 10) − 3 − ms
Rising (Note 10) 3 − 14
VPGL Power Good low output voltage IPG = 5 mA − − 0.2 V
PGLK Power Good leakage current 3.6V at PG pin when power good valid − − 100 nA
VPGH Power Good high output volt- Open drain − − 5.5 V
age
I2C
VI2CINT High level at SCL/SDA line − − 5.5 V
VI2CIL SCL, SDA low input voltage SCL, SDA pin (Note 9 and 10) − − 0.5 V
VI2CIH SCL, SDA high input voltage SCL, SDA pin (Note 9 and 10) 0.8xVI2CINT − − V
VI2COL SCL, SDA low output voltage ISINK = 3 mA (Note10) − − 0.4 V
FSCL I2C clock frequency (Note 10) − − 3.4 MHz
TOTAL DEVICE
VUVLO Under Voltage Lockout VIN falling − − 2.3 V
VUVLOH Under Voltage Lockout VIN rising 60 − 200 mV
Hysteresis
TSD Thermal Shut Down Protection 150 °C
TWARNING Warning Rising Edge 135 °C
TSDHYS Thermal Shut Down Hysteresis 35 °C
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
8. Devices that use non−standard supply voltages which do not conform to the intent I2C bus system levels must relate their input levels to
the VDD voltage to which the pull−up resistors RP are connected.
9. Refer to the Application Information section of this data sheet for more details.
10. Guaranteed by design and characterized.
11. Operation above 5.5 V input voltage for extended periods may affect device reliability.
http://onsemi.com
6
NCP6922C
TYPICAL CHARACTERISTICS
(AVIN = PVIN1 = PVIN2 = VIN3 = VIN4 = 5.0 V (Unless otherwise noted). TA = +25_C, DCDC1 = 1.20 V, DCDC2 = 3.30 V, LDO3 = 1.15 V
LDO4 = 2.5 V, CLDO = 2.2 mF 0603, LDCDC = 1.0 mF (SPM3012−1R0M) * CDCDC = 10 mF 0603)
Figure 4. Efficiency vs ILOAD and VIN VOUT = Figure 5. Efficiency vs ILOAD and Temperature
3.30 V, SPM6530 Inductor VOUT = 3.30 V, SPM6530 Inductor
Figure 6. Efficiency vs ILOAD and VIN VOUT = Figure 7. Efficiency vs ILOAD and Temperature
1.20 V, SPM6530 Inductor VOUT = 1.20 V, SPM6530 Inductor
Figure 8. Efficiency vs ILOAD and VIN VOUT = Figure 9. Efficiency vs ILOAD and Temperature
0.60 V, SPM6530 Inductor VOUT = 0.60 V, SPM6530 Inductor
http://onsemi.com
7
NCP6922C
TYPICAL CHARACTERISTICS
(AVIN = PVIN1 = PVIN2 = VIN3 = VIN4 = 5.0 V (Unless otherwise noted). TA = +25_C, DCDC1 = 1.20 V, DCDC2 = 3.30 V, LDO3 = 1.15 V
LDO4 = 2.5 V, CLDO = 2.2 mF 0603, LDCDC = 1.0 mF (SPM3012−1R0M) * CDCDC = 10 mF 0603)
Figure 10. Efficiency vs ILOAD and VIN DCDC1, Figure 11. Efficiency vs ILOAD and Temperature
VOUT = 1.20 V, SPM3012 Inductor DCDC1, VOUT = 1.20 V, SPM3012 Inductor
Figure 12. Efficiency vs ILOAD and VIN DCDC2 Figure 13. Efficiency vs ILOAD and Temperature
− VOUT = 1.20 V, SPM3012 Inductor DCDC2, VOUT = 1.20 V, SPM3012 Inductor
