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Super-resolution imaging of nanoscale inhomogeneities in hBN-covered and encapsulated few-layer graphene
Authors:
Lina Jäckering,
Konstantin G. Wirth,
Lukas Conrads,
Jonas B. Profe,
Alexander Rothstein,
Hristiyana Kyoseva,
Kenji Watanabe,
Takashi Taniguchi,
Dante M. Kennes,
Christoph Stampfer,
Lutz Waldecker,
Thomas Taubner
Abstract:
Encapsulating few-layer graphene (FLG) in hexagonal boron nitride (hBN) can cause nanoscale inhomogeneities in the FLG, including changes in stacking domains and topographic defects. Due to the diffraction limit, characterizing these inhomogeneities is challenging. Recently, the visualization of stacking domains in encapsulated four-layer graphene (4LG) has been demonstrated with phonon polariton…
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Encapsulating few-layer graphene (FLG) in hexagonal boron nitride (hBN) can cause nanoscale inhomogeneities in the FLG, including changes in stacking domains and topographic defects. Due to the diffraction limit, characterizing these inhomogeneities is challenging. Recently, the visualization of stacking domains in encapsulated four-layer graphene (4LG) has been demonstrated with phonon polariton (PhP)-assisted near-field imaging. However, the underlying coupling mechanism and ability to image subdiffractional-sized inhomogeneities remain unknown. Here, we retrieve direct replicas and magnified images of subdiffractional-sized inhomogeneities in hBN-covered trilayer graphene (TLG) and encapsulated 4LG, enabled by the hyperlensing effect. This hyperlensing effect is mediated by hBN's hyperbolic PhP that couple to the FLG's plasmon polaritons. Using near-field microscopy, we identify the coupling by determining the polariton dispersion in hBN-covered TLG to be stacking-dependent. Our work demonstrates super-resolution and magnified imaging of inhomogeneities, paving the way for the realization of homogeneous encapsulated FLG transport samples to study correlated physics.
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Submitted 8 July, 2024; v1 submitted 5 July, 2024;
originally announced July 2024.
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Superballistic conduction in hydrodynamic antidot graphene superlattices
Authors:
Jorge Estrada-Álvarez,
Juan Salvador-Sánchez,
Ana Pérez-Rodríguez,
Carlos Sánchez-Sánchez,
Vito Clericò,
Daniel Vaquero,
Kenji Watanabe,
Takashi Taniguchi,
Enrique Diez,
Francisco Domínguez-Adame,
Mario Amado,
Elena Díaz
Abstract:
Viscous electron flow exhibits exotic signatures such as superballistic conduction. Bending the geometry of the device is a must to observe hydrodynamic effects. To this end, we build three antidot graphene superlattices with different hole diameters. We measure their electrical properties at various temperatures and under the effect of a perpendicular magnetic field. We find an enhanced superball…
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Viscous electron flow exhibits exotic signatures such as superballistic conduction. Bending the geometry of the device is a must to observe hydrodynamic effects. To this end, we build three antidot graphene superlattices with different hole diameters. We measure their electrical properties at various temperatures and under the effect of a perpendicular magnetic field. We find an enhanced superballistic effect, suggesting the effectiveness of the geometry at bending the electron flow. In addition, superballistic conduction behaves non-monotonically with the magnetic field, which is related with the ballistic-hydrodynamic transition. We also analyze the device resistance as a function of the size of the antidot superlattice to find characteristic scaling laws describing the different transport regimes. We prove that the antidot superlattice is a convenient geometry for realizing hydrodynamic flow, and the experiment provides valuable explanations for the technologically relevant effects of superballistic conduction and scaling laws.
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Submitted 5 July, 2024;
originally announced July 2024.
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Single-Ion Spectroscopy of h-BN Point Defect Fluorescence in Liquid Environments
Authors:
Yecun Wu,
Kun Xu,
Hori Pada Sarker,
Takashi Taniguchi,
Kenji Watanabe,
Frank Abild-Pedersen,
Arun Majumdar,
Yi Cui,
Yan-Kai Tzeng,
Steven Chu
Abstract:
Understanding individual ions in solutions is essential for advancing our knowledge of complex chemical systems. However, tracking and detecting ions at the single-ion level in liquid environments remains a challenge. We introduce a strategy for visualization and differentiation of different ions in liquid environment via point defects in hexagonal boron nitride (h-BN) as the ion sensor. Ions inte…
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Understanding individual ions in solutions is essential for advancing our knowledge of complex chemical systems. However, tracking and detecting ions at the single-ion level in liquid environments remains a challenge. We introduce a strategy for visualization and differentiation of different ions in liquid environment via point defects in hexagonal boron nitride (h-BN) as the ion sensor. Ions interacting with the optically active point defects in h-BN alter emission properties, allowing us to capture these changes and visualize single ions. Using Li+ in organic electrolytes as a model, we observed a spectral shift of over 10 nm upon Li+ addition, and an over 50 nm red shift with applied electric fields due to reactions between Li+ and h-BN point defects. Frequency domain analysis further revealed the rapid dynamics of ion migration and the slow electrochemical reactions. We further spectroscopically differentiated various ions (H+, Li+, Na+, K+, Zn2+, Al3+) in aqueous solution. Each ion, with its distinct electron cloud configuration, interacts distinctively with the electron clouds of h-BN defects, resulting in specific and identifiable spectroscopic signatures. This ion sensing platform enables the direct visualization and differentiation of individual ions in a liquid environment, offering insights into chemical reactions at the single-ion level. This capability presents potential applications in various fields involving ions in liquids, including but not limited to biology, battery technology, and environmental science.
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Submitted 2 July, 2024;
originally announced July 2024.
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Ultrafast Optical Control of Rashba Interactions in a TMDC Heterostructure
Authors:
Henry Mittenzwey,
Abhijeet Kumar,
Raghav Dhingra,
Kenji Watanabe,
Takashi Taniguchi,
Cornelius Gahl,
Kirill I. Bolotin,
Malte Selig,
Andreas Knorr
Abstract:
We investigate spin relaxation dynamics of interlayer excitons in a MoSe2/MoS2 heterostructure induced by the Rashba effect. In such a system, Rashba interactions arise from an out-of-plane electric field due to photo-generated interlayer excitons inducing a phonon-assisted intravalley spin relaxation. We develop a theoretical description based on a microscopic approach to quantify the magnitude o…
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We investigate spin relaxation dynamics of interlayer excitons in a MoSe2/MoS2 heterostructure induced by the Rashba effect. In such a system, Rashba interactions arise from an out-of-plane electric field due to photo-generated interlayer excitons inducing a phonon-assisted intravalley spin relaxation. We develop a theoretical description based on a microscopic approach to quantify the magnitude of Rashba interactions and test these predictions via time-resolved Kerr rotation measurements. In agreement with the calculations, we find that the Rashba-induced intravalley spin mixing becomes the dominating spin relaxation channel above T = 50 K. Our work identifies a previously unexplored spin-depolarization channel in heterostructures which can be used for ultrafast spin manipulation.
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Submitted 6 June, 2024;
originally announced June 2024.
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Improved Three-Dimensional Reconstructions in Electron Ptychography through Defocus Series Measurements
Authors:
Marcel Schloz,
Thomas C. Pekin,
Hamish G. Brown,
Dana O. Byrne,
Bryan D. Esser,
Emmanuel Terzoudis-Lumsden,
Takashi Taniguchi,
Kenji Watanabe,
Scott D. Findlay,
Benedikt Haas,
Jim Ciston,
Christoph T. Koch
Abstract:
A detailed analysis of ptychography for 3D phase reconstructions of thick specimens is performed. We introduce multi-focus ptychography, which incorporates a 4D-STEM defocus series to enhance the quality of 3D reconstructions along the beam direction through a higher overdetermination ratio. This method is compared with established multi-slice ptychography techniques, such as conventional ptychogr…
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A detailed analysis of ptychography for 3D phase reconstructions of thick specimens is performed. We introduce multi-focus ptychography, which incorporates a 4D-STEM defocus series to enhance the quality of 3D reconstructions along the beam direction through a higher overdetermination ratio. This method is compared with established multi-slice ptychography techniques, such as conventional ptychography, regularized ptychography, and multi-mode ptychography. Additionally, we contrast multi-focus ptychography with an alternative method that uses virtual optical sectioning through a reconstructed scattering matrix ($\mathcal{S}$-matrix), which offers more precise 3D structure information compared to conventional ptychography. Our findings from multiple 3D reconstructions based on simulated and experimental data demonstrate that multi-focus ptychography surpasses other techniques, particularly in accurately reconstructing the surfaces and interface regions of thick specimens.
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Submitted 3 June, 2024;
originally announced June 2024.
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Sub-wavelength optical lattice in 2D materials
Authors:
Supratik Sarkar,
Mahmoud Jalali Mehrabad,
Daniel G. Suárez-Forero,
Liuxin Gu,
Christopher J. Flower,
Lida Xu,
Kenji Watanabe,
Takashi Taniguchi,
Suji Park,
Houk Jang,
You Zhou,
Mohammad Hafezi
Abstract:
Recently, light-matter interaction has been vastly expanded as a control tool for inducing and enhancing many emergent non-equilibrium phenomena. However, conventional schemes for exploring such light-induced phenomena rely on uniform and diffraction-limited free-space optics, which limits the spatial resolution and the efficiency of light-matter interaction. Here, we overcome these challenges usi…
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Recently, light-matter interaction has been vastly expanded as a control tool for inducing and enhancing many emergent non-equilibrium phenomena. However, conventional schemes for exploring such light-induced phenomena rely on uniform and diffraction-limited free-space optics, which limits the spatial resolution and the efficiency of light-matter interaction. Here, we overcome these challenges using metasurface plasmon polaritons (MPPs) to form a sub-wavelength optical lattice. Specifically, we report a ``nonlocal" pump-probe scheme where MPPs are excited to induce a spatially modulated AC Stark shift for excitons in a monolayer of MoSe$_2$, several microns away from the illumination spot. Remarkably, we identify nearly two orders of magnitude reduction for the required modulation power compared to the free-space optical illumination counterpart. Moreover, we demonstrate a broadening of the excitons' linewidth as a robust signature of MPP-induced periodic sub-diffraction modulation. Our results open new avenues for exploring power-efficient light-induced lattice phenomena below the diffraction limit in active chip-compatible MPP architectures.
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Submitted 1 June, 2024;
originally announced June 2024.
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Ultraclean carbon nanotube-based Josephson junctions
Authors:
S. Annabi,
E. Arrighi,
A. Peugeot,
H. Riechert,
J. Griesmar,
K. Watanabe,
T. Taniguchi,
L. Bretheau,
J. -D. Pillet
Abstract:
We present a technique for integrating ultraclean carbon nanotubes into superconducting circuits, aiming to realize Josephson junctions based on one-dimensional elementary quantum conductors. This technique primarily involves depositing the nanotube in the final step, thus preserving it from the inherent contaminations of nanofabrication and maintaining contact solely with superconducting electrod…
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We present a technique for integrating ultraclean carbon nanotubes into superconducting circuits, aiming to realize Josephson junctions based on one-dimensional elementary quantum conductors. This technique primarily involves depositing the nanotube in the final step, thus preserving it from the inherent contaminations of nanofabrication and maintaining contact solely with superconducting electrodes and a crystalline hBN substrate. Through transport measurements performed in both the normal and superconducting states, we demonstrate that our method yields high-quality junctions with Josephson energies suitable for quantum device applications, such as carbon nanotube-based superconducting qubits.
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Submitted 29 May, 2024;
originally announced May 2024.
