Pomrenke - Photonics and Optoelectronics - Spring Review 2013

119 February 2013
Integrity  Service  Excellence
Gernot S. Pomrenke, PhD
Program Officer
AFOSR/RTD
Air Force Research Laboratory
Photonics &
Optoelectronics
Date: 7 MAR 2013

2
2013 AFOSR SPRING REVIEW
NAME: Gernot S. Pomrenke
BRIEF DESCRIPTION OF PORTFOLIO:
Explore optoelectronic information processing, integrated photonics, and
associated optical device components & fabrication for air and space platforms
to transform AF capabilities in computing, communications, storage, sensing
and surveillance … with focus on nanotechnology approaches. Explore chip-
scale optical networks, signal processing, nano-sensing and terahertz radiation
components. Explore light-matter interactions at the subwavelength- and nano-
scale between metals, semiconductors, & insulators.
LIST SUB-AREAS IN PORTFOLIO:
- Nanophotonics & Plasmonics: Plasmonics, Photonic Crystals, Metamaterials,
nano-materials & 2D materials & Nano-Probes & Novel Sensing
- Integrated Photonics & Silicon Photonics: Optical Components, Silicon
Photonics, Hybrid Photonics
- Reconfigurable Photonics and Electronics
- Nanofabrication for Photonics: (3-D Assembly, Modeling & Simulation Tools)
- Quantum Computing w/ Optical Methods
- Terahertz Sources & Detectors

3DISTRIBUTION STATEMENT A – Unclassified, Unlimited Distribution
PAYOFFSCIENTIFIC CHALLENGES
MOTIVATION
--Explore light-matter interactions at the
subwavelength- and nano-scale between
metals, semiconductors, & insulators
--Radiative lifetimes and gain dynamics
--E&M fields & strong nonlinearities
--Fundamental building block of information
processing in the post-CMOS era
--Precise assembly & fabrication of
hierarchical 3-D photonics
--Exploiting the nanoscale for photonics:
nanostructures, plasmonics, metamaterials
--Overcoming current interconnect
challenges
--Need for Design Tools for photonic IC’s:
scattered landscape of specialized tools
--Enable Novel Computing (Quantum
Computing, All-Optical, Hybrid, HPC) &
Ultra Low Power Devices
3
--Exploit CMOS: Complex circuits structures
benefit from chip-scale fabrication
--Fiber-optic comm. with redundancy at
silicon cost for aerospace systems
--Establish a shared, rapid, stable shuttle
process
--Enable airborne C4ISR: combine SWaP
benefits w/ best-in-class device
performance
Optoelectronics & Photonics
Nanophotonics, Plasmonics, Integrated & Silicon Photonics
Extamural & Intramural Programs
Plasmonics will
enable synergy
between
electronics and
photonics

Optoelectronics & Photonics
Extamural & Intramural Programs
Program Components
Core – Intramural - LRIR
Core – Extramural
EOARD/AOARD/SOARD
AFIT
MURI
STTR/SBIR
DEPSCOR
HBCU/MI
DURIP
YIP
PECASE
NSA
DARPA
NNI/NNCO
BRI (2D Materials & Devices
Beyond Graphene –
planning phase)
LRIR PIs
Szep – RY: PICS Quantum Information Processing
Allen – RY: Plasmonic Enhancement of NIR
Cleary – RY: IR Plasmonic Component Development
Hendrickson – RY: Metamaterial Quantum Optics
Khoury – RY: Gain-Enhanced THz Laser
Bedford – RY: Loss Engineering for III-V Lasers
Osman – RI: Electro-optics for Processor
Interconnects
Huang – RV: SPP for near-field enhanced quantum
detectors
Vasileyv – RY: Programmable Reconfigurable Sensors
Eyink – RX: RE-mono-pnictide Nonlinear Optical
Properties
Weyburne – RY: Laser Photovoltaics for Remote
Sensors
New
Heckman – RY: Sensor Printed Electronics
Claflin – RY: Synthesis of Sn Alloys for IR

The Information, Computing,& Sensing Environment
Schuetz/Prather
Germanium Laser
National Academies: Optics and Photonics ACE Report ASD(R&E)
Michel/Kimerling