Figure 14. Efficiency vs ILOAD and VIN DCDC2 Figure 15. Efficiency vs ILOAD and Temperature
− VOUT = 3.30 V, SPM3012 Inductor DCDC2, VOUT = 3.30 V, SPM3012 Inductor
http://onsemi.com
8
NCP6922C
TYPICAL CHARACTERISTICS
(AVIN = PVIN1 = PVIN2 = VIN3 = VIN4 = 5.0 V (Unless otherwise noted). TA = +25_C, DCDC1 = 1.20 V, DCDC2 = 3.30 V, LDO3 = 1.15 V
LDO4 = 2.5 V, CLDO = 2.2 mF 0603, LDCDC = 1.0 mF (SPM3012−1R0M) * CDCDC = 10 mF 0603)
Figure 16. VOUT accuracy (mV) vs ILOAD and Figure 17. VOUT accuracy (%) vs ILOAD and
VIN DCDC1, VOUT = 1.20 V Temperature DCDC1, VOUT = 1.20 V
Figure 18. VOUT accuracy (mV) vs ILOAD and Figure 19. VOUT accuracy (%) vs ILOAD and
VIN DCDC2, VOUT = 1.20 V Temperature DCDC1, VOUT = 1.20 V
Figure 20. VOUT accuracy (mV) vs ILOAD and Figure 21. VOUT accuracy (%) vs ILOAD and
VIN DCDC2, VOUT = 3.30 V Temperature DCDC2, VOUT = 3.30 V
http://onsemi.com
9
NCP6922C
TYPICAL CHARACTERISTICS
(AVIN = PVIN1 = PVIN2 = VIN3 = VIN4 = 5.0 V (Unless otherwise noted). TA = +25_C, DCDC1 = 1.20 V, DCDC2 = 3.30 V, LDO3 = 1.15 V
LDO4 = 2.5 V, CLDO = 2.2 mF 0603, LDCDC = 1.0 mF (SPM3012−1R0M) * CDCDC = 10 mF 0603)
Figure 22. DCDC1 HSS RON vs VIN and Figure 23. DCDC1 LSS RON vs VIN and
Temperature Temperature
Figure 24. DCDC2 HSS RON vs VIN and Figure 25. DCDC2 LSS RON vs VIN and
Temperature Temperature
Figure 26. DCDC1 Switchover Point VOUT = Figure 27. DCDC2 Switchover Point VOUT =
1.20V 3.30V
http://onsemi.com
10
NCP6922C
TYPICAL CHARACTERISTICS
(AVIN = PVIN1 = PVIN2 = VIN3 = VIN4 = 5.0 V (Unless otherwise noted). TA = +25_C, DCDC1 = 1.20 V, DCDC2 = 3.30 V, LDO3 = 1.15 V
LDO4 = 2.5 V, CLDO = 2.2 mF 0603, LDCDC = 1.0 mF (SPM3012−1R0M) * CDCDC = 10 mF 0603)
Figure 28. ISLEEP vs VIN and Temperature Figure 29. IQ LDO3 vs VIN and Temperature
Figure 30. IQ PFM vs VIN and Temperature Figure 31. IQ PWM vs VIN and Temperature
http://onsemi.com
11
NCP6922C
TYPICAL CHARACTERISTICS
(AVIN = PVIN1 = PVIN2 = VIN3 = VIN4 = 5.0 V (Unless otherwise noted). TA = +25_C, DCDC1 = 1.20 V, DCDC2 = 3.30 V, LDO3 = 1.15 V
LDO4 = 2.5 V, CLDO = 2.2 mF 0603, LDCDC = 1.0 mF (SPM3012−1R0M) * CDCDC = 10 mF 0603)
Figure 33. VOUT accuracy (mV) vs ILOAD and Figure 34. VOUT accuracy (%) vs ILOAD and VIN
VIN LDO3, VOUT = 1.15 V LDO3, VOUT = 1.15 V
Figure 35. VOUT accuracy (mV) vs ILOAD and Figure 36. VOUT accuracy (%) vs ILOAD and VIN
VIN LDO3, VOUT = 2.50 V LDO3, VOUT = 2.50 V
Figure 37. VOUT accuracy (mV) vs ILOAD and Figure 38. VOUT accuracy (%) vs ILOAD and VIN
VIN LDO4, VOUT = 2.50 V LDO4, VOUT = 2.50 V
http://onsemi.com
12
NCP6922C
TYPICAL CHARACTERISTICS
(AVIN = PVIN1 = PVIN2 = VIN3 = VIN4 = 5.0 V (Unless otherwise noted). TA = +25_C, DCDC1 = 1.20 V, DCDC2 = 3.30 V, LDO3 = 1.15 V