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Charge pumping in hBN-encapsulated graphene driven by surface acoustic waves
Authors:
Dublin M. Nichols,
Jameson G. Berg,
Takashi Taniguchi,
Kenji Watanabe,
Pallavi Dhagat,
Vikram Deshpande,
Albrecht Jander,
Ethan Davis Minot
Abstract:
Surface acoustic waves (SAWs) on piezoelectric insulators can generate dynamic periodic potentials inside one-dimensional and two-dimensional materials. These periodic potentials have been utilized or proposed for various applications, including acoustoelectric charge pumping. In this study, we investigate acoustoelectric charge pumping in graphene with very low electrostatic disorder. By employin…
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Surface acoustic waves (SAWs) on piezoelectric insulators can generate dynamic periodic potentials inside one-dimensional and two-dimensional materials. These periodic potentials have been utilized or proposed for various applications, including acoustoelectric charge pumping. In this study, we investigate acoustoelectric charge pumping in graphene with very low electrostatic disorder. By employing a graphite top gate on boron-nitride-encapsulated graphene, we adjust the graphene carrier concentration over a broad range, enabling us to examine the acoustoelectric signal in both mixed-carrier and single-carrier regimes. We discuss the benefits of hBN-encapsulated graphene for charge pumping applications and introduce a model that describes the acoustoelectric signal across all carrier concentrations, including at the charge neutrality point. This quantitative model will support future SAW-enabled explorations of phenomena in low-dimensional materials and guide the design of novel SAW sensors.
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Submitted 24 May, 2024;
originally announced May 2024.
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Pick-and-place transfer of arbitrary-metal electrodes for van der Waals device fabrication
Authors:
Kaijian Xing,
Daniel McEwen,
Weiyao Zhao,
Abdulhakim Bake,
David Cortie,
Jingying Liu,
Thi-Hai-Yen Vu,
James Hone,
Alastair Stacey,
Mark T. Edmonds,
Kenji Watanabe,
Takashi Taniguchi,
Qingdong Ou,
Dong-Chen Qi,
Michael S. Fuhrer
Abstract:
Van der Waals electrode integration is a promising strategy to create near-perfect interfaces between metals and two-dimensional materials, with advantages such as eliminating Fermi-level pinning and reducing contact resistance. However, the lack of a simple, generalizable pick-and-place transfer technology has greatly hampered the wide use of this technique. We demonstrate the pick-and-place tran…
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Van der Waals electrode integration is a promising strategy to create near-perfect interfaces between metals and two-dimensional materials, with advantages such as eliminating Fermi-level pinning and reducing contact resistance. However, the lack of a simple, generalizable pick-and-place transfer technology has greatly hampered the wide use of this technique. We demonstrate the pick-and-place transfer of pre-fabricated electrodes from reusable polished hydrogenated diamond substrates without the use of any surface treatments or sacrificial layers. The technique enables transfer of large-scale arbitrary metal electrodes, as demonstrated by successful transfer of eight different elemental metals with work functions ranging from 4.22 to 5.65 eV. The mechanical transfer of metal electrodes from diamond onto van der Waals materials creates atomically smooth interfaces with no interstitial impurities or disorder, as observed with cross-sectional high-resolution transmission electron microscopy and energy-dispersive X-ray spectroscopy. As a demonstration of its device application, we use the diamond-transfer technique to create metal contacts to monolayer transition metal dichalcogenide semiconductors with high-work-function Pd, low-work-function Ti, and semi metal Bi to create n- and p-type field-effect transistors with low Schottky barrier heights. We also extend this technology to other applications such as ambipolar transistor and optoelectronics, paving the way for new device architectures and high-performance devices.
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Submitted 21 May, 2024;
originally announced May 2024.
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Optical Imaging of Flavor Order in Flat Band Graphene
Authors:
Tian Xie,
Tobias M. Wolf,
Siyuan Xu,
Zhiyuan Cui,
Richen Xiong,
Yunbo Ou,
Patrick Hays,
Ludwig F Holleis,
Yi Guo,
Owen I Sheekey,
Caitlin Patterson,
Trevor Arp,
Kenji Watanabe,
Takashi Taniguchi,
Seth Ariel Tongay,
Andrea F Young,
Allan H. MacDonald,
Chenhao Jin
Abstract:
Spin and valley flavor polarization plays a central role in the many-body physics of flat band graphene, with fermi surface reconstructions often accompanied by quantized anomalous Hall and superconducting state observed in a variety of experimental systems. Here we describe an optical technique that sensitively and selectively detects flavor textures via the exciton response of a proximal transit…
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Spin and valley flavor polarization plays a central role in the many-body physics of flat band graphene, with fermi surface reconstructions often accompanied by quantized anomalous Hall and superconducting state observed in a variety of experimental systems. Here we describe an optical technique that sensitively and selectively detects flavor textures via the exciton response of a proximal transition metal dichalcogenide layer. Through a systematic study of rhombohedral and rotationally faulted graphene bilayers and trilayers, we show that when the semiconducting dichalcogenide is in direct contact with the graphene, the exciton response is most sensitive to the large momentum rearrangement of the Fermi surface, providing information that is distinct from and complementary to electrical compressibility measurements. The wide-field imaging capability of optical probes allows us to obtain spatial maps of flavor orders with high throughput, and with broad temperature and device compatibility. Our work paves the way for optical probing and imaging of flavor orders in flat band graphene systems.
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Submitted 13 May, 2024;
originally announced May 2024.
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Characterization of a graphene-hBN superlattice field effect transistor
Authors:
Won Beom Choi,
Youngoh Son,
Hangyeol Park,
Yungi Jeong,
Junhyeok Oh,
K. Watanabe,
T. Taniguchi,
Joonho Jang
Abstract:
Graphene is a unique platform to naturally host a high quality 2D electron system. With hBN encapsulation to protect the graphene from the noisy environment, it has a potential to realize ultrahigh performance nanodevices, such as photodiodes and transistors. However, absence of a band gap at Dirac point poses challenges in using the system as a useful transistor. In this study, we investigate the…
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Graphene is a unique platform to naturally host a high quality 2D electron system. With hBN encapsulation to protect the graphene from the noisy environment, it has a potential to realize ultrahigh performance nanodevices, such as photodiodes and transistors. However, absence of a band gap at Dirac point poses challenges in using the system as a useful transistor. In this study, we investigate the functionality of a hBN-aligned monolayer graphene as a field effect transistor (FET). By precisely aligning the hBN and graphene, the band gaps open at the first Dirac point and at the hole-doped induced Dirac point via an interfacial moire potential. To characterize as a submicron scale FET, we fabricated a global bottom gate to tune the density of a conducting channel and a local top gate to switch-off the channel, demonstrating that this system can be tuned at an optimal on/off ratio regime by controlling the gates separately. These findings will present a useful reference point for further development of the FETs based on graphene heterostructures.
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Submitted 10 May, 2024;
originally announced May 2024.
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Robust field-free switching using large unconventional spin-orbit torque in an all-van der Waals heterostructure
Authors:
Yiyang Zhang,
Xiaolin Ren,
Ruizi Liu,
Zehan Chen,
Xuezhao Wu,
Jie Pang,
Wei Wang,
Guibin Lan,
Kenji Watanabe,
Takashi Taniguchi,
Youguo Shi,
Guoqiang Yu,
Qiming Shao
Abstract:
The emerging all-van der Waals (vdW) magnetic heterostructure provides a new platform to control the magnetization by the electric field beyond the traditional spintronics devices. One promising strategy is using unconventional spin-orbit torque (SOT) exerted by the out-of-plane polarized spin current to enable deterministic magnetization switching and enhance the switching efficiency. However, in…
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The emerging all-van der Waals (vdW) magnetic heterostructure provides a new platform to control the magnetization by the electric field beyond the traditional spintronics devices. One promising strategy is using unconventional spin-orbit torque (SOT) exerted by the out-of-plane polarized spin current to enable deterministic magnetization switching and enhance the switching efficiency. However, in all-vdW heterostructures, large unconventional SOT remains elusive and the robustness of the field-free switching against external magnetic field hasn't been examined, which hinder further applications. Here we demonstrate the field-free switching in an all-vdW heterostructure combining a type-II Weyl semimetal TaIrTe4 and above-room-temperature ferromagnet Fe3GaTe2. The fully field-free switching can be achieved at 2.56 x 10^10 A per m2 at 300K and a large SOT efficiency of the out-of-plane polarized spin current generated by TaIrTe4 is determined to be 0.37. Moreover, we find that the switching polarity cannot be changed until the external in-plane magnetic field reaches 252mT, indicating a robust switching against the magnetic field. The numerical simulation suggests the large unconventional SOT reduces the switching current density and enhances the robustness of the switching. Our work shows that all-vdW heterostructures are promising candidates for future highly efficient and stable SOT-based devices.
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Submitted 10 May, 2024;
originally announced May 2024.
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Motion of 2D exciton in momentum space leads to pseudospin distribution narrowing on the Bloch Sphere
Authors:
Garima Gupta,
Kenji Watanabe,
Takashi Taniguchi,
Kausik Majumdar
Abstract:
Motional narrowing implies narrowing induced by motion, for example, in nuclear resonance, the thermally induced random motion of the nuclei in an inhomogeneous environment leads to counter-intuitive narrowing of the resonance line. Similarly, the excitons in monolayer semiconductors experience magnetic inhomogeneity: the electron-hole spin-exchange interaction manifests as an in-plane pseudo-magn…
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Motional narrowing implies narrowing induced by motion, for example, in nuclear resonance, the thermally induced random motion of the nuclei in an inhomogeneous environment leads to counter-intuitive narrowing of the resonance line. Similarly, the excitons in monolayer semiconductors experience magnetic inhomogeneity: the electron-hole spin-exchange interaction manifests as an in-plane pseudo-magnetic field with a periodically varying orientation inside the exciton band. The excitons undergo random momentum scattering and pseudospin precession repeatedly in this inhomogeneous magnetic environment - typically resulting in fast exciton depolarization. On the contrary, we show that such magnetic inhomogeneity averages out at high scattering rate due to motional narrowing. Physically, a faster exciton scattering leads to a narrower pseudospin distribution on the Bloch sphere, implying a nontrivial improvement in exciton polarization. The in-plane nature of the pseudo-magnetic field enforces a contrasting scattering dependence between the circularly and linearly polarized excitons - providing a spectroscopic way to gauge the sample quality.
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Submitted 23 April, 2024;
originally announced April 2024.
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Combined Pre-Supernova Alert System with Kamland and Super-Kamiokande
Authors:
KamLAND,
Super-Kamiokande Collaborations,
:,
Seisho Abe,
Minori Eizuka,
Sawako Futagi,
Azusa Gando,
Yoshihito Gando,
Shun Goto,
Takahiko Hachiya,
Kazumi Hata,
Koichi Ichimura,
Sei Ieki,
Haruo Ikeda,
Kunio Inoue,
Koji Ishidoshiro,
Yuto Kamei,
Nanami Kawada,
Yasuhiro Kishimoto,
Masayuki Koga,
Maho Kurasawa,
Tadao Mitsui,
Haruhiko Miyake,
Daisuke Morita,
Takeshi Nakahata
, et al. (290 additional authors not shown)
Abstract:
Preceding a core-collapse supernova, various processes produce an increasing amount of neutrinos of all flavors characterized by mounting energies from the interior of massive stars. Among them, the electron antineutrinos are potentially detectable by terrestrial neutrino experiments such as KamLAND and Super-Kamiokande via inverse beta decay interactions. Once these pre-supernova neutrinos are ob…
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Preceding a core-collapse supernova, various processes produce an increasing amount of neutrinos of all flavors characterized by mounting energies from the interior of massive stars. Among them, the electron antineutrinos are potentially detectable by terrestrial neutrino experiments such as KamLAND and Super-Kamiokande via inverse beta decay interactions. Once these pre-supernova neutrinos are observed, an early warning of the upcoming core-collapse supernova can be provided. In light of this, KamLAND and Super-Kamiokande, both located in the Kamioka mine in Japan, have been monitoring pre-supernova neutrinos since 2015 and 2021, respectively. Recently, we performed a joint study between KamLAND and Super-Kamiokande on pre-supernova neutrino detection. A pre-supernova alert system combining the KamLAND detector and the Super-Kamiokande detector was developed and put into operation, which can provide a supernova alert to the astrophysics community. Fully leveraging the complementary properties of these two detectors, the combined alert is expected to resolve a pre-supernova neutrino signal from a 15 M$_{\odot}$ star within 510 pc of the Earth, at a significance level corresponding to a false alarm rate of no more than 1 per century. For a Betelgeuse-like model with optimistic parameters, it can provide early warnings up to 12 hours in advance.
