V60DM100C

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Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.40 V at IF = 5.0 A
FEATURES
® ®
TMBS eSMP Series • Trench MOS Schottky technology Available

SMPD (TO-263AC) • Very low profile - typical height of 1.7 mm

• Ideal for automated placement
K • Low forward voltage drop, low power losses
• High efficiency operation
1 • Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
2
Top View Bottom View • AEC-Q101 qualified available:
- Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance
V60DM100C
please see www.vishay.com/doc?99912
PIN 1 K

PIN 2 HEATSINK TYPICAL APPLICATIONS

For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection in commercial, industrial, and
PRIMARY CHARACTERISTICS
automotive application.
IF(AV) 2 x 30 A
VRRM 100 V
MECHANICAL DATA
IFSM 320 A Case: SMPD (TO-263AC)
VF at IF = 30 A (TA = 125 °C) 0.70 V Molding compound meets UL 94 V-0 flammability rating
TJ max. 175 °C Base P/N-M3 - halogen-free, RoHS-compliant
Base P/NHM3 - halogen-free, RoHS-compliant, and
Package SMPD (TO-263AC)
AEC-Q101 qualified
Diode variations Common cathode
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 and HM3 suffix meet JESD 201 class 2 whisker test
Polarity: as marked

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL V60DM100C UNIT
Device marking code V60DM100C
Maximum repetitive peak reverse voltage VRRM 100 V

Maximum average forward rectified current per device 60

IF(AV) (1) A
(fig. 1) per diode 30
Peak forward surge current 8.3 ms single half sine-wave
IFSM 320 A
superimposed on rated load
Operating junction temperature range TJ (2) -40 to +175
°C
Storage temperature range TSTG -55 to +175

Notes
(1) Mounted on infinite heatsink
(2) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R
D J JA

Revision: 28-Nov-17 1 Document Number: 87578

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Vishay General Semiconductor

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
IF = 5 A 0.49 -
IF = 15 A TA = 25 °C 0.63 -
IF = 30 A 0.79 0.86
Instantaneous forward voltage per diode VF (1) V
IF = 5 A 0.40 -
IF = 15 A TA = 125 °C 0.57 -
IF = 30 A 0.70 0.78
TA = 25 °C 0.01 -
VR = 70 V
TA = 125 °C 5 -
Reverse current at rated VR per diode IR (2) mA
TA = 25 °C - 0.8
VR = 100 V
TA = 125 °C 9 25
Typical junction capacitance 4.0 V, 1 MHz CJ 2400 - pF
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width  5 ms

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL V60DM100C UNIT
RJC(1) 0.8
Typical thermal resistance per device °C/W
RJA (2)(3) 50
Notes
(1) Mounted on infinite heatsink
(2) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R
D J JA - junction-to-ambient
(3) Free air, without heatsink

ORDERING INFORMATION (Example)

PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
V60DM100C-M3/I 0.55 I 2000/reel 13" diameter plastic tape and reel
V60DM100CHM3/I (1) 0.55 I 2000/reel 13" diameter plastic tape and reel
Note
(1) AEC-Q101 qualified

Revision: 28-Nov-17 2 Document Number: 87578

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 V60DM100C
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Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)

70 1000
Average Forward Rectified Current (A)

Instantaneous Reverse Current (mA)

RthJC = 0.8 °C/W TJ = 175 °C
60 100

10
50
1
40 TJ = 100 °C TJ = 150 °C
TJ = 125 °C
0.1
30
0.01
20 TJ = 25 °C
0.001
RthJA = 50 °C/W
10 0.0001
TJ = -40 °C
0 0.00001
0 25 50 75 100 125 150 175 10 20 30 40 50 60 70 80 90 100

Case Temperature (°C) Percent of Rated Peak Reverse Voltage (%)

Fig. 1 - Maximum Forward Current Derating Curve Fig. 4 - Typical Reverse Leakage Characteristics

30 10 000
D = 0.8 TJ = 25 °C
f = 1.0 MHz
25
Junction Capacitance (pF)
Average Power Loss (W)

Vsig = 50 mVp-p
D = 0.5
20 1000
D = 1.0
D = 0.3
15
D = 0.2
10 T
100
D = 0.1
5
D = tp/T tp

0 10
0 5 10 15 20 25 30 35 0.1 1 10 100

Average Forward Current (A) Reverse Voltage (V)

Fig. 2 - Average Power Loss Characteristics Fig. 5 - Typical Junction Capacitance

100 100
Transient Thermal Impedance (°C/W)

Junction-to-ambient
Instantaneous Forward Current (A)

TJ = 175 °C

10
TJ = 150 °C
10

1 TJ = 125 °C

TJ = 100 °C
1
0.1 TJ = 25 °C

TJ = -40 °C
0.01 0.1
0 0.2 0.4 0.6 0.8 1.0 0.01 0.1 1 10 100

Instantaneous Forward Voltage (V) t - Pulse Duration (s)

Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Transient Thermal Impedance

Revision: 28-Nov-17 3 Document Number: 87578

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 V60DM100C
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Vishay General Semiconductor

55
Epoxy printed circuit
board FR4 copper
50
Thermal Resistance (°C/W)

thickness = 70 μm

45

40

35
S (cm2)

30

25
1 2 3 4 5 6 7 8 9

Copper Pad Areas (cm2)

Fig. 7 - Thermal Resistance Junction-to-Ambient vs.
Copper Pad Areas

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

SMPD (TO-263AC)
0.402 (10.20)
0.071 (1.80)
0.386 (9.80) 0.020 (0.52)
0.063 (1.60)
0.059 (1.50) REF. 0.011 (0.27)

0.048 (1.21)
0.032 (0.81)

0.354 (8.99)
0.338 (8.59) 0.509 (12.93)
0.485 (12.33)

0 to 0.01
(0 to 0.254)
0.069 (1.74)
0.053 (1.34)
0.063 (1.60)
0.020 (0.52)
0.047 (1.20)
0.011 (0.27)
0.200 0.052 (1.23)
NOM.
(5.08) 0.028 (0.72)

Mounting Pad Layout

0.339 (8.60) 0.420 (10.66) MIN.
0.323 (8.20)

0.276 (7.00)
0.260 (6.60)
0.330
REF.
(8.38)
0.194
NOM.
(4.93)

0.604 (15.33)
0.525 (13.33)

0.120 (3.05) REF.

0.105 (2.67)
0.080 (2.03) MIN.
0.095 (2.41)

Revision: 28-Nov-17 4 Document Number: 87578

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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
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Revision: 08-Feb-17 1 Document Number: 91000