LDO4 = 2.5 V, CLDO = 2.2 mF 0603, LDCDC = 1.0 mF (SPM3012−1R0M) * CDCDC = 10 mF 0603)
Figure 39. Load transient response DCDC1 Figure 40. Load transient response DCDC2
FPWM, VOUT = 1.20 V FPWM, VOUT = 1.20 V
Figure 41. Load transient response DCDC2 Figure 42. Load transient response LDO3,
FPWM, VOUT = 3.30 V VOUT = 1.35 V
Figure 43. Load transient response LDO3, Figure 44. Load transient response LDO4,
VOUT = 2.50 V VOUT = 2.50 V
http://onsemi.com
13
NCP6922C
TYPICAL CHARACTERISTICS
(AVIN = PVIN1 = PVIN2 = VIN3 = VIN4 = 5.0 V (Unless otherwise noted). TA = +25_C, DCDC1 = 1.20 V, DCDC2 = 3.30 V, LDO3 = 1.15 V
LDO4 = 2.5 V, CLDO = 2.2 mF 0603, LDCDC = 1.0 mF (SPM3012−1R0M) * CDCDC = 10 mF 0603)
Figure 45. Ripple voltage in PWM mode Figure 46. Ripple voltage in PWM mode
DCDC1, VOUT = 1.35 V, IOUT=200mA DCDC2, VOUT = 1.20 V, IOUT=200mA
Figure 47. Ripple voltage in PWM mode Figure 48. NCP6922CB Power−up Sequence
DCDC2, VOUT = 3.30 V, IOUT=200mA All Enable pins high
Figure 49. NCP6922CB power−up sequence Figure 50. NCP6922CB power−up sequence
ENLDO4 high first then others enable All ENx after the power up sequence
http://onsemi.com
14
NCP6922C
TYPICAL CHARACTERISTICS
(AVIN = PVIN1 = PVIN2 = VIN3 = VIN4 = 5.0 V (Unless otherwise noted). TA = +25_C, DCDC1 = 1.20 V, DCDC2 = 3.30 V, LDO3 = 1.15 V
LDO4 = 2.5 V, CLDO = 2.2 mF 0603, LDCDC = 1.0 mF (SPM3012−1R0M) * CDCDC = 10 mF 0603)
Figure 51. LDO3 PSRR IOUT = 100 mA Figure 52. LDO3 Noise VIN = 3.8 V, IOUT = 10 mA
Figure 53. LDO4 PSRR IOUT = 100 mA Figure 54. LDO3 vs LDO4 Noise VIN = 3.8 V,
VOUT = 1.8 V, IOUT = 10 mA
Figure 55. DCDC PSRR VIN = 3.8V, VOUT = Figure 56. LDO4 noise with or without DCDC2
1.2 V, IOUT = 200 mA LDO4 VOUT = 2.50 V, DCDC2 VOUT = 1.80 V
http://onsemi.com
15
NCP6922C
http://onsemi.com
16
NCP6922C
AVIN
ENx
Sequencer
(2 ms) Tstart T0 T1 T2 T3 T4 T5 T6 T7 T17
DVS ramp
Bias time
DCDC1 time
1.20 V 600 ms
Init time
DVS ramp time 160 ms
DCDC2
1.20 V
Init time t
160 ms
VOUT3
2.5 V Init time
50 ms
VOUT4
2.5 V Init time
50 ms
Reset
36 ms (18 x Tsequencer)
Figure 57. NCP6922CB Power Up Sequence with All ENx Pins High
http://onsemi.com
17
NCP6922C
AVIN
ENLDO4
Other
ENx
Sequencer Tstart T0 T1 T2 T3 T4 T5 T6 T7 T17
(2 ms)
Bias
DCDC1 time
1.20 V 600 ms
Init time
160 ms
DCDC2
1.20 V Init time
160 ms
VOUT3
2.5 V Init time
50 ms
VOUT4
2.5 V
Init time
50 ms
Reset
36 ms (18 x Tsequencer)
Figure 58. NCP6922CB Power−up Sequence with Only ENLDO4 High First then Others Enable
AVIN
ENx
Sequencer
(2 ms) Tstart T0 T1 T17
Bias time
DCDC1 600 ms
1.20 V Init time
160 ms
DCDC2
1.20 V Init time
160 ms
VOUT3
