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    RF Amplifier Design: Johan Wernehag Electrical and Information Technology

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    Daniel Cafu
    The document discusses amplifier design methods, including: 1. Transistor biasing methods like voltage-driven and current-driven approaches for bipolar transistors, and their temperature dependence. 2. Passive biasing circuits like simple current-driven designs and alternative solutions, and voltage-driven series feedback. 3. Active biasing circuits can provide better temperature compensation compared to passive designs.

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    RF Amplifier Design: Johan Wernehag Electrical and Information Technology

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    The document discusses amplifier design methods, including: 1. Transistor biasing methods like voltage-driven and current-driven approaches for bipolar transistors, and their temperature dependence. 2. Passive biasing circuits like simple current-driven designs and alternative solutions, and voltage-driven series feedback. 3. Active biasing circuits can provide better temperature compensation compared to passive designs.

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    The document discusses amplifier design methods, including: 1. Transistor biasing methods like voltage-driven and current-driven approaches for bipolar transistors, and their temperature dependence. 2. Passive biasing circuits like simple current-driven designs and alternative solutions, and voltage-driven series feedback. 3. Active biasing circuits can provide better temperature compensation compared to passive designs.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    84 views17 pages

    RF Amplifier Design: Johan Wernehag Electrical and Information Technology

    Uploaded by

    Daniel Cafu
    The document discusses amplifier design methods, including: 1. Transistor biasing methods like voltage-driven and current-driven approaches for bipolar transistors, and their temperature dependence. 2. Passive biasing circuits like simple current-driven designs and alternative solutions, and voltage-driven series feedback. 3. Active biasing circuits can provide better temperature compensation compared to passive designs.

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    of 17

    Lecture 8

    RF Amplifier Design

    Johan Wernehag
    Electrical and Information Technology
    Johan Wernehag, EIT
    Lecture 8

    • Amplifier Design
    – Summary of Design Methods
    – Transistor Biasing
    • Voltage and Current Drive of Bipolar Transistors
    • Temperature Dependence
    – Passive Biasing Circuits
    – Active Biasing Circuits
    – Biasing of Field Effect Transistors
    – Isolating the Bias Design from Signal Designs
    – Diagnostic test

    Johan Wernehag, EIT


    Summary of Amplifier Design Methods
    Specific GT and F
    1. Decide if the transistor is unconditionally
    stable or not
    2. Calculate stability circles if the transistor F
    is conditionally stable ΓS

    3. Choose the design method for ΓL


    specific gain
    4. Assume that conjugate match will be
    applied at the output
    Stable ga
    5. Calculate and draw the gain circle area ΓS
    (ga < GMSG) and noise circle (F) ΓOUT Stable
    area ΓL

    6. Select a ΓS in the stable area that S11


    provides a suitable compromise between S22
    gain and noise figure
    7. Calculate ΓOUT regarding the selected ΓS
    8. Calculate ΓL = ΓOUT* and check for stability
    9. Design the matching networks and verify stability for all frequencies of interest
    10.Design the biasing circuits for proper DC settings of the transistor

    Johan Wernehag, EIT


    Transistor Biasing

    • How is the bias setting specified?


    – collector current IC and
    collector-emitter voltage VCE for BJT
    (ID and VDS for FET)

    • Why controlling the biasing?


    – S-parameters or similar are only valid at a specific
    operating point (small signal parameters)
    – temperature essentially controls the properties of
    the transistor. More so on BJTs than on FETs

    Johan Wernehag, EIT


    Voltage or Current Drive of the Transistor

    The collector current


    • Voltage drive: increase exponentially
    wrt the base voltage
    IC

    IC

    VBE

    VBE

    The collector current


    depends linearly wrt
    • Current drive: the base current
    IC

    IC

    IB

    IB

    Johan Wernehag, EIT


    Voltage Drive of Bipolar Transistors

     
    IC
    • Simplified VBE VBE

    relationship: IC  IS e VT
     1  I S  e
    VT

     
    VBE

    – where the thermal voltage VT  kT q  26 mV T300 K

    • k = Boltzmann’s constant = 1.38·10-23 [J/K]