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Submitted 1 July, 2024; v1 submitted 15 April, 2024;
originally announced April 2024.
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The Defects Genome of 2D Janus Transition Metal Dichalcogenides
Authors:
Mohammed Sayyad,
Jan Kopaczek,
Carmem M. Gilardoni,
Weiru Chen,
Yihuang Xiong,
Shize Yang,
Kenji Watanabe,
Takashi Taniguchi,
Robert Kudrawiec,
Geoffroy Hautier,
Mete Atature,
Sefaattin Tongay
Abstract:
Two-dimensional (2D) Janus Transition Metal Dichalcogenides (TMDs) have attracted much interest due to their exciting quantum properties arising from their unique two-faced structure, broken-mirror symmetry, and consequent colossal polarisation field within the monolayer. While efforts have been made to achieve high-quality Janus monolayers, the existing methods rely on highly energetic processes…
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Two-dimensional (2D) Janus Transition Metal Dichalcogenides (TMDs) have attracted much interest due to their exciting quantum properties arising from their unique two-faced structure, broken-mirror symmetry, and consequent colossal polarisation field within the monolayer. While efforts have been made to achieve high-quality Janus monolayers, the existing methods rely on highly energetic processes that introduce unwanted grain-boundary and point defects with still unexplored effects on the material's structural and excitonic properties Through High-resolution scanning transmission electron microscopy (HRSTEM), density functional theory (DFT), and optical spectroscopy measurements; this work introduces the most encountered and energetically stable point defects. It establishes their impact on the material's optical properties. HRSTEM studies show that the most energetically stable point defects are single (Vs and Vse) and double chalcogen vacancy (Vs-Vse), interstitial defects (Mi), and metal impurities (MW) and establish their structural characteristics. DFT further establishes their formation energies and related localized bands within the forbidden band. Cryogenic excitonic studies on h-BN-encapsulated Janus monolayers offer a clear correlation between these structural defects and observed emission features, which closely align with the results of the theory. The overall results introduce the defect genome of Janus TMDs as an essential guideline for assessing their structural quality and device properties.
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Submitted 10 March, 2024;
originally announced March 2024.
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Nonlinear spectroscopy of semiconductor moiré materials
Authors:
B. Evrard,
A. Ghita,
T. Uto,
L. Ciorciaro,
K. Watanabe,
T. Taniguchi,
M. Kroner,
A. İmamoğlu
Abstract:
We use time-resolved nonlinear pump--probe measurements to reveal features of semiconductor moiré materials not accessible to linear spectroscopy. With an intense, red-detuned pump pulse, we generate a high density of virtual excitons or exciton--polarons in various moiré minibands. A broadband probe pulse in turn measures the response of all optical resonances induced by the pump-generated excita…
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We use time-resolved nonlinear pump--probe measurements to reveal features of semiconductor moiré materials not accessible to linear spectroscopy. With an intense, red-detuned pump pulse, we generate a high density of virtual excitons or exciton--polarons in various moiré minibands. A broadband probe pulse in turn measures the response of all optical resonances induced by the pump-generated excitations. We generically observe a coherent blue shift originating from contact-like exciton--exciton interactions. At charge neutrality, these measurements allow us to assess the spatial overlap between different optical excitations: in particular, we observe signatures of a bound biexciton state between two different moire exciton modes. For integer fillings $ν=2$ and $ν=3$ of the moiré lattice with electrons, the correlated Mott state results in a suppression of the exciton--polaron interactions, providing a nonlinear optical signature of electronic incompressibility. In stark contrast, for lower electron fillings $ν< 2$, the light shift of the attractive polaron resonance is electron density independent. Deeply localized moiré polarons are thus akin to an ensemble of non-interacting two-level atoms, subject to the single-emitter ac Stark effect. Finally, tuning the pump laser on resonance with the attractive polaron for $ν< 2$, we demonstrate the filling of the moiré lattice with localized polarons and thereby realize a nonequilibrium Bose--Fermi mixture in moiré flat bands.
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Submitted 26 February, 2024;
originally announced February 2024.
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Metasurface of strongly coupled excitons and nanoplasmonic arrays
Authors:
Farsane Tabataba-Vakili,
Lukas Krelle,
Lukas Husel,
Huy P. G. Nguyen,
Zhijie Li,
Ismail Bilgin,
Kenji Watanabe,
Takashi Taniguchi,
Alexander Högele
Abstract:
Metasurfaces allow to manipulate light at the nanoscale. Integrating metasurfaces with transition metal dichalcogenide monolayers provides additional functionality to ultrathin optics, including tunable optical properties with enhanced light-matter interactions. In this work, we demonstrate the realization of a polaritonic metasurface utilizing the sizable light-matter coupling of excitons in mono…
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Metasurfaces allow to manipulate light at the nanoscale. Integrating metasurfaces with transition metal dichalcogenide monolayers provides additional functionality to ultrathin optics, including tunable optical properties with enhanced light-matter interactions. In this work, we demonstrate the realization of a polaritonic metasurface utilizing the sizable light-matter coupling of excitons in monolayer WSe2 and the collective lattice resonances of nanoplasmonic gold arrays. To this end, we developed a novel fabrication method to integrate gold nanodisk arrays in hexagonal boron nitride and thus simultaneously ensure spectrally narrow exciton transitions and their immediate proximity to the near-field of array surface lattice resonances. In the regime of strong light-matter coupling, the resulting van der Waals metasurface exhibits all key characteristics of lattice polaritons, with a directional and linearly-polarized far-field emission profile dictated by the underlying nanoplasmonic lattice. Our work can be straightforwardly adapted to other lattice geometries, establishing structured van der Waals metasurfaces as means to engineer polaritonic lattices.
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Submitted 30 April, 2024; v1 submitted 14 February, 2024;
originally announced February 2024.
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Interplay of plasmonics and strain for Hexagonal Boron Nitride emission engineering
Authors:
Anuj Kumar Singh,
Utkarsh,
Pablo Tieben,
Kishor Kumar Mandal,
Brijesh Kumar,
Rishabh Vij,
Amrita Majumder,
Ikshvaku Shyam,
Shagun Kumar,
Kenji Watanabe,
Takashi Taniguchi,
Venu Gopal Achanta,
Andreas Schell,
Anshuman Kumar
Abstract:
In the realm of quantum information and sensing, there has been substantial interest in the single-photon emission associated with defects in hexagonal boron nitride (hBN). With the goal of producing deterministic emission centers, in this work, we present a platform for engineering emission in hBN integrated with gold truncated nanocone structures. Our findings highlights that, the activation of…
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In the realm of quantum information and sensing, there has been substantial interest in the single-photon emission associated with defects in hexagonal boron nitride (hBN). With the goal of producing deterministic emission centers, in this work, we present a platform for engineering emission in hBN integrated with gold truncated nanocone structures. Our findings highlights that, the activation of emission is due to the truncated gold nanocones. Furthermore, we measure the quantum characteristics of this emission and find that while our system demonstrates support for single-photon emission, the origin of this emission remains ambiguous. Specifically, it is unclear whether the emission arises from defects generated by the induced strain or from alternative defect mechanisms. This uncertainty stems from the fluorescence properties inherent to gold, complicating our definitive attribution of the quantum emission source. To provide a rigorous theoretical foundation, we elucidate the effects of strain via the Kirchhoff-Love theory. Additionally, the enhancements observed due to plasmonic effects are comprehensively explained through the resolution of Maxwell's equations. This study will be useful for the development of deterministic and tunable single photonic sources in two dimensional materials and their integration with plasmonic platforms.
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Submitted 21 January, 2024;
originally announced January 2024.
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Room-Temperature Plasmon-Assisted Resonant THz Detection in Single-layer Graphene Transistors
Authors:
José M. Caridad,
Óscar Castelló,
Sofía M. López Baptista,
Takashi Taniguchi,
Kenji Watanabe,
Hartmut G. Roskos,
Juan A. Delgado-Notario
Abstract:
Frequency-selective or even frequency-tunable Terahertz (THz) photodevices are critical components for many technological applications that require nanoscale manipulation, control and confinement of light. Within this context, gate-tunable phototransistors based on plasmonic resonances are often regarded as the most promising devices for frequency-selective detection of THz fields. The exploitatio…
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Frequency-selective or even frequency-tunable Terahertz (THz) photodevices are critical components for many technological applications that require nanoscale manipulation, control and confinement of light. Within this context, gate-tunable phototransistors based on plasmonic resonances are often regarded as the most promising devices for frequency-selective detection of THz fields. The exploitation of constructive interference of plasma waves in such detectors not only promises frequency selectivity, but also a pronounced sensitivity enhancement at the target frequencies. However, clear signatures of plasmon-assisted resonances in THz detectors have been only revealed at cryogenic temperatures so far, and remain unobserved at application-relevant room-temperature conditions. In this work, we demonstrate the sought-after room-temperature resonant detection of THz radiation in short-channel gated photodetectors made from high-quality single-layer graphene. The survival of this intriguing resonant regime at room-temperature ultimately relies on the weak intrinsic electron-phonon scattering in graphene, which avoids the damping of the plasma oscillations.
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Submitted 8 January, 2024;
originally announced January 2024.
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Nano-Imaging of Landau-Phonon Polaritons in Dirac Heterostructures
Authors:
Lukas Wehmeier,
Suheng Xu,
Rafael A. Mayer,
Brian Vermilyea,
Makoto Tsuneto,
Michael Dapolito,
Rui Pu,
Zengyi Du,
Xinzhong Chen,
Wenjun Zheng,
Ran Jing,
Zijian Zhou,
Kenji Watanabe,
Takashi Taniguchi,
Adrian Gozar,
Qiang Li,
Alexey B. Kuzmenko,
G. Lawrence Carr,
Xu Du,
Michael M. Fogler,
D. N. Basov,
Mengkun Liu
Abstract:
Polaritons are light-matter quasiparticles that govern the optical response of quantum materials and enable their nanophotonic applications. We have studied a new type of polaritons arising in magnetized graphene encapsulated in hexagonal boron nitride (hBN). These polaritons stem from hybridization of Dirac magnetoexciton modes of graphene with waveguide phonon modes of hBN crystals. We refer to…
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Polaritons are light-matter quasiparticles that govern the optical response of quantum materials and enable their nanophotonic applications. We have studied a new type of polaritons arising in magnetized graphene encapsulated in hexagonal boron nitride (hBN). These polaritons stem from hybridization of Dirac magnetoexciton modes of graphene with waveguide phonon modes of hBN crystals. We refer to these quasiparticles as the Landau-phonon polaritons (LPPs). Using infrared magneto nanoscopy, we imaged LPPs and controlled their real-space propagation by varying the magnetic field. These LLPs have large in-plane momenta and are not bound by the conventional optical selection rules, granting us access to the "forbidden" inter-Landau level transitions (ILTs). We observed avoided crossings in the LPP dispersion - a hallmark of the strong coupling regime - occurring when the magnetoexciton and hBN phonon frequencies matched. Our LPP-based nanoscopy also enabled us to resolve two fundamental many-body effects: the graphene Fermi velocity renormalization and ILT-dependent magnetoexciton binding energies. These results indicate that magnetic-field-tuned Dirac heterostructures are promising platforms for precise nanoscale control and sensing of light-matter interaction.
