Compact Model

... for that taking selected ordering parameters as input is much efficient for modeling. ... Taleb-Bendiab, “Performance Evaluation for Self-Healing Distributed Services and Fault Detection Mechanisms,” Journal ... 4].M. Steinder and AS Sethi, “A Survey of Fault Localization Techniques ...

In recent years, high electron mobility transistors (HEMTs) have attracted much attention in high-speed and high-power applications. One of the most interesting properties of these devices is the formation of the two-dimensional electron gas (2-DEG) with a very high electron mobility at the hetero interface. AlGaAs/GaAs HEMTs have been and are promising candidates for high speed and mm-wave applications. GaN-based HEMTs have attracted much attention for application in high-frequency and high-power devices due to the large bandgap, high saturated electron velocity, and high breakdown electric field. Significant improvements in the fabrication and performance of high electron mobility transistors (HEMT) have stimulated a considerable interest in the modeling of such structures. In this paper, we review working principle and various structures of HEMT, also different analytical models available for HEMT.

Process variability has become a critical issue in scaled CMOS design. This article provides a comprehensive view on the predominant variation sources in sub-90-nm devices, their impact on device and circuit performance, and various modeling approaches for statistical circuit analysis.

Symmetry breaking is commonly found in self-organized collective decision making. It serves an important functional role, specifically in biological and bio-inspired systems. The analysis of symmetry breaking is thus an important key to understanding self-organized decision making. However, in many systems of practical importance avail-able analytic methods cannot be applied due to the complexity of the scenario and consequentially the model. This applies specifically to self-organization in bio-inspired engineering. We propose a new modelling approach which allows us to formally analyze important properties of such processes. The core idea of our approach is to infer a compact model based on stochastic processes for a one-dimensional symmetry parameter. This enables us to analyze the fundamental properties of even complex collective decision making processes via Fokker–Planck theory. We are able to quantitatively address the effectiveness of symmetry breaking, the stability, the time taken to reach a consensus, and other parameters. This is demonstrated with two examples from swarm robotics

The calculation of Hamiltonian Circuits is an NP-complete task. This paper uses slightly modified complete sets of Hamiltonian circuits for the classification of documents. The known solution method is based on a SAT-instance with a huge number of clauses which is flattening the knowledge about the problem. We suggest an even more compact model of Boolean equations that preserves the

The semiconductor industry has scaled the MOSFET over the last decade using electrostatic scaling rules[1]. Manufacturing capabilities have made it feasible to scale the device structures to be shorter by advancing lithography, thinner dielectrics using more precise process ...

This paper presents an algorithm, based on the fixed point iteration, to solve for sizes and biases using transistor compact models such as BSIM3v3, BSIM4, PSP and EKV. The proposed algorithm simplifies the implementation of sizing and biasing operators. Sizing and biasing operators were originally proposed in the hierarchical sizing and biasing methodology. They allow to compute transistors sizes and biases based on transistor compact models while respecting designer's hypotheses. Computed sizes and biases are accurate, and guarantee the correct electrical behavior as expected by the designer. Sizing and biasing operators interface with a Spice-like simulator, allowing possible use of all available compact models for circuit sizing and biasing over different technologies. To illustrate the effectiveness of the proposed algorithm, a folded cascode OTA was efficiently sized with a 130 nm process, then was migrated to a 65 nm technology. Both sizing and migration were performed in...

A continuous compact model for the drain current, including short-channel effects and carrier quantization in Double-Gate MOSFET is developed. The model is particularly well-adapted to ultra-scaled devices, with short channel lengths and ultra-thin silicon films. An extensive comparison step with 2D quantum numerical results fully validates the model. The model is also shown to reproduce with an excellent accuracy experimental

Nanotransistors typically operate in far-from-equilibrium (FFE) conditions, that cannot be described neither by drift-diffusion, nor by purely ballistic models. In carbonbased nanotransistors, source and drain contacts are often characterized by the formation of Schottky Barriers (SBs), with strong influence on transport. Here we present a model for onedimensional field-effect transistors (FETs), taking into account on equal footing both SB contacts and FFE transport regime. Intermediate transport is introduced within the Buttiker probe approach to dissipative transport, in which a non-ballistic transistor is seen as a suitable series of individually ballistic channels. Our model permits the study of the interplay of SBs and ambipolar FFE transport, and in particular of the transition between SB-limited and dissipation-limited transport.