Outline/Agenda
• Nanophotonics: plasmonics, nanostructures,
metasurfaces etc
• Integrated Nanophotonics & Silicon Photonics
• Terahertz Sources & Detectors/Imagers
• Technology Transitions

Outline/Agenda/Highlights
Nanophotonics
Nanophotonics: metasurfaces, nanostructures,
plasmonics etc
• Shalaev – Broadband Light Bending with Plasmonic
Nanoantennas & Generalized Snell’s Law
• Capasso – Nanometer optical coatings based on strong
interference effects in highly absorbing media
• Atwater – Full Color Camera via Integrated Plasmonic
Filters on CMOS Image Sensor

Broadband Light Bending with Plasmonic Nanoantennas
Vladimir M. Shalaev – Purdue Univ,
Integrated Hybrid Nanophotonics FY11 MURI
- Metamaterials can be fabricated that are capable of bending light in
unusual ways
- Newly discovered generalized version of Snell’s law ushers in a new
era of light manipulation (2011-2012 news, Capasso):
Gradient in a phase discontinuity, Φ, along an interface between two media
with refractive indices n(t) and n(i) can modify the direction of the refracted
and the reflected waves by design and that this can occur in a very thin
layer.
Φ is essentially an additional momentum contribution that is introduced
by breaking the symmetry at the interface.
∆

9DISTRIBUTION STATEMENT A – Unclassified, Unlimited DistributionN. Yu, et al. Science, 2011 (Capasso Group)
Demonstrated at 8 µm wavelength
Generalized Snell’s law
Unit cell of a metainterface that can
create circularly polarized anomalous
refraction when excited by incident light
polarized along the vertical direction

By designing and engineering a phase discontinuity along an interface, one
can fully control the bending of a light wave beyond conventional Snell’s law
Purdue group extended work and demonstrate wavefront control in a
broadband wavelength range from 1.0 to 1.9 mm, accomplished with a
relatively thin 30-nm (~λ/50) plasmonic nanoantenna interface.
Applications:
spatial phase
modulation,
beam shaping,
beam steering,
and plasmonic
lenses
Broadband Light Bending with Plasmonic Nanoantennas, Purdue (cont)

11
Optical Interference Coatings
 Last half century: optical coatings and filters using thin film interference
effects (color/dichroic coatings, anti-reflection, high-reflection, etc)
 Existing thin film optical coatings use low-loss dielectric layers with thicknesses on the
order of a wavelength of light
 Harvard technique uses highly-absorbing, ultra-thin dielectric or
semiconducting layers to achieve strong interference effects
 Initial demonstration: gold (Au) substrate and germanium (Ge) ultra-thin films
 Deeply-subwavelength films exhibit strong, broadband absorption resonances
 Enabling concept: reflection phase shifts at an interface between two materials can
be engineered by tailoring the optical losses of the materials
Prof Capasso, Harvard,
“Wavefront Engineering With
Phase Discontinuities”
Nanometer optical coatings based on strong interference effects in
highly absorbing media
Capasso, Harvard

12
Polished
substrate
Rough substrate
(still works!)
Bare Au
Au + 7nm Ge
Au + 15nm Ge
 “Colored” gold films by coating with 5-20 nm germanium films  much
thinner than conventional λ/4 interference coatings
 Differences between pink/purple and purple/blue a result of just an
extra 4 nm of germanium (~8 atomic layers)
 Huge light absorption within ultra-thin layers: potential for low-cost,
low-footprint optical devices (detectors, modulators) as well as
labeling/printing
Coloring Metals with Ultra-thin Coatings
Kats et al, Nature Materials
(2012) (Capasso group)
Capasso, Harvard cont.

