Semiconductor Technical Data: Ordering Information
Semiconductor Technical Data: Ordering Information
Semiconductor Technical Data: Ordering Information
#
# ! !
$
# # ! L SUFFIX
CERAMIC
! $ &$"% ' # CASE 620
Y2 3
X3 15 13 Z3
Y3 1
VDD = PIN 16
VSS = PIN 8
REV 3
1/94
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
* Maximum Ratings are those values beyond which damage to the device may occur. VSS 8 9 A
†Temperature Derating:
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Plastic “P and D/DW” Packages: – 7.0 mW/_C From 65_C To 125_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Ceramic “L” Packages: – 12 mW/_C From 100_C To 125_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)
VDD
– 55_C 25_C 125_C
Characteristic Symbol Vdc Min Max Min Typ # Max Min Max Unit
Output Voltage “0” Level VOL 5.0 — 0.05 — 0 0.05 — 0.05 Vdc
Vin = VDD or 0 10 — 0.05 — 0 0.05 — 0.05
15 — 0.05 — 0 0.05 — 0.05
“1” Level VOH 5.0 4.95 — 4.95 5.0 — 4.95 — Vdc
Vin = 0 or VDD 10 9.95 — 9.95 10 — 9.95 —
15 14.95 — 14.95 15 — 14.95 —
Input Voltage “0” Level VIL Vdc
(VO = 4.5 or 0.5 Vdc) 5.0 — 1.5 — 2.25 1.5 — 1.5
(VO = 9.0 or 1.0 Vdc) 10 — 3.0 — 4.50 3.0 — 3.0
(VO = 13.5 or 1.5 Vdc) 15 — 4.0 — 6.75 4.0 — 4.0
“1” Level VIH Vdc
(VO = 0.5 or 4.5 Vdc) 5.0 3.5 — 3.5 2.75 — 3.5 —
(VO = 1.0 or 9.0 Vdc) 10 7.0 — 7.0 5.50 — 7.0 —
(VO = 1.5 or 13.5 Vdc) 15 11 — 11 8.25 — 11 —
+VDD
VDD
A Z0
PULSE Vin CL
GENERATOR B
X0 20 ns 20 ns
Y0 Z1 VDD
CL 90%
X1
Vin
Y1 10%
VSS
X2 Z2 50% DUTY CYCLE
CL
Y2
X3
Y3 Z3
VSS CL
ISS
500 µF
VDD
20 ns 20 ns
V VDD
PULSE A DD Z0 INPUT 90%
GENERATOR CL 50%
B
10% VSS
X0
Z1 tPHL tPLH
Y0
CL 90% VOH
X1
OUTPUTS 50%
Y1 OUTPUT 10%
Z2 VOL
X2
Y2 CL
tTHL tTLH
X3 tPLH tPHL
Y3 V Z3 VOH
SS CL OUTPUT 50%
VOL
X0 X1 X2 X3 Y0 Y1 Y2 Y3
CONTROL A A MC14519B
AND/OR SELECT/EXCL NOR
CONTROL B B Z0 Z1 Z2 Z3
INVERT
MC14070B
QUAD
EXCLUSIVE OR
Q0 Q1 Q2 Q3
CONVERSION TABLE
Operation Code Output
A B INV Q0 Q1 Q2 Q3 Function
0 0 0 0 0 0 0 Inhibit, all zeros
0 0 1 1 1 1 1 Inhibit, all ones
1 0 0 X0 X1 X2 X3 Control A
1 0 1 X0 X1 X2 X3 Control A and Invert
0 1 0 Y0 Y1 Y2 Y3 Control B
0 1 1 Y0 Y1 Y2 Y3 Control B and Invert
1 1 0 X0 ĥ Y0 X1 ĥ Y1 X2 ĥ Y2 X3 ĥ Y3 Exclusive NOR
1 1 1 X0 ę Y0 X1 ę Y1 X2 ę Y2 X3 ę Y3 Exclusive OR
This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However,
precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high-impedance
circuit. For proper operation, Vin and Vout should be constrained to the range VSS ≤ (Vin or Vout) ≤ VDD.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either VSS or VDD). Unused outputs must
be left open.
L SUFFIX
CERAMIC DIP PACKAGE
CASE 620–10
ISSUE V
–A–
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
16 9
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEAD WHEN
–B– FORMED PARALLEL.
1 8 4. DIMENSION F MAY NARROW TO 0.76 (0.030)
WHERE THE LEAD ENTERS THE CERAMIC
C L BODY.
INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.750 0.785 19.05 19.93
B 0.240 0.295 6.10 7.49
–T– C ––– 0.200 ––– 5.08
N K D 0.015 0.020 0.39 0.50
SEATING
PLANE E 0.050 BSC 1.27 BSC
F 0.055 0.065 1.40 1.65
G 0.100 BSC 2.54 BSC
E M H 0.008 0.015 0.21 0.38
K 0.125 0.170 3.18 4.31
F G J 16 PL
L 0.300 BSC 7.62 BSC
D 16 PL 0.25 (0.010) M T B S M 0_ 15 _ 0_ 15 _
N 0.020 0.040 0.51 1.01
0.25 (0.010) M T A S
P SUFFIX
PLASTIC DIP PACKAGE
CASE 648–08
ISSUE R
NOTES:
–A– 1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
16 9 3. DIMENSION L TO CENTER OF LEADS WHEN
FORMED PARALLEL.
B 4. DIMENSION B DOES NOT INCLUDE MOLD FLASH.
1 8 5. ROUNDED CORNERS OPTIONAL.
INCHES MILLIMETERS
DIM MIN MAX MIN MAX
F C L A 0.740 0.770 18.80 19.55
B 0.250 0.270 6.35 6.85
S C 0.145 0.175 3.69 4.44
D 0.015 0.021 0.39 0.53
SEATING F 0.040 0.70 1.02 1.77
–T– PLANE G 0.100 BSC 2.54 BSC
H 0.050 BSC 1.27 BSC
H K M J 0.008 0.015 0.21 0.38
J K 0.110 0.130 2.80 3.30
G L 0.295 0.305 7.50 7.74
D 16 PL
M 0_ 10 _ 0_ 10 _
0.25 (0.010) M T A M S 0.020 0.040 0.51 1.01
D SUFFIX
PLASTIC SOIC PACKAGE
CASE 751B–05
ISSUE J
–A–
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
16 9 2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
–B– MOLD PROTRUSION.
P 8 PL
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
1 8
0.25 (0.010) M B S PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
G
MILLIMETERS INCHES
DIM MIN MAX MIN MAX
F A 9.80 10.00 0.386 0.393
K R X 45 _ B 3.80 4.00 0.150 0.157
C 1.35 1.75 0.054 0.068
D 0.35 0.49 0.014 0.019
C F 0.40 1.25 0.016 0.049
–T– SEATING G 1.27 BSC 0.050 BSC
PLANE
M J J 0.19 0.25 0.008 0.009
K 0.10 0.25 0.004 0.009
D 16 PL M 0_ 7_ 0_ 7_
P 5.80 6.20 0.229 0.244
0.25 (0.010) M T B S A S R 0.25 0.50 0.010 0.019
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*MC14519B/D*
MC14519B ◊ MOTOROLA CMOS LOGIC DATA
MC14519B/D
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