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Submitted 21 December, 2023;
originally announced December 2023.
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Ultra-broadband bright light emission from a one-dimensional inorganic van der Waals material
Authors:
Fateme Mahdikhany,
Sean Driskill,
Jeremy G. Philbrick,
Davoud Adinehloo,
Michael R. Koehler,
David G. Mandrus,
Takashi Taniguchi,
Kenji Watanabe,
Brian J. LeRoy,
Oliver L. A. Monti,
Vasili Perebeinos,
Tai Kong,
John R. Schaibley
Abstract:
One-dimensional (1D) van der Waals materials have emerged as an intriguing playground to explore novel electronic and optical effects. We report on inorganic one-dimensional SbPS4 nanotubes bundles obtained via mechanical exfoliation from bulk crystals. The ability to mechanically exfoliate SbPS4 nanobundles offers the possibility of applying modern 2D material fabrication techniques to create mix…
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One-dimensional (1D) van der Waals materials have emerged as an intriguing playground to explore novel electronic and optical effects. We report on inorganic one-dimensional SbPS4 nanotubes bundles obtained via mechanical exfoliation from bulk crystals. The ability to mechanically exfoliate SbPS4 nanobundles offers the possibility of applying modern 2D material fabrication techniques to create mixed-dimensional van der Waals heterostructures. We find that SbPS4 can readily be exfoliated to yield long (> 10 μm) nanobundles with thicknesses that range from of 1.3 - 200 nm. We investigated the optical response of semiconducting SbPS4 nanobundles and discovered that upon excitation with blue light, they emit bright and ultra-broadband red light with a quantum yield similar to that of hBN-encapsulated MoSe2. We discovered that the ultra-broadband red light emission is a result of a large ~1 eV exciton binding energy and a ~200 meV exciton self-trapping energy, unprecedented in previous material studies. Due to the bright and ultra-broadband light emission, we believe that this class of inorganic 1D van der Waals semiconductors has numerous potential applications including on-chip tunable nanolasers, and applications that require ultra-violet to visible light conversion such as lighting and sensing. Overall, our findings open avenues for harnessing the unique characteristics of these nanomaterials, advancing both fundamental research and practical optoelectronic applications.
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Submitted 12 December, 2023;
originally announced December 2023.
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Electrical control and transport of tightly bound interlayer excitons in a MoSe2/hBN/MoSe2 heterostructure
Authors:
Lifu Zhang,
Ruihao Ni,
Liuxin Gu,
Ming Xie,
Suji Park,
Houk Jang,
Takashi Taniguchi,
Kenji Watanabe,
You Zhou
Abstract:
Controlling interlayer excitons in van der Waals heterostructures holds promise for exploring Bose-Einstein condensates and developing novel optoelectronic applications, such as excitonic integrated circuits. Despite intensive studies, several key fundamental properties of interlayer excitons, such as their binding energies and interactions with charges, remain not well understood. Here we report…
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Controlling interlayer excitons in van der Waals heterostructures holds promise for exploring Bose-Einstein condensates and developing novel optoelectronic applications, such as excitonic integrated circuits. Despite intensive studies, several key fundamental properties of interlayer excitons, such as their binding energies and interactions with charges, remain not well understood. Here we report the formation of momentum-direct interlayer excitons in a high-quality MoSe2/hBN/MoSe2 heterostructure under an electric field, characterized by bright photoluminescence (PL) emission with high quantum yield and a narrow linewidth of less than 4 meV. These interlayer excitons show electrically tunable emission energy spanning ~180 meV through the Stark effect, and exhibit a sizable binding energy of ~81 meV in the intrinsic regime, along with trion binding energies of a few millielectronvolts. Remarkably, we demonstrate the long-range transport of interlayer excitons with a characteristic diffusion length exceeding ten micrometers, which can be attributed, in part, to their dipolar repulsive interactions. Spatially and polarization-resolved spectroscopic studies reveal rich exciton physics in the system, such as valley polarization, local trapping, and the possible existence of dark interlayer excitons. The formation and transport of tightly bound interlayer excitons with narrow linewidth, coupled with the ability to electrically manipulate their properties, open exciting new avenues for exploring quantum many-body physics, including excitonic condensate and superfluidity, and for developing novel optoelectronic devices, such as exciton and photon routers.
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Submitted 5 April, 2024; v1 submitted 4 December, 2023;
originally announced December 2023.
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Nanoscale confinement and control of excitonic complexes in a monolayer WSe2
Authors:
Hyowon Moon,
Lukas Mennel,
Chitraleema Chakraborty,
Cheng Peng,
Jawaher Almutlaq,
Takashi Taniguchi,
Kenji Watanabe,
Dirk Englund
Abstract:
Nanoscale control and observation of photophysical processes in semiconductors is critical for basic understanding and applications from optoelectronics to quantum information processing. In particular, there are open questions and opportunities in controlling excitonic complexes in two-dimensional materials such as excitons, trions or biexcitons. However, neither conventional diffraction-limited…
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Nanoscale control and observation of photophysical processes in semiconductors is critical for basic understanding and applications from optoelectronics to quantum information processing. In particular, there are open questions and opportunities in controlling excitonic complexes in two-dimensional materials such as excitons, trions or biexcitons. However, neither conventional diffraction-limited optical spectroscopy nor lithography-limited electric control provides a proper tool to investigate these quasiparticles at the nanometer-scale at cryogenic temperature. Here, we introduce a cryogenic capacitive confocal optical microscope (C3OM) as a tool to study quasiparticle dynamics at the nanometer scale. Using a conductive atomic force microscope (AFM) tip as a gate electrode, we can modulate the electronic doping at the nanometer scale in WSe2 at 4K. This tool allows us to modulate with nanometer-scale confinement the exciton and trion peaks, as well a distinct photoluminescence line associated with a larger excitonic complex that exhibits distinctive nonlinear optical response. Our results demonstrate nanoscale confinement and spectroscopy of exciton complexes at arbitrary positions, which should prove an important tool for quantitative understanding of complex optoelectronic properties in semiconductors as well as for applications ranging from quantum spin liquids to superresolution measurements to control of quantum emitters.
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Submitted 30 November, 2023;
originally announced November 2023.
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Ultrafast Opto-Electronic and Thermal Tuning of Third-Harmonic Generation in a Graphene Field Effect Transistor
Authors:
Omid Ghaebi,
Sebastian Klimmer,
Nele Tornow,
Niels Buijssen,
Takashi Taniguchi,
Kenji Watanabe,
Andrea Tomadin,
Habib Rostami,
Giancarlo Soavi
Abstract:
Graphene is a unique platform for tunable opto-electronic applications thanks to its linear band dispersion, which allows electrical control of resonant light-matter interactions. Tuning the nonlinear optical response of graphene is possible both electrically and in an all-optical fashion, but each approach involves a trade-off between speed and modulation depth. Here, we combine lattice temperatu…
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Graphene is a unique platform for tunable opto-electronic applications thanks to its linear band dispersion, which allows electrical control of resonant light-matter interactions. Tuning the nonlinear optical response of graphene is possible both electrically and in an all-optical fashion, but each approach involves a trade-off between speed and modulation depth. Here, we combine lattice temperature, electron doping, and all-optical tuning of third-harmonic generation in a hBN-encapsulated graphene opto-electronic device and demonstrate up to 85% modulation depth along with gate-tunable ultrafast dynamics. These results arise from the dynamic changes in the transient electronic temperature combined with Pauli blocking induced by the out-of-equilibrium chemical potential. Our work provides a detailed description of the transient nonlinear optical and electronic response of graphene, which is crucial for the design of nanoscale and ultrafast optical modulators, detectors and frequency converters.
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Submitted 28 November, 2023;
originally announced November 2023.
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On-chip multi-degree-of-freedom control of two-dimensional quantum and nonlinear materials
Authors:
Haoning Tang,
Yiting Wang,
Xueqi Ni,
Kenji Watanabe,
Takashi Taniguchi,
Pablo Jarillo-Herrero,
Shanhui Fan,
Eric Mazur,
Amir Yacoby,
Yuan Cao
Abstract:
Two-dimensional materials (2DM) and their derived heterostructures have electrical and optical properties that are widely tunable via several approaches, most notably electrostatic gating and interfacial engineering such as twisting. While electrostatic gating is simple and has been ubiquitously employed on 2DM, being able to tailor the interfacial properties in a similar real-time manner represen…
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Two-dimensional materials (2DM) and their derived heterostructures have electrical and optical properties that are widely tunable via several approaches, most notably electrostatic gating and interfacial engineering such as twisting. While electrostatic gating is simple and has been ubiquitously employed on 2DM, being able to tailor the interfacial properties in a similar real-time manner represents the next leap in our ability to modulate the underlying physics and build exotic devices with 2DM. However, all existing approaches rely on external machinery such as scanning microscopes, which often limit their scope of applications, and there is currently no means of tuning a 2D interface that has the same accessibility and scalability as electrostatic gating. Here, we demonstrate the first on-chip platform designed for 2D materials with in situ tunable interfacial properties, utilizing a microelectromechanical system (MEMS). Each compact, cost-effective, and versatile device is a standalone micromachine that allows voltage-controlled approaching, twisting, and pressurizing of 2DM with high accuracy. As a demonstration, we engineer synthetic topological singularities, known as merons, in the nonlinear optical susceptibility of twisted hexagonal boron nitride (h-BN), via simultaneous control of twist angle and interlayer separation. The chirality of the resulting moire pattern further induces a strong circular dichroism in the second-harmonic generation. A potential application of this topological nonlinear susceptibility is to create integrated classical and quantum light sources that have widely and real-time tunable polarization. Our invention pushes the boundary of available technologies for manipulating low-dimensional quantum materials, which in turn opens up the gateway for designing future hybrid 2D-3D devices for condensed-matter physics, quantum optics, and beyond.
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Submitted 14 June, 2024; v1 submitted 20 November, 2023;
originally announced November 2023.