2.5 V Init time
50 ms
VOUT4
2.5 V Init time
50 ms
Reset
36 ms (18 x Tsequencer)
Figure 59. NCP6922CB Power−up Sequence with All ENx After the Power Up Sequence
I2C registers can be read and written while ENx pins are Note that each enable pin has a corresponding sense bit
low. By programming the appropriate registers (see registers reflecting the state of the pin: sense bit is 1 when pin is high
description section), the power up sequence can be (filtered) and 0 when the pin is low (filtered).
modified.
Reset to the factory default configuration can be achieved Shutdown
either by hardware reset (all power supplies removed) or by When shutting down the device (AVIN falls below the
writing through the I2C in the RESET register. Under Voltage threshold VUVLO), no shut down sequence
is applied. All supplies are disabled and outputs are
Enable Control discharged simultaneously, and PG open drain output is low.
http://onsemi.com
18
NCP6922C
When programming a higher voltage, the reference of the to change DCDCx Output Voltage from 1.2 V to 0.9 V, and
switcher and therefore the output is raised in equidistant be programmed to 0 to move back from 0.9 V to 1.2 V.
steps per defined time period such that the dV/dt is
controlled (by default 12.5 mV / 1.33 ms). When Table 11. VPROGDCDCX / VDVSDCDCX SETTINGS
programming a lower voltage the output voltage will FOR VDCDCX SWITCHING BETWEEN 1.2 V AND 0.9 V
decrease accordingly. The DVS step is fixed and the speed Register Name Values Target VDCDC (V)
is programmable. VPROGDCDCx 0$30 1.2
http://onsemi.com
19
NCP6922C
raised to the new setting as shown in Figure 63. The PG pin Moreover PGGATE_x bits of the PGOOD2 register force
state is an AND combination of assigned signals. the PG pin low when the channel is off.
PG
ENDCDC1
SEN_PG_DCDC1 PGGATE_DCDC1 OR
AND
PGASSIGN_DCDC1 OR
ENDCDC2
SEN_PG_DCDC2 PGGATE_DCDC2 OR
AND
PGASSIGN_DCDC2 OR
ENLDO3
SEN_PG_LDO3 PGGATE_LDO3 OR
AND
PGASSIGN_LDO3 OR
ENLDO4
SEN_PG_LDO4 PGGATE_LDO4 OR PG pin
AND AND
PGASSIGN_LDO4 OR
DCDC1_DVS
PGASSIGN_DVS1 OR
DCDC2_DVS
PGASSIGN_DVS2 OR
RESET
PGASSIGN_RST OR
ENDCDC1
in the TIME register. The default delay is 0 ms could be
change upon request
DCDC1
INTERNAL SIGNAL (RESULT
ENDCDC2 OF THE ASSIGNED INTERNAL PG)
DCDC2
PG PG No Delay
http://onsemi.com
20
NCP6922C
PG_DCDC1
INT_SEN1[0]
INT_ACK1[0]
I2C access on INT_ACK1 read read read read
Note that each enable pin has a corresponding sense bit Foldback also reduces power dissipation in the load in
reflecting the state of the pin, without interrupt associated. fault conditions, which can reduce the risks of fire and heat
damage.