13
Harry Atwater, Caltech
Objective: Explore the first full plasmonic color imaging camera,
via plasmonic filters integrated onto a CMOS image sensor
Approach: Plasmonic hole array filters fabricated by
nanolithography integrated with state-of-the-art Sony CMOS image
sensor:
•Large field of red, green and blue filter pixels in Bayer mosaic pattern of 1.3 x
1.1 µm2 hole arrays in Al thin film on glass.
•Light coupled vertically from plasmonic filters into Si CMOS image sensor
diodes via PMMA dielectric and SiNx vertical light couplers -
•Designed and implemented signal processing for color fidelity from raw signal
input
•Investigated filter angle dependent transmission and robustness against
defects
Red 1.3×1.1μm2
Blue 1.3×1.1μm2
Green 1.3×1.1μm2
3 4 2
3 4 2
3 6 5
η=32/(6x9holes) = 0.59
3 4 4 2
3 6 6 5
5 6 6 3
2 4 4 3
η=66/(6x16holes) =0.69
3 4 4 4 2
3 6 6 6 5
5 6 6 6 3
3 6 6 6 5
3 4 4 4 2
η=112/(6x25holes) =0.75
Plasmonic Devices: Full Color Camera via
Integrated Plasmonic Filters on CMOS Image
Sensor
• Previous work has demo’d plasmonics & plasmonic hole array
transmission physics, but neither filter integration with ULSI CMOS
image sensor chips nor imaging
Road to Hyperspectral Imaging Arrays

14
360×320 5.6×5.6μm2 pixels
(2.016×1.792 mm2)
40×40 filter blocks
(224×224 μm2)
Mount on evaluation board with
C-mount lens and f/number
controller
Unit Cell of Integrated CMOS IS
with Plasmonic Hole Array Color
Filter
Full Color Camera via Integrated Plasmonic Filters
on CMOS Image Sensor

16
Result: Demonstrated First Full Color CMOS Imaging with Plasmonic Filters:
•High (45-60%) filter transmission efficiency – excellent agreement with theory

Integrated Nanophotonics & Silicon
Photonics
• Michel/Kimerling MIT - Germanium Laser
• Hochberg, UDel – OpSIS - Optoelectronic Systems
Integration in Silicon
• Univ Delaware, ASU, AFIT, AFRL/RY – SiGeSn: a new
material for Si photonics & IR
DISTRIBUTION STATEMENT A – Unclassified, Unlimited Distribution

18
Ge Light Emitters for Si Photonics
Objectives
Approach
Juergen Michel & Lionel Kimerling, MIT
Key Findings
 RT lasing from Germanium
 Increased Germanium n+ doping
 Germanium passivation
 Reduction of optical losses
 CMOS compatible device design and
modeling
 Electrically pumped lasing observed.
 ~200nm gain spectrum from 1520nm to
1700nm
 Increased n-type doping level in Ge
to >5*1019cm-3
Germanium on Si
 highly doped n+ Ge
 Si/Ge/Si hetero junctions
 Ring/disc laser structures (modeling
support U. Delaware)
 Carrier/Emission dynamics
(collaboration with Boston U.) 1576nm 1622nm 1656nm
Laser lines in n-type Ge at 300K

19
Direct Gap Emission from Germanium
Tensile Strain and N-type doping
 Ge is an indirect gap semiconductor.
 It can theoretically become direct gap with 2% tensile strain, but the
emission shifts from ~1550 nm to 2500 nm.
 For efficient emission at 1550-1620 nm: 0.2-0.3% tensile strain plus n-
type doping equates the energy of empty states in the Γ and L valleys.
Liu et al, Opt. Express. 15, 11272 (2007)
<111>
k
E
Γ
L
0.800eV
0.664eV
(a)
<111>
k
E
L
(b)
<111>
k
E
L
(c)
electrons
Γ Γ
bulk Ge tensile strained i-Ge tensile strained n+ Ge
<111>
k
E
Γ
L
0.800eV
0.664eV
(a)
<111>
k
E
L
(b)
<111>
k
E
L
(c)
electrons
Γ Γ
bulk Ge tensile strained i-Ge tensile strained n+ Ge

20
Lasing in Monolithic Ge-on-Si
Fabry-Perot Cavities, Electrical Pumping
 Laser linewidth < 1.2 nm
 Wide gain spectrum of about 200 nm
 Estimated gain of > 1000 cm-1
 Output power up to 8 mW
Camacho et al., Opt. Exp. 20, 11316 (2012)
L-I curve at 300K
Monolithic Ge-on-Si lasers enable large scale electronic-photonic integration