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Search for Charged Excited States of Dark Matter with KamLAND-Zen
Authors:
KamLAND-Zen collaboration,
:,
S. Abe,
M. Eizuka,
S. Futagi,
A. Gando,
Y. Gando,
S. Goto,
T. Hachiya,
K. Hata,
K. Hosokawa,
K. Ichimura,
S. Ieki,
H. Ikeda,
K. Inoue,
K. Ishidoshiro,
Y. Kamei,
N. Kawada,
Y. Kishimoto,
M. Koga,
M. Kurasawa,
T. Mitsui,
H. Miyake,
D. Morita,
T. Nakahata
, et al. (44 additional authors not shown)
Abstract:
Particle dark matter could belong to a multiplet that includes an electrically charged state. WIMP dark matter ($χ^{0}$) accompanied by a negatively charged excited state ($χ^{-}$) with a small mass difference (e.g. $<$ 20 MeV) can form a bound-state with a nucleus such as xenon. This bound-state formation is rare and the released energy is $\mathcal{O}(1-10$) MeV depending on the nucleus, making…
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Particle dark matter could belong to a multiplet that includes an electrically charged state. WIMP dark matter ($χ^{0}$) accompanied by a negatively charged excited state ($χ^{-}$) with a small mass difference (e.g. $<$ 20 MeV) can form a bound-state with a nucleus such as xenon. This bound-state formation is rare and the released energy is $\mathcal{O}(1-10$) MeV depending on the nucleus, making large liquid scintillator detectors suitable for detection. We searched for bound-state formation events with xenon in two experimental phases of the KamLAND-Zen experiment, a xenon-doped liquid scintillator detector. No statistically significant events were observed. For a benchmark parameter set of WIMP mass $m_{χ^{0}} = 1$ TeV and mass difference $Δm = 17$ MeV, we set the most stringent upper limits on the recombination cross section times velocity $\langleσv\rangle$ and the decay-width of $χ^{-}$ to $9.2 \times 10^{-30}$ ${\rm cm^3/s}$ and $8.7 \times 10^{-14}$ GeV, respectively at 90% confidence level.
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Submitted 3 July, 2024; v1 submitted 16 November, 2023;
originally announced November 2023.
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On-chip transfer of ultrashort graphene plasmon wavepackets using terahertz electronics
Authors:
Katsumasa Yoshioka,
Guillaume Bernard,
Taro Wakamura,
Masayuki Hashisaka,
Ken-ichi Sasaki,
Satoshi Sasaki,
Kenji Watanabe,
Takashi Taniguchi,
Norio Kumada
Abstract:
Steering transport of ultrashort polariton wavepackets is essential for achieving on-chip integrated nanocircuits with tightly confined electromagnetic fields towards ultrafast information processing. However, conventional optical techniques have struggled to integrate the necessary components for transferring polariton signals. Here, we address this challenge by electrically generating, manipulat…
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Steering transport of ultrashort polariton wavepackets is essential for achieving on-chip integrated nanocircuits with tightly confined electromagnetic fields towards ultrafast information processing. However, conventional optical techniques have struggled to integrate the necessary components for transferring polariton signals. Here, we address this challenge by electrically generating, manipulating, and reading out terahertz graphene plasmon-polariton wavepackets on-chip. By injecting an electrical pulse into graphene via an ohmic contact, we achieve coherent conversion of the pulse into a plasmon wavepacket exhibiting a pulse duration of 1.2 ps and extreme three-dimensional spatial confinement within a volume of $2.1 \times 10^{-18} m^3$. We reveal the transport properties of plasmons along graphene ribbons in different dielectric environments, providing a basis for designing graphene plasmonic circuits. Furthermore, we find that the conversion efficiency between the electrical pulses and plasmon wavepackets reaches ~30% thanks to the absence of a momentum mismatch. With unprecedented controllability, our platform represents a significant advance in on-chip handling of plasmonic signals in various van der Waals heterostructures.
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Submitted 5 November, 2023;
originally announced November 2023.
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Floquet engineering in the presence of optically excited carriers
Authors:
Mitchell A. Conway,
Jonathan O. Tollerud,
Thi-Hai-Yen Vu,
Kenji Watanabe,
Takashi Taniguchi,
Michael S. Fuhrer,
Mark T. Edmonds,
Jeffrey A. Davis
Abstract:
Floquet engineering provides an optical means to manipulate electronic bandstructures, however, carriers excited by the pump field can lead to an effective heating, and can obscure measurement of the band changes. A recent demonstration of the effects of Floquet engineering on a coherent ensemble of excitons in monolayer WS$_2$ proved particularly sensitive to non-adiabatic effects, while still be…
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Floquet engineering provides an optical means to manipulate electronic bandstructures, however, carriers excited by the pump field can lead to an effective heating, and can obscure measurement of the band changes. A recent demonstration of the effects of Floquet engineering on a coherent ensemble of excitons in monolayer WS$_2$ proved particularly sensitive to non-adiabatic effects, while still being able to accurately resolve bandstructure changes. Here, we drive an AC-Stark effect in monolayer WS$_2$ using pulses with constant fluence but varying pulse duration (from 25-235~fs). With shorter pump pulses, the corresponding increase in peak intensity introduces additional carriers via two-photon absorption, leading to additional decoherence and peak broadening (which makes it difficult to resolve the AC-Stark shift). We use multidimensional coherent spectroscopy to create a coherent ensemble of excitons in monolayer WS$_2$ and measure the evolution of the coherence throughout the duration of the Floquet pump pulse. Changes to the amplitude of the macroscopic coherence quantifies the additional broadening. At the same time, the evolution of the average phase allows the instantaneous changes to the bandstructure to be quantified, and is not impacted by the additional broadening. This approach to measuring the evolution of Floquet-Bloch states demonstrates a means to quantify effective heating and non-adiabaticity caused by excited carriers, while at the same time resolving the coherent evolution of the bandstructure.
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Submitted 1 November, 2023;
originally announced November 2023.
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Nanoparticle Stressor-Induced Single-photon Sources in Monolayer WS$_2$ Emitting into a Narrowband Visible Spectral Range
Authors:
J. Thoppil S,
Y. Waheed,
S. Shit,
I. D. Prasad,
K. Watanabe,
T. Taniguchi,
S. Kumar
Abstract:
A van der Waals heterostructure containing an atomically thin monolayer transition-metal dichalcogenide as a single-photon emitting layer is emerging as an intriguing solid-state quantum-photonic platform. Here, we report the utilization of spin-coating of silica nanoparticles for deterministically creating the spectrally isolated, energetically stable, and narrow-linewidth single-photon emitters…
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A van der Waals heterostructure containing an atomically thin monolayer transition-metal dichalcogenide as a single-photon emitting layer is emerging as an intriguing solid-state quantum-photonic platform. Here, we report the utilization of spin-coating of silica nanoparticles for deterministically creating the spectrally isolated, energetically stable, and narrow-linewidth single-photon emitters in ML-WS$_2$. We also demonstrate that long-duration low-temperature annealing of the photonic heterostructure in the vacuum removes the energetically unstable emitters that are present due to fabrication-associated residue and lead to the emission of single-photons in a <25 nm narrowband visible spectral range centered at $\sim$620 nm. This work may pave the way toward realizing a hybrid-quantum-photonic platform containing a van der Waals heterostructure/device and an atomic-vapor system emitting/absorbing in the same visible spectral range.
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Submitted 11 October, 2023;
originally announced October 2023.
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Terahertz phonon engineering and spectroscopy with van der Waals heterostructures
Authors:
Yoseob Yoon,
Zheyu Lu,
Can Uzundal,
Ruishi Qi,
Wenyu Zhao,
Sudi Chen,
Qixin Feng,
Kenji Watanabe,
Takashi Taniguchi,
Michael F. Crommie,
Feng Wang
Abstract:
Phononic engineering at GHz frequencies form the foundation of microwave acoustic filters, high-speed acousto-optic modulators, and quantum transducers. THz phononic engineering could lead to acoustic filters and modulators at higher bandwidth and speed, as well as quantum circuits operating at higher temperatures. It can also enable new ways to manipulate and control thermal transport, as THz aco…
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Phononic engineering at GHz frequencies form the foundation of microwave acoustic filters, high-speed acousto-optic modulators, and quantum transducers. THz phononic engineering could lead to acoustic filters and modulators at higher bandwidth and speed, as well as quantum circuits operating at higher temperatures. It can also enable new ways to manipulate and control thermal transport, as THz acoustic phonons are the main heat carriers in nonmetallic solids. Despite its potential, methods for engineering THz phonons have been little explored due to the challenges of achieving the required material control at sub-nanometer precision and efficient phonon coupling at THz frequencies. Here, we demonstrate efficient generation, detection, and manipulation of THz phonons through precise integration of atomically thin layers in van der Waals heterostructures. We employ few-layer graphene as an ultrabroadband transducer, converting fs near-infrared pulses to broadband acoustic phonon pulses with spectral content up to 3 THz. A single layer of WSe$_2$ is used as a sensor, where high-fidelity readout is enabled by the exciton-phonon coupling and strong light-matter interactions. By combining these capabilities in a single van der Waals heterostructure and detecting responses to incident mechanical waves, we performed THz phononic spectroscopy, similar to conventional optical spectroscopy which detects responses to incident electromagnetic waves. We demonstrate high-Q THz phononic cavities using hBN stacks. We further show that a single layer of WSe$_2$ embedded in hBN can efficiently block the transmission of THz phonons. By comparing our measurements to a nanomechanical model, we obtain the important force constants at the heterointerfaces. Our results could enable THz phononic metamaterials based on van der Waals heterostructures, as well as novel routes for thermal engineering.
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Submitted 7 October, 2023;
originally announced October 2023.
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Resonant band hybridization in alloyed transition metal dichalcogenide heterobilayers
Authors:
Alessandro Catanzaro,
Armando Genco,
Charalambos Louca,
David A. Ruiz-Tijerina,
Daniel J. Gillard,
Luca Sortino,
Aleksey Kozikov,
Evgeny M. Alexeev,
Riccardo Pisoni,
Lee Hague,
Kenji Watanabe,
Takashi Taniguchi,
Klauss Ensslin,
Kostya S. Novoselov,
Vladimir Fal'ko,
Alexander I. Tartakovskii
Abstract:
Bandstructure engineering using alloying is widely utilised for achieving optimised performance in modern semiconductor devices. While alloying has been studied in monolayer transition metal dichalcogenides, its application in van der Waals heterostructures built from atomically thin layers is largely unexplored. Here, we fabricate heterobilayers made from monolayers of WSe$_2$ (or MoSe$_2$) and M…
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Bandstructure engineering using alloying is widely utilised for achieving optimised performance in modern semiconductor devices. While alloying has been studied in monolayer transition metal dichalcogenides, its application in van der Waals heterostructures built from atomically thin layers is largely unexplored. Here, we fabricate heterobilayers made from monolayers of WSe$_2$ (or MoSe$_2$) and Mo$_x$W$_{1-x}$Se$_2$ alloy and observe nontrivial tuning of the resultant bandstructure as a function of concentration $x$. We monitor this evolution by measuring the energy of photoluminescence (PL) of the interlayer exciton (IX) composed of an electron and hole residing in different monolayers. In Mo$_x$W$_{1-x}$Se$_2$/WSe$_2$, we observe a strong IX energy shift of $\approx$100 meV for $x$ varied from 1 to 0.6. However, for $x<0.6$ this shift saturates and the IX PL energy asymptotically approaches that of the indirect bandgap in bilayer WSe$_2$. We theoretically interpret this observation as the strong variation of the conduction band K valley for $x>0.6$, with IX PL arising from the K-K transition, while for $x<0.6$, the bandstructure hybridization becomes prevalent leading to the dominating momentum-indirect K-Q transition. This bandstructure hybridization is accompanied with strong modification of IX PL dynamics and nonlinear exciton properties. Our work provides foundation for bandstructure engineering in van der Waals heterostructures highlighting the importance of hybridization effects and opening a way to devices with accurately tailored electronic properties.
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Submitted 23 September, 2023;
originally announced September 2023.
