Band to Band Tunneling (BTBT)

This paper studies band-to-band tunneling in the transverse and lateral directions of van der Waals MoS 2 /WSe 2 heterojunctions. We observe room-temperature negative differential resistance (NDR) in a heterojunction diode comprised of few-layer WSe 2 stacked on multilayer MoS 2. The presence of NDR is attributed to the lateral band-to-band tunneling at the edge of the MoS 2 /WSe 2 heterojunction. The backward tunneling diode shows an average conductance slope of 75 mV/dec with a high curvature coefficient of 62 V −1. Associated with the tunnel-diode characteristics, a positive-to-negative transconductance in the MoS 2 /WSe 2 heterojunction transistors is observed. The transition is induced by strong interlayer coupling between the films, which results in charge density and energy-band modulation. The sign change in transconductance is particularly useful for multivalued logic (MVL) circuits, and we therefore propose and demonstrate for the first time an MVL-inverter that shows three levels of logic using one pair of p-type transistors.

The experimental observation of band-to-band tunneling in novel tunneling field-effect transistors utilizing a monolayer of MoS2 as the conducting channel is demonstrated. Our results indicate that the strong gate-coupling efficiency enabled by two-dimensional materials, such as monolayer MoS2, results in the direct manifestation of a band-to-band tunneling current and an ambipolar transport.

The downscaling of conventional MOSFETs has come to its fundamental limits. TFETs are very attractive devices for low power applications because of their low off-current and potential for smaller sub threshold slope. In this paper, the impact of various parameter variations on the performance of a DG-PNIN Tunnel field effect transistor is investigated. In this work, variations in gate oxide material, source doping, channel doping, drain doping, pocket doping and body thickness are studied and all these parameters are optimized as performance boosters to give better current characteristics parameters. After optimization with all these performance boosters, the device has shown improved performance with increased on-current and reduced threshold voltage and the Ion/Ioff ratio is > 106

Most of the attractive properties of carbon nanotubes (CNTs), such as the large carrier mobilities and the weak electron–phonon interaction which make ballistic transport possible over long distances, are also exhibited by graphene nanoribbons (GNRs), ie edge-terminated ...

This paper explore the potential of a Metal Insulator Metal gate controlled tunneling Transistor (MIMT) as a high performance device immune to band-to-band tunneling, GIDL, and stochastic channel doping fluctuations. A semi-analytical model was developed and used to guide device optimization. It is shown that the best performance is obtained by increasing the ratio between the permittivity of the gate