LOW DROP OUT REGULATOR
The LDOs (low drop out regulator) are based on an
embedded PMOS and requires no external stability
components or feedback networks.
The low drop out regulators can be supplied from the
systems supply rail such as a battery or from a step down
convertor as available on the IC itself. The latter case
provides a power efficient line up when the voltage drop
allows such. When the output of the LDO gets out of
regulation, due to for instance a short at the output, an
interrupt is generated and optionally the LDO is
automatically disabled.
Current Limitation
Figure 68. 1.0 V LDO Foldback Current Limit Principe
Both LDOs have foldback current limiter: the goal of the
foldback current limit is to reduce the output voltage and the DC−to−DC STEP DOWN CONVERTERS
current in order to limit the power dissipation (see The DC−to−DC converters are synchronous rectifier type
Figure 68). Under a short circuit, where the output voltage with both high side and low side integrated switches. Neither
has reduced below ~30% nominal value, the current (ISC) is external transistor nor diodes are required for proper
typically limited to a small fraction of the maximum current operation. Feedback and compensation network are also
(ILIMIT). fully integrated.
http://onsemi.com
21
NCP6922C
The DC−to−DC converters can operate in two different P−MOSFET on−pulse with very small negative current
modes: PWM and PFM. The transition between PWM/PFM limit. When load increases and current in inductor becomes
modes can occur automatically or the switcher can be placed continuous again, the controller automatically turns back to
in forced PWM mode by I2C programming. (MODEDCDC1 PWM fixed frequency mode.
& MODEDCDC2 bits of ENABLE register)
Forced PWM
PWM (Pulse Width Modulation) Operating Mode The DC−to−DC converters can be programmed to only
In medium and high load conditions, DC−to−DCs operate use PWM and disable the transition to PFM.
in PWM mode from a fixed clock and adapts its duty cycle
to regulate the desired output voltage. In this mode, the Table 13. MODEDCDC1&2 BIT DESCRIPTION
inductor current is in CCM and the voltage is regulated by MODEDCDC1&2 Bit Description
PWM. The internal N−MOSFET switch operates as 0 Auto switching PFM / PWM
synchronous rectifier and is driven complementary to the
1 Forced PWM
P−MOSFET switch. In CCM, the lower switch
(N−MOSFET) in a synchronous converter provides a lower
voltage drop than the diode in an asynchronous converter, Inductor Peak Current Limitation
which provides less loss and higher efficiency. During normal operation, peak current limitation will
monitor and limit the current through the inductor. This
PFM (Pulse Frequency Modulation) Operating Mode current limitation is particularly useful when size and/or
In order to save power and improve efficiency at low loads height constrains inductor power
the DC−to−DC converters operate in PFM mode as the
inductor drops into DCM (Discontinuous Current Mode). Soft Start
The upper FET on time is kept constant and the switching A soft start is provided to limit inrush currents when
frequency is variable. Output voltage is regulated by varying enabling the converter. After enabling and internal delays
the switching frequency which becomes proportional to elapsed, the DC to DC converter output will gradually ramp
loading current. As it does in PWM mode, the internal up to the programmed voltage.
N−MOSFET operates as synchronous rectifier after each
http://onsemi.com
22
NCP6922C
START IC ADRESS 1 ACK DATA 1 ACK DATA n /ACK STOP READ OUT
FROM PART
1à READ
/ACK WRITE
START IC ADRESS 0 ACK DATA 1 ACK DATA n STOP INSIDE PART
ACK
If PART does not Acknolege, the /NACK will be followed by a STOP or Sr.
If PART Acknoleges, the ACK can be followed by another data or Stop or Sr
0à WRITE
Figure 69. General Protocol Description
The first byte transmitted is the Chip address (with LSB • In case of read operation, the NCP6922C will output
bit sets to 1 for a read operation, or sets to 0 for a Write the data out from the last register that has been accessed
operation). Then the following data will be: by the last write operation. Like writing process,
• In case of a Write operation, the register address reading process is an incremental process.