    • T = absolute temperature [K]
    • q = charge of the electron = 1.6·10-19 [C]

    • The saturation current IS varies between different transistors


    • VT and IS are both temperature dependent

    Johan Wernehag, EIT


    Temperature Dependence at Voltage Driven Biasing

    I S  A I C  A
    80mA

    55A
    T  C  T  C 

    VBE
    • Example:
    IC
    IC  IS  e 
    VT

    Calculate the collector


    current at constant VBE  1 mA at T  300 K
    VBE  0, 7745 V VBE

    -20Ԩ to 80Ԩ is a
    standard temp. range for
    a commercial design
    Johan Wernehag, EIT
    Temperature Dependence at Current Driven Biasing

    IC
    I C  0  I B

    IB

    0

    T  C 

    The temperature dependence at current driven biasing is


    considerably ”friendlier” compared to voltage driven biasing!
    A factor of 2 compared to 2000!
    Johan Wernehag, EIT
    Controlling the Operating Point
    • The operating point needs to be controlled to avoid
    thermal avalanche effect that might destroy the device

    • Three common methods to


    implement the feedback: VCC

    RC
    RB

    – passive current or voltage IB


    I
    C

    VCC
    driven biasing
    RC1
    R1
    T2
    I
    C1
    – active biasing
    I IB
    R2 C2 T1
    VCC
    RC2

    ID
    I

    – thermal feedback
    C1
    IB T1

    V
    D

    Johan Wernehag, EIT


    Current Driven Biasing
    • The simplest circuitry: VCC

    – Moderate temperature dependency RC


    – Sensitive to variations in the current gain, 0 RB

    – Requires large resistance values I


     R
    C
    IB
    – Loop gain: 0 C
    RB
    – Large loop gain if the ratio VCC / VCE is large

    • Alternative circuit solution:


    – Not strictly current driven VCC

    – Moderate temperature dependency RC


    – Less sensitive to variations in the current gain RB1

    – Does not require large resistance values I


     R RB2 RB3 I B
    C
    – Loop gain : 0 C 
    RB3 RB1  RB2
    RB2
    – Large loop gain if the ratio VCC / VCE is large

    Johan Wernehag, EIT


    Voltage Driven Biasing

    • Series feedback
    VCC
    • Decent temperature dependence
    RC
    • Not sensitive to variations in the current
    RB1 I
    gain C
    IB
    • RC may be replaced with an RFC*
    • Loop gain: gm∙RE RB2
    RE

    • Not suitable at high frequencies


    – due to difficulties to signal ground the emitter
    without introducing stability problems

    *RFC = Radio-Frequency Choke, a large reactance coil intended for high frequencies

    Johan Wernehag, EIT


    Example of Active Biasing Circuit

    VCC I C  mA  without feedback

    RC1
    R1
    active biasing
    T2
    I passive
    C1 current drive
    I IB
    R2 C2 T1

    RC2 T  C 

    T2: low frequency transistor working T1: high frequency transistor


    as current generator

    Johan Wernehag, EIT


    Control by Thermal Feedback

    VCC

    ID
    I
    C1
    Thermally
    connected IB T1

    V
    D

    The diode VD is thermally connected to the transistor


    Good in PAs etc. where high currents heat it up

    Johan Wernehag, EIT


    Biasing of Field Effect Transistors

    • The FET shows a slight temperature dependence


    compared to the BJT
    • Large spreading in the threshold voltage compared to
    the BJT
    • Only voltage driven biasing possible
    • Passive biasing circuits are not usable if there is a large
    variation in the threshold voltage

    Johan Wernehag, EIT


    Isolating the Bias Design from the Signal Design
    Example using
    RFC’s

    biasing circuit

    signal
    output

    signal
    input
    signal circuit

    RFC = Radio-Frequency Choke


    may be used up to medium high frequencies

    Johan Wernehag, EIT


    Isolating the Bias Design from the Signal Design
    Example using
    stubs

    biasing circuit

    signal
    output

    signal
    input

    signal circuit

    At high frequencies the RFC’s are replaced with line elements

    Johan Wernehag, EIT


    Lab 3 – RF amplifier

    Johan Wernehag, EIT

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