21
60
Years
Why did silicon win?
Not device performance…
An opportunity
to support
shared
fabrication for
silicon
photonics
Optoelectronic Systems Integration in Silicon
Prof Michael Hochberg, Univ of Delaware, OpSIS Foundry
opsisfoundry.org/
http://nanophotonics.ece.udel.edu/aboutthelab.html

22
OpSIS - Scaling toward complex systems
• We’re seeing a Moore’s Law-like growth in system
complexity
• Doubling time is around a year
• Filling a reticle with photonic devices of ~500 square
microns gets us to ~1.7M devices

23
OpSIS
An opportunity to support shared fabrication for silicon photonics
OpSIS Objective:
•Make integrated photonic fabrication flows easily and
cheaply accessible to the research and development
community through MPW shared-shuttle processes
•Drive process and tool development and
standardization
•Provide educational resources and support to the
community
•Develop an ecosystem of service and equipment
providers to help move the silicon photonics community
forward
Luxtera Opens Industry Leading Silicon CMOS Photonic Process to OpSIS
Community – 23 Jan 2012

24
OpSIS Research Activities
• Development of design tools and design
elements
• Demonstrations of complex systems
• Development of methodology and
measurement tools/techniques
• Design automation

25
Recent results
• IME001 delivered to ~30 users
• 25 Gbit/second platform – modulators,
detectors, low-loss waveguides
• High-efficiency waveguide-coupled
photodiodes at >40GHz
• World-record low-loss silicon
modulators
• Ultra-low loss passives library –
crossings, couplers, junctions, etc.
• Hybridized lasers
• Ongoing work on electronics
integration
OpSIS

26
SiGeSn: a new material for Si photonics
The first group-IV material with a widely tunable 2D compositional
space, SiGeSn makes it possible to decouple band gap and lattice
constant, enabling wide-range applications from thermal imaging to
photovoltaics to lasers.
Basic materials science Program on SiGeSn
Multi-PI efforts: Arizona State Univ (Kouvetakis, Menendez), Univ Delaware
(Kolodzey), AFIT (Yeo), Univ of MA (Sun, Soref) & AFRL/RY (Claflin, Kiefer)

Terahertz Sources & Detectors
Terahertz Sources & Detectors
• Capasso – THz QCL
• Microtech Instruments, Inc.– THz Source (T)
• Agiltron’s THz Camera Module (T)

28
28Terahertz Quantum Cascade Nonlinear Optical
Sources and Lasers
Prof.Federico Capasso - Harvard University
Temperature Performance of THz Quantum Cascade Lasers
The maximum operating
temperature for THz QCLs (2-5
THz) has so far stubbornly
remained below TE cooler
values ( < 200K)
A fundamental understanding of the temperature
performance of THz QCLs is therefore necessary in
order formulate practical strategies to overcome
the current temperature barrier to THz lasing
Conclusion/Follow-on: Increasing the diagonality
of the transition Semiconductor materials with
energetic LO-phonon energies— such as
GaN/AlGaN

29
Terahertz Parametric Oscillator
• http://www.mtinstruments.com/THz_Generators.html
2003-2012 Success Story: AFOSR (STTR), AFRL/RYH
(David Bliss – OP-GaAs), DARPA (TIFT)
Microtech Instruments (Hurlbut), Inc & Stanford (Vodopyanov, Fejer)
TPO system based on difference frequency generation in quasi-phase matched GaAS crystals
placed inside an optical parametric oscillator (OPO) pumped by an ultrafast fiber laser