(@REG) we want to write in followed by the data we
will write in the chip. The writing process is incremental. Read Out from Part
So the first data will be written in @REG, the second The Master will first make a “Pseudo Write” transaction
one in @REG + 1... The data are optional. with no data to set the internal address register. Then, a stop
then start or a Repeated Start will initiate the read transaction
from the register address the initial write transaction has set:
0à WRITE
The first WRITE sequence will set the internal pointer on the register we want access to. Then the read transaction will start
at the address the write transaction has initiated.
http://onsemi.com
23
NCP6922C
n REGISTERS WRITE
0 à WRITE
Write In Part
Write operation will be achieved by only one transaction. After chip address, the MCU first data will be the internal register
we want access to, then following data will be the data we want to write in Reg, Reg + 1, Reg + 2, ...., Reg +n.
Write n Registers:
n REGISTERS WRITE
0 à WRITE
Figure 72. Write In n Registers
I2C Address
NCP6922C has fixed I2C (7 bit address, see below table A7~A1):
Add 0x14 −
NCP6922CCMTTXG W 0x30 0 0 1 1 0 0 0 R/W
R 0x31
Add 0x18 −
NCP6922CDMTTXG W 0x30 0 0 1 1 0 0 0 R/W
R 0x31
Add 0x18 −
http://onsemi.com
24
NCP6922C
Register Map
Following register map describes I2C registers.
Registers can be:
R Read only register
RC Read then Clear
RW Read and Write register
RWM Read, Write and can be modified by the IC
Reserved Address is reserved and register is not physically designed
Spare Address is reserved and register is physically designed
http://onsemi.com
25
NCP6922C
http://onsemi.com
26
NCP6922C
http://onsemi.com
27
NCP6922C
Registers Description
http://onsemi.com
28
NCP6922C
http://onsemi.com
29
NCP6922C
http://onsemi.com
30
NCP6922C
http://onsemi.com
31
NCP6922C
http://onsemi.com
32
NCP6922C
http://onsemi.com
33
NCP6922C
http://onsemi.com
34
NCP6922C
http://onsemi.com
35
NCP6922C
http://onsemi.com
36
NCP6922C
http://onsemi.com
37
NCP6922C
APPLICATION INFORMATION
Inductor Selection
NCP6922C DC−to−DC converters typically use 1 mH With:
inductor. Use of different values can be considered to • Fsw = Switching Frequency (Typical 3 MHz)
optimize operation in specific conditions. The inductor • L = Inductor value
parameters directly related to device performances are
• DIL = Peak−To−Peak inductor ripple current
saturation current, DC resistance and inductance value. The
inductor ripple current (DIL) decreases with higher • ILMAX = Maximum Inductor Current
inductance. To achieve better efficiency, ultra low DC resistance
inductor should be selected.
VO
1* The saturation current of the inductor should be higher
VIN than the ILMAX calculated with the Equations 1 and 2.
DI L + V O (eq. 1)
L F SW
DI L
I LMAX + I OMAX ) (eq. 2)
2
http://onsemi.com
38
NCP6922C
Output Capacitor Selection for DC−to−DC Converters The output ripple voltage in PWM mode can be estimated by:
Selecting the proper output capacitor is based on the V
O
desired output ripple voltage. Ceramic capacitors with low
ǒ Ǔ
1*V
IN 1
ESR values will have the lowest output ripple voltage and DV O + V O ) ESR
L F SW 2 p CO F SW
are strongly recommended. The output capacitor requires
either an X7R or X5R dielectric. (eq. 3)
Input Capacitor Selection for DCDC Converters The maximum RMS current occurs at 50% duty cycle
In PWM operating mode, the input current is pulsating with maximum output current, which is 1/2 of maximum
with large switching noise. Using an input bypass capacitor output current. A low profile ceramic capacitor of 4.7 mF
can reduce the peak current transients drawn from the input should be used for most of the cases. For effective bypass
supply source, thereby reducing switching noise results, the input capacitor should be placed as close as
significantly. possible to PVIN1 and PVIN2 pins.