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Quantum coherence and interference of a single moiré exciton in nano-fabricated twisted semiconductor heterobilayers
Authors:
Haonan Wang,
Heejun Kim,
Duanfei Dong,
Keisuke Shinokita,
Kenji Watanabe,
Takashi Taniguchi,
Kazunari Matsuda
Abstract:
Moiré potential acts as periodic quantum confinement for optically generated exciton, generating spatially ordered zero-dimensional quantum system. However, broad emission spectrum arising from inhomogeneity among moiré potential hinders the exploration of the intrinsic properties of moiré exciton. In this study, we have demonstrated a new method to realize the optical observation of quantum coher…
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Moiré potential acts as periodic quantum confinement for optically generated exciton, generating spatially ordered zero-dimensional quantum system. However, broad emission spectrum arising from inhomogeneity among moiré potential hinders the exploration of the intrinsic properties of moiré exciton. In this study, we have demonstrated a new method to realize the optical observation of quantum coherence and interference of a single moiré exciton in twisted semiconducting heterobilayer beyond the diffraction limit of light. A significant single and sharp photoluminescence peak from a single moiré exciton has been demonstrated after nano-fabrication. We present the longer duration of quantum coherence of a single moiré exciton, which reaches beyond 10 ps and the accelerated decoherence process with elevating temperature and excitation power density. Moreover, the quantum interference has revealed the coupling between moiré excitons in different moiré potential minima. The observed quantum coherence and interference of moiré exciton will facilitate potential application toward quantum technologies based on moiré quantum systems.
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Submitted 6 September, 2023;
originally announced September 2023.
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Non-volatile optical phase shift in ferroelectric hafnium zirconium oxide
Authors:
Kazuma Taki,
Naoki Sekine,
Kouhei Watanabe,
Yuto Miyatake,
Tomohiro Akazawa,
Hiroya Sakumoto,
Kasidit Toprasertpong,
Shinichi Takagi,
Mitsuru Takenaka
Abstract:
A non-volatile optical phase shifter is a critical component for enabling large-scale, energy-efficient programmable photonic integrated circuits (PICs) on a silicon (Si) photonics platform. While ferroelectric materials like BaTiO3 offer non-volatile optical phase shift capabilities, their compatibility with complementary metal-oxide-semiconductor (CMOS) fabs is limited. Hence, the search for a n…
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A non-volatile optical phase shifter is a critical component for enabling large-scale, energy-efficient programmable photonic integrated circuits (PICs) on a silicon (Si) photonics platform. While ferroelectric materials like BaTiO3 offer non-volatile optical phase shift capabilities, their compatibility with complementary metal-oxide-semiconductor (CMOS) fabs is limited. Hence, the search for a novel CMOS-compatible ferroelectric material for non-volatile optical phase shifting in Si photonics is of utmost importance. Hafnium zirconium oxide (HZO) is an emerging ferroelectric material discovered in 2011, which exhibits CMOS compatibility due to the utilization of high-k dielectric HfO2 in CMOS transistors. Although extensively studied for ferroelectric transistors and memories, its application in photonics remains relatively unexplored. Here, we show the optical phase shift induced by ferroelectric HZO deposited on a SiN optical waveguide. We observed a negative change in refractive index at a 1.55 um wavelength in the pristine device regardless of the direction of an applied electric filed. We achieved approximately pi phase shift in a 4.5-mm-long device with negligible optical loss. The non-volatile multi-level optical phase shift was confirmed with a persistence of > 10000 s. This phase shift can be attributed to the spontaneous polarization within the HZO film along the external electric field. We anticipate that our results will stimulate further research on optical nonlinear effects, such as the Pockels effect, in ferroelectric HZO. This advancement will enable the development of various devices, including high-speed optical modulators. Consequently, HZO-based programmable PICs are poised to become indispensable in diverse applications, ranging from optical fiber communication and artificial intelligence to quantum computing and sensing.
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Submitted 5 September, 2023;
originally announced September 2023.
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An inverse-designed nanophotonic interface for excitons in atomically thin materials
Authors:
Ryan J. Gelly,
Alexander D. White,
Giovanni Scuri,
Xing Liao,
Geun Ho Ahn,
Bingchen Deng,
Kenji Watanabe,
Takashi Taniguchi,
Jelena Vučković,
Hongkun Park
Abstract:
Efficient nanophotonic devices are essential for applications in quantum networking, optical information processing, sensing, and nonlinear optics. Extensive research efforts have focused on integrating two-dimensional (2D) materials into photonic structures, but this integration is often limited by size and material quality. Here, we use hexagonal boron nitride (hBN), a benchmark choice for encap…
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Efficient nanophotonic devices are essential for applications in quantum networking, optical information processing, sensing, and nonlinear optics. Extensive research efforts have focused on integrating two-dimensional (2D) materials into photonic structures, but this integration is often limited by size and material quality. Here, we use hexagonal boron nitride (hBN), a benchmark choice for encapsulating atomically thin materials, as a waveguiding layer while simultaneously improving the optical quality of the embedded films. When combined with photonic inverse design, it becomes a complete nanophotonic platform to interface with optically active 2D materials. Grating couplers and low-loss waveguides provide optical interfacing and routing, tunable cavities provide a large exciton-photon coupling to transition metal dichalcogenides (TMD) monolayers through Purcell enhancement, and metasurfaces enable the efficient detection of TMD dark excitons. This work paves the way for advanced 2D-material nanophotonic structures for classical and quantum nonlinear optics.
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Submitted 25 August, 2023;
originally announced August 2023.
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Ultra-clean assembly of van der Waals heterostructures
Authors:
Wendong Wang,
Nicholas Clark,
Matthew Hamer,
Amy Carl,
Endre Tovari,
Sam Sullivan-Allsop,
Evan Tillotson,
Yunze Gao,
Hugo de Latour,
Francisco Selles,
James Howarth,
Eli G. Castanon,
Mingwei Zhou,
Haoyu Bai,
Xiao Li,
Astrid Weston,
Kenji Watanabe,
Takashi Taniguchi,
Cecilia Mattevi,
Thomas H. Bointon,
Paul V. Wiper,
Andrew J. Strudwick,
Leonid A. Ponomarenko,
Andrey Kretinin,
Sarah J. Haigh
, et al. (2 additional authors not shown)
Abstract:
Layer-by-layer assembly of van der Waals (vdW) heterostructures underpins new discoveries in solid state physics, material science and chemistry. Despite the successes, all current 2D material (2DM) transfer techniques rely on the use of polymers which limit the cleanliness, ultimate electronic performance, and potential for optoelectronic applications of the heterostructures. In this article, we…
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Layer-by-layer assembly of van der Waals (vdW) heterostructures underpins new discoveries in solid state physics, material science and chemistry. Despite the successes, all current 2D material (2DM) transfer techniques rely on the use of polymers which limit the cleanliness, ultimate electronic performance, and potential for optoelectronic applications of the heterostructures. In this article, we present a novel polymer-free platform for rapid and facile heterostructure assembly which utilises re-usable flexible silicon nitride membranes. We demonstrate that this allows fast and reproducible production of 2D heterostructures using both exfoliated and CVD-grown materials with perfect interfaces free from interlayer contamination and correspondingly excellent electronic behaviour, limited only by the size and intrinsic quality of the crystals used. Furthermore, removing the need for polymeric carriers allows new possibilities for vdW heterostructure fabrication: assembly at high temperatures up to 600°C, and in different environments including ultra-high vacuum (UHV) and when the materials are fully submerged in liquids. We demonstrate UHV heterostructure assembly for the first time, and show the reliable creation of graphene moiré superlattices with more than an order of magnitude improvement in their structural homogeneity. We believe that broad adaptation of our novel inorganic 2D materials assembly strategy will allow realisation of the full potential of vdW heterostructures as a platform for new physics and advanced optoelectronic technologies.
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Submitted 25 August, 2023;
originally announced August 2023.
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Self-aligned hybrid nanocavities using atomically thin materials
Authors:
C. F. Fong,
D. Yamashita,
N. Fang,
S. Fujii,
Y. -R. Chang,
T. Taniguchi,
K. Watanabe,
Y. K. Kato
Abstract:
Two-dimensional (2D) van der Waals layered materials with intriguing properties are increasingly being adopted in hybrid photonics. The 2D materials are often integrated with photonic structures including cavities to enhance light-matter coupling, providing additional control and functionality. The 2D materials, however, needs to be precisely placed on the photonic cavities. Furthermore, the trans…
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Two-dimensional (2D) van der Waals layered materials with intriguing properties are increasingly being adopted in hybrid photonics. The 2D materials are often integrated with photonic structures including cavities to enhance light-matter coupling, providing additional control and functionality. The 2D materials, however, needs to be precisely placed on the photonic cavities. Furthermore, the transfer of 2D materials onto the cavities could degrade the cavity quality $(Q)$ factor. Instead of using prefabricated PhC nanocavities, we demonstrate a novel approach to form a hybrid nanocavity by partially covering a PhC waveguide post-fabrication with a suitably-sized 2D material flake. We successfully fabricated such hybrid nanocavity devices with hBN, WSe$_2$ and MoTe$_2$ flakes on silicon PhC waveguides, obtaining $Q$ factors as high as $4.0\times10^5$. Remarkably, even mono- and few-layer flakes can provide sufficient local refractive index modulation to induce nanocavity formation. Since the 2D material is spatially self-aligned to the nanocavity, we have also managed to observe cavity PL enhancement in a MoTe$_2$ hybrid cavity device, with a cavity Purcell enhancement factor of about 15. Our results highlights the prospect of using such 2D materials-induced PhC nanocavity to realize a wide range of photonic components for hybrid devices and integrated photonic circuits.
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Submitted 21 August, 2023;
originally announced August 2023.
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Surface recombination and out of plane diffusivity of free excitons in hexagonal boron nitride
Authors:
Sébastien Roux,
Christophe Arnold,
Etienne Carré,
Eli Janzen,
James H. Edgard,
Camille Maestre,
Bérangère Toury,
Catherine Journet,
Vincent Garnier,
Philippe Steyer,
Takashi Taniguchi,
Kenji Watanabe,
Annick Loiseau,
Julien Barjon
Abstract:
We present a novel experimental protocol using Cathodoluminescence measurements as a function of the electron incident energy to study both exciton diffusion in a directional way and surface exciton recombination. Our approach overcomes the challenges of anisotropic diffusion and the limited applicability of existing methods to the bulk counterparts of 2D materials. The protocol is then applied at…
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We present a novel experimental protocol using Cathodoluminescence measurements as a function of the electron incident energy to study both exciton diffusion in a directional way and surface exciton recombination. Our approach overcomes the challenges of anisotropic diffusion and the limited applicability of existing methods to the bulk counterparts of 2D materials. The protocol is then applied at room and at cryogenic temperatures to four bulk hexagonal boron nitride crystals grown by different synthesis routes. The exciton diffusivity depends on the sample quality but not on the temperature, indicating it is limited by defect scattering even in the best quality crystals. The lower limit for the diffusivity by phonon scattering is 0.2 cm$^{2}$.s$^{-1}$. Diffusion lengths were as much as 570 nm. Finally, the surface recombination velocity exceeds 10$^{5}$ cm$^{2}$.s$^{-1}$, at a level similar to silicon or diamond. This result reveals that surface recombination could strongly limit light-emitting devices based on 2D materials.
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Submitted 11 August, 2023; v1 submitted 10 August, 2023;
originally announced August 2023.