30
Agiltron, Inc. and University of Massachusetts Lowell
Air Force STTR Phase I Contract FA9550-10-C-0122
Technology: A passive, uncooled THz imager
based on Agiltron’s established
photomechanical imager
Objective
• Frequency range: 1–10 THz (λ = 30–300 µm)
• Pixel resolution: 128×128
• NEP: < 10–12 W/Hz1/2
• Detectivity: > 1010 cm Hz1/2/W
• Frame rate: > 30 fps
• Operating temperature: Rm temp (uncooled)
Relevance: The photomechanical THz imager will
reduce SWAP from rack-mounted systems
consuming hundreds of watts to ultra-portable
devices consuming less than 10 W, eliminate the
need for a THz source, and slash the imager cost
from over $200,000 to less than $10,000.
Technical Approach
The photomechanical THz imager
contains a MEMS-based sensor chip
that transduces THz radiation into a
visible signal for capture by a high-
performance CCD imager.
Phase II - Unfunded but
Agiltron moved forward to
develop the imager at own
cost
Principal Investigator (PI)
Dr. Matthew Erdtmann
Agiltron, Inc.
Woburn, Massachusetts
merdtmann@agiltron.com
University Co-PI
Dr. Andrew Gatesman
Submillimeter-Wave Technology Laboratory
University of Massachusetts Lowell
Lowell, Massachusetts
andrew_gatesman@uml.edu

Outline/Agenda
Technology Transitions
• Technology Transitions
• RHK Technologies – Nanospectroscopy Platform
• FY03 Nanoprobe MURI – Boston Univ – results in
IARPA – Subsurface Microscopy of Integrated Circuits
• FY08 Nanomembrane MURI, Univ of Tx, Austin, Prof
Chen – NIH – Bio-Sensing
• Nanomembranes:
– State of Saxony, Germany – Nanomembrane Research
($56Million)
– FY08 Nanomembrane MURI (Univ WI) – “all the nanomembrane
patents were recently non-exclusively licensed by Intel"
– Flexible Electronics – electronic tattoos, nano-printing tech
– Two Small Businesses: SysteMech, ProsperoBiosciences

DISTRIBUTION STATEMENT A – Unclassified, Unlimited Distribution
Ryan Murdick <ryan@rhk-tech.com>
Concept: Create an
NSOM/SPM controller /data
acquisition/real time
analysis instrument
integrated with an
AFM/TERS NanoProbe.
Objective:
Development of
nanoscale
spectroscopic
imaging techniques
providing
chemically-specific
information
Nanospectroscopy Platform Development
Phase II STTR topic number AF08-BT30
Ryan Murdick/John Keem PI (RHK Technology),
Prof L. Novotny, CoPI (U of Rochester)
Implementation:
Instrumentation &
techniques for 1.
Chemically-specific
imaging with
2. High spatial
resolution
Specification:
achieve sub-100nm
resolutions and
acquire chemically-
specific spectra in
times of ~ 1-100 ms
per pixel.
Delivery:
AFRL/RYMWA
WPAFB Ken
Schepler, 2013
FY03 MURI Transition

HIGH-RESOLUTION SUBSURFACE MICROSCOPY
OF INTEGRATED CIRCUITS
Objective:
• Development of high-resolution subsurface
microscopy techniques for integrated circuit
(IC) imaging with angular spectrum and
polarization control
M. S. Unlu and B. B Goldberg (Boston University)
Achievements:
•Confocal imaging of passive polysilicon
structures. 145nm (λ0/9) resolution in subsurface
backside microscopy of ICs (Opt. Lett. 2008).
Method:
• Focal field engineering using Numerical
Aperture Increasing Lens (NAIL) microscopy
• NAIL provides NAs of
up to 3.5 in silicon IC
imaging which allows
for vectorial focusing
opportunities
Approach:
• Annular pupil plane apertures with
linearly polarized light.
clear aperture annular aperture
1 µm
MURI to $5M IARPA program:
•Achievement of sub-surface nanoscale imaging
with FY03 MURI was integral in winning IARPA
program to advanceto 22nm and 11nm node and
transition to industry
FY03 MURI Transition