Output Capacitor for LDOs the system is preferred. Input voltage of LDO, should
For stability reason, a typical 2.2 mF ceramic output always be higher than VOUT + VLDODROP (VDROP,
capacitor is suitable for LDOs. The LDO output capacitor LDO dropout voltage at maximum current).
should be placed as close as possible to the NCP6922C
output pin. Capacitor DC Bias Characteristics
Real capacitance of ceramic capacitor changes versus DC
Input Capacitor for LDOs voltage. Special care should be taken to DC bias effect in
NCP6922C LDOs do not require specific input capacitor. order to make sure that the real capacitor value is always
However, a typical 1 mF ceramic capacitor placed close to higher than the minimum allowable capacitor value
LDOs’ input is helpful for load transient. specified.
Power input of LDO can be connected to main power
supply. However, for optimum efficiency and lower
NCP6922C thermal dissipation, lowest voltage available in
http://onsemi.com
39
NCP6922C
ORDERING INFORMATION
Device Marking Comment Package Shipping†
NCP6922CBMTTXG 6922CB 2 x 800 mA DCDC WQFN – 4 x 4mm 3000 / Tape & Reel
2 x 150 mA LDO (Pb – Free)
I2C address 0010 100x
(See detailed description)
NCP6922CCMTTXG 6922CC 2 x 800 mA DCDC WQFN – 4 x 4mm 3000 / Tape & Reel
2 x 150 mA LDO (Pb – Free)
I2C address 0011 000x
(See detailed description)
NCP6922CDMTTXG 6922CD 2 x 800 mA DCDC WQFN – 4 x 4mm 3000 / Tape & Reel
2 x 150 mA LDO (Pb – Free)
I2C address 0011 000x
(See detailed description)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
40
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
ÇÇ
ÉÉ ÉÉ
ÇÇ
1. DIMENSIONING AND TOLERANCING PER ASME
EXPOSED Cu MOLD CMPD Y14.5M, 1994.
B 2. CONTROLLING DIMENSION: MILLIMETERS.
ÉÉ ÉÉ ÇÇ
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND 0.30 MM
ÉÉ
PIN ONE FROM THE TERMINAL TIP.
REFERENCE A1 4. COPLANARITY APPLIES TO THE EXPOSED PAD
AS WELL AS THE TERMINALS.
E DETAIL B
2X ALTERNATE MILLIMETERS
0.15 C CONSTRUCTIONS DIM MIN MAX
A 0.70 0.80
2X A1 0.00 0.05
A3 0.20 REF
0.15 C
TOP VIEW L L b 0.20 0.30
D 4.00 BSC
D2 2.60 2.80
DETAIL B (A3) L1 E 4.00 BSC
A E2 2.60 2.80
0.10 C e 0.50 BSC
K 0.20 REF
DETAIL A L 0.30 0.50
0.08 C ALTERNATE L1 0.00 0.15
CONSTRUCTIONS
NOTE 4 A1 C
SEATING
GENERIC
SIDE VIEW PLANE
MARKING DIAGRAM*
0.10 C A B 20
DETAIL A
D2 1
20X L XXXXXX
6
0.10 C A B XXXXXX
11
ALYWG
G
E2
1 XXXXXX= Specific Device Code
A = Assembly Location
20
K 20X b L = Wafer Lot
e 0.10 C A B Y = Year
W = Work Week
0.05 C NOTE 3
G = Pb−Free Package
BOTTOM VIEW
(Note: Microdot may be in either location)
SOLDERING FOOTPRINT* *This information is generic. Please refer to
4.30 device data sheet for actual part marking.
20X Pb−Free indicator, “G” or microdot “ G”,
0.60 may or may not be present.
2.80
2.80 4.30
PKG
OUTLINE
20X
0.35
0.50
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98AON56888E Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.