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Vibrational coupling to quasi-bound states in the continuum under tailored coupling conditions
Authors:
Keisuke Watanabe,
Hemam Rachna Devi,
Masanobu Iwanaga,
Tadaaki Nagao
Abstract:
Photonic resonance modes can be spectrally coupled to the vibrational modes of molecules in the mid-infrared regime through interactions between localized electric fields and nearby molecules. According to recent studies, radiative loss engineering of coupled systems is a promising approach for tailoring coupling conditions and enhancing the molecular signals. However, this strategy has only been…
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Photonic resonance modes can be spectrally coupled to the vibrational modes of molecules in the mid-infrared regime through interactions between localized electric fields and nearby molecules. According to recent studies, radiative loss engineering of coupled systems is a promising approach for tailoring coupling conditions and enhancing the molecular signals. However, this strategy has only been realized using the localized surface plasmon resonances of metal nanostructures, which suffer from increased ohmic loss in the mid-infrared region and face serious limitations in achieving high quality (Q) factors. In this study, we adopt silicon-based metasurfaces formed on silicon-on-insulator wafers to achieve high Q factors and tune the coupling conditions between the quasi-bound states in the continuum (qBICs) and molecular vibrations. The coupling between the resonance mode and polymethyl methacrylate molecules is tailored from weak to strong coupling regimes by simply changing the structural asymmetry parameter and utilizing the intrinsically high Q factors of the qBIC modes. In addition, we identify the optimal asymmetry parameter that maximizes the enhanced molecular signal, opening a route toward realizing highly sensitive surface-enhanced infrared spectroscopy using complementary metal-oxide semiconductor compatible all-dielectric materials.
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Submitted 8 August, 2023;
originally announced August 2023.
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Chiral Optical Nano-Cavity with Atomically Thin Mirrors
Authors:
Daniel G. Suárez-Forero,
Ruihao Ni,
Supratik Sarkar,
Mahmoud Jalali Mehrabad,
Erik Mechtel,
Valery Simonyan,
Andrey Grankin,
Kenji Watanabe,
Takashi Taniguchi,
Suji Park,
Houk Jang,
Mohammad Hafezi,
You Zhou
Abstract:
A fundamental requirement for photonic technologies is the ability to control the confinement and propagation of light. Widely utilized platforms include two-dimensional (2D) optical microcavities in which electromagnetic waves are confined between either metallic or multi-layer dielectric distributed Bragg reflectors. However, the fabrication complexities of thick Bragg reflectors and high losses…
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A fundamental requirement for photonic technologies is the ability to control the confinement and propagation of light. Widely utilized platforms include two-dimensional (2D) optical microcavities in which electromagnetic waves are confined between either metallic or multi-layer dielectric distributed Bragg reflectors. However, the fabrication complexities of thick Bragg reflectors and high losses in metallic mirrors have motivated the quest for efficient and compact mirrors. Recently, 2D transition metal dichalcogenides hosting tightly bound excitons with high optical quality have emerged as promising atomically thin mirrors. In this work, we propose and experimentally demonstrate a sub-wavelength 2D nano-cavity using two atomically thin mirrors with degenerate resonances. Remarkably, we show how the excitonic nature of the mirrors enables the formation of chiral and tunable optical modes upon the application of an external magnetic field. Moreover, temperature-dependent reflectance measurements indicate robustness and tunability up to $\approx\!100$ K for the device. Our work establishes a new regime for engineering intrinsically chiral sub-wavelength optical cavities and opens avenues for realizing spin-photon interfaces and exploring chiral many-body cavity electrodynamics.
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Submitted 8 August, 2023;
originally announced August 2023.
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Harmonic to anharmonic tuning of moiré potential leading to unconventional Stark effect and giant dipolar repulsion in WS$_2$/WSe$_2$ heterobilayer
Authors:
Suman Chatterjee,
Medha Dandu,
Pushkar Dasika,
Rabindra Biswas,
Sarthak Das,
Kenji Watanabe,
Takashi Taniguchi,
Varun Raghunathan,
Kausik Majumdar
Abstract:
Excitonic states trapped in harmonic moiré wells of twisted heterobilayers is an intriguing testbed. However, the moiré potential is primarily governed by the twist angle, and its dynamic tuning remains a challenge. Here we demonstrate anharmonic tuning of moiré potential in a WS$_2$/WSe$_2$ heterobilayer through gate voltage and optical power. A gate voltage can result in a local in-plane perturb…
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Excitonic states trapped in harmonic moiré wells of twisted heterobilayers is an intriguing testbed. However, the moiré potential is primarily governed by the twist angle, and its dynamic tuning remains a challenge. Here we demonstrate anharmonic tuning of moiré potential in a WS$_2$/WSe$_2$ heterobilayer through gate voltage and optical power. A gate voltage can result in a local in-plane perturbing field with odd parity around the high-symmetry points. This allows us to simultaneously observe the first (linear) and second (parabolic) order Stark shift for the ground state and first excited state, respectively, of the moiré trapped exciton - an effect opposite to conventional quantum-confined Stark shift. Depending on the degree of confinement, these excitons exhibit up to twenty-fold gate-tunability in the lifetime ($100$ to $5$ ns). Also, exciton localization dependent dipolar repulsion leads to an optical power-induced blueshift of $\sim$1 meV/$μ$W - a five-fold enhancement over previous reports.
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Submitted 24 July, 2023;
originally announced July 2023.
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Engineering the impact of phonon dephasing on the coherence of a WSe$_{2}$ single-photon source via cavity quantum electrodynamics
Authors:
Victor Nikolaevich Mitryakhin,
Alexander Steinhoff,
Jens-Christian Drawer,
Hangyong Shan,
Matthias Florian,
Lukas Lackner,
Bo Han,
Falk Eilenberger,
Sefaattin Tongay,
Kenji Watanabe,
Takashi Taniguchi,
Carlos Antón-Solanas,
Ana Predojević,
Christopher Gies,
Martin Esmann,
Christian Schneider
Abstract:
Emitter dephasing is one of the key issues in the performance of solid-state single photon sources. Among the various sources of dephasing, acoustic phonons play a central role in adding decoherence to the single photon emission. Here, we demonstrate, that it is possible to tune and engineer the coherence of photons emitted from a single WSe$_2$ monolayer quantum dot via selectively coupling it to…
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Emitter dephasing is one of the key issues in the performance of solid-state single photon sources. Among the various sources of dephasing, acoustic phonons play a central role in adding decoherence to the single photon emission. Here, we demonstrate, that it is possible to tune and engineer the coherence of photons emitted from a single WSe$_2$ monolayer quantum dot via selectively coupling it to a spectral cavity resonance. We utilize an open cavity to demonstrate spectral enhancement, leveling, and suppression of the highly asymmetric phonon sideband, finding excellent agreement with a microscopic description of the exciton-phonon dephasing in a truly two-dimensional system. Moreover, the impact of cavity tuning on the dephasing is directly assessed via optical interferometry, which points out the capability to utilize light-matter coupling to steer and design dephasing and coherence of quantum emitters in atomically thin crystals.
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Submitted 4 April, 2024; v1 submitted 13 July, 2023;
originally announced July 2023.
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Intrinsic Electronic Properties of BN Encapsulated, van der Waals Contacted MoSe$_2$ FETs
Authors:
Yinjiang Shao,
Jian Zhou,
Ning Xu,
Jian Chen,
Kenji Watanabe,
Takashi Taniguchi,
Yi Shi,
Songlin Li
Abstract:
Two-dimensional (2D) semiconductors have attracted considerable interest for their unique physical properties. Here, we report the intrinsic cryogenic electronic transport properties in few-layer MoSe$_2$ field-effect transistors (FETs) that are simultaneously van der Waals contacted with gold electrodes and are fully encapsulated in ultraclean hexagonal boron nitride dielectrics. The FETs exhibit…
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Two-dimensional (2D) semiconductors have attracted considerable interest for their unique physical properties. Here, we report the intrinsic cryogenic electronic transport properties in few-layer MoSe$_2$ field-effect transistors (FETs) that are simultaneously van der Waals contacted with gold electrodes and are fully encapsulated in ultraclean hexagonal boron nitride dielectrics. The FETs exhibit electronically favorable channel/dielectric interfaces with low densities of interfacial traps ($10^{10}\,$cm$^{-2}$), which lead to outstanding device characteristics at room temperature, including a near-Boltzmann-limit subthreshold swings ($\lt65\,$mV/dec), a high carrier mobility ($68\,$cm$^{2}\cdot$V$^{-1}\cdot$s$^{-1}$), and a negligible scanning hysteresis ($\lt15\,$mV). The dependence of various contact-related quantities on temperature and carrier density are also systematically characterized to understand the van der Waals contacts between gold and MoSe$_2$. The results provide insightful information on the device physics in van der Waals contacted and encapsulated 2D FETs.
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Submitted 25 June, 2023;
originally announced June 2023.
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Kapitza-resistance-like exciton dynamics in atomically flat MoSe$_{2}$-WSe$_{2}$ lateral heterojunction
Authors:
Hassan Lamsaadi,
Dorian Beret,
Ioannis Paradisanos,
Pierre Renucci,
Delphine Lagarde,
Xavier Marie,
Bernhard Urbaszek,
Ziyang Gan,
Antony George,
Kenji Watanabe,
Takashi Taniguchi,
Andrey Turchanin,
Laurent Lombez,
Nicolas Combe,
Vincent Paillard,
Jean-Marie Poumirol
Abstract:
Being able to control the neutral excitonic flux is a mandatory step for the development of future room-temperature two-dimensional excitonic devices. Semiconducting Monolayer Transition Metal Dichalcogenides (TMD-ML) with extremely robust and mobile excitons are highly attractive in this regard. However, generating an efficient and controlled exciton transport over long distances is a very challe…
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Being able to control the neutral excitonic flux is a mandatory step for the development of future room-temperature two-dimensional excitonic devices. Semiconducting Monolayer Transition Metal Dichalcogenides (TMD-ML) with extremely robust and mobile excitons are highly attractive in this regard. However, generating an efficient and controlled exciton transport over long distances is a very challenging task. Here we demonstrate that an atomically sharp TMD-ML lateral heterostructure (MoSe$_{2}$-WSe$_{2}$) transforms the isotropic exciton diffusion into a unidirectional excitonic flow through the junction. Using tip-enhanced photoluminescence spectroscopy (TEPL) and a modified exciton transfer model, we show a discontinuity of the exciton density distribution on each side of the interface. We introduce the concept of exciton Kapitza resistance, by analogy with the interfacial thermal resistance referred to as Kapitza resistance. By comparing different heterostructures with or without top hexagonal boron nitride (hBN) layer, we deduce that the transport properties can be controlled, over distances far greater than the junction width, by the exciton density through near-field engineering and/or laser power density. This work provides a new approach for controlling the neutral exciton flow, which is key toward the conception of excitonic devices.
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Submitted 23 June, 2023;
originally announced June 2023.
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Organic molecules as origin of visible-range single photon emission from hexagonal boron nitride and mica
Authors:
Michael Neumann,
Xu Wei,
Luis Morales-Inostroza,
Seunghyun Song,
Sung-Gyu Lee,
Kenji Watanabe,
Takashi Taniguchi,
Stephan Götzinger,
Young Hee Lee
Abstract:
The discovery of room-temperature single-photon emitters (SPEs) hosted by two-dimensional hexagonal boron nitride (2D hBN) has sparked intense research interest. Although emitters in the vicinity of 2 eV have been studied extensively, their microscopic identity has remained elusive. The discussion of this class of SPEs has centered on point defects in the hBN crystal lattice, but none of the candi…
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The discovery of room-temperature single-photon emitters (SPEs) hosted by two-dimensional hexagonal boron nitride (2D hBN) has sparked intense research interest. Although emitters in the vicinity of 2 eV have been studied extensively, their microscopic identity has remained elusive. The discussion of this class of SPEs has centered on point defects in the hBN crystal lattice, but none of the candidate defect structures have been able to capture the great heterogeneity in emitter properties that is observed experimentally. Employing a widely used sample preparation protocol but disentangling several confounding factors, we demonstrate conclusively that heterogeneous single-photon emission ~2 eV associated with hBN originates from organic molecules, presumably aromatic fluorophores. The appearance of those SPEs depends critically on the presence of organic processing residues during sample preparation, and emitters formed during heat treatment are not located within the hBN crystal as previously thought, but at the hBN/substrate interface. We further demonstrate that the same class of SPEs can be observed in a different 2D insulator, fluorophlogopite mica.