AFOSR/DoD MURI Spin-off Program funded by NCI/NIH
Silicon Nanomembrane Photonic Crystal Microcavities for High Sensitivity
Bio-Sensing
FY08 MURI at Univ Tx, Austin with Prof Chen (Contr. # FA9550-08-1-0394): Gernot S. Pomrenke
NCI SBIR Ph2 (Contr. #HHSN261201000085C): Deepa Narayanan
Important achievements through AFOSR MURI program that facilitate the
support from NCI/NIH SBIR Program for early cancer detection:
1.High coupling efficiency methods to slow light silicon nanomembrane photonic
crystal waveguides developed in MURI enabled enhanced coupling to L7 and L13
resonance in the NCI SBIR program
2.Slow light effect of PCW in silicon nanomembrane enhances the detection
sensitivity due to longer interaction time between analytes and the sensing light
3.L13 and L7 silicon nanomembrane PC microcavities achieve high Q~26,760 in
liquids due to better optical confinement and higher sensitivity bio- and chemical
sensing than other PC microcavities due to larger optical mode overlap with analytes.
Univ Tx, Ray T. Chen et al, Opt. Lett. 37 (8), (2012)

- Nanophotonics more
---- Plasmonics, Nonlinear, MetaPhotonics
---- Chip-scale, 3D, computation
---- 2D materials
- Integrated Photonics, Silicon Photonics more
- Reconfigurable El/Ph & Optical Computing lower
- Quantum Computing w/ Optical Methods (QIS) const
- Nanofabrication (MURI, OSD & AFOSR STTR) const
- Nano-Probes lower
- Terahertz Sources & Detectors lower
- THz/Microwave/Millimeter Wave photonics change
Interactions - Program Trends
AFRL – RY, RI, RX, RV, RW, 475th/RH
AFRL – HPC Resources
EOARD – Gonglewski & LtCol Pollak
AOARD – Erstfeld, LtCol Low
SOARD – Fillerup, Pokines
ONR, ARO – MURI etc eval team
AFOSR PMs
RSE: Reinhardt, Weinstock, Curcic,
Nachman, Thomas, Hwang
RSL: Bonneau, DeLong
RSA: C. Lee, Harrison
RSPE: Lawal, E. Lee

36
FY12 Selected Awards /
Prizes / Recognitions
Close coordination within AFRL, DoD, and 26
federal agencies as NSET member to the
National Nanotechnology Initiative (NNI)
http://www.nano.gov/partners
AFOSR is the scientific leader in
nanophotonics, nanoelectronics,
nanomaterials and nanoenergetics –
one of the lead agencies to the current
OSTP Signature Initiatives
“Nanoelectronics for 2020 and Beyond”
and coordinating member to
“Sustainable Nanomanufacturing”
http://www.nano.gov/initiatives/government/signature
Optoelectronic Information Processing
Nanophotonics, Plasmonics, Integrated & Silicon Photonics
Demo’d first plasmonic all-optical modulator,
plasmon enhanced semiconductor
photodetector, plasmon laser, superlens,
hyperlens, plasmonic solitons, slot waveguide,
“Metasurface” collimator etc
" World Changing Ideas
2012” Electronic
Tattoos, sciencemag ,
J. Rogers UICU
P. Bhattacharya –
Heinrich Welker Prize
Luke Lester IEEE fellow
SMART transition – Huffaker, UCLA
student to Bedford AFRL/RY

Conclusion & Future
Key Program ideas, thrusts, and challenges:
Plasmonics & Metamaterials/ Metasurfaces/ Meta Photonics
Bandgap engineering, Strain engineering, Index of refraction eng.
Subwavelength - Operating beyond the diffraction limit; hole transmission
Integrated photonics & establishing a shared, rapid, stable shuttle process
for high-complexity silicon electronic-photonic systems (MOSIS model)
gernot.pomrenke@afosr.af.mil
Future: Metasurfaces/ Meta Photonics, Quantum Integrated
Nanophotonics, Ultra Low Power, Graphene Optoelectronics, 3D
Photonics
STTR Need: Integrated Silicon Photonics, Photonics Fabication &
Packaging, SiGeSn material development
Transformational Opportunities
Reconfigurable chip-scale photonic
THz & Microwave/Millimeter Wave photonics,
Integrated photonics circuits
Integrated Photonics: Engine for 21st Century Innovation –
foundation for new IT disruptive technologies
opsisfoundry.org/

Pomrenke - Photonics and Optoelectronics - Spring Review 2013

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Pomrenke - Photonics and Optoelectronics - Spring Review 2013