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Submitted 21 June, 2023;
originally announced June 2023.
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Giant optical nonlinearity of Fermi polarons in atomically thin semiconductors
Authors:
Liuxin Gu,
Lifu Zhang,
Ruihao Ni,
Ming Xie,
Dominik S. Wild,
Suji Park,
Houk Jang,
Takashi Taniguchi,
Kenji Watanabe,
Mohammad Hafezi,
You Zhou
Abstract:
Realizing strong nonlinear optical responses is a long-standing goal of both fundamental and technological importance. Recently significant efforts have focused on exploring excitons in solids as a pathway to achieving nonlinearities even down to few-photon levels. However, a crucial tradeoff arises as strong light-matter interactions require large oscillator strength and short radiative lifetime…
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Realizing strong nonlinear optical responses is a long-standing goal of both fundamental and technological importance. Recently significant efforts have focused on exploring excitons in solids as a pathway to achieving nonlinearities even down to few-photon levels. However, a crucial tradeoff arises as strong light-matter interactions require large oscillator strength and short radiative lifetime of the excitons, which limits their interaction strength and nonlinearity. Here we experimentally demonstrate strong nonlinear optical responses by exploiting the coupling between excitons and carriers in an atomically thin semiconductor of trilayer tungsten diselenide. By controlling the electric field and electrostatic doping of the trilayer, we observe the hybridization between intralayer and interlayer excitons along with the formation of Fermi polarons due to the interactions between excitons and free carriers. We find substantial optical nonlinearity can be achieved under both continuous wave and pulsed laser excitation, where the resonance of the hole-doped Fermi polaron blueshifts by as much as ~10 meV. Intriguingly, we observe a remarkable asymmetry in the optical nonlinearity between electron and hole doping, which is tunable by the applied electric field. We attribute these features to the strong interactions between excitons and free charges with optically induced valley polarization. Our results establish that atomically thin heterostructures are a highly versatile platform for engineering nonlinear optical response with applications to classical and quantum optoelectronics, and open avenues for exploring many-body physics in hybrid Fermionic-Bosonic systems.
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Submitted 19 June, 2023;
originally announced June 2023.
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Retrieving optical parameters of emerging van der Waals flakes
Authors:
Mitradeep Sarkar,
Michael T. Enders,
Mehrdad Shokooh-Saremi,
Kenji Watanabe,
Takashi Taniguchi,
Hanan Herzig Sheinfux,
Frank H. L. Koppens,
Georgia Theano Papadakis
Abstract:
High-quality low-dimensional layered and van der Waals materials are typically exfoliated, with sample cross sectional areas on the order of tens to hundreds of microns. The small size of flakes makes the experimental characterization of their dielectric properties unsuitable with conventional spectroscopic ellipsometry, due to beam-sample size mismatch and non-uniformities of the crystal axes. Pr…
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High-quality low-dimensional layered and van der Waals materials are typically exfoliated, with sample cross sectional areas on the order of tens to hundreds of microns. The small size of flakes makes the experimental characterization of their dielectric properties unsuitable with conventional spectroscopic ellipsometry, due to beam-sample size mismatch and non-uniformities of the crystal axes. Previously, the experimental measurement of the dielectrirc permittivity of such microcrystals was carried out with near-field tip-based scanning probes. These measurements are sensitive to external conditions like vibrations and temperature, and require non-deterministic numerical fitting to some a priori known model. We present an alternative method to extract the in-plane dielectric permittivity of van der Waals microcrystals, based on identifying reflectance minima in spectroscopic measurements. Our method does not require complex fitting algorithms nor near field tip-based measurements and accommodates for small-area samples. We demonstrate the robustness of our method using hexagonal boron nitride and α-MoO3, and recover their dielectric permittivities that are close to literature values.
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Submitted 29 May, 2023; v1 submitted 23 May, 2023;
originally announced May 2023.
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Exploring methods for creation of Boron-vacancies in hexagonal Boron Nitride exfoliated from bulk crystal
Authors:
T. Zabelotsky,
S. Singh,
G. Haim,
R. Malkinson,
S. Kadkhodazadeh,
I. P. Radko,
I. Aharonovich,
H. Steinberg,
Kirstine Berg-Sørensen,
A. Huck,
T. Taniguchi,
K. Watanabe,
N. Bar-Gill
Abstract:
Boron vacancies (VB${^-}$) in hexagonal boron-nitride (hBN) have sparked great interest in recent years, due to their electronic spin properties. Since hBN can be readily integrated into devices where it interfaces a huge variety of other 2D materials, boron vacancies may serve as a precise sensor which can be deployed at very close proximity to many important materials systems. Boron vacancy defe…
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Boron vacancies (VB${^-}$) in hexagonal boron-nitride (hBN) have sparked great interest in recent years, due to their electronic spin properties. Since hBN can be readily integrated into devices where it interfaces a huge variety of other 2D materials, boron vacancies may serve as a precise sensor which can be deployed at very close proximity to many important materials systems. Boron vacancy defects may be produced by a number of existing methods, the use of which may depend on the final application. Any method should reproducibly generate defects with controlled density and desired pattern. To date, however, detailed studies of such methods are missing. In this paper we study various techniques, focused ion beam (FIB), electron irradiation and ion implantation, for the preparation of hBN flakes from bulk crystals, and relevant post-processing treatments to create VB${^-}$s as a function of flake thickness and defect concentrations. We find that flake thickness plays an important role when optimising implantation parameters, while careful sample cleaning proved important to achieve best results.
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Submitted 9 May, 2023;
originally announced May 2023.
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Analysis of the ECH effect on the EPM/AEs stability in Heliotron J plasma using a Landau closure model
Authors:
J. Varela,
K. Nagasaki,
S. Kobayashi,
K. Nagaoka,
P. Adulsiriswad,
A. Cappa,
S. Yamamoto,
K. Y. Watanabe,
D. A. Spong,
L. Garcia,
Y. Ghai,
J. Ortiz
Abstract:
The aim of the present study is to analyze the effect of the electron cyclotron heating (ECH) on the linear stability of Alfven Eigenmodes (AE) and energetic particle modes (EPM) triggered by energetic ions in Heliotron J plasma. The analysis is performed using the FAR3d code that solves a reduced MHD model to describe the thermal plasma coupled with a gyrofluid model for the energetic particles (…
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The aim of the present study is to analyze the effect of the electron cyclotron heating (ECH) on the linear stability of Alfven Eigenmodes (AE) and energetic particle modes (EPM) triggered by energetic ions in Heliotron J plasma. The analysis is performed using the FAR3d code that solves a reduced MHD model to describe the thermal plasma coupled with a gyrofluid model for the energetic particles (EP) species. The simulations reproduce the AE/EPM stability trends observed in the experiments as the electron temperature (Te) increases, modifying the thermal plasma beta, EP beta and EP slowing down time. Particularly, the n/m=1/2 EPM and 2/4 Global AE (GAE) are stabilized in the low bumpiness (LB) configuration due to an enhancement of the continuum, Finite Larmor radius (FLR) and e-i Landau damping effects as the thermal beta increases. On the other hand, a larger ECH injection power cannot stabilize the AE/EPM in Medium (MB) and High bumpiness (HB) configurations because the damping effects are weaker compared to the LB case, unable to balance the further destabilization induced by an enhanced EP resonance as the EP slowing down time and EP beta increases with Te
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Submitted 18 April, 2023;
originally announced April 2023.
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Lessons learned after three years of SPIDER operation and the first MITICA integrated tests
Authors:
D. Marcuzzi,
V. Toigo,
M. Boldrin,
G. Chitarin,
S. Dal Bello,
L. Grando,
A. Luchetta,
R. Pasqualotto,
M. Pavei,
G. Serianni,
L. Zanotto,
R. Agnello,
P. Agostinetti,
M. Agostini,
D. Aprile,
M. Barbisan,
M. Battistella,
G. Berton,
M. Bigi,
M. Brombin,
V. Candela,
V. Candeloro,
A. Canton,
R. Casagrande,
C. Cavallini
, et al. (117 additional authors not shown)
Abstract:
ITER envisages the use of two heating neutral beam injectors plus an optional one as part of the auxiliary heating and current drive system. The 16.5 MW expected neutral beam power per injector is several notches higher than worldwide existing facilities. A Neutral Beam Test Facility (NBTF) was established at Consorzio RFX, exploiting the synergy of two test beds, SPIDER and MITICA. SPIDER is dedi…
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ITER envisages the use of two heating neutral beam injectors plus an optional one as part of the auxiliary heating and current drive system. The 16.5 MW expected neutral beam power per injector is several notches higher than worldwide existing facilities. A Neutral Beam Test Facility (NBTF) was established at Consorzio RFX, exploiting the synergy of two test beds, SPIDER and MITICA. SPIDER is dedicated to developing and characterizing large efficient negative ion sources at relevant parameters in ITER-like conditions: source and accelerator located in the same vacuum where the beam propagates, immunity to electromagnetic interferences of multiple radio-frequency (RF) antennas, avoidance of RF-induced discharges on the outside of the source. Three years of experiments on SPIDER have addressed to the necessary design modifications to enable full performances. The source is presently under a long shut-down phase to incorporate learnings from the experimental campaign. Parallelly, developments on MITICA, the full-scale prototype of the ITER NBI featuring a 1 MV accelerator and ion neutralization, are underway including manufacturing of in-vessel components, while power supplies and auxiliary plants are already under final testing and commissioning. Integration, commissioning and tests of the 1MV power supplies are essential for this first-of-kind system, unparalleled both in research and industry field. The integrated test to confirm 1MV output by combining invertor systems, DC generators and transmission lines extracted errors/accidents in some components. To realize a concrete system for ITER, solutions for the repair and the improvement of the system were developed. Hence, NBTF is emerging as a necessary facility, due to the large gap with existing injectors, effectively dedicated to identify issues and find solutions to enable successful ITER NBI operations in a time bound fashion.
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Submitted 4 April, 2023;
originally announced April 2023.
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Top-down integration of a hBN quantum emitter in a monolithic photonic waveguide
Authors:
Domitille Gérard,
Michael Rosticher,
Kenji Watanabe,
Takashi Taniguchi,
Julien Barjon,
Stéphanie Buil,
Jean-Pierre Hermier,
Aymeric Delteil
Abstract:
Integrated quantum photonics, with potential applications in quantum information processing, relies on the integration of quantum emitters into on-chip photonic circuits. Hexagonal boron nitride (hBN) is recognized as a material that is compatible with such implementations, owing to its relatively high refractive index and low losses in the visible range, together with advantageous fabrication tec…
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Integrated quantum photonics, with potential applications in quantum information processing, relies on the integration of quantum emitters into on-chip photonic circuits. Hexagonal boron nitride (hBN) is recognized as a material that is compatible with such implementations, owing to its relatively high refractive index and low losses in the visible range, together with advantageous fabrication techniques. Here, we combine hBN waveguide nanofabrication with the recently demonstrated local generation of quantum emitters using electron irradiation to realize a fully top-down elementary quantum photonic circuit in this material, operating at room temperature. This proof of principle constitutes a first step towards deterministic quantum photonic circuits in hBN.
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Submitted 3 July, 2023; v1 submitted 31 March, 2023;
originally